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TWI692033B - 非晶質薄膜之形成方法 - Google Patents

非晶質薄膜之形成方法 Download PDF

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TWI692033B
TWI692033B TW107102920A TW107102920A TWI692033B TW I692033 B TWI692033 B TW I692033B TW 107102920 A TW107102920 A TW 107102920A TW 107102920 A TW107102920 A TW 107102920A TW I692033 B TWI692033 B TW I692033B
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thin film
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amorphous silicon
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申承祐
柳次英
鄭愚德
崔豪珉
吳完錫
李郡禹
權赫龍
金基鎬
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韓商尤金科技有限公司
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Abstract

本發明提供一種非晶質薄膜之形成方法，該方法包含：藉由在一基底上供應胺基矽烷基氣體以在該基底之表面上形成一晶種層；藉由在該晶種層上供應包括硼基氣體之第一來源氣體以形成該第一硼摻雜非晶質薄膜；及藉由在該第一非晶質薄膜上供應包括硼基氣體之第二來源氣體以形成該第二硼摻雜非晶質薄膜。

Description

非晶質薄膜之形成方法
本文揭示之本發明係關於一種非晶質薄膜之形成方法，且更特定而言，係關於一種沉積一膜之方法，其可藉由在形成第一硼摻雜非晶質薄膜之後形成第二硼摻雜非晶質薄膜而使該第二非晶質薄膜之表面粗糙度最小化。
當在低溫(低於300度C)下沉積一非晶質薄膜時，若摻雜硼則表面粗糙度快速地劣化。特定而言，若該非晶質薄膜之目標厚度為200Å時，則其可能難以形成具有等於或小於0.3nm之表面粗糙度(RMS)之非晶質薄膜。因此，需要改善表面粗糙度之技術。
本發明之目標係提供一種用於沉積一膜之方法，其可將一非晶質薄膜之表面粗糙度最小化。
本發明之進一步另一目標在參照以下詳細描述及隨附圖式將變得顯而易見。
本發明之具體實施例提供一種非晶質薄膜之形成方法，該方法包含：藉由在一基底上供應胺基矽烷基氣體以在該基底之表面上形成一晶種層；藉由在該晶種層上供應包括硼基氣體之第一來源氣體以形成該第 一硼摻雜非晶質薄膜；及藉由在該第一非晶質薄膜上供應包括硼基氣體之第二來源氣體以形成該第二硼摻雜非晶質薄膜。
該硼基氣體可係B2H6。
包括在該第一來源氣體之矽烷基氣體可係SiH4。
包括在該第二來源氣體之矽烷基氣體可係Si2H6且該第二非晶質薄膜可係矽薄膜，該形成第一非晶質薄膜可在300度C下進行，且該形成第二非晶質薄膜可在400度C下進行。
包括在該第二來源氣體之矽烷基氣體可係比例為4：1之SiH4及Si2H6之混合氣體，且該第二非晶質薄膜可係矽薄膜。
該第二來源氣體可進一步包括矽烷基氣體及鍺基氣體，且包括在該第二來源氣體之該矽烷基氣體及鍺基氣體可以1：2之比例混合。
