TWI667362B - Sputtering target - Google Patents
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- TWI667362B TWI667362B TW107103963A TW107103963A TWI667362B TW I667362 B TWI667362 B TW I667362B TW 107103963 A TW107103963 A TW 107103963A TW 107103963 A TW107103963 A TW 107103963A TW I667362 B TWI667362 B TW I667362B
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- fixing member
- sputtering target
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- 238000005477 sputtering target Methods 0.000 title claims abstract description 35
- 238000004544 sputter deposition Methods 0.000 claims abstract description 66
- 239000000463 material Substances 0.000 claims description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 239000000853 adhesive Substances 0.000 claims description 2
- 230000001070 adhesive effect Effects 0.000 claims description 2
- 230000000149 penetrating effect Effects 0.000 claims 1
- 238000000034 method Methods 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005304 joining Methods 0.000 description 3
- 239000013077 target material Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- Physical Vapour Deposition (AREA)
Abstract
濺射靶材包括背板、濺射板及固定件。背板包括相對的第一板表面與第二板表面,並包括從第一板表面延伸至第二板表面的穿孔。固定件位在穿孔中,並穿出第一板表面而至濺射板中。The sputtering target includes a back plate, a sputtering plate, and a fixing member. The back plate includes a first plate surface and a second plate surface opposite to each other, and includes perforations extending from the first plate surface to the second plate surface. The fixing member is located in the perforation and penetrates the surface of the first plate into the sputtering plate.
Description
本發明是有關於一種靶材結構,且特別是有關於用於濺鍍製程的濺射靶材。The present invention relates to a target structure, and more particularly to a sputtering target used in a sputtering process.
目前,濺鍍技術(sputtering)係為主要沉積鍍膜技術所使用的方式之一。濺鍍技術一般是在濺鍍腔室中形成電漿,電漿(plasma)會對金屬靶材進行離子轟擊(ion bombardment),使靶材的金屬原子撞擊出,而形成氣體分子發射到達所要沉積的基材上,氣體分子經過附著、吸附、表面遷徙、成核等濺鍍作用之後,最終在基材上形成具有金屬原子的金屬薄膜。濺鍍技術係廣泛地應用在工業生產和科學研究領域。然而,一般濺射靶材的不同組件的接合設計複雜,因此組裝費時且使用彈性小。At present, sputtering is one of the methods used for the main deposition coating technology. Sputtering technology generally forms a plasma in a sputtering chamber. The plasma performs ion bombardment on a metal target, causing the metal atoms of the target to strike out, and the gas molecules are emitted to reach the desired deposition. After the gas molecules are sputtered by adhesion, adsorption, surface migration, nucleation, etc. on the substrate, a metal film with metal atoms is finally formed on the substrate. Sputtering technology is widely used in the fields of industrial production and scientific research. However, the joint design of different components of a general sputtering target is complicated, and therefore it is time-consuming to assemble and less flexible to use.
本發明係有關於一種濺射靶材。The present invention relates to a sputtering target.
根據本發明之第一方面,提出一種濺射靶材,其包括背板、濺射板及固定件。背板包括相對的第一板表面與第二板表面,並包括從第一板表面延伸至第二板表面的穿孔。固定件位在穿孔中,並穿出第一板表面而至濺射板中。According to a first aspect of the present invention, a sputtering target is provided, which includes a back plate, a sputtering plate, and a fixing member. The back plate includes a first plate surface and a second plate surface opposite to each other, and includes perforations extending from the first plate surface to the second plate surface. The fixing member is located in the perforation and penetrates the surface of the first plate into the sputtering plate.
