TWI692046B - Sensors and adjusters for consumables - Google Patents
Sensors and adjusters for consumables Download PDFInfo
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- TWI692046B TWI692046B TW105107506A TW105107506A TWI692046B TW I692046 B TWI692046 B TW I692046B TW 105107506 A TW105107506 A TW 105107506A TW 105107506 A TW105107506 A TW 105107506A TW I692046 B TWI692046 B TW I692046B
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- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32807—Construction (includes replacing parts of the apparatus)
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- H01J37/32—Gas-filled discharge tubes
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- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
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- H—ELECTRICITY
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- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
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- H01J2237/334—Etching
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Abstract
Description
本揭露內容係關於半導體元件之製造。具體而言,本揭露內容係關於在具有消耗性零件之處理腔室中之半導體元件之製造。 This disclosure relates to the manufacture of semiconductor devices. Specifically, the disclosure relates to the manufacture of semiconductor devices in processing chambers with consumable parts.
在半導體元件之製造中,可能在處理腔室中處理半導體。某些處理腔室具有消耗性零件。例如,蝕刻腔室可能具有消耗性邊緣環,其隨著時間被蝕刻。其它處理腔室可能具有消耗品,隨著時間在其上沉積著層。 In the manufacture of semiconductor components, it is possible to process semiconductors in processing chambers. Some processing chambers have consumable parts. For example, the etching chamber may have a consumable edge ring, which is etched over time. Other processing chambers may have consumables over which layers are deposited.
本文所揭露的是各種實施例,包括一表現形式,其中提供了用於處理腔室中之裝置。消耗品係位於處理腔室中。秤係設置以測量該消耗品之質量。 Disclosed herein are various embodiments, including a manifestation in which a device for use in a processing chamber is provided. The consumables are located in the processing chamber. The scale is set to measure the quality of the consumables.
在另一表現形式中,提供一方法。測量在處理腔室中之至少一消耗品之質量。使用該處理腔室。測量該至少一消耗品之質量之改變。根據該至少一消耗品之所測得的質量之改變,調節該至少一消耗品。 In another manifestation, a method is provided. Measure the mass of at least one consumable in the processing chamber. Use this processing chamber. The change in quality of the at least one consumable is measured. The at least one consumable is adjusted according to the change in the measured quality of the at least one consumable.
在另一表現形式中,提供一裝置。提供一電漿處理腔室。在處理腔室中提供一消耗品。壓電轉換器係設置以測量該消耗品之質量並且做為用於移動該消耗品之致動器。控制器係電連接至該壓電轉換器,其中該控制器包括至少一CPU以及電連接至該至少一CPU之電腦可讀媒體。該電腦可讀媒體包括:用 以測量之電腦可讀碼,用以測量來自該壓電轉換器之電壓或電流;用以判定之電腦可讀碼,用以從所測得的電壓或電流以判定施加電壓或電流;及用以施加之電腦可讀碼,用以施加經判定的施加電壓或電流於壓電轉換器,其中所施加的經判定的施加電壓或電流使該消耗品在處理腔室中移動。 In another form of expression, a device is provided. Provide a plasma processing chamber. A consumable is provided in the processing chamber. The piezoelectric transducer is provided to measure the mass of the consumable and serve as an actuator for moving the consumable. The controller is electrically connected to the piezoelectric transducer, wherein the controller includes at least one CPU and a computer-readable medium electrically connected to the at least one CPU. The computer-readable medium includes: A computer readable code to measure the voltage or current from the piezoelectric transducer; a computer readable code to determine from the measured voltage or current to determine the applied voltage or current; and An applied computer readable code is used to apply the determined applied voltage or current to the piezoelectric transducer, wherein the applied applied voltage or current is applied to move the consumable in the processing chamber.
這些及其它特徵將在以下的實施方式中伴隨著圖式更詳細地加以說明。 These and other features will be explained in more detail with the drawings in the following embodiments.
