TWI674637B - Fabrication facility and method for fault detection in fabrication facility - Google Patents

Abstract

Some embodiments of the present disclosure provide an error measurement method in a manufacturing facility. The method includes moving a wafer into a processing tank, and removing the wafer from the processing tank after a predetermined time. The above method further includes transmitting a sound wave energy to the processing tank, and generating a measurement sound wave data according to the sound wave energy returned from the processing tank. The above method also includes comparing the measured sound wave data with a desired sound wave data, and triggering an alert when the measured sound wave data is inconsistent with the expected sound wave data.

Description

Manufacturing facility and method of error measurement in manufacturing facility

Embodiments of the present invention relate to a semiconductor technology, and more particularly, to a semiconductor manufacturing facility and an error measurement method for a manufacturing system thereof.

Semiconductor devices are used in a variety of electronic applications, such as personal computers, mobile phones, digital cameras, and other electronic devices. Semiconductor devices are usually manufactured by sequentially depositing insulating or dielectric layer materials, conductive layer materials, and semiconductor layer materials on a semiconductor substrate, and then patterning various material layers formed using a lithography process to form circuit components and parts. On the semiconductor substrate. Technical advances in the materials and design of integrated circuits have developed integrated circuits for multiple generations. Compared to the previous generation, each generation has smaller and more complex circuits. However, these developments have increased the complexity of processing and manufacturing integrated circuits. In order to achieve these developments, similar developments in the manufacture and production of integrated circuits are also necessary.

In the manufacture of semiconductor devices, a variety of manufacturing tools are used in order to manufacture integrated circuits on a semiconductor wafer. For example, semiconductor devices are formed on semiconductor wafers through a variety of wet chemical processing operations. The wet chemical process may include a cleaning process or an etching process. In the above wet chemical process, the chemical solution and crystal in the chemical solution tank The material on the circle that you want to remove or etch reacts.

Although several improvements to the methods of wet chemical processing have been proposed, they are not completely satisfactory in all respects. Therefore, it is desirable to provide an improved solution for wet chemical processing to reduce or avoid wafer scrap due to errors in the processing tank.

Some embodiments of the present disclosure provide an error measurement method in a manufacturing facility. The method includes moving a wafer into a processing tank, and removing the wafer from the processing tank after a predetermined time. The above method further includes transmitting a sound wave energy to the processing tank, and generating a measurement sound wave data according to the sound wave energy returned from the processing tank. The above method also includes comparing the measured sound wave data with a desired sound wave data, and triggering an alert when the measured sound wave data is inconsistent with the expected sound wave data.

Some embodiments of the present disclosure provide a manufacturing facility. The manufacturing facility includes a processing tank configured for loading a chemical solution. The manufacturing facility further includes a measurement tool. The measurement tool is configured to emit a sound wave energy to the processing tank and generate a measurement sound wave data according to the sound wave energy returned from the processing tank. The manufacturing facility also includes a fault measurement and classification system. The error measurement and classification system is configured to compare the measured sound wave data with a desired sound wave data, and trigger an alarm when the measured sound wave data is inconsistent with the expected sound wave data.

1‧‧‧ manufacturing facilities

5‧‧‧ wafer

7‧‧‧ chemical solution

20‧‧‧Internet

30‧‧‧Manufacturing System

31‧‧‧Processing trough

311‧‧‧ bottom wall

312‧‧‧ sidewall

3121‧‧‧outer surface

3122‧‧‧Inner surface

32‧‧‧ Shelves

321‧‧‧ incision

33‧‧‧Transfer module

34‧‧‧ base

35‧‧‧arm

351‧‧‧ Upper Section

352‧‧‧ lower section

353‧‧‧ obtuse angle

40, 40b‧‧‧ measurement tools

41, 41a, 41b ‧‧‧ sound wave transmitter

42, 42a, 42b‧‧‧ Sonic Receiver

43‧‧‧Signal Processor

50‧‧‧ Error measurement and classification system

60‧‧‧control system

70‧‧‧Database

80‧‧‧ other entities

S10‧‧‧Method

S11-S15‧‧‧ Operation

Figure 1 shows a block diagram of a manufacturing facility according to one of some embodiments.

Figure 2 shows a schematic view of some elements of a manufacturing facility according to one of some embodiments.

Figure 3 shows a schematic view of some elements of a manufacturing facility according to one of some embodiments.

Figure 4 shows a schematic view of some elements of a manufacturing facility according to one of some embodiments.

FIG. 5 shows a simplified flowchart of a method of performing error measurement in a manufacturing facility according to some embodiments.

FIG. 6A shows a schematic diagram of a process performed in a manufacturing facility according to some embodiments, in which a wafer is moved over a processing tank by a transfer assembly.

FIG. 6B is a schematic diagram illustrating a processing procedure performed in a manufacturing facility according to some embodiments, in which a wafer is moved into a processing tank by a transfer assembly.

FIG. 6C is a schematic diagram illustrating a processing procedure performed in a manufacturing facility according to some embodiments, in which a wafer is placed in a processing tank for processing and a transfer component is parked above the processing tank.

FIG. 6D shows a schematic diagram of a process performed in a manufacturing facility according to some embodiments, in which a wafer is moved out of a processing tank by a transfer module.

FIG. 6E is a schematic diagram illustrating a processing procedure performed in a manufacturing facility according to some embodiments, in which a wafer is removed from a processing tank by a transfer module and moved over the processing tank.

