TWI671915B - Light modulator and laser radar using the same - Google Patents
Light modulator and laser radar using the same Download PDFInfo
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- TWI671915B TWI671915B TW107136617A TW107136617A TWI671915B TW I671915 B TWI671915 B TW I671915B TW 107136617 A TW107136617 A TW 107136617A TW 107136617 A TW107136617 A TW 107136617A TW I671915 B TWI671915 B TW I671915B
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- 239000004973 liquid crystal related substance Substances 0.000 claims abstract description 45
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 229910052751 metal Inorganic materials 0.000 claims description 27
- 239000002184 metal Substances 0.000 claims description 27
- 239000010407 anodic oxide Substances 0.000 claims description 24
- 230000003287 optical effect Effects 0.000 claims description 16
- 230000003647 oxidation Effects 0.000 claims description 9
- 238000007254 oxidation reaction Methods 0.000 claims description 9
- 239000002245 particle Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 claims 1
- 230000009286 beneficial effect Effects 0.000 abstract description 4
- 229910052782 aluminium Inorganic materials 0.000 description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 238000007743 anodising Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000003792 electrolyte Substances 0.000 description 5
- 230000017525 heat dissipation Effects 0.000 description 4
- 239000011148 porous material Substances 0.000 description 4
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 238000002048 anodisation reaction Methods 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- SNAAJJQQZSMGQD-UHFFFAOYSA-N aluminum magnesium Chemical compound [Mg].[Al] SNAAJJQQZSMGQD-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133382—Heating or cooling of liquid crystal cells other than for activation, e.g. circuits or arrangements for temperature control, stabilisation or uniform distribution over the cell
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/481—Constructional features, e.g. arrangements of optical elements
- G01S7/4814—Constructional features, e.g. arrangements of optical elements of transmitters alone
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Computer Networks & Wireless Communication (AREA)
- Radar, Positioning & Navigation (AREA)
- Remote Sensing (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
本發明提供一種光調制器,包括:第一光調制部,所述第一光調制部包括第一基板以及設置於所述第一基板上之第一透明導電層及第一導熱層;第二光調制部,與所述第一光調制部相對設置,所述第二光調制部包括第二基板以及設置於所述第二基板上之第二透明導電層及第二導熱層,所述第二導熱層及所述第一導熱層用於將入射光經過所述光調制器時所產生之熱量導出;以及液晶層,所述液晶層設置於所述第一光調制部及所述第二光調制部之間,用於藉由液晶分子之偏轉對所述入射光進行調制。本發明提供之光調制器,避免了該熱量對液晶層產生影響,破壞液晶性質,有利於提高光調制器之性能穩定性。 The present invention provides a light modulator, including: a first light modulation section, the first light modulation section including a first substrate and a first transparent conductive layer and a first thermally conductive layer disposed on the first substrate; a second A light modulation section is disposed opposite to the first light modulation section, and the second light modulation section includes a second substrate and a second transparent conductive layer and a second thermally conductive layer provided on the second substrate. The two heat-conducting layers and the first heat-conducting layer are used for extracting heat generated when incident light passes through the light modulator; and a liquid crystal layer, the liquid crystal layer is disposed on the first light modulation section and the second Between the light modulation sections, the incident light is modulated by the deflection of liquid crystal molecules. The light modulator provided by the invention avoids the influence of the heat on the liquid crystal layer, destroys the liquid crystal properties, and is beneficial to improving the performance stability of the light modulator.
Description
本發明涉及一種光調制器及使用其之雷射雷達。 The present invention relates to an optical modulator and a laser radar using the same.
雷射雷達已經成為無人駕駛不可或缺之關鍵傳感器。目前市面上可見之車載雷射雷達以機械式雷射雷達與固態雷射雷達為主,但均有光路調試困難、裝配複雜,生產週期長,成本居高等缺點。 Laser radar has become an indispensable key sensor for unmanned driving. At present, the vehicle-mounted laser radars on the market are mainly mechanical laser radars and solid-state laser radars, but they all have the disadvantages of difficult optical path debugging, complicated assembly, long production cycle and high cost.
