TWI683179B - Photosensitive resin composition, photosensitive element using the same, method for forming resist pattern, and method for manufacturing printed circuit board - Google Patents
Photosensitive resin composition, photosensitive element using the same, method for forming resist pattern, and method for manufacturing printed circuit board Download PDFInfo
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- C08F2/38—Polymerisation using regulators, e.g. chain terminating agents, e.g. telomerisation
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- C08F257/00—Macromolecular compounds obtained by polymerising monomers on to polymers of aromatic monomers as defined in group C08F12/00
- C08F257/02—Macromolecular compounds obtained by polymerising monomers on to polymers of aromatic monomers as defined in group C08F12/00 on to polymers of styrene or alkyl-substituted styrenes
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- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
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- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
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Abstract
本發明的目的在於提供在使用投影曝光方式而形成抗蝕劑圖案的情況下,可形成解析度優異的抗蝕劑圖案的感光性樹脂組成物,提供一種感光性樹脂組成物,其含有(A)黏合劑聚合物、(B)具有乙烯性不飽和鍵的光聚合性化合物、(C)光聚合起始劑、(D)光增感劑、及(E)聚合抑制劑,所述(E)聚合抑制劑的含量相對於所述(A)黏合劑聚合物及所述(B)具有乙烯性不飽和鍵的光聚合性化合物的固體成分總量100質量份而言為0.03質量份~0.3質量份。An object of the present invention is to provide a photosensitive resin composition capable of forming a resist pattern with excellent resolution when a resist pattern is formed using a projection exposure method, and to provide a photosensitive resin composition containing (A ) Binder polymer, (B) photopolymerizable compound with ethylenic unsaturated bond, (C) photopolymerization initiator, (D) photosensitizer, and (E) polymerization inhibitor, said (E ) The content of the polymerization inhibitor is 0.03 parts by mass to 0.3 parts by mass relative to 100 parts by mass of the total solid content of the (A) binder polymer and the (B) photopolymerizable compound having an ethylenically unsaturated bond. Quality parts.
Description
本揭示是有關於一種感光性樹脂組成物、及使用其的感光性元件、抗蝕劑圖案的形成方法以及印刷電路板的製造方法。The present disclosure relates to a photosensitive resin composition, a photosensitive element using the same, a method for forming a resist pattern, and a method for manufacturing a printed circuit board.
先前,在印刷電路板的製造領域中,作為蝕刻處理或鍍敷處理等中所使用的抗蝕劑材料,廣泛使用感光性樹脂組成物及感光性元件,所述感光性元件具有在支撐體上形成有使用該感光性樹脂組成物而形成的層(以下亦稱為「感光性樹脂層」),在感光性樹脂層上配置有保護層的結構。Conventionally, in the field of printed circuit board manufacturing, as a resist material used in etching processing, plating processing, etc., photosensitive resin compositions and photosensitive elements have been widely used, and the photosensitive elements have been provided on a support A layer formed using the photosensitive resin composition (hereinafter also referred to as "photosensitive resin layer") is formed, and a protective layer is disposed on the photosensitive resin layer.
印刷電路板可使用所述感光性元件,藉由例如以下的順序而製造。亦即,首先將感光性元件的感光性樹脂層層壓於覆銅積層板等電路形成用基板上。此時,以感光性樹脂層與支撐體接觸的面(以下亦稱為感光性樹脂層的「下表面」)的相反側的面(以下亦稱為感光性樹脂層的「上表面」)與電路形成用基板的形成電路的面密接的方式進行層壓。因此,在將保護層配置於感光性樹脂層的上表面的情況下,一面剝去保護層一面進行該層壓作業。而且,層壓可藉由將感光性樹脂層加熱壓接於電路形成用基板上而進行(常壓層壓法)。The printed circuit board can be manufactured using the photosensitive element by, for example, the following procedure. That is, first, the photosensitive resin layer of the photosensitive element is laminated on a circuit-forming substrate such as a copper-clad laminate. At this time, the surface opposite to the surface where the photosensitive resin layer contacts the support (hereinafter also referred to as the "lower surface" of the photosensitive resin layer) (hereinafter also referred to as the "upper surface" of the photosensitive resin layer) and The circuit forming substrate is laminated so that the circuit-forming surfaces are in close contact. Therefore, when the protective layer is disposed on the upper surface of the photosensitive resin layer, this lamination operation is performed while peeling the protective layer. Moreover, lamination can be performed by heat-pressing the photosensitive resin layer on the circuit-forming substrate (normal pressure lamination method).
其次,通過遮罩膜等對感光性樹脂層進行圖案曝光。此時,以曝光前或曝光後的任意時序剝離支撐體。其後,藉由顯影液將感光性樹脂層的未曝光部溶解或分散除去。其次,實施蝕刻處理或鍍敷處理而形成導體圖案,最終將感光性樹脂層的硬化部剝離除去。Next, the photosensitive resin layer is subjected to pattern exposure through a mask film or the like. At this time, the support is peeled at any timing before or after exposure. Thereafter, the unexposed portion of the photosensitive resin layer is dissolved or dispersed and removed by the developer. Next, an etching process or a plating process is performed to form a conductor pattern, and finally the cured portion of the photosensitive resin layer is peeled off and removed.
然而,作為所述圖案曝光的手法,近年來引用投影曝光方式,亦即,經由透鏡於感光性樹脂層上照射投影出光罩影像的光化射線,對感光性樹脂層進行曝光。投影曝光方式與使用遮罩膜等的接觸曝光方式相比而言,可確保高對準性。因此,在要求印刷電路板中的電路形成的微細化的最近,非常關注投影曝光方式。However, as the method of pattern exposure, in recent years, a projection exposure method has been cited, that is, actinic rays projecting a reticle image are irradiated on the photosensitive resin layer through a lens to expose the photosensitive resin layer. Compared with a contact exposure method using a mask film or the like, the projection exposure method can ensure high alignment. Therefore, in recent times, miniaturization of circuit formation in printed circuit boards has been required, and a projection exposure method has been paid close attention to.
作為投影曝光方式中所使用的光源,使用超高壓水銀燈等。一般情況下,多使用利用曝光波長為365 nm的i射線單色光的曝光機,但有時亦使用利用曝光波長為405 nm的h射線單色光、或ihg混合射線的曝光機。作為投影曝光方式,為了獲得高解析性,一般採用單色光且分割曝光方式,因此存在由於單色光而照射能量低,為了分割曝光,造成曝光時間變長的傾向。另一方面,接觸曝光方式一般採用ihg混合射線且總括曝光方式,因此存在曝光時間變短的傾向。因此,自量產時的效率提高的觀點考慮,以投影曝光機的照度與接觸曝光機相比較而言變高的方式進行設計,而且存在投影曝光機的每一次的曝光時間與接觸曝光機相比較而言變短的傾向。As a light source used in the projection exposure method, an ultra-high pressure mercury lamp or the like is used. Generally, an exposure machine using i-ray monochromatic light with an exposure wavelength of 365 nm is often used, but sometimes an exposure machine using h-ray monochromatic light with an exposure wavelength of 405 nm, or ihg mixed rays is also used. As a projection exposure method, in order to obtain high resolution, a monochromatic light and split exposure method are generally used. Therefore, the irradiation energy due to monochromatic light is low, and the exposure time tends to become longer for split exposure. On the other hand, the contact exposure method generally uses ihg mixed rays and the collective exposure method, so there is a tendency that the exposure time becomes shorter. Therefore, from the viewpoint of improving efficiency at the time of mass production, the illuminance of the projection exposure machine is designed to be higher than that of the contact exposure machine, and each exposure time of the projection exposure machine is different from that of the contact exposure machine. In comparison, it tends to be shorter.
隨著利用此種投影曝光方式的曝光方法的開發,開始研究可形成具有細線密接性的抗蝕劑圖案的感光性樹脂組成物(例如參照專利文獻1)。 [現有技術文獻] [專利文獻]With the development of an exposure method using such a projection exposure method, research has begun on a photosensitive resin composition that can form a resist pattern having fine line adhesion (see, for example, Patent Document 1). [Prior Art Literature] [Patent Literature]
[專利文獻1]國際公開第2009/078380號公報[Patent Document 1] International Publication No. 2009/078380
[發明所欲解決之課題][Problems to be solved by the invention]
近年來,隨著高細線封裝基板的普及,導體圖案的進一步微細化不斷進展,要求在此種微細導體圖案的形成中所使用的感光性樹脂組成物可形成解析度優異的抗蝕劑圖案。而且存在如下傾向:隨著需要解析度優異的抗蝕劑圖案的半導體封裝製品的市場不斷增長,對感光性樹脂組成物的要求特性亦變化,與對量產性做出貢獻的光感度相比而言,更重視對良率做出貢獻的解析度。因此,特別是在半導體封裝等領域中,持續需要即便使解析度降低1 μm的單位,亦會使解析性提高。而且,要求感光性樹脂組成物可形成定義為「所形成的影像的高度/所形成的影像的寬度」的「縱橫比」高的抗蝕劑圖案。In recent years, with the popularization of high-definition package substrates, further miniaturization of conductor patterns has been progressing, and it is required that the photosensitive resin composition used in the formation of such fine conductor patterns can form a resist pattern with excellent resolution. Moreover, there is a tendency that as the market for semiconductor packaging products requiring a resist pattern with excellent resolution continues to grow, the required characteristics of the photosensitive resin composition also change, compared with the light sensitivity that contributes to mass productivity In particular, more emphasis is placed on the resolution that contributes to yield. Therefore, especially in the field of semiconductor packaging and the like, there is a continuing need to improve the resolution even if the resolution is reduced by a unit of 1 μm. Furthermore, it is required that the photosensitive resin composition can form a resist pattern having a high “aspect ratio” defined as “the height of the formed image/the width of the formed image”.
為了提高解析性,研究使感光性樹脂層的交聯密度提高的方法。然而,投影曝光機非常難以使每一次的曝光時間變短,從而提高曝光部的反應性。In order to improve the resolution, a method for improving the cross-linking density of the photosensitive resin layer is studied. However, it is very difficult for the projection exposure machine to shorten the exposure time for each exposure, thereby improving the reactivity of the exposure section.
而且,在使用現有的感光性樹脂組成物,藉由高照度投影曝光機進行曝光的情況下,所期望的抗蝕劑圖案的周邊部分亦硬化,難以形成解析度優異的抗蝕劑圖案。Moreover, when using a conventional photosensitive resin composition and exposing with a high-illuminance projection exposure machine, the peripheral portion of the desired resist pattern is also hardened, making it difficult to form a resist pattern with excellent resolution.
因此,要求適合投影曝光機的曝光環境的感光性樹脂組成物,具體而言要求即便在使用投影曝光方式的情況下,亦可形成解析度優異的抗蝕劑圖案的感光性樹脂組成物。Therefore, a photosensitive resin composition suitable for the exposure environment of a projection exposure machine is required, and specifically, a photosensitive resin composition capable of forming a resist pattern with excellent resolution even when a projection exposure method is used.
本揭示是鑒於所述現有技術所具有的課題而成者,其目的在於提供在使用投影曝光方式而形成抗蝕劑圖案的情況下,可形成解析度優異的抗蝕劑圖案的感光性樹脂組成物、及使用其的感光性元件、抗蝕劑圖案的形成方法以及印刷電路板的製造方法。 [解決課題之手段]The present disclosure is made in view of the problems of the prior art, and an object thereof is to provide a photosensitive resin composition capable of forming a resist pattern with excellent resolution when a resist pattern is formed using a projection exposure method And a photosensitive element using the same, a method for forming a resist pattern, and a method for manufacturing a printed circuit board. [Means to solve the problem]
為了達成所述目的,本揭示提供一種感光性樹脂組成物,其含有(A)黏合劑聚合物、(B)具有乙烯性不飽和鍵的光聚合性化合物、(C)光聚合起始劑、(D)光增感劑、及(E)聚合抑制劑,所述(E)聚合抑制劑的含量相對於所述(A)黏合劑聚合物及所述(B)具有乙烯性不飽和鍵的光聚合性化合物的固體成分總量100質量份而言為0.03質量份~0.3質量份。In order to achieve the above object, the present disclosure provides a photosensitive resin composition containing (A) a binder polymer, (B) a photopolymerizable compound having an ethylenically unsaturated bond, (C) a photopolymerization initiator, (D) A photosensitizer, and (E) a polymerization inhibitor, the content of the (E) polymerization inhibitor relative to the (A) binder polymer and the (B) having an ethylenically unsaturated bond From 100 parts by mass of the total solid content of the photopolymerizable compound, it is 0.03 parts by mass to 0.3 parts by mass.
該感光性樹脂組成物藉由具有所述構成,在使用投影曝光方式而形成抗蝕劑圖案的情況下,可形成解析度優異的抗蝕劑圖案。特別是藉由使(E)成分的含量為0.3質量份以下,可使曝光時間變短,可對量產的效率提高做出貢獻,藉由使(E)成分的含量為0.03質量份以上,可使曝光部的光反應充分地進行,藉由反應率提高而可抑制抗蝕劑膨潤性,使解析度變良好。因此,本揭示的感光性樹脂組成物可作為投影曝光用感光性樹脂組成物而使用,特別是可作為用以製造要求高解析性、高縱橫比、高密接性、高顯像性及高作業性的超高密度配線基板的投影曝光用感光性樹脂組成物而使用。The photosensitive resin composition having the above-described structure can form a resist pattern with excellent resolution when a resist pattern is formed using a projection exposure method. In particular, by setting the content of (E) component to 0.3 parts by mass or less, the exposure time can be shortened, which can contribute to the improvement of mass production efficiency. By setting the content of (E) component to 0.03 parts by mass or more, The photoreaction of the exposed portion can be sufficiently progressed, and by increasing the reaction rate, the swelling of the resist can be suppressed and the resolution can be improved. Therefore, the photosensitive resin composition of the present disclosure can be used as a photosensitive resin composition for projection exposure, and in particular, it can be used for manufacturing requiring high resolution, high aspect ratio, high adhesion, high image developability and high work It is used for the photosensitive resin composition for projection exposure of the ultra-high density wiring board of the nature.
而且,在本揭示的感光性樹脂組成物中,所述(E)聚合抑制劑亦可含有下述通式(I)所表示的化合物。 [化1]式中,R5 表示鹵素原子、氫原子、碳數1~20的烷基、碳數3~10的環烷基、胺基、芳基、巰基、碳數1~10的烷基巰基、烷基的碳數為1~10的羧基烷基、碳數1~20的烷氧基或雜環基,m表示以使m+n成為6以下的方式選擇的2以上的整數,n表示以使m+n成為6以下的方式選擇的0以上的整數,在n為2以上的整數的情況下,R5 可分別相同亦可不同。Furthermore, in the photosensitive resin composition of the present disclosure, the (E) polymerization inhibitor may contain a compound represented by the following general formula (I). [Chemical 1] In the formula, R 5 represents a halogen atom, a hydrogen atom, a C 1-20 alkyl group, a C 3-10 cycloalkyl group, an amine group, an aryl group, a mercapto group, a C 1-10 alkyl mercapto group, an alkyl group Carboxyalkyl group having 1 to 10 carbon atoms, alkoxy group having 1 to 20 carbon atoms or heterocyclic group, m represents an integer of 2 or more selected so that m+n becomes 6 or less, and n represents such that m+n becomes an integer of 0 or more selected as 6 or less. When n is an integer of 2 or more, R 5 may be the same or different.
在藉由該感光性樹脂組成物,使用投影曝光方式而形成抗蝕劑圖案的情況下,可形成解析度更優異、且縱橫比更高的抗蝕劑圖案。When a resist pattern is formed using a projection exposure method with this photosensitive resin composition, a resist pattern with a higher resolution and a higher aspect ratio can be formed.
另外,在本揭示的感光性樹脂組成物中,所述(D)光增感劑的含量亦可為相對於所述(A)黏合劑聚合物及所述(B)具有乙烯性不飽和鍵的光聚合性化合物的固體成分總量100質量份而言為1.0質量份以下。In addition, in the photosensitive resin composition of the present disclosure, the content of the (D) photosensitizer may have an ethylenically unsaturated bond with respect to the (A) binder polymer and the (B) The total solid content of the photopolymerizable compound of 100 parts by mass is 1.0 part by mass or less.
