TWI688674B - Liquid crystal polymer metallization method - Google Patents
Liquid crystal polymer metallization method Download PDFInfo
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- TWI688674B TWI688674B TW108104179A TW108104179A TWI688674B TW I688674 B TWI688674 B TW I688674B TW 108104179 A TW108104179 A TW 108104179A TW 108104179 A TW108104179 A TW 108104179A TW I688674 B TWI688674 B TW I688674B
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- liquid crystal
- crystal polymer
- polymer material
- nickel
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- 229920000106 Liquid crystal polymer Polymers 0.000 title claims abstract description 72
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 title claims abstract description 72
- 238000000034 method Methods 0.000 title claims abstract description 37
- 238000001465 metallisation Methods 0.000 title claims abstract description 16
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 50
- 239000000463 material Substances 0.000 claims abstract description 49
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 30
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 25
- 229910052802 copper Inorganic materials 0.000 claims abstract description 22
- 239000010949 copper Substances 0.000 claims abstract description 22
- 239000003513 alkali Substances 0.000 claims abstract description 17
- 229910000990 Ni alloy Inorganic materials 0.000 claims abstract description 15
- 239000012190 activator Substances 0.000 claims abstract description 15
- 229910052751 metal Inorganic materials 0.000 claims abstract description 13
- 239000002184 metal Substances 0.000 claims abstract description 13
- 229910021645 metal ion Inorganic materials 0.000 claims abstract description 10
- 239000003054 catalyst Substances 0.000 claims abstract description 9
- 230000003197 catalytic effect Effects 0.000 claims abstract description 4
- 238000007772 electroless plating Methods 0.000 claims abstract description 4
- 238000007747 plating Methods 0.000 claims description 26
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 22
- 239000000126 substance Substances 0.000 claims description 17
- 239000003638 chemical reducing agent Substances 0.000 claims description 16
- 239000003795 chemical substances by application Substances 0.000 claims description 16
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 12
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 12
- 229910052763 palladium Inorganic materials 0.000 claims description 11
- WMFOQBRAJBCJND-UHFFFAOYSA-M Lithium hydroxide Chemical compound [Li+].[OH-] WMFOQBRAJBCJND-UHFFFAOYSA-M 0.000 claims description 9
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 claims description 6
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims description 6
- 230000004913 activation Effects 0.000 claims description 6
- 239000000654 additive Substances 0.000 claims description 5
- RJTANRZEWTUVMA-UHFFFAOYSA-N boron;n-methylmethanamine Chemical compound [B].CNC RJTANRZEWTUVMA-UHFFFAOYSA-N 0.000 claims description 5
- 150000002815 nickel Chemical class 0.000 claims description 5
- 239000003381 stabilizer Substances 0.000 claims description 5
- KWSLGOVYXMQPPX-UHFFFAOYSA-N 5-[3-(trifluoromethyl)phenyl]-2h-tetrazole Chemical compound FC(F)(F)C1=CC=CC(C2=NNN=N2)=C1 KWSLGOVYXMQPPX-UHFFFAOYSA-N 0.000 claims description 4
- 239000002585 base Substances 0.000 claims description 4
- 239000012279 sodium borohydride Substances 0.000 claims description 4
- 229910000033 sodium borohydride Inorganic materials 0.000 claims description 4
- 229910001379 sodium hypophosphite Inorganic materials 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- WQZGKKKJIJFFOK-GASJEMHNSA-N Glucose Natural products OC[C@H]1OC(O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-GASJEMHNSA-N 0.000 claims description 3
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 claims description 3
- 235000010323 ascorbic acid Nutrition 0.000 claims description 3
- 229960005070 ascorbic acid Drugs 0.000 claims description 3
- 239000011668 ascorbic acid Substances 0.000 claims description 3
