TWI691559B - Paint and its manufacturing method - Google Patents
Paint and its manufacturing method Download PDFInfo
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- TWI691559B TWI691559B TW104143837A TW104143837A TWI691559B TW I691559 B TWI691559 B TW I691559B TW 104143837 A TW104143837 A TW 104143837A TW 104143837 A TW104143837 A TW 104143837A TW I691559 B TWI691559 B TW I691559B
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- silicon compound
- gel
- coating
- aforementioned
- porous body
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- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 238000007764 slot die coating Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- FOQJQXVUMYLJSU-UHFFFAOYSA-N triethoxy(1-triethoxysilylethyl)silane Chemical compound CCO[Si](OCC)(OCC)C(C)[Si](OCC)(OCC)OCC FOQJQXVUMYLJSU-UHFFFAOYSA-N 0.000 description 1
- PGVSPORIGRCPMG-UHFFFAOYSA-N triethoxy(1-triethoxysilylhexyl)silane Chemical compound CCCCCC([Si](OCC)(OCC)OCC)[Si](OCC)(OCC)OCC PGVSPORIGRCPMG-UHFFFAOYSA-N 0.000 description 1
- LMEKMHPYJBYBEV-UHFFFAOYSA-N triethoxy(2-triethoxysilylpropan-2-yl)silane Chemical compound CCO[Si](OCC)(OCC)C(C)(C)[Si](OCC)(OCC)OCC LMEKMHPYJBYBEV-UHFFFAOYSA-N 0.000 description 1
- NIINUVYELHEORX-UHFFFAOYSA-N triethoxy(triethoxysilylmethyl)silane Chemical compound CCO[Si](OCC)(OCC)C[Si](OCC)(OCC)OCC NIINUVYELHEORX-UHFFFAOYSA-N 0.000 description 1
- WGUISIBZFQKBPC-UHFFFAOYSA-N trimethoxy(1-trimethoxysilylpropyl)silane Chemical compound CO[Si](OC)(OC)C(CC)[Si](OC)(OC)OC WGUISIBZFQKBPC-UHFFFAOYSA-N 0.000 description 1
- QRTOPPGMVFGMNI-UHFFFAOYSA-N trimethoxy(3-trimethoxysilylbutan-2-yl)silane Chemical compound CO[Si](OC)(OC)C(C(C)[Si](OC)(OC)OC)C QRTOPPGMVFGMNI-UHFFFAOYSA-N 0.000 description 1
- BQXJQTRISSSESR-UHFFFAOYSA-N trimethoxy(3-trimethoxysilylpentan-3-yl)silane Chemical compound CO[Si](OC)(OC)C(CC)(CC)[Si](OC)(OC)OC BQXJQTRISSSESR-UHFFFAOYSA-N 0.000 description 1
- DJYGUVIGOGFJOF-UHFFFAOYSA-N trimethoxy(trimethoxysilylmethyl)silane Chemical compound CO[Si](OC)(OC)C[Si](OC)(OC)OC DJYGUVIGOGFJOF-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
- C09D7/40—Additives
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
- C08G77/16—Polysiloxanes containing silicon bound to oxygen-containing groups to hydroxyl groups
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/38—Polysiloxanes modified by chemical after-treatment
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/04—Polysiloxanes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B02—CRUSHING, PULVERISING, OR DISINTEGRATING; PREPARATORY TREATMENT OF GRAIN FOR MILLING
- B02C—CRUSHING, PULVERISING, OR DISINTEGRATING IN GENERAL; MILLING GRAIN
- B02C19/00—Other disintegrating devices or methods
- B02C19/18—Use of auxiliary physical effects, e.g. ultrasonics, irradiation, for disintegrating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B5/00—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts
- B32B5/16—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by features of a layer formed of particles, e.g. chips, powder or granules
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J3/00—Processes of treating or compounding macromolecular substances
- C08J3/02—Making solutions, dispersions, lattices or gels by other methods than by solution, emulsion or suspension polymerisation techniques
- C08J3/03—Making solutions, dispersions, lattices or gels by other methods than by solution, emulsion or suspension polymerisation techniques in aqueous media
- C08J3/075—Macromolecular gels
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Wood Science & Technology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- General Chemical & Material Sciences (AREA)
- Paints Or Removers (AREA)
Abstract
本發明目的在於提供一種可形成具有強度及可撓性之空隙 結構的塗料。 The purpose of the present invention is to provide a gap with strength and flexibility Structural paint.
本發明之塗料的特徵在於:含有凝膠狀矽化合物之粉碎 物及分散介質,且前述粉碎物含有殘留矽烷醇基,前述凝膠狀矽化合物係由至少含有3官能以下之飽和鍵官能基的矽化合物製得。本發明之塗料之製造方法的特徵在於例如包含一混合步驟,係將至少含有3官能以下之飽和鍵官能基的矽化合物凝膠化並使凝膠狀矽化合物及分散介質混合。藉由本發明之塗料,例如可藉由塗覆於基材上形成塗覆膜,並使前述塗覆膜中所含前述粉碎物彼此行化學結合而形成多孔質結構。 The coating of the present invention is characterized by the crushing of gel-like silicon compounds And the dispersing medium, and the pulverized product contains residual silanol groups, and the gel-like silicon compound is made of a silicon compound containing at least 3 functional groups or less saturated bond functional groups. The method for producing a coating material of the present invention is characterized by, for example, including a mixing step of gelling a silicon compound containing at least 3 functional saturated bond functional groups and mixing the gel-like silicon compound and a dispersion medium. With the coating material of the present invention, for example, a coating film can be formed by coating on a substrate, and the pulverized substances contained in the coating film can be chemically combined with each other to form a porous structure.
Description
本發明係有關於一種塗料及其製造方法。 The invention relates to a paint and a manufacturing method thereof.
針對可使用矽氧(silica)化合物材料(矽化合物材料)為原料來形成空隙結構的矽烷醇多孔體用溶膠液,迄今已有多種討論。該等的共通點在於,先將矽氧化合物凝膠化後,再調製出將前述凝膠化矽氧化合物粉碎而成的粉碎溶膠液,並予以塗佈而形成空隙結構。但,欲獲得較高的空孔率時卻有矽烷醇多孔體之膜強度顯著降低的問題,難以於工業上簡便地製得矽烷醇多孔體。兼顧高空孔率及強度的範例有應用於抗透鏡反射層之事例(例如,參照專利文獻1~4)。在該方法中係於透鏡上形成空隙層後長時間在150℃以上之高溫下進行燒成,但使用四乙氧矽烷(TEOS)為原料之凝膠可撓性很差,所以有無法在柔質基材上形成多孔體的課題。另外有未進行燒成處理的空隙層之應用事例(例如參照非專利文獻1)。但,在該方法中係矽烷醇粉碎溶膠中含有多量殘留矽烷醇基的狀態且未於空隙層形成後進行燒成處理,因此製得的多孔體有膜強度差、無法賦予
耐衝撃性之課題。
There have been various discussions on the sol solution for the silanol porous body that can use a silicon compound material (silicon compound material) as a raw material to form a void structure. The common point of these is that after the silicone compound is gelled, a crushed sol solution obtained by crushing the gelled silicone compound is prepared and applied to form a void structure. However, in order to obtain a higher porosity, there is a problem that the film strength of the silanol porous body is significantly reduced, and it is difficult to easily produce the silanol porous body industrially. Examples of taking into account the high porosity and strength are examples of application to anti-lens reflective layers (for example, refer to
為了解決這些問題,正在嘗試開發一種可用以替代以構件間之空隙形成之空氣層的薄膜。 In order to solve these problems, attempts are being made to develop a thin film that can replace the air layer formed by the gap between the members.
專利文獻1:日本專利特開2006-297329號公報 Patent Document 1: Japanese Patent Laid-Open No. 2006-297329
專利文獻2:日本專利特開2006-221144號公報 Patent Document 2: Japanese Patent Laid-Open No. 2006-221144
專利文獻3:日本專利特開2006-011175號公報 Patent Document 3: Japanese Patent Laid-Open No. 2006-011175
專利文獻4:日本專利特開2008-040171號公報 Patent Document 4: Japanese Patent Laid-Open No. 2008-040171
非專利文獻1:J. Mater. Chem.,.2011, 21, 14830-14837 Non-Patent Literature 1: J. Mater. Chem.,. 2011, 21, 14830-14837
以往,從未有研究報告過可獲得能簡單兼顧膜強度及可撓性之空隙層的溶膠塗料。爰此,本發明目的在於提供一種例如可用連續處理簡便地製膜形成具有高空孔率(空隙率)、膜強度及可撓性之空隙層的矽烷醇溶膠塗料。 In the past, there has never been any research report on obtaining a sol coating that can easily take into account the void layer of film strength and flexibility. Therefore, an object of the present invention is to provide a silanol sol paint having a high porosity (void ratio), a film strength, and a flexible void layer that can be easily formed into a film by continuous processing, for example.
為了達成前述目的,本發明之聚矽氧溶膠塗料的特徵在於:含有凝膠狀矽化合物之粉碎物與分散介質,且該凝膠狀矽化合物係由至少含有3官能以下之飽和鍵官能基的矽化合物製得;前述粉碎物含有1莫耳%以上之殘留矽 烷醇基,並且,前述聚矽氧溶膠塗料係用以使前述粉碎物彼此行化學結合的塗料。 In order to achieve the foregoing object, the polysilicone sol coating of the present invention is characterized by containing a pulverized product and a dispersion medium of a gel-like silicon compound, and the gel-like silicon compound is composed of a functional group containing at least 3 or less saturated bonds Manufactured from silicon compounds; the aforementioned crushed material contains more than 1 mole% of residual silicon Alkanol group, and the polysilica sol coating is a coating used to chemically bond the pulverized materials to each other.
本發明之聚矽氧溶膠塗料的製造方法特徵在於:包含一將凝膠狀矽化合物之粉碎物與分散介質混合之步驟,且該凝膠狀矽化合物係由至少含有3官能以下之飽和鍵官能基的矽化合物製得。 The manufacturing method of the polysilicone sol paint of the present invention is characterized by comprising a step of mixing the crushed material of the gel-like silicon compound and the dispersion medium, and the gel-like silicon compound is functionalized by containing at least 3 functional saturated bonds Based on silicon compounds.
本發明之第1塗料原料的特徵在於:係含有凝膠狀矽化合物且用以製造前述本發明之聚矽氧溶膠塗料的原料,且該凝膠狀矽化合物係由至少含有3官能以下之飽和鍵官能基的矽化合物製得。 The first coating raw material of the present invention is characterized in that it contains a gel-like silicon compound and is used as a raw material for producing the polysilicone sol coating of the present invention, and the gel-like silicon compound is saturated with at least 3 functions or less It is prepared by bonding functional silicon compound.
本發明之第1塗料原料的製造方法特徵在於包含一凝膠化步驟,係使至少含有3官能以下之飽和鍵官能基的矽化合物在溶劑中凝膠化而生成凝膠狀矽化合物。 The first method for producing a coating material of the present invention is characterized by including a gelation step in which a silicon compound containing at least 3 or less saturated bond functional groups is gelated in a solvent to produce a gel-like silicon compound.
本發明之第2塗料原料的特徵在於:係含有凝膠狀矽化合物且用以製造前述本發明之聚矽氧溶膠塗料的原料,該凝膠狀矽化合物係由至少含有3官能以下之飽和鍵官能基的矽化合物製得的凝膠狀物且施有熟成處理。 The second coating material of the present invention is characterized in that it contains a gel-like silicon compound and is used to produce the aforementioned polysilica sol coating of the present invention, and the gel-like silicon compound contains at least 3 functional or less saturated bonds A gel made of a silicon compound with functional groups and subjected to ripening treatment.
本發明之第2塗料原料的製造方法特徵在於包含一熟成步驟,係使凝膠狀矽化合物在溶劑中熟成,且該凝膠狀矽化合物係由至少含有3官能以下之飽和鍵官能基的矽化合物製得。 The second method for manufacturing a coating material of the present invention is characterized by including a maturation step in which a gel-like silicon compound is matured in a solvent, and the gel-like silicon compound is composed of silicon containing at least 3 or less saturated bond functional groups Compound prepared.
本發明之聚矽氧溶膠塗料含有前述凝膠狀矽化合物之粉碎物,可使前述粉碎物彼此行化學結合。因此, 例如在使用了前述塗料之塗覆膜中藉由使前述粉碎物彼此行化學結合即可製造出具有空隙之聚矽氧多孔體。 The polysilicone sol paint of the present invention contains the pulverized material of the gel-like silicon compound, which can chemically combine the pulverized materials. therefore, For example, in the coating film using the above-mentioned paint, the polysiloxane porous body having voids can be manufactured by chemically combining the pulverized materials with each other.
本發明人等精關研究的結果發現,對於凝膠狀矽烷醇化合物,藉由使矽烷醇基殘存,可令其粉碎物彼此行化學結合。而且發現,依據本發明之聚矽氧溶膠塗料,例如藉由形成塗覆膜並讓前述塗覆膜中之前述粉碎物彼此進行化學結合,可輕易且簡便地形成聚矽氧多孔體以作為可兼顧強度及可撓性的空隙層。依據本發明之聚矽氧溶膠塗料,例如可將前述矽烷醇多孔體應用在各種對象物上。具體上,使用本發明之聚矽氧溶膠塗料製得的聚矽氧多孔體可替代空氣層作為例如絕熱材、吸音材、再生醫療用支架材、結露防止材、光學構件等使用。因此,本發明之聚矽氧溶膠塗料及其製造方法可有效製造例如像前述的聚矽氧多孔體。 The inventors of the present invention have conducted a detailed study and found that for the gel-like silanol compound, by remaining the silanol group, the pulverized products can be chemically combined with each other. Furthermore, it has been found that the polysilica sol coating according to the present invention can form a polysiloxane porous body easily and simply by forming a coating film and chemically combining the pulverized materials in the coating film with each other, for example. A void layer that balances strength and flexibility. According to the polysilicone sol paint of the present invention, for example, the aforementioned silanol porous body can be applied to various objects. Specifically, the polysilicon porous body obtained by using the polysilicone sol paint of the present invention can be used as a heat insulating material, a sound absorbing material, a stent material for regenerative medicine, a dew condensation preventing material, an optical member, etc., instead of the air layer. Therefore, the polysilicone sol paint and its manufacturing method of the present invention can effectively manufacture, for example, the aforementioned polysilicone porous body.
10‧‧‧基材 10‧‧‧ Base material
20‧‧‧多孔質結構 20‧‧‧Porous structure
20’‧‧‧塗覆膜(前驅層) 20’‧‧‧Coated film (precursor layer)
20”‧‧‧塗料 20”‧‧‧Paint
21‧‧‧強度增強之多孔質結構 21‧‧‧Strengthened porous structure
101、201‧‧‧送出輥 101、201‧‧‧sending roller
102‧‧‧塗覆輥 102‧‧‧Coating roller
105、251‧‧‧卷取輥 105, 251‧‧‧ Take-up roller
106‧‧‧輥件 106‧‧‧Roller
110、210‧‧‧烘箱區 110, 210‧‧‧ oven area
111、131、231‧‧‧熱風器(加熱機構) 111,131,231‧‧‧Heater (heating mechanism)
120、220‧‧‧化學處理區 120, 220‧‧‧ chemical treatment area
121、221‧‧‧燈(光照射機構)或熱風器(加熱機構) 121, 221‧‧‧ lamp (light irradiation mechanism) or hot air heater (heating mechanism)
130a、230a‧‧‧黏接著層塗覆區 130a, 230a ‧‧‧ adhesive layer coating area
130、230‧‧‧中間層形成區 130, 230‧‧‧ Intermediate layer formation area
131a、231a‧‧‧黏接著層塗覆機構 131a, 231a ‧‧‧ adhesive layer coating mechanism
202‧‧‧儲液區 202‧‧‧Liquid storage area
203‧‧‧刮刀(doctor knife) 203‧‧‧ doctor knife
204‧‧‧微凹版 204‧‧‧ Microgravure
211‧‧‧加熱機構 211‧‧‧Heating mechanism
圖1係一步驟截面圖,其示意顯示使用本發明之塗料於基材10上形成聚矽氧多孔體20之方法一例。
FIG. 1 is a step cross-sectional view schematically showing an example of a method for forming a polysilicon
圖2係示意顯示使用本發明之塗料來製造聚矽氧多孔體之步驟一部分及其所採用之裝置一例之圖。 FIG. 2 is a diagram schematically showing an example of a part of the steps for manufacturing a polysilicon porous body using the coating material of the present invention and an example of the equipment used.
圖3係示意顯示使用本發明之塗料來製造聚矽氧多孔體之步驟一部分及其所採用之裝置另一例之圖。 FIG. 3 is a diagram schematically showing a part of the steps for manufacturing the polysilicon porous body using the coating material of the present invention and another example of the apparatus used.
圖4係一步驟截面圖,其示意顯示本發明中於基材上形成聚矽氧多孔體之方法另一例。 FIG. 4 is a one-step cross-sectional view schematically showing another example of a method of forming a polysilicon porous body on a substrate in the present invention.
圖5係示意顯示使用本發明之塗料來製造聚矽氧多孔 體之步驟一部分及其所採用之裝置又另一例之圖。 Fig. 5 is a schematic diagram showing the use of the coating of the present invention to produce polysilicon porous Part of the steps of the body and the diagram of another example of the device used.
圖6係示意顯示使用本發明之塗料來製造聚矽氧多孔體之步驟一部分及其所採用之裝置又另一例之圖。 FIG. 6 is a diagram schematically showing a part of the steps for manufacturing the polysilicon porous body using the coating material of the present invention and still another example of the apparatus used.
圖7係一步驟截面圖,其示意顯示本發明中於基材上形成聚矽氧多孔體之方法的又另一例。 FIG. 7 is a one-step cross-sectional view schematically showing still another example of the method of forming a polysilicon porous body on a substrate in the present invention.
圖8係示意顯示使用本發明之塗料來製造聚矽氧多孔體之步驟一部分及其所採用之裝置又另一例之圖。 FIG. 8 is a diagram schematically showing a part of the steps for manufacturing a polysilicon porous body using the coating material of the present invention and still another example of the apparatus used.
圖9係示意顯示使用本發明之塗料來製造聚矽氧多孔體之步驟一部分及其所採用之裝置又另一例之圖。 FIG. 9 is a diagram schematically showing a part of the steps for manufacturing the polysilicon porous body using the coating material of the present invention and still another example of the apparatus used.
本發明之塗料中,例如前述粉碎物之體積平均粒徑為0.05~2.00μm。不過,在本發明中,「粒子」(例如,前述粉碎物之粒子等)之形狀並無特別限定,例如可為球狀亦可為非球狀系等。還有,在本發明中,前述粉碎物之粒子例如亦可為溶膠凝膠串珠狀粒子、奈米粒子(空心奈米二氧化矽‧奈米球粒子)、奈米纖維等。 In the paint of the present invention, for example, the volume average particle diameter of the pulverized product is 0.05 to 2.00 μm. However, in the present invention, the shape of "particles" (for example, the particles of the pulverized product, etc.) is not particularly limited, and may be spherical or non-spherical, for example. In the present invention, the particles of the pulverized product may be, for example, sol-gel beaded particles, nanoparticles (hollow nanosilica·nanosphere particles), nanofibers, and the like.
本發明之塗料中,例如,前述矽化合物為後述式(2)所示化合物。 In the paint of the present invention, for example, the aforementioned silicon compound is a compound represented by formula (2) described later.
本發明之塗料例如含有用以使前述粉碎物彼此行化學結合之觸媒。 The coating material of the present invention contains, for example, a catalyst for chemically bonding the aforementioned pulverized products.
本發明之塗料之製造方法例如更包含一使前述凝膠狀矽化合物在溶劑中粉碎的粉碎步驟,且在前述混合步驟係使用藉由前述粉碎步驟所得的粉碎物。 The method for producing a paint of the present invention further includes, for example, a pulverizing step of pulverizing the gel-like silicon compound in a solvent, and using the pulverized product obtained by the pulverizing step in the mixing step.
本發明之塗料之製造方法例如更包含一使前述矽化合物在溶劑中凝膠化而生成凝膠狀矽化合物的凝膠化步驟,且在前述粉碎步驟係使用藉由前述生成步驟所得的凝膠狀矽化合物。 The manufacturing method of the paint of the present invention further includes, for example, a gelation step of gelating the silicon compound in a solvent to generate a gel-like silicon compound, and using the gel obtained by the generation step in the pulverization step Silicon compound.
本發明之塗料之製造方法例如更包含一使前述凝膠狀矽化合物在溶劑中熟成的熟成步驟,且在前述凝膠化步驟係使用前述熟成步驟後之前述凝膠狀矽化合物。 The manufacturing method of the paint of the present invention further includes, for example, a aging step of aging the gel-like silicon compound in a solvent, and using the gel-like silicon compound after the aging step in the gelation step.
本發明之塗料之製造方法例如在前述熟成步驟係使前述凝膠狀矽化合物在前述溶劑中於30℃以上的溫度下培養而熟成。 In the method for producing a paint of the present invention, for example, in the aging step, the gel-like silicon compound is cultured in the solvent at a temperature of 30° C. or higher and cooked.
以下,針對本發明將舉例進一步具體說明。惟,本發明不受以下說明限定及限制。 Hereinafter, the present invention will be further specifically described by way of examples. However, the present invention is not limited and limited by the following description.
[1.塗料及其製造方法] [1. Paint and its manufacturing method]
如前述,本發明之聚矽氧溶膠塗料的特徵在於:含有凝膠狀矽化合物之粉碎物及溶劑且該凝膠狀矽化合物係由至少含有3官能以下之飽和鍵官能基的矽化合物製得,前述粉碎物含有殘留矽烷醇基,並且,本發明之聚矽氧溶膠塗料為用以使前述粉碎物彼此行化學結合之塗料。「含有3官能基以下之飽和鍵官能基」係表示矽化合物具有3個以下官能基且該等官能基與矽(Si)形成飽和鍵結。 As mentioned above, the polysilicone sol coating of the present invention is characterized in that it contains a pulverized product of a gel-like silicon compound and a solvent and the gel-like silicon compound is prepared from a silicon compound containing at least 3 functional saturated bond functional groups or less The pulverized product contains residual silanol groups, and the polysilicone sol coating of the present invention is a coating for chemically combining the pulverized products with each other. "Saturated bond functional group containing less than 3 functional groups" means that the silicon compound has less than 3 functional groups and these functional groups form a saturated bond with silicon (Si).
