TWI688820B - Impurity removal assembly of light-transmitting thin film on mask glass substrate - Google Patents

Abstract

A light-transmitting thin film impurity removal assembly on a reticle glass substrate is used to remove impurities from the reticle. The reticle includes a glass substrate, an aluminum frame located above the glass substrate, and a transparent window located above the aluminum frame A light film (pellicle) is used to receive the impurity particles above; the light-transmitting film impurity removal component includes a main control mechanism; a light-transmitting film height detector is electrically connected to the main control mechanism for detecting the overall light-transmitting film Highly distributed; a first photographic electromechanical device connected to the main control mechanism is used to find the geometric position of the impurity particles on the light-transmitting film, and its image is used to determine the distribution of the impurity particles relative to the light-transmitting film; a second The electromechanical camera is connected to the main control mechanism and used to determine the height of the impurity particles on the light-transmitting film. It uses the image focusing method to determine the height of the impurity particles relative to the light-transmitting film; wherein the light-transmitting film height detector The first camera and the second camera transmit the detected signal back to the main control mechanism, and the main control mechanism records the value and forms a three-dimensional image of the impurity particles on the light-transmitting film.

Description

Impurity removal assembly of light-transmitting thin film on mask glass substrate

The invention relates to an impurity removal mechanism of a photomask, in particular to a light-transmitting film impurity removal component on a glass substrate of a photomask.

Generally, a photomask includes a glass substrate, an aluminum frame is formed above the glass substrate, and then a transparent film (pellicle) is installed above the aluminum frame, which is a highly transparent film formed of a metal material to allow light to pass through. The main purpose of the light-transmitting film is to receive the impurity particles above, so that the impurity particles will not fall above the glass substrate. Therefore, when the irradiation light is focused on the glass substrate, it will not be affected by the impurity particles and affect the quality of imaging. This is the method adopted by the conventional technology.

However, this method still makes it possible for impurity particles to fall on the transparent film, so it will also affect the focusing ability of the passing beam. In particular, the element size of semiconductor manufacturing processes is getting smaller and smaller, so the resolution of the focal length must also be higher and higher, so the original impurity particles on the light-transmitting film may also affect the irradiation beam at ultra-high resolution Focusing ability, it is necessary to propose a further way to improve this defect, in order to increase the focusing ability of the irradiation beam.

The currently conceivable way is to remove the impurity particles from the light-transmitting film. However, this technique is quite difficult, and it cannot be effectively removed in the conventional technical field to improve the overall analytical ability.

Therefore, the present case hopes to propose a brand-new light-transmitting film impurity removal device on a mask glass substrate to solve the above-mentioned defects in the prior art.

Therefore, the purpose of the present invention is to solve the above-mentioned conventional technical problems. In the present invention, a light-transmitting film impurity removal device on a mask glass substrate is proposed, which uses a laser detector, which can select an appropriate laser beam It does not penetrate the light-transmitting film, so the height of the entire light-transmitting film can be detected, which is insurmountable in the conventional technology. Furthermore, two digital imaging cameras are used to obtain the coordinate points and heights of the impurity particles on the light-transmitting film, and then the probe is used to remove the impurity particles, which can be achieved in the prior art as a whole. Moreover, it effectively increases the focusing ability of the light irradiated on the reticle. For the current semiconductor manufacturing process, the size of the component is getting smaller and smaller. This case effectively improves the entire image quality and increases the accuracy, so it can be improved overall. Semiconductor manufacturing capabilities

In order to achieve the above object, the present invention proposes a light-transmitting thin film impurity removal device on a mask glass substrate, which is applied to the impurity removal of a mask, wherein the mask includes a glass substrate, and a glass substrate is formed above the glass substrate An aluminum frame, in which a light-transmissive film (pellicle) is installed above the aluminum frame, which is a highly transparent film formed of a metal material to allow light to pass through; the light-transmitting film is used to receive the impurity particles above, so that the impurity particles are not Will fall above the glass substrate; where the light-transmitting film impurity removal component includes a main control mechanism for controlling the operation of all mechanisms; a light-transmitting film height detector, electrically connected to the main control mechanism, is used for Detecting the height distribution of the overall light-transmitting film; a first camera, electrically connected to the main control mechanism, is used to find the geometric position of the impurity particles on the light-transmitting film, and the way of applying the image determines the relative particle size The distribution of the light-transmitting film; a second camera, electrically connected to the main control mechanism, is used to determine the height of the impurity particles on the light-transmitting film, which uses image focusing to determine the impurity particles relative to the light-transmitting film Height; wherein the light-transmitting film height detector, the first camera, and the second camera transmit the detected signal back to the main control mechanism, and the main control mechanism records the value and constitutes the impurity particles in the Three-dimensional image on the transparent film.