The embodiments or examples disclosed below are used to illustrate or complete many different technical features of the present invention, and the specific examples of the described elements and configuration are used to simplify the description of the present invention, so that the disclosure can be more thorough and complete, The scope of this disclosure is fully conveyed to those skilled in the art. Of course, this disclosure can also be implemented in many different forms and is not limited to the embodiments described below.

The space-related terms used in the following, such as "below", "below", "lower", "above", "higher" and similar terms, are used to facilitate the description of illustrations The relationship between one element or feature and another element or feature. In addition to the orientations shown in the drawings, these spatially related terms are also intended to encompass different orientations of the device in use or operation. For example, the device may be turned to different orientations (rotated 90 degrees or other orientations), and the spatially related terms used herein may be interpreted the same way. In addition, if a first feature is formed on or above a second feature in the embodiment, it means that it may include the case where the first feature is in direct contact with the second feature, or it may include additional features. It is formed between the first feature and the second feature, so that the first feature and the second feature are not in direct contact.

The same component numbers and / or words may be repeatedly used in the following different embodiments. These repetitions are for the purpose of simplification and clarity, and are not intended to limit the specific relationship between the different embodiments and / or structures discussed. In addition, in the drawings, the shape or thickness of the structure may be enlarged to simplify or facilitate labeling. It must be understood that elements not specifically illustrated or described may exist in various forms well known to those skilled in the art.

Figure 1 shows a block diagram of a manufacturing facility 1 according to one of some embodiments of the invention. The manufacturing facility 1 performs an integrated circuit manufacturing process to produce an integrated circuit device. For example, the manufacturing facility 1 may perform multiple semiconductor manufacturing processes to add semiconductor wafers. For the sake of clarity, manufacturing facility 1 in Figure 1 is simplified. So as to better understand the concept of the present invention. Other features may be added to the manufacturing facility 1, and in other embodiments of the manufacturing facility 1, certain features described below may also be replaced or removed.

The manufacturing facility 1 includes a network 20 for enabling various entities (such as a manufacturing system 30, a measurement tool 40, a fault detection and classification (FDC) system 50, a control system 60, a The database 70, and other entities 80) can communicate with each other. In some embodiments, the manufacturing facility 1 may include more than one of the various entities described above, and further include other entities not shown in the embodiments. The network 20 may be a single network or a plurality of different networks, such as an intranet, the Internet, other networks, or a combination thereof. The network 20 includes a wired communication channel, a wireless communication channel, or a combination of the two.

2 and 3 are schematic diagrams of a manufacturing system 30 according to some embodiments. The manufacturing system 30 is configured to perform wet chemical processing on one or more wafers 5 (only one wafer is shown in FIG. 2).

In some embodiments, the manufacturing system 30 includes a processing tank 31. When the wafer 5 is subjected to wet chemical processing, the wafer 5 is placed in the processing tank 31 to react with the chemical solution 7 stored in the processing tank 31. In some embodiments, the processing groove 31 includes a bottom wall 311 and a side wall 312 vertically connected to the bottom wall 311. The bottom wall 311 and the side wall 312 are formed in a fluid-tight space. The bottom wall 311 and the side wall 312 may be made of a corrosion-resistant material, such as stainless steel or a steel plate panel coated with a corrosion-resistant material, such as Teflon.

One or more solution distribution elements or spraying elements (not shown) may be placed inside the processing tank 31 to allow the chemical solution 7 to enter the processing tank 31. Various heating elements or techniques can be utilized to heat the chemical solution 7 stored in the processing tank 31. In one embodiment, the chemical solution 7 that can be stored in the processing tank 31 includes a reactive wet chemical for etching, a rinse agent, a cleaner, or deionized water. In a specific embodiment, the chemical solution 7 is a liquid including thermal phosphoric acid (H ₃ PO ₄ ). The hot phosphoric acid in the processing tank 31 can be maintained at a temperature of about 150 ° C. Alternatively, the hot phosphoric acid in the processing tank 31 may be maintained at a temperature of about 70 ° C to about 160 ° C or other suitable temperature. It should be understood that the chemical solution stored in the processing tank 31 is not limited to the above embodiment. Other suitable chemical solutions can also be stored in the processing tank 31 to perform wet chemical processing with the wafer 5. In some embodiments, the manufacturing system 30 further includes a receiving frame 32 disposed in the processing tank 31. The receiving rack 32 may include a plurality of slots 321. Each notch 321 is configured to receive a wafer 5 and limit the position of the wafer 5 when the wafer 5 is stored in the processing tank 31.

In some embodiments, the manufacturing system 30 further includes a transfer component 33. The transfer assembly 33 is configured to move the wafer 5 into the processing tank 31 and subsequently move it out of the processing tank 31. In an example, the transfer module 33 transfers the wafer 5 into the processing tank 31 along a vertical direction D1, and removes the wafer 5 from the processing tank 31 along a vertical direction D1 after a predetermined time. The operation of the transmission unit 33 can be performed according to a control signal from the control system 60.

In some embodiments, the transmission assembly 33 includes a base 34 and a plurality of pairs of arms 35 (only one pair of arms 35 is shown in FIG. 2). Each pair of arms 35 is disposed on the base 34 in such a manner as to be movable in a horizontal direction D2 relative to each other to fix and release the wafer 5. In some embodiments, each arm 35 has an upper section 351 and a lower section 352. Upper section 351 is perpendicular to The direction D1 extends downward and outward from the base 34. The lower section 352 extends downward and inward from the upper section with respect to the vertical direction D1. An obtuse angle 353 is formed between the upper section 351 and the lower section 352 for holding the wafer 5. The angle of the obtuse angle 353 between the upper section 351 and the lower section 352 can be adjusted according to the size of the wafer 5 to be transferred by the transfer module 33.