- WQZGKKKJIJFFOK-VFUOTHLCSA-N beta-D-glucose Chemical compound OC[C@H]1O[C@@H](O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-VFUOTHLCSA-N 0.000 claims description 3
- AXCZMVOFGPJBDE-UHFFFAOYSA-L calcium dihydroxide Chemical compound [OH-].[OH-].[Ca+2] AXCZMVOFGPJBDE-UHFFFAOYSA-L 0.000 claims description 3
- 239000000920 calcium hydroxide Substances 0.000 claims description 3
- 229910001861 calcium hydroxide Inorganic materials 0.000 claims description 3
- 239000008103 glucose Substances 0.000 claims description 3
- WSFSSNUMVMOOMR-NJFSPNSNSA-N methanone Chemical compound O=[14CH2] WSFSSNUMVMOOMR-NJFSPNSNSA-N 0.000 claims description 3
- XONPDZSGENTBNJ-UHFFFAOYSA-N molecular hydrogen;sodium Chemical compound [Na].[H][H] XONPDZSGENTBNJ-UHFFFAOYSA-N 0.000 claims description 3
- MUJIDPITZJWBSW-UHFFFAOYSA-N palladium(2+) Chemical compound [Pd+2] MUJIDPITZJWBSW-UHFFFAOYSA-N 0.000 claims description 3
- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 claims description 3
- ACVYVLVWPXVTIT-UHFFFAOYSA-M phosphinate Chemical compound [O-][PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-M 0.000 claims description 3
- FFTOPVWHPZEWOI-UHFFFAOYSA-N diazanium dinitrite Chemical compound [NH4+].[NH4+].[O-]N=O.[O-]N=O FFTOPVWHPZEWOI-UHFFFAOYSA-N 0.000 claims 1
- 150000002500 ions Chemical class 0.000 claims 1
- 239000011889 copper foil Substances 0.000 abstract description 8
- 238000000053 physical method Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000001994 activation Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 150000003839 salts Chemical class 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- -1 that is Substances 0.000 description 4
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000011946 reduction process Methods 0.000 description 3
- 238000005477 sputtering target Methods 0.000 description 3
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 2
- 239000005751 Copper oxide Substances 0.000 description 2
- RGHNJXZEOKUKBD-SQOUGZDYSA-N D-gluconic acid Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C(O)=O RGHNJXZEOKUKBD-SQOUGZDYSA-N 0.000 description 2
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 2
- 150000001639 boron compounds Chemical class 0.000 description 2
- 229910000431 copper oxide Inorganic materials 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- AEPKDRAICDFPEY-UHFFFAOYSA-L palladium(2+);dinitrite Chemical compound [Pd+2].[O-]N=O.[O-]N=O AEPKDRAICDFPEY-UHFFFAOYSA-L 0.000 description 2
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical compound O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 150000003464 sulfur compounds Chemical class 0.000 description 2
- CWERGRDVMFNCDR-UHFFFAOYSA-N thioglycolic acid Chemical compound OC(=O)CS CWERGRDVMFNCDR-UHFFFAOYSA-N 0.000 description 2
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 description 2
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 1
- XXSPKSHUSWQAIZ-UHFFFAOYSA-L 36026-88-7 Chemical compound [Ni+2].[O-]P=O.[O-]P=O XXSPKSHUSWQAIZ-UHFFFAOYSA-L 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 239000004475 Arginine Substances 0.000 description 1
- RGHNJXZEOKUKBD-UHFFFAOYSA-N D-gluconic acid Natural products OCC(O)C(O)C(O)C(O)C(O)=O RGHNJXZEOKUKBD-UHFFFAOYSA-N 0.000 description 1
- WHUUTDBJXJRKMK-UHFFFAOYSA-N Glutamic acid Natural products OC(=O)C(N)CCC(O)=O WHUUTDBJXJRKMK-UHFFFAOYSA-N 0.000 description 1
- 239000004471 Glycine Substances 0.000 description 1
- QNAYBMKLOCPYGJ-REOHCLBHSA-N L-alanine Chemical compound C[C@H](N)C(O)=O QNAYBMKLOCPYGJ-REOHCLBHSA-N 0.000 description 1
- ODKSFYDXXFIFQN-BYPYZUCNSA-P L-argininium(2+) Chemical compound NC(=[NH2+])NCCC[C@H]([NH3+])C(O)=O ODKSFYDXXFIFQN-BYPYZUCNSA-P 0.000 description 1
- WHUUTDBJXJRKMK-VKHMYHEASA-N L-glutamic acid Chemical compound OC(=O)[C@@H](N)CCC(O)=O WHUUTDBJXJRKMK-VKHMYHEASA-N 0.000 description 1
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- WDJHALXBUFZDSR-UHFFFAOYSA-N acetoacetic acid Chemical compound CC(=O)CC(O)=O WDJHALXBUFZDSR-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 239000001361 adipic acid Substances 0.000 description 1
