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TWI675864B - 陽離子導電聚合物 - Google Patents

陽離子導電聚合物 Download PDF

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TWI675864B
TWI675864B TW107121969A TW107121969A TWI675864B TW I675864 B TWI675864 B TW I675864B TW 107121969 A TW107121969 A TW 107121969A TW 107121969 A TW107121969 A TW 107121969A TW I675864 B TWI675864 B TW I675864B
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conductive polymer
polymer
cationic conductive
cationic
equal
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TW202000729A (zh
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黃文堯
Wen-Yao Huang
李旭峰
Hsu-Feng Lee
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國立中山大學
National Sun Yat-Sen University
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Priority to TW107121969A priority Critical patent/TWI675864B/zh
Priority to US16/023,273 priority patent/US10738158B2/en
Priority to CN201811014324.5A priority patent/CN110643035A/zh
Priority to JP2018174263A priority patent/JP6705872B2/ja
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Abstract

一種陽離子導電聚合物，具有複數個重複單元，各該重複單元具有下列通式之結構

Description

陽離子導電聚合物
本發明關於一種聚合物，特別是一種具有良好的物化穩定性、親水性及導電性的陽離子導電聚合物。
燃料電池是利用電化學反應直接將燃料中的化學能轉換為電能，質子交換膜燃料電池(proton exchange member fuel cell, PEMFC)為常見的燃料電池系統之一，質子交換膜燃料電池以氫氣作為燃料，反應後僅會生成水及熱能，不會對環境造成任何污染。
於質子交換膜燃料電池系統中，通入陽極的氫氣經氣體擴散層擴散至觸媒層，並於觸媒層的鉑(Pt)催化下生成質子(H +)及電子(e -)，電子經外部電路傳遞至陰極，而質子經由質子交換膜傳遞至陰極端觸媒層，並與通入陰極的氧氣及傳遞至陰極的電子進行還原反應而生成水，其中陽極反應式為H 2à2H ++2e -，陰極反應式為4H ++4e -+O 2à2H 2O，總反應式為2H 2+O 2à2H 2O。
質子交換膜為質子交換膜燃料電池系統中最重要的元件，會直接影響燃料電池的性能及壽命，市面上常見的質子交換膜以杜邦公司所生產的鈉菲薄膜(Nafion)為主，其屬於全氟磺酸化高分子(perfluorosulfonic acid ionomer, PFSA)，雖然Nafion具有高質子導電度及使用壽命達60000小時以上等優點，但具有下列缺點：於高溫低濕環境下，因無法保留水分子而造成質子導電度下降；因玻璃轉移溫度(Tg)過低，無法於高溫環境中使用；價格昂貴；具污染性。因此目前質子交換膜的研究開發多以朝向替代Nafion的方向發展。
台灣發明專利I527842揭露一種含氟磺酸化聚芳香醚高分子，由具有1至6個氟基(-F)或三氟甲基(-CF 3)的含氟單體及多苯環單體經親核性聚縮合反應所形成，然而含氟單體會影響親水性及導電性，使得上述含氟磺酸化聚芳香醚高分子不利於應用於燃料電池的質子交換膜。
本發明之主要目的在於提供一種陽離子導電聚合物，該陽離子導電聚合物具有良好的物化穩定性、親水性及導電性，因此經塗佈形成的薄膜可作為質子交換膜，應用於燃料電池系統中。
本發明之一種陽離子導電聚合物，其包含有複數個重複單元，各該重複單元具有下列通式之結構 ，其中X選自於 、 或 ，Y選自於 、 、 、 或 ，i為大於1或等於1之整數，j為大於1或等於1之整數。
本發明揭露一種陽離子導電聚合物，其具有複數個重複單元，各該重複單元具有下列通式之結構 ，其中X選自於 、 或 ，Y選自於 、 、 、 或 ，SO 3H為親水性磺酸根基團，i為大於1或等於1之整數，j為大於1或等於1之整數，較佳地，i為1至10之整數，j為1至10之整數，更佳地，i及j的總和為2至4之整數，即各該重複單元具有2至4個磺酸根基團。