One or more measurement tools 40 are connected to the manufacturing system 30 to measure real-time conditions in the manufacturing system 30. The real-time conditions in the manufacturing system 30 measured by the measuring tool 40 include whether the wafer 5 or a fragment of the wafer 5 exists in the processing tank 31 or the solution quality of the processing solution stored in the processing tank 31.

In some embodiments, as shown in FIG. 2, the measurement tool 40 includes a sonic transmitter 41 and a sonic transmitter 42. The sonic transmitter 41 and the sonic receiver 42 are arranged next to each other, and the sonic transmitter 41 and the sonic receiver 42 are connected to the outer surface 3121 of the side wall 312 of the processing tank 31 (that is, opposite to the inner surface 3122 of the processing solution 7) on. The sonic transmitter 41 and the sonic receiver 42 may be disposed on the side wall 312 (the side wall 312 in the X-axis direction) perpendicular to the processing surface of the wafer 5.

In addition, as shown in FIG. 3, the measurement tool 40 further includes a sonic transmitter 41 a and a sonic transmitter 42 a. The sonic transmitter 41 a and the sonic receiver 42 a are disposed next to each other, and the sonic transmitter 41 a and the sonic receiver 42 a are connected to the outer surface 3121 of the side wall 312 of the processing tank 31. The sonic transmitter 41 a and the sonic receiver 42 a may be disposed above the side wall 312 (the side wall 312 in the Y-axis direction) parallel to the processing surface of the wafer 5.

During the measurement, the sonic energy emitted by the sonic transmitters 41 and 41a penetrates the side wall 312 of the processing tank 31 and is transmitted to the chemical solution. The receivers 42 and 42a receive sound wave energy penetrating the side wall 312 of the processing groove 31 and generate a measurement signal. The measurement tool 40 can obtain more information about the processing tank 31 and the processing solution 7 stored in the processing tank 31 by transmitting sonic energy toward the processing solution 7 at multiple locations and receiving the sonic energy returned from the processing solution 7.

In another example, as shown in FIG. 4, the measurement tool 40 b includes two sonic transmitters 41 and 41 b and two sonic receivers 42 and 42 b. The sonic transmitter 41 and the sonic receiver 42 are disposed next to each other, and the sonic transmitter 41 and the sonic receiver 42 are connected to the processing groove 31 above the sidewall 312 perpendicular to the processing surface of the wafer 5. In addition, the acoustic wave transmitter 41b and the acoustic wave receiver 42b are disposed in close proximity, and the acoustic wave transmitter 41b and the acoustic wave receiver 42b are connected to the arm 35 of the transmission assembly 33. The measurement tool 40 can obtain more information about the processing tank 31 and the processing solution 7 stored in the processing tank 31 by transmitting sonic energy toward the processing solution 7 at multiple locations and receiving the sonic energy returned from the processing solution 7.

It should be understood that, although the acoustic wave transmitter and the acoustic wave receiver of the measurement tools 40 and 40b in the above embodiments are disposed next to each other, this disclosure is not limited thereto. In the other unillustrated embodiments, the sonic transmitter that emits sonic energy is separate from the sonic receiver that receives the sonic energy from the sonic transmitter and has penetrated the chemical solution 7. In one example, the sonic transmitter and the corresponding sonic transmitter are disposed on two opposite sides of the processing groove 31. The sonic energy from the sonic transmitter is received by the sonic wave after passing through the entire processing groove 31 along the long axis direction (such as the X axis in FIG. 2) or the horizontal axis direction (such as the Y axis in FIG. 2) of the processing groove 31. Device received. Alternatively, the acoustic wave transmitter and the corresponding acoustic wave transmitter may be configured in other suitable ways, as long as the acoustic wave receiver can receive the acoustic wave energy from the corresponding acoustic wave transmitter and having penetrated the chemical solution 7.

Referring to FIG. 2 again, in some embodiments, the measurement tool 40 further includes a signal processor 43. The signal processor 43 is electrically connected to the acoustic wave receiver 42 to receive the electronic signals generated by the acoustic wave receiver 42, and after processing, it is transmitted to the error measurement and classification system 50 for analysis. The signal processor 43 may be an image processor, and the electronic signal generated by the acoustic wave receiver 42 is converted into information about the three-dimensional map of the processing tank 31 through the image processor. And / or, the signal processor 43 may be a data processor, and the electronic signal generated from the sonic receiver 42 is converted into the information of the position of the wafer 5 through the data processor.

Referring again to FIG. 1 and with reference to FIG. 2, the error measurement and classification system 50 is configured to monitor the measurement from the measurement tool 40 before, during, or after the wafer 5 is transferred to the processing tank 31. The data is used to evaluate the conditions in the manufacturing system 30 to determine whether an abnormality or error has occurred. In an example, the measurement data transmitted by the measurement tool 40 includes measurement data of a three-dimensional map of the processing tank 31. When the measured data of the three-dimensional map of the processing tank 31 is different from the expected data of the three-dimensional map of the processing tank 31, a warning signal is issued, and / or the engineer or operator of the manufacturing system 30 is notified to identify and remedy the manufacturing system Any question in 30. The desired data of the three-dimensional map of the processing tank 31 can be determined by historical data stored in the database 70. These abnormalities may indicate that an error has occurred in the manufacturing system 30. For example, the wafer 5 is left in the processing groove 31 or a fragment of the wafer 5 is left in the processing groove 31.

