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TWI680791B - Purification method and purification system for helium gas - Google Patents

Purification method and purification system for helium gas Download PDF

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TWI680791B
TWI680791B TW105106553A TW105106553A TWI680791B TW I680791 B TWI680791 B TW I680791B TW 105106553 A TW105106553 A TW 105106553A TW 105106553 A TW105106553 A TW 105106553A TW I680791 B TWI680791 B TW I680791B
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helium
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TW201637706A (en
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岸井充
尤瓏
志摩康一
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日商住友精化股份有限公司
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01DSEPARATION
    • B01D53/00Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
    • B01D53/02Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by adsorption, e.g. preparative gas chromatography
    • B01D53/04Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by adsorption, e.g. preparative gas chromatography with stationary adsorbents
    • B01D53/047Pressure swing adsorption
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    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00Nitrogen; Compounds thereof
    • C01B21/04Purification or separation of nitrogen
    • C01B21/0405Purification or separation processes
    • C01B21/0433Physical processing only
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01DSEPARATION
    • B01D2259/00Type of treatment
    • B01D2259/40Further details for adsorption processes and devices
    • B01D2259/40007Controlling pressure or temperature swing adsorption

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Abstract

本發明之課題為於利用小規模之設備對氦氣高純度地進行純化時提高回收率。於變壓式吸附裝置1之吸附塔2a、2b、2c、2d中,依序實行吸附、脫附、升壓步驟,而使原料氦氣中所含之雜質氣體吸附於吸附劑。於吸附步驟後且脫附步驟前之吸附塔中實行吹送內部氣體之第1氣體吹送步驟,同時於脫附步驟後且升壓步驟前之吸附塔中,實行導入所吹送之氣體之第1氣體導入步驟。於第1氣體吹送步驟後且脫附步驟前之吸附塔中實行吹送內部氣體之第2氣體吹送步驟,同時於脫附步驟後且第1氣體導入步驟前之吸附塔中實行導入所吹送之氣體之第2氣體導入步驟。利用真空泵將脫附步驟之吸附塔之內部減壓至未達大氣壓。 The object of the present invention is to improve the recovery rate when purifying helium gas with high purity using a small-scale facility. In the adsorption towers 2a, 2b, 2c, and 2d of the pressure swing adsorption device 1, the steps of adsorption, desorption, and pressure increase are sequentially performed to adsorb the impurity gas contained in the raw material helium gas to the adsorbent. In the adsorption tower after the adsorption step and before the desorption step, the first gas blowing step of blowing the internal gas is performed, and in the adsorption tower after the desorption step and before the pressure step, the first gas of the introduced gas is carried out Import steps. The second gas blowing step of blowing the internal gas is performed in the adsorption tower after the first gas blowing step and before the desorption step, and the introduction of the blown gas is performed in the adsorption tower after the desorption step and before the first gas introducing step The second gas introduction step. The inside of the adsorption tower in the desorption step was depressurized to a subatmospheric pressure using a vacuum pump.

Description

氦氣之純化方法及純化系統 Helium purification method and purification system

本發明係關於一種藉由對包含雜質氣體之原料氦氣進行純化而獲得高純度之氦氣之方法與系統。 The present invention relates to a method and system for obtaining high-purity helium gas by purifying raw material helium gas containing impurity gas.

關於例如用作MRI(Magnetic Resonance Imaging,磁共振成像)之冷卻用液體、製造光纖時之多孔質母材形成步驟或拉線步驟等中之環境氣體或冷卻氣體的氦,僅作為美國或中東各國等海外產天然氣之副產品而少量生產。又,認為於以亞洲為中心之新興國家之製造業中,氦需求於今後亦增加。但是,由於對今後之氦之穩定之供給有所擔憂,故而氦價格持續上升。如此,由於氦之資源性較高而貴重,故而為了自使用設備中進行再利用,有用的是加以回收。因此,期待將混入有大量空氣等雜質氣體之稀薄氦氣作為原料氦氣而進行回收,並高純度地進行純化。 For example, helium used as a cooling liquid for MRI (Magnetic Resonance Imaging), as an ambient gas or a cooling gas in the process of forming a porous base material or the wire drawing step in the manufacture of optical fibers, is only used in the United States or countries in the Middle East It is produced as a by-product of natural gas produced overseas. In addition, it is believed that the demand for helium will also increase in the manufacturing industries of emerging countries centered on Asia. However, due to concerns about the stable supply of helium in the future, the price of helium continues to rise. In this way, since helium is highly resourced and expensive, it is useful to recycle it for reuse in the equipment used. Therefore, it is expected that the rare helium gas mixed with a large amount of impurity gases such as air is recovered as the raw material helium gas and purified with high purity.

先前,作為將原料氦氣高純度地進行純化之方法,已知有如下變壓式吸附法(PSA法):藉由使用具有複數個吸附塔之變壓式吸附裝置,使雜質氣體吸附於吸附劑,而自氦氣進行分離(參照專利文獻1)。於變壓式吸附法中,反覆進行依序實行如下步驟之純化處理循環:吸附步驟,其使導入至吸附塔中之原料氦氣中所含之雜質氣體於加壓下吸附於吸附劑,並且排出未吸附於吸附劑之純化氦氣;脫附步 驟,其使雜質氣體自吸附劑脫附並作為排氣而排出;及升壓步驟,其使吸附塔之內部壓力上升。 Previously, as a method for purifying the raw material helium with high purity, the following pressure swing adsorption method (PSA method) is known: by using a pressure swing adsorption device having a plurality of adsorption towers, the impurity gas is adsorbed to the adsorption Agent, and separate from helium (see Patent Document 1). In the pressure swing adsorption method, the purification process cycle in which the following steps are carried out in sequence is performed repeatedly: an adsorption step, which allows the impurity gas contained in the raw material helium gas introduced into the adsorption tower to adsorb to the adsorbent under pressure, and Purify purified helium gas that is not adsorbed on the adsorbent; desorption step At the same time, it desorbs the impurity gas from the adsorbent and is discharged as exhaust gas; and the step of raising pressure, which raises the internal pressure of the adsorption tower.

已知於變壓式吸附法中,於處於吸附步驟後且脫附步驟前之狀態之吸附塔中實行減少內部壓力之減壓步驟,同時於處於脫附步驟後且升壓步驟前之狀態之吸附塔中,實行於導入處於減壓步驟之吸附塔之內部氣體後作為排氣而排出之洗淨步驟。又,已知於處於吸附步驟後且脫附步驟前之狀態之吸附塔之任一者中,實行吹送內部氣體之第1氣體吹送步驟,同時於處於脫附步驟後且升壓步驟前之狀態之吸附塔之另外任一者中實行導入所吹送之內部氣體之第1氣體導入步驟,進而於處於第1氣體吹送步驟後且脫附步驟前之狀態之吸附塔之任一者中實行吹送內部氣體之第2氣體吹送步驟,同時於處於脫附步驟後且第1氣體導入步驟前之狀態之吸附塔之另外任一者中實行導入所吹送之內部氣體之第2氣體導入步驟(參照專利文獻2)。藉由將供實行氣體吹送步驟之吸附塔之內部氣體導入至供實行氣體導入步驟之吸附塔之內部,兩吸附塔之內部壓力差會縮小。即,於每一純化處理循環中實行2次吸附塔之內部壓力差之減少。又,亦已知於每一純化處理循環中實行3次以上吸附塔之內部壓力差之減少(參照專利文獻3)。 It is known that in the pressure swing adsorption method, a decompression step for reducing the internal pressure is performed in the adsorption tower in the state after the adsorption step and before the desorption step, and at the same time in the state after the desorption step and before the pressure step In the adsorption tower, a cleaning step is performed after introducing the internal gas of the adsorption tower in the depressurization step and discharging it as exhaust gas. Also, it is known that in any of the adsorption towers in the state after the adsorption step and before the desorption step, the first gas blowing step of blowing the internal gas is performed, while being in the state after the desorption step and before the boosting step The first gas introduction step of introducing the blown internal gas is carried out in any one of the adsorption towers, and the inside of the adsorption tower in the state after the first gas blowing step and before the desorption step is carried out In the second gas blowing step of the gas, at the same time, the second gas introduction step of introducing the blown internal gas is performed in any one of the adsorption towers in the state after the desorption step and before the first gas introduction step (refer to Patent Literature 2). By introducing the internal gas of the adsorption tower for performing the gas blowing step into the interior of the adsorption tower for performing the gas introduction step, the internal pressure difference between the two adsorption towers is reduced. That is, the reduction in the internal pressure difference of the adsorption tower is carried out twice in each purification treatment cycle. In addition, it is also known to reduce the internal pressure difference of the adsorption tower three or more times in each purification treatment cycle (see Patent Document 3).

進而,已知於變壓式吸附法之脫附步驟中,實行利用真空泵將吸附塔之內部減壓至未達大氣壓、即真空脫附步驟。 Furthermore, it is known that in the desorption step of the pressure swing adsorption method, a vacuum desorption step is performed in which the inside of the adsorption tower is depressurized to less than atmospheric pressure by a vacuum pump.

[先前技術文獻] [Prior Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本專利第5372607號 [Patent Document 1] Japanese Patent No. 5372607

[專利文獻2]美國專利第3564816號 [Patent Document 2] US Patent No. 3564816

[專利文獻3]日本專利特開平52-59073號 [Patent Document 3] Japanese Patent Laid-Open No. 52-59073

氦氣由於較貴重,因此業界期待於對包含雜質氣體之原料氦氣進行純化時提高回收率。然而,根據如專利文獻1中所記載之變壓式吸附法,於對氦氣高純度地進行純化之情形時,作為排氣而排出之氦氣增多,氦氣之回收率降低。 Because helium is expensive, the industry expects to increase the recovery rate when purifying the raw material helium containing impurity gas. However, according to the pressure swing adsorption method described in Patent Document 1, when helium gas is purified with high purity, helium gas discharged as exhaust gas increases, and the recovery rate of helium gas decreases.

又,於減少吸附塔之內部壓力差時,藉由將吸附步驟後且脫附步驟前之吸附塔之內部氣體導入至脫附步驟後且升壓步驟前之吸附塔中,可提高氦氣之回收率。然而,如專利文獻2所記載,於每一純化處理中即便進行複數次循環吸附塔之內部壓力差之減少,亦無法充分地提高回收率。 In addition, when reducing the internal pressure difference of the adsorption tower, by introducing the internal gas of the adsorption tower after the adsorption step and before the desorption step into the adsorption tower after the desorption step and before the boosting step, the helium gas can be increased Recovery rate. However, as described in Patent Document 2, even if the internal pressure difference of the adsorption tower is repeatedly reduced in each purification process, the recovery rate cannot be sufficiently improved.

進而,雖然藉由真空脫附步驟可恢復吸附劑之性能而提高回收率,但利用真空脫附步驟之回收率之提高度較微小。 Furthermore, although the performance of the adsorbent can be restored by the vacuum desorption step and the recovery rate is improved, the degree of improvement of the recovery rate by the vacuum desorption step is small.

因此,根據先前技術,有於利用小規模之純化系統對氦氣高純度地進行純化之情形時難以提高回收率之問題。本發明之目的在於提供一種可解決使用變壓式吸附法之先前技術之問題之氦氣之純化方法與純化系統。 Therefore, according to the prior art, there is a problem that it is difficult to increase the recovery rate when purifying helium gas with high purity using a small-scale purification system. An object of the present invention is to provide a helium purification method and purification system that can solve the problems of the prior art using the pressure swing adsorption method.

本發明係依據以下之見解。 The present invention is based on the following findings.

於變壓式吸附法中,利用吸附塔之內部壓力差之減少之回收率之提高度、及利用真空脫附步驟之回收率之提高度分別為較微小者。因此,先前認為即便將實行複數次吸附塔之內部壓力差之減少與真空脫附步驟加以組合,回收率亦不會大幅度提高。又,因其組合而純化所需之時間增加,純化系統變得複雜,故而認為與回收率略微提高之優點相比,純化成本增大之缺點較大。因此,於先前之使用變壓式吸附法之氦氣之純化方法中,未將實行複數次吸附塔之內部壓力差之減少與真空脫附步驟之實行加以組合。 In the pressure swing adsorption method, the increase in the recovery rate using the reduction in the internal pressure difference of the adsorption tower and the increase in the recovery rate using the vacuum desorption step are respectively smaller. Therefore, it was previously thought that even if the reduction of the internal pressure difference of the adsorption tower is carried out a plurality of times and the vacuum desorption step is combined, the recovery rate will not be greatly improved. In addition, the time required for purification due to the combination increases, and the purification system becomes complicated. Therefore, it is considered that the disadvantage of increased purification cost is greater than the advantage of slightly improved recovery rate. Therefore, in the previous purification method of helium gas using the pressure swing adsorption method, the reduction of the internal pressure difference of the adsorption tower was not combined with the implementation of the vacuum desorption step.

本案發明者發現,於此種先前之技術水準下,進行此種組合之 情形時之回收率的提高度大於僅將利用實行複數次吸附塔之內部壓力差之減少之回收率之提高度、與利用真空脫附步驟之回收率之提高度合計,發揮出協同效應,從而完成本發明。 The inventor of the present case found that under such previous technical level, such a combination of In this case, the increase in the recovery rate is greater than the increase in the recovery rate using only the reduction of the internal pressure difference of the adsorption tower and the increase in the recovery rate using the vacuum desorption step, which exerts a synergistic effect, thereby Complete the present invention.

本發明之氦氣之純化方法於使用具有複數個吸附塔之變壓式吸附裝置,對包含雜質氣體之原料氦氣進行純化時,於上述吸附塔各者中,收納優先於氦氣而吸附雜質氣體之吸附劑,並向上述吸附塔各者中依序導入上述原料氦氣,且於上述吸附塔各者中,依序實行如下步驟:吸附步驟,其使所導入之上述原料氦氣中所含之雜質氣體於加壓下吸附於上述吸附劑,並且排出未吸附於上述吸附劑之純化氦氣;脫附步驟,其使上述雜質氣體自吸附劑脫附並作為排氣而排出;及升壓步驟,其使內部壓力上升。實行自處於上述吸附步驟後且上述脫附步驟前之狀態之上述吸附塔之任一者吹送內部氣體之第1氣體吹送步驟,同時實行將該所吹送之內部氣體導入至處於上述脫附步驟後且上述升壓步驟前之狀態之上述吸附塔之另外任一者中之第1氣體導入步驟。實行自處於上述第1氣體吹送步驟後且上述脫附步驟前之狀態之上述吸附塔之任一者吹送內部氣體之第2氣體吹送步驟,同時實行將該所吹送之內部氣體導入至處於上述脫附步驟後且上述第1氣體導入步驟前之狀態之上述吸附塔之另外任一者中之第2氣體導入步驟。於上述脫附步驟中,利用真空泵將上述吸附塔之內部減壓至未達大氣壓。 The purification method of the helium gas of the present invention uses a pressure swing adsorption device having a plurality of adsorption towers to purify the raw material helium gas containing impurity gas. Gas adsorbent, and the above-mentioned raw material helium gas is sequentially introduced into each of the above-mentioned adsorption towers, and in each of the above-mentioned adsorption towers, the following steps are sequentially performed: an adsorption step, which causes the The impurity gas contained is adsorbed on the adsorbent under pressure, and purified helium gas that is not adsorbed on the adsorbent is discharged; a desorption step, which desorbs the impurity gas from the adsorbent and discharges it as exhaust gas; and l The pressing step causes the internal pressure to rise. The first gas blowing step of blowing the internal gas from any of the adsorption towers in the state after the adsorption step and before the desorption step is performed, and the introduction of the blown internal gas to the position after the desorption step And the first gas introduction step in any one of the adsorption towers in the state before the pressure increase step. The second gas blowing step of blowing the internal gas from any one of the adsorption towers in the state after the first gas blowing step and before the desorption step is performed, and the introduction of the blown internal gas until the desorption is performed The second gas introduction step of any one of the adsorption towers in the state after the step and before the first gas introduction step. In the above desorption step, the inside of the adsorption tower is depressurized to a subatmospheric pressure using a vacuum pump.

根據本發明方法,藉由將自處於第1氣體吹送步驟之吸附塔吹送之內部氣體導入至處於第1氣體導入步驟之吸附塔中,兩吸附塔之內部壓力差減少。又,藉由將自處於第2氣體吹送步驟之吸附塔吹送之內部氣體導入至處於第2氣體導入步驟之吸附塔中,兩吸附塔之內部壓力差減少。即,於每一純化處理循環中可進行2次吸附塔之內部壓力差之減少。 According to the method of the present invention, by introducing the internal gas blown from the adsorption tower in the first gas blowing step into the adsorption tower in the first gas introduction step, the internal pressure difference between the two adsorption towers is reduced. In addition, by introducing the internal gas blown from the adsorption tower in the second gas blowing step into the adsorption tower in the second gas introduction step, the internal pressure difference between the two adsorption towers is reduced. That is, the internal pressure difference of the adsorption tower can be reduced twice in each purification treatment cycle.

藉由吸附塔之內部壓力差之減少,處於第1、第2氣體吹送步驟之吸附塔之內部氣體被導入至處於第1、第2氣體導入步驟之吸附塔中,因此可使其內部氣體中所含之雜質氣體吸附於吸附劑,並回收未吸附於吸附劑之純化氦氣。又,藉由在脫附步驟中利用真空泵將吸附塔之內部減壓至未達大氣壓,可實行真空脫附步驟。藉由真空脫附步驟可恢復吸附劑之性能。 By reducing the internal pressure difference of the adsorption tower, the internal gas in the adsorption tower in the first and second gas blowing steps is introduced into the adsorption tower in the first and second gas introduction steps, so it can be made into the internal gas The impurity gas contained is adsorbed on the adsorbent, and the purified helium gas not adsorbed on the adsorbent is recovered. In addition, by depressurizing the inside of the adsorption tower to a subatmospheric pressure using a vacuum pump in the desorption step, a vacuum desorption step can be performed. The performance of the adsorbent can be restored by the vacuum desorption step.

即,藉由在於每一純化處理循環中實行2次吸附塔之內部壓力差之減少,且藉由真空脫附步驟恢復吸附劑之性能,可利用協同效應而大幅提高氦氣之回收率。 That is, by performing the reduction of the internal pressure difference of the adsorption tower twice in each purification treatment cycle, and recovering the performance of the adsorbent through the vacuum desorption step, the synergistic effect can be utilized to greatly increase the recovery rate of helium.

處於上述第1氣體吹送步驟之吸附塔之內部壓力與處於上述第1氣體導入步驟之吸附塔之內部壓力的差雖然無需於上述第1氣體吹送步驟與上述第1氣體導入步驟之結束時消除,但可消除該差而使兩內部壓力均等化。又,處於上述第2氣體吹送步驟之吸附塔之內部壓力與處於上述第2氣體導入步驟之吸附塔之內部壓力的差雖然無需於上述第2氣體吹送步驟與上述第2氣體導入步驟之結束時消除,但可消除該差而使兩內部壓力均等化。 Although the difference between the internal pressure of the adsorption tower in the first gas blowing step and the internal pressure of the adsorption tower in the first gas introduction step does not need to be eliminated at the end of the first gas blowing step and the first gas introduction step, However, this difference can be eliminated to equalize the two internal pressures. Also, the difference between the internal pressure of the adsorption tower in the second gas blowing step and the internal pressure of the adsorption tower in the second gas introduction step need not be at the end of the second gas blowing step and the second gas introduction step Eliminate, but the difference can be eliminated to equalize the two internal pressures.

本發明之氦氣之純化系統具備具有複數個吸附塔之變壓式吸附裝置,且於上述吸附塔各者中,收納優先於氦氣而吸附雜質氣體之吸附劑。上述變壓式吸附裝置具有:原料氣體導入流路,其用以向上述吸附塔各者中導入上述原料氦氣;純化氣體流路,其用以自上述吸附塔各者排出純化氦氣;排氣流路,其用以自上述吸附塔各者排出排氣;連通流路,其用以使上述吸附塔之任一者與另外任一者相互連通;原料氣體導入路開關閥,其將上述吸附塔各者與上述原料氣體導入流路之間個別地進行開關;純化氣體路開關閥,其將上述吸附塔各者與上述純化氣體流路之間個別地進行開關;排氣路開關閥,其將上述吸附塔各者與排氣流路之間個別地進行開關;及連通路開關閥,其 將上述吸附塔各者與上述連通流路之間個別地進行開關。上述開關閥各者被設為以可個別地進行開關動作之方式具有開關用致動器之自動閥,並且與控制裝置連接。於上述吸附塔各者中,利用上述控制裝置控制上述開關閥各者,以依序實行如下步驟:吸附步驟,其使所導入之上述原料氦氣中所含之雜質氣體於加壓下吸附於上述吸附劑,並且排出未吸附於上述吸附劑之純化氦氣;脫附步驟,其使上述雜質氣體自吸附劑脫附並作為排氣而排出;及升壓步驟,其使內部壓力上升。為了實行自處於上述吸附步驟後且上述脫附步驟前之狀態之上述吸附塔之任一者吹送內部氣體之第1氣體吹送步驟,同時實行將該所吹送之內部氣體導入至處於上述脫附步驟後且上述升壓步驟前之狀態之上述吸附塔之另外任一者中之第1氣體導入步驟,而以處於上述第1氣體吹送步驟之上述吸附塔之任一者之內部與處於上述第1氣體導入步驟之上述吸附塔之另外任一者之內部相通之方式,利用上述控制裝置控制上述開關閥各者。為了實行自處於上述第1氣體吹送步驟後且上述脫附步驟前之狀態之上述吸附塔之任一者吹送內部氣體之第2氣體吹送步驟,同時實行將該所吹送之內部氣體導入至處於上述脫附步驟後且上述第1氣體導入步驟前之狀態之上述吸附塔之另外任一者中之第2氣體導入步驟,而以處於上述第2氣體吹送步驟之上述吸附塔之任一者之內部與處於上述第2氣體導入步驟之上述吸附塔之另外任一者之內部相通之方式,利用上述控制裝置控制上述開關閥各者。具備將處於上述脫附步驟之上述吸附塔之內部減壓至未達大氣壓之真空泵。 The helium purification system of the present invention includes a pressure swing adsorption device having a plurality of adsorption towers, and each of the adsorption towers contains an adsorbent that adsorbs impurity gas in preference to helium. The pressure swing adsorption device includes: a raw material gas introduction flow path for introducing the raw material helium gas to each of the adsorption towers; a purified gas flow path for discharging purified helium gas from each of the adsorption towers; The gas flow path is used to discharge the exhaust gas from each of the adsorption towers; the communication flow path is used to communicate any one of the adsorption towers with the other; the raw gas is introduced into the on-off valve, which opens the above Each of the adsorption towers is individually opened and closed between the raw material gas introduction flow path; the purified gas path on-off valve, which is individually opened and closed between each of the adsorption towers and the purified gas flow path; the exhaust path on-off valve, It separately switches between each of the above adsorption towers and the exhaust gas flow path; and a communication path switching valve, which Each of the adsorption towers is individually switched between the communication channels. Each of the above-mentioned on-off valves is configured as an automatic valve having an on-off actuator so as to be able to perform an on-off operation individually, and is connected to a control device. In each of the above adsorption towers, each of the on-off valves is controlled by the control device to sequentially perform the following steps: an adsorption step that causes the impurity gas contained in the introduced raw material helium gas to be adsorbed under pressure The adsorbent, and the purified helium gas not adsorbed to the adsorbent is discharged; a desorption step, which desorbs the impurity gas from the adsorbent and is discharged as exhaust gas; and a pressure increase step, which raises the internal pressure. In order to perform the first gas blowing step of blowing the internal gas from any of the adsorption towers in the state after the adsorption step and before the desorption step, at the same time, the introduction of the blown internal gas to the desorption step The first gas introduction step of any one of the other adsorption towers in the state before and after the pressure increase step, and the interior of any one of the adsorption towers in the first gas blowing step and in the first In the gas introduction step, the internals of any one of the adsorption towers are communicated, and each of the on-off valves is controlled by the control device. In order to perform the second gas blowing step of blowing the internal gas from any of the adsorption towers in the state after the first gas blowing step and before the desorption step, at the same time, the internal gas blown into After the desorption step and before the first gas introduction step, the second gas introduction step of any one of the other adsorption towers is located inside any one of the adsorption towers of the second gas blowing step Each of the on-off valves is controlled by the control device so as to communicate with the inside of any one of the adsorption towers in the second gas introduction step. It is equipped with a vacuum pump that depressurizes the inside of the adsorption tower in the desorption step to subatmospheric pressure.