為了對本發明之上述及其他方面有更佳的瞭解,下文特舉實施例,並配合所附圖式詳細說明如下:In order to have a better understanding of the above and other aspects of the present invention, the following specific examples are described in detail below in conjunction with the accompanying drawings:
以下係以一些實施例做說明。須注意的是,本揭露並非顯示出所有可能的實施例,未於本揭露提出的其他實施態樣也可能可以應用。再者,圖式上的尺寸比例並非按照實際產品等比例繪製。因此,說明書和圖示內容僅作敘述實施例之用,而非作為限縮本揭露保護範圍之用。另外,實施例中之敘述,例如細部結構、製程步驟和材料應用等等,僅為舉例說明之用,並非對本揭露欲保護之範圍做限縮。實施例之步驟和結構各之細節可在不脫離本揭露之精神和範圍內根據實際應用製程之需要而加以變化與修飾。以下是以相同/類似的符號表示相同/類似的元件做說明。In the following, some examples are used for illustration. It should be noted that this disclosure does not show all possible embodiments, and other implementations not proposed in this disclosure may also be applicable. Moreover, the dimensional proportions in the drawings are not drawn according to the actual products. Therefore, the contents of the description and the drawings are only used to describe the embodiments, and not used to limit the scope of the disclosure. In addition, the descriptions in the embodiments, such as the detailed structure, process steps, and application of materials, are for illustration purposes only, and are not intended to limit the scope of the disclosure to be protected. The details of the steps and structures of the embodiments can be changed and modified according to the needs of the actual application process without departing from the spirit and scope of the present disclosure. The following uses the same / similar symbols to indicate the same / similar components for explanation.
第1圖至第4A圖繪示根據一實施例概念之濺射靶材402的製造方法。其中第1圖顯示濺射板104的立體透視圖。第2圖顯示背板206的立體透視圖。第3圖顯示利用固定件308接合濺射板104與背板206的示意圖。第4A圖顯示濺射靶材402的剖面圖。1 to 4A illustrate a method for manufacturing a sputtering target 402 according to an embodiment concept. FIG. 1 shows a perspective perspective view of the sputtering plate 104. FIG. 2 shows a perspective perspective view of the back plate 206. FIG. 3 is a schematic diagram of joining the sputtering plate 104 and the back plate 206 by using the fixing member 308. FIG. 4A shows a cross-sectional view of the sputtering target 402.
請參照第1圖、第3圖與第4A圖,濺射板104包括相對的濺射表面110與背表面112。濺射表面110為濺射靶材402放置在濺鍍腔室中時面向欲被沉積薄膜之基材的表面。濺射板104可包括濺射區114與邊緣區116。濺射區114可具有矩形的板形狀,邊緣區116可環繞濺射區114的四周圍,並可具有矩形的環形狀。濺射區114具有厚度T1,其大於邊緣區116的厚度T2。一實施例中,濺射區114可對應濺射靶材402設置在濺鍍腔室中進行製程時消耗速率較高的區域部分,邊緣區116為實質上不會被消耗的區域,因此,濺射區114具有較大的厚度表示可提供較多的濺射消耗量,可使濺射靶材402具有較長的使用壽命。Please refer to FIG. 1, FIG. 3, and FIG. 4A. The sputtering plate 104 includes opposite sputtering surfaces 110 and a back surface 112. The sputtering surface 110 is a surface facing the substrate to be deposited when the sputtering target 402 is placed in the sputtering chamber. The sputtering plate 104 may include a sputtering region 114 and an edge region 116. The sputtering region 114 may have a rectangular plate shape, and the edge region 116 may surround four sides of the sputtering region 114 and may have a rectangular ring shape. The sputtering region 114 has a thickness T1 that is greater than a thickness T2 of the edge region 116. In one embodiment, the sputtering region 114 may correspond to the sputtering target material 402 in the region of the region where the consumption rate is relatively high when the process is performed. The edge region 116 is a region that is not substantially consumed. Therefore, the sputtering region 114 The larger thickness of the shot region 114 indicates that it can provide a larger amount of sputtering consumption, and can make the sputtering target 402 have a longer service life.