- 235000011037 adipic acid Nutrition 0.000 description 1
- 235000004279 alanine Nutrition 0.000 description 1
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 1
- 235000001014 amino acid Nutrition 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- ODKSFYDXXFIFQN-UHFFFAOYSA-N arginine Natural products OC(=O)C(N)CCCNC(N)=N ODKSFYDXXFIFQN-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004061 bleaching Methods 0.000 description 1
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical class B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 1
- WVMHLYQJPRXKLC-UHFFFAOYSA-N borane;n,n-dimethylmethanamine Chemical compound B.CN(C)C WVMHLYQJPRXKLC-UHFFFAOYSA-N 0.000 description 1
- VEWFZHAHZPVQES-UHFFFAOYSA-N boron;n,n-diethylethanamine Chemical compound [B].CCN(CC)CC VEWFZHAHZPVQES-UHFFFAOYSA-N 0.000 description 1
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 235000015165 citric acid Nutrition 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000000174 gluconic acid Substances 0.000 description 1
- 235000012208 gluconic acid Nutrition 0.000 description 1
- 235000013922 glutamic acid Nutrition 0.000 description 1
- 239000004220 glutamic acid Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- 229940046892 lead acetate Drugs 0.000 description 1
- 239000001630 malic acid Substances 0.000 description 1
- 235000011090 malic acid Nutrition 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 1
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 1
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 229910001380 potassium hypophosphite Inorganic materials 0.000 description 1
- CRGPNLUFHHUKCM-UHFFFAOYSA-M potassium phosphinate Chemical compound [K+].[O-]P=O CRGPNLUFHHUKCM-UHFFFAOYSA-M 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 239000000080 wetting agent Substances 0.000 description 1
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Abstract
本發明係揭露一種液晶高分子之金屬化方法,首先,對液晶高分子材料進行鹼處理,以清潔與粗化液晶高分子材料之表面。接著,對液晶高分子材料進行活化處理,以利用一活化劑提供金屬離子附著於液晶高分子材料之表面,並對此表面進行改質。再來,對液晶高分子材料進行還原處理,以還原金屬離子為金屬觸媒。最後,配合金屬觸媒之催化活性,以化鍍法形成一鎳層或一鎳合金層,以供一電鍍銅層形成於鎳層或鎳合金層上。本發明不需額外使用物理方式處理液晶高分子材料之表面,而直接以濕製程進行處理,以利用鎳提升銅箔之剝離強度。The invention discloses a metallization method of liquid crystal polymer. First, the liquid crystal polymer material is subjected to alkali treatment to clean and roughen the surface of the liquid crystal polymer material. Next, the liquid crystal polymer material is activated to provide metal ions attached to the surface of the liquid crystal polymer material using an activator, and the surface is modified. Next, the liquid crystal polymer material is subjected to reduction treatment, and the reduced metal ion is used as the metal catalyst. Finally, in accordance with the catalytic activity of the metal catalyst, a nickel layer or a nickel alloy layer is formed by electroless plating to form a copper electroplated layer on the nickel layer or nickel alloy layer. The present invention does not need to additionally use a physical method to treat the surface of the liquid crystal polymer material, but directly uses a wet process for the purpose of using nickel to improve the peel strength of the copper foil.
Description
本發明係關於一種金屬化方法,且特別關於一種液晶高分子之金屬化方法。The present invention relates to a metallization method, and particularly to a metallization method for liquid crystal polymers.
液晶高分子(LCP)材料,具有耐酸鹼與耐高溫之特性,與聚亞醯胺(PI)比較,則有較低的吸水性、介電常數與熱膨脹係數,因此液晶高分子薄膜成為主要高速傳輸用之軟板基材之一。傳統LCP軟板是以銅箔高溫壓合方式製作,壓合溫度接近LCP熔融溫度,對生產良率不易掌握。Liquid crystal polymer (LCP) material has the characteristics of acid and alkali resistance and high temperature resistance. Compared with polyimide (PI), it has lower water absorption, dielectric constant and thermal expansion coefficient, so the liquid crystal polymer film becomes the main One of the flexible board substrates for high-speed transmission. The traditional LCP soft board is made by high-temperature copper foil lamination, the lamination temperature is close to the LCP melting temperature, and it is difficult to grasp the production yield.
