TWI674589B - Manufacturing method of graphene circuit layer and flexible touch panel - Google Patents

Abstract

A method for manufacturing a graphene circuit layer includes the following steps. A first substrate is provided. A metal film is formed on the first substrate. The metal film is patterned to obtain a patterned metal film. A graphene layer is formed on the surface of the patterned metal film, and the graphene layer and the patterned metal film have the same pattern. The graphene layer is transferred from the surface of the patterned metal film to the second substrate by using an electrostatic method. Another embodiment provides a flexible touch panel including a graphene circuit layer obtained by the method for manufacturing a graphene circuit layer.

Description

Method for manufacturing graphene circuit layer and flexible touch panel

The invention relates to a method for manufacturing a circuit layer and a touch panel, and more particularly to a method for manufacturing a graphene circuit layer and a flexible touch panel including the graphene circuit layer.

Indium tin oxide (ITO, Indium Tin Oxide) is a circuit material commonly used in touch panels, but because ITO does not have bendability, it cannot be applied to flexible substrates. Therefore, the use of flexible materials such as graphene, nanometals, or carbon nanotubes has been developed to replace ITO. Among them, graphene has attracted attention due to its characteristics of low price, high electron drift, high electrical conductivity, and high thermal conductivity.

At present, the manufacturing method of the graphene circuit layer is mainly through a chemical vapor deposition method (CVD, Chemical Vapor Deposition). It first generates graphene on a metal carrier and patterns the graphene, then removes the metal carrier and transfers the graphene to the desired substrate. However, the conventional manufacturing method includes at least the following disadvantages: etching the grown graphene will cause carbon pollution; using ferric chloride solution (FeCl ₃ ), ammonium persulfate solution ((NH ₄ ) ₂ SO ₈ ) or nitric acid Iron solution (Fe (NO ₃ ) ₃ ) as an etching solution to remove metal carriers, in addition to the solution itself being toxic, will also cause metal pollution; and the use of polymethyl methacrylate (PMMA), polydimethacrylate When graphene is transferred using methyldimethylsiloxane (Polydimethylsiloxane, PDMS) or thermal debonding film, there will be residual colloids or impurities on the graphene, which will affect the conductivity of graphene. Therefore, improving the manufacturing method of the graphene circuit layer is a problem that needs to be solved at present.

The invention provides a method for manufacturing a graphene circuit layer, which has the effects of simplifying the complexity of the manufacturing process, improving the yield and the uniformity of the manufacturing process, and minimizing metal / carbon pollution, and can effectively reuse the patterned metal film.

The invention provides a flexible touch panel, which includes a graphene circuit layer prepared by the method for manufacturing a graphene circuit layer, and has better reliability.

The method for manufacturing a graphene circuit layer of the present invention includes the following steps. A first substrate is provided. A metal film is formed on the first substrate. The metal film is patterned to obtain a patterned metal film. A graphene layer is formed on the surface of the patterned metal film, and the graphene layer and the patterned metal film have the same pattern. The graphene layer is transferred from the surface of the patterned metal film to the second substrate by an electrostatic method.

In an embodiment of the present invention, the method for transferring a graphene layer from a surface of a patterned metal film to a second substrate includes the following steps. Align the graphene layer on the second substrate. The graphene layer is charged with a first charge. The second substrate is charged with a second charge, wherein the first charge is electrically different from the second charge. A graphene layer having a first charge is attracted to a second substrate having a second charge.

In an embodiment of the present invention, before the graphene layer having the first charge is attracted to the second substrate having the second charge, the method further includes removing the charge of the patterned metal film.

In an embodiment of the present invention, before the graphene layer with the first charge is attracted to the second substrate with the second charge, the method further includes: charging the patterned metal film with the first charge.

In an embodiment of the present invention, before forming the metal film on the first substrate, the method further includes forming a buffer layer on the first substrate, and positioning the metal film and the first substrate on opposite sides of the buffer layer, respectively.