In another example, the measurement data transmitted by the measurement tool 40 includes measurement data of the position of the wafer 5. When the measured data of the position of the wafer 5 is different from the expected data of the position of the wafer 5, an alarm is sent to the control system 60. The control system 60 moves the wafer 5 based on the measurement data including the position of the wafer 5 so that the crystal Circle 5 moves to the desired position.

The control system 60 may perform control actions in real time, wafer-to-wafer, batch-to-batch, or a combination thereof. In the described embodiment, the control system 60 performs control actions to control the operating conditions of the manufacturing system 30. For example, the control system 60 (in accordance with an alert from the error measurement and classification system 50) terminates the operation of the manufacturing system 30 to stop the processing performed by the manufacturing system 30. In other embodiments, the control system 60 performs control actions to exclude the chemical solution 7 stored in the processing tank 31 to perform a maintenance process. In other embodiments, the control system 60 performs a control action to move the wafer 5 to a desired position.

In other embodiments, the control system 60 performs control actions to modify processing recipes performed by the manufacturing system 30. For example, the control system 60 (based on in-line measurement data from the measurement tool 40) modifies predetermined process parameters (transport components, process parameters implemented by the manufacturing system 30, such as processing) for each wafer 5 Time, processing tank temperature, and other process parameters) to ensure that each wafer 5 in the manufacturing system 30 exhibits desired characteristics.

The database 70 may include a plurality of storage devices to provide information storage. The above information may include original data obtained directly from the measurement tool 40 and information from the manufacturing system 30. For example, information from the measurement tool 40 may be transmitted to the database 70 and stored in the database 70 for archiving. The data from the measurement tool 40 is stored in its original form (eg, as obtained from the measurement tool 40 or the manufacturing system 30), or the data from the measurement tool 40 is stored in a converted form (E.g. conversion from an analog signal to a digital signal). The database 70 stores data related to the manufacturing facility 1, in particular, information about the manufacturing system 30.

In the described embodiment, the database 70 stores data collected from the manufacturing system 30, the measurement tool 40, the error measurement and classification system 50, the control system 60, other entities 80, and combinations thereof. For example, the data stored in the database 70 may include data related to the characteristics of the wafer processed by the manufacturing system 30, data related to the process parameters implemented by the manufacturing system 30 to process the wafer, and related to the control system 60 and The error measurement and classification system 50 analyzes the above-mentioned wafer characteristics, process parameters, and / or the status of the manufacturing system 30, and other data related to the manufacturing facility 1. In one example, each of the manufacturing system 30, the measurement tool 40, the error measurement and classification system 50, the control system 60, and other entities 80 may have a corresponding database.

FIG. 5 shows a simplified flowchart of a method S10 for performing error measurement in a manufacturing facility 1 according to some embodiments. For illustration, the flowchart will be described with reference to FIGS. 6A to 6E. In some different embodiments, part of the operation procedure of the subsequent method may be changed or cancelled.

The method S10 includes operation S11 in which desired acoustic wave data on the processing tank 31 is collected. In some embodiments, the desired sonic data on the processing slot 31 may be a three-dimensional map (3-) of the processing slot 31 when various processing programs (for example, multiple processing programs shown in FIGS. 6A to 6E in the rear) are performed. dimesional map). Alternatively, the desired sonic data about the processing tank 31 may be desired data of the position of the wafer 5 when each processing procedure is performed.

The desired data of the three-dimensional map of the processing groove 31 may be on the wafer 5 Measurement is performed when not placed in the processing tank 31. For example, when the processing tank 31 is filled with the chemical solution 7 and the wafer 5 is not placed in the processing tank 31, the sonic transmitter 41 of the measuring tool 40 starts to emit sonic energy toward the chemical solution 7 in the processing tank 31, and The acoustic wave receiver 42 of the measurement tool 40 starts to receive the acoustic wave energy reflected or refracted from the chemical solution 7 in the processing tank 31. The measurement tool 40 can generate desired data of the three-dimensional map of the processing slot 31 through a signal processor 43 according to the sonic energy received by the sonic receiver 42. In some embodiments, the desired data of the three-dimensional map only displays images of the receiving rack 32 and other elements (for example, a heating element or a solution distribution element (not shown)) in the processing tank 31.

Alternatively, the desired data of the three-dimensional map of the processing tank 31 may be measured when the wafer 5 is placed in the processing tank 31. For example, when the processing tank 31 is filled with the chemical solution 7 and the wafer 5 is placed into the processing tank 31, the sonic transmitter 41 of the measuring tool 40 starts to emit sonic energy toward the chemical solution 7 in the processing tank 31, and simultaneously measures The acoustic wave receiver 42 of the measuring tool 40 starts to receive the acoustic wave energy reflected or refracted from the chemical solution 7 in the processing tank 31. The measurement tool 40 can generate desired data of the three-dimensional map of the processing slot 31 through a signal processor 43 according to the sonic energy received by the sonic receiver 42. In some embodiments, the desired data of the three-dimensional map not only displays images of the receiving rack 32 and other elements (for example, heating elements or solution distribution elements (not shown)) in the processing tank 31, but also displays one or more The positions of the wafer 5 and the processing rack 31 in the rack 32 and other components are relative.