根據本發明系統,可實施本發明方法。 According to the inventive system, the inventive method can be implemented.

於本發明方法中,較佳為將自處於上述第1氣體吹送步驟之上述吸附塔被吹送並導入至處於上述第1氣體導入步驟之上述吸附塔中之氣體量增加至上述原料氦氣之氦濃度般之高程度。 In the method of the present invention, it is preferable to increase the amount of gas blown from the adsorption tower in the first gas blowing step and introduced into the adsorption tower in the first gas introduction step to the helium of the raw material helium gas High level of concentration.

藉此,由於被導入至處於第1氣體導入步驟之吸附塔中之氦氣量 增加至原料氦氣之氦濃度般之高程度,因此可提高氦氣之回收率。因此,於原料氦氣之氦濃度進行變動之情形時,例如於使用如自光纖之製造步驟等排出之氦氣作為原料氦氣之情形時,可靈活地應對原料氣體之濃度變動。 By this, due to the amount of helium introduced into the adsorption tower in the first gas introduction step The helium concentration of the raw material helium is increased to a high level, so the recovery rate of helium can be improved. Therefore, when the helium concentration of the raw material helium gas changes, for example, when the helium gas discharged from the manufacturing process of the optical fiber is used as the raw material helium gas, the concentration of the raw material gas can be flexibly responded to.

於該情形時,較佳為,本發明系統具備調節於上述連通流路中流動之氣體流量之流量控制閥,上述流量控制閥被設為以可進行流量調節動作之方式具有流量調節用致動器之自動閥,並且與上述控制裝置連接,且具備檢測上述原料氦氣之氦濃度並且與上述控制裝置連接之感測器,上述第1氣體吹送步驟及上述第1氣體導入步驟之預先決定之一定之實行時間被記憶於上述控制裝置中,自處於上述第1氣體吹送步驟之上述吸附塔被吹送並導入至處於上述第1氣體導入步驟之上述吸附塔中之氣體於上述連通流路中之流量、與上述原料氦氣之氦濃度之間的預先決定之對應關係被記憶於上述控制裝置中,為了僅以由上述控制裝置所記憶之上述實行時間實行上述第1氣體吹送步驟及上述第1氣體導入步驟而控制上述開關閥,並且基於上述對應關係利用上述流量控制閥變更上述連通流路之開度,以使自處於上述第1氣體吹送步驟之上述吸附塔被吹送並導入至處於上述第1氣體導入步驟之上述吸附塔中之氣體量增加至由上述感測器所檢測到之氦濃度般之高程度。 In this case, it is preferable that the system of the present invention includes a flow control valve that adjusts the flow rate of the gas flowing in the communication flow path, and the flow control valve is configured to have an actuator for flow adjustment so that the flow adjustment operation can be performed. The automatic valve of the device is connected to the control device and includes a sensor that detects the helium concentration of the raw material helium gas and is connected to the control device. The first gas blowing step and the first gas introduction step are predetermined A certain execution time is memorized in the control device, the gas from the adsorption tower in the first gas blowing step is blown and introduced into the gas in the adsorption tower in the first gas introducing step in the communication flow path The predetermined correspondence between the flow rate and the helium concentration of the raw material helium gas is memorized in the control device, so that the first gas blowing step and the first gas injection step are performed only at the execution time memorized by the control device In the gas introduction step, the on-off valve is controlled, and the opening degree of the communication flow path is changed by the flow control valve based on the correspondence relationship, so that the adsorption tower from the first gas blowing step is blown and introduced to the 1 The amount of gas in the adsorption tower in the gas introduction step is increased to a level as high as the helium concentration detected by the sensor.

或者,較佳為,本發明系統具備檢測上述原料氦氣之氦濃度並且與上述控制裝置連接之感測器,上述第1氣體吹送步驟及上述第1氣體導入步驟之實行時間與上述原料氦氣中之氦濃度之間的預先決定之對應關係被記憶於上述控制裝置中,利用上述控制裝置基於上述對應關係變更上述第1氣體吹送步驟及上述第1氣體導入步驟之實行時間,以使自處於上述第1氣體吹送步驟之上述吸附塔被吹送並導入至處於上述第1氣體導入步驟之上述吸附塔中之氣體量增加至由上述感測器 所檢測到之氦濃度般之高程度。 Alternatively, it is preferable that the system of the present invention includes a sensor that detects the helium concentration of the raw material helium gas and is connected to the control device, the execution time of the first gas blowing step and the first gas introduction step, and the raw material helium gas The predetermined correspondence between the helium concentrations in is stored in the control device, and the control device is used to change the execution time of the first gas blowing step and the first gas introduction step based on the correspondence so that The adsorption tower in the first gas blowing step is blown and introduced into the adsorption tower in the first gas introduction step to increase the amount of gas to the sensor The detected helium concentration is as high as it is.

於本發明方法中,較佳為,於處於上述第1氣體吹送步驟後且上述第2氣體吹送步驟前之狀態之上述吸附塔之任一者中,實行減少內部壓力之減壓步驟,同時於處於上述脫附步驟後且上述第2氣體導入步驟前之狀態之上述吸附塔之另外任一者中,實行於導入處於上述減壓步驟之上述吸附塔之內部氣體後作為排氣而排出之洗淨步驟。 In the method of the present invention, preferably, in any of the adsorption towers in a state after the first gas blowing step and before the second gas blowing step, a decompression step for reducing the internal pressure is performed while In any one of the adsorption towers in the state after the desorption step and before the second gas introduction step, washing performed by introducing the internal gas of the adsorption tower in the depressurization step and discharging it as exhaust gas Net steps.

於該情形時,較佳為,本發明系統利用上述控制裝置控制上述開關閥各者,以於處於上述第1氣體吹送步驟後且上述第2氣體吹送步驟前之狀態之上述吸附塔之任一者中,實行減少內部壓力之減壓步驟,同時於處於上述脫附步驟後且上述第2氣體導入步驟前之狀態之上述吸附塔之另外任一者中,實行於導入處於上述減壓步驟之上述吸附塔之內部氣體後作為排氣而排出之洗淨步驟。 In this case, it is preferable that the system of the present invention uses the control device to control each of the on-off valves so that any one of the adsorption towers is in a state after the first gas blowing step and before the second gas blowing step Among them, the decompression step for reducing the internal pressure is performed, and at the same time, in any one of the adsorption towers in the state after the desorption step and before the second gas introduction step, the decompression step is carried out The washing step of exhausting the internal gas of the adsorption tower as exhaust gas.

於本發明方法中,較佳為將自處於上述減壓步驟之上述吸附塔被吹送並導入至處於上述洗淨步驟之上述吸附塔中之氣體量減少至上述原料氦氣之氦濃度般之高程度。進而較佳為,於上述原料氦氣之氦濃度為預先決定之設定值以上時,不實行上述洗淨步驟。 In the method of the present invention, it is preferable to reduce the amount of gas blown from the adsorption tower in the depressurization step and introduced into the adsorption tower in the cleaning step to as high as the helium concentration of the raw material helium gas degree. Further preferably, when the helium concentration of the raw material helium gas is more than a predetermined set value, the washing step is not performed.

藉此,於將吸附塔之內部洗淨後作為排氣而排出之氦氣量減少至原料氦氣之氦濃度般之高程度,因此可提高氦氣之回收率。因此,於原料氦氣之氦濃度進行變動之情形時,例如於使用如自光纖之製造步驟等排出之氦氣作為原料氦氣之情形時,可靈活地應對原料氣體之濃度變動。 By this, the amount of helium gas discharged as exhaust gas after washing the inside of the adsorption tower is reduced to a level as high as the helium concentration of the raw material helium gas, so the recovery rate of helium gas can be improved. Therefore, when the helium concentration of the raw material helium gas changes, for example, when the helium gas discharged from the manufacturing process of the optical fiber is used as the raw material helium gas, the concentration of the raw material gas can be flexibly responded to.

於該情形時,較佳為,本發明系統利用上述控制裝置控制上述開關閥各者,以於處於上述第1氣體吹送步驟後且上述第2氣體吹送步驟前之狀態之上述吸附塔之任一者中,實行減少內部壓力之減壓步驟,同時於處於上述脫附步驟後且上述第2氣體導入步驟前之狀態之上述吸附塔之另外任一者中,實行於導入處於上述減壓步驟之上述吸 附塔之內部氣體後作為排氣而排出之洗淨步驟,且具備調節於上述連通流路中流動之氣體流量之流量控制閥,上述流量控制閥被設為以可進行流量調節動作之方式具有流量調節用致動器之自動閥,並且與上述控制裝置連接,且具備檢測上述原料氦氣之氦濃度並且與上述控制裝置連接之感測器,上述洗淨步驟之預先決定之一定之實行時間被記憶於上述控制裝置中,自處於上述減壓步驟之上述吸附塔被吹送並導入至處於上述洗淨步驟之上述吸附塔中之氣體於上述連通流路中之流量、與上述原料氦氣之氦濃度之間的預先決定之對應關係被記憶於上述控制裝置中,為了僅以由上述控制裝置所記憶之上述實行時間實行上述洗淨步驟而控制上述開關閥,並且基於上述對應關係利用上述流量控制閥變更上述連通流路之開度,以使自處於上述減壓步驟之上述吸附塔被吹送並導入至處於上述洗淨步驟之上述吸附塔中之氣體量減少至由上述感測器所檢測到之氦濃度般之高程度。 In this case, it is preferable that the system of the present invention uses the control device to control each of the on-off valves so that any one of the adsorption towers is in a state after the first gas blowing step and before the second gas blowing step Among them, the decompression step for reducing the internal pressure is performed, and at the same time, in any one of the adsorption towers in the state after the desorption step and before the second gas introduction step, the decompression step is carried out Suction above A cleaning step of exhausting the internal gas in the tower and exhausting it as exhaust gas, and including a flow control valve that adjusts the flow rate of the gas flowing in the communication channel, and the flow control valve is set to have a flow adjustment operation An automatic valve for an actuator for flow rate adjustment, which is connected to the control device and is provided with a sensor which detects the helium concentration of the raw material helium gas and is connected to the control device, and a predetermined certain execution time of the cleaning step It is memorized in the control device, the flow rate of the gas in the communication flow path from the adsorption tower in the depressurization step and the introduction to the adsorption tower in the washing step, and the flow rate of the raw material helium gas The predetermined correspondence between the helium concentrations is memorized in the control device, the on-off valve is controlled to execute the washing step only at the execution time memorized by the control device, and the flow rate is used based on the correspondence The control valve changes the opening degree of the communication flow path so that the amount of gas that is blown from the adsorption tower in the depressurization step and introduced into the adsorption tower in the cleaning step is reduced to be detected by the sensor As high as the helium concentration.

或者,較佳為,利用上述控制裝置控制上述開關閥各者,以於處於上述第1氣體吹送步驟後且上述第2氣體吹送步驟前之狀態之上述吸附塔之任一者中,實行減少內部壓力之減壓步驟,同時於處於上述脫附步驟後且上述第2氣體導入步驟前之狀態之上述吸附塔之另外任一者中,實行於導入處於上述減壓步驟之上述吸附塔之內部氣體後作為排氣而排出之洗淨步驟,且具備檢測上述原料氦氣之氦濃度並且與上述控制裝置連接之感測器,上述洗淨步驟之實行時間與上述原料氦氣中之氦濃度之間的預先決定之對應關係被記憶於上述控制裝置中,利用上述控制裝置基於上述對應關係變更上述洗淨步驟之實行時間,以使自處於上述減壓步驟之上述吸附塔被吹送並導入至處於上述洗淨步驟之上述吸附塔中之氣體量減少至由上述感測器所檢測到之氦濃度般之高程度。 Alternatively, it is preferable that each of the on-off valves is controlled by the control device so that any of the adsorption towers in a state after the first gas blowing step and before the second gas blowing step is to reduce the internal The depressurization step of the pressure is carried out at the same time in any of the adsorption towers in the state after the desorption step and before the second gas introduction step, by introducing the internal gas of the adsorption tower in the decompression step A cleaning step that is discharged as exhaust gas and is provided with a sensor that detects the helium concentration of the raw material helium gas and is connected to the control device, and the execution time of the cleaning step is between the helium concentration in the raw material helium gas The predetermined correspondence relationship is stored in the control device, and the control device is used to change the execution time of the washing step based on the correspondence relationship, so that the adsorption tower from the decompression step is blown and introduced to the above The amount of gas in the adsorption tower in the washing step is reduced to a level as high as the helium concentration detected by the sensor.

於本發明方法中,較佳為向上述原料氦氣之向上述吸附塔各者 之導入流路中導入上述排氣,以將上述排氣再利用作上述原料氦氣。藉此,由於可將排氣中所含之氦氣再利用,故而可提高回收率。於該情形時,較佳為本發明系統具備用以將上述排氣流路與上述原料氣體導入流路連接之再利用流路。 In the method of the present invention, it is preferred that each of the raw material helium gas flows to the adsorption tower. The exhaust gas is introduced into the introduction flow path to reuse the exhaust gas as the raw material helium gas. By this, the helium gas contained in the exhaust gas can be reused, so the recovery rate can be improved. In this case, it is preferable that the system of the present invention includes a reuse flow path for connecting the exhaust gas flow path and the raw material gas introduction flow path.

於本發明方法中,較佳為將導入至上述吸附塔各者中之上述原料氦氣之氦濃度設為15vol%以上。藉此,可減少氦氣之浪費而高效率地獲得目標純度之氦氣。再者,關於原料氦氣之氦濃度,於與再利用之排氣混合之情形時,由於混合後被導入至變壓式吸附裝置中,因此若混合後為15vol%以上,則可藉由本發明方法而高效率地獲得目標純度之氦氣。 In the method of the present invention, it is preferable to set the helium concentration of the raw material helium gas introduced into each of the adsorption towers to 15 vol% or more. By this, the waste of helium gas can be reduced and the target purity helium gas can be efficiently obtained. In addition, regarding the helium concentration of the raw material helium gas, when mixed with the recycled exhaust gas, the mixed helium is introduced into the pressure swing adsorption device, so if the mixing is 15 vol% or more, the invention can be used Method to efficiently obtain helium with target purity.

於本發明方法中,較佳為以自上述吸附塔各者於上述吸附步驟中排出之純化氦氣之氦濃度成為目標純度、例如99.999vol%以上之方式,設定利用上述變壓式吸附裝置之吸附步驟之重複間隔。進而,為了獲得高純度氦氣,亦能夠以自上述吸附塔各者於上述吸附步驟中排出之純化氦氣之氦濃度成為99.9999vol%以上之方式,設定利用上述變壓式吸附裝置之上述吸附步驟之重複間隔。 In the method of the present invention, it is preferable to set the pressure swing type adsorption device so that the helium concentration of the purified helium gas discharged from each of the adsorption towers in the adsorption step becomes a target purity, for example, 99.999 vol% or more. The repetition interval of the adsorption step. Furthermore, in order to obtain high-purity helium gas, the adsorption using the pressure swing adsorption device can also be set such that the helium concentration of the purified helium gas discharged from each of the adsorption towers in the adsorption step becomes 99.9999 vol% or more Steps are repeated at intervals.

根據本發明,可提供一種於利用小規模之設備對包含雜質之氦氣高純度地進行純化時,可有助於提高氦氣之回收率之方法與系統。 According to the present invention, it is possible to provide a method and system that can help to improve the recovery rate of helium gas when purifying helium gas containing impurities with high purity by using small-scale equipment.

1‧‧‧變壓式吸附裝置 1‧‧‧ Pressure swing adsorption device

2a‧‧‧吸附塔 2a‧‧‧Adsorption tower

2a'‧‧‧氣體通過口 2a'‧‧‧gas through port

2a"‧‧‧氣體通過口 2a"‧‧‧gas through port

2b‧‧‧吸附塔 2b‧‧‧Adsorption tower

2b'‧‧‧氣體通過口 2b'‧‧‧gas through port

2b"‧‧‧氣體通過口 2b"‧‧‧gas through port

2c‧‧‧吸附塔 2c‧‧‧Adsorption tower

2c'‧‧‧氣體通過口 2c'‧‧‧gas through port

2c"‧‧‧氣體通過口 2c"‧‧‧gas through port

2d‧‧‧吸附塔 2d‧‧‧adsorption tower

2d'‧‧‧氣體通過口 2d'‧‧‧gas through port

2d"‧‧‧氣體通過口 2d"‧‧‧gas through port

3‧‧‧原料氣體導入配管(原料氣體導入流路) 3‧‧‧ Raw material gas introduction piping (source gas introduction flow path)

4‧‧‧純化氣體配管(純化氣體流路) 4‧‧‧Purified gas piping (purified gas flow path)

5‧‧‧排氣配管(排氣流路) 5‧‧‧Exhaust piping (exhaust flow path)

6a‧‧‧第1開關閥(原料氣體導入路開關閥) 6a‧‧‧The first on-off valve (on-off valve of raw material gas introduction path)

6b‧‧‧第2開關閥(原料氣體導入路開關閥) 6b‧‧‧Second on-off valve (on-off valve for feed gas introduction)

6c‧‧‧第3開關閥(原料氣體導入路開關閥) 6c‧‧‧ 3rd on-off valve (on-off valve for feed gas inlet)

6d‧‧‧第4開關閥(原料氣體導入路開關閥) 6d‧‧‧ 4th on-off valve (on-off valve for feed gas inlet)

7a‧‧‧第5開關閥(純化氣體路開關閥) 7a‧‧‧The fifth on-off valve (purified gas circuit on-off valve)

7b‧‧‧第6開關閥(純化氣體路開關閥) 7b‧‧‧Sixth on-off valve (purified gas on-off valve)

7c‧‧‧第7開關閥(純化氣體路開關閥) 7c‧‧‧ 7th on-off valve (purified gas circuit on-off valve)

7d‧‧‧第8開關閥(純化氣體路開關閥) 7d‧‧‧ 8th on-off valve (purified gas circuit on-off valve)

8a‧‧‧第9開關閥(排氣路開關閥) 8a‧‧‧ 9th on-off valve (exhaust on-off valve)

8b‧‧‧第10開關閥(排氣路開關閥) 8b‧‧‧10th on-off valve (exhaust on-off valve)

8c‧‧‧第11開關閥(排氣路開關閥) 8c‧‧‧Eleventh on-off valve (exhaust on-off valve)

8d‧‧‧第12開關閥(排氣路開關閥) 8d‧‧‧12th on-off valve (exhaust on-off valve)

9‧‧‧連通配管(連通流路) 9‧‧‧Connecting piping (connecting flow path)

9a‧‧‧第1連通部 9a‧‧‧The first connection

9b‧‧‧第2連通部 9b‧‧‧The second connection

9c‧‧‧第3連通部 9c‧‧‧The third connection

9d‧‧‧第4連通部 9d‧‧‧The fourth connection

10a‧‧‧第13開關閥(連通路開關閥) 10a‧‧‧th thirteenth on-off valve (communicating on-off valve)

10b‧‧‧第14開關閥(連通路開關閥) 10b‧‧‧14th on-off valve (communicating on-off valve)

10c‧‧‧第15開關閥(連通路開關閥) 10c‧‧‧The 15th on-off valve (communicating on-off valve)

10d‧‧‧第16開關閥(連通路開關閥) 10d‧‧‧16th on-off valve (communicating on-off valve)

11a‧‧‧第17開關閥(連通路開關閥) 11a‧‧‧17th on-off valve (communicating on-off valve)

11b‧‧‧第18開關閥(連通路開關閥) 11b‧‧‧18th on-off valve (communicating on-off valve)

11c‧‧‧第19開關閥(連通路開關閥) 11c‧‧‧19th on-off valve (communicating on-off valve)

11d‧‧‧第20開關閥(連通路開關閥) 11d‧‧‧20th on-off valve (communicating on-off valve)

12a‧‧‧第21開關閥(連通路開關閥) 12a‧‧‧21st on-off valve (communicating on-off valve)

12b‧‧‧第22開關閥(連通路開關閥) 12b‧‧‧22th on-off valve (communicating on-off valve)

12c‧‧‧第23開關閥(連通路開關閥) 12c‧‧‧ 23rd on-off valve (communicating on-off valve)

12d‧‧‧第24開關閥(連通路開關閥) 12d‧‧‧24th on-off valve (communicating on-off valve)

14‧‧‧第25開關閥(連通路開關閥) 14‧‧‧25th on-off valve (communicating on-off valve)

15‧‧‧第1流量控制閥 15‧‧‧The first flow control valve

16‧‧‧第26開關閥(連通路開關閥) 16‧‧‧26th on-off valve (communicating on-off valve)

17‧‧‧第2流量控制閥 17‧‧‧ 2nd flow control valve

18‧‧‧第3流量控制閥 18‧‧‧ Third flow control valve

20‧‧‧控制裝置 20‧‧‧Control device

21‧‧‧流量感測器 21‧‧‧Flow sensor

22‧‧‧緩衝槽 22‧‧‧Buffer tank

22a‧‧‧儲藏量感測器 22a‧‧‧Storage sensor

23‧‧‧壓縮機 23‧‧‧Compressor

24‧‧‧濃度感測器 24‧‧‧Concentration sensor

25‧‧‧第4流量控制閥 25‧‧‧ 4th flow control valve

26‧‧‧壓力調節閥 26‧‧‧pressure regulating valve

27a‧‧‧壓力感測器 27a‧‧‧pressure sensor

27b‧‧‧壓力感測器 27b‧‧‧pressure sensor

27c‧‧‧壓力感測器 27c‧‧‧pressure sensor

27d‧‧‧壓力感測器 27d‧‧‧pressure sensor

28‧‧‧輸入裝置 28‧‧‧Input device

29‧‧‧輸出裝置 29‧‧‧Output device

41‧‧‧第1再利用配管(再利用流路) 41‧‧‧The first reuse piping (reuse flow path)

42‧‧‧第1切換閥 42‧‧‧First switching valve

43‧‧‧第2再利用配管(再利用流路) 43‧‧‧The second reuse piping (reuse flow path)

44‧‧‧第1釋出用配管 44‧‧‧The first release piping

44'‧‧‧第2釋出用配管 44'‧‧‧ 2nd release piping

45‧‧‧第2切換閥 45‧‧‧ 2nd switching valve

46‧‧‧第3再利用配管(再利用流路) 46‧‧‧The third reuse piping (reuse flow path)

47‧‧‧第4再利用配管(再利用流路) 47‧‧‧ 4th reuse piping (reuse flow path)

48‧‧‧第3切換閥 48‧‧‧ Third switching valve

49‧‧‧第5再利用配管(再利用流路) 49‧‧‧The fifth reuse piping (reuse flow path)

50‧‧‧真空泵 50‧‧‧Vacuum pump

G1‧‧‧原料氦氣 G1‧‧‧raw material helium

G2‧‧‧純化氦氣 G2‧‧‧Purified helium

G3‧‧‧排氣 G3‧‧‧Exhaust

G3'‧‧‧排氣 G3'‧‧‧Exhaust

G4‧‧‧氣體 G4‧‧‧gas

G4'‧‧‧內部氣體 G4'‧‧‧Internal gas

α‧‧‧純化系統 α‧‧‧Purification system

圖1係本發明之實施形態之純化系統之構成說明圖。 FIG. 1 is an explanatory diagram of the structure of a purification system according to an embodiment of the present invention.

圖2係本發明之實施形態之變壓式吸附裝置之構成說明圖。 2 is an explanatory diagram of the structure of a pressure swing type adsorption device according to an embodiment of the present invention.

圖3係本發明之實施形態之純化系統之控制裝置之說明圖。 3 is an explanatory diagram of a control device of a purification system according to an embodiment of the present invention.

圖4A係表示本發明之實施形態之變壓式吸附裝置之運轉狀態(a)~(e)的圖。 4A is a diagram showing the operating states (a) to (e) of the pressure swing adsorption device according to the embodiment of the present invention.