In an embodiment of the present invention, the method for forming the graphene layer on the surface of the patterned metal film may include chemical vapor deposition (CVD), and the reaction temperature of forming the graphene layer on the surface of the patterned metal film may be Between 790 ° C and 1050 ° C.

In an embodiment of the present invention, after transferring the graphene layer from the surface of the patterned metal film to the second substrate, the method further includes using the patterned metal film and the first substrate to form another graphene layer. On the surface of the patterned metal film.

In an embodiment of the present invention, after the graphene layer is transferred from the surface of the patterned metal film to the second substrate, the method further includes covering the graphene layer with an optical adhesive layer.

In an embodiment of the present invention, the attractive force between the graphene layer with the first charge and the second substrate with the second charge is greater than that between the graphene layer with the first charge and the patterned metal film. Attraction.

In an embodiment of the present invention, the first substrate is, for example, a wafer.

In an embodiment of the invention, a material of the metal film is copper or germanium.

The flexible touch panel of the present invention includes a second substrate and a graphene circuit layer. The graphene circuit layer is disposed on the second substrate, and the graphene circuit layer is made according to the above-mentioned method for manufacturing a graphene circuit layer.

In an embodiment of the present invention, the flexible touch panel further includes an optical adhesive layer. The optical adhesive layer may be disposed on the second substrate and cover the graphene circuit layer.

Based on the above, in the method for manufacturing a graphene circuit layer of the present invention, a graphene layer is first formed on a surface of a patterned metal film, wherein the graphene layer and the patterned metal film have the same pattern. Next, the graphene layer is transferred from the surface of the patterned metal film to the second substrate by an electrostatic method, thereby forming a graphene circuit layer. With this design, the method for manufacturing the graphene circuit layer of the present invention has the effects of simplifying the complexity of the manufacturing process, improving yield and process uniformity, and minimizing metal / carbon pollution, and can effectively reuse the patterned metal film .

In order to make the above features and advantages of the present invention more comprehensible, embodiments are hereinafter described in detail with reference to the accompanying drawings.

FIG. 1A to FIG. 1F are cross-sectional views illustrating a flow of a method for manufacturing a graphene circuit layer according to an embodiment of the present invention. FIG. 2A is a top view of the graphene layer of FIG. 1D. FIG. 2B is a top view of the graphene circuit layer of FIG. 1F. In addition, for the sake of clarity, the figures are not drawn to scale.

Please refer to FIG. 1A. In this embodiment, a first substrate 100 is provided first. Here, the first substrate 100 is, for example, a wafer or other solid material capable of withstanding high temperatures, but is not limited thereto. Next, a buffer layer 102 may be selectively formed on the first substrate 100. In some embodiments, the material of the buffer layer 102 is, for example, silicon oxide, silicon nitride, or other suitable oxide layers and nitride layers, but is not limited thereto. In this embodiment, the method for forming the buffer layer 102 is, for example, a chemical vapor deposition method, but is not limited thereto.

Next, referring to FIG. 1B, a metal film 104 is formed on the first substrate 100. In this embodiment, the metal film 104 and the first substrate 100 are located on opposite sides of the buffer layer 102, respectively. The buffer layer 102 can be used to increase the adhesion between the first substrate 100 and the metal film 104. Here, the material of the metal film 104 is, for example, copper or germanium, or other metals that can catalyze the growth of graphene by its surface, and easily form a single layer of graphene. A method of forming the metal film 104 is, for example, a chemical vapor deposition method. In addition, according to the material selected for the first substrate 100, the metal film 104 and the first substrate 100 may be connected by hydrogen bonding, ionic bonding, or covalent bonding. In this embodiment, since the buffer layer 102 is provided, the material selected for the buffer layer 102 is used to make hydrogen bonding between the buffer layer 102 and the first substrate 100 and between the metal film 104 and the buffer layer 102 through hydrogen bonding. , Van der Waals' force, or covalent bonding.