如前述,本發明之塗料之製造方法為前述本發明之聚矽氧溶膠塗料的製造方法,其特徵在於:包含將凝膠狀矽化合物之粉碎物及分散介質混合之步驟,該凝膠狀矽化合物係由至少含有3官能以下之飽和鍵官能基的矽化合 物製得。 As mentioned above, the method for manufacturing the coating of the present invention is the method for manufacturing the polysilicone sol coating of the present invention, which is characterized by comprising the steps of mixing the crushed material of the gel-like silicon compound and the dispersion medium. The compound consists of a silicon compound containing at least 3 functional saturated bond groups or less Material.
本發明之塗料如後述,可用來製造可發揮與空氣層相同機能(例如低折射性)的聚矽氧多孔體。具體上,藉由本發明之製造方法製得的塗料含有前述凝膠狀矽化合物之粉碎物,前述粉碎物係未粉碎之前述凝膠狀矽化合物的三維結構遭受破壞而得以形成與前述未粉碎之凝膠狀矽化合物截然不同的全新三維結構。所以,例如使用前述塗料所形成的塗覆膜(聚矽氧多孔體之前驅物)會成為一可形成利用前述未粉碎之凝膠狀矽化合物形成之層無法造就的全新孔結構(全新空隙結構)之層。藉此,前述層便可發揮與空氣層相同機能(例如相同的低折射性)。另外,本發明之塗料因為前述粉碎物含有殘留矽烷醇基,所以以前述塗覆膜(聚矽氧多孔體之前驅物)形成全新的三維結構後,可使前述粉碎物彼此行化學結合。藉此,所形成的聚矽氧多孔體雖具有空隙之結構,卻又可維持充分的強度及可撓性。因此,依據本發明可輕易且簡便地將聚矽氧多孔體供給於各種對象物。藉由本發明之製造方法製得的塗料例如在能成為空氣層之代替品的前述多孔質結構之製造中就非常有用。又,在前述空氣層的情況下,以往例如必須以構件及構件兩者間隔著分隔件等方式設置間隙予以積層,藉以在前述構件間形成空氣層。但,使用本發明之塗料形成的前述聚矽氧多孔體僅需將其配置在目的部位上,便可發揮與前述空氣層相同的機能。因此,如前述,比起形成前述空氣層更可輕易且簡便地賦予各種對象物與前述空氣層相同的機能。 具體上,前述多孔質結構例如可替代空氣層作為絕熱材、吸音材、再生醫療用支架材、結露防止材等使用。 As described later, the coating material of the present invention can be used to produce a polysilicon porous body that can perform the same function as the air layer (for example, low refractive index). Specifically, the paint produced by the manufacturing method of the present invention contains a pulverized product of the gel-like silicon compound, and the pulverized product is the three-dimensional structure of the un-pulverized gel-like silicon compound that is damaged to form the unpulverized A completely new three-dimensional structure of gel-like silicon compounds. Therefore, for example, the coating film (precursor of polysilicon porous body) formed by using the aforementioned coating will become a new pore structure (new void structure) that cannot be formed by the layer formed by the aforementioned uncrushed gel-like silicon compound ) Layer. Thereby, the aforementioned layer can exert the same function as the air layer (for example, the same low refractive index). In addition, since the coating material of the present invention contains residual silanol groups, the coating film (precursor of polysilicon porous body) is used to form a completely new three-dimensional structure, so that the crushed materials can be chemically combined with each other. In this way, although the formed polysilicon porous body has a void structure, it can maintain sufficient strength and flexibility. Therefore, according to the present invention, the polysilicon porous body can be easily and simply supplied to various objects. The coating material produced by the manufacturing method of the present invention is very useful, for example, in the production of the aforementioned porous structure that can be used as a substitute for the air layer. In addition, in the case of the air layer, in the past, for example, it is necessary to provide a layer with a gap between the member and both members separated by a separator, etc., to form an air layer between the members. However, the polysiloxane porous body formed using the coating material of the present invention only needs to be disposed on the target site, and can perform the same function as the air layer. Therefore, as described above, it is easier and easier to give various objects the same function as the air layer than to form the air layer. Specifically, the aforementioned porous structure can be used as a heat insulating material, a sound absorbing material, a stent material for regenerative medicine, a dew condensation preventing material, etc., instead of the air layer, for example.
本發明之塗料例如亦可為聚矽氧多孔體形成用塗料或低折射層形成用塗料。在本發明之塗料中,前述凝膠狀矽化合物為其粉碎物。 The coating material of the present invention may be, for example, a coating material for forming a porous silicone body or a coating material for forming a low-refractive layer. In the paint of the present invention, the aforementioned gel-like silicon compound is a pulverized product.
在本發明之聚矽氧多孔體中,前述粉碎物之體積平均粒徑無特別限制,其下限例如為0.05μm以上、0.10μm以上、0.20μm以上,0.40μm以上,其上限例如為2.00μm以下、1.50μm以下、1.00μm以下,其範圍則例如為0.05μm~2.00μm、0.20μm~1.50μm、0.40μm~1.00μm。前述體積平均粒徑係表示前述粉碎物在本發明之塗料中的粒度偏差。前述粒度分布例如可藉由動態光散射法、雷射繞射法等粒度分布評估裝置及掃描型電子顯微鏡(SEM)、穿透型電子顯微鏡(TEM)等電子顯微鏡等進行測定。 In the polysilicon porous body of the present invention, the volume average particle diameter of the pulverized product is not particularly limited, and its lower limit is, for example, 0.05 μm or more, 0.10 μm or more, 0.20 μm or more, 0.40 μm or more, and its upper limit is, for example, 2.00 μm or less , 1.50 μm or less, 1.00 μm or less, the range is, for example, 0.05 μm to 2.00 μm, 0.20 μm to 1.50 μm, 0.40 μm to 1.00 μm. The volume average particle diameter means the particle size deviation of the pulverized product in the paint of the present invention. The aforementioned particle size distribution can be measured by, for example, a particle size distribution evaluation device such as dynamic light scattering method and laser diffraction method, and an electron microscope such as a scanning electron microscope (SEM) and a transmission electron microscope (TEM).
又,在本發明之塗料中,前述粉碎物之粒度分布並無特別限制,例如粒徑0.4μm~1μm的粒子為50~99.9重量%、80~99.8重量%、90~99.7重量%,或是粒徑1μm~2μm的粒子為0.1~50重量%、0.2~20重量%、0.3~10重量%。前述粒度分布係表示前述粉碎物在本發明之塗料中的粒度偏差。前述粒度分布例如可藉由粒度分布評估裝置或電子顯微鏡測得。 In addition, in the coating material of the present invention, the particle size distribution of the pulverized product is not particularly limited, for example, particles with a particle size of 0.4 μm to 1 μm are 50 to 99.9% by weight, 80 to 99.8% by weight, 90 to 99.7% by weight, or The particles with a particle size of 1 μm to 2 μm are 0.1 to 50% by weight, 0.2 to 20% by weight, and 0.3 to 10% by weight. The aforementioned particle size distribution indicates the particle size deviation of the aforementioned pulverized product in the coating material of the present invention. The aforementioned particle size distribution can be measured by, for example, a particle size distribution evaluation device or an electron microscope.
在本發明之塗料中,前述矽化合物例如為下述式(2)所示化合物。 In the paint of the present invention, the silicon compound is, for example, a compound represented by the following formula (2).
前述式(2)中,例如X為2、3或4,R1及R2分別為直鏈烷基或分枝烷基,R1及R2可相同亦可互異,X為2時,R1彼此可相同亦可互異,R2彼此可相同亦可互異。 In the above formula (2), for example, X is 2, 3, or 4, R 1 and R 2 are straight-chain alkyl or branched alkyl, R 1 and R 2 may be the same or different from each other, when X is 2, R 1 may be the same or different from each other, and R 2 may be the same or different from each other.
前述X及R1例如與前述式(1)之X及R1相同。另外,前述R2例如可沿用後述式(1)之R1之示例。 X and R, for example, the same as in the above formula (1) of X 1 and R 1. In addition, for the aforementioned R 2, for example, the example of R 1 in formula (1) described later can be used.
前述式(2)所示矽化合物的具體例可舉如X為3之下述式(2’)所示化合物。下述式(2’)中,R1及R2分別與前述式(2)相同。R1及R2為甲基時,前述矽化合物為三甲氧(甲基)矽烷(以下亦稱「MTMS」)。 Specific examples of the silicon compound represented by the aforementioned formula (2) include compounds represented by the following formula (2′) where X is 3. In the following formula (2'), R 1 and R 2 are the same as in the above formula (2). When R 1 and R 2 are methyl groups, the aforementioned silicon compound is trimethoxy (methyl) silane (hereinafter also referred to as “MTMS”).
在本發明之塗料中,前述凝膠狀矽化合物之粉碎物在前述分散介質中的濃度並無特別限制,例如為0.3~50%(v/v)、0.5~30%(v/v)、1.0~10%(v/v)。前述粉碎物之濃度一旦太高,例如溶膠溶液的流動性可能會顯著降低而 於塗覆時產生凝結物‧塗痕。另一方面,前述粉碎物的濃度一旦太低,例如,不僅前述溶劑乾燥需耗費相當的時間,且剛乾燥後的殘留溶劑也會增高,因而空隙率可能會降低。另外,本發明之塗料以例如所含之矽原子呈矽氧烷鍵結為佳。就具體例而言,前述塗料所含之總矽原子中,未鍵結之矽原子(亦即殘留矽烷醇)的比率例如為:低於50%、30%以下、15%以下。 In the coating of the present invention, the concentration of the crushed product of the gel-like silicon compound in the dispersion medium is not particularly limited, for example, it is 0.3-50% (v/v), 0.5-30% (v/v), 1.0~10%(v/v). Once the concentration of the aforementioned crushed material is too high, for example, the fluidity of the sol solution may be significantly reduced and Condensation and smearing occurred during coating. On the other hand, once the concentration of the pulverized product is too low, for example, not only does it take a considerable amount of time to dry the solvent, but also the residual solvent immediately after drying increases, so the porosity may decrease. In addition, in the coating of the present invention, for example, it is preferable that the silicon atoms contained are bonded with siloxane. As a specific example, the ratio of unbonded silicon atoms (that is, residual silanol) in the total silicon atoms contained in the aforementioned coating is, for example, less than 50%, 30% or less, and 15% or less.
本發明之塗料物性並無特別限制。前述塗料的剪切黏度例如在10001/s之剪切速度下,例如為:黏度100cPa‧s以下、黏度10cPa‧s以下、黏度1cPa‧s以下。剪切黏度一旦過高,例如可能會產生塗痕而出現凹版塗覆之轉印率降低等不良情況。相反地,剪切黏度一旦過低,例如就可能無法加厚塗覆時的濕式塗佈厚度而無法於乾燥後獲得期望的厚度。 The physical properties of the coating of the present invention are not particularly limited. The shear viscosity of the aforementioned coating is, for example, at a shear rate of 10001/s, such as: viscosity below 100 cPa‧s, viscosity below 10 cPa‧s, and viscosity below 1 cPa‧s. Once the shear viscosity is too high, for example, coating marks may occur and the transfer rate of gravure coating may be reduced. Conversely, once the shear viscosity is too low, for example, the wet coating thickness during coating may not be increased and the desired thickness may not be obtained after drying.
在本發明之塗料中,前述分散介質(以下亦稱「塗覆用溶劑」)並無特別限制,可舉如後述之凝膠化溶劑及粉碎用溶劑,且宜為前述粉碎用溶劑。前述塗覆用溶劑溶劑可舉如沸點130℃以下的有機溶劑。具體例可舉如IPA、乙醇、甲醇、丁醇等。 In the coating material of the present invention, the dispersion medium (hereinafter also referred to as "coating solvent") is not particularly limited, and examples thereof include a gelation solvent and a grinding solvent described below, and the grinding solvent is preferably the aforementioned. Examples of the solvent for coating include organic solvents having a boiling point of 130° C. or lower. Specific examples include IPA, ethanol, methanol, and butanol.
本發明之塗料例如亦可含有用以使前述凝膠狀矽化合物之粉碎物彼此行化學結合的觸媒。前述觸媒之含有率並無特別限定,相對於前述凝膠狀矽化合物之粉碎物的重量,例如為0.01~20重量%、0.05~10重量%或0.1~5重量%。 The paint of the present invention may contain, for example, a catalyst for chemically bonding the crushed products of the gel-like silicon compound. The content of the catalyst is not particularly limited, and it is, for example, 0.01 to 20% by weight, 0.05 to 10% by weight, or 0.1 to 5% by weight with respect to the weight of the pulverized product of the gel-like silicon compound.
另外,本發明之塗料例如更可含有用以使前述凝膠狀矽化合物之粉碎物彼此間接結合的交聯輔助劑。前述交聯輔助劑之含有率並無特別限定,例如相對於前述凝膠狀矽化合物之粉碎物的重量,為0.01~20重量%、0.05~15重量%或0.1~10重量%。 In addition, the coating material of the present invention may further contain a cross-linking auxiliary agent for indirectly bonding the crushed products of the gel-like silicon compound, for example. The content of the cross-linking auxiliary agent is not particularly limited. For example, it is 0.01 to 20% by weight, 0.05 to 15% by weight, or 0.1 to 10% by weight with respect to the weight of the pulverized product of the gel-like silicon compound.
本發明之塗料例如係分散於前述溶劑之溶膠狀的前述粉碎物,故而亦稱為例如「溶膠粒子液」。本發明之塗料例如可在塗覆於基材上並經乾燥後,藉由結合步驟進行化學交聯而連續成膜出具有一定程度以上之膜強度的空隙層。另外,本發明之「溶膠」意指將凝膠之三維結構予以粉碎,使前述粉碎物(亦即保持了空隙結構一部分的奈米三維結構之二氧化矽溶膠粒子)分散於溶劑中並顯現流動性的狀態。 The coating material of the present invention is, for example, the sol-like pulverized product dispersed in the solvent, so it is also called, for example, "sol particle liquid". For example, the coating material of the present invention can be applied to a substrate and dried, and then chemically cross-linked through a bonding step to continuously form a void layer having a film strength of a certain degree or more. In addition, the "sol" in the present invention means that the three-dimensional structure of the gel is pulverized, so that the pulverized product (that is, the silica dioxide sol particles having the nano three-dimensional structure that retains a part of the void structure) is dispersed in the solvent and appears to flow Sexual status.
以下說明本發明之製造方法,且本發明之塗料可沿用以下說明。 The manufacturing method of the present invention will be described below, and the coating of the present invention may be used as described below.
在本發明之製造方法中,前述混合步驟如前述係將凝膠狀矽化合物之粉碎物及分散介質予以混合的步驟,且該凝膠狀矽化合物係由至少含有3官能以下之飽和鍵官能基的矽化合物製得。在本發明中,前述凝膠狀矽化合物之粉碎物例如可藉由後述之粉碎步驟自前述凝膠狀矽化合物製得。因此,前述凝膠狀矽化合物例如亦可稱為本發明之塗料的第1塗料原料。另外,前述凝膠狀矽化合物之粉碎物例如可藉由後述的粉碎步驟,自已施行後述熟成步驟之熟成處理後的前述凝膠狀矽化合物製得。因此,前述熟成 處理後之前述凝膠狀矽化合物例如亦可稱為本發明之塗料的第2塗料原料。 In the manufacturing method of the present invention, the mixing step is the step of mixing the pulverized product of the gel-like silicon compound and the dispersion medium as described above, and the gel-like silicon compound is composed of functional groups containing at least 3 or less saturated bonds Made of silicon compounds. In the present invention, the pulverized product of the gel-like silicon compound can be prepared from the gel-like silicon compound by, for example, a pulverization step described later. Therefore, the aforementioned gel-like silicon compound may also be referred to as the first coating material of the coating of the present invention, for example. In addition, the pulverized product of the gel-like silicon compound can be produced, for example, by the pulverization step described below from the gel-like silicon compound after the aging process of the aging step described later. Therefore, the aforementioned ripening The aforementioned gel-like silicon compound after the treatment can also be referred to as the second coating material of the coating of the present invention, for example.
在本發明之製造方法中,凝膠化步驟係使前述至少含有3官能以下之飽和鍵官能基的矽化合物在溶劑中凝膠化而生成凝膠狀矽化合物(第1塗料原料)的步驟。前述凝膠化步驟例如係在脫水縮合觸媒之存在下,藉由脫水縮合反應將單體之前述矽化合物予以凝膠化的步驟,藉此可獲得凝膠狀矽化合物。如前述,前述凝膠狀矽化合物具有殘留矽烷醇基,前述殘留矽烷醇基宜因應後述之前述凝膠狀矽化合物之粉碎物彼此的化學結合來適度調整。 In the production method of the present invention, the gelation step is a step of gelating the silicon compound containing at least 3 functional groups or less of a saturated bond functional group in a solvent to produce a gel-like silicon compound (first coating material). The aforementioned gelation step is, for example, a step of gelating the aforementioned silicon compound of the monomer by a dehydration condensation reaction in the presence of a dehydration condensation catalyst, whereby a gel-like silicon compound can be obtained. As described above, the gel-like silicon compound has residual silanol groups, and the residual silanol group is suitably adjusted in accordance with the chemical combination of the pulverized products of the gel-like silicon compound described later.
在前述凝膠化步驟中,前述矽化合物並無特別限制,只要是藉由脫水縮合反應凝膠化者即可。藉由前述脫水縮合,例如前述矽化合物間便可結合。前述矽化合物間之結合例如為氫結合或分子間力結合。 In the gelation step, the silicon compound is not particularly limited, as long as it is gelled by a dehydration condensation reaction. By the aforementioned dehydration condensation, for example, the aforementioned silicon compounds can be combined. The bonding between the aforementioned silicon compounds is, for example, hydrogen bonding or intermolecular force bonding.
前述矽化合物可舉如下述式(1)所示者。前述式(1)之矽化合物具有羥基,因此前述式(1)之矽化合物間例如可透過各自的羥基行氫結合或分子間力結合。 The aforementioned silicon compound can be exemplified by the following formula (1). Since the silicon compound of the aforementioned formula (1) has a hydroxyl group, the silicon compounds of the aforementioned formula (1) can be hydrogen bonded or intermolecularly bonded through the respective hydroxyl groups, for example.
前述式(1)中,例如X為2、3或4,R1為直鏈烷基或分枝烷基。前述R1之碳數例如為1~6、1~4、1~2。前述直鏈烷基可舉如甲基、乙基、丙基、丁基、戊基、己基等,前述分枝烷基可舉如異丙基、異丁基等。前述X例如為 3或4。 In the aforementioned formula (1), for example, X is 2, 3 or 4, and R 1 is a linear alkyl group or a branched alkyl group. The carbon number of the aforementioned R 1 is , for example, 1 to 6, 1 to 4, and 1 to 2. Examples of the linear alkyl group include methyl, ethyl, propyl, butyl, pentyl, and hexyl groups, and examples of the branched alkyl group include isopropyl group and isobutyl group. The aforementioned X is, for example, 3 or 4.
前述式(1)所示矽化合物的具體例可舉如X為3之下述式(1’)所示化合物。下述式(1’)中,R1與前述式(1)相同,例如為甲基。R1為甲基時,前述矽化合物即為參(羥)甲基矽烷。前述X為3時,前述矽化合物例如為具有3個官能基的3官能矽烷。 Specific examples of the silicon compound represented by the aforementioned formula (1) include compounds represented by the following formula (1′) where X is 3. In the following formula (1′), R 1 is the same as the aforementioned formula (1), and is, for example, a methyl group. When R 1 is a methyl group, the aforementioned silicon compound is ginseng (hydroxy) methyl silane. When X is 3, the silicon compound is, for example, trifunctional silane having three functional groups.
又,前述式(1)所示矽化合物之具體例可舉如X為4之化合物。此時,前述矽化合物例如為具有4個官能基的4官能矽烷。 In addition, specific examples of the silicon compound represented by the above formula (1) include compounds in which X is 4. At this time, the aforementioned silicon compound is, for example, a tetrafunctional silane having four functional groups.
前述矽化合物亦可為例如藉由水解形成前述式(1)之矽化合物的前驅物。作為前述前驅物,例如只要是可藉由水解生成前述矽化合物者即可,具體例可列舉前述式(2)所示化合物。 The silicon compound may be a precursor for forming the silicon compound of the formula (1) by hydrolysis, for example. As the precursor, for example, as long as it can generate the silicon compound by hydrolysis, specific examples include the compound represented by the formula (2).
前述矽化合物為前述式(2)所示前驅物時,本發明之製造方法例如可包含在前述凝膠化步驟之前先將前述前驅物予以水解的步驟。 When the silicon compound is a precursor represented by the formula (2), the manufacturing method of the present invention may include, for example, a step of hydrolyzing the precursor before the gelation step.
前述水解方法並無特別限制,例如可藉由觸媒存在下之化學反應進行。前述觸媒可舉如草酸、乙酸等之酸等。前述水解反應例如可在室溫環境下,將草酸水溶液緩 慢地滴下混合至前述矽化合物前驅物之二甲亞碸溶液後,就此攪拌30分左右來進行。在水解前述矽化合物前驅物時,例如可將前述矽化合物前驅物之烷氧基完全水解,以便更有效率地顯現其後之凝膠化‧熟成‧空隙結構形成後的加熱‧固定化。 The aforementioned hydrolysis method is not particularly limited, and for example, it can be carried out by a chemical reaction in the presence of a catalyst. Examples of the aforementioned catalyst include acids such as oxalic acid and acetic acid. For the aforementioned hydrolysis reaction, for example, an aqueous solution of oxalic acid can be After slowly dropping and mixing into the dimethyl sulfoxide solution of the aforementioned silicon compound precursor, stirring is carried out for about 30 minutes. When hydrolyzing the aforementioned silicon compound precursor, for example, the alkoxy group of the aforementioned silicon compound precursor can be completely hydrolyzed to more effectively show the subsequent gelation, aging, heating and fixation after the formation of the void structure.
在本發明中,前述矽化合物可例舉三甲氧(甲基)矽烷之水解物。 In the present invention, the aforementioned silicon compound may, for example, be a hydrolyzate of trimethoxy(methyl)silane.