在藉由該感光性樹脂組成物,使用投影曝光方式而形成抗蝕劑圖案的情況下,可抑制抗蝕劑圖案的形狀惡化及抗蝕劑基腳的產生,可使解析度更良好。When the resist pattern is formed by the projection exposure method using this photosensitive resin composition, the deterioration of the shape of the resist pattern and the generation of resist feet can be suppressed, and the resolution can be improved.
本揭示還提供一種感光性元件,其包含:支撐體;以及感光性樹脂層,感光性樹脂層使用所述本揭示的感光性樹脂組成物而形成於所述支撐體上。The present disclosure also provides a photosensitive element including: a support; and a photosensitive resin layer formed on the support using the photosensitive resin composition of the present disclosure.
該感光性元件包含使用所述本揭示的感光性樹脂組成物而形成的感光性樹脂層,因此在使用投影曝光方式而形成抗蝕劑圖案的情況下,可形成解析度優異、且縱橫比高的抗蝕劑圖案。Since this photosensitive element includes the photosensitive resin layer formed using the photosensitive resin composition of the present disclosure, when a resist pattern is formed using a projection exposure method, it can form an excellent resolution and a high aspect ratio Resist pattern.
本揭示還提供一種抗蝕劑圖案的形成方法,其包含:使用所述本揭示的感光性樹脂組成物或所述本揭示的感光性元件,於基板上形成感光性樹脂層的步驟;使用投影出光罩影像的光化射線,經由透鏡對所述感光性樹脂層進行曝光的步驟;以及藉由顯影將所述感光性樹脂層的未曝光部自基板上除去的步驟。The present disclosure also provides a method for forming a resist pattern, which includes the steps of forming a photosensitive resin layer on a substrate using the photosensitive resin composition of the present disclosure or the photosensitive element of the present disclosure; using projection A step of exposing the actinic rays of the photomask image to the photosensitive resin layer through a lens; and a step of removing the unexposed portion of the photosensitive resin layer from the substrate by development.
該抗蝕劑圖案的形成方法包含使用所述本揭示的感光性樹脂組成物或所述本揭示的感光性元件而形成感光性樹脂層的步驟,因此在使用投影曝光方式而形成抗蝕劑圖案的情況下,可形成解析度優異、且縱橫比高的抗蝕劑圖案。This method of forming a resist pattern includes the step of forming a photosensitive resin layer using the photosensitive resin composition of the present disclosure or the photosensitive element of the present disclosure, and therefore, a projection pattern is used to form the resist pattern In the case of, a resist pattern with excellent resolution and high aspect ratio can be formed.
本揭示進一步提供一種印刷電路板的製造方法,其包含:對藉由所述本揭示的抗蝕劑圖案的形成方法而形成有抗蝕劑圖案的基板進行蝕刻處理或鍍敷處理,形成導體圖案的步驟。The present disclosure further provides a method of manufacturing a printed circuit board, which includes: performing etching or plating on the substrate formed with the resist pattern by the method for forming a resist pattern of the present disclosure to form a conductor pattern A step of.
該印刷電路板的製造方法藉由所述本揭示的抗蝕劑圖案的形成方法而形成抗蝕劑圖案,因此可形成解析度優異、且縱橫比高的抗蝕劑圖案,可提供適於印刷電路板的高密度化的印刷電路板的製造方法。 [發明的效果]The method of manufacturing the printed circuit board forms the resist pattern by the method of forming the resist pattern of the present disclosure, and therefore can form a resist pattern with excellent resolution and a high aspect ratio, which can provide suitable printing A method for manufacturing a printed circuit board with a high density of circuit boards. [Effect of invention]
藉由本揭示,可提供在使用投影曝光方式而形成抗蝕劑圖案的情況下,可形成解析度優異、且縱橫比高的抗蝕劑圖案的感光性樹脂組成物、及使用其的感光性元件、抗蝕劑圖案的形成方法以及印刷電路板的製造方法。According to the present disclosure, when a resist pattern is formed using a projection exposure method, a photosensitive resin composition capable of forming a resist pattern with excellent resolution and a high aspect ratio, and a photosensitive element using the same can be provided , A method of forming a resist pattern and a method of manufacturing a printed circuit board.
以下,視需要一面參照圖式一面關於本揭示的實施方式加以詳細說明。另外,於以下的實施方式中,其構成要素(亦包括要素步驟等)除了特別明示的情況以及認為是原理上明確需要的情況等,不言而喻並不必須需要。亦即,應解釋為並不對本揭示作出不當的限制。而且,於本說明書中,所謂「(甲基)丙烯酸」是表示丙烯酸及與其對應的甲基丙烯酸的至少一者。而且,關於(甲基)丙烯酸酯等其他類似表達亦同樣。Hereinafter, the embodiments of the present disclosure will be described in detail with reference to the drawings as necessary. In addition, in the following embodiments, its constituent elements (including element steps and the like) are not necessarily required except when specifically stated and when it is considered to be clearly necessary in principle. That is, it should be interpreted as not improperly limiting the present disclosure. In addition, in this specification, "(meth)acrylic acid" means at least one of acrylic acid and methacrylic acid corresponding thereto. Moreover, the same applies to other similar expressions such as (meth)acrylate.
而且,於本說明書中,「步驟」的術語不僅僅是獨立的步驟,即使在無法與其他步驟明確地區別的情況下,若達成該步驟的所期望的作用,則亦包含於本用語中。In addition, in this specification, the term "step" is not only an independent step, even if it cannot be clearly distinguished from other steps, if the desired effect of the step is achieved, it is also included in this term.
另外,於本說明書中,使用「~」而表示的數值範圍表示包括「~」之前後所記載的數值分別作為最小值及最大值的範圍。而且,於本說明書中階段性記載的數值範圍中,某一階段的數值範圍的上限值或下限值亦可置換為其他階段的數值範圍的上限值或下限值。而且,於本說明書中所記載的數值範圍中,該數值範圍的上限值或下限值亦可置換為實施例中所示的值。而且,於本說明書中,「層」的術語在作為平面圖而觀察時,除了形成於整個面的形狀的結構以外,亦包含形成於一部分上的形狀的結構。In addition, in this specification, the numerical range shown using "-" means the range including the numerical value described before and after "-" as a minimum value and a maximum value, respectively. In addition, in the numerical range described in stages in this specification, the upper limit value or the lower limit value of the numerical range of a certain stage may be replaced with the upper limit value or the lower limit value of the numerical range of another stage. In addition, in the numerical range described in this specification, the upper limit value or the lower limit value of the numerical range may be replaced with the values shown in the examples. In addition, in this specification, the term "layer" when viewed as a plan view includes, in addition to the structure of the shape formed on the entire surface, the structure of the shape formed on a part.
<感光性樹脂組成物> 本實施方式的感光性樹脂組成物是有關於含有(A)黏合劑聚合物、(B)具有乙烯性不飽和鍵的光聚合性化合物、(C)光聚合起始劑、(D)光增感劑、及(E)聚合抑制劑,所述(E)聚合抑制劑的含量相對於所述(A)黏合劑聚合物及所述(B)具有乙烯性不飽和鍵的光聚合性化合物的固體成分總量100質量份而言為0.03質量份~0.3質量份的感光性樹脂組成物。以下,關於本實施方式的感光性樹脂組成物中所使用的各成分加以更詳細的說明。<Photosensitive resin composition> The photosensitive resin composition of this embodiment relates to (A) a binder polymer, (B) a photopolymerizable compound having an ethylenically unsaturated bond, and (C) photopolymerization initiation Agent, (D) light sensitizer, and (E) polymerization inhibitor, the content of the (E) polymerization inhibitor is ethylenically unsaturated with respect to the (A) binder polymer and the (B) The total solid content of the photopolymerizable compound of the bond is 0.03 parts by mass to 0.3 parts by mass of the photosensitive resin composition for 100 parts by mass. Hereinafter, each component used in the photosensitive resin composition of the present embodiment will be described in more detail.
[(A)黏合劑聚合物] 作為本實施方式的感光性樹脂組成物中所可使用的(A)黏合劑聚合物(以下亦稱為「(A)成分」),例如可列舉丙烯酸系樹脂、苯乙烯系樹脂、環氧系樹脂、醯胺系樹脂、醯胺環氧系樹脂、醇酸系樹脂、酚系樹脂等。自使鹼性顯影性進一步提高的立場考慮,可含有丙烯酸系樹脂。該些可單獨使用一種或組合使用兩種以上。[(A) Binder Polymer] Examples of the (A) binder polymer (hereinafter also referred to as "(A) component") that can be used in the photosensitive resin composition of this embodiment include acrylic resins. , Styrene resin, epoxy resin, amide resin, amide epoxy resin, alkyd resin, phenol resin, etc. From the standpoint of further improving the alkali developability, an acrylic resin may be contained. These can be used alone or in combination of two or more.
(A)黏合劑聚合物例如可藉由使聚合性單體進行自由基聚合而製造。亦即,亦可以說(A)黏合劑聚合物具有源自所述聚合性單體的結構單元。作為所述聚合性單體,例如可列舉苯乙烯、乙烯基甲苯、α-甲基苯乙烯等在α-位或芳香族環中進行取代的可聚合的苯乙烯衍生物、二丙酮丙烯醯胺等丙烯醯胺、丙烯腈、乙烯基-正丁基醚等乙烯醇的醚類、(甲基)丙烯酸烷基酯、甲基丙烯酸苄酯等(甲基)丙烯酸苄酯、(甲基)丙烯酸四氫糠基酯、(甲基)丙烯酸二甲基胺基乙酯、(甲基)丙烯酸二乙基胺基乙酯、(甲基)丙烯酸縮水甘油酯、(甲基)丙烯酸-2,2,2-三氟乙酯、(甲基)丙烯酸-2,2,3,3-四氟丙酯、(甲基)丙烯酸、α-溴丙烯酸、α-氯丙烯酸、β-呋喃基(甲基)丙烯酸、β-苯乙烯基(甲基)丙烯酸、馬來酸、馬來酸酐、馬來酸單甲酯、馬來酸單乙酯、馬來酸單異丙酯等馬來酸單酯、富馬酸、肉桂酸、α-氰基肉桂酸、衣康酸、巴豆酸、丙炔酸等。該些可單獨使用一種或組合使用兩種以上。(A) The binder polymer can be produced by, for example, radically polymerizing a polymerizable monomer. That is, it can also be said that (A) the binder polymer has a structural unit derived from the polymerizable monomer. Examples of the polymerizable monomer include styrene, vinyl toluene, α-methylstyrene, and other polymerizable styrene derivatives substituted in the α-position or aromatic ring, and diacetone acrylamide. Ethers such as acrylamide, acrylonitrile, vinyl-n-butyl ether, vinyl alcohol, alkyl (meth)acrylate, benzyl methacrylate, etc., benzyl (meth)acrylate, (meth)acrylic acid Tetrahydrofurfuryl, dimethylaminoethyl (meth)acrylate, diethylaminoethyl (meth)acrylate, glycidyl (meth)acrylate, -2,2 (meth)acrylic acid ,2-trifluoroethyl, (meth)acrylic acid-2,2,3,3-tetrafluoropropyl ester, (meth)acrylic acid, α-bromoacrylic acid, α-chloroacrylic acid, β-furanyl (methyl ) Acrylic acid, β-styryl (meth) acrylic acid, maleic acid, maleic anhydride, monomethyl maleate, monoethyl maleate, monoisopropyl maleate and other maleic acid monoesters, Fumaric acid, cinnamic acid, α-cyanocinnamic acid, itaconic acid, crotonic acid, propionic acid, etc. These can be used alone or in combination of two or more.
該些中,自使顯影性進一步提高的立場考慮,可為(甲基)丙烯酸烷基酯。作為(甲基)丙烯酸烷基酯,例如可列舉下述通式(II)所表示的化合物、及該些化合物的烷基經羥基、環氧基、鹵素基等取代的化合物。 H2 C=C(R6 )-COOR7 (II)Among these, from the standpoint of further improving developability, it may be an alkyl (meth)acrylate. Examples of the alkyl (meth)acrylate include compounds represented by the following general formula (II) and compounds in which the alkyl groups of these compounds are substituted with hydroxyl groups, epoxy groups, halogen groups, and the like. H 2 C=C(R 6 )-COOR 7 (II)
通式(II)中,R6 表示氫原子或甲基,R7 表示碳數1~12的烷基。作為R7 所表示的碳數1~12的烷基,例如可列舉甲基、乙基、丙基、丁基、戊基、己基、庚基、辛基、壬基、癸基、十一烷基、十二烷基、該些基的結構異構體等。In the general formula (II), R 6 represents a hydrogen atom or a methyl group, and R 7 represents an alkyl group having 1 to 12 carbon atoms. Examples of the C 1-12 alkyl represented by R 7 include methyl, ethyl, propyl, butyl, pentyl, hexyl, heptyl, octyl, nonyl, decyl, and undecane Group, dodecyl group, structural isomers of these groups, etc.
作為所述通式(II)所表示的(甲基)丙烯酸烷基酯,例如可列舉(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸丙酯、(甲基)丙烯酸丁酯、(甲基)丙烯酸戊酯、(甲基)丙烯酸己酯、(甲基)丙烯酸庚酯、(甲基)丙烯酸辛酯、(甲基)丙烯酸-2-乙基己酯、(甲基)丙烯酸壬酯、(甲基)丙烯酸癸酯、(甲基)丙烯酸十一烷基酯、(甲基)丙烯酸十二烷基酯等。該些可單獨使用一種或組合使用兩種以上。Examples of the alkyl (meth)acrylate represented by the general formula (II) include methyl (meth)acrylate, ethyl (meth)acrylate, propyl (meth)acrylate, and (meth) ) Butyl acrylate, pentyl (meth)acrylate, hexyl (meth)acrylate, heptyl (meth)acrylate, octyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, Nonyl (meth)acrylate, decyl (meth)acrylate, undecyl (meth)acrylate, dodecyl (meth)acrylate, etc. These can be used alone or in combination of two or more.
而且,自使鹼性顯影性進一步提高的立場考慮,(A)黏合劑聚合物亦可含有羧基。含有羧基的(A)黏合劑聚合物例如可藉由使具有羧基的聚合性單體與其他聚合性單體進行自由基聚合而製造。其中,自使鹼性顯影性進一步提高的立場考慮,所述具有羧基的聚合性單體可為(甲基)丙烯酸,亦可為甲基丙烯酸。而且,含有羧基的(A)黏合劑聚合物的酸值亦可為50 mgKOH/g~250 mgKOH/g。Moreover, from the standpoint of further improving the alkali developability, (A) the binder polymer may contain a carboxyl group. The (A) binder polymer containing a carboxyl group can be produced by radical polymerization of a polymerizable monomer having a carboxyl group and another polymerizable monomer, for example. Among them, from the standpoint of further improving the alkali developability, the polymerizable monomer having a carboxyl group may be (meth)acrylic acid or methacrylic acid. Moreover, the acid value of the (A) binder polymer containing a carboxyl group can also be 50 mgKOH/g to 250 mgKOH/g.
作為(A)黏合劑聚合物的羧基含量(黏合劑聚合物中所使用的具有羧基的聚合性單體相對於聚合性單體總量的調配率),自使鹼性顯影性與耐鹼性平衡良好地提高的立場考慮,可以是12質量%~50質量%、12質量%~40質量%、15質量%~35質量%、或15質量%~30質量%。該羧基含量若為12質量%以上,則存在鹼性顯影性提高的傾向;若為50質量%以下,則存在耐鹼性優異的傾向。(A) The carboxyl group content of the binder polymer (a compounding ratio of the polymerizable monomer having a carboxyl group used in the binder polymer to the total amount of polymerizable monomers), self-alkali developing property and alkali resistance Considering a well-balanced standpoint, it may be 12% by mass to 50% by mass, 12% by mass to 40% by mass, 15% by mass to 35% by mass, or 15% by mass to 30% by mass. If the content of the carboxyl group is 12% by mass or more, the alkali developability tends to be improved, and if it is 50% by mass or less, the alkali resistance tends to be excellent.
另外,(A)黏合劑聚合物中的源自具有羧基的聚合性單體的結構單元的含量與所述具有羧基的聚合性單體的調配率相關,因此可以是12質量%~50質量%、12質量%~40質量%、15質量%~35質量%、或15質量%~30質量%。In addition, the content of the structural unit derived from the polymerizable monomer having a carboxyl group in the binder polymer (A) is related to the compounding ratio of the polymerizable monomer having a carboxyl group, so it may be 12% by mass to 50% by mass , 12% by mass to 40% by mass, 15% by mass to 35% by mass, or 15% by mass to 30% by mass.