Referring to FIG. 1C, the metal film 104 is patterned to obtain a patterned metal film 106. In this embodiment, the method for forming the patterned metal film 106 is, for example, first forming a photoresist layer (not shown) on the metal film 104, and obtaining a patterned photoresist layer (not shown) by a lithography etching process. Then, an etching process is performed on the metal film 104 to obtain a patterned metal film 106. The etching process may be a dry etching process or a wet etching process. Among them, the dry etching process is mainly used in a process with a line width less than 0.35 um, and the wet etching process is mainly used in a process with a line width greater than 0.35 um, but it is not limited thereto.

Please refer to FIG. 1D and FIG. 2A at the same time. FIG. 1D is a cross-sectional view of the graphene layer 108 growing on the patterned metal film 106. FIG. 2A is a plan view of the graphene layer 108 growing on the patterned metal film (not labeled). The graphene layer 108 has the same pattern as the patterned metal film 106. In some embodiments, the method for forming the graphene layer 108 includes a chemical vapor deposition method or a plasma-assisted chemical vapor deposition method, but is not limited thereto. Among them, the chemical vapor deposition method is the main growth method of graphene at present, and the plasma-assisted chemical vapor deposition method is a method that can reduce the growth temperature of graphene.

Hereinafter, the chemical vapor deposition method will be described as an example. In this embodiment, after the patterned metal film 106 is heated to a high temperature, a gaseous carbonaceous material (C _x H _y ) is added as a source of carbon atoms of the graphene, wherein the gaseous carbonaceous material is, for example, methane (CH ₄ ) , But not limited to this. Then, the patterned metal film 106 is used to catalyze the reaction, so that the gaseous carbon-containing material decomposes carbon atoms at a high temperature, and is deposited on the patterned metal film 106 to form a graphene layer 108 during the cooling process. Among them, the gaseous carbon source has better reproducibility and uniformity for forming the graphene layer 108; and the patterned metal film 106 as a catalyst can reduce the graphene growth temperature (the original growth temperature is about 1300 ° C), and the patterned metal film The higher the purity of 106, the better the quality of the formed graphene layer 108. In this embodiment, the reaction temperature for forming the graphene layer 108 on the patterned metal film 106 is, for example, between 790 ° C and 1050 ° C. In another embodiment, a plasma-assisted chemical vapor deposition method can also be used to form the graphene layer on the patterned metal film, and the reaction temperature is, for example, less than 790 ° C.

In addition, in the process of forming the graphene layer 108, an appropriate amount of the first auxiliary gas and an appropriate amount of the second auxiliary gas must be provided. The first auxiliary gas is, for example, argon (Ar), which can be used as a protective and diluted safety gas, and avoids sublimation of the patterned metal film 106. The second auxiliary gas is, for example, hydrogen (H ₂ ), which has the effect of reducing the number of graphene nucleation points and making up for the defects of graphene growth, but an excessive amount of the second auxiliary gas will etch the graphene.

In detail, in some embodiments, forming the graphene layer 108 may include the following steps. Provide the right amount of argon and hydrogen. The patterned metal film 106 is raised to a first temperature at a stable temperature increase rate. Add methane. The patterned metal film 106 is reduced to a second temperature at a first temperature reduction rate. The patterned metal film 106 is lowered to a third temperature at a second cooling rate. Remove hydrogen and methane, and quickly cool to room temperature. Among them, the gas flow rate of argon gas is, for example, 150 to 250 cm3 / min; the gas flow rate of hydrogen gas is, for example, 135 to 225 cm3 / min; the heating rate is, for example, 15 to 25 ° C / min; and the first temperature is, for example, 790 to 1050 ℃; methane gas flow rate is, for example, 1.5 to 2.5 cubic centimeters / minute; the first cooling rate is, for example, 7.5 to 12.5 ° C / min; the second temperature is, for example, 395 to 525 ° C; The minute and the third temperature are, for example, 158 to 210 ° C, but the present invention is not limited thereto.

