TWI668605B - Conductive pattern structure and the method manufacturing the same - Google Patents

Abstract

The invention discloses a conductive mesh pattern structure and a process thereof. The conductive wire pattern structure comprises a plurality of conductive mesh wires formed on a transparent substrate; a part of the conductive mesh wires is provided with a barrier pattern layer, and the barrier pattern layers have different heights. The barrier pattern layer is preferably formed by a nanoimprint process. The invention further discloses a manufacturing method of the conductive mesh pattern structure, which can obtain a nano-level line width and a low-light reflective conductive mesh.

Description

Conductive wire pattern structure and its process

The invention relates to a conductive wire pattern structure, in particular to a conductive wire pattern structure and a process method thereof for forming a photoresist having a different height using nanoimprint.

In the 1960s, Heilmeier et al. of Radio Corporation of America Corporation developed liquid crystal displays, creating a new era of digital display. Since liquid crystal displays have the advantages of being thin, portable, and low in power consumption, they are mass-produced together with the vigorous development of various types of digital electronic products. By the 1970s, people developed touch technology that could determine the position, allowing people to enter specific information by pressing the position. By alternately arranging two electric fields that are perpendicular to each other, the position of the touch can be recognized by the signal difference of the interlaced position during the touch sensing, thereby achieving the touch effect. Since then, with the advancement of display and touch technology, people have found that they can be combined with touch technology by virtue of the thin and light features of liquid crystal displays; especially in 1994, when the International Business Machines Corporation published The touch-screen display mobile phone further drives the development of touch-enabled display panels in various portable electronic products.

However, in the touch display screen of the prior art, the opaque electrode used in the display module or the touch panel (TP) will affect the aperture ratio of the overall transparent light to achieve the desired illumination. The power is difficult to reduce; and the wire diameter of the electrode is related to the Lithography process for semiconductor manufacturing. Due to wire diameter The smaller the width, the higher the precision of the exposure light source and the device such as the mold, so the higher the production equipment and the cost, and the higher the precision, the higher the cost step distance, which is necessary for the manufacturer of the touch display screen. Take a balance between aperture ratio and manufacturing cost. On the other hand, the material of the opaque electrode is generally composed of a metal material, which has a considerable degree of reflectivity for natural light, especially when the wire diameter is not sufficiently small and/or is used at a large angle of view, which is easy to use. When the touch display screen is illuminated by the opaque electrode, the viewing and touch operation comfort is affected. In recent years, metal mesh (Metal mesh) has been widely used in the touch structure of a large-sized touch panel because of its advantages of easy production.

According to the disclosed patent TW201712506A, a touch sensor with a circular polarizing plate and an image display device using the same have two layers of high-bend electrodes, and the effect of suppressing the pattern is good, and the haze is further small. In the visual recognition side of the capacitive touch sensor, a touch sensor with a circular polarizer and a circular polarizer is disposed, and electrodes of different materials are combined, that is, the first electrode of the touch sensor is made of a metal mesh The second electrode comprises a conductive nanowire.

The disclosed patent CN105446555A discloses a touch panel which adopts a nano silver wire conductive laminated structure, the nano silver wire conductive laminated structure comprises a substrate, a nano silver wire conductive electrode layer, disposed above the substrate, and a sticky Sexual protective layer. The adhesive protective layer is disposed on the nano silver wire conductive electrode layer, and comprises a transparent adhesive material and a transparent dielectric material. The touch panel using the nano silver wire conductive laminated structure is more suitable for the current demand for lighter and thinner products, and the manufacturing method thereof is also very simplified.

The disclosed patent CN105224151A discloses a nano silver wire conductive laminated structure comprising a substrate and a nano silver wire conductive electrode layer, wherein the nano silver wire conductive electrode layer is disposed on the substrate, including a substrate, a dark conductive medium and a nanometer. Silver line. When a nano silver wire is used as the conductive material, in order to reduce the haze, the number of nano silver wires per unit area is often reduced, which causes a problem of poor electrical conductivity. The invention provides a nano silver wire conductive laminated structure, such that conductivity is not affected by a decrease in the number of nano silver wires, and the invention also provides a conductive laminated structure using the nano silver wire Capacitive touch panel.