On the other hand, the desired data of the position of the wafer 5 may be measured during the process of placing the wafer 5 in the processing tank 31. For example, when the processing tank 31 is filled with the chemical solution 7 and the wafer 5 is placed into the processing tank 31 via the transfer assembly 33, the sonic transmitter 41 of the measuring tool 40 starts to turn toward the processing tank 31. The sonic solution 7 emits sonic energy, and the sonic receiver 42 of the measuring tool 40 starts to receive the sonic energy reflected or refracted from the chemical solution 7 in the processing tank 31. In a specific embodiment, the measurement tool 40 can calculate the position of the wafer 5 through the signal processor 43 according to the sonic energy received by the sonic receiver 42. The above calculation method can satisfy the formula: D = (t2-t1) * V, where t1 is the time of transmitting acoustic energy, t2 is the time of receiving acoustic energy, V is the acoustic energy transmission rate, D is wafer 5 and the measurement tool 40 distance. However, there are many other variations and modifications to the disclosed embodiments.

In another specific embodiment, the measurement tool 40 can calculate the tilt angle of the wafer 5 through the signal processor 43 according to the sound wave energy received by the sound wave receiver 42. The calculation of the tilt angle of the wafer 5 can be performed by the acoustic wave transmitter 41 transmitting two different directions of sound waves at a specific angle, and then the acoustic wave receiver 42 can record the time of receiving the acoustic waves of the different frequencies. . The tilt angle of the wafer 5 can be obtained according to the time difference of receiving acoustic waves of different frequencies and the above-mentioned specific angle.

The operation S11 can be repeatedly performed as many times as long as no error is seen in the processing tank 31 (for example, the wafer 5 is not inserted into the cutout 321 of the receiving rack 32, the wafer 5 is fragmented, or the wafer 5 is caused by the incorrect operation of the transfer assembly 33 Omitted in the processing tank 31). The desired sonic data about the processing tank 31 is further transmitted to the database 70 for storage. Prior to storing the above-mentioned data in the database 70, the desired sonic data on the processing tank 31 may be further processed. For example, during the first five measurements, the average value of the wafer positions can be calculated and stored in the database 70. Alternatively, during the first five measurements, a standard deviation of the wafer position can be calculated and stored in the database 70. In this way, the relationship can be stored in the database 70 A big data pattern of the desired acoustic data in the processing tank 31.

In some embodiments, method S10 omits operation S11. The desired acoustic data about the processing tank 31 is preset in the database 70. In other embodiments, the desired acoustic data about the processing tank 31 is input into the database 70 by the engineer according to the processing knowledge.

The method S10 also includes operation S12, performing a wet chemical processing on a wafer 5 according to a processing program. In some embodiments, a processing procedure for performing a wet chemical process on the wafer 5 by using the processing tank 31 is described as follows:

First, the wafer 5 is transferred into the processing tank 31 in which the chemical solution 7 is stored by the transfer module 33. In detail, as shown in FIG. 6A, before the wafer 5 enters the processing tank 31, the processing tank 31 has stored the chemical solution 7. One or more wafers 5 (only one wafer 5 is shown in FIGS. 6A to 6E) are transferred by the transfer assembly 33 to above the processing tank 31. Each wafer 5 can be firmly held by the two arms 35 of the transfer assembly 33. Next, as shown in FIG. 6B, the transfer module 33 is lowered to immerse the wafer 5 into the chemical solution 7. The movement of the transfer assembly 33 may be stopped when the wafer 5 is in contact with the receiving rack 32. In some embodiments, when the wafer 5 is in contact with the receiving rack 32, the side edge of the wafer 5 is inserted into the cutout 321 of the receiving rack 32, and the wafer 5 is fixed by the cutout 321 and stands upright in the chemical solution 7.

Next, after the wafer 5 contacts the receiving rack 32, as shown in FIG. 6C, the transfer module 33 is detached from the wafer 5 and moved upward to a position higher than the liquid surface of the chemical solution 7. The wafer 5 stays in the chemical solution 7 for a predetermined time, so that the chemical solution 7 reacts with a material layer (not shown) on the surface of the wafer 5. When the wafer 5 is placed in the processing tank 31 within a predetermined time, the transfer module 33 may be dispatched to another location to Transfer the remaining wafers to other processing tanks 31 or other processing devices. Alternatively, the transfer device 40 may be idle without performing other work. Alternatively, during the above-mentioned predetermined time, the transfer module 33 stays in the processing tank 31 continuously, and the transfer module 33 can engage the outer edge of the wafer 5. Then, when the above-mentioned predetermined time is over, as shown in FIG. 6D, the wafer 5 is held by the transfer assembly 33, and as shown in FIG. 6E, the transfer assembly 33 is moved upward to remove the wafer from the chemical solution 7. 5.

According to some embodiments, the wafer 5 is made of silicon, germanium, or other semiconductor materials. According to some embodiments, the wafer 5 is made of a composite semiconductor, such as silicon carbide (SiC), gallium arsenide (GaAs), indium arsenide (InAs), or indium phosphide (InP). According to some embodiments, the wafer 5 is made of an alloy semiconductor, such as silicon germanium (SiGe), silicon germanium carbon (SiGeC), gallium phosphorus arsenide (GaAsP), or indium gallium phosphide (GaInP). According to some embodiments, the wafer 5 includes a crystalline film layer. For example, the wafer 5 has a crystalline film layer covering a bulk semiconductor. According to some embodiments, the wafer 5 may be a silicon-on-insulator (SOI) or a germanium-on-insulator (GOI) substrate.

