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TWI688674B - Liquid crystal polymer metallization method - Google Patents

Liquid crystal polymer metallization method Download PDF

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TWI688674B
TWI688674B TW108104179A TW108104179A TWI688674B TW I688674 B TWI688674 B TW I688674B TW 108104179 A TW108104179 A TW 108104179A TW 108104179 A TW108104179 A TW 108104179A TW I688674 B TWI688674 B TW I688674B
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liquid crystal
crystal polymer
polymer material
nickel
layer
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TW108104179A
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TW202030364A (en
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黃耀德
吳昌龍
鄭景宏
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台灣上村股份有限公司
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Abstract

本發明係揭露一種液晶高分子之金屬化方法,首先,對液晶高分子材料進行鹼處理,以清潔與粗化液晶高分子材料之表面。接著,對液晶高分子材料進行活化處理,以利用一活化劑提供金屬離子附著於液晶高分子材料之表面,並對此表面進行改質。再來,對液晶高分子材料進行還原處理,以還原金屬離子為金屬觸媒。最後,配合金屬觸媒之催化活性,以化鍍法形成一鎳層或一鎳合金層,以供一電鍍銅層形成於鎳層或鎳合金層上。本發明不需額外使用物理方式處理液晶高分子材料之表面,而直接以濕製程進行處理,以利用鎳提升銅箔之剝離強度。The invention discloses a metallization method of liquid crystal polymer. First, the liquid crystal polymer material is subjected to alkali treatment to clean and roughen the surface of the liquid crystal polymer material. Next, the liquid crystal polymer material is activated to provide metal ions attached to the surface of the liquid crystal polymer material using an activator, and the surface is modified. Next, the liquid crystal polymer material is subjected to reduction treatment, and the reduced metal ion is used as the metal catalyst. Finally, in accordance with the catalytic activity of the metal catalyst, a nickel layer or a nickel alloy layer is formed by electroless plating to form a copper electroplated layer on the nickel layer or nickel alloy layer. The present invention does not need to additionally use a physical method to treat the surface of the liquid crystal polymer material, but directly uses a wet process for the purpose of using nickel to improve the peel strength of the copper foil.

Description

液晶高分子之金屬化方法Liquid crystal polymer metallization method

本發明係關於一種金屬化方法,且特別關於一種液晶高分子之金屬化方法。The present invention relates to a metallization method, and particularly to a metallization method for liquid crystal polymers.

液晶高分子(LCP)材料,具有耐酸鹼與耐高溫之特性,與聚亞醯胺(PI)比較,則有較低的吸水性、介電常數與熱膨脹係數,因此液晶高分子薄膜成為主要高速傳輸用之軟板基材之一。傳統LCP軟板是以銅箔高溫壓合方式製作,壓合溫度接近LCP熔融溫度,對生產良率不易掌握。Liquid crystal polymer (LCP) material has the characteristics of acid and alkali resistance and high temperature resistance. Compared with polyimide (PI), it has lower water absorption, dielectric constant and thermal expansion coefficient, so the liquid crystal polymer film becomes the main One of the flexible board substrates for high-speed transmission. The traditional LCP soft board is made by high-temperature copper foil lamination, the lamination temperature is close to the LCP melting temperature, and it is difficult to grasp the production yield.