圖4B係表示本發明之實施形態之變壓式吸附裝置之運轉狀態(f) ~(j)的圖。 4B is a diagram showing the operating state (f) of the pressure swing adsorption device according to an embodiment of the present invention. Figure of ~(j).

圖4C係表示本發明之實施形態之變壓式吸附裝置之運轉狀態(k)~(o)的圖。 4C is a diagram showing the operating states (k) to (o) of the pressure swing adsorption device according to the embodiment of the present invention.

圖4D係表示本發明之實施形態之變壓式吸附裝置之運轉狀態(p)~(t)的圖。 4D is a diagram showing the operating states (p) to (t) of the pressure swing adsorption device according to the embodiment of the present invention.

圖5A係表示本發明之實施形態之變壓式吸附裝置之運轉狀態(a)~(e)下之吸附塔各自中之純化處理步驟與開關閥之狀態之對應關係的圖。 FIG. 5A is a diagram showing the correspondence between the purification process steps in the adsorption towers under the operating states (a) to (e) of the pressure swing adsorption device according to the embodiment of the present invention and the state of the on-off valve.

圖5B係表示本發明之實施形態之變壓式吸附裝置之運轉狀態(f)~(j)下之吸附塔各自中之純化處理步驟與開關閥之狀態之對應關係的圖。 5B is a diagram showing the correspondence between the purification process steps in the adsorption towers under the operating conditions (f) to (j) of the pressure swing adsorption device according to the embodiment of the present invention and the state of the on-off valve.

圖5C係表示本發明之實施形態之變壓式吸附裝置之運轉狀態(k)~(o)下之吸附塔各自中之純化處理步驟與開關閥之狀態之對應關係的圖。 5C is a diagram showing the correspondence between the purification process steps and the state of the on-off valve in the adsorption towers in the operating states (k) to (o) of the pressure swing adsorption device according to the embodiment of the present invention.

圖5D係表示本發明之實施形態之變壓式吸附裝置之運轉狀態(p)~(t)下之吸附塔各自中之純化處理步驟與開關閥之狀態之對應關係的圖。 FIG. 5D is a diagram showing the correspondence between the purification process steps and the state of the on-off valve in each of the adsorption towers in the operating states (p) to (t) of the pressure swing adsorption device according to the embodiment of the present invention.

圖1所示之本發明之實施形態之氦氣之純化系統α具備用以對包含雜質氣體之原料氦氣G1進行純化之變壓式吸附裝置1。如圖2所示,變壓式吸附裝置1具有複數個吸附塔2a、2b、2c、2d。於本實施形態中,設置第1~第4吸附塔2a、2b、2c、2d,且於各吸附塔2a、2b、2c、2d之一端與另一端形成有氣體通過口2a'、2b'、2c'、2d'、2a"、2b"、2c"、2d"。 The helium purification system α of the embodiment of the present invention shown in FIG. 1 includes a pressure swing type adsorption device 1 for purifying a raw material helium gas G1 containing an impurity gas. As shown in FIG. 2, the pressure swing adsorption apparatus 1 has a plurality of adsorption towers 2a, 2b, 2c, and 2d. In this embodiment, the first to fourth adsorption towers 2a, 2b, 2c, 2d are provided, and gas passage ports 2a', 2b' are formed at one end and the other end of each adsorption tower 2a, 2b, 2c, 2d, 2c', 2d', 2a", 2b", 2c", 2d".

於各吸附塔2a、2b、2c、2d中,收納優先於氦氣而吸附雜質氣體之吸附劑。該吸附劑只要為可優先於氦氣而吸附雜質氣體者,則並無 特別限定,例如可使用活性碳、合成沸石、碳分子篩、氧化鋁凝膠等。 In each adsorption tower 2a, 2b, 2c, and 2d, an adsorbent that adsorbs impurity gas in preference to helium gas is stored. As long as the adsorbent is capable of adsorbing impurity gases in preference to helium, there is no Specifically limited, for example, activated carbon, synthetic zeolite, carbon molecular sieve, alumina gel, etc. can be used.

如圖2所示,原料氣體導入配管3、純化氣體配管4、及排氣配管5與吸附塔2a、2b、2c、2d各者連接。 As shown in FIG. 2, the raw material gas introduction piping 3, the purified gas piping 4, and the exhaust piping 5 are connected to each of the adsorption towers 2a, 2b, 2c, and 2d.

原料氣體導入配管3之一端與原料氦氣G1之供給源、例如光纖製造裝置連接。原料氣體導入配管3之另一端以朝向第1~第4吸附塔2a、2b、2c、2d之方式進行4分支,並經由構成原料氣體導入路開關閥之第1~第4開關閥6a、6b、6c、6d而與吸附塔2a、2b、2c、2d各者之一端之氣體通過口2a'、2b'、2c'、2d'連接。藉此,原料氣體導入配管3構成用以向吸附塔2a、2b、2c、2d各者導入原料氦氣G1之原料氣體導入流路。又,藉由第1~第4開關閥6a、6b、6c、6d,將吸附塔2a、2b、2c、2d各者與原料氣體導入流路之間個別地進行開關,藉此可經由原料氣體導入流路向吸附塔2a、2b、2c、2d各者個別地導入原料氦氣G1。 One end of the raw material gas introduction piping 3 is connected to a supply source of raw material helium gas G1, for example, an optical fiber manufacturing apparatus. The other end of the raw material gas introduction piping 3 is branched toward the first to fourth adsorption towers 2a, 2b, 2c, 2d, and passes through the first to fourth on-off valves 6a, 6b constituting the on-off valve of the raw gas introduction path , 6c, 6d, and the gas at one end of each of the adsorption towers 2a, 2b, 2c, 2d is connected through the ports 2a', 2b', 2c', 2d'. Thereby, the raw material gas introduction piping 3 constitutes a raw material gas introduction flow path for introducing the raw material helium gas G1 to each of the adsorption towers 2a, 2b, 2c, and 2d. Moreover, each of the adsorption towers 2a, 2b, 2c, 2d and the raw material gas introduction flow path are individually switched by the first to fourth on-off valves 6a, 6b, 6c, 6d, whereby the raw material gas can be passed The introduction flow path individually introduces the raw material helium gas G1 to each of the adsorption towers 2a, 2b, 2c, and 2d.

原料氦氣G1為氦氣與雜質氣體之混合氣體。較佳為導入至吸附塔2a、2b、2c、2d各者中之原料氦氣G1之氦濃度為15vol%以上。於本實施形態中,自供給源供給之原料氦氣G1係設為濃度、流量進行變動者。例如,原料氦氣G1係包含空氣作為雜質氣體之稀薄氦氣,於氦濃度為30vol%時,空氣濃度為70vol%,氦濃度於15~70vol%之間變動,氦氣流量於10~100Nm3/h之間變動。 The raw material helium gas G1 is a mixed gas of helium gas and impurity gas. The helium concentration of the raw material helium gas G1 introduced into each of the adsorption towers 2a, 2b, 2c, and 2d is preferably 15 vol% or more. In the present embodiment, the raw material helium gas G1 supplied from the supply source is defined as a one whose concentration and flow rate vary. For example, the raw material helium gas G1 is a thin helium gas containing air as an impurity gas. When the helium concentration is 30 vol%, the air concentration is 70 vol%, the helium concentration varies from 15 to 70 vol%, and the helium flow rate is 10 to 100 Nm 3 Change between /h.

純化氣體配管4之一端以朝向第1~第4吸附塔2a、2b、2c、2d之方式進行4分支,並經由構成純化氣體路開關閥之第5~第8開關閥7a、7b、7c、7d而與吸附塔2a、2b、2c、2d各者之另一端之氣體通過口2a"、2b"、2c"、2d"連接。純化氣體配管4之另一端係設為純化氦氣G2之出口。藉此,純化氣體配管4構成用以自吸附塔2a、2b、2c、2d各者排出純化氦氣G2之純化氣體流路。又,藉由第5~第8開關閥 7a、7b、7c、7d,將吸附塔2a、2b、2c、2d各者與純化氣體流路之間個別地進行開關,藉此可自吸附塔2a、2b、2c、2d各者個別地排出純化氦氣G2並加以回收。所回收之純化氦氣G2之用途並無限定。 One end of the purified gas piping 4 is branched toward the first to fourth adsorption towers 2a, 2b, 2c, and 2d, and passes through the fifth to eighth switching valves 7a, 7b, and 7c that constitute the purified gas path switching valve. 7d, the gas at the other end of each of the adsorption towers 2a, 2b, 2c, 2d is connected through the ports 2a", 2b", 2c", 2d". The other end of the purified gas piping 4 is set as the outlet of the purified helium gas G2. Thereby, the purified gas piping 4 constitutes a purified gas flow path for discharging the purified helium gas G2 from each of the adsorption towers 2a, 2b, 2c, and 2d. Also, with the 5th to 8th on-off valves 7a, 7b, 7c, 7d, each of the adsorption towers 2a, 2b, 2c, 2d and the purified gas flow path are individually switched, whereby each of the adsorption towers 2a, 2b, 2c, 2d can be discharged individually The helium gas G2 is purified and recovered. The use of the recovered purified helium gas G2 is not limited.

於純化氣體配管4之另一端設置有背壓調節用之壓力調節閥26,藉此,可將吸附塔2a、2b、2c、2d各者中之內部壓力調節為於吸附步驟中預先決定之吸附壓力。 A pressure regulating valve 26 for back pressure regulation is provided at the other end of the purified gas piping 4, whereby the internal pressure in each of the adsorption towers 2a, 2b, 2c, 2d can be adjusted to the adsorption determined in advance in the adsorption step pressure.

排氣配管5之一端以朝向第1~第4吸附塔2a、2b、2c、2d之方式進行4分支,並經由構成排氣路開關閥之第9~第12開關閥8a、8b、8c、8d而與氣體通過口2a'、2b'、2c'、2d'連接。排氣配管5之另一端係設為排氣G3、G3'之出口。藉此,排氣配管5構成用以自吸附塔2a、2b、2c、2d各者排出排氣G3、G3'之排氣流路。又,藉由第9~第12開關閥8a、8b、8c、8d,將吸附塔2a、2b、2c、2d各者與排氣流路之間個別地進行開關,藉此可自吸附塔2a、2b、2c、2d各者個別地排出排氣G3、G3'。 One end of the exhaust pipe 5 is branched toward the first to fourth adsorption towers 2a, 2b, 2c, and 2d, and passes through the ninth to twelfth switching valves 8a, 8b, and 8c that constitute the exhaust path switching valve. 8d is connected to the gas through the ports 2a', 2b', 2c', 2d'. The other end of the exhaust pipe 5 is set as the outlet of the exhaust gas G3, G3'. Thereby, the exhaust piping 5 constitutes an exhaust flow path for exhausting the exhaust gas G3, G3' from each of the adsorption towers 2a, 2b, 2c, 2d. In addition, the ninth to twelfth on-off valves 8a, 8b, 8c, and 8d are used to individually switch the adsorption towers 2a, 2b, 2c, and 2d and the exhaust gas flow path, thereby enabling self-adsorption tower 2a , 2b, 2c, and 2d individually exhaust the exhaust gases G3, G3'.

於與排氣配管5連接之第1再利用配管41中,設置有流量調節用之第3流量控制閥18。藉此,可將吸附塔2a、2b、2c、2d各者中之內部壓力調節為設定壓力。又,於排放壓力脫附步驟中,能夠以排氣G3具有預先決定之壓力之方式進行調節。 The first reuse pipe 41 connected to the exhaust pipe 5 is provided with a third flow control valve 18 for flow adjustment. With this, the internal pressure in each of the adsorption towers 2a, 2b, 2c, and 2d can be adjusted to the set pressure. In addition, in the discharge pressure desorption step, it can be adjusted such that the exhaust gas G3 has a predetermined pressure.

設置有構成用以使吸附塔2a、2b、2c、2d之任一者與另外任一者相互連通之連通流路之連通配管9。連通配管9具有第1連通部9a、第2連通部9b、第3連通部9c、及第4連通部9d。第1連通部9a之一端以朝向第1~第4吸附塔2a、2b、2c、2d之方式進行4分支,並經由構成連通路開關閥之第13~第16開關閥10a、10b、10c、10d而與氣體通過口2a"、2b"、2c"、2d"連接。第2連通部9b之一端以朝向第1~第4吸附塔2a、2b、2c、2d之方式進行4分支,並經由構成連通路開關閥之第17~第20開關閥11a、11b、11c、11d而與氣體通過口2a"、2b"、2c"、 2d"連接。第3連通部9c之一端以朝向第1~第4吸附塔2a、2b、2c、2d之方式進行4分支,並經由構成連通路開關閥之第21~第24開關閥12a、12b、12c、12d而與氣體通過口2a"、2b"、2c"、2d"連接。第2連通部9b之另一端與第3連通部9c之另一端係經由構成連通路開關閥之第25開關閥14、及構成調節於連通流路中流動之氣體流量之流量控制閥之第1流量控制閥15而相互連接。第4連通部9d之一端經由構成連通路開關閥之第26開關閥16、及構成調節於連通流路中流動之氣體流量之流量控制閥之第2流量控制閥17而與第1連通部9a之另一端連接。第4連通部9d之另一端與純化氣體配管4連接。因此,藉由第13~第26開關閥10a、10b、10c、10d、11a、11b、11c、11d、12a、12b、12c、12d、14、16,將吸附塔2a、2b、2c、2d各者與連通流路之間個別地進行開關,藉此可將吸附塔2a、2b、2c、2d之任一者與另外任一者切換成相互之間開放而相互連通之狀態、及相互之間封閉而不連通之狀態。 There is provided a communication pipe 9 that constitutes a communication flow path that allows any one of the adsorption towers 2a, 2b, 2c, and 2d to communicate with each other. The communication pipe 9 has a first communication portion 9a, a second communication portion 9b, a third communication portion 9c, and a fourth communication portion 9d. One end of the first communication portion 9a is divided into four branches toward the first to fourth adsorption towers 2a, 2b, 2c, and 2d, and passes through the thirteenth to sixteenth on-off valves 10a, 10b, and 10c constituting the on-off valve of the communication path. 10d is connected to the gas through the ports 2a", 2b", 2c", 2d". One end of the second communication portion 9b is divided into four branches so as to face the first to fourth adsorption towers 2a, 2b, 2c, and 2d, and passes through the 17th to 20th switching valves 11a, 11b, and 11c that constitute the communication path switching valve. 11d and gas through the port 2a", 2b", 2c", 2d" connection. One end of the third communication portion 9c is branched toward the first to fourth adsorption towers 2a, 2b, 2c, and 2d, and passes through the 21st to 24th switching valves 12a, 12b, 12c, and 12d are connected to the gas passage ports 2a", 2b", 2c", and 2d". The other end of the second communication portion 9b and the other end of the third communication portion 9c pass through the 25th The on-off valve 14 and the first flow control valve 15 that constitutes the flow control valve that regulates the flow rate of the gas flowing in the communication channel are connected to each other. One end of the fourth communication portion 9d passes through the 26th switching valve 16 that constitutes the communication channel on-off valve And a second flow control valve 17 constituting a flow control valve that regulates the flow rate of the gas flowing in the communication channel is connected to the other end of the first communication portion 9a. The other end of the fourth communication portion 9d is connected to the purified gas piping 4 Therefore, the adsorption towers 2a, 2b, 2c, 2d will be replaced by the 13th to 26th switching valves 10a, 10b, 10c, 10d, 11a, 11b, 11c, 11d, 12a, 12b, 12c, 12d, 14, 16 Switching between each of them and the communication channel individually can switch any one of the adsorption towers 2a, 2b, 2c, 2d and any other into an open and mutually connected state, and each other The room is closed but not connected.

第1~第26開關閥6a、6b、6c、6d、7a、7b、7c、7d、8a、8b、8c、8d、10a、10b、10c、10d、11a、11b、11c、11d、12a、12b、12c、12d、14、16各者包含公知之自動閥,且具有用以使閥作動之螺線管、馬達等開關用致動器。如圖3所示,各開關閥與構成純化系統α之控制裝置20連接,且由控制裝置20所控制,藉此可個別地進行開關動作。控制裝置20可包含電腦。 1st to 26th on-off valves 6a, 6b, 6c, 6d, 7a, 7b, 7c, 7d, 8a, 8b, 8c, 8d, 10a, 10b, 10c, 10d, 11a, 11b, 11c, 11d, 12a, 12b Each of 12c, 12d, 14, 16 includes a well-known automatic valve, and has a switching actuator such as a solenoid and a motor for actuating the valve. As shown in FIG. 3, each on-off valve is connected to the control device 20 constituting the purification system α, and is controlled by the control device 20, whereby the switching operation can be performed individually. The control device 20 may include a computer.

第1、第2、第3流量控制閥15、17、18各者包含公知之自動閥,且具有用以使閥作動之馬達等流量調節用致動器。如圖3所示,各流量控制閥與控制裝置20連接,並由控制裝置20所控制,藉此可個別地進行流量調節動作。壓力調節閥26包含公知之自動閥,且具有用以使閥作動之馬達等壓力調節用致動器。如圖3所示,壓力調節閥26與控制裝置20連接,並由控制裝置20所控制,藉此可個別地進行壓力調節 動作。 Each of the first, second, and third flow control valves 15, 17, and 18 includes a known automatic valve, and has an actuator for adjusting the flow rate such as a motor for actuating the valve. As shown in FIG. 3, each flow control valve is connected to the control device 20 and controlled by the control device 20, whereby the flow adjustment operation can be individually performed. The pressure regulating valve 26 includes a known automatic valve, and has a pressure regulating actuator such as a motor for actuating the valve. As shown in FIG. 3, the pressure regulating valve 26 is connected to the control device 20 and controlled by the control device 20, whereby the pressure can be adjusted individually action.

於原料氣體導入配管3中,設置有:流量感測器21,其檢測自供給源供給之原料氦氣G1之流量;緩衝槽22,其暫時貯存原料氦氣G1;感測器22a,其係緩衝槽22之儲藏量測定用;壓縮機23;濃度感測器24,其檢測導入至吸附塔2a、2b、2c、2d中之原料氦氣G1之氦濃度;及第4流量控制閥25,其係自原料氣體導入配管3導入至各吸附塔2a、2b、2c、2d中之原料氦氣G1之流量調節用。緩衝槽22內係設為較處於排放壓力脫附步驟末期及洗淨步驟末期之各吸附塔2a、2b、2c、2d之內部低壓且大氣壓以上之壓力。壓縮機23吸引原料氦氣G1而升壓至預先決定之壓力、例如0.8~0.9MPa(表壓)。導入至吸附塔2a、2b、2c、2d各者中之原料氦氣G1之溫度例如設為0~40℃。第4流量控制閥25包含公知之自動閥,且具有用以使閥作動之馬達等流量調節用致動器。 The raw material gas introduction piping 3 is provided with: a flow sensor 21 which detects the flow rate of the raw material helium gas G1 supplied from the supply source; a buffer tank 22 which temporarily stores the raw material helium gas G1; and a sensor 22a which is For storage capacity measurement of the buffer tank 22; compressor 23; concentration sensor 24, which detects the helium concentration of the raw material helium gas G1 introduced into the adsorption towers 2a, 2b, 2c, 2d; and the fourth flow control valve 25, It is used to adjust the flow rate of the raw material helium gas G1 introduced from the raw material gas introduction pipe 3 to each adsorption tower 2a, 2b, 2c, 2d. The inside of the buffer tank 22 is set to a pressure lower than the internal pressure of each adsorption tower 2a, 2b, 2c, 2d at the end of the discharge pressure desorption step and the end of the washing step and above atmospheric pressure. The compressor 23 sucks the raw material helium gas G1 and boosts it to a predetermined pressure, for example, 0.8 to 0.9 MPa (gauge pressure). The temperature of the raw material helium gas G1 introduced into each of the adsorption towers 2a, 2b, 2c, and 2d is, for example, 0 to 40°C. The fourth flow control valve 25 includes a known automatic valve, and has an actuator for adjusting the flow rate such as a motor for actuating the valve.

第1再利用配管41之一端與排氣配管5連接,第1再利用配管41之另一端與第1切換閥42連接。第1切換閥42使第1再利用配管41選擇性地與第2再利用配管43之一端及第1釋出用配管44之一端連接。第1釋出用配管44之另一端與大氣壓下之常壓空間相通。第2再利用配管43之另一端與第2切換閥45連接。第2切換閥45使第2再利用配管43選擇性地與第3再利用配管46之一端及第4再利用配管47之一端連接。第3再利用配管46之另一端與緩衝槽22連接。第4再利用配管47之另一端與第3切換閥48連接。第3切換閥48使第4再利用配管47選擇性地與第5再利用配管49之一端及第2釋出用配管44'之一端連接。第5再利用配管49之另一端與緩衝槽22連接,第2釋出用配管44'之另一端與大氣壓下之常壓空間相通。於第4再利用配管47之中部設置有真空泵50。藉此,可使用第1~第3切換閥42、45、48,將排氣流路切換成不經由真空泵50而與緩衝槽22相通之狀態、經由真空泵50而與緩衝槽22相通之 狀態、經由第1釋出用配管44而與常壓空間相通之狀態、經由第2釋出用配管44'而與常壓空間相通之狀態。再者,亦可將第1~第3切換閥設為與42、45、48控制裝置20連接之自動閥,由控制裝置20控制動作。又,亦可使真空泵50與控制裝置20連接,由控制裝置20控制動作。 One end of the first reuse pipe 41 is connected to the exhaust pipe 5, and the other end of the first reuse pipe 41 is connected to the first switching valve 42. The first switching valve 42 selectively connects the first reuse pipe 41 to one end of the second reuse pipe 43 and one end of the first discharge pipe 44. The other end of the first release piping 44 communicates with the atmospheric space under atmospheric pressure. The other end of the second reuse pipe 43 is connected to the second switching valve 45. The second switching valve 45 selectively connects the second reuse pipe 43 to one end of the third reuse pipe 46 and one end of the fourth reuse pipe 47. The other end of the third reuse pipe 46 is connected to the buffer tank 22. The other end of the fourth reuse pipe 47 is connected to the third switching valve 48. The third switching valve 48 selectively connects the fourth reuse pipe 47 to one end of the fifth reuse pipe 49 and one end of the second discharge pipe 44'. The other end of the fifth reuse pipe 49 is connected to the buffer tank 22, and the other end of the second release pipe 44' communicates with the atmospheric space under atmospheric pressure. A vacuum pump 50 is provided in the middle of the fourth reuse piping 47. In this way, the first to third switching valves 42, 45, and 48 can be used to switch the exhaust gas flow path to the state of communicating with the buffer tank 22 without passing through the vacuum pump 50, and the communication with the buffer tank 22 via the vacuum pump 50. The state, the state of communicating with the normal pressure space through the first release pipe 44, and the state of communicating with the normal pressure space through the second release pipe 44 ′. In addition, the first to third switching valves may be automatic valves connected to the control devices 20 of 42, 45, and 48, and the control device 20 may control the operation. In addition, the vacuum pump 50 may be connected to the control device 20, and the control device 20 may control the operation.

第1~第5再利用配管41、43、46、47、49構成用以將經由排氣流路緩衝槽22而與原料氣體導入流路連接之再利用流路。藉此,可向原料氦氣G1之向吸附塔2a、2b、2c、2d各者之導入流路中導入排氣G3、G3',並將排氣G3、G3'混入至原料氦氣G1中。即,可再利用排氣G3、G3'作為原料氦氣G1。排氣G3、G3'亦可釋出至常壓空間。 The first to fifth reuse pipes 41, 43, 46, 47, and 49 constitute a reuse flow path for connecting the raw material gas introduction flow path through the exhaust flow path buffer tank 22. Thereby, the exhaust gas G3, G3' can be introduced into the introduction flow path of the raw material helium gas G1 to each of the adsorption towers 2a, 2b, 2c, 2d, and the exhaust gas G3, G3' can be mixed into the raw material helium gas G1 . That is, the exhaust gas G3, G3' can be reused as the raw material helium gas G1. Exhaust gas G3, G3' can also be released to atmospheric space.