The open patent CN105204694A discloses a nano silver line touch panel. The nano silver line touch panel comprises a nano silver wire conductive electrode layer having a thickness of 100 nm to 200 nm, and the nano silver wire conductive electrode layer comprises a nano silver wire and a substrate, wherein the nano silver wire is at least partially embedded A substrate, and a quarter-wave retarder, are disposed above the nanowire conductive electrode layer. When the nano silver wire is used as the conductive material of the touch panel, the surface of the nano silver wire has high reflectivity, and the surface diffusion causes haze.

However, the above technologies are in mass production, but there are many problems that need to be overcome. (1) To make the metal lines visually invisible, the metal line width may have to be less than 5um, requiring high-precision equipment; (2) in order to reach the user Accepting 98% transmittance, the sensing area is reduced by 98%, and the relative touch sensing amount may be reduced by 50 times; (3) The spacing of the metal grid is too large, and the mutual capacitance is too small to be less than the sensing signal. .

In view of the above problems, it is necessary to propose a conductive mesh pattern structure having a very narrow line width and reducing light reflectivity and a manufacturing method thereof.

In view of the above-mentioned drawbacks of the prior art, the main object of the present invention is to provide a conductive wire pattern structure having a very narrow line width and reduced light reflectivity. It leaves high and low photoresist through nano-imprinting, in addition to the wire diameter of the nano-scale conductive wire, and the photoresist left behind after etching has the function of preventing natural light from being reflected in the human eye. It can achieve both low cost and high production quality, and enhance the comfort of use.

The main object of the present invention is to provide a method for fabricating a conductive wire pattern structure having a very narrow line width and reducing light reflectivity, which is obtained by the manufacturing method of the nanoimprint resist, and has the same wire diameter width as the high-cost production quality. And it has the function of preventing reflection of natural light in the human eye, so as to achieve both low cost and high production quality, and to enhance the comfort of use.

In order to achieve the main object of the present invention, the present invention provides a conductive wire pattern structure, comprising: a plurality of conductive mesh wires formed on a transparent substrate; wherein a portion of the conductive mesh wires are provided with a barrier pattern The layers of the barrier pattern have different heights.

According to a feature of the invention, the material of the conductive mesh is selected from the group consisting of metal, metal oxide, and carbon-based materials.

According to a feature of the invention, the conductive network has a line width of between 10 nanometers and 100 micrometers, and the conductive mesh has a distance of between 10 nanometers and 100 micrometers.

According to a feature of the invention, the barrier pattern layer is formed by a nanoimprint process.

In order to achieve another object of the present invention, the present invention provides a method for fabricating a conductive wire pattern structure, comprising the following steps: Step 1: forming a conductive layer on a transparent substrate; Step 2: forming a barrier pattern layer on Step 3: etching the conductive layer not covered by the barrier pattern layer to form a conductive pattern; and step 4; partially removing the barrier pattern layer. Wherein, in step 4, a part of the conductive pattern still has the barrier pattern layer, and part of the conductive pattern completely removes the barrier pattern layer to form a connection region.

According to a feature of the invention, in accordance with a feature of the invention, in step two, the residual material between the barrier pattern layers is further removed.

According to a feature of the invention, in the second step, the barrier pattern layer is formed on the conductive layer by a nanoimprint process.

According to a feature of the invention, in step two, the barrier pattern layers formed on the conductive layer have different heights.

According to a feature of the invention, in the second step, the barrier pattern layer formed on the conductive layer has a different height by a nanoimprint process.

The conductive mesh pattern structure of the present invention has the following effects:

1. Through the nanoimprint technology, the wire diameter of the conductive wire which is the same as the high-cost production quality can be obtained.

2. Part of the barrier pattern layer left after etching has the function of preventing reflection of natural light in the human eye, so as to achieve both low cost and high production quality, and to enhance the comfort of use.

3. It can provide conductive wire pattern structure with extremely narrow line width and reduced light reflectivity, which can be applied to extremely sensitive fingerprint identification.

4. It can be applied to different conductive materials and different resolutions to improve the application of the product.

100‧‧‧Conductive wire pattern structure

110‧‧‧Transparent substrate

120‧‧‧ Conductive layer

122‧‧‧Conductive cable

124‧‧‧Connected area

132‧‧‧Barrier pattern layer

134‧‧‧Barrier pattern layer

136‧‧‧Residual materials

The above and other objects, features, and advantages of the present invention will become more apparent and understood.

BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a schematic view showing a structure of a conductive mesh pattern of the present invention.

2 is a schematic view showing a process method of a conductive mesh pattern structure of the present invention.

FIG. 3 is a schematic view showing a process flow chart of a conductive wire pattern of the present invention.

4 is a schematic view showing the implementation of a conductive wire pattern structure to which the present invention is applied.

While the invention may be embodied in a variety of forms, the embodiments shown in the drawings and illustrated herein are the preferred embodiments of the invention. Those skilled in the art will understand that this article The apparatus and methods that are specifically described and illustrated in the drawings are considered as an example of the invention, non-limiting exemplary embodiments, and the scope of the invention is defined only by the scope of the claims. Features illustrated or described in connection with an exemplary embodiment may be combined with features of other embodiments. Such modifications and variations are intended to be included within the scope of the invention.

Please refer to FIG. 1 , which shows a schematic diagram of the conductive mesh pattern structure 100 of the present invention. The conductive mesh pattern structure 100 of the present invention comprises: a plurality of conductive mesh wires 122 formed on a transparent substrate 110. A portion of the conductive mesh wires 122 is provided with a corresponding barrier pattern layer 132. The main feature is that the barrier pattern layer 132 may have different heights or may have the same height. That is, the barrier pattern layer 132 has a height difference. On the transparent substrate 110, a portion of the conductive pattern, such as a conductive pattern in FIG. 1, is completely removed from the barrier pattern layer. Therefore, the conductive pattern completely removing the barrier pattern layer can serve as a connection region 124. The connection region 124 serves as a contact for electrical connection of the conductive mesh pattern structure 100 with other components, or a solder joint for mechanical connection.

The transparent substrate 110 is selected from one of a soft transparent substrate, sapphire, transparent quartz or glass. The flexible transparent substrate comprises an organic polymer, such as polyethylene terephthalate (PET), polycarbonate (Polycarbonate, PC), polymethylmethacrylate (PMMA), polyvinyl ketal Polyvinyl Butyral (PVB), Tri-cellulose Acetate (TCA), Cyclo Olefin Copolymer (COC), Polyimide (PI), and the like. The main feature of the transparent substrate 110 is that the light transmittance in visible light can reach 80% or more.

The material of the conductive mesh 122 is selected from one of the group consisting of metal, metal oxide, and carbon-based materials. Metals such as silver, copper, aluminum, iron, magnesium, tin, nickel, gold, cobalt, titanium, molybdenum, niobium and alloys thereof. The metal oxide is particularly a transparent conductive metal oxide such as fluorine-doped tin oxide (Sn ₂ O ₃ :F, FTO), tin-doped indium oxide (In ₂ O ₃ :Sn, ITO), doping Indium oxide of zinc (In ₂ O ₃ : Zn), boron-doped indium oxide (In ₂ O ₃ : B), hydrogen-doped indium oxide (In ₂ O ₃ : H), aluminum-doped zinc oxide ( ZnO: Al, AZO), gallium-doped zinc oxide (ZnO: Ga, GZO), boron-doped zinc oxide (ZnO: B, BZO) or one of its compositions. The carbon-based material comprises: a transparent carbon nanomaterial, such as a material obtained by combining fullerenes, carbon nanotubes and graphene. Preferably, in the present invention, the material of the conductive mesh 120 is one selected from the group consisting of silver, aluminum or copper, and more preferably, the conductive mesh 120 is a metallic silver wire.

As shown in FIG. 1, the conductive network line 122 has a line width of between 10 nm and 100 microns. Preferably, the conductive mesh 122 has a line width of between 100 nm and 5 microns. The conductive mesh lines 122 are between 10 nm and 100 microns apart. Preferably, the distance between the conductive mesh wires 122 is between 100 nm and 5 microns.