前述單體的矽化合物並無特別限制,例如可因應製造聚矽氧多孔體的用途適宜選擇。在前述聚矽氧多孔體的製造過程中,例如在重視低折射率性的情況下,基於低折射率性佳的觀點,前述矽化合物以前述3官能矽烷為宜;又,在重視強度(例如耐擦傷性)的情況下,基於耐擦傷性佳,前述矽化合物以前述4官能矽烷為佳。另外,屬前述凝膠狀矽化合物之原料的前述矽化合物例如可僅使用一種,亦可將二種以上併用。就具體例而言,作為前述矽化合物例如可僅含有前述3官能矽烷,亦可僅含有前述4官能矽烷,或可含有前述3官能矽烷及前述4官能矽烷兩者,更可含有其它的矽化合物。使用二種以上矽化合物作為前述矽化合物時,其比率並無特別限制,可適宜設定。 The above-mentioned monomeric silicon compound is not particularly limited, and for example, it can be appropriately selected according to the purpose of manufacturing the polysilicon porous body. In the manufacturing process of the aforementioned polysilicon porous body, for example, when low refractive index is emphasized, from the viewpoint of good low refractive index, the silicon compound is preferably the trifunctional silane; In the case of scratch resistance), based on the excellent scratch resistance, the aforementioned silicon compound is preferably the aforementioned tetrafunctional silane. In addition, for example, the silicon compound that is the raw material of the gel-like silicon compound may be used alone, or two or more kinds may be used in combination. As a specific example, the silicon compound may contain, for example, the trifunctional silane alone, the tetrafunctional silane alone, or both the trifunctional silane and the tetrafunctional silane, or may contain other silicon compounds. . When two or more silicon compounds are used as the aforementioned silicon compounds, the ratio is not particularly limited and can be set as appropriate.
前述矽化合物之凝膠化例如可藉由前述矽化合物間之脫水縮合反應來進行。前述脫水縮合反應例如宜在觸媒存在下進行,前述觸媒可舉例如酸觸媒及鹼性觸媒等脫水縮合觸媒,前述酸觸媒有鹽酸、草酸、硫酸等,前述鹼性觸媒有氨、氫氧化鉀、氫氧化鈉、氫氧化銨等。前述 脫水縮合觸媒可為酸觸媒或可為鹼性觸媒,以鹼性觸媒為佳。在前述脫水縮合反應中,前述觸媒相對於前述矽化合物的添加量並無特別限制,例如相對於前述矽化合物1莫耳,觸媒為0.1~10莫耳、0.05~7莫耳、0.1~5莫耳。 The gelation of the silicon compound can be performed by, for example, a dehydration condensation reaction between the silicon compounds. The dehydration condensation reaction is preferably carried out in the presence of a catalyst, for example, the dehydration condensation catalyst such as an acid catalyst and an alkaline catalyst, the acid catalyst includes hydrochloric acid, oxalic acid, sulfuric acid, etc., the alkaline catalyst There are ammonia, potassium hydroxide, sodium hydroxide, ammonium hydroxide and so on. Aforementioned The dehydration condensation catalyst may be an acid catalyst or may be an alkaline catalyst, preferably an alkaline catalyst. In the dehydration condensation reaction, the amount of the catalyst added to the silicon compound is not particularly limited. For example, the catalyst is 0.1 to 10 moles, 0.05 to 7 moles, and 0.1 to 1 mole of the silicon compound. 5 moles.
前述矽化合物之凝膠化例如宜在溶劑中進行。前述矽化合物在前述溶劑中的比例並無特別限制。前述溶劑可舉如二甲亞碸(DMSO)、N-甲基吡咯啶酮(NMP)、N,N-二甲基乙醯胺(DMAc)、二甲基甲醯胺(DMF)、γ-丁內酯(GBL)、乙腈(MeCN)、乙二醇乙基醚(EGEE)等。前述溶劑例如可為1種亦可將2種以上併用。於前述凝膠化使用的溶劑以下亦稱作「凝膠化用溶劑」。 The gelation of the aforementioned silicon compound is preferably carried out in a solvent, for example. The ratio of the aforementioned silicon compound in the aforementioned solvent is not particularly limited. Examples of the foregoing solvents include dimethylsulfoxide (DMSO), N-methylpyrrolidone (NMP), N,N-dimethylacetamide (DMAc), dimethylformamide (DMF), and γ- Butyrolactone (GBL), acetonitrile (MeCN), ethylene glycol ethyl ether (EGEE), etc. The aforementioned solvent may be, for example, one kind or a combination of two or more kinds. The solvent used for the aforementioned gelation is hereinafter also referred to as "a solvent for gelation".
前述凝膠化之條件並無特別限制。相對於含有前述矽化合物之前述溶劑的處理溫度例如為20~30℃、22~28℃、24~26℃,處理時間例如為1~60分、5~40分、10~30分。進行前述脫水縮合反應時,其處理條件並無特別限制,可沿用該等示例。藉由進行前述凝膠化,例如可使矽氧烷鍵成長形成前述矽化合物的一次粒子,再隨著反應進展使前述一次粒子彼此連接成串珠狀而生成三維結構的凝膠。 The conditions for the aforementioned gelation are not particularly limited. The processing temperature of the solvent containing the silicon compound is, for example, 20 to 30°C, 22 to 28°C, and 24 to 26°C, and the processing time is, for example, 1 to 60 minutes, 5 to 40 minutes, and 10 to 30 minutes. When the aforementioned dehydration condensation reaction is performed, the processing conditions are not particularly limited, and the examples can be used. By performing the gelation, for example, the primary particles of the silicon compound can be grown by a siloxane bond, and then the primary particles are connected to each other in a bead shape as the reaction progresses to generate a three-dimensional gel.
在前述凝膠化步驟中獲得的前述凝膠狀矽化合物之凝膠形態並無特別限制。「凝膠」一般係指溶質具有因相互作用失去獨立的運動性集合而成的結構,且呈現固化狀態。另外,在凝膠中一般又以濕凝膠指含有分散介質且在分散介質中溶質採一樣的結構者,乾凝膠則指去除溶劑 且溶質採具有空隙之網目結構者。在本發明中,前述凝膠狀矽化合物宜使用例如濕凝膠。前述凝膠狀矽化合物的矽烷醇基殘量並無特別限制,例如可同樣示例後述之範圍。 The gel form of the gel-like silicon compound obtained in the gelation step is not particularly limited. "Gel" generally refers to a structure in which a solute has lost its independent mobility due to interaction and is in a solidified state. In addition, in the gel, the wet gel refers to the one containing the dispersion medium and the solute in the dispersion medium has the same structure, and the xerogel refers to the removal of the solvent. And the solute adopts the mesh structure with voids. In the present invention, the gel-like silicon compound is preferably a wet gel, for example. The residual amount of the silanol group of the gel-like silicon compound is not particularly limited, and for example, the range described below can be similarly exemplified.
藉由前述凝膠化製得之前述凝膠狀矽化合物例如亦可直接供予前述粉碎步驟,或可於前述粉碎步驟前在前述熟成步驟中施行熟成處理。在前述熟成步驟中,前述熟成處理之條件並無特別限制,例如在溶劑中在預定溫度下培養前述凝膠狀矽化合物即可。藉由前述熟成處理,例如針對具有以凝膠化獲得之三維結構的凝膠狀矽化合物可讓前述一次粒子進一步成長,藉此便可加大前述粒子本身的大小。而且,結果可令前述粒子彼此相互接觸之頸部的接觸狀態例如從點接觸擴展到面接觸。經過如上述熟成處理的凝膠狀矽化合物則例如會增加凝膠本身的強度,結果可進一步提升粉碎後之前述粉碎物的三維基本結構之強度。藉此,使用前述本發明之塗料形成塗覆膜時,例如即使在塗覆後的乾燥步驟中依舊可抑制前述三維基本結構堆積而成的空隙結構之細孔大小在前述乾燥步驟中隨著前述塗覆膜中之溶劑發生揮發而收縮的現象。 The gel-like silicon compound produced by the gelation may be directly supplied to the pulverization step, for example, or may be subjected to a aging process in the aging step before the pulverization step. In the aging step, the conditions of the aging process are not particularly limited, for example, the gel-like silicon compound may be cultured in a solvent at a predetermined temperature. Through the aforementioned aging process, for example, for a gel-like silicon compound having a three-dimensional structure obtained by gelation, the primary particles can be further grown, thereby increasing the size of the particles themselves. Moreover, as a result, the contact state of the neck where the aforementioned particles are in contact with each other can be expanded from point contact to surface contact, for example. The gel-like silicon compound subjected to the aging process as described above, for example, increases the strength of the gel itself, and as a result, the strength of the three-dimensional basic structure of the crushed product after crushing can be further improved. Thus, when the coating film of the present invention is used to form a coating film, for example, the pore size of the void structure formed by the accumulation of the three-dimensional basic structure can be suppressed even in the drying step after coating. The solvent in the coating film evaporates and shrinks.
前述熟成處理的溫度中,其下限例如為30℃以上、35℃以上、40℃以上,其上限例如為80℃以下、75℃以下、70℃以下,其範圍則例如為30~80℃、35~75℃、40~70℃。前述預定時間無特別限制,其下限例如為5小時以上、10小時以上、15小時以上,其上限例如為50小時以下、40小時以下、30小時以下,其範圍則例如為5~50小時、 10~40小時、15~30小時。此外,熟成的最佳條件例如前述般,宜設定為可獲得前述凝膠狀矽化合物之前述一次粒子的大小增大及前述頸部的接觸面積增大之條件。又,在前述熟成步驟中,前述熟成處理之溫度宜考量例如使用之溶劑的沸點。前述熟成處理例如在熟成溫度過高時,前述溶劑可能會過度揮發,而發生三維空隙結構的細孔因前述塗覆液之濃縮而閉口等不良狀況。另一方面,前述熟成處理例如在熟成溫度過低時,不僅無法充分獲得前述熟成的效果,量產製程的歷時溫度波動還會增大,進而可能製出品質不良的製品。 Among the temperatures of the aforementioned aging treatment, the lower limit is, for example, 30°C or higher, 35°C or higher, and 40°C or higher, the upper limit is, for example, 80°C or lower, 75°C or lower, 70°C or lower, and the range is, for example, 30 to 80°C or 35 ~75℃, 40~70℃. The aforementioned predetermined time is not particularly limited, and its lower limit is, for example, 5 hours or more, 10 hours or more, and 15 hours or more, its upper limit is, for example, 50 hours or less, 40 hours or less, 30 hours or less, and its range is, for example, 5 to 50 hours, 10~40 hours, 15~30 hours. In addition, the optimal conditions for aging are as described above, and it is desirable to set the conditions for obtaining an increase in the size of the primary particles of the gel-like silicon compound and an increase in the contact area of the neck. In addition, in the aforementioned aging step, the temperature of the aforementioned aging treatment should preferably take into consideration, for example, the boiling point of the solvent used. In the aging process, for example, when the aging temperature is too high, the solvent may be excessively volatilized, so that the pores of the three-dimensional void structure may be closed due to the concentration of the coating liquid and closed. On the other hand, when the ripening temperature is too low, for example, not only the aforementioned ripening effect cannot be sufficiently obtained, but also the temperature fluctuations over time in the mass production process will increase, which may result in products with poor quality.
前述熟成處理例如可使用與前述凝膠化步驟相同的溶劑,具體上對前述凝膠處理後的反應物(亦即,含有前述凝膠狀矽之前述溶劑)直接實施為宜。結束凝膠化後之熟成處理的前述凝膠狀矽化合物中所含的殘留矽烷醇基莫耳數,係例如令於凝膠化時使用的原材料(例如前述矽化合物或其前驅物)之烷氧基莫耳數為100時的殘留矽烷醇基之所佔比率,其下限例如為1%以下、3%以下、5%以下,其上限例如為50%以上、40%以上、30%以上,其範圍則例如為1~50%、3~40%、5~30%。在提高凝膠狀矽化合物之硬度的目的下,例如殘留矽烷醇基之莫耳數愈低愈宜。殘留矽烷醇基之莫耳數過高時,例如在形成前述聚矽氧多孔體當中可能無法保持空隙結構直到前述聚矽氧多孔體之前驅物進行交聯為止。另一方面,殘留矽烷醇基之莫耳數過低時,例如在前述結合步驟中前述聚矽氧多孔體之前驅物 可能無法進行交聯,進而無法賦予充分的膜強度。另外,上述係以殘留矽烷醇基為例,另外例如在使用以各種反應性官能基將前述矽化合物予以修飾者作為前述凝膠狀矽化合物之原材料時,同樣的現象亦可適用在各官能基上。 For the aging treatment, for example, the same solvent as the gelation step can be used, and specifically, the reactant after the gel treatment (that is, the solvent containing the gel-like silicon) is preferably directly applied. The number of residual silanol groups contained in the gel-like silicon compound after the completion of gelation is, for example, alkane used as a raw material (such as the aforementioned silicon compound or its precursor) used in gelation The ratio of the residual silanol groups when the number of oxygen moles is 100 has a lower limit of, for example, 1% or less, 3% or less, and 5% or less, and an upper limit of, for example, 50% or more, 40% or more, and 30% or more, The range is, for example, 1-50%, 3-40%, and 5-30%. For the purpose of increasing the hardness of the gel-like silicon compound, for example, the lower the molar number of the remaining silanol group, the better. When the mole number of the remaining silanol groups is too high, for example, in forming the polysiloxane porous body, the void structure may not be maintained until the precursor before the polysiloxane porous body is crosslinked. On the other hand, when the mole number of residual silanol groups is too low, for example, the precursor of the polysiloxane porous body in the bonding step It may not be possible to perform cross-linking, and thus sufficient film strength cannot be imparted. In addition, the above description uses the residual silanol group as an example. In addition, for example, when a silicon compound modified with various reactive functional groups is used as the raw material of the gel-like silicon compound, the same phenomenon can be applied to each functional group. on.
在本發明中,前述粉碎步驟如前述係用以粉碎前述凝膠狀矽氧化合物之步驟。前述粉碎例如可對前述凝膠化步驟後之前述凝膠狀矽化合物(第1塗料原料)施行,更可對已施行前述熟成處理之前述熟成後的凝膠狀矽化合物(第2塗料原料)施行。 In the present invention, the aforementioned pulverization step is the step for pulverizing the gel-like silicone compound as described above. The pulverization may be performed, for example, on the gel-like silicon compound (first coating material) after the gelation step, and may also be performed on the mature gel-like silicon compound (second coating material) that has been subjected to the aging process. Implementation.
前述粉碎例如可對前述凝膠化用溶劑中之凝膠狀矽化合物直接施行粉碎處理,或可將前述凝膠化用溶劑改成其它溶劑後,對前述其它的溶劑中之凝膠狀矽化合物施行粉碎處理。另外,對前述凝膠狀矽化合物施行前述熟成步驟時,在下述情況下宜改成其它溶劑,例如:在凝膠化步驟中所使用的觸媒及溶劑也殘存到前述熟成步驟以後,進而產生歷時凝膠化,影響最終獲得之塗料的適用期,或是在使用前述塗料所形成之塗覆膜進行乾燥時造成乾燥效率降低等。前述其它溶劑以下亦稱「粉碎用溶劑」。 The pulverization may, for example, directly pulverize the gelatinous silicon compound in the solvent for gelation, or may change the solvent for gelation to another solvent, and then the gelatinous silicon compound in the other solvent Perform crushing treatment. In addition, when the maturation step is performed on the gel-like silicon compound, it should be changed to another solvent in the following cases. For example, the catalyst and solvent used in the gelation step also remain after the maturation step, and then produce Gelation over time affects the pot life of the paint finally obtained, or causes a decrease in drying efficiency when the coating film formed using the aforementioned paint is dried. The aforementioned other solvents are also referred to as "pulverizing solvents" hereinafter.
前述粉碎例如可使用與前述凝膠化步驟及前述熟成步驟相同的溶劑,亦可使用與前述凝膠化步驟及前述熟成步驟不同的溶劑。在前者的情況下,例如可對前述凝膠化步驟後之反應物(例如含有前述凝膠狀矽化合物之前述凝膠化用溶劑)直接施行前述熟成步驟及前述粉碎處理。另外,在後者的情況下,可對前述凝膠化步驟後之反 應物(例如含有前述凝膠狀矽化合物之前述凝膠化用溶劑)直接施行前述熟成步驟後,將前述凝膠化用溶劑改成其它溶劑後再對前述其它溶劑中的凝膠狀矽化合物施行粉碎處理。 For the pulverization, for example, the same solvent as the gelation step and the aging step may be used, or a solvent different from the gelation step and the aging step may be used. In the former case, for example, the aging step and the pulverization treatment may be directly performed on the reactant after the gelation step (for example, the gelation solvent containing the gel-like silicon compound). In addition, in the latter case, the reverse After applying the aging step directly to the application (for example, the gelling solvent containing the gelatinous silicon compound), change the gelation solvent to another solvent, and then apply the gelatinous silicon compound in the other solvent. Perform crushing treatment.
前述粉碎用溶劑無特別限制,例如可使用有機溶劑。前述有機溶劑可舉如沸點130℃以下、沸點100℃以下、沸點85℃以下之溶劑。就具體例而言,可舉如異丙醇(IPA)、乙醇、甲醇、丁醇、丙二醇單甲基醚(PGME)、甲賽璐蘇、丙酮、二甲基甲醯胺(DMF)等。前述粉碎用溶劑例如可為1種亦可為2種以上之併用。 The solvent for pulverization is not particularly limited, and for example, an organic solvent can be used. Examples of the organic solvent include solvents having a boiling point of 130°C or lower, a boiling point of 100°C or lower, and a boiling point of 85°C or lower. Specific examples include isopropyl alcohol (IPA), ethanol, methanol, butanol, propylene glycol monomethyl ether (PGME), methylcellulose, acetone, and dimethylformamide (DMF). The aforementioned pulverizing solvent may be used alone or in combination of two or more.
前述凝膠化用溶劑與前述粉碎用溶劑之組合無特別限制,可舉如DMSO與IPA之組合、DMSO與乙醇之組合、DMSO與甲醇之組合、DMSO與丁醇之組合等。如此一來,藉由將前述凝膠化用溶劑取代成前述粉碎用溶劑,例如可在後述之塗膜形成中形成較均一的塗覆膜。 The combination of the solvent for gelation and the solvent for pulverization is not particularly limited, and examples thereof include a combination of DMSO and IPA, a combination of DMSO and ethanol, a combination of DMSO and methanol, and a combination of DMSO and butanol. In this way, by replacing the solvent for gelation with the solvent for pulverization, for example, a more uniform coating film can be formed in the coating film formation described later.
前述凝膠狀矽化合物之粉碎方法並無特別限制,例如可藉由以下裝置進行:超音波均質機、高速旋轉均質機、其它利用空蝕現象之粉碎裝置或是以高壓使液體彼此斜向衝擊之粉碎裝置等。球磨機等進行介質粉碎之裝置例如係在粉碎時以物理方式破壞凝膠之空隙結構,相對地,均質機等本發明偏好的空蝕方式粉碎裝置則為無介質方式,因此係以高速的剪切力將早已內包在凝膠三維結構中之結合較弱的二氧化矽粒子接合面予以剝離。如此一來,藉由粉碎前述凝膠狀矽化合物可獲得全新的溶膠三維結構, 前述三維結構例如在形成塗覆膜期間可保持具有一定範圍之粒度分布的空隙結構,可在塗覆‧乾燥時藉由堆積再次形成空隙結構。前述粉碎條件無特別限制,例如宜藉由瞬間賦予高速的流動,以不使溶劑揮發的方式將凝膠粉碎。例如,宜以成為如前述之粒度偏差(例如體積平均粒徑或粒度分布)的粉碎物之方式進行粉碎。假設當粉碎時間‧強度等工作量不夠時,可能不僅有粗粒殘留而無法形成緻密的細孔,還可能會增加外觀缺點,進而無法獲得高品質。另一方面,當前述工作量過多時,例如可能會形成比期望的粒度分布更微細的溶膠粒子,使塗覆‧乾燥後堆積而成的空隙大小變微細,進而無法滿足期望的空隙率。 The crushing method of the aforementioned gel-like silicon compound is not particularly limited, for example, it can be performed by the following devices: ultrasonic homogenizer, high-speed rotating homogenizer, other crushing devices using cavitation erosion, or oblique impact of liquids with high pressure The crushing device, etc. For example, a device such as a ball mill that pulverizes the medium physically destroys the void structure of the gel during pulverization. In contrast, the cavitation erosion pulverizing device preferred by the present invention such as a homogenizer is a medium-free method, so it is sheared at high speed. It is necessary to peel off the bonding surface of the weakly bonded silica particles that have been encapsulated in the three-dimensional structure of the gel. In this way, a completely new three-dimensional structure of sol can be obtained by crushing the aforementioned gel-like silicon compound, For example, the aforementioned three-dimensional structure can maintain a void structure with a certain range of particle size distribution during the formation of the coating film, and the void structure can be formed again by stacking during coating and drying. The above-mentioned pulverization conditions are not particularly limited. For example, it is preferable to pulverize the gel in such a manner that the high-speed flow is imparted instantaneously without evaporating the solvent. For example, it is preferable to perform pulverization so as to become a pulverized product having a particle size deviation (for example, volume average particle size or particle size distribution) as described above. It is assumed that when the amount of work such as crushing time and strength is insufficient, not only may coarse particles remain and dense pores may not be formed, but also appearance defects may increase, and high quality may not be obtained. On the other hand, when the aforementioned workload is excessive, for example, sol particles that are finer than the desired particle size distribution may be formed, so that the pore size accumulated after coating and drying becomes finer, and the desired porosity cannot be satisfied.
前述粉碎步驟後,前述粉碎物中所含殘留矽烷醇基之比例並無特別限制,例如可與前述熟成處理後之凝膠狀矽化合物所示例之範圍相同。 After the above-mentioned pulverization step, the ratio of residual silanol groups contained in the pulverized material is not particularly limited. For example, it may be in the same range as exemplified in the gel-like silicon compound after the aging treatment.
前述粉碎步驟後,含有前述粉碎物之前述溶劑的前述粉碎物比例並無特別限制,例如可示例前言所提前述本發明之塗料的相關條件。前述比例例如可為前述粉碎步驟後含有前述粉碎物之溶劑本身的條件,亦可為前述粉碎步驟後在作為前述塗料使用前予以調整過的條件。 After the pulverization step, the proportion of the pulverized material of the solvent containing the pulverized material is not particularly limited. For example, the relevant conditions of the coating of the present invention mentioned in the introduction can be exemplified. The ratio may be, for example, the condition of the solvent itself containing the pulverized product after the pulverization step, or the condition adjusted after the pulverization step before being used as the coating material.