如圖3所示,流量感測器21、儲藏量測定用感測器22a、濃度感測器24、第4流量控制閥25係與控制裝置20連接。又,檢測吸附塔2a、2b、2c、2d各者之內部壓力之壓力感測器27a、27b、27c、27d、鍵盤等輸入裝置28、監視器等輸出裝置29係與控制裝置20相連接。 As shown in FIG. 3, the flow rate sensor 21, the storage amount measurement sensor 22 a, the concentration sensor 24, and the fourth flow rate control valve 25 are connected to the control device 20. In addition, a pressure sensor 27a, 27b, 27c, 27d, an input device 28 such as a keyboard, and an output device 29 such as a monitor are connected to the control device 20 to detect the internal pressure of each of the adsorption towers 2a, 2b, 2c, and 2d.

藉由將原料氦氣G1暫時地貯存於緩衝槽22中,可緩和原料氦氣G1之組成變動與流量變動。緩衝槽22較佳為包含根據儲藏氣體量而進行變形之氣球,以使容量可變。又,藉由利用來自控制裝置20之信號控制第4流量控制閥25而進行流量調節動作,調節導入至各吸附塔2a、2b、2c、2d中之原料氦氣G1之流量。藉此,導入至各吸附塔2a、2b、2c、2d中之原料氦氣G1之流量於通常時係以與流量感測器21之檢測流量一致之方式加以控制。以於由感測器22a所檢測到之緩衝槽22之儲藏氣體量超過上限設定值時,儲藏氣體量減少之方式,將導入至各吸附塔2a、2b、2c、2d中之原料氦氣G1之流量設為多於流量感測器21之檢測流量者。以於由感測器22a所檢測到之緩衝槽22之儲藏氣體量未達下限設定值時,儲藏氣體量增加之方式,將導入至各吸附塔2a、2b、2c、2d中之原料氦氣G1之流量設為少於流量感測器21之檢測 流量者。 By temporarily storing the raw material helium gas G1 in the buffer tank 22, the composition change and the flow rate change of the raw material helium gas G1 can be alleviated. The buffer tank 22 preferably includes a balloon deformed according to the amount of stored gas to make the capacity variable. In addition, the fourth flow control valve 25 is controlled by a signal from the control device 20 to perform a flow adjustment operation to adjust the flow rate of the raw material helium gas G1 introduced into each adsorption tower 2a, 2b, 2c, and 2d. As a result, the flow rate of the raw material helium gas G1 introduced into the adsorption towers 2a, 2b, 2c, and 2d is normally controlled to be consistent with the detection flow rate of the flow sensor 21. When the amount of stored gas in the buffer tank 22 detected by the sensor 22a exceeds the upper limit setting value, the raw material helium gas G1 introduced into each adsorption tower 2a, 2b, 2c, 2d is reduced The flow rate is set to be more than the flow rate detected by the flow sensor 21. When the amount of stored gas in the buffer tank 22 detected by the sensor 22a does not reach the lower limit setting value, the raw material helium gas introduced into each adsorption tower 2a, 2b, 2c, 2d is increased The flow rate of G1 is set to be less than the detection of the flow sensor 21 Trafficker.

為了使用變壓式吸附裝置1進行原料氦氣G1之純化,而依序向吸附塔2a、2b、2c、2d各者導入原料氦氣G1。於吸附塔2a、2b、2c、2d各者中,反覆進行依序實行複數個純化處理步驟之純化處理循環。 In order to purify the raw material helium gas G1 using the pressure swing adsorption apparatus 1, the raw material helium gas G1 is introduced to each of the adsorption towers 2a, 2b, 2c, and 2d in order. In each of the adsorption towers 2a, 2b, 2c, and 2d, a purification process cycle in which a plurality of purification process steps are sequentially performed is repeatedly performed.

於本實施形態中,作為構成變壓式吸附裝置1中之純化處理循環之1個循環之複數個純化處理步驟,依序實行吸附步驟、第1氣體吹送步驟、減壓步驟、第2氣體吹送步驟、脫附步驟、洗淨步驟、第2氣體導入步驟、第1氣體導入步驟、及升壓步驟。本實施形態之脫附步驟係實行排放壓力脫附步驟與真空脫附步驟者,但亦可為僅實行真空脫附步驟者。於本實施形態中,於第2氣體導入步驟與第1氣體導入步驟之間設置有待機狀態,但根據各步驟所需之時間亦可不存在待機狀態。各純化處理步驟之實行時間只要根據所需之純化氦氣G2之純度或回收率,預先藉由實驗求出並設定即可。吸附塔2a、2b、2c、2d各者中之純化處理步驟之實行時點相互不同。藉此,於變壓式吸附裝置1中,如圖4A~圖4D所示,依序實現吸附塔2a、2b、2c、2d各者中之純化處理步驟相互不同之運轉狀態(a)~(t),且連續地排出純化氦氣G2。圖4A~圖4D中之箭頭表示氣體之流動方向。 In this embodiment, as a plurality of purification processing steps constituting one cycle of the purification processing cycle in the pressure swing adsorption apparatus 1, the adsorption step, the first gas blowing step, the depressurizing step, and the second gas blowing are sequentially performed Step, desorption step, cleaning step, second gas introduction step, first gas introduction step, and pressure increase step. The desorption step of the present embodiment is a discharge pressure desorption step and a vacuum desorption step, but it may also be a vacuum desorption step. In the present embodiment, a standby state is provided between the second gas introduction step and the first gas introduction step, but the standby state may not exist according to the time required for each step. The execution time of each purification treatment step may be determined in advance through experiments and set according to the required purity or recovery rate of the purified helium gas G2. The purification treatment steps in each of the adsorption towers 2a, 2b, 2c, and 2d are performed at different time points. In this way, in the pressure swing adsorption device 1, as shown in FIGS. 4A to 4D, the operation states (a) of the purification treatment steps in each of the adsorption towers 2a, 2b, 2c, and 2d are different from each other in sequence (a) to ( t), and continuously purify the purified helium gas G2. The arrows in FIGS. 4A-4D indicate the direction of gas flow.

於變壓式吸附裝置1中,為了依序實行純化處理步驟,而由控制裝置20分別控制第1~第26開關閥6a、6b、6c、6d、7a、7b、7c、7d、8a、8b、8c、8d、10a、10b、10c、10d、11a、11b、11c、11d、12a、12b、12c、12d、14、16、第1、第2流量控制閥15、17。圖5A~圖5D表示於變壓式吸附裝置1之運轉狀態(a)~(i)下之吸附塔2a、2b、2c、2d各者中實行之純化處理步驟、與第1~第26開關閥各者之狀態之對應關係,○符號表示開關閥之打開狀態,×符號表示開關閥之關閉狀態。 In the pressure swing adsorption device 1, in order to sequentially perform the purification process, the control device 20 controls the first to 26th on-off valves 6a, 6b, 6c, 6d, 7a, 7b, 7c, 7d, 8a, 8b , 8c, 8d, 10a, 10b, 10c, 10d, 11a, 11b, 11c, 11d, 12a, 12b, 12c, 12d, 14, 16, first and second flow control valves 15, 17. 5A to 5D show the purification process steps and the 1st to 26th switches performed in each of the adsorption towers 2a, 2b, 2c, and 2d in the operating state (a) to (i) of the pressure swing adsorption device 1. Correspondence between the states of the valves, the ○ symbol indicates the open state of the on-off valve, and the X symbol indicates the closed state of the on-off valve.

於運轉狀態(a)下,第1、第5、第11、第18、第24、第25開關閥 6a、7a、8c、11b、12d、14被打開,其餘之開關閥被關閉。藉由第1、第5開關閥6a、7a被打開,於第1吸附塔2a中實行吸附步驟。藉由第11、第24、第25開關閥11b、12d、14被打開,於第2吸附塔2b中實行第1氣體導入步驟,且於第4吸附塔2d中實行第1氣體吹送步驟。藉由第18開關閥8c被打開,於第3吸附塔2c中實行脫附步驟。此處,第3吸附塔2c係設為與真空泵50相通者,第3吸附塔2c中之脫附步驟係設為真空脫附步驟。 In the operating state (a), the 1st, 5th, 11th, 18th, 24th, 25th on-off valves 6a, 7a, 8c, 11b, 12d, 14 are opened, and the remaining on-off valves are closed. When the first and fifth on-off valves 6a and 7a are opened, the adsorption step is performed in the first adsorption tower 2a. When the 11th, 24th, and 25th on-off valves 11b, 12d, and 14 are opened, the first gas introduction step is performed in the second adsorption tower 2b, and the first gas blowing step is performed in the fourth adsorption tower 2d. When the 18th on-off valve 8c is opened, the desorption step is performed in the third adsorption tower 2c. Here, the third adsorption tower 2c is set to communicate with the vacuum pump 50, and the desorption step in the third adsorption tower 2c is set to a vacuum desorption step.

於運轉狀態(b)下,第1、第5、第11、第14、第19、第24、第25、第26開關閥6a、7a、8c、10b、11c、12d、14、16被打開,其餘之開關閥被關閉。藉由第1、第5、第14、第26開關閥6a、7a、10b、16被打開,於第1吸附塔2a中繼運轉狀態(a)之後實行吸附步驟,且於第2吸附塔2b中實行升壓步驟。藉由第11、第19、第24、第25開關閥8c、11c、12d、14被打開,於第3吸附塔2c中實行洗淨步驟,且於第4吸附塔2d中實行減壓步驟。此處,第3吸附塔2c係設為與真空泵50相通者,於洗淨步驟中排出之排氣G3'被真空泵50所吸引。 In the operating state (b), the first, fifth, eleventh, fourteenth, nineteenth, twenty-fourth, twenty-fifth, twenty-sixth on-off valves 6a, 7a, 8c, 10b, 11c, 12d, 14, 16 are opened , The rest of the on-off valve is closed. The first, fifth, 14th, and 26th on-off valves 6a, 7a, 10b, and 16 are opened, and the adsorption step is performed after the first adsorption tower 2a is in the relay operation state (a), and in the second adsorption tower 2b. The step-up step is carried out. When the 11th, 19th, 24th, and 25th on-off valves 8c, 11c, 12d, and 14 are opened, a washing step is performed in the third adsorption tower 2c, and a depressurization step is performed in the fourth adsorption tower 2d. Here, the third adsorption tower 2c is set to communicate with the vacuum pump 50, and the exhaust gas G3′ discharged in the washing step is sucked by the vacuum pump 50.

於運轉狀態(c)下,第1、第5、第14、第19、第24、第25、第26開關閥6a、7a、10b、11c、12d、14、16被打開,其餘之開關閥被關閉。藉由第1、第5、第14、第26開關閥6a、7a、10b、16被打開,於第1吸附塔2a中繼運轉狀態(b)之後實行吸附步驟,且於第2吸附塔2b中繼運轉狀態(b)之後實行升壓步驟。藉由第19、第24、第25開關閥11c、12d、14被打開,於第3吸附塔2c中實行第2氣體導入步驟,且於第4吸附塔2d中實行第2氣體吹送步驟。此處,真空泵50由於不需要,故而亦可停止。 In the operating state (c), the first, fifth, 14th, 19th, 24th, 25th, 26th on-off valves 6a, 7a, 10b, 11c, 12d, 14, 16 are opened, and the remaining on-off valves is closed. The first, fifth, 14th, and 26th on-off valves 6a, 7a, 10b, and 16 are opened, and the adsorption step is performed after the first adsorption tower 2a is in the relay operation state (b), and in the second adsorption tower 2b. After the relay operation state (b), a step-up step is performed. When the 19th, 24th, and 25th on-off valves 11c, 12d, and 14 are opened, the second gas introduction step is performed in the third adsorption tower 2c, and the second gas blowing step is performed in the fourth adsorption tower 2d. Here, since the vacuum pump 50 is unnecessary, it may be stopped.

於運轉狀態(d)下,第1、第5、第12、第14、第26開關閥6a、7a、8d、10b、16被打開,其餘之開關閥被關閉。藉由第1、第5、第14、第26開關閥6a、7a、10b、16被打開,於第1吸附塔2a中繼運轉狀 態(c)之後實行吸附步驟,且於第2吸附塔2b中繼運轉狀態(c)之後實行升壓步驟。第3吸附塔2c係設為不實行任何純化處理步驟之待機狀態。藉由第12開關閥8d被打開,於第4吸附塔2d中實行脫附步驟。第4吸附塔2d係設為不與真空泵50相通者,第4吸附塔2d中之脫附步驟係設為排放壓力脫附步驟。此處,真空泵50由於不需要,故而亦可停止。 In the operating state (d), the first, fifth, twelfth, fourteenth, and twenty-sixth on-off valves 6a, 7a, 8d, 10b, and 16 are opened, and the remaining on-off valves are closed. The first, fifth, 14th, and 26th on-off valves 6a, 7a, 10b, and 16 are opened, and relay operation is performed on the first adsorption tower 2a. After the state (c), the adsorption step is performed, and after the second adsorption tower 2b relay operation state (c), the boosting step is performed. The third adsorption tower 2c is set to a standby state without performing any purification process steps. By opening the 12th on-off valve 8d, the desorption step is performed in the 4th adsorption tower 2d. The fourth adsorption tower 2d is assumed not to communicate with the vacuum pump 50, and the desorption step in the fourth adsorption tower 2d is assumed to be a discharge pressure desorption step. Here, since the vacuum pump 50 is unnecessary, it may be stopped.

於運轉狀態(e)下,開關閥之開關狀態係設為與運轉狀態(d)相同。藉此,於第1吸附塔2a中繼運轉狀態(d)之後實行吸附步驟,且於第2吸附塔2b中繼運轉狀態(d)之後實行升壓步驟,第3吸附塔2c係設為待機狀態。不同於運轉狀態(d),於運轉狀態(e)下,第4吸附塔2d係設為與真空泵50相通者,第4吸附塔2d中之脫附步驟係設為真空脫附步驟。 In the operating state (e), the switching state of the on-off valve is set to be the same as the operating state (d). By this, the adsorption step is performed after the relay operation state (d) of the first adsorption tower 2a, and the boosting step is performed after the relay operation state (d) of the second adsorption tower 2b, and the third adsorption tower 2c is set to standby status. Unlike the operating state (d), in the operating state (e), the fourth adsorption tower 2d is set to communicate with the vacuum pump 50, and the desorption step in the fourth adsorption tower 2d is set to a vacuum desorption step.

於運轉狀態(f)下,第2、第6、第12、第19、第21、第25開關閥6b、7b、8d、11c、12a、14被打開,其餘之開關閥被關閉。藉由第2、第6開關閥6b、7b被打開,於第2吸附塔2b中實行吸附步驟。藉由第19、第21、第25開關閥11c、12a、14被打開,於第1吸附塔2a中實行第1氣體吹送步驟,且於第3吸附塔2c中實行第1氣體導入步驟。藉由第12開關閥8d被打開,於第4吸附塔2d中實行脫附步驟。此處,繼運轉狀態(e)之後第4吸附塔2d中之脫附步驟係設為真空脫附步驟。 In the operating state (f), the second, sixth, twelfth, nineteenth, twenty-first, and twenty-fifth on-off valves 6b, 7b, 8d, 11c, 12a, 14 are opened, and the remaining on-off valves are closed. When the second and sixth on-off valves 6b and 7b are opened, the adsorption step is performed in the second adsorption tower 2b. When the 19th, 21st, and 25th on-off valves 11c, 12a, and 14 are opened, the first gas blowing step is performed in the first adsorption tower 2a, and the first gas introduction step is performed in the third adsorption tower 2c. By opening the 12th on-off valve 8d, the desorption step is performed in the 4th adsorption tower 2d. Here, the desorption step in the fourth adsorption tower 2d following the operation state (e) is a vacuum desorption step.

於運轉狀態(g)下,第2、第6、第12、第15、第20、第21、第25、第26開關閥6b、7b、8d、10c、11d、12a、14、16被打開,其餘之開關閥被關閉。藉由第2、第6、第15、第26開關閥6b、7b、10c、16被打開,於第2吸附塔2b中繼運轉狀態(f)之後實行吸附步驟,且於第3吸附塔2c中實行升壓步驟。藉由第12、第20、第21、第25開關閥8d、11d、12a、14被打開,於第1吸附塔2a中實行減壓步驟,且於第4吸附塔2d中實行洗淨步驟。此處,第4吸附塔2d係設為與真空泵50相 通者,於洗淨步驟中排出之排氣G3'被真空泵50所吸引。 In the operating state (g), the 2nd, 6th, 12th, 15th, 20th, 21st, 25th, 26th on-off valves 6b, 7b, 8d, 10c, 11d, 12a, 14, 16 are opened , The rest of the on-off valve is closed. By the second, sixth, fifteenth, and twenty-sixth on-off valves 6b, 7b, 10c, and 16 being opened, the adsorption step is performed after the second adsorption tower 2b relay operation state (f), and the third adsorption tower 2c The step-up step is carried out. When the 12th, 20th, 21st, and 25th on-off valves 8d, 11d, 12a, and 14 are opened, a decompression step is performed in the first adsorption tower 2a, and a washing step is performed in the fourth adsorption tower 2d. Here, the fourth adsorption tower 2d is set to be in phase with the vacuum pump 50 In general, the exhaust gas G3′ discharged in the washing step is attracted by the vacuum pump 50.

於運轉狀態(h)下,第2、第6、第15、第20、第21、第25、第26開關閥6b、7b、10c、11d、12a、14、16被打開,其餘之開關閥被關閉。藉由第2、第6、第15、第26開關閥6b、7b、10c、16被打開,於第2吸附塔2b中繼運轉狀態(g)之後實行吸附步驟,且於第3吸附塔2c中繼運轉狀態(g)之後實行升壓步驟。藉由第20、第21、第25開關閥11d、12a、14被打開,於第1吸附塔2a中實行第2氣體吹送步驟,且於第4吸附塔2d中實行第2氣體導入步驟。此處,真空泵50由於不需要,故而亦可停止。 In the operating state (h), the 2nd, 6th, 15th, 20th, 21st, 25th, 26th on-off valves 6b, 7b, 10c, 11d, 12a, 14, 16 are opened, the remaining on-off valves is closed. By the second, sixth, fifteenth, and twenty-sixth on-off valves 6b, 7b, 10c, and 16 being opened, the adsorption step is performed after the second adsorption tower 2b is in the relay operation state (g), and in the third adsorption tower 2c After the relay operation state (g), a step-up step is performed. When the 20th, 21st, and 25th on-off valves 11d, 12a, and 14 are opened, the second gas blowing step is performed in the first adsorption tower 2a, and the second gas introduction step is performed in the fourth adsorption tower 2d. Here, since the vacuum pump 50 is unnecessary, it may be stopped.

於運轉狀態(i)下,第2、第6、第9、第15、第26開關閥6b、7b、8a、10c、16被打開,其餘之開關閥被關閉。藉由第2、第6、第15、第26開關閥6b、7b、10c、16被打開,於第2吸附塔2b中繼運轉狀態(h)之後實行吸附步驟,且於第3吸附塔2c中繼運轉狀態(h)之後實行升壓步驟。藉由第9開關閥8a被打開,於第1吸附塔2a中實行脫附步驟。第1吸附塔2a係設為不與真空泵50相通者,第1吸附塔2a中之脫附步驟係設為排放壓力脫附步驟。此處,真空泵50由於不需要,故而亦可停止。第4吸附塔2d係設為待機狀態。 In the operating state (i), the second, sixth, ninth, fifteenth, and twenty-sixth on-off valves 6b, 7b, 8a, 10c, and 16 are opened, and the remaining on-off valves are closed. By the second, sixth, fifteenth, and twenty-sixth on-off valves 6b, 7b, 10c, and 16 being opened, the adsorption step is performed after the second adsorption tower 2b relay operation state (h), and in the third adsorption tower 2c After the relay operation state (h), the step-up step is performed. When the ninth switching valve 8a is opened, the desorption step is performed in the first adsorption tower 2a. The first adsorption tower 2a is not connected to the vacuum pump 50, and the desorption step in the first adsorption tower 2a is a discharge pressure desorption step. Here, since the vacuum pump 50 is unnecessary, it may be stopped. The fourth adsorption tower 2d is set to the standby state.

於運轉狀態(j)下,開關閥之開關狀態係設為與運轉狀態(h)相同。藉此,於第2吸附塔2b中繼運轉狀態(h)之後實行吸附步驟,且於第3吸附塔2c中繼運轉狀態(h)之後實行升壓步驟,第4吸附塔2d係設為待機狀態。不同於運轉狀態(h),於運轉狀態(j)下,第1吸附塔2a係設為與真空泵50相通者,第1吸附塔2a中之脫附步驟係設為真空脫附步驟。 In the operating state (j), the switching state of the on-off valve is set to be the same as the operating state (h). By this, the adsorption step is performed after the relay operation state (h) of the second adsorption tower 2b, and the boosting step is performed after the relay operation state (h) of the third adsorption tower 2c, and the fourth adsorption tower 2d is set to standby status. Unlike the operating state (h), in the operating state (j), the first adsorption tower 2a is set to communicate with the vacuum pump 50, and the desorption step in the first adsorption tower 2a is set to a vacuum desorption step.

於運轉狀態(k)下,第3、第7、第9、第20、第22、第25開關閥6c、7c、8a、11d、12b、14被打開,其餘之開關閥被關閉。藉由第3、第7開關閥6c、7c被打開,於第3吸附塔2c中實行吸附步驟。藉由 第20、第22、第25開關閥11d、12b、14被打開,於第2吸附塔2b中實行第1氣體吹送步驟,且於第4吸附塔2d中實行第1氣體導入步驟。藉由第9開關閥8a被打開,於第1吸附塔2a中實行脫附步驟。此處,繼運轉狀態(j)之後第1吸附塔2a中之脫附步驟係設為真空脫附步驟。 In the operating state (k), the third, seventh, ninth, 20th, 22nd, and 25th on-off valves 6c, 7c, 8a, 11d, 12b, 14 are opened, and the remaining on-off valves are closed. When the third and seventh on-off valves 6c and 7c are opened, the adsorption step is performed in the third adsorption tower 2c. By The 20th, 22nd, and 25th on-off valves 11d, 12b, and 14 are opened, the first gas blowing step is performed in the second adsorption tower 2b, and the first gas introduction step is performed in the fourth adsorption tower 2d. When the ninth switching valve 8a is opened, the desorption step is performed in the first adsorption tower 2a. Here, the desorption step in the first adsorption tower 2a following the operation state (j) is a vacuum desorption step.

於運轉狀態(l)下,第3、第7、第9、第16、第17、第22、第25、第26開關閥6c、7c、8a、10d、11a、12b、14、16被打開,其餘之開關閥被關閉。藉由第3、第7、第16、第26開關閥6c、7c、10d、16被打開,於第3吸附塔2c中繼運轉狀態(k)之後實行吸附步驟,且於第4吸附塔2d中實行升壓步驟。藉由第9、第17、第22、第25開關閥8a、11a、12b、14被打開,於第1吸附塔2a中實行洗淨步驟,且於第2吸附塔2d中實行減壓步驟。此處,第1吸附塔2a係設為與真空泵50相通者,於洗淨步驟中排出之排氣G3'被真空泵50所吸引。 In the operating state (l), the 3rd, 7th, 9th, 16th, 17th, 22nd, 25th, 26th on-off valves 6c, 7c, 8a, 10d, 11a, 12b, 14, 16 are opened , The rest of the on-off valve is closed. By the 3rd, 7th, 16th, and 26th on-off valves 6c, 7c, 10d, and 16 being opened, the adsorption step is performed after the relay operation state (k) of the third adsorption tower 2c, and on the fourth adsorption tower 2d The step-up step is carried out. When the 9th, 17th, 22nd, and 25th on-off valves 8a, 11a, 12b, and 14 are opened, a washing step is performed in the first adsorption tower 2a, and a depressurization step is performed in the second adsorption tower 2d. Here, the first adsorption tower 2a is set to communicate with the vacuum pump 50, and the exhaust gas G3' discharged in the washing step is sucked by the vacuum pump 50.