100:電漿處理腔室 100: plasma processing chamber
102:電漿反應器 102: Plasma reactor
104:電漿處理侷限腔室 104: plasma processing limited chamber
106:電漿電源 106: Plasma power supply
108:匹配網路 108: matching network
110:TCP線圈 110: TCP coil
112:功率窗 112: power window
114:電漿 114: plasma
116:晶圓偏壓電源 116: Wafer bias power supply
118:匹配網路 118: matching network
120:電極 120: electrode
124:控制器 124: controller
130:氣體源/氣體供應機構 130: gas source/gas supply mechanism
140:氣體注入器 140: gas injector
142:壓力控制閥 142: pressure control valve
144:泵 144: Pump
160:邊緣環 160: edge ring
164:基板 164: substrate
168:秤桿 168: Scale bar
172:秤 172: Scale
204:導線 204: wire
208:頂部表面 208: top surface
304:步驟 304: Step
308:步驟 308: Step
312:步驟 312: Step
316:步驟 316: Step
324:步驟 324: Step
328:步驟 328: Step
332:步驟 332: Step
400:蝕刻反應器 400: etching reactor
402:C形護罩 402: C-shaped shield
404:基板 404: substrate
406:氣體分配板 406: gas distribution plate
408:夾盤 408: Chuck
424:氣體源 424: Gas source
435:控制器 435: Controller
448:ESC源 448: ESC source
449:蝕刻腔室 449: Etching chamber
450:腔室壁 450: chamber wall
460:秤 460: Scale
462:懸桿 462: Suspension
464:處理環 464: Processing ring
600:電腦系統 600: computer system
602:處理器 602: processor
604:電子顯示裝置 604: Electronic display device
606:主記憶體 606: Main memory
608:儲存裝置 608: storage device
610:可移動儲存裝置 610: Removable storage device
612:使用者介面裝置 612: User interface device
614:通訊介面 614: Communication interface
616:通訊基礎架構 616: Communication infrastructure
在伴隨的圖式中,以範例的方式(而非限制的方式)說明所揭露的發明,其中類似的元件符號表示類似的元件,其中: In the accompanying drawings, the disclosed invention is illustrated by way of example (and not by way of limitation), wherein similar element symbols indicate similar elements, where:
圖1概要地說明電漿處理腔室之一範例之橫剖面圖,其可使用在一實施例中。 FIG. 1 schematically illustrates a cross-sectional view of an example of a plasma processing chamber, which can be used in an embodiment.
圖2A-C為邊緣環、基板、電極、秤及秤桿之部分之橫剖面之放大概要圖。 2A-C are enlarged schematic diagrams of cross sections of the edge ring, the base plate, the electrodes, the scale, and the scale bar.
圖3為一實施例之高階流程圖。 FIG. 3 is a high-level flowchart of an embodiment.
圖4為使用在另一實施例中之處理腔室之橫剖面圖。 4 is a cross-sectional view of a processing chamber used in another embodiment.
圖5為處理環之放大底視圖。 Figure 5 is an enlarged bottom view of the processing ring.
圖6為顯示一電腦系統之高階方塊圖,該電腦系統適合用來實施一控制器。 FIG. 6 is a high-level block diagram showing a computer system suitable for implementing a controller.
現在將詳細地敘述實施例,並且參考隨附圖式中所述的幾個實施例。在以下敘述中,特定細節被提出以提供對於本發明之徹底了解。然而,本 揭露內容可在沒有這些特定細節之部分或全部之情況下加以實施,且本揭露內容包含根據此技術領域中之通常知識可做出之變化。熟知的處理步驟及/或結構並未詳細地描述,以免不必要地混淆本揭露內容。 The embodiments will now be described in detail, and reference is made to the several embodiments described in the accompanying drawings. In the following description, specific details are presented to provide a thorough understanding of the present invention. However, this The disclosure content can be implemented without some or all of these specific details, and the disclosure content includes changes that can be made based on common knowledge in this technical field. Well-known processing steps and/or structures have not been described in detail so as not to unnecessarily obscure the disclosure.