In this embodiment, the graphene layer 108 is grown on the top surface 1061 and the side surfaces 1062 of the patterned metal film 106 relative to the first substrate 100. The graphene layer 108 and the patterned metal film 106 have the same pattern, and the graphene layer 108 and the patterned metal film 106 are bonded by Van der Waals force. It should be noted that when designing the graphene circuit, if the graphene layer 108 can be grown on which side of the patterned metal film 106, the surface of the patterned metal film 106 that does not want to grow the graphene layer 108 can be oxidized. In order to reduce the catalytic effect at the oxidized patterned metal film 106, the graphene layer 108 cannot be grown. In addition, a part of the formed graphene layer 108 may be subjected to a development etching process, such as a dry etching process, so that the pattern of the graphene layer 108 can conform to the designed circuit.

In some embodiments, the number of graphene layers 108 formed is, for example, a 1 to 3 layer stack. Preferably, the number of graphene layers 108 formed is a single layer. When the number of graphene layers 108 is a single layer, there are advantages of excellent conductivity and few grain boundaries. When the number of graphene layers 108 is two to three, the graphene layer 108 is relatively complete and dense, and has the advantages of rapid growth and high yield. However, when the number of graphene layers 108 is more than three, its conductivity is extremely poor and it is not suitable as a circuit layer.

Based on the above, in the method for manufacturing the graphene circuit layer of this embodiment, the metal film 104 is pre-etched into the patterned metal film 106 first, and then the graphene layer 108 is formed on the patterned metal film 106, and graphite is formed. The olefin layer 108 has the same pattern as the patterned metal film 106. Therefore, compared with the conventional method for manufacturing the graphene circuit layer, the method for manufacturing the graphene circuit layer in this embodiment can greatly reduce the process of re-etching the graphene layer 108 and has the effect of reducing carbon pollution.

Please continue to refer to FIG. 1E. FIG. 1E illustrates the electrostatic treatment and transfer process before the graphene layer 108 is transferred, including the following steps. A second substrate 200 is provided, and the graphene layer 108 is aligned on the second substrate 200. Next, the graphene layer 108 is charged with a first charge E1 and the second substrate 200 is charged with a second charge E2. The first charge E1 and the second charge E2 are electrically different.

In detail, the second substrate 200 may include a flexible substrate or an inflexible substrate, and the material is, for example, a plastic plate or glass, but is not limited thereto. The second substrate 200 may be a touch panel, a smart window, or a transfer substrate, but is not limited thereto. Among them, the transfer substrate can be used as an intermediate substrate for other transfer processes, for example, a transfer substrate used in a roll to roll process, such as a polyvinylidene difluoride (PVDF) film, which can benefit a large number of Production, but not limited to this. Next, the graphene layer 108 on the first substrate 100 and the location where the circuit layer is to be formed on the second substrate 200 are placed face to face, and are aligned with each other to avoid deviation in the transfer position.

Next, a static electricity generating device 300 is provided. The static electricity generating device 300 is, for example, an electrostatic gun, but is not limited thereto. An electrostatic field is applied to the graphene layer 108 and the second substrate 200 by the static electricity generating device 300, so that the graphene layer 108 and the second substrate 200 each have a first electric charge E1 and a second electric charge E2, which are electrically different. In this embodiment, the first charge E1 is, for example, a positive charge, and the second charge E2 is, for example, a negative charge. In another embodiment, the first charge E1 is, for example, a negative charge, and the second charge E2 is, for example, a positive charge.

Next, the graphene layer 108 is transferred from the surfaces 106 l and 1062 of the patterned metal film 106 to the surface 2001 of the second substrate 200 by an electrostatic method. Specifically, the attractive force between the graphene layer 108 with the first charge E1 and the second substrate 200 with the second charge E2 is made larger than that of the graphene layer 108 with the first charge and the patterned metal film 106. The attraction between the two is to attract the graphene layer 108 with the first charge E1 to the second substrate 200 with the second charge E2 to form a graphene circuit layer 202, as shown in FIGS. 1F and 2B. . FIG. 2B is a top view of the graphene circuit layer 202 on the second substrate 200.