在台灣專利I607866中,揭露在液晶高分子基板上進行金屬化流程,其中液晶高分子材料需要經過多一道處理,即在表面形成含量0.01%以上C=O官能基,然後經過前處理、化鍍銅及電鍍銅流程完成金屬化,製程所需時間較長,成本較高。此外,高分子與金屬介面藉由高溫環境產生的擴散作用增加兩者間的附著力,化鍍銅在高溫環境下容易氧化形成氧化銅層,隨氧化銅層厚度增加則附著力下降,容易有銅箔與基材分離情形,在線路製作流程中造成線路剝離或無法形成線路。在台灣專利I563886中,揭露以樹脂中添加觸發粒子作為絕緣材料,以雷射方式活化孔內觸發粒子,後續才可於孔內上鍍金屬層,因為需要添加觸發粒子,所以此製程同樣所需時間較長,成本較高。另一傳統方式為濺鍍法,先在基材上濺鍍一導電層後,再以電鍍方式製作銅箔。如第1圖所示,此濺鍍方式,可利用濺鍍靶材10在液晶高分子材料12形成導電層,然而在濺射原子多方向及多角度散射的影響下,在液晶高分子材料12之非水平表面下不易形成均勻且連續的導電層,在微小盲孔14或通孔甚至形成封孔情形。由於液晶高分子材料主要用於軟性電路板製作,盲孔或通孔為線路製作之必要結構,主要功能在於雙面或雙層電路之導通,封孔造成孔內導電層不均勻或無法導電,後續電鍍銅將無法上鍍。In Taiwan Patent I607866, it is disclosed that the metallization process is carried out on a liquid crystal polymer substrate, in which the liquid crystal polymer material needs to undergo an additional treatment, that is, a C=O functional group with a content of 0.01% or more is formed on the surface, and then undergoes pretreatment and chemical plating The copper and electroplated copper processes are metallized, which requires a longer process and higher cost. In addition, the diffusion between the polymer and the metal interface increases the adhesion between the two through the high temperature environment. The electroless copper plating is easily oxidized to form a copper oxide layer under a high temperature environment. As the thickness of the copper oxide layer increases, the adhesion decreases. The separation of the copper foil and the substrate causes the circuit to peel off or fail to form a circuit during the circuit manufacturing process. In Taiwan Patent I563886, it is disclosed that the trigger particles are added to the resin as an insulating material, and the trigger particles in the hole are activated by laser, and then the metal layer can be plated on the hole, because the trigger particles need to be added, so this process is also required Longer time and higher cost. Another traditional method is sputtering, in which a conductive layer is first sputtered on the substrate, and then copper foil is produced by electroplating. As shown in FIG. 1, this sputtering method can use the
因此,本發明係在針對上述的困擾,提出一種液晶高分子之金屬化方法,以解決習知所產生的問題。Therefore, in order to solve the above-mentioned problems, the present invention proposes a metallization method of liquid crystal polymer to solve the problems caused by the prior art.
本發明的主要目的,在於提供一種液晶高分子之金屬化方法,其係不需額外使用物理方式處理液晶高分子材料之表面,而直接以濕製程進行處理,以利用具有優秀抗氧化性之化鍍鎳提升銅箔之剝離強度,提供電鍍銅形成所需之厚度,同時縮短製程並降低成本。此外,濕製程的等向特性,可同時在盲孔或通孔等非水平表面形成均勻之導電層。The main object of the present invention is to provide a metallization method for liquid crystal polymer, which does not require additional physical treatment of the surface of the liquid crystal polymer material, but directly uses a wet process for treatment, in order to use the chemical with excellent oxidation resistance Nickel plating enhances the peel strength of copper foil, provides the thickness required for the formation of electroplated copper, and shortens the manufacturing process and reduces costs. In addition, the isotropic characteristics of the wet process can simultaneously form a uniform conductive layer on non-horizontal surfaces such as blind holes or through holes.