為了幫助了解,圖1概要地說明電漿處理腔室100之一範例之橫剖面圖,其可使用在一實施例中。電漿處理腔室100包括電漿反應器102,電漿反應器102中具有電漿處理侷限腔室104。電漿電源106,由匹配網路108所調整,供應電力至位於功率窗112附近之TCP線圈110,以藉由提供一感應耦合功率而在電漿處理侷限腔室104中產生電漿114。TCP線圈(上功率源)110可用以在電漿處理侷限腔室104內產生均勻的散佈輪廓。例如,TCP線圈110可用以在電漿114中產生環形的功率分佈。提供功率窗112以將TCP線圈110與電漿處理侷限腔室104隔開,同時允許能量從TCP線圈110傳遞至電漿處理侷限腔室104。由匹配網路118所調整之晶圓偏壓電源116提供電力至電極120,以設定由電極120所支撐之基板164上之偏壓。
To help understanding, FIG. 1 schematically illustrates a cross-sectional view of an example of a
電漿電源106及晶圓偏壓電源116可用以操作於特定的射頻,例如,13.56MHz、27MHz、2MHz、60MHz、400kHz、2.54GHz或其組合。電漿電源106及晶圓偏壓電源116可製做成適當的尺寸以供應一電力範圍以達成想要的處理效能。例如,在本發明之一實施例中,電漿電源106可供應在50至5000瓦特之範圍中之功率,晶圓偏壓電源116可供應在20至2000伏特之範圍中之偏壓。此外,TCP線圈110及/或電極120可由二或更多次線圈或次電極所組成,其可由單一電源或複數電源來供電。
The
如圖1所示,電漿處理腔室100更包括氣體源/氣體供應機構130。氣體源130係經由氣體入口(例如,氣體注入器140)而流體連接至電漿處理侷限腔室104。氣體注入器140可位在電漿處理侷限腔室104中之任何有利的位置,並且可採取任何用以注入氣體之形式。然而,較佳地,氣體入口可用以產生「可
調整的」(tunable)氣體注入輪廓,其允許獨立地調整氣體之個別流動至電漿處理侷限腔室104中之多個區域。處理氣體及副產物係藉由壓力控制閥142及泵144而從電漿處理侷限腔室104移除,壓力控制閥142及泵144亦用來維持在電漿處理侷限腔室104中之特定壓力。在處理期間,壓力控制閥142可維持小於1Torr之壓力。邊緣環160係放置在基板164周圍。來自Lam Research Corp.of Fremont,CA之Kiyo可用於實行一實施例。在此實施例中,秤172係放置在邊緣環160之下。秤桿168係放置在秤172與邊緣環160之間。控制器124係可控制地連接至氣體源130、電漿電源106、晶圓偏壓電源116及秤172。
As shown in FIG. 1, the
圖2A為邊緣環160、基板164、電極120、秤172及秤桿168之部分之橫剖面之放大概要圖。在此實施例中,秤172為壓電轉換器,其利用無線連接或連接於秤172與控制器124之間之至少一導線204而電連接至控制器124。在此範例中,為了造成邊緣環之移動,控制器124施加一電壓穿過導線204至秤172。施加至秤172之電壓或遍及秤172之電荷造成秤172施加一力至秤桿且因此至邊緣環160。當該力大於邊緣環160之重量時,邊緣環將向上移動。當該力相等時,邊緣環保持不動/停止。當使用做為秤時,該系統是反轉的。控制器124取得來自秤172之電訊號,其與邊緣環160之新重量成比例。因此,壓電轉換器做為秤172(對邊緣環160之至少部分進行稱重)及致動器(移動邊緣環160之該至少部分)兩者。
2A is an enlarged schematic view of a cross section of a portion of the
圖3為一實施例之高階流程圖。秤係用於測量消耗品之質量(步驟304)。在此範例中,電漿處理侷限腔室104係用於蝕刻。因此,邊緣環160是消耗性的,其被蝕刻掉且必須定期更換。使用該處理腔室(步驟308)。在此範例中,蝕刻腔室係用於蝕刻基板。測量消耗品之質量之改變(步驟312)。在此範例中,邊緣環160之頂部被蝕刻掉。圖2B為邊緣環160之部分之放大橫剖面圖,其係在邊緣環160之頂部之部分已經被蝕刻掉之後,留下不平整的頂部表面
208。邊緣環160之頂部之部分被蝕刻掉會造成邊緣環160之質量之改變,其改變了在秤桿168上之力,其改變了秤桿168施加於秤172之力。力之改變允許秤172測量邊緣環160之重量或質量之改變。
FIG. 3 is a high-level flowchart of an embodiment. The scale is used to measure the quality of consumables (step 304). In this example, the plasma
控制器124使用所測得的質量之改變以判定消耗品是否需要被調節(步驟316)。若不需要調節,則程序回到使用處理腔室之步驟(步驟308),並且繼續程序。若需要調節,則控制器124可判定是否需要更換該消耗品(步驟324)。若控制器124判定該消耗品為待更換,則移除該邊緣環160並且提供一新的邊緣環(步驟328)。接著,該處理回到步驟304,以測量新的邊緣環之質量(步驟304)。當邊緣環之質量低於一臨界質量時,控制器124可判定邊緣環應該被更換。若控制器124判定不更換邊緣環160,則調節該消耗品(步驟332)。在此範例中,藉由移動邊緣環160以完成邊緣環160之調節。
The
圖2C為邊緣環160之部分之放大橫剖面圖,其係在部分已經被調節之後。在此範例中,由控制器124經由導線204所施加的較高電壓增加了秤172上之電荷,該秤172為壓電轉換器。壓電轉換器增加了施加至秤桿168之力,其使邊緣環160抬高。程序回到使用處理腔室之步驟(步驟308),並且繼續程序。