Specifically, in this embodiment, since the first substrate 100 and the buffer layer 102 and the buffer layer 102 and the patterned metal film 106 are connected by hydrogen bonding, Van der Waals force, or covalent bonding. The graphene layer 108 and the patterned metal film 106 are bonded by Van der Waals force. Therefore, after giving the graphene layer 108 and the second substrate 200 a sufficient amount of electric charge, the electrostatic force formed between the graphene layer 108 and the second substrate 200 can be made greater than that of the graphene layer 108 and the patterned metal film 106. The van der Waals force causes the graphene layer 108 to be detached from the patterned metal film 106 and transferred to the second substrate 200. At this point, the production of the graphene circuit layer has been completed.

In more detail, in some embodiments, since the distance between the graphene layer 108 and the second substrate 200 may affect the electrostatic force required for the graphene layer 108 to complete the transfer, for example, when the second substrate 200 is negatively charged (1 * 10 ^-5 Coulomb force), the graphene layer 108 is positively charged (-1 * 10 ^-3 Coulomb force), when the second substrate 200 and the graphene layer 108 are 0.5m apart, the graphene per gram unit There is a force of about 360 dyne, and the graphene layer 108 is separated from the patterned metal film 106 and transferred to the second substrate 200.

It should be noted that the strength of Van der Waals force is determined by the molecular weight and Mohr number. Therefore, in this embodiment, since the molecular weights of the buffer layer 102 and the first substrate 100 may be much larger than those of the graphene layer 108, the total value of the Van val force between the first substrate 100 and the buffer layer 102, and the buffer layer The total value of the Van val force between 102 and the patterned metal film 106 is greater than the electrostatic force between the graphene layer 108 and the second substrate 200. In other words, when the graphene layer 108 is detached from the patterned metal film 106 and transferred to the second substrate 200, the patterned metal film 106 and / or the buffer layer 102 is not transferred to the second substrate 200.

It should be noted that, in another embodiment, before the graphene layer 108 with the first charge E1 is attracted to the second substrate 200 with the second charge E2, the patterned metal film may also be removed. The electric charge of 106 weakens or eliminates the Van der Waals force between the graphene layer 108 and the patterned metal film 106, so that the graphene layer 108 can be easily detached from the patterned metal film 106. In another embodiment, before the graphene layer 108 with the first charge E1 is attracted to the second substrate 200 with the second charge E2, the patterned metal film 106 may also be made using the static electricity generating device 300. With the first charge E1, that is, the patterned metal film 106 and the graphene layer 108 on the first substrate 100 have the same electrical charge, thereby increasing the repulsion between the graphene layer 108 and the patterned metal film 106 And reduce or eliminate the Van der Waals force between the graphene layer 108 and the patterned metal film 106, so that the graphene layer 108 can be easily detached from the patterned metal film 106. In some embodiments, when the graphene layer 108 and the patterned metal film 106 are both provided with the first charge E1 by using the static electricity generating device 300, the second substrate 200 may be selectively provided with the second charge E2 in charge balance Even if the second substrate 200 is not charged, at this time, the repulsive force between the graphene layer 108 and the patterned metal film 106 can still cause the graphene layer 108 to be detached from the patterned metal film 106 and transferred to the second substrate 200. .