The wafer 5 may include a plurality of device elements. For example, the device element formed on the wafer 5 may include a transistor, such as: metal oxide semiconductor field effect transistors (MOSFETs), complementary metal oxide semiconductor transistors (complementary metal) oxide semiconductor (CMOS) transistors, bipolar junction transistors (BJT), high-voltage transistors, high-frequency transistors, p-channel field effect transistors (p-channel and / or n-channel) field-effect transistors (PFET)) or P-type field effect transistors (n-channel field-effect transistors (NFET), etc., and other elements. Multiple device elements on wafer 5 may undergo multiple processing processes such as deposition, etching, ion implantation, photolithography, annealing, and / Other processes.

The method S10 also includes operation S13, in which the measurement acoustic wave data on the processing groove 31 is generated through the measurement tool 40. In some embodiments, the measurement acoustic data about the processing tank 31 may be performed in multiple processing programs (for example, the multiple processing programs shown in the above FIGS. 6A to 6E), and the three-dimensional map of the processing tank 31 is performed. Measurement data. Alternatively, the measurement acoustic data about the processing tank 31 may be measurement data of the position of the wafer when a plurality of processing programs are performed. In some embodiments, the method of obtaining the measured acoustic data about the processing tank 31 is the same as or similar to the method of collecting the expected acoustic data about the processing tank 31 in operation S11, and will not be repeated to simplify the description.

In some embodiments, the time point of the measurement performed in operation S13 is the same as the time point of the measurement performed in operation S11. For example, the operation S13 is the same as the operation S11, and the measurement is performed when the wafer 5 is not placed in the processing tank 31 as shown in FIG. 6A or 6E. Alternatively, operation S13 is the same as operation S11, and both are measured during the process of placing the wafer 5 in the processing tank 31 as shown in FIG. 6B. However, there are many other variations and modifications to the disclosed embodiments. The sonic data about the processing tank 31 in operation S13 can be continuously measured, regardless of whether the wafer 5 is placed in the processing tank 31 or not. The measurement acoustic data about the processing tank 31 can be transmitted to the error measurement and classification system 50 in real time through a wired or wireless connection for analysis.

In some embodiments, as the wafer 5 is placed in the chemical solution 7 for a predetermined time, the sound waves emitted by the sound wave transmitter 41 of the measurement tool 40 are increased. The intensity of the energy will also increase (for example: increase the frequency). By dynamically adjusting the intensity of the acoustic wave energy, noise generated by the measurement tool 40 due to interference from by-products (such as metal particles or bubbles) produced in the wet chemical process can be suppressed. Therefore, the measurement accuracy of the measurement tool 40 can be maintained. However, there are many other variations and modifications to the disclosed embodiments. In the other embodiments, the error measurement and classification system 50 presets an adjustment parameter. As the predetermined time that the wafer 5 is placed in the chemical solution 7 increases, the error measurement and classification system 50 adjusts The electronic signal of the measuring tool 40 is used to compensate the noise generated by the measuring tool 40 due to interference from by-products generated in the wet chemical process.

The method S10 also includes operation S14. In operation S14, it is determined whether the measured sonic data about the processing tank 31 generated in operation S13 is consistent with the expected sonic data about the processing tank 31 collected in operation S11. In the example where the measurement acoustic data includes measurement data of the three-dimensional map of the processing tank 31, the error measurement and classification system 50 receives desired data of the three-dimensional map of the processing tank 31 from the database 70 and performs image analysis. When measuring the acoustic wave data including the measurement data of the position of the wafer 5, the error measurement and classification system 50 receives the expected data of the position of the wafer 5 from the database 70 and compares them.

When the data processed by the error measurement and classification system 50 indicates that the desired sonic data is separated from the measurement sonic data (ie, when the error measurement and classification system 50 detects an error or anomaly), the method proceeds to operation S15, Issue a warning condition. In some embodiments, the inconsistent data indicates an error (or anomaly) in the processing tank 31, for example, the wafer 5 is left in the processing tank 31 without being transferred in accordance with the processing program, the wafer 5 is broken and the chip is left in the processing tank 31 The placement position (including the placement angle) of the intermediate or wafer 5 is different from the expected position.

The wafer 5 is not conveyed in accordance with the processing procedure or the wafer 5 is fragmented and left in the processing tank 31, which may cause the wafer 5 subsequently sent into the processing tank 31 for processing to be damaged due to collision. By issuing an alert to the error measurement and classification system 50 and notifying the control system 60 to perform a maintenance procedure, any problems in the processing tank 31 can be identified and resolved, and excessive scrap wafers can be prevented from being generated in the processing tank 31. In some embodiments, the above maintenance procedure includes excluding the chemical solution 7 in the processing tank 31; removing the wafer 5 (or a fragment of the wafer 5) left in the processing tank 31; and providing a new chemical solution 7 again Inside the processing groove 31.

On the other hand, an error in the placement of the wafer 5 may not only cause the wafer 5 and the receiving rack 32 to be squeezed and damaged, but may also cause the results of wet chemical processing to be worse than expected (for example, if the wafer 5 is not maintained upright The chemical solution 7 cannot be quickly removed from the surface of the wafer 5 after the wafer is removed from the chemical solution 7, thereby affecting subsequent process results). The error measurement and classification system 50 issues a warning and informs the control system 60 to execute a pair-wise procedure, which can prevent excessive scrap wafers from being generated in the processing tank 31 and effectively improve the process yield of the wafer 5. In the above alignment procedure, the control system 60 may perform a close-loop control based on the measurement information of the wafer position to adjust the position of the transfer assembly 33 so that the wafer 5 is set in the processing tank 31 The desired position (for example, it is correctly inserted into the cutout 321 of the receiving frame 32).