是故,基於上述問題,目前新穎之固態雷射雷達多使用液晶光調制器對雷射雷達中之雷射光源發出之雷射進行調制。然,由於射入液晶光調制器之光為雷射,而該液晶光調制器中普遍於液晶層兩側配置氧化銦錫(Indium Tin Oxide,ITO)層,當液晶層被雷射照射時,會因ITO吸收雷射且玻璃散熱不良導致液晶層之局部區域熱量過高,損害液晶層中液晶分子之原有特性,從而對光調制器之功能產生影響。 Therefore, based on the above-mentioned problems, the current novel solid-state laser radars mostly use a liquid crystal light modulator to modulate the laser emitted by the laser light source in the laser radar. However, since the light incident on the liquid crystal light modulator is a laser, and in the liquid crystal light modulator, an indium tin oxide (ITO) layer is generally arranged on both sides of the liquid crystal layer. Due to the absorption of laser light by ITO and poor heat dissipation of the glass, the local area of the liquid crystal layer has excessively high heat, which damages the original characteristics of the liquid crystal molecules in the liquid crystal layer, thereby affecting the function of the light modulator.
本發明一方面提供一種光調制器,包括:第一光調制部,所述第一光調制部包括第一基板以及設置於所述第一基板上之第一透明導電層及第一導熱層;第二光調制部,與所述第一光調制部相對設置,所述第二光調制部包括第二基板以及設置於所述第二基板上之第二透明導電層及第二導熱層,所述第二導熱層及所述第一導熱層用於將入射光經過所述光調制器時所產生之熱量導出;以及液晶層,所述液晶層設置於所述第一光調制部及所述第二光調制部之間,用於藉由液晶分子之偏轉對所述入射光進行調制。 An aspect of the present invention provides a light modulator, including: a first light modulation section, the first light modulation section including a first substrate and a first transparent conductive layer and a first thermally conductive layer disposed on the first substrate; A second light modulation section is disposed opposite to the first light modulation section. The second light modulation section includes a second substrate and a second transparent conductive layer and a second thermally conductive layer provided on the second substrate. The second thermally conductive layer and the first thermally conductive layer are used to extract heat generated when incident light passes through the light modulator; and a liquid crystal layer, the liquid crystal layer is disposed on the first light modulation section and the Between the second light modulators, the incident light is modulated by the deflection of liquid crystal molecules.
本發明另一方面提供一種雷射雷達,包括:雷射光源,用於發出雷射;以及 光調制器,設置於所述雷射光源發出之雷射之出射路徑上,所述光調制器為如請求項1-8任意一項所述之光調制器。 Another aspect of the present invention provides a laser radar, comprising: a laser light source for emitting laser light; and An optical modulator is disposed on an emission path of the laser emitted from the laser light source, and the optical modulator is the optical modulator according to any one of claims 1-8.
本實施例提供之光調制器,其藉由第一透明導電層及第二透明導電層,將第一透明導電層及第二透明導電層吸收之雷射之熱量散發出去,避免了該熱量對液晶層產生影響,破壞液晶層中液晶分子之性質,有利於提高光調制器之性能穩定性。 The optical modulator provided in this embodiment uses the first transparent conductive layer and the second transparent conductive layer to radiate the heat of the laser absorbed by the first transparent conductive layer and the second transparent conductive layer, thereby avoiding the heat The liquid crystal layer affects and destroys the properties of liquid crystal molecules in the liquid crystal layer, which is beneficial to improving the performance stability of the light modulator.
