[go: up one dir, main page]

TWI690611B - Vacuum deposition chamber - Google Patents

Vacuum deposition chamber Download PDF

Info

Publication number
TWI690611B
TWI690611B TW106123717A TW106123717A TWI690611B TW I690611 B TWI690611 B TW I690611B TW 106123717 A TW106123717 A TW 106123717A TW 106123717 A TW106123717 A TW 106123717A TW I690611 B TWI690611 B TW I690611B
Authority
TW
Taiwan
Prior art keywords
distribution
nozzle
nozzles
distribution tube
substrate
Prior art date
Application number
TW106123717A
Other languages
Chinese (zh)
Other versions
TW201805455A (en
Inventor
班格特史丹分
露博安德率斯
爵伯勒湯瑪士
史奇伯勒佑維
地古坎柏喬斯曼紐
Original Assignee
美商應用材料股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商應用材料股份有限公司 filed Critical 美商應用材料股份有限公司
Publication of TW201805455A publication Critical patent/TW201805455A/en
Application granted granted Critical
Publication of TWI690611B publication Critical patent/TWI690611B/en

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • C23C14/042Coating on selected surface areas, e.g. using masks using masks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12Organic material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • C23C14/243Crucibles for source material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563Gas nozzles
    • C23C16/45578Elongated nozzles, tubes with holes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/16Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

A vacuum deposition chamber is described. The vacuum deposition chamber includes a material deposition apparatus having distribution pipes; and a substrate support for supporting a substrate during deposition, wherein a distance between at least one of the distribution pipes of the material deposition apparatus and the substrate support is less than 250mm.

Description

真空沈積腔室 Vacuum deposition chamber

數個實施例是有關於一種材料沈積配置、一種用於一材料沈積配置之分佈管、具有一材料沈積配置之沈積設備、以及一種用於沈積一材料於一基板上之方法。數個實施例特別是有關於一種用於一真空沈積腔室之材料沈積配置、一種具有一材料沈積配置之真空沈積設備、及一種用於在一真空沈積腔室中沈積一材料於一基板上之方法。 Several embodiments relate to a material deposition configuration, a distribution tube for a material deposition configuration, a deposition apparatus having a material deposition configuration, and a method for depositing a material on a substrate. Several embodiments particularly relate to a material deposition configuration for a vacuum deposition chamber, a vacuum deposition apparatus having a material deposition configuration, and a material for depositing a material on a substrate in a vacuum deposition chamber Method.

有機蒸發器係為用於生產有機發光二極體(organic light-emitting diodes,OLED)之器械。OLEDs係為發光二極體之一種特別形式,在OLEDs中,發光層包括特定之有機化合物之薄膜。OLEDs係使用於製造用於顯示資訊之電視螢幕、電腦螢幕、手機、其他手持裝置等。OLEDs可亦使用來做為一般空間的照明。OLED顯示器可能的顏色、亮度、及視角之範圍係較傳統之液晶顯示器(LCD)大,因為OLED像素係直接地發出光線而不使用背光。因此,OLED顯示器之能量損耗係大量少於傳統之液晶顯示器的能量損耗。再者,OLEDs可製造於撓性基板上係產生更多之應用。典型之OLED顯示器舉例可包括位於兩個電極之間 的數個有機材料層,此些有機材料層全部係沈積於一基板上,以形成具有個別可供能像素之一矩陣顯示面板。OLED一般係置於兩個玻璃面板之間,且玻璃面板之邊緣係密封以封裝OLED於其中。 Organic evaporators are devices used to produce organic light-emitting diodes (OLEDs). OLEDs are a special form of light-emitting diodes. In OLEDs, the light-emitting layer includes a thin film of a specific organic compound. OLEDs are used to manufacture TV screens, computer screens, mobile phones, other handheld devices used to display information, etc. OLEDs can also be used for general space lighting. The range of possible colors, brightness, and viewing angles of an OLED display is larger than that of a conventional liquid crystal display (LCD), because OLED pixels emit light directly without using a backlight. Therefore, the energy loss of OLED displays is much less than that of conventional liquid crystal displays. Furthermore, OLEDs can be manufactured on flexible substrates to produce more applications. A typical example of an OLED display may include between two electrodes Several organic material layers, all of which are deposited on a substrate to form a matrix display panel with individually enabled pixels. The OLED is generally placed between two glass panels, and the edge of the glass panel is sealed to encapsulate the OLED.

製造此種顯示裝置係面臨許多挑戰。OLED顯示器或OLED發光應用包括由數個有機材料形成之堆疊,此些有機材料例如是在真空中蒸發。有機材料係經由遮罩(shadow masks)以接續之方式沈積。為了以高效率製造OLED堆疊,共沈積(co-deposition)或共蒸發(co-evaporation)兩個或多個材料成為混合/摻雜層係有需要的,兩個或多個材料舉例為主體(host)及摻雜劑。再者,許多用以蒸發非常靈敏之有機材料的處理條件係必須考慮。 There are many challenges in manufacturing such display devices. OLED displays or OLED lighting applications include stacks formed of several organic materials, such as organic materials that evaporate in a vacuum. Organic materials are deposited in a continuous manner via shadow masks. In order to manufacture OLED stacks with high efficiency, it is necessary to co-deposition or co-evaporate two or more materials into a mixed/doped layer system. Two or more materials are exemplified as the main body ( host) and dopant. Furthermore, many processing conditions for evaporating very sensitive organic materials must be considered.

為了沈積材料於基板上,材料係加熱直到材料蒸發。再者,舉例來說,為了保持已蒸發材料於一控制溫度或避免已蒸發材料於管中凝結,導引材料至基板的管可進行加熱。當材料蒸發時,材料例如是藉由通過分佈管導引至基板,分佈管具有用於已蒸發材料的出口或噴嘴。在過去數年中,沈積製程的準確性係已經增加,例如是能夠提供越來越小的像素尺寸。然而,遮罩之遮蔽效應(shadowing effects)、已蒸發材料之散佈及類似的情況係讓蒸發製程的準確性和可預測性難以更進一步的增加。 To deposit material on the substrate, the material system is heated until the material evaporates. Furthermore, for example, in order to maintain the evaporated material at a controlled temperature or to avoid condensation of the evaporated material in the tube, the tube guiding the material to the substrate may be heated. When the material evaporates, the material is guided to the substrate, for example, by a distribution tube with an outlet or nozzle for the evaporated material. Over the past few years, the accuracy of the deposition process has increased, for example to provide smaller and smaller pixel sizes. However, the shadowing effects of masks, the spread of evaporated materials, and the like make it difficult to further increase the accuracy and predictability of the evaporation process.

有鑑於上述,此處所述實施例之一目的係提供一種材料沈積配置、一種真空沈積腔室、一種分佈管、及一種方法,用以沈積材料於一基板上來克服此領域中之至少一些問題。 In view of the foregoing, an object of the embodiments described herein is to provide a material deposition configuration, a vacuum deposition chamber, a distribution tube, and a method for depositing material on a substrate to overcome at least some problems in this field .

有鑑於上述,一種真空沈積腔室係提供。數個實施例之其他方面、優點、及特徵係藉由附屬申請專利範圍、說明、及所附之圖式更為清楚。 In view of the above, a vacuum deposition chamber is provided. Other aspects, advantages, and features of several embodiments are made clearer by the appended patent application scope, description, and accompanying drawings.

根據一實施例,提出一種真空沈積腔室。真空沈積腔室包括一材料沈積配置,具有數個分佈管;及一基板支座,用以在沈積期間支撐一基板,其中材料沈積配置之此些分佈管之至少一者與基板支座之間的一距離係少於250mm。 According to an embodiment, a vacuum deposition chamber is proposed. The vacuum deposition chamber includes a material deposition configuration with a plurality of distribution tubes; and a substrate support for supporting a substrate during deposition, wherein at least one of the distribution tubes of the material deposition configuration is between the substrate support The distance is less than 250mm.

數個實施例係針對用於執行所揭露之方法之設備,且設備包括用於執行各所述之方法特徵的設備部件。此些方法特徵可藉由硬體元件、由適合軟體程式化之電腦、由此兩者之任何結合或任何其他方式執行。再者,數個實施例亦針對操作所述之設備的方法。其包括用於執行設備之每一功能的方法特徵。為了對本發明之上述及其他方面有更佳的瞭解,下文特舉較佳實施例,並配合所附圖式,作詳細說明如下: Several embodiments are directed to an apparatus for performing the disclosed method, and the apparatus includes apparatus components for performing the features of each described method. These method features can be performed by hardware components, by a computer suitable for software programming, by any combination of the two, or by any other means. Furthermore, several embodiments are also directed to methods of operating the described devices. It includes method features for performing each function of the device. In order to have a better understanding of the above and other aspects of the present invention, the preferred embodiments are described below in conjunction with the attached drawings, which are described in detail as follows:

100:材料沈積配置 100: Material deposition configuration

100a:第一材料源 100a: the first material source

100b:第二材料源 100b: Second material source

100c:第三材料源 100c: third material source

100d:材料源 100d: material source

101、200:距離 101, 200: distance

102:支座 102: Support

102a:第一材料蒸發器 102a: First material evaporator

102b:第二材料蒸發器 102b: Second material evaporator

102c:第三材料蒸發器 102c: third material evaporator

104:蒸發坩鍋 104: Evaporating crucible

106:分佈管 106: Distribution tube

106a:第一分佈管 106a: the first distribution tube

106b:第二分佈管 106b: Second distribution tube

106c:第三分佈管 106c: Third distribution tube

107、713:開孔 107, 713: opening

108:延伸牆 108: Extension wall

109:牆 109: Wall

110:真空腔室 110: vacuum chamber

111:維護真空腔室 111: Maintain the vacuum chamber

112:對準單元 112: Alignment unit

116:分佈管殼體 116: Distribution tube housing

121:基板 121: substrate

126:基板支座 126: base plate support

131:遮罩框架 131: mask frame

132:遮罩 132: Mask

136:第一方向 136: First direction

201、202、203:縱向軸 201, 202, 203: longitudinal axis

205、207:閥 205, 207: Valve

206:第一噴嘴材料 206: First nozzle material

208:第二噴嘴材料 208: Second nozzle material

210:第一分佈方向 210: first distribution direction

211:第二分佈方向 211: Second distribution direction

212:第三分佈方向 212: Third distribution direction

300:沈積設備 300: deposition equipment

320:線性導件 320: linear guide

322、324、326:牆 322, 324, 326: Wall

352、354、355:箭頭 352, 354, 355: arrows

380:加熱元件 380: Heating element

400:流程圖 400: flow chart

410、420、430、440:方塊 410, 420, 430, 440: blocks

700:噴嘴 700: nozzle

702:蒸發器控制殼體 702: evaporator control housing

703:凸緣單元 703: Flange unit

710:內部中空空間 710: Internal hollow space

712:噴嘴 712: Nozzle

714:開孔長度 714: opening length

715:加熱單元 715: Heating unit

716:開孔尺寸 716: Hole size

717:加熱遮蔽件 717: Heating shield

722:栓 722: Tie

725:外部加熱單元 725: external heating unit

726:中央加熱元件 726: Central heating element

727:遮罩物 727: Mask

732:蒸汽導管 732: Steam duct

800、801:曲線 800, 801: curve

802、803:已蒸發材料 802, 803: evaporated material

804:第一接線 804: first wiring

805:第二接線 805: Second wiring

806:第三接線 806: Third wiring

879:絕熱器 879: Heat insulation

A:區域 A: area

B、C:局部圖 B, C: partial map

為了可詳細地了解數個實施例之上述特徵,簡要摘錄於上之更特有的說明可參照實施例。所附之圖式係有關於數個實施例且說明於下方: 第1a至1f圖繪示根據此處所述實施例之材料沈積配置的示意圖及材料沈積配置的部分、更詳細之示意圖;第2a至2c圖繪示根據此處所述實施例之材料沈積配置之分佈管的示意圖;第3a圖繪示根據此處所述實施例之分佈管與噴嘴之材料分佈的示意圖;第3b圖繪示已知系統之分佈管的材料分佈的示意圖;第3c圖繪示根據此處所述實施例與已知系統之分佈管之材料分佈的比較圖;第4a圖繪示根據此處所述實施例之材料沈積配置之示意圖;第4b圖繪示已知沈積系統之示意圖;第5a及5b圖繪示根據此處所述實施例之材料沈積配置之側視與上視圖;第6a及6b圖根據此處所述實施例之材料沈積配置之側視圖及根據此處所述實施例之材料沈積配置之分佈管及噴嘴之更詳細示意圖;第7a至7d圖繪示根據此處所述實施例之使用於分佈管與材料沈積配置中之噴嘴的示意圖;第8a至8c圖繪示根據此處所述實施例之材料沈積配置與分佈管之示意圖;第9a及9b圖繪示根據此處所述實施例之分佈管之示意圖;第10圖繪示根據此處所述實施例之真空沈積腔室之示意圖;以及 第11圖繪示根據此處所述實施例之用以沈積材料於基板上之方法的流程圖。 In order to understand the above-mentioned features of several embodiments in detail, the more specific description briefly excerpted above can refer to the embodiments. The attached drawings have several embodiments and are described below: FIGS. 1a to 1f show a schematic diagram of a material deposition configuration according to the embodiments described herein and a partial, more detailed schematic diagram of the material deposition configuration; FIGS. 2a to 2c illustrate a material deposition configuration according to the embodiments described herein Schematic diagram of the distribution tube; Figure 3a shows a schematic diagram of the material distribution of the distribution tube and the nozzle according to the embodiments described here; Figure 3b shows a schematic diagram of the material distribution of the distribution tube of the known system; Figure 3c A comparison diagram of the material distribution of the distribution tube according to the embodiment described here and the known system; FIG. 4a shows a schematic diagram of the material deposition configuration according to the embodiment described here; FIG. 4b shows the known deposition system Schematic diagrams; Figures 5a and 5b show side and top views of the material deposition configuration according to the embodiments described herein; Figures 6a and 6b side views of the material deposition configuration according to the embodiments described herein and according to this A more detailed schematic view of the distribution tube and nozzle of the material deposition configuration of the embodiments described above; Figures 7a to 7d show schematic views of the nozzle used in the distribution tube and material deposition configuration according to the embodiments described herein; Figures 8 to 8c show schematic diagrams of the material deposition configuration and distribution tubes according to the embodiments described here; Figures 9a and 9b show schematic diagrams of the distribution tubes according to the embodiments described here; Figure 10 shows the schematic diagrams according to here A schematic diagram of the vacuum deposition chamber of the embodiment; and FIG. 11 shows a flowchart of a method for depositing material on a substrate according to the embodiments described herein.

詳細的參照將以各種實施例來達成,實施例的一或多個例子係繪示在圖式中。在下方圖式之說明中,相同參考編號係意指相同元件。一般來說,僅有有關於個別實施例之相異處係進行說明。各例子係藉由說明的方式提供且不意味為一限制。再者,所說明或敘述而做為一實施例之部分之特徵可用於其他實施例或與其他實施例結合,以取得再其他實施例。此意指本說明包括此些調整及變化。 Detailed reference will be made with various embodiments, one or more examples of the embodiments are shown in the drawings. In the description of the drawings below, the same reference number means the same element. Generally speaking, only the differences between individual embodiments are described. Each example is provided by way of illustration and is not meant as a limitation. Furthermore, the features described or described as part of an embodiment can be used in or combined with other embodiments to obtain yet other embodiments. This means that this description includes such adjustments and changes.

如此處所使用,名稱「流體連通(fluid communication)」可理解為流體連通的兩個元件可經由一連接件交換流體,以讓流體於此兩個元件之間流動。於一例子中,為流體連通之此些元件可包括中空結構,流體可流動通過中空結構。根據一些實施例,為流體連通之此些元件的至少一者可為類管元件。 As used herein, the name "fluid communication" can be understood as two fluid communication elements can exchange fluid through a connecting member to allow fluid flow between the two elements. In one example, such elements in fluid communication may include a hollow structure through which fluid can flow. According to some embodiments, at least one of these elements in fluid communication may be a tube-like element.

再者,在下方說明中,一材料源可理解為提供將沈積於一基板上之一源。特別是,材料源可裝配以用於在真空腔室中提供將沈積於一基板上之材料,真空腔室例如是真空沈積腔室或設備。根據一些實施例,材料源可藉由裝配以蒸發將沈積之材料來提供將沈積於基板上之材料。舉例來說,材料源可包括蒸發器或坩鍋,蒸發器或坩鍋蒸發將沈積於基板上之材料,且特別是 於一方向中釋放已蒸發材料,此方向係朝向基板或進入材料源之分佈管中。於一些實施例中,蒸發器可流體連通於分佈管,以舉例為用以分佈已蒸發材料。 Furthermore, in the following description, a material source can be understood as providing a source to be deposited on a substrate. In particular, the material source may be equipped for providing materials to be deposited on a substrate in a vacuum chamber, such as a vacuum deposition chamber or equipment. According to some embodiments, the material source may provide the material to be deposited on the substrate by assembling to evaporate the material to be deposited. For example, the material source may include an evaporator or crucible that evaporates the material that will be deposited on the substrate, and in particular The evaporated material is released in a direction that is directed towards the substrate or into the distribution tube of the material source. In some embodiments, the evaporator may be in fluid communication with the distribution tube, for example to distribute the evaporated material.

根據此處所述一些實施例,分佈管可理解為用以導引及分佈已蒸發材料之一管。特別是,分佈管可從蒸發器導引已蒸發材料至分佈管中之出口或開孔。線性分佈管可理解為於第一,特別是縱向方向中延伸之一管。於一些實施例中,線性分佈管包括具有圓柱形狀之管,且其中圓柱可具有圓形底部形狀或任何其他適合的底部形狀。 According to some embodiments described herein, a distribution tube may be understood as a tube for guiding and distributing evaporated material. In particular, the distribution tube can guide the evaporated material from the evaporator to the outlet or opening in the distribution tube. A linearly distributed tube can be understood as a tube extending in the first, especially in the longitudinal direction. In some embodiments, the linear distribution tube includes a tube having a cylindrical shape, and wherein the cylinder may have a round bottom shape or any other suitable bottom shape.

此處所指的噴嘴可理解為用以導引一流體的一裝置,特別是用以控制一流體之方向或特性(例如是從噴嘴出現之流體之流速、速度、形狀、及/或壓力)。根據此處所述一些實施例,噴嘴可為用以導引或指引蒸汽之一裝置,蒸汽例如是將沈積於基板上之已蒸發材料的蒸汽。噴嘴可具有用以接收一流體之入口、用以導引流體通過噴嘴之開孔(舉例為鑽孔(bore)或通道)、及用以釋放流體之出口。一般來說,噴嘴之開孔或通道可包括定義之幾何形狀,用以讓流動通過噴嘴之流體達成所需之方向或特性。根據一些實施,噴嘴可為分佈管之部分或可連接於提供已蒸發材料之分佈管且可從分佈管接收已蒸發材料。 The nozzle referred to herein may be understood as a device for guiding a fluid, especially for controlling the direction or characteristics of a fluid (for example, the flow rate, velocity, shape, and/or pressure of the fluid emerging from the nozzle). According to some embodiments described herein, the nozzle may be a device for guiding or directing steam, such as steam of the evaporated material to be deposited on the substrate. The nozzle may have an inlet to receive a fluid, an opening (such as a bore or channel) to guide the fluid through the nozzle, and an outlet to release the fluid. In general, the openings or channels of the nozzle may include defined geometric shapes for the fluid flowing through the nozzle to achieve the desired direction or characteristic. According to some implementations, the nozzle may be part of the distribution tube or may be connected to a distribution tube providing evaporated material and may receive evaporated material from the distribution tube.