本發明之塗料如同前述,可使用前述第1塗料原料或前述第2塗料原料來製造。前述第1塗料原料如前述含有凝膠狀矽化合物,且該凝膠狀矽化合物係由至少含有3官能以下之飽和鍵官能基的矽化合物製得。前述第1塗料原料之製造方法例如包含凝膠化步驟,其係使前述矽化合物在 溶劑中凝膠化而生成凝膠狀矽化合物,例如可沿用前言所提之前述凝膠化步驟後之前述凝膠狀矽化合物的記載。前述第2塗料原料如前述含有凝膠狀矽化合物,且該凝膠狀矽化合物係由至少含有3官能以下之飽和鍵官能基的矽化合物製得之凝膠狀物且已施行熟成處理。前述第2塗料原料之製造方法例如包含熟成步驟,其係使由前述矽化合物製得之凝膠狀矽化合物在溶劑中熟成,例如可沿用前言所提之前述熟成步驟後之前述凝膠狀矽化合物的記載。 The coating material of the present invention can be produced using the first coating material or the second coating material as described above. The first coating material contains the gel-like silicon compound as described above, and the gel-like silicon compound is made of a silicon compound containing at least 3 functional groups or less saturated bond functional groups. The manufacturing method of the first coating material includes, for example, a gelation step, which is to make the silicon compound in The gel-like silicon compound is gelated in the solvent, for example, the description of the gel-like silicon compound after the gelation step mentioned in the introduction can be used. The second coating raw material contains the gel-like silicon compound as described above, and the gel-like silicon compound is a gel-like substance made of a silicon compound containing at least a saturated bond functional group of at least 3 functions and has undergone aging treatment. The manufacturing method of the second coating raw material includes, for example, a aging step, which is to ripen the gel-like silicon compound prepared from the silicon compound in a solvent, for example, the gel-like silicon after the aging step mentioned in the introduction can be used Description of the compound.
如以上方式可製作本發明之塗料,其含有凝膠狀矽化合物之粉碎物及分散介質。此外,亦可於本發明之塗料添加可在前述各製作步驟中或其後令前述粉碎物彼此行化學結合的觸媒。前述觸媒之添加量並無特別限定,相對於前述凝膠狀矽化合物之粉碎物的重量,例如為0.01~20重量%、0.05~10重量%或0.1~5重量%。藉由該觸媒,例如後述之結合步驟中可使前述粉碎物彼此行化學結合。前述觸媒亦可為例如用以促進前述粉碎物彼此交聯結合的觸媒。使前述粉碎物彼此行化學結合之化學反應宜利用二氧化矽溶膠分子中所含殘留矽烷醇基的脫水縮合反應。藉由前述觸媒促進矽烷醇基之羥基彼此的反應,可做到在短時間內使空隙結構硬化的連續成膜。前述觸媒可舉如光活性觸媒及熱活性觸媒。藉由前述光活性觸媒,例如不用加熱就可讓前述粉碎物彼此行化學結合(例如交聯結合)。藉此,就不容易因加熱產生收縮,所以可維持較高的空隙率。另外,除了前述觸媒以外,亦可使用可產生觸媒之物質(觸媒 產生劑)或取而代之。例如,亦可為前述觸媒是交聯反應促進劑,而前述觸媒產生劑是產生前述交聯反應促進劑的物質。例如,除了前述光活性觸媒以外,亦可使用藉由光產生觸媒之物質(光觸媒產生劑)或取而代之;或是除了前述熱活性觸媒以外,可使用藉由熱產生觸媒之物質(熱觸媒產生劑)或取而代之。前述光觸媒產生劑並無特別限定,可舉如光鹼產生劑(藉由光照射產生鹼性觸媒之觸媒)、光酸產生劑(藉由光照射產生酸性觸媒之物質)等,且以光鹼劑為佳。前述光鹼產生劑可舉如:9-蒽基甲基N,N-二乙基胺甲酸酯(9-anthrylmethyl N,N-diethylcarbamate、商品名WPBG-018)、(E)-1-[3-(2-羥苯基)-2-丙烯醯基]哌啶((E)-1-[3-(2-hydroxyphenyl)-2-propenoyl]piperidine、商品名WPBG-027)、1-(蒽醌-2-基)乙基咪唑羧酸酯(1-(anthraquinon-2-yl)ethyl imidazolecarboxylate、商品名WPBG-140)、2-硝苯基甲基4-甲基丙烯醯氧基哌啶-1-羧酸酯(商品名WPBG-165)、1,2-二異丙基-3-[雙(二甲胺基)亞甲基]鈲2-(3-苯甲醯苯基)丙酸酯(商品名WPBG-266)、1,2-二環己基-4,4,5,5-四甲基雙鈲正丁基三苯基硼酸酯(商品名WPBG-300)、及2-(9-氧雜二苯并哌喃-2-基)丙酸1,5,7-三氮雜雙環[4.4.0]癸-5-烯(東京化成工業股份有限公司)、含4-哌啶甲醇之化合物(商品名HDPD-PB100:Heraeus公司製)等。另外,前述含有「WPBG」之商品名均為和光純藥工業股份有限公司之商品名。前述光酸產生劑可舉如芳香族鋶鹽(商品名SP-170:ADEKA公司)、三芳基鋶鹽(商品名 CPI101A:San-Apro Ltd.)、芳香族錪鹽(商品名Irgacure250:Ciba Japan K.K.)等。另外,使前述粉碎物彼此行化學結合之觸媒不限於前述光活性觸媒及前述光觸媒產生劑,亦可為例如熱活性觸媒或如脲等熱觸媒產生劑。使前述粉碎物彼此行化學結合之觸媒可舉如氫氧化鉀、氫氧化鈉、氫氧化銨等鹼性觸媒及鹽酸、乙酸、草酸等酸觸媒等。該等中又以鹼性觸媒為佳。使前述粉碎物彼此行化學結合之觸媒例如可在正要進行塗覆前才添加至含有前述粉碎物之溶膠粒子液(例如懸浮液)中作使用,或可作成已將前述觸媒混合至溶劑中之混合液來使用。前述混合液例如可為:直接添加溶解於前述溶膠粒子液的塗覆液、將前述觸媒溶解於溶劑的溶液、或將前述觸媒分散於溶劑的分散液。前述溶劑無特別限制,可舉如各種有機溶劑、水、緩衝液等。 In the above manner, the coating of the present invention can be produced, which contains the pulverized product of a gel-like silicon compound and a dispersion medium. In addition, a catalyst that can chemically bond the pulverized materials to each other in the aforementioned production steps or afterwards can also be added to the paint of the present invention. The amount of the catalyst added is not particularly limited, and it is, for example, 0.01 to 20% by weight, 0.05 to 10% by weight, or 0.1 to 5% by weight with respect to the weight of the pulverized product of the gel-like silicon compound. With this catalyst, for example, the aforementioned pulverized substances can be chemically bonded to each other in a bonding step described later. The catalyst may be, for example, a catalyst for promoting cross-linking and bonding of the pulverized products. The chemical reaction for chemically combining the aforementioned pulverized products with each other preferably utilizes the dehydration condensation reaction of residual silanol groups contained in the silica sol molecules. The aforementioned catalyst promotes the reaction between the hydroxyl groups of the silanol group, and can achieve continuous film formation in which the void structure is hardened in a short time. Examples of the aforementioned catalyst include photoactive catalysts and thermally active catalysts. With the photoactive catalyst, for example, the pulverized materials can be chemically bonded to each other (eg, cross-linked bonding) without heating. Thereby, it is not easy to shrink due to heating, so a high porosity can be maintained. In addition to the aforementioned catalysts, catalyst-producing substances (catalysts) Generator) or replace it. For example, the catalyst may be a crosslinking reaction accelerator, and the catalyst generator may generate the crosslinking reaction accelerator. For example, in addition to the aforementioned photoactive catalyst, a substance (photocatalyst generator) that generates a catalyst by light may be used or replaced; or in addition to the aforementioned thermally active catalyst, a substance that generates a catalyst by heat ( Thermal catalyst generator) or replace it. The aforementioned photocatalyst generator is not particularly limited, and examples thereof include photobase generators (catalysts that generate alkaline catalysts by light irradiation), photoacid generators (substances that generate acidic catalysts by light irradiation), and the like, and The photobase agent is preferred. Examples of the aforementioned photobase generator include: 9-anthrylmethyl N,N-diethylcarbamate (9-anthrylmethyl N,N-diethylcarbamate, trade name WPBG-018), (E)-1-[ 3-(2-hydroxyphenyl)-2-propenyl] piperidine ((E)-1-[3-(2-hydroxyphenyl)-2-propenoyl]piperidine, trade name WPBG-027), 1-( Anthraquinone-2-yl) ethyl imidazole carboxylate (1-(anthraquinon-2-yl) ethyl imidazole carboxylate, trade name WPBG-140), 2-nitrophenylmethyl 4-methacrylamide piperidine 1-Carboxylic acid ester (trade name WPBG-165), 1,2-diisopropyl-3-[bis(dimethylamino)methylene] 2-(3-benzoylphenyl)propan Ester (trade name WPBG-266), 1,2-dicyclohexyl-4,4,5,5-tetramethylbisguanidinium butyl triphenyl borate (trade name WPBG-300), and 2 -(9-oxadibenzopiperan-2-yl)propionic acid 1,5,7-triazabicyclo[4.4.0]dec-5-ene (Tokyo Chemical Industry Co., Ltd.), containing 4- Piperidine methanol compound (trade name HDPD-PB100: manufactured by Heraeus), etc. In addition, the aforementioned trade names containing "WPBG" are the trade names of Wako Pure Chemical Industries, Ltd. Examples of the aforementioned photoacid generators include aromatic osmium salts (trade name SP-170: ADEKA Corporation) and triaryl osmium salts (trade name) CPI101A: San-Apro Ltd.), aromatic tungsten salt (trade name Irgacure250: Ciba Japan K.K.), etc. In addition, the catalyst that chemically bonds the pulverized products with each other is not limited to the photoactive catalyst and the photocatalyst generating agent, and may be, for example, a thermally active catalyst or a thermal catalyst generating agent such as urea. Examples of catalysts that chemically bond the pulverized products to each other include alkaline catalysts such as potassium hydroxide, sodium hydroxide, and ammonium hydroxide, and acid catalysts such as hydrochloric acid, acetic acid, and oxalic acid. Among these, alkaline catalysts are preferred. The catalyst that chemically combines the pulverized products with each other can be added to the sol particle liquid (for example, suspension) containing the pulverized product just before coating, or it can be prepared that the catalyst has been mixed to Use a mixture of solvents. The mixed liquid may be, for example, a coating liquid directly added to the sol particle liquid, a solution in which the catalyst is dissolved in a solvent, or a dispersion liquid in which the catalyst is dispersed in a solvent. The aforementioned solvent is not particularly limited, and examples thereof include various organic solvents, water, and buffer solutions.
另外,例如更可於本發明之塗料添加用以使前述凝膠狀矽化合物之粉碎物彼此間接結合的交聯輔助劑。該交聯輔助劑可藉由進入粒子(前述粉碎物)彼此之間,利用粒子與交聯輔助劑各自的相互作用或結合,讓距離上稍顯分離的粒子彼此也得以結合,進而可有效地提升強度。前述交聯輔助劑以多交聯矽烷單體為佳。前述多交聯矽烷單體具體上具有例如2個以上且3個以下之烷氧矽基,且烷氧矽基間之鏈長可為碳數1以上且10以下,並可含有碳以外之元素。前述交聯輔助劑可舉如:雙(三甲氧矽基)乙烷、雙(三乙氧矽基)乙烷、雙(三甲氧矽基)甲烷、雙(三乙氧矽基)甲烷、雙(三乙氧矽基)丙烷、雙(三甲氧矽基)丙烷、雙(三乙氧
矽基)丁烷、雙(三甲氧矽基)丁烷、雙(三乙氧矽基)戊烷、雙(三甲氧矽基)戊烷、雙(三乙氧矽基)己烷、雙(三甲氧矽基)己烷、雙(三甲氧矽基)-N-丁基-N-丙基-乙烷-1,2-二胺、參-(3-三甲氧矽基丙基)三聚異氰酸酯、參-(3-三乙氧矽基丙基)三聚異氰酸酯等。該交聯輔助劑之添加量並無特別限定,例如相對於前述矽化合物之粉碎物的重量為0.01~20重量%、0.05~15重量%或0.1~10重量%。
In addition, for example, it is possible to add a crosslinking auxiliary agent to indirectly bond the pulverized substances of the gel-like silicon compound to the coating of the present invention. The cross-linking auxiliary agent can enter into the particles (the aforementioned crushed material), and use the interaction or combination of the particles and the cross-linking auxiliary agent, so that the particles that are slightly separated in distance can also be combined with each other, which can be effectively Increase strength. The aforementioned cross-linking auxiliary agent is preferably a multi-cross-linked silane monomer. The aforementioned multi-crosslinked silane monomer specifically has, for example, 2 or more and 3 or less alkoxysilyl groups, and the chain length between the alkoxysilyl groups may be
[2.塗料之使用方法] [2. How to use paint]
作為本發明之塗料的使用方法,以下係示例聚矽氧多孔體之製造方法,惟本發明不受此限。另外,使用本發明之塗料製造的聚矽氧多孔體以下有時會稱作「本發明之聚矽氧多孔體」。 As a method for using the paint of the present invention, the following is an example of a method for manufacturing a polysilicon porous body, but the present invention is not limited thereto. In addition, the polysiloxane porous body manufactured using the coating material of the present invention may be hereinafter referred to as "polysiloxane porous body of the present invention".
前述聚矽氧多孔體之製造方法的特徵在於例如包含:前驅物形成步驟,係使用前述本發明之塗料來形成前述聚矽氧多孔體之前驅物;及結合步驟,係使前述前驅物中所含前述塗料之前述粉碎物彼此行化學結合。前述前驅物例如亦可為塗覆膜。 The manufacturing method of the aforementioned polysiloxane porous body is characterized by, for example, comprising: a precursor forming step, which uses the coating of the present invention to form the polysiloxane porous body precursor; and a bonding step, which causes the precursor The aforementioned pulverized materials containing the aforementioned paint are chemically combined with each other. The aforementioned precursor may be, for example, a coating film.
依據前述聚矽氧多孔體之製造方法,可形成例如可發揮與空氣層同樣機能的多孔質結構。其理由推測如下,惟本發明不受此推測限制。 According to the aforementioned method for manufacturing a polysilicon porous body, a porous structure that can perform the same function as the air layer can be formed, for example. The reason is presumed as follows, but the present invention is not limited by this presumption.
在前述聚矽氧多孔體之製造方法中使用的前述本發明之塗料含有前述凝膠狀矽化合物之粉碎物,因此前述凝膠狀矽氧化合物的三維結構係呈現分散成三維基本結構的狀態。因此,在前述聚矽氧多孔體之製造方法中,例 如使用前述塗料形成前述前驅物(例如塗覆膜)時,前述三維基本結構便會堆積而形成以前述三維基本結構為主體的空隙結構。亦即,依據前述聚矽氧多孔體之製造方法可形成與前述凝膠狀矽化合物之三維結構截然不同且由前述三維基本結構之前述粉碎物形成的全新三維結構。此外,在前述聚矽氧多孔體之製造方法中,為了進一步使前述粉碎物彼此行化學結合,會將前述全新三維結構固定化。故而,依據前述聚矽氧多孔體之製造方法製得的前述聚矽氧多孔體雖為具有空隙之結構,依舊可維持充分的強度及可撓性。藉由本發明製得的聚矽氧多孔體例如可作為利用空隙之構件在廣泛領域之製品上作應用,如絕熱材、吸音材、光學構件、印墨影像接收層等,更可製作賦有各種機能的積層膜。 Since the coating material of the present invention used in the manufacturing method of the polysiloxane porous body contains the pulverized product of the gel-like silicon compound, the three-dimensional structure of the gel-like silicone compound is dispersed into a three-dimensional basic structure. Therefore, in the manufacturing method of the aforementioned polysilicon porous body, for example If the precursor is used to form the precursor (for example, a coating film), the three-dimensional basic structure is accumulated to form a void structure mainly composed of the three-dimensional basic structure. That is, a completely new three-dimensional structure formed by the pulverized product of the three-dimensional basic structure and completely different from the three-dimensional structure of the gel-like silicon compound can be formed according to the method of manufacturing the polysilicon porous body. In addition, in the method for manufacturing the polysilicon porous body, in order to further chemically combine the pulverized products, the new three-dimensional structure is fixed. Therefore, although the porous polysiloxane body manufactured according to the manufacturing method of the porous polysiloxane body has a structure with voids, it can still maintain sufficient strength and flexibility. The polysilicon porous body prepared by the present invention can be used as a member using voids for products in a wide range of fields, such as heat insulating materials, sound absorbing materials, optical members, and ink image receiving layers, etc., and can be manufactured with various functions. Laminated film.
前述聚矽氧多孔體之製造方法在未特別記述的前提下,可沿用前述本發明之塗料說明。 The above-mentioned method for manufacturing the polysilicon porous body can be described using the coating of the present invention unless otherwise specified.
在前述多孔體之前驅物的形成步驟中,例如將前述本發明之塗料塗覆於前述基材上。本發明之塗料例如可在塗覆於基材上並令前述塗覆膜乾燥後,藉由結合步驟令前述粉碎物彼此行化學結合(例如交聯),而連續成膜出具有一定程度以上之膜強度的空隙層。 In the step of forming the precursor of the porous body, for example, the coating material of the present invention is applied to the substrate. For example, the coating of the present invention can be applied to a substrate and the coating film is dried, and then the pulverized materials are chemically combined with each other (eg, cross-linked) through a bonding step, and the continuous film formation has a certain degree or more Vapour layer of membrane strength.
前述塗料相對於前述基材的塗覆量無特別限制,例如可因應期望的前述聚矽氧多孔體之厚度等適宜設定。就具體例而言,在形成厚度0.1~1000μm之前述聚矽氧多孔體時,前述塗料相對於前述基材的塗覆量在前述基材 之面積1m2中,例如前述粉碎物為0.01~60000μg、0.1~5000μg、1~50μg。前述塗料的理想塗覆量例如與液體濃度或塗覆方式等相關,因而難以作單一定義,若考慮生產性,則以盡可能塗以薄層為佳。塗佈量過多時,例如於溶劑揮發前在乾燥爐被乾燥的可能性會提高。藉此,奈米粉碎溶膠粒子在溶劑中沉降‧堆積而形成空隙結構之前,可能因溶劑乾燥而阻礙空隙形成,使空隙率大幅降低。另一方面,塗佈量太薄時,因基材之凹凸‧親疏水性偏差等產生塗覆收縮(cissing)的風險可能大增。 The coating amount of the coating material with respect to the substrate is not particularly limited, and for example, it can be appropriately set according to the desired thickness of the porous polysiloxane body. As a specific example, when forming the polysilicon porous body with a thickness of 0.1 to 1000 μm, the coating amount of the coating material with respect to the substrate is within an area of 1 m 2 of the substrate, for example, the pulverized product is 0.01 to 60,000 μg , 0.1~5000μg, 1~50μg. The ideal coating amount of the aforementioned coating is related to, for example, the liquid concentration or the coating method, so it is difficult to make a single definition. In consideration of productivity, it is better to apply a thin layer as much as possible. When the coating amount is too large, for example, the possibility of being dried in a drying furnace before the solvent volatilizes increases. In this way, before the nano-pulverized sol particles settle and accumulate in the solvent to form a void structure, the formation of void structure may be hindered by the drying of the solvent, which greatly reduces the void ratio. On the other hand, when the coating amount is too thin, the risk of coating cissing may be greatly increased due to unevenness of the substrate, deviation in hydrophilicity and hydrophobicity, and the like.
將前述塗料塗覆於前述基材上以後,可對前述多孔體之前驅體(塗覆膜)施行乾燥處理。藉由前述乾燥處理,目的不僅在去除前述多孔體之前驅體中的前述溶劑(前述塗料中所含溶劑),更在於乾燥處理中使溶膠粒子沉降‧堆積以形成空隙結構。前述乾燥處理之溫度例如為50~250℃、60~150℃、70~130℃,前述乾燥處理之時間例如為0.1~30分、0.2~10分、0.3~3分。關於乾燥處理溫度及時間,例如在連續生產性或顯現高空隙率的關連下,以較低溫度且較短時間為佳。條件若過度嚴苛,例如在基材為樹脂薄膜的情況下,接近前述基材之玻璃轉移溫度時,前述基材會在乾燥爐中伸展而可能於剛塗覆後就在已形成的空隙結構產生裂痕等缺點。另一方面,條件若太過寬鬆,例如因為在離開乾燥爐的時間點含有殘留溶劑,所以在下一步驟中與輥件摩擦時可能發生混入刮傷等外觀上的不良情況。 After the coating material is applied to the substrate, the precursor of the porous body (coating film) may be dried. The purpose of the drying process is not only to remove the solvent (the solvent contained in the paint) in the precursor of the porous body, but also to settle and accumulate sol particles during the drying process to form a void structure. The temperature of the drying process is, for example, 50 to 250°C, 60 to 150°C, and 70 to 130°C, and the time of the drying process is, for example, 0.1 to 30 minutes, 0.2 to 10 minutes, and 0.3 to 3 minutes. Regarding the drying treatment temperature and time, for example, in terms of continuous productivity or high porosity, lower temperature and shorter time are preferred. If the conditions are excessively severe, for example, when the substrate is a resin film, when the glass transition temperature of the substrate is approached, the substrate will stretch in the drying furnace and may have a void structure formed immediately after coating There are shortcomings such as cracks. On the other hand, if the condition is too loose, for example, because it contains residual solvent at the time of leaving the drying furnace, it may cause appearance defects such as mixing and scratching when rubbing with the roller in the next step.
前述乾燥處理例如可為自然乾燥,可為加熱乾燥,亦可為減壓乾燥。前述乾燥方法無特別限制,例如可使用一般的加熱機構。前述加熱機構可舉如熱風器、加熱輥、遠紅外線加熱器等。其中,在以工業上連續生產為前提下,宜使用加熱乾燥。又,關於可使用的溶劑,當目的為抑制乾燥時隨溶劑揮發而產生的收縮應力以及隨之而來的空隙層(前述聚矽氧多孔體)之裂痕現象時,以表面張力低的溶劑為佳。前述溶劑可舉如以異丙醇(IPA)為代表之低級醇、己烷、全氟己烷等,惟不受該等限定。又,例如亦可於上述IPA等添加少量的全氟系界面活性劑或矽系界面活性劑來降低表面張力。 The aforementioned drying treatment may be, for example, natural drying, heating drying, or reduced-pressure drying. The aforementioned drying method is not particularly limited, and for example, a general heating mechanism can be used. Examples of the heating mechanism include a hot air heater, a heating roller, and a far-infrared heater. Among them, heating and drying should be used on the premise of continuous industrial production. Regarding the usable solvents, when the purpose is to suppress the shrinkage stress caused by the solvent volatilization during drying and the subsequent cracking of the void layer (the aforementioned polysiloxane porous body), the solvent with low surface tension is used good. Examples of the aforementioned solvent include lower alcohols represented by isopropyl alcohol (IPA), hexane, and perfluorohexane, but are not limited thereto. In addition, for example, a small amount of perfluoro-based surfactant or silicon-based surfactant may be added to the IPA or the like to reduce the surface tension.