請參閱下列結構式，其為本發明之實施例 …(P1) …(P2) …(P3)，其中P1聚合物、P2聚合物及P3聚合物為未磺酸化之陽離子導電聚合物，n為大於2或等於2之整數，在本實施例中，二氟單體 與不同的二醇單體 、 及 經親核性聚縮合反應後即可分別獲得P1聚合物、P2聚合物及P3聚合物。
請參閱下列表1，以P2聚合物為例，P2聚合物根據分子量大小可區分為高分子量聚合物P2-H、中分子量聚合物P2-M及低分子量聚合物P2-L，下列表1列出不同分子量P2聚合物之重量平均分子量(Mw)、數量平均分子量(Mn)及聚合物分散性指數(polymer dispersity index, PDI, Mw/Mn)。 表1
Mw Mn PDI
P2-H 180,000 80,000 2.2
P2-L 100,000 65,000 1.5
P2-M 65,000 32,000 1.8
P1、P2及P3聚合物經磺酸化改質後可獲得SP1、SP2及SP3聚合物 …(SP1) …(SP2) …(SP3)，其中n為大於2或等於2之整數，R為氫(H)或磺酸根基團(-SO 3H)，較佳地，SP1、SP2及SP3聚合物中的每一重複單元具有2至4個磺酸根基團。
請參閱第1圖，以SP2聚合物為例，二氟單體a及二醇單體b經親核性聚縮合反應生成P2聚合物，將P2聚合物溶於無水二氯甲烷(dichloromethane)，並於氮氣環境下滴入氯磺酸(chlorosulfonic acid)進行磺酸化改質，反應完成後將產物倒入水中過濾並清洗至中性，最後真空乾燥產物即獲得SP2聚合物。
請參閱下列表2，其為SP1、SP2及SP3聚合物之試驗數據。 表2
氧化穩定性(%) 尺寸穩定性(%) 質子導電度(mS/cm)
SP1 99 20 172
SP2 98 26 260
SP3 95 28 143
氧化穩定性是將薄膜樣品置於80°C芬頓試劑(Fenton’ reagent, 2ppm FeSO 4in 3% H 2O 2solution)中1小時，根據處理前後的樣品重量差異計算樣品殘餘重量，尺寸穩定性是將樣品薄膜置於80°C水中24小時後，根據處理前後的薄膜尺寸差異(長度、寬度及厚度)計算尺寸穩定性，而質子導電度是於高溫高濕環境下(80°C，95%相對濕度)進行導電度測試，由試驗結果可知，SP1、SP2及SP3聚合物具有良好的氧化穩定性、尺寸穩定性及質子導電度。
請參閱下列表3，其為不同分子量的SP2-H、SP2-M及SP2-L聚合物與杜邦鈉菲薄膜Nafion 211(DuPont TMNafion® PFSA NR-211)的性質對照表。 表3
SP2-H SP2-M SP2-L Nafion 211
熱穩定性 -熱裂解溫度(°C) 265 266 252 -
氧化穩定性 -殘餘重量(%) 99 95 93 99
尺寸穩定性 -薄膜長度變化率(%) -薄膜厚度變化率(%) 15 17 20 35 41 53 15 20
吸水率(%) 84 114 146 30
離子交換能力(mmol/g) 3.27 3.48 3.30 0.95
質子導電度(mS/cm) 207 229 242 115
熱裂解溫度(T d5%)為樣品重量損失5%時的溫度，SP2聚合物的T d5%介於252-266°C之間，具有良好的熱穩定性。氧化穩定性測試是將薄膜樣品置於80°C芬頓試劑(Fenton’ reagent, 2ppm FeSO 4in 3% H 2O 2solution)中1小時，根據處理前後的樣品重量差異計算樣品殘餘重量，SP2聚合物經氧化處理後仍保有90%以上的殘餘重量，具有良好的氧化穩定性。尺寸穩定性及吸水率測試是將薄膜樣品置於80°C水中24小時，根據浸泡前後的薄膜長度及厚度差異計算其變化率，並根據浸泡前後的薄膜重量差異計算其吸水率，SP2聚合物的吸水率介於84-146%之間，明顯高於Nafion，但尺寸變化率並無隨著吸水率明顯提高，因此相較於Nafion 211，SP2聚合物於高溫水中可減少澎潤現象。離子交換能力是以酸鹼滴定法進行測試，其可用以判斷樣品的磺酸化程度，而質子導電度會隨著磺酸化程度增加而上升，根據測試結果，SP2聚合物的離子交換能力及質子導電度均高於Nafion 211，符合預期。
根據上述試驗結果可知，本發明之該陽離子導電聚合物具有良好的熱穩定性、氧化穩定性、尺寸穩定性、離子交換能力及質子導電度，因此塗佈形成的薄膜可作為質子交換膜應用於燃料電池系統中。
由於本發明之該陽離子導電聚合物結構中的三氟甲基(CF 3)會使苯環去活化，因此具有三氟甲基的苯環不會被磺酸化改質，可作為疏水端，而其他經由磺酸化改質的苯環可作為親水端，結構中的親疏水端可使該陽離子導電聚合物形成較好的微相分離型態。此外，多苯環結構及三氟甲基可提高聚合物溶解度，以利於形成具有長鏈結構的高分子量聚合物，使得該陽離子導電聚合物因高度的分子鏈纏繞而形成良好的物理交聯點，塗佈形成的薄膜不易澎潤且具有高度自由體積，因此本發明之該陽離子導電聚合物具有良好的機械性質及尺寸穩定性。
本發明之保護範圍當視後附之申請專利範圍所界定者為準，任何熟知此項技藝者，在不脫離本發明之精神和範圍內所作之任何變化與修改，均屬於本發明之保護範圍。
無
第1圖：依據本發明之一實施例，一種陽離子導電聚合物之合成流程圖。