濺射區114可包括凹洞118A,其沿濺射板104的厚度方向,從背表面112往濺射板104的內部凹入而具有一深度D1。凹洞118A的深度D1小於濺射區114的厚度T1,且深度D1小於邊緣區116的厚度T2。邊緣區116可包括凹洞118B,其沿濺射板104的厚度方向,從背表面112往濺射板104的內部凹入而具有一深度D2。深度D2可小於厚度T2。一實施例中,D1>D2。另一實施例中,D1=D2。又另一實施例中,D1<D2。The sputtering region 114 may include a recess 118A, which is recessed from the back surface 112 toward the inside of the sputtering plate 104 along the thickness direction of the sputtering plate 104 to have a depth D1. The depth D1 of the recess 118A is smaller than the thickness T1 of the sputtering region 114, and the depth D1 is smaller than the thickness T2 of the edge region 116. The edge region 116 may include a recess 118B, which is recessed from the back surface 112 toward the inside of the sputtering plate 104 along the thickness direction of the sputtering plate 104 to have a depth D2. The depth D2 may be smaller than the thickness T2. In one embodiment, D1> D2. In another embodiment, D1 = D2. In yet another embodiment, D1 <D2.
請參照第2圖、第3圖與第4A圖,背板206包括相對的第一板表面220與第二板表面222。背板206可包括穿孔224A與穿孔224B,皆沿背板206的厚度方向從第一板表面220延伸至第二板表面222。Referring to FIG. 2, FIG. 3 and FIG. 4A, the back plate 206 includes a first plate surface 220 and a second plate surface 222 opposite to each other. The back plate 206 may include perforations 224A and 224B, both extending from the first plate surface 220 to the second plate surface 222 along the thickness direction of the back plate 206.
請參照第3圖,將濺射板104的背表面112面向背板206的第一板表面220,並使濺射板104的凹洞118A與凹洞118B分別對齊背板206的穿孔224A與穿孔224B。固定件308從背板206的第二板表面222配置進入至背板206的穿孔224A、224B與濺射板104的凹洞118A、118B,並利用固定件308接合背板206與濺射板104,形成如第4A圖所示的濺射靶材402。Referring to FIG. 3, the back surface 112 of the sputtering plate 104 faces the first plate surface 220 of the back plate 206, and the holes 118A and 118B of the sputtering plate 104 are aligned with the through holes 224A and the holes of the back plate 206 224B. The fixing member 308 is arranged from the second plate surface 222 of the back plate 206 into the through holes 224A and 224B of the back plate 206 and the recesses 118A and 118B of the sputtering plate 104, and the fixing plate 308 is used to join the back plate 206 and the sputtering plate 104. As shown in FIG. 4A, a sputtering target 402 is formed.
請參照第3圖與第4A圖,一實施例中,固定件308包括螺絲、插栓、金屬性黏著劑等。一實施例中,穿孔224A、224B與凹洞118A、118B可利用鑽孔方式形成而具有對應螺絲的螺紋側表面,固定件308可利用螺旋機制緊鎖背板206與濺射板104,因此背板206與濺射板104的接合方法簡單、快速。可利用螺絲起子任意將螺絲旋進、旋出穿孔224A、224B與凹洞118A、118B,因此配置彈性大,製程較傳統使用金屬層整面焊接簡便。此外,可使用一般市售的螺絲,因此接合成本亦較低。Please refer to FIG. 3 and FIG. 4A. In one embodiment, the fixing member 308 includes a screw, a plug, a metallic adhesive, and the like. In one embodiment, the perforations 224A, 224B and the recesses 118A, 118B can be formed by drilling to have a threaded side surface of the corresponding screw, and the fixing member 308 can lock the back plate 206 and the sputtering plate 104 by a screw mechanism. The method of joining the plate 206 and the sputtering plate 104 is simple and fast. You can use a screwdriver to screw the screws in and out of the holes 224A, 224B and the recesses 118A, 118B arbitrarily. Therefore, the configuration is more flexible and the manufacturing process is simpler than the traditional welding of the entire metal layer. In addition, since commercially available screws can be used, the joining cost is also low.
