[go: up one dir, main page]

TWI652120B - Coating method - Google Patents

Coating method Download PDF

Info

Publication number
TWI652120B
TWI652120B TW106120181A TW106120181A TWI652120B TW I652120 B TWI652120 B TW I652120B TW 106120181 A TW106120181 A TW 106120181A TW 106120181 A TW106120181 A TW 106120181A TW I652120 B TWI652120 B TW I652120B
Authority
TW
Taiwan
Prior art keywords
liquid
chemical liquid
chemical
substrate
circular substrate
Prior art date
Application number
TW106120181A
Other languages
Chinese (zh)
Other versions
TW201803651A (en
Inventor
吉田省吾
小椋浩之
吉田隆一
髙橋保夫
Original Assignee
斯庫林集團股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 斯庫林集團股份有限公司 filed Critical 斯庫林集團股份有限公司
Publication of TW201803651A publication Critical patent/TW201803651A/en
Application granted granted Critical
Publication of TWI652120B publication Critical patent/TWI652120B/en

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00Processes for applying liquids or other fluent materials
    • B05D1/40Distributing applied liquids or other fluent materials by members moving relatively to surface
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00Processes for applying liquids or other fluent materials
    • B05D1/36Successively applying liquids or other fluent materials, e.g. without intermediate treatment
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • H10P14/6342

Landscapes

  • Application Of Or Painting With Fluid Materials (AREA)
  • Engineering & Computer Science (AREA)
  • Coating Apparatus (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

一種塗布方法,係在圓形基板W上形成藥液之液池PD之前,形成螺旋狀之藥液膜CF。液池PD之藥液會與螺旋狀之藥液膜CF好好地溶合為一。為此,在使圓形基板W旋轉來擴展液池PD之藥液以覆蓋螺旋狀之藥液膜CF時,會使液池PD之藥液良好地擴展。又,在液池PD之藥液擴展時,能使螺旋狀之藥液膜CF的表面之凹凸成為平坦。藉由此等就可以防止斷膜等,且可以在圓形基板W上形成高黏度之藥液膜CF時使膜厚成為均一。 A coating method is to form a spiral liquid chemical film CF before forming a liquid pool PD of a chemical liquid on a circular substrate W. The liquid medicine of the liquid pool PD is well fused with the spiral liquid chemical film CF. For this reason, when the circular substrate W is rotated to expand the liquid medicine of the liquid pool PD to cover the spiral medical liquid film CF, the liquid medicine of the liquid pool PD is favorably expanded. Further, when the liquid medicine of the liquid pool PD is expanded, the unevenness of the surface of the spiral chemical liquid film CF can be made flat. By this, it is possible to prevent a film breakage or the like, and it is possible to make the film thickness uniform when a highly viscous liquid chemical film CF is formed on the circular substrate W.

Description

塗布方法 Coating method

本發明係關於一種對半導體基板、液晶顯示器用玻璃基板、光罩(photomask)用玻璃基板、光碟用基板等的基板塗布高黏度之藥液的塗布方法。 The present invention relates to a coating method for applying a high-viscosity chemical liquid to a substrate such as a semiconductor substrate, a glass substrate for a liquid crystal display, a glass substrate for a photomask, or a substrate for a disk.

塗布裝置係具備:保持旋轉部,用以保持圓形基板並使圓形基板旋轉;以及噴嘴(nozzle),用以從由保持旋轉部所保持的基板之上方對圓形基板吐出藥液(例如,參照專利文獻1、2)。塗布裝置係以被稱為旋轉塗布的方法來形成藥液膜。首先,使圓形基板以低速旋轉。其次,使藥液從噴嘴吐出。然後,在停止藥液之吐出之後,使圓形基板以高速旋轉以便圓形基板上之藥液能成為所期望之膜厚。在專利文獻1、2中係在使藥液從噴嘴吐出時,以橫越圓形基板之旋轉中心的方式來使噴嘴移動。 The coating device includes: a holding rotating portion for holding the circular substrate and rotating the circular substrate; and a nozzle for discharging the liquid medicine from the substrate held by the holding rotating portion to the circular substrate (for example) Refer to Patent Documents 1 and 2). The coating device forms a chemical liquid film by a method called spin coating. First, the circular substrate is rotated at a low speed. Next, the drug solution is spit out from the nozzle. Then, after the discharge of the chemical liquid is stopped, the circular substrate is rotated at a high speed so that the chemical liquid on the circular substrate can have a desired film thickness. In Patent Documents 1 and 2, when the chemical liquid is discharged from the nozzle, the nozzle is moved so as to traverse the center of rotation of the circular substrate.

[先前技術文獻] [Previous Technical Literature]

[專利文獻] [Patent Literature]

專利文獻1:日本特開昭60-217627號公報。 Patent Document 1: Japanese Laid-Open Patent Publication No. SHO 60-217627.

專利文獻2:日本特許第3970695號公報。 Patent Document 2: Japanese Patent No. 3970695.

然而,如此的習知例係有如下的問題。亦即,即便使用高黏度之藥液進行旋轉塗布,仍有藥液不能均等地擴展,或藥液在圓形基板之中心部隆起,或藥液不能好好地擴展的問題。例如,在圓形基板之表面(主面)形成有積體電路等的圖案(pattern),藉此,圓形基板之表面就會具有凹凸。 However, such conventional examples have the following problems. That is, even if spin coating is performed using a highly viscous chemical solution, there is a problem that the chemical solution cannot be uniformly expanded, or the chemical liquid is bulged at the center of the circular substrate, or the chemical solution cannot be well expanded. For example, a pattern such as an integrated circuit is formed on the surface (main surface) of the circular substrate, whereby the surface of the circular substrate has irregularities.

對該圓形基板之凹凸的表面上吐出例如300cP(centipoise;厘泊)以上的高黏度之藥液,且以例如1000rpm以上之高速旋轉進行旋轉塗布。在此情況下,藉由凹凸就會發生如圖16中的(a)之符號M所示之未載有藥液膜CF的斷膜(未塗布),或是如圖16中的(b)之符號N所示,有反映出凹凸。藉此,就會局部使膜厚均一性惡化。 A high-viscosity chemical liquid of, for example, 300 cP (centipoise; centipoise) or more is discharged onto the surface of the uneven surface of the circular substrate, and spin coating is performed at a high speed rotation of, for example, 1000 rpm or more. In this case, by the unevenness, a film (uncoated) which is not loaded with the chemical liquid film CF as indicated by a symbol M in (a) of FIG. 16 or a (b) as shown in FIG. 16 is generated. As indicated by the symbol N, the unevenness is reflected. Thereby, the film thickness uniformity is locally deteriorated.

本發明係有鑑於如此之情形而開發完成,其目的在於提供一種可以在圓形基板上形成高黏度之藥液時使膜厚成為均一的塗布方法。 The present invention has been developed in view of such circumstances, and an object thereof is to provide a coating method capable of making a film thickness uniform when a high-viscosity chemical liquid is formed on a circular substrate.

本發明係為了達成如此之目的而採取如下的構成。亦即,本發明之塗布方法係將300cP以上之高黏度藥液供給至圓形基板上並在前述圓形基板上形成藥液膜;前述塗布 方法係具備以下步驟:使前述圓形基板以第一轉速旋轉,且一邊使位於前述圓形基板之上方的藥液噴嘴朝向前述圓形基板之半徑方向移動,一邊從前述藥液噴嘴將藥液吐出至前述圓形基板上,藉此形成螺旋狀之藥液膜;在形成前述螺旋狀之藥液膜之後,從前述藥液噴嘴將藥液吐出至前述圓形基板之中心部,藉此在前述圓形基板之中心部形成藥液之液池;以及在形成前述藥液之液池之後,以比前述第一轉速更快之第二轉速使前述圓形基板旋轉,藉此來擴展前述液池之藥液以覆蓋前述螺旋狀之藥液膜。 The present invention has the following constitution in order to achieve such an object. That is, the coating method of the present invention supplies a high-viscosity chemical solution of 300 cP or more to a circular substrate and forms a chemical liquid film on the circular substrate; the coating The method includes the steps of: rotating the circular substrate at a first rotation speed, and moving the chemical liquid nozzle from the chemical liquid nozzle while moving the chemical liquid nozzle located above the circular substrate toward a radial direction of the circular substrate Discharging onto the circular substrate to form a spiral drug solution; after forming the spiral drug solution film, the drug solution is discharged from the drug solution nozzle to the center of the circular substrate, thereby a central portion of the circular substrate forms a liquid pool of the chemical liquid; and after the liquid pool forming the chemical liquid, the circular substrate is rotated at a second rotation speed faster than the first rotation speed, thereby expanding the liquid The liquid of the pool covers the spiral liquid film.