根據此處所述實施例,用以於真空腔室內沈積已蒸發材料於基板上之材料沈積配置係提供。根源一些實施例,材料沈積配置可裝配以用於在真空腔室中沈積二或多個已蒸發材料於 基板上。材料沈積配置包括第一材料源,第一材料源包括第一材料蒸發器,第一材料蒸發器裝配以用以蒸發將沈積於基板上之第一材料。根據一些實施例,第一材料可為來自將沈積於基板上之此二或多個材料的第一材料。第一材料源更包括第一分佈管,第一分佈管包括第一分佈管殼體,其中第一分佈管係流體連通於第一材料蒸發器,其中第一材料源更包括位在第一分佈管殼體中的數個第一噴嘴。一般來說,此些第一噴嘴之一或多個噴嘴包括開孔長度及開孔尺寸,其中此些第一噴嘴之此一或多個噴嘴的長度對尺寸比係等同於或大於2:1。材料沈積配置包括第二材料源,第二材料源包括第二材料蒸發器,第二材料蒸發器裝配以用以蒸發將沈積於基板上之第二材料。根據一些實施例,第二材料可為來自將沈積於基板上之此二或多個材料的第二材料。第二材料源更包括第二分佈管,第二分佈管包括第二分佈管殼體,其中第二分佈管係流體連通於第二材料蒸發器。第二材料源更包括位在第二分佈管殼體中的數個第二噴嘴。根據此處所述實施例,此些第一噴嘴之一第一噴嘴與此些第二噴嘴之一第二噴嘴之間的距離係等同於或少於30mm。根據一些實施例,第一材料和第二材料可為相同的材料,或可選擇性為不同的材料。 According to the embodiments described herein, a material deposition configuration for depositing evaporated material on the substrate in the vacuum chamber is provided. In some embodiments, the material deposition configuration can be assembled for depositing two or more evaporated materials in a vacuum chamber On the substrate. The material deposition configuration includes a first material source including a first material evaporator that is equipped to evaporate the first material to be deposited on the substrate. According to some embodiments, the first material may be the first material from the two or more materials to be deposited on the substrate. The first material source further includes a first distribution tube, and the first distribution tube includes a first distribution tube housing, wherein the first distribution tube is in fluid communication with the first material evaporator, wherein the first material source further includes the first distribution tube Several first nozzles in the tube housing. Generally speaking, one or more of the first nozzles includes an opening length and an opening size, wherein the length to size ratio of the one or more nozzles of the first nozzles is equal to or greater than 2:1 . The material deposition configuration includes a second material source including a second material evaporator that is equipped to evaporate the second material to be deposited on the substrate. According to some embodiments, the second material may be the second material from the two or more materials to be deposited on the substrate. The second material source further includes a second distribution tube. The second distribution tube includes a second distribution tube housing, wherein the second distribution tube is in fluid communication with the second material evaporator. The second material source further includes a plurality of second nozzles located in the second distribution tube housing. According to the embodiments described herein, the distance between one of the first nozzles and the second nozzle of the second nozzles is equal to or less than 30 mm. According to some embodiments, the first material and the second material may be the same material, or may be different materials selectively.

第1a圖繪示根據此處所述實施例之材料沈積配置100之側視圖。如第1a圖中所示之材料沈積配置的實施例可包括具有第一材料蒸發器102a之第一材料源、具有第二材料蒸發器102b之第二材料源、及具有第三材料蒸發器102c之第三材料 源。於一實施例中,第一材料蒸發器102a、第二材料蒸發器102b、及第三材料蒸發器102c之各者可提供不同的材料。於另一實施例中,各材料蒸發器可提供相同的材料,或一部分之材料蒸發器可提供相同的材料,而另一部分的材料蒸發器提供不同的材料。根據一些實施例,第一材料蒸發器102a、第二材料蒸發器102b及第三材料蒸發器102c可為坩鍋,裝配以用以蒸發將沈積於基板上之材料。第一材料蒸發器102a、第二材料蒸發器102b、及第三材料蒸發器102c係分別流體連通於第一分佈管106a、第二分佈管106b、及第三分佈管106c。由此些材料蒸發器之一者所蒸發之材料可從材料蒸發器釋放且流入各自的分佈管中。 Figure 1a shows a side view of a material deposition arrangement 100 according to embodiments described herein. An embodiment of the material deposition configuration shown in Figure 1a may include a first material source with a first material evaporator 102a, a second material source with a second material evaporator 102b, and a third material evaporator 102c The third material source. In an embodiment, each of the first material evaporator 102a, the second material evaporator 102b, and the third material evaporator 102c can provide different materials. In another embodiment, each material evaporator may provide the same material, or a part of the material evaporator may provide the same material, and another part of the material evaporator may provide a different material. According to some embodiments, the first material evaporator 102a, the second material evaporator 102b, and the third material evaporator 102c may be crucibles equipped to evaporate materials to be deposited on the substrate. The first material evaporator 102a, the second material evaporator 102b, and the third material evaporator 102c are in fluid communication with the first distribution tube 106a, the second distribution tube 106b, and the third distribution tube 106c, respectively. The material evaporated by one of these material evaporators can be released from the material evaporator and flow into the respective distribution pipes.

如第1圖中可見,第一分佈管106a、第二分佈管106b、及第三分佈管106c之各者包括分佈管殼體,分佈管殼體包括數個噴嘴712。藉由此些噴嘴,已蒸發材料係釋放且導引至將塗佈之基板(未繪示)。根據一些實施例,噴嘴712可為分佈管之一組合部分,例如是形成於分佈管殼體中的一開孔、或可藉由連接於分佈管殼體之噴嘴提供,用以執行已定義之製程,舉例為導引已蒸發材料朝向將塗佈之基板。於一例子中,噴嘴可藉由鎖固、插置(plugging)、或微縮(shrinking)製程連接於分佈管。於一實施例中,噴嘴可為可交換地連接於材料沈積配置之分佈管。 As can be seen in FIG. 1, each of the first distribution tube 106 a, the second distribution tube 106 b, and the third distribution tube 106 c includes a distribution tube housing, and the distribution tube housing includes a plurality of nozzles 712. With these nozzles, the evaporated material is released and directed to the substrate to be coated (not shown). According to some embodiments, the nozzle 712 may be a combined part of the distribution tube, such as an opening formed in the distribution tube housing, or may be provided by a nozzle connected to the distribution tube housing to perform the defined The process, for example, guides the evaporated material towards the substrate to be coated. In one example, the nozzle can be connected to the distribution pipe through a locking, plugging, or shrinking process. In one embodiment, the nozzle may be a distribution tube exchangeably connected to the material deposition configuration.

第1b圖繪示如第1a圖中所示之第三分佈管106c之區域A的放大圖。如第1b圖中所示之局部圖係繪示第三分佈管106c及第三分佈管106c之此些噴嘴的一個噴嘴712。噴嘴712 係提供開孔713、或通道,已蒸發材料可通過開孔713或通道。噴嘴712之開孔713係提供開孔長度714,如第1b圖中所示。根據一些實施例,開孔長度714可沿著噴嘴之縱向或長度軸量測,特別是在對應於離開噴嘴之平均流體方向的一方向中。於一實施例中,噴嘴之開孔長度714可實質上垂直於分佈管的縱向(或線性)方向。 FIG. 1b shows an enlarged view of the area A of the third distribution tube 106c shown in FIG. 1a. The partial view shown in FIG. 1b shows the third distribution pipe 106c and one nozzle 712 of these nozzles of the third distribution pipe 106c. Nozzle 712 The opening 713 or channel is provided, and the evaporated material can pass through the opening 713 or channel. The opening 713 of the nozzle 712 provides an opening length 714, as shown in Figure 1b. According to some embodiments, the opening length 714 may be measured along the longitudinal or length axis of the nozzle, especially in a direction corresponding to the average fluid direction leaving the nozzle. In one embodiment, the opening length 714 of the nozzle may be substantially perpendicular to the longitudinal (or linear) direction of the distribution tube.

名稱「實質上垂直(substantially perpendicular)」可理解為包括從絕對(strict)垂直配置偏差最多15°。根據一些實施例,在下述說明中以「實質上(substantially)」表示之其他名稱可包括從已指示之角度配置偏差最多15°,或從一尺寸偏差約15%。 The name "substantially perpendicular" can be understood to include a deviation from a strict vertical configuration of up to 15°. According to some embodiments, other names denoted "substantially" in the following description may include a configuration deviation of up to 15° from the angle indicated, or a deviation of about 15% from a dimension.

第1c圖繪示材料沈積配置100之前視圖,此前視圖可對應於如第1a圖中所示的材料沈積配置,但旋轉約90°。第一材料蒸發器102a、第二材料蒸發器102b、及第三材料蒸發器102c係分別流體連通於第一分佈管106a、第二分佈管106b、及第三分佈管及106c。噴嘴712之開孔於前視圖中係為可見。不同之第一分佈管106a、第二分佈管106b、及第三分佈管106c之噴嘴712係彼此相距距離200。根據此處所述實施例,此些噴嘴之間的距離可代表性少於50mm,更代表性少於30mm,且甚至更代表性少於25mm。 Figure 1c shows a front view of the material deposition configuration 100. The front view may correspond to the material deposition configuration as shown in Figure 1a, but rotated about 90°. The first material evaporator 102a, the second material evaporator 102b, and the third material evaporator 102c are in fluid communication with the first distribution tube 106a, the second distribution tube 106b, and the third distribution tube and 106c, respectively. The opening of the nozzle 712 is visible in the front view. The nozzles 712 of different first distribution tubes 106a, second distribution tubes 106b, and third distribution tubes 106c are separated by a distance of 200 from each other. According to the embodiments described herein, the distance between such nozzles may be representatively less than 50 mm, more representatively less than 30 mm, and even more representatively less than 25 mm.

根據一些實施例,不同之第一分佈管106a、第二分佈管106b、及第三分佈管106c之噴嘴712之間的距離係從各自 之噴嘴的開孔的中心點量測。於一例子中,噴嘴之開孔的中心點可定義為開孔的幾何中心點。在開孔為圓形之情況中,圓形之中心點係與在邊緣上的點等距之點。舉例來說,如果噴嘴之開孔具有對稱形狀,開孔的中心點可說明成在對稱運動中處於不變的點。舉例來說,正方形、矩形、菱形、或平行四邊形之中心點係位於對角線相交處,中心點為旋轉對稱之固定點。類似地,橢圓形的中心點係位於軸相交處。根據一些實施例,中心點可理解為形狀之重心。 According to some embodiments, the distances between the nozzles 712 of the first distribution tube 106a, the second distribution tube 106b, and the third distribution tube 106c are different from The center point of the opening of the nozzle is measured. In an example, the center point of the opening of the nozzle can be defined as the geometric center point of the opening. In the case where the opening is circular, the center point of the circle is a point equidistant from the point on the edge. For example, if the opening of the nozzle has a symmetrical shape, the center point of the opening can be described as a point that is constant during symmetrical movement. For example, the center point of a square, rectangle, diamond, or parallelogram is located at the intersection of diagonal lines, and the center point is a fixed point of rotational symmetry. Similarly, the center point of the ellipse is located at the intersection of the axes. According to some embodiments, the center point may be understood as the center of gravity of the shape.

於一些實施例中,在分佈管之此些噴嘴之間的距離200可為實質上水平距離。舉例來說,第一分佈管106a、第二分佈管106b、及第三分佈管106c可在實質上垂直方向中延伸。此些噴嘴可具有蒸發方向,也就是實質上水平之噴嘴釋放已蒸發材料之方向。根據一些實施例,在不同分佈管之此些噴嘴之間的實質上水平距離可理解為包括從絕對水平配置偏差約15°。 In some embodiments, the distance 200 between such nozzles of the distribution tube may be a substantially horizontal distance. For example, the first distribution tube 106a, the second distribution tube 106b, and the third distribution tube 106c may extend in a substantially vertical direction. Such nozzles may have a direction of evaporation, that is, a direction in which the substantially horizontal nozzle releases evaporated material. According to some embodiments, the substantially horizontal distance between such nozzles of different distribution pipes may be understood to include a deviation of about 15° from the absolute horizontal configuration.

根據一些實施例,此些噴嘴之間的距離可說明成在不同分佈管彼此之間的距離,舉例為從分佈管之縱向軸進行量測。於一實施例中,分佈管彼此相距距離200。 According to some embodiments, the distance between these nozzles can be described as the distance between different distribution tubes, for example, measured from the longitudinal axis of the distribution tubes. In one embodiment, the distribution pipes are separated from each other by a distance of 200.

第1d至1f圖繪示在第1c圖之前視圖中的局部圖B之實施例的示意圖。在第1d至1f圖中,噴嘴712之開孔尺寸716係標註。噴嘴之開孔尺寸可決定於噴嘴之形狀。於一實施例中,開孔尺寸可理解為開孔之一維度,開孔之此維度不是開孔長度。根據一些實施例,開孔尺寸可為開孔之剖面的最小維度,特別是 在噴嘴之出口的剖面的最小維度(噴嘴之出口係位於已蒸發材料離開噴嘴處)。 FIGS. 1d to 1f are schematic diagrams of embodiments of the partial view B in the view before FIG. 1c. In figures 1d to 1f, the opening size 716 of the nozzle 712 is indicated. The opening size of the nozzle can be determined by the shape of the nozzle. In one embodiment, the size of the opening can be understood as a dimension of the opening, and this dimension of the opening is not the length of the opening. According to some embodiments, the size of the opening may be the smallest dimension of the section of the opening, in particular The smallest dimension in the profile of the nozzle outlet (the nozzle outlet is where the evaporated material leaves the nozzle).

第1d圖繪示噴嘴開孔及開孔尺寸716之一例子的示意圖,其中開孔尺寸係對應於剖面,特別是開孔直徑。第1e圖繪示一例子,其中噴嘴開孔具有類橢圓形之形狀且開孔之尺寸係由開孔之剖面的最小維度定義。第1f圖繪示一例子,其中噴嘴開孔具有延長圓形之形狀,其中開孔的尺寸係由開孔之剖面的最小維度定義。具有通常知識者將了解第1a至1f圖所示之實施例僅為例子,且不限定應用為噴嘴開孔的尺寸、形狀、及長度之所示例子、或不限定應用為分佈管與材料源之配置之所示例子,如將詳細地見於下文。 FIG. 1d is a schematic diagram showing an example of the nozzle opening and the opening size 716, wherein the opening size corresponds to the cross section, especially the opening diameter. Figure 1e shows an example in which the nozzle opening has an oval-like shape and the size of the opening is defined by the smallest dimension of the cross section of the opening. Figure 1f shows an example in which the nozzle opening has an elongated circular shape, and the size of the opening is defined by the smallest dimension of the cross section of the opening. Those with ordinary knowledge will understand that the embodiments shown in Figures 1a to 1f are only examples, and are not limited to the examples shown in the size, shape, and length of the nozzle opening, or to the distribution tube and material source. The illustrated example of the configuration is described in detail below.

根據此處所述實施例,第一分佈管之各噴嘴可具有2:1或更大之開孔長度對尺寸比,或僅有第一分佈管的部分之噴嘴可具有所述之長度對尺寸比。根據一些實施例,如此所述之材料沈積配置的第二及/或第三分佈管可亦包括一或多個噴嘴,具有2:1或更大之開孔長度對尺寸比。 According to the embodiments described herein, each nozzle of the first distribution tube may have a 2:1 or greater opening length to size ratio, or only a portion of the nozzle of the first distribution tube may have the length to size ratio. According to some embodiments, the second and/or third distribution tubes of the material deposition configuration as described above may also include one or more nozzles with an opening length to size ratio of 2:1 or greater.

根據可與此處所述其他實施例結合之一些實施例,分佈管可具有實質上三角形剖面。第2a圖繪示分佈管106之剖面的一例子的示意圖。分佈管106具有牆322、326、及324,牆322、326、及324係環繞內部中空空間710。牆322係提供於噴嘴712所設置的材料源之出口側。分佈管之剖面可說明成本質上三角形,也就是分佈管之主要區域係對應於三角形之一部分及/或 分佈管之剖面可為具有圓角(rounded corners)及/或切角(cut-off corners)之三角形。如第2a圖中所示,在出口側之三角形的角落係舉例為切角。 According to some embodiments that may be combined with other embodiments described herein, the distribution tube may have a substantially triangular cross-section. FIG. 2a is a schematic diagram showing an example of the cross section of the distribution tube 106. FIG. The distribution pipe 106 has walls 322, 326, and 324, and the walls 322, 326, and 324 surround the internal hollow space 710. The wall 322 is provided on the outlet side of the material source provided by the nozzle 712. The profile of the distribution pipe can indicate that the cost is triangular, that is, the main area of the distribution pipe corresponds to a part of the triangle and/or The profile of the distribution tube may be a triangle with rounded corners and/or cut-off corners. As shown in Figure 2a, the corner of the triangle on the exit side is exemplified as a chamfer.

分佈管之出口側的寬度,舉例為如第2a圖中所示之剖面中的牆322的維度係由箭頭352標註。再者,分佈管106之剖面的其他維度係由箭頭354和355所標註。根據此處所述實施例,分佈管之出口側的寬度係剖面之最大維度之30%或更少,舉例為由箭頭354及355所標註之較大維度的30%或更少。有鑑於分佈管的維度及形狀,相鄰分佈管106之噴嘴712可提供在較小的距離。此較小的距離係改善彼此相鄰進行蒸發之有機材料的混合。 The width of the outlet side of the distribution pipe is exemplified by the dimension of the wall 322 in the section shown in FIG. 2a by the arrow 352. Furthermore, the other dimensions of the profile of the distribution pipe 106 are marked by arrows 354 and 355. According to the embodiment described herein, the width of the outlet side of the distribution pipe is 30% or less of the maximum dimension of the cross section, for example, 30% or less of the larger dimension marked by arrows 354 and 355. In view of the dimensions and shape of the distribution tubes, the nozzles 712 of adjacent distribution tubes 106 can be provided at a small distance. This smaller distance improves the mixing of organic materials that evaporate next to each other.

第2b圖繪示兩個分佈管係彼此相鄰之一實施例之示意圖。因此,具有如第2b圖中所示之兩個分佈管的材料沈積配置可蒸發彼此相鄰之兩個有機材料。此種材料沈積配置可亦意指材料沈積陣列。如第2b圖中所示,分佈管106之剖面的形狀係讓相鄰分佈管的噴嘴靠近彼此擺置。根據可與此處所述其他實施例結合之一些實施例,第一分佈管之第一噴嘴和第二分佈管之第二噴嘴可具有30mm或以下之距離,例如是從5mm至25mm。更特別是,第一出口或噴嘴至第二出口或噴嘴之距離可為10mm或以下。 FIG. 2b is a schematic diagram of an embodiment in which two distribution pipes are adjacent to each other. Therefore, the material deposition configuration with two distribution tubes as shown in Figure 2b can evaporate two organic materials adjacent to each other. Such a material deposition configuration may also mean a material deposition array. As shown in FIG. 2b, the shape of the cross section of the distribution tube 106 is such that the nozzles of adjacent distribution tubes are placed close to each other. According to some embodiments that can be combined with other embodiments described herein, the first nozzle of the first distribution tube and the second nozzle of the second distribution tube may have a distance of 30 mm or less, for example, from 5 mm to 25 mm. More particularly, the distance from the first outlet or nozzle to the second outlet or nozzle may be 10 mm or less.

根據此處所述一些實施例,在第一分佈管之第一噴嘴和第二分佈管之第二噴嘴之間的距離可量測為各自之噴嘴的縱 向軸之間的最小距離。於一例子中,在各自之噴嘴的縱向軸之間的最小距離係在噴嘴的出口(也就是已蒸發材料離開噴嘴之位置)。第2c圖繪示如第2b圖中所示之配置的局部圖C之示意圖。於第2c圖中放大的局部圖C係繪示兩個第一分佈管106a及第二分佈管106b之一例子,其中在此些噴嘴之間的距離200係在第一分佈管106a之第一噴嘴的縱向軸201和第二分佈管106b之第二噴嘴的縱向軸202之間的各自噴嘴之出口量測。根據一些實施例,此處所指之噴嘴之縱向軸係沿著噴嘴之長度方向延伸。 According to some embodiments described herein, the distance between the first nozzle of the first distribution pipe and the second nozzle of the second distribution pipe can be measured as the longitudinal length of the respective nozzle The minimum distance between the axes. In one example, the minimum distance between the longitudinal axes of the respective nozzles is at the outlet of the nozzle (that is, where the evaporated material leaves the nozzle). FIG. 2c is a schematic diagram of a partial view C of the configuration shown in FIG. 2b. The enlarged partial view C in FIG. 2c shows an example of two first distribution tubes 106a and a second distribution tube 106b, wherein the distance 200 between these nozzles is the first of the first distribution tubes 106a The outlet of each nozzle is measured between the longitudinal axis 201 of the nozzle and the longitudinal axis 202 of the second nozzle of the second distribution pipe 106b. According to some embodiments, the longitudinal axis of the nozzle referred to herein extends along the length of the nozzle.