而且,自使密接性及耐化學品性進一步提高的立場考慮,(A)黏合劑聚合物亦可使用苯乙烯或苯乙烯衍生物作為聚合性單體。在將所述苯乙烯或苯乙烯衍生物作為聚合性單體的情況下,自使密接性及耐化學品性更良好的立場考慮,其含量(黏合劑聚合物中所使用的苯乙烯或苯乙烯衍生物相對於聚合性單體總量的調配率)可以是10質量%~60質量%,亦可為15質量%~50質量%。若該含量為10質量%以上,則存在密接性提高的傾向;若為60質量%以下,則存在如下的傾向:可抑制在顯影時剝離片變大,抑制剝離所需要的時間的長時間化。此處,於本說明書中,所謂「耐化學品性」是表示對於後述的抗蝕劑圖案的形成方法或印刷電路板的製造方法中所使用的化學藥品(顯影液、水、蝕刻液等)的耐受性。Moreover, from the standpoint of further improving adhesion and chemical resistance, (A) the binder polymer may use styrene or a styrene derivative as a polymerizable monomer. In the case where the styrene or styrene derivative is used as a polymerizable monomer, the content (from the styrene or benzene used in the binder polymer) is considered from the standpoint of better adhesion and chemical resistance The blending ratio of the ethylene derivative with respect to the total amount of polymerizable monomers) may be 10% by mass to 60% by mass, or 15% by mass to 50% by mass. If the content is 10% by mass or more, there is a tendency for adhesion to be improved; if it is 60% by mass or less, there is a tendency that the peeling sheet becomes larger during development and the time required for peeling is suppressed from being prolonged . Here, in this specification, "chemical resistance" refers to chemicals (developing solution, water, etching solution, etc.) used in a method of forming a resist pattern or a method of manufacturing a printed circuit board described later. Tolerance.
另外,(A)黏合劑聚合物中的源自苯乙烯或苯乙烯衍生物的結構單元的含量與所述苯乙烯或苯乙烯衍生物的調配率相關,因此可為10質量%~60質量%,亦可為15質量%~50質量%。In addition, the content of the structural unit derived from styrene or a styrene derivative in the binder polymer (A) is related to the compounding ratio of the styrene or styrene derivative, and therefore may be 10% by mass to 60% by mass , 15% to 50% by mass.
而且,自使解析度及縱橫比更良好的立場考慮,(A)黏合劑聚合物亦可使用(甲基)丙烯酸苄酯作為聚合性單體。自使解析度及縱橫比進一步提高的立場考慮,(A)黏合劑聚合物中的(甲基)丙烯酸苄酯的含量可以是15質量%~50質量%。Furthermore, from the standpoint of better resolution and aspect ratio, (A) the binder polymer may use benzyl (meth)acrylate as the polymerizable monomer. From the standpoint of further improving the resolution and aspect ratio, the content of (A) benzyl (meth)acrylate in the binder polymer may be 15% by mass to 50% by mass.
該些黏合劑聚合物可單獨使用一種或組合使用兩種以上。作為組合使用兩種以上的情況下的(A)黏合劑聚合物,例如可列舉包含不同聚合性單體的兩種以上的黏合劑聚合物、不同重量平均分子量的兩種以上的黏合劑聚合物、不同分散度的兩種以上的黏合劑聚合物等。These binder polymers can be used alone or in combination of two or more. Examples of (A) binder polymers when two or more kinds are used in combination include, for example, two or more binder polymers containing different polymerizable monomers, and two or more binder polymers having different weight average molecular weights. , Two or more binder polymers with different dispersion.
(A)黏合劑聚合物可藉由通常的方法而製造。具體而言,例如可藉由使(甲基)丙烯酸烷基酯、(甲基)丙烯酸、及苯乙烯等進行自由基聚合而製造。(A) The binder polymer can be produced by a usual method. Specifically, for example, it can be produced by radical polymerization of alkyl (meth)acrylate, (meth)acrylic acid, styrene, and the like.
作為(A)黏合劑聚合物的重量平均分子量,自使機械強度與鹼性顯影性平衡良好地提高的立場考慮,可以是20,000~300,000、40,000~150,000、40,000~120,000、或50,000~80,000。(A)黏合劑聚合物的重量平均分子量若為20,000以上,則存在耐顯影液性更優異的傾向;若為300,000以下,則存在抑制顯影時間變長的傾向。另外,本說明書中的重量平均分子量是藉由凝膠滲透層析法(Gel Permeation Chromatography,GPC)而測定,藉由使用標準聚苯乙烯而製成的校準曲線進行換算而得的值。(A) The weight average molecular weight of the binder polymer may be 20,000 to 300,000, 40,000 to 150,000, 40,000 to 120,000, or 50,000 to 80,000 from the standpoint of improving the mechanical strength and alkali developability in a balanced manner. (A) If the weight average molecular weight of the binder polymer is 20,000 or more, the developer resistance tends to be more excellent; if it is 300,000 or less, there is a tendency to suppress the development time from becoming longer. In addition, the weight average molecular weight in this specification is a value measured by gel permeation chromatography (Gel Permeation Chromatography, GPC), and converted by the calibration curve made using standard polystyrene.
(A)黏合劑聚合物的含量可以相對於(A)成分及後述的(B)成分的固體成分總量100質量份而言為30質量份~80質量份、40質量份~75質量份、或50質量份~70質量份。若(A)成分的含量為該範圍內,則感光性樹脂組成物的塗膜性及光硬化物的強度變得更良好。(A) The content of the binder polymer may be 30 parts by mass to 80 parts by mass, 40 parts by mass to 75 parts by mass relative to 100 parts by mass of the total solid content of the component (A) and the component (B) described later. Or 50 to 70 parts by mass. When the content of the component (A) is within this range, the coating properties of the photosensitive resin composition and the strength of the photocured product become better.
[(B)具有乙烯性不飽和鍵的光聚合性化合物] 本實施方式的感光性樹脂組成物含有(B)具有乙烯性不飽和鍵的光聚合性化合物(以下亦稱為「(B)成分」)。(B)成分若為在分子內具有至少一個乙烯性不飽和鍵的光聚合性化合物,則可並無特別限制地使用。[(B) Photopolymerizable compound having an ethylenically unsaturated bond] The photosensitive resin composition of this embodiment contains (B) a photopolymerizable compound having an ethylenically unsaturated bond (hereinafter also referred to as "(B) component "). (B) If a component is a photopolymerizable compound which has at least one ethylenic unsaturated bond in a molecule, it can be used without particular limitation.
作為(B)成分,例如可列舉使多元醇與α,β-不飽和羧酸反應而得的化合物、雙酚型(甲基)丙烯酸酯化合物、具有胺基甲酸酯鍵的(甲基)丙烯酸酯化合物等胺基甲酸酯單體、壬基苯氧基伸乙基氧基(甲基)丙烯酸酯、壬基苯氧基八伸乙基氧基(甲基)丙烯酸酯、γ-氯-β-羥基丙基-β'-(甲基)丙烯醯氧基乙基鄰苯二甲酸酯、β-羥基乙基-β'-(甲基)丙烯醯氧基乙基鄰苯二甲酸酯、β-羥基丙基-β'-(甲基)丙烯醯氧基乙基鄰苯二甲酸酯、(甲基)丙烯酸烷基酯等。該些可單獨使用一種或組合使用兩種以上。Examples of the component (B) include a compound obtained by reacting a polyhydric alcohol with an α,β-unsaturated carboxylic acid, a bisphenol-type (meth)acrylate compound, and a (methyl) group having a urethane bond Carbamate monomers such as acrylate compounds, nonylphenoxyethyloxy (meth)acrylate, nonylphenoxy octaethyloxy (meth)acrylate, γ-chloro- β-Hydroxypropyl-β'-(meth)acryloyloxyethyl phthalate, β-hydroxyethyl-β'-(meth)acryloyloxyethyl phthalate Ester, β-hydroxypropyl-β'-(meth)acryloxyethyl phthalate, alkyl (meth)acrylate, etc. These can be used alone or in combination of two or more.
於所述中,自使解析性、密接性、及抗蝕劑基腳產生的抑制性平衡良好地提高的立場考慮,(B)成分可含有雙酚型(甲基)丙烯酸酯化合物。作為所述雙酚型(甲基)丙烯酸酯化合物,亦可為下述通式(III)所表示的化合物。 [化2] In the above, the component (B) may contain a bisphenol-type (meth)acrylate compound from the standpoint of improving the balance between the resolution, the adhesion, and the inhibition of the resist footing. The bisphenol-type (meth)acrylate compound may also be a compound represented by the following general formula (III). [Chem 2]
在通式(III)中,R1 、R2 、R3 及R4 分別獨立地表示氫原子或甲基。X及Y分別獨立地表示伸乙基或伸丙基,XO及YO分別獨立地表示氧基伸乙基(以下有時稱為「EO基」)或氧基伸丙基(以下有時稱為「PO基」)。p1 、p2 、q1 及q2 分別獨立地表示0~40的數值。其中,p1 +q1 及p2 +q2 均為1以上。在X為伸乙基、Y為伸丙基的情況下,p1 +p2 為1~40,q1 +q2 為0~20。在X為伸丙基、Y為伸乙基的情況下,p1 +p2 為0~20,q1 +q2 為1~40。p1 、p2 、q1 及q2 表示EO基或PO基的結構單元數,因此若為單一分子,則表示整數值;若為多種分子的集合體,則表示作為平均值的有理數。另外,EO基及PO基可分別連續而嵌段地存在,亦可無規地存在。In the general formula (III), R 1 , R 2 , R 3 and R 4 each independently represent a hydrogen atom or a methyl group. X and Y independently represent ethylidene or propylene, XO and YO independently represent oxyethylidene (hereinafter sometimes referred to as "EO group") or oxypropylene (hereinafter sometimes referred to as "PO base"). p 1 , p 2 , q 1 and q 2 each independently represent a value of 0-40. However, both p 1 +q 1 and p 2 +q 2 are 1 or more. When X is ethylidene and Y is propylidene, p 1 +p 2 is 1-40, and q 1 +q 2 is 0-20. When X is propylidene and Y is ethylidene, p 1 +p 2 is 0-20, and q 1 +q 2 is 1-40. p 1 , p 2 , q 1 and q 2 represent the number of structural units of an EO group or a PO group, so if it is a single molecule, it represents an integer value; if it is a collection of multiple molecules, it represents a rational number as an average value. In addition, the EO group and the PO group may be present continuously and in blocks, or may be present randomly.
在通式(III)中,X及Y均為伸乙基的情況下,自解析度及密接性更優異的觀點考慮,p1 +p2 +q1 +q2 可以是1~20、1~10、或1~7。In the general formula (III), when X and Y are both ethylidene groups, p 1 +p 2 +q 1 +q 2 may be 1-20, 1 from the viewpoint of more excellent self-resolution and adhesion. ~10, or 1~7.
作為通式(III)所表示的化合物,例如可列舉2,2-雙(4-((甲基)丙烯醯氧基聚乙氧基)苯基)丙烷、2,2-雙(4-((甲基)丙烯醯氧基聚丙氧基)苯基)丙烷、2,2-雙(4-((甲基)丙烯醯氧基聚乙氧基聚丙氧基)苯基)丙烷等。該些可單獨使用一種或組合使用兩種以上。Examples of the compound represented by the general formula (III) include 2,2-bis(4-((meth)acryloyloxypolyethoxy)phenyl)propane and 2,2-bis(4-( (Meth)acryloyloxypolypropyloxy)phenyl)propane, 2,2-bis(4-((meth)acryloyloxypolyethoxypolypropyloxy)phenyl)propane, etc. These can be used alone or in combination of two or more.
關於可作為雙酚型(甲基)丙烯酸酯化合物而商業性獲得者,例如可列舉2,2-雙(4-(甲基丙烯醯氧基二乙氧基)苯基)丙烷(新中村化學工業股份有限公司製造的「BPE-200」)、2,2-雙(4-(甲基丙烯醯氧基五乙氧基)苯基)丙烷(新中村化學工業股份有限公司製造的「BPE-500」、或日立化成股份有限公司製造的「FA-321M」)、2,2-雙(4-(甲基丙烯醯氧基十五乙氧基)苯基)丙烷(新中村化學工業股份有限公司製造的「BPE-1300」)、2,2-雙(4-(甲基丙烯醯氧基聚乙氧基)苯基)丙烷(共榮社化學股份有限公司製造的「BP-2EM」(EO基:2.6(平均值)))等。Regarding commercially available bisphenol-type (meth)acrylate compounds, for example, 2,2-bis(4-(methacryloxydiethoxy)phenyl)propane (Shinakamura Chemical "BPE-200" manufactured by Industrial Co., Ltd.), 2,2-bis(4-(methacrylacetoxypentethoxy)phenyl)propane ("BPE-200 manufactured by Shin Nakamura Chemical Industry Co., Ltd. 500", or "FA-321M" manufactured by Hitachi Chemical Co., Ltd.), 2,2-bis(4-(methacryloxypentadecyloxy)phenyl)propane (Xinzhongcun Chemical Industry Co., Ltd. "BPE-1300" manufactured by the company), 2,2-bis(4-(methacryloxypolyethoxy)phenyl)propane ("BP-2EM" manufactured by Kyoeisha Chemical Co., Ltd. ( EO base: 2.6 (average))) etc.
自使耐化學品性進一步提高的立場考慮,雙酚型(甲基)丙烯酸酯化合物的含量可以相對於(A)成分及(B)成分的固體成分總量而言為1質量%~50質量%、1質量%~45質量%、1質量%~40質量%、或3質量%~25質量%。From the standpoint of further improving chemical resistance, the content of the bisphenol-type (meth)acrylate compound can be 1% by mass to 50% by mass relative to the total solid content of the components (A) and (B). %, 1% by mass to 45% by mass, 1% by mass to 40% by mass, or 3% by mass to 25% by mass.
而且,自使耐化學品性進一步提高的立場考慮,雙酚型(甲基)丙烯酸酯化合物的含量可以相對於(B)成分的固體成分總量而言為30質量%~99質量%、50質量%~97質量%、或60質量%~95質量%。Moreover, from the standpoint of further improving the chemical resistance, the content of the bisphenol-type (meth)acrylate compound can be 30% by mass to 99% by mass relative to the total solid content of the (B) component. % By mass to 97% by mass, or 60% by mass to 95% by mass.
而且,自使解析度更良好的立場考慮,EO基及PO基的總數為1~7的通式(III)所表示的化合物的含量可以相對於(A)成分及(B)成分的固體成分總量而言為1質量%~30質量%、2質量%~28質量%、或3質量%~25質量%。Furthermore, from the standpoint of making the resolution better, the content of the compound represented by the general formula (III) having the total number of EO groups and PO groups of 1 to 7 can be relative to the solid content of the components (A) and (B) The total amount is 1% by mass to 30% by mass, 2% by mass to 28% by mass, or 3% by mass to 25% by mass.
而且,自使基板對於凹凸的追從性進一步提高的立場考慮,亦可含有使多元醇與α,β-不飽和羧酸反應而所得的化合物。作為此種化合物,例如可使用在分子內具有EO基及PO基此兩者的聚烯烴二醇二(甲基)丙烯酸酯。使多元醇與α,β-不飽和羧酸反應而所得的化合物的含量可以相對於(A)成分及(B)成分的固體成分總量而言為1質量%~10質量%、或3質量%~7質量%。而且,使多元醇與α,β-不飽和羧酸反應而所得的化合物的含量可以相對於(B)成分的固體成分總量而言為1質量%~30質量%、或3質量%~20質量%。Furthermore, from the standpoint of further improving the substrate's conformability to irregularities, a compound obtained by reacting a polyol with an α,β-unsaturated carboxylic acid may be contained. As such a compound, for example, a polyolefin diol di(meth)acrylate having both an EO group and a PO group in the molecule can be used. The content of the compound obtained by reacting a polyol with α,β-unsaturated carboxylic acid may be 1% by mass to 10% by mass, or 3% by mass relative to the total solid content of the components (A) and (B). % ~ 7 mass%. Furthermore, the content of the compound obtained by reacting a polyol with an α,β-unsaturated carboxylic acid may be 1% by mass to 30% by mass, or 3% by mass to 20 relative to the total solid content of the component (B) quality%.