依據本發明之塗布方法,則在圓形基板上形成藥液之液池之前,形成螺旋狀之藥液膜。液池之藥液會與螺旋狀之藥液膜好好地溶合為一。為此,在使圓形基板旋轉來擴展液池之藥液以覆蓋螺旋狀之藥液膜時,會使液池之藥液良好地擴展。又,在液池之藥液擴展時,能使螺旋狀之藥液膜的表面之凹凸成為平坦。藉由此等就可以防止斷膜等,且可以在圓形基板上形成高黏度之藥液膜時使膜厚成為均一。 According to the coating method of the present invention, a spiral liquid chemical film is formed before the liquid pool of the chemical liquid is formed on the circular substrate. The liquid solution of the liquid pool will be well combined with the spiral liquid film. For this reason, when the circular substrate is rotated to expand the liquid medicine of the liquid pool to cover the spiral liquid chemical film, the liquid medicine of the liquid pool is well expanded. Further, when the liquid medicine in the liquid pool is expanded, the unevenness of the surface of the spiral chemical liquid film can be made flat. By this, it is possible to prevent breakage or the like, and it is possible to make the film thickness uniform when a highly viscous liquid chemical film is formed on a circular substrate.

又,在圓形基板之中心部形成液池之後,當形成螺旋狀之藥液膜時,液池之藥液就會乾燥。在此情況下,在以第二轉速(高速)來使圓形基板旋轉時,液池不會良好地擴展,而藥液膜會在比圓形基板之周緣部更靠近中心部隆起。然而,由於是在形成螺旋狀之藥液膜之後才形成液池,所 以不會使液池之藥液乾燥,而可以良好地擴展液池。又由於可以良好地擴展藥液,所以不會為了擴展而吐出多餘的藥液。為此,可以節約藥液。 Further, after the liquid pool is formed in the center portion of the circular substrate, when the spiral liquid chemical film is formed, the liquid medicine in the liquid pool is dried. In this case, when the circular substrate is rotated at the second rotation speed (high speed), the liquid pool does not spread well, and the chemical liquid film is raised closer to the center portion than the peripheral portion of the circular substrate. However, since the liquid pool is formed after the formation of the spiral liquid film, The liquid pool can be well extended so as not to dry the liquid medicine of the liquid pool. Further, since the chemical solution can be spread well, no excess chemical solution is discharged for the purpose of expansion. For this reason, the liquid medicine can be saved.

又,上述之塗布方法中,較佳是在形成前述螺旋狀之藥液膜時,前述藥液噴嘴係從前述圓形基板之周緣部朝向前述圓形基板之中心部沿著前述圓形基板之半徑方向移動。在形成螺旋狀之藥液膜之後,藥液噴嘴係位於圓形基板之中心部之上方。為此,藥液噴嘴係可以直接進行形成液池的動作。亦即,可以效率佳地形成藥液之液池。 Further, in the above-described coating method, it is preferable that the chemical liquid nozzle is formed from a peripheral portion of the circular substrate toward a central portion of the circular substrate along the circular substrate when the spiral chemical liquid film is formed Move in the radial direction. After forming the spiral medical liquid film, the medical liquid nozzle is located above the central portion of the circular substrate. For this reason, the liquid medicine nozzle can directly perform the action of forming the liquid pool. That is, the liquid pool of the chemical liquid can be formed efficiently.

又,上述之塗布方法較佳是更具備以下步驟:使前述圓形基板以前述第一轉速旋轉,且在已停止前述藥液噴嘴之移動的狀態下從位於前述圓形基板之周緣部之上方的前述藥液噴嘴將藥液吐出至前述圓形基板上,藉此沿著前述圓形基板之周緣部形成環狀之藥液膜。 Further, preferably, the coating method further includes the step of rotating the circular substrate at the first rotation speed and from above a peripheral portion of the circular substrate while stopping the movement of the chemical liquid nozzle The chemical liquid nozzle discharges the chemical solution onto the circular substrate, thereby forming a ring-shaped chemical liquid film along the peripheral edge portion of the circular substrate.

在圓形基板之周緣部附近將藥液膜形成為螺旋狀的情況下,會發生未形成有藥液膜的區域。然而,由於是沿著圓形基板之周緣部將藥液膜形成為環狀,所以可以消除未形成有藥液膜的區域。為此,在圓形基板之周緣部附近,可以防止斷膜等,且可以在圓形基板上形成高黏度之藥液膜時使膜厚成為均一。又,當橫越圓形基板之周緣部之內外的境界時,例如,從藥液噴嘴吐出的藥液之液柱就會變 得不安定,此後,恐有無法良好地形成螺旋狀之藥液膜之虞。然而,可以防止此問題。 When the chemical liquid film is formed in a spiral shape in the vicinity of the peripheral portion of the circular substrate, a region where the chemical liquid film is not formed occurs. However, since the chemical liquid film is formed in a ring shape along the peripheral edge portion of the circular substrate, the region where the chemical liquid film is not formed can be eliminated. Therefore, in the vicinity of the peripheral portion of the circular substrate, it is possible to prevent film breakage and the like, and it is possible to make the film thickness uniform when a highly viscous liquid chemical film is formed on the circular substrate. Further, when the boundary between the inside and the outside of the peripheral portion of the circular substrate is traversed, for example, the liquid column of the chemical liquid discharged from the liquid medicine nozzle becomes After being unstable, there is a fear that the spiral liquid film cannot be formed well. However, this problem can be prevented.

又,上述之塗布方法較佳是更具備執行預濕(prewet)處理的步驟,該預濕處理係指在從前述藥液噴嘴吐出藥液之前,使前述圓形基板旋轉,且從溶劑噴嘴將溶劑吐出至前述圓形基板上,藉此在前述圓形基板上形成溶劑膜的處理。在欲以無預濕處理來形成螺旋狀之藥液膜時,吐出的藥液就會在藥液噴嘴之吐出口附近成塊,而有的情況不易使藥液附著於圓形基板。然而,藉由預濕處理就可以容易使藥液附著於圓形基板。又,藥液容易在基板上之溶劑膜所存在的部分流動。 Further, the coating method described above preferably further includes a step of performing a prewet treatment, which means rotating the circular substrate before ejecting the chemical solution from the liquid chemical nozzle, and from the solvent nozzle The solvent is discharged onto the circular substrate, whereby a solvent film is formed on the circular substrate. When a spiral liquid chemical film is to be formed without pre-wetting treatment, the discharged chemical liquid is agglomerated near the discharge port of the chemical liquid nozzle, and in some cases, it is difficult to adhere the chemical liquid to the circular substrate. However, the chemical solution can be easily attached to the circular substrate by the pre-wetting treatment. Further, the chemical liquid easily flows in a portion where the solvent film on the substrate exists.

又,在上述之塗布方法中,前述預濕處理之一例係成為溶劑已進入形成於前述圓形基板之凹部內的狀態。由於溶劑已進入凹部,所以容易進行與藥液之置換。為此,可以防止往凹部的藥液之填埋不足。 Moreover, in the above-described coating method, one example of the pre-wetting treatment is a state in which the solvent has entered the concave portion formed in the circular substrate. Since the solvent has entered the concave portion, it is easy to perform replacement with the chemical liquid. For this reason, it is possible to prevent insufficient filling of the chemical liquid to the concave portion.

又,在上述之塗布方法中,前述螺旋狀之藥液膜中之各圈的藥液膜較佳是在半徑方向未與鄰圈的前述藥液膜產生間隙。當各圈的藥液膜與鄰圈的藥液膜發生間隙時,即便以第二轉速(高速)使圓形基板旋轉來擴展液池之藥液仍有避開該間隙或是凹部而流動的情況。為此,藉由沒有發生該間隙就可以良好地擴展液池之藥液。 Further, in the above coating method, it is preferable that the chemical liquid film of each of the spiral chemical liquid films does not have a gap with the chemical liquid film of the adjacent ring in the radial direction. When there is a gap between the chemical liquid film of each ring and the chemical liquid film of the adjacent ring, even if the circular substrate is rotated at the second rotation speed (high speed), the liquid medicine in the expansion liquid pool still flows away from the gap or the concave portion. . For this reason, the liquid medicine of the liquid pool can be well expanded by not generating the gap.