FIG. 2C is an enlarged cross-sectional view of a portion of the
邊緣環圍繞著電極(其可為陶瓷靜電夾盤,ESC),並且產生一特別調整的「容室」(pocket)在晶圓表面之下、之周圍及延伸於之上。經由仔細地選擇邊緣環直徑、高度、階部、半徑及角度(在其它參數中)以進行容室之調整。邊緣環是消耗性的物品,並且被電漿所侵蝕及變形。最終邊緣環變得如此耗損以致於它不再能適當地調整。此時,腔室之處理效果下降而超出規格,且需要更換邊緣環。邊緣環之更換需要打開腔室,其打斷了客戶的生產力。 The edge ring surrounds the electrode (which may be a ceramic electrostatic chuck, ESC) and creates a specially adjusted "pocket" below, around, and extending above the wafer surface. By carefully selecting the edge ring diameter, height, step, radius and angle (among other parameters) to adjust the chamber. The edge ring is a consumable item, and is eroded and deformed by the plasma. Eventually the edge ring becomes so worn that it can no longer be adjusted properly. At this time, the processing effect of the chamber drops and exceeds the specifications, and the edge ring needs to be replaced. The replacement of the edge ring requires opening the chamber, which interrupts the customer's productivity.
此實施例提供一系統,可原位地(in-situ)調整邊緣環以補償其耗損。該系統具有兩部分。一部分必須能夠偵測邊緣環已經耗損了多少。另一部 分必須能夠根據該邊緣環耗損了多少而調整它。此實施例提供一方式以在一小型單元中完成移動及感測。 This embodiment provides a system that can adjust the edge ring in-situ to compensate for its wear. The system has two parts. One part must be able to detect how much the edge ring has consumed. Another The points must be able to adjust the edge ring based on how much it has consumed. This embodiment provides a way to accomplish movement and sensing in a small unit.
在此範例中,壓電轉換器被用於進行移動及感測兩者。壓電致動器為電對機械的轉換器。它們接收電訊號並且將它轉換為非常細微、非常小、非常精確的機械運動。此運動係由致動器所施加之力所引起。此設計接著「反轉」該致動器,並且接收力及輸出電流/電壓,而不是接收電流/電壓及輸出力。該力為邊緣環之重量,其產生與該重量成比例之電流/電壓。電流/電壓之改變將是重量之改變。重量之改變將被校準至邊緣環耗損,且此系統將知道基於該讀值而移動邊緣環多少。 In this example, piezoelectric transducers are used for both movement and sensing. Piezoelectric actuators are electrical to mechanical converters. They receive the electrical signal and convert it into very fine, very small, and very precise mechanical motion. This movement is caused by the force applied by the actuator. This design then "reverses" the actuator and receives the force and output current/voltage instead of the current/voltage and output force. The force is the weight of the edge ring, which generates a current/voltage proportional to the weight. Changes in current/voltage will be changes in weight. The change in weight will be calibrated to the edge ring wear and the system will know how much to move the edge ring based on this reading.
