TWI689077B - Semiconductor sensing device and manufacturing method thereof - Google Patents

Abstract

A semiconductor sensing device including a nanowire conductive layer, a semiconductor sensing layer and a conductive layer is provided. The nanowire conductive layer includes a plurality of connected conductive nanowires, wherein gaps are formed between the conductive nanowires. The semiconductor sensing layer is electrically connected to the nanowire conductive layer. The conductive layer is electrically connected to the semiconductor sensing layer. The semiconductor sensing layer is disposed between the nanowire conductive layer and the conductive layer. A manufacturing method of the semiconductor sensing device is also provided.

Description

Semiconductor sensing device and manufacturing method thereof

The invention relates to a semiconductor device and a manufacturing method thereof, and in particular to a semiconductor sensing device and a manufacturing method thereof.

With the development of science and technology, the application of semiconductors has become more and more common in human life, and in many applications, the semiconductor has a very high sensitivity to the gas contacted, using the gas sensing device made by the semiconductor It is also getting more and more attention. Specifically, after a gas sensing semiconductor contacts a specific gas, its own electrical characteristics (such as resistance) will change accordingly. Therefore, by detecting the electrical characteristics of the semiconductor, the user can observe Is there any specific gas mentioned above in the environment where the semiconductor is located?

When a semiconductor is used for gas sensing, the contact area between the semiconductor and air directly affects the sensing sensitivity of the semiconductor, so an electrode covering the semiconductor will reduce the decrease in sensing sensitivity. In addition, the existing technology makes the electrode electrically connected to the semiconductor have a special structure, or uses the electrode And the semiconductor is made into multiple microstructures to increase the contact area with air. However, when fabricated into multiple sub-structures or microstructures, these microstructures of the electrode tend to fall into the gaps between these microstructures of the semiconductor, resulting in an undesirable structure.

The present invention provides a semiconductor sensing device with good sensing sensitivity.

The invention provides a method for manufacturing a semiconductor sensing device, which can produce a high-sensitivity semiconductor sensing device with a nanowire structure.

The invention provides a semiconductor sensing device, which includes a nanowire conductive layer, a semiconductor sensing layer, and a conductive layer. The nanowire conductive layer includes a plurality of connected conductive nanowires, wherein gaps are formed between the conductive nanowires. The semiconductor sensing layer is electrically connected to the nanowire conductive layer. The conductive layer is electrically connected to the semiconductor sensing layer. The semiconductor sensing layer is disposed between the nanowire conductive layer and the conductive layer.

The invention provides a method for manufacturing a semiconductor sensing device, which includes: forming a conductive layer on a substrate, forming a semiconductor sensing layer, and forming a nanowire conductive layer on the semiconductor sensing layer by a drop plating method. The semiconductor sensing layer covers at least part of the conductive layer. The nanowire conductive layer includes a plurality of connected conductive nanowires, and a gap is formed between the conductive nanowires.

In an embodiment of the invention, the material of the above-mentioned semiconductor sensing layer includes an organic semiconductor material.

In an embodiment of the invention, the material package of the above-mentioned semiconductor sensing layer Including inorganic semiconductor materials.

In an embodiment of the invention, the above-mentioned semiconductor sensing device further includes a substrate, and the conductive layer is disposed between the semiconductor sensing layer and the substrate.

In an embodiment of the invention, the above-mentioned semiconductor sensing device further includes a dielectric layer disposed between the semiconductor sensing layer and the conductive layer and between the semiconductor sensing layer and the substrate, wherein the conductive layer covers part The substrate and the dielectric layer cover part of the conductive layer and part of the substrate. The semiconductor sensing layer covers the dielectric layer and part of the conductive layer exposed by the dielectric layer. The nanowire conductive layer is disposed on the semiconductor sensing layer.

In an embodiment of the invention, the conductive nanowires described above are randomly connected to form a nanowire conductive layer.

In an embodiment of the present invention, the material of the semiconductor sensing layer includes indium gallium zinc oxide, tin dioxide, zinc oxide, iron oxide, or a combination thereof.

