TWI686973B - Display apparatus and manufacturing method thereof - Google Patents

Abstract

A display apparatus and manufacturing method thereof are provided. The manufacturing method of display apparatus includes the following steps. An array substrate is provided. The array substrate includes a plurality of sub-pixel regions, each has a first and a second device regions. A first imprinting process is performed, to respectively place N first luminance devices at the first device regions in N sub-pixel regions via a first carrier. A second imprinting process is performed, to respectively place X first luminance devices at the second device regions in X sub-pixel regions via a second carrier. A third imprinting process is performed, to respectively place Y first luminance devices at the second device regions in Y sub-pixel regions via a third carrier. The X sub-pixel regions are not overlapped with the Y sub-pixel regions, and the N sub-pixel regions are partially overlapped with the X sub-pixel regions and the Y sub-pixel regions.

Description

Display device and manufacturing method thereof

The present invention relates to a display device and a manufacturing method thereof, and particularly to a light-emitting diode display device and a manufacturing method thereof.

The light-emitting diode has the advantages of high energy conversion efficiency, short reaction time and long service life. Therefore, in recent years, light-emitting diodes have become the main lighting source with both power saving and environmental protection features. Furthermore, due to the breakthrough in the size of the light-emitting diodes, a technology that directly places the light-emitting diodes in the pixel structure of the micro-LED display (micro LED display) gradually appeared on the market.

The method of transposing the light emitting diode from the wafer to the array substrate may include stamp imprinting or electrostatic imprinting. Generally speaking, multiple transposition steps are required to set the light-emitting diode in all pixels (sub-pixels). The current transposition process includes displacing the transposition area of each transposition step by an offset in the column direction or row direction from the transposition area of the previous transposition step. Based on the error caused by the transposition device/process, the current method is difficult to fix the above-mentioned offset. As a result, the display device may have a long strip-shaped color mura or luminance mura defect extending along the column direction and/or row direction.

The present invention provides a display device and a method for manufacturing the same, which can avoid the defects of long color/luminance unevenness extending in the column direction and/or row direction.

The method for manufacturing a display device according to an embodiment of the present invention includes the following steps: providing an array substrate, wherein the array substrate includes a plurality of sub-pixel regions, each pixel region includes a first device region and a second device region; and a first transposition process is performed , Placing the N first light-emitting elements in the first element area of the N sub-pixel areas of the array substrate through the first carrier; performing the second transposition process, and placing the X second light-emitting elements through the second carrier The second element regions respectively placed in the X sub-pixel regions of the array substrate; and performing the third transposition process, placing the Y second light-emitting elements in the Y sub-pixel regions of the array substrate by the third carrier, respectively In the second component area. The X sub-pixel areas do not overlap with the Y sub-pixel areas, and the N sub-pixel areas partially overlap with the X sub-pixel areas and the Y sub-pixel areas, respectively.

In some embodiments, the second carrier and the third carrier may have different shapes and/or areas.

In some embodiments, the shapes and areas of the second carrier and the third carrier may be the same as each other, but different numbers of second light-emitting elements may be carried respectively.

In some embodiments, the first carrier, the second carrier, and the third carrier may be polymer stamps or electrostatic chucks, respectively.

In some embodiments, the light emission spectrum of the first light emitting element and the second light emitting element may be substantially the same as each other.

In some embodiments, the method for manufacturing the display device described above may further include: performing a fourth transposition process, placing the Z second light-emitting elements in the Z sub-pixel regions of the array substrate through the fourth carrier Second component area. The X sub-pixel areas, Y sub-pixel areas and Z sub-pixel areas do not overlap, and the N sub-pixel areas and Z sub-pixel areas partially overlap.

In some embodiments, the light emission spectrum of the first light emitting element and the second light emitting element may be different from each other.

The display device of the embodiment of the present invention includes an array substrate, a plurality of first light-emitting elements, and a plurality of second light-emitting elements. The array substrate includes multiple sub-pixel regions. The sub-pixel areas are arranged in an array along the first direction and the second direction, and each pixel area includes a first element area and a second element area arranged in the first direction. The plurality of first light-emitting elements are respectively disposed in the first element area in the sub-pixel area. The plurality of second light-emitting elements are respectively disposed in the second element area in the sub-pixel area. In the sub-pixel areas arranged in the first direction, the adjacent first light-emitting element and the second light-emitting element in any one of the sub-pixel areas have a first offset in the second direction from each other. In addition, in the sub-pixel regions arranged in the first direction, the first offset has at least three values.

In some embodiments, in the sub-pixel regions arranged along the first direction, at least two sub-pixel regions may have the same first offset between the first light-emitting element and the second light-emitting element.