根據此處所述實施例,如此處所述之材料沈積配置可使用於高準確性製程中,高準確性製程例如是有機發光二極體(OLED)生產製程。第3a及4a圖係繪示根據此處所述實施例之材料沈積配置之功效的示意圖。第3b及4b圖係繪示已知材料沈積配置之比較例子的功效的示意圖。於第3a圖中,已蒸發材料從根據此處所述實施例之材料沈積配置釋放之分佈的測試資料係繪示出來。曲線800係顯示已蒸發材料從具有2:1或較高之長度對尺寸比之噴嘴釋放之實驗結果。第3a圖之例子繪示出已蒸發材料之分佈係大約仿造cos6形狀。如第3b圖中所示之與已知材料沈積配置之比較繪示出傳統材料沈積配置之分佈係對應於由曲線801所示之cos1形狀。曲線800與已知系統之曲線801之間的差異係實質上為已蒸發材料之羽狀物(plume)的寬度及在羽狀物中之已蒸發材料之集中分佈,曲線800由根據此處所述實施例之材料沈積配置產生。舉例來說,如果遮罩係使用於沈積材料於基板 上,例如是在OLED生產系統中,遮罩可為具有像素開孔之像素遮罩,像素開孔係具有約50μm x 50μm或甚至以下之尺寸,例如是像素開孔具有約30μm或以下、或約20μm之剖面的維度(舉例為剖面之最小尺寸)。於一例子中,像素遮罩可具有約40μm之厚度。考慮遮罩之厚度和像素開孔之尺寸,遮蔽效應可能出現,在遮罩中之像素開孔之牆係遮蔽像素開孔。根據此處所述實施例之材料沈積配置及/或分佈管及/或噴嘴可有助於減少遮蔽效應。 According to the embodiments described herein, the material deposition configuration as described herein can be used in high-accuracy processes, such as organic light-emitting diode (OLED) production processes. Figures 3a and 4a are schematic diagrams illustrating the effectiveness of the material deposition configuration according to the embodiments described herein. Figures 3b and 4b are schematic diagrams showing the efficacy of a comparative example of known material deposition configurations. In Fig. 3a, the test data of the distribution of the evaporated material released from the material deposition configuration according to the embodiments described herein is shown. Curve 800 shows the experimental results of the evaporated material being released from a nozzle with a length to size ratio of 2:1 or higher. The example in Figure 3a illustrates that the distribution of evaporated material is approximately cos 6- shaped. The comparison with the known material deposition configuration as shown in Figure 3b shows that the distribution of the conventional material deposition configuration corresponds to the shape of cos 1 shown by curve 801. The difference between the curve 800 and the curve 801 of the known system is essentially the width of the plume of the evaporated material and the concentrated distribution of the evaporated material in the plume. The material deposition configuration of the embodiment described is generated. For example, if the mask is used to deposit material on a substrate, for example in an OLED production system, the mask may be a pixel mask with pixel openings, the pixel openings having a thickness of about 50 μm x 50 μm or even below The size is, for example, a dimension in which the pixel opening has a cross section of about 30 μm or less, or about 20 μm (for example, the minimum size of the cross section). In one example, the pixel mask may have a thickness of about 40 μm. Considering the thickness of the mask and the size of the pixel opening, the shadowing effect may occur. The wall of the pixel opening in the mask is to mask the pixel opening. Material deposition configurations and/or distribution tubes and/or nozzles according to embodiments described herein can help reduce shadowing effects.

可藉由使用根據此處所述實施例之材料沈積配置之蒸發來達成的高定向性(directionality)係改善已蒸發材料之使用性,因為更多已蒸發材料實際上係到達基板(及例如為不是基板之上方及下方的區域)。 The high directionality that can be achieved by using the evaporation of the material deposition configuration according to the embodiments described herein improves the usability of the evaporated material because more evaporated material actually reaches the substrate (and for example is Not the area above and below the substrate).

第3c圖繪示在一遮罩之一像素中的已蒸發材料之分佈且繪示出三條不同之線的示意圖。全部三條線係表示在噴嘴和基板之間的已定義距離中已蒸發材料之分佈。於一例子中,在噴嘴出口(已蒸發材料離開噴嘴之位置)和基板或基板支座之間的距離可為250mm或更少,例如是約200mm,或約150mm。第一接線804係表示已知之材料沈積配置所提供的一遮罩之一像素開孔中的已蒸發材料的分佈。第一接線804之分佈係對應於類似cos1分佈。利用根據此處所述實施例之材料沈積配置或分佈管,已蒸發材料之分佈可對應於類似cos6分佈,如由第二接線805所示。特別是,第二接線805之斜率陡於第一接線804之斜率。具有通常知識者從第3c圖可見,以cos6分佈係比cos1分佈在遮 罩之像素開孔的邊緣有較佳填滿。第三接線806係表示利用根據此處所述實施例之材料沈積配或分佈管之實驗測試結果。第三接線806係實質上仿造具有已蒸發材料之類似cos6分佈的第二接線805。當使用根據此處所述實施例之材料沈積配置或分佈管,遮蔽效應可減少。 Figure 3c shows a schematic diagram of the distribution of evaporated material in one pixel of a mask and three different lines. All three lines represent the distribution of evaporated material in the defined distance between the nozzle and the substrate. In one example, the distance between the nozzle outlet (where evaporated material leaves the nozzle) and the substrate or substrate support may be 250 mm or less, for example, about 200 mm, or about 150 mm. The first line 804 represents the distribution of evaporated material in a pixel opening of a mask provided by a known material deposition configuration. The distribution of the first wiring 804 corresponds to a similar cos 1 distribution. With the material deposition configuration or distribution tube according to the embodiments described herein, the distribution of the evaporated material may correspond to a similar cos 6 distribution, as shown by the second wiring 805. In particular, the slope of the second wiring 805 is steeper than the slope of the first wiring 804. Those with ordinary knowledge can see from Figure 3c that the distribution of cos 6 is better than cos 1 at the edge of the pixel opening of the mask. The third wiring 806 represents the experimental test results using the material deposition distribution or distribution tube according to the embodiments described herein. The third wire 806 is essentially a second wire 805 with a cos 6 distribution similar to the evaporated material. When using a material deposition configuration or distribution tube according to the embodiments described herein, the shadowing effect can be reduced.

第4a圖繪示根據此處所述實施例之範例性包括第一材料源100a、第二材料源100b、及第三材料源100c之材料沈積配置的示意圖。材料沈積配置可為如此處實施例中所述之材料沈積配置。第4a圖之沈積系統更繪示出將以已蒸發材料塗佈的基板121及用以遮蔽基板121之遮罩132。第4a圖繪示已蒸發材料802如何離開(exits)且脫離(leaves)材料沈積配置之第一材料源100a、第二材料源100b、及第三材料源100c,特別是材料沈積配置之第一材料源100a、第二材料源100b、及第三材料源100c之噴嘴。根據此處所述實施例,已蒸發材料802係在離開材料沈積配置之第一材料源100a、第二材料源100b、及第三材料源100c且進入沈積腔室之真空空間時散佈。具有2:1或更大之長度對尺寸比的噴嘴係讓已蒸發材料具有有限制之散佈,有限制之散佈舉例為包含約30°或更少之角度。繪示於第4b圖中之與已知沈積系統之比較係已蒸發材料803包含約60°之角度。 FIG. 4a is a schematic diagram illustrating an exemplary material deposition configuration including a first material source 100a, a second material source 100b, and a third material source 100c according to the embodiments described herein. The material deposition configuration may be the material deposition configuration as described in the embodiments herein. The deposition system in FIG. 4a further illustrates the substrate 121 to be coated with evaporated material and the mask 132 for shielding the substrate 121. FIG. 4a shows how the evaporated material 802 exits and leaves the first material source 100a, the second material source 100b, and the third material source 100c of the material deposition configuration, especially the first material deposition configuration The nozzles of the material source 100a, the second material source 100b, and the third material source 100c. According to the embodiments described herein, the evaporated material 802 is dispersed as it leaves the first material source 100a, the second material source 100b, and the third material source 100c of the material deposition configuration and enters the vacuum space of the deposition chamber. Nozzles with a length to size ratio of 2:1 or greater allow a limited spread of evaporated material. Examples of limited spread include angles of about 30° or less. The comparison with the known deposition system shown in Figure 4b is that the evaporated material 803 contains an angle of about 60°.

如於第3a、3b、4a、及4b圖中所示之例子可見,根據此處所述實施例之材料沈積配置可提供已蒸發材料之較小的分佈散佈,且提供更精確導引已蒸發材料到達基板,且特別是以 高準確性來更精準到達用於塗佈基板之遮罩開孔。 As can be seen in the examples shown in Figures 3a, 3b, 4a, and 4b, the material deposition configuration according to the embodiments described herein can provide a smaller distribution of evaporated material and provide more accurate guidance of evaporated The material reaches the substrate, and in particular High accuracy to reach the mask opening for coating substrate more accurately.

以少於30mm之距離排列分佈管之噴嘴係更提供選擇來混合不同之第一材料源100a、第二材料源100b、及第三材料源100c之不同材料。藉由使用特別形狀之分佈管,例如是如第4a圖中範例性所示之類似三角形之形狀,在材料沈積配置之此些噴嘴之間減少距離可更改善。 Nozzles that arrange the distribution tubes at a distance of less than 30 mm also provide an option to mix different materials of different first material sources 100a, second material sources 100b, and third material sources 100c. By using a specially shaped distribution tube, such as a triangle-like shape as exemplarily shown in Figure 4a, reducing the distance between these nozzles in the material deposition configuration can be more improved.

具有類似cos6分佈之已蒸發材料可提供使用較小之遮罩開孔且改善將於基板上塗佈之較小之結構的準確性,例如是用於OLED產品之像素。 Evaporated materials with a similar cos 6 distribution can provide the use of smaller mask openings and improve the accuracy of smaller structures to be coated on substrates, such as pixels for OLED products.

根據一些實施例,用以在真空腔室中沈積已蒸發材料於基板上之材料沈積配置係提供。根據一些實施例,材料沈積配置可裝配以用於在真空腔室中沈積兩個或多個已蒸發材料於基板上。材料沈積配置包括第一材料源,第一材料源包括第一材料蒸發器,裝配以用於蒸發將沈積於基板上之第一材料。根據一些實施例,第一材料可為將沈積於基板上之兩個或多個材料的第一材料。第一材料源更包括第一分佈管,第一分佈管包括第一分佈管殼體,其中第一分佈管係流體連通於第一材料蒸發器。再者,第一材料源包括位於第一分佈管殼體中之數個第一噴嘴,其中此些第一噴嘴之一或多個噴嘴包括開孔長度和開孔尺寸,且係裝配以提供第一分佈方向。此些第一噴嘴之此一或多個噴嘴的長度對尺寸比係等同於或大於2:1。材料沈積配置更包括第二材料源,第二材料源包括第二材料蒸發器,裝配以蒸發將沈積於基板上之 第二材料。根據一些實施例,第二材料可為將沈積於基板上之兩個或多個材料之第二材料。第二材料源更包括第二分佈管。第二分佈管包括第二分佈管殼體,其中第二分佈管係流體連通於第二材料蒸發器。第二材料源更包括位於第二分佈管殼體中之數個第二噴嘴,其中一或多個第二噴嘴係裝配以提供第二分佈方向。根據可與此處所述其他實施例結合之此處所述數個實施例,此些第一噴嘴之此一或多個噴嘴之第一分佈方向和此些第二噴嘴之此一或多個噴嘴之第二分佈方向係彼此平行排列,或自平行排列偏差最多5°排列。根據一些實施例,第一材料和第二材料可為相同材料,或可選擇性為不同材料。 According to some embodiments, a material deposition configuration for depositing evaporated material on the substrate in the vacuum chamber is provided. According to some embodiments, the material deposition configuration may be assembled for depositing two or more evaporated materials on the substrate in the vacuum chamber. The material deposition configuration includes a first material source that includes a first material evaporator that is configured to evaporate the first material to be deposited on the substrate. According to some embodiments, the first material may be the first material of two or more materials to be deposited on the substrate. The first material source further includes a first distribution tube. The first distribution tube includes a first distribution tube housing, wherein the first distribution tube is in fluid communication with the first material evaporator. Furthermore, the first material source includes a plurality of first nozzles located in the housing of the first distribution tube, wherein one or more of the first nozzles include an opening length and an opening size, and are assembled to provide a first One distribution direction. The length-to-size ratio of the one or more nozzles of the first nozzles is equal to or greater than 2:1. The material deposition configuration further includes a second material source, the second material source includes a second material evaporator, which is equipped to evaporate the material to be deposited on the substrate Second material. According to some embodiments, the second material may be a second material of two or more materials to be deposited on the substrate. The second material source further includes a second distribution tube. The second distribution pipe includes a second distribution pipe housing, wherein the second distribution pipe is in fluid communication with the second material evaporator. The second material source further includes a plurality of second nozzles located in the second distribution tube housing, wherein one or more second nozzles are assembled to provide a second distribution direction. According to several embodiments described herein that can be combined with other embodiments described herein, the first distribution direction of the one or more nozzles of the first nozzles and the one or more of the second nozzles The second distribution directions of the nozzles are arranged parallel to each other, or the deviation from the parallel arrangement is at most 5°. According to some embodiments, the first material and the second material may be the same material, or may be different materials selectively.

第5a圖繪示一材料沈積配置之示意圖,此材料沈積配置具有實質上平行排列之在第一分佈管殼體中之噴嘴的第一分佈方向和在第二分佈管殼體中之噴嘴之第二分佈方向。範例性繪示於第5a圖中之材料沈積配置係繪示第一材料源100a和第二材料源100b。各第一材料源100a及第二材料源100b分別包括第一材料蒸發器102a及第二材料蒸發器102b。於一例子中,各材料蒸發器可提供不同材料。於另一實施例中,各材料蒸發器可提供相同材料,或部分之材料蒸發器可提供相同材料,而另一部分之材料蒸發器係提供不同材料。根據此處所述實施例,第一材料源100a包括第一分佈管106a,且第二材料源100b包括第二分佈管106b。第一和第二分佈管各具有分佈管殼體,噴嘴712係配置在分佈管殼體中。特別是,第一分佈管包括數個第一噴嘴且第 二分佈管包括數個第二噴嘴,用以從各自的分佈管殼體朝向將塗佈之基板釋放已蒸發材料。 FIG. 5a is a schematic diagram of a material deposition configuration having a first distribution direction of nozzles arranged in a substantially parallel arrangement in a first distribution tube housing and a first distribution direction of nozzles in a second distribution tube housing Two distribution directions. The exemplary material deposition configuration shown in FIG. 5a shows the first material source 100a and the second material source 100b. Each of the first material source 100a and the second material source 100b includes a first material evaporator 102a and a second material evaporator 102b, respectively. In one example, each material evaporator can provide different materials. In another embodiment, each material evaporator can provide the same material, or part of the material evaporator can provide the same material, and another part of the material evaporator can provide different materials. According to the embodiments described herein, the first material source 100a includes a first distribution tube 106a, and the second material source 100b includes a second distribution tube 106b. The first and second distribution pipes each have a distribution pipe casing, and the nozzle 712 is arranged in the distribution pipe casing. In particular, the first distribution pipe includes several first nozzles and the first The two distribution tubes include several second nozzles for releasing the evaporated material from the respective distribution tube shells toward the substrate to be coated.

根據此處所述實施例,第一分佈管及/或第二分佈管之一或多個噴嘴可具有為2:1或更大之噴嘴的長度對尺寸比,例如是2.5:1、3:1、5:1或甚至大於5:1。噴嘴開孔之尺寸和長度可理解成上述有關於第1a至1f圖詳細之說明。於一些實施例中,第一分佈管之一或多個噴嘴係提供第一分佈方向且第二分佈管之一或多個噴嘴係提供第二分佈方向。 According to the embodiments described herein, one or more nozzles of the first distribution tube and/or the second distribution tube may have a length to size ratio of nozzles of 2:1 or greater, for example 2.5:1, 3: 1, 5:1 or even greater than 5:1. The size and length of the nozzle opening can be understood as described above with reference to Figures 1a to 1f. In some embodiments, one or more nozzles of the first distribution tube provide a first distribution direction and one or more nozzles of the second distribution tube provide a second distribution direction.

根據此處所述實施例,噴嘴之分佈方向可理解為噴嘴之平均分佈方向。於一些實施例中,平均分佈方向可實質上對應於已蒸發材料之羽狀物中之一接線,已蒸發材料之羽狀物係從噴嘴朝向將塗佈之基板釋放,特別是平均分佈方向可實質上對應於沿著已蒸發材料之集中到達在已蒸發材料之羽狀物中之最大者之一接線。根據一些實施例,噴嘴之平均分佈方向可理解為對應至已蒸發材料之羽狀物之幾何中心線,已蒸發材料之羽狀物係從噴嘴朝向將沈積之基板釋放。於一些實施例中,蒸汽羽狀物之中心線可說明成對應於包括已蒸發材料之幾何重心之接線,以及在噴嘴之長度軸或縱向軸上之點,舉例為噴嘴之出口之點。根據再其他實施例,噴嘴之平均分佈方向可說明成沿著具有噴嘴出口及將塗佈基板之間的最短距離的接線延伸,特別是說明成沿著具有在噴嘴出口之一點及將塗佈基板之間的最短距離的接線延伸,噴嘴出口之此點係位於噴嘴之長度軸或縱向軸上。 According to the embodiments described herein, the distribution direction of the nozzles can be understood as the average distribution direction of the nozzles. In some embodiments, the average distribution direction may substantially correspond to one of the plumes of evaporated material, the plume of evaporated material is released from the nozzle toward the substrate to be coated, especially the average distribution direction may be Substantially corresponds to the wiring along the concentration of evaporated material to one of the largest of the plumes of evaporated material. According to some embodiments, the average distribution direction of the nozzle may be understood to correspond to the geometric centerline of the plume of evaporated material, the plume of evaporated material is released from the nozzle toward the substrate to be deposited. In some embodiments, the centerline of the steam plume can be illustrated as corresponding to the line including the geometric center of gravity of the evaporated material, and the point on the length or longitudinal axis of the nozzle, such as the outlet point of the nozzle. According to still other embodiments, the average distribution direction of the nozzles can be described as extending along the line with the shortest distance between the nozzle outlet and the substrate to be coated, in particular, along the line with the nozzle outlet and the substrate to be coated The shortest distance between the wires extends, and the point of the nozzle outlet is located on the length axis or longitudinal axis of the nozzle.

第5b圖繪示根據一些實施例之包括第一材料源100a及第二材料源100b之材料沈積配置的上視圖。如第5a及5b圖中之例子中可見,第一分佈管106a之噴嘴712係提供第一分佈方向210且第二分佈管106b之噴嘴712係提供第二分佈方向211。一般來說,第一分佈管中與第二分佈管中之噴嘴係排列,使得第一分佈方向和第二分佈方向係彼此平行。根據一些實施例,第一分佈方向和第二分佈方向可從絕對平行排列偏差最多5°,例如是從絕對平行排列偏差約3°或約2°。根據一些實施例,如第5a與5b圖中標註之第一分佈方向210與第二分佈方向211可具有約30mm或更少之距離於彼此之間。 Figure 5b illustrates a top view of a material deposition configuration including a first material source 100a and a second material source 100b according to some embodiments. As can be seen in the examples in FIGS. 5a and 5b, the nozzle 712 of the first distribution tube 106a provides the first distribution direction 210 and the nozzle 712 of the second distribution tube 106b provides the second distribution direction 211. Generally speaking, the nozzles in the first distribution tube and the second distribution tube are arranged so that the first distribution direction and the second distribution direction are parallel to each other. According to some embodiments, the first distribution direction and the second distribution direction may deviate from the absolute parallel arrangement by at most 5°, for example, by about 3° or about 2° from the absolute parallel arrangement. According to some embodiments, the first distribution direction 210 and the second distribution direction 211 as marked in FIGS. 5a and 5b may have a distance of about 30 mm or less between each other.

如上已說明,繪示於第5a和5b圖中之材料沈積配置的第一分佈管和第二分佈管可具有類似三角形之形狀。第6a和6b圖繪示實質上為三角形的材料沈積配置之示意圖,在材料沈積配置中,第一分佈管和第二分佈管之噴嘴之分佈方向係實質上彼此平行。 As described above, the first distribution tube and the second distribution tube of the material deposition configuration shown in FIGS. 5a and 5b may have a triangle-like shape. FIGS. 6a and 6b are schematic diagrams showing a substantially triangular material deposition configuration. In the material deposition configuration, the distribution directions of the nozzles of the first distribution tube and the second distribution tube are substantially parallel to each other.

第6a圖繪示一實施例之剖面圖,於此實施例中係提供具有第一分佈管106a之第一材料源,具有第二分佈管106b之第二材料源以及具有第三分佈管106c之第三材料源。根據一些實施例,此些分佈管可裝配有加熱元件380和絕熱器879,用以改善加熱效率和避免已蒸發材料在分佈管中凝結。蒸發器控制殼體702係提供而相鄰於此些分佈管且經由絕熱器879連接此些分佈管。在第一分佈管106a、第二分佈管106b、及第三分佈管106c 之上方的箭頭(當於投射之平面中看見時)係繪示已蒸發有機材料離開第一分佈管106a、第二分佈管106b、及第三分佈管106c。此些分佈管之各自噴嘴的平均分佈方向係以參考符號210、211、及212標註。如於第6a圖中可見,不同分佈管之分佈方向係實質上平行。 FIG. 6a shows a cross-sectional view of an embodiment. In this embodiment, a first material source having a first distribution tube 106a, a second material source having a second distribution tube 106b, and a third distribution tube 106c are provided Third material source. According to some embodiments, such distribution pipes may be equipped with heating elements 380 and heat insulators 879 to improve heating efficiency and avoid condensation of evaporated material in the distribution pipes. The evaporator control housing 702 is provided adjacent to the distribution pipes and connected to the distribution pipes via a heat insulator 879. In the first distribution pipe 106a, the second distribution pipe 106b, and the third distribution pipe 106c The arrow above (when seen in the projected plane) shows the evaporated organic material leaving the first distribution tube 106a, the second distribution tube 106b, and the third distribution tube 106c. The average distribution directions of the nozzles of these distribution pipes are marked with reference symbols 210, 211, and 212. As can be seen in Figure 6a, the distribution directions of the different distribution tubes are substantially parallel.