邊緣環若為單一件,將被二或更多(可能是三或四)壓電轉換器垂直地移動。從邊緣環下方,轉換器將向上推該環以移動它,並且測量其重量之改變以分析其耗損。 If the edge ring is a single piece, it will be moved vertically by two or more (possibly three or four) piezoelectric transducers. From below the edge ring, the converter will push the ring up to move it, and measure its weight change to analyze its wear.
這樣的系統改善了使用雷射及鏡以測量邊緣環之蝕刻之系統。使用雷射及鏡之系統是龐大的,且對於併入處理腔室中不是理想的。這樣的系統也需要用於雷射訊號進出腔室之通路。此需要在敏感的位置中之另外的窗及密封件。 Such a system improves the system that uses lasers and mirrors to measure the etching of the edge ring. Systems using lasers and mirrors are bulky and are not ideal for incorporation into processing chambers. Such a system is also required for the passage of laser signals into and out of the chamber. This requires additional windows and seals in sensitive locations.
上述的範例進一步改善了雷射及鏡系統,其中上述的範例藉由節省空間、需要很少的真空導引、及與現存的處理腔室硬體不衝突而解決了問題。藉由使用現存的硬體及壓電致動器,上述的實施例解決了數個組裝、熱及RF訊號的問題,以進行邊緣環條件之分析。 The above example further improves the laser and mirror system. The above example solves the problem by saving space, requiring little vacuum guidance, and not conflicting with existing processing chamber hardware. By using existing hardware and piezoelectric actuators, the above embodiment solves several assembly, thermal, and RF signal issues for edge ring condition analysis.
一較佳實行例使用壓電轉換器,該壓電轉換器施加力以調整邊緣環位置並且也感測重量改變,以判定所需的調整量。另一設計將使用氣動轉換器。該氣動轉換器將壓力轉變為一力以移動該邊緣環。接著,致動器將轉換以感測 邊緣環之重量改變,並且輸出一壓力,該壓力將告訴工具要調整該邊緣環之位置多少。 A preferred embodiment uses a piezoelectric transducer that applies force to adjust the edge ring position and also senses the weight change to determine the amount of adjustment required. Another design will use a pneumatic converter. The pneumatic converter converts the pressure into a force to move the edge ring. Then, the actuator will switch to sense The weight of the edge ring changes and a pressure is output, which will tell the tool how much to adjust the position of the edge ring.
圖4為在另一實施例中之處理腔室之橫剖面圖。蝕刻反應器400包括提供氣體入口之氣體分配板406及夾盤408,在蝕刻腔室449中,由腔室壁450所包圍。在蝕刻腔室449中,其上形成著堆疊之基板404被放置在夾盤408之頂部上。夾盤408可提供來自ESC源448之偏壓而做為靜電夾盤(ESC)以用於固持基板404或可使用另外的夾持力以固持基板404。氣體源424係經由氣體分配板406而連接至蝕刻腔室449。電漿侷限護罩(在此實施例中,其為C形護罩402)圍繞著電漿容積。在此範例中,使用電容耦合以產生電漿。這樣的系統之一範例為來自Lam Research Corp.of Fremont,CA之Flex。在此範例中,複數秤460係設置在氣體分配板406上。該複數秤460之每一者係附接至複數懸桿(hanger)462之一者。該複數懸桿之每一者係連接至處理環464。在此範例中,秤460可包括壓電轉換器,其係電連接至控制器。
4 is a cross-sectional view of a processing chamber in another embodiment. The
圖5為處理環464之放大底視圖。在此範例中,處理環464係分成四分段。每一分段係連接至該複數懸桿462其中之二懸桿。在此範例中,使用該複數懸桿462之張力以測量處理環464之質量,而不是使用壓縮力以測量處理環464之質量。此外,可使用每一分段之質量,而不是測量整個處理環464之質量。在此實施例中,沉積物可能形成在處理環464上。因此,在此實施例中,處理環之調節可藉由對處理環實施沉積物移除步驟做為消耗品之調節之部分。在相同或另一實施例中,處理環464之該等分段可能被抬高或降低做為消耗品之調節之部分(步驟332)。在這樣的移動中,一分段之質量可能造成該分段之抬高或降低。在另一範例中,一分段之質量可能造成另一分段之抬高或降低。在這樣的實施例中,一分段之質量可用於判定在另一分段周圍之腔室之區域所需之補償。
FIG. 5 is an enlarged bottom view of the