在台灣專利I607866中,揭露在液晶高分子基板上進行金屬化流程,其中液晶高分子材料需要經過多一道處理,即在表面形成含量0.01%以上C=O官能基,然後經過前處理、化鍍銅及電鍍銅流程完成金屬化,製程所需時間較長,成本較高。此外,高分子與金屬介面藉由高溫環境產生的擴散作用增加兩者間的附著力,化鍍銅在高溫環境下容易氧化形成氧化銅層,隨氧化銅層厚度增加則附著力下降,容易有銅箔與基材分離情形,在線路製作流程中造成線路剝離或無法形成線路。在台灣專利I563886中,揭露以樹脂中添加觸發粒子作為絕緣材料,以雷射方式活化孔內觸發粒子,後續才可於孔內上鍍金屬層,因為需要添加觸發粒子,所以此製程同樣所需時間較長,成本較高。另一傳統方式為濺鍍法,先在基材上濺鍍一導電層後,再以電鍍方式製作銅箔。如第1圖所示,此濺鍍方式,可利用濺鍍靶材10在液晶高分子材料12形成導電層,然而在濺射原子多方向及多角度散射的影響下,在液晶高分子材料12之非水平表面下不易形成均勻且連續的導電層,在微小盲孔14或通孔甚至形成封孔情形。由於液晶高分子材料主要用於軟性電路板製作,盲孔或通孔為線路製作之必要結構,主要功能在於雙面或雙層電路之導通,封孔造成孔內導電層不均勻或無法導電,後續電鍍銅將無法上鍍。In Taiwan Patent I607866, it is disclosed that the metallization process is carried out on a liquid crystal polymer substrate, in which the liquid crystal polymer material needs to undergo an additional treatment, that is, a C=O functional group with a content of 0.01% or more is formed on the surface, and then undergoes pretreatment and chemical plating The copper and electroplated copper processes are metallized, which requires a longer process and higher cost. In addition, the diffusion between the polymer and the metal interface increases the adhesion between the two through the high temperature environment. The electroless copper plating is easily oxidized to form a copper oxide layer under a high temperature environment. As the thickness of the copper oxide layer increases, the adhesion decreases. The separation of the copper foil and the substrate causes the circuit to peel off or fail to form a circuit during the circuit manufacturing process. In Taiwan Patent I563886, it is disclosed that the trigger particles are added to the resin as an insulating material, and the trigger particles in the hole are activated by laser, and then the metal layer can be plated on the hole, because the trigger particles need to be added, so this process is also required Longer time and higher cost. Another traditional method is sputtering, in which a conductive layer is first sputtered on the substrate, and then copper foil is produced by electroplating. As shown in FIG. 1, this sputtering method can use the sputtering target 10 to form a conductive layer on the liquid crystal polymer material 12, but under the influence of multi-directional and multi-angle scattering of sputtering atoms, the liquid crystal polymer material 12 It is not easy to form a uniform and continuous conductive layer under the non-horizontal surface, even in the case of tiny blind holes 14 or through holes or even sealing holes. Since the liquid crystal polymer material is mainly used for the production of flexible circuit boards, blind holes or through holes are necessary structures for circuit manufacturing. The main function is to conduct double-sided or double-layer circuits. The hole sealing causes the conductive layer in the hole to be uneven or unable to conduct electricity. Subsequent electroplated copper will not be plated.

因此,本發明係在針對上述的困擾,提出一種液晶高分子之金屬化方法,以解決習知所產生的問題。Therefore, in order to solve the above-mentioned problems, the present invention proposes a metallization method of liquid crystal polymer to solve the problems caused by the prior art.

本發明的主要目的,在於提供一種液晶高分子之金屬化方法,其係不需額外使用物理方式處理液晶高分子材料之表面,而直接以濕製程進行處理,以利用具有優秀抗氧化性之化鍍鎳提升銅箔之剝離強度,提供電鍍銅形成所需之厚度,同時縮短製程並降低成本。此外,濕製程的等向特性,可同時在盲孔或通孔等非水平表面形成均勻之導電層。The main object of the present invention is to provide a metallization method for liquid crystal polymer, which does not require additional physical treatment of the surface of the liquid crystal polymer material, but directly uses a wet process for treatment, in order to use the chemical with excellent oxidation resistance Nickel plating enhances the peel strength of copper foil, provides the thickness required for the formation of electroplated copper, and shortens the manufacturing process and reduces costs. In addition, the isotropic characteristics of the wet process can simultaneously form a uniform conductive layer on non-horizontal surfaces such as blind holes or through holes.

為達上述目的,本發明提供一種液晶高分子之金屬化方法,首先,對液晶高分子材料進行鹼處理,以清潔與粗化液晶高分子材料之表面。接著,對液晶高分子材料進行活化處理,以利用一活化劑提供金屬離子附著於液晶高分子材料之表面,並對此表面進行改質。再來,對液晶高分子材料進行還原處理,以還原金屬離子為金屬觸媒。最後,配合金屬觸媒之催化活性,以化鍍法形成一鎳層或一鎳合金層,以供一電鍍銅層形成於鎳層或鎳合金層上。In order to achieve the above object, the present invention provides a method for metallizing a liquid crystal polymer. First, an alkali treatment is performed on the liquid crystal polymer material to clean and roughen the surface of the liquid crystal polymer material. Next, the liquid crystal polymer material is activated to provide metal ions attached to the surface of the liquid crystal polymer material using an activator, and the surface is modified. Next, the liquid crystal polymer material is subjected to reduction treatment, and the reduced metal ion is used as the metal catalyst. Finally, in accordance with the catalytic activity of the metal catalyst, a nickel layer or a nickel alloy layer is formed by electroless plating to form a copper electroplated layer on the nickel layer or nickel alloy layer.