於運轉狀態(m)下,第3、第7、第16、第17、第22、第25、第26開關閥6c、7c、10d、11a、12b、14、16被打開,其餘之開關閥被關閉。藉由第3、第7、第16、第26開關閥6c、7c、10d、16被打開,於第3吸附塔2c中繼運轉狀態(l)之後實行吸附步驟,於第4吸附塔2c中繼運轉狀態(l)之後實行升壓步驟。藉由第17、第22、第25開關閥11a、12b、14被打開,於第1吸附塔2a中實行第2氣體導入步驟,且於第2吸附塔2b中實行第2氣體吹送步驟。此處,真空泵50由於不需要,故而亦可停止。 In the operating state (m), the 3rd, 7th, 16th, 17th, 22nd, 25th, 26th on-off valves 6c, 7c, 10d, 11a, 12b, 14, 16 are opened, and the remaining on-off valves is closed. By opening the third, seventh, sixteenth, and twenty-sixth on-off valves 6c, 7c, 10d, and 16 and performing the adsorption step after the relay operation state (l) of the third adsorption tower 2c, in the fourth adsorption tower 2c Following the operating state (1), a step-up step is performed. When the 17th, 22nd, and 25th on-off valves 11a, 12b, and 14 are opened, the second gas introduction step is performed in the first adsorption tower 2a, and the second gas blowing step is performed in the second adsorption tower 2b. Here, since the vacuum pump 50 is unnecessary, it may be stopped.

於運轉狀態(n)下,第3、第7、第10、第16、第26開關閥6c、7c、8b、10d、16被打開,其餘之開關閥被關閉。藉由第3、第7、第16、第26開關閥6c、7c、10d、16被打開,於第3吸附塔2c中繼運轉狀態(m)之後實行吸附步驟,且於第4吸附塔2d中繼運轉狀態(m)之後實行升壓步驟。藉由第10開關閥8b被打開,於第2吸附塔2b中實行脫附步驟。第2吸附塔2b係設為不與真空泵50相通者,第2吸附塔2b中之脫 附步驟係設為排放壓力脫附步驟。此處,真空泵50由於不需要,故而亦可停止。第1吸附塔2d係設為待機狀態。 In the operating state (n), the third, seventh, tenth, sixteenth, and twenty-sixth on-off valves 6c, 7c, 8b, 10d, and 16 are opened, and the remaining on-off valves are closed. By the 3rd, 7th, 16th, and 26th on-off valves 6c, 7c, 10d, and 16 being opened, the adsorption step is performed after the third adsorption tower 2c relay operation state (m), and the fourth adsorption tower 2d After the relay operation state (m), the step-up step is performed. When the tenth switching valve 8b is opened, the desorption step is performed in the second adsorption tower 2b. The second adsorption tower 2b is set not to communicate with the vacuum pump 50, and the second adsorption tower 2b is removed The attachment step is set as the discharge pressure desorption step. Here, since the vacuum pump 50 is unnecessary, it may be stopped. The first adsorption tower 2d is set to a standby state.

於運轉狀態(o)下,開關閥之開關狀態係設為與運轉狀態(n)相同。藉此,於第3吸附塔2c中繼運轉狀態(n)之後實行吸附步驟,且於第4吸附塔2d中繼運轉狀態(n)之後實行升壓步驟,第1吸附塔2a係設為待機狀態。不同於運轉狀態(n),於運轉狀態(o)下,第2吸附塔2b係設為與真空泵50相通者,第2吸附塔2b中之脫附步驟係設為真空脫附步驟。 In the operating state (o), the switching state of the on-off valve is set to be the same as the operating state (n). By this, the adsorption step is performed after the relay operation state (n) of the third adsorption tower 2c, and the boosting step is performed after the relay operation state (n) of the fourth adsorption tower 2d, and the first adsorption tower 2a is set to standby status. Unlike the operating state (n), in the operating state (o), the second adsorption tower 2b is set to communicate with the vacuum pump 50, and the desorption step in the second adsorption tower 2b is set to a vacuum desorption step.

於運轉狀態(p)下,第4、第8、第10、第17、第23、第25開關閥6d、7d、8b、11a、12c、14被打開,其餘之開關閥被關閉。藉由第4、第8開關閥6d、7d被打開,於第4吸附塔2d中實行吸附步驟。藉由第17、第23、第25開關閥11a、12c、14被打開,於第1吸附塔2a中實行第1氣體導入步驟,且於第3吸附塔2c中實行第1氣體吹送步驟。藉由第10開關閥8b被打開,於第2吸附塔2a中實行脫附步驟。此處,繼運轉狀態(o)之後第2吸附塔2b中之脫附步驟係設為真空脫附步驟。 In the operating state (p), the 4th, 8th, 10th, 17th, 23rd, 25th on-off valves 6d, 7d, 8b, 11a, 12c, 14 are opened, and the remaining on-off valves are closed. When the fourth and eighth switching valves 6d and 7d are opened, the adsorption step is performed in the fourth adsorption tower 2d. By opening the 17th, 23rd, and 25th on-off valves 11a, 12c, and 14, the first gas introduction step is performed in the first adsorption tower 2a, and the first gas blowing step is performed in the third adsorption tower 2c. When the tenth switching valve 8b is opened, the desorption step is performed in the second adsorption tower 2a. Here, the desorption step in the second adsorption tower 2b following the operation state (o) is a vacuum desorption step.

於運轉狀態(q)下,第4、第8、第10、第13、第18、第23、第25、第26開關閥6d、7d、8b、10a、11b、12c、14、16被打開,其餘之開關閥被關閉。藉由第4、第8、第13、第26開關閥6d、7d、10a、16被打開,於第1吸附塔2a中實行升壓步驟,且於第4吸附塔2d中繼運轉狀態(p)之後實行吸附步驟。藉由第10、第18、第23、第25開關閥8b、11b、12c、14被打開,於第2吸附塔2b中實行洗淨步驟,且於第3吸附塔2c中實行減壓步驟。此處,第2吸附塔2b係設為與真空泵50相通者,於洗淨步驟中排出之排氣G3'被真空泵50所吸引。 In the operating state (q), the 4th, 8th, 10th, 13th, 18th, 23rd, 25th, 26th on-off valves 6d, 7d, 8b, 10a, 11b, 12c, 14, 16 are opened , The rest of the on-off valve is closed. By opening the fourth, eighth, thirteenth, and twenty-sixth on-off valves 6d, 7d, 10a, and 16 and performing the step-up step in the first adsorption tower 2a, the relay operation state is repeated in the fourth adsorption tower 2d (p ) The adsorption step is then carried out. When the 10th, 18th, 23rd, and 25th on-off valves 8b, 11b, 12c, and 14 are opened, a washing step is performed in the second adsorption tower 2b, and a depressurization step is performed in the third adsorption tower 2c. Here, the second adsorption tower 2b is set to communicate with the vacuum pump 50, and the exhaust gas G3' discharged in the washing step is sucked by the vacuum pump 50.

於運轉狀態(r)下,第4、第8、第13、第18、第23、第25、第26開關閥6d、7d、10a、11b、12c、14、16被打開,其餘之開關閥被關閉。藉由第4、第8、第13、第26開關閥6d、7d、10a、16被打開,於 第1吸附塔2a中繼運轉狀態(q)之後實行升壓步驟,且於第4吸附塔2d中繼運轉狀態(q)之後實行吸附步驟。藉由第18、第23、第25開關閥11b、12c、14被打開,於第2吸附塔2b中實行第2氣體導入步驟,且於第3吸附塔2c中實行第2氣體吹送步驟。此處,真空泵50由於不需要,故而亦可停止。 In the operating state (r), the 4th, 8th, 13th, 18th, 23rd, 25th, 26th on-off valves 6d, 7d, 10a, 11b, 12c, 14, 16 are opened, and the remaining on-off valves is closed. By the 4th, 8th, 13th, 26th on-off valves 6d, 7d, 10a, 16 are opened, The first adsorption tower 2a performs the boosting step after the relay operation state (q), and the fourth adsorption tower 2d performs the adsorption step after the relay operation state (q). When the 18th, 23rd, and 25th on-off valves 11b, 12c, and 14 are opened, the second gas introduction step is performed in the second adsorption tower 2b, and the second gas blowing step is performed in the third adsorption tower 2c. Here, since the vacuum pump 50 is unnecessary, it may be stopped.

於運轉狀態(s)下,第4、第8、第11、第13、第26開關閥6d、7d、8c、10a、16被打開,其餘之開關閥被關閉。藉由第4、第8、第11、第26開關閥6d、7d、10a、16被打開,於第1吸附塔2a中繼運轉狀態(r)之後實行升壓步驟,且於第4吸附塔2d中繼運轉狀態(r)之後實行吸附步驟。藉由第11開關閥8c被打開,於第3吸附塔2c中實行脫附步驟。第3吸附塔2c係設為不與真空泵50相通者,第3吸附塔2c中之脫附步驟係設為排放壓力脫附步驟。此處,真空泵50由於不需要,故而亦可停止。第2吸附塔2b係設為待機狀態。 In the operating state (s), the fourth, eighth, eleventh, thirteenth, and twenty-sixth on-off valves 6d, 7d, 8c, 10a, and 16 are opened, and the remaining on-off valves are closed. By the 4th, 8th, 11th, and 26th on-off valves 6d, 7d, 10a, 16 being opened, the step-up step is performed after the relay operation state (r) of the first adsorption tower 2a, and in the fourth adsorption tower After 2d relay operation state (r), the adsorption step is performed. When the 11th on-off valve 8c is opened, the desorption step is performed in the third adsorption tower 2c. The third adsorption tower 2c is not connected to the vacuum pump 50, and the desorption step in the third adsorption tower 2c is a discharge pressure desorption step. Here, since the vacuum pump 50 is unnecessary, it may be stopped. The second adsorption tower 2b is set to the standby state.

於運轉狀態(t)下,開關閥之開關狀態係設為與運轉狀態(s)相同。藉此,於第1吸附塔2a中繼運轉狀態(s)之後實行升壓步驟,且於第4吸附塔2d中繼運轉狀態(s)之後實行吸附步驟,第2吸附塔2b係設為待機狀態。不同於運轉狀態(s),於運轉狀態(t)下,第3吸附塔2c係設為與真空泵50相通者,第3吸附塔2c中之脫附步驟係設為真空脫附步驟。 In the operating state (t), the switching state of the on-off valve is set to be the same as the operating state (s). By this, the boosting step is performed after the first adsorption tower 2a relay operation state (s), and after the fourth adsorption tower 2d relay operation state (s), the adsorption step is performed, and the second adsorption tower 2b is set to standby status. Unlike the operating state (s), in the operating state (t), the third adsorption tower 2c is set to communicate with the vacuum pump 50, and the desorption step in the third adsorption tower 2c is set to a vacuum desorption step.

於運轉狀態(a)、(b)、(e)、(f)、(g)、(j)、(k)、(l)、(o)、(p)、(q)、(t)下,經由第1切換閥42將第1再利用配管41與第2再利用配管43連接,經由第2切換閥45將第2再利用配管43與第4再利用配管47連接,第4再利用配管47經由第3切換閥48而與第5再利用配管49或第2釋出用配管44'連接。藉此,可將真空脫附步驟、洗淨步驟中之排氣G3、G3'經由真空泵50導入至緩衝槽22或常壓空間。於運轉狀態(c)、(d)、(h)、(i)、(m),(n)、(r)、(s)下,第1再利用配管41經由第1切換 閥42而與第2再利用配管43或第1釋出用配管44連接,經由第2切換閥45將第2再利用配管43與第3再利用配管46連接。藉此,可不經由真空泵50而將排放壓力脫附步驟中之排氣G3導入至緩衝槽22或常壓空間。 In the operating state (a), (b), (e), (f), (g), (j), (k), (l), (o), (p), (q), (t) Next, the first reuse pipe 41 and the second reuse pipe 43 are connected via the first switch valve 42, the second reuse pipe 43 and the fourth reuse pipe 47 are connected via the second switch valve 45, and the fourth reuse pipe The pipe 47 is connected to the fifth reuse pipe 49 or the second discharge pipe 44' via the third switching valve 48. With this, the exhaust gases G3 and G3' in the vacuum desorption step and the cleaning step can be introduced into the buffer tank 22 or the normal pressure space through the vacuum pump 50. In the operating states (c), (d), (h), (i), (m), (n), (r), (s), the first reuse piping 41 is switched via the first The valve 42 is connected to the second reuse piping 43 or the first release piping 44, and connects the second reuse piping 43 and the third reuse piping 46 via the second switching valve 45. With this, the exhaust gas G3 in the discharge pressure desorption step can be introduced into the buffer tank 22 or the normal pressure space without passing through the vacuum pump 50.

於在吸附塔2a、2b、2c、2d之任一者中實行吸附步驟時,經由原料氣體導入流路將原料氦氣G1導入至該吸附塔之內部。吸附塔內部因原料氦氣G1之壓力而被加壓至吸附壓力。吸附壓力可由壓力調節閥26進行調節。藉此,所導入之原料氦氣G1中所含之雜質氣體於加壓下吸附於吸附劑。又,未吸附於吸附劑之氣體以純化氦氣G2之形式經由純化氣體流路自吸附塔內部排出。較佳為以純化氦氣G2之氦濃度成為目標濃度之方式,設定變壓式吸附裝置1中之吸附步驟之重複間隔。純化氦氣G2之氦濃度較佳為設為99.999vol%以上,更佳為設為99.9999vol%以上。例如,只要預先藉由實驗求出由濃度感測器24所檢測到之原料氦氣G1之濃度、由第4流量控制閥25所調節之流量、純化氦氣G2之目標濃度、及吸附步驟之重複間隔之間的關係,並基於該關係設定檢測濃度、調節流量、及與目標濃度相對應之吸附步驟之重複間隔即可。變壓式吸附裝置1中之吸附步驟之重複間隔可藉由決定純化處理循環之1個循環之時間而設定,其設定變更只要變更純化處理循環之1個循環中之吸附步驟之實行時間與脫附步驟之實行時間即可。 When the adsorption step is performed in any of the adsorption towers 2a, 2b, 2c, and 2d, the raw material helium gas G1 is introduced into the inside of the adsorption tower through the raw material gas introduction flow path. The inside of the adsorption tower is pressurized to the adsorption pressure due to the pressure of the raw material helium gas G1. The suction pressure can be adjusted by the pressure regulating valve 26. Thereby, the impurity gas contained in the introduced raw material helium gas G1 is adsorbed on the adsorbent under pressure. In addition, the gas not adsorbed to the adsorbent is discharged from the inside of the adsorption tower through the purified gas flow path in the form of purified helium gas G2. It is preferable to set the repetition interval of the adsorption step in the pressure swing adsorption apparatus 1 in such a manner that the helium concentration of the purified helium gas G2 becomes the target concentration. The helium concentration of the purified helium gas G2 is preferably set to 99.999 vol% or more, and more preferably set to 99.9999 vol% or more. For example, as long as the concentration of the raw material helium gas G1 detected by the concentration sensor 24, the flow rate adjusted by the fourth flow control valve 25, the target concentration of the purified helium gas G2, and the adsorption step are obtained through experiments The relationship between the repetition intervals, and based on this relationship, the repetition interval of the detection step, the adjustment flow rate, and the adsorption step corresponding to the target concentration may be set. The repetition interval of the adsorption step in the pressure swing adsorption device 1 can be set by determining the time of one cycle of the purification process cycle, and the setting change can be performed only by changing the execution time and desorption of the adsorption step in one cycle of the purification process cycle The execution time of the attached steps is sufficient.

於在處於第1氣體吹送步驟後且第2氣體吹送步驟前之狀態之吸附塔2a、2b、2c、2d之任一者中實行減壓步驟時,該吸附塔內部藉由與連通流路、處於洗淨步驟之吸附塔之內部、及排氣流路相通而壓力逐漸減少。由於處於該減壓步驟之吸附塔之內部氣體G4'被導入至處於洗淨步驟之吸附塔中,因此減壓步驟中之吸附塔之內部壓力之減少幅度與被導入至處於洗淨步驟之吸附塔中之氣體量相對應。 When the decompression step is performed in any one of the adsorption towers 2a, 2b, 2c, and 2d in the state after the first gas blowing step and before the second gas blowing step, the interior of the adsorption tower is connected to the The inside of the adsorption tower in the washing step communicates with the exhaust gas flow path and the pressure gradually decreases. Since the internal gas G4' in the adsorption tower in the depressurization step is introduced into the adsorption tower in the cleaning step, the reduction in the internal pressure of the adsorption tower in the decompression step is introduced into the adsorption in the cleaning step The amount of gas in the tower corresponds.

於在吸附塔2a、2b、2c、2d之任一者中實行排放壓力脫附步驟時,該吸附塔內部與排氣流路相通,藉由第1、第2切換閥42、45,切換成不經由真空泵50而與緩衝槽22相通之狀態、及經由第1釋出用配管44而與常壓空間相通之狀態。該吸附塔之內部壓力被減壓至由第3流量控制閥18所調節之壓力,雜質氣體自吸附劑脫附。所脫附之雜質氣體以排氣G3之形式經由排氣流路自吸附塔內部排出。排放壓力脫附步驟之末期之吸附塔內部之壓力係設為略微高於大氣壓之壓力,以使於脫附步驟中排氣G3因自身之壓力而於再利用流路中流動,從而到達緩衝槽22,或自第1釋出用配管44釋出至常壓空間。 When the discharge pressure desorption step is performed in any of the adsorption towers 2a, 2b, 2c, and 2d, the interior of the adsorption tower communicates with the exhaust gas flow path, and the first and second switching valves 42, 45 are switched to A state where it communicates with the buffer tank 22 without passing through the vacuum pump 50 and a state where it communicates with the normal pressure space through the first release piping 44. The internal pressure of the adsorption tower is reduced to the pressure adjusted by the third flow control valve 18, and the impurity gas is desorbed from the adsorbent. The desorbed impurity gas is discharged from the inside of the adsorption tower through the exhaust gas flow path in the form of exhaust gas G3. The pressure inside the adsorption tower at the end of the discharge pressure desorption step is set to a pressure slightly higher than atmospheric pressure, so that in the desorption step, the exhaust gas G3 flows in the reuse flow path due to its own pressure, thereby reaching the buffer tank 22, or from the first release piping 44 to the normal pressure space.

於在吸附塔2a、2b、2c、2d之任一者中實行真空脫附步驟時,該吸附塔內部與排氣流路相通,進而,藉由第1~第3切換閥42、45、48,切換成經由真空泵50而與緩衝槽22相通之狀態、及經由第2釋出用配管44'而與常壓空間相通之狀態。藉此,吸附塔之內部壓力藉由真空泵50而被減壓至未達大氣壓,雜質氣體自吸附劑脫附。所脫附之雜質氣體藉由被真空泵50吸引,以排氣G3之形式經由排氣流路自吸附塔內部排出。排氣G3於再利用流路中流動而到達緩衝槽22,或自第2釋出用配管44'釋出至常壓空間。 When the vacuum desorption step is performed in any of the adsorption towers 2a, 2b, 2c, and 2d, the interior of the adsorption tower communicates with the exhaust gas flow path, and further, by the first to third switching valves 42, 45, 48 , It is switched to a state where it communicates with the buffer tank 22 via the vacuum pump 50, and a state where it communicates with the normal pressure space via the second release piping 44'. As a result, the internal pressure of the adsorption tower is reduced to less than atmospheric pressure by the vacuum pump 50, and the impurity gas is desorbed from the adsorbent. The desorbed impurity gas is sucked by the vacuum pump 50, and is discharged from the inside of the adsorption tower through the exhaust gas flow path in the form of exhaust gas G3. The exhaust gas G3 flows through the reuse flow path to reach the buffer tank 22, or is discharged from the second discharge pipe 44' to the normal pressure space.

於在吸附塔2a、2b、2c、2d之任一者中實行升壓步驟時,該吸附塔內部經由連通流路而與處於吸附步驟之吸附塔之內部相通。此時,自處於吸附步驟之吸附塔排出之純化氦氣G2之一部分被導入至處於升壓步驟之吸附塔中。藉此,處於升壓步驟之吸附塔之內部經加壓而壓力上升至吸附壓力或吸附壓力附近。 When the pressure-increasing step is performed in any of the adsorption towers 2a, 2b, 2c, and 2d, the inside of the adsorption tower communicates with the inside of the adsorption tower in the adsorption step via the communication flow path. At this time, a part of the purified helium gas G2 discharged from the adsorption tower in the adsorption step is introduced into the adsorption tower in the boosting step. Thereby, the inside of the adsorption tower in the step of increasing pressure is pressurized and the pressure rises to or near the adsorption pressure.

於各純化處理循環中,實行自處於吸附步驟後且脫附步驟前之狀態之吸附塔2a、2b、2c、2d之任一者吹送內部氣體之第1氣體吹送步驟,同時實行將該所吹送之內部氣體導入至處於脫附步驟後且升壓步驟前之狀態之吸附塔2a、2b、2c、2d之另外任一者中之第1氣體導 入步驟。藉由處於第1氣體吹送步驟之吸附塔之內部與處於第1氣體導入步驟之吸附塔之內部相通,處於第1氣體吹送步驟之吸附塔之內部壓力與處於第1氣體導入步驟之吸附塔之內部壓力的差減少。換言之,藉由將自處於第1氣體吹送步驟之吸附塔吹送之內部氣體導入至處於第1氣體導入步驟之吸附塔中,處於第1氣體吹送步驟之吸附塔之內部壓力減少,處於第1氣體導入步驟之吸附塔之內部壓力上升。於本實施形態中,處於第1氣體吹送步驟之吸附塔之內部壓力與處於第1氣體導入步驟之吸附塔之內部壓力的差被視為於第1氣體吹送步驟與第1氣體導入步驟之結束時殘留者,但兩內部壓力亦可均等化。 In each purification treatment cycle, the first gas blowing step of blowing internal gas from any one of the adsorption towers 2a, 2b, 2c, 2d in the state after the adsorption step and before the desorption step is carried out, and the blowing The internal gas is introduced into the first gas guide of any one of the adsorption towers 2a, 2b, 2c, 2d in the state after the desorption step and before the pressure step 入步骤。 Steps. By connecting the inside of the adsorption tower at the first gas blowing step with the inside of the adsorption tower at the first gas introduction step, the internal pressure of the adsorption tower at the first gas blowing step and the adsorption tower at the first gas introduction step The difference in internal pressure is reduced. In other words, by introducing the internal gas blown from the adsorption tower in the first gas blowing step into the adsorption tower in the first gas introduction step, the internal pressure of the adsorption tower in the first gas blowing step is reduced to be in the first gas The internal pressure of the adsorption tower in the introduction step rises. In this embodiment, the difference between the internal pressure of the adsorption tower in the first gas blowing step and the internal pressure of the adsorption tower in the first gas introduction step is regarded as the end of the first gas blowing step and the first gas introduction step Time remains, but the two internal pressures can also be equalized.

於各純化處理循環中,實行自處於第1氣體吹送步驟後且脫附步驟前之狀態之吸附塔2a、2b、2c、2d之任一者吹送內部氣體之第2氣體吹送步驟,同時實行將該所吹送之內部氣體導入至處於脫附步驟後且第1氣體吹送步驟前之狀態之吸附塔2a、2b、2c、2d之另外任一者中之第2氣體導入步驟。藉由處於第2氣體吹送步驟之吸附塔之內部與處於第2氣體導入步驟之吸附塔之內部相通,處於第2氣體吹送步驟之吸附塔之內部壓力與處於第2氣體導入步驟之吸附塔之內部壓力的差減少。換言之,藉由將自處於第2氣體吹送步驟之吸附塔吹送之內部氣體導入至處於第2氣體導入步驟之吸附塔中,處於第2氣體吹送步驟之吸附塔之內部壓力減少,處於第2氣體導入步驟之吸附塔之內部壓力上升。於本實施形態中,處於第2氣體吹送步驟之吸附塔之內部壓力與處於第2氣體導入步驟之吸附塔之內部壓力的差於第2氣體吹送步驟與第2氣體導入步驟之結束時被消除,兩內部壓力經均等化,但兩內部壓力之差亦可殘留。 In each purification treatment cycle, the second gas blowing step of blowing the internal gas from any of the adsorption towers 2a, 2b, 2c, 2d in the state after the first gas blowing step and before the desorption step is carried out, and the The blown internal gas is introduced into the second gas introduction step of any one of the adsorption towers 2a, 2b, 2c, and 2d in a state after the desorption step and before the first gas blowing step. By connecting the inside of the adsorption tower at the second gas blowing step with the inside of the adsorption tower at the second gas introduction step, the internal pressure of the adsorption tower at the second gas blowing step and the adsorption tower at the second gas introduction step The difference in internal pressure is reduced. In other words, by introducing the internal gas blown from the adsorption tower in the second gas blowing step into the adsorption tower in the second gas introduction step, the internal pressure of the adsorption tower in the second gas blowing step is reduced to be in the second gas The internal pressure of the adsorption tower in the introduction step rises. In this embodiment, the difference between the internal pressure of the adsorption tower in the second gas blowing step and the internal pressure of the adsorption tower in the second gas introduction step is eliminated at the end of the second gas blowing step and the second gas introduction step , The two internal pressures are equalized, but the difference between the two internal pressures can also remain.