前述基材並無特別限制,例如適宜使用熱可塑性樹脂製基材、玻璃製基材、以矽為代表之無機基板、以熱硬化性樹脂等成形的塑膠、半導體等元件、以奈米碳管為代表之碳纖維系材料等,惟不受該等限定。前述基材之形態可舉如薄膜、薄板等。前述熱可塑性樹脂可舉如聚對苯二甲酸乙二酯(PET)、丙烯酸、乙酸丙酸纖維素(CAP)、環烯烴聚合物(COP)、三乙酸酯(TAC)、聚萘二甲酸乙二酯(PEN)、聚乙烯(PE)、聚丙烯(PP)等。 The aforementioned substrate is not particularly limited. For example, thermoplastic resin substrates, glass substrates, inorganic substrates represented by silicon, plastics and semiconductors molded with thermosetting resins, and carbon nanotubes are suitable. The representative carbon fiber materials are not subject to these restrictions. Examples of the shape of the aforementioned substrate include films and thin plates. Examples of the aforementioned thermoplastic resin include polyethylene terephthalate (PET), acrylic acid, cellulose acetate propionate (CAP), cycloolefin polymer (COP), triacetate (TAC), and polynaphthalene dicarboxylic acid. Ethylene glycol (PEN), polyethylene (PE), polypropylene (PP), etc.
在前述聚矽氧多孔體之製造方法中,前述結合步驟係用以使前述多孔體之前驅物(塗覆膜)中所含前述粉碎物彼此行化學結合的步驟。藉由前述結合步驟,例如可令前述粉碎物在前述多孔體之前驅物中的三維結構固定化。以習知之燒結進行固定化時,例如係以進行200℃以上之高 溫處理來激發矽烷醇基之脫水縮合而形成矽氧烷鍵結。在本發明之前述結合步驟中,例如當基材為樹脂薄膜時,藉由使催化上述脫水縮合反應之各種添加劑進行反應,既不會損傷前述基材,還可在100℃前後的較低乾燥溫度及僅數分鐘的短暫處理時間內連續形成並固定空隙結構。 In the method for manufacturing the polysilicon porous body, the bonding step is a step for chemically bonding the pulverized materials contained in the precursor (coating film) of the porous body. By the aforementioned bonding step, for example, the three-dimensional structure of the pulverized product in the precursor of the porous body can be fixed. When fixing by conventional sintering, for example, it is carried out at a temperature of 200°C or higher Warm treatment stimulates the dehydration condensation of silanol groups to form siloxane bonds. In the aforementioned bonding step of the present invention, for example, when the substrate is a resin film, by reacting various additives that catalyze the above-mentioned dehydration condensation reaction, the aforementioned substrate will not be damaged, and it can also be dried at a low temperature around 100°C. The temperature and the short processing time of only a few minutes continuously form and fix the void structure.
前述行化學結合之方法並無特別限制,例如可因應前述凝膠狀矽化合物之種類適宜決定。就具體例而言,前述化學結合例如可藉由前述粉碎物彼此的化學交聯結合來進行,其它像例如在前述粉碎物中添加有氧化鈦等無機粒子等時,亦可考慮使前述無機粒子與前述粉碎物行化學交聯結合。另外,在提供酵素等生物觸媒的情況下,亦有可能令有別於觸媒活性點的其它部位與前述粉碎物行化學交聯結合。因此,本發明不僅係像以前述溶膠粒子彼此形成的空隙層(聚矽氧多孔體),亦可擴展應用於有機無機混成空隙層、主客(host-guest)空隙層等,惟不受該等限定。 The method of chemical bonding is not particularly limited. For example, it can be appropriately determined according to the type of the gel-like silicon compound. As a specific example, the chemical bonding may be performed by chemical cross-linking between the pulverized products. For example, when inorganic particles such as titanium oxide are added to the pulverized product, the inorganic particles may also be considered. Chemical cross-linking with the aforementioned crushed material. In addition, in the case of providing biological catalysts such as enzymes, it is also possible to chemically cross-link and combine the other sites different from the active sites of the catalyst with the pulverized material. Therefore, the present invention is not only like a void layer (polysilicon porous body) formed by the aforementioned sol particles, but can also be extended to organic-inorganic hybrid void layers, host-guest void layers, etc. limited.
前述結合步驟例如可因應前述凝膠狀矽化合物之粉碎物的種類,利用觸媒存在下的化學反應進行。本發明之化學反應宜利用前述凝膠狀矽化合物之粉碎物中所含殘留矽烷醇基的脫水縮合反應。藉前述觸媒促進矽烷醇基之羥基彼此的反應,可做到在短時間內使空隙結構硬化的連續成膜。前述觸媒可舉如氫氧化鉀、氫氧化鈉、氫氧化銨等鹼性觸媒及鹽酸、乙酸、草酸等酸觸媒等,惟不受該等限定。前述脫水縮合反應之觸媒以鹼性觸媒尤佳。另外,亦適宜使用藉由光(例如紫外線)照射來顯現觸媒活性的光 酸產生觸媒、光鹼產生觸媒、光酸產生劑、光鹼產生劑等。光酸產生觸媒、光鹼產生觸媒、光酸產生劑及光鹼產生劑並無特別限定,如同前述。前述觸媒如同前述,宜於正要進行塗覆前才添加於含有前述粉碎物之溶膠粒子液中作使用,或宜作成已使前述觸媒混合於溶劑中之混合液來使用。前述混合液例如可為:直接添加溶解於前述溶膠粒子液的塗覆液、使前述觸媒溶解於溶劑的溶液、或使前述觸媒分散於溶劑的分散液。前述溶劑無特別限制,如同前述可舉如水、緩衝液等。 The aforementioned bonding step can be performed by a chemical reaction in the presence of a catalyst, for example, in accordance with the type of the pulverized product of the aforementioned gel-like silicon compound. The chemical reaction of the present invention preferably utilizes the dehydration condensation reaction of the residual silanol group contained in the pulverized product of the aforementioned gel-like silicon compound. The aforementioned catalyst promotes the reaction of the hydroxyl groups of the silanol groups with each other, so that the continuous film formation of the void structure can be hardened in a short time. Examples of the aforementioned catalyst include alkaline catalysts such as potassium hydroxide, sodium hydroxide, and ammonium hydroxide, and acid catalysts such as hydrochloric acid, acetic acid, and oxalic acid, but are not limited thereto. The catalyst for the aforementioned dehydration condensation reaction is preferably an alkaline catalyst. In addition, it is also suitable to use light that exhibits catalytic activity by irradiation with light (for example, ultraviolet rays) Acid generating catalyst, photobase generating catalyst, photoacid generator, photobase generator, etc. The photoacid generating catalyst, photobase generating catalyst, photoacid generating agent and photobase generating agent are not particularly limited, as described above. The aforementioned catalyst is as described above, and is preferably added to the sol particle liquid containing the pulverized material just before coating or used as a mixed solution in which the aforementioned catalyst is mixed in a solvent. The mixed liquid may be, for example, a coating liquid directly added to the sol particle liquid, a solution in which the catalyst is dissolved in a solvent, or a dispersion liquid in which the catalyst is dispersed in a solvent. The aforementioned solvent is not particularly limited, and as mentioned above, for example, water, buffer, etc. may be mentioned.
前述觸媒存在下的化學反應可藉由下述方式進行,例如:對含有前述觸媒的前述塗覆膜進行光照射或加熱且該前述觸媒已事先添加於前述塗料中;或對前述塗覆膜噴附前述觸媒後進行光照射或加熱;又或是在噴附前述觸媒的同時進行光照射或加熱。例如當前述觸媒為光活性觸媒時,藉由光照射可使前述粉碎物彼此化學結合而形成前述聚矽氧多孔體。又,當前述觸媒為熱活性觸媒時,藉由加熱可使前述粉碎物彼此化學結合而形成前述聚矽氧多孔體。前述光照射的光照射量(能量)並無特別限定,在@360nm換算下例如為200~800mJ/cm2、250~600mJ/cm2或300~400mJ/cm2。為了防止因為照射量不足使利用觸媒產生劑之光吸收的分解無法進展而效果不彰,以200mJ/cm2以上之累積光量為宜。另外,為了防止空隙層下之基材遭受損傷而產生熱皺褶的情況,以800mJ/cm2以下之累積光量為宜。前述加熱處理之條件無特別限制,前述加熱溫度例 如為50~250℃、60~150℃、70~130℃,前述加熱時間例如為0.1~30分、0.2~10分、0.3~3分。此外,關於可使用的溶劑,例如當目的為抑制乾燥時隨溶劑揮發而產生的收縮應力以及隨之而來的空隙層之裂痕現象時,以表面張力低的溶劑為佳。可舉如:以異丙醇(IPA)為代表的低級醇、己烷、全氟己烷等,惟不受該等限定。 The chemical reaction in the presence of the catalyst can be carried out by, for example, irradiating or heating the coating film containing the catalyst and the catalyst has been previously added to the coating; or the coating The film is irradiated with light or heated after spraying the catalyst; or it is irradiated with light or heated while spraying the catalyst. For example, when the catalyst is a photoactive catalyst, the pulverized materials can be chemically combined with each other by light irradiation to form the polysilicon porous body. In addition, when the catalyst is a thermally active catalyst, the pulverized materials can be chemically combined with each other by heating to form the polysilicon porous body. The light irradiation amount (energy) of the aforementioned light irradiation is not particularly limited, and it is, for example, 200 to 800 mJ/cm 2 , 250 to 600 mJ/cm 2, or 300 to 400 mJ/cm 2 in @360nm conversion. In order to prevent the decomposition of the light absorption by the catalyst generator from progressing due to insufficient irradiation amount and failing to achieve good results, a cumulative light amount of 200 mJ/cm 2 or more is suitable. In addition, in order to prevent the substrate under the void layer from being damaged and generating thermal wrinkles, the accumulated light amount of 800 mJ/cm 2 or less is suitable. The conditions of the heat treatment are not particularly limited. The heating temperature is, for example, 50 to 250°C, 60 to 150°C, and 70 to 130°C, and the heating time is, for example, 0.1 to 30 minutes, 0.2 to 10 minutes, and 0.3 to 3 minutes. In addition, as for the usable solvent, for example, when the purpose is to suppress shrinkage stress caused by the solvent volatilization during drying and subsequent cracking of the void layer, a solvent with low surface tension is preferred. Examples include: lower alcohols such as isopropyl alcohol (IPA), hexane, and perfluorohexane, but are not limited to these.
以上述方式可製造本發明之聚矽氧多孔體,惟本發明之製造方法不受此限定。 The polysilicon porous body of the present invention can be manufactured in the above manner, but the manufacturing method of the present invention is not limited thereto.
此外,亦可對製得之本發明之聚矽氧多孔體進行例如進行加熱熟化等處理以提升強度的強度提升步驟(以下有時亦稱「熟化步驟」)。例如,當樹脂薄膜上積層有本發明之聚矽氧多孔體時,藉由前述強度提升步驟(熟化步驟)可提升相對於前述樹脂薄膜的黏著剝離強度。在前述強度提升步驟(熟化步驟)中,例如亦可將本發明之聚矽氧多孔體加熱。前述熟化步驟之溫度例如為40~80℃、50~70℃、55~65℃。前述反應之時間則例如為5~30hr、7~25hr或10~20hr。在前述熟化步驟中,例如藉由將加熱溫度設為低溫可抑制前述聚矽氧多孔體收縮並同時提升黏著剝離強度,可達成高空隙率及強度的兼顧。 In addition, the obtained polysilicone porous body of the present invention may be subjected to a strength increasing step (for example, hereinafter referred to as a "curing step") such as heat curing to increase the strength. For example, when the polysilicon porous body of the present invention is laminated on a resin film, the adhesive peel strength with respect to the resin film can be increased by the aforementioned strength-raising step (aging step). In the aforementioned strength-raising step (mature step), for example, the polysiloxane porous body of the present invention may also be heated. The temperature of the aforementioned aging step is, for example, 40 to 80°C, 50 to 70°C, and 55 to 65°C. The aforementioned reaction time is, for example, 5 to 30 hr, 7 to 25 hr, or 10 to 20 hr. In the aging step, for example, by setting the heating temperature to a low temperature, the shrinkage of the polysiloxane porous body can be suppressed and the adhesive peel strength can be improved at the same time, achieving both high void ratio and strength.
在前述強度提升步驟(熟化步驟)中萌發的現象及機制不明,吾等認為係因為例如藉由本發明之聚矽氧多孔體中所含觸媒,使前述粉碎物彼此的化學結合(例如交聯反應)進一步發展而提升強度。就具體例而言,在前述聚矽氧多孔體中存有殘留矽烷醇基(OH基)時,係前述殘留矽烷 醇基彼此藉由交聯反應而進行化學結合。另外,本發明之聚矽氧多孔體中所含觸媒並無特別限定,例如可為前述結合步驟中所採用的觸媒,可為前述結合步驟中所採用之光鹼產生觸媒藉由光照射所產生的鹼性物質,或可為前述結合步驟中所採用之光酸產生觸媒藉由光照射所產生的酸性物質等。惟,此說明僅為示例,不限制本發明。 The phenomenon and mechanism of germination in the aforementioned strength-raising step (maturation step) are unknown, and we believe that it is because, for example, by the catalyst contained in the polysilicon porous body of the present invention, the aforementioned pulverized materials are chemically combined with each other (for example, cross-linking) Reaction) further development to increase strength. As a specific example, when there is a residual silanol group (OH group) in the polysiloxane porous body, it is the residual silane Alcohol groups chemically bond with each other through a cross-linking reaction. In addition, the catalyst contained in the polysilicon porous body of the present invention is not particularly limited. For example, it may be the catalyst used in the aforementioned bonding step, and may be the photobase generator used in the aforementioned bonding step. The alkaline substance generated by the irradiation may be an acid substance generated by light irradiation of the photoacid generating catalyst used in the aforementioned bonding step. However, this description is only an example and does not limit the present invention.
此外,亦可於本發明之聚矽氧多孔體上進一步形成黏接著層(黏接著層形成步驟)。具體上,例如亦可藉由於本發明之聚矽氧多孔體上塗佈(塗覆)黏著劑或接著劑而形成前述黏接著層。又,亦可將基材上積層有前述黏接著層之黏著膠帶等的前述黏接著層側貼合至本發明之聚矽氧多孔體上,藉此於本發明之聚矽氧多孔體上形成前述黏接著層。此時,前述黏著膠帶等之基材可維持在就此貼合的狀態下,亦可自前述黏接著層剝離。在本發明中,「黏著劑」及「黏著層」例如係指以被黏體之再剝離為前提之劑或層。本發明中,「接著劑」及「接著層」例如係指不以被黏體之再剝離為前提之劑或層。惟,本發明中,「黏著劑」及「接著劑」非可明確區別者,「黏著層」及「接著層」亦非可明確區別者。在本發明中,形成前述黏接著層之黏著劑或接著劑並無特別限定,例如可使用一般的黏著劑或接著劑等。前述黏著劑或接著劑可舉如丙烯酸系、乙烯醇系、聚矽氧系、聚酯系、聚胺甲酸乙酯系、聚醚系等聚合物製接著劑及橡膠系接著劑等。此外,亦可列舉由戊二醛、三聚氰胺、草酸等乙烯醇系聚合物之水溶性交聯劑等構成的接 著劑等。該等黏著劑及接著劑可僅使用1種,亦可將複數種類併用(例如混合、積層等)。前述黏接著層之厚度並無特別限制,例如為0.1~100μm、5~50μm、10~30μm或12~25μm。 In addition, an adhesive layer can also be further formed on the polysilicon porous body of the present invention (adhesive layer forming step). Specifically, for example, the adhesive layer may be formed by coating (coating) an adhesive or an adhesive on the polysilicon porous body of the present invention. In addition, the adhesive layer side of the adhesive tape and the like on which the adhesive layer is laminated on the base material may be attached to the polysilicon porous body of the present invention, thereby forming on the polysilicon porous body of the present invention The aforementioned adhesive layer. At this time, the base material such as the adhesive tape can be maintained in the state of being bonded thereon, and can also be peeled from the adhesive layer. In the present invention, "adhesive" and "adhesive layer" refer to, for example, an agent or layer that is premised on the re-peeling of the adherend. In the present invention, "adhesive" and "adhesive layer" mean, for example, an agent or layer that does not presuppose the re-peeling of the adherend. However, in the present invention, "adhesive" and "adhesive" are not clearly distinguishable, nor are "adhesive layer" and "adhesive layer". In the present invention, the adhesive or adhesive that forms the adhesive layer is not particularly limited, and for example, a general adhesive or adhesive can be used. Examples of the adhesive or the adhesive include acrylic-based, vinyl alcohol-based, polysiloxane-based, polyester-based, polyurethane-based, and polyether-based polymer adhesives and rubber-based adhesives. In addition, a water-soluble cross-linking agent composed of a vinyl alcohol polymer such as glutaraldehyde, melamine, oxalic acid, etc. The agent waits. Only one type of these adhesives and adhesives may be used, or plural types may be used in combination (eg, mixing, lamination, etc.). The thickness of the aforementioned adhesive layer is not particularly limited, for example, it is 0.1-100 μm, 5-50 μm, 10-30 μm, or 12-25 μm.
另外,亦可使本發明之聚矽氧多孔體與前述黏接著層發生反應而形成配置在本發明之聚矽氧多孔體與前述黏接著層之中間的中間層(中間層形成步驟)。藉由前述中間層,例如可使本發明之聚矽氧多孔體不容易與前述黏接著層剝離。其理由(機制)不明,推測係因為前述中間層之投錨性(投錨效果)所致。前述投錨性(投錨效果)係指在前述空隙層與前述中間層之界面附近,前述中間層呈現嵌入前述空隙層內部之結構,因而使前述界面被牢固固定的現象(效果)。惟,其理由(機制)僅為推測之理由(機制)一例,無法限定本發明。本發明之聚矽氧多孔體與前述黏接著層之反應亦無特別限定,例如可為藉由觸媒作用之反應。前述觸媒亦可為例如本發明之聚矽氧多孔體中所含的觸媒。具體上,例如可為前述結合步驟中所採用的觸媒,或可為前述結合步驟中所採用的光鹼產生觸媒藉由光照射所產生的鹼性物質,又或可為前述結合步驟中所採用的光酸產生觸媒藉由光照射所產生的酸性物質等。又,本發明之聚矽氧多孔體與前述黏接著層之反應例如可為可生成新的化學鍵之反應(例如交聯反應)。前述反應之溫度例如為40~80℃、50~70℃、55~65℃。前述反應之時間例如為5~30hr、7~25hr或10~20hr。又,該中間層形成步驟亦可兼作用以提升 本發明之聚矽氧多孔體強度的前述強度提升步驟(熟化步驟)。 In addition, the polysilicon porous body of the present invention can be reacted with the adhesive layer to form an intermediate layer disposed between the polysilicon porous body of the present invention and the adhesive layer (intermediate layer forming step). With the intermediate layer, for example, the polysilicon porous body of the present invention is not easily peeled off from the adhesive layer. The reason (mechanism) is unknown, presumably because of the anchoring property (anchoring effect) of the aforementioned intermediate layer. The anchoring property (anchoring effect) refers to a phenomenon (effect) in which the intermediate layer has a structure embedded in the void layer in the vicinity of the interface between the void layer and the intermediate layer, so that the interface is firmly fixed. However, the reason (mechanism) is only an example of speculative reason (mechanism), and the present invention cannot be limited. The reaction between the porous polysilicon body of the present invention and the aforementioned adhesive layer is not particularly limited, and may be, for example, a reaction by a catalyst. The aforementioned catalyst may be, for example, the catalyst contained in the polysilicon porous body of the present invention. Specifically, it may be, for example, the catalyst used in the aforementioned bonding step, or may be the alkaline substance generated by light irradiation of the photobase generating catalyst used in the aforementioned bonding step, or may be the aforementioned substance in the aforementioned bonding step The photoacid generation catalyst used is an acidic substance produced by light irradiation. In addition, the reaction between the porous polysilicon body of the present invention and the aforementioned adhesive layer may be, for example, a reaction that can generate a new chemical bond (for example, a cross-linking reaction). The temperature of the aforementioned reaction is, for example, 40 to 80°C, 50 to 70°C, and 55 to 65°C. The time of the aforementioned reaction is, for example, 5 to 30 hr, 7 to 25 hr, or 10 to 20 hr. In addition, the step of forming the intermediate layer can also serve to enhance The aforementioned strength improvement step (maturation step) of the strength of the polysilicon porous body of the present invention.
以上述方式製得之本發明之聚矽氧多孔體例如可進一步與其它薄膜(層)積層形成含有前述多孔質結構的積層結構體。此時,在前述積層結構體中,例如可藉由黏著劑或接著劑使各構成要素積層。 The polysilicon porous body of the present invention produced in the above-mentioned manner can be further laminated with other thin films (layers) to form a laminated structure containing the aforementioned porous structure. At this time, in the aforementioned laminated structure, for example, each constituent element may be laminated by an adhesive or an adhesive.
基於效率,前述各構成要素之積層例如可藉由使用長條薄膜的連續處理(所謂的輥對輥(Roll to Roll)等)進行積層,在基材為成形物‧元件等情況下亦可將業經分批處理者予以積層。 Based on efficiency, the lamination of each of the aforementioned constituent elements can be carried out by continuous processing using a long film (so-called roll to roll, etc.). When the substrate is a molded product or element, etc. Those who have been processed in batches will be stacked.