包括在該第二來源氣體之矽烷基氣體可係SiH4且該第二非晶質薄膜係矽薄膜，該第一來源氣體可包括N2 15000sccm，且該第二來源氣體可包括N2 5000sccm及H2 3000sccm。
該第二來源氣體可包括鍺基氣體，且該第二非晶質薄膜係鍺薄膜。
根據本發明之一具體實施例，可能藉由在形成該第一薄膜之後形成該第二薄膜以將第二薄膜之表面粗糙度最小化。
所包括之隨附圖式提供對本發明之進一步了解，並併入且構成本說明書之一部份。該等圖式說明本發明之示例性具體實施例，並連同實施方式一起用於解釋本發明之原理。在該等圖式中： 第一圖係說明根據程序條件改變而改善之非晶質薄膜之表面粗糙度之圖；第二圖係說明根據厚度增加之非晶質薄膜之表面粗糙度之圖；第三圖係說明根據本發明之第一至第四具體實施例改善之非晶質薄膜之表面粗糙度之圖。
下文中，本發明之示例性具體實施例將參考第一圖至第三圖更詳細地描述。然而，本發明可以不同形式體現且不應視為限於本文所提及之具體實施例。而是，提供該等具體實施例使得本發明將連貫及完備，並向熟習本技術之人士完全地傳達本發明之範疇。在該等圖式，層及區域之尺寸為清楚說明而放大。
第一圖係說明根據程序條件改變而改善之非晶質薄膜之表面粗糙度之圖。首先，一基底係在一矽基板上形成且該基底可係氧化矽膜或氮化矽膜。藉由在該基板之表面上供應胺基矽烷基氣體(例如：DIPAS)以在該基底上形成一晶種層且接著在該晶種層上形成一非晶質薄膜。
第一圖中說明之非晶質薄膜係在如下表1之程序條件下形成，且在藉由供應該胺基矽烷基氣體達30秒以形成該晶種層之後，該非晶質薄膜形成為200Å。供作參考，D/R意指沉積比例。
同時，二硼烷(B2H6)係硼基氣體之一實例且其可用另一硼基氣體取代，不同於以下程序條件。
Figure 107102920-A0305-02-0006-2
如第一圖中所示，可理解隨著該程序條件自該參考程序(300℃ Ref)改變時，該表面粗糙度改善。考量第一圖，改善之效果如下。
首先該非晶質薄膜之程序條件之程序溫度自300度C增加至400度C，且在此情況下，該表面粗糙度自0.614改善至0.457。
其次，該矽烷基氣體自單矽烷(SiH4)改變至單矽烷(SiH4)與二矽烷(Si2H6)之混合氣體，且該單矽烷與該二矽烷係以4：1之比例混合。在此情況下，該表面粗糙度係自0.651改善至0.484。
第三係供應GeH4，且在此情況下，該表面粗糙度自0.561改善至0.401。
第四係供應氫氣，且在此情況下，該表面粗糙度自0.534改善至0.433。
然而，該非晶質薄膜之表面粗糙度隨其厚度增加而變化如下。若將表2以圖顯示，其係如第二圖。
Figure 107102920-A0305-02-0007-3
即，如表2及第二圖，該非晶質薄膜之表面粗糙度相較於其餘程序在參考程序中係最優異的，但在該參考程序之情況下，該表面粗糙度隨該非晶質薄膜之厚度增加而快速地增加。同時，在其餘程序之情況下，根據該非晶質薄膜之厚度之表面粗糙度的變化係不明顯的。
以此觀點，藉由在使用該參考程序形成該第一非晶質薄膜之後經由各別程序條件形成該第二非晶質薄膜，其可明顯地改善該第二非晶質薄膜之表面粗糙度，如第三圖所示。
另一方面，如表1中第五列所示，該參考程序之矽烷基氣體(單矽烷或二矽烷)可由鍺基氣體取代，且在此情況下，該非晶質薄膜並非一矽薄膜而是一鍺薄膜。當為該鍺薄膜之第二非晶質薄膜係形成於上述第一非晶質薄膜上時，其可經確認該第二非晶質薄膜之表面粗糙度同樣地被改善。
以上揭示標的係視作說明性，且非限制性，以及隨附申請專利範圍意欲包涵所有屬於本發明之真實精神與範疇之此等修正、加強、及其它具體實施例。因此，為達到法律許可之最大範圍，本發明之範疇係藉由以下申請專利範圍及其等效物之最廣容許解釋決定，且不應受到前述實施方法限制或限定。

Claims (7)