又,在上述之塗布方法中,較佳是在形成前述螺旋狀之藥液膜時,當前述藥液噴嘴位於比前述圓形基板之周緣部側之位置更靠近前述圓形基板之中心部側時,將前述藥液噴嘴之前端面與前述圓形基板之表面之間的餘隙(clearance)形成為比前述周緣部側之位置中的前述餘隙更大。在比圓形基板之中心部側的位置更靠近周緣部側的位置,相對於藥液噴嘴的圓形基板之相對的轉速會變快。為此,在藥液著液於圓形基板時,施加於藥液之往旋轉方向之力的作用會變大,且容易引起因藥液破碎而被分斷的斷液。在藥液噴嘴位於周緣部側時,可以藉由減小餘隙來防止斷液。又,在藥液噴嘴位於中心部時,會形成藥液之液池。可以藉由加大餘隙來抑制藥液附著於藥液噴嘴。 Further, in the above-described coating method, it is preferable that the chemical liquid nozzle is located closer to a center portion of the circular substrate than a position on a peripheral portion side of the circular substrate when the spiral chemical liquid film is formed. At the time, the clearance between the front end surface of the chemical liquid nozzle and the surface of the circular substrate is formed to be larger than the aforementioned clearance in the position on the peripheral edge side. At a position closer to the peripheral portion side than the position on the central portion side of the circular substrate, the relative rotational speed with respect to the circular substrate of the chemical liquid nozzle is increased. For this reason, when the chemical liquid is immersed in the circular substrate, the action of the force applied to the direction of rotation of the chemical liquid becomes large, and the liquid breakage which is broken due to the breakage of the chemical liquid is likely to occur. When the chemical liquid nozzle is located on the peripheral portion side, the liquid leakage can be prevented by reducing the clearance. Further, when the chemical liquid nozzle is located at the center portion, a liquid pool of the chemical liquid is formed. It is possible to suppress the adhesion of the chemical solution to the liquid medicine nozzle by increasing the clearance.

又,在上述之塗布方法中,較佳是在形成前述螺旋狀之藥液膜時,當前述藥液噴嘴位於比前述圓形基板之周緣部側之位置更靠近前述圓形基板之中心部側時,將前述圓形基板之轉速形成為比位於前述周緣部側時的前述轉速更快。在比圓形基板之中心部側的位置更靠近周緣部側的位置,圓形基板相對於藥液噴嘴之相對性的轉速會變快。為此,在藥液著液於圓形基板時,施加於藥液之往旋轉方向之力的作用會變大,且容易引起因藥液破碎而被分斷的斷液。在藥液噴嘴位於周緣部側時係減慢圓形基板之轉速。藉此,可以防止從藥液噴嘴所吐出的藥液被分斷的斷液。 又,在藥液噴嘴位於中心部側時係加快圓形基板之轉速。藉此可以防止吐出過多的藥液。 Further, in the above-described coating method, it is preferable that the chemical liquid nozzle is located closer to a center portion of the circular substrate than a position on a peripheral portion side of the circular substrate when the spiral chemical liquid film is formed. At this time, the rotation speed of the circular substrate is formed to be faster than the aforementioned rotation speed when the peripheral portion side is located. At a position closer to the peripheral portion side than the position on the central portion side of the circular substrate, the relative rotational speed of the circular substrate with respect to the chemical liquid nozzle is increased. For this reason, when the chemical liquid is immersed in the circular substrate, the action of the force applied to the direction of rotation of the chemical liquid becomes large, and the liquid breakage which is broken due to the breakage of the chemical liquid is likely to occur. When the liquid medicine nozzle is located on the side of the peripheral portion, the rotation speed of the circular substrate is slowed down. Thereby, it is possible to prevent the liquid medicine discharged from the chemical liquid nozzle from being broken. Further, when the chemical liquid nozzle is located on the center side, the rotation speed of the circular substrate is accelerated. This prevents excessive liquid medicine from being discharged.

依據本發明之塗布方法,則在圓形基板上形成藥液之液池之前,形成螺旋狀之藥液膜。液池之藥液會與螺旋狀之藥液膜好好地溶合為一。為此,在使圓形基板旋轉來擴展液池之藥液以覆蓋螺旋狀之藥液膜時,會使液池之藥液良好地擴展。又,在液池之藥液擴展時,能使螺旋狀之藥液膜的表面之凹凸成為平坦。藉由此等就可以防止斷膜等,且可以在圓形基板上形成高黏度之藥液膜時使膜厚成為均一。 According to the coating method of the present invention, a spiral liquid chemical film is formed before the liquid pool of the chemical liquid is formed on the circular substrate. The liquid solution of the liquid pool will be well combined with the spiral liquid film. For this reason, when the circular substrate is rotated to expand the liquid medicine of the liquid pool to cover the spiral liquid chemical film, the liquid medicine of the liquid pool is well expanded. Further, when the liquid medicine in the liquid pool is expanded, the unevenness of the surface of the spiral chemical liquid film can be made flat. By this, it is possible to prevent breakage or the like, and it is possible to make the film thickness uniform when a highly viscous liquid chemical film is formed on a circular substrate.

1‧‧‧塗布裝置 1‧‧‧ Coating device

2‧‧‧保持旋轉部 2‧‧‧ Keeping the rotating part

3‧‧‧溶劑噴嘴 3‧‧‧Solvent nozzle

4‧‧‧藥液噴嘴 4‧‧‧Drug nozzle

4a‧‧‧吐出口 4a‧‧‧Exporting

4b‧‧‧內部流路 4b‧‧‧Internal flow path

4c‧‧‧前端面 4c‧‧‧ front face

7‧‧‧旋轉夾盤 7‧‧‧Rotating chuck

8、29‧‧‧旋轉驅動部 8, 29‧‧‧ Rotary Drive Department

9‧‧‧杯體 9‧‧‧ cup body

10‧‧‧待機容器 10‧‧‧Standby container

13‧‧‧溶劑供給源 13‧‧‧ solvent supply source

15‧‧‧溶劑配管 15‧‧‧Solvent piping

17‧‧‧藥液供給源 17‧‧‧Drug supply source

19‧‧‧藥液配管 19‧‧‧Pharmaceutical piping

21‧‧‧溶劑噴嘴移動機構 21‧‧‧Solvent nozzle moving mechanism

23‧‧‧藥液噴嘴移動機構 23‧‧‧Drug liquid nozzle moving mechanism

25、31‧‧‧機械臂 25, 31‧‧ mechanical arm

27‧‧‧軸 27‧‧‧Axis

33‧‧‧上下移動部 33‧‧‧Up and down moving department

35‧‧‧平面移動部 35‧‧‧ Planar Moving Department

37‧‧‧控制部 37‧‧‧Control Department

39‧‧‧操作部 39‧‧‧Operation Department

AX1、AX2‧‧‧旋轉軸 AX1, AX2‧‧‧ rotating shaft

CF‧‧‧藥液膜 CF‧‧‧ liquid film

CL‧‧‧餘隙 CL‧‧‧ clearance

CT‧‧‧中心部 CT‧‧‧ Central Department

E‧‧‧周緣部 E‧‧‧The Peripheral Department

H‧‧‧凹部 H‧‧‧ recess

M‧‧‧斷膜 M‧‧‧Fracture

N‧‧‧凹漥 N‧‧‧ concave

P1、P2‧‧‧泵浦 P1, P2‧‧‧ pump

PD‧‧‧液池 PD‧‧‧ liquid pool

SF‧‧‧溶劑膜 SF‧‧‧ solvent film

V1、V2‧‧‧開閉閥 V1, V2‧‧‧ opening and closing valve

W‧‧‧圓形基板 W‧‧‧Circular substrate

圖1係實施例的塗布裝置之概略構成圖。 Fig. 1 is a schematic configuration diagram of a coating apparatus of an embodiment.

圖2中的(a)係藥液噴嘴之縱剖視圖,(b)係顯示從(a)之A所觀察的藥液噴嘴之吐出口之形狀的示意圖。 Fig. 2 (a) is a longitudinal sectional view of the chemical liquid nozzle, and (b) is a schematic view showing the shape of the discharge port of the chemical liquid nozzle observed from A of (a).