藉此,於吸附步驟與減壓步驟之間及減壓步驟與脫附步驟之間各者中,減少吸附塔之內部壓力之差。藉由減少吸附塔之內部壓力之差,處於第1、第2氣體吹送步驟之吸附塔之內部氣體被用於處於第 1、第2氣體導入步驟之吸附塔之內部壓力之上升,因此可使其內部氣體中所含之雜質氣體吸附於吸附劑,並回收未吸附於吸附劑之純化氦氣。 By this, the difference between the internal pressure of the adsorption tower is reduced between the adsorption step and the decompression step and between the decompression step and the desorption step. By reducing the difference in the internal pressure of the adsorption tower, the internal gas of the adsorption tower in the first and second gas blowing steps is used to 1. The internal pressure of the adsorption tower in the second gas introduction step rises, so that the impurity gas contained in the internal gas can be adsorbed on the adsorbent, and the purified helium gas not adsorbed on the adsorbent can be recovered.

為了向處於第1氣體導入步驟之吸附塔中導入處於第1氣體吹送步驟之吸附塔之內部氣體,而打開連通流路之開關閥之任一者。因此,被導入至處於第1氣體導入步驟之吸附塔中之氣體量係與第1氣體吹送步驟或第1氣體導入步驟之實行時間和於連通流路中流動之氣體流量的積相對應。本實施形態之第1氣體吹送步驟與第1氣體導入步驟之實行時間係設為預先決定之固定時間,該固定之實行時間被記憶於控制裝置20中。 In order to introduce the internal gas of the adsorption tower in the first gas blowing step into the adsorption tower in the first gas introduction step, any one of the on-off valves communicating with the flow path is opened. Therefore, the amount of gas introduced into the adsorption tower in the first gas introduction step corresponds to the product of the execution time of the first gas blowing step or the first gas introduction step and the gas flow rate flowing in the communication channel. The execution time of the first gas blowing step and the first gas introduction step of this embodiment is set to a predetermined fixed time, and the fixed execution time is stored in the control device 20.

於本實施形態中,導入至處於第1氣體導入步驟之吸附塔中之氣體量係藉由利用第1流量控制閥15調節於連通流路中流動之氣體之流量而變更。為此,自處於第1氣體吹送步驟之吸附塔被吹送並導入至處於第1氣體導入步驟之吸附塔中之氣體G4於連通流路中之流量、與原料氦氣G1之氦濃度之間的預先決定之對應關係被記憶於控制裝置20中。 In the present embodiment, the amount of gas introduced into the adsorption tower in the first gas introduction step is changed by adjusting the flow rate of the gas flowing in the communication channel using the first flow control valve 15. For this reason, the flow rate of the gas G4 in the communication flow path from the adsorption tower in the first gas blowing step and being introduced into the adsorption tower in the first gas introduction step, and the helium concentration of the raw material helium gas G1 The predetermined correspondence is stored in the control device 20.

為了僅以由控制裝置20所記憶之實行時間實行第1氣體吹送步驟及第1氣體導入步驟而控制開關閥,並且基於所記憶之對應關係利用第1流量控制閥15變更調節氣體流量,以使自處於第1氣體吹送步驟之吸附塔被吹送並導入至處於第1氣體導入步驟之吸附塔中之氣體量增加至由濃度感測器24所檢測到之原料氦氣G1之氦濃度般之高程度。 In order to execute the first gas blowing step and the first gas introduction step only at the execution time memorized by the control device 20, the on-off valve is controlled, and the adjusted gas flow rate is changed by the first flow control valve 15 based on the memorized correspondence, so that Since the adsorption tower in the first gas blowing step is blown and introduced into the adsorption tower in the first gas introduction step, the amount of gas is increased to as high as the helium concentration of the raw material helium gas G1 detected by the concentration sensor 24 degree.

被導入至處於第1氣體導入步驟之吸附塔中之氣體量係與處於第1氣體吹送步驟之吸附塔中之第1氣體吹送步驟開始時之內壓和第1氣體吹送步驟結束時之內壓之壓力差δP'相對應。因此,只要藉由根據利用濃度感測器24檢測到之檢測氦濃度之變化而變更壓力差δP',將被導入至處於第1氣體導入步驟之吸附塔中之氣體量最佳化即可。例 如,預先決定如於檢測氦濃度為30vol%以上之情形時壓力差δP'成為350kPa、於檢測氦濃度為15vol%時壓力差δP'成為50kPa之於連通流路中流動之氣體流量與原料氦氣G1之氦濃度之間的關係。利用第1流量控制閥15進行之氣體流量之調節於純化處理步驟之1個循環中進行1次即可,若原料氦氣G1之濃度變動較小,則亦可於複數個循環中進行1次。 The amount of gas introduced into the adsorption tower in the first gas introduction step is the internal pressure at the beginning of the first gas blowing step in the adsorption tower in the first gas blowing step and the internal pressure at the end of the first gas blowing step The pressure difference δP' corresponds. Therefore, the amount of gas introduced into the adsorption tower in the first gas introduction step may be optimized by changing the pressure difference δP′ according to the change in the detected helium concentration detected by the concentration sensor 24. example For example, it is determined in advance that the pressure difference δP' becomes 350 kPa when the detected helium concentration is 30 vol% or more, and the pressure difference δP' becomes 50 kPa when the detected helium concentration is 15 vol%. The relationship between the helium concentration of gas G1. The adjustment of the gas flow rate by the first flow control valve 15 may be performed once in one cycle of the purification process step, and if the concentration variation of the raw material helium gas G1 is small, it may also be performed once in multiple cycles .

於將導入至處於第1氣體導入步驟之吸附塔中之氣體量增加至原料氦氣G1之氦濃度般之高程度之情形時,繼該第1氣體導入步驟之後之升壓步驟之開始時刻之吸附塔之內部壓力發生變化。因此,較佳為於使處於該升壓步驟之吸附塔之內壓升壓至吸附壓力時,亦使自處於吸附步驟之吸附塔被吹送並導入至處於升壓步驟之吸附塔中之純化氦氣G2之量發生變化。於該情形時,於升壓步驟中,只要將升壓步驟之時間設為預先決定之固定值,並藉由第2流量控制閥17調節於連通流路中流動之氣體流量即可。為此,只要藉由實驗預先決定由第2流量控制閥17所調節之於連通流路中流動之氣體流量與原料氦氣G1之氦濃度之間的關係即可。 When the amount of gas introduced into the adsorption tower in the first gas introduction step is increased to such a high level as the helium concentration of the raw material helium gas G1, the start time of the step-up step following the first gas introduction step The internal pressure of the adsorption tower changes. Therefore, it is preferable that when the internal pressure of the adsorption tower in the pressure increasing step is increased to the adsorption pressure, the purified helium from the adsorption tower in the adsorption step is blown and introduced into the adsorption tower in the pressure step The amount of gas G2 changes. In this case, in the boosting step, it is only necessary to set the time of the boosting step to a predetermined fixed value and adjust the flow rate of the gas flowing in the communication flow path by the second flow control valve 17. Therefore, it is only necessary to determine in advance by experiment the relationship between the gas flow rate adjusted by the second flow rate control valve 17 and flowing in the communication channel and the helium concentration of the raw material helium gas G1.

作為用以使導入至處於第1氣體導入步驟之吸附塔中之氣體量增加至原料氦氣G1之氦濃度般之高程度之變化例,亦可調節第1氣體吹送步驟及第1氣體導入步驟之實行時間。於該情形時,由於將於連通流路中流動之氣體流量設為固定,故而不需要利用第1流量控制閥15進行之流量控制。 As a variation example for increasing the amount of gas introduced into the adsorption tower in the first gas introduction step to a high level like the helium concentration of the raw material helium gas G1, the first gas blowing step and the first gas introduction step can also be adjusted Implementation time. In this case, since the flow rate of the gas flowing in the communication channel is fixed, the flow rate control by the first flow control valve 15 is not necessary.

即,由於導入至處於第1氣體導入步驟之吸附塔中之氣體量係與第1氣體吹送步驟及第1氣體導入步驟之實行時間和於連通流路中流動之氣體流量的積相對應,因此藉由調節第1氣體吹送步驟及第1氣體導入步驟之實行時間,可變更其氣體量。 That is, since the amount of gas introduced into the adsorption tower in the first gas introduction step corresponds to the product of the execution time of the first gas blowing step and the first gas introduction step and the gas flow rate flowing in the communication flow path, The gas amount can be changed by adjusting the execution time of the first gas blowing step and the first gas introduction step.

為此,第1氣體吹送步驟及第1氣體導入步驟之實行時間、與原 料氦氣G1之氦濃度之間的預先決定之對應關係被記憶於控制裝置20中。基於由控制裝置20所記憶之對應關係變更第1氣體吹送步驟及第1氣體導入步驟之實行時間、即用於第1氣體吹送步驟及第1氣體導入步驟之開關閥之控制時間,以使自處於第1氣體吹送步驟之吸附塔被吹送並導入至處於第1氣體導入步驟之吸附塔中之氣體量增加至由濃度感測器24所檢測到之原料氦氣G1之氦濃度般之高程度。再者,於變更第1氣體吹送步驟、第1氣體導入步驟之實行時間之情形時,於不變更吸附步驟之實行時間之情形時,只要變更升壓、脫附步驟之實行時間即可。此外只要與實施形態同樣地進行控制即可。 For this reason, the execution time of the first gas blowing step and the first gas introduction step The predetermined correspondence between the helium concentrations of the helium gas G1 is stored in the control device 20. The execution time of the first gas blowing step and the first gas introduction step, that is, the control time of the on-off valve for the first gas blowing step and the first gas introduction step is changed based on the correspondence relationship memorized by the control device 20, so that The adsorption tower in the first gas blowing step is blown and the amount of gas introduced into the adsorption tower in the first gas introduction step is increased to a level as high as the helium concentration of the raw material helium gas G1 detected by the concentration sensor 24 . In addition, when the execution time of the first gas blowing step and the first gas introduction step is changed, when the execution time of the adsorption step is not changed, it is only necessary to change the execution time of the step-up and desorption steps. In addition, it suffices to perform the control as in the embodiment.

為了向處於第2氣體導入步驟之吸附塔中導入處於第2氣體吹送步驟之吸附塔之內部氣體,而打開連通流路之開關閥之任一者。於本實施形態中,實行第2氣體吹送步驟與第2氣體導入步驟,直至處於第2氣體吹送步驟之吸附塔之內部壓力與處於第2氣體導入步驟之吸附塔之內部壓力均等化。 In order to introduce the internal gas in the adsorption tower in the second gas blowing step into the adsorption tower in the second gas introduction step, any one of the on-off valves of the communication flow path is opened. In this embodiment, the second gas blowing step and the second gas introduction step are performed until the internal pressure of the adsorption tower in the second gas blowing step and the internal pressure of the adsorption tower in the second gas introduction step are equalized.

於吸附塔2a、2b、2c、2d之任一者中實行減壓步驟,同時於處於脫附步驟後且第2氣體導入步驟前之狀態之吸附塔2a、2b、2c、2d之另外任一者中實行洗淨步驟。處於洗淨步驟之吸附塔2a、2b、2c、2d之內部經由連通流路而與處於減壓步驟之吸附塔2a、2b、2c、2d之內部相通,又,與排氣流路相通。藉此,自處於減壓步驟之吸附塔吹送之內部氣體G4'於被導入至處於洗淨步驟之吸附塔中之後以排氣G3'之形式排出。自處於洗淨步驟之吸附塔排出之排氣G3'包含處於減壓步驟之吸附塔之內部氣體G4'中所含之氦氣。處於洗淨步驟之吸附塔內部自排氣流路藉由第1~第3切換閥42、45、48,被切換成經由真空泵50而與緩衝槽22相通之狀態、及經由第2釋出用配管44'而與常壓空間相通之狀態。藉此,排氣G3'被真空泵50所吸引,於再利用流路中流動而到達緩衝槽22,或自第2釋出用配管44'釋出至常壓空間。再者, 可將處於洗淨步驟之吸附塔內部設為不與真空泵50相通者,於該情形時,排氣流路藉由第1、第2切換閥42、45,被切換成不經由真空泵50而與緩衝槽22相通之狀態、及經由第1釋出用配管44而與常壓空間相通之狀態。排氣G3'經由再利用流路而到達緩衝槽22,或經由第1釋出用配管44而釋出至常壓空間。 Perform the decompression step in any of the adsorption towers 2a, 2b, 2c, and 2d, and at the same time in the adsorption towers 2a, 2b, 2c, and 2d in the state after the desorption step and before the second gas introduction step Washing steps are carried out among those. The inside of the adsorption towers 2a, 2b, 2c, 2d in the washing step communicates with the inside of the adsorption towers 2a, 2b, 2c, 2d in the depressurization step through the communication flow path, and communicates with the exhaust gas flow path. Thereby, the internal gas G4' blown from the adsorption tower in the depressurization step is discharged as exhaust gas G3' after being introduced into the adsorption tower in the washing step. The exhaust gas G3' discharged from the adsorption tower in the washing step contains helium gas contained in the internal gas G4' of the adsorption tower in the decompression step. The self-exhaust flow path inside the adsorption tower in the washing step is switched to the state of communicating with the buffer tank 22 via the vacuum pump 50 through the first to third switching valves 42, 45, and 48, and is used for the second release Piping 44' is in a state of communication with the normal pressure space. Thereby, the exhaust gas G3' is attracted by the vacuum pump 50, flows through the reuse flow path to reach the buffer tank 22, or is released from the second release pipe 44' to the normal pressure space. Furthermore, The inside of the adsorption tower in the cleaning step can be set to be not in communication with the vacuum pump 50. In this case, the exhaust gas flow path is switched to not pass through the vacuum pump 50 through the first and second switching valves 42, 45. The state where the buffer tank 22 is in communication and the state where it is in communication with the normal pressure space through the first release piping 44. The exhaust gas G3' reaches the buffer tank 22 through the reuse flow path, or is released to the normal pressure space through the first release piping 44.

於變壓式吸附裝置1中,自處於減壓步驟之吸附塔被吹送並導入至處於洗淨步驟之吸附塔中之氣體量被減少至導入至吸附塔2a、2b、2c、2d中之原料氦氣G1之氦濃度般之高程度。為此,如下所述,洗淨步驟之實行時間被設為固定,並且藉由第1流量控制閥15調節於連通流路中流動之氣體流量。進而,於本實施形態中,於導入至吸附塔2a、2b、2c、2d中之原料氦氣G1之氦濃度未達預先決定之設定值時實行洗淨步驟,於氦濃度為其設定值以上時不實行洗淨步驟。 In the pressure swing adsorption device 1, the amount of gas that is blown from the adsorption tower in the decompression step and introduced into the adsorption tower in the washing step is reduced to the raw materials introduced into the adsorption towers 2a, 2b, 2c, 2d The helium concentration of helium G1 is as high as it is. For this reason, as described below, the execution time of the washing step is set to be fixed, and the flow rate of the gas flowing in the communication flow path is adjusted by the first flow control valve 15. Furthermore, in this embodiment, when the helium concentration of the raw material helium gas G1 introduced into the adsorption towers 2a, 2b, 2c, 2d does not reach a predetermined set value, a washing step is performed, when the helium concentration is above the set value No cleaning steps are carried out.

為了向處於洗淨步驟之吸附塔中導入處於減壓步驟之吸附塔之內部氣體,而打開連通流路之開關閥之任一者。因此,導入至處於洗淨步驟之吸附塔中之氣體量係與洗淨步驟之實行時間和於連通流路中流動之氣體流量的積相對應。本實施形態之洗淨步驟之實行時間被設為預先決定之固定時間,且該固定之實行時間被記憶於控制裝置20中。 In order to introduce the internal gas of the adsorption tower in the depressurization step to the adsorption tower in the cleaning step, any one of the on-off valves communicating with the flow path is opened. Therefore, the amount of gas introduced into the adsorption tower in the washing step corresponds to the product of the execution time of the washing step and the gas flow rate flowing in the communication flow path. The execution time of the washing step of this embodiment is set to a predetermined fixed time, and the fixed execution time is memorized in the control device 20.

導入至處於洗淨步驟之吸附塔中之氣體量可藉由利用第1流量控制閥15調節於連通流路中流動之氣體之流量而變更。為此,導入至處於洗淨步驟之吸附塔中之氣體G4'於連通流路中之流量、與原料氦氣G1之氦濃度之間的預先決定之對應關係被記憶於控制裝置20中。 The amount of gas introduced into the adsorption tower in the washing step can be changed by adjusting the flow rate of the gas flowing in the communication flow path using the first flow control valve 15. For this reason, the predetermined correspondence between the flow rate of the gas G4' introduced into the adsorption tower in the cleaning step in the communication channel and the helium concentration of the raw material helium gas G1 is stored in the control device 20.

為了僅以由控制裝置20所記憶之實行時間實行洗淨步驟而控制開關閥,並且基於所記憶之對應關係利用第1流量控制閥15變更調節氣體流量,以使自處於減壓步驟之吸附塔被吹送並導入至處於洗淨步驟之吸附塔中之氣體量減少至由濃度感測器24所檢測到之原料氦氣 G1之氦濃度般之高程度。又,氦濃度之預先決定之設定值被記憶於控制裝置20中,於利用濃度感測器24檢測到之檢測氦濃度為記憶之設定值以上時,利用第1流量控制閥15控制之調節氣體流量被設為零而未實行洗淨步驟。於未實行洗淨步驟時,亦未實行減壓步驟。 In order to execute the washing step only at the execution time memorized by the control device 20, the on-off valve is controlled, and based on the memorized correspondence, the first gas flow control valve 15 is used to change the adjusted gas flow rate so that the adsorption tower is in the decompression step The amount of gas blown and introduced into the adsorption tower in the washing step is reduced to the raw material helium gas detected by the concentration sensor 24 The helium concentration of G1 is as high as it is. In addition, the predetermined set value of the helium concentration is memorized in the control device 20, and when the detected helium concentration detected by the concentration sensor 24 is more than the memorized set value, the regulated gas controlled by the first flow control valve 15 The flow rate is set to zero without performing the washing step. When the washing step is not performed, the decompression step is not performed.

被導入至處於洗淨步驟之吸附塔中之氣體量係與處於減壓步驟之吸附塔中之洗淨步驟開始時之內壓與洗淨步驟結束時之內壓的壓力差δP相對應。因此,只要藉由根據利用濃度感測器24檢測到之檢測氦濃度之變化變更壓力差δP,於洗淨步驟中將導入至吸附塔中之氣體量最佳化即可。例如,於檢測氦濃度為50vol%以上時,以其壓力差δP成為零之方式將利用第1流量控制閥15控制之調節氣體流量設為零而未實行洗淨步驟。又,於檢測氦濃度未達50vol%之情形時,只要以與檢測氦濃度之減少相對應而壓力差δP增加之方式,藉由實驗預先決定由第1流量控制閥15所調節之於連通流路中流動之氣體流量與原料氦氣G1之氦濃度之間的關係即可。例如,預先決定如於檢測氦濃度為30vol%時壓力差δP成為50kPa、於檢測氦濃度為15vol%時壓力差δP成為70kPa之於連通流路中流動之氣體流量與原料氦氣G1之氦濃度之間的關係。利用第1流量控制閥15進行之氣體流量之調節只要於純化處理步驟之1個循環中進行1次即可,但若原料氦氣G1之濃度變動較小,則亦可於複數個循環中進行1次。 The amount of gas introduced into the adsorption tower in the cleaning step corresponds to the pressure difference δP between the internal pressure at the beginning of the cleaning step in the adsorption tower at the decompression step and the internal pressure at the end of the cleaning step. Therefore, it is only necessary to optimize the amount of gas introduced into the adsorption tower in the washing step by changing the pressure difference δP according to the change in the detected helium concentration detected by the concentration sensor 24. For example, when the detected helium concentration is 50 vol% or more, the adjusted gas flow rate controlled by the first flow control valve 15 is set to zero so that the pressure difference δP becomes zero, and the washing step is not performed. In addition, when the detected helium concentration does not reach 50 vol%, as long as the pressure difference δP increases corresponding to the decrease in the detected helium concentration, the flow rate adjusted by the first flow control valve 15 to the communication flow is determined in advance by experiment The relationship between the flow rate of the gas flowing in the road and the helium concentration of the raw material helium gas G1 is sufficient. For example, the gas flow rate in the communication channel and the helium concentration of the raw material helium gas G1 are determined in advance, such as the pressure difference δP becomes 50 kPa when the detected helium concentration is 30 vol%, and the pressure difference δP becomes 70 kPa when the detected helium concentration is 15 vol%. The relationship between. The adjustment of the gas flow rate by the first flow control valve 15 only needs to be performed once in one cycle of the purification process step, but if the concentration variation of the raw material helium gas G1 is small, it can also be performed in multiple cycles 1 time.

作為用以將自處於減壓步驟之吸附塔被吹送並導入至處於洗淨步驟之吸附塔中之氣體量減少至原料氦氣G1之氦濃度般之高程度之變化例,亦可調節洗淨步驟之實行時間。於該情形時,由於將於連通流路中流動之氣體流量設為固定,故而不需要利用第1流量控制閥15進行之流量控制。 As an example of a change to reduce the amount of gas that is blown from the adsorption tower in the decompression step and introduced into the adsorption tower in the cleaning step to a high level like the helium concentration of the raw material helium gas G1, the cleaning can also be adjusted Implementation time of the step. In this case, since the flow rate of the gas flowing in the communication channel is fixed, the flow rate control by the first flow control valve 15 is not necessary.

即,導入至處於洗淨步驟之吸附塔中之氣體量由於與洗淨步驟之實行時間和於連通流路中流動之氣體流量的積相對應,因此藉由調 節洗淨步驟之實行時間,可變更其氣體量。 That is, the amount of gas introduced into the adsorption tower in the washing step corresponds to the product of the execution time of the washing step and the gas flow rate flowing in the communication flow path. The amount of gas can be changed to save the time of the cleaning step.

為此,洗淨步驟之實行時間與原料氦氣G1之氦濃度之間的預先決定之對應關係被記憶於控制裝置20中。基於由控制裝置20所記憶之對應關係而變更洗淨步驟之實行時間、即用於洗淨步驟之開關閥之控制時間,以使自處於減壓步驟之吸附塔被吹送並導入至處於洗淨步驟之吸附塔中之氣體量減少至由濃度感測器24所檢測到之原料氦氣G1之氦濃度般之高程度。再者,於變更洗淨步驟之實行時間之情形時,於不變更吸附步驟之實行時間之情形時,只要變更升壓、脫附步驟之實行時間即可。此外只要與實施形態同樣地進行控制即可。 For this reason, the predetermined correspondence between the execution time of the washing step and the helium concentration of the raw material helium gas G1 is stored in the control device 20. The execution time of the washing step, that is, the control time of the on-off valve used for the washing step is changed based on the correspondence relationship memorized by the control device 20, so that the adsorption tower from the depressurization step is blown and introduced to be in the washing The amount of gas in the adsorption tower of the step is reduced to a level as high as the helium concentration of the raw material helium gas G1 detected by the concentration sensor 24. Furthermore, when the execution time of the washing step is changed, and when the execution time of the adsorption step is not changed, it is only necessary to change the execution time of the step-up and desorption steps. In addition, it suffices to perform the control as in the embodiment.