另外,在具有EO基及PO基此兩者的聚烯烴二醇二(甲基)丙烯酸酯的分子內,EO基及PO基可分別連續而嵌段地存在,亦可無規地存在。而且,PO基可為氧基-正伸丙基或氧基異伸丙基的任意者。另外,在(聚)氧基異伸丙基中,可為伸丙基的二級碳鍵結於氧原子上,亦可為一級碳鍵結於氧原子上。In addition, in the molecule of the polyolefin diol di(meth)acrylate having both the EO group and the PO group, the EO group and the PO group may be present continuously and in blocks, or may be present randomly. Moreover, the PO group may be any of oxy-n-propylene or oxyisopropylene. In addition, in the (poly)oxyisopropylene group, the secondary carbon of the propylene group may be bonded to the oxygen atom, or the primary carbon may be bonded to the oxygen atom.
關於可作為具有EO基及PO基此兩者的聚烯烴二醇二(甲基)丙烯酸酯而商業性獲得者,例如可列舉具有EO基:6(平均值)及PO基:12(平均值)的聚烯烴二醇二(甲基)丙烯酸酯(日立化成股份有限公司製造的「FA-023M」、「FA-024M」)等。Commercially available polyolefin diol di(meth)acrylates having both EO groups and PO groups include, for example, EO groups: 6 (average) and PO groups: 12 (average ) Polyolefin diol di(meth)acrylate ("FA-023M", "FA-024M" manufactured by Hitachi Chemical Co., Ltd.), etc.
(B)成分的含量可以相對於(A)成分及(B)成分的固體成分總量100質量份而言為20質量份~70質量份、25質量份~60質量份、或30質量份~50質量份。若(B)成分的含量為該範圍內,則除了感光性樹脂組成物的解析度、密接性、及抗蝕劑基腳產生的抑制性以外,光感度及塗膜性亦變得更良好。(B) The content of the component may be 20 parts by mass to 70 parts by mass, 25 parts by mass to 60 parts by mass, or 30 parts by mass relative to 100 parts by mass of the total solid content of the components (A) and (B). 50 parts by mass. When the content of the component (B) is within this range, in addition to the resolution, adhesiveness, and suppression of resist footing of the photosensitive resin composition, the photosensitivity and coating properties become better.
[(C)光聚合起始劑] 本實施方式的感光性樹脂組成物含有至少一種(C)光聚合起始劑(以下亦稱為「(C)成分」)。(C)成分若為可使(B)成分聚合者,則並無特別限制,可自通常使用的光聚合起始劑中適宜選擇。[(C) Photopolymerization Initiator] The photosensitive resin composition of this embodiment contains at least one (C) photopolymerization initiator (hereinafter also referred to as "(C) component"). The component (C) is not particularly limited as long as it can polymerize the component (B), and can be appropriately selected from photopolymerization initiators generally used.
作為(C)成分,例如可列舉2-苄基-2-二甲基胺基-1-(4-嗎啉基苯基)-丁酮-1、2-甲基-1-[4-(甲硫基)苯基]-2-嗎啉基-丙酮-1等芳香族酮,烷基蒽醌等醌類,安息香烷基醚等安息香醚化合物,安息香、烷基安息香等安息香化合物,苄基二甲基縮酮等苄基衍生物,2-(鄰氯苯基)-4,5-二苯基咪唑二聚物、2-(鄰氟苯基)-4,5-二苯基咪唑二聚物等2,4,5-三芳基咪唑二聚物,9-苯基吖啶、1,7-(9,9'-吖啶基)庚烷等吖啶衍生物等。該些可單獨使用一種或者組合使用兩種以上。Examples of the component (C) include 2-benzyl-2-dimethylamino-1-(4-morpholinylphenyl)-butanone-1 and 2-methyl-1-[4-( Methylthio)phenyl]-2-morpholinyl-acetone-1 and other aromatic ketones, alkyl anthraquinones and other quinones, benzoin alkyl ethers and other benzoin ether compounds, benzoin, alkyl benzoin and other benzoin compounds, benzyl Benzyl derivatives such as dimethyl ketal, 2-(o-chlorophenyl)-4,5-diphenylimidazole dimer, 2-(o-fluorophenyl)-4,5-diphenylimidazole di 2,4,5-triarylimidazole dimers such as polymers, and acridine derivatives such as 9-phenylacridine and 1,7-(9,9'-acridinyl)heptane. These may be used alone or in combination of two or more.
該些中,自使解析性進一步提高的立場考慮,可含有2,4,5-三芳基咪唑二聚物。作為所述2,4,5-三芳基咪唑二聚物,例如可列舉2-(鄰氯苯基)-4,5-二苯基咪唑二聚物、2-(鄰氯苯基)-4,5-雙-(間甲氧基苯基)咪唑二聚物、2-(對甲氧基苯基)-4,5-二苯基咪唑二聚物等。該些中,可含有2-(鄰氯苯基)-4,5-二苯基咪唑二聚物。Among these, 2,4,5-triarylimidazole dimer may be contained from the standpoint of further improving the resolution. Examples of the 2,4,5-triarylimidazole dimer include 2-(o-chlorophenyl)-4,5-diphenylimidazole dimer and 2-(o-chlorophenyl)-4. ,5-bis-(m-methoxyphenyl)imidazole dimer, 2-(p-methoxyphenyl)-4,5-diphenylimidazole dimer, etc. These may contain 2-(o-chlorophenyl)-4,5-diphenylimidazole dimer.
作為2,4,5-三芳基咪唑二聚物,例如2,2'-雙(2-氯苯基)-4,4',5,5'-四苯基雙咪唑可作為B-CIM(保土谷化學工業股份有限公司製造、產品名)而商業性獲得。As 2,4,5-triarylimidazole dimer, for example, 2,2'-bis(2-chlorophenyl)-4,4',5,5'-tetraphenylbisimidazole can be used as B-CIM ( It is manufactured by Baotugu Chemical Industry Co., Ltd. and its product name is obtained commercially.
自使光感度及密接性進一步提高、進而可進一步抑制(C)成分的光吸收性的觀點考慮,(C)成分可含有2,4,5-三芳基咪唑二聚物的至少一種,亦可含有2-(2-氯苯基)-4,5-二苯基咪唑二聚物。另外,關於2,4,5-三芳基咪唑二聚物,其結構可對稱亦可不對稱。The component (C) may contain at least one 2,4,5-triarylimidazole dimer from the viewpoint of further improving the photosensitivity and adhesion and further suppressing the light absorption of the component (C), or Contains 2-(2-chlorophenyl)-4,5-diphenylimidazole dimer. In addition, the structure of the 2,4,5-triarylimidazole dimer may be symmetrical or asymmetrical.
(C)成分的含量可以相對於(A)成分及(B)成分的固體成分總量100質量份而言為0.01質量份~30質量份、0.1質量份~10質量份、1質量份~7質量份、1質量份~6質量份、1質量份~5質量份、或2質量份~5質量份。若(C)成分的含量為0.01質量份以上,則存在光感度、解析性及密接性提高的傾向;若為30質量份以下,則存在抗蝕劑圖案的形狀更優異的傾向。(C) The content of the component may be 0.01 to 30 parts by mass, 0.1 to 10 parts by mass, and 1 to 7 parts by mass relative to 100 parts by mass of the total solid content of the components (A) and (B). Part by mass, 1 part by mass to 6 parts by mass, 1 part by mass to 5 parts by mass, or 2 parts by mass to 5 parts by mass. If the content of the component (C) is 0.01 parts by mass or more, the light sensitivity, resolution, and adhesion tend to improve; if it is 30 parts by mass or less, the shape of the resist pattern tends to be more excellent.
[(D)光增感劑] 本實施方式的感光性樹脂組成物含有(D)光增感劑(以下亦稱為「(D)成分」)。藉由含有(D)成分,可有效地利用曝光中所使用的光化射線的吸收波長。[(D) Photosensitizer] The photosensitive resin composition of the present embodiment contains (D) photosensitizer (hereinafter also referred to as "(D) component"). By containing the component (D), the absorption wavelength of the actinic rays used in the exposure can be effectively used.
作為(D)成分,例如可列舉吡唑啉類、二烷基胺基二苯甲酮類、蒽類、香豆素類、氧雜蒽酮類、噁唑類、苯并噁唑類、噻唑類、苯并噻唑類、三唑類、芪類、三嗪類、噻吩類、萘二甲醯亞胺類、三芳基胺類等。該些可單獨使用一種或組合使用兩種以上。Examples of the component (D) include pyrazolines, dialkylaminobenzophenones, anthracenes, coumarins, xanthones, oxazoles, benzoxazoles, and thiazoles. , Benzothiazoles, triazoles, stilbene, triazines, thiophenes, naphthalimides, triarylamines, etc. These can be used alone or in combination of two or more.
(D)成分的含量可以相對於(A)成分及(B)成分的固體成分總量100質量份而言為1.0質量份以下、0.5質量份以下、0.15質量份以下、0.12質量份以下、或0.1質量份以下。若(D)成分的含量為相對於(A)成分及(B)成分的固體成分總量100質量份而言為1.0質量份以下,則存在如下傾向:可進一步抑制抗蝕劑圖案的形狀惡化及抗蝕劑基腳的產生,使解析度更良好。而且,自更容易獲得高光感度及高解析性的立場考慮,(D)成分的含量的下限值可以相對於(A)成分及(B)成分的固體成分總量100質量份而言為0.01質量份以上。(D) The content of the component may be 1.0 parts by mass or less, 0.5 parts by mass or less, 0.15 parts by mass or less, 0.12 parts by mass or less relative to 100 parts by mass of the total solid content of the components (A) and (B) 0.1 parts by mass or less. If the content of the component (D) is 1.0 part by mass or less relative to 100 parts by mass of the total solid content of the component (A) and the component (B), there is a tendency that the shape deterioration of the resist pattern can be further suppressed And the generation of resist footing makes the resolution better. In addition, from the standpoint that high light sensitivity and high resolution are more easily obtained, the lower limit of the content of the (D) component can be 0.01 relative to 100 parts by mass of the total solid content of the (A) component and (B) component Above mass.
[(E)聚合抑制劑] 本實施方式的感光性樹脂組成物含有(E)聚合抑制劑(以下亦稱為「(E)成分」)。藉由含有(E)成分,可將用於使感光性樹脂組成物光硬化所需的曝光量調整為最適於藉由投影曝光機進行曝光的曝光量。[(E) Polymerization Inhibitor] The photosensitive resin composition of this embodiment contains (E) a polymerization inhibitor (hereinafter also referred to as "(E) component"). By containing the (E) component, the exposure required for photocuring the photosensitive resin composition can be adjusted to the exposure most suitable for exposure by a projection exposure machine.
自使解析性進一步提高的立場考慮,(E)成分亦可含有下述通式(I)所表示的化合物。 [化3] From the standpoint of further improving the resolution, the component (E) may contain a compound represented by the following general formula (I). [Chemical 3]
通式(I)中,R5 表示鹵素原子、氫原子、碳數1~20的烷基、碳數3~10的環烷基、胺基、芳基、巰基、碳數1~10的烷基巰基、烷基的碳數為1~10的羧基烷基、碳數1~20的烷氧基或雜環基,m表示以使m+n成為6以下的方式選擇的2以上的整數,n表示以使m+n成為6以下的方式選擇的0以上的整數,在n為2以上的整數的情況下,R5 可分別相同亦可不同。另外,芳基亦可經碳數1~20的烷基取代。In the general formula (I), R 5 represents a halogen atom, a hydrogen atom, a C 1-20 alkyl group, a C 3-10 cycloalkyl group, an amine group, an aryl group, a mercapto group, and a C 1-10 alkyl group A mercapto group, an alkyl group, a carboxyalkyl group having 1 to 10 carbon atoms, an alkoxy group or a heterocyclic group having 1 to 20 carbon atoms, m represents an integer of 2 or more selected so that m+n becomes 6 or less, n represents an integer of 0 or more selected so that m+n becomes 6 or less. When n is an integer of 2 or more, R 5 may be the same or different. In addition, the aryl group may be substituted with an alkyl group having 1 to 20 carbon atoms.
自使與(A)成分的相溶性進一步提高的立場考慮,R5 可為氫原子、或碳數1~20的烷基。作為R5 所表示的碳數1~20的烷基,亦可為碳數1~4的烷基。自使解析性進一步提高的立場考慮,m可為2或3,亦可為2。From the standpoint of further improving the compatibility with the component (A), R 5 may be a hydrogen atom or an alkyl group having 1 to 20 carbon atoms. The alkyl group having 1 to 20 carbon atoms represented by R 5 may be an alkyl group having 1 to 4 carbon atoms. From the standpoint of further improving the resolution, m may be 2 or 3, or 2.
作為所述通式(I)所表示的化合物,例如可列舉兒茶酚,間苯二酚(雷瑣辛),1,4-對苯二酚,2-甲基兒茶酚、3-甲基兒茶酚、4-甲基兒茶酚、2-乙基兒茶酚、3-乙基兒茶酚、4-乙基兒茶酚、2-丙基兒茶酚、3-丙基兒茶酚、4-丙基兒茶酚、2-正丁基兒茶酚、3-正丁基兒茶酚、4-正丁基兒茶酚、2-第三丁基兒茶酚、3-第三丁基兒茶酚、4-第三丁基兒茶酚、3,5-二-第三丁基兒茶酚等烷基兒茶酚,2-甲基間苯二酚、4-甲基間苯二酚、5-甲基間苯二酚(苔黑酚)、2-乙基間苯二酚、4-乙基間苯二酚、2-丙基間苯二酚、4-丙基間苯二酚、2-正丁基間苯二酚、4-正丁基間苯二酚、2-第三丁基間苯二酚、4-第三丁基間苯二酚等烷基間苯二酚,甲基對苯二酚、乙基對苯二酚、丙基對苯二酚、第三丁基對苯二酚、2,5-二-第三丁基對苯二酚等烷基對苯二酚,五倍子酚,均苯三酚等。該些可單獨使用一種或組合使用兩種以上。Examples of the compound represented by the general formula (I) include catechol, resorcinol (resorcinol), 1,4-hydroquinone, 2-methylcatechol and 3-methyl Catechol, 4-methylcatechol, 2-ethylcatechol, 3-ethylcatechol, 4-ethylcatechol, 2-propylcatechol, 3-propylcatechol Catechol, 4-propylcatechol, 2-n-butylcatechol, 3-n-butylcatechol, 4-n-butylcatechol, 2-tert-butylcatechol, 3- Alkyl catechols such as tertiary butyl catechol, 4-tertiary butyl catechol, 3,5-di-tertiary butyl catechol, 2-methyl resorcinol, 4-methyl Resorcinol, 5-methylresorcinol (orcinol), 2-ethylresorcinol, 4-ethylresorcinol, 2-propylresorcinol, 4-propanol Alkyl groups such as resorcinol, 2-n-butylresorcinol, 4-n-butylresorcinol, 2-tert-butylresorcinol, 4-tert-butylresorcinol Resorcinol, methylhydroquinone, ethylhydroquinone, propylhydroquinone, tert-butylhydroquinone, 2,5-di-tert-butylhydroquinone, etc. Alkyl hydroquinone, gallic acid, pyrogallol, etc. These can be used alone or in combination of two or more.
所述通式(I)所表示的化合物中,自使解析性進一步提高的立場考慮,可為烷基兒茶酚。The compound represented by the general formula (I) may be an alkyl catechol from the standpoint of further improving the resolution.
(E)成分的含量相對於(A)成分及(B)成分的固體成分總量100質量份而言為0.03質量份~0.3質量份,亦可為0.03質量份~0.2質量份、0.05質量份~0.15質量份、或0.05質量份~0.1質量份。藉由將(E)成分的含量設為0.3質量份以下,可使曝光時間變短,可對量產的效率提高做出貢獻;藉由設為0.03質量份以上,可充分地進行曝光部的光反應,藉由反應率提高而可抑制抗蝕劑膨潤性,使解析度更良好。(E) The content of the component is 0.03 parts by mass to 0.3 parts by mass relative to 100 parts by mass of the total solid content of the components (A) and (B), and may also be 0.03 parts by mass to 0.2 parts by mass, 0.05 parts by mass ~0.15 parts by mass, or 0.05 parts by mass to 0.1 parts by mass. By setting the content of the (E) component to 0.3 parts by mass or less, the exposure time can be shortened, which can contribute to the improvement of mass production efficiency; by setting it to 0.03 parts by mass or more, the exposure part can be sufficiently conducted The photoreaction can suppress the swelling of the resist by increasing the reaction rate and make the resolution better.
