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TWI657171B - ＳｉＣ磊晶晶圓及其製造方法、以及大凹坑缺陷檢測方法、缺陷識別方法 - Google Patents

ＳｉＣ磊晶晶圓及其製造方法、以及大凹坑缺陷檢測方法、缺陷識別方法 Download PDF

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Publication number
TWI657171B
TWI657171B TW106128222A TW106128222A TWI657171B TW I657171 B TWI657171 B TW I657171B TW 106128222 A TW106128222 A TW 106128222A TW 106128222 A TW106128222 A TW 106128222A TW I657171 B TWI657171 B TW I657171B
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TW
Taiwan
Prior art keywords
sic
sic epitaxial
substrate
defects
epitaxial layer
Prior art date
Application number
TW106128222A
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English (en)
Chinese (zh)
Other versions
TW201823533A (zh
Inventor
Ling GUO
郭玲
Koji Kamei
龜井宏二
Original Assignee
Showa Denko K. K.
日商昭和電工股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by Showa Denko K. K., 日商昭和電工股份有限公司 filed Critical Showa Denko K. K.
Publication of TW201823533A publication Critical patent/TW201823533A/zh
Application granted granted Critical
Publication of TWI657171B publication Critical patent/TWI657171B/zh

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • H10P14/2904—
    • H10P14/2926—
    • H10P14/3208—
    • H10P14/3408—
    • H10P74/203—

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Recrystallisation Techniques (AREA)
TW106128222A 2016-08-31 2017-08-21 ＳｉＣ磊晶晶圓及其製造方法、以及大凹坑缺陷檢測方法、缺陷識別方法 TWI657171B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2016170221 2016-08-31
JP2016-170221 2016-08-31
JP2016-185945 2016-09-23
JP2016185945A JP6493690B2 (ja) 2016-08-31 2016-09-23 ＳｉＣエピタキシャルウェハ及びその製造方法、並びに、ラージピット欠陥検出方法、欠陥識別方法

Publications (2)

Publication Number Publication Date
TW201823533A TW201823533A (zh) 2018-07-01
TWI657171B true TWI657171B (zh) 2019-04-21

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TW106128222A TWI657171B (zh) 2016-08-31 2017-08-21 ＳｉＣ磊晶晶圓及其製造方法、以及大凹坑缺陷檢測方法、缺陷識別方法

Country Status (4)

Country Link
JP (1) JP6493690B2 (ja)
CN (1) CN109642343B (ja)
DE (1) DE112017004347B4 (ja)
TW (1) TWI657171B (ja)

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US11293115B2 (en) 2016-08-31 2022-04-05 Showa Denko K.K. Method for producing a SiC epitaxial wafer containing a total density of large pit defects and triangular defects of 0.01 defects/cm2 or more and 0.6 defects/cm2 or less
US11320388B2 (en) 2016-08-31 2022-05-03 Showa Denko K.K. SiC epitaxial wafer containing large pit defects with a surface density of 0.5 defects/CM2 or less, and production method therefor
JP6459132B2 (ja) * 2016-08-31 2019-01-30 昭和電工株式会社 ＳｉＣエピタキシャルウェハ及びその製造方法、並びに、欠陥識別方法
JP6585799B1 (ja) * 2018-10-15 2019-10-02 昭和電工株式会社 ＳｉＣ基板の評価方法及びＳｉＣエピタキシャルウェハの製造方法
JP7204436B2 (ja) * 2018-11-16 2023-01-16 昭和電工株式会社 欠陥除去方法及びＳｉＣエピタキシャルウェハの製造方法
JP7179219B1 (ja) 2019-02-06 2022-11-28 昭和電工株式会社 ＳｉＣデバイス及びその製造方法
JP7148427B2 (ja) 2019-02-06 2022-10-05 昭和電工株式会社 ＳｉＣエピタキシャルウェハ及びその製造方法
KR102068933B1 (ko) * 2019-07-11 2020-01-21 에스케이씨 주식회사 탄화규소 잉곳 성장용 분말 및 이를 이용한 탄화규소 잉곳의 제조방법
CN111273158B (zh) * 2020-02-26 2022-04-15 上海韦尔半导体股份有限公司 一种排查弹坑的测试方法、装置及智能打线设备
JP7610934B2 (ja) * 2020-07-21 2025-01-09 三菱電機株式会社 炭化珪素エピタキシャルウエハの製造方法
CN113295616A (zh) * 2021-03-30 2021-08-24 浙江大学杭州国际科创中心 一种SiC晶圆及其外延层结构的综合测试方法
CN114136994A (zh) * 2021-11-30 2022-03-04 无锡学院 一种SiC雪崩光电二极管的无损缺陷检测方法及装置
WO2023218809A1 (ja) * 2022-05-11 2023-11-16 住友電気工業株式会社 炭化珪素基板、炭化珪素エピタキシャル基板、炭化珪素基板の製造方法および炭化珪素半導体装置の製造方法

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Also Published As

Publication number Publication date
CN109642343B (zh) 2021-10-26
TW201823533A (zh) 2018-07-01
JP6493690B2 (ja) 2019-04-03
DE112017004347T5 (de) 2019-05-23
CN109642343A (zh) 2019-04-16
DE112017004347B4 (de) 2024-04-25
JP2018039714A (ja) 2018-03-15

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