The features and advantages of the present invention can be further understood from the following description. Please refer to the drawings when reading.

1: Mask

2: main control agency

10: Glass substrate

20: Aluminum frame

30: Transparent film

40: Impurity particles

50: Translucent film height detector

51: Laser detector

60: The first camera

70: Second camera

80: Probe

81: Adhesive

85: Probe clamping mechanism

90: Probe shift detection mechanism

91: Level correction camera

92: Vertical correction camera

Figure 1 shows the schematic of the photomask in this case.

Figure 2 shows an exploded view of the components of the photomask in this case.

Figure 3 shows the operation diagram of the light-transmitting film height detector in this case.

FIG. 4 shows a schematic diagram of the height difference of the light-transmitting film and the size of impurity particles in this case.

Figure 5 shows a schematic diagram of the operation of the first camera in this case.

Figure 6 shows a schematic diagram of the operation of the second camera in this case.

7 shows a schematic diagram of the operation of the probe for removing impurity particles in this case.

Figure 8 shows the operation diagram of the level correction camera in this case.

Figure 9 shows the operation diagram of the vertical correction camera in this case.

Figure 10 shows a block diagram of the main components of this case.

With regard to the structure and composition of the case, as well as the effects and advantages it can produce, in conjunction with the drawings, a preferred embodiment of the case is described in detail below.

Please refer to FIG. 1 to FIG. 10, which shows that the light-transmitting film impurity removal device on the mask glass substrate of the present invention is applied to the impurity removal of the mask 1, as shown in FIGS. 1 and 2, wherein the light The cover 1 includes a glass substrate 10, an aluminum frame 20 is formed above the glass substrate 10, and then a transparent film (pellicle) 30 is installed above the aluminum frame 20, which is a highly transparent film formed of metal Light flux Ever. The light-transmitting film 30 is used to receive the impurity particles 40 above, so that the impurity particles 40 will not fall above the glass substrate 10. The light-transmitting film impurity removal component of this case includes the following components: a main control mechanism 2 for controlling the operation of all mechanisms in the case; a light-transmitting film height detector 50 electrically connected to the main control mechanism 2 for detecting the whole The height distribution of the light-transmitting film 30. In this case, the light-transmitting film height detector 50 is a laser detector 51, and the laser detector 51 is used to scan the light-transmitting film 30 along a certain coordinate, as shown in FIG. 3, The laser emitted by the laser detector 51 can be focused on the light-transmitting film 30, and the overall path length is measured by reflection, and the height of the light-transmitting film 30 corresponding to the detection point is obtained. By using the laser detector 51 to scan back and forth along the light-transmitting film 30 on a predetermined route, the overall height distribution of the light-transmitting film 30 can be established.

The light-transmitting film 30 is a highly transparent material, so ordinary light beams will pass through the light-transmitting film 30, so the height distribution of the light-transmitting film 30 cannot be obtained by using a general light beam. In this case, a laser detector is used, and an appropriate laser can be selected to find a light beam suitable for the reflection of the light-transmitting film 30, so the overall height distribution of the light-transmitting film 30 can be detected.

Generally, the overall distribution of the light-transmitting film is not flat, but there will be a height drop. As shown in Figure 4, for example, the height difference of the light-transmitting film is 5 μm, and the impurity particles on the light-transmitting film may also be 5 μm, so the light is transparent The height difference of the film will greatly affect the geometric height of the entire impurity particles formed on the light-transmitting film, so it is necessary to clearly determine the height distribution of the light-transmitting film.

In this case, the position and height of the impurity particles 40 deposited on the light-transmitting film 30 are obtained by means of imaging photography and focusing. So in this case, two digital imaging cameras were used to obtain the above data.