In an embodiment of the invention, the above-mentioned semiconductor sensing layer includes a plurality of semiconductor sensing pillars, and the semiconductor sensing pillars extend from a side near the conductive layer to a side near the nanowire conductive layer.

Based on the above, the semiconductor sensing device in the embodiment of the present invention can increase the area where the semiconductor sensing layer can contact air through the nanowire conductive layer, thereby improving the sensitivity of sensing. At the same time, these conductive nanowires of the nanowire conductive layer can avoid being caught in the gap of the semiconductor sensing layer. The manufacturing method of the semiconductor sensing device in the embodiment of the present invention can form a nanowire conductive layer on the semiconductor sensing layer by a drop plating method, and then manufacture a highly sensitive semiconductor sensing device.

In order to make the above features and advantages of the present invention more obvious and understandable, The embodiments are described in detail in conjunction with the attached drawings as follows.

100, 200, 300 ‧‧‧ semiconductor sensing device

110‧‧‧Nano wire conductive layer

112‧‧‧Conducting Nanowire

120‧‧‧semiconductor sensing layer

122‧‧‧Semiconductor sensing column

130‧‧‧conductive layer

140‧‧‧ substrate

150‧‧‧dielectric layer

FIG. 1A is a cross-sectional view of the semiconductor sensing device in the first embodiment of the present invention.

FIG. 1B is a schematic diagram of voltage versus current density of the semiconductor sensing device in the first embodiment of the invention.

2 is a cross-sectional view of a semiconductor sensing device in a second embodiment of the invention.

3A to 3F are schematic diagrams of the steps of the manufacturing method of the semiconductor sensing device in the third embodiment of the present invention.

4 is a schematic diagram of the current density change of the semiconductor sensing device to the gas to be measured with different concentrations in the third embodiment of the present invention.

FIG. 5A is a schematic diagram of measuring the amount of change in current slope at different gas concentrations to be measured with conductive nanowires of different densities in the third embodiment of the present invention.

FIG. 5B is a schematic diagram of measuring the change ratio of current concentration under different gas concentrations to be measured with conductive nanowires with different densities in the third embodiment of the present invention.

FIG. 1A is a cross-sectional view of the semiconductor sensing device in the first embodiment of the present invention. Please refer to FIG. 1A. In this embodiment, the semiconductor sensing device 100 includes a nanowire conductive layer 110, a semiconductor sensing layer 120, and a conductive layer 130. The nanowire conductive layer 110 includes a plurality of connected conductive nanowires 112, wherein these conductive nanowires A gap is formed between 112. The semiconductor sensing layer 120 is electrically connected to the nanowire conductive layer 110. The conductive layer 130 is electrically connected to the semiconductor sensing layer 120, wherein the semiconductor sensing layer 120 is disposed between the nanowire conductive layer 110 and the conductive layer 130. In this embodiment, the gap formed between the conductive nanowires 112 of the semiconductor sensing device 100 can make the semiconductor sensing layer 120 more easily contact with air, thereby improving the sensing sensitivity of the semiconductor sensing device 100 .

1A, in the first embodiment of the present invention, the semiconductor sensing device further includes a substrate 140, and the conductive layer 130 is disposed between the semiconductor sensing layer 120 and the substrate 140. In this embodiment, these conductive nanowires 112 are randomly connected to form a nanowire conductive layer 110.