100‧‧‧光調制器 100‧‧‧ light modulator
110‧‧‧第一光調制部 110‧‧‧First light modulation section
111‧‧‧第一基板 111‧‧‧first substrate
112‧‧‧第一透明導電層 112‧‧‧The first transparent conductive layer
113‧‧‧第一導熱層 113‧‧‧first thermally conductive layer
1131‧‧‧第一孔洞 1131‧‧‧First Hole
1132‧‧‧第一金屬層 1132‧‧‧First metal layer
1133‧‧‧第一陽極氧化物層 1133‧‧‧The first anodic oxide layer
114‧‧‧第一定向膜 114‧‧‧first orientation film
120‧‧‧第二光調制部 120‧‧‧Second light modulation section
121‧‧‧第二基板 121‧‧‧ second substrate
122‧‧‧第二透明導電層 122‧‧‧Second transparent conductive layer
123‧‧‧第二導熱層 123‧‧‧second thermally conductive layer
1231‧‧‧第二孔洞 1231‧‧‧Second Hole
1232‧‧‧第二金屬層 1232‧‧‧Second metal layer
1233‧‧‧第二陽極氧化物層 1233‧‧‧Second anodic oxide layer
124‧‧‧第二定向膜 124‧‧‧Second orientation film
130‧‧‧液晶層 130‧‧‧LCD layer
200‧‧‧雷射雷達 200‧‧‧laser radar
210‧‧‧雷射光源 210‧‧‧laser light source
圖1為本發明實施例提供之光調制器之立體示意圖。 FIG. 1 is a schematic perspective view of a light modulator according to an embodiment of the present invention.
圖2為本發明實施例一提供之光調制器之剖面示意圖。 FIG. 2 is a schematic cross-sectional view of a light modulator provided in Embodiment 1 of the present invention.
圖3為本發明實施例提供之不同氧化電壓下第一孔洞及第二孔洞之狀態結構示意圖。 FIG. 3 is a schematic structural diagram of states of a first hole and a second hole under different oxidation voltages according to an embodiment of the present invention.
圖4為本發明實施例提供之不同電解液濃度下第一孔洞及第二孔洞之狀態結構示意圖。 FIG. 4 is a schematic structural diagram of states of a first hole and a second hole under different electrolyte concentrations provided by an embodiment of the present invention.
圖5為本發明實施例提供之電流密度隨反應溫度變化之示意圖。 FIG. 5 is a schematic diagram of a change in current density with a reaction temperature according to an embodiment of the present invention.
圖6為本發明實施例二提供之光調制器之剖面結構示意圖。 FIG. 6 is a schematic cross-sectional structure diagram of an optical modulator provided in Embodiment 2 of the present invention.
圖7為本發明實施例提供之雷射雷達之模塊示意圖。 FIG. 7 is a schematic diagram of a laser radar module according to an embodiment of the present invention.
實施例一 Example one
請參考圖1,本實施例提供之光調制器100,包括第一光調制部110、第二光調制部120及液晶層130。其中,第一光調制部110及第二光調制部120相對設置,該液晶層130設置於第一光調制部110及第二光調制部120之間。 Please refer to FIG. 1, a light modulator 100 provided in this embodiment includes a first light modulation section 110, a second light modulation section 120, and a liquid crystal layer 130. The first light modulation section 110 and the second light modulation section 120 are oppositely disposed, and the liquid crystal layer 130 is disposed between the first light modulation section 110 and the second light modulation section 120.
如圖2所示,第一光調制部110包括第一基板111以及設置於第一基板111上之第一透明導電層112及第一導熱層113。 As shown in FIG. 2, the first light modulation section 110 includes a first substrate 111, a first transparent conductive layer 112 and a first thermally conductive layer 113 disposed on the first substrate 111.
第一透明導電層112由透明之導電材料形成,於一實施例中,第一透明導電層112為氧化銦錫(Indium Tin Oxide,ITO)。 The first transparent conductive layer 112 is formed of a transparent conductive material. In one embodiment, the first transparent conductive layer 112 is indium tin oxide (ITO).