In some embodiments, the error measurement and classification system 50 includes a computer system to monitor the condition of the manufacturing system 30. In various implementation forms, the device of the computer system includes a network communication device or a network computing device (e.g., mobile phone, Laptop, personal computer, web server). Should be understandable Yes, each of the above devices can be implemented as the above computer system for communicating with the network 10 in a manner as described later. According to various embodiments of the present invention, the above-mentioned computer system (for example, a near-end computer or a networked computer system) includes a bus element or other communication mechanism for communicating information, which connects the sub-system and the element, such as a processing element ( For example, a processor, a micro-analysis device, a digital signal processor (DSP), other processing elements, or a combination thereof, a system memory element (e.g., random access memory (RAM)), a static storage element (e.g., , Read-only memory (ROM), a magnetic disk component (for example, a magnetic component, an optical component, other components, or a combination of the foregoing), a network interface component (for example, a modem, an Ethernet card , Other network interface elements, or a combination thereof), a display element (for example, a cathode ray tube (CRT), a liquid crystal display (LCD), other display elements, or a combination thereof), an input element (for example, a keyboard) , A cursor control element (for example, a mouse or trackball), and an image capture element (for example, an analog or digital camera). In one embodiment, the magnetic disk component includes a database having one or more magnetic disk components.

According to some embodiments of the present invention, the computer system executes one or more sequences including one or more instructions stored in a system memory element by a processor to perform a specific operation. In some embodiments, these instructions can be read into the system memory element from other computer-readable media (such as a static storage element or a magnetic disk element). In other embodiments, the present invention may also be implemented using a hardware circuit instead of (or in combination with) software instructions. According to various embodiments of the present invention, a logic is loaded on a computer-readable medium, which refers to any medium that participates in providing instructions to a processing element for execution. This media can There are many forms, including but not limited to: non-volatile media and volatile media. In one embodiment, the computer-readable medium is non-transitory. In various implementation forms, the non-volatile medium includes an optical disk or a magnetic disk, such as a magnetic disk element, and the volatile medium includes a dynamic memory, such as a system memory element. In an embodiment, the data and information about the execution instructions are transmitted to the computer system through a transmission medium, such as generated in the form of sound or light waves, including radio wave and infrared data communication. According to various embodiments of the present invention, the transmission medium includes a coaxial cable, a copper wire, and an optical fiber, including a wire including a bus bar.

Some general forms of computer-readable media include, for example, floppy disks, flexible disks, hard disks, magnetic tapes, any other magnetic media, CD-ROM, Any other optical media, punch cards, paper tape, any other physical media with a punch pattern, random access memory (RAM), programmable read-only memory (PROM), Removable Programmable Read Only Memory (EPROM), Flash Erasable Programmable Read Only Memory (FLASH-EPROM), any other memory warp or cartridge, carrier wave, or Any other media that the computer can read. According to various embodiments of the present invention, the computer system executes the instruction sequence to implement the present invention. According to various other embodiments of the present invention, various computer systems, such as computer systems, are coupled by a communication connection (for example, similar to, for example, LAN, WLAN, PTSN, and / or various other wired or wireless networks (including telecommunications) (telecommunications, wireless, and mobile phone networks), and execute instruction sequences to implement the present invention in cooperation with other systems. According to various embodiments of the present invention, the above computer system transmits and receives messages, data, information, and through a communication connection and a communication interface, and Instructions, including one or more programs (in other words, application code). The processing element may execute the received code and / or the code stored in the magnetic disk element or some other non-volatile storage element for execution.

Where applicable, various implementation aspects of the present invention may be implemented using hardware, software, or a combination of hardware and software. In addition, where applicable, the above-mentioned different hardware components and / or software components are incorporated into a composite component including software, hardware, or both without departing from the spirit of this disclosure. Where applicable, the above-mentioned various hardware components and / or software components are divided into sub-components including software, hardware, or both without departing from the scope of the present disclosure. In addition, where applicable, it is important to understand that software components can be implemented as hardware components and vice versa. In accordance with this disclosure, software (such as computer code and / or data) may be stored on one or more computer-readable media. It should also be understood that the software described above may use one or more general-purpose or dedicated computers and / or computer systems, networked and / or non-networked. Where applicable, the order of the various steps described above may be changed, incorporated into composite steps, and / or sub-steps separately to provide the functions described herein.

This disclosure provides an embodiment of a method for measuring errors at a manufacturing facility. Whether abnormal conditions occur in the processing tank can be determined by measuring and analyzing the acoustic wave data in the processing tank. When an abnormal situation occurs, the control system takes an immediate response and appropriately handles it. Therefore, it is possible to avoid a situation in which the result of the wet chemical process is reduced due to an abnormality inside the manufacturing facility, and greatly improve the manufacturing yield of the wafer processed by the manufacturing facility.

Some embodiments of the present disclosure provide an error measurement method in a manufacturing facility. The above method includes moving a wafer into a processing tank, and The wafer is removed from the processing tank after time. The above method further includes transmitting a sound wave energy to the processing tank, and generating a measurement sound wave data according to the sound wave energy returned from the processing tank. The above method also includes comparing the measured sound wave data with a desired sound wave data, and triggering an alert when the measured sound wave data is inconsistent with the expected sound wave data.

In the above embodiment, the measurement acoustic data includes a measurement data of the three-dimensional map of the processing groove, and the expected acoustic data includes a desired data of the three-dimensional map of the processing groove. The operation of transmitting acoustic wave energy to the processing tank and measuring the acoustic wave data based on the acoustic wave energy returned from the processing tank is performed after the wafer is removed from the processing tank. When the alarm is triggered, the above method further includes performing a maintenance procedure during which a broken piece of the wafer remaining in the processing tank is removed.