In some embodiments, the absolute value of the first offset may be greater than 0 um and less than or equal to 3 μm.

In some embodiments, in the sub-pixel regions arranged in the second direction, adjacent first light-emitting elements in any two adjacent sub-pixel regions may have a second offset in the first direction from each other , And the second offset in the sub-pixel regions arranged along the second direction may have more than three values.

In some embodiments, in the sub-pixel regions arranged along the second direction, at least two of the second offsets may be the same.

In some embodiments, the absolute value of the second offset may be greater than 0 μm and less than or equal to 3 μm.

In some embodiments, the first light emitting element and the second light emitting element may be light emitting diodes having substantially the same light emission spectrum.

In some embodiments, the first light-emitting element and the second light-emitting element may be light-emitting diodes having different light-emitting spectra.

In some embodiments, the length/width of the first light emitting element and the second light emitting element may be 5 μm to 30 μm.

Based on the above, compared with the transposition area of each transposition step being displaced by an offset in the column direction or row direction from the transposition area of the previous transposition step, a plurality of light emitting elements are placed on the array substrate In the embodiment of the present invention, the transposition area of the first transposition process partially overlaps the transposition area of the subsequent second transposition process to the third transposition process (or the second transposition process to the fourth transposition process) , And the transposition regions of the second transposition process to the third transposition process (or the second transposition process to the fourth transposition process) do not overlap each other. In other words, the transposed regions of the first transposed process to the third transposed process (or the first transposed process to the fourth transposed process) of the embodiments of the present invention are not sequentially displaced along the column direction or the row direction. In this way, in a plurality of sub-pixel regions arranged along the column direction or the row direction, the offset amount of the first light-emitting element and the second light-emitting element in the sub-pixel area in the column direction or row direction may have more than two types Or more than three values. Therefore, the display device of the embodiment of the present invention can eliminate the directionality of the defects of uneven chromaticity or uneven brightness in the display device under the limited and large chaotic offset change, which can avoid the occurrence of along the column Defects of unevenness in chromaticity or unevenness of long strips extending in the direction and/or row direction.

In order to make the above-mentioned features and advantages of the present invention more obvious and understandable, the embodiments are specifically described below in conjunction with the accompanying drawings for detailed description as follows.

FIG. 1 is a flowchart of a method of manufacturing a display device 10 according to some embodiments of the present invention. 2A and 2B are schematic top views of different stages in the transposition process of the manufacturing method of the display device 10 according to some embodiments of the present invention. The manufacturing method of the display device 10 of the embodiment of the present invention includes the following steps.

Please refer to FIGS. 1 and 2A to perform step S100 to provide an array substrate 100. The material of the array substrate 100 may include glass, quartz, organic polymers, opaque/reflective materials (such as conductive materials, metals, wafers, ceramics, or other applicable materials) or other applicable materials. If a conductive material or metal is used, an insulating layer may be covered on the array substrate 100 to avoid the problem of short circuit. The array substrate 100 includes a plurality of pixel areas P. The plurality of pixel regions P are arrayed along the first direction D1 and the second direction D2. Each pixel area P includes a plurality of sub-pixel areas SP (for example, three sub-pixel areas SP). In some embodiments, the plurality of sub-pixel areas SP within each pixel area P may be arranged along the second direction D2. However, those skilled in the art can adjust the number and arrangement of the sub-pixel areas SP in each pixel area P according to design requirements, and the invention is not limited thereto. Each pixel region SP includes a first element region DR1 and a second element region DR2. In some embodiments, the first element region DR1 and the second element region DR2 in each pixel region SP may be arranged along the first direction D1. In the subsequent steps, one or more light-emitting devices may be disposed in the first device region DR1 and the second device region DR2, respectively. In addition, each pixel area SP may further include a pixel driving element (not shown) to drive the light emitting element in each pixel area SP.