Claims (7)

  1. 一種陽離子導電聚合物，其包含：複數個重複單元，各該重複單元具有下列通式之結構
    Figure TWI675864B_C0001
    ，其中X選自於
    Figure TWI675864B_C0002
    、
    Figure TWI675864B_C0003
    或
    Figure TWI675864B_C0004
    ，Y選自於
    Figure TWI675864B_C0005
    、
    Figure TWI675864B_C0006
    、
    Figure TWI675864B_C0007
    、
    Figure TWI675864B_C0008
    或
    Figure TWI675864B_C0009
    ，i為大於1或等於1之整數，j為大於1或等於1之整數。
  2. 如申請專利範圍第1項所述之陽離子導電聚合物，其中i為1至10之整數，j為1至10之整數。
  3. 如申請專利範圍第1項所述之陽離子導電聚合物，其中各該重複單元具有2至4個磺酸根基團(-SO 3H)。
  4. 如申請專利範圍第1項所述之陽離子導電聚合物，其中該陽離子導電聚合物具有下列式(SP1)之結構
    Figure TWI675864B_C0010
    …(SP1)，R為氫(H)或磺酸根基團(-SO 3H)，n為大於2或等於2之整數。
  5. 如申請專利範圍第1項所述之陽離子導電聚合物，其中該陽離子導電聚合物具有下列式(SP2)之結構
    Figure TWI675864B_C0011
    …(SP2)，R為氫(H)或磺酸根基團(-SO 3H)，n為大於2或等於2之整數。
  6. 如申請專利範圍第1項所述之陽離子導電聚合物，其中該陽離子導電聚合物具有下列式(SP3)之結構
    Figure TWI675864B_C0012
    …(SP3)，R為氫(H)或磺酸根基團(-SO 3H)，n為大於2或等於2之整數。
  7. 如申請專利範圍第4或5或6項所述之陽離子導電聚合物，其中該陽子離子導電聚合物之每一重複單元具有2至4個磺酸根基團(-SO 3H)。
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