Specifically, referring to FIG. 1A, the material of the semiconductor sensing layer 120 includes an organic semiconductor material, but is not limited thereto. In other embodiments, the material of the semiconductor sensing layer 120 includes inorganic semiconductor materials, but is not limited thereto. More specifically, please refer to FIG. 1A. In an embodiment of the present invention, the material of the semiconductor sensing layer 120 includes indium gallium zinc oxide (IGZO), which can sense moisture in the air ( That is, the humidity of the air). 1A, in another embodiment of the present invention, the material of the semiconductor sensing layer 120 includes tin dioxide (Tin dioxide, SnO ₂ ), zinc oxide (Zinc oxide, ZnO), or iron oxide (Iron Oxide, Fe ₂ O ₃ ), which can sense gas in the air. Referring to FIG. 1A, in yet another embodiment of the present invention, the material of the semiconductor sensing layer 120 includes tin dioxide (Tin dioxide, SnO ₂₎ , which can sense carbon monoxide (CO) in the air. In other embodiments of the present invention, the material of the semiconductor sensing layer 120 is not limited to the above-mentioned organic semiconductor material or inorganic semiconductor material or semiconductor oxide material, and the material of the semiconductor sensing layer 120 may further include the above-mentioned materials according to the gas to be measured Combination with other materials.

More specifically, in the embodiment of the present invention, by electrically connecting the nanowire conductive layer 110 and the conductive layer 130 of the semiconductor sensing device 100, the semiconductor sensing layer 120 can be electrically measured. In the embodiment of the present invention, when the semiconductor sensing layer 120 contacts a gas to be measured, the electrical characteristics (eg, resistance or conductivity) of the semiconductor sensing layer 120 will change, and the above electrical characteristics can be changed by The electrical measurement of the semiconductor sensing layer 120 is known.

FIG. 1B is a schematic diagram of voltage versus current density of the semiconductor sensing device 100 in the first embodiment of the invention. Referring to FIG. 1B, in the first embodiment of the present invention, the conductive nanowires 112 are, for example, silver nanowires, and the material of the semiconductor sensing layer 120 includes, for example, polythiophene conjugated polymer (P3HT). It can be seen from FIG. 1B that the nanowire conductive layer 110 of this embodiment can be effectively used as an electrode of the semiconductor sensing device 100, so that the semiconductor sensing layer 120 can be electrically measured to know that the semiconductor sensing layer 120 is in contact The concentration of the gas to be measured.

2 is a cross-sectional view of a semiconductor sensing device in a second embodiment of the invention. 2, the semiconductor sensing device 200 in the second embodiment of the present invention is similar to the semiconductor sensing device 100 described above, but the difference is that the semiconductor sensing layer 120 includes a plurality of semiconductor sensing pillars 122. These semiconductors The sensing pillar 122 extends from the side near the conductive layer 130 to the side near the nanowire conductive layer 110. Therefore, in this embodiment, the semiconductor sensing device 200 can use these conductive nanowires 112 to increase the sensitivity of the sensing, the semiconductor sensing layer 120 formed by the semiconductor sensing pillars 122 may have a larger surface area in contact with air, thereby improving the sensitivity of the sensing. At the same time, in this embodiment, since the conductive nanowires 112 are randomly connected, it can avoid falling into the gap between the semiconductor sensing pillars 122 while forming the nanowire conductive layer 110, and thus can be maintained Good quality.

3A to 3F are schematic diagrams of the steps of the manufacturing method of the semiconductor sensing device in the third embodiment of the present invention. It should be noted that FIG. 3F is a partially enlarged cross-sectional view of FIG. 3E. Please refer to FIGS. 3A to 3F. In the third embodiment of the present invention, the manufacturing method of the semiconductor sensing device 300 includes forming a conductive layer 130 on the substrate 140, forming a semiconductor sensing layer 120 and using a drop plating method on the semiconductor A nanowire conductive layer 110 is formed on the sensing layer 120. The semiconductor sensing layer 120 covers at least a part of the conductive layer 130, wherein the nanowire conductive layer 110 includes a plurality of connected conductive nanowires 112, and a gap is formed between the conductive nanowires 112. In detail, in this embodiment, the nanowire layer 110 is formed by, for example, dropping a solution of a plurality of conductive nanowires 112 on the semiconductor sensing layer 120 and drying (for example, by baking) The semiconductor sensing layer 120 with a solution of conductive nanowires 112 is dropped to form these conductive nanowires 112 into a nanowire conductive layer 110.