A first camera 60 is electrically connected to the main control mechanism 2 and is used to find out the geometric position of the impurity particles 40 on the light-transmitting film 30. The image method determines the relative position of the impurity particles 40 relative to the light-transmitting film 30 distributed. The first camera 60 may be a CCD or CMOS camera. As shown in FIG. 5, the first camera 60 is used to scan back and forth along the light-transmitting film 30 on a predetermined route to create an image of the entire plane of the light-transmitting film 30. Through image analysis, the position of the impurity particles 40 on the transparent film 30 is found. The main reason is that the image of the light-transmitting film 30 is homogeneous and highly transparent, so it is a relatively light color, so the impurity particles 40 on the light-transmitting film 30 can be easily determined by image analysis The coordinate points of the impurity particles 40.

A second camera 70 is electrically connected to the main control mechanism 2 and is used to determine the height of the impurity particles 40 on the light-transmitting film 30, which determines the height of the impurity particles 40 relative to the light-transmitting film 30 using image focusing . The second camera 70 may be a CCD or CMOS camera. The second camera 70 determines the height of each impurity particle 40 according to the coordinate points of the impurity particles 40 obtained by the first camera 60. The method is to move the second camera 70 to a corresponding impurity particle 40 according to the coordinate point of the impurity particle 40 (as shown in FIG. 6), and then adjust the height of the second camera 70 to capture the reflected light Focusing and reflecting light from the surface of the impurity particles 40 can determine the height of the impurity particles 40. When the scattering range of the reflected light is the smallest, the height measured at this time is the height of the impurity particles 40.

As shown in FIG. 10, the light-transmitting film height detector 50, the first camera 60, and the second camera 70 transmit the detected signals back to the main control mechanism 2 for recording by the main control mechanism 2 The numerical values also constitute a three-dimensional image of the impurity particles 40 on the light-transmitting film 30.

A probe 80 is connected to the main control mechanism 2, and an adhesive 81 is attached below the probe 80, which can be moved above the impurity particles 40 by the guidance of the main control mechanism 2 and then move downward to apply its adhesion The agent 81 removes the impurity particles 40.

As shown in FIG. 7, the method of removing the impurity particles 40 is to move the probe 80 to the coordinates of the impurity particles 40 measured by the first camera 60 via the guidance of the main control mechanism 2, Then, the height of the light-transmitting film 30 measured by the laser detector 51 at the coordinates and the height of the impurity particles 40 can be obtained as the overall height, and then moved down according to the obtained overall height The distance determined by the probe 80 to the height can cause the adhesive 81 below the probe 80 to touch the impurity particles 40 and remove the impurity particles 40 via the adhesive 81. This procedure is used to move the probe 80 one by one to remove all the foreign particles 40 on the transparent film 30. Therefore, the light incident above the mask 1 can be effectively irradiated to the glass substrate 10 below the light-transmitting film 30 without affecting the quality of the irradiation.

The probe 80 is clamped by a probe clamping mechanism 85, and the probe clamping mechanism 85 moves the probe 80 above the impurity particles 40 through the guidance of the main control mechanism 2 and then Moving down, the impurity particles 40 are removed using its adhesive 81.

When the probe clamping mechanism 85 clamps the probe 80, the probe 80 may be skewed, and the position of the probe 80 may be shifted. Therefore, it is necessary to perform Correction.

The case also includes a probe offset detection mechanism 90 electrically connected to the main control mechanism 2, which is used to detect the offset of the holding position of the probe 80 on the probe holding mechanism 85, and according to the The offset corrects the position of the probe 80.

The probe offset detection mechanism 90 includes a horizontal calibration camera 91 for detecting and correcting the horizontal offset of the probe 80 in a manner that the main control mechanism 2 controls the probe clamping mechanism 85 Move below the level correction camera 91 (as shown in FIG. 8), the horizontal plane image of the probe 80 is taken in by the level correction camera 91 and returned to the main control mechanism 2, and the main control mechanism 2 Horizontal plane image The horizontal coordinate of the probe 80 is compared with the preset horizontal coordinate of the probe 80 to obtain the horizontal offset of the probe 80.