在本發明之一實施例中,鹼處理為將液晶高分子材料浸泡於濃度為50~500克/升(g/L)之一鹼處理劑中1~30分鐘,且鹼處理劑之溫度為攝氏40~80度。In one embodiment of the present invention, the alkali treatment is to immerse the liquid crystal polymer material in an alkali treatment agent with a concentration of 50 to 500 grams/liter (g/L) for 1 to 30 minutes, and the temperature of the alkali treatment agent is 40 to 80 degrees Celsius.

在本發明之一實施例中,鹼處理劑包含氫氧化鉀、氫氧化鈉、氫氧化鋰與氫氧化鈣之至少其中之一者。In one embodiment of the present invention, the alkali treatment agent includes at least one of potassium hydroxide, sodium hydroxide, lithium hydroxide, and calcium hydroxide.

在本發明之一實施例中,活化處理為將液晶高分子材料浸泡於活化劑中1~10分鐘,且活化劑之溫度為攝氏20~70度,活化劑之濃度為0.01~5克/升(g/L)。In one embodiment of the present invention, the activation process is to immerse the liquid crystal polymer material in the activator for 1 to 10 minutes, and the temperature of the activator is 20 to 70 degrees Celsius, and the concentration of the activator is 0.01 to 5 grams/liter. (g/L).

在本發明之一實施例中,金屬離子為鈀離子,活化劑包含氯化鈀、二氯二氨鈀、二氯四氨鈀、硫酸鈀或二氨亞硝酸鈀。In one embodiment of the present invention, the metal ion is palladium ion, and the activator includes palladium chloride, dichlorodiammonium palladium, dichlorotetraammine palladium, palladium sulfate, or diammine palladium nitrite.

在本發明之一實施例中,還原處理為將液晶高分子材料浸泡於濃度為2~100克/升(g/L)之一還原劑中1~10分鐘,且還原劑之溫度為攝氏20~70度。In one embodiment of the present invention, the reduction process is to immerse the liquid crystal polymer material in a reducing agent with a concentration of 2 to 100 grams/liter (g/L) for 1 to 10 minutes, and the temperature of the reducing agent is 20 degrees Celsius ~70 degrees.

在本發明之一實施例中,還原劑包含次亞磷酸鈉、次磷酸二氫鈉、甲醛、硼氫化鈉、二甲胺硼烷、聯氨、葡萄糖與抗壞血酸之至少其中之一者。In one embodiment of the present invention, the reducing agent comprises at least one of sodium hypophosphite, sodium dihydrogen hypophosphite, formaldehyde, sodium borohydride, dimethylamine borane, hydrazine, glucose, and ascorbic acid.

在本發明之一實施例中,化鍍法為將液晶高分子材料浸泡於一化鍍液中1~5分鐘,且化鍍液之溫度為攝氏30~70度。In one embodiment of the present invention, the chemical plating method is to immerse the liquid crystal polymer material in a chemical plating solution for 1 to 5 minutes, and the temperature of the chemical plating solution is 30 to 70 degrees Celsius.

在本發明之一實施例中,化鍍液包含0.5~5重量百分比之水溶性鎳鹽、1~10重量百分比之蟄合劑、0.5~5重量百分比之還原劑、0.00001~0.01重量百分比之安定劑、0.005~0.1重量百分比之添加劑、3~10重量百分比之酸鹼調整劑與其餘重量百分比之水。In one embodiment of the present invention, the chemical plating solution contains 0.5 to 5 weight percent of water-soluble nickel salt, 1 to 10 weight percent of sting agent, 0.5 to 5 weight percent of reducing agent, and 0.00001 to 0.01 weight percent of stabilizer. , 0.005 to 0.1 weight percent additives, 3 to 10 weight percent acid-base regulator and the remaining weight percent water.

在本發明之一實施例中,在形成鎳層或鎳合金層之步驟後,對鎳層或鎳合金層進行烘烤處理,以供電鍍銅層形成於鎳層或鎳合金層上。In one embodiment of the present invention, after the step of forming the nickel layer or nickel alloy layer, the nickel layer or nickel alloy layer is baked to form a copper plating layer for power supply on the nickel layer or nickel alloy layer.