Alternatively, the measurement acoustic data includes a measurement data of the wafer position, and the expected acoustic data includes a desired data of the wafer position. The operation of transmitting acoustic wave energy to the processing tank and measuring the acoustic wave data based on the acoustic wave energy returned from the processing tank is performed during the process of moving the wafer into the processing tank. When the alarm is triggered, the method further includes performing a positioning procedure. In the positioning procedure, the wafer position is adjusted according to the measured acoustic data.

In the above embodiment, the wafer moving into the processing tank and removing the wafer from the processing tank are performed by a transfer module, and the transfer module places the wafer on a receiving rack located inside the processing tank.

In the above embodiment, the sound wave energy is increased as the predetermined time is increased.

Some embodiments of the present disclosure provide a manufacturing facility. The manufacturing facility includes a processing tank configured for loading a chemical solution. The manufacturing facility further includes a measurement tool. The measurement tool is configured to emit a sonic energy to the The working slot generates a measurement sound wave data according to the sound wave energy sent back from the processing slot. The manufacturing facility also includes a fault measurement and classification system. The error measurement and classification system is configured to compare the measured sound wave data with a desired sound wave data, and trigger an alarm when the measured sound wave data is inconsistent with the expected sound wave data.

In the above embodiment, the measurement tool is disposed outside the processing tank, and the sonic energy emitted by the measurement tool is transmitted through a side wall of the processing tank to the chemical solution.

Although the embodiments and their advantages have been described in detail above, it should be understood that various changes, substitutions and modifications can be made to the present disclosure without departing from the spirit and scope of the present disclosure limited by the scope of the attached patent application. Furthermore, the scope of the application is not intended to be limited to the specific embodiments of the processes, machines, manufacturing, substances, tools, methods, and procedures described in the specification. As a person of ordinary skill in the art, he will easily understand from this disclosure. According to this disclosure, it is possible to use existing or to be developed in the future to perform basically the same functions or implement basic Process, machine, manufacture, material composition, tool, method or step with the same result. Accordingly, the scope of the accompanying patent applications is intended to include within their scope such processes, machines, manufacture, compositions of matter, tools, methods, or steps. In addition, each patent application scope constitutes a separate embodiment, and the combination of different patent application scopes and embodiments is within the scope of this disclosure.

Claims (10)

An error measurement method in a manufacturing facility includes: moving a wafer into a processing tank, and removing the wafer from the processing tank after a predetermined time; transmitting a sound wave energy to the processing tank, wherein the The sonic energy is enhanced with the increase of the predetermined time, and a measurement sonic data is generated according to the sonic energy returned from the processing tank; and the measurement sonic data is compared with a desired sonic data, and when the measurement sonic data and An alarm is triggered when the expected sonic data is inconsistent. The error measurement method in a manufacturing facility as described in item 1 of the scope of patent application, wherein the measurement acoustic data includes a measurement data of a three-dimensional map of the processing tank, and the expected acoustic data includes a three-dimensional map of the processing tank An expected profile of the map. The error measurement method in a manufacturing facility as described in the second item of the patent application scope, wherein the operation of transmitting the sonic energy to the processing tank and generating the measurement sonic data based on the sonic energy returned from the processing tank is Performed after the wafer is removed from the processing tank. The error measurement method in a manufacturing facility as described in item 3 of the scope of patent application, further includes performing a maintenance procedure when the alert is triggered, and in the maintenance procedure, removing the wafer left in the processing tank A fragment. The error measurement method in a manufacturing facility as described in item 1 of the scope of the patent application, wherein the measurement acoustic data includes a measurement data of the wafer position, and the expected acoustic data includes a desired data of the wafer position . The wrong measurement method in the manufacturing facility as described in item 5 of the scope of patent application, The operation of transmitting the sonic energy to the processing tank and generating the measurement sonic data according to the sonic energy returned from the processing tank is performed during the process of moving the wafer into the processing tank; wherein the error measurement method Furthermore, when the alarm is triggered, a positioning procedure is executed. In the positioning procedure, the wafer position is adjusted according to the measurement acoustic data. The error measurement method in a manufacturing facility as described in any one of claims 1 to 6, wherein the wafer is moved into the processing tank and the wafer is removed from the processing tank through a transfer module. The transfer assembly places the wafer on a receiving rack located inside the processing tank. The error measurement method in a manufacturing facility as described in item 7 of the scope of patent application, further includes connecting a measurement tool that emits the acoustic wave energy to the transmission component. A manufacturing facility includes: a processing tank configured to load a chemical solution; a transfer component configured to move a wafer into the processing tank and remove the wafer from the processing tank; a first measurement A tool is disposed on the outside of one side wall of the processing tank, and is used for transmitting a sonic energy to the processing tank, and generating a measurement sonic data according to the sonic energy returned from the processing tank; a second measurement tool , Connected to the transmission component, for transmitting another sonic energy to the processing tank, and generating another measurement sonic data according to the another sonic energy returned from the processing tank; and an error measurement and classification System configured to compare the measured acoustic data And the expected acoustic wave data, and an alarm is triggered when the measured acoustic wave data is inconsistent with the expected acoustic wave data. The manufacturing facility according to item 9 of the scope of patent application, wherein the sonic energy emitted by the first measuring tool is transmitted to the chemical solution after penetrating the side wall of the processing tank.