And the probe offset detection mechanism 90 still includes a vertical correction camera 92, which is used to detect and correct the vertical offset of the probe 80 in a manner that the main control mechanism 2 controls the probe clamping The mechanism 85 moves to the front of the vertical correction camera 92 (as shown in FIG. 9 ), and the vertical plane image of the probe 80 is taken in by the vertical correction camera 92 and returned to the main control mechanism 2, which is controlled by the main control mechanism 2 According to the vertical coordinate of the probe 80 in the vertical plane image being compared with the preset vertical coordinate of the probe 80, the vertical offset of the probe 80 is obtained.

The main control mechanism 2 corrects the horizontal and vertical positions of the probe 80 according to the detected horizontal offset and vertical offset of the probe 80, so that the probe 80 can accurately move to the impurity particles 40 to remove the impurity particles 40.

In this case, the main control mechanism 2, the transparent film height detector 50, the first camera 60, the second camera 70, the probe clamping mechanism 85 and the probe offset detection mechanism 90 are It can be installed on a machine (not shown in the figure), and the moving mechanism designed by the machine can move the above-mentioned components to the set position according to the predetermined stroke during detection. This machine is known Those skilled in the art are not novel, so their details are not repeated here.

According to the method of the present invention, since a laser detector is used in this case, it can select an appropriate laser beam without penetrating the transparent film, so it can detect the height of the entire transparent film, which is a conventional technology The insurmountable. Furthermore, two digital imaging cameras are used to obtain the coordinate points and heights of the impurity particles on the light-transmitting film, and then the probe is used to remove the impurity particles, which can be achieved in the prior art as a whole. And it effectively increases the focusing ability of the light irradiated on the photomask. The manufacturing process requires the trend of smaller and smaller component sizes. In this case, the entire image quality is effectively improved, and the accuracy is increased, so the overall semiconductor manufacturing capability can be improved.

In summary, the humanized and considerate design of this case is quite in line with actual needs. Compared with the conventional technology, the specific improvement of the existing deficiency is obviously a breakthrough progress advantage, it does have an improvement in efficacy, and it is not easy to achieve. This case has not been disclosed or disclosed in domestic and foreign documents and markets, and has complied with the provisions of the Patent Law.

The above detailed description is a specific description of a feasible embodiment of the present invention, but this embodiment is not intended to limit the patent scope of the present invention, and any equivalent implementation or change without departing from the technical spirit of the present invention should be included in The patent scope of this case.

2‧‧‧Master control organization

50‧‧‧Transparent film height detector

60‧‧‧ First camera

70‧‧‧Second camera

80‧‧‧probe

85‧‧‧Probe clamping mechanism

90‧‧‧Probe offset detection mechanism

91‧‧‧level correction camera

92‧‧‧Vertical camera

Claims (11)