而且,(E)成分的含量可以相對於(A)成分的固體成分100質量份而言為0.05質量份~0.4質量份、0.05質量份~0.2質量份、或0.05質量份~0.1質量份。在(E)成分的含量相對於(A)成分而言為0.05質量份以上的情況下,存在可使感光性樹脂組成物的熱穩定性提高的傾向;在0.4質量份以下的情況下,存在可抑制感光性樹脂組成物的黃色化的傾向。Furthermore, the content of the component (E) may be 0.05 parts by mass to 0.4 parts by mass, 0.05 parts by mass to 0.2 parts by mass, or 0.05 parts by mass to 0.1 parts by mass relative to 100 parts by mass of the solid content of the component (A). When the content of the (E) component is 0.05 parts by mass or more relative to the (A) component, there is a tendency that the thermal stability of the photosensitive resin composition can be improved; in the case of 0.4 parts by mass or less, there is The tendency of the photosensitive resin composition to turn yellow can be suppressed.
[其他成分] 本實施方式的感光性樹脂組成物亦可視需要相對於(A)成分及(B)成分的固體成分總量100質量份而言各自含有0.01質量份~20質量份的如下成分:孔雀綠、維多利亞純藍、亮綠、甲基紫等染料,三溴苯基碸、隱色結晶紫、二苯基胺、苄胺、三苯基胺、二乙基苯胺、鄰氯苯胺、第三丁基兒茶酚等光顯色劑,熱顯色抑制劑,對甲苯磺醯胺等塑化劑,顏料,填充劑,消泡劑,阻燃劑,密接性賦予劑,調平劑,剝離促進劑,抗氧化劑,香料,顯像劑,熱交聯劑等添加劑。該些添加劑可單獨使用一種或組合使用兩種以上。[Other components] The photosensitive resin composition of the present embodiment may also contain the following components in an amount of 0.01 to 20 parts by mass relative to 100 parts by mass of the total solid content of the components (A) and (B), if necessary: Malachite green, Victoria pure blue, bright green, methyl violet and other dyes, tribromophenyl ash, leuco crystal violet, diphenylamine, benzylamine, triphenylamine, diethylaniline, o-chloroaniline, the first Photochromic agents such as tributylcatechol, thermal color development inhibitors, p-toluenesulfonamide and other plasticizers, pigments, fillers, defoamers, flame retardants, adhesion-imparting agents, leveling agents, Additives such as peeling accelerators, antioxidants, perfumes, developers, thermal cross-linking agents. These additives may be used alone or in combination of two or more.
而且,本實施方式的感光性樹脂組成物可視需要而含有有機溶劑的至少一種。作為所述有機溶劑,可並無特別限制地使用通常所使用的有機溶劑。具體而言,例如可列舉甲醇、乙醇、丙酮、甲基乙基酮、甲基溶纖劑、乙基溶纖劑、甲苯、N,N-二甲基甲醯胺、丙二醇單甲醚等有機溶劑或該些的混合溶劑。該些可單獨使用一種或組合使用兩種以上。Furthermore, the photosensitive resin composition of the present embodiment may contain at least one organic solvent if necessary. As the organic solvent, a commonly used organic solvent can be used without particular limitation. Specific examples include organic solvents such as methanol, ethanol, acetone, methyl ethyl ketone, methyl cellosolve, ethyl cellosolve, toluene, N,N-dimethylformamide, and propylene glycol monomethyl ether. Solvent or a mixed solvent of these. These can be used alone or in combination of two or more.
本實施方式的感光性樹脂組成物例如可作為將(A)成分、(B)成分、(C)成分、(D)成分、(E)成分溶解於所述有機溶劑中而製成固體成分為30質量%~60質量%的溶液(以下亦稱為「塗佈液」)而使用。另外,於本說明書中,所謂「固體成分」是指水分及後述的有機溶劑等揮發的物質以外的組成物中的成分。亦即,固體成分亦包含於25℃附近的室溫下為液狀、飴糖狀及蠟狀者,並不表示必須為固體。此處,所謂「揮發的物質」是指沸點為大氣壓下155℃以下的物質。The photosensitive resin composition of this embodiment can be prepared as a solid component by dissolving (A) component, (B) component, (C) component, (D) component, and (E) component in the organic solvent, for example A 30% by mass to 60% by mass solution (hereinafter also referred to as "coating liquid") is used. In addition, in this specification, the "solid content" refers to the components in the composition other than volatile substances such as moisture and organic solvents described later. That is, the solid component is also included in a liquid state, a caramel state, and a wax state at room temperature near 25°C, and does not mean that it must be a solid. Here, the "volatile substance" refers to a substance having a boiling point of 155°C or lower at atmospheric pressure.
所述塗佈液例如可如下所述地在感光性樹脂層的形成中使用。例如將所述塗佈液塗佈於後述的聚合物膜或金屬板等支撐體的表面上,並使其乾燥,藉此可在支撐體上形成源自感光性樹脂組成物的感光性樹脂層。The coating liquid can be used for forming a photosensitive resin layer as described below, for example. For example, by coating the coating liquid on the surface of a support such as a polymer film or a metal plate described later and drying it, a photosensitive resin layer derived from a photosensitive resin composition can be formed on the support .
作為金屬板,例如可列舉包含銅、銅系合金、鎳、鉻、鐵、或不鏽鋼等鐵系合金的金屬板,自使耐久性進一步提高的立場考慮,可為包含銅、銅系合金、或鐵系合金的金屬板。Examples of the metal plate include a metal plate containing an iron-based alloy such as copper, copper-based alloy, nickel, chromium, iron, or stainless steel. From the standpoint of further improving durability, it may include copper, a copper-based alloy, or Metal plate of iron alloy.
<感光性元件> 本實施方式的感光性元件是有關於包含支撐體、使用所述感光性樹脂組成物而形成在所述支撐體上的感光性樹脂層的感光性元件。本實施方式的感光性元件1是如在圖1中表示其一例的示意剖面圖般,包含支撐體2、形成在支撐體2上的源自所述感光性樹脂組成物的感光性樹脂層3,且包含視需要而設置的保護層4等其他層而構成。<Photosensitive element> The photosensitive element of this embodiment relates to a photosensitive element including a support and a photosensitive resin layer formed on the support using the photosensitive resin composition. The photosensitive element 1 of the present embodiment is a schematic cross-sectional view showing an example thereof in FIG. 1, and includes a
[支撐體] 作為所述支撐體,例如可使用聚丙烯、聚乙烯、及聚對苯二甲酸乙二酯等聚酯等的具有耐熱性及耐溶劑性的聚合物膜。[Support] As the support, for example, a polymer film having heat resistance and solvent resistance such as polyester such as polypropylene, polyethylene, and polyethylene terephthalate can be used.
所述支撐體的厚度可以是1 μm~100 μm、1 μm~50 μm、或1 μm~30 μm。藉由支撐體的厚度為1 μm以上,存在可抑制在剝離支撐體時支撐體破裂的傾向。而且,藉由支撐體的厚度為100 μm以下,存在抑制解析性降低的傾向。The thickness of the support may be 1 μm to 100 μm, 1 μm to 50 μm, or 1 μm to 30 μm. When the thickness of the support is 1 μm or more, there is a tendency to prevent the support from breaking when the support is peeled. Moreover, when the thickness of the support is 100 μm or less, there is a tendency to suppress the decrease in resolution.
[保護層] 所述感光性元件1亦可視需要進一步包含保護層4,所述保護層4包覆感光性樹脂層3的與支撐體2對向的面的相反側的表面。[Protective Layer] The photosensitive element 1 may further include a protective layer 4 as necessary, and the protective layer 4 covers the surface of the
作為所述保護層,可為對於感光性樹脂層的黏著力小於支撐體對於感光性樹脂層的黏著力者,而且亦可為低魚眼狀白點的膜。The protective layer may be a film having a low fisheye-like white spot, and has a lower adhesion to the photosensitive resin layer than the support to the photosensitive resin layer.
此處,所謂「魚眼狀白點」是表示在對構成保護層的材料進行熱熔融,藉由進行混練、擠出、雙軸延伸的澆鑄法等而製造膜時,摻入至膜中的材料的異物、未溶解物、氧化劣化物等。亦即,所謂「低魚眼狀白點」是表示膜中的所述異物等少。Here, the "fisheye-shaped white dot" means that when the film constituting the protective layer is thermally melted and the film is produced by kneading, extrusion, biaxial stretching casting method, etc., it is incorporated into the film Foreign material, undissolved material, oxidative degradation material, etc. That is, the "low fisheye-like white spot" means that there are few foreign substances in the film.
具體而言,作為保護層,可使用聚丙烯、聚乙烯、聚對苯二甲酸乙二酯等聚酯等的具有耐熱性及耐溶劑性的聚合物膜。作為市售者,例如可列舉王子製紙股份有限公司製造的ALPHAN MA-410、E-200C,信越膜股份有限公司製造的聚丙烯膜,帝人股份有限公司製造的PS-25等PS系列等聚對苯二甲酸乙二酯膜。另外,保護層亦可與所述支撐體相同。Specifically, as the protective layer, a polymer film having heat resistance and solvent resistance such as polyester such as polypropylene, polyethylene, and polyethylene terephthalate can be used. Examples of commercially available products include ALPHAN MA-410 and E-200C manufactured by Oji Paper Co., Ltd., polypropylene films manufactured by Shin-Etsu Film Co., Ltd., and PS series such as PS-25 manufactured by Teijin Co., Ltd. Ethylene phthalate film. In addition, the protective layer may be the same as the support.
保護層的厚度可以是1 μm~100 μm、5 μm~50 μm、5 μm~30 μm、或15 μm~30 μm。藉由保護層的厚度為1 μm以上,存在於一面剝去保護層,一面將感光性樹脂層及支撐體層壓於基板上時,可抑制保護層破裂的傾向。而且,於容易獲得經濟上的好處的方面而言,可以是100 μm以下。The thickness of the protective layer may be 1 μm to 100 μm, 5 μm to 50 μm, 5 μm to 30 μm, or 15 μm to 30 μm. When the thickness of the protective layer is 1 μm or more, when the protective layer is peeled off while the photosensitive resin layer and the support are laminated on the substrate, the tendency of the protective layer to crack can be suppressed. Furthermore, in terms of easy economic benefits, it may be 100 μm or less.
[感光性元件的製造方法] 本實施方式的感光性元件例如可如下所述地製造。可藉由包含如下步驟的製造方法而製造:準備將所述感光性樹脂組成物溶解於所述有機溶劑中的塗佈液的步驟;將所述塗佈液塗佈於支撐體上而形成塗佈層的步驟;使所述塗佈層乾燥而形成感光性樹脂層的步驟。[Manufacturing method of photosensitive element] The photosensitive element of this embodiment can be manufactured as follows, for example. It can be manufactured by a manufacturing method including the steps of: preparing a coating solution in which the photosensitive resin composition is dissolved in the organic solvent; applying the coating solution on a support to form a coating The step of the cloth layer; the step of drying the coating layer to form a photosensitive resin layer.
所述塗佈液於支撐體上的塗佈例如可藉由使用輥塗、缺角輪塗佈、凹版塗佈、氣刀塗佈、模塗、棒塗、噴塗等的公知方法而進行。The coating liquid can be applied to the support by, for example, known methods such as roll coating, notch coating, gravure coating, air knife coating, die coating, bar coating, and spray coating.
而且,所述塗佈層的乾燥若可自塗佈層除去有機溶劑的至少一部分,則並無特別限制,可於70℃~150℃下進行5分鐘~30分鐘的乾燥。自抑制在其後的步驟中有機溶劑擴散的方面考慮,乾燥後在感光性樹脂層中的殘存有機溶劑量以除有機溶劑以外的感光性樹脂組成物的總量為基準而言,可以是2質量%以下。In addition, the drying of the coating layer is not particularly limited as long as at least a part of the organic solvent can be removed from the coating layer, and it can be dried at 70°C to 150°C for 5 to 30 minutes. From the viewpoint of suppressing the diffusion of the organic solvent in the subsequent steps, the amount of residual organic solvent in the photosensitive resin layer after drying can be 2 based on the total amount of the photosensitive resin composition other than the organic solvent Mass% or less.
感光性元件中的感光性樹脂層的厚度可根據用途而適宜選擇,以乾燥後的厚度計而言可以是1 μm~200 μm、5 μm~100 μm、或10 μm~50 μm。藉由感光性樹脂層的厚度為1 μm以上,存在工業性塗佈變容易,生產性提高的傾向。而且,在感光性樹脂層的厚度為200 μm以下的情況下存在如下傾向:光感度高,抗蝕劑底部的光硬化性優異,因此可形成解析度及縱橫比優異的抗蝕劑圖案。The thickness of the photosensitive resin layer in the photosensitive element can be appropriately selected according to the application, and it can be 1 μm to 200 μm, 5 μm to 100 μm, or 10 μm to 50 μm in terms of the thickness after drying. When the thickness of the photosensitive resin layer is 1 μm or more, industrial coating tends to be easy and productivity tends to be improved. In addition, when the thickness of the photosensitive resin layer is 200 μm or less, there is a tendency that the light sensitivity is high and the photocurability of the bottom of the resist is excellent, so that a resist pattern with excellent resolution and aspect ratio can be formed.
特別是在使用投影曝光方式而對感光性樹脂層進行曝光,形成抗蝕劑圖案的情況下,自解析度更優異的觀點考慮,感光性元件中的感光性樹脂層的厚度以乾燥後的厚度計而言可以是不足30 μm,亦可為25 μm以下。作為感光性樹脂層的厚度的下限值,若可形成感光性樹脂層,則並無特別限制,自使產出量進一步提高的觀點考慮,以乾燥後的厚度計而言可以是1 μm以上、5 μm以上、或7 μm以上。In particular, when a photosensitive resin layer is exposed using a projection exposure method to form a resist pattern, the thickness of the photosensitive resin layer in the photosensitive element is the thickness after drying from the viewpoint of more excellent resolution It may be less than 30 μm or less than 25 μm. The lower limit of the thickness of the photosensitive resin layer is not particularly limited as long as the photosensitive resin layer can be formed. From the viewpoint of further increasing the output, the thickness after drying may be 1 μm or more. , 5 μm or more, or 7 μm or more.
本實施方式的感光性元件亦可視需要進一步包含緩衝層、黏著層、光吸收層、或阻氣層等中間層等。The photosensitive element of this embodiment may further include an intermediate layer such as a buffer layer, an adhesive layer, a light-absorbing layer, or a gas barrier layer, if necessary.
本實施方式的感光性元件的形態並無特別限制。例如可為片材狀,亦可為於卷芯上捲繞為卷狀的形狀。在捲繞為卷狀的情況下,可以支撐體成為外側的方式進行捲繞。作為卷芯,例如可列舉聚乙烯樹脂、聚丙烯樹脂、聚苯乙烯樹脂、聚氯乙烯樹脂、或ABS(丙烯腈-丁二烯-苯乙烯共聚物)等塑膠。The form of the photosensitive element of this embodiment is not particularly limited. For example, it may be in the form of a sheet or may be wound in a roll shape on the core. In the case of winding in a roll shape, the support may be wound so as to be outside. Examples of the winding core include plastics such as polyethylene resin, polypropylene resin, polystyrene resin, polyvinyl chloride resin, and ABS (acrylonitrile-butadiene-styrene copolymer).
於如上所述而所得的卷狀的感光性元件卷的端面,自保護端面的立場考慮,可設置端面分隔件;而且自耐邊緣熔合的立場考慮,可設置防濕端面分隔件。作為捆包方法,可包於透濕性小的黑色片材中而進行包裝。The end face of the roll-shaped photosensitive element roll obtained as described above can be provided with an end face separator from the standpoint of protecting the end face; and a moisture-proof end face separator can be provided from the standpoint of resistance to edge fusion. As a packaging method, it can be packaged in a black sheet with low moisture permeability.