圖3係溶劑噴嘴移動機構及藥液噴嘴移動機構之俯視圖。 Fig. 3 is a plan view showing a solvent nozzle moving mechanism and a chemical liquid nozzle moving mechanism.

圖4係顯示塗布裝置之流程圖。 Figure 4 is a flow chart showing the coating apparatus.

圖5中的(a)至(c)係用以說明實施例的預濕處理之側視圖。 (a) to (c) of Fig. 5 are side views for explaining the pre-wetting treatment of the embodiment.

圖6係用以說明藥液膜之形成的側視圖。 Fig. 6 is a side view for explaining the formation of a chemical liquid film.

圖7中的(a)及(b)係用以說明環狀之藥液膜之形成的俯 視圖。 (a) and (b) in Fig. 7 are used to illustrate the formation of a ring-shaped liquid film. view.

圖8係用以說明螺旋狀之藥液膜之形成的俯視圖。 Fig. 8 is a plan view for explaining the formation of a spiral medical liquid film.

圖9係顯示圓形基板上的塗布範圍之區域的俯視圖。 Fig. 9 is a plan view showing a region of a coating range on a circular substrate.

圖10係顯示各個區域之塗布條件的示意圖。 Fig. 10 is a schematic view showing coating conditions of respective regions.

圖11係用以說明藥液噴嘴之前端面與圓形基板之表面之間的餘隙的側視圖。 Figure 11 is a side view for explaining the clearance between the front end surface of the liquid chemical nozzle and the surface of the circular substrate.

圖12中的(a)及(b)係用以說明環狀及螺旋狀之藥液膜之形成的側視圖。 (a) and (b) of Fig. 12 are side views for explaining the formation of a chemical liquid film of a ring shape and a spiral shape.

圖13係用以說明藥液之液池之形成的側視圖。 Figure 13 is a side view for explaining the formation of a liquid pool of a chemical liquid.

圖14中的(a)係顯示藉由高速旋轉來擴展液池之藥液的樣態的示意圖,(b)係顯示高速旋轉後之藥液膜的示意圖。 Fig. 14 (a) is a schematic view showing a state in which the liquid medicine of the liquid pool is expanded by high-speed rotation, and (b) is a schematic view showing a chemical liquid film after high-speed rotation.

圖15係顯示往凹部的藥液之填埋不足的示意圖。 Fig. 15 is a view showing the insufficient filling of the chemical liquid to the concave portion.

圖16中的(a)係顯示斷膜的示意圖,(b)係顯示有反映出凹凸之樣態的示意圖。 Fig. 16 (a) is a schematic view showing a broken film, and (b) is a schematic view showing a state in which irregularities are reflected.

以下,參照圖式來說明本發明之實施例。圖1係實施例的塗布裝置之概略構成圖。圖2中的(a)係藥液噴嘴之縱剖視圖。圖2中的(b)係顯示從圖2中的(a)之A所觀察的藥液噴嘴之吐出口之形狀的示意圖。圖3係溶劑噴嘴移動機構及藥液噴嘴移動機構之俯視圖。 Hereinafter, embodiments of the present invention will be described with reference to the drawings. Fig. 1 is a schematic configuration diagram of a coating apparatus of an embodiment. Fig. 2 (a) is a longitudinal sectional view of a chemical liquid nozzle. (b) of Fig. 2 is a schematic view showing the shape of the discharge port of the liquid chemical nozzle viewed from A of Fig. 2(a). Fig. 3 is a plan view showing a solvent nozzle moving mechanism and a chemical liquid nozzle moving mechanism.

<塗布裝置1之構成> <Configuration of Coating Device 1>

參照圖1。塗布裝置1係具備保持旋轉部2、溶劑噴嘴3及藥液噴嘴4。 Refer to Figure 1. The coating device 1 includes a holding rotating unit 2, a solvent nozzle 3, and a chemical liquid nozzle 4.

保持旋轉部2係將圓形基板(以下,稱為「基板」)W保持在大致水平姿勢並使其旋轉。保持旋轉部2係具備旋轉夾盤(spin chuck)7和旋轉驅動部8。旋轉夾盤7係設計成能夠繞旋轉軸AX1旋轉,且保持基板W。旋轉夾盤7,例如是構成藉由真空吸附基板W之背面來保持基板W。旋轉驅動部8係進行使旋轉夾盤7繞旋轉軸AX1旋轉的驅動。旋轉驅動部8係例如是由電動馬達所構成。再者,旋轉軸AX1係與基板W之中心部CT大致一致。 The holding rotating unit 2 holds a circular substrate (hereinafter referred to as "substrate") W in a substantially horizontal posture and rotates it. The holding rotary unit 2 includes a spin chuck 7 and a rotation driving unit 8. The rotary chuck 7 is designed to be rotatable about the rotation axis AX1 and hold the substrate W. The spin chuck 7 is configured to hold the substrate W by, for example, vacuum-adsorbing the back surface of the substrate W. The rotation drive unit 8 performs driving for rotating the rotary chuck 7 about the rotation axis AX1. The rotary drive unit 8 is constituted by, for example, an electric motor. Further, the rotation axis AX1 substantially coincides with the center portion CT of the substrate W.

溶劑噴嘴3係用以將溶劑吐出至由保持旋轉部2所保持的基板W上。作為溶劑,例如可使用稀釋劑(thinner)或PGMEA(Propylene Glycol Monomethyl Ether Acetate;丙二醇甲醚醋酸酯)。藉由將溶劑吐出至基板W上進行預濕處理,就容易使從藥液噴嘴4吐出的藥液附著於基板W上。又,容易在基板W上擴展藥液。然而,僅藉由溶劑並無法良好地擴展藥液。 The solvent nozzle 3 is for discharging the solvent onto the substrate W held by the holding rotating portion 2. As the solvent, for example, a thinner or a PGMEA (Propylene Glycol Monomethyl Ether Acetate; propylene glycol methyl ether acetate) can be used. By discharging the solvent onto the substrate W and performing pre-wetting treatment, the chemical solution discharged from the chemical liquid nozzle 4 is easily attached to the substrate W. Moreover, it is easy to spread the chemical solution on the substrate W. However, the liquid medicine cannot be well extended by only the solvent.

藥液噴嘴4係用以將藥液吐出至由保持旋轉部2所保持的基板W上。作為高黏度之藥液係可使用聚醯亞胺(polyimide)等的樹脂。樹脂係被使用作為形成有圖案的基板W之保護膜、或基板W間的層間絕緣膜。藥液之黏度 為300cP以上10000cP以下。如圖2中的(a)及圖2中的(b)所示,藥液噴嘴4的吐出口4a為長方形。當藥液噴嘴4的吐出口4a為長方形時,與吐出口4a為圓形或正方形相較,可以增加旋轉一圈所塗布的面積。又,藉此就能夠縮短吐出時間以及以低旋轉進行使液柱保持安定之狀態的塗布動作。 The chemical liquid nozzle 4 is for discharging the chemical liquid onto the substrate W held by the holding rotary unit 2. As the high viscosity liquid chemical system, a resin such as polyimide can be used. The resin is used as a protective film of the substrate W on which the pattern is formed or an interlayer insulating film between the substrates W. Viscosity of liquid It is 300 cP or more and 10000 cP or less. As shown in (a) of FIG. 2 and (b) of FIG. 2, the discharge port 4a of the chemical liquid nozzle 4 has a rectangular shape. When the discharge port 4a of the chemical liquid nozzle 4 has a rectangular shape, the area to be coated by one rotation can be increased as compared with the case where the discharge port 4a is circular or square. Further, by this, it is possible to shorten the discharge time and the coating operation in which the liquid column is kept in a stable state with low rotation.

再者,在圖2中的(a)中,符號4b為藥液噴嘴4的內部流路(內部流路4b),並與後述之藥液配管19聯通連接。符號4c為藥液噴嘴4的前端面(前端面4c)。又,為了增加旋轉一圈所塗布的面積,當過度加長長方形的吐出口4a之長邊方向的長度時(例如半徑左右的長度),就有無法在中心部CT良好地形成後面所述之液池PD的情況。 In (a) of FIG. 2, reference numeral 4b denotes an internal flow path (internal flow path 4b) of the chemical liquid nozzle 4, and is connected in communication with a chemical liquid pipe 19 to be described later. Reference numeral 4c is a front end surface (front end surface 4c) of the chemical liquid nozzle 4. Further, in order to increase the area to be applied by one rotation, when the length of the rectangular discharge port 4a in the longitudinal direction is excessively lengthened (for example, the length of the radius), the liquid described later cannot be formed well in the center portion CT. The case of the pool PD.