為達上述目的,本發明提供一種液晶高分子之金屬化方法,首先,對液晶高分子材料進行鹼處理,以清潔與粗化液晶高分子材料之表面。接著,對液晶高分子材料進行活化處理,以利用一活化劑提供金屬離子附著於液晶高分子材料之表面,並對此表面進行改質。再來,對液晶高分子材料進行還原處理,以還原金屬離子為金屬觸媒。最後,配合金屬觸媒之催化活性,以化鍍法形成一鎳層或一鎳合金層,以供一電鍍銅層形成於鎳層或鎳合金層上。In order to achieve the above object, the present invention provides a method for metallizing a liquid crystal polymer. First, an alkali treatment is performed on the liquid crystal polymer material to clean and roughen the surface of the liquid crystal polymer material. Next, the liquid crystal polymer material is activated to provide metal ions attached to the surface of the liquid crystal polymer material using an activator, and the surface is modified. Next, the liquid crystal polymer material is subjected to reduction treatment, and the reduced metal ion is used as the metal catalyst. Finally, in accordance with the catalytic activity of the metal catalyst, a nickel layer or a nickel alloy layer is formed by electroless plating to form a copper electroplated layer on the nickel layer or nickel alloy layer.
在本發明之一實施例中,鹼處理為將液晶高分子材料浸泡於濃度為50~500克/升(g/L)之一鹼處理劑中1~30分鐘,且鹼處理劑之溫度為攝氏40~80度。In one embodiment of the present invention, the alkali treatment is to immerse the liquid crystal polymer material in an alkali treatment agent with a concentration of 50 to 500 grams/liter (g/L) for 1 to 30 minutes, and the temperature of the alkali treatment agent is 40 to 80 degrees Celsius.
在本發明之一實施例中,鹼處理劑包含氫氧化鉀、氫氧化鈉、氫氧化鋰與氫氧化鈣之至少其中之一者。In one embodiment of the present invention, the alkali treatment agent includes at least one of potassium hydroxide, sodium hydroxide, lithium hydroxide, and calcium hydroxide.
在本發明之一實施例中,活化處理為將液晶高分子材料浸泡於活化劑中1~10分鐘,且活化劑之溫度為攝氏20~70度,活化劑之濃度為0.01~5克/升(g/L)。In one embodiment of the present invention, the activation process is to immerse the liquid crystal polymer material in the activator for 1 to 10 minutes, and the temperature of the activator is 20 to 70 degrees Celsius, and the concentration of the activator is 0.01 to 5 grams/liter. (g/L).
在本發明之一實施例中,金屬離子為鈀離子,活化劑包含氯化鈀、二氯二氨鈀、二氯四氨鈀、硫酸鈀或二氨亞硝酸鈀。In one embodiment of the present invention, the metal ion is palladium ion, and the activator includes palladium chloride, dichlorodiammonium palladium, dichlorotetraammine palladium, palladium sulfate, or diammine palladium nitrite.
在本發明之一實施例中,還原處理為將液晶高分子材料浸泡於濃度為2~100克/升(g/L)之一還原劑中1~10分鐘,且還原劑之溫度為攝氏20~70度。In one embodiment of the present invention, the reduction process is to immerse the liquid crystal polymer material in a reducing agent with a concentration of 2 to 100 grams/liter (g/L) for 1 to 10 minutes, and the temperature of the reducing agent is 20 degrees Celsius ~70 degrees.
在本發明之一實施例中,還原劑包含次亞磷酸鈉、次磷酸二氫鈉、甲醛、硼氫化鈉、二甲胺硼烷、聯氨、葡萄糖與抗壞血酸之至少其中之一者。In one embodiment of the present invention, the reducing agent comprises at least one of sodium hypophosphite, sodium dihydrogen hypophosphite, formaldehyde, sodium borohydride, dimethylamine borane, hydrazine, glucose, and ascorbic acid.