本實施方式的感光性元件例如可於後述的抗蝕劑圖案的形成方法中適宜地使用。The photosensitive element of this embodiment can be suitably used in, for example, a method of forming a resist pattern described later.
<抗蝕劑圖案的形成方法> 本實施方式的抗蝕劑圖案的形成方法包含:(i)使用所述感光性樹脂組成物或所述感光性元件而在基板上形成感光性樹脂層的步驟(以下亦稱為「(i)感光性樹脂層形成步驟」);(ii)使用投影出光罩影像的光化射線,經由透鏡對所述感光性樹脂層進行曝光的步驟(以下亦稱為「(ii)曝光步驟」);(iii)藉由顯影將所述感光性樹脂層的未曝光部自基板上除去的步驟(以下亦稱為「(iii)顯影步驟」),亦可視需要包含其他步驟。<Method of Forming Resist Pattern> The method of forming a resist pattern of this embodiment includes: (i) a step of forming a photosensitive resin layer on a substrate using the photosensitive resin composition or the photosensitive element (Hereinafter also referred to as "(i) photosensitive resin layer forming step"); (ii) a step of exposing the photosensitive resin layer through a lens using actinic rays projecting a photomask image (hereinafter also referred to as " (Ii) Exposure step"); (iii) The step of removing the unexposed portion of the photosensitive resin layer from the substrate by development (hereinafter also referred to as "(iii) development step"), and may also include other step.
(i)感光性樹脂層形成步驟 於感光性樹脂層形成步驟中,使用所述感光性樹脂組成物或所述感光性元件而於基板上形成感光性樹脂層。作為所述基板,並無特別限制,通常使用包含絕緣層、形成在絕緣層上的導體層的電路形成用基板,或合金基材等的下墊板(引線框架用基材)等。(I) Photosensitive resin layer forming step In the photosensitive resin layer forming step, the photosensitive resin layer or the photosensitive element is used to form a photosensitive resin layer on a substrate. The substrate is not particularly limited. Generally, a circuit-forming substrate including an insulating layer and a conductive layer formed on the insulating layer, or an underlying substrate (substrate for lead frame) such as an alloy substrate is used.
作為於基板上形成感光性樹脂層的方法,例如可列舉在塗佈包含所述感光性樹脂組成物的塗佈液後使其乾燥的方法、及使用所述感光性元件的方法等。在使用具有保護層的感光性元件的情況下,可在將保護層除去後,一面對感光性元件的感光性樹脂層進行加熱一面壓接於基板上,藉此可於基板上形成感光性樹脂層。藉此獲得順次包含基板、感光性樹脂層、支撐體的積層體。As a method of forming a photosensitive resin layer on a substrate, for example, a method of applying a coating liquid containing the photosensitive resin composition and then drying it, a method of using the photosensitive element, and the like are mentioned. In the case of using a photosensitive element having a protective layer, after removing the protective layer, the photosensitive resin layer of the photosensitive element can be heated while being pressure-bonded to the substrate, thereby forming the sensitivity on the substrate Resin layer. Thereby, a laminate including the substrate, the photosensitive resin layer, and the support in this order is obtained.
在使用感光性元件而進行感光性樹脂層形成步驟的情況下,自密接性及追從性的立場考慮,可在減壓下進行。壓接時的加熱可在70℃~130℃的溫度下進行,壓接可在0.1 MPa~1.0 MPa(1 kgf/cm2 ~10 kgf/cm2 )的壓力下進行,該些條件可根據需要而適宜選擇。另外,若將感光性元件的感光性樹脂層加熱至70℃~130℃,則無需預先對基板進行預熱處理,但為了使密接性及追從性進一步提高,亦可進行基板的預熱處理。When the photosensitive resin layer forming step is performed using a photosensitive element, it can be performed under reduced pressure from the standpoint of self-adhesion and followability. Heating during crimping can be performed at a temperature of 70°C to 130°C, and crimping can be performed at a pressure of 0.1 MPa to 1.0 MPa (1 kgf/cm 2 to 10 kgf/cm 2 ). These conditions can be as required And suitable for selection. In addition, if the photosensitive resin layer of the photosensitive element is heated to 70° C. to 130° C., it is not necessary to preheat the substrate in advance, but in order to further improve the adhesion and followability, the substrate may be preheated. .
(ii)曝光步驟 於曝光步驟中,使用投影出光罩影像的光化射線,經由透鏡對形成在基板上的感光性樹脂層的至少一部分照射光化射線,藉此使照射了光化射線的曝光部光硬化而形成光硬化部(潛影)。在使用所述感光性元件而形成感光性樹脂層的情況下,存在於感光性樹脂層上的支撐體相對於光化射線而言為透過性時,可通過支撐體而照射光化射線,但在支撐體相對於光化射線而言為遮光性時,在將支撐體除去後對感光性樹脂層照射光化射線。(Ii) Exposure step In the exposure step, using actinic rays projecting a reticle image, at least a portion of the photosensitive resin layer formed on the substrate is irradiated with actinic rays via a lens, thereby exposing the actinic rays The part is photohardened to form a photohardened part (latent image). When forming the photosensitive resin layer using the photosensitive element, when the support existing on the photosensitive resin layer is transparent to actinic rays, actinic rays may be irradiated through the support, but When the support is light-shielding with respect to actinic rays, the photosensitive resin layer is irradiated with actinic rays after the support is removed.
作為曝光方法,使用如下方法:使用投影出光罩影像的光化射線,經由透鏡而照射為影像狀的方法(投影曝光方式)。亦即,本實施方式的感光性樹脂組成物可應用於使用投影出光罩影像的光化射線,經由透鏡而照射為影像狀的方法(投影曝光方式)中。自使生產性提高的觀點考慮,可單獨使用投影曝光方式,亦可與投影曝光方式以外的曝光方式併用。作為可併用的曝光方式,例如可列舉經由被稱為「原圖(artwork)」的負型遮罩圖案而將光化射線照射為影像狀的方法(遮罩曝光法)、藉由雷射直接成像(Laser Direct Imaging,LDI)曝光法等直接描繪曝光法而將光化射線照射為影像狀的方法等。As an exposure method, a method of using actinic rays projecting a reticle image and irradiating the image-like shape through a lens (projection exposure method) is used. That is, the photosensitive resin composition of this embodiment can be applied to a method (projection exposure method) in which an actinic ray projecting a reticle image is irradiated into an image shape through a lens. From the viewpoint of improving productivity, the projection exposure method may be used alone or in combination with an exposure method other than the projection exposure method. Examples of the exposure method that can be used in combination include a method of irradiating actinic rays into an image form through a negative mask pattern called "artwork" (mask exposure method), and direct exposure by laser. Imaging (Laser Direct Imaging, LDI) exposure method, etc., a method of directly drawing an exposure method and irradiating actinic rays into an image.
作為光化射線的光源,若為通常使用的公知光源,則並無特別限制,例如可使用碳弧燈、水銀蒸氣弧光燈、超高壓水銀燈、高壓水銀燈、氙氣燈、氬雷射等氣體雷射,釔鋁石榴石雷射(Yttrium-Aluminum-Garnet Laser,YAG雷射)等固體雷射,氮化鎵系藍紫光雷射等半導體雷射等有效地放射紫外線的光源。而且,亦可使用照相用泛光燈、日光燈等有效地放射可見光的光源。該些中,自使解析性及對準性平衡良好地提高的觀點考慮,可使用可放射曝光波長為365 nm的i射線單色光的光源、可放射曝光波長為405 nm的h射線單色光的光源、或可放射ihg混合射線的曝光波長的光化射線的光源,其中可使用曝光波長為365 nm的i射線單色光的光源。作為可放射曝光波長為365 nm的i射線單色光的光源,例如可列舉超高壓水銀燈等。The light source for actinic rays is not particularly limited if it is a commonly known light source. For example, gas lasers such as carbon arc lamps, mercury vapor arc lamps, ultra-high pressure mercury lamps, high-pressure mercury lamps, xenon lamps, and argon lasers can be used. , Yttrium-Aluminum-Garnet Laser (YAG laser) and other solid-state lasers, gallium nitride-based blue-violet lasers and other semiconductor lasers and other light sources that effectively emit ultraviolet light. Furthermore, a light source that efficiently emits visible light such as a floodlight for photography or a fluorescent lamp can also be used. Among these, from the viewpoint of improving the balance between resolution and alignment, a light source capable of emitting i-ray monochromatic light with an exposure wavelength of 365 nm and an h-ray monochromatic with an exposure wavelength of 405 nm can be used A light source of light or a source of actinic rays that can emit ihg mixed rays at an exposure wavelength can be used, wherein a light source of i-ray monochromatic light with an exposure wavelength of 365 nm can be used. As a light source capable of radiating i-ray monochromatic light with a wavelength of 365 nm, for example, an ultra-high pressure mercury lamp can be cited.
(iii)顯影步驟 於顯影步驟中,藉由顯影將所述感光性樹脂層的未曝光部(未硬化部)自基板上除去。藉由顯影步驟,於基板上形成包含所述感光性樹脂層光硬化而成的光硬化部的抗蝕劑圖案。在感光性樹脂層上存在有支撐體的情況下,將支撐體除去後,藉由顯影將所述曝光部以外的未曝光部除去。顯影方法存在有濕式顯影與乾式顯影。(Iii) Development step In the development step, the unexposed portion (uncured portion) of the photosensitive resin layer is removed from the substrate by development. Through the development step, a resist pattern including a photo-hardened portion formed by photo-curing the photosensitive resin layer is formed on the substrate. When a support exists on the photosensitive resin layer, after removing the support, the unexposed part other than the exposed part is removed by development. The development methods include wet development and dry development.
在濕式顯影的情況下,可使用與感光性樹脂組成物對應的顯影液,藉由公知的濕式顯影方法進行顯影。作為濕式顯影方法,例如可列舉使用浸漬方式、覆液方式、高壓噴霧方式、刷洗、拍打、刮塗、振盪浸漬等的方法,自解析性提高的觀點考慮,可為高壓噴霧方式。該些濕式顯影方法可單獨使用一種或者組合兩種以上方法而進行顯影。In the case of wet development, a developer corresponding to the photosensitive resin composition can be used for development by a known wet development method. Examples of the wet development method include a dipping method, a coating method, a high-pressure spray method, brushing, tapping, blade coating, and oscillating immersion. From the viewpoint of improving self-resolution, a high-pressure spray method may be used. These wet development methods can be used alone or in combination of two or more methods.
顯影液可根據所述感光性樹脂組成物的構成而適宜選擇。例如可列舉鹼性水溶液、及有機溶劑顯影液等。The developer can be appropriately selected according to the structure of the photosensitive resin composition. For example, an alkaline aqueous solution, an organic solvent developer, etc. are mentioned.
自安全且穩定、操作性更良好的立場考慮,顯影液可使用鹼性水溶液。作為鹼性水溶液的鹼,例如可使用鋰、鈉或鉀的氫氧化物等鹼金屬氫氧化物,鋰、鈉、鉀或銨的碳酸鹽或碳酸氫鹽等鹼金屬碳酸鹽,磷酸鉀、磷酸鈉等鹼金屬磷酸鹽,焦磷酸鈉、焦磷酸鉀等鹼金屬焦磷酸鹽,硼砂(四硼酸鈉)、偏矽酸鈉、四甲基氫氧化銨、乙醇胺、乙二胺、二乙三胺、2-胺基-2-羥基甲基-1,3-丙二醇、1,3-二胺基-2-丙醇、嗎啉等。From the standpoint of safety, stability, and better operability, an alkaline aqueous solution can be used as the developer. As the base of the alkaline aqueous solution, for example, alkali metal hydroxides such as hydroxides of lithium, sodium, or potassium, alkali metal carbonates such as carbonates or bicarbonates of lithium, sodium, potassium, or ammonium, potassium phosphate, and phosphoric acid can be used. Alkali metal phosphates such as sodium, alkali metal pyrophosphates such as sodium pyrophosphate and potassium pyrophosphate, borax (sodium tetraborate), sodium metasilicate, tetramethylammonium hydroxide, ethanolamine, ethylenediamine, diethylenetriamine , 2-amino-2-hydroxymethyl-1,3-propanediol, 1,3-diamino-2-propanol, morpholine, etc.
作為顯影中所使用的鹼性水溶液,可為0.1質量%~5質量%的碳酸鈉的稀溶液、0.1質量%~5質量%的碳酸鉀的稀溶液、0.1~5質量%的氫氧化鈉的稀溶液、0.1質量%~5質量%的四硼酸鈉的稀溶液等。而且,顯影中所使用的鹼性水溶液的pH可以是9~11的範圍,鹼性水溶液的溫度可根據感光性樹脂層的顯影性而調節。而且,於鹼性水溶液中,例如可混入表面活化劑、消泡劑、用以促進顯影的少量有機溶劑等。As the alkaline aqueous solution used in the development, a dilute solution of 0.1 to 5 mass% sodium carbonate, a dilute solution of 0.1 to 5 mass% potassium carbonate, and a dilute solution of 0.1 to 5 mass% sodium hydroxide Dilute solution, 0.1% to 5% by mass of sodium tetraborate dilute solution, etc. In addition, the pH of the alkaline aqueous solution used for development may be in the range of 9 to 11, and the temperature of the alkaline aqueous solution may be adjusted according to the developability of the photosensitive resin layer. Furthermore, in an alkaline aqueous solution, for example, a surfactant, a defoamer, a small amount of organic solvent for promoting development, etc. may be mixed.
作為有機溶劑顯影液中使用的有機溶劑,例如可列舉1,1,1-三氯乙烷、N-甲基吡咯啶酮、N,N-二甲基甲醯胺、環己酮、甲基異丁基酮、γ-丁內酯、3-丙酮醇、丙酮、乙酸乙酯、具有碳數1~4的烷氧基的烷氧基乙醇、乙醇、異丙醇、丁醇、二乙二醇單甲醚、二乙二醇單乙醚、二乙二醇單丁醚等。自防止起火的觀點考慮,該些有機溶劑可在1質量%~20質量%的範圍內添加水而製成有機溶劑顯影液。Examples of the organic solvent used in the organic solvent developer include 1,1,1-trichloroethane, N-methylpyrrolidone, N,N-dimethylformamide, cyclohexanone, and methyl. Isobutyl ketone, γ-butyrolactone, 3-acetone alcohol, acetone, ethyl acetate, alkoxy ethanol having a C 1-4 alkoxy group, ethanol, isopropanol, butanol, diethylene glycol Alcohol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, etc. From the viewpoint of preventing fire, these organic solvents can be added with water in the range of 1% by mass to 20% by mass to prepare an organic solvent developer.
在本實施方式的抗蝕劑圖案的形成方法中,在顯影步驟中將未曝光部除去後,亦可視需要包含藉由進行60℃~250℃的加熱或0.2 J/cm2 ~10 J/cm2 的曝光量的曝光而使抗蝕劑圖案進一步硬化的步驟。In the method for forming a resist pattern of the present embodiment, after removing the unexposed portion in the development step, it may also be necessary to include heating by 60° C. to 250° C. or 0.2 J/cm 2 to 10 J/cm Step 2 : Exposure of the exposure amount to further harden the resist pattern.
<印刷電路板的製造方法> 本實施方式的印刷電路板的製造方法包含對藉由所述抗蝕劑圖案的形成方法而形成有抗蝕劑圖案的基板進行蝕刻處理或鍍敷處理,形成導體圖案的步驟,亦可視需要包含抗蝕劑圖案除去步驟等其他步驟。本實施方式的印刷電路板的製造方法使用利用所述感光性樹脂組成物的抗蝕劑圖案的形成方法,藉此可在導體圖案的形成中適宜地使用,其中更適宜的是應用於藉由鍍敷處理而形成導體圖案的方法中。<Manufacturing method of printed circuit board> The manufacturing method of the printed circuit board of this embodiment includes etching or plating the substrate formed with the resist pattern by the method of forming the resist pattern to form a conductor The patterning step may also include other steps such as a resist pattern removing step, if necessary. The method for manufacturing a printed circuit board of the present embodiment uses the method for forming a resist pattern using the photosensitive resin composition, whereby it can be suitably used in the formation of a conductor pattern, and it is more suitably applied to In the method of forming a conductor pattern by plating process.