另一實施例中,如第4B圖所示的濺射靶材502,厚度比邊緣區116更大的濺射區114可對固定件308提供更大的鎖固深度,強化背板206與濺射板104之間的鎖固效果。濺射區114對應凹洞118A的部分具有大於0的厚度t,其中T1=t+D1。在固定厚度T1下,厚度t越大表示能提供愈多的靶材濺射量。In another embodiment, as shown in FIG. 4B, the sputtering target 502, the sputtering region 114 having a thickness greater than that of the edge region 116 can provide a larger locking depth for the fixing member 308, and strengthen the back plate 206 and the sputtering The locking effect between the shooting plates 104. The portion of the sputtering region 114 corresponding to the cavity 118A has a thickness t greater than 0, where T1 = t + D1. At a fixed thickness T1, a larger thickness t indicates that a larger amount of target sputtering can be provided.
濺射板104的材質可視欲沉積在基材上的薄膜材質而定。背板206與濺射板104的材質可為相同或不同。一實施例中,濺射板104的材質是選用鋁,並可一體成型,以同時形成濺射區114及邊緣區116,且背板206材質為銅。另一實施例中,濺射板104與背板206的材質皆為鋁或銅。The material of the sputtering plate 104 may depend on the material of the thin film to be deposited on the substrate. The materials of the back plate 206 and the sputtering plate 104 may be the same or different. In one embodiment, the material of the sputtering plate 104 is aluminum, and can be integrally formed to form the sputtering region 114 and the edge region 116 at the same time, and the material of the back plate 206 is copper. In another embodiment, the materials of the sputtering plate 104 and the back plate 206 are aluminum or copper.
固定件308可選用能影響磁場的材質形成,且在濺射靶材402中的配置位置亦可視所需的磁場分佈調整設計。固定件308亦可選用不會影響磁場的材質形成。固定件308的材質可相同或不同於背板206/濺射板104。固定件308的材質可例如包括不鏽鋼、鐵等等。The fixing member 308 can be formed of a material that can affect the magnetic field, and the position of the fixing member 308 in the sputtering target 402 can be adjusted according to the required magnetic field distribution design. The fixing member 308 may also be formed of a material that does not affect the magnetic field. The material of the fixing member 308 may be the same or different from the back plate 206 / sputter plate 104. The material of the fixing member 308 may include, for example, stainless steel, iron, or the like.
本發明的概念並不限如圖所示的濺射靶材402,亦可適當變化設計濺射靶材。The concept of the present invention is not limited to the sputtering target material 402 shown in the figure, and the sputtering target material can also be appropriately designed.
一實施例中,背板206中亦可配置例如U形水道(未顯示),用以提供冷卻、散熱的效果,且穿孔224A、224B係避開水道配置。In one embodiment, a U-shaped water channel (not shown) may be disposed in the back plate 206 to provide cooling and heat dissipation effects, and the perforations 224A and 224B are configured to avoid the water channel.
一實施例中,背板206與濺射板104之間可僅利用固定件308彼此鎖固,但仍可視需求任意配置黏接層(未顯示),例如包括軟焊劑,用以更堅固地黏合背板206與濺射板104。In one embodiment, the back plate 206 and the sputtering plate 104 can be locked to each other only by using the fixing member 308, but an adhesive layer (not shown) can be optionally configured, for example, including a soft solder for more firm adhesion The back plate 206 and the sputtering plate 104.
固定件308的配置位置可視需求適當調變。一實施例中,舉例來說,如第4C圖所示的濺射靶材602,其固定件308可只配置在邊緣區116中,濺射區114中並沒有配置固定件308,因此濺射區114的所有厚度T1皆可供應濺射,可提高濺射靶材的使用壽命。The arrangement position of the fixing member 308 can be appropriately adjusted according to requirements. In one embodiment, for example, the sputtering target 602 shown in FIG. 4C, the fixing member 308 may be disposed only in the edge region 116, and the sputtering member 114 is not provided with the fixing member 308, so All thicknesses T1 of the region 114 can be supplied with sputtering, which can increase the service life of the sputtering target.