圖6為顯示電腦系統600之高階方塊圖,該電腦系統600適合用來實施在實施例中所使用之控制器435。電腦系統可具有許多實體形式,其範圍從積體電路、印刷電路板、小型手持裝置到巨型超級電腦。電腦系統600包括一或更多處理器602,進一步可包括電子顯示裝置604(用以顯示圖形、文字、及其它資料)、主記憶體606(例如,隨機存取記憶體(RAM))、儲存裝置608(例如,硬碟機)、可移動儲存裝置610(例如,光學磁碟機)、使用者介面裝置612(例如,鍵盤、觸控螢幕、小鍵盤、滑鼠、或其他指向裝置等)、以及通訊介面614(例如,無線網路介面)。通訊介面614使軟體及資料可經由一線路在電腦系統600和外部裝置之間傳輸。該系統亦可包括與前述裝置/模組相連接之通訊基礎架構616(例如,通訊匯流排、交越條(cross-over bar)或網路)。
FIG. 6 is a high-level block diagram showing a
透過通訊介面614所傳輸之資訊,可能為例如電子、電磁、光學之訊號形式或其它能透過可傳輸訊號之通訊線路所傳輸、且為通訊介面614所接收之訊號形式,前述通訊線路可使用電線或電纜、光纖、電話線、行動電話線路、無線電頻率線路、及/或其它通訊管道加以實施。利用這樣的通訊介面,一或更多處理器602在執行前述方法步驟時,可接收來自網路之資訊,或可輸出資訊至該網路。再者,方法實施例可完全依靠處理器執行,或是可透過網路(例如網際網路)結合分擔部份處理的遠端處理器而執行。
The information transmitted through the
用語「非暫態電腦可讀媒體」(non-transient computer readable medium)一詞,普遍用於指例如主記憶體、輔助記憶體、可移動儲存裝置,例如硬碟等儲存裝置、快閃記憶體、磁碟機記憶體、CD-ROM及其它形式的永久記憶體之媒體,且不應用以涵蓋暫時性之內容,例如載波或訊號。電腦碼的範例包括例如由編譯器產生之機器碼、以及含有較高階編碼、使用直譯器由電腦所執行之檔案。電腦可讀媒體亦可能是體現於載波之電腦資料訊號所傳送之電腦碼,且該電腦碼代表可由處理器執行之一連串指令。 The term "non-transient computer readable medium" (non-transient computer readable medium) is commonly used to refer to, for example, main memory, auxiliary memory, removable storage devices, such as storage devices such as hard drives, flash memory, etc. , Drive memory, CD-ROM and other forms of permanent memory media, and should not be used to cover temporary content, such as carrier waves or signals. Examples of computer code include, for example, machine code generated by a compiler, and files that contain higher-level codes and are executed by a computer using an interpreter. The computer-readable medium may also be a computer code transmitted by a computer data signal embodied on a carrier wave, and the computer code represents a series of instructions that can be executed by the processor.
在一實施例中,在儲存裝置608中之電腦可讀碼使得壓電轉換器能夠做為秤。這樣的軟體可首先測量在壓電轉換器上之電壓或電荷。接著這樣的軟體使所測得的電壓或電荷與質量互相關聯。這樣的關聯可表示為函數或可藉由查詢表(lookup table)而提供。接著將提供經關聯的質量。在儲存裝置608中之電腦可讀碼亦可使壓電轉換器能夠做為致動器。這樣的軟體可使用經關聯的質量以判定想要的力、或被施加至處理環464之位移。接著該軟體將找出與相要的力或位移相關之電壓或電荷。該軟體接著施加所找出的電壓或電荷於壓電轉換器。
In one embodiment, the computer readable code in the
在另一實施例中,用於秤及致動器之軟體可以進一步被結合,其係藉由使用所測得的電壓或電荷以判定為了想要的位移之施加電壓或電荷以及判定是否必須移除消耗品。這樣的實施例仍具有秤及致動器,然而,更緊密的結合被使用,俾使質量未被計算,而是使用象徵著質量之電壓以判定是否需要致動或更換。使用電壓或電荷做為質量指示器,可能不判定最終的質量,而是使用質量指示器以判定一行動,其中這樣的行動係基於質量之改變,其反映在電壓之改變或電荷之改變,並且接著反映消耗品位置之改變。 In another embodiment, the software for scales and actuators can be further combined by using the measured voltage or charge to determine the applied voltage or charge for the desired displacement and whether it must be moved Except for consumables. Such an embodiment still has a scale and an actuator, however, a tighter combination is used, so that the mass is not calculated, but a voltage symbolizing the mass is used to determine whether actuation or replacement is needed. Using voltage or charge as a quality indicator may not determine the final quality, but use the quality indicator to determine an action, where such action is based on a change in mass, which is reflected in a change in voltage or a change in charge, and Then reflect the change in the position of consumables.