在蝕刻處理中,將包含導體層的基板上所形成的抗蝕劑圖案作為遮罩,將未被抗蝕劑圖案包覆的基板的導體層蝕刻除去,形成導體圖案。In the etching process, the resist pattern formed on the substrate including the conductor layer is used as a mask, and the conductor layer of the substrate not covered by the resist pattern is etched away to form a conductor pattern.
蝕刻處理的方法可根據所需除去的導體層而適宜選擇。作為蝕刻液,例如可列舉氯化銅溶液、氯化鐵溶液、鹼性蝕刻溶液、過氧化氫系蝕刻液等,自蝕刻因子(etch factor)良好的方面考慮,可使用氯化鐵溶液。The etching treatment method can be appropriately selected according to the conductor layer to be removed. Examples of the etching solution include copper chloride solution, ferric chloride solution, alkaline etching solution, and hydrogen peroxide-based etching solution. From the viewpoint of good etching factor, an iron chloride solution can be used.
另一方面,在鍍敷處理中,將包含導體層的基板上所形成的抗蝕劑圖案作為遮罩,在未被抗蝕劑圖案包覆的基板的導體層上鍍敷銅或焊料等。在鍍敷處理後,藉由後述的抗蝕劑圖案的除去而將抗蝕劑圖案除去,進一步對被該抗蝕劑圖案包覆的導體層進行蝕刻,形成導體圖案。On the other hand, in the plating process, the resist pattern formed on the substrate including the conductor layer is used as a mask, and copper, solder, or the like is plated on the conductor layer of the substrate not covered by the resist pattern. After the plating process, the resist pattern is removed by removing the resist pattern described later, and the conductor layer covered with the resist pattern is further etched to form a conductor pattern.
作為鍍敷處理的方法,可為電鍍處理,亦可為無電鍍處理,自使良率進一步提高的立場考慮,可為無電鍍處理。作為無電鍍處理,例如可列舉硫酸銅鍍敷、焦磷酸銅鍍敷等鍍銅,高分散銲料鍍敷等銲料鍍敷,瓦特浴(硫酸鎳-氯化鎳)鍍敷,胺基磺酸鎳等鍍鎳,硬鍍金、軟鍍金等鍍金等。As a method of plating treatment, it may be electroplating treatment or electroless plating treatment, and it may be electroless plating treatment from the standpoint of further improving the yield. Examples of electroless plating include copper plating such as copper sulfate plating and copper pyrophosphate plating, solder plating such as highly dispersed solder plating, Watt bath (nickel sulfate-nickel chloride) plating, and nickel sulfamate Nickel plating, hard gold plating, soft gold plating, etc.
於所述蝕刻處理或鍍敷處理後,將基板上的抗蝕劑圖案除去。抗蝕劑圖案的除去例如可藉由比所述顯影步驟中所使用的鹼性水溶液更強鹼性的水溶液而剝離。作為該強鹼性水溶液,例如可使用1質量%~10質量%的氫氧化鈉水溶液、1質量%~10質量%的氫氧化鉀水溶液等。於該些中,自使剝離性進一步提高的立場考慮,可使用1質量%~5質量%的氫氧化鈉水溶液或氫氧化鉀水溶液。After the etching process or the plating process, the resist pattern on the substrate is removed. The removal of the resist pattern can be peeled off by, for example, an aqueous solution that is more alkaline than the alkaline aqueous solution used in the development step. As the strong alkaline aqueous solution, for example, a 1% by mass to 10% by mass sodium hydroxide aqueous solution, a 1% by mass to 10% by mass potassium hydroxide aqueous solution, or the like can be used. Among these, from the standpoint of further improving the releasability, a sodium hydroxide aqueous solution or a potassium hydroxide aqueous solution of 1% by mass to 5% by mass can be used.
作為抗蝕劑圖案的剝離方式,例如可列舉浸漬方式、噴霧方式等,該些可單獨使用,亦可併用。Examples of the peeling method of the resist pattern include a dipping method and a spraying method. These may be used alone or in combination.
在實施鍍敷處理後將抗蝕劑圖案除去的情況下,進一步藉由蝕刻處理對被抗蝕劑圖案包覆的導體層進行蝕刻,形成導體圖案,藉此可製造所期望的印刷電路板。此時的蝕刻處理方法可根據所需除去的導體層而適宜選擇。例如可應用所述蝕刻液。When the resist pattern is removed after performing the plating process, the conductive layer covered with the resist pattern is further etched by an etching process to form a conductive pattern, whereby a desired printed circuit board can be manufactured. The etching treatment method at this time can be appropriately selected according to the conductor layer to be removed. For example, the etching solution can be applied.
本實施方式的印刷電路板的製造方法不僅僅可應用於單層印刷電路板的製造中,亦可應用於多層印刷電路板的製造中,而且,亦可應用於具有小徑通孔的印刷電路板等的製造中。The manufacturing method of the printed circuit board of this embodiment can be applied not only to the manufacture of a single-layer printed circuit board, but also to the manufacture of a multilayer printed circuit board, and can also be applied to a printed circuit having a small-diameter through hole In the manufacture of boards, etc.
本實施方式的印刷電路板的製造方法可在高密度封裝基板的製造、特別是利用半加成法的配線板的製造中適宜地使用。另外,將利用半加成法的配線板的製造步驟的一例表示於圖2(a)~圖2(f)中。The method of manufacturing a printed circuit board of the present embodiment can be suitably used in the manufacturing of high-density package substrates, particularly the manufacturing of wiring boards by the semi-additive method. In addition, an example of the manufacturing process of the wiring board by the semi-additive method is shown in FIGS. 2(a) to 2(f).
在圖2(a)中,準備在絕緣層50上形成有導體層40的基板(電路形成用基板)。導體層40例如是銅層。在圖2(b)中,藉由所述感光性樹脂層形成步驟而在基板的導體層40上形成感光性樹脂層30。在圖2(c)中,藉由所述曝光步驟,在感光性樹脂層30上照射投影出光罩影像的光化射線80,於感光性樹脂層30形成光硬化部。在圖2(d)中,藉由顯影步驟,將藉由所述曝光步驟而形成的光硬化部以外的區域自基板上除去,藉此在基板上形成作為光硬化部的抗蝕劑圖案32。在圖2(e)中,藉由將抗蝕劑圖案32作為遮罩的鍍敷處理,在未被抗蝕劑圖案包覆的基板的導體層40上形成鍍敷層60。在圖2(f)中,藉由強鹼的水溶液將抗蝕劑圖案32剝離後,藉由快閃蝕刻處理而將被抗蝕劑圖案32遮蔽的導體層40除去,形成包含蝕刻處理後的鍍敷層62及蝕刻處理後的導體層42的導體圖案70。在導體層40與鍍敷層60中,材質可相同亦可不同。在導體層40與鍍敷層60為相同材質的情況下,導體層40與鍍敷層60亦可一體化。另外,在圖2(a)~圖2(f)中關於投影曝光方式而進行了說明,但亦可併用遮罩曝光法、直接描繪曝光法而形成抗蝕劑圖案32。In FIG. 2( a ), a substrate (substrate for circuit formation) in which the
以上,關於本實施方式而進行了說明,但本揭示並不受所述實施方式任何限定。 [實施例]In the above, the present embodiment has been described, but the present disclosure is not limited to the above-mentioned embodiment. [Example]
以下,基於實施例對本揭示的目的及優點加以更具體的說明,但本揭示並不限定於以下實施例。亦即,應解釋為並不藉由該些實施例中所列舉的特定材料及其量以及其他諸條件及詳細,而對本揭示不當地限制。另外,若無特別說明,則「份」及「%」是質量基準。Hereinafter, the purpose and advantages of the present disclosure will be described more specifically based on the embodiments, but the present disclosure is not limited to the following embodiments. That is, it should be construed that the specific materials listed in these embodiments and their amounts, as well as other conditions and details, do not improperly limit the present disclosure. In addition, unless otherwise specified, "parts" and "%" are quality standards.
[實施例1~實施例9及比較例1~比較例7] 首先,依照合成例1而合成下述表1及表2中所示的黏合劑聚合物(A-1)。[Examples 1 to 9 and Comparative Examples 1 to 7] First, according to Synthesis Example 1, the binder polymer (A-1) shown in Table 1 and Table 2 below was synthesized.
<合成例1> 將作為聚合性單體的125 g甲基丙烯酸、25 g甲基丙烯酸甲酯、125 g甲基丙烯酸苄酯及225 g苯乙烯與1.5 g偶氮雙異丁腈加以混合而製備溶液a。<Synthesis Example 1> 125 g of methacrylic acid, 25 g of methyl methacrylate, 125 g of benzyl methacrylate, and 225 g of styrene were mixed with 1.5 g of azobisisobutyronitrile as a polymerizable monomer. Prepare solution a.
而且,在100 g的60 g甲基溶纖劑及40 g甲苯的混合液(質量比3:2)中溶解1.2 g偶氮雙異丁腈而製備溶液b。Furthermore, a solution b was prepared by dissolving 1.2 g of azobisisobutyronitrile in a mixed solution (mass ratio of 3:2) of 100 g of 60 g methyl cellosolve and 40 g of toluene.
另一方面,在具有攪拌機、回流冷凝器、溫度計、滴液漏斗及氮氣導入管的燒瓶中,加入400 g質量比為3:2的甲基溶纖劑及甲苯的混合液(以下亦稱為「混合液x」),一面吹入氮氣一面進行攪拌,加熱至80℃。On the other hand, in a flask equipped with a stirrer, a reflux condenser, a thermometer, a dropping funnel, and a nitrogen introduction tube, add 400 g of a mixed solution of methyl cellosolve and toluene with a mass ratio of 3:2 (hereinafter also referred to as "Mixed solution x"), stirring while blowing nitrogen gas, and heating to 80°C.
於燒瓶內的混合液x中,將滴加速度設為固定而以4小時滴加所述溶液a,然後在80℃下進行2小時的攪拌。其次,在該燒瓶內的溶液中,將滴加速度設為固定而以10分鐘滴加所述溶液b,然後在80℃下對燒瓶內的溶液進行3小時的攪拌。進一步以30分鐘使燒瓶內的溶液升溫至90℃,在90℃下保溫2小時後,冷卻至室溫而獲得黏合劑聚合物(A-1)的溶液。在該黏合劑聚合物(A-1)的溶液中加入混合液x而以不揮發成分(固體成分)成為50質量%的方式進行製備。In the mixed solution x in the flask, the solution a was added dropwise for 4 hours with the drop acceleration fixed, and then stirred at 80° C. for 2 hours. Next, in the solution in the flask, the solution b was added dropwise at a fixed acceleration rate for 10 minutes, and then the solution in the flask was stirred at 80° C. for 3 hours. The solution in the flask was further heated to 90° C. for 30 minutes, and kept at 90° C. for 2 hours, and then cooled to room temperature to obtain a solution of the binder polymer (A-1). The mixed solution x was added to the solution of the binder polymer (A-1) to prepare the non-volatile component (solid content) to be 50% by mass.
黏合劑聚合物(A-1)的重量平均分子量為50,000,酸值為163 mgKOH/g。另外,藉由中和滴定法而測定酸值。具體而言,可藉由如下方式而進行測定:在1 g黏合劑聚合物的溶液中添加30 g丙酮,進一步使其均一溶解後,將作為指示劑的酚酞適量添加於所述黏合劑聚合物的溶液中,使用0.1 N的KOH水溶液而進行滴定。重量平均分子量是藉由凝膠滲透層析法而測定,使用標準聚苯乙烯的校準曲線進行換算而導出。GPC的條件如下所示。The weight average molecular weight of the binder polymer (A-1) is 50,000, and the acid value is 163 mgKOH/g. In addition, the acid value was measured by the neutralization titration method. Specifically, it can be measured by adding 30 g of acetone to a solution of 1 g of a binder polymer and further uniformly dissolving it, and then adding an appropriate amount of phenolphthalein as an indicator to the binder polymer The solution was titrated with 0.1 N KOH aqueous solution. The weight average molecular weight is measured by gel permeation chromatography, and is derived by conversion using a calibration curve of standard polystyrene. The conditions of GPC are as follows.
GPC條件 泵:日立 L-6000型(日立製作所股份有限公司製造) 管柱:以下的共計3根(管柱規格:10.7 mmφ×300 mm、均為日立化成股份有限公司製造) Gelpack GL-R420 Gelpack GL-R430 Gelpack GL-R440 溶離液:四氫呋喃 試樣濃度:採集120 mg固體成分為50質量%的黏合劑聚合物,將其溶解於5 mL四氫呋喃中而製備試樣。 測定溫度:25℃ 流量:2.05 mL/min 檢測器:日立 L-3300型RI(日立製作所股份有限公司製造、產品名)GPC condition pump: Hitachi L-6000 (manufactured by Hitachi, Ltd.) Tubing: a total of 3 of the following (tubing specifications: 10.7 mmφ×300 mm, all manufactured by Hitachi Chemical Co., Ltd.) Gelpack GL-R420 Gelpack GL-R430 Gelpack GL-R440 Dissolution solution: Tetrahydrofuran Sample concentration: Collect 120 mg of a binder polymer with a solid content of 50% by mass, and dissolve it in 5 mL of tetrahydrofuran to prepare a sample. Measurement temperature: 25°C Flow rate: 2.05 mL/min Detector: Hitachi L-3300 type RI (manufactured by Hitachi, Ltd., product name)
<感光性樹脂組成物的製備> 其次,藉由將下述表1及表2中所示的各成分以同一表中所示的量(單位:質量份)加以混合,獲得實施例1~實施例9及比較例1~比較例7的感光性樹脂組成物。另外,表1及表2中的(A)成分及(B)成分的調配量均為以固體成分計的調配量。而且,在任意實施例及比較例中,(B)成分中所含的聚合抑制劑(甲氧基苯酚等)的合計的含量均是以(A)成分及(B)成分的固體成分總量為基準(100質量%),不足0.01質量%。<Preparation of photosensitive resin composition> Next, by mixing the components shown in the following Table 1 and Table 2 in the amounts (units: parts by mass) shown in the same table, Examples 1 to 4 were obtained. The photosensitive resin compositions of Example 9 and Comparative Examples 1 to 7. In addition, the formulation amounts of (A) component and (B) component in Table 1 and Table 2 are all formulation amounts based on solid content. In any of the examples and comparative examples, the total content of the polymerization inhibitors (methoxyphenol, etc.) contained in the component (B) is the total solid content of the component (A) and the component (B) As a benchmark (100% by mass), less than 0.01% by mass.