此三個第一分佈管106a、第二分佈管106b、及第三分佈管106c之噴嘴712的局部圖及簡圖係繪示於第6b圖中。範例性繪示的此三個噴嘴712具有長度軸或縱向軸201、202、203。噴嘴712可從第一分佈管106a、第二分佈管106b、及第三分佈管106c於第一分佈方向210、第二分佈方向211、及第三分佈方向212朝向將塗佈之基板(未繪示)導引已蒸發材料。如第6b圖中所示的實施例中,此三個分佈方向係彼此平行,或從絕對平行排列可偏差最多5°。 The partial diagrams and schematic diagrams of the nozzles 712 of the three first distribution pipes 106a, the second distribution pipes 106b, and the third distribution pipes 106c are shown in FIG. 6b. The three nozzles 712 shown by way of example have longitudinal or longitudinal axes 201, 202 and 203. The nozzle 712 can be directed from the first distribution tube 106a, the second distribution tube 106b, and the third distribution tube 106c in the first distribution direction 210, the second distribution direction 211, and the third distribution direction 212 to the substrate to be coated (not shown) (Show) guide the evaporated material. As in the embodiment shown in Fig. 6b, the three distribution directions are parallel to each other, or may deviate from the absolute parallel arrangement by up to 5°.

根據此處所述實施例,例如是如此處所指之第一、第二及第三分佈管的不同分佈管可流體連接於不同蒸發器,舉例在三個分佈管之情況中三個不同之蒸發器。於一些實施例中,不同分佈管可流體連通於相同形式之蒸發器,但蒸發不同材料。舉例來說,三個不同成份可藉由流體連通於三個蒸發器之三個分佈管提供。於一例子中,如此處所述之材料沈積配置可使用來生產OLEDs。已蒸發材料可包括用於生產OLEDs之三個成份。 According to the embodiments described here, for example, the different distribution pipes of the first, second and third distribution pipes referred to here can be fluidly connected to different evaporators, for example in the case of three distribution pipes three different evaporations Device. In some embodiments, different distribution tubes may be in fluid communication with the same form of evaporator, but evaporate different materials. For example, three different components can be provided by three distribution tubes in fluid communication with three evaporators. In one example, a material deposition configuration as described herein can be used to produce OLEDs. The evaporated material can include three components used to produce OLEDs.

使用根據此處所述實施例之不同噴嘴之分佈方向為平行排列,且使用具有2:1或較大之長度對尺寸比的噴嘴可有助 於改善已蒸發材料在從噴嘴釋放之特性之一致性(uniformity)及可預測性。舉例來說,實質上平行於另一、或相鄰之已蒸發材料的已蒸發材料之方向可讓已蒸發材料對遮罩及/或基板具有常態且一致的影響。於一例子中,不同分佈管之不同成份可對遮罩及/或基板具有實質上相同之衝擊角(impact angle),特別是對遮罩及/或基板實質上垂直之衝擊角。塗佈一或多個成份的製造可利用根據此處所述實施例之材料沈積配置以更精準的方式執行。再者,當不同材料源在分佈方向之間具有已定義角度時,具有平行排列之分佈方向的材料源可減少舉例為在已知系統中所付出之固定及計算努力。再者,如果不同成份係使用於不同材料源中,根據此處所述實施例之包括上述平行排列之分佈方向之材料沈積配置可均勻混合不同成份。 The distribution directions of different nozzles according to the embodiments described herein are arranged in parallel, and the use of nozzles with a length to size ratio of 2:1 or greater may be helpful To improve the uniformity and predictability of the characteristics of the evaporated material when it is released from the nozzle. For example, the direction of the evaporated material that is substantially parallel to another, or adjacent, evaporated material can allow the evaporated material to have a normal and consistent effect on the mask and/or substrate. In one example, different components of different distribution tubes may have substantially the same impact angle on the mask and/or substrate, especially the impact angle on the mask and/or substrate that is substantially perpendicular. The manufacturing of coating one or more components can be performed in a more precise manner using the material deposition configuration according to the embodiments described herein. Furthermore, when different material sources have a defined angle between the distribution directions, the material sources with parallelly arranged distribution directions can reduce the fixed and computational effort exemplified in known systems. Furthermore, if different components are used in different material sources, according to the embodiments described herein, the material deposition configuration including the above-mentioned parallel arrangement of the distribution direction can uniformly mix the different components.

根據一些實施例,用以於真空腔室中沈積已蒸發材料於基板上之分佈管係提供。分佈管包括分佈管殼體以及噴嘴,噴嘴位於分佈管殼體中。噴嘴包括開孔長度與開孔尺寸,其中噴嘴之長度對尺寸比係等同於或大於2:1。根據可與此處所述其他實施例結合之一些實施例,噴嘴包括一材料,此材料對已蒸發有機材料係為化學惰性。於一例子中,已蒸發有機材料可代表性具有約150℃及約650℃之間的溫度,更代表性約100℃及500℃之間的溫度。 According to some embodiments, a distribution tube for depositing evaporated material on the substrate in the vacuum chamber is provided. The distribution pipe includes a distribution pipe casing and a nozzle, and the nozzle is located in the distribution pipe casing. The nozzle includes the length of the opening and the size of the opening, wherein the length to size ratio of the nozzle is equal to or greater than 2:1. According to some embodiments that can be combined with other embodiments described herein, the nozzle includes a material that is chemically inert to the evaporated organic material. In one example, the evaporated organic material may typically have a temperature between about 150°C and about 650°C, more typically a temperature between about 100°C and 500°C.

第7a至7d圖繪示根據此處所述實施例之分佈管之噴嘴的例子的示意圖。如第7a至7d圖中所示之噴嘴700包括開 孔713(或通道或鑽孔713),用以導引已蒸發材料通過噴嘴。根據此處所述實施例,噴嘴700具有開孔長度714及開孔尺寸716。此處所述實施例中的噴嘴之長度對尺寸比可為2:1或更大,舉例如上所述。名稱「開孔長度」和「開孔尺寸」可如上述有關於1a至1f圖之說明理解。 7a to 7d are schematic diagrams showing examples of nozzles of distribution pipes according to the embodiments described herein. The nozzle 700 shown in FIGS. 7a to 7d includes A hole 713 (or channel or bore 713) is used to guide the evaporated material through the nozzle. According to the embodiments described herein, the nozzle 700 has an opening length 714 and an opening size 716. The length-to-dimension ratio of the nozzle in the embodiment described here may be 2:1 or greater, as exemplified above. The names "opening length" and "opening size" can be understood as described above in relation to the drawings 1a to 1f.

第7a圖繪示包括第一噴嘴材料206及第二噴嘴材料208之噴嘴的示意圖。舉例來說,第一噴嘴材料206可為具有熱傳導數值大於21W/mK之材料,舉例為銅。於一些實施例中,第二噴嘴材料208可提供於開孔或通道713之內側且可對已蒸發有機材料為化學惰性。舉例來說,第二噴嘴材料可選自鉭(Ta)、鈮(Nb)、鈦(Ti)、類鑽塗層(DLC)、不鏽鋼、石英玻璃及石墨。如第7a圖中之實施例中可見,第二噴嘴材料208可提供成在通道713之內側的薄塗層。 FIG. 7a is a schematic diagram of a nozzle including a first nozzle material 206 and a second nozzle material 208. FIG. For example, the first nozzle material 206 may be a material with a thermal conductivity value greater than 21 W/mK, such as copper. In some embodiments, the second nozzle material 208 may be provided inside the opening or channel 713 and may be chemically inert to the evaporated organic material. For example, the second nozzle material may be selected from tantalum (Ta), niobium (Nb), titanium (Ti), diamond-like coating (DLC), stainless steel, quartz glass, and graphite. As can be seen in the embodiment in Figure 7a, the second nozzle material 208 may be provided as a thin coating inside the channel 713.

第7b圖繪示具有第一噴嘴材料206和第二噴嘴材料208之一實施例的示意圖。如第7b圖中所示的噴嘴的例子係以第一部分和第二部分組成,第一部分係由第一噴嘴材料206(具有例如是大於21W/mk之熱傳導數值)所製成,第二部分係由第二噴嘴材料208製成,第二噴嘴材料208可對已蒸發有機材料為化學惰性。於一例子中,第一和第二噴嘴材料可選自有關於第7a圖之說明。如第7b圖中可見,第二噴嘴材料208係為噴嘴之一部分,且特別是不只是內部通道側之一塗層。 FIG. 7b shows a schematic diagram of an embodiment having a first nozzle material 206 and a second nozzle material 208. FIG. The example of a nozzle as shown in figure 7b is composed of a first part and a second part, the first part is made of a first nozzle material 206 (having a heat conduction value of, for example, greater than 21 W/mk), and the second part is Made from a second nozzle material 208, which may be chemically inert to the evaporated organic material. In an example, the first and second nozzle materials can be selected from the descriptions regarding FIG. 7a. As can be seen in Figure 7b, the second nozzle material 208 is part of the nozzle, and in particular is not just a coating on the side of the internal channel.

根據一些實施例,第二噴嘴材料之厚度可代表性在 一些奈米到數個微米之一範圍中。於一例子中,第二噴嘴材料在噴嘴開孔之厚度可代表性在約10nm至約50μm之間,更代表性在約100nm至約50μm之間,且甚至更代表性在約500nm至約50μm之間。於一例子中,第二噴嘴材料之厚度可為約10μm。 According to some embodiments, the thickness of the second nozzle material may be representative of Some nanometers are in the range of a few microns. In one example, the thickness of the second nozzle material at the nozzle opening may be representatively between about 10 nm and about 50 μm, more representatively between about 100 nm and about 50 μm, and even more representatively between about 500 nm and about 50 μm between. In one example, the thickness of the second nozzle material may be about 10 μm.

第7c圖繪示噴嘴712之一實施例的示意圖,其中噴嘴712係以第一噴嘴材料製成,第一噴嘴材料具有大於分佈管之熱傳導率的熱傳慮率或高於21W/mk之熱傳導率,此噴嘴可連接於分佈管。於此處所述之實施例中,第一噴嘴材料206對已蒸發有機材料係為惰性。於一例子中,第一噴嘴材料可選自Ta、Nb、Ti、DLC或石墨。 FIG. 7c shows a schematic diagram of an embodiment of a nozzle 712, wherein the nozzle 712 is made of a first nozzle material, the first nozzle material has a heat transfer rate greater than that of the distribution tube or a heat transfer rate higher than 21 W/mk The nozzle can be connected to the distribution pipe. In the embodiment described herein, the first nozzle material 206 is inert to the evaporated organic material. In one example, the first nozzle material may be selected from Ta, Nb, Ti, DLC, or graphite.

第7d圖繪示根據此處所述實施例之如第7a圖中所示之噴嘴的示意圖。在開孔713中可見第二噴嘴材料208,而噴嘴712之外側係顯示出第一噴嘴材料206。 FIG. 7d shows a schematic view of the nozzle shown in FIG. 7a according to the embodiment described herein. The second nozzle material 208 can be seen in the opening 713, and the first nozzle material 206 is shown on the outside of the nozzle 712.

根據此處所述一些實施例,噴嘴之開孔或通道可具有代表性約1mm至約10mm之尺寸、更代表性約1mm至約6mm之尺寸,且甚至更代表性2mm至約5mm之尺寸,已蒸發材料係在蒸發製程期間通過噴嘴之開孔或通道,以到達將塗佈之基板。根據一些實施例,通道或開孔之尺寸可意指剖面之最小尺寸,舉例為通道或開孔之直徑。於一實施例中,開孔或通道之尺寸係於噴嘴之出口進行量測。根據可與此處所述其他實施例結合之此處所述之一些實施例,開孔或通道可於公差區域H7中製造,舉例為以具有約10μm至18μm之公差製造。 According to some embodiments described herein, the opening or channel of the nozzle may have a size of about 1 mm to about 10 mm, more typically about 1 mm to about 6 mm, and even more typically 2 mm to about 5 mm, The evaporated material passes through the openings or channels of the nozzle during the evaporation process to reach the substrate to be coated. According to some embodiments, the size of the channel or opening may mean the smallest dimension of the cross section, such as the diameter of the channel or opening. In one embodiment, the size of the opening or channel is measured at the outlet of the nozzle. According to some of the embodiments described herein that can be combined with other embodiments described herein, the openings or channels can be manufactured in the tolerance region H7, for example with a tolerance of about 10 μm to 18 μm.

根據此處所述一些實施例,用以根據此處所述實施例之材料沈積配置或分佈管之噴嘴可包括螺紋,用以重複地連接噴嘴於分佈管且解除噴嘴對分佈管之連接,材料沈積配置用以於真空沈積腔室中沈積材料於基板上。於一些實施例中,具有用以連接於分佈管之螺紋的噴嘴可具有內螺紋及/或外螺紋,用以能夠反覆連接噴嘴於分佈管,特別是不需要損壞分佈管或噴嘴。舉例來說,具有已定義特性之第一噴嘴可連接於用以第一製程的分佈管。在第一製程完成之後,第一噴嘴可解除連接且第二噴嘴可連接於用以第二製程的分佈管。如果第一製程將再度執行,第二噴嘴可從分佈管解除連接且第一噴嘴可再度連接於分佈管,用以執行第一製程。根據一些實施例,分佈管可亦包括螺紋,用以噴嘴至分佈管之可交換連接,例如是藉由裝配(fitting)於噴嘴之螺紋的方式。 According to some embodiments described herein, the nozzle used for the material deposition configuration or the distribution tube according to the embodiment described herein may include threads to repeatedly connect the nozzle to the distribution tube and release the nozzle from the distribution tube. The deposition configuration is used to deposit material on the substrate in the vacuum deposition chamber. In some embodiments, the nozzle having a thread for connecting to the distribution tube may have an internal thread and/or an external thread to enable the nozzle to be repeatedly connected to the distribution tube, in particular, without damaging the distribution tube or the nozzle. For example, a first nozzle with defined characteristics can be connected to a distribution tube for the first process. After the first process is completed, the first nozzle can be disconnected and the second nozzle can be connected to the distribution tube for the second process. If the first process is to be executed again, the second nozzle can be disconnected from the distribution pipe and the first nozzle can be connected to the distribution pipe again to perform the first process. According to some embodiments, the distribution tube may also include threads for the interchangeable connection of the nozzle to the distribution tube, for example, by fitting to the threads of the nozzle.

根據此處所述一些實施例,如此處所述實施例中之材料沈積配置及如此處所述實施例中之分佈管可見於第8a至8c圖中。分佈管106可流體連通於坩鍋,用以分佈藉由坩鍋所提供之已蒸發材料。分佈管可舉例為延長的立方體,具有加熱單元715。蒸發坩鍋可為水庫(reservoir),用於利用外部加熱單元725之將蒸發之有機材料。根據可與此處所述其他實施例結合之典型實施例,分佈管106係提供接線源。根據此處所述一些實施例,材料沈積配置100更包括數個開孔及/或出口,用以朝向基板釋放已蒸發材料,例如是沿著至少一接線排列之噴嘴。 According to some embodiments described herein, the material deposition configuration in the embodiments described herein and the distribution tubes in the embodiments described herein can be seen in FIGS. 8a to 8c. The distribution tube 106 may be in fluid communication with the crucible for distributing the evaporated material provided by the crucible. The distribution tube may be exemplified as an elongated cube with a heating unit 715. The evaporation crucible may be a reservoir for using the external heating unit 725 to evaporate the organic material. According to typical embodiments that can be combined with other embodiments described herein, the distribution tube 106 provides a wiring source. According to some embodiments described herein, the material deposition configuration 100 further includes several openings and/or outlets for releasing evaporated material toward the substrate, such as nozzles arranged along at least one wiring.

根據可與此處所述其他實施例結合之一些實施例。分佈管之噴嘴可適用於在一方向中釋放已蒸發材料,此方向係不同於分佈管之長度方向,且例如是實質上垂直於分佈管之長度方向之一方向。根據一些實施例,出口(舉例為噴嘴)係排列,以具有+- 20°於水平之主要蒸發方向。根據一些特定實施例,蒸發方向可略微地向上定向,舉例為從水平向上15°之範圍中,例如是向上3°至7°。因此,基板可稍微傾斜,以實質上垂直於蒸發方向。在具有傾斜之基板的情況下,可減少產生不需要的粒子。然而,根據此處所述實施例的噴嘴及材料沈積配置可亦使用於沈積設備中,此沈積設備係裝配以用於沈積材料於水平定向之基板上。 According to some embodiments that can be combined with other embodiments described herein. The nozzle of the distribution tube can be adapted to release the evaporated material in a direction that is different from the longitudinal direction of the distribution tube and is, for example, a direction substantially perpendicular to the longitudinal direction of the distribution tube. According to some embodiments, the outlets (for example, nozzles) are arranged so as to have a main evaporation direction of +-20° to the horizontal. According to some specific embodiments, the evaporation direction may be slightly upwardly oriented, for example in the range of 15° upward from horizontal, for example 3° to 7° upward. Therefore, the substrate may be slightly inclined to be substantially perpendicular to the evaporation direction. In the case of an inclined substrate, the generation of unnecessary particles can be reduced. However, the nozzle and material deposition configurations according to the embodiments described herein can also be used in deposition equipment that is equipped for depositing materials on a horizontally oriented substrate.

於一例子中,分佈管106之長度至少對應於在沈積設備中之將沈積基板的高度。於許多情況中,分佈管106之長度將至少10%或甚至20%長於將沈積基板之高度。具有長於基板之高度的分佈管,在基板之上端及/或基板之下端係可提供均勻沈積。 In one example, the length of the distribution tube 106 corresponds at least to the height of the substrate to be deposited in the deposition equipment. In many cases, the length of the distribution tube 106 will be at least 10% or even 20% longer than the height of the substrate to be deposited. A distribution tube having a height that is longer than the substrate can provide uniform deposition at the upper end of the substrate and/or the lower end of the substrate.

根據可與此處所述其他實施例結合之一些實施例,分佈管之長度可為1.3m或以上,舉例為2.5m或以上。根據一配置,如第8a圖中所示,蒸發坩鍋104係提供於分佈管106之下端。有機材料係於蒸發坩鍋104中蒸發。有機材料之蒸汽係在分佈管之底部進入分佈管106,且本質上偏側邊地(sideways)導引通過分佈管中之噴嘴朝向舉例為本質上垂直之基板。 According to some embodiments that can be combined with other embodiments described herein, the length of the distribution tube may be 1.3 m or more, for example 2.5 m or more. According to a configuration, as shown in Fig. 8a, the evaporation crucible 104 is provided at the lower end of the distribution tube 106. The organic material is evaporated in the evaporation crucible 104. The vapor of the organic material enters the distribution pipe 106 at the bottom of the distribution pipe, and is essentially guided sideways through the nozzles in the distribution pipe toward an essentially vertical substrate.

第8b圖繪示材料源之一部分的放大圖,其中分佈管 106係連接於蒸發坩鍋104。凸緣單元703係提供,凸緣單元703係裝配以提供蒸發坩鍋104和分佈管106之間的連接。舉例來說,蒸發坩鍋及分佈管係提供而作為分離單元,而可分離且連接或組裝於凸緣單元,舉例是為了進行材料源之操作。 Figure 8b shows an enlarged view of a part of the material source, where the distribution tube 106 Series is connected to the evaporation crucible 104. The flange unit 703 is provided, and the flange unit 703 is assembled to provide the connection between the evaporation crucible 104 and the distribution tube 106. For example, the evaporation crucible and the distribution tube are provided as a separation unit, which can be separated and connected or assembled to the flange unit, for example, for the operation of the material source.

分佈管106具有內部中空空間710。加熱單元715可提供以加熱分佈管。因此,分佈管106可加熱至一溫度,使得有機材料之蒸汽係不凝結於分佈管106之牆的內部,有機材料之蒸汽藉由蒸發坩鍋104提供。 The distribution pipe 106 has an internal hollow space 710. The heating unit 715 may be provided to heat the distribution pipe. Therefore, the distribution tube 106 can be heated to a temperature so that the vapor of the organic material does not condense inside the wall of the distribution tube 106, and the vapor of the organic material is provided by the evaporation crucible 104.