又,如圖1所示,塗布裝置1係具備杯體(cup)9和待機容器(standby pot)10。杯體9係用以包圍基板W及保持旋轉部2之側方。杯體9係以藉由未圖示的驅動部朝向著上下方向移動的方式所構成。另一方面,待機容器10係用以使不使用的藥液噴嘴4待機。待機容器10係為了將藥液噴嘴4之前端部浸漬於溶劑中來洗淨而既可具備溶劑貯存槽,又可用溶劑氛圍來包住藥液噴嘴4之前端部。再者,亦可設置有使溶劑噴嘴3待機的待機容器。 Moreover, as shown in FIG. 1, the coating apparatus 1 is equipped with the cup 9 and the standby pot 10. The cup 9 is for surrounding the substrate W and holding the side of the rotating portion 2. The cup body 9 is configured to be moved in the vertical direction by a driving unit (not shown). On the other hand, the standby container 10 is for waiting for the unused chemical liquid nozzle 4. The standby container 10 may be provided with a solvent storage tank for immersing the front end portion of the chemical liquid nozzle 4 in a solvent, and may cover the end portion of the chemical liquid nozzle 4 with a solvent atmosphere. Further, a standby container that allows the solvent nozzle 3 to stand by may be provided.

又,塗布裝置1係具備溶劑供給源13、溶劑配管15、 泵浦P1及開閉閥V1。溶劑供給源13例如是由瓶子(bottle)所構成。來自溶劑供給源13的溶劑係通過溶劑配管15來供給至溶劑噴嘴3。在溶劑配管15係設置有泵浦P1及開閉閥V1等。泵浦P1係將溶劑送至溶劑噴嘴3,開閉閥V1係進行溶劑之供給及停止。 Further, the coating device 1 includes a solvent supply source 13 and a solvent pipe 15, Pump P1 and open and close valve V1. The solvent supply source 13 is composed of, for example, a bottle. The solvent from the solvent supply source 13 is supplied to the solvent nozzle 3 through the solvent pipe 15. The solvent pipe 15 is provided with a pump P1, an opening and closing valve V1, and the like. The pump P1 sends the solvent to the solvent nozzle 3, and the opening and closing valve V1 supplies and stops the solvent.

又,塗布裝置1係具備藥液供給源17、藥液配管19、泵浦P2及開閉閥V2。藥液供給源17例如是由瓶子所構成。來自藥液供給源17的藥液係通過藥液配管19來供給至藥液噴嘴4。在藥液配管19係設置有泵浦P2及開閉閥V2等。泵浦P2係將藥液送至藥液噴嘴4,開閉閥V2係進行藥液之供給及停止。 Further, the coating device 1 includes a chemical liquid supply source 17, a chemical liquid pipe 19, a pump P2, and an opening and closing valve V2. The chemical supply source 17 is composed of, for example, a bottle. The chemical liquid from the chemical liquid supply source 17 is supplied to the chemical liquid nozzle 4 through the chemical liquid pipe 19. The chemical liquid pipe 19 is provided with a pump P2, an opening and closing valve V2, and the like. The pump P2 sends the chemical solution to the chemical liquid nozzle 4, and the opening and closing valve V2 supplies and stops the chemical liquid.

又,塗布裝置1係具備溶劑噴嘴移動機構21和藥液噴嘴移動機構23(參照圖3)。 Moreover, the coating apparatus 1 is provided with the solvent nozzle moving mechanism 21 and the chemical liquid nozzle moving mechanism 23 (refer FIG. 3).

溶劑噴嘴移動機構21係使溶劑噴嘴3繞旋轉軸AX2旋轉(移動)。溶劑噴嘴移動機構21係具備機械臂(arm)25、軸(shaft)27及旋轉驅動部29。機械臂25係支撐溶劑噴嘴3,軸27係支撐機械臂25。亦即,在棒狀的機械臂25之一端係連接有溶劑噴嘴3,在機械臂25之另一端係連接有軸27。旋轉驅動部29係使軸27繞旋轉軸AX2旋轉,藉此使溶劑噴嘴3及機械臂25繞旋轉軸AX2旋轉。旋轉驅動部29係由電動馬達等所構成。 The solvent nozzle moving mechanism 21 rotates (moves) the solvent nozzle 3 around the rotation axis AX2. The solvent nozzle moving mechanism 21 includes a robot arm 25, a shaft 27, and a rotation driving unit 29. The robot arm 25 supports the solvent nozzle 3, and the shaft 27 supports the robot arm 25. That is, the solvent nozzle 3 is connected to one end of the rod-shaped robot arm 25, and the shaft 27 is connected to the other end of the robot arm 25. The rotation drive unit 29 rotates the shaft 27 about the rotation axis AX2, thereby rotating the solvent nozzle 3 and the robot arm 25 about the rotation axis AX2. The rotation drive unit 29 is constituted by an electric motor or the like.

另一方面,藥液噴嘴移動機構23係使藥液噴嘴4朝向上下方向(Z方向)及沿著基板W之表面的預定之第一方向(X方向)移動。藥液噴嘴移動機構23係具備機械臂31、上下移動部33及平面移動部35。機械臂31係支撐藥液噴嘴4。上下移動部33係使藥液噴嘴4及機械臂31朝向上下方向移動。平面移動部35係使藥液噴嘴4、機械臂31及上下移動部33朝向第一方向(X方向)移動。再者,藥液噴嘴4係以其吐出口4a之長邊方向與第一方向(X方向)一致的方式所配置。 On the other hand, the chemical liquid nozzle moving mechanism 23 moves the chemical liquid nozzle 4 in the vertical direction (Z direction) and in a predetermined first direction (X direction) along the surface of the substrate W. The chemical liquid nozzle moving mechanism 23 includes a mechanical arm 31, a vertical moving portion 33, and a planar moving portion 35. The robot arm 31 supports the chemical liquid nozzle 4. The vertical movement unit 33 moves the chemical liquid nozzle 4 and the mechanical arm 31 in the vertical direction. The plane moving unit 35 moves the chemical liquid nozzle 4, the robot arm 31, and the vertical movement unit 33 in the first direction (X direction). Further, the chemical liquid nozzle 4 is disposed such that the longitudinal direction of the discharge port 4a coincides with the first direction (X direction).

上下移動部33及平面移動部35,例如是由電動馬達、螺桿軸及導軌(guide rail)等所構成。再者,平面移動部35亦可構成使藥液噴嘴4等不僅朝向第一方向移動,還朝向與第一方向正交的第二方向(Y方向)移動。 The vertical movement portion 33 and the planar movement portion 35 are constituted by, for example, an electric motor, a screw shaft, a guide rail, or the like. Further, the planar moving portion 35 may be configured to move the chemical liquid nozzle 4 or the like not only in the first direction but also in the second direction (Y direction) orthogonal to the first direction.

再者,溶劑噴嘴移動機構21係如藥液噴嘴移動機構23般,既可使溶劑噴嘴33朝向上下方向(Z方向)移動,又可使溶劑噴嘴3朝向第一方向及第二方向之至少一方移動。另一方面,藥液噴嘴移動機構23係如溶劑噴嘴移動機構21般,亦可使藥液噴嘴4繞已配置於杯體9之側方的旋轉軸旋轉。又,溶劑噴嘴移動機構21及藥液噴嘴移動機構23亦可為多關節機械臂。 Further, the solvent nozzle moving mechanism 21 can move the solvent nozzle 33 in the vertical direction (Z direction) as in the chemical liquid nozzle moving mechanism 23, and can cause the solvent nozzle 3 to face at least one of the first direction and the second direction. mobile. On the other hand, the chemical liquid nozzle moving mechanism 23 is similar to the solvent nozzle moving mechanism 21, and the chemical liquid nozzle 4 can be rotated around the rotating shaft disposed on the side of the cup 9. Further, the solvent nozzle moving mechanism 21 and the chemical liquid nozzle moving mechanism 23 may be multi-joint robot arms.