[表1]
[表2]
表1及表2中的各成分的詳細如下所示。 (A)成分:黏合劑聚合物 *1:黏合劑聚合物(A-1) 甲基丙烯酸/甲基丙烯酸甲酯/甲基丙烯酸苄酯/苯乙烯=25/5/25/45(質量比)、重量平均分子量=50,000、固體成分=50質量%、甲基溶纖劑/甲苯=3/2(質量比)溶液The details of each component in Table 1 and Table 2 are as follows. (A) Ingredient: Adhesive polymer*1: Adhesive polymer (A-1) Methacrylic acid/methyl methacrylate/benzyl methacrylate/styrene=25/5/25/45 (mass ratio ), weight average molecular weight = 50,000, solid content = 50% by mass, methyl cellosolve/toluene = 3/2 (mass ratio) solution
(B)成分:具有乙烯性不飽和鍵的光聚合性化合物 *2:FA-024M(日立化成股份有限公司製造、產品名) 聚烯烴二醇二甲基丙烯酸酯(EO基:6(平均值)、PO基:12(平均值)) *3:FA-321M(日立化成股份有限公司製造、產品名) 2,2-雙(4-(甲基丙烯醯氧基五乙氧基)苯基)丙烷 *4:BPE-200(新中村化學工業股份有限公司製造、產品名) 2,2-雙(4-(甲基丙烯醯氧基二乙氧基)苯基)丙烷 *5:BP-2EM(共榮社化學股份有限公司製造、產品名) 2,2-雙(4-(甲基丙烯醯氧基聚乙氧基)苯基)丙烷(EO基:2.6(平均值))(B) Component: Photopolymerizable compound having an ethylenic unsaturated bond *2: FA-024M (manufactured by Hitachi Chemical Co., Ltd., product name) Polyolefin glycol dimethacrylate (EO group: 6 (average value ), PO group: 12 (average)) *3: FA-321M (manufactured by Hitachi Chemical Co., Ltd., product name) 2,2-bis(4-(methacryloxypentaethoxy)phenyl ) Propane*4: BPE-200 (manufactured by Shin Nakamura Chemical Industry Co., Ltd., product name) 2,2-bis(4-(methacryloxydiethoxy)phenyl)propane*5: BP- 2EM (manufactured by Kyoeisha Chemical Co., Ltd., product name) 2,2-bis(4-(methacryloxypolyethoxy)phenyl)propane (EO group: 2.6 (average))
(C)成分:光聚合起始劑 *6:B-CIM(保土谷化學工業股份有限公司製造、產品名) 2,2'-雙(2-氯苯基)-4,4',5,5'-四苯基雙咪唑(C) Ingredient: Photopolymerization initiator *6: B-CIM (manufactured by Hodogaya Chemical Industry Co., Ltd., product name) 2,2'-bis(2-chlorophenyl)-4,4',5, 5'-Tetraphenylbisimidazole
(D)成分:光增感劑 *7:吡唑啉化合物(保土谷化學工業股份有限公司製造、化學物名:1-苯基-3-(4-甲氧基苯乙烯基)-5-(4-甲氧基苯基)吡唑啉) *8:EAB(保土谷化學工業股份有限公司製造、產品名) 4,4'-雙(二乙基胺基)二苯甲酮(D) Ingredient: Light sensitizer *7: Pyrazoline compound (manufactured by Hodogaya Chemical Industry Co., Ltd., chemical name: 1-phenyl-3-(4-methoxystyryl)-5- (4-methoxyphenyl)pyrazoline) *8: EAB (manufactured by Hodogaya Chemical Industry Co., Ltd., product name) 4,4'-bis(diethylamino)benzophenone
(E)成分:聚合抑制劑 *9:TBC(迪愛生(DIC)股份有限公司製造) 4-第三丁基兒茶酚(E) Ingredient: Polymerization inhibitor *9: TBC (made by DIC) Co., Ltd. 4-Third-butyl catechol
<感光性元件的製作> 將所述所得的實施例1~實施例9及比較例1~比較例7的感光性樹脂組成物分別均一地塗佈於厚度為16 μm的聚對苯二甲酸乙二酯膜(東麗股份有限公司製造、產品名「FB40」)(支撐體)上,藉由100℃的熱風對流式乾燥機進行10分鐘的乾燥,形成乾燥後的膜厚為10 μm的感光性樹脂層。<Preparation of photosensitive element> The obtained photosensitive resin compositions of Examples 1 to 9 and Comparative Examples 1 to 7 were uniformly applied to polyethylene terephthalate with a thickness of 16 μm, respectively. The diester film (manufactured by Toray Co., Ltd., product name "FB40") (support) was dried with a hot air convection dryer at 100°C for 10 minutes to form a photosensitive film with a thickness of 10 μm after drying Sexual resin layer.
在該感光性樹脂層上貼合聚丙烯膜(保護層)(塔瑪寶理(TAMAPOLY)股份有限公司製造、產品名「NF-15」),獲得順次積層有支撐體、感光性樹脂層、保護層的感光性元件。A polypropylene film (protective layer) (manufactured by TAMAPOLY Co., Ltd., product name "NF-15") was laminated on the photosensitive resin layer to obtain a layered support, a photosensitive resin layer, The photosensitive element of the protective layer.
<積層體的製作> 使用具有相當於#600的刷子的研磨機(三啟股份有限公司製造)而對在兩個面積層有厚度為12 μm的銅箔的玻璃環氧材料的覆銅積層板(基板、日立化成股份有限公司製造、產品名「MCL-E-67」)的銅表面進行研磨,於水洗後在空氣流下進行乾燥。將研磨後的覆銅積層板加溫至80℃,一面將保護層剝去,一面以使感光性樹脂層與銅表面相接的方式,將所述所得的感光性元件分別層壓於覆銅積層板上。使用110℃的加熱輥,在0.40 MPa的壓接壓力下,以1.5 m/min的輥速度而進行層壓。<Preparation of laminate> A copper-clad laminate with a glass epoxy material having a copper foil with a thickness of 12 μm in two areas layered using a grinder (made by Sanqi Co., Ltd.) with a brush equivalent to #600 (Substrate, Hitachi Chemical Co., Ltd., product name "MCL-E-67") The copper surface is polished, washed with water and dried under air flow. After heating the polished copper-clad laminate to 80°C, the protective layer is peeled off, and the photosensitive elements obtained above are laminated on the copper-clad in such a way that the photosensitive resin layer is in contact with the copper surface Laminate. Using a heated roller at 110° C., under a crimping pressure of 0.40 MPa, lamination was performed at a roller speed of 1.5 m/min.
如上所述地進行,分別獲得順次積層有覆銅積層板、感光性樹脂層、支撐體的積層體。所得的積層體作為以下所示的試驗中的試片而使用。As described above, a layered product in which a copper-clad laminate, a photosensitive resin layer, and a support are sequentially stacked is obtained. The obtained laminate was used as a test piece in the test shown below.
<評價> (光感度的評價) 將所述所得的試片分割為三個區域,在其中一個區域的支撐體上放置濃度區域為0.00~2.00、濃度階梯為0.05、平板大小為20 mm×187 mm、各階梯的大小為3 mm×12 mm的日立41級梯型板。曝光是使用以波長為365 nm的半導體雷射為光源的投影曝光裝置(牛尾(Ushio)電機股份有限公司製造、產品名「UX-2240SMXJ-01」),以100 mJ/cm2 的能量(曝光量)對感光性樹脂層進行曝光。此時,藉由黑色片材覆蓋未使用的其他區域。而且,對於分別不同的區域,藉由同樣的方法分別以150 mJ/cm2 、200 mJ/cm2 的能量進行曝光。另外,照度的測定使用應用與365 nm對應探針的紫外線照度計(牛尾電機股份有限公司製造、產品名「UIT-250」)、光接收器(牛尾電機股份有限公司製造、產品名「UVD-S365」)。<Evaluation> (Evaluation of light sensitivity) Divide the obtained test piece into three areas, place a concentration area of 0.00 to 2.00, a concentration step of 0.05, and a plate size of 20 mm×187 on one of the supports mm, the size of each step is 3 mm × 12 mm Hitachi 41-step ladder plate. The exposure is a projection exposure device (product made by Ushio Motor Co., Ltd., product name "UX-2240SMXJ-01") using a semiconductor laser with a wavelength of 365 nm as the light source, with an energy of 100 mJ/cm 2 (exposure Amount) to expose the photosensitive resin layer. At this time, other unused areas are covered with black sheets. In addition, for different areas, exposure is performed with the energy of 150 mJ/cm 2 and 200 mJ/cm 2 by the same method. In addition, for the measurement of illuminance, an ultraviolet illuminance meter (manufactured by Niuwei Electric Co., Ltd., product name "UIT-250") using a probe corresponding to 365 nm, and an optical receiver (manufactured by Niuwei Electric Co., Ltd., product name "UVD- S365").
其次,自試片剝離支撐體,使用30℃的1.0質量%碳酸鈉水溶液,以最短顯影時間(除去未曝光部的最短時間)的2倍時間對感光性樹脂層進行噴射顯影,將未曝光部除去而進行顯影處理。另外,所述最短顯影時間可藉由如下方式而求出:測定藉由所述顯影處理將未曝光部的感光性樹脂層完全除去的時間。Next, the support was peeled off from the test piece, and the photosensitive resin layer was spray-developed at twice the shortest development time (the shortest time to remove the unexposed portion) using a 1.0% by mass sodium carbonate aqueous solution at 30°C to remove the unexposed portion. It is removed and developed. In addition, the minimum development time can be determined by measuring the time for completely removing the photosensitive resin layer in the unexposed portion by the development process.
在顯影處理後,測定各曝光量下的覆銅積層板上所形成的光硬化物(抗蝕劑圖案)的梯型板的殘存級數(階梯級數)。其次,製成曝光量與階梯級數的校準曲線,求出階梯級數成為11級的曝光量(單位:mJ/cm2 ),將其作為感光性樹脂組成物的光感度。該曝光量越少,越表示光感度良好。將結果表示於表3及表4中。After the development treatment, the number of remaining steps (step number) of the ladder-shaped plate of the photo-hardened material (resist pattern) formed on the copper-clad laminate at each exposure was measured. Next, a calibration curve of the exposure amount and the step number is prepared, and the exposure amount (unit: mJ/cm 2 ) with the step number of 11 steps is obtained, and this is used as the light sensitivity of the photosensitive resin composition. The smaller the exposure amount, the better the light sensitivity. The results are shown in Table 3 and Table 4.
(解析度的評價) 於所述所得的試片的支撐體上,放置具有線寬/間隙寬度為z/z(z=1~30(以1 μm的間隔變化))(單位:μm)的配線圖案作為解析度評價用圖案的玻璃遮罩,使用以波長為365 nm的半導體雷射為光源的投影曝光裝置(牛尾電機股份有限公司製造、產品名「UX-2240SMXJ-01」),以日立41級梯型板的顯影後的殘存階梯級數成為11級的能量對感光性樹脂層進行曝光。曝光後,進行與所述光感度評價同樣的顯影處理。(Evaluation of resolution) On the support of the obtained test piece, a line width/gap width of z/z (z=1 to 30 (change at intervals of 1 μm)) (unit: μm) was placed The wiring pattern is used as a glass mask for the resolution evaluation pattern, and a projection exposure device (manufactured by Niuwei Electric Co., Ltd., product name "UX-2240SMXJ-01") using a semiconductor laser with a wavelength of 365 nm as a light source is used. After the development of the 41-step ladder-type plate, the number of remaining step steps becomes 11 steps, and the photosensitive resin layer is exposed. After exposure, the same development process as the above-mentioned photosensitivity evaluation was performed.
在顯影處理後,使用光學顯微鏡對抗蝕劑圖案進行觀察。將藉由顯影處理而將未曝光部完全除去的線部分(曝光部)間的間隙寬度中的最小值(最小間隙寬度、單位:μm)作為解析度評價的指標。該數值越小,則越表示解析度良好。將結果表示於表3及表4中。After the development process, the resist pattern was observed using an optical microscope. The minimum value (minimum gap width, unit: μm) among the gap widths between the line portions (exposed parts) where the unexposed portions were completely removed by the development process was used as an index for resolution evaluation. The smaller the value, the better the resolution. The results are shown in Table 3 and Table 4.
(縱橫比的評價) 關於在所述解析度的評價中所形成的抗蝕劑圖案的寬度的最小的線部分,測定自覆銅積層板表面起的高度(以下稱為「線高」)。該線高(單位:μm)除以在所述解析度的評價中完全除去未曝光部的抗蝕劑圖案的最小線寬(單位:μm)(可以說與所述解析度的評價中的最小間隙寬度的值一致),算出縱橫比(線高/最小線寬)。將結果表示於表3及表4中。(Evaluation of Aspect Ratio) With respect to the smallest line portion of the width of the resist pattern formed in the evaluation of the resolution, the height from the surface of the copper-clad laminate (hereinafter referred to as "line height") was measured. This line height (unit: μm) is divided by the minimum line width (unit: μm) of the resist pattern in which the unexposed portion is completely removed in the evaluation of the resolution (it can be said that it is the smallest in the evaluation of the resolution The value of the gap width is the same), calculate the aspect ratio (line height/minimum line width). The results are shown in Table 3 and Table 4.
[表3]
[表4]
如根據表3及表4所示的結果可知般:可確認使用聚合抑制劑的含量相對於(A)成分及(B)成分的固體成分總量100質量份而言為0.03質量份~0.3質量份的實施例1~實施例9的感光性樹脂組成物而形成的抗蝕劑圖案,與比較例1~比較例7相比而言,解析度優異,縱橫比高。另外,實施例1~實施例9的感光性樹脂組成物與比較例1~比較例7的感光性樹脂組成物相比而言曝光量高,雖然低感度化,但該低感度化未必是劣位特性,可以說是符合半導體封裝等領域中的市場要求的適當的光感度域。而且,在特別重視解析度的半導體封裝等領域中,強烈要求即便使解析度降低1 μm的單位,亦會使解析性良好,因此使解析度自6 μm~7 μm(比較例)良好地成為4 μm~5 μm(實施例)的效果可以說是極大的效果。As can be seen from the results shown in Tables 3 and 4, the content of the polymerization inhibitor used can be confirmed to be 0.03 parts by mass to 0.3 parts by mass relative to 100 parts by mass of the total solid content of the components (A) and (B). Compared to Comparative Examples 1 to 7, the resist pattern formed by the photosensitive resin composition of Example 1 to Example 9 is superior in resolution and high in aspect ratio. In addition, the photosensitive resin compositions of Examples 1 to 9 have a higher exposure than the photosensitive resin compositions of Comparative Examples 1 to 7. Although the sensitivity is reduced, the reduction in sensitivity is not necessarily a disadvantage. The characteristics can be said to be an appropriate light sensitivity range that meets the market requirements in the fields of semiconductor packaging and the like. Furthermore, in fields such as semiconductor packaging where resolution is particularly important, it is strongly required that even if the resolution is reduced by 1 μm unit, the resolution will be good. Therefore, the resolution from 6 μm to 7 μm (comparative example) becomes good The effect of 4 μm to 5 μm (Example) can be said to be a great effect.
而且,根據使用吡唑啉化合物作為光增感劑的實施例1~實施例7及實施例9、與使用EAB作為光增感劑的實施例8的比較可確認:聚合抑制劑的含量相對於(A)成分及(B)成分的固體成分總量100質量份而言為0.03質量份~0.3質量份的實施例1~實施例9的感光性樹脂組成物,不論光增感劑的種類如何,均可獲得解析度優異、縱橫比得到提高的抗蝕劑圖案。 [產業上之可利用性]Furthermore, according to the comparison of Examples 1 to 7 and 9 using a pyrazoline compound as a photosensitizer, and Example 8 using EAB as a photosensitizer, it can be confirmed that the content of the polymerization inhibitor relative to (A) The total solid content of the component and (B) component is 0.03 parts by mass to 0.3 parts by mass for 100 parts by mass of the photosensitive resin composition of Examples 1 to 9, regardless of the type of the photosensitizer , A resist pattern with excellent resolution and improved aspect ratio can be obtained. [Industry availability]
如以上說明般,藉由本揭示可提供:在使用投影曝光方式而形成抗蝕劑圖案的情況下,可形成解析度優異、且縱橫比高的抗蝕劑圖案的感光性樹脂組成物、及使用其的感光性元件、抗蝕劑圖案的形成方法以及印刷電路板的製造方法。As described above, the present disclosure can provide a photosensitive resin composition that can form a resist pattern with excellent resolution and a high aspect ratio when a resist pattern is formed using a projection exposure method, and use A photosensitive element, a resist pattern forming method and a printed circuit board manufacturing method therefor.
1‧‧‧感光性元件
2‧‧‧支撐體
3、30‧‧‧感光性樹脂層
4‧‧‧保護層
32‧‧‧抗蝕劑圖案
40‧‧‧導體層
42‧‧‧蝕刻處理後的導體層
50‧‧‧絕緣層
60‧‧‧鍍敷層
62‧‧‧蝕刻處理後的鍍敷層
70‧‧‧導體圖案
80‧‧‧光化射線1‧‧‧
圖1是表示本揭示的感光性元件的一實施方式的示意剖面圖。 圖2(a)~圖2(f)是示意性表示利用半加成工法的印刷電路板的製造步驟的一例的圖。FIG. 1 is a schematic cross-sectional view showing an embodiment of the photosensitive element of the present disclosure. FIGS. 2( a) to 2 (f) are diagrams schematically showing an example of manufacturing steps of a printed circuit board using a semi-additive method.
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| CN114585974A (en) * | 2019-10-16 | 2022-06-03 | 昭和电工材料株式会社 | Photosensitive resin film, method for forming resist pattern, and method for forming wiring pattern |
| WO2021166083A1 (en) * | 2020-02-18 | 2021-08-26 | 昭和電工マテリアルズ株式会社 | Photosensitive resin composition, photosensitive element, method for producing wiring board, and photosensitive element roll |
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| TW201351043A (en) * | 2006-04-18 | 2013-12-16 | Hitachi Chemical Co Ltd | Photosensitive element, method for formation of resist pattern, and method for production of print circuit board |
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