It should be noted that, in this embodiment, when the graphene layer 108 is grown on the top surface 1061 and both side surfaces 1062 of the patterned metal layer 106, the line width of the orthographic projection of the graphene layer 108 on the first substrate 100 It is W1, as shown in FIG. 1D and FIG. 2A. Next, referring to FIG. 1F and FIG. 2B simultaneously, when the graphene layer 108 is transferred to the second substrate 200 and the graphene circuit layer 202 is formed, the line width of the orthographic projection of the graphene circuit layer 202 on the second substrate 200 is W2, where the line width W2 is greater than the line width W1. Specifically, the line width W1 represents the width of the graphene layer 108 located on the top surface 1061 of the patterned metal film 106, and the line width W2 represents the graphene circuit layer 202 transferred to the surface 2001 of the second substrate 200. The width. However, since the graphene circuit layer 202 includes the graphene layer 108 on the top surface 1061 of the patterned metal film 106 and the graphene layer 108 on the side surface 1062, the line width W2 of the transferred graphene circuit layer 202 is greater than The line width W1 of the graphene layer 106 before the transfer is not limited thereto. In some embodiments, when there is only the graphene layer 108 on the top surface 1061 of the patterned metal film 106, the line width W2 may also be equal to the line width W1. Therefore, when designing the graphene circuit layer 202 and the patterned metal film 106, the above parts need to be taken into consideration.

Next, referring to FIG. 1G, the optical adhesive layer 204 is covered on the graphene layer 202 so that the graphene circuit layer 202 is located between the second substrate 200 and the optical adhesive layer 204. Here, the optical adhesive layer 204 may include an optical adhesive (Optical Clear Adhesive, OCA), or both a photoresist (OC) and OCA. In detail, in this embodiment, OCA can be directly used as a protective layer and adhered to the graphene layer 202, so as to fix the position of the graphene circuit layer 202 in a sandwich sandwich manner and prevent it from being scratched. In some embodiments, the OC can be used as a protective layer to cover the graphene layer 202, and then the OCA can be attached to the OC to fix the position of the graphene circuit layer 202 and prevent it from being scratched. effect.

It is worth noting that after the graphene layer 108 is transferred from the top surface 1061 and both side surfaces 1062 of the patterned metal film 106 to the second substrate 200, the patterned metal film 106 and the first substrate 100 described above can also be used. Repeat to form another graphene layer. In detail, in the method for manufacturing the graphene circuit layer of this embodiment, it is not necessary to remove the patterned metal film 106 with an etching solution (for example, FeCl ₃ ). Therefore, the patterning is performed in an electrostatic manner. After the graphene layer 108 on the metal film 106 is transferred, the electrical conduction method can be used to detect whether the patterned metal film 106 is damaged. If there is no damage, the patterned metal film 106 can be reused, and the steps of FIGS. 1D to 1F can be repeated to produce a graphene layer having the same graphene circuit pattern. Therefore, the manufacturing method of the graphene circuit layer in this embodiment can effectively simplify the complexity of the manufacturing process, improve the yield and the uniformity of the manufacturing process, minimize the metal pollution generated during the manufacturing process, and effectively reuse the patterned metal film.

It should be noted that, compared with the conventional method for manufacturing a graphene circuit layer, in the method for manufacturing a graphene circuit layer in this embodiment, since the graphene layer 108 is transferred by static electricity, it does not require Compounds such as polymethyl methacrylate and polydimethylsiloxane are used, or materials such as thermal debonding films are used. Therefore, in this embodiment, there will be no remaining colloids or impurities on the graphene circuit layer 202 transferred to the second substrate 200, so that the graphene circuit layer 202 of this embodiment can maintain good conductivity and make An electronic product including the graphene circuit layer 202 has better reliability.

In addition, in some embodiments, the graphene circuit layer prepared by the method for manufacturing a graphene circuit layer can be applied to a flexible touch panel, a solar cell, an organic light emitting diode, a smart window, and the like. Taking a solar cell as an example, a graphene circuit layer can be applied to a P-N junction of a solar cell, with graphene as a P-type, and doped and modified graphene as an N-type.

In summary, the present invention provides a method for manufacturing a graphene circuit layer, which uses a method of forming a patterned metal film in advance, so that the graphene layer formed on the patterned metal film can have the same properties as the patterned metal film. Pattern, thereby reducing carbon pollution caused by re-etching of the thin graphite layer. Next, the method of electrostatically transferring the graphene layer is used to make the patterned metal film reusable, thereby simplifying the complexity of the manufacturing process, improving yield and process uniformity, minimizing metal / carbon pollution, and effectively reusing patterns. Chemical film. In addition, a flexible touch panel including the graphene circuit layer obtained by the above manufacturing method may also have better reliability.