以下將針對採用前述本發明之塗料於基材上形成前述聚矽氧多孔體之方法,以圖1~3舉例說明。關於圖2係顯示在製造出前述聚矽氧多孔體後貼合保護薄膜並予以卷取之步驟,在對另一機能性薄膜進行積層時亦可採用上述手法,或可在塗覆另一機能性薄膜並予以乾燥後,於正要卷取前才貼合上述成膜後的前述聚矽氧多孔體。另外,圖示之製膜方式僅為一例,不受該等限定。 The method for forming the polysiloxane porous body on the substrate by using the coating material of the present invention will be described below with reference to FIGS. 1-3. Figure 2 shows the steps of attaching the protective film and winding it after manufacturing the aforementioned polysilicon porous body. The above method can also be used when laminating another functional film, or another function can be applied After the film is dried, the polysilicone porous body after the film formation is attached just before being wound up. In addition, the film-making method shown in the figure is only an example and is not limited by these.
於圖1之截面圖中示意顯示在前述基材上形成前述聚矽氧多孔體之方法的步驟一例。圖1中,前述聚矽氧多孔體之形成方法包含:塗覆步驟(1),係將前述本發明之塗料20”塗覆於基材10上;塗覆膜形成步驟(乾燥步驟)(2),係使塗料20”乾燥而形成塗覆膜20’,該塗覆膜20’為前述聚矽氧多孔體之前驅層;及化學處理步驟(例如交聯處理步驟)(3),係對塗覆膜20’進行化學處理(例如交聯處理)而形成
聚矽氧多孔體20。以此方式可如圖示,於基材10上形成聚矽氧多孔體20。另外,前述聚矽氧多孔體之形成方法可適宜包含或可不包含前述步驟(1)~(3)以外之步驟。
In the cross-sectional view of FIG. 1, an example of the steps of the method of forming the polysiloxane porous body on the substrate is schematically shown. In FIG. 1, the method for forming the polysilicon porous body includes: a coating step (1), which is to apply the
在前述塗覆步驟(1)中,塗料20”之塗覆方法並無特別限定,可採用一般的塗覆方法。前述塗覆方法可舉如狹縫式模塗(slot die)法、反向凹版塗佈(reverse gravure coat)法、微凹版(micro gravure)法(微凹版塗佈(micro gravure coat)法)、浸漬法(浸漬塗佈法)、旋塗法、刷塗法、輥塗法、柔版印刷法、線棒塗佈法、噴塗法、擠壓塗佈法、淋幕式塗佈法、反向塗佈法等。該等中,基於生產性、塗膜之平滑性等觀點,以擠壓塗佈法、淋幕式塗佈法、輥塗法、微凹版塗佈法等為佳。前述塗料20”之塗覆量並無特別限定,例如可以使多孔質結構(聚矽氧多孔體)20成為適當厚度的方式適宜設定。多孔質結構(聚矽氧多孔體)20之厚度並無特別限定,可如同前述。
In the foregoing coating step (1), the coating method of the
在前述乾燥步驟(2)中,將塗料20”乾燥(即去除塗料20”中所含分散介質)而形成塗覆膜(前驅層)20’。乾燥處理之條件並無特別限定,就如同前述。
In the aforementioned drying step (2), the
此外,在前述化學處理步驟(3)中,對塗覆前所添加之含有前述觸媒(例如,光活性觸媒或KOH等熱活性觸媒)的塗覆膜20’進行光照射或加熱,使塗覆膜(前驅物)20’中之前述粉碎物彼此行化學結合(例如進行交聯)而形成聚矽氧多孔體20。前述化學處理步驟(3)之光照射或加熱條件無特別限定,就如同前述。
In addition, in the aforementioned chemical treatment step (3), the coating film 20' containing the aforementioned catalyst (for example, a photoactive catalyst or a thermally active catalyst such as KOH) added before coating is subjected to light irradiation or heating, The aforementioned pulverized materials in the coating film (precursor) 20' are chemically bonded to each other (for example, cross-linked) to form the polysilicon
接著,於圖2示意顯示狹縫式模塗法之塗覆裝置及使用其之前述聚矽氧多孔體之形成方法一例。另外,圖2雖為截面圖,但為了易讀性省略了影線。 Next, FIG. 2 schematically shows an example of a slit die coating method coating apparatus and a method for forming the aforementioned polysilicon porous body. In addition, although FIG. 2 is a cross-sectional view, hatching is omitted for legibility.
如圖示,使用該裝置之方法的各步驟係藉由輥件將基材10朝一方向搬送的同時一邊進行。搬送速度無特別限定,例如為1~100m/分、3~50m/分、5~30m/分。
As shown in the figure, each step of the method of using the device is carried out while the
首先,從送出輥101旋出基材10的同時進行搬送,並在塗覆輥102進行塗覆步驟(1)後,接著在烘箱區110內移到乾燥步驟(2),前述塗覆步驟(1)係於基材10上塗覆本發明之塗料20”。在圖2之塗覆裝置中,塗覆步驟(1)後係在乾燥步驟(2)前先進行預乾燥步驟。預乾燥步驟可不經過加熱,在室溫下進行。在乾燥步驟(2)中會使用加熱機構111。加熱機構111如同前述,可適宜使用熱風器、加熱輥、遠紅外線加熱器等。還有,例如可將乾燥步驟(2)分成複數個步驟,令乾燥溫度隨著後續的乾燥步驟愈來愈高。
First, the
於乾燥步驟(2)後,在化學處理區120內進行化學處理步驟(3)。在化學處理步驟(3)中,例如當乾燥後之塗覆膜20’含有光活性觸媒時,係以配置在基材10上下的燈(光照射機構)121進行光照射。或者,例如在乾燥後之塗覆膜20’含有熱活性觸媒時,使用熱風器(加熱機構)取代燈(光照射裝置)121,以配置在基材10上下的熱風器121將基材10加熱。藉由此交聯處理,可引發塗覆膜20’中前述粉碎物彼此的化學結合,使聚矽氧多孔體20硬化‧強化。然後,於化學處理步驟(3)後藉由卷取輥105卷取基材10上形成有
聚矽氧多孔體20之積層體。另外,在圖2中,前述積層體之多孔質結構20係受由輥件106旋出的保護片被覆保護。在此,亦可使由長條薄膜形成的其它層代替前述保護片積層於多孔質結構20上。
After the drying step (2), the chemical treatment step (3) is performed in the
於圖3示意顯示微凹版法(微凹版塗佈法)之塗覆裝置及使用其之前述多孔質結構的形成方法一例。另外,同圖雖為截面圖,但為了易讀性省略了影線。 FIG. 3 schematically shows an example of a coating apparatus of a micro gravure method (micro gravure coating method) and a method for forming the aforementioned porous structure. In addition, although the figure is a cross-sectional view, hatching is omitted for legibility.
如圖示,使用該裝置之方法的各步驟與圖2同樣地係藉由輥件將基材10朝一方向搬送的同時一邊進行。搬送速度無特別限定,例如為1~100m/分、3~50m/分、5~30m/分。
As shown in the figure, each step of the method of using the device is carried out at the same time as the
首先,從送出輥201旋出基材10的同時進行搬送,施行塗覆步驟(1),其係在基材10上塗覆本發明之塗料20”。塗料20”之塗覆如圖示,係利用儲液區202、刮刀(doctor knife)203及微凹版204進行。具體上,使儲留在儲液區202中的塗料20”附著於微凹版204表面,再以刮刀203調控成預定厚度並同時以微凹版204塗覆於基材10表面。另外,微凹版204為示例,不受此限定,亦可使用其它的任意塗覆機構。
First, the
接下來進行乾燥步驟(2)。具體上,如圖示在烘箱區210中搬送已塗覆塗料20”之基材10並藉由烘箱區210內之加熱機構211加熱及乾燥。加熱機構211例如亦可與圖2相同。又,例如亦可藉由將烘箱區210分成複數個區塊,使乾燥步驟(2)分成複數個步驟,令乾燥溫度隨著後續的乾
燥步驟愈來愈高。於乾燥步驟(2)後,在化學處理區220內進行化學處理步驟(3)。在化學處理步驟(3)中,例如當乾燥後之塗覆膜20’含有光活性觸媒時,係以配置在基材10上下的燈(光照射機構)221進行光照射。或者,例如當乾燥後之塗覆膜20’含有熱活性觸媒時,會使用熱風器(加熱機構)來替代燈(光照射裝置)221,以配置在基材10下方的熱風器(加熱機構)221將基材10加熱。藉由該交聯處理,可激發塗覆膜20’中之前述粉碎物彼此的化學結合,形成聚矽氧多孔體20。
Next, the drying step (2) is performed. Specifically, as shown in the figure, the
然後,於化學處理步驟(3)後藉由卷取輥251卷取基材10上形成有聚矽氧多孔體20之積層體。其後,亦可於前述積層體上積層其它層。又,藉由卷取輥251卷取前述積層體之前,亦可於前述積層體積層其它層。
Then, after the chemical treatment step (3), the laminate having the polysilicon
另外,於圖4~6顯示形成本發明之聚矽氧多孔體之方法的連續處理步驟之另一例。如同圖4之截面圖顯示,此方法係於形成聚矽氧多孔體20之化學處理步驟(例如交聯處理步驟)(3)後進行強度提升步驟(熟化步驟)(4),除此以外與圖1~3顯示之方法相同。如圖4顯示,在強度提升步驟(熟化步驟)(4)中使聚矽氧多孔體20之強度提升,製出強度增強的聚矽氧多孔體21。強度提升步驟(熟化步驟)(4)並無特別限定,如同前言所述。
In addition, FIGS. 4 to 6 show another example of the continuous processing steps of the method for forming the polysilicon porous body of the present invention. As shown in the cross-sectional view of FIG. 4, this method is to perform the strength improvement step (maturation step) (4) after the chemical treatment step (for example, cross-linking treatment step) (3) to form the polysilicon
圖5係一示意圖,其顯示有別於圖2之狹縫式模塗法之塗覆裝置及使用其之前述聚矽氧多孔體之形成方法之另一例。如同圖示,該塗覆裝置於進行化學處理步驟(3)
之化學處理區120後緊接著具有進行強度提升步驟(熟化步驟)(4)的強度提升區(熟化區)130,除此以外與圖2之裝置相同。即,於化學處理步驟(3)後在強度提升區(熟化區)130內進行強度提升步驟(熟化步驟)(4),提升聚矽氧多孔體20相對於樹脂薄膜10的黏著剝離強度,而形成黏著剝離強度增強的聚矽氧多孔體21。強度提升步驟(熟化步驟)(4)例如亦可使用配置在基材10上下的熱風器(加熱機構)131,以前述方式將聚矽氧多孔體20加熱來進行。加熱溫度、時間等並無特別限定,如同前言所述。其後,與圖3同樣地藉由卷取輥105卷取在基材10上形成有聚矽氧多孔體21的積層膜。
FIG. 5 is a schematic diagram showing another example of a coating apparatus different from the slit die coating method of FIG. 2 and the aforementioned method of forming a polysilicon porous body using the same. As shown in the figure, the coating device performs the chemical treatment step (3)
The
圖6係一示意圖,其顯示有別於圖3之微凹版法(微凹版塗佈法)之塗覆裝置及使用其之前述多孔質結構之形成方法之另一例。如同圖示,該塗覆裝置於進行化學處理步驟(3)之化學處理區220後緊接著具有進行強度提升步驟(熟化步驟)(4)的強度提升區(熟化區)230,除此以外與圖3之裝置相同。即,於化學處理步驟(3)後在強度提升區(熟化區)230內進行強度提升步驟(熟化步驟)(4),提升聚矽氧多孔體20相對於樹脂薄膜10的黏著剝離強度,而形成黏著剝離強度增強的聚矽氧多孔體21。強度提升步驟(熟化步驟)(4)例如亦可使用配置在基材10上下的熱風器(加熱機構)231,以前述方式將聚矽氧多孔體20加熱來進行。加熱溫度、時間等並無特別限定,如同前言所述。其後,與圖3同樣地藉由卷取輥251卷取在基材10上形成有聚矽氧多孔
體21的積層膜。
6 is a schematic diagram showing another example of a coating apparatus different from the micro gravure method (micro gravure coating method) of FIG. 3 and the aforementioned porous structure forming method using the same. As shown in the figure, the coating device immediately after the
又,於圖7~9顯示形成本發明之聚矽氧多孔體之方法的連續處理步驟之另一例。如圖7之截面圖所示,此方法於形成聚矽氧多孔體20之化學處理步驟(例如交聯處理步驟)(3)後包含:於聚矽氧多孔體20上塗覆黏接著層30的黏接著層塗覆步驟(黏接著層形成步驟)(4)、及使聚矽氧多孔體20與黏接著層30起反應而形成中間層22的中間層形成步驟(5)。該等以外,圖7~9之方法與圖4~6顯示之方法相同。又,在圖7中,中間層形成步驟(5)兼作提升聚矽氧多孔體20之強度的步驟(強度提升步驟),於中間層形成步驟(5)以後聚矽氧多孔體20即晉身為強度增強的聚矽氧多孔體21。惟,本發明不受此限定,例如在中間層形成步驟(5)後聚矽氧多孔體20也可沒有變化。黏接著層塗覆步驟(黏接著層形成步驟)(4)及中間層形成步驟(5)並無特別限定,如同前言所述。
7 to 9 show another example of the continuous processing steps of the method for forming the polysilicon porous body of the present invention. As shown in the cross-sectional view of FIG. 7, after the chemical treatment step (for example, the cross-linking treatment step) (3) of forming the polysilicon
圖8係一示意圖,其顯示狹縫式模塗法之塗覆裝置及使用其之前述聚矽氧多孔體之形成方法的又另一例。如同圖示,該塗覆裝置於進行化學處理步驟(3)之化學處理區120後緊接著具有進行黏接著層塗覆步驟(4)之黏接著層塗覆區130a,除此以外與圖5之裝置相同。同圖中,緊接著配置在黏接著層塗覆區130a後方的中間層形成區(熟化區)130可藉由配置在基材10上下的熱風器(加熱機構)131,進行與圖5之強度提升區(熟化區)130同樣的加熱處理。即,圖8之裝置中係於化學處理步驟(3)後進行黏接著層塗
覆步驟(黏接著層形成步驟)(4),即,在黏接著層塗覆區130a內藉由黏接著層塗覆機構131a於聚矽氧多孔體20上塗佈(塗覆)黏著劑或接著劑,而形成黏接著層30。又,如同前述,亦可以具有黏接著層30之黏著膠帶等的貼合(貼附),來替代黏著劑或接著劑之塗佈(塗覆)。再來,在中間層形成區(熟化區)130內進行中間層形成步驟(熟化步驟)(5),使聚矽氧多孔體20與黏接著層30起反應而形成中間層22。又,如同前述,在此步驟中聚矽氧多孔體20會成為強度增強的聚矽氧多孔體21。利用熱風器(加熱機構)131的加熱溫度、時間等並無特別限定,如同前言所述。
FIG. 8 is a schematic diagram showing yet another example of a slit die coating method coating device and a method for forming the aforementioned polysiloxane porous body using the same. As shown in the figure, the coating device has the adhesive
圖9係一示意圖,其顯示微凹版法(微凹版塗佈法)之塗覆裝置及使用其之前述多孔質結構之形成方法的又另一例。如同圖示,該塗覆裝置在進行化學處理步驟(3)之化學處理區220後緊接著具有進行黏接著層塗覆步驟(4)之黏接著層塗覆區230a,除此以外與圖6之裝置相同。同圖中,緊接著配置在黏接著層塗覆區230a後方的中間層形成區(熟化區)230可藉由配置在基材10上下的熱風器(加熱機構)231,進行與圖6之強度提升區(熟化區)230同樣的加熱處理。即,圖9之裝置中係於化學處理步驟(3)後進行黏接著層塗覆步驟(黏接著層形成步驟)(4),即,在黏接著層塗覆區230a內藉由黏接著層塗覆機構231a於聚矽氧多孔體20上塗佈(塗覆)黏著劑或接著劑,而形成黏接著層30。又,如同前述,亦可以具有黏接著層30之黏著膠帶等的貼合(貼附),來替代黏著劑或接著劑之塗佈(塗覆)。再來,
在中間層形成區(熟化區)230內進行中間層形成步驟(熟化步驟)(5),使聚矽氧多孔體20與黏接著層30起反應而形成中間層22。又,如同前述,在此步驟中聚矽氧多孔體20會成為強度增強的聚矽氧多孔體21。利用熱風器(加熱機構)231的加熱溫度、時間等並無特別限定,如同前言所述。
9 is a schematic diagram showing yet another example of a coating apparatus of a micro gravure method (micro gravure coating method) and a method of forming the aforementioned porous structure using the same. As shown in the figure, the coating device has the adhesive
[3.聚矽氧多孔體] [3. Polysilicon porous body]
本發明之聚矽氧多孔體的特徵在於,如後述像顯示膜強度之利用Bemcot(註冊商標)所得耐擦傷性為60~100%,顯示可撓性之利用MIT試驗所得耐折次數為100次以上,惟不受此限。 The polysilicon porous body of the present invention is characterized in that the scratch resistance obtained by using Bemcot (registered trademark) is 60 to 100%, as shown below, and the number of folding endurance obtained by using the MIT test is 100 times. Above, but not limited to this.
本發明之聚矽氧多孔體係使用前述凝膠狀矽化合物之粉碎物,因此前述凝膠狀矽化合物的三維結構已被破壊而形成與前述凝膠狀矽化合物截然不同的全新三維結構。如此一來,本發明之聚矽氧多孔體藉由成為形成有無法由前述凝膠狀矽化合物形成之層獲得的全新孔結構(全新空隙結構)之層,而可形成高空隙率且為奈米尺度的聚矽氧多孔體。另外,本發明之聚矽氧多孔體係例如邊調整凝膠狀矽化合物之矽氧烷鍵官能基數邊使前述粉碎物彼此進行化學結合。此外係在作為前述聚矽氧多孔體之前驅物形成全新的三維結構後在結合步驟中行化學結合(例如交聯),因此本發明之聚矽氧多孔體雖具有空隙之結構,依舊可維持充分的強度及可撓性。因此,依據本發明可輕易且簡便地將聚矽氧多孔體供給於各種對象物。具體上,本 發明之聚矽氧多孔體例如可代替空氣層作為絕熱材、吸音材、再生醫療用支架材、結露防止材、光學構件等使用。 The polysilicone porous system of the present invention uses the pulverized product of the gel-like silicon compound, so the three-dimensional structure of the gel-like silicon compound has been broken to form a brand-new three-dimensional structure completely different from the gel-like silicon compound. In this way, the polysilicon porous body of the present invention can be formed into a layer with a new pore structure (new void structure) that cannot be obtained from the layer formed of the aforementioned gel-like silicon compound, thereby forming a high void ratio Porous silica porous body on the meter scale. In addition, the porous polysiloxane system of the present invention, for example, adjusts the number of siloxane bond functional groups of the gel-like silicon compound to chemically bond the pulverized products with each other. In addition, after forming a new three-dimensional structure as a precursor of the aforementioned polysiloxane porous body, chemical bonding (eg, crosslinking) is performed in the bonding step. Therefore, although the polysiloxane porous body of the present invention has a void structure, it can still maintain sufficient Strength and flexibility. Therefore, according to the present invention, the polysilicon porous body can be easily and simply supplied to various objects. Specifically, this The polysilicon porous body of the invention can be used as a heat insulating material, a sound absorbing material, a stent material for regenerative medicine, an anti-condensation material, an optical member, etc. in place of the air layer, for example.
本發明之聚矽氧多孔體例如同前述一般含有凝膠狀矽化合物之粉碎物,且前述粉碎物彼此化學結合。在本發明之聚矽氧多孔體中,前述粉碎物彼此的化學結合(化學鍵)之形態並無特別限制,前述化學鍵之具體例可舉如交聯鍵等。另外,使前述粉碎物彼此行化學結合之方法就像前言提及之前述聚矽氧多孔體之製造方法中的詳細闡述。 The polysilicon porous body of the present invention is, for example, the aforementioned crushed product generally containing a gel-like silicon compound, and the crushed products are chemically combined with each other. In the polysilicon porous body of the present invention, the form of the chemical bond (chemical bond) between the pulverized products is not particularly limited, and specific examples of the chemical bond include cross-linked bonds. In addition, the method of chemically combining the aforementioned pulverized materials with each other is as described in detail in the aforementioned method for manufacturing the polysiloxane porous body.
前述交聯鍵例如為矽氧烷鍵。矽氧烷鍵例如可示例以下所示T2鍵、T3鍵、T4鍵。本發明之聚矽氧多孔體具有矽氧烷鍵時,例如可具有其中任一種鍵,可具有其中任二種鍵,也可三種全部鍵皆具。前述矽氧烷鍵中,T2及T3之比率愈多,愈富可撓性,也就愈可期待凝膠本來的特性,但強度會變弱。另一方面,前述矽氧烷鍵中T4比率一多,雖容易顯現膜強度,但空隙大小會變小且可撓性變弱。因此,宜因應例如用途來改變T2、T3、T4比率。 The aforementioned cross-linking bond is, for example, a siloxane bond. Examples of the siloxane bond include T2 bond, T3 bond, and T4 bond shown below. When the polysiloxane porous body of the present invention has a siloxane bond, for example, it may have any one kind of bond, any two kinds of bonds, or all three kinds of bonds. In the aforementioned siloxane bond, the more the ratio of T2 and T3, the more flexible, the more the original characteristics of the gel can be expected, but the strength will be weaker. On the other hand, if the T4 ratio in the aforementioned siloxane bond is large, although the film strength tends to be expressed, the size of the gap becomes smaller and the flexibility becomes weaker. Therefore, it is appropriate to change the ratio of T2, T3, and T4 according to, for example, use.
本發明之聚矽氧多孔體具有前述矽氧烷鍵時,T2、T3及T4的比例例如在以「1」表示T2時,T2:T3:T4=1:[1~100]:[0~50]、1:[1~80]:[1~40]、1:[5~60]:[1~30]。 When the polysiloxane porous body of the present invention has the aforementioned siloxane bond, when the ratio of T2, T3 and T4 is represented by "1" for example, T2: T3: T4=1: [1~100]: [0~ 50], 1: [1~80]: [1~40], 1: [5~60]: [1~30].
另外,本發明之聚矽氧多孔體以例如所含矽原子為矽氧烷鍵結狀態為佳。就具體例而言,前述聚矽氧多孔體中所含總矽原子中未鍵結之矽原子(亦即殘留矽烷醇)的比率例如為:低於50%、30%以下、15%以下。 In addition, the polysiloxane porous body of the present invention preferably has, for example, a silicon atom contained in a siloxane-bonded state. As a specific example, the ratio of unbonded silicon atoms (that is, residual silanol) in the total silicon atoms contained in the porous polysilicon body is, for example, less than 50%, 30% or less, and 15% or less.