舉例來說,分佈管可保持在一溫度,此溫度係代表性約1℃至約20℃,更代表性約5℃至約20℃,且甚至更代表性約10℃至約15℃高於將沈積於基板上之材料的蒸發溫度。兩個或多個加熱遮蔽件717係提供於分佈管106之管周圍。 For example, the distribution tube may be maintained at a temperature that is representatively about 1°C to about 20°C, more representatively about 5°C to about 20°C, and even more representatively about 10°C to about 15°C above The evaporation temperature of the material deposited on the substrate. Two or more heating shields 717 are provided around the pipe of the distribution pipe 106.

在操作期間,分佈管106可在凸緣單元703連接於蒸發坩鍋104。蒸發坩鍋104係裝配以接收將蒸發之有機材料且蒸發有機材料。根據一些實施例,將蒸發之材料可包括氧化銦錫(ITO)、NPD、Alq3、喹吖啶酮(Quinacridone)、Mg/AG、星狀(starburst)材料、及類似物之至少一者。第8b圖繪示穿過蒸發坩鍋104之殼體的剖面圖。再填充開孔係提供在舉例為蒸發坩鍋之上部,再填充開孔可使用栓(plug)722、蓋(lid)、覆蓋件或類似物關閉,用以關閉蒸發坩鍋104之內部空間(enclosure)。 During operation, the distribution tube 106 may be connected to the evaporation crucible 104 at the flange unit 703. The evaporation crucible 104 is equipped to receive the organic material to be evaporated and to evaporate the organic material. According to some embodiments, the material to be evaporated may include at least one of indium tin oxide (ITO), NPD, Alq 3 , Quinacridone, Mg/AG, starburst material, and the like. FIG. 8b shows a cross-sectional view through the casing of the evaporation crucible 104. The refill opening is provided above the evaporation crucible as an example. The refill opening can be closed with a plug 722, lid, cover or the like to close the internal space of the evaporation crucible 104 ( enclosure).

外部加熱單元725係提供於蒸發坩鍋104之內部空間中。外部加熱單元可沿著蒸發坩鍋104之牆的至少一部分延 伸。根據可與此處所述其他實施例結合之一些實施例,一或多個中央加熱元件726可額外或選擇性提供。第8b圖繪示兩個中央加熱元件726。根據一些應用,蒸發坩鍋104可更包括遮罩物727。 The external heating unit 725 is provided in the internal space of the evaporation crucible 104. The external heating unit may extend along at least a portion of the wall of the evaporation crucible 104 stretch. According to some embodiments, which may be combined with other embodiments described herein, one or more central heating elements 726 may be additionally or selectively provided. Figure 8b shows two central heating elements 726. According to some applications, the evaporation crucible 104 may further include a shield 727.

根據一些實施例,如有關於第8a至8b圖範例性繪示,蒸發坩鍋104係提供於分佈管106之下側。根據可與此處所述其他實施例結合之再其他實施例,蒸汽導管732可於分佈管之中央部提供於分佈管106,或可於分佈管之下端及分佈管之上端之間的另一位置提供於分佈管106。第8c圖繪示具有分佈管106及提供於分佈管之中央部的蒸汽導管732的材料源之一例子之示意圖。有機材料之蒸汽係產生於蒸發坩鍋104中且導引通過蒸汽導管732至分佈管106之中央部。蒸汽係經由數個噴嘴712離開分佈管106,此些噴嘴712可為有關於第7a至7d圖所說明之噴嘴。根據可與此處所述其他實施例結合之再其他實施例,兩個或多個蒸汽導管732可沿著分佈管106之長度提供於不同位置。於一些實施例中,蒸汽導管732可連接於一個蒸發坩鍋104或數個蒸發坩鍋104。舉例來說,各蒸汽導管732可具有對應之蒸發坩鍋104。或者,蒸發坩鍋104可流體連通於兩個或多個蒸汽導管732,此兩個或多個蒸汽導管732係連接於分佈管106。 According to some embodiments, as exemplarily shown in FIGS. 8a to 8b, the evaporation crucible 104 is provided below the distribution tube 106. According to still other embodiments that can be combined with other embodiments described herein, the steam duct 732 may be provided at the central portion of the distribution pipe at the distribution pipe 106, or may be another between the lower end of the distribution pipe and the upper end of the distribution pipe Location is provided on distribution tube 106. FIG. 8c is a schematic diagram showing an example of a material source having a distribution pipe 106 and a steam duct 732 provided at the center of the distribution pipe. The steam of the organic material is generated in the evaporation crucible 104 and is guided through the steam duct 732 to the central portion of the distribution pipe 106. The steam leaves the distribution pipe 106 through several nozzles 712, which may be the nozzles described in relation to FIGS. 7a to 7d. According to still other embodiments that can be combined with other embodiments described herein, two or more steam conduits 732 can be provided at different locations along the length of the distribution tube 106. In some embodiments, the steam conduit 732 may be connected to one evaporation crucible 104 or several evaporation crucibles 104. For example, each steam duct 732 may have a corresponding evaporation crucible 104. Alternatively, the evaporation crucible 104 may be in fluid communication with two or more steam conduits 732, which are connected to the distribution pipe 106.

如此處所述,分佈管可為中空圓柱。名稱圓柱可理解為一般接受之具有圓形底部形狀及圓形頂部形狀,以及連接頂部圓形和底部圓形之曲面區域或殼。根據可與此處所述其他實施例結合之其他額外或選擇性實施例,名稱圓柱可在數感 (mathematical sense)中更理解為具有任意底部形狀及一致之頂部形狀,以及連接頂部形狀和底部形狀之曲面區域或殼。因此,圓柱不一定必須為圓形剖面。取而代之,底部表面和頂部表面可具有不同於圓形之形狀。 As described herein, the distribution tube may be a hollow cylinder. The name cylinder can be understood as generally accepted as having a round bottom shape and a round top shape, and a curved area or shell connecting the top circle and the bottom circle. According to other additional or alternative embodiments that can be combined with other embodiments described herein, the name cylinder can be (mathematical sense) is more understood as having any bottom shape and a consistent top shape, and a curved area or shell connecting the top shape and the bottom shape. Therefore, the cylinder does not necessarily have to have a circular cross-section. Instead, the bottom surface and the top surface may have shapes other than circular.

第9a及9b圖繪示根據此處所述實施例之用於材料沈積配置之分佈管106之實施例的剖面圖。根據一些實施例,分佈管106包括分佈管殼體116,分佈管殼體116係包括第一殼體材料,或者係以第一殼體材料製成。如第9a及9b圖中之實施例中可見,分佈管係沿著第一方向136延伸的線性分佈管。 Figures 9a and 9b show cross-sectional views of an embodiment of a distribution tube 106 for a material deposition configuration according to embodiments described herein. According to some embodiments, the distribution tube 106 includes a distribution tube housing 116 that includes or is made of a first housing material. As can be seen in the embodiments in Figures 9a and 9b, the distribution tube is a linear distribution tube extending along the first direction 136.

第9a圖繪示具有數個開孔107之分佈管之示意圖,此些開孔107係沿著在分佈管殼體中之第一方向延伸配置。於一些實施例中,分佈管中之開孔的牆109可理解為根據此處所述實施例之噴嘴。於一例子中,開孔107之牆109可包括第一噴嘴材料(舉例為以第一噴嘴材料塗佈),其中第一噴嘴材料之熱傳導數值可於一些例子中大於第一分佈管材料之熱傳導率或大於21W/mK。於一例子中,開孔107之牆109可以銅覆蓋。於一實施例中,牆可以銅及第二噴嘴材料覆蓋,第二噴嘴材料例如是對已蒸發有機材料係為化學惰性之一材料。 FIG. 9a is a schematic diagram of a distribution tube having a plurality of openings 107. The openings 107 are extended along a first direction in the distribution tube housing. In some embodiments, the perforated wall 109 in the distribution pipe can be understood as a nozzle according to the embodiments described herein. In an example, the wall 109 of the opening 107 may include a first nozzle material (for example, coated with the first nozzle material), wherein the thermal conductivity value of the first nozzle material may be greater than the thermal conductivity of the first distribution tube material in some examples Rate or greater than 21W/mK. In one example, the wall 109 of the opening 107 may be covered with copper. In one embodiment, the wall may be covered with copper and a second nozzle material, such as a material that is chemically inert to the evaporated organic material system.

第9b圖繪示根據此處所述實施例之分佈管之一實施例的示意圖。繪示於第9b圖中之分佈管106包括開孔107,開孔107提供而具有延伸牆108。一般來說,開孔107之延伸牆108係沿著實質上垂直於分佈管殼體116之第一方向136的方向延 伸。根據一些實施例,開孔107之延伸牆108可從分佈管以任何適合之角度延伸。於一些實施例中,分佈管殼體116之開孔107之延伸牆108可提供根據此處所述實施例之分佈管106的噴嘴。舉例來說,延伸牆108可包括第一噴嘴材料,或可以第一噴嘴材料製成。根據一些實施例,延伸牆108可在內側塗佈有第一及/或第二噴嘴材料,例如是對已蒸發有機材料係為化學惰性之材料。 FIG. 9b is a schematic diagram of an embodiment of a distribution tube according to the embodiments described herein. The distribution tube 106 shown in Fig. 9b includes an opening 107 provided with an extension wall 108. Generally speaking, the extension wall 108 of the opening 107 extends along a direction substantially perpendicular to the first direction 136 of the distribution tube housing 116 stretch. According to some embodiments, the extension wall 108 of the opening 107 may extend from the distribution pipe at any suitable angle. In some embodiments, the extension wall 108 of the opening 107 of the distribution tube housing 116 may provide the nozzle of the distribution tube 106 according to the embodiments described herein. For example, the extension wall 108 may include the first nozzle material, or may be made of the first nozzle material. According to some embodiments, the extension wall 108 may be coated with the first and/or second nozzle material on the inside, for example, a material that is chemically inert to the evaporated organic material.

於一些實施例中,延伸牆108係提供用於固定噴嘴於分佈管殼體116之固定輔助,噴嘴舉例為如第8a至8d圖中範例性繪示之噴嘴。根據一些實施例,延伸牆108可提供用以鎖固噴嘴於分佈管殼體116之螺紋。 In some embodiments, the extension wall 108 provides a fixing aid for fixing the nozzle to the distribution tube housing 116. The nozzle is exemplarily illustrated in FIGS. 8a to 8d. According to some embodiments, the extension wall 108 may provide threads for locking the nozzle to the distribution tube housing 116.

根據可與此處所述其他實施例結合之一些實施例,此處所指之材料沈積配置或分佈管之噴嘴可設計以形成具有類似cosn形狀輪廓之羽狀物(plume),其中n特別是大於4。於一例子中,噴嘴係設計以形成具有類似cos6形狀輪廓之羽狀物。如果需要窄形狀之羽狀物時,達成cosn形式羽狀物之已蒸發材料的噴嘴可有用處。舉例來說,包括用於基板之具有小開孔(例如是具有約20μm之尺寸的開孔)的遮罩之沈積製程從窄cosn形狀羽狀物可獲益,且既然已蒸發材料之羽狀物係不散佈在遮罩上而是通過遮罩之開孔,材料利用可增加。根據一些實施例,噴嘴可設計,使得噴嘴之長度及噴嘴之通道之直徑的關係係為已定義關係,例如是2:1或更高。根據額外或選擇性實施例,噴嘴之通道可包括段差(steps)、斜面、準直儀(collimator)結構及/或壓力級(pressure stages),用以達成所需之羽狀物形狀。 According to some embodiments that can be combined with other embodiments described herein, the nozzle of the material deposition configuration or distribution tube referred to herein can be designed to form a plume having a cos n- shaped profile, where n is particularly Greater than 4. In one example, the nozzle is designed to form feathers with a cos 6- like profile. If a narrow-shaped plume is needed, a nozzle that achieves the evaporated material of the cos n- shaped plume can be useful. For example, a deposition process that includes a mask for a substrate with small openings (eg, openings with a size of about 20 μm) can benefit from narrow cos n- shaped plumes, and since the plumes of evaporated material The object is not spread on the mask but through the opening of the mask, the material utilization can be increased. According to some embodiments, the nozzle may be designed such that the relationship between the length of the nozzle and the diameter of the channel of the nozzle is a defined relationship, such as 2:1 or higher. According to additional or alternative embodiments, the channels of the nozzle may include steps, slopes, collimator structures and/or pressure stages to achieve the desired plume shape.

根據此處所述一些實施例,真空沈積腔室係說明。真空沈積腔室包括根據上述之任何實施例之材料沈積配置。真空沈積腔室更包括基板支座,用以於沈積期間支撐基板。一般來說,在材料沈積配置之數個分佈管之至少一者與基板支座之間的距離係少於250mm。根據一些實施例,在分佈管與基板支座之間的距離可從分佈管之噴嘴出口和基板支座的一位置測量,基板支座的此位置係位於具有基板之一平面(舉例為接觸點、夾件或類似者)。 According to some embodiments described herein, the vacuum deposition chamber is illustrated. The vacuum deposition chamber includes a material deposition configuration according to any of the embodiments described above. The vacuum deposition chamber further includes a substrate support for supporting the substrate during deposition. Generally, the distance between at least one of the distribution tubes in the material deposition configuration and the substrate support is less than 250 mm. According to some embodiments, the distance between the distribution tube and the substrate support can be measured from a position of the nozzle outlet of the distribution tube and the substrate support, which is located on a plane (e.g. contact point) with the substrate , Clips or similar).

於一些實施例中,真空沈積腔室可包括材料沈積配置,材料沈積配置具有噴嘴,此噴嘴具有2:1或更大之開孔尺寸對開孔長度比。根據可與此處所述其他實施例結合之一些實施例,真空沈積腔室可包括材料沈積配置,材料沈積配置具有第一材料源和第二材料源,例如是如上所述之第一和第二材料源(第一和第二材料源舉例為具有第一分佈管和第二分佈管,第一分佈管具有數個第一噴嘴,第二分佈管具有數個第二噴嘴)。一般來說,此些第一噴嘴之一第一噴嘴和此些第二噴嘴之一第二噴嘴之間的距離係等同於或少於30mm。 In some embodiments, the vacuum deposition chamber may include a material deposition configuration with a nozzle having an opening size to opening length ratio of 2:1 or greater. According to some embodiments that can be combined with other embodiments described herein, the vacuum deposition chamber may include a material deposition configuration having a first material source and a second material source, such as the first and Two material sources (the first and second material sources are exemplified by having a first distribution tube and a second distribution tube, the first distribution tube has a plurality of first nozzles, and the second distribution tube has a plurality of second nozzles). Generally, the distance between one of the first nozzles and the second of the second nozzles is equal to or less than 30 mm.

根據可與此處所述其他實施例結合之一些實施例,真空沈積腔室可包括材料沈積配置,材料沈積配置具有噴嘴,此噴嘴具有2:1或更大之開孔尺寸對開孔長度比。根據可與此處所述其他實施例結合之一些實施例,真空沈積腔室可包括具有第一材料源和第二材料源之材料沈積配置,第一材料源和第二材料源 例如是如上所述之第一和第二材料源(第一和第二材料源舉例為具有第一分佈管和第二分佈管,第一分佈管具有數個第一噴嘴,第二分佈管具有數個第二噴嘴)。一般來說,第一分佈管之此些第一噴嘴的至少一者係提供第一分佈方向,且此些第二噴嘴的至少一者係提供第二分佈方向。於一些實施例中,此些第一噴嘴之此一或多個噴嘴的第一分佈方向和此些第二噴嘴之此一或多個噴嘴的第二分佈方向係彼此平行排列或從平行排列偏差最多5°排列。 According to some embodiments, which may be combined with other embodiments described herein, the vacuum deposition chamber may include a material deposition configuration having a nozzle having an opening size to opening length ratio of 2:1 or greater. According to some embodiments, which may be combined with other embodiments described herein, the vacuum deposition chamber may include a material deposition configuration having a first material source and a second material source, the first material source and the second material source For example, as described above, the first and second material sources (the first and second material sources are exemplified as having a first distribution tube and a second distribution tube, the first distribution tube has a plurality of first nozzles, and the second distribution tube has Several second nozzles). Generally, at least one of the first nozzles of the first distribution tube provides a first distribution direction, and at least one of the second nozzles provides a second distribution direction. In some embodiments, the first distribution direction of the one or more nozzles of the first nozzles and the second distribution direction of the one or more nozzles of the second nozzles are arranged parallel to each other or deviate from the parallel arrangement Up to 5° arrangement.

根據一些實施例,真空沈積腔室可包括材料沈積配置,材料沈積配置具有分佈管,分佈管具有分佈管殼體及噴嘴,噴嘴係位於分佈管殼體中。噴嘴開孔之長度對尺寸比係為2:1或更大且噴嘴包括對已蒸發有機材料化學惰性之材料,已蒸發有機材料例如是上述所指之有機材料。 According to some embodiments, the vacuum deposition chamber may include a material deposition configuration with a distribution tube having a distribution tube housing and a nozzle, the nozzle being located in the distribution tube housing. The length to size ratio of the nozzle opening is 2:1 or greater and the nozzle includes a material that is chemically inert to the evaporated organic material, such as the organic material referred to above.

第10圖繪示沈積設備300之示意圖,根據此處所述實施例之材料沈積配置、分佈管或噴嘴可在沈積設備300中使用。下方所指之例如是噴嘴或分佈管之元件可為如上有關於第1a至9b圖所述之元件。舉例來說,只要實施例之結合係不會彼此矛盾,下文中所指之分佈管可為有關於第1a至9b圖所範例性說明之分佈管。 FIG. 10 shows a schematic diagram of the deposition apparatus 300. The material deposition configuration, the distribution tube, or the nozzle according to the embodiments described herein may be used in the deposition apparatus 300. The elements referred to below, such as nozzles or distribution pipes, may be the elements as described above in relation to FIGS. 1a to 9b. For example, as long as the combination of the embodiments does not contradict each other, the distribution pipes referred to below may be the distribution pipes exemplarily described with reference to FIGS. 1a to 9b.

第10圖之沈積設備300包括材料源100d,位於真空腔室110之一位置。根據可與此處所述其他實施例結合之一些實施例,材料源係裝配以用於平移運動或繞著軸旋轉。材料源100d具有一或多個蒸發坩鍋104及一或多個分佈管106。兩個蒸 發坩鍋及兩個分佈管係繪示於第10圖中。分佈管106係由支座102支撐。再者,根據一些實施例,蒸發坩鍋104可亦由支座102支撐。兩個基板121係提供於真空腔室110中。一般來說,用於在基板上遮蔽層沈積的遮罩132可提供於基板和材料源100d之間。於一些實施例中,遮罩可為像素遮罩,舉例為具有開孔之像素遮罩,開孔具有尺寸(舉例為剖面之直徑或最小維度),代表性為約10μm與約50μm之間,更代表性為約15μm與約40μm之間,且甚至更代表性為約15μm與約30μm之間。於一例子中,遮罩開孔之尺寸係約20μm。於另一例子中,遮罩開孔具有約50μm x 50μm之延展。有機材料係從分佈管106蒸發。 The deposition apparatus 300 of FIG. 10 includes a material source 100d located at a position of the vacuum chamber 110. According to some embodiments, which can be combined with other embodiments described herein, the material source is assembled for translational movement or rotation about an axis. The material source 100d has one or more evaporation crucibles 104 and one or more distribution tubes 106. Two steamed The crucible and two distribution pipes are shown in Figure 10. The distribution pipe 106 is supported by the support 102. Furthermore, according to some embodiments, the evaporation crucible 104 may also be supported by the support 102. Two substrates 121 are provided in the vacuum chamber 110. In general, a mask 132 for depositing a masking layer on the substrate may be provided between the substrate and the material source 100d. In some embodiments, the mask may be a pixel mask, for example, a pixel mask with an opening, the opening has a size (for example, the diameter or the smallest dimension of the cross section), and is typically between about 10 μm and about 50 μm, More representative is between about 15 μm and about 40 μm, and even more representative is between about 15 μm and about 30 μm. In one example, the size of the mask opening is about 20 μm. In another example, the mask opening has an extension of about 50 μm x 50 μm. The organic material evaporates from the distribution tube 106.