茲為使 貴審查委員對本發明的結構特徵及所達成的功效更有進一步的瞭解與認識,謹佐以較佳的實施例圖及配合詳細的說明,說明如後:In order to make your reviewer have a better understanding and understanding of the structural features and achieved effects of the present invention, I would like to use the preferred embodiment drawings and detailed descriptions, the explanations are as follows:

本發明之實施例將藉由下文配合相關圖式進一步加以解說。盡可能的,於圖式與說明書中,相同標號係代表相同或相似構件。於圖式中,基於簡化與方便標示,形狀與厚度可能經過誇大表示。可以理解的是,未特別顯示於圖式中或描述於說明書中之元件,為所屬技術領域中具有通常技術者所知之形態。本領域之通常技術者可依據本發明之內容而進行多種之改變與修改。The embodiments of the present invention will be further explained in the following with the related drawings. As much as possible, in the drawings and the description, the same reference numerals represent the same or similar components. In the drawings, the shape and thickness may be exaggerated for simplicity and convenience. It can be understood that the elements that are not specifically shown in the drawings or described in the specification have a form known to those skilled in the art. Those of ordinary skill in the art can make various changes and modifications according to the content of the present invention.

以下請參閱第2圖與第3圖,以介紹本發明之液晶高分子之金屬化方法, 首先,如步驟S10所示,對液晶高分子材料16進行鹼處理,以清潔與粗化液晶高分子材料16之表面,進而增加觸媒的吸附量與金屬間的附著力。具體而言,鹼處理為將液晶高分子材料16浸泡於濃度為50~500克/升(g/L)之一鹼處理劑中1~30分鐘,且鹼處理劑之溫度為攝氏40~80度。鹼處理劑包含氫氧化鉀、氫氧化鈉、氫氧化鋰與氫氧化鈣之至少其中之一者。接著,如步驟S12所示,對液晶高分子材料16進行活化處理,以利用一活化劑提供金屬離子附著於液晶高分子材料16之表面,並對此液晶高分子材料16之表面進行改質。具體而言,活化處理為將液晶高分子材料16浸泡於活化劑中1~10分鐘,且活化劑之溫度為攝氏20~70度,活化劑之濃度為0.01~5克/升(g/L)。金屬離子為鈀離子,活化劑包含氯化鈀、二氯二氨鈀、二氯四氨鈀、硫酸鈀或二氨亞硝酸鈀。再來,如步驟S14所示,對液晶高分子材料16進行還原處理,以還原金屬離子為金屬觸媒,即鈀金屬。具體而言,還原處理為將液晶高分子材料16浸泡於濃度為2~100克/升(g/L)之一還原劑中1~10分鐘,且還原劑之溫度為攝氏20~70度。還原劑包含次亞磷酸鈉、次磷酸二氫鈉、甲醛、硼氫化鈉、二甲胺硼烷、聯氨、葡萄糖與抗壞血酸之至少其中之一者。步驟S14後,進行步驟S16。Please refer to FIG. 2 and FIG. 3 below to introduce the metallization method of the liquid crystal polymer of the present invention. First, as shown in step S10, the liquid crystal polymer material 16 is subjected to alkali treatment to clean and roughen the liquid crystal polymer The surface of the material 16 further increases the adsorption capacity of the catalyst and the adhesion between metals. Specifically, the alkali treatment is to immerse the liquid crystal polymer material 16 in an alkali treatment agent with a concentration of 50 to 500 grams/liter (g/L) for 1 to 30 minutes, and the temperature of the alkali treatment agent is 40 to 80 degrees Celsius degree. The alkali treatment agent includes at least one of potassium hydroxide, sodium hydroxide, lithium hydroxide, and calcium hydroxide. Next, as shown in step S12, the liquid crystal polymer material 16 is activated to provide metal ions attached to the surface of the liquid crystal polymer material 16 using an activating agent, and the surface of the liquid crystal polymer material 16 is modified. Specifically, the activation process is to immerse the liquid crystal polymer material 16 in the activator for 1 to 10 minutes, and the temperature of the activator is 20 to 70 degrees Celsius, and the concentration of the activator is 0.01 to 5 grams per liter (g/L ). The metal ion is palladium ion, and the activator includes palladium chloride, dichlorodiammonium palladium, dichlorotetraammine palladium, palladium sulfate, or diammine palladium nitrite. Next, as shown in step S14, the liquid crystal polymer material 16 is subjected to a reduction process to use reduced metal ions as a metal catalyst, that is, palladium metal. Specifically, the reduction process is to immerse the liquid crystal polymer material 16 in a reducing agent with a concentration of 2 to 100 grams/liter (g/L) for 1 to 10 minutes, and the temperature of the reducing agent is 20 to 70 degrees Celsius. The reducing agent includes at least one of sodium hypophosphite, sodium dihydrogen hypophosphite, formaldehyde, sodium borohydride, dimethylamine borane, hydrazine, glucose, and ascorbic acid. After step S14, step S16 is performed.