Step S102 is performed to perform a first transposition process to transpose the N light-emitting elements from the first wafer (not shown) to the first transfer of the array substrate 100 through the first carrier (not shown) Set in TR1. In some embodiments, the N light emitting elements may be directly transposed on the array substrate 100 from the first wafer (not shown). In other embodiments, the N light emitting elements can be transferred from the first wafer to another temporary substrate (not shown), and then transferred to the array substrate 100 by the first transfer process. In some embodiments, multiple light-emitting devices may be formed on the first wafer by epitaxial growth. The wafer described herein means a semiconductor wafer or any substrate on which electronic components are formed. The plurality of light-emitting elements formed on the first wafer have substantially the same light-emitting spectrum. Each light emitting element may be a light emitting diode, such as a micro LED. In some embodiments, the size (ie, length or width) of the light-emitting element may be 5 μm to 30 μm. The light emitting element may place the first set of the plurality of light emitting elements on the array substrate 100 by stamp imprinting, electrostatic imprinting, or other transposition methods, for example. The first set of multiple light-emitting elements includes N light-emitting elements, and is referred to herein as N first light-emitting elements LD1. N first light emitting elements LD1 are placed in the first transposed region TR1. N first light-emitting elements LD1 may be placed in N sub-pixel areas SP having the same light emission spectrum in the first transposition area TR1, so that the adjacent first light-emitting elements LD1 in the first transposition area TR1 With substantially the same interval. In some embodiments, N first light emitting elements LD1 may be placed in the first element regions DR1 of the N sub-pixel regions SP in the first transposed region TR1.

In some embodiments, the length L of the first transposed region TR1 in the first direction D1 may be 0.5 cm to 15 cm. The width W of the first transposed region TR1 in the second direction D2 may be 0.5 cm to 15 cm. In addition, the outline of the first transposed region TR1 may be rectangular. However, those of ordinary skill in the art can adjust the size and contour of the first transposed region TR1 according to process requirements, and the invention is not limited thereto. In some embodiments, the area of the first transposed region TR1 may be substantially equal to the area of the first carrier. In addition, the contour of the first transposed region TR1 may also substantially overlap the contour of the first carrier. In this way, the distribution range of the N first light emitting elements LD1 carried by the first carrier may substantially overlap the contour of the first carrier. In other embodiments, the area of the first transposed region TR1 may be smaller than the area of the first carrier, so the distribution range of the N first light emitting elements LD1 carried by the first carrier may be located inside the contour of the first carrier.

Referring to FIGS. 1 and 2B, step S104 is performed to perform a second transposition process to transpose the X light-emitting elements from the first wafer to the first position of the array substrate 100 via the second carrier (not shown) In the second transpose area TR2. The second transposition process is similar to the first transposition process, but the second transposition process is to place the second set of multiple light-emitting elements into the second transposition region TR2 of the array substrate 100 via the second carrier. The second set of multiple light-emitting elements includes X light-emitting elements, and is referred to herein as X second light-emitting elements LD2. The first set and the second set of the plurality of light-emitting elements do not have an intersection, that is, the X second light-emitting elements LD2 are not equivalent to the N first light-emitting elements LD1, but have substantially the same light emission spectrum with each other. In some embodiments, the area of the second transposed region TR2 may be substantially equal to the area of the second carrier. In addition, the contour of the second transposed region TR2 may also substantially overlap the contour of the second carrier. In this way, the distribution range of the X second light emitting elements LD2 carried by the second carrier can substantially overlap the contour of the second carrier. In other embodiments, the area of the second transposed region TR2 may be smaller than the area of the second carrier, so the distribution range of the X second light emitting elements LD2 carried by the second carrier may be located inside the outline of the second carrier. On the other hand, similar to the first carrier, the second carrier may also be a polymer stamp or an electrostatic chuck.

The X second light emitting elements LD2 may be placed in the second element regions DR2 of the X sub-pixel regions SP in the second transposed region TR2. The first transposed region TR1 and the second transposed region TR2 partially overlap. In other words, there may be a boundary of the second transposed region TR2 within the first transposed region TR1, and vice versa. In addition, the N sub-pixel regions SP in the first transposed region TR1 partially overlap the X sub-pixel regions in the second transposed region TR2. In some embodiments, the contour and/or area of the first transposed region TR1 may be different from the contour and/or area of the second transposed region TR2. In some embodiments, the overlapping area of the first transposed region TR1 and the second transposed region TR2 may cover at least two sub-pixel regions SP having the same light emission spectrum. In the overlapping area of the first transposed region TR1 and the second transposed region TR2, the first light emitting element LD1 and the second light emitting element LD2 are placed in the first element region of the same group of sub-pixel regions SP having the same light emission spectrum, respectively DR1 and the second element region DR2. In the overlapping area of the first transposed region TR1 and the second transposed region TR2, the first light emitting element LD1 and the second light emitting element LD2 of each of the same group of sub-pixels SP may have a deviation in the first direction D1 Shift F1, and may have an offset F2 in the second direction D2. In some embodiments, the offset F1 and the offset F2 may be greater than 0 μm and less than or equal to 3 μm, respectively.