如圖2所示,第一導熱層113包括第一金屬層1132及形成於第一金屬層1132上之第一陽極氧化物層1133。該第一陽極氧化物層1133由對金屬進行陽極氧化處理後形成。第一陽極氧化物層1133中形成有複數第一孔洞1131, 第一孔洞1131為金屬於陽極氧化之過程形成,其具體之形狀及孔徑與陽極氧化之工藝參數(例如氧化電壓、電解液濃度等)相關。第一孔洞1131使得第一陽極氧化物層1133具有較大之比表面積,故使得第一透明導電層112具有良好之散熱性能。所述金屬得為鋁,亦得為鋁合金、鎂鋁合金或者不銹鋼等得進行陽極氧化處理之金屬或合金。本實施例中,所述金屬為鋁,所述第一陽極氧化物層1133為鋁經陽極氧化處理後形成。 As shown in FIG. 2, the first thermally conductive layer 113 includes a first metal layer 1132 and a first anodic oxide layer 1133 formed on the first metal layer 1132. The first anodic oxide layer 1133 is formed by anodizing a metal. A plurality of first holes 1131 are formed in the first anodic oxide layer 1133. The first hole 1131 is formed by the metal during anodization, and its specific shape and pore size are related to the process parameters (such as oxidation voltage, electrolyte concentration, etc.) of the anodization. The first hole 1131 enables the first anodic oxide layer 1133 to have a larger specific surface area, so that the first transparent conductive layer 112 has good heat dissipation performance. The metal may be aluminum, or an aluminum, magnesium aluminum, or stainless steel may be anodized. In this embodiment, the metal is aluminum, and the first anodic oxide layer 1133 is formed by anodizing aluminum.
第一導熱層113形成於第一基板111之朝向第二光調制部120之表面上,第一透明導電層112直接形成於第一導熱層113遠離第一基板111之表面上,第一導熱層113之第一陽極氧化物層1133與第一透明導電層112直接接觸,以將第一透明導電層112上之熱量導出。 The first thermally conductive layer 113 is formed on the surface of the first substrate 111 facing the second light modulation part 120, and the first transparent conductive layer 112 is directly formed on the surface of the first thermally conductive layer 113 away from the first substrate 111. The first thermally conductive layer The first anodic oxide layer 1133 of 113 is in direct contact with the first transparent conductive layer 112 to discharge the heat on the first transparent conductive layer 112.
請繼續參考圖2,第二光調制部120包括第二基板121以及設置於第二基板121上之第二透明導電層122及第二導熱層123。 Please continue to refer to FIG. 2, the second light modulation unit 120 includes a second substrate 121, and a second transparent conductive layer 122 and a second thermally conductive layer 123 disposed on the second substrate 121.
第二透明導電層122由透明之導電材料形成,於一實施例中,第二透明導電層122為氧化銦錫(Indium Tin Oxide,ITO)。 The second transparent conductive layer 122 is formed of a transparent conductive material. In one embodiment, the second transparent conductive layer 122 is indium tin oxide (ITO).
如圖2所示,第二導熱層123包括第二金屬層1232及形成於第二金屬層1232上之第二陽極氧化物層1233。該第二陽極氧化物層1233由對金屬進行陽極氧化處理後形成。第二陽極氧化物層1233中形成有複數第二孔洞1231,第二孔洞1231為金屬於陽極氧化之過程形成,其具體之形狀及孔徑與陽極氧化之工藝參數(例如氧化電壓、電解液濃度等)相關。第二孔洞1231使得第二陽極氧化物層1233具有較大之比表面積,故使得第二透明導電層122具有良好之散熱性能。所述金屬得為鋁,亦得為鋁合金、鎂鋁合金或者不銹鋼等得進行陽極氧化處理之金屬或合金。本實施例中,所述金屬為鋁,所述第二陽極氧化物層1233為鋁經陽極氧化處理後形成。 As shown in FIG. 2, the second thermally conductive layer 123 includes a second metal layer 1232 and a second anodic oxide layer 1233 formed on the second metal layer 1232. The second anodic oxide layer 1233 is formed by anodizing a metal. A plurality of second holes 1231 are formed in the second anodic oxide layer 1233. The second holes 1231 are formed by the metal during anodization. The specific shape and pore diameter of the second anodic oxide layer 1231 and the anodic oxidation process parameters (such as oxidation voltage, electrolyte concentration, etc. ) Related. The second hole 1231 makes the second anodic oxide layer 1233 have a large specific surface area, so that the second transparent conductive layer 122 has good heat dissipation performance. The metal may be aluminum, or an aluminum, magnesium aluminum, or stainless steel may be anodized. In this embodiment, the metal is aluminum, and the second anodic oxide layer 1233 is formed by anodizing aluminum.