在步驟S16中,配合金屬觸媒之催化活性,以化鍍法形成一鎳層18或一鎳合金層。在此實施例中,係以鎳層18為例。具體而言,化鍍法為將液晶高分子材料16浸泡於一化鍍液中1~5分鐘,且化鍍液之溫度為攝氏30~70度。化鍍液包含0.5~5重量百分比之水溶性鎳鹽、1~10重量百分比之蟄合劑、0.5~5重量百分比之還原劑、0.00001~0.01重量百分比之安定劑、0.005~0.1重量百分比之添加劑、3~10重量百分比之酸鹼調整劑與其餘重量百分比之水,所有成分比例的總和必須為100重量百分比。水溶性鎳鹽之濃度為5~50克/升(g/L),水溶性鎳鹽包含硫酸鎳、氯化鎳與次磷酸鎳。蟄合劑之濃度為10~100g/L,蟄合劑包含蘋果酸、琥珀酸、己二酸、乳酸、草酸、葡萄糖酸、檸檬酸等羧酸及其鹽類、甘胺酸、丙胺酸、亞胺基二乙酸、精胺酸與穀胺酸等胺基酸。還原劑之濃度為5~50g/L,還原劑包含次磷酸及其鹽類、硼化合物與胺硼烷化合物,其中次磷酸之鹽類包含次磷酸鈉或次磷酸鉀,硼化合物包括硼氫化鈉或硼氫化鉀等之硼氫化合物,胺硼烷化合物包括二甲胺硼烷(DMAB)、三甲胺硼烷或三乙胺硼烷。安定劑之濃度為0.0001~0.1g/L,安定劑包含可溶性鉛鹽或硫化合物,可溶性鉛鹽例如乙酸鉛,硫化合物例如硫脲或硫代乙醇酸。添加劑之濃度為0.05~1g/L,添加劑包含通常使用之潤濕劑或光澤劑。化鍍液之pH值以6~10為佳,酸鹼調整劑包含氨水、氫氧化鈉、氫氧化鉀、硫酸與鹽酸。最後,如步驟S18所示,對鎳層18或鎳合金層進行烘烤處理,以供一電鍍銅層20形成於鎳層18或鎳合金層上。具體而言,烘烤溫度200℃~300℃,時間為10~60分鐘。經由烘烤處理,鎳層18以擴散方式與液晶高分子材料16聚合形成較強的鍵結,進而提升附著力。隨著烘烤溫度提升或時間的增加,得到較高的剝離強度。本案不需額外使用物理方式處理液晶高分子材料16之表面,例如形成官能基或添加觸發粒子,而直接以濕製程之化鍍法進行處理,以利用具有優秀抗氧化性之化鍍鎳提升銅箔之剝離強度,提供電鍍銅形成所需之厚度,同時縮短製程並降低成本。此外,濕製程的等向特性,若將液晶高分子材料16作用軟性電路板之材質時,可同時在軟性電路板之盲孔或通孔等非水平表面形成均勻之導電層,與濺鍍法不易形成均勻之導電層有所不同。In step S16, in accordance with the catalytic activity of the metal catalyst, a nickel layer 18 or a nickel alloy layer is formed by electroless plating. In this embodiment, the nickel layer 18 is taken as an example. Specifically, the chemical plating method is to immerse the liquid crystal polymer material 16 in a chemical plating solution for 1 to 5 minutes, and the temperature of the chemical plating solution is 30 to 70 degrees Celsius. The chemical plating solution contains 0.5 to 5 weight percent of water-soluble nickel salt, 1 to 10 weight percent of sting mixture, 0.5 to 5 weight percent of reducing agent, 0.00001 to 0.01 weight percent of stabilizer, 0.005 to 0.1 weight percent of additives, 3 to 10 weight percent of the acid-base regulator and the rest of the weight percent of water, the sum of all component ratios must be 100 weight percent. The concentration of the water-soluble nickel salt is 5 to 50 grams per liter (g/L). The water-soluble nickel salt includes nickel sulfate, nickel chloride and nickel hypophosphite. The concentration of the mixture is 10~100g/L. The mixture contains malic acid, succinic acid, adipic acid, lactic acid, oxalic acid, gluconic acid, citric acid and other carboxylic acids and their salts, glycine, alanine, imine Amino acids such as diacetic acid, arginine and glutamic acid. The concentration of the reducing agent is 5~50g/L. The reducing agent includes hypophosphorous acid and its salts, boron compounds and amine borane compounds. The hypophosphorous acid salts include sodium hypophosphite or potassium hypophosphite. The boron compound includes sodium borohydride Or boron hydride compounds such as potassium borohydride, amine borane compounds include dimethylamine borane (DMAB), trimethylamine borane or triethylamine borane. The concentration of the stabilizer is 0.0001~0.1g/L. The stabilizer contains soluble lead salts or sulfur compounds. Soluble lead salts such as lead acetate and sulfur compounds such as thiourea or thioglycolic acid. The concentration of the additive is 0.05~1g/L. The additive contains the commonly used wetting agent or gloss agent. The pH value of the chemical plating solution is preferably 6-10, and the acid-base adjusting agent includes ammonia water, sodium hydroxide, potassium hydroxide, sulfuric acid and hydrochloric acid. Finally, as shown in step S18, the nickel layer 18 or nickel alloy layer is baked to form a copper plating layer 20 formed on the nickel layer 18 or nickel alloy layer. Specifically, the baking temperature is 200°C to 300°C, and the time is 10 to 60 minutes. Through the baking process, the nickel layer 18 polymerizes with the liquid crystal polymer material 16 in a diffusion manner to form a strong bond, thereby improving adhesion. As the baking temperature increases or the time increases, a higher peel strength is obtained. In this case, the surface of the liquid crystal polymer material 16 does not need to be physically treated, such as forming functional groups or adding trigger particles, and is directly processed by the chemical plating method of the wet process, to use chemical nickel plating with excellent oxidation resistance to promote copper The peel strength of the foil provides the thickness required for the formation of electroplated copper, while shortening the manufacturing process and reducing costs. In addition, the isotropic characteristics of the wet process, if the liquid crystal polymer material 16 is used as the material of the flexible circuit board, a uniform conductive layer can be formed on the non-horizontal surface of the blind hole or through hole of the flexible circuit board at the same time, and the sputtering method It is not easy to form a uniform conductive layer.