In other embodiments, the method for performing the second transposition process may also include transposing X light-emitting elements originating from the second wafer (not shown) to the second of the array substrate 100 through the second carrier Transpose area TR2. In some embodiments, multiple light-emitting elements may be formed on the second wafer by epitaxial growth. The plurality of light-emitting elements formed on the second wafer are similar to the light-emitting elements formed on the first wafer, but the emission spectrums are different from each other. For example, the light-emitting element formed on the second wafer may be a red light-emitting diode, and the light-emitting element formed on the first wafer may be a blue diode, a green diode, or an ultraviolet diode , Yellow light diode or white light diode. After forming a plurality of light-emitting elements on the second wafer, a subset of the plurality of light-emitting elements on the second wafer may be directly transposed onto the array substrate 100, or indirectly via another temporary substrate (not (Shown) transposed onto the array substrate 100. The subset of the plurality of light-emitting elements includes X light-emitting elements, and is referred to herein as X second light-emitting elements LD2. It can be seen that in these embodiments, the emission spectrum of the X second light-emitting elements LD2 is different from the emission spectrum of the N first light-emitting elements LD1. In addition, in the overlapping region of the first transposed region TR1 and the second transposed region TR2, the sub-pixel region SP may have at least two light emitting elements whose light emitting frequencies are different from each other.

Step S106 is performed to perform a third transposition process to transpose the Y light-emitting elements originating from the first wafer into the third transposition region TR3 of the array substrate 100 via a third carrier (not shown). The third transposition process is similar to the first transposition process, but the third transposition process is to place a third set of a plurality of light emitting elements derived from the first wafer on the third of the array substrate 100 via the third carrier Transpose area TR3. The third set of multiple light-emitting elements includes Y light-emitting elements, and is referred to herein as Y second light-emitting elements LD3. The first set and the third set of the plurality of light-emitting elements do not have an intersection, that is, Y second light-emitting elements LD3 are not equivalent to N first light-emitting elements LD1, but have substantially the same light-emitting spectrum with each other. In some embodiments, the area of the third transposed region TR3 may be substantially equal to the area of the third carrier. In addition, the contour of the third transposed region TR3 may also substantially overlap the contour of the third carrier. In this way, the distribution range of the Y second light emitting elements LD3 carried by the third carrier can substantially overlap the contour of the third carrier. In other embodiments, the area of the third transposed region TR3 may be smaller than the area of the third carrier, so the distribution range of the Y second light emitting elements LD3 carried by the third carrier may be located inside the outline of the third carrier. On the other hand, similar to the second carrier, the third carrier can also be a polymer stamp or an electrostatic chuck. In some embodiments, the second carrier and the third carrier have different shapes and/or areas. In other embodiments, the second carrier and the third carrier have the same shape and area, but different numbers of light-emitting elements are transposed respectively.

The Y second light emitting elements LD3 may be placed in the second element region DR2 of the Y sub-pixel regions SP having the same light emission spectrum in the third transposed region TR3. The first transposed region TR1 partially overlaps with the third transposed region TR3, and the second transposed region TR2 does not overlap with the third transposed region TR3. In other words, there may be a boundary of the third transposed region TR3 within the first transposed region TR1, and vice versa. In addition, the second transposed region TR2 does not have the boundary of the third transposed region TR3, and the third transposed region TR3 does not have the boundary of the second transposed region TR2. It can be seen from this that the N sub-pixel regions SP in the first transposed region TR1 partially overlap the Y sub-pixel regions in the third transposed region TR3. In addition, the X sub-pixel regions in the second transposed region TR2 and the Y sub-pixel regions in the third transposed region TR3 do not overlap. In some embodiments, the contour and/or area of the first transposed region TR1 may be different from the contour and/or area of the third transposed region TR3. In some embodiments, the overlapping area of the first transposed region TR1 and the third transposed region TR3 may cover at least two sub-pixel regions SP having the same light emission spectrum. In the overlapping area of the first transposed region TR1 and the third transposed region TR3, the first light emitting element LD1 and the second light emitting element LD3 are placed in the first element region of the same group of sub-pixel regions SP having the same light emission spectrum, respectively DR1 and the second element region DR2. In the overlapping area of the first transposed region TR1 and the third transposed region TR3, the first light emitting element LD1 and the second light emitting element LD2 of each of the same group of sub-pixels SP are in the first direction D1 and the second direction D2 may have an offset F3 and an offset F4, respectively. In some embodiments, the offset F3 and the offset F4 may be greater than 0 μm and less than or equal to 3 μm, respectively.

In other embodiments, the method of performing the third transposition process may also include transposing the Y light-emitting elements originating from the third wafer (not shown) to the third of the array substrate 100 through the third carrier Transpose area TR3. In some embodiments, a plurality of light emitting elements can be formed on the third wafer by epitaxial growth. The plurality of light-emitting elements formed on the third wafer are similar to the light-emitting elements formed on the first wafer, but the emission spectrums are different from each other. In addition, the light emitting spectrum of the light emitting elements formed on the third wafer may be substantially the same as or different from the light emitting spectrum of the light emitting elements formed on the second wafer. After forming a plurality of light-emitting elements on the third wafer, a subset of the plurality of light-emitting elements on the third wafer may be directly placed on the array substrate 100, or first transferred to another temporary substrate (not shown) Shown), and then placed in the third transposition region TR3 of the array substrate 100 by a third transposition process. The subset of the plurality of light emitting elements on the third wafer includes Y light emitting elements, and is referred to herein as Y second light emitting elements LD3. Therefore, in these embodiments, the light emission spectrum of the Y second light emitting elements LD3 is different from the light emission spectrum of the N first light emitting elements LD1. In addition, the sub-pixel region SP within the overlapping area of the first transposed region TR1 and the third transposed region TR3 may have at least two light-emitting elements whose emission frequencies are different from each other.

In some embodiments, step S108 may be further performed to perform the fourth transposition process. The fourth transposition process is similar to the third transposition process in step S106, and only the differences between the two are described here, and the same or similar parts are not repeated here. In the fourth transposition process, the Z light-emitting elements originating from the first wafer (or originating from another fourth wafer) are transposed to the first of the array substrate 100 via the fourth carrier (not shown) Four transposed zones in TR4. The fourth set of multiple light emitting elements of the first wafer (or a subset of the multiple light emitting elements of the fourth wafer) includes Z light emitting elements, and is referred to herein as Z second light emitting elements LD4. The first set and the fourth set of the plurality of light-emitting elements of the first wafer do not have an intersection, that is, the Z second light-emitting elements LD4 are not equivalent to the N first light-emitting elements LD1, but may have substantially the same light emission from each other Spectrum. In some embodiments, the light emission spectrum of the Z second light emitting elements LD4 derived from the fourth wafer is different from the light emission spectrum of the N first light emitting elements LD1. In some embodiments, the second carrier, the third carrier, and the fourth carrier have different shapes and/or areas. In other embodiments, any two of the second carrier, the third carrier, and the fourth carrier have the same shape and area, but carry different numbers of light-emitting elements.

The Z second light emitting elements LD4 may be placed in the second element region DR2 of the Z sub-pixel regions SP having the same light emission spectrum in the fourth transposed region TR4. The first transposed region TR1 and the fourth transposed region TR4 partially overlap, and the fourth transposed region TR4 does not overlap the second transposed region TR2 and the third transposed region TR3. In other words, there may be a boundary of the fourth transposed region TR4 within the first transposed region TR1, and vice versa. In addition, the second transposed area TR2 and the third transposed area TR3 do not have the boundary of the fourth transposed area TR4, and the fourth transposed area TR4 does not have the second transposed area TR2 and the third transposed area TR3 Border. From this, it can be seen that the N sub-pixel regions SP in the first transposed region TR1 partially overlap the Z sub-pixel regions SP in the fourth transposed region TR4. In addition, the X sub-pixel regions SP in the second transposed region TR2, the Y sub-pixel regions SP in the third transposed region TR3, and the Z sub-pixel regions SP in the fourth transposed region TR4 do not overlap. In some embodiments, the contour and/or area of the first transposed region TR1 may be different from the contour and/or area of the fourth transposed region TR4. In some embodiments, the overlapping area of the first transposed region TR1 and the fourth transposed region TR4 may cover at least two sub-pixel regions SP having the same light emission spectrum. In the overlapping area of the first transposed region TR1 and the fourth transposed region TR4, the first light emitting element LD1 and the second light emitting element LD4 are placed in the first element region of the same group of sub-pixel regions SP having the same light emission spectrum, respectively DR1 and the second element region DR2. In the overlapping area of the first transposed region TR1 and the third transposed region TR3, the first light emitting element LD1 and the second light emitting element LD4 of each of the same group of sub-pixels SP may have an offset in the first direction D1 A shift amount F5, and may have an offset amount F6 in the second direction D2. In some embodiments, the offset F5 and the offset F6 may be greater than 0 μm and less than or equal to 3 μm, respectively.

Those with ordinary knowledge in the art can perform other transposition processes similar to the second transposition process, the third transposition process, and the fourth transposition process according to the process requirements, so that the adjacent first light-emitting devices in the array substrate The offset between the LD1 and the second light emitting element (that is, the second light emitting element LD2, the second light emitting element LD3, or the second light emitting element LD4) has more different values. In addition, in some embodiments, steps S102 to S108 may be repeated, so that the first element region DR1 and the second element region DR2 of each group of sub-pixel regions SP of the same emission spectrum of the array substrate 100 are placed separately There are a first light emitting element LD1 and a second light emitting element (ie, second light emitting element LD2, second light emitting element LD3, or second light emitting element LD4). In some embodiments, the plurality of first transposed regions TR1 may not overlap each other, and the shapes of the plurality of first transposed regions TR1 may be the same as or different from each other. In addition, the areas of the plurality of first transposed regions TR1 and the number of the first light emitting elements LD1 contained may be the same as or different from each other. In other embodiments, the adjacent first transposed regions TR1 may partially overlap. In such embodiments, there may be an offset between sub-pixels in the first direction D1 and/or the second direction D2 between the first light-emitting elements LD1 of the adjacent sub-pixel regions SP partially overlapping each other (not Shown). In addition, the amount of sub-pixel shift in the sub-pixels SP arranged in the first direction D1 or the second direction D2 may have at least three or more values. In some embodiments, the overlapping area of the adjacent first transposed regions TR1 may cover at least two sub-pixel regions SP. In this way, at least two of the sub-pixels arranged along the second direction D2 may have the same offset between the sub-pixels. For example, the absolute value of the offset between the sub-pixels in the first direction D1 and the second direction D2 may be greater than 0 μm and less than or equal to 3 μm.

So far, the manufacturing of the display device 10 of the embodiment of the present invention has been completed. In an ideal situation, each time the first light-emitting element LD1 and the second light-emitting element (that is, the second light-emitting element LD2, the second light-emitting element LD3, or the second light-emitting element LD4) in the pixel area SP are in the second direction D2 The offsets of should be substantially zero, and the offsets in the first direction D1 should be the same as each other. However, based on the error caused by the transposition device/process, the offset in the second direction D2 may not be zero, and the offset in the first direction D1 may be different from each other. Compared with the method in which the transposition area of each transposition step is shifted by an offset in the column direction (second direction D2) or the row direction (first direction D1) than the transposition area of the previous transposition step A plurality of light-emitting devices are placed on the array substrate. In the embodiment of the present invention, the transposition region of the first transposition process partially overlaps the second transposition process to the third transposition process (or the second transposition process to the first Four transposition processes), and the transposition regions of the second transposition process to the third transposition process (or the second transposition process to the fourth transposition process) do not overlap each other. In other words, the transposed area of the first transposed process to the third transposed process (or the first transposed process to the fourth transposed process) of the embodiment of the present invention is not along the column direction (second direction D2) or row direction ( The first direction D1) is sequentially displaced. In this way, within the range of the first transposed region TR1, the first light-emitting element LD1 and the second light-emitting element (ie, the second light-emitting element LD2, the second light-emitting element LD3, or the second light-emitting element in the sub-pixel area SP LD4) The offset in the column direction (second direction D2) or the row direction (first direction D1) may have two or more values or three or more values. Therefore, the display device 10 of the embodiment of the present invention can eliminate the directionality of defects such as color mura or luminance mura under a limited and large chaotic shift variation, that is, It is possible to avoid defects such as uneven chromaticity or uneven brightness of the elongated strip extending along the column direction (second direction D2) and/or the row direction (first direction D1).

Next, the structure of the display device 10 of the embodiment of the present invention will be described with reference to FIG. 2B.

2B, the display device 10 according to an embodiment of the present invention includes an array substrate 100. The array substrate 100 includes a plurality of sub-pixel areas SP. A plurality of sub-pixel regions SP are arrayed along the first direction D1 and the second direction D2. Each of the plurality of sub-pixel regions SP includes a first element region DR1 and a second element region DR2 arranged along the first direction D1. The display device 10 further includes a plurality of first light-emitting elements LD1 and a plurality of second light-emitting elements (ie, second light-emitting elements LD2, second light-emitting elements LD3, and second light-emitting elements LD4). The plurality of first light emitting elements LD1 are respectively disposed in the plurality of first element regions DR1 of the plurality of sub-pixel regions SP. A plurality of second light emitting elements (ie, second light emitting element LD2, second light emitting element LD3, and second light emitting element LD4) are respectively disposed in the plurality of second element regions DR2 in the plurality of sub-pixel regions SP. Among the plurality of sub-pixel regions SP arranged along the first direction D1, the adjacent first light-emitting element LD1 and second light-emitting element (that is, the second light-emitting element LD2 and the second light-emitting element LD3 of any sub-pixel area SP And the second light emitting element LD4) has a first offset in the second direction D2. In addition, in the plurality of sub-pixel regions arranged in the first direction D1, the above-mentioned first offset has at least three values (for example, offset F2, offset F4, and offset F6). In some embodiments, in the area of the first transposed region TR1 (for example, an area ranging from 0.0025 cm ² to 225 cm ² ), the first offset described above has at least three values (for example, the offset F2 , Offset F4 and offset F6).

In some embodiments, in the sub-pixel areas SP arranged along the first direction D1, the first light-emitting element LD1 and the second light-emitting element (ie, the second light-emitting element LD2, the second light-emitting element) of at least two sub-pixel areas SP The element LD3 or the second light-emitting element LD4) have the same first offset. In some embodiments, the absolute value of the first offset is greater than 0 μm and less than or equal to 3 μm. In some embodiments, among the plurality of sub-pixel regions SP arranged along the second direction D2, the adjacent first light-emitting elements LD1 of any two adjacent sub-pixel regions SP have a direction in the first direction D1 The second offset (that is, the offset between sub-pixels). In addition, in the plurality of sub-pixel regions arranged along the second direction D2, the above-mentioned second offset has at least three kinds of values. In some embodiments, the above-mentioned second offsets of at least two sub-pixel regions SP arranged along the second direction D2 are the same as each other. In some embodiments, the absolute value of the second offset is greater than 0 μm and less than or equal to 3 μm. In some embodiments, the first light emitting element LD1 and the second light emitting element (the second light emitting element LD2, the second light emitting element LD3, and the second light emitting element LD4) are light emitting diodes having substantially the same light emitting spectrum. In some embodiments, the first light emitting element LD1 and the second light emitting element (the second light emitting element LD2, the second light emitting element LD3, and the second light emitting element LD4) are light emitting diodes having different light emitting spectra. In some embodiments, the length/width of the first light-emitting element LD1 and the second light-emitting element (second light-emitting element LD2, second light-emitting element LD3, and second light-emitting element LD4) are 5 μm to 30 μm, respectively.

3A and 3B are top schematic views of the transposition area of the first transposition process and the second transposition process of the manufacturing method of the display device 20 according to some other embodiments of the present invention. The manufacturing method of the display device 20 is similar to the manufacturing method of the display device 10 shown in FIGS. 2A and 2B. Only the differences between the two are described below, and the same or similar points will not be repeated.

Referring to FIG. 3A, a first transposition process is performed to transpose the N light-emitting devices on the first wafer to the first transposition region TR1a of the array substrate 100 through the first carrier. For simplicity, FIG. 3A only shows the array substrate 100 and the first transposed region TR1a. In some embodiments, the first transposition process may be performed multiple times, so that the distribution range of the plurality of first transposition regions TR1a covers the entire array substrate 100. In this embodiment, the shapes of the plurality of first transposed regions TR1a may be different from each other, and each is a non-rectangular arbitrary polygon. In this way, the extending directions of the boundaries of the plurality of first transposed regions TR1a may be staggered with each other. Therefore, it is possible to further eliminate the chromaticity unevenness or brightness unevenness of the elongated strip extending in the column direction (second direction D2) or the row direction (first direction D1) that may be generated between adjacent first transposed regions TR1a Defects.

Referring to FIG. 3B, a second transposition process is performed to transpose the X light-emitting elements from the first wafer (or the second wafer) to the first position of the array substrate 100 via the second carrier (not shown) In the second transpose area TR2a. In some embodiments, multiple second transposition processes may be performed so that the distribution range of the plurality of second transposition regions TR2a covers the entire array substrate 100. The second transposed region TR2a partially overlaps the first transposed region TR1a, and the plurality of second transposed regions TR2a do not overlap each other. In other words, each first transposed region TR1a may have a boundary of at least one second transposed region TR2, or each second transposed region TR2a may have a boundary of at least one first transposed region TR1a. Similar to the first transposed region TR1a, the shapes of the plurality of second transposed regions TR2a may be different from each other, and are respectively non-rectangular arbitrary polygons. In this way, the extending directions of the boundaries of the plurality of second transposed regions TR2a may be staggered with each other. Therefore, it is possible to further eliminate the chromaticity unevenness or brightness unevenness of a long strip extending in the column direction (second direction D2) or the row direction (first direction D1) that may be generated between adjacent second transposed regions TR2a Defects. In some embodiments, the extending direction of the boundary of the second transposed region TR2 may be interleaved with the extending direction of the boundary of the first transposed region TR1. Therefore, the directionality of the defects of uneven chromaticity or uneven brightness can be further eliminated, that is, the chromaticity uniformity and brightness uniformity of the display device 20 can be improved.

In summary, in comparison to placing the multiple light-emitting elements on the array in such a manner that the transposition area of each transposition step is displaced by an offset in the column direction or row direction from the transposition area of the previous transposition step On the substrate, the embodiment of the present invention makes the transposition area of the first transposition process partially overlap the subsequent transposition of the second transposition process to the third transposition process (or the second transposition process to the fourth transposition process) And the transposition areas of the second transposition process to the third transposition process (or the second transposition process to the fourth transposition process) do not overlap each other. In other words, the transposed regions of the first transposed process to the third transposed process (or the first transposed process to the fourth transposed process) of the embodiments of the present invention are not sequentially displaced along the column direction or the row direction. In this way, in a plurality of sub-pixel regions arranged along the column direction or the row direction, the offset amount of the first light-emitting element and the second light-emitting element in the sub-pixel area in the column direction or row direction may have more than two types Or more than three values. Therefore, the display device according to the embodiment of the present invention can eliminate the directionality of the defects of uneven chromaticity or uneven brightness in the display device, and can also avoid the occurrence of stripe-shaped chromaticity irregularities extending along the column direction and/or row direction The defect of uneven or uneven brightness.

Although the present invention has been disclosed as above with examples, it is not intended to limit the present invention. Any person with ordinary knowledge in the technical field can make some changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention shall be subject to the scope defined in the appended patent application.

10. 20: Display device 100: Array substrate D1: First direction D2: Second direction DR1: First element area DR2: Second element area F1, F2, F3, F4, F5, F6: Offset L: Length LD1: First light-emitting elements LD2, LD3, LD4: Second light-emitting element P: Pixel areas S100, S102, S104, S106, S108: Step SP: Sub-pixel areas TR1, TR1a: First transposed areas TR2, TR2a: No. Second transposed area TR3: third transposed area TR4: fourth transposed area W: width

FIG. 1 is a flowchart of a method of manufacturing a display device according to some embodiments of the present invention. 2A and 2B are top schematic views of different stages in the transposition process of the method for manufacturing a display device according to some embodiments of the present invention. 3A and 3B are top schematic views of the transposition area of the first transposition process and the second transposition process of the method for manufacturing a display device according to some other embodiments of the present invention.

10: display device 100: array substrate D1: first direction D2: second direction DR1: first element region DR2: second element region F1, F2, F3, F4, F5, F6: offset LD1: first light emission Elements LD2, LD3, LD4: second light-emitting element P: pixel area SP: sub-pixel area TR1: first transposed area TR2: second transposed area TR3: third transposed area TR4: fourth transposed area

Claims (7)

A manufacturing method of a display device includes: providing an array substrate, wherein the array substrate includes a plurality of sub-pixel areas, and each of the sub-pixel areas includes a first element area and a second element area; A transposition process, placing N first light-emitting elements in the first element regions in the N sub-pixel regions of the array substrate through a first carrier; performing a second transposition process by a The second carrier places X second light-emitting devices in the second device regions of the X sub-pixel regions of the array substrate; and performs a third transposition process, using a third carrier to place the Y The two light emitting elements are respectively placed in the second element areas in the Y sub-pixel areas of the array substrate, wherein the X sub-pixel areas and the Y sub-pixel areas do not overlap, and the N sub-pixel areas are respectively The X sub-pixel regions and the Y sub-pixel regions partially overlap. The method for manufacturing a display device as described in item 1 of the patent application range, wherein the second carrier and the third carrier have different shapes and/or areas. The method for manufacturing a display device as described in item 1 of the patent application scope, wherein the second carrier and the third carrier have the same shape and area, but each carries a different number of the second light-emitting elements. The method for manufacturing a display device as described in item 1 of the patent application range, wherein the first carrier, the second carrier, and the third carrier are respectively a polymer stamp or an electrostatic chuck. The method for manufacturing a display device as described in item 1 of the patent application range, wherein the light emission spectrums of the first light-emitting elements and the second light-emitting elements are substantially the same. The method for manufacturing a display device as described in item 1 of the patent application scope further includes: performing a fourth transposition process, placing Z second light-emitting elements on the array substrate Z times by a fourth carrier, respectively The second element regions in the pixel region, wherein the X sub-pixel regions, the Y sub-pixel regions and the Z sub-pixel regions do not overlap, and the N sub-pixel regions and the Z sub-pixel regions are partially overlapping. The method for manufacturing a display device as described in item 1 of the patent application range, wherein the light emission spectrums of the first light-emitting elements and the second light-emitting elements are different.

Images