第二導熱層123形成於第二基板121之朝向第一光調制部110之表面上,第二透明導電層122直接形成於第二導熱層123遠離第二基板121之表面上,第二導熱層123之第二陽極氧化物層1233與第二透明導電層122直接接觸,以將第二透明導電層122上之熱量導出。 The second thermally conductive layer 123 is formed on the surface of the second substrate 121 facing the first light modulation part 110, and the second transparent conductive layer 122 is directly formed on the surface of the second thermally conductive layer 123 away from the second substrate 121. The second thermally conductive layer The second anodic oxide layer 1233 of 123 is in direct contact with the second transparent conductive layer 122 to discharge the heat on the second transparent conductive layer 122.
於其他實施例中,當形成第一導熱層113之金屬於陽極氧化處理時被全部氧化,此時,第一導熱層113不包括第一金屬層1132,僅包括第一陽極氧化物層1133。同樣之,當形成第二導熱層123之金屬於陽極氧化處理時被全 部氧化,此時,第二導熱層123不包括第二金屬層1232,僅包括第二陽極氧化物層1233。 In other embodiments, the metal forming the first thermally conductive layer 113 is completely oxidized during the anodizing process. At this time, the first thermally conductive layer 113 does not include the first metal layer 1132 and only includes the first anodic oxide layer 1133. Similarly, when the metal forming the second thermally conductive layer 123 is completely anodized, Partial oxidation. At this time, the second thermally conductive layer 123 does not include the second metal layer 1232, and only includes the second anodic oxide layer 1233.
請參考圖2,於一實施例中,光調制器100還包括設置於第一透明導電層112及液晶層130之間之第一定向膜114及設置於第二透明導電層122及液晶層130之間第二定向膜124,第一定向膜114及第二定向膜124用於為液晶層130中之液晶分子定位一初始方向。 Please refer to FIG. 2. In an embodiment, the light modulator 100 further includes a first alignment film 114 disposed between the first transparent conductive layer 112 and the liquid crystal layer 130, and a second transparent conductive layer 122 and the liquid crystal layer. The second alignment film 124, the first alignment film 114 and the second alignment film 124 are positioned between 130 to position an initial direction for the liquid crystal molecules in the liquid crystal layer 130.
其中,第一定向膜114及第二定向膜124中摻雜有導熱粒子,於一實施例中,導熱粒子得為AlN(氮化鋁)、Graphene、BN等,則摻雜導熱粒子之後之第一定向膜114及第二定向膜124進一步提高了光調制器100之散熱性能。 The first alignment film 114 and the second alignment film 124 are doped with thermally conductive particles. In one embodiment, the thermally conductive particles are AlN (aluminum nitride), Graphene, BN, etc. The first alignment film 114 and the second alignment film 124 further improve the heat dissipation performance of the light modulator 100.
可參考圖3~圖5,於一實施例中,可藉由調節對金屬鋁之氧化電壓、電解液濃度及反應溫度等條件來調節第一孔洞1131及第二孔洞1231之深度及直徑,其中,反應溫度主要為影響氧化過程中之電流密度。 Referring to FIG. 3 to FIG. 5, in one embodiment, the depth and diameter of the first hole 1131 and the second hole 1231 can be adjusted by adjusting conditions such as the oxidation voltage of metal aluminum, the electrolyte concentration, and the reaction temperature. The reaction temperature mainly affects the current density in the oxidation process.
圖3中為不同氧化電壓下形成之第一孔洞1131及第二孔洞1231之形態,其中,圖a、b、c、d中分別為電壓為20V、30V、40V、50V時形成之第一孔洞1131及第二孔洞1231之狀態。 Fig. 3 shows the shapes of the first holes 1131 and the second holes 1231 formed under different oxidation voltages. Among them, the first holes formed when the voltages are 20V, 30V, 40V, and 50V are shown in Figs. A, b, c, and d, respectively. 1131 and the state of the second hole 1231.