A light-transmitting thin film impurity removal component on a reticle glass substrate is used for removing impurities in a reticle, wherein the reticle includes a glass substrate, an aluminum frame is formed above the glass substrate, and the aluminum frame A transparent film (pellicle) is installed on the top, which is a highly transparent film formed of metal material to allow light to pass through; the transparent film is used to receive the impurity particles above, so that the impurity particles will not fall above the glass substrate; The light-transmitting film impurity removal component includes: a main control mechanism for controlling the operation of all mechanisms; a light-transmitting film height detector electrically connected to the main control mechanism for detecting the height of the whole light-transmitting film Distribution; a first camera, electrically connected to the main control mechanism, is used to find out the geometric position of the impurity particles on the light-transmitting film, and its image is used to determine the distribution of the impurity particles relative to the light-transmitting film; a The second camera, electrically connected to the main control mechanism, is used to determine the height of the impurity particles on the light-transmitting film. It uses image focusing to determine the height of the impurity particles relative to the light-transmitting film; wherein the light-transmitting film The height detector, the first camera, and the second camera transmit the detected signals back to the main control mechanism, and the main control mechanism records the value and forms a three-dimensional image of the impurity particles on the light-transmitting film. According to the light-transmitting film impurity removal component on the reticle substrate of the patent application, the light-transmitting film height detector is a laser detector, and the laser detector is used to Scan the translucent film along a certain coordinate, the laser emitted by the laser detector can be focused on the translucent film, and the overall path length is measured by reflection, and the corresponding detection point is obtained The height of the light-transmitting film; using the laser detector to scan back and forth along the light-transmitting film on a predetermined route, the height distribution of the whole plane of the light-transmitting film can be established. According to the light-transmitting film impurity removal device on the mask glass substrate as described in item 1 of the patent application scope, wherein the first camera is a CCD or CMOS camera. According to the light-transmitting film impurity removal assembly on the reticle glass substrate as described in item 1 of the patent application scope, wherein the first camera is used to scan back and forth along the light-transmitting film on a predetermined route to establish the light-transmitting film The image of the overall plane of the; and through image analysis to find out the position of the impurity particles on the light-transmitting film. According to the light-transmitting film impurity removal device on the reticle glass substrate as described in item 1 of the patent application scope, wherein the second camera is a CCD or CMOS camera. According to the light-transmitting film impurity removal device on the reticle glass substrate as described in item 1 or 4 of the patent application scope, wherein the second camera determines each one according to the coordinate points of the impurity particles obtained by the first camera The height of the impurity particles; the second camera moves to a corresponding impurity particle according to the coordinate point of the impurity particles, and then adjusts the height of the second camera to capture the focus of the reflected light and reflects from the surface of the impurity particles The condition of light determines the height of the impurity particles. When the scattering range of the reflected light is the smallest, the height measured at this time is the height of the impurity particles. According to the light-transmitting film impurity removal assembly on the reticle glass substrate described in item 1 of the patent application scope, it also includes a probe connected to the main control mechanism, and an adhesive agent is attached under the probe to pass through the main control Guided by the mechanism, it moves above the impurity particles and then moves downwards, applying its adhesive to remove the impurity particles. According to the light-transmitting film impurity removal assembly on the reticle glass substrate as described in item 7 of the patent application scope, wherein the probe is moved to the impurity particles measured by the first camera under the guidance of the main control mechanism At the coordinate position, and the height of the light-transmitting film measured by the laser detector at the coordinate position plus the height of the impurity particles to obtain the overall height, and then move down according to the obtained overall height The distance determined by the probe to the height can make the adhesive under the probe touch the impurity particles and remove the impurity particles through the adhesive; apply this procedure to move the probe one by one All the impurity particles on the light-transmitting film are completely removed; therefore, the light incident above the mask can be effectively irradiated to the glass substrate under the light-transmitting film without affecting the quality of the irradiation . According to the light-transmitting film impurity removal assembly on the reticle glass substrate described in item 7 of the patent application scope, it also includes a probe deviation detection mechanism electrically connected to the main control mechanism; wherein the probe is passed through a probe clip Held by a holding mechanism, the probe holding mechanism moves the probe above the impurity particles and then downwards through the guidance of the main control mechanism, and applies the adhesive to remove the impurity particles; wherein The probe offset detection mechanism is used to detect the offset of the holding position of the probe on the probe holding mechanism, and correct the position of the probe according to the offset. According to the light-transmitting film impurity removal assembly on the reticle glass substrate as described in item 9 of the patent application scope, wherein the probe offset detection mechanism includes a level correction camera for horizontally offsetting the probe Detection and correction by means of the main control mechanism controlling the probe clamping mechanism to move below the horizontal correction camera, the horizontal plane image of the probe taken by the horizontal correction camera and returned to the main control mechanism, The main control mechanism obtains the horizontal offset of the probe according to the horizontal coordinate of the probe in the horizontal plane image and the preset horizontal coordinate of the probe; the main control mechanism according to the detected The horizontal offset of the probe corrects the horizontal position of the probe, so that the probe can be accurately moved to the position of the impurity particle to remove the impurity particle. According to the light-transmitting thin film impurity removal component on the reticle glass substrate as described in item 9 of the patent application scope, and the probe offset detection mechanism includes a vertical correction camera for vertical offset of the probe The detection and correction is carried out by the main control mechanism controlling the probe clamping mechanism to move to In front of the vertical correction camera, the vertical plane image of the probe is taken by the vertical correction camera and returned to the main control mechanism, which is based on the vertical coordinates of the probe and the preset The vertical coordinates of the probe are compared to obtain the vertical offset of the probe; the main control mechanism corrects the vertical position of the probe according to the detected vertical offset of the probe, so that the The probe can be accurately moved to the position of the foreign particles to remove the foreign particles.

Images