根據上述實施形態及變化例,藉由使用變壓式吸附裝置1反覆進行純化處理循環,可將原料氦氣G1純化,而連續地獲得純化氦氣G2。於每一純化處理循環中進行2次吸附塔之內部壓力差之減少。藉由吸附塔之內部壓力差之減少,處於第1、第2氣體吹送步驟之吸附塔之內部氣體被導入至處於第1、第2氣體導入步驟之吸附塔中,因此可使其內部氣體中所含之雜質氣體吸附於吸附劑,並回收未吸附於吸附劑之純化氦氣。又,藉由在脫附步驟中利用真空泵將吸附塔之內部減壓至未達大氣壓,可實行真空脫附步驟。藉由真空脫附步驟可恢復吸附劑之性能。於各純化處理循環中進行2次吸附塔之內部壓力差之減少,且藉由真空脫附步驟恢復吸附劑之性能,藉此可利用協同效應大幅提高氦氣之回收率。進而,藉由將被導入至處於第1氣體導入步驟之吸附塔中之氣體量增加至原料氦氣G1之氦濃度般之高程度,可提高氦氣之回收率。又,藉由將導入至處於洗淨步驟之吸附塔中之氣體量減少至原料氦氣G1之氦濃度般之高程度,可防止氦氣之回收率不必要地降低。因此,例如於使用如自光纖之製造步驟等排出之氦氣作為原料氦氣之情形時,可靈活地應對原料氣體之濃度變動,而可高效率地獲得目標純度之氦氣。並且,藉由將排氣G3、G3'中所含之氦氣 再利用,亦可提高回收率。 According to the above-described embodiment and modified example, by repeatedly performing the purification process cycle using the pressure swing adsorption apparatus 1, the raw material helium gas G1 can be purified, and purified helium gas G2 can be continuously obtained. In each purification treatment cycle, the internal pressure difference of the adsorption tower is reduced twice. By reducing the internal pressure difference of the adsorption tower, the internal gas in the adsorption tower in the first and second gas blowing steps is introduced into the adsorption tower in the first and second gas introduction steps, so it can be made into the internal gas The impurity gas contained is adsorbed on the adsorbent, and the purified helium gas not adsorbed on the adsorbent is recovered. In addition, by depressurizing the inside of the adsorption tower to a subatmospheric pressure using a vacuum pump in the desorption step, a vacuum desorption step can be performed. The performance of the adsorbent can be restored by the vacuum desorption step. In each purification treatment cycle, the internal pressure difference of the adsorption tower is reduced twice, and the performance of the adsorbent is restored by the vacuum desorption step, whereby the synergistic effect can be used to greatly improve the recovery rate of helium. Furthermore, by increasing the amount of gas introduced into the adsorption tower in the first gas introduction step to a level as high as the helium concentration of the raw material helium gas G1, the recovery rate of helium gas can be improved. In addition, by reducing the amount of gas introduced into the adsorption tower in the washing step to such a high level as the helium concentration of the raw material helium gas G1, the recovery rate of helium gas can be prevented from unnecessarily decreasing. Therefore, for example, in the case of using helium gas discharged from the manufacturing process of the optical fiber as the raw material helium gas, it is possible to flexibly respond to changes in the concentration of the raw material gas, and it is possible to efficiently obtain the target purity helium gas. And, by the helium contained in the exhaust gas G3, G3' Reuse can also increase the recovery rate.

[實施例] [Example]

[實施例1] [Example 1]

使用氦氣之純化系統α,依據上述實施形態對原料氦氣G1進行純化。 Purification system α using helium gas is used to purify the raw material helium gas G1 according to the above embodiment.

關於原料氦氣G1,將氦濃度設為30.0vol%,將作為雜質氣體之空氣之濃度設為70.0vol%。 Regarding the raw material helium gas G1, the helium concentration is set to 30.0 vol%, and the concentration of air as an impurity gas is set to 70.0 vol%.

向變壓式吸附裝置1之原料氦氣G1之供給流量係設為300NL/h。 The supply flow rate of the raw material helium gas G1 to the pressure swing adsorption device 1 is set to 300 NL/h.

吸附塔2a、2b、2c、2d各者為不鏽鋼製,且具有內徑37mm、內部尺寸高度1000mm之圓筒形狀,容量為約1L。於吸附塔2a、2b、2c、2d各者中填充積層有作為吸附劑之活性碳約0.7L、沸石約0.3L。 Each of the adsorption towers 2a, 2b, 2c, and 2d is made of stainless steel, and has a cylindrical shape with an inner diameter of 37 mm and an inner dimension height of 1000 mm, and a capacity of about 1 L. Each of the adsorption towers 2a, 2b, 2c, and 2d is filled with and stacked with about 0.7L of activated carbon as adsorbent and about 0.3L of zeolite.

作為變壓式吸附裝置1中之純化處理步驟,於吸附塔2a、2b、2c、2d各者中,依序實行吸附步驟130秒鐘、第1氣體吹送步驟15秒鐘、減壓步驟25秒鐘、第2氣體吹送步驟15秒鐘、排放壓力脫附步驟10秒鐘、真空脫附步驟80秒鐘、洗淨步驟25秒鐘、第2氣體導入步驟15秒鐘、待機狀態75秒鐘、第1氣體導入步驟15秒鐘、升壓步驟115秒鐘。自運轉狀態(a)之開始至運轉狀態(t)之結束之1個循環時間為520秒鐘。 As a purification treatment step in the pressure swing adsorption apparatus 1, in each of the adsorption towers 2a, 2b, 2c, and 2d, the adsorption step is performed in sequence for 130 seconds, the first gas blowing step for 15 seconds, and the decompression step for 25 seconds Bell, second gas blowing step 15 seconds, discharge pressure desorption step 10 seconds, vacuum desorption step 80 seconds, cleaning step 25 seconds, second gas introduction step 15 seconds, standby state 75 seconds, The first gas introduction step is 15 seconds, and the pressure increase step is 115 seconds. The cycle time from the start of the operating state (a) to the end of the operating state (t) is 520 seconds.

處於吸附步驟之吸附塔2a、2b、2c、2d之內部壓力之最大值係設為0.8MPa(表壓)。第1氣體吹送步驟之開始時之吸附塔內部壓力與結束時之吸附塔內部壓力的壓力差係設為350kPa。減壓步驟之開始時之吸附塔內部壓力與結束時之吸附塔內部壓力的壓力差係設為50kPa。進行第2氣體吹送步驟與第2氣體導入步驟,直至處於兩步驟之2個吸附塔之內部壓力變得均等。處於真空脫附步驟之末期之吸附塔之內部壓力係設為-95kPa(表壓)。 The maximum value of the internal pressure of the adsorption towers 2a, 2b, 2c, 2d in the adsorption step is set to 0.8 MPa (gauge pressure). The pressure difference between the internal pressure of the adsorption tower at the beginning of the first gas blowing step and the internal pressure of the adsorption tower at the end was set to 350 kPa. The pressure difference between the internal pressure of the adsorption tower at the beginning of the decompression step and the internal pressure of the adsorption tower at the end was set to 50 kPa. The second gas blowing step and the second gas introduction step are performed until the internal pressure of the two adsorption towers in the two steps becomes equal. The internal pressure of the adsorption tower at the end of the vacuum desorption step was set to -95 kPa (gauge pressure).

排氣G3、G3'未進行再利用而釋出至常壓空間。 Exhaust gas G3, G3' is released to the normal pressure space without being reused.

純化氦氣G2之流量為65.7NL/h,雜質濃度為0.8vol ppm(利用島津製作所製造之GC(Gas Chromatograph,氣相層析儀)-PDD(Pulse Discharge Detector,脈衝放電檢測器)進行測定),氦回收率為73.0%。 The flow rate of purified helium G2 is 65.7 NL/h, and the impurity concentration is 0.8 vol ppm (measured by Shimadzu Corporation's GC (Gas Chromatograph, gas chromatograph)-PDD (Pulse Discharge Detector, pulse discharge detector)) The helium recovery rate is 73.0%.

[實施例2] [Example 2]

自實施例1之穩定狀態藉由變壓式吸附裝置1中之吸附步驟時間之調整而變更吸附步驟之重複間隔,將純化氦氣G2之流量設為68.2NL/h,將雜質濃度設為8.5vol ppm。此外係設為與實施例1同樣。該情形時之氦回收率為75.8%。 From the steady state of Example 1, the repetition interval of the adsorption step was changed by adjusting the adsorption step time in the pressure swing adsorption device 1, the flow rate of the purified helium gas G2 was set to 68.2NL/h, and the impurity concentration was set to 8.5 vol ppm. It is assumed that it is the same as in Example 1. In this case, the helium recovery rate was 75.8%.

[實施例3] [Example 3]

假定原料氦氣G1自實施例1之穩定狀態產生濃度變動,將原料氦氣G1之氦濃度變更為50.0vol%,將空氣濃度變更為50.0vol%。未實施洗淨步驟與減壓步驟。藉由變壓式吸附裝置1中之吸附步驟時間之調整而變更吸附步驟之重複間隔,將純化氦氣G2之流量設為121.4NL/h,將雜質濃度設為0.9vol ppm。此外係設為與實施例1同樣。該情形時之氦回收率為80.9%。 Assuming that the raw helium gas G1 has a concentration change from the steady state of Example 1, the helium concentration of the raw helium gas G1 is changed to 50.0 vol%, and the air concentration is changed to 50.0 vol%. The washing step and decompression step were not implemented. The repetition interval of the adsorption step was changed by adjusting the adsorption step time in the pressure swing adsorption device 1, the flow rate of the purified helium gas G2 was set to 121.4 NL/h, and the impurity concentration was set to 0.9 vol ppm. It is assumed that it is the same as in Example 1. In this case, the helium recovery rate was 80.9%.

[實施例4] [Example 4]

假定原料氦氣G1自實施例1之穩定狀態產生濃度變動,將原料氦氣G1之氦濃度變更為15.0vol%,將空氣濃度變更為85.0vol%。第1氣體吹送步驟之開始時之吸附塔內部壓力與結束時之吸附塔內部壓力的壓力差係設為50kPa。又,減壓步驟之開始時之吸附塔內部壓力與結束時之內部壓力的壓力差係設為70kPa。藉由變壓式吸附裝置1中之吸附步驟時間之調整而變更吸附步驟之重複間隔,將純化氦氣G2之流量設為27.5NL/h,將雜質濃度設為0.9vol ppm。此外係設為與實施例1同樣。該情形時之氦回收率為61.2%。 Assuming that the raw helium gas G1 has a concentration change from the steady state of Example 1, the helium concentration of the raw helium gas G1 is changed to 15.0 vol%, and the air concentration is changed to 85.0 vol%. The pressure difference between the internal pressure of the adsorption tower at the beginning of the first gas blowing step and the internal pressure of the adsorption tower at the end was set to 50 kPa. In addition, the pressure difference between the internal pressure of the adsorption tower at the beginning of the decompression step and the internal pressure at the end was set to 70 kPa. The repetition interval of the adsorption step was changed by adjusting the adsorption step time in the pressure swing adsorption device 1, the flow rate of the purified helium gas G2 was set to 27.5 NL/h, and the impurity concentration was set to 0.9 vol ppm. It is assumed that it is the same as in Example 1. In this case, the helium recovery rate was 61.2%.

[實施例5] [Example 5]

假定原料氦氣G1自實施例1之穩定狀態產生濃度變動,將原料氦氣G1之氦濃度變更為50.0vol%,將空氣濃度變更為50.0vol%。藉由變壓式吸附裝置1中之吸附步驟時間之調整而變更吸附步驟之重複間隔,將純化氦氣G2之流量設為116.1NL/h,將雜質濃度設為0.8vol ppm。此外係設為與實施例1同樣。該情形時之氦回收率為77.4%。 Assuming that the raw helium gas G1 has a concentration change from the steady state of Example 1, the helium concentration of the raw helium gas G1 is changed to 50.0 vol%, and the air concentration is changed to 50.0 vol%. The repetition interval of the adsorption step was changed by adjusting the adsorption step time in the pressure swing adsorption device 1, the flow rate of the purified helium gas G2 was set to 116.1 NL/h, and the impurity concentration was set to 0.8 vol ppm. It is assumed that it is the same as in Example 1. In this case, the helium recovery rate was 77.4%.

[實施例6] [Example 6]

將自變壓式吸附裝置1排出之排氣G3、G3'之50%量經由再利用流路而混入至原料氦氣G1中。藉由變壓式吸附裝置1中之吸附步驟時間之調整而變更吸附步驟之重複間隔,將純化氦氣G2之流量設為72.6NL/h,將雜質濃度設為0.8vol ppm。此外係設為與實施例1同樣。該情形時之所有步驟之氦回收率成為80.7%。 50% of the exhaust gases G3 and G3' discharged from the pressure swing adsorption device 1 are mixed into the raw material helium gas G1 through the reuse flow path. The repetition interval of the adsorption step is changed by adjusting the adsorption step time in the pressure swing adsorption device 1, the flow rate of the purified helium gas G2 is set to 72.6 NL/h, and the impurity concentration is set to 0.8 vol ppm. It is assumed that it is the same as in Example 1. In this case, the helium recovery rate of all steps becomes 80.7%.

[實施例7] [Example 7]

自實施例1之穩定狀態將第1氣體吹送步驟之開始時之吸附塔內部壓力與結束時之吸附塔內部壓力的壓力差設為50kPa。又,將減壓步驟之開始時之吸附塔內部壓力與結束時之內部壓力的壓力差設為70kPa。藉由變壓式吸附裝置1中之吸附步驟時間之調整而變更吸附步驟之重複間隔,將純化氦氣G2之流量設為60.7NL/h,將雜質濃度設為0.9vol ppm。此外係設為與實施例1同樣。該情形時之氦回收率為67.4%。 From the steady state of Example 1, the pressure difference between the internal pressure of the adsorption tower at the beginning of the first gas blowing step and the internal pressure of the adsorption tower at the end was set to 50 kPa. In addition, the pressure difference between the internal pressure of the adsorption tower at the beginning of the decompression step and the internal pressure at the end was set to 70 kPa. The repetition interval of the adsorption step is changed by adjusting the adsorption step time in the pressure swing adsorption device 1, the flow rate of the purified helium gas G2 is set to 60.7 NL/h, and the impurity concentration is set to 0.9 vol ppm. It is assumed that it is the same as in Example 1. In this case, the helium recovery rate was 67.4%.

[比較例1] [Comparative Example 1]

未進行第1氣體吹送步驟、第1氣體導入步驟及真空脫附步驟,並將處於排放壓力脫附步驟之末期之吸附塔之內部壓力設為5kPa(表壓),而進行原料氦氣G1之純化。藉由變壓式吸附裝置1中之吸附步驟時間之調整而變更吸附步驟之重複間隔,將純化氦氣G2之流量設為55.6NL/h,將雜質濃度設為0.9vol ppm。此外係設為與實施例1同 樣。該情形時之氦回收率成為61.8%。 The first gas blowing step, the first gas introduction step and the vacuum desorption step are not performed, and the internal pressure of the adsorption tower at the end of the discharge pressure desorption step is set to 5 kPa (gauge pressure), and the raw material helium gas G1 is carried out purification. The repetition interval of the adsorption step is changed by adjusting the adsorption step time in the pressure swing adsorption device 1, the flow rate of the purified helium gas G2 is set to 55.6 NL/h, and the impurity concentration is set to 0.9 vol ppm. In addition, it is assumed to be the same as in Example 1. kind. In this case, the helium recovery rate becomes 61.8%.

[比較例2] [Comparative Example 2]

未進行第1氣體吹送步驟與第1氣體導入步驟,而進行原料氦氣G1之純化。藉由變壓式吸附裝置1中之吸附步驟時間之調整而變更吸附步驟之重複間隔,將純化氦氣G2之流量設為57.7NL/h,將雜質濃度設為0.8vol ppm。此外係設為與實施例1同樣。該情形時之氦回收率成為64.1%。 The first gas blowing step and the first gas introduction step were not performed, and the raw material helium gas G1 was purified. The repetition interval of the adsorption step is changed by adjusting the adsorption step time in the pressure swing adsorption device 1, the flow rate of the purified helium gas G2 is set to 57.7 NL/h, and the impurity concentration is set to 0.8 vol ppm. It is assumed that it is the same as in Example 1. In this case, the helium recovery rate becomes 64.1%.

[比較例3] [Comparative Example 3]

未進行真空脫附步驟,並將處於排放壓力脫附步驟之末期之吸附塔之內部壓力設為5kPa(表壓),而進行原料氦氣G1之純化。藉由變壓式吸附裝置1中之吸附步驟時間之調整而變更吸附步驟之重複間隔,將純化氦氣G2之流量設為57.2NL/h,將雜質濃度設為0.9vol ppm。此外係設為與實施例1同樣。該情形時之氦回收率成為63.6%。 The vacuum desorption step was not performed, and the internal pressure of the adsorption tower at the end of the discharge pressure desorption step was set to 5 kPa (gauge pressure), and the raw material helium gas G1 was purified. The repetition interval of the adsorption step was changed by adjusting the adsorption step time in the pressure swing adsorption device 1, the flow rate of the purified helium gas G2 was set to 57.2 NL/h, and the impurity concentration was set to 0.9 vol ppm. It is assumed that it is the same as in Example 1. In this case, the helium recovery rate becomes 63.6%.

[比較例4] [Comparative Example 4]

未進行第1氣體吹送步驟、第1氣體導入步驟及真空脫附步驟,且處於排放壓力脫附步驟之末期之吸附塔之內部壓力係設為5kPa(表壓),而進行原料氦氣G1之純化。藉由變壓式吸附裝置1中之吸附步驟時間之調整而變更吸附步驟之重複間隔,將純化氦氣G2之流量設為64.7NL/h,將雜質濃度設為8.7vol ppm。此外係設為與實施例1同樣。該情形時之氦回收率成為71.9%。 The first gas blowing step, the first gas introduction step, and the vacuum desorption step were not performed, and the internal pressure of the adsorption tower at the end of the discharge pressure desorption step was set to 5 kPa (gauge pressure), and the raw material helium gas G1 was carried out purification. The repetition interval of the adsorption step was changed by adjusting the adsorption step time in the pressure swing adsorption device 1, the flow rate of the purified helium gas G2 was set to 64.7 NL/h, and the impurity concentration was set to 8.7 vol ppm. It is assumed that it is the same as in Example 1. In this case, the helium recovery rate becomes 71.9%.

[比較例5] [Comparative Example 5]

未進行第1氣體吹送步驟、第1氣體導入步驟及真空脫附步驟,且處於排放壓力脫附步驟之末期之吸附塔之內部壓力係設為5kPa(表壓),而進行原料氦氣G1之純化。藉由變壓式吸附裝置1中之吸附步驟時間之調整而變更吸附步驟之重複間隔,將純化氦氣G2之流量設為100.5NL/h,將雜質濃度設為0.9vol ppm。此外係設為與實施例3同 樣。該情形時之氦回收率成為67.0%。 The first gas blowing step, the first gas introduction step, and the vacuum desorption step were not performed, and the internal pressure of the adsorption tower at the end of the discharge pressure desorption step was set to 5 kPa (gauge pressure), and the raw material helium gas G1 was carried out purification. The repetition interval of the adsorption step was changed by adjusting the adsorption step time in the pressure swing adsorption device 1, the flow rate of the purified helium gas G2 was set to 100.5 NL/h, and the impurity concentration was set to 0.9 vol ppm. In addition, it is assumed to be the same as in Example 3. kind. In this case, the helium recovery rate becomes 67.0%.

[比較例6] [Comparative Example 6]

未進行第1氣體吹送步驟、第1氣體導入步驟及真空脫附步驟,且處於排放壓力脫附步驟之末期之吸附塔之內部壓力係設為5kPa(表壓),而進行原料氦氣G1之純化。藉由變壓式吸附裝置1中之吸附步驟時間之調整而變更吸附步驟之重複間隔,將純化氦氣G2之流量設為25.1NL/h,將雜質濃度設為0.9vol ppm。此外係設為與實施例4同樣。該情形時之氦回收率成為55.7%。 The first gas blowing step, the first gas introduction step, and the vacuum desorption step were not performed, and the internal pressure of the adsorption tower at the end of the discharge pressure desorption step was set to 5 kPa (gauge pressure), and the raw material helium gas G1 was carried out purification. The repetition interval of the adsorption step was changed by adjusting the adsorption step time in the pressure swing adsorption device 1, the flow rate of the purified helium gas G2 was set to 25.1 NL/h, and the impurity concentration was set to 0.9 vol ppm. The system is the same as in Example 4. In this case, the helium recovery rate becomes 55.7%.

根據比較例1與2之氦回收率之差,由真空脫附步驟所產生之氦回收率之提高度為2.3%左右。根據比較例1與3之氦回收率之差,由將吸附塔之內部壓力差之減少次數自1次增加至2次所產生之氦回收率之提高度為1.8%左右。因此,先前一直認為即便將增加吸附塔之內部壓力差之減少次數與真空脫附步驟加以組合,回收率之提高度亦為4.1%左右。然而,根據實施例1之氦回收率與比較例1、3之氦回收率之差,由該組合所產生之氦回收率之提高度為8.9%~9.4%左右。因此,可確認到藉由該組合而發揮出協同效應。 According to the difference between the helium recovery rates of Comparative Examples 1 and 2, the improvement in the helium recovery rate generated by the vacuum desorption step is about 2.3%. According to the difference between the helium recovery rates of Comparative Examples 1 and 3, the increase in the helium recovery rate generated by increasing the number of reductions in the internal pressure difference of the adsorption tower from 1 to 2 is about 1.8%. Therefore, it has been previously thought that even if the increase in the number of reductions in the internal pressure difference of the adsorption tower is combined with the vacuum desorption step, the improvement in recovery rate is about 4.1%. However, according to the difference between the helium recovery rate of Example 1 and the helium recovery rates of Comparative Examples 1 and 3, the improvement of the helium recovery rate generated by this combination is about 8.9% to 9.4%. Therefore, it can be confirmed that the combination exerts a synergistic effect.

又,根據實施例1與7可確認到,藉由將自處於第1氣體吹送步驟之吸附塔向處於第1氣體導入步驟之吸附塔導入之氣體量增加至原料氦氣之氦濃度般之高程度,並將導入至處於洗淨步驟之吸附塔中之氣體量減少至原料氦氣之氦濃度般之高程度,氦氣之回收率提高。 In addition, according to Examples 1 and 7, it can be confirmed that by increasing the amount of gas introduced from the adsorption tower in the first gas blowing step to the adsorption tower in the first gas introduction step to a helium concentration as high as the raw material helium gas Degree, and the amount of gas introduced into the adsorption tower in the washing step is reduced to a high level like the helium concentration of the raw material helium, and the recovery rate of helium is increased.

根據實施例1與6可確認到,藉由將排氣G3、G3'經由再利用流路而混入至原料氦氣G1中,氦回收率提高。 It can be confirmed from Examples 1 and 6 that the exhaust gas G3 and G3' are mixed into the raw material helium gas G1 through the reuse flow path to increase the helium recovery rate.

根據實施例3與5可確認到,藉由在原料氣體氦濃度較高之情形時未實施洗淨步驟,氦回收率提高。 It can be confirmed from Examples 3 and 5 that the helium recovery rate is improved by not performing the washing step when the raw material gas has a high helium concentration.

根據實施例1與2可確認到,於無需提高氦純度之情形時,可提高氦回收率。 It can be confirmed from Examples 1 and 2 that the helium recovery rate can be increased when there is no need to increase the purity of helium.

根據實施例1與比較例4、實施例3與比較例5、實施例4與比較例6可確認到,藉由將增加吸附塔之內部壓力差之減少次數與真空脫附步驟加以組合,可提高純化氦之純度與氦回收率。 According to Example 1 and Comparative Example 4, Example 3 and Comparative Example 5, Example 4 and Comparative Example 6, it can be confirmed that by combining the reduction times of increasing the internal pressure difference of the adsorption tower and the vacuum desorption step, Improve the purity and recovery rate of purified helium.