一實施例中,濺射板與背板的厚度分佈可依據濺射靶材實際在濺鍍腔室中的濺射消耗分佈適當對應調整,例如消耗率較快的部分可設計具有相對較大的厚度,或設計成其他的形狀,例如圓形(圓板形狀、圓環形狀,以此類推其他形狀)、三角形、四方型等等。In an embodiment, the thickness distribution of the sputtering plate and the back plate can be appropriately adjusted according to the actual sputtering consumption distribution of the sputtering target in the sputtering chamber. For example, the part with a faster consumption rate can be designed to have a relatively large Thickness, or designed into other shapes, such as circular (circular plate shape, ring shape, and so on), triangle, square, etc.
綜上所述,雖然本發明已以實施例揭露如上,然其並非用以限定本發明。本發明所屬技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作各種之更動與潤飾。因此,本發明之保護範圍當視後附之申請專利範圍所界定者為準。In summary, although the present invention has been disclosed as above with the embodiments, it is not intended to limit the present invention. Those with ordinary knowledge in the technical field to which the present invention pertains can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be determined by the scope of the attached patent application.
104‧‧‧濺射板104‧‧‧Sputtered Plate
110‧‧‧濺射表面 110‧‧‧Sputtered surface
112‧‧‧背表面 112‧‧‧back surface
114‧‧‧濺射區 114‧‧‧Sputtering area
116‧‧‧邊緣區 116‧‧‧Marginal zone
118A、118B‧‧‧凹洞 118A, 118B ‧ ‧ pits
206‧‧‧背板 206‧‧‧Back
220‧‧‧第一板表面 220‧‧‧ surface of the first board
222‧‧‧第二板表面 222‧‧‧Second plate surface
224A、224B‧‧‧穿孔 224A, 224B‧‧‧Perforated
308‧‧‧固定件 308‧‧‧Fixed parts
402、502、602‧‧‧濺射靶材 402, 502, 602‧‧‧‧ sputtering targets
D1、D2‧‧‧深度 D1, D2‧‧‧ depth
t、T1、T2‧‧‧厚度 t, T1, T2‧‧‧thickness
第1圖顯示濺射板的立體透視圖。 第2圖顯示背板的立體透視圖。 第3圖顯示利用固定件接合濺射板與背板的示意圖。 第4A圖顯示一實施例之濺射靶材的剖面圖。 第4B圖顯示另一實施例之濺射靶材的剖面圖。 第4C圖顯示又另一實施例之濺射靶材的剖面圖。Figure 1 shows a perspective perspective view of a sputtering plate. Figure 2 shows a perspective perspective view of the back plate. FIG. 3 is a schematic view showing that the sputter plate and the back plate are joined by a fixing member. FIG. 4A is a cross-sectional view of a sputtering target according to an embodiment. FIG. 4B is a cross-sectional view of a sputtering target according to another embodiment. FIG. 4C is a cross-sectional view of a sputtering target according to still another embodiment.
Claims (11)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW107103963A TWI667362B (en) | 2018-02-05 | 2018-02-05 | Sputtering target |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW107103963A TWI667362B (en) | 2018-02-05 | 2018-02-05 | Sputtering target |
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| Publication Number | Publication Date |
|---|---|
| TWI667362B true TWI667362B (en) | 2019-08-01 |
| TW201934785A TW201934785A (en) | 2019-09-01 |
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| TW107103963A TWI667362B (en) | 2018-02-05 | 2018-02-05 | Sputtering target |
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| TWI806224B (en) * | 2021-11-05 | 2023-06-21 | 臺灣蘇晶股份有限公司 | Target and back plate lamination manufacturing method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US20110005919A1 (en) * | 2009-05-08 | 2011-01-13 | John Madocks | Sputtering target temperature control utilizing layers having predetermined emissivity coefficients |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US20110005919A1 (en) * | 2009-05-08 | 2011-01-13 | John Madocks | Sputtering target temperature control utilizing layers having predetermined emissivity coefficients |
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