The barrier pattern layer 132 disposed on a portion of the conductive mesh is formed by a nanoimprint process. As the material of the barrier pattern layer 132, an ultraviolet (UV) curable material, a thermosetting material, a photoresist material, or the like can be used. The ultraviolet (UV) curable material is, for example, an ultraviolet (UV) curable resin; the thermosetting material is, for example, a thermosetting plastic; and the photoresist material includes a positive resist and a negative photoresist. The positive photoresist resists the portion of the light that is dissolved in the photoresist developer, while the portion that is not illuminated is not soluble in the photoresist developer. Conversely, the portion of the negative photoresist that is illuminated to the light is not soluble in the photoresist developer, and the portion that is not illuminated is soluble in the photoresist developer. For example, an array photo resistor (APR) is a positive photoresist, and a color filter (CR) is a negative photoresist. The material of the barrier pattern layer 132 may use a thin film photoresist material or a thick film photoresist material. Preferably, the material of the barrier pattern layer 132 uses a thick film photoresist material.

Please also refer to FIG. 2, which illustrates a schematic diagram of a method of fabricating a conductive mesh pattern structure of the present invention. The method for manufacturing the conductive mesh pattern structure 100 of the present invention comprises the following steps: Step 1: forming a conductive layer on a transparent substrate; Step 2: forming a barrier pattern layer on the conductive layer; Step 3: etching the conductive layer not covered by the barrier pattern layer to form a conductive mesh line; Step 4: partially removing the barrier pattern layer; wherein, in step 4, part of the conductive network line still has the resistance The barrier pattern layer, part of the conductive mesh line completely removes the barrier pattern layer to form a connection region.

Referring now to FIG. 3, a schematic diagram of a conductive network pattern structure of the present invention in a process flow is shown.

In the first step, as shown in FIG. 3(a), the method of forming a conductive layer 120 on a transparent substrate 110 comprises: a wet deposition process or a dry deposition process. The wet deposition process includes, but is not limited to, sol-gel, metal organic deposition or spray pyrolysis. The sol-gel method is a low-temperature chemical synthesis method for producing metal oxides and nanomaterials by conversion of a liquid phase (sol) to a solid phase (gel) of a system. It coats the sol-gel solution on the transparent substrate 110, and the conductive layer 120 is produced by a hydrolysis and condensation reaction of the sol-gel solution by providing heat energy or light. The organometallic cleavage method is performed by coating metal precursors in a solution on the transparent substrate 110, and the organic metal solution is caused to generate organic radicals by providing thermal energy or light to reduce the conductive layer 120. Spray pyrolysis method, preparing a precursor solution of the conductive layer 120 material, forming a fine droplet through the ultrasonic droplet generator to form fine droplets sprayed on the transparent substrate 110, by providing heat energy or light energy, so that the precursor solution The conductive layer 120 can be obtained after solvent evaporation, solute supersaturation, pyrolysis and oxidation.

The dry deposition process typically includes a physical vapor deposition (PVD) process or a chemical vapor deposition (CVD) process. The physical vapor deposition process includes, but is not limited to, thermal evaporation, electron beam evaporation, ion beam evaporation, anode arc evaporation, cathodic arc evaporation, DC sputtering, RF sputtering, magnetron sputtering, reactive sputtering plating , ion beam sputtering and ion plating processes. The chemical vapor deposition process includes, but is not limited to, atmospheric pressure chemical vapor deposition, low temperature chemical vapor deposition, plasma enhanced chemical vapor deposition, microwave plasma chemical vapor deposition, and the like. The conductive layer 120 having a controllable thickness can be formed on the transparent substrate 110 by a dry deposition process. The adjustment of the thickness of the conductive layer 120 is controlled by a deposition time in a physical vapor deposition process or a chemical vapor deposition process. Generally, a longer deposition time results in a thicker thickness of the conductive layer 120. Conversely, a shorter deposition time results in a relatively thinner thickness of the conductive layer 120. In one embodiment, the conductive layer 120 is preferably formed by a splash process.

In step 2, as shown in FIG. 3(b), the barrier pattern layers 132, 134 are formed on the conductive layer 120 by a nano imprint process. Nano imprint technology is based on thermoplastic molding technology, through the softening state (higher than glass transition temperature) of polymer materials, such as ultraviolet (UV) curable materials, thermosetting materials, photoresist materials, etc., through pre-prepared The mold is embossed with appropriate pressure and temperature. The use of hot press forming technology to fabricate structural components, the most obvious process characteristics are the need to wait for the process temperature rise, cooling and pressure holding process during pressure molding. The time loss of the hot press process will be determined by several factors: temperature (including heating and cooling), pressure and mold geometry. An important feature of the present invention is that in step 2, the barrier pattern layers 132, 134 formed on the conductive layer 120 have different heights, as shown in FIG. 3(b), thereby forming the barrier pattern having a height difference. The structure of layers 132, 134. Preferably, in step 2, the barrier pattern layers 132, 134 formed on the conductive layer 120 have different heights by the nanoimprint process, and thus the barrier pattern layers 132, 134 have a height difference. For example, in the barrier pattern layers 132, 134, the barrier pattern layer 132 has a higher height, and the barrier pattern layer 134 has a lower height.