在本發明之一實施例中,化鍍法為將液晶高分子材料浸泡於一化鍍液中1~5分鐘,且化鍍液之溫度為攝氏30~70度。In one embodiment of the present invention, the chemical plating method is to immerse the liquid crystal polymer material in a chemical plating solution for 1 to 5 minutes, and the temperature of the chemical plating solution is 30 to 70 degrees Celsius.
在本發明之一實施例中,化鍍液包含0.5~5重量百分比之水溶性鎳鹽、1~10重量百分比之蟄合劑、0.5~5重量百分比之還原劑、0.00001~0.01重量百分比之安定劑、0.005~0.1重量百分比之添加劑、3~10重量百分比之酸鹼調整劑與其餘重量百分比之水。In one embodiment of the present invention, the chemical plating solution contains 0.5 to 5 weight percent of water-soluble nickel salt, 1 to 10 weight percent of sting agent, 0.5 to 5 weight percent of reducing agent, and 0.00001 to 0.01 weight percent of stabilizer. , 0.005 to 0.1 weight percent additives, 3 to 10 weight percent acid-base regulator and the remaining weight percent water.
在本發明之一實施例中,在形成鎳層或鎳合金層之步驟後,對鎳層或鎳合金層進行烘烤處理,以供電鍍銅層形成於鎳層或鎳合金層上。In one embodiment of the present invention, after the step of forming the nickel layer or nickel alloy layer, the nickel layer or nickel alloy layer is baked to form a copper plating layer for power supply on the nickel layer or nickel alloy layer.
茲為使 貴審查委員對本發明的結構特徵及所達成的功效更有進一步的瞭解與認識,謹佐以較佳的實施例圖及配合詳細的說明,說明如後:In order to make your reviewer have a better understanding and understanding of the structural features and achieved effects of the present invention, I would like to use the preferred embodiment drawings and detailed descriptions, the explanations are as follows:
本發明之實施例將藉由下文配合相關圖式進一步加以解說。盡可能的,於圖式與說明書中,相同標號係代表相同或相似構件。於圖式中,基於簡化與方便標示,形狀與厚度可能經過誇大表示。可以理解的是,未特別顯示於圖式中或描述於說明書中之元件,為所屬技術領域中具有通常技術者所知之形態。本領域之通常技術者可依據本發明之內容而進行多種之改變與修改。The embodiments of the present invention will be further explained in the following with the related drawings. As much as possible, in the drawings and the description, the same reference numerals represent the same or similar components. In the drawings, the shape and thickness may be exaggerated for simplicity and convenience. It can be understood that the elements that are not specifically shown in the drawings or described in the specification have a form known to those skilled in the art. Those of ordinary skill in the art can make various changes and modifications according to the content of the present invention.
以下請參閱第2圖與第3圖,以介紹本發明之液晶高分子之金屬化方法, 首先,如步驟S10所示,對液晶高分子材料16進行鹼處理,以清潔與粗化液晶高分子材料16之表面,進而增加觸媒的吸附量與金屬間的附著力。具體而言,鹼處理為將液晶高分子材料16浸泡於濃度為50~500克/升(g/L)之一鹼處理劑中1~30分鐘,且鹼處理劑之溫度為攝氏40~80度。鹼處理劑包含氫氧化鉀、氫氧化鈉、氫氧化鋰與氫氧化鈣之至少其中之一者。接著,如步驟S12所示,對液晶高分子材料16進行活化處理,以利用一活化劑提供金屬離子附著於液晶高分子材料16之表面,並對此液晶高分子材料16之表面進行改質。具體而言,活化處理為將液晶高分子材料16浸泡於活化劑中1~10分鐘,且活化劑之溫度為攝氏20~70度,活化劑之濃度為0.01~5克/升(g/L)。金屬離子為鈀離子,活化劑包含氯化鈀、二氯二氨鈀、二氯四氨鈀、硫酸鈀或二氨亞硝酸鈀。再來,如步驟S14所示,對液晶高分子材料16進行還原處理,以還原金屬離子為金屬觸媒,即鈀金屬。具體而言,還原處理為將液晶高分子材料16浸泡於濃度為2~100克/升(g/L)之一還原劑中1~10分鐘,且還原劑之溫度為攝氏20~70度。還原劑包含次亞磷酸鈉、次磷酸二氫鈉、甲醛、硼氫化鈉、二甲胺硼烷、聯氨、葡萄糖與抗壞血酸之至少其中之一者。步驟S14後,進行步驟S16。Please refer to FIG. 2 and FIG. 3 below to introduce the metallization method of the liquid crystal polymer of the present invention. First, as shown in step S10, the liquid