本發明之聚矽氧多孔體具有孔結構,孔之空隙大小係指空隙(孔)之長軸直徑及短軸直徑中之前述長軸直徑。理想的空孔大小例如為5nm~200nm。在前述空隙大小,其下限例如為5nm以上、10nm以上、20nm以上,其上限例如為1000μm以下、500μm以下、100μm以下,其範圍則例如為5nm~1000μm、10nm~500μm、20nm~100μm。空隙大小係因應使用空隙結構之用途來決定適當的空隙大小,例如就必須因應目的調整成期望的空隙大小。又,空隙大小例如可藉由以下方法進行評估。 The polysilicon porous body of the present invention has a pore structure, and the pore size of the pore refers to the aforementioned major axis diameter of the major axis diameter and the minor axis diameter of the void (pore). The ideal pore size is, for example, 5 nm to 200 nm. In the aforementioned void size, the lower limit is, for example, 5 nm or more, 10 nm or more, and 20 nm or more, and the upper limit is, for example, 1000 μm or less, 500 μm or less, and 100 μm or less, and the range is, for example, 5 nm to 1000 μm, 10 nm to 500 μm, and 20 nm to 100 μm. The gap size is to determine the appropriate gap size according to the purpose of using the gap structure, for example, it must be adjusted to the desired gap size according to the purpose. In addition, the gap size can be evaluated by the following method, for example.
(空隙大小之評估) (Evaluation of gap size)
本發明中,前述空隙大小可藉由BET試驗法予以定量。具體上係於比表面積測定裝置(Micromeritics Co.製:商品名ASAP2020)之毛細管投入試樣(本發明之聚矽氧多孔體)0.1g後,在室溫下進行減壓乾燥24小時,將空隙結構內之氣體脫氣。然後使氮氣吸附於前述試樣上,繪出吸附等溫線以求算細孔分布。藉此可評估空隙大小。 In the present invention, the aforementioned void size can be quantified by the BET test method. Specifically, after 0.1 g of a sample (polysilicon porous body of the present invention) was put into a capillary of a specific surface area measuring device (manufactured by Micromeritics Co.: trade name ASAP2020), it was dried under reduced pressure at room temperature for 24 hours, and the voids The gas in the structure is degassed. Then, nitrogen gas was adsorbed on the aforementioned sample, and an adsorption isotherm was drawn to calculate the pore distribution. This allows the gap size to be evaluated.
本發明之聚矽氧多孔體例如顯示膜強度之利用Bemcot(註冊商標)所得耐擦傷性為60~100%。本發明就是因為像具有這種膜強度,所以各種製程中的耐擦傷性優異。本發明在例如製出前述聚矽氧多孔體後的卷取及處置製品薄膜時的生產製程內具有耐刮性。另一方面,本發明之聚矽氧多孔體例如可利用後述加熱步驟中之觸媒反應作為減少空隙率的替代案,來提高前述凝膠狀矽化合物之粉碎物的粒子大小及前述粉碎物彼此相互矽氧烷鍵結之頸部的結合力。藉此,本發明之聚矽氧多孔體就可對例如本來脆弱的空隙結構賦予一定程度的強度。 The polysilicon porous body of the present invention exhibits a scratch resistance of 60 to 100% using Bemcot (registered trademark), for example, showing the strength of the film. The present invention is because it has such a film strength, so it has excellent scratch resistance in various processes. The present invention has scratch resistance in the production process, for example, when winding up and disposing the product film after producing the aforementioned polysilicon porous body. On the other hand, the polysilicon porous body of the present invention can use, for example, a catalyst reaction in a heating step described later as an alternative to reducing the porosity to increase the particle size of the crushed product of the gel-like silicon compound and the crushed products The bonding force of the necks bonded to each other by silicone. In this way, the polysilicon porous body of the present invention can impart a certain degree of strength to, for example, a fragile void structure.
前述耐擦傷性中,其下限例如為60%以上、80%以上、90%以上,其上限例如為100%以下、99%以下、98%以下,其範圍則例如為60~100%、80~99%、90~98%。 In the aforementioned scratch resistance, the lower limit is, for example, 60% or more, 80% or more, 90% or more, the upper limit is, for example, 100% or less, 99% or less, 98% or less, and the range is, for example, 60 to 100%, 80 to 99%, 90~98%.
前述耐擦傷性例如可藉由以下方法進行測定。 The aforementioned scratch resistance can be measured by, for example, the following method.
(耐擦傷性之評估) (Assessment of scratch resistance)
(1)將塗覆‧成膜於丙烯酸薄膜上的空隙層(本發明之聚矽氧多孔體)取樣出直徑15mm左右的圓狀物。 (1) Sampling the void layer (polysiloxy porous body of the present invention) coated on the acrylic film to sample a round object with a diameter of about 15 mm.
(2)接著針對前述試樣以螢光X射線(島津製作所公司製:ZSX Primus II)鑑定矽以測定Si塗佈量(Si0)。接著,就前述丙烯酸薄膜上之前述空隙層,從前述進行取樣的周遭將前述空隙層裁切成50mm×100mm並將其固定於玻璃板(厚3mm)後,以Bemcot(註冊商標)進行滑動試驗。滑動條件係設為砝碼100g、10往復。
(2) Next, silicon was identified with fluorescent X-rays (manufactured by Shimadzu Corporation: ZSX Primus II) for the aforementioned sample to measure the Si coating amount (Si 0 ). Next, with respect to the void layer on the acrylic film, the void layer was cut into 50 mm × 100 mm from the periphery of the sample and fixed to a glass plate (
(3)從結束滑動的前述空隙層以與前述(1)同樣的方式進行取樣及螢光X測定,以檢測擦傷試驗後的Si殘存量(Si1)。耐擦傷性係以Bemcot(註冊商標)試驗前後的Si殘存率(%)為定義,可以下述式表示。 (3) Sampling and fluorescent X measurement are performed in the same manner as in the above (1) from the void layer where the sliding has ended, to detect the remaining amount of Si (Si 1 ) after the scratch test. The scratch resistance is defined as the Si residual rate (%) before and after the Bemcot (registered trademark) test, and can be expressed by the following formula.
耐擦傷性(%)=[殘存Si量(Si1)/Si塗佈量(Si0)]×100(%) Scratch resistance (%)=[Remaining Si amount (Si 1 )/Si coating amount (Si 0 )]×100(%)
本發明之聚矽氧多孔體例如顯示可撓性之利用MIT試驗所得的耐折次數為100次以上。本發明就因為具有這種可撓性,所以例如製造過程中進行卷取或使用時等之處置性優異。 For example, the polysilicon porous body of the present invention exhibits flexibility, and the number of times of folding endurance obtained by the MIT test is 100 or more. Since the present invention has such flexibility, for example, it is excellent in handleability during coiling or use during the manufacturing process.
在前述耐折次數,其下限例如為100次以上、500次以上、1000次以上,其上限並無特別限制,例如為10000次以下,其範圍則例如為100~10000次、500~10000次、1000~10000次。 In the aforementioned folding endurance times, the lower limit is, for example, 100 times or more, 500 times or more, and 1,000 times or more, and the upper limit is not particularly limited, for example, 10,000 times or less, and the range is, for example, 100 to 10,000 times, 500 to 10,000 times, 1000~10000 times.
前述可撓性例如係表示物質的易變形性。前述利用MIT試驗所得的耐折次數例如可藉由以下方法進行測定。 The aforementioned flexibility means, for example, the easy deformability of a substance. The number of times of folding endurance obtained by the aforementioned MIT test can be measured by the following method, for example.
(耐折試驗之評估) (Evaluation of folding endurance test)
將前述空隙層(本發明之聚矽氧多孔體)裁切成20mm×80mm的短條狀後,裝設於MIT耐折試驗機(TESTER SANGYO CO,.LTD.製:BE-202)上,施加1.0N的荷重。包夾前述空隙層的夾頭部係使用R2.0mm,耐折次數最多進行10000次,並以前述空隙層破斷之時間點的次數作為耐折次數。 After cutting the aforementioned void layer (polysilicon porous body of the present invention) into a short strip of 20 mm×80 mm, it was mounted on an MIT folding tester (manufactured by TESTER SANGYO CO,. LTD.: BE-202), Apply a load of 1.0N. R2.0mm is used as the chuck portion that encloses the void layer, and the number of times of folding endurance is at most 10,000 times, and the number of times when the void layer breaks is taken as the number of endurance of folding.
在本發明之聚矽氧多孔體中,膜密度無特別限 制,其下限例如為1g/cm3以上、10g/cm3以上、15g/cm3以上,其上限例如為50g/cm3以下、40g/cm3以下、30g/cm3以下、2.1g/cm3以下,其範圍則例如為5~50g/cm3、10~40g/cm3、15~30g/cm3、1~2.1g/cm3。 In the polysilicon porous body of the present invention, the film density is not particularly limited, and its lower limit is, for example, 1 g/cm 3 or more, 10 g/cm 3 or more, 15 g/cm 3 or more, and its upper limit is, for example, 50 g/cm 3 or less, 40 g /cm 3 or less, 30g/cm 3 or less, 2.1g/cm 3 or less, the range is for example 5~50g/cm 3 , 10~40g/cm 3 , 15~30g/cm 3 , 1~2.1g/cm 3 .
前述膜密度例如可以下述方法測定。 The aforementioned film density can be measured by, for example, the following method.
(膜密度之評估) (Assessment of film density)
於丙烯酸薄膜形成空隙層(本發明之聚矽氧多孔體)後,使用X射線繞射裝置(RIGAKU公司製:RINT-2000)測定全反射區的X射線反射率。調配好Intensity(強度)與2θ後,從空隙層‧基材之全反射臨界角算出空孔率(P%)。膜密度可以下式表示。 After the void layer (polysilicon porous body of the present invention) was formed on the acrylic film, the X-ray reflectivity of the total reflection area was measured using an X-ray diffraction device (manufactured by RIGAKU: RINT-2000). After blending Intensity and 2θ, calculate the porosity (P%) from the critical angle of total reflection of the void layer and substrate. The film density can be expressed by the following formula.
膜密度(%)=100(%)-空孔率(P%) Membrane density (%) = 100 (%)-porosity (P%)
本發明之聚矽氧多孔體只要如前述具有孔結構(多孔質結構)即可,例如可為前述孔結構連續構成的開放性發泡結構體。前述開放性發泡結構體例如係表示在前述聚矽氧多孔體中孔結構以三維型態連結,亦可說是前述孔結構之內部空隙連接在一起的狀態。多孔質體具有開放性發泡結構時,藉此可提高塊體(bulk)中所佔空隙率,惟使用像空心二氧化矽之類的密閉性發泡粒子時,會無法形成開放性發泡結構。相對於此,本發明之聚矽氧多孔體因為二氧化矽溶膠粒子(形成溶膠之凝膠狀矽化合物的粉碎物)具有三維的樹狀結構,所以在塗覆膜(含有前述凝膠狀矽化合物之粉碎物的溶膠之塗覆膜)中可藉由前述樹狀粒子沉降‧堆積而輕易地形成開放性發泡結構。另外,本發明之 聚矽氧多孔體較理想係形成開放性發泡結構具有複數個細孔分布的單塊(monolith)結構。前述單塊結構係指例如存有奈米尺寸之微細空隙的結構及以相同的奈米空隙集結成的開放性發泡結構存在的階層結構。形成前述單塊結構時,例如可以微細空隙賦予強度,同時又可以粗大的開放性發泡空隙賦予高空隙率,進而可兼顧膜強度及高空隙率。為了形成其等的單塊結構,例如,首先在粉碎成前述粉碎物的前一階段之前述凝膠狀矽化合物控制將生成之空隙結構的細孔分布相當重要。此外,例如在粉碎前述凝膠狀矽化合物時,將前述粉碎物的粒度分布控制在期望的大小可形成前述單塊結構。 The polysiloxane porous body of the present invention may have a pore structure (porous structure) as described above, and may be, for example, an open foam structure having the pore structure continuously formed. The open foam structure, for example, means that the pore structure of the polysilicon porous body is connected in a three-dimensional pattern, and it can also be said that the internal voids of the pore structure are connected together. When the porous body has an open foam structure, the porosity of the bulk can be increased, but when using closed foam particles such as hollow silica, open foam cannot be formed structure. In contrast, the polysilica porous body of the present invention has a three-dimensional dendritic structure because of silica dioxide sol particles (a pulverized product of a gel-like silicon compound that forms a sol), so the coating film (containing the gel-like silicon The coating film of the sol of the pulverized compound of the compound) can easily form an open foam structure by sedimentation and accumulation of the aforementioned dendritic particles. In addition, the invention The polysilicon porous body is ideal to form an open foam structure with a monolith structure with a plurality of pores distributed. The above-mentioned monolithic structure refers to, for example, a structure having fine voids of nanometer size and a hierarchical structure in which an open foam structure having the same nanovoids is assembled. When the aforementioned monolithic structure is formed, for example, fine pores can be used to provide strength, and at the same time, coarse open foamed pores can be used to impart a high void ratio, thereby achieving both film strength and high void ratio. In order to form such a monolithic structure, for example, it is very important to control the pore distribution of the void structure to be generated in the gel-like silicon compound in the previous stage of pulverization into the pulverized product. In addition, for example, when pulverizing the gel-like silicon compound, the monolithic structure can be formed by controlling the particle size distribution of the pulverized material to a desired size.
在本發明之聚矽氧多孔體中,顯示柔軟性的撕裂痕生成延伸率並無特別限制,其下限例如為0.1%以上、0.5%以上、1%以上,其上限例如為3%以下。前述撕裂痕生成延伸率的範圍例如為0.1~3%、0.5~3%、1~3%。 In the polysilicon porous body of the present invention, the elongation rate at which tear marks showing flexibility are not particularly limited, and the lower limit is, for example, 0.1% or more, 0.5% or more, 1% or more, and the upper limit is, for example, 3% or less. The range of the elongation rate at which the tear marks are generated is, for example, 0.1 to 3%, 0.5 to 3%, and 1 to 3%.
前述撕裂痕生成延伸率例如可藉由以下方法進行測定。 The elongation rate at which the tear marks are generated can be measured by the following method, for example.
(撕裂痕生成延伸率之評估) (Evaluation of elongation of tear marks)
於丙烯酸薄膜形成空隙層(本發明之聚矽氧多孔體)後,取出5mm×140mm的短條狀試樣。接著,將前述試樣以夾具間距離為100mm的方式夾定於拉伸試驗機(島津製作所社製:AG-Xplus)以後,在0.1mm/s之拉伸速度下進行拉伸試驗。仔細觀察試驗中的前述試樣並在前述試樣一部分出現裂痕的時間碘結束試驗,且以出現裂痕之時間點的 延伸率(%)為撕裂痕生成延伸率。 After forming a void layer (polysilicon porous body of the present invention) on the acrylic film, a short strip sample of 5 mm×140 mm was taken out. Next, after the sample was clamped to a tensile testing machine (manufactured by Shimadzu Corporation: AG-Xplus) so that the distance between the clamps was 100 mm, a tensile test was performed at a tensile speed of 0.1 mm/s. Carefully observe the aforementioned sample in the test and end the test at the time when a crack appeared in a part of the aforementioned sample, and the time at which the crack appeared Elongation (%) is the elongation generated by tear marks.
在本發明之聚矽氧多孔體中,顯示透明性的霧度無特別限制,其下限例如為0.1%以上、0.2%以上、0.3%以上,其上限例如為10%以下、5%以下、3%以下,其範圍則例如為0.1~10%、0.2~5%、0.3~3%。 In the polysilicon porous body of the present invention, the haze showing transparency is not particularly limited, and its lower limit is, for example, 0.1% or more, 0.2% or more, 0.3% or more, and its upper limit is, for example, 10% or less, 5% or less, 3 % Or less, and the range is, for example, 0.1 to 10%, 0.2 to 5%, and 0.3 to 3%.
前述霧度例如可以下述方法測定。 The aforementioned haze can be measured by, for example, the following method.
(霧度評估) (Haze evaluation)
將空隙層(本發明之聚矽氧多孔體)裁切成50mm×50mm的大小並安裝於霧度計(村上色彩技術研究所公司製:HM-150)上,測定霧度。關於霧度值可以下式算出。 The void layer (polysilicon porous body of the present invention) was cut into a size of 50 mm×50 mm and mounted on a haze meter (Muragami Color Technology Research Institute Co., Ltd.: HM-150), and the haze was measured. The haze value can be calculated by the following formula.
霧度(%)=[擴散透射率(%)/全光線透光率(%)]×100(%) Haze (%) = [diffused transmittance (%) / total light transmittance (%)] × 100 (%)
前述折射率一般係以真空中光波面的傳達速度與在媒質內的傳播速度之比,稱作其媒質之折射率。本發明之聚矽氧多孔體的折射率無特別限制,其上限例如為1.3以下、低於1.3、1.25以下、1.2以下、1.15以下,其下限例如為1.05以上、1.06以上、1.07以上,其範圍則例如為1.05以上且1.3以下、1.05以上且低於1.3、1.05以上且1.25以下、1.06以上~低於1.2、1.07以上~1.15。 The aforementioned refractive index is generally the ratio of the propagation speed of the light wave surface in vacuum to the propagation velocity in the medium, and is called the refractive index of the medium. The refractive index of the polysilicon porous body of the present invention is not particularly limited, and its upper limit is, for example, 1.3 or less, less than 1.3, 1.25 or less, 1.2 or less, or 1.15 or less, and its lower limit is, for example, 1.05 or more, 1.06 or more, 1.07 or more, and its range For example, it is 1.05 or more and 1.3 or less, 1.05 or more and less than 1.3, 1.05 or more and 1.25 or less, 1.06 or more to less than 1.2, and 1.07 or more to 1.15.
本發明中,在未特別說明的前提下,前述折射率係指在波長550nm下測得的折射率。又,折射率之測定方法並無特別限定,例如可藉由下述方法測定。 In the present invention, unless otherwise specified, the aforementioned refractive index refers to the refractive index measured at a wavelength of 550 nm. In addition, the method of measuring the refractive index is not particularly limited. For example, it can be measured by the following method.
(折射率評估) (Refractive index evaluation)
於丙烯酸薄膜形成空隙層(本發明之聚矽氧多孔體)後,裁切成50mm×50mm的大小並將之以黏著層貼合於玻 璃板(厚:3mm)的表面。將前述玻璃板的背面中央部(直徑20mm左右)以黑色麥克筆塗黑調製出不會在前述玻璃板之背面反射的試樣。將前述試樣安裝於橢圓偏光計(J.A.Woollam Japan社製:VASE),在波長500nm且入射角50~80度之條件下測定折射率,並以其平均值作為折射率。 After forming a void layer (polysilicon porous body of the present invention) on the acrylic film, cut it into a size of 50 mm × 50 mm and attach it to the glass with an adhesive layer The surface of the glass plate (thickness: 3mm). The center portion of the back surface of the glass plate (diameter about 20 mm) was painted black with a black marker to prepare a sample that does not reflect on the back surface of the glass plate. The aforementioned sample was mounted on an ellipsometer (manufactured by J.A. Woollam Japan: VASE), and the refractive index was measured under the conditions of a wavelength of 500 nm and an incident angle of 50 to 80 degrees, and the average value was used as the refractive index.
本發明之聚矽氧多孔體的厚度無特別限制,其下限例如為0.05μm以上、0.1μm以上,其上限例如為1000μm以下、100μm以下,其範圍則例如為0.05~1000μm、0.1~100μm。 The thickness of the polysilicon porous body of the present invention is not particularly limited. The lower limit is, for example, 0.05 μm or more and 0.1 μm or more, the upper limit is, for example, 1000 μm or less, and 100 μm or less, and the range is, for example, 0.05 to 1000 μm, 0.1 to 100 μm.
本發明之聚矽氧多孔體的形態無特別限制,例如可為薄膜狀亦可為塊狀等。 The form of the polysilicon porous body of the present invention is not particularly limited, and may be, for example, a thin film or a bulk.
本發明之聚矽氧多孔體的製造方法並無特別限制,例如可藉由前言提及之聚矽氧多孔體之製造方法來製造。 The manufacturing method of the polysilicon porous body of the present invention is not particularly limited, and for example, it can be manufactured by the manufacturing method of the polysilicon porous body mentioned in the introduction.
[4.聚矽氧多孔體之用途] [4. Use of polysilicon porous body]
使用前述本發明之塗料製造的前述聚矽氧多孔體如前述可發揮與空氣層同樣的機能,因此可代替前述空氣層利用在具有前述空氣層的對象物上。 The polysilicone porous body manufactured using the coating material of the present invention can exert the same function as the air layer as described above, and therefore can be used for an object having the air layer instead of the air layer.
含有前述聚矽氧多孔體之構件可舉如絕熱材、吸音材、結露防止材、光學構件等。該等構件例如可配置在需要空氣層的部位作使用。該等構件之形態無特別限制,例如可為薄膜。 Examples of the member containing the porous silicone body include heat insulating materials, sound absorbing materials, dew condensation preventing materials, and optical members. These members can be used, for example, at locations where an air layer is required. The shape of these members is not particularly limited, and may be a thin film, for example.
此外,含有前述聚矽氧多孔體之構件可舉如再生醫療用支架材。如前言,前述聚矽氧多孔體具有可發揮 與空氣層同樣機能的多孔結構。前述聚矽氧多孔體之空隙適於用於保持例如細胞、營養源、空氣等,因此前述多孔質結構可有效作為例如再生醫療用的支架。 In addition, examples of the member containing the porous polysilicon body include stent materials for regenerative medicine. As mentioned in the introduction, the aforementioned polysiloxane porous body has Porous structure with the same function as the air layer. The voids of the aforementioned polysilicon porous body are suitable for holding, for example, cells, nutrient sources, air, etc. Therefore, the aforementioned porous structure can be effectively used as a scaffold for regenerative medicine, for example.
含有前述聚矽氧多孔體之構件除了該等以外,還可舉如:全反射構件、印墨影像接收材、單層AR(減反射)、單層蛾眼(moth eye)、介電係數材等。 The members containing the aforementioned polysilicon porous body may include, in addition to these, total reflection members, ink image receiving materials, single-layer AR (antireflection), single-layer moth eye, and dielectric constant materials Wait.
接下來,說明本發明之實施例。惟,本發明不受以下實施例限定。 Next, an embodiment of the present invention will be described. However, the present invention is not limited by the following examples.
(實施例1) (Example 1)
在本實施例中,係以下述方式製造本發明之塗料及多孔質結構(聚矽氧多孔體)。 In this example, the paint and the porous structure (polysilicon porous body) of the present invention were manufactured in the following manner.