根據此處所述之實施例,基板係於本質上垂直位置塗佈有機材料。繪示於第10圖中的視角係為包括材料源100d之設備的上視圖。一般來說,分佈管係為線性蒸汽分佈噴頭。根據一些實施例,分佈管係提供本質上垂直延伸之接線源。根據可與此處所述其他實施例結合之數個實施例,本質上垂直在意指基板方向時特別是理解為允許從垂直方向偏差20°或以下,舉例為10°或以下。舉例來說,此偏差可因基板支座具有從垂直方向之一些偏差而可能產生更穩定之基板位置來提供。然而,在沈積有機材料期間之基板方向係認定為本質上垂直,而不同於水平基板方向。於一些實施例中,基板的表面係藉由接線源塗佈,接線源係在對應於一基板維度和平移運動之方向中延伸,平移運動係沿著對應於其他基板維度之其他方向。根據其他實施例,沈積設備可 為用於沈積材料於本質上水平方向基板上之沈積設備。舉例來說,於沈積設備中塗佈基板可在上或下之方向中執行。 According to the embodiments described herein, the substrate is coated with organic material in a substantially vertical position. The angle of view shown in FIG. 10 is a top view of the device including the material source 100d. Generally speaking, the distribution pipe system is a linear steam distribution nozzle. According to some embodiments, the distribution piping system provides a substantially vertically extending wiring source. According to several embodiments that can be combined with other embodiments described herein, essentially vertical when meaning the direction of the substrate is particularly understood to allow a deviation of 20° or less from the vertical direction, for example 10° or less. For example, this deviation may be provided because the substrate support has some deviation from the vertical direction, which may result in a more stable substrate position. However, the direction of the substrate during the deposition of the organic material is considered to be substantially vertical, and is different from the horizontal substrate direction. In some embodiments, the surface of the substrate is coated by a wire source that extends in a direction corresponding to a substrate dimension and a translational movement, and the translational movement is along other directions corresponding to other substrate dimensions. According to other embodiments, the deposition apparatus may It is a deposition device for depositing material on a substrate in a substantially horizontal direction. For example, coating the substrate in the deposition apparatus may be performed in the up or down direction.

第10圖繪示用以於真空腔室110中沈積有機材料之沈積設備300之一實施例的示意圖。材料源100d係提供於真空腔室110中之一軌道上,此軌道例如是環狀軌道或線性導件320。軌道或線性導件320係裝配以用於材料源100d之平移運動。根據可與此處所述其他實施例結合之不同實施例,用於平移運動之驅動器可提供於材料源100d中、提供於軌道或線性導件320、提供於真空腔室110中或其組合。第10圖繪示閥205,閥205舉例為閘閥。閥205係提供至相鄰之真空腔室(未繪示於第10圖中)之真空密封。閥可開啟以傳送基板121或遮罩132進入真空腔室110中或離開真空腔室110。 FIG. 10 is a schematic diagram of an embodiment of a deposition apparatus 300 for depositing organic materials in the vacuum chamber 110. The material source 100d is provided on a track in the vacuum chamber 110, such as an annular track or a linear guide 320, for example. The rail or linear guide 320 is assembled for the translational movement of the material source 100d. According to different embodiments that can be combined with other embodiments described herein, a driver for translational movement can be provided in the material source 100d, in the rail or linear guide 320, in the vacuum chamber 110, or a combination thereof. Figure 10 shows a valve 205, which is an example of a gate valve. The valve 205 provides a vacuum seal to an adjacent vacuum chamber (not shown in Figure 10). The valve may be opened to transfer the substrate 121 or the mask 132 into or out of the vacuum chamber 110.

根據可與此處所述其他實施例結合之一些實施例,例如是維護真空腔室111之其他真空腔室係提供而相鄰於真空腔室110。於一些實施例中,真空腔室110及維護真空腔室111係以閥207連接。閥207係裝配以開啟及關閉在真空腔室110及維護真空腔室111之間的真空密封。當閥207係為開啟狀態中時,材料源100d可傳送至維護真空腔室111。之後,閥可關閉以提供在真空腔室110和維護真空腔室111之間的真空密封。如果閥207係關閉時,維護真空腔室111可排氣且開啟,以用以維護材料源100d而無需破壞真空腔室110中之真空。 According to some embodiments that can be combined with other embodiments described herein, other vacuum chambers such as the maintenance vacuum chamber 111 are provided adjacent to the vacuum chamber 110. In some embodiments, the vacuum chamber 110 and the maintenance vacuum chamber 111 are connected by a valve 207. The valve 207 is assembled to open and close the vacuum seal between the vacuum chamber 110 and the maintenance vacuum chamber 111. When the valve 207 is in the open state, the material source 100d can be transferred to the maintenance vacuum chamber 111. Thereafter, the valve may be closed to provide a vacuum seal between the vacuum chamber 110 and the maintenance vacuum chamber 111. If the valve 207 is closed, the maintenance vacuum chamber 111 can be exhausted and opened to maintain the material source 100d without breaking the vacuum in the vacuum chamber 110.

在10圖中所示之實施例中,兩個基板121係支撐於 在真空腔室110中之各自的傳送軌道上。根據一些實施例,在至少一分佈管和基板支座之間的距離係少於250mm。在第10圖中,此距離由在基板支座126與材料源100d之分佈管106之噴嘴的出口之間的距離101所表示。再者,兩個軌道係提供,用於設置遮罩132於其上。基板121之塗佈可由各自的遮罩132所遮蔽。根據典型實施例,此些遮罩132係提供於遮罩框架131中,以支承遮罩132於預定位置中,此些遮罩132也就是對應(右手邊的)第一基板121之第一遮罩132與對應(左手邊的)第二基板121之第二遮罩132。 In the embodiment shown in FIG. 10, two substrates 121 are supported on On the respective conveyor tracks in the vacuum chamber 110. According to some embodiments, the distance between at least one distribution tube and the substrate support is less than 250 mm. In FIG. 10, this distance is represented by the distance 101 between the substrate support 126 and the outlet of the nozzle of the distribution tube 106 of the material source 100d. Furthermore, two rails are provided for placing the mask 132 on it. The coating of the substrate 121 can be masked by the respective mask 132. According to a typical embodiment, the masks 132 are provided in the mask frame 131 to support the mask 132 in a predetermined position, and these masks 132 are the first masks corresponding to the (right-handed) first substrate 121 The cover 132 corresponds to the second cover 132 of the second substrate 121 (on the left hand side).

根據可與此處所述其他實施例結合之一些實施例,基板121可由基板支座126支撐,基板支座126係連接於對準單元112。對準單元112可調整基板121相對於遮罩132之位置。第10圖繪示基板支座126連接於對準單元112之實施例的示意圖。因此,基板係相對於遮罩132移動,以提供在有機材料沈積期間基板及遮罩之間恰當的對準。根據可與此處所述其他實施例結合之進一步的實施例,遮罩132及/或支承遮罩132之遮罩框架131可選擇性或額外地連接於對準單元112。根據一些實施例,遮罩可相對於基板121定位或遮罩132和基板121兩者可相對於彼此定位。裝配以用以調整在基板121和遮罩132相對於彼此之間的位置的對準單元112係在沈積期間提供恰當對準的遮蔽,而有利於高品質、發光二極體(LED)顯示器製造、或OLED顯示器製造。 According to some embodiments that can be combined with other embodiments described herein, the substrate 121 can be supported by a substrate support 126 that is connected to the alignment unit 112. The alignment unit 112 can adjust the position of the substrate 121 relative to the mask 132. FIG. 10 is a schematic diagram of an embodiment in which the substrate support 126 is connected to the alignment unit 112. Therefore, the substrate is moved relative to the mask 132 to provide proper alignment between the substrate and the mask during the deposition of organic material. According to further embodiments that can be combined with other embodiments described herein, the mask 132 and/or the mask frame 131 supporting the mask 132 can be selectively or additionally connected to the alignment unit 112. According to some embodiments, the mask may be positioned relative to the substrate 121 or both the mask 132 and the substrate 121 may be positioned relative to each other. The alignment unit 112, which is equipped to adjust the position of the substrate 121 and the mask 132 relative to each other, provides a properly aligned shield during deposition, which is beneficial to the manufacture of high-quality, light-emitting diode (LED) displays , Or OLED display manufacturing.

如第10圖中所示,線性導件320係提供材料源100d之平移運動之方向。在材料源100d之兩側上係提供遮罩132。遮罩132可本質上平行於平移運動之方向延伸。再者,在材料源100d之相對側之基板121可亦在本質上平行於平移運動之方向延伸。根據典型實施例,基板121可經由閥205移動至真空腔室110中且離開真空腔室110。沈積設備300可包括用以傳送各基板121之各自的傳送軌道。舉例來說,傳送軌道可平行於如第10圖中所示之基板位置延伸且進入或離開真空腔室110。 As shown in FIG. 10, the linear guide 320 provides the direction of the translational movement of the material source 100d. A mask 132 is provided on both sides of the material source 100d. The mask 132 may extend substantially parallel to the direction of translational motion. Furthermore, the substrate 121 on the opposite side of the material source 100d may also extend substantially parallel to the direction of translational motion. According to typical embodiments, the substrate 121 may move into the vacuum chamber 110 via the valve 205 and leave the vacuum chamber 110. The deposition apparatus 300 may include respective transfer tracks for transferring the substrates 121. For example, the transfer track may extend parallel to the position of the substrate as shown in FIG. 10 and enter or leave the vacuum chamber 110.

一般來說,其他軌道係提供以用以支撐遮罩框架131及遮罩132。因此,可與此處所述其他實施例結合之一些實施例可包括在真空腔室110中之四個軌道。為了移動此些遮罩132之一者離開腔室來舉例是清洗遮罩,遮罩框架131及遮罩可移動至基板121之傳送軌道上。各自之遮罩框架可在用於基板之傳送軌道上接著離開或進入真空腔室110。雖然提供用以遮罩框架131的分離之傳送軌道來進入及離開真空腔室110係有可能的,但如果只有兩個軌道係延伸進入及離開真空腔室110且此外遮罩框架131可藉由適合之致動器或機器人移動到用於基板之傳送軌道之各自一者,沈積設備300之所有權的成本可減少,此兩個軌道也就是基板之傳送軌道。 Generally, other rails are provided to support the mask frame 131 and the mask 132. Therefore, some embodiments that may be combined with other embodiments described herein may include four tracks in the vacuum chamber 110. In order to move one of these masks 132 out of the chamber, for example, to clean the mask, the mask frame 131 and the mask can be moved onto the transfer path of the substrate 121. The respective mask frames can then leave or enter the vacuum chamber 110 on the transfer track for the substrate. Although it is possible to provide separate conveying tracks for the mask frame 131 to enter and leave the vacuum chamber 110, if only two tracks extend into and leave the vacuum chamber 110 and in addition the mask frame 131 can A suitable actuator or robot moves to each of the transfer tracks for the substrate, and the cost of ownership of the deposition apparatus 300 can be reduced. These two tracks are also the transfer tracks of the substrate.

第10圖繪示材料源100d之範例性實施例之示意圖。材料源100d包括支座102。支座102係裝配以沿著線性導件320平移運動。支座102支撐兩個蒸發坩鍋104及兩個分佈管 106,分佈管106提供於蒸發坩鍋104之上方。在蒸發坩鍋中產生之蒸汽可向上地移動且離開分佈管之一或多個噴嘴或出口。 FIG. 10 shows a schematic diagram of an exemplary embodiment of the material source 100d. The material source 100d includes a support 102. The support 102 is assembled to move in translation along the linear guide 320. The support 102 supports two evaporation crucibles 104 and two distribution tubes 106. The distribution tube 106 is provided above the evaporation crucible 104. The steam generated in the evaporation crucible can move upward and leave one or more nozzles or outlets of the distribution tube.

根據此處所述實施例,材料源包括一或多個蒸發坩鍋及一或多個分佈管,其中此一或多個分佈管之各自一者可流體連通於此一或多個蒸發坩鍋之各自一者。用於OLED裝置製造之數種應用包括處理特徵,其中一、二或多個有機材料係同時地蒸發。因此,如例如是第10圖中所示,兩個分佈管及對應之蒸發坩鍋可相鄰於彼此提供。因此,材料源100d可亦意指為材料源陣列,舉例來說,其中多於一種有機材料係同時蒸發。如此處所述,材料源陣列本身可意指為用於兩個或多個有機材料的材料源,例如是材料源陣列可提供用於蒸發及沈積三個材料到一基板上。根據一些實施例,材料源陣列可裝配以用於從不同材料源同時提供相同材料。 According to the embodiments described herein, the material source includes one or more evaporation crucibles and one or more distribution tubes, wherein each of the one or more distribution tubes can be in fluid communication with the one or more evaporation crucibles Each of them. Several applications for OLED device manufacturing include processing features, where one, two or more organic materials are evaporated simultaneously. Therefore, as shown in, for example, FIG. 10, two distribution tubes and corresponding evaporation crucibles may be provided adjacent to each other. Therefore, the material source 100d may also mean an array of material sources, for example, in which more than one organic material system evaporates simultaneously. As described herein, the material source array itself may mean a material source for two or more organic materials. For example, the material source array may provide three materials for evaporation and deposition on a substrate. According to some embodiments, an array of material sources may be assembled for providing the same material simultaneously from different material sources.

分佈管之此一或多個噴嘴可包括例如是可為提供在噴頭或另一蒸汽分佈系統中的一或多個噴嘴。提供於此處所述之分佈管的噴嘴可為此處所述實施例中說明之噴嘴,例如是有關於第8a至8d圖說明之噴嘴。分佈管於此可理解為包括一內部空間,此內部空間具有數個開孔,使得在分佈管中之壓力係高於在分佈管之外側的壓力,舉例為至少一個數量級。於一例子中,在分佈管中之壓力可在約10-2至約10-3mbar之間。 The one or more nozzles of the distribution tube may include, for example, one or more nozzles that may be provided in a spray head or another steam distribution system. The nozzle provided in the distribution pipe described herein may be the nozzle described in the embodiments described herein, for example, the nozzle described in relation to FIGS. 8a to 8d. The distribution pipe can be understood as including an internal space with a plurality of openings, so that the pressure in the distribution pipe is higher than the pressure on the outside of the distribution pipe, for example, at least one order of magnitude. In one example, the pressure in the distribution tube may be between about 10-2 to about 10 -3 mbar.

根據可與此處所述其他實施例結合之數個實施例,分佈管之旋轉可藉由蒸發器控制殼體之旋轉提供,至少分佈管係 固定於蒸發器控制殼體上。藉由沿著環狀軌道之彎曲部分移動材料源,可額外或選擇性提供分佈管旋轉。一般來說,蒸發坩鍋係亦固定於蒸發器控制殼體上。因此,材料源包括分佈管及蒸發坩鍋,分佈管及蒸發坩鍋舉例可旋轉地固定在一起。 According to several embodiments that can be combined with other embodiments described herein, the rotation of the distribution tube can be provided by the rotation of the evaporator control housing, at least the distribution tube system It is fixed on the evaporator control housing. By moving the material source along the curved portion of the circular track, the distribution tube rotation can be additionally or selectively provided. Generally speaking, the evaporation crucible is also fixed on the evaporator control housing. Therefore, the material source includes a distribution tube and an evaporation crucible. For example, the distribution tube and the evaporation crucible are rotatably fixed together.

根據可與此處所述其他實施例結合之一些實施例,分佈管或蒸發管可設計成三角形之形狀,使得分佈管之開孔或噴嘴可盡可能的彼此靠近。讓分佈管之開孔或噴嘴盡可能的彼此靠近係提供例如是改善混合不同有機材料,舉例為用於在共蒸發兩個、三個或甚至多個不同之有機材料的情況。 According to some embodiments that can be combined with other embodiments described herein, the distribution tube or the evaporation tube can be designed in a triangular shape so that the openings or nozzles of the distribution tube can be as close as possible to each other. Bringing the openings or nozzles of the distribution tube as close as possible to each other provides, for example, improved mixing of different organic materials, for example for the case of co-evaporating two, three or even multiple different organic materials.

根據此處所述數個實施例,分佈管之出口側的寬度(包括開孔之分佈管之側)係為剖面之最大維度的30%或少於30%。有鑑於其,分佈管之開孔或相鄰分佈管之噴嘴可提供在較小距離處。此較小距離係改善數個有機材料之混合,此些有機材料係相鄰於彼此而進行蒸發。再者,獨立於改善有機材料之混合之外,以本質上平行方式面對基板之牆的寬度可額外或選擇性減少。因此,以本質上平行方式面對基板的牆之表面區域可減少。此配置減少提供至遮罩或基板之熱負荷,遮罩或基板係支撐在沈積區域中,或稍微在沈積區域之前。 According to several embodiments described herein, the width of the outlet side of the distribution tube (including the side of the distribution tube with openings) is 30% or less of the maximum dimension of the profile. In view of this, the opening of the distribution pipe or the nozzle of the adjacent distribution pipe can be provided at a small distance. This smaller distance improves the mixing of several organic materials that evaporate next to each other. Furthermore, independently of improving the mixing of organic materials, the width of the wall facing the substrate in a substantially parallel manner can be additionally or selectively reduced. Therefore, the surface area of the wall facing the substrate in a substantially parallel manner can be reduced. This configuration reduces the heat load provided to the mask or substrate, which is supported in the deposition area, or slightly before the deposition area.

有鑑於材料源之三角形之形狀,朝向遮罩輻射之面積係額外或選擇性減少。此外,金屬板之堆疊可提供,以減少從材料源至遮罩之熱傳送,金屬板之堆疊係舉例為最多10個金屬板。根據可與此處所述其他實施例結合之一些實施例,加熱遮蔽 件或金屬板可提供而具有用於噴嘴之孔口(orifices),且可貼附於至少源之前側,也就是面對基板之側。 In view of the triangular shape of the material source, the area radiated towards the mask is additionally or selectively reduced. In addition, a stack of metal plates can be provided to reduce the heat transfer from the material source to the shield. The stack of metal plates is exemplified by up to 10 metal plates. According to some embodiments that can be combined with other embodiments described herein, the heating mask The piece or metal plate may be provided with orifices for the nozzle, and may be attached to at least the front side of the source, that is, the side facing the substrate.

雖然如第10圖中所示之實施例係提供具有可移動源之沈積設備,具有通常知識者可理解上述實施例可亦提供在數個沈積設備中,基板於處理期間係在此些沈積設備中移動。舉例來說,可沿著靜態材料源導引且驅動將塗佈之基板。 Although the embodiment shown in FIG. 10 provides a deposition apparatus with a movable source, a person with ordinary knowledge can understand that the above-mentioned embodiment can also be provided in several deposition apparatuses, where the substrates are deposited during processing China Mobile. For example, the substrate to be coated can be guided and driven along a source of static material.

此處所述實施例特別是有關於沈積有機材料,沈積有機材料舉例為在大面積基板上之OLED顯示器製造。根據一些實施例,大面積基板或支撐一或多個基板之載體,也就是大面積載體,可具有至少0.174m2之尺寸。舉例來說,沈積設備可適用於處理大面積基板,例如是第5代、第7.5代、第8.5代、或甚至第10代,第5代係對應於約1.4m2之基板(1.1m x 1.3m),第7.5代對應於約4.29m2之基板(1.95m x 2.2m),第8.5代對應於約5.7m2之基板(2.2m x 2.5m),第10代對應於約8.7m2之基板(2.85m×3.05m)。甚至例如是第11代及第12代之更高代及對應之基板面積可以類似之方式應用。根據可與此處所述其他實施例結合之典型實施例,基板厚度可為從0.1至1.8mm及用於基板之支承配置可適用於此種基板厚度。然而,特別是,基板厚度可為約0.9mm或以下,例如是0.5mm或0.3mm,且支承配置係適用於此種基板厚度。一般來說,基板可由任何適合於材料沈積的材料製成。舉例來說,基板可以選自由玻璃(舉例為鈉鈣玻璃、硼矽玻璃等)、金屬、聚合物、陶瓷、複合材料、碳纖材 料或任何其他材料或可以沈積製程塗佈之材料的組合所組成之材料製成。 The embodiments described herein are particularly related to the deposition of organic materials, such as the manufacture of OLED displays on large-area substrates. According to some embodiments, a large area substrate or a carrier supporting one or more substrates, that is, a large area carrier, may have a size of at least 0.174 m 2 . For example, the deposition equipment may be suitable for processing large area substrates, such as the 5th generation, 7.5th generation, 8.5th generation, or even the 10th generation, the 5th generation corresponds to a substrate of about 1.4m 2 (1.1mx 1.3 m), 7.5G corresponding to the substrate 2 of about 4.29m (1.95mx 2.2m), corresponding to about 8.5 Generation of 5.7m 2 substrate (2.2mx 2.5m), the first passage 10 2 corresponding to the substrate of about 8.7m (2.85m×3.05m). Even higher generations such as the 11th and 12th generations and corresponding substrate areas can be applied in a similar manner. According to typical embodiments that can be combined with other embodiments described herein, the substrate thickness can be from 0.1 to 1.8 mm and the support configuration for the substrate can be adapted to such substrate thickness. However, in particular, the thickness of the substrate may be about 0.9 mm or less, for example 0.5 mm or 0.3 mm, and the supporting arrangement is suitable for such substrate thickness. In general, the substrate can be made of any material suitable for material deposition. For example, the substrate may be selected from the group consisting of glass (for example, soda lime glass, borosilicate glass, etc.), metal, polymer, ceramic, composite material, carbon fiber material, or any other material or a combination of materials that can be deposited by a deposition process Made of materials.