在步驟S16中,配合金屬觸媒之催化活性,以化鍍法形成一鎳層18或一鎳合金層。在此實施例中,係以鎳層18為例。具體而言,化鍍法為將液晶高分子材料16浸泡於一化鍍液中1~5分鐘,且化鍍液之溫度為攝氏30~70度。化鍍液包含0.5~5重量百分比之水溶性鎳鹽、1~10重量百分比之蟄合劑、0.5~5重量百分比之還原劑、0.00001~0.01重量百分比之安定劑、0.005~0.1重量百分比之添加劑、3~10重量百分比之酸鹼調整劑與其餘重量百分比之水,所有成分比例的總和必須為100重量百分比。水溶性鎳鹽之濃度為5~50克/升(g/L),水溶性鎳鹽包含硫酸鎳、氯化鎳與次磷酸鎳。蟄合劑之濃度為10~100g/L,蟄合劑包含蘋果酸、琥珀酸、己二酸、乳酸、草酸、葡萄糖酸、檸檬酸等羧酸及其鹽類、甘胺酸、丙胺酸、亞胺基二乙酸、精胺酸與穀胺酸等胺基酸。還原劑之濃度為5~50g/L,還原劑包含次磷酸及其鹽類、硼化合物與胺硼烷化合物,其中次磷酸之鹽類包含次磷酸鈉或次磷酸鉀,硼化合物包括硼氫化鈉或硼氫化鉀等之硼氫化合物,胺硼烷化合物包括二甲胺硼烷(DMAB)、三甲胺硼烷或三乙胺硼烷。安定劑之濃度為0.0001~0.1g/L,安定劑包含可溶性鉛鹽或硫化合物,可溶性鉛鹽例如乙酸鉛,硫化合物例如硫脲或硫代乙醇酸。添加劑之濃度為0.05~1g/L,添加劑包含通常使用之潤濕劑或光澤劑。化鍍液之pH值以6~10為佳,酸鹼調整劑包含氨水、氫氧化鈉、氫氧化鉀、硫酸與鹽酸。最後,如步驟S18所示,對鎳層18或鎳合金層進行烘烤處理,以供一電鍍銅層20形成於鎳層18或鎳合金層上。具體而言,烘烤溫度200℃~300℃,時間為10~60分鐘。經由烘烤處理,鎳層18以擴散方式與液晶高分子材料16聚合形成較強的鍵結,進而提升附著力。隨著烘烤溫度提升或時間的增加,得到較高的剝離強度。本案不需額外使用物理方式處理液晶高分子材料16之表面,例如形成官能基或添加觸發粒子,而直接以濕製程之化鍍法進行處理,以利用具有優秀抗氧化性之化鍍鎳提升銅箔之剝離強度,提供電鍍銅形成所需之厚度,同時縮短製程並降低成本。此外,濕製程的等向特性,若將液晶高分子材料16作用軟性電路板之材質時,可同時在軟性電路板之盲孔或通孔等非水平表面形成均勻之導電層,與濺鍍法不易形成均勻之導電層有所不同。In step S16, in accordance with the catalytic activity of the metal catalyst, a nickel layer 18 or a nickel alloy layer is formed by electroless plating. In this embodiment, the nickel layer 18 is taken as an example. Specifically, the chemical plating method is to immerse the liquid
上述步驟S18之烘烤處理亦可省略,使在步驟S16中,鎳層18或鎳合金層形成後,直接供電鍍銅層20形成於鎳層18或鎳合金層上,同樣不需額外使用物理方式處理液晶高分子材料之表面,而直接以濕製程進行處理,以利用具有優秀抗氧化性之化鍍鎳提升銅箔之剝離強度,提供電鍍銅形成所需之厚度,同時縮短製程並降低成本。The baking process in the above step S18 can also be omitted, so that in step S16, after the nickel layer 18 or the nickel alloy layer is formed, the direct power supply
以液晶高分子薄膜進行實驗,經過以溫度80℃,時間5分鐘進行鹼處理、以活化劑、溫度50℃與時間3分鐘進行活化處理,以還原劑、溫度25℃與時間3分鐘進行還原處理,接著進行以溫度45℃,時間3分鐘進行化學鍍鎳及電鍍銅處理,電鍍銅之厚度為18微米(μm)。經烘乾後,進行烘烤製程。以10公釐(mm)寬的銅面進行測試,剝離強度可以達到951克/平方公分(g/cm 2)。依IPC TM-650 測試方法進行漂錫6次處理後,剝離強度可以達到894g/cm 2。 The experiment was conducted with a liquid crystal polymer film, after alkaline treatment at a temperature of 80°C for 5 minutes, activation treatment at an activation agent, temperature of 50°C and time of 3 minutes, and reduction treatment at a reducing agent, temperature of 25°C and time of 3 minutes Then, electroless nickel plating and copper electroplating were carried out at a temperature of 45°C for 3 minutes. The thickness of the electroplated copper was 18 microns (μm). After drying, the baking process is carried out. Tested on a 10 mm wide copper surface, the peel strength can reach 951 grams per square centimeter (g/cm 2 ). After 6 times of bleaching tin treatment according to the IPC TM-650 test method, the peel strength can reach 894g/cm 2 .