(1)矽化合物之凝膠化 (1) Gelation of silicon compounds
於DMSO2.2g溶解0.95g之矽化合物之前驅體MTMS。於前述混合液中添加0.01mol/L之草酸水溶液0.5g,在室溫下攪拌30分使MTMS水解而生成參(羥)甲基矽烷。 Dissolve 0.95g of silicon compound precursor MTMS in 2.2g of DMSO. 0.5 g of an aqueous solution of oxalic acid of 0.01 mol/L was added to the aforementioned mixed solution, and stirred at room temperature for 30 minutes to hydrolyze MTMS to produce ginseng (hydroxy)methylsilane.
於DMSO 5.5g添加28%濃度之氨水0.38g及純水0.2g後,再加添前述經水解處理的前述混合液,在室溫下攪拌15分,使參參(羥)甲基矽烷凝膠化而獲得凝膠狀矽化合物。 After adding 0.38g of 28% ammonia water and 0.2g of pure water to 5.5g of DMSO, add the above-mentioned hydrolyzed mixture and stir for 15 minutes at room temperature to make ginseng (hydroxy)methylsilane gel To obtain a gel-like silicon compound.
(2)熟成處理 (2) Ripening treatment
將前述經凝膠化處理的混合液直接在40℃下培養20小時,進行熟成處理。 The above-mentioned gelatinized mixed solution was directly incubated at 40°C for 20 hours, and subjected to ripening treatment.
(3)粉碎處理 (3) Crushing treatment
接著,使用刮勺將前述經熟成處理的凝膠狀矽化合物粉碎成數mm~數cm大小的顆粒狀。於此添加IPA 40g,稍作攪拌後在室溫下靜置6小時,傾析出凝膠中之溶劑及觸媒。同樣的傾析處理重複3次後,結束溶劑取代。然後對前述混合液中之前述凝膠狀矽化合物進行高壓無介質粉碎。此粉碎處理係使用均質機(商品名UH-50、SMT公司製),於5cc之螺旋瓶中秤量出凝膠1.18g及IPA 1.14g後,在50W、20kHz之條件下粉碎2分鐘。 Next, the aging-treated gel-like silicon compound is pulverized into particles having a size of several mm to several cm using a spatula. Here, 40 g of IPA was added, and after a little stirring, it was allowed to stand at room temperature for 6 hours, and the solvent and catalyst in the gel were decanted. After the same decantation treatment was repeated 3 times, the solvent substitution was ended. Then, the aforementioned gel-like silicon compound in the aforementioned mixed solution is subjected to high-pressure medium-less pulverization. This pulverization process uses a homogenizer (trade name UH-50, manufactured by SMT), weighs 1.18 g of gel and 1.14 g of IPA in a 5 cc screw bottle, and pulverizes under 50W and 20 kHz conditions for 2 minutes.
藉由前述粉碎處理將前述混合液中之前述凝膠狀矽化合物粉碎後,前述混合液即成為前述粉碎物之溶膠液。以動態光散射式Nanotrac粒度分析計(日機裝公司製、UPA-EX150型)確認體積平均粒徑的結果得0.50~0.70,該體積平均粒徑係表示前述混合液中所含前述粉碎物之粒度偏差。再來準備0.3重量%之KOH水溶液,於前述溶膠液0.5g添加0.02g之觸媒KOH,調製出塗覆液(含觸媒之塗料)。 After the gelatinous silicon compound in the mixed solution is pulverized by the pulverization treatment, the mixed solution becomes the sol solution of the pulverized product. As a result of confirming the volume average particle size with a dynamic light-scattering Nanotrac particle size analyzer (manufactured by Nikkiso Co., Ltd., model UPA-EX150), the volume average particle size was 0.50 to 0.70. Particle size deviation. Furthermore, a 0.3% by weight KOH aqueous solution was prepared, and 0.02 g of catalyst KOH was added to 0.5 g of the aforementioned sol solution to prepare a coating liquid (catalyst-containing coating).
(4)形成塗覆膜及形成聚矽氧多孔體 (4) Formation of coating film and formation of polysilicon porous body
接著,藉由棒塗法將前述塗覆液塗佈於聚對苯二甲酸乙二酯(PET)製基材之表面上,形成塗覆膜。前述塗佈係設為前述基材表面每1mm2就有6μL之前述溶膠液。在溫度100℃下將前述塗覆膜進行1分鐘處理,以完成聚矽氧多孔體之前驅物的成膜及前驅物之前述粉碎物彼此的交聯反應。藉此,於前述基材上形成前述粉碎物彼此化學結合而成之厚1μm的聚矽氧多孔體。 Next, the coating liquid was applied on the surface of the base material made of polyethylene terephthalate (PET) by a bar coating method to form a coating film. The coating system is set to have 6 μL of the sol solution per 1 mm 2 of the surface of the substrate. The coating film was treated at a temperature of 100° C. for 1 minute to complete the film formation of the precursor of the polysiloxane porous body and the cross-linking reaction of the pulverized product of the precursor. In this way, a 1 μm-thick polysilicon porous body formed by chemically combining the pulverized materials on the substrate is formed.
(實施例2) (Example 2)
準備1.5重量%之光鹼產生觸媒(和光純藥工業股份有限公司:商品名WPBG266)之IPA(異丙醇)溶液,於前述溶膠粒子液0.75g添加實施例1之KOH 0.031g而調製出塗覆液,再於形成塗覆膜後進行350mJ/cm2(@360nm)之UV照射,除此以外進行與實施例1同樣的操作,而於基材上獲得聚矽氧多孔體。再來,在60℃下將前述多孔體進行加熱熟化20hr,進一步提高膜強度。 Prepare an IPA (isopropanol) solution of 1.5% by weight of photobase generating catalyst (Wako Pure Chemical Industries, Ltd.: trade name WPBG266), and add KOH 0.031g of Example 1 to 0.75g of the aforementioned sol particle solution to prepare The coating liquid was subjected to UV irradiation of 350 mJ/cm 2 (@360nm) after the formation of the coating film, except that the same operation as in Example 1 was performed to obtain a polysilicon porous body on the substrate. Furthermore, the porous body was heated and aged at 60°C for 20 hr to further increase the film strength.
(實施例3) (Example 3)
在實施例2中記載之塗覆液中進一步對前述溶膠液0.75g加入0.018g之5重量%之雙(三甲氧矽基)乙烷,除此以外進行與實施例2同樣的操作而獲得聚矽氧多孔體。 To the coating solution described in Example 2 was further added 0.018 g of 5% (by weight) bis(trimethoxysilyl)ethane to 0.75 g of the aforementioned sol solution, and the procedure was the same as in Example 2 except that the polymer was obtained. Silica porous body.
(比較例1) (Comparative example 1)
除了將熟成步驟之培養變更為40℃且72小時之長時間熟成以外,以與實施例1同樣的方法形成多孔體。 A porous body was formed in the same manner as in Example 1, except that the cultivation in the aging step was changed to 40° C. and a long-term aging of 72 hours.
(比較例2) (Comparative example 2)
使用TEOS(四甲氧矽烷)作為矽化合物之前驅物,並將熟成步驟之培養並將熟成步驟之培養變更為40℃且72小時之長時間熟成,除此以外以與實施例1同樣的方法形成多孔體。此外,在本比較例中將多孔體(膜)製成1μm厚時曾於膜產生部分破裂,故將厚度改為200nm來製膜。 Using TEOS (tetramethoxysilane) as a precursor of the silicon compound, and cultivating the aging step and changing the culturing step to 40°C and a long time of 72 hours, the same method as in Example 1 was used. A porous body is formed. In addition, in this comparative example, when the porous body (membrane) was made to be 1 μm thick, the film was partially broken, so the thickness was changed to 200 nm to form a film.
針對實施例1、比較例1及比較例2測定折射率、殘留矽烷醇基之比例及耐擦傷性。該等結果顯示於下述表1。 For Example 1, Comparative Example 1 and Comparative Example 2, the refractive index, the ratio of residual silanol groups and the scratch resistance were measured. These results are shown in Table 1 below.
如前述表1所示,使用實施例1製得之溶膠溶液形成的聚矽氧多孔體(空隙層)確認厚度為1μm,折射率低於1.2且也簡便地取得了膜強度。此外,表1中雖未顯示,在實施例2及3中亦同樣地確認為低折射率且膜強度高。另一方面,使用比較例1之溶膠溶液時,因為進行長時間熟成,所以凝膠中幾乎沒有殘留矽烷醇基。所以,未在結合步驟形成交聯結構,而無法獲得充分的膜強度。此外,比較例2之溶膠溶液係使用TEOS作為矽化合物之前驅物,因此雖有獲得高度的膜強度,但同時可撓性也顯著降低。故而可知,為了兼顧膜強度及可撓性,調整矽化合物之前驅物及殘留矽烷醇基極為有用。 As shown in Table 1 above, the polysilicon porous body (void layer) formed using the sol solution prepared in Example 1 was confirmed to have a thickness of 1 μm, a refractive index of less than 1.2, and film strength was also easily obtained. In addition, although not shown in Table 1, in Examples 2 and 3, it was confirmed that the refractive index was low and the film strength was high. On the other hand, when the sol solution of Comparative Example 1 is used, since the aging is carried out for a long time, there is almost no silanol group remaining in the gel. Therefore, a cross-linked structure is not formed in the bonding step, and sufficient film strength cannot be obtained. In addition, the sol solution of Comparative Example 2 uses TEOS as a precursor of the silicon compound. Therefore, although a high film strength is obtained, the flexibility is also significantly reduced. Therefore, in order to balance the strength and flexibility of the film, it is extremely useful to adjust the precursor of the silicon compound and the residual silanol group.
(實施例4) (Example 4)
在本實施例中,係以下述方式製造本發明之塗料及多孔質結構(聚矽氧多孔體)。 In this example, the paint and the porous structure (polysilicon porous body) of the present invention were manufactured in the following manner.
首先,以與實施例1同樣的方式進行前述「(1)矽化合物之凝膠化」及「(2)熟成處理」。接著,換掉0.3重量%之KOH水溶液,改將1.5重量%之光鹼產生觸媒(和光純藥工業股份有限公司:商品名WPBG266)之IPA(異丙醇)溶液添加於前述溶膠粒子液中,除此以外以與實施例1同樣 的方式進行前述「(3)粉碎處理」,調製出塗覆液(含觸媒之塗料)。相對於前述溶膠粒子液0.75g,前述光鹼產生觸媒之IPA溶液的添加量為0.031g。其後,以與實施例1同樣的方式進行前述「(4)形成塗覆膜及形成聚矽氧多孔體」。對以上述方式製得之乾燥後的多孔體照射UV。前述UV照射為波長360nm之光,光照射量(能量)則設為500mJ。再來,照射UV後在60℃下進行加熱熟化22hr而形成本實施例之多孔質結構。 First, in the same manner as in Example 1, the aforementioned "(1) Gelation of silicon compound" and "(2) Aging treatment" were performed. Next, the 0.3% by weight KOH aqueous solution was replaced, and an IPA (isopropanol) solution of 1.5% by weight photobase generating catalyst (Wako Pure Chemical Industries, Ltd.: trade name WPBG266) was added to the sol particle liquid. , Except for the same as Example 1 The above-mentioned "(3) Crushing treatment" is used to prepare the coating liquid (catalyst-containing coating). The addition amount of the IPA solution of the photobase generating catalyst to 0.075 g of the sol particle liquid was 0.031 g. Thereafter, in the same manner as in Example 1, the aforementioned "(4) Formation of coating film and formation of polysilicon porous body" were performed. The dried porous body prepared in the above-mentioned manner is irradiated with UV. The aforementioned UV irradiation is light with a wavelength of 360 nm, and the light irradiation amount (energy) is set to 500 mJ. Furthermore, after UV irradiation, heating and aging were carried out at 60° C. for 22 hr to form the porous structure of this example.
(實施例5) (Example 5)
未在照射UV後進行加熱熟化,除此以外進行與實施例4同樣的操作而形成塗料及多孔質結構(聚矽氧多孔體)。 After heating and aging without UV irradiation, the same operation as in Example 4 was carried out to form a paint and a porous structure (polysilicon porous body).
(實施例6) (Example 6)
添加光鹼產生觸媒之IPA溶液後,再於前述溶膠液0.75g加入0.018g之5重量%之雙(三甲氧)矽烷以調整塗覆液,除此以外進行與實施例4同樣的操作而形成塗料及多孔質結構(聚矽氧多孔體)。 After adding the IPA solution of the photobase to produce the catalyst, 0.018g of 5 wt% bis(trimethoxy)silane was added to the above sol solution 0.75g to adjust the coating liquid, except that the same operation as in Example 4 was carried out. Formation of paint and porous structure (polysilicon porous body).
(實施例7) (Example 7)
相對於前述溶膠液0.75g令光鹼產生觸媒之IPA溶液的添加量為0.054g,除此以外進行與實施例4同樣的操作而形成塗料及多孔質結構(聚矽氧多孔體)。 The addition amount of the IPA solution for the photobase generating catalyst to 0.75 g of the aforementioned sol solution was 0.054 g. Except for this, the same operation as in Example 4 was performed to form a paint and a porous structure (polysilicon porous body).
(實施例8) (Example 8)
以與實施例4同樣的方式對乾燥後之多孔體照射UV後,於加熱熟化前在室溫下將單面塗有黏著劑(黏接著層)的PET薄膜之前述黏著劑側貼附於前述多孔體以後,在60 ℃下加熱熟化22hr。除此以外,進行與實施例4同樣的操作而形成塗料及多孔質結構(聚矽氧多孔體)。 After irradiating the dried porous body with UV in the same manner as in Example 4, the adhesive side of the PET film coated with an adhesive (adhesive layer) on one side was attached to the foregoing at room temperature before heating and aging. After the porous body, at 60 Heating and aging at ℃ for 22hr. Except for this, the same operation as in Example 4 was carried out to form a paint and a porous structure (polysilicon porous body).
(實施例9) (Example 9)
未於貼附PET薄膜後進行加熱熟化,除此以外進行與實施例8同樣的操作而形成塗料及多孔質結構(聚矽氧多孔體)。 After the PET film was attached, heating and aging were not carried out, and the same operations as in Example 8 were carried out to form a paint and a porous structure (polysilicon porous body).
(實施例10) (Example 10)
添加光鹼產生觸媒之IPA溶液後,相對於前述溶膠液0.75g進一步加入0.018g之5重量%之雙(三甲氧)矽烷以調整塗覆液,除此以外進行與實施例8同樣的操作而形成塗料及多孔質結構(聚矽氧多孔體)。 After the IPA solution of the photobase generating catalyst was added, 0.018 g of 5 wt% bis(trimethoxy)silane was further added to 0.75 g of the aforementioned sol solution to adjust the coating liquid, except that the same operation as in Example 8 was performed. And the formation of paint and porous structure (polysilicon porous body).
(實施例11) (Example 11)
相對於前述溶膠液0.75g令光鹼產生觸媒之IPA溶液的添加量為0.054g,除此以外進行與實施例8同樣的操作而形成塗料及多孔質結構(聚矽氧多孔體)。 The addition amount of the IPA solution for the photobase generating catalyst to 0.75 g of the sol solution was 0.054 g. Except for this, the same operation as in Example 8 was carried out to form a paint and a porous structure (polysilicon porous body).
針對實施例4~11之多孔質結構,藉由前述方法測定折射率、黏著剝離強度及霧度,並將結果顯示於下述表2及3。惟,在實施例6~9之黏著剝離強度測定中,該等積層薄膜卷材係處在已與PET薄膜及黏着層貼合之狀態,故而省略了PET薄膜及丙烯酸系黏著劑的貼附。此外,實施例4~11之塗覆液(含觸媒之塗料)的保存穩定性亦合併顯示於表2及3。該保存穩定性係將前述塗覆液在在室溫下放置1週後以目視確認前述塗覆液有無變化之結果。 For the porous structures of Examples 4 to 11, the refractive index, adhesive peel strength and haze were measured by the aforementioned method, and the results are shown in Tables 2 and 3 below. However, in the measurement of the adhesive peel strength of Examples 6 to 9, the laminated film rolls were in a state of being bonded to the PET film and the adhesive layer, so the attachment of the PET film and the acrylic adhesive was omitted. In addition, the storage stability of the coating solutions (catalyst-containing coatings) of Examples 4 to 11 are also shown in Tables 2 and 3. This storage stability is the result of visually confirming whether the coating liquid has changed after being left at room temperature for 1 week.
如前述表2及3顯示,製得之厚1μm的實施例4~11之聚矽氧多孔體中,折射率均在1.14~1.16的極低數值。此外,該等的超低折射率層連霧度值都顯示出0.4的極低數值,因此確認透明性也極高。此外,實施例4~11之超低折射率層的黏著剝離強度很高,因此確認即使是卷取成卷體,依舊具有不容易從積層薄膜卷材之其它層剝離的高強度。再者,實施例4~11之聚矽氧多孔體確認耐擦傷性也極高。另外,實施例4~11的塗覆液(含觸媒之塗料)確認在保存1週以後以目視觀察也未看到變化,由此也確認保存穩定性佳,可有效製造穩定品質的聚矽氧多孔體。 As shown in Tables 2 and 3 above, in the prepared polysilicon porous bodies of Examples 4 to 11 with a thickness of 1 μm, the refractive indexes are all at extremely low values of 1.14 to 1.16. In addition, these ultra-low refractive index layers even have extremely low haze values of 0.4, so it is confirmed that the transparency is also extremely high. In addition, since the ultra-low refractive index layers of Examples 4 to 11 have high adhesive peel strength, it was confirmed that even when wound into a roll, they still have high strength that is not easily peeled from other layers of the laminated film roll. In addition, the polysiloxane porous bodies of Examples 4 to 11 were confirmed to have extremely high scratch resistance. In addition, the coating solutions (catalyst-containing coatings) of Examples 4 to 11 confirmed that there was no change after 1 week of storage by visual observation, which also confirmed that the storage stability was good, and stable quality polysilicon could be efficiently produced Oxygen porous body.
如以上說明,藉由本發明之製造方法製得的塗料含有前述凝膠狀矽化合物之粉碎物且前述粉碎物含有殘留矽烷醇基,所以例如藉由使用前述塗料形成塗覆膜,再使前述塗覆膜之前述粉碎物行化學結合,即可製造具有空隙的多孔結構。如此一來,使用前述塗料形成的前述多孔質結構便可發揮如前言提及之與空氣層同樣的機能。此外,如前述,藉由使前述粉碎物彼此行化學結合可將前述多孔結構固定化,因此製得之前述多孔質結構雖具有空隙之結構,依舊可維持充分的強度。因此,前述多孔質結構可輕易且簡便地對各種對象物賦予矽烷醇多孔體。具體上,本發明之多孔質結構例如可代替空氣層作為絕熱材、吸音材、再生醫療用支架材、結露防止材、光學構件等使用。因此,本發明之製造方法及藉其製得之塗料例如可有效製造像前言提及之多孔質結構。 As described above, the paint produced by the production method of the present invention contains the pulverized product of the gel-like silicon compound and the pulverized product contains residual silanol groups. Therefore, for example, a coating film is formed by using the coating material, and then the coating The above-mentioned pulverized materials of the film are chemically combined to produce a porous structure with voids. In this way, the porous structure formed by using the paint can perform the same function as the air layer mentioned in the introduction. In addition, as described above, the porous structure can be fixed by chemically bonding the pulverized products to each other. Therefore, although the porous structure obtained has a void structure, it can still maintain sufficient strength. Therefore, the aforementioned porous structure can easily and simply impart a silanol porous body to various objects. Specifically, the porous structure of the present invention can be used as a heat insulating material, a sound absorbing material, a stent material for regenerative medicine, an anti-condensation material, an optical member, etc., instead of the air layer, for example. Therefore, the manufacturing method of the present invention and the coating prepared therefrom can, for example, effectively manufacture the porous structure as mentioned in the introduction.
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| EP3323864A1 (en) * | 2016-11-22 | 2018-05-23 | BASF Coatings GmbH | Optical coating having a low refractive index |
| CN107088512B (en) * | 2017-05-31 | 2020-11-10 | 佛山市东鹏陶瓷有限公司 | Spraying process of nano silicon inorganic coating |
| US11340386B1 (en) * | 2018-12-07 | 2022-05-24 | Facebook Technologies, Llc | Index-gradient structures with nanovoided materials and corresponding systems and methods |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004010424A (en) * | 2002-06-06 | 2004-01-15 | Matsushita Electric Ind Co Ltd | Method for producing porous gel and heat insulating material using the same |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4408009A (en) * | 1982-02-17 | 1983-10-04 | Union Carbide Corporation | Co-condensates of alkyl silicates and alkoxy silanes |
| JPS61250032A (en) * | 1985-04-30 | 1986-11-07 | Hitachi Chem Co Ltd | Preparation of silanol origomer liquid |
| CN1014123B (en) * | 1987-10-12 | 1991-10-02 | 国家机械工业委员会沈阳铸造研究所 | Compound shell-producing technology using silica-sol wash |
| JP4063464B2 (en) * | 1999-12-10 | 2008-03-19 | Agcエスアイテック株式会社 | Scale-like silica particles, curable composition, cured product comprising the same, and method for producing the same |
| JP4938994B2 (en) * | 2005-04-22 | 2012-05-23 | ペンタックスリコーイメージング株式会社 | Silica airgel membrane and manufacturing method thereof |
| CN101007911A (en) * | 2006-01-27 | 2007-08-01 | 章浩龙 | Water-based paint and preparation method thereof |
| US8222352B2 (en) * | 2008-12-24 | 2012-07-17 | Nitto Denko Corporation | Silicone resin composition |
| JP2013060309A (en) * | 2011-09-12 | 2013-04-04 | Achilles Corp | Nanostructured porous body excellent in hydrophobicity |
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2015
- 2015-12-25 WO PCT/JP2015/086365 patent/WO2016104765A1/en not_active Ceased
- 2015-12-25 CN CN202010325596.8A patent/CN111363472B/en active Active
- 2015-12-25 TW TW104143837A patent/TWI691559B/en active
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004010424A (en) * | 2002-06-06 | 2004-01-15 | Matsushita Electric Ind Co Ltd | Method for producing porous gel and heat insulating material using the same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111363472B (en) | 2023-07-04 |
| WO2016104765A1 (en) | 2016-06-30 |
| CN111363472A (en) | 2020-07-03 |
| TW201631071A (en) | 2016-09-01 |
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