圖1所示的塗布裝置1係具備控制部37和操作部39。控制部37係由中央運算處理裝置(CPU:Central Processing Unit)等所構成。控制部37係控制塗布裝置1之各個構成。再者,控制部37亦可由複數個所構成。操作部39係具備顯示部、記憶部及輸入部等。顯示部,例如是由液晶監視器(monitor)所構成。記憶部,例如是由ROM(Read-Only Memory;唯讀記憶體)、RAM(Random-Access Memory;隨機存取記憶體)及硬碟機(hard disk)等的至少一個所構成。輸入部係由鍵盤(keyboard)、滑鼠(mouse)及各種按鍵(button)等的至少一個所構成。在記憶部係記憶有塗布處理之各種條件及塗布裝置1之控制所需要的動作程式(program)等。 The coating device 1 shown in FIG. 1 includes a control unit 37 and an operation unit 39. The control unit 37 is configured by a central processing unit (CPU: Central Processing Unit) or the like. The control unit 37 controls each configuration of the coating device 1. Furthermore, the control unit 37 may be composed of a plurality of components. The operation unit 39 includes a display unit, a storage unit, an input unit, and the like. The display unit is constituted by, for example, a liquid crystal monitor. The memory unit is configured by, for example, at least one of a ROM (Read-Only Memory), a RAM (Random-Access Memory), and a hard disk. The input unit is composed of at least one of a keyboard, a mouse, and various buttons. In the memory unit, various conditions of the coating process and an operation program required for the control of the coating device 1 are stored.

<塗布裝置1之動作> <Action of Coating Device 1>

其次,參照圖4所示之流程圖(flowchart)來針對塗布裝置1之動作加以說明。首先,在圖1中,未圖示的搬運機構係將基板W搬運至保持旋轉部2上。保持旋轉部2的旋轉夾盤7係真空吸附基板W之背面來保持基板W。 Next, the operation of the coating device 1 will be described with reference to a flow chart (flowchart) shown in FIG. First, in FIG. 1, a conveyance mechanism (not shown) conveys the board|substrate W to the holding rotation part 2. The rotating chuck 7 holding the rotating portion 2 vacuum-adsorbs the back surface of the substrate W to hold the substrate W.

[步驟S01:預濕處理] [Step S01: Pre-wet treatment]

控制部37係執行預濕處理,該預濕處理係指在從藥液噴嘴4吐出藥液之前,使基板W旋轉且從溶劑噴嘴3將溶劑吐出至基板W上,藉此成為溶劑已進入形成於基板W之表面的大致全部凹部H(參照圖5中的(a))的狀態,並且在該凹部H以外的基板W之表面形成溶劑膜SF的處理。 凹部H例如是接觸孔(contact hole)、穿孔(via)、空間(space)或溝渠(trench)。 The control unit 37 performs a pre-wet treatment in which the substrate W is rotated and the solvent is discharged from the solvent nozzle 3 onto the substrate W before the chemical liquid is discharged from the chemical liquid nozzle 4, whereby the solvent has entered the formation. The process of forming the solvent film SF on the surface of the substrate W other than the recess H in the state of substantially all the recesses H (see (a) in FIG. 5) on the surface of the substrate W. The recess H is, for example, a contact hole, a via, a space, or a trench.

如圖5中的(a)所示,圖3所示的溶劑噴嘴移動機構21係使溶劑噴嘴3從保持旋轉部2之側方的待機位置朝向基板W之中心部CT的上方移動。移動後,如圖5中的(b)所示,一邊以數十rpm之轉速使基板W旋轉,一邊從溶劑噴嘴3將溶劑吐出至基板W之大致中心部CT(使開閉閥V1呈開啟(ON))。如圖5中的(b)之由虛線所包圍的放大圖所示,該溶劑之吐出係進行至形成於基板W之表面的大致全部凹部H充滿溶劑為止。凹部H是否已充滿溶劑之動作條件係藉由實驗等所事先設定。 As shown in FIG. 5( a ), the solvent nozzle moving mechanism 21 shown in FIG. 3 moves the solvent nozzle 3 from the standby position on the side of the holding rotary unit 2 toward the upper side of the center portion CT of the substrate W. After the movement, as shown in FIG. 5(b), while the substrate W is rotated at a number of revolutions of several tens of rpm, the solvent is discharged from the solvent nozzle 3 to the substantially central portion CT of the substrate W (the opening and closing valve V1 is opened ( ON)). As shown in an enlarged view surrounded by a broken line in FIG. 5(b), the solvent is discharged until substantially all of the concave portions H formed on the surface of the substrate W are filled with the solvent. The operating conditions in which the recess H is filled with the solvent are set in advance by experiments or the like.

在凹部H已充滿溶劑之後,停止溶劑從溶劑噴嘴3吐出(使開閉閥V1呈關閉(OFF))。再者,在停止溶劑吐出之後,溶劑噴嘴移動機構21係使溶劑噴嘴3從基板W之中心部CT的上方朝向基板W外之待機位置移動。又,在停止溶劑吐出之後,提升基板W之轉速並以數百rpm之轉速使基板W旋轉,以將基板W上之多餘的溶劑朝向基板W外排出(參照圖5中的(c))。此後,停止基板W之旋轉。此時,如圖6之放大圖所示,凹部H係成為溶劑已進入的狀態,亦即成為溶劑(溶劑膜SF)有殘存的狀態。又,在凹部H以外的基板W之表面係形成溶劑膜SF。 After the recess H is filled with the solvent, the solvent is stopped from being discharged from the solvent nozzle 3 (the opening and closing valve V1 is turned OFF). Further, after the solvent discharge is stopped, the solvent nozzle moving mechanism 21 moves the solvent nozzle 3 from the upper side of the center portion CT of the substrate W toward the standby position outside the substrate W. After the solvent discharge is stopped, the number of revolutions of the substrate W is raised, and the substrate W is rotated at a number of revolutions of several hundred rpm to discharge excess solvent on the substrate W toward the outside of the substrate W (see (c) of FIG. 5). Thereafter, the rotation of the substrate W is stopped. At this time, as shown in the enlarged view of FIG. 6, the concave portion H is in a state in which the solvent has entered, that is, a state in which the solvent (solvent film SF) remains. Further, a solvent film SF is formed on the surface of the substrate W other than the concave portion H.

[步驟S02:沿著周緣部的環狀之藥液膜之形成(第1圈)] [Step S02: Formation of a ring-shaped chemical liquid film along the peripheral portion (first circle)]

控制部37係使基板W以第一轉速旋轉,且在停止藥液噴嘴4之移動的狀態下從位於基板W之周緣部E之上方的藥液噴嘴4將藥液吐出至基板W上。藉此,沿著基板W之周緣部E形成環狀之藥液膜CF。 The control unit 37 rotates the substrate W at the first rotation speed, and discharges the chemical liquid onto the substrate W from the chemical liquid nozzle 4 located above the peripheral edge portion E of the substrate W while the movement of the chemical liquid nozzle 4 is stopped. Thereby, the annular chemical liquid film CF is formed along the peripheral edge portion E of the substrate W.

藥液噴嘴移動機構21係使藥液噴嘴4從基板W外之待機容器10(待機位置)朝向基板W之周緣部E之上方移動(參照圖6)。該藥液噴嘴4之移動係在步驟S01之溶劑從溶劑噴嘴3吐出中移動,並事先在基板W之上方待機。在步驟S01之預濕處理後,使藥液噴嘴4下降,並將藥液噴嘴4之前端面4c與基板W之表面之間的餘隙CL設定在1.0mm以下(例如0.5mm)。再者,當餘隙CL變高時,藥液就會在基板W旋轉時從藥液噴嘴4吐出,使得形成於藥液噴嘴4與基板W之表面之間的藥液之液柱變得不安定,且恐有發生因液柱破碎而被分斷的「斷液」之虞。 The chemical liquid nozzle moving mechanism 21 moves the chemical liquid nozzle 4 from the standby container 10 (standby position) outside the substrate W toward the upper side of the peripheral edge portion E of the substrate W (see FIG. 6). The movement of the chemical liquid nozzle 4 is performed by the solvent in the step S01 being discharged from the solvent nozzle 3, and is waited in advance of the substrate W. After the pre-wetting treatment in step S01, the chemical liquid nozzle 4 is lowered, and the clearance CL between the front end surface 4c of the chemical liquid nozzle 4 and the surface of the substrate W is set to 1.0 mm or less (for example, 0.5 mm). Further, when the clearance CL becomes high, the chemical liquid is discharged from the chemical liquid nozzle 4 when the substrate W is rotated, so that the liquid column of the chemical liquid formed between the chemical liquid nozzle 4 and the surface of the substrate W does not become It is stable, and there is a fear of "breaking liquid" that has been broken due to the broken liquid column.