上述步驟S18之烘烤處理亦可省略,使在步驟S16中,鎳層18或鎳合金層形成後,直接供電鍍銅層20形成於鎳層18或鎳合金層上,同樣不需額外使用物理方式處理液晶高分子材料之表面,而直接以濕製程進行處理,以利用具有優秀抗氧化性之化鍍鎳提升銅箔之剝離強度,提供電鍍銅形成所需之厚度,同時縮短製程並降低成本。The baking process in the above step S18 can also be omitted, so that in step S16, after the nickel layer 18 or the nickel alloy layer is formed, the direct power supply copper plating layer 20 is formed on the nickel layer 18 or the nickel alloy layer, and no additional physical use is required The surface of the liquid crystal polymer material is processed by a wet process, and the peel strength of the copper foil is improved by chemical nickel plating with excellent oxidation resistance to provide the thickness required for the formation of copper plating, while shortening the process and reducing costs .

以液晶高分子薄膜進行實驗,經過以溫度80℃,時間5分鐘進行鹼處理、以活化劑、溫度50℃與時間3分鐘進行活化處理,以還原劑、溫度25℃與時間3分鐘進行還原處理,接著進行以溫度45℃,時間3分鐘進行化學鍍鎳及電鍍銅處理,電鍍銅之厚度為18微米(μm)。經烘乾後,進行烘烤製程。以10公釐(mm)寬的銅面進行測試,剝離強度可以達到951克/平方公分(g/cm 2)。依IPC TM-650 測試方法進行漂錫6次處理後,剝離強度可以達到894g/cm 2The experiment was conducted with a liquid crystal polymer film, after alkaline treatment at a temperature of 80°C for 5 minutes, activation treatment at an activation agent, temperature of 50°C and time of 3 minutes, and reduction treatment at a reducing agent, temperature of 25°C and time of 3 minutes Then, electroless nickel plating and copper electroplating were carried out at a temperature of 45°C for 3 minutes. The thickness of the electroplated copper was 18 microns (μm). After drying, the baking process is carried out. Tested on a 10 mm wide copper surface, the peel strength can reach 951 grams per square centimeter (g/cm 2 ). After 6 times of bleaching tin treatment according to the IPC TM-650 test method, the peel strength can reach 894g/cm 2 .