  1. 一種非晶質薄膜之形成方法，包含：執行一晶種層步驟，藉由在一基底上供應胺基矽烷基氣體，以在該基底之一表面上形成一晶種層；執行一非氫氣非晶質矽薄膜步驟，藉由在該晶種層上供應一第一來源氣體，以在該晶種層上形成一第一硼摻雜非晶質矽薄膜，該第一來源氣體包括硼基氣體、矽烷基氣體及除了氫氣以外的氣體；及執行一氫氣非晶質矽薄膜步驟，藉由在該第一硼摻雜非晶質矽薄膜上供應一第二來源氣體，以在該第一硼摻雜非晶質矽薄膜上形成一第二硼摻雜非晶質矽薄膜，該第二來源氣體包括硼基氣體及矽烷基氣體，其中該第一來源氣體更包括N2 15000sccm，該第二來源氣體更包括N2 5000sccm及H2 3000sccm。
  2. 如申請專利範圍第1項之形成方法，其中該硼基氣體係B2H6。
  3. 如申請專利範圍第1項之形成方法，其中該第一來源氣體包含的矽烷基氣體為SiH4，該第二來源氣體包含的矽烷基氣體為SiH4。
  4. 如申請專利範圍第1項之形成方法，其中該第一來源氣體為SiH4 150sccm、B2H6 50sccm及N2 15000sccm的混合物，其中該第二來源氣體為SiH4 150sccm、B2H6 50sccm、N2 5000sccm及H2 3000sccm的混合物。
  5. 如申請專利範圍第4項之形成方法，其中該第一硼摻雜非晶質矽薄膜及該第二硼摻雜非晶質矽薄膜係在300℃下形成。
  6. 如申請專利範圍第5項之形成方法，其中該第一硼摻雜非晶質矽薄膜 之厚度約為50Å，該第二硼摻雜非晶質矽薄膜之厚度約為150Å。
  7. 如申請專利範圍第5項之形成方法，其中該第一硼摻雜非晶質矽薄膜之厚度及該第二硼摻雜非晶質矽薄膜之厚度的總和係等於或大於200Å。
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Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070298594A1 (en) * 2006-06-06 2007-12-27 Ichiro Mizushima Semiconductor device fabrication method
US20080224229A1 (en) * 2007-03-14 2008-09-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20110269315A1 (en) * 2010-05-01 2011-11-03 Tokyo Electron Limited Thin film formation method and film formation apparatus
TW201318039A (zh) * 2011-09-30 2013-05-01 東京威力科創股份有限公司 薄膜形成方法及膜形成設備
US20130109197A1 (en) * 2011-10-28 2013-05-02 Tokyo Electron Limited Method of forming silicon oxide film
US20140061867A1 (en) * 2011-04-04 2014-03-06 Okmetic Oyj Method for depositing one or more polycrystalline silicon layers on substrate
US20140179085A1 (en) * 2012-12-25 2014-06-26 Hitachi Kokusai Electric Inc. Method of manufacturing semiconductor device, substrate processing apparatus, and non-transitory computer-readable recording medium
US20150111378A1 (en) * 2013-10-23 2015-04-23 Hitachi Kokusai Electric Inc. Method of manufacturing semiconductor device and substrate processing apparatus