如圖7中的(a)所示,第一圈係形成沿著基板W之周緣部(邊緣部)E的環狀之藥液膜CF。以數十rpm之第一轉速使基板W旋轉一圈,且使藥液噴嘴4不朝向基板W之半徑方向移動而停止。在此狀態下,從位於基板W之周緣部E之上方的藥液噴嘴4吐出藥液。藉此,形成沿著基板W之周緣部E的環狀之藥液膜CF。如圖7中的(b)之箭頭G 所示,在基板W之周緣部E附近將藥液膜CF形成為螺旋狀的情況下,會發生未形成有藥液膜CF的區域。然而,由於是沿著基板W之周緣部E將藥液膜CF形成為環狀,所以可以消除未形成有藥液膜CF的區域(參照箭頭G)。為此,在基板W之周緣部E附近,可以防止斷膜等,且最終可以在基板W上形成高黏度之藥液膜CF時使膜厚成為均一。 As shown in (a) of FIG. 7, the first ring forms a ring-shaped chemical liquid film CF along the peripheral edge portion (edge portion) E of the substrate W. The substrate W is rotated once at the first rotation speed of several tens of rpm, and the chemical liquid nozzle 4 is stopped without moving toward the radial direction of the substrate W. In this state, the chemical liquid is discharged from the chemical liquid nozzle 4 located above the peripheral edge portion E of the substrate W. Thereby, a ring-shaped chemical liquid film CF is formed along the peripheral edge portion E of the substrate W. Arrow G of (b) in Fig. 7 As shown in the figure, when the chemical liquid film CF is formed in a spiral shape in the vicinity of the peripheral portion E of the substrate W, a region where the chemical liquid film CF is not formed occurs. However, since the chemical liquid film CF is formed in a ring shape along the peripheral edge portion E of the substrate W, the region where the chemical liquid film CF is not formed can be eliminated (see the arrow G). Therefore, in the vicinity of the peripheral portion E of the substrate W, it is possible to prevent film breakage and the like, and finally, when the high-viscosity chemical liquid film CF is formed on the substrate W, the film thickness is made uniform.

再者,可針對圖7中的(b)之箭頭G之未形成有藥液膜CF的區域考慮如下的消除方法。所謂該方法係指一邊在基板W外從藥液噴嘴4吐出藥液,一邊使藥液噴嘴4朝向基板W之上方移動,以在基板W之周緣部E形成藥液膜CF的方法。然而,在該方法中,例如當橫越基板W之周緣部E之內外的境界時,例如從藥液噴嘴4所吐出的藥液之液柱就會變得不安定,此後,恐有無法良好地形成螺旋狀之藥液膜CF之虞。又,恐有藥液附著於基板W之側面,且造成髒汙等原因之虞。又,當朝向基板W外吐出時,就會浪費藥液。然而,由於是沿著周緣部E將藥液膜CF形成為環狀,所以可以防止此等問題。 Further, the following elimination method can be considered for the region of the arrow G of FIG. 7 (b) in which the chemical liquid film CF is not formed. This method is a method of forming the chemical liquid film CF on the peripheral edge portion E of the substrate W while moving the chemical liquid nozzle 4 toward the upper side of the substrate W while discharging the chemical liquid from the chemical liquid nozzle 4 outside the substrate W. However, in this method, for example, when the boundary between the inside and the outside of the peripheral portion E of the substrate W is traversed, for example, the liquid column of the chemical liquid discharged from the chemical liquid nozzle 4 becomes unstable, and thereafter, it may not be good. The ground forms a spiral of the chemical liquid film CF. Further, there is a fear that the chemical liquid adheres to the side surface of the substrate W and causes contamination or the like. Moreover, when discharging to the outside of the substrate W, the chemical liquid is wasted. However, since the chemical liquid film CF is formed in a ring shape along the peripheral edge portion E, such problems can be prevented.

步驟S02至步驟S04中的基板W之第一轉速係設定成藥液不會從基板W之周緣部E溢出的程度。又,第一轉速係可變的。 The first number of rotations of the substrate W in the step S02 to the step S04 is set such that the chemical liquid does not overflow from the peripheral portion E of the substrate W. Also, the first rotational speed is variable.

[步驟S03:螺旋狀之藥液膜之形成(第二圈以後)] [Step S03: Formation of a spiral liquid film (after the second lap)]

在步驟S02之第一圈中係不使藥液噴嘴4移動而停止,並沿著周緣部E形成有藥液膜CF。第二圈以後係使藥液噴嘴4移動以將藥液膜CF形成為螺旋狀。亦即,控制部37係使基板W以第一轉速旋轉,且使位於基板W之上方的藥液噴嘴4從基板W之周緣部E朝向基板W之中心部CT沿著基板W之半徑方向移動。一邊進行此等,一邊從藥液噴嘴4將藥液吐出至基板W上。藉此,形成螺旋狀之藥液膜CF(參照圖8)。再者,圖8之螺旋的實線係顯示本步驟的藥液噴嘴4之軌跡。圖8之一點鏈線係顯示步驟S02的藥液噴嘴4之軌跡。 In the first cycle of step S02, the chemical liquid nozzle 4 is stopped without moving, and the chemical liquid film CF is formed along the peripheral edge portion E. After the second lap, the chemical liquid nozzle 4 is moved to form the chemical liquid film CF into a spiral shape. In other words, the control unit 37 rotates the substrate W at the first rotation speed, and moves the chemical liquid nozzle 4 located above the substrate W from the peripheral edge portion E of the substrate W toward the central portion CT of the substrate W along the radial direction of the substrate W. . While doing this, the chemical liquid is discharged from the chemical liquid nozzle 4 onto the substrate W. Thereby, a spiral drug solution CF is formed (see FIG. 8). Further, the solid line of the spiral of Fig. 8 shows the trajectory of the liquid chemical nozzle 4 of this step. A dot chain line of Fig. 8 shows the trajectory of the liquid medicine nozzle 4 of step S02.

步驟S02、S03的藥液膜CF之形成亦可將塗布範圍分區並以如下的條件來進行。亦即,在使藥液噴嘴4從基板W之周緣部E移動至中心部CT時,例如一邊使藥液噴嘴4之前端面4c與基板W之表面之間的餘隙CL、藥液噴嘴4之移動速度、以及基板W之轉速產生變化,一邊執行藥液之吐出。藉此,可以效率佳地使藥液遍及於凹部H等的凹凸。 The formation of the chemical solution film CF in steps S02 and S03 can also be performed by partitioning the coating range and under the following conditions. In other words, when the chemical liquid nozzle 4 is moved from the peripheral edge portion E of the substrate W to the central portion CT, for example, the clearance CL between the front end surface 4c of the chemical liquid nozzle 4 and the surface of the substrate W, and the liquid chemical nozzle 4 are used. The movement speed and the rotation speed of the substrate W are changed, and the discharge of the chemical liquid is performed. Thereby, the chemical liquid can be efficiently spread over the unevenness of the concave portion H or the like.

圖9係顯示基板W上的塗布範圍之區域的俯視圖。區域係基於來自基板W之中心部CT的藥液噴嘴4之位置所決定,且可從基板W之周緣部E側分為第一區Z1至第五區Z5、以及第六區(核心)Z6。再者,在圖示之方面,圖9 之第一區Z1至第六區Z6係顯示粗略的範圍。圖10係顯示各個第一區Z1至第六區Z6之塗布條件的示意圖。圖10之項目「噴嘴移動距離」係顯示從基板W之中心部CT起算的距離(mm)。基板W係假設使用直徑300mm的基板。例如,第一區Z1之從基板W之中心部CT起算的距離為143mm,且不進行藥液噴嘴4之移動。亦即,第一區Z1係顯示步驟S02的環狀之藥液膜CF之形成。 Fig. 9 is a plan view showing a region of a coating range on the substrate W. The region is determined based on the position of the chemical liquid nozzle 4 from the central portion CT of the substrate W, and can be divided into the first region Z1 to the fifth region Z5 and the sixth region (core) Z6 from the peripheral portion E side of the substrate W. . Furthermore, in the aspect of the figure, Figure 9 The first zone Z1 to the sixth zone Z6 show a rough range. Fig. 10 is a schematic view showing coating conditions of the respective first to sixth zones Z1 to Z6. The item "nozzle moving distance" of Fig. 10 shows the distance (mm) from the center portion CT of the substrate W. The substrate W is assumed to use a substrate having a diameter of 300 mm. For example, the distance from the center portion CT of the substrate W of the first zone Z1 is 143 mm, and the movement of the chemical liquid nozzle 4 is not performed. That is, the first zone Z1 shows the formation of the annular liquid chemical film CF of the step S02.