以含孔徑100μm之盲孔之液晶高分子銅箔基板進行實驗,經過以溫度80℃,時間5分鐘進行鹼處理,以活化劑、溫度50℃與時間3分鐘進行活化處理,以還原劑、溫度25℃與時間3分鐘進行還原處理,接著以溫度45℃,時間3分鐘進行化學鍍鎳及電鍍銅處理,電鍍銅之厚度為厚度6μm。烘乾後,觀察孔內及孔壁可完全上鍍,形成連續之導電層。The experiment was carried out on a liquid crystal polymer copper foil substrate with blind holes with a pore diameter of 100 μm. After an alkali treatment at a temperature of 80° C. for 5 minutes, an activation treatment at an activation agent, a temperature of 50° C. and a time of 3 minutes, a reducing agent and a temperature The reduction treatment was carried out at 25°C for 3 minutes, followed by electroless nickel plating and copper electroplating at a temperature of 45°C for 3 minutes. The thickness of the electroplated copper was 6 μm. After drying, the observation hole and the hole wall can be completely plated to form a continuous conductive layer.
綜上所述,本發明能提升銅箔之剝離強度,提供電鍍銅形成所需之厚度,同時縮短製程並降低成本。In summary, the present invention can improve the peel strength of copper foil, provide the thickness required for the formation of electroplated copper, and shorten the manufacturing process and reduce the cost.
以上所述者,僅為本發明一較佳實施例而已,並非用來限定本發明實施之範圍,故舉凡依本發明申請專利範圍所述之形狀、構造、特徵及精神所為之均等變化與修飾,均應包括於本發明之申請專利範圍內。The above is only a preferred embodiment of the present invention and is not intended to limit the scope of the implementation of the present invention. Therefore, all changes and modifications based on the shape, structure, features and spirit described in the patent application scope of the present invention are cited. , Should be included in the scope of the patent application of the present invention.
10:濺鍍靶材 12:液晶高分子材料 14:盲孔 16:液晶高分子材料 18:鎳層 20:電鍍銅層 10: Sputtering target 12: Liquid crystal polymer material 14: Blind hole 16: Liquid crystal polymer material 18: nickel layer 20: Electroplated copper layer
第1圖為先前技術之濺鍍靶材在液晶高分子材料之非水平表面形成導電層之示意圖。 第2圖為本發明之液晶高分子之金屬化方法之流程圖。 第3圖為本發明之液晶高分子材料、鎳鍍層與電鍍銅層之結構剖視圖。 FIG. 1 is a schematic diagram of a conductive layer formed on a non-horizontal surface of a liquid crystal polymer material by a sputtering target of the prior art. Figure 2 is a flow chart of the metallization method of the liquid crystal polymer of the present invention. FIG. 3 is a cross-sectional view of the structure of the liquid crystal polymer material, nickel plating layer and electroplated copper layer of the present invention.
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