以含孔徑100μm之盲孔之液晶高分子銅箔基板進行實驗,經過以溫度80℃,時間5分鐘進行鹼處理,以活化劑、溫度50℃與時間3分鐘進行活化處理,以還原劑、溫度25℃與時間3分鐘進行還原處理,接著以溫度45℃,時間3分鐘進行化學鍍鎳及電鍍銅處理,電鍍銅之厚度為厚度6μm。烘乾後,觀察孔內及孔壁可完全上鍍,形成連續之導電層。The experiment was carried out on a liquid crystal polymer copper foil substrate with blind holes with a pore diameter of 100 μm. After an alkali treatment at a temperature of 80° C. for 5 minutes, an activation treatment at an activation agent, a temperature of 50° C. and a time of 3 minutes, a reducing agent and a temperature The reduction treatment was carried out at 25°C for 3 minutes, followed by electroless nickel plating and copper electroplating at a temperature of 45°C for 3 minutes. The thickness of the electroplated copper was 6 μm. After drying, the observation hole and the hole wall can be completely plated to form a continuous conductive layer.

綜上所述,本發明能提升銅箔之剝離強度,提供電鍍銅形成所需之厚度,同時縮短製程並降低成本。In summary, the present invention can improve the peel strength of copper foil, provide the thickness required for the formation of electroplated copper, and shorten the manufacturing process and reduce the cost.

以上所述者,僅為本發明一較佳實施例而已,並非用來限定本發明實施之範圍,故舉凡依本發明申請專利範圍所述之形狀、構造、特徵及精神所為之均等變化與修飾,均應包括於本發明之申請專利範圍內。The above is only a preferred embodiment of the present invention and is not intended to limit the scope of the implementation of the present invention. Therefore, all changes and modifications based on the shape, structure, features and spirit described in the patent application scope of the present invention are cited. , Should be included in the scope of the patent application of the present invention.

10:濺鍍靶材 12:液晶高分子材料 14:盲孔 16:液晶高分子材料 18:鎳層 20:電鍍銅層 10: Sputtering target 12: Liquid crystal polymer material 14: Blind hole 16: Liquid crystal polymer material 18: nickel layer 20: Electroplated copper layer

第1圖為先前技術之濺鍍靶材在液晶高分子材料之非水平表面形成導電層之示意圖。 第2圖為本發明之液晶高分子之金屬化方法之流程圖。 第3圖為本發明之液晶高分子材料、鎳鍍層與電鍍銅層之結構剖視圖。 FIG. 1 is a schematic diagram of a conductive layer formed on a non-horizontal surface of a liquid crystal polymer material by a sputtering target of the prior art. Figure 2 is a flow chart of the metallization method of the liquid crystal polymer of the present invention. FIG. 3 is a cross-sectional view of the structure of the liquid crystal polymer material, nickel plating layer and electroplated copper layer of the present invention.

Claims (9)