本發明並不限定於上述實施形態、實施例、變化例,且可於不脫離本發明思想之範圍內進行各種變更。例如,吸附裝置中之吸附塔之數量並不限定於4塔,可為3塔亦可為5塔以上。進而,各純化處理循環中之吸附塔之內部壓力差之減少次數亦可為3次以上。又,於上述實施形態中,藉由向吸附塔中導入純化氦氣而實行升壓步驟,但亦可藉由向吸附塔中導入原料氣體以代替純化氦氣,而實行升壓步驟。進而,不僅可向處於第1氣體導入步驟之吸附塔中導入來自處於第1氣體吹送步驟之吸附塔之內部氣體,亦可導入原料氣體。 The present invention is not limited to the above-mentioned embodiments, examples, and modified examples, and various changes can be made without departing from the scope of the inventive concept. For example, the number of adsorption towers in the adsorption device is not limited to 4 towers, and may be 3 towers or more than 5 towers. Furthermore, the number of reductions in the internal pressure difference of the adsorption tower in each purification treatment cycle may be more than 3 times. In addition, in the above-mentioned embodiment, the pressure increasing step is performed by introducing purified helium gas into the adsorption tower, but the pressure increasing step may also be performed by introducing raw material gas into the adsorption tower instead of purifying helium gas. Furthermore, not only the internal gas from the adsorption tower in the first gas blowing step but also the raw material gas can be introduced into the adsorption tower in the first gas introduction step.

1‧‧‧變壓式吸附裝置 1‧‧‧ Pressure swing adsorption device

2a‧‧‧吸附塔 2a‧‧‧Adsorption tower

2b‧‧‧吸附塔 2b‧‧‧Adsorption tower

2c‧‧‧吸附塔 2c‧‧‧Adsorption tower

2d‧‧‧吸附塔 2d‧‧‧adsorption tower

18‧‧‧第3流量控制閥 18‧‧‧ Third flow control valve

21‧‧‧流量感測器 21‧‧‧Flow sensor

22‧‧‧緩衝槽 22‧‧‧Buffer tank

22a‧‧‧儲藏量感測器 22a‧‧‧Storage sensor

23‧‧‧壓縮機 23‧‧‧Compressor

24‧‧‧濃度感測器 24‧‧‧Concentration sensor

25‧‧‧第4流量控制閥 25‧‧‧ 4th flow control valve

26‧‧‧壓力調節閥 26‧‧‧pressure regulating valve

41‧‧‧第1再利用配管(再利用流路) 41‧‧‧The first reuse piping (reuse flow path)

42‧‧‧第1切換閥 42‧‧‧First switching valve

43‧‧‧第2再利用配管(再利用流路) 43‧‧‧The second reuse piping (reuse flow path)

44‧‧‧第1釋出用配管 44‧‧‧The first release piping

44'‧‧‧第2釋出用配管 44'‧‧‧ 2nd release piping

45‧‧‧第2切換閥 45‧‧‧ 2nd switching valve

46‧‧‧第3再利用配管(再利用流路) 46‧‧‧The third reuse piping (reuse flow path)

47‧‧‧第4再利用配管(再利用流路) 47‧‧‧ 4th reuse piping (reuse flow path)

48‧‧‧第3切換閥 48‧‧‧ Third switching valve

49‧‧‧第5再利用配管(再利用流路) 49‧‧‧The fifth reuse piping (reuse flow path)

50‧‧‧真空泵 50‧‧‧Vacuum pump

G1‧‧‧原料氦氣 G1‧‧‧raw material helium

G2‧‧‧純化氦氣 G2‧‧‧Purified helium

G3‧‧‧排氣 G3‧‧‧Exhaust

G3'‧‧‧排氣 G3'‧‧‧Exhaust

α‧‧‧純化系統 α‧‧‧Purification system

Claims (17)

一種氦氣之純化方法,其係於使用具有複數個吸附塔之變壓式吸附裝置,對包含雜質氣體之原料氦氣進行純化時,於上述吸附塔各者中,收納優先於氦氣而吸附雜質氣體之吸附劑,向上述吸附塔各者中依序導入上述原料氦氣,於上述吸附塔各者中,依序實行如下步驟:吸附步驟,其使所導入之上述原料氦氣中所含之雜質氣體於加壓下吸附於上述吸附劑,並且排出未吸附於上述吸附劑之純化氦氣;脫附步驟,其使上述雜質氣體自吸附劑脫附並作為排氣而排出;及升壓步驟,其使內部壓力上升;實行自處於上述吸附步驟後且上述脫附步驟前之狀態之上述吸附塔之任一者吹送內部氣體之第1氣體吹送步驟,同時實行將該所吹送之內部氣體導入至處於上述脫附步驟後且上述升壓步驟前之狀態之上述吸附塔之另外任一者中之第1氣體導入步驟,實行自處於上述第1氣體吹送步驟後且上述脫附步驟前之狀態之上述吸附塔之任一者吹送內部氣體之第2氣體吹送步驟,同時實行將該所吹送之內部氣體導入至處於上述脫附步驟後且上述第1氣體導入步驟前之狀態之上述吸附塔之另外任一者中之第2氣體導入步驟,於上述脫附步驟中,利用真空泵將上述吸附塔之內部減壓至未達大氣壓。 A method for purifying helium gas is to use a pressure swing adsorption device with a plurality of adsorption towers to purify the raw material helium gas containing impurity gas, in each of the above adsorption towers, the adsorption is preferentially adsorbed over helium gas The adsorbent of the impurity gas introduces the raw material helium gas into each of the adsorption towers in sequence, and in each of the adsorption towers, the following steps are sequentially performed: an adsorption step that causes the introduced raw material helium gas to be contained The impurity gas is adsorbed on the adsorbent under pressure, and purified helium gas that is not adsorbed on the adsorbent is discharged; a desorption step, which desorbs the impurity gas from the adsorbent and discharges it as exhaust gas; and The step of raising the internal pressure; performing the first gas blowing step of blowing the internal gas from any one of the adsorption towers in the state after the adsorption step and before the desorption step, and simultaneously carrying out the internal gas blown The first gas introduction step of any one of the adsorption towers in the state after the desorption step and before the pressure increase step is performed after the first gas blowing step and before the desorption step The second gas blowing step of blowing the internal gas in any of the adsorption towers in the state, and simultaneously introducing the blown internal gas to the adsorption tower in a state after the desorption step and before the first gas introduction step In the second gas introduction step of any one of the other, in the desorption step, the inside of the adsorption tower is depressurized to a subatmospheric pressure using a vacuum pump. 如請求項1之氦氣之純化方法,其中將自處於上述第1氣體吹送步驟之上述吸附塔被吹送並導入至處於上述第1氣體導入步驟之上述吸附塔中之氣體量增加至上述原料氦氣之氦濃度般之高程 度。 The purification method of helium gas according to claim 1, wherein the amount of gas from the adsorption tower in the first gas blowing step is blown and introduced into the adsorption tower in the first gas introduction step to the raw material helium Elevation of helium concentration of gas degree. 如請求項1或2之氦氣之純化方法,其中於處於上述第1氣體吹送步驟後且上述第2氣體吹送步驟前之狀態之上述吸附塔之任一者中,實行減少內部壓力之減壓步驟,同時於處於上述脫附步驟後且上述第2氣體導入步驟前之狀態之上述吸附塔之另外任一者中,實行於導入處於上述減壓步驟之上述吸附塔之內部氣體後作為排氣而排出之洗淨步驟。 A purification method of helium gas as claimed in claim 1 or 2, wherein in any of the adsorption towers in a state after the first gas blowing step and before the second gas blowing step, decompression for reducing the internal pressure is performed At the same time, in any one of the adsorption towers in the state after the desorption step and before the second gas introduction step, it is performed as the exhaust after introducing the internal gas of the adsorption tower in the decompression step And the washing step of discharge. 如請求項3之氦氣之純化方法,其中將自處於上述減壓步驟之上述吸附塔被吹送並導入至處於上述洗淨步驟之上述吸附塔中之氣體量減少至上述原料氦氣之氦濃度般之高程度。 The purification method of helium gas according to claim 3, wherein the amount of gas blown from the adsorption tower in the depressurization step and introduced into the adsorption tower in the cleaning step is reduced to the helium concentration of the raw material helium gas So high. 如請求項4之氦氣之純化方法,其中於上述原料氦氣之氦濃度為預先決定之設定值以上時,不實行上述洗淨步驟。 The method for purifying helium gas according to claim 4, wherein when the helium concentration of the raw material helium gas is greater than or equal to a predetermined set value, the above washing step is not performed. 如請求項1或2之氦氣之純化方法,其中向上述原料氦氣之向上述吸附塔各者之導入流路中導入上述排氣,以將上述排氣再利用作上述原料氦氣。 The method for purifying helium gas according to claim 1 or 2, wherein the exhaust gas is introduced into the introduction flow path of the raw material helium gas to each of the adsorption towers to reuse the exhaust gas as the raw material helium gas. 如請求項3之氦氣之純化方法,其中向上述原料氦氣之向上述吸附塔各者之導入流路中導入上述排氣,以將上述排氣再利用作上述原料氦氣。 The method for purifying helium gas according to claim 3, wherein the exhaust gas is introduced into the introduction flow path of the raw material helium gas to each of the adsorption towers to reuse the exhaust gas as the raw material helium gas. 如請求項4之氦氣之純化方法,其中向上述原料氦氣之向上述吸附塔各者之導入流路中導入上述排氣,以將上述排氣再利用作上述原料氦氣。 The method for purifying helium gas according to claim 4, wherein the exhaust gas is introduced into the introduction flow path of the raw material helium gas to each of the adsorption towers to reuse the exhaust gas as the raw material helium gas. 如請求項5之氦氣之純化方法,其中向上述原料氦氣之向上述吸附塔各者之導入流路中導入上述排氣,以將上述排氣再利用作上述原料氦氣。 The purification method of helium gas according to claim 5, wherein the exhaust gas is introduced into the introduction flow path of the raw material helium gas to each of the adsorption towers to reuse the exhaust gas as the raw material helium gas. 一種氦氣之純化系統,其具備具有複數個吸附塔之變壓式吸附裝置,且 於上述吸附塔各者中,收納優先於氦氣而吸附雜質氣體之吸附劑,上述變壓式吸附裝置具有:原料氣體導入流路,其用以向上述吸附塔各者中導入上述原料氦氣;純化氣體流路,其用以自上述吸附塔各者排出純化氦氣;排氣流路,其用以自上述吸附塔各者排出排氣;連通流路,其用以使上述吸附塔之任一者與另外任一者相互連通;原料氣體導入路開關閥,其將上述吸附塔各者與上述原料氣體導入流路之間個別地進行開關;純化氣體路開關閥,其將上述吸附塔各者與上述純化氣體流路之間個別地進行開關;排氣路開關閥,其將上述吸附塔各者與排氣流路之間個別地進行開關;及連通路開關閥,其將上述吸附塔各者與上述連通流路之間個別地進行開關;上述開關閥各者被設為以可個別地進行開關動作之方式具有開關用致動器之自動閥,並且與控制裝置連接,於上述吸附塔各者中,利用上述控制裝置控制上述開關閥各者,以依序實行如下步驟:吸附步驟,其使所導入之上述原料氦氣中所含之雜質氣體於加壓下吸附於上述吸附劑,並且排出未吸附於上述吸附劑之純化氦氣;脫附步驟,其使上述雜質氣體自吸附劑脫附並作為排氣而排出;及升壓步驟,其使內部壓力上升;為了實行自處於上述吸附步驟後且上述脫附步驟前之狀態之上述吸附塔之任一者吹送內部氣體之第1氣體吹送步驟,同時實行將該所吹送之內部氣體導入至處於上述脫附步驟後且上述升壓步驟前之狀態之上述吸附塔之另外任一者中之第1氣體導入步驟,而以處於上述第1氣體吹送步驟之上述吸附塔之任一者之內部與處於上述第1氣體導入步驟之上述吸附塔之另外任一者之內 部相通之方式,利用上述控制裝置控制上述開關閥各者,為了實行自處於上述第1氣體吹送步驟後且上述脫附步驟前之狀態之上述吸附塔之任一者吹送內部氣體之第2氣體吹送步驟,同時實行將該所吹送之內部氣體導入至處於上述脫附步驟後且上述第1氣體導入步驟前之狀態之上述吸附塔之另外任一者中之第2氣體導入步驟,而以處於上述第2氣體吹送步驟之上述吸附塔之任一者之內部與處於上述第2氣體導入步驟之上述吸附塔之另外任一者之內部相通之方式,利用上述控制裝置控制上述開關閥各者,並且該氦氣之純化系統具備將處於上述脫附步驟之上述吸附塔之內部減壓至未達大氣壓之真空泵。 A helium purification system is provided with a pressure swing adsorption device having a plurality of adsorption towers, and In each of the adsorption towers, an adsorbent that adsorbs impurity gas in preference to helium gas is stored, and the pressure swing adsorption device includes a raw material gas introduction flow path for introducing the raw material helium gas to each of the adsorption towers ; Purified gas flow path, which is used to discharge purified helium gas from each of the above adsorption towers; Exhaust flow path, which is used to discharge exhaust gas from each of the above adsorption towers; Communication flow path, which is used to make the above adsorption towers Either one communicates with the other; the raw material gas introduction path on-off valve, which individually switches between each of the adsorption towers and the raw material gas introduction flow path; the purified gas path on-off valve, which connects the adsorption tower Each is individually opened and closed between the purified gas flow path; an exhaust path on-off valve that individually opens and closes each of the adsorption towers and the exhaust flow path; and a communication path on-off valve that controls the adsorption Each of the towers is individually opened and closed between the above-mentioned communication channels; each of the above-mentioned on-off valves is set as an automatic valve having an on-off actuator in such a way that the on-off operation can be performed individually, and is connected to the control device, In each of the adsorption towers, each of the on-off valves is controlled by the control device to sequentially perform the following steps: an adsorption step that causes the impurity gas contained in the introduced raw material helium gas to be adsorbed to the adsorption under pressure Agent, and discharge the purified helium gas that is not adsorbed on the adsorbent; the desorption step, which desorbs the impurity gas from the adsorbent and discharges it as exhaust; and the boosting step, which raises the internal pressure; The first gas blowing step of blowing the internal gas in any of the adsorption towers in the state after the adsorption step and before the desorption step, and simultaneously introducing the blown internal gas after the desorption step and the above The first gas introduction step of any one of the other adsorption towers in the state before the boosting step, and the inside of any one of the adsorption towers in the first gas blowing step and the first gas introduction step Within any of the above adsorption towers In order to communicate with each other, each of the on-off valves is controlled by the control device, in order to perform the second gas blowing of the internal gas from any one of the adsorption towers in the state after the first gas blowing step and before the desorption step In the blowing step, the second gas introduction step of any one of the other of the adsorption towers in the state after the desorption step and before the first gas introduction step is carried out while introducing the blown internal gas is carried out Each of the on-off valves is controlled by the control device so that the inside of any of the adsorption towers in the second gas blowing step communicates with the inside of any of the adsorption towers in the second gas introduction step, Moreover, the helium purification system is equipped with a vacuum pump that depressurizes the inside of the adsorption tower in the desorption step to subatmospheric pressure. 如請求項10之氦氣之純化系統,其具備調節於上述連通流路中流動之氣體流量之流量控制閥,上述流量控制閥被設為以可進行流量調節動作之方式具有流量調節用致動器之自動閥,並且與上述控制裝置連接,且具備檢測上述原料氦氣之氦濃度並且與上述控制裝置連接之感測器,上述第1氣體吹送步驟及上述第1氣體導入步驟之預先決定之一定之實行時間被記憶於上述控制裝置中,自處於上述第1氣體吹送步驟之上述吸附塔被吹送並導入至處於上述第1氣體導入步驟之上述吸附塔中之氣體於上述連通流路中之流量、與上述原料氦氣之氦濃度之間的預先決定之對應關係被記憶於上述控制裝置中,為了僅以由上述控制裝置所記憶之上述實行時間實行上述第1氣體吹送步驟及上述第1氣體導入步驟而控制上述開關閥,並且基於上述對應關係利用上述流量控制閥變更上述連通流路之開 度,以使自處於上述第1氣體吹送步驟之上述吸附塔被吹送並導入至處於上述第1氣體導入步驟之上述吸附塔中之氣體量增加至由上述感測器所檢測到之氦濃度般之高程度。 The helium purification system according to claim 10, which includes a flow control valve that adjusts the flow rate of the gas flowing in the communication flow path, and the flow control valve is set to have an actuator for flow adjustment in such a manner that the flow adjustment operation can be performed The automatic valve of the device is connected to the control device and includes a sensor that detects the helium concentration of the raw material helium gas and is connected to the control device. The first gas blowing step and the first gas introduction step are predetermined A certain execution time is memorized in the control device, the gas from the adsorption tower in the first gas blowing step is blown and introduced into the gas in the adsorption tower in the first gas introducing step in the communication flow path The predetermined correspondence between the flow rate and the helium concentration of the raw material helium gas is memorized in the control device, so that the first gas blowing step and the first gas injection step are performed only at the execution time memorized by the control device The gas introduction step controls the on-off valve, and changes the opening of the communication flow path using the flow control valve based on the corresponding relationship Degree so that the amount of gas from the adsorption tower in the first gas blowing step is blown and introduced into the adsorption tower in the first gas introduction step to the concentration of helium detected by the sensor To a high degree. 如請求項10之氦氣之純化系統,其具備檢測上述原料氦氣之氦濃度並且與上述控制裝置連接之感測器,上述第1氣體吹送步驟及上述第1氣體導入步驟之實行時間與上述原料氦氣中之氦濃度之間的預先決定之對應關係被記憶於上述控制裝置中,利用上述控制裝置基於上述對應關係變更上述第1氣體吹送步驟及上述第1氣體導入步驟之實行時間,以使自處於上述第1氣體吹送步驟之上述吸附塔被吹送並導入至處於上述第1氣體導入步驟之上述吸附塔中之氣體量增加至由上述感測器所檢測到之氦濃度般之高程度。 The helium purification system according to claim 10, which includes a sensor that detects the helium concentration of the raw material helium gas and is connected to the control device, the execution time of the first gas blowing step and the first gas introduction step, and the above The predetermined correspondence relationship between the helium concentrations in the raw material helium gas is stored in the control device, and the execution time of the first gas blowing step and the first gas introduction step is changed based on the correspondence relationship by the control device to Increase the amount of gas blown from the adsorption tower in the first gas blowing step and introduced into the adsorption tower in the first gas introduction step to a level as high as the helium concentration detected by the sensor . 如請求項10之氦氣之純化系統,其利用上述控制裝置控制上述開關閥各者,以於處於上述第1氣體吹送步驟後且上述第2氣體吹送步驟前之狀態之上述吸附塔之任一者中,實行減少內部壓力之減壓步驟,同時於處於上述脫附步驟後且上述第2氣體導入步驟前之狀態之上述吸附塔之另外任一者中,實行於導入處於上述減壓步驟之上述吸附塔之內部氣體後作為排氣而排出之洗淨步驟,且具備調節於上述連通流路中流動之氣體流量之流量控制閥,上述流量控制閥被設為以可進行流量調節動作之方式具有流量調節用致動器之自動閥,並且與上述控制裝置連接,且具備檢測上述原料氦氣之氦濃度並且與上述控制裝置連接之感測器,上述洗淨步驟之預先決定之一定之實行時間被記憶於上述控 制裝置中,自處於上述減壓步驟之上述吸附塔被吹送並導入至處於上述洗淨步驟之上述吸附塔中之氣體於上述連通流路中之流量、與上述原料氦氣之氦濃度之間的預先決定之對應關係被記憶於上述控制裝置中,為了僅以由上述控制裝置所記憶之上述實行時間實行上述洗淨步驟而控制上述開關閥,並且基於上述對應關係利用上述流量控制閥變更上述連通流路之開度,以使自處於上述減壓步驟之上述吸附塔被吹送並導入至處於上述洗淨步驟之上述吸附塔中之氣體量減少至由上述感測器所檢測到之氦濃度般之高程度。 The helium purification system of claim 10, wherein each of the on-off valves is controlled by the control device to be in any of the adsorption towers in a state after the first gas blowing step and before the second gas blowing step Among them, the decompression step for reducing the internal pressure is performed, and at the same time, in any one of the adsorption towers in the state after the desorption step and before the second gas introduction step, the decompression step is carried out A cleaning step of exhausting the internal gas of the adsorption tower as exhaust gas, and including a flow control valve that adjusts the flow rate of the gas flowing in the communication flow path, and the flow control valve is configured to enable a flow adjustment operation An automatic valve with an actuator for flow adjustment, connected to the control device, and equipped with a sensor that detects the helium concentration of the raw material helium gas and is connected to the control device, the predetermined step of the cleaning step is carried out in advance Time is memorized in the above control In the manufacturing apparatus, the flow rate of the gas in the communication flow path from the adsorption tower in the depressurization step is introduced into the adsorption tower in the washing step, and the helium concentration of the raw material helium gas The predetermined correspondence relationship of is stored in the control device, in order to control the on-off valve to execute the washing step only at the execution time memorized by the control device, and the flow control valve is used to change the above based on the correspondence relationship. The opening degree of the communication flow path is such that the amount of gas that is blown from the adsorption tower in the depressurization step and introduced into the adsorption tower in the cleaning step is reduced to the helium concentration detected by the sensor So high. 如請求項10之氦氣之純化系統,其利用上述控制裝置控制上述開關閥各者,以於處於上述第1氣體吹送步驟後且上述第2氣體吹送步驟前之狀態之上述吸附塔之任一者中,實行減少內部壓力之減壓步驟,同時於處於上述脫附步驟後且上述第2氣體導入步驟前之狀態之上述吸附塔之另外任一者中,實行於導入處於上述減壓步驟之上述吸附塔之內部氣體後作為排氣而排出之洗淨步驟,且具備檢測上述原料氦氣之氦濃度並且與上述控制裝置連接之感測器,上述洗淨步驟之實行時間與上述原料氦氣中之氦濃度之間的預先決定之對應關係被記憶於上述控制裝置中,利用上述控制裝置基於上述對應關係變更上述洗淨步驟之實行時間,以使自處於上述減壓步驟之上述吸附塔被吹送並導入至處於上述洗淨步驟之上述吸附塔中之氣體量減少至由上述感測器所檢測到之氦濃度般之高程度。 The helium purification system of claim 10, wherein each of the on-off valves is controlled by the control device to be in any of the adsorption towers in a state after the first gas blowing step and before the second gas blowing step Among them, the decompression step for reducing the internal pressure is performed, and at the same time, in any one of the adsorption towers in the state after the desorption step and before the second gas introduction step, the decompression step is carried out A cleaning step of discharging the internal gas of the adsorption tower as exhaust gas, and having a sensor that detects the helium concentration of the raw material helium gas and is connected to the control device, and the execution time of the cleaning step and the raw material helium gas The predetermined correspondence between the helium concentrations in is stored in the control device, and the control device is used to change the execution time of the washing step based on the correspondence so that the adsorption tower that is in the decompression step is subjected to The amount of gas blown and introduced into the adsorption tower in the washing step is reduced to a level as high as the helium concentration detected by the sensor. 如請求項10至12中任一項之氦氣之純化系統,其利用上述控制裝置控制上述開關閥各者,以於處於上述第1氣體吹送步驟後且上述第2氣體吹送步驟前之狀態之上述吸附塔之任一者中,實行減少內部壓力之減壓步驟,同時於處於上述脫附步驟後且上述第2氣體導入步驟前之狀態之上述吸附塔之另外任一者中,實行於導入處於上述減壓步驟之上述吸附塔之內部氣體後作為排氣而排出之洗淨步驟。 The helium purification system according to any one of claims 10 to 12, which controls each of the on-off valves using the control device to be in a state after the first gas blowing step and before the second gas blowing step In any of the adsorption towers, a decompression step for reducing the internal pressure is performed, and in any of the adsorption towers in a state after the desorption step and before the second gas introduction step, the introduction is performed The washing step in which the internal gas of the adsorption tower in the depressurization step is discharged as exhaust gas. 如請求項10至14中任一項之氦氣之純化系統,其具備用以將上述排氣流路與上述原料氣體導入流路連接之再利用流路。 The helium purification system according to any one of claims 10 to 14 includes a reuse flow path for connecting the exhaust gas flow path and the raw material gas introduction flow path. 如請求項15之氦氣之純化系統,其具備用以將上述排氣流路與上述原料氣體導入流路連接之再利用流路。 The helium purification system according to claim 15 is provided with a reuse flow path for connecting the exhaust gas flow path and the raw material gas introduction flow path.
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