In detail, please refer to FIGS. 3A to 3F. In the third embodiment of the present invention, the semiconductor sensing device 300 further includes a dielectric layer 150 disposed between the semiconductor sensing layer 120 and the conductive layer 130 and Between the semiconductor sensing layer 120 and the substrate 140. The conductive layer 130 covers part of the substrate 140, the dielectric layer 150 covers part of the conductive layer 130 and part of the substrate 140, and the semiconductor sensing layer 120 covers the dielectric layer 150 and the dielectric layer A portion of the conductive layer 130 exposed at 150 and the nanowire conductive layer 110 are disposed on the semiconductor sensing layer 120.

In other words, please refer to FIGS. 3A to 3F. In the manufacturing method of the semiconductor sensing device 300 according to the third embodiment of the present invention, after forming the conductive layer 130 on the substrate 140, it further includes forming a dielectric layer 150 On part of the conductive layer 130 and the substrate 140 exposed by the conductive layer 130, the semiconductor sensing layer 120 further covers the dielectric layer 150.

In detail, please refer to FIG. 3B and FIG. 3C. In the third embodiment of the present invention, in the manufacturing method of the semiconductor sensing device 300, after the dielectric layer 150 is formed, the dielectric layer 150 is further etched to define An active area (that is, an area mainly sensing gas), for example, the dielectric layer 150 is etched by plasma, but it is not limited thereto. Please refer to FIGS. 3B and 3D. In this embodiment, the formation of the dielectric layer 150 and the semiconductor sensing layer 120 are all formed by spin coating, but not limited thereto.

FIG. 4 is a schematic diagram of the current density change of the semiconductor sensing device with different concentrations of the gas to be measured in the third embodiment of the present invention. Referring to FIG. 4, in the third embodiment of the present invention, the material of the semiconductor sensing layer 120 includes, for example, P3HT, the semiconductor sensing device 300 is placed in an environment containing nitrogen, and the gas to be measured is ammonia (Ammonia, NH ₃ ) Where the detection time of each concentration is, for example, 300 seconds, and the response time after each detection of the gas to be measured at a concentration is, for example, 300 seconds. As can be seen from FIG. 4, the higher concentration of the gas to be measured can cause the current density of the semiconductor sensing device 300 to drop faster, so the semiconductor sensing device 300 can provide high-sensitivity gas sensing.

FIG. 5A is a schematic diagram of measuring the amount of change in current slope at different gas concentrations to be measured with conductive nanowires of different densities in the third embodiment of the present invention. FIG. 5B is a schematic diagram of measuring the change ratio of current concentration under different gas concentrations to be measured with conductive nanowires with different densities in the third embodiment of the present invention. Specifically, please refer to FIG. 3E, FIG. 5A and FIG. 5B, the material of the conductive nano wires 112 in the nano conductive layer 110 is, for example, silver, and the conductive nano wires 112 are, for example, soluble in isopropyl alcohol (isopropyl alcohol) alcohol, IPA) to form a solution, by dissolving different amounts of conductive nanowires 112, the nano conductive layer 110 formed after the drop plating has conductive nanowires 112 with different densities. In detail, FIG. 5A shows the data points measured when the gas to be measured (for example, ammonia) is just added, and FIG. 5B shows the addition of the gas to be measured (for example, ammonia). Data points measured after five minutes. It can also be seen from FIGS. 5A and 5B that the higher the density of the conductive nanowire 112 in this embodiment, the sensitivity of the semiconductor sensing device 300 can be improved.

In summary, the semiconductor sensing device in the embodiment of the present invention can increase the area where the semiconductor sensing layer can contact the outside air and the gas to be measured through the gap formed by the nanowire conductive layer, thereby improving the sensing Sensitivity. At the same time, these conductive nanowires of the nanowire conductive layer can avoid being caught in the gap of the semiconductor sensing layer with a microstructure. The manufacturing method of the semiconductor sensing device in the embodiment of the present invention can form a nanowire conductive layer on the semiconductor sensing layer by a drop plating method, which is suitable for application on a semiconductor sensing layer with a microstructure, and is further fabricated High-sensitivity semiconductor sensing device.