根據一些實施例,用以於真空沈積腔室中沈積已蒸發材料於基板上之方法係提供,真空沈積腔室具有腔室空間。腔室空間可理解為腔室牆所包含之空間,且特別是提供於相同壓力規範之空間。繪示根據此處所述之方法的流程圖400係繪示於第11圖中。此方法於方塊410中包括利用第一材料蒸發器蒸發第一材料,第一材料蒸發器係排列在腔室空間中。舉例來說,第一材料蒸發器可為用以蒸發有機材料之源。於一例子中,蒸發器可適用於蒸發具有約150°至約500°之蒸發溫度的材料。於一些實施例中,材料源可為坩鍋。 According to some embodiments, a method for depositing evaporated material on a substrate in a vacuum deposition chamber is provided, the vacuum deposition chamber having a chamber space. The chamber space can be understood as the space contained in the chamber wall, and especially the space provided at the same pressure specification. A flowchart 400 illustrating the method described herein is shown in FIG. 11. The method at block 410 includes using a first material evaporator to evaporate the first material, the first material evaporator being arranged in the chamber space. For example, the first material evaporator may be a source for evaporating organic materials. In one example, the evaporator may be suitable for evaporating materials having an evaporation temperature of about 150° to about 500°. In some embodiments, the source of material may be a crucible.

於方塊420中,此方法包括提供已蒸發第一材料至第一分佈管,第一分佈管包括第一分佈管殼體。根據此處所述實施例,第一分佈管係流體連通於第一材料蒸發器。根據一些實施例,分佈管可為如上所述之分佈管,舉例為線性分佈管、或如第1a至9b圖所示之分佈管。提供已蒸發第一材料至第一分佈管更包括在第一分佈管中提供約10-2-10-1mbar之壓力。在方塊430中,已蒸發材料係導引通過在第一分佈管殼體中之數個第一噴嘴的一或多者。一般來說,此些第一噴嘴的此一或多的噴嘴具有開孔長度及開孔尺寸,其中導引已蒸發材料通過此一或多個噴嘴更包括導引已蒸發材料通過具有長度對尺寸比等同於或大於2:1之一或多個噴嘴。根據一些實施例,導引已蒸發材料通過之噴嘴可 為如上實施例中所說明的噴嘴。於一例子中,噴嘴可為可鎖固於分佈管殼體。於可與此處所述其他實施例結合之一實施例中,噴嘴可包括一材料,此材料對已蒸發有機材料係為化學惰性,例如是如第7a至7d圖中所示之噴嘴。根據一些實施例,噴嘴可為分佈管之一部分,如相關於第9a及9b圖中所範例性繪示及說明。 In block 420, the method includes providing the evaporated first material to the first distribution tube, the first distribution tube including a first distribution tube housing. According to the embodiments described herein, the first distribution pipe system is in fluid communication with the first material evaporator. According to some embodiments, the distribution tube may be a distribution tube as described above, for example, a linear distribution tube, or a distribution tube as shown in FIGS. 1a to 9b. Providing the evaporated first material to the first distribution tube further includes providing a pressure of about 10 -2 -10 -1 mbar in the first distribution tube. At block 430, the evaporated material is directed through one or more of the first nozzles in the first distribution tube housing. Generally speaking, the one or more nozzles of the first nozzles have an opening length and an opening size, wherein guiding the evaporated material through the one or more nozzles further includes guiding the evaporated material to have a length to size One or more nozzles with a ratio equal to or greater than 2:1. According to some embodiments, the nozzle that guides the evaporated material may be the nozzle as described in the above embodiment. In one example, the nozzle may be lockable on the distribution tube housing. In an embodiment that can be combined with other embodiments described herein, the nozzle may include a material that is chemically inert to the evaporated organic material, such as the nozzle shown in Figures 7a to 7d. According to some embodiments, the nozzle may be part of the distribution tube, as exemplarily shown and described in relation to Figures 9a and 9b.

於方塊440中,已蒸發材料係朝向腔室空間中之基板釋放至腔室空間。一般來說,腔室空間係提供10-5至10-7mbar之壓力,更代表性約10-6至約10-7mbar。舉例來說,真空腔室可包括幫浦、密封件、及類似物,用以能夠讓腔室排氣至約10-5至10-7mbar之壓力且用以保持在真空腔室中之壓力。於一些實施例中,從噴嘴釋放之蒸汽羽狀物可具有類似cos6分佈。根據此處所述一些實施例,具有類似cos6分佈之蒸汽羽狀物可比具有類似cos1分佈之蒸汽羽狀物提供較小之遮蔽效應。此效應例如是繪示於第3a至3c圖中。具有類似cos6分佈之已蒸發材料的情況中,在基板上之材料沈積的均勻以及沈積之準確性可增加。 In block 440, the evaporated material is released into the chamber space toward the substrate in the chamber space. Generally, the chamber space provides a pressure of 10 -5 to 10 -7 mbar, more typically about 10 -6 to about 10 -7 mbar. For example, the vacuum chamber may include pumps, seals, and the like to enable the chamber to be evacuated to a pressure of about 10 -5 to 10 -7 mbar and to maintain the pressure in the vacuum chamber . In some embodiments, the steam plumes released from the nozzle may have a similar cos 6 distribution. According to some embodiments described herein, a steam plume with a similar cos 6 distribution may provide a smaller shadowing effect than a steam plume with a similar cos 1 distribution. This effect is illustrated in Figures 3a to 3c, for example. In the case of evaporated material with a similar cos 6 distribution, the uniformity of material deposition on the substrate and the accuracy of deposition can be increased.

根據一些實施例,此方法更包括利用在腔室空間中之第二材料蒸發器蒸發第二材料,提供已蒸發第二材料至第二分佈管,第二分佈管包括第二分佈管殼體。根據一些實施例,第二材料可為相同於第一材料之材料。於其他實施例中,第二材料係不同於第一材料。於一些實施例中,第二分佈管可為如上述之分佈管。一般來說,第二分佈管係流體連通於第二材料蒸發器,且提供已蒸發第二材料至第二分佈管係包括在第二分佈管中提供約 10-2-10-1mbar之壓力。真空腔室及/或材料沈積配置可提供而具有幫浦、密封件、閥、及類似物,用以提供且維持在分佈管中之壓力。此方法可更包括導引已蒸發材料通過在第二分佈管殼體中之數個第二噴嘴的一或多者。於一些實施例中,已蒸發第一材料及已蒸發第二材料係在少於30mm之距離中分別導引通過第一分佈管之此一或多個第一噴嘴及第二分佈管之此一或多個第二噴嘴。少於30mm之距離可讓在基板上之不同的已蒸發材料準確沈積,舉例為製造OLED顯示器或類似物。 According to some embodiments, the method further includes evaporating the second material using a second material evaporator in the chamber space, providing the evaporated second material to the second distribution tube, the second distribution tube including a second distribution tube housing. According to some embodiments, the second material may be the same material as the first material. In other embodiments, the second material is different from the first material. In some embodiments, the second distribution tube may be a distribution tube as described above. Generally speaking, the second distribution pipe system is in fluid communication with the second material evaporator, and providing evaporated second material to the second distribution pipe system includes providing a pressure of about 10 -2 -10 -1 mbar in the second distribution pipe . Vacuum chambers and/or material deposition configurations can be provided with pumps, seals, valves, and the like to provide and maintain the pressure in the distribution tube. The method may further include guiding the evaporated material through one or more of the second nozzles in the second distribution tube housing. In some embodiments, the evaporated first material and the evaporated second material are respectively guided through the one or more first nozzles of the first distribution tube and the second distribution tube at a distance of less than 30 mm Or multiple second nozzles. A distance of less than 30mm allows accurate deposition of different evaporated materials on the substrate, for example for the manufacture of OLED displays or the like.

根據可與此處所述其他實施例結合之數個實施例,已蒸發第一材料係從在第一分佈方向中之第一分佈管之此一或多個第一噴嘴釋放,第一分佈方向係平行於第二分佈管之此一或多個第二噴嘴的第二分佈方向,或從平行排列偏差最多5°。分佈方向之平行排列可提供來自不同材料源之不同已蒸發材料已定義沈積且混合特徵。 According to several embodiments that can be combined with other embodiments described herein, the evaporated first material is released from the one or more first nozzles of the first distribution tube in the first distribution direction, the first distribution direction It is parallel to the second distribution direction of the one or more second nozzles of the second distribution tube, or deviates from the parallel arrangement by at most 5°. The parallel arrangement of the distribution directions can provide the defined deposition and mixing characteristics of different evaporated materials from different material sources.

於可與此處所述其他實施例結合之再其他實施例中,第一分佈管及第二分佈管之至少一者的此一或多個噴嘴包括一材料,此材料對已蒸發有機材料係為化學惰性。噴嘴包括惰性材料(舉例為作為噴嘴開孔之塗佈的惰性材料),通過噴嘴之已蒸發材料係不受噴嘴材料影響且保持在需要的狀態中。舉例來說,已蒸發材料之成份係在噴嘴之前及之後保持相同。於一例子中,方向、流速及壓力可仍舊受噴嘴影響。 In still other embodiments that can be combined with other embodiments described herein, the one or more nozzles of at least one of the first distribution tube and the second distribution tube include a material that is a system of evaporated organic materials It is chemically inert. The nozzle includes an inert material (for example, an inert material coated as a nozzle opening), and the evaporated material passing through the nozzle is not affected by the nozzle material and is maintained in a desired state. For example, the composition of the evaporated material remains the same before and after the nozzle. In one example, the direction, flow rate, and pressure may still be affected by the nozzle.

於一些實施例中,此方法包括加熱分佈管至將沈 積於基板上之材料之蒸發溫度或以上。分佈管之加熱可藉由加熱裝置執行。於一例子中,加熱裝置之成效可由加熱遮蔽件支援,如舉例為上述有關於第8a至8c圖之說明。 In some embodiments, this method includes heating the distribution tube to The evaporation temperature of the material accumulated on the substrate or above. The heating of the distribution tube can be performed by a heating device. In one example, the effectiveness of the heating device can be supported by the heating shield, as exemplified in the description above regarding Figures 8a to 8c.

根據一些實施例,係提供如此處所述之材料沈積配置的使用,及/或如此處所述之分佈管之使用。 According to some embodiments, the use of a material deposition configuration as described herein, and/or the use of a distribution tube as described herein are provided.

有鑑於上方數個實施例之說明,此些實施例包括: In view of the description of several embodiments above, these embodiments include:

實施例1. 一種用以於一真空腔室中沈積已蒸發材料於一基板上之設備,包括一第一材料源,第一材料源包括一第一材料蒸發器,裝配以蒸發一第一材料;一第一分佈管,包括一第一分佈管殼體,其中第一分佈管係流體流通於第一材料蒸發器;以及數個第一噴嘴,位於第一分佈管殼體中,其中此些第一噴嘴之一或多個噴嘴包括一開孔長度及一開孔尺寸,其中此些第一噴嘴之此一或多個噴嘴之開孔長度對開孔尺寸之比係大於或等同於2:1;以及一第二材料源,包括一第二材料蒸發器,第二材料蒸發器裝配以蒸發一第二材料;一第二分佈管,包括一第二分佈管殼體,其中第二分佈管係流體流通於第二材料蒸發器;以及數個第二噴嘴,位於第二分佈管殼體中;其中此些第一噴嘴之至少一第一噴嘴及此些第二噴嘴之至少一第二噴嘴之間的一距離係少於或等同於50mm。 Embodiment 1. An apparatus for depositing evaporated material on a substrate in a vacuum chamber, including a first material source, the first material source includes a first material evaporator, and is configured to evaporate a first material A first distribution pipe, including a first distribution pipe casing, wherein the first distribution pipe fluid flows through the first material evaporator; and several first nozzles, located in the first distribution pipe casing, of which One or more nozzles of the first nozzle include an opening length and an opening size, wherein the ratio of the opening length to the opening size of the one or more nozzles of the first nozzles is greater than or equal to 2:1 ; And a second material source, including a second material evaporator, the second material evaporator is equipped to evaporate a second material; a second distribution tube, including a second distribution tube housing, wherein the second distribution tube system The fluid flows through the second material evaporator; and several second nozzles located in the second distribution tube housing; wherein at least one of the first nozzles and at least one second nozzle of the second nozzles The distance between them is less than or equal to 50mm.

實施例2. 根據實施例1之設備,其中此些第一噴嘴之此至少一第一噴嘴及此些第二噴嘴之此至少一第二噴嘴之間的距離係為一水平距離。 Embodiment 2. The apparatus according to embodiment 1, wherein the distance between the at least one first nozzle of the first nozzles and the at least one second nozzle of the second nozzles is a horizontal distance.

實施例3. 根據前述實施例之任一者的設備,其中第一分佈管及第二分佈管之間的一距離係少於或等同於30mm。 Embodiment 3. The apparatus according to any one of the preceding embodiments, wherein a distance between the first distribution tube and the second distribution tube is less than or equal to 30 mm.

實施例4. 根據前述實施例之任一者的設備,其中此些第一噴嘴之此至少一第一噴嘴與此些第二噴嘴之此至少一第二噴嘴之間的距離係為此至少一第一噴嘴之第一中心點與此至少一第二噴嘴之第二中心點之間的一距離。 Embodiment 4. The apparatus according to any of the preceding embodiments, wherein the distance between the at least one first nozzle of the first nozzles and the at least one second nozzle of the second nozzles is at least one A distance between the first center point of the first nozzle and the second center point of the at least one second nozzle.

實施例5. 根據前述實施例之任一者的設備,其中第一噴嘴係提供一第一分佈方向,且第二噴嘴係提供一第二分佈方向,且其中第一分佈方向與第二分佈方向係以從彼此平行偏差最多5°(up to 5°)之方式排列。 Embodiment 5. The apparatus according to any one of the preceding embodiments, wherein the first nozzle provides a first distribution direction, and the second nozzle provides a second distribution direction, and wherein the first distribution direction and the second distribution direction They are arranged in such a way that they deviate from each other by up to 5° (up to 5°).

實施例6. 一種用以於一真空腔室中沈積已蒸發材料於一基板上之設備,包括一第一材料源,包括一第一材料蒸發器,第一材料蒸發器裝配以蒸發一第一材料;一第一分佈管,包括一第一分佈管殼體,其中第一分佈管係流體連通於第一材料蒸發器;以及數個第一噴嘴,位於第一分佈管殼體中,其中此些第一噴嘴之一或多個第一噴嘴包括一開孔長度及一開孔尺寸且提供一第一分佈方向,其中此些第一噴嘴之此一或多個噴嘴之開孔長度對開孔尺寸之比係大於或等同於2:1;以及一第二材料源,包括一第二材料蒸發器,第二材料蒸發器裝配以蒸發一第二材料; 一第二分佈管,包括一第二分佈管殼體,其中第二分佈管係流體連通於第二材料蒸發器;以及數個第二噴嘴,位於第二分佈管殼體中,其中此些第二噴嘴之一或多個噴嘴係提供一第二分佈方向;其中此些第一噴嘴的此一或多個噴嘴的第一分佈方向與此些第二噴嘴的此一或多個噴嘴之第二分佈方向係從平行偏差最多5°之方式排列。 Embodiment 6. An apparatus for depositing evaporated material on a substrate in a vacuum chamber, including a first material source, including a first material evaporator, the first material evaporator is equipped to evaporate a first Material; a first distribution tube, including a first distribution tube housing, wherein the first distribution tube is in fluid communication with the first material evaporator; and a number of first nozzles are located in the first distribution tube housing, where this One or more first nozzles of the first nozzles include an opening length and an opening size and provide a first distribution direction, wherein the opening length of the one or more nozzles of the first nozzles corresponds to the opening size The ratio is greater than or equal to 2:1; and a second material source, including a second material evaporator, which is equipped to evaporate a second material; A second distribution pipe, including a second distribution pipe casing, wherein the second distribution pipe is in fluid communication with the second material evaporator; and a plurality of second nozzles are located in the second distribution pipe casing, of which One or more of the two nozzles provide a second distribution direction; wherein the first distribution direction of the one or more nozzles of the first nozzles and the second of the one or more nozzles of the second nozzles The distribution direction is arranged from the parallel deviation up to 5°.

實施例7. 根據實施例6之設備,其中第一分佈方向對應於從此些第一噴嘴之此一或多個噴嘴釋放的已蒸發材料的羽狀物(plume)的一平均蒸發方向,且其中第二分佈方向對應於從此些第二噴嘴之此一或多個噴嘴釋放的已蒸發材料的羽狀物的一平均蒸發方向。 Embodiment 7. The apparatus according to embodiment 6, wherein the first distribution direction corresponds to an average evaporation direction of plumes of evaporated material released from the one or more nozzles of the first nozzles, and wherein The second distribution direction corresponds to an average evaporation direction of the plumes of evaporated material released from the one or more nozzles of the second nozzles.

實施例8. 根據實施例6至7之任一者之設備,其中此些第一噴嘴之至少一第一噴嘴與此些第二噴嘴之至少一第二噴嘴之間的一距離係少於或等同於50mm。 Embodiment 8. The apparatus according to any one of embodiments 6 to 7, wherein a distance between at least one of the first nozzles and at least a second nozzle of the second nozzles is less than or Equivalent to 50mm.

實施例9. 根據前述實施例之任一者之設備,其中第一分佈管與第二分佈管之至少一者的此些噴嘴之此一或多個噴嘴包括一材料,此材料對一已蒸發有機材料係為化學惰性(chemically inert)。 Embodiment 9. The apparatus according to any one of the preceding embodiments, wherein the one or more nozzles of the nozzles of at least one of the first distribution tube and the second distribution tube include a material that has evaporated The organic material system is chemically inert.

實施例10. 一種分佈管,用以於一真空腔室中沈積已蒸發材料於一基板上,此分佈管包括一分佈管殼體;以及一噴嘴,位於分佈管殼體中,其中噴嘴包括一開孔,此開孔具有一開孔長度及一開孔尺寸;其中噴嘴之開孔長度對開孔尺寸比係大 於或等同於2:1;以及其中噴嘴包括一材料,此材料對一已蒸發有機材料係為化學惰性。 Embodiment 10. A distribution tube for depositing evaporated material on a substrate in a vacuum chamber, the distribution tube includes a distribution tube housing; and a nozzle located in the distribution tube housing, wherein the nozzle includes a Opening, the opening has an opening length and an opening size; wherein the opening length of the nozzle is larger than the opening size Is equivalent to 2:1; and where the nozzle includes a material that is chemically inert to an evaporated organic material system.

實施例11. 根據實施例10之分佈管,其中噴嘴材料係於最多650℃之一溫度對已蒸發有機材料係為化學惰性。 Embodiment 11. The distribution tube according to embodiment 10, wherein the nozzle material is chemically inert to the evaporated organic material at a temperature of at most 650°C.

實施例12. 根據實施例10至11之任一者之分佈管,其中噴嘴之開孔的內側係塗佈有一材料,此材料對一已蒸發有機材料係為化學惰性。 Embodiment 12. The distribution tube according to any one of embodiments 10 to 11, wherein the inside of the opening of the nozzle is coated with a material that is chemically inert to an evaporated organic material.

實施例13. 根據實施例10至12之任一者之分佈管,其中對一已蒸發有機材料為化學惰性之材料係選自由不鏽鋼、石英玻璃、鈦、鉭、鈮、及類鑽塗層(DLC)所組成的群組。 Embodiment 13. The distribution tube according to any one of embodiments 10 to 12, wherein the material that is chemically inert to an evaporated organic material is selected from stainless steel, quartz glass, titanium, tantalum, niobium, and diamond-like coatings ( DLC).

實施例14. 一種用以於一真空腔室中沈積已蒸發材料於一基板上之設備,包括一第一材料源,第一材料源包括一第一材料蒸發器,裝配以蒸發一第一材料;為設備的一第一分佈管之根據實施例11至14之任一者之分佈管,其中第一分佈管係流體連通於第一材料蒸發器;數個第一噴嘴,位於第一分佈管之分佈管殼體中;以及一第二材料源,包括一第二材料蒸發器,第二材料蒸發器裝配以蒸發一第二材料;以及一第二分佈管,包括一第二分佈管殼體,其中第二分佈管係流體連通於第二材料蒸發器;以及數個第二噴嘴,位於第二分佈管殼體中;其中此些第一噴嘴之至少一者及此些第二噴嘴之至少一者之間的一距離係少於或等同50mm;或者其中此些第一噴嘴之至少一者係裝配以提供一第一分佈方向且此些第二噴嘴之至少一者係裝配以提供一第二 分佈方向,其中第一分佈方向與第二分佈方向係以從平行偏差最多5°之方式排列。 Embodiment 14. An apparatus for depositing evaporated material on a substrate in a vacuum chamber, including a first material source, the first material source includes a first material evaporator, and is configured to evaporate a first material ; A distribution tube according to any one of embodiments 11 to 14, which is a first distribution tube of the device, wherein the first distribution tube is in fluid communication with the first material evaporator; several first nozzles are located in the first distribution tube In a distribution tube housing; and a second material source, including a second material evaporator, which is assembled to evaporate a second material; and a second distribution tube, including a second distribution tube housing , Wherein the second distribution pipe is in fluid communication with the second material evaporator; and several second nozzles are located in the second distribution pipe housing; wherein at least one of the first nozzles and at least one of the second nozzles A distance between one is less than or equal to 50 mm; or at least one of the first nozzles is assembled to provide a first distribution direction and at least one of the second nozzles is assembled to provide a first two The distribution direction, in which the first distribution direction and the second distribution direction are arranged in such a manner that the deviation from the parallel is at most 5°.