圖4中為不同之電解液濃度下形成之第一孔洞1131及第二孔洞1231之形態,其中,圖a、b、c中所示分別為0.3摩爾每升、0.5莫爾毎升、及1莫爾毎升之草酸濃度時形成之第一孔洞1131及第二孔洞1231之狀態。 Fig. 4 shows the shapes of the first holes 1131 and the second holes 1231 formed at different electrolyte concentrations. Among them, the figures shown in Figs. A, b, and c are 0.3 mol per liter, 0.5 mol per liter, and 1 The state of the first pores 1131 and the second pores 1231 formed when the oxalic acid concentration of Moore rises.
圖5中為電流密度隨著反應溫度之變化趨勢,其中橫坐標為反應溫度,縱坐標為電流密度,可見,當反應溫度於15~50℃之間時,電流密度隨著反應溫度之升高而變大。 Figure 5 shows the change in current density with reaction temperature. The abscissa is the reaction temperature and the ordinate is the current density. It can be seen that when the reaction temperature is between 15 and 50 ° C, the current density increases with the reaction temperature. And get bigger.
本實施例中之光調制器100用於對入射光進行調制,該入射光從第一光調制部110入射,並從第二光調制部120出射。當第一導電層112及第二導電層122未被施加電壓時,液晶層130中之液晶分子位於初始方向,該初始方向藉由第一定向膜114及第二定向膜124之設置來確定。當第一導電層112及第二導電層122被施加電壓時,液晶層130中之液晶分子發生偏轉,則入射光經過液晶層130,從第二光調制部120出射時,其相位會發生變化,上述過程即完成了對入射光之調制。 The optical modulator 100 in this embodiment is configured to modulate incident light. The incident light is incident from the first light modulation part 110 and emitted from the second light modulation part 120. When no voltage is applied to the first conductive layer 112 and the second conductive layer 122, the liquid crystal molecules in the liquid crystal layer 130 are located in an initial direction, and the initial direction is determined by the arrangement of the first alignment film 114 and the second alignment film 124. . When a voltage is applied to the first conductive layer 112 and the second conductive layer 122, the liquid crystal molecules in the liquid crystal layer 130 are deflected. When the incident light passes through the liquid crystal layer 130 and exits from the second light modulation section 120, its phase changes. The above process completes the modulation of the incident light.
本實施例提供之光調制器100,其藉由第一透明導電層112及第二透明導電層122,將第一透明導電層112及第二透明導電層122吸收之雷射之熱量散發出去,避免了該熱量對液晶層130產生影響,破壞液晶層130中液晶分子之性質,有利於提高光調制器100之性能穩定性。 The optical modulator 100 provided in this embodiment emits the heat of the laser absorbed by the first transparent conductive layer 112 and the second transparent conductive layer 122 through the first transparent conductive layer 112 and the second transparent conductive layer 122. The influence of the heat on the liquid crystal layer 130 is avoided, the properties of the liquid crystal molecules in the liquid crystal layer 130 are destroyed, and the performance stability of the light modulator 100 is improved.
實施例二 Example two
如圖6所示為本實施例提供之光調制器100,於本實施例中,只對與實施例一中之區別部分進行詳細描述,其他便不再贅述。 As shown in FIG. 6, the optical modulator 100 provided in this embodiment is described in this embodiment. Only the differences from the first embodiment will be described in detail, and the others will not be repeated.
本實施例中之光調制器100,第一透明導電層112形成於第一基板111朝向第二光調制部120之表面,第一導熱層113直接形成於第一透明導電層112遠離第一基板111之表面,第一金屬層1132與第一透明導電112層直接接觸。 In the optical modulator 100 in this embodiment, a first transparent conductive layer 112 is formed on a surface of the first substrate 111 facing the second light modulation part 120, and a first thermal conductive layer 113 is formed directly on the first transparent conductive layer 112 away from the first substrate. On the surface of 111, the first metal layer 1132 is in direct contact with the first transparent conductive 112 layer.