Note that since the material of the barrier pattern layers 132, 134 is highly fluid, there may be residual material 136 between the barrier pattern layers 132, 134 as shown in FIG. 3(b). Therefore, in step two, the residual between the barrier pattern layers 132, 134 is further removed. The material 136 is such that the subsequent etching process can accurately remove the unnecessary conductive layer material to obtain the conductive mesh pattern structure 100 of the present invention. The residual material between the barrier pattern layers may be removed using wet etching or dry etching. In one embodiment, the process of removing the residual material 136 between the barrier pattern layers is performed by a dry etch process, particularly an oxygen plasma ashing process.

When a suitable nanoimprint process is employed, there is no residual material 136 between the barrier pattern layers, as shown in Figure 3(c), that is, without the need to remove the residual material 136 between the barrier pattern layers. .

In the third step, as shown in FIG. 3(d), the etching may be a wet etching process or a dry etching process. The wet etching process has the advantage of being fast and low-cost, and the line width is 0.5 micron or more, and a wet etching process can be employed. The dry etching process has the advantage of high resolution, and the line width is a process of nanometer or higher, and a dry etching process can be used. Since the barrier pattern layers 132, 134 formed on the conductive layer 120 in the second step are formed to have different heights. During the third step, since the etching has material selectivity, the barrier pattern layers 132, 134 are still slightly etched, resulting in a decrease in the height of the barrier pattern layers 132, 134.

In step four, in conjunction with FIG. 3(e), the barrier pattern layer is partially removed to obtain a connection region 124. It should be noted that the barrier pattern layers 132, 134 are structures having different heights, that is, having a height difference. For example, the height of the barrier pattern layer 134 on the connection region 124 is lower than the height of the barrier pattern layer 132 on the conductive pattern 122. Therefore, when the partial removal of the barrier pattern layer is performed, a portion of the conductive pattern 122 still has the barrier pattern layer 132, and a portion of the conductive pattern 122 completely removes the barrier pattern layer 134 to form the connection. Area 124. In an embodiment, the photoresist of the barrier pattern layer 134 may be removed using a wet etching process or a dry etching process. In one embodiment, the process of removing the photoresist of the barrier pattern layer 134 is performed by a dry etching process, particularly an oxygen plasma ashing process.

After step four, a step five is further included, that is, the process of cutting and connecting the transparent substrate 110 and the structure thereon. The connection region 124 can serve as a contact or solder joint for the connection signal.

It should be noted that, in step 4, part of the conductive pattern 122 still has the barrier pattern layer, but in the oxygen plasma ashing process for removing part of the barrier pattern layer, the remaining barrier pattern layer will There is a blackening effect. Therefore, the light reflection on the conductive pattern 122 is reduced, thereby reducing the haze and preventing the reflection of natural light from being reflected to the human eye, thereby achieving low cost and high production quality, and improving the comfort of use. The purpose of the degree.

The conductive mesh pattern structure 100 according to the present invention can be applied to touch sensing, Wire Grid Polarizer (WGP) or Fingerprint Identification. The metal wire grid polarizer can use the conductive mesh pattern structure 100 of the present invention having a high extinction coefficient. At present, the wire grid is made of aluminum as the main metal material. When the grating size is smaller than the operating wavelength, after the light wave passes through such a structure, the periodic parameters and the geometric shape of the grating will exhibit a specific birefringence characteristic to the light wave, so that the vibration component of the incident electric field perpendicular to the structure is not affected by the grating parameter. However, the electric field vibration component parallel to the structure exhibits strong reflection characteristics due to destructive interference. Fingerprint recognition reads the extremely fine features of the fingerprint and uses capacitive touch technology for analysis. In the present invention, when the user puts a finger on the conductive mesh pattern structure 100 of the present invention, it extracts a high-resolution fingerprint image of the dermis layer below the skin layer, and measures the ridge line and the electrical potential difference. The difference between the valleys.