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0654755B2 (ja) * 1985-07-15 1994-07-20 三井東圧化学株式会社 半導体薄膜の形成方法
JP3599290B2 (ja) * 1994-09-19 2004-12-08 株式会社ルネサステクノロジ 半導体装置
KR100224707B1 (ko) * 1995-12-23 1999-10-15 윤종용 반도체 장치 커패시터의 제조방법
JPH09191092A (ja) * 1995-12-23 1997-07-22 Samsung Electron Co Ltd 多結晶シリコン膜の形成方法及びこれを用いた半導体装置のキャパシタの製造方法
US6410090B1 (en) * 1998-09-29 2002-06-25 Applied Materials, Inc. Method and apparatus for forming insitu boron doped polycrystalline and amorphous silicon films
US7005392B2 (en) * 2001-03-30 2006-02-28 Advanced Technology Materials, Inc. Source reagent compositions for CVD formation of gate dielectric thin films using amide precursors and method of using same
US6800510B2 (en) * 2002-11-06 2004-10-05 Hannstar Display Corporation Method of controlling storage capacitor's capacitance of thin film transistor liquid crystal display
US20050101160A1 (en) * 2003-11-12 2005-05-12 Diwakar Garg Silicon thin film transistors and solar cells on plastic substrates
US7109097B2 (en) * 2004-12-14 2006-09-19 Applied Materials, Inc. Process sequence for doped silicon fill of deep trenches
US8153887B2 (en) * 2006-09-11 2012-04-10 Silicon China (HK) Ltd. Method and structure for hydrogenation of silicon substrates with shaped covers
JP5311791B2 (ja) * 2007-10-12 2013-10-09 東京エレクトロン株式会社 ポリシリコン膜の形成方法
US8365075B2 (en) 2009-11-19 2013-01-29 International Business Machines Corporation Recording events in a virtual world
US20120142172A1 (en) * 2010-03-25 2012-06-07 Keith Fox Pecvd deposition of smooth polysilicon films
JP4967066B2 (ja) * 2010-04-27 2012-07-04 東京エレクトロン株式会社 アモルファスシリコン膜の成膜方法および成膜装置
WO2011142443A1 (en) * 2010-05-14 2011-11-17 Semiconductor Energy Laboratory Co., Ltd. Microcrystalline silicon film, manufacturing method thereof, semiconductor device, and manufacturing method thereof
JP2012033750A (ja) * 2010-07-30 2012-02-16 Toshiba Corp 半導体装置及びその製造方法
JP5854112B2 (ja) * 2011-09-30 2016-02-09 東京エレクトロン株式会社 薄膜の形成方法及び成膜装置
JP5792101B2 (ja) * 2012-03-15 2015-10-07 東京エレクトロン株式会社 積層半導体膜の成膜方法
KR20130107628A (ko) 2012-03-22 2013-10-02 삼성디스플레이 주식회사 트렌치 형성 방법, 금속 배선 형성 방법, 및 박막 트랜지스터 표시판의 제조 방법
KR102025441B1 (ko) * 2012-04-06 2019-09-25 노벨러스 시스템즈, 인코포레이티드 증착 후 소프트 어닐링
JP5947710B2 (ja) * 2012-12-27 2016-07-06 東京エレクトロン株式会社 シード層の形成方法、シリコン膜の成膜方法および成膜装置
JP6059085B2 (ja) 2013-05-27 2017-01-11 東京エレクトロン株式会社 トレンチを充填する方法及び処理装置
JP6174943B2 (ja) * 2013-08-22 2017-08-02 東京エレクトロン株式会社 凹部を充填する方法
JP6150724B2 (ja) * 2013-12-27 2017-06-21 東京エレクトロン株式会社 凹部を充填する方法
US9543438B2 (en) * 2014-10-15 2017-01-10 Taiwan Semiconductor Manufacturing Company, Ltd. Contact resistance reduction technique
US9899291B2 (en) * 2015-07-13 2018-02-20 Asm Ip Holding B.V. Method for protecting layer by forming hydrocarbon-based extremely thin film
JP6554438B2 (ja) * 2016-03-30 2019-07-31 東京エレクトロン株式会社 シリコン膜の形成方法および形成装置

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070298594A1 (en) * 2006-06-06 2007-12-27 Ichiro Mizushima Semiconductor device fabrication method
US20080224229A1 (en) * 2007-03-14 2008-09-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20110269315A1 (en) * 2010-05-01 2011-11-03 Tokyo Electron Limited Thin film formation method and film formation apparatus
US20140061867A1 (en) * 2011-04-04 2014-03-06 Okmetic Oyj Method for depositing one or more polycrystalline silicon layers on substrate
TW201318039A (zh) * 2011-09-30 2013-05-01 東京威力科創股份有限公司 薄膜形成方法及膜形成設備
US20130109197A1 (en) * 2011-10-28 2013-05-02 Tokyo Electron Limited Method of forming silicon oxide film
US20140179085A1 (en) * 2012-12-25 2014-06-26 Hitachi Kokusai Electric Inc. Method of manufacturing semiconductor device, substrate processing apparatus, and non-transitory computer-readable recording medium
US20150111378A1 (en) * 2013-10-23 2015-04-23 Hitachi Kokusai Electric Inc. Method of manufacturing semiconductor device and substrate processing apparatus

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