實施例15. 根據前述實施例之任一者之用以沈積已蒸發材料之設備或分佈管,其中具有至少2:1之開孔長度對開孔尺寸之比的噴嘴係形成已蒸發有機材料之cos6形蒸汽羽狀物。 Embodiment 15. An apparatus or distribution tube for depositing evaporated material according to any of the preceding embodiments, wherein a nozzle having a ratio of opening length to opening size of at least 2:1 forms cos of evaporated organic material 6 -shaped steam plume.

實施例16. 一種真空沈積腔室,包括根據實施例1至9之任一者之用以沈積已蒸發材料之設備;以及一基板支座,用以在沈積期間支撐基板;其中設備之此些分佈管之至少一者與基板支座之間的距離係少於250mm。 Embodiment 16. A vacuum deposition chamber, including the apparatus for depositing evaporated material according to any one of Embodiments 1 to 9; and a substrate support for supporting the substrate during deposition; wherein these of the apparatus The distance between at least one of the distribution tubes and the substrate support is less than 250mm.

實施例17. 根據實施例16之真空沈積腔室,更包括一遮罩,位於基板支座與設備之間。 Embodiment 17. The vacuum deposition chamber according to Embodiment 16 further includes a mask between the substrate support and the device.

實施例18. 根據實施例16至17之任一者之真空沈積腔室,其中設備係於真空沈積腔室中為可移動的。 Embodiment 18. The vacuum deposition chamber according to any one of Embodiments 16 to 17, wherein the apparatus is movable in the vacuum deposition chamber.

實施例19. 一種用以於一真空沈積腔室中沈積一已蒸發材料於一基板上的方法,真空沈積腔室具有一腔室空間,此方法包括利用配置於腔室空間中之一第一材料蒸發器蒸發一第一材料;提供已蒸發之第一材料至一第一分佈管,第一分佈管包括一第一分佈管殼體,其中第一分佈管係在第一分佈管中為約10-2-10-1mbar之一壓力流體連通於第一材料蒸發器;導引已蒸發之第一材料通過在第一分佈管殼體中之數個第一噴嘴的一或多個噴嘴;其中此些第一噴嘴之此一或多個噴嘴包括一開孔長度及一開孔尺寸且具有大於或等同於2:1之開孔長度對開孔尺寸之一 比;以及朝向在腔室空間中之一基板釋放已蒸發之第一材料至腔室空間中,其中腔室空間提供約10-5至10-7mbar之一壓力。 Embodiment 19. A method for depositing an evaporated material on a substrate in a vacuum deposition chamber, the vacuum deposition chamber has a chamber space, the method includes using a first disposed in the chamber space The material evaporator evaporates a first material; providing the evaporated first material to a first distribution tube, the first distribution tube includes a first distribution tube housing, wherein the first distribution tube is about One pressure of 10 -2 -10 -1 mbar is in fluid communication with the first material evaporator; guiding the evaporated first material through one or more nozzles of the first nozzles in the first distribution tube housing; Wherein the one or more nozzles of the first nozzles include an opening length and an opening size and have a ratio of opening length to opening size greater than or equal to 2:1; and oriented in the chamber space One of the substrates releases the evaporated first material into the chamber space, wherein the chamber space provides a pressure of about 10 -5 to 10 -7 mbar.

實施例20. 根據實施例19之方法,包括利用於腔室空間中的一第二材料蒸發器蒸發一第二材料;提供已蒸發之第二材料至一第二分佈管,第二分佈管包括一第二分佈管殼體,其中第二分佈管係在第二分佈管中為約10-2-10-1mbar之一壓力流體連通於第二材料蒸發器;以及導引已蒸發之第二材料通過在第二分佈管殼體中之數個第二噴嘴的一或多個噴嘴;其中已蒸發之第一材料及已蒸發之第二材料係在少於50mm之一距離分別導引通過第一分佈管之此一或多個第一噴嘴及第二分佈管之此一或多個第二噴嘴,此距離係位於第一分佈管之此一或多個第一噴嘴及第二分佈管之此一或多個第二噴嘴之間;及/或其中已蒸發之第一材料係從在一第一分佈方向中之第一分佈管之此一或多個第一噴嘴釋放,第一分佈方向係平行於第二分佈管之此一或多個第二噴嘴之一第二分佈方向,或從平行排列偏差最多5°;及/或其中第一分佈管與第二分佈管之至少一者的此一或多個噴嘴包括一材料,此材料對已蒸發有機材料係為化學惰性。 Embodiment 20. The method according to embodiment 19, comprising using a second material evaporator in the chamber space to evaporate a second material; providing the evaporated second material to a second distribution tube, the second distribution tube including A second distribution pipe housing, wherein the second distribution pipe is in the second distribution pipe at a pressure of about 10 -2 -10 -1 mbar in fluid communication with the second material evaporator; and guiding the evaporated second The material passes through one or more nozzles of several second nozzles in the second distribution tube housing; wherein the evaporated first material and the evaporated second material are respectively guided through the first at a distance of less than 50 mm The one or more first nozzles of the distribution tube and the one or more second nozzles of the second distribution tube, the distance is located between the one or more first nozzles of the first distribution tube and the second distribution tube Between the one or more second nozzles; and/or where the evaporated first material is released from the one or more first nozzles of the first distribution tube in a first distribution direction, the first distribution direction It is parallel to the second distribution direction of the one or more second nozzles of the second distribution tube, or deviates from the parallel arrangement by at most 5°; and/or where at least one of the first distribution tube and the second distribution tube The one or more nozzles include a material that is chemically inert to the evaporated organic material.

實施例21. 實施例1、6或14之設備,其中第一分佈管及第二分佈管係於一實質上垂直方向中延伸。 Embodiment 21. The apparatus of embodiment 1, 6, or 14, wherein the first distribution tube and the second distribution tube extend in a substantially vertical direction.

綜上所述,雖然本發明已以實施例揭露如上,然其並非用以限定本發明。本發明所屬技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作各種之更動與潤飾。 因此,本發明之保護範圍當視後附之申請專利範圍所界定者為準。 In summary, although the present invention has been disclosed as above with examples, it is not intended to limit the present invention. Those with ordinary knowledge in the technical field to which the present invention belongs can make various modifications and retouching without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention shall be deemed as defined by the scope of the attached patent application.

100:材料沈積配置 100: Material deposition configuration

102a:第一材料蒸發器 102a: First material evaporator

102b:第二材料蒸發器 102b: Second material evaporator

102c:第三材料蒸發器 102c: third material evaporator

106a:第一分佈管 106a: the first distribution tube

106b:第二分佈管 106b: Second distribution tube

106c:第三分佈管 106c: Third distribution tube

712:噴嘴 712: Nozzle

A:區域 A: area

Claims (13)

一種真空沈積腔室,包括:一材料沈積配置,具有複數個分佈管以及提供於該些分佈管中的複數個噴嘴;及一基板支座,用以在沈積期間支撐一基板,其中該材料沈積配置之該些分佈管之至少一者與該基板支座之間的一距離係少於250mm;且其中該些分佈管之一剖面包括一主要區域,該主要區域對應於一三角形之一部分,面對該基板之該些分佈管之一牆的一寬度是小於該些分佈管之該剖面的最大維度;其中該些噴嘴之一長度對尺寸之一比係等同於或大於2:1。 A vacuum deposition chamber includes: a material deposition configuration having a plurality of distribution tubes and a plurality of nozzles provided in the distribution tubes; and a substrate support for supporting a substrate during deposition, wherein the material is deposited A distance between at least one of the distribution tubes and the substrate support is less than 250 mm; and wherein a cross section of the distribution tubes includes a main area, which corresponds to a part of a triangle A width of a wall of the distribution tubes of the substrate is smaller than the largest dimension of the cross-section of the distribution tubes; wherein a ratio of the length to the size of the nozzles is equal to or greater than 2:1. 如申請專利範圍第1項所述之真空沈積腔室,其中該些分佈管之該剖面具有複數個圓角。 The vacuum deposition chamber as described in item 1 of the scope of the patent application, wherein the cross section of the distribution tubes has a plurality of rounded corners. 如申請專利範圍第2項所述之真空沈積腔室,其中該牆之該寬度係為該些分佈管之該剖面之最大維度的30%或更少。 The vacuum deposition chamber as described in item 2 of the scope of the patent application, wherein the width of the wall is 30% or less of the largest dimension of the profile of the distribution pipes. 如申請專利範圍第1或2項所述之真空沈積腔室,其中該些分佈管具有已蒸發材料之一散佈,包含約30°或更少之一角度。 The vacuum deposition chamber as described in item 1 or 2 of the patent application scope, wherein the distribution pipes have one of the evaporated materials dispersed, including an angle of about 30° or less. 如申請專利範圍第1或2項所述之真空沈積腔室,其中相鄰之該些分佈管之該些噴嘴彼此具有少於50mm之一距離。 The vacuum deposition chamber of claim 1 or 2, wherein the nozzles of the adjacent distribution tubes have a distance of less than 50 mm from each other. 如申請專利範圍第5項所述之真空沈積腔室,其中相鄰之該些分佈管之該些噴嘴之間之該距離係為一第一分佈管之一第一噴嘴之一第一中心點及一第二分佈管之一第二噴嘴之一第二中心點之間的一距離。 The vacuum deposition chamber as described in item 5 of the patent application range, wherein the distance between the nozzles of the adjacent distribution tubes is a first center point of a first nozzle of a first distribution tube And a distance between a second center point of a second nozzle of a second distribution tube. 如申請專利範圍第1或2項所述之真空沈積腔室,其中一第一已蒸發材料係於一第一分佈方向中從該些分佈管之一第一分佈管之一或多個第一噴嘴釋放,該第一分佈方向與該些分佈管之一第二分佈管之一或多個第二噴嘴之一第二分佈方向係從平行偏差最多5°。 The vacuum deposition chamber as described in item 1 or 2 of the patent application, wherein a first evaporated material is separated from one or more of the first distribution tubes in a first distribution direction from one of the distribution tubes The nozzles are released, and the first distribution direction deviates from the parallel by a maximum of 5° from the second distribution direction of one of the second distribution tubes of the distribution tubes or one of the plurality of second nozzles. 如申請專利範圍第1項所述之真空沈積腔室,其中該比係形成已蒸發有機材料之cos6形蒸汽羽狀物。 The vacuum deposition chamber as described in item 1 of the scope of the patent application, wherein the ratio forms a cos 6 -shaped vapor plume of evaporated organic material. 如申請專利範圍第1或2項所述之真空沈積腔室,其中該些分佈管之至少一者係用於已蒸發有機材料。 The vacuum deposition chamber as described in item 1 or 2 of the patent application scope, wherein at least one of the distribution tubes is used for evaporated organic materials. 如申請專利範圍第1或2項所述之真空沈積腔室,更包括:一遮罩框架,位於該基板支座(126)與該材料沈積配置(100)之間。 The vacuum deposition chamber as described in item 1 or 2 of the patent application scope further includes: a mask frame located between the substrate support (126) and the material deposition arrangement (100). 如申請專利範圍第10項所述之真空沈積腔室,更包括:一像素遮罩,位於該遮罩框架上,其中該像素遮罩(132)包括複數個像素開口,具有50μm x 50μm或更少之一尺寸。 The vacuum deposition chamber as described in item 10 of the patent application scope further includes: a pixel mask, located on the mask frame, wherein the pixel mask (132) includes a plurality of pixel openings, having 50 μm x 50 μm or more One less size. 如申請專利範圍第1或2項所述之真空沈積腔室,其中該材料沈積配置(100)係在該真空沈積腔室(110)中為可移動的。 The vacuum deposition chamber as described in item 1 or 2 of the patent application scope, wherein the material deposition arrangement (100) is movable in the vacuum deposition chamber (110). 如申請專利範圍第1或2項所述之真空沈積腔室,其中該些分佈管係於一實質上垂直方向中延伸。 The vacuum deposition chamber of claim 1 or 2, wherein the distribution tubes extend in a substantially vertical direction.
TW106123717A 2014-11-07 2015-11-06 Vacuum deposition chamber TWI690611B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
??PCT/EP2014/074089 2014-11-07
WOPCT/EP2014/074089 2014-11-07
PCT/EP2014/074089 WO2016070942A1 (en) 2014-11-07 2014-11-07 Material deposition arrangement and material distribution arrangement for vacuum deposition

Publications (2)

Publication Number Publication Date
TW201805455A TW201805455A (en) 2018-02-16
TWI690611B true TWI690611B (en) 2020-04-11

Family

ID=51871035

Family Applications (3)

Application Number Title Priority Date Filing Date
TW106123717A TWI690611B (en) 2014-11-07 2015-11-06 Vacuum deposition chamber
TW108115443A TW201945565A (en) 2014-11-07 2015-11-06 Material deposition arrangement for vacuum deposition
TW104136582A TWI641709B (en) 2014-11-07 2015-11-06 Material deposition arrangement, distrbution pipe, vacuum deposition chamber and method for vacuum deposition

Family Applications After (2)

Application Number Title Priority Date Filing Date
TW108115443A TW201945565A (en) 2014-11-07 2015-11-06 Material deposition arrangement for vacuum deposition
TW104136582A TWI641709B (en) 2014-11-07 2015-11-06 Material deposition arrangement, distrbution pipe, vacuum deposition chamber and method for vacuum deposition

Country Status (5)

Country Link
JP (1) JP6656261B2 (en)
KR (2) KR101990619B1 (en)
CN (2) CN107502858B (en)
TW (3) TWI690611B (en)
WO (1) WO2016070942A1 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110199050A (en) * 2017-01-31 2019-09-03 应用材料公司 Material deposition arrangement, vacuum deposition system and its method
CN106637091B (en) * 2017-02-24 2019-08-30 旭科新能源股份有限公司 High Temperature Evaporation Furnaces for Thin Film Solar Cell Manufacturing
EP3781721A1 (en) * 2018-04-18 2021-02-24 Applied Materials, Inc. Evaporation source for deposition of evaporated material on a substrate, deposition apparatus, method for measuring a vapor pressure of evaporated material, and method for determining an evaporation rate of an evaporated material
KR20190127661A (en) * 2018-05-04 2019-11-13 어플라이드 머티어리얼스, 인코포레이티드 Evaporation source, vacuum deposition system, and method for depositing evaporation material for depositing evaporation material
CN113365747A (en) * 2019-01-30 2021-09-07 应用材料公司 Method for cleaning vacuum system, method for vacuum processing substrate, and apparatus for vacuum processing substrate
CN109722651B (en) * 2019-02-18 2021-03-23 长江存储科技有限责任公司 Thin film deposition apparatus and gas supply device
TWI755956B (en) * 2020-12-03 2022-02-21 財團法人國家實驗研究院 Gas distribution module and vacuum coating device
WO2025158169A1 (en) * 2024-01-22 2025-07-31 Applied Materials, Inc. Evaporation source, method of coating at least two layers on a substrate and oled device
WO2025168964A1 (en) * 2024-02-05 2025-08-14 Applied Materials, Inc. Method of coating a substrate, evaporation source arrangement, and substrate for display manufacture

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010041376A1 (en) * 2009-09-25 2011-04-07 Von Ardenne Anlagentechnik Gmbh Linear evaporating device for the deposition of sputtering materials on substrates, comprises a heatable primary evaporator and/or a long stretched heatable steam distributor conductively connected with the primary evaporator
CN102312198A (en) * 2010-06-30 2012-01-11 上方能源技术(杭州)有限公司 Evaporation source and evaporation coating device

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002184571A (en) * 2000-12-15 2002-06-28 Denso Corp Manufacturing method of organic EL device
US20040035360A1 (en) * 2002-05-17 2004-02-26 Semiconductor Energy Laboratory Co., Ltd. Manufacturing apparatus
JP4557170B2 (en) * 2004-11-26 2010-10-06 三星モバイルディスプレイ株式會社 Evaporation source
JP4767000B2 (en) * 2005-11-28 2011-09-07 日立造船株式会社 Vacuum deposition equipment
KR101106289B1 (en) * 2006-08-04 2012-01-18 순천향대학교 산학협력단 Linear Deposition Sources for Deposition Processes
US20080131587A1 (en) * 2006-11-30 2008-06-05 Boroson Michael L Depositing organic material onto an oled substrate
JP5081516B2 (en) * 2007-07-12 2012-11-28 株式会社ジャパンディスプレイイースト Vapor deposition method and vapor deposition apparatus
US20100159132A1 (en) * 2008-12-18 2010-06-24 Veeco Instruments, Inc. Linear Deposition Source
WO2010106410A1 (en) * 2009-03-16 2010-09-23 Applied Materials, Inc. Evaporator, coating installation, and method for use thereof
US20100233353A1 (en) * 2009-03-16 2010-09-16 Applied Materials, Inc. Evaporator, coating installation, and method for use thereof
CN102224275B (en) * 2009-04-03 2013-09-11 东京毅力科创株式会社 Deposition head and film forming apparatus
KR101223723B1 (en) * 2010-07-07 2013-01-18 삼성디스플레이 주식회사 Apparatus for thin layer deposition, method for manufacturing of organic light emitting display apparatus using the same, and organic light emitting display apparatus manufactured by the method
WO2012124563A1 (en) 2011-03-14 2012-09-20 シャープ株式会社 Vapor deposition particle emitting device, vapor deposition apparatus, vapor deposition method
FR2981667B1 (en) * 2011-10-21 2014-07-04 Riber INJECTION SYSTEM FOR DEVICE FOR DEPOSITING THIN LAYERS BY VACUUM EVAPORATION
KR102052069B1 (en) * 2012-11-09 2019-12-05 삼성디스플레이 주식회사 Apparatus for organic layer deposition, method for manufacturing of organic light emitting display apparatus using the same, and organic light emitting display apparatus manufactured by the method
CN103966554B (en) * 2013-01-31 2018-08-07 日立造船株式会社 Vacuum deposition apparatus and vacuum deposition method
WO2014167989A1 (en) * 2013-04-12 2014-10-16 大日本印刷株式会社 Vapor deposition mask, vapor deposition mask precursor, vapor deposition mask manufacturing method, and organic semiconductor element manufacturing method
EP3119920A1 (en) * 2014-03-21 2017-01-25 Applied Materials, Inc. Evaporation source for organic material

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010041376A1 (en) * 2009-09-25 2011-04-07 Von Ardenne Anlagentechnik Gmbh Linear evaporating device for the deposition of sputtering materials on substrates, comprises a heatable primary evaporator and/or a long stretched heatable steam distributor conductively connected with the primary evaporator
CN102312198A (en) * 2010-06-30 2012-01-11 上方能源技术(杭州)有限公司 Evaporation source and evaporation coating device

Also Published As

Publication number Publication date
CN107502858B (en) 2020-06-19
TW201805455A (en) 2018-02-16
KR101990619B1 (en) 2019-06-18
JP2017535677A (en) 2017-11-30
KR20170083592A (en) 2017-07-18
TW201629248A (en) 2016-08-16
JP6656261B2 (en) 2020-03-04
TW201945565A (en) 2019-12-01
TWI641709B (en) 2018-11-21
KR102082192B1 (en) 2020-02-27
KR20170086679A (en) 2017-07-26
CN107002221A (en) 2017-08-01
CN107502858A (en) 2017-12-22
WO2016070942A1 (en) 2016-05-12
CN107002221B (en) 2020-03-03

Similar Documents

Publication Publication Date Title
TWI690611B (en) Vacuum deposition chamber
JP6513201B2 (en) Material deposition apparatus, vacuum deposition system, and material deposition method
JP6657239B2 (en) Nozzle for dispensing assembly of material deposition source configuration, material deposition source configuration, vacuum deposition system, and method for depositing material
TWI625876B (en) Linear distribution pipe, a material deposition arrangement and a vacuum deposition apparatus using the same, and a method therefor
TWI619823B (en) Vacuum deposition system and method for depositing material therein
TWI660057B (en) Material deposition arrangement, vacuum deposition system and method therefor
JP6488397B2 (en) Material source arrangement and nozzle for vacuum deposition
JP6543664B2 (en) Vacuum deposition chamber

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees