TWI685667B - Magnetic field sensing apparatus - Google Patents

Abstract

A magnetic field sensing apparatus including a substrate, a plurality of magnetoresistance sensors and a plurality of magnetization direction setting devices is provided. A surface of the substrate includes a plurality of inclined surfaces and a plane surface. The magnetoresistance sensors include a plurality of first magnetoresistance sensors disposed at the inclined surfaces and a plurality of second magnetoresistance sensors disposed at the plane surface. The first magnetoresistance sensors include a first and a third portions and form a first full Wheatstone Bridge. The second magnetoresistance sensors include a second and a fourth portions and form a second full Wheatstone Bridge. The magnetization direction setting device include a first and a second magnetization direction setting devices. The first magnetization direction setting device is disposed beside and overlap with the first and the second portions. The second magnetization direction setting device is disposed beside and overlap with the third and the fourth portions.

Description

Magnetic field sensing device

The invention relates to a magnetic field sensing device.

With the development of technology, electronic products with navigation and positioning functions are becoming more and more diverse. Electronic compasses provide functions equivalent to traditional compasses in the application fields of car navigation, aviation and personal handheld devices. In order to realize the function of an electronic compass, the magnetic field sensing device becomes a necessary electronic component.

In a general magnetic field sensing device, a corresponding coil is usually provided next to the Wheatstone full bridge. The coil is used to reset/set the magnetic field direction of the magnetic sensing element in the full bridge. If you want to measure the magnetic field components in three different directions, you need three coils and related circuits to control the corresponding coils. Since the development trend of the handheld device is toward the trend of miniaturization, and the existing magnetic field sensing device uses a large number of coils and circuits, this leads to a complicated circuit design, which is not conducive to the application of the magnetic field sensing device. Therefore, how to produce a high-performance magnetic field sensing device with a simple circuit in a small area has become one of the development directions of those skilled in the art.

The invention provides a magnetic field sensing device, which has a simple circuit design and a high response speed.

An embodiment of the invention provides a magnetic field sensing device, including a substrate, a plurality of magnetoresistive sensors, and a plurality of magnetization direction setting elements. The substrate has a surface. The surface includes multiple slopes and planes. These magnetoresistive sensors include a plurality of first magnetoresistive sensors arranged on a plurality of inclined planes and a plurality of second magnetoresistive sensors arranged on a plane. These first magnetoresistive sensors include a first part and a third part, and constitute a first Wheatstone full bridge. These second magnetoresistive sensors include a second part and a fourth part, and constitute a second Wheatstone full bridge. These magnetization direction setting elements include a first magnetization direction setting element and a second magnetization direction setting element. The first magnetization direction setting element is disposed beside the first portion and the second portion, and overlapped with the first portion and the second portion. The second magnetization direction setting element is disposed beside the third portion and the fourth portion, and overlapped with the third portion and the fourth portion.

In an embodiment of the invention, the magnetic field sensing device described above further includes a current generator. The current generator is used to selectively apply current to the plurality of magnetization direction setting elements.

In an embodiment of the invention, a plurality of first bridge arms are formed between the first magnetoresistive sensors described above, and the first bridge arms are respectively disposed on the inclined planes.

In an embodiment of the invention, each of the first bridge arms described above includes a first magnetoresistive sensor belonging to the first part and a first magnetoresistive sensor belonging to the third part.

In an embodiment of the invention, a plurality of second bridge arms are formed between the above-mentioned second magnetoresistive sensors, and the second bridge arms are disposed on a plane.

In an embodiment of the invention, each of the above-mentioned second bridge arms includes a second magnetoresistive sensor belonging to the second part and a second magnetoresistive sensor belonging to the fourth part.

In an embodiment of the invention, the above-mentioned magnetoresistive sensors further include a plurality of third magnetoresistive sensors. These third magnetoresistive sensors are arranged on a plane. These magnetization direction setting elements further include a third magnetization direction setting element and a fourth magnetization direction setting element. These third magnetoresistive sensors include a fifth part and a sixth part, and constitute a third Whistle bridge. The third magnetization direction setting element is arranged beside the fifth part and overlapped with the fifth part. The fourth magnetization direction setting element is disposed beside the sixth portion and overlapped with the sixth portion.

In an embodiment of the invention, a plurality of third bridge arms are formed between the third magnetoresistive sensors, and the magnetization direction setting elements further include a third magnetization direction setting element and a fourth magnetization Direction setting element. The third magnetization direction setting element is disposed beside the first portion and the second portion, and overlapped with the first portion and the second portion. The fourth magnetization direction setting element is disposed beside the third portion and the fourth portion, and overlapped with the third portion and the fourth portion.

Based on the above, in the magnetic field sensing device of the embodiment of the present invention, the first and second magnetization direction setting elements are overlapped on different parts of the first and second Wheatstone full bridges, respectively, so the first and second magnetization directions The setting element can set/reset the magnetoresistive sensors in the two Wheatstone full bridges at the same time, so the magnetic field sensing device can set the number of elements to be used with less magnetization direction, and has a simple circuit design.

In order to make the above-mentioned features and advantages of the present invention more obvious and understandable, the embodiments are specifically described below in conjunction with the accompanying drawings for detailed description as follows.

FIG. 1 is a schematic top view of a magnetic field sensing device of the present invention. Fig. 2 is a schematic sectional view of section A-A' in Fig. 1. 3A and 3B are different layout methods of the anisotropic magnetoresistive sensor in FIG. 1.

Referring to FIGS. 1 and 2, in this embodiment, the magnetic field sensing device 100 includes a substrate 110, a plurality of magnetoresistive sensors 120, a plurality of magnetization direction setting elements 130, and a current generator 140. The above elements will be explained in detail in the following paragraphs.

In the embodiments of the present invention, the substrate 110 is, for example, a blank silicon substrate (blank silicon), a glass substrate, or a silicon substrate with an integrated circuit (integrated-circuit), and the present invention is not limited thereto. 2, the substrate 110 includes a first base layer BS1, an insulating layer 112, and a second base layer BS2, wherein the insulating layer 112 is located between the first and second base layers BS1, BS2. The material of the insulating layer 112 is, for example, silicon dioxide, aluminum oxide, aluminum nitride, silicon nitride, or other materials having an insulating function, and the invention is not limited thereto. The surface S of the second base layer BS2 includes a plurality of inclined planes IS connected to these inclined planes IS, where the inclined plane IS is inclined relative to the plane PS, and the number of inclined planes IS is four, but not limited thereto.

The magnetoresistive sensor 120 referred to in the embodiment of the present invention (indicating the area where it is located with a diagonal line) refers to a sensor whose resistance can be changed correspondingly through an external magnetic field change. The magnetoresistive sensor 120 may be an anisotropic magnetoresistive resistor (Anisotropic Magneto-Resistive resistor, AMR resistor). Referring to FIGS. 3A and 3B, the anisotropic magnetoresistive sensor 120 has, for example, a barber pole-like structure, that is, its surface is provided with an extension direction D relative to the anisotropic magnetoresistive sensor 120 A plurality of electrical shorting bars SB extending at an angle of 45 degrees, these shorting bars SB are spaced apart from each other and arranged in parallel on a ferromagnetic film FF, and the ferromagnetic film FF is anisotropic magnetoresistive The extending direction of the main body of the sensor 120 is the extending direction of the anisotropic magnetoresistive sensor 120. The sensing direction SD of the anisotropic magnetoresistive sensor 120 is perpendicular to the extending direction D. In addition, the opposite ends of the ferromagnetic film FF can be made tapered.

In the embodiment of the present invention, the magnetization direction setting element 130 (indicating the area where it is located) may be any one or a combination of coils, wires, metal sheets, and conductors that generate a magnetic field by energization. The number of magnetization direction setting elements 130 is, for example, four, and is referred to as first to fourth magnetization direction setting elements 132, 134, 136, and 138, respectively.

In the embodiments of the present invention, the current generator 140 refers to an electronic component used to provide current.

In order to explain the configuration effect of the magnetic field sensing device 100 of this embodiment, the basic principles of the magnetic field sensing device 100 of this embodiment for measuring the magnetic field are first introduced in the following paragraphs.

Before the anisotropic magnetoresistive sensor 120 starts to measure the external magnetic field H, the magnetization direction setting element 130 may be used to set its magnetization direction. In FIG. 3A, the magnetization direction setting element 130 can generate a magnetic field along the extension direction D (or the long axis direction) by energization, so that the anisotropic magnetoresistive sensor 120 has the magnetization direction M.

Next, the magnetization direction setting element 130 is not energized, so that the anisotropic magnetoresistive sensor 120 starts to measure the external magnetic field H. When there is no external magnetic field H, the magnetization direction M of the anisotropic magnetoresistive sensor 120 is maintained in the extension direction D. At this time, the current generator 140 can apply a current I to make the current I from the anisotropic magnetoresistive sensing When the left end of the detector 120 flows to the right end, the current I near the short-circuit bar SB flows perpendicular to the extending direction of the short-circuit bar SB, so that the current I near the short-circuit bar SB flows 45 degrees to the magnetization direction M at 45 degrees. The resistance value of the directional magnetoresistive sensor 120 is R.

When an external magnetic field H is oriented perpendicular to the extending direction D, the magnetization direction M of the anisotropic magnetoresistive sensor 120 will be deflected in the direction of the external magnetic field H, so that the magnetization direction and the current I near the short-circuit bar flow The angle of is greater than 45 degrees. At this time, the resistance value of the anisotropic magnetoresistive sensor 120 changes by -ΔR, which becomes R-ΔR, that is, the resistance value becomes smaller, where ΔR is greater than 0.

However, as shown in FIG. 3B, when the extending direction of the short-circuit bar SB of FIG. 3B is set at a direction 90 degrees from the extending direction of the short-circuit bar SB of FIG. 3A (at this time, the extending direction of the short-circuit bar SB of FIG. 3B is still 45 degrees to the extension direction D of the anisotropic magnetoresistive sensor 120), and when there is an external magnetic field H, in addition, the magnetic field H will still deflect the magnetization direction M to the direction of the external magnetic field H, at this time the magnetization direction The angle between M and the current I near the short-circuit bar SB will be less than 45 degrees, so the resistance value of the anisotropic magnetoresistive sensor 120 will become R+ΔR, that is, the resistance value of the anisotropic magnetoresistive sensor 120 Get bigger.

In addition, when the magnetization direction setting element 130 sets the magnetization direction M of the anisotropic magnetoresistive sensor 120 to the reverse direction shown in FIG. 3A, then the anisotropic magnetoresistive sense of FIG. 3A under the external magnetic field H The resistance value of the detector 120 becomes R+ΔR. Furthermore, when the magnetization direction setting element 130 sets the magnetization direction M of the anisotropic magnetoresistive sensor 120 to the reverse direction shown in FIG. 3B, then the anisotropic magnetoresistance of FIG. 3B under the external magnetic field H The resistance value of the sensor 120 becomes R-ΔR.

Therefore, those of ordinary skill in the art can use these magnetoresistive sensors 120 and the circuit design of the Wheatstone full-bridge to correspondingly measure the magnetic field component signals of the external magnetic field H in different directions.

As can be seen from the above, before measuring the external magnetic field H, it is necessary to set the magnetization direction of the magnetoresistive sensor 120 by the magnetization direction setting element 130. The configuration effect of this embodiment will be described in detail in the following paragraphs.

The arrangement of each element in the magnetic field sensing device 100 of this embodiment will be described in detail in the following paragraphs.

Please refer to FIGS. 1 and 2. In this embodiment, these magnetoresistive sensors 120 respectively constitute three Wheatstone full-bridge FWBs, and are called first, second, and third Wheatstone full-bridge FWB1. , FWB2, FWB3. According to different ownership relationships of Wheatstone full bridges FWB1~FWB3, these magnetoresistive sensors 120 can be divided into a plurality of first magnetoresistive sensors 122, a plurality of second magnetoresistive sensors 124 and a plurality of first Three magnetoresistive sensors 126, wherein the first magnetoresistive sensors 122 are used to form a first Wheatstone full-bridge FWB1, and the second magnetoresistive sensors 124 are used to form a second Wheatstone full-bridge FWB2 And these third magnetoresistive sensors 126 constitute a third Wheatstone full-bridge FWB3. These first and second magnetoresistive sensors 122 and 124 are arranged in the X-axis direction and extend in the Y-axis direction. These third magnetoresistive sensors 126 are arranged in the Y-axis direction and extend in the X-axis direction. The first magnetoresistive sensors 122 are disposed on the plurality of inclined surfaces IS, and the second and third magnetoresistive sensors 124 and 126 are respectively disposed at different places on the plane PS. Specifically, the second magnetoresistive sensors 124 are disposed on the right of the first magnetoresistive sensors 122, and the third magnetoresistive sensors 126 are disposed on the first magnetoresistive sensors 122. Below. That is, the magnetic field sensing device 100 includes one first Wheatstone full bridge FWB1 on the slope IS and two second and third Wheatstone full bridges FWB2 and FWB3 on the plane PS.

In detail, the first magnetoresistive sensor 122 further includes first and third parts P1 and P3 according to different setting methods of the magnetization direction. These second magnetoresistive sensors 124 further include second and fourth parts P2 and P4. These third magnetoresistive sensors 126 further include fifth and sixth parts P5 and P6. In the following paragraphs, the arrangement relationship between the magnetoresistive sensor 120, the magnetization direction setting element 130, and the Wheatstone full-bridge FWB will be described in sections.

The first magnetization direction setting element 132 is disposed beside the first and second portions P1 and P2 (for example, below, but not limited to), and overlaps the first and second portions P1 and P2. That is to say, the first magnetization direction setting element 132 is provided overlapping the first portion P1 belonging to the first Wheatstone full bridge FWB1 and the second portion P2 belonging to the second Wheatstone full bridge FWB2.

The second magnetization direction setting element 134 is disposed beside the third and fourth portions P3 and P4 (not shown, such as below, but not limited to this), and is overlapped with the third and fourth portions P3 and P4. That is to say, the second magnetization direction setting element 134 is overlapped with the third portion P3 belonging to the first Wheatstone full bridge FWB1 and the fourth portion P4 belonging to the second Wheatstone full bridge FWB2.

The third and fourth magnetization direction setting elements 136 and 138 are respectively disposed beside the fifth and sixth parts P5 and P6 (not shown, such as below, but not limited thereto). That is to say, the third and fourth magnetization direction setting elements 136 and 138 are overlapped and provided on different parts P5 and P6 belonging to the same third Wheatstone full-bridge FWB3.

In the first Wheatstone full-bridge FWB1, these first magnetoresistive sensors 122 form a plurality of first bridge arms ARM1 (for example, four, for example, which is shown by only one reference number in FIG. 1) ). The first bridge arms ARM1 are respectively arranged on the inclined surfaces IS. Each first bridge arm ARM1 includes a first magnetoresistive sensor 122 in the first part P1 and a first magnetoresistive sensor 122 in the third part P3. Referring to FIG. 1, from another point of view, each first bridge arm ARM1 overlaps the first and second magnetization direction setting elements 132 and 134.

In the second Wheatstone full-bridge FWB2, these second magnetoresistive sensors 124 form a plurality of second bridge arms ARM2 (for example, four, which are shown by only one reference number in FIG. 1) ). These second bridge arms ARM2 are respectively disposed on these planes PS. Each second bridge arm ARM2 includes a second magnetoresistive sensor 124 belonging to the second part P2 and a second magnetoresistive sensor 124 belonging to the fourth part P4. Referring to FIG. 1, from another point of view, each second bridge arm ARM2 overlaps the first and second magnetization direction setting elements 132 and 134.

In the third Wheatstone full-bridge FWB3, these third magnetoresistive sensors 126 form a plurality of third bridge arms ARM3 (for example, four, which are shown by only one reference number in FIG. 1) ). The third bridge arms ARM3 are respectively disposed on the planes PS, and are different from the positions of the second bridge arms ARM2. Each third bridge arm ARM3 includes a third magnetoresistive sensor 126 belonging to the fifth part P5 and a third magnetoresistive sensor 126 belonging to the sixth part P6. Referring to FIG. 1, from another point of view, each third bridge arm ARM3 and the third and fourth magnetization direction setting elements 136 and 138 are overlapped.

The current generator 140 is further coupled to the above-mentioned plurality of magnetization direction setting elements 130 and is used to selectively apply a current I to these magnetization direction setting elements 130. The current generator 140 is coupled to the first and second magnetization direction setting elements 132 and 134 through wires to form an S-shaped loop. The current generator 140 is also coupled to the third and fourth magnetization direction setting elements 136 and 138 by wires to form another S-shaped circuit.

With the above configuration, the current generator 140 can provide the current I of the first and second magnetization direction setting elements 132, 134 in the positive X-axis direction and the negative X-axis direction, respectively, and the current generator 140 can provide the third, The current I of the fourth magnetization direction setting elements 136 and 138 in the positive Y-axis direction and in the negative Y-axis direction. In other words, the current I provided by the current generator 140 is set to the current flowing in the elements 132, 134 in the first, second magnetization direction antiparallel to each other (Anti-parallel), magnetic field H is also set to the current I generated by another _M Antiparallel to each other. The third and fourth magnetization direction setting elements 136, 138 are also similar to the first and second magnetization direction setting elements 132, 134, except that the direction of current flow and the setting magnetic field _HM are different from the first and second magnetization direction setting elements 132 , 134, will not repeat them here.

In addition, in the first and second magnetic field direction setting elements 132 and 134 of FIG. 1, the current I flows in the positive X-axis direction and the negative X-axis direction, respectively. The magnetic field sensing device 100 may also include a switching circuit (not shown), and the switching circuit is coupled to the current generator 140 and the magnetization direction setting elements 130 described above, and provides a current path switching function, so that The current I flows in the two magnetic field direction setting elements 132 and 134 are adjusted to the negative X-axis direction and the positive X-axis direction, respectively. Whereby to change the direction of the magnetic field H _M set, thereby to set / reset the magnetization direction of each of the magnetoresistive sensor 120. Similarly, the switching circuit can also set the third and fourth magnetic field direction of the current I flowing in the elements 136, 138 are adjusted to the positive and negative Y-axis direction Y-axis direction, a direction to change the setting of the magnetic field H _M.

According to this, before the magnetic field sensing device 100 detects the external magnetic field, those with ordinary knowledge in the technical field can sense the magnetoresistance in these first, second, and third Wheatstone full bridges FWB1, FWB2, and FWB3 The device 120 sets/resets its magnetization direction, and then further places the magnetic field sensing device 100 in an external magnetic field, and measures based on the electrical signal output by the first Wheatstone full-bridge FWB1 in response to the external magnetic field. The magnetic field component in the Z-axis direction, and the magnetic field component in the X-axis direction is measured according to the electrical signal output by the second Wheatstone full-bridge FWB2 in response to the external magnetic field, and based on the third Wheatstone full-bridge FWB3 The magnetic field component in the Y-axis direction is measured in response to the electrical signal output by the external magnetic field. According to this, the magnetic field sensing device 100 of this embodiment can measure the magnetic field component in the three-axis direction.

It should be noted that in the above embodiment, the magnetic field sensing device 100 has three Wheatstone full bridges FWB1~FWB3, and can detect the magnetic field components in the three-axis direction. In other embodiments, the magnetic field sensing device may also have the first and second Wheatstone full-bridges FWB1, FWB2 without the Wheatstone full-bridge FWB3, that is, it can detect the magnetic field components in the two axis directions. The invention is not limited to this.

In summary, in the magnetic field sensing device of the embodiment of the present invention, the plurality of first magnetoresistive sensors include first and third parts and constitute a first Wheatstone full bridge, and a plurality of second magnetoresistive sensors The detector includes the second and fourth parts and constitutes the second Wheatstone full bridge. The first magnetization direction setting element is arranged beside the first part belonging to the first Wheatstone full bridge and the second part belonging to the second Wheatstone full bridge and is overlapped with the first and second parts, and the second magnetization direction setting element It is arranged beside the third part belonging to the first Wheatstone full bridge and the fourth part belonging to the second Wheatstone full bridge and overlapped with the third and fourth parts. The magnetic field sensing device can simultaneously set/reset the magnetization direction of the magnetoresistive sensors in the two Wheatstone full bridges through the first and second magnetization direction setting elements, so the number of magnetization direction setting elements can be reduced , And has a simpler circuit design. Moreover, since the first and second magnetization direction setting elements can simultaneously set/reset the first and second magnetoresistive sensors in the first and second Wheatstone full bridges, the magnetic field sensing device has a faster responding speed.

Although the present invention has been disclosed as above with examples, it is not intended to limit the present invention. Any person with ordinary knowledge in the technical field can make some changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention shall be subject to the scope defined in the appended patent application.

100‧‧‧Magnetic field sensing device 110‧‧‧ substrate 112‧‧‧Insulation 120‧‧‧Magnetoresistive sensor, anisotropic magnetoresistive sensor 122‧‧‧The first magnetoresistive sensor 124‧‧‧Second magnetoresistive sensor 126‧‧‧The third magnetoresistive sensor 130‧‧‧Magnetization direction setting element 132‧‧‧First magnetization direction setting element 134‧‧‧Second magnetization direction setting element 136‧‧‧ Third magnetization direction setting element 138‧‧‧Fourth magnetization direction setting element 140‧‧‧current generator A-A’‧‧‧ section BS1‧‧‧First base layer BS2‧‧‧Second base layer D‧‧‧Extending direction FWB‧‧‧Wheatstone Bridge FWB1~ FWB3‧‧‧‧First Wheatstone Full Bridge~Third Wheatstone Full Bridge H‧‧‧External magnetic field M‧‧‧Magnetization direction I‧‧‧Current IS‧‧‧Bevel PS‧‧‧Plane P1~P6‧‧‧Part 1~Part 6 S‧‧‧Surface SB‧‧‧Short bar X‧‧‧X axis Y‧‧‧Y axis Z‧‧‧Z axis

FIG. 1 is a schematic top view of a magnetic field sensing device of the present invention. Fig. 2 is a schematic sectional view of section A-A' in Fig. 1. 3A and 3B are different layout methods of the anisotropic magnetoresistive sensor in FIG. 1.

100‧‧‧Magnetic field sensing device

110‧‧‧ substrate

120‧‧‧Magnetoresistive sensor, anisotropic magnetoresistive sensor

122‧‧‧The first magnetoresistive sensor

124‧‧‧Second magnetoresistive sensor

126‧‧‧The third magnetoresistive sensor

130‧‧‧Magnetization direction setting element

132‧‧‧First magnetization direction setting element

134‧‧‧Second magnetization direction setting element

136‧‧‧ Third magnetization direction setting element

138‧‧‧Fourth magnetization direction setting element

140‧‧‧current generator

A-A’‧‧‧ section

FWB‧‧‧Wheatstone Bridge

FWB1~FWB3‧‧‧‧First Wheatstone Full Bridge~Third Wheatstone Full Bridge

I‧‧‧Current

IS‧‧‧Bevel

PS‧‧‧Plane

P1~P6‧‧‧Part 1~Part 6

S‧‧‧Surface

SB‧‧‧Short bar

X‧‧‧X axis

Y‧‧‧Y axis

Z‧‧‧Z axis

Claims (9)

A magnetic field sensing device, including: The substrate has a surface, and the surface includes a plurality of slopes and planes; A plurality of magnetoresistive sensors, including a plurality of first magnetoresistive sensors arranged on the plurality of inclined surfaces and a plurality of second magnetoresistive sensors arranged on the plane, wherein, The plurality of first magnetoresistive sensors include a first part and a third part, and constitute a first Wheatstone full bridge, The plurality of second magnetoresistive sensors include a second part and a fourth part, and constitute a second Wheatstone full bridge; and A plurality of magnetization direction setting elements, including a first magnetization direction setting element and a second magnetization direction setting element, among them, The first magnetization direction setting element is disposed beside the first portion and the second portion, and is overlapped with the first portion and the second portion; The second magnetization direction setting element is disposed beside the third portion and the fourth portion, and overlapped with the third portion and the fourth portion. The magnetic field sensing device as described in item 1 of the patent application scope further includes a current generator for selectively applying current to the plurality of magnetization direction setting elements. The magnetic field sensing device according to item 1 of the patent application scope, wherein a plurality of first bridge arms are formed between the plurality of first magnetoresistive sensors, and the plurality of first bridges The arms are respectively provided on the plurality of inclined surfaces. The magnetic field sensing device according to item 3 of the patent application scope, wherein, Each of the first bridge arms includes a first magnetoresistive sensor belonging to the first part and a first magnetoresistive sensor belonging to the third part. The magnetic field sensing device as described in item 1 of the patent application scope, wherein a plurality of second electric bridge arms are formed between each of the plurality of second magnetoresistive sensors, and the plurality of second electric bridges The arm is arranged on the plane. The magnetic field sensing device according to item 5 of the patent application scope, wherein each of the second bridge arms includes a second magnetoresistive sensor belonging to the second part and a magnetic sensor belonging to the fourth part The second magnetoresistive sensor. According to the magnetic field sensing device described in item 1 of the patent application range, the plurality of magnetoresistive sensors further includes a plurality of third magnetoresistive sensors, and the plurality of third magnetoresistive sensors are disposed on the On the plane, The plurality of magnetization direction setting elements further include a third magnetization direction setting element and a fourth magnetization direction setting element, Wherein, the plurality of third magnetoresistive sensors includes a fifth part and a sixth part, and constitutes a third Wyeth same full bridge, among them, The third magnetization direction setting element is disposed beside the fifth portion and overlapped with the fifth portion; The fourth magnetization direction setting element is disposed beside the sixth portion and overlapped with the sixth portion. The magnetic field sensing device according to item 7 of the patent application scope, wherein, A plurality of third bridge arms are formed between the plurality of third magnetoresistive sensors, and the plurality of magnetization direction setting elements further include a third magnetization direction setting element and a fourth magnetization direction setting element, The third magnetization direction setting element is disposed beside the first portion and the second portion, and overlapped with the first portion and the second portion, The fourth magnetization direction setting element is disposed beside the third portion and the fourth portion, and overlapped with the third portion and the fourth portion. The magnetic field sensing device according to item 1 of the patent application scope, wherein the type of the magnetoresistive sensor is an out-of-phase magnetoresistive sensor.

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