Although the present invention has been disclosed as above with examples, it is not intended to limit the Inventions, any person with ordinary knowledge in the technical field to which they belong, can make some changes and modifications without departing from the spirit and scope of the present invention. quasi.

200‧‧‧Semiconductor sensing device

110‧‧‧Nano wire conductive layer

112‧‧‧Conducting Nanowire

120‧‧‧semiconductor sensing layer

122‧‧‧Semiconductor sensing column

130‧‧‧conductive layer

140‧‧‧ substrate

Claims (13)

A semiconductor sensing device includes: a nanowire conductive layer including a plurality of connected conductive nanowires, wherein a gap is formed between the conductive nanowires; a semiconductor sensing layer is electrically connected to the nanowire A conductive layer; a conductive layer electrically connected to the semiconductor sensing layer, wherein the semiconductor sensing layer is disposed between the nanowire conductive layer and the conductive layer; a substrate, the conductive layer is disposed on the semiconductor sensing layer And the substrate; and a dielectric layer disposed between the semiconductor sensing layer and the conductive layer and between the semiconductor sensing layer and the substrate, wherein the conductive layer covers part of the substrate, the dielectric The layer covers part of the conductive layer and part of the substrate, the semiconductor sensing layer covers the dielectric layer and part of the conductive layer exposed by the dielectric layer, the nanowire conductive layer is disposed on the semiconductor sensing layer on. The semiconductor sensing device as described in item 1 of the patent application range, wherein the material of the semiconductor sensing layer includes an organic semiconductor material. The semiconductor sensing device as described in item 1 of the patent application range, wherein the material of the semiconductor sensing layer includes an inorganic semiconductor material. The semiconductor sensing device as described in item 1 of the patent application range, wherein the conductive nanowires are randomly connected to form the nanowire conductive layer. The semiconductor sensing device as described in item 1 of the patent application range, wherein the material of the semiconductor sensing layer includes indium gallium zinc oxide, tin dioxide, zinc oxide, iron oxide Or a combination thereof. The semiconductor sensing device as described in item 1 of the patent application range, wherein the semiconductor sensing layer includes a plurality of semiconductor sensing pillars, and the semiconductor sensing pillars conduct electricity from a side near the conductive layer toward the nanowire One side of the layer extends. A manufacturing method of a semiconductor sensing device includes: forming a conductive layer on a substrate; after forming the conductive layer on the substrate, forming a dielectric layer on part of the conductive layer and the substrate exposed by the conductive layer Forming a semiconductor sensing layer, the semiconductor sensing layer covering at least part of the conductive layer; and forming a nanowire conductive layer on the semiconductor sensing layer by a drop plating method, wherein the nanowire conductive layer includes A plurality of connected conductive nanowires, and a gap is formed between the conductive nanowires. The method for manufacturing a semiconductor sensing device as described in item 7 of the patent application range, wherein the material of the semiconductor sensing layer includes an organic semiconductor material. The method for manufacturing a semiconductor sensing device as described in item 7 of the patent application range, wherein the material of the semiconductor sensing layer includes an inorganic semiconductor material. The method for manufacturing a semiconductor sensing device as described in item 7 of the patent application scope, wherein after the step of forming the semiconductor sensing layer, the semiconductor sensing layer further covers the dielectric layer. The method for manufacturing a semiconductor sensing device as described in item 7 of the patent application range, wherein the nanowire conductive layer includes a plurality of conductive nanowires, and the conductive nanowires They are randomly connected to form the nanowire conductive layer. The method for manufacturing a semiconductor sensing device as described in item 7 of the patent application range, wherein the semiconductor sensing layer includes a plurality of semiconductor sensing pillars, and the semiconductor sensing pillars approach the nano from a side near the conductive layer One side of the rice noodle conductive layer extends. The method for manufacturing a semiconductor sensing device as described in item 7 of the patent application range, wherein the material of the semiconductor sensing layer includes indium gallium zinc oxide, tin dioxide, zinc oxide, iron oxide, or a combination thereof.

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