一種液晶高分子之金屬化方法,包含:對液晶高分子材料進行鹼處理,以清潔與粗化該液晶高分子材料之表面;對該液晶高分子材料進行活化處理,以利用一活化劑提供金屬離子附著於該液晶高分子材料之該表面,並對該表面進行改質;對該液晶高分子材料進行還原處理,以還原該金屬離子為金屬觸媒;以及配合該金屬觸媒之催化活性,以化鍍法形成一鎳層或一鎳合金層,並對該鎳層或該鎳合金層以烘烤溫度200℃~300℃進行烘烤處理,以供一電鍍銅層形成於該鎳層或該鎳合金層上。 A metallization method of liquid crystal polymer, comprising: performing alkaline treatment on liquid crystal polymer material to clean and roughen the surface of the liquid crystal polymer material; performing activation treatment on the liquid crystal polymer material to provide metal with an activator Ions attach to the surface of the liquid crystal polymer material and modify the surface; perform reduction treatment on the liquid crystal polymer material to reduce the metal ion as a metal catalyst; and cooperate with the catalytic activity of the metal catalyst, Forming a nickel layer or a nickel alloy layer by electroless plating, and baking the nickel layer or the nickel alloy layer at a baking temperature of 200° C. to 300° C. to form an electroplated copper layer on the nickel layer or On the nickel alloy layer. 如請求項1所述之液晶高分子之金屬化方法,其中該鹼處理為將該液晶高分子材料浸泡於濃度為50~500克/升(g/L)之一鹼處理劑中1~30分鐘,且該鹼處理劑之溫度為攝氏40~80度。 The metallization method of liquid crystal polymer according to claim 1, wherein the alkali treatment is to immerse the liquid crystal polymer material in an alkali treatment agent with a concentration of 50 to 500 g/L (g/L) 1 to 30 Minutes, and the temperature of the alkali treatment agent is 40 to 80 degrees Celsius. 如請求項2所述之液晶高分子之金屬化方法,其中該鹼處理劑包含氫氧化鉀、氫氧化鈉、氫氧化鋰與氫氧化鈣之至少其中之一者。 The method for metallizing a liquid crystal polymer according to claim 2, wherein the alkali treatment agent comprises at least one of potassium hydroxide, sodium hydroxide, lithium hydroxide and calcium hydroxide. 如請求項1所述之液晶高分子之金屬化方法,其中該活化處理為將該液晶高分子材料浸泡於該活化劑中1~10分鐘,且該活化劑之溫度為攝氏20~70度,該活化劑之濃度為0.01~5克/升(g/L)。 The metallization method of liquid crystal polymer according to claim 1, wherein the activation treatment is to immerse the liquid crystal polymer material in the activator for 1-10 minutes, and the temperature of the activator is 20-70 degrees Celsius, The concentration of the activator is 0.01-5 grams per liter (g/L). 如請求項4所述之液晶高分子之金屬化方法,其中該金屬離子為鈀離子,該活化劑包含氯化鈀、二氯二氨鈀、二氯四氨鈀、硫酸鈀或二氨亞硝酸鈀。 The method for metallizing a liquid crystal polymer according to claim 4, wherein the metal ion is palladium ion, and the activator comprises palladium chloride, dichlorodiammonium palladium, dichlorotetraammine palladium, palladium sulfate or diammonium nitrite palladium. 如請求項1所述之液晶高分子之金屬化方法,其中該還原處理為將該液晶高分子材料浸泡於濃度為2~100克/升(g/L)之一還原劑中1~ 10分鐘,且該還原劑之溫度為攝氏20~70度。 The metallization method of liquid crystal polymer according to claim 1, wherein the reduction treatment is to immerse the liquid crystal polymer material in a reducing agent with a concentration of 2~100 g/L (g/L) 1~ 10 minutes, and the temperature of the reducing agent is 20 to 70 degrees Celsius. 如請求項6所述之液晶高分子之金屬化方法,其中該還原劑包含次亞磷酸鈉、次磷酸二氫鈉、甲醛、硼氫化鈉、二甲胺硼烷、聯氨、葡萄糖與抗壞血酸之至少其中之一者。 The metallization method of liquid crystal polymer according to claim 6, wherein the reducing agent comprises sodium hypophosphite, sodium dihydrogen hypophosphite, formaldehyde, sodium borohydride, dimethylamine borane, hydrazine, glucose and ascorbic acid At least one of them. 如請求項1所述之液晶高分子之金屬化方法,其中該化鍍法為將該液晶高分子材料浸泡於一化鍍液中1~5分鐘,且該化鍍液之溫度為攝氏30~70度。 The metallization method of liquid crystal polymer according to claim 1, wherein the chemical plating method is to immerse the liquid crystal polymer material in a chemical plating solution for 1~5 minutes, and the temperature of the chemical plating solution is 30~C 70 degrees. 如請求項8所述之液晶高分子之金屬化方法,其中該化鍍液包含0.5~5重量百分比之水溶性鎳鹽、1~10重量百分比之墊合劑、0.5~5重量百分比之還原劑、0.00001~0.01重量百分比之安定劑、0.005~0.1重量百分比之添加劑、3~10重量百分比之酸鹼調整劑與其餘重量百分比之水。 The metallization method of liquid crystal polymer according to claim 8, wherein the plating solution contains 0.5 to 5 weight percent water-soluble nickel salt, 1 to 10 weight percent padding agent, 0.5 to 5 weight percent reducing agent, 0.00001~0.01% by weight of stabilizer, 0.005~0.1% by weight of additives, 3~10% by weight of acid-base regulator and the remaining weight of water.
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CN117821951A (en) * 2023-12-29 2024-04-05 万明电镀智能科技(东莞)有限公司 Application of novel alkaline ionic palladium in LCP material metallization pretreatment

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