第二透明導電層122形成於第二基板121朝向第一光調制部110之表面,第二導熱層123直接形成於第二透明導電層122遠離第二基板121之表面,第二金屬層1232與第二透明導電層122直接接觸。 The second transparent conductive layer 122 is formed on the surface of the second substrate 121 facing the first light modulation part 110. The second thermal conductive layer 123 is directly formed on the surface of the second transparent conductive layer 122 away from the second substrate 121. The second metal layer 1232 and The second transparent conductive layer 122 is in direct contact.
第一定向膜114設置於第一透明導電層112及液晶層130之間,第二定向膜124設置於第二透明導電層122及液晶層130之間,第一定向膜114及第二定向膜124用於為液晶層130中之液晶分子定位一初始方向。 The first alignment film 114 is disposed between the first transparent conductive layer 112 and the liquid crystal layer 130, the second alignment film 124 is disposed between the second transparent conductive layer 122 and the liquid crystal layer 130, and the first alignment film 114 and the second The alignment film 124 is used to position an initial direction for the liquid crystal molecules in the liquid crystal layer 130.
對於光調制器100之工作原理,其與實施例一中相應之原理描述類似,此處便不再贅述。 The working principle of the optical modulator 100 is similar to the description of the corresponding principle in the first embodiment, and is not repeated here.
應當理解,本實施例中之光調制器100,得實現如實施例一中所述之所有有益效果。 It should be understood that the optical modulator 100 in this embodiment can achieve all the beneficial effects as described in the first embodiment.
請參考圖7,本實施例還提供一種雷射雷達200,該雷射雷達包括雷射光源210及光調制器100,該雷射光源210發出之雷射經過光調制器100進行調制,調制後之雷射出射至目標物體並反射回雷射雷達200,可實現對目標物體進行測距,本實施例中之光調制器如上述。本實施例提供之雷射雷達200,得實現上述之光調制器100之所有有益效果。 Please refer to FIG. 7, this embodiment also provides a laser radar 200. The laser radar includes a laser light source 210 and a light modulator 100. The laser emitted by the laser light source 210 is modulated by the light modulator 100. The laser is emitted to the target object and reflected back to the laser radar 200, so that the target object can be measured. The optical modulator in this embodiment is as described above. The laser radar 200 provided in this embodiment can achieve all the beneficial effects of the optical modulator 100 described above.
以上所述僅為本發明之實施方式,並非限制本發明之專利範圍,凡為利用本發明說明書及圖式內容所作之等效結構或等效流程變換,或直接或間接運用於其他相關之技術領域,均同理包括於本發明之專利保護範圍內。 The above is only an embodiment of the present invention, and does not limit the scope of the patent of the present invention. Any equivalent structure or equivalent process transformation made by using the description and drawings of the present invention, or directly or indirectly applied to other related technologies The fields are equally included in the patent protection scope of the present invention.
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| TW200834173A (en) * | 2007-02-14 | 2008-08-16 | Epson Imaging Devices Corp | Liquid crystal panel and projection type liquid crystal display device |
| US20090079922A1 (en) * | 2007-09-25 | 2009-03-26 | Seiko Epson Corporation | Electro-optical device and electronic apparatus including the same |
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| TW201115070A (en) * | 2011-01-13 | 2011-05-01 | yao-quan Wu | Heat dissipation substrate |
| WO2013035298A1 (en) * | 2011-09-08 | 2013-03-14 | シャープ株式会社 | Display device and method for manufacturing same |
| CN107688243A (en) * | 2017-10-20 | 2018-02-13 | 上海天马微电子有限公司 | Display device |
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| TW200834173A (en) * | 2007-02-14 | 2008-08-16 | Epson Imaging Devices Corp | Liquid crystal panel and projection type liquid crystal display device |
| US20090079922A1 (en) * | 2007-09-25 | 2009-03-26 | Seiko Epson Corporation | Electro-optical device and electronic apparatus including the same |
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