Although the present invention has been disclosed as above with the examples, it is not intended to limit the present invention. Any person with ordinary knowledge in the technical field can make some modifications and retouching without departing from the spirit and scope of the present invention. The protection scope of the present invention shall be determined by the scope of the attached patent application.

100‧‧‧first substrate

102‧‧‧ buffer layer

104‧‧‧metal film

106‧‧‧ patterned metal film

1061‧‧‧Top surface

1062‧‧‧Side surface

108‧‧‧graphene layer

200‧‧‧ second substrate

2001‧‧‧ surface

202‧‧‧graphene circuit layer

204‧‧‧Optical adhesive layer

300‧‧‧ static electricity generating device

E1‧‧‧First charge

E2‧‧‧Second Charge

W1‧‧‧line width

W2‧‧‧line width

FIG. 1A to FIG. 1G are cross-sectional views illustrating a flow of a method for manufacturing a graphene circuit layer according to an embodiment of the present invention. FIG. 2A is a top view of the graphene layer of FIG. 1D. FIG. 2B is a top view of the graphene circuit layer of FIG. 1F.

Claims (10)

A method for manufacturing a graphene circuit layer includes: providing a first substrate; forming a metal film on the first substrate; patterning the metal film to obtain a patterned metal film; forming a graphene layer on the pattern The surface of the metallized film, wherein the graphene layer and the patterned metal film have the same pattern; and using static electricity to make the electrostatic force formed between the graphene layer and the second substrate greater than the graphene layer and The attractive force between the patterned metal film and transfer the graphene layer from the surface of the patterned metal film to a second substrate, wherein the graphene layer is transferred from the surface of the patterned metal film to After the second substrate, it further comprises: using the patterned metal film and the first substrate to form another graphene layer on the surface of the patterned metal film. The method for manufacturing a graphene circuit layer as described in item 1 of the patent application range, wherein the method of transferring the graphene layer from the surface of the patterned metal film to the second substrate includes: Place on the second substrate; charge the graphene layer with a first charge; charge the second substrate with a second charge, wherein the first charge is electrically different from the second charge; and the first charge The charged graphene layer is attracted to the second substrate with the second charge. The method for manufacturing a graphene circuit layer as described in item 2 of the patent application scope, wherein before the graphene layer with the first charge is attracted to the second substrate with the second charge, further includes: The charge of the patterned metal film is removed. The method for manufacturing a graphene circuit layer as described in item 2 of the patent application scope, wherein before the graphene layer with the first charge is attracted to the second substrate with the second charge, further includes: The patterned metal film is charged with the first charge. The method for manufacturing a graphene circuit layer as described in item 1 of the patent application scope, before forming the metal film on the first substrate, further includes: forming a buffer layer on the first substrate, so that the metal film The first substrates are respectively located on opposite sides of the buffer layer. The method for manufacturing a graphene circuit layer as described in item 1 of the patent application range, wherein the method of forming the graphene layer on the surface of the patterned metal film includes a chemical vapor deposition method to form the graphene layer on the patterned The reaction temperature of the surface of the metal film is between 790 ° C and 1050 ° C. The method for manufacturing a graphene circuit layer as described in item 1 of the patent application scope, wherein after transferring the graphene layer from the surface of the patterned metal film to the second substrate, further comprising: covering an optical adhesive layer On the graphene layer. The method for manufacturing a graphene circuit layer as described in item 1 of the patent application range, wherein the attractive force between the graphene layer carrying the first charge and the second substrate carrying the second charge is greater than that The attractive force between the graphene layer of the first charge and the patterned metal film. The method for manufacturing a graphene circuit layer as described in item 1 of the patent application, wherein the first substrate is a wafer. The method for manufacturing a graphene circuit layer as described in item 1 of the patent application range, wherein the material of the metal film is copper or germanium.