Referring to FIG. 4, there is illustrated a schematic diagram of an implementation of a conductive mesh pattern structure to which the present invention is applied. In an embodiment of a conductive wire pattern structure application, a sensing structure 200 includes two conductive mesh pattern structures 100 and an insulating material layer 220. The upper and lower conductive mesh pattern structures 100 are opposed to each other with the insulating material layer 220 interposed therebetween. The conductive patterns of the upper and lower conductive mesh pattern structures 100 are opposed to each other in a vertical manner. The material of the insulating material layer 220 in the middle may be cerium oxide, cerium nitride, or cerium oxynitride or the like. Preferably, the layer of insulating material 220 is a quarter-wave filter, or a retardation, which allows The optical path has a phase difference of 90 degrees, so that the incident light is no longer reflected back by the conductive pattern 122, further reducing the haze, preventing the reflection of natural light on the function of the human eye, and improving the comfort of use.

In summary, the conductive mesh pattern structure of the present invention has the following effects:

1. Through the nanoimprint technology, the wire diameter of the conductive wire which is the same as the high-cost production quality can be obtained.

2. Part of the barrier pattern layer left after etching has the function of preventing reflection of natural light in the human eye, so as to achieve both low cost and high production quality, and to enhance the comfort of use.

3. It can provide conductive wire pattern structure with extremely narrow line width and reduced light reflectivity, which can be applied to extremely sensitive fingerprint identification.

4. It can be applied to different conductive materials and different resolutions to improve the application of the product.

While the present invention has been described in its preferred embodiments, it is not intended to limit the scope of the invention, and various modifications and changes can be made without departing from the spirit and scope of the invention. As explained above, various modifications and variations can be made without departing from the spirit of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims.

Claims (14)

An electrically conductive mesh pattern structure comprising: a plurality of conductive mesh wires formed on a transparent substrate; wherein a portion of the conductive mesh wires are provided with barrier pattern layers having different heights, the barrier pattern The layer is provided on the conductive mesh by a nanoimprint process and formed by a dry etching process to form different heights. The conductive mesh pattern structure of claim 1, wherein the transparent substrate is selected from one of a soft transparent substrate or a glass. The conductive mesh pattern structure of claim 1, wherein the material of the conductive mesh is selected from the group consisting of metal, metal oxide, and carbon-based materials. The conductive mesh pattern structure of claim 1, wherein the conductive mesh has a line width of between 10 nm and 100 μm. The conductive mesh pattern structure of claim 1, wherein the conductive mesh has a distance of between 10 nm and 100 μm. The conductive mesh pattern structure of claim 1, wherein the conductive mesh material is selected from the group consisting of silver, copper, aluminum, iron, magnesium, tin, nickel, gold, cobalt, titanium, molybdenum, niobium and alloys thereof. One of the ethnic groups. The conductive mesh pattern structure of claim 1, wherein the conductive mesh material is a graphene material. The conductive mesh pattern structure of claim 1, wherein the barrier pattern layer has a blackening effect. A method for manufacturing a conductive wire pattern structure comprises the following steps: Step 1: forming a conductive layer on a transparent substrate; Step 2: forming a barrier pattern layer having different heights by a nanoimprint process Above the conductive layer; Step 3: etching the conductive layer to form a conductive mesh line; Step 4: partially removing the barrier pattern layer by a dry etching process; wherein, in step 4, a portion of the conductive mesh line still has the barrier pattern layer, The barrier pattern layer has a blackening effect, and part of the conductive pattern completely removes the barrier pattern layer to form a connection region. The method for manufacturing a conductive mesh pattern structure according to claim 9, wherein in the second step, the residual material between the barrier pattern layers is further removed. The method of fabricating a conductive mesh pattern according to claim 9, wherein the material of the conductive mesh is selected from the group consisting of metal, metal oxide, and carbon-based materials. The method of fabricating a conductive mesh pattern according to claim 9, wherein the conductive network has a line width of between 10 nm and 100 μm. The method of fabricating a conductive wire pattern structure according to claim 9, wherein the distance between the conductive wires is between 10 nm and 100 μm. The method of fabricating a conductive wire pattern structure according to claim 9, wherein in the fourth step, the dry etching process is an oxygen plasma ashing process.