藉由使用轉換器為秤及致動器兩者,減少了用來執行這兩個功能之設備之底面積。在不同的實施例中,可在使用腔室不同次數之後測量質量之改變。例如,可在處理每一晶圓之後測量質量,或可在處理100片晶圓之後測量質量。在上述實施例中,秤之提供係藉由壓電轉換器與相關的電子元件,例如控制器與提供質量測量之軟體。若沒有適當的軟體,壓電轉換器不能用於測量質量,此意味著這樣的壓電轉換器不是秤。這樣的電壓或電荷之改變接著用於判定用於想要的致動應施加之電壓或電荷。 By using converters for both scales and actuators, the floor area of the equipment used to perform these two functions is reduced. In different embodiments, the change in mass can be measured after using the chamber a different number of times. For example, the quality can be measured after processing each wafer, or the quality can be measured after processing 100 wafers. In the above embodiments, the scale is provided by piezoelectric transducers and related electronic components, such as a controller and software that provides quality measurement. Without proper software, piezoelectric transducers cannot be used to measure mass, which means that such piezoelectric transducers are not scales. Such a change in voltage or charge is then used to determine the voltage or charge that should be applied for the desired actuation.
本發明雖已透過數個較佳實施例加以說明,但仍有許多落於本發明範疇內之替換、變更及各種置換均等物。有許多實施本發明之方法及裝置的替 代性方式。因此欲使以下隨附請求項解釋為包含所有落於本發明之真正精神及範疇內的此替換、變更及各種置換均等物。 Although the present invention has been described through several preferred embodiments, there are still many substitutions, alterations, and various substitution equivalents that fall within the scope of the invention. There are many alternatives for implementing the method and device of the present invention Alternative way. Therefore, it is intended that the following appended claims be interpreted as including all such substitutions, changes, and various substitution equivalents that fall within the true spirit and scope of the present invention.
100‧‧‧電漿處理腔室 100‧‧‧ plasma processing chamber
102‧‧‧電漿反應器 102‧‧‧Plasma reactor
104‧‧‧電漿處理侷限腔室 104‧‧‧Limited chamber for plasma processing
106‧‧‧電漿電源 106‧‧‧ Plasma power supply
108‧‧‧匹配網路 108‧‧‧ matching network
110‧‧‧TCP線圈 110‧‧‧TCP coil
112‧‧‧功率窗 112‧‧‧Power window
114‧‧‧電漿 114‧‧‧Plasma
116‧‧‧晶圓偏壓電源 116‧‧‧wafer bias power supply
118‧‧‧匹配網路 118‧‧‧ matching network
120‧‧‧電極 120‧‧‧electrode
124‧‧‧控制器 124‧‧‧Controller
130‧‧‧氣體源/氣體供應機構 130‧‧‧Gas source/gas supply mechanism
140‧‧‧氣體注入器 140‧‧‧Gas injector
142‧‧‧壓力控制閥 142‧‧‧pressure control valve
144‧‧‧泵 144‧‧‧pump
160‧‧‧邊緣環 160‧‧‧edge ring
164‧‧‧基板 164‧‧‧substrate
168‧‧‧秤桿 168‧‧‧Scale bar
172‧‧‧秤 172‧‧‧Scale
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| SG10201601918VA (en) | 2017-06-29 |
| TW201717299A (en) | 2017-05-16 |
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| US20170133283A1 (en) | 2017-05-11 |
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