首先,參照圖11來針對藥液噴嘴4之前端面4c與基板W之間的餘隙CL加以說明。在形成螺旋狀及環狀之藥液膜CF時,假設有藥液噴嘴4位於比基板W之周緣部E側的位置(例如符號PS1)更靠近基板W之中心部CT側(例如符號PS2)的時候。在此情況下,將餘隙CL形成為比周緣部E側之位置(符號PS1)中的餘隙CL更大。亦即,藥液噴嘴4越位於比基板W之周緣部E還靠中心部CT側,就越加大餘隙CL。 First, the clearance CL between the front end surface 4c of the chemical liquid nozzle 4 and the substrate W will be described with reference to FIG. When the spiral and annular chemical liquid film CF is formed, it is assumed that the chemical liquid nozzle 4 is located closer to the center portion CT side of the substrate W than the position (for example, symbol PS1) on the peripheral portion E side of the substrate W (for example, symbol PS2). when. In this case, the clearance CL is formed to be larger than the clearance CL in the position (symbol PS1) on the side of the peripheral portion E. In other words, the closer the chemical liquid nozzle 4 is to the side of the center portion CT than the peripheral portion E of the substrate W, the larger the clearance CL is.

在基板W之周緣部E(第一區Z1及第二區Z2)係將餘隙CL設為例如0.5mm。與藥液噴嘴4之移動一起,亦即依藥液噴嘴4所位處的第一區Z1至第六區Z6之每一區,慢慢地加大餘隙CL。在基板W之中心部CT(第六區Z6)係將餘隙CL設為例如3.0mm。 The clearance CL is set to, for example, 0.5 mm in the peripheral portion E (the first region Z1 and the second region Z2) of the substrate W. Together with the movement of the liquid medicine nozzle 4, that is, each of the first zone Z1 to the sixth zone Z6 where the chemical liquid nozzle 4 is located, the clearance CL is gradually increased. The clearance CL is set to, for example, 3.0 mm in the center portion CT (sixth region Z6) of the substrate W.

在比基板W之中心部CT側的位置更靠近周緣部E側的位置,相對於藥液噴嘴4的基板W之相對的轉速會變快。為此,在藥液著液於基板W時,施加於藥液之往旋轉方向之力的作用會變大,且容易引起因藥液破碎而被分斷的斷液。在藥液噴嘴4位於周緣部E側時,可以藉由減小餘隙CL來防止斷液。又,在藥液噴嘴4位於中心部CT時,會形成藥液之液池PD。可以藉由加大餘隙CL來抑制藥液附著於藥液噴嘴4。 At a position closer to the peripheral edge portion E than the position on the CT portion of the center portion of the substrate W, the relative rotational speed with respect to the substrate W of the chemical liquid nozzle 4 is increased. For this reason, when the chemical liquid is immersed in the substrate W, the force applied to the direction of rotation of the chemical liquid becomes large, and the liquid breakage which is broken by the chemical liquid is likely to occur. When the chemical liquid nozzle 4 is located on the side of the peripheral portion E, the liquid leakage can be prevented by reducing the clearance CL. Further, when the chemical liquid nozzle 4 is located at the center portion CT, the liquid pool PD of the chemical liquid is formed. It is possible to suppress the adhesion of the chemical solution to the chemical liquid nozzle 4 by increasing the clearance CL.

其次,針對基板W之轉速(第一轉速)加以說明。在形成螺旋狀及環狀之藥液膜CF時,假設有藥液噴嘴4位於比基板W之周緣部E側的位置(例如圖11之符號PS1)更靠近基板W之中心部CT側(例如圖11之符號PS2)的時候。在此情況下,將相對於藥液噴嘴4的基板W之轉速形成為比位於周緣部E側(符號PS1)時的轉速更快。亦即,藥液噴嘴4越位於比基板W之周緣部E還靠中心部CT側,就越加快轉速。 Next, the rotation speed (first rotation speed) of the substrate W will be described. When the spiral and annular chemical liquid film CF is formed, it is assumed that the chemical liquid nozzle 4 is located closer to the center portion CT side of the substrate W than the position on the peripheral edge portion E side of the substrate W (for example, the symbol PS1 of FIG. 11) (for example) When the symbol of Figure 11 is PS2). In this case, the rotational speed of the substrate W with respect to the chemical liquid nozzle 4 is formed to be faster than the rotational speed at the side of the peripheral portion E (symbol PS1). In other words, the more the chemical liquid nozzle 4 is located closer to the center portion CT than the peripheral portion E of the substrate W, the faster the rotation speed is increased.

在基板W之周緣部E(第一區Z1及第二區Z2)係將轉速設為例如13rpm。與藥液噴嘴4之移動一起加大轉速。在基板W之中心部CT(第六區Z6)係將轉速設為例如40rpm。 The peripheral speed portion E (the first zone Z1 and the second zone Z2) of the substrate W is set to, for example, 13 rpm. The rotation speed is increased together with the movement of the liquid medicine nozzle 4. The center portion CT (sixth region Z6) of the substrate W sets the number of revolutions to, for example, 40 rpm.

在比基板W之中心部CT側的位置更靠近周緣部E側的位置,相對於藥液噴嘴4的基板W之相對的轉速會變快。為此,在藥液著液於基板W時,施加於藥液之往旋轉方向之力的作用會變大,且容易引起因藥液破碎而被分斷的斷液。在藥液噴嘴4位於周緣部E側時,可以減慢基板W之轉速。藉此,可以防止從藥液噴嘴4所吐出的藥液被分斷的斷液。又,在藥液噴嘴4位於中心部CT時係加快基板W之轉速。藉此來防止吐出過多的藥液。 At a position closer to the peripheral edge portion E than the position on the CT portion of the center portion of the substrate W, the relative rotational speed with respect to the substrate W of the chemical liquid nozzle 4 is increased. For this reason, when the chemical liquid is immersed in the substrate W, the force applied to the direction of rotation of the chemical liquid becomes large, and the liquid breakage which is broken by the chemical liquid is likely to occur. When the chemical liquid nozzle 4 is located on the side of the peripheral portion E, the number of revolutions of the substrate W can be slowed down. Thereby, it is possible to prevent the liquid medicine discharged from the chemical liquid nozzle 4 from being broken. Further, when the chemical liquid nozzle 4 is located at the center portion CT, the number of revolutions of the substrate W is increased. This prevents excessive discharge of the drug solution.

再者,藥液之吐出速度(吐出速率、單位:ml/s)係相對於基板W之轉速使用不會斷液(可以承受斷液)的最低之流速。藉由使用如此的吐出速度就可以更節約藥液。 Further, the discharge speed of the chemical liquid (discharge rate, unit: ml/s) is the lowest flow rate with which the liquid is not broken (can be subjected to liquid breaking) with respect to the rotational speed of the substrate W. By using such a discharge speed, the liquid medicine can be saved more.

其次,針對藥液噴嘴4之移動速度加以說明。如圖9所示,由於在基板W之周緣部E側的塗布範圍較寬,所以藥液之吐出時間會變長。另一方面,由於在中心部CT側的塗布範圍較窄,所以藥液之吐出時間會變短。於是,在形成螺旋狀之藥液膜CF時,假設有藥液噴嘴4位於比基板W之周緣部E側的位置(例如圖11之符號PS1)更靠近基板W之中心部CT側(例如圖11之符號PS2)的時候。在此情況下,將相對於藥液噴嘴4的基板W之移動速度形成為比位於周緣部E側(符號PS1)時的藥液噴嘴4之移動速度更快。亦即,藥液噴嘴4越位於比基板W之周緣部E還靠中心部CT側,就越加快藥液噴嘴4之移動速度。可以效率 佳地形成螺旋狀之藥液膜CF。 Next, the moving speed of the chemical liquid nozzle 4 will be described. As shown in FIG. 9, since the application range on the peripheral edge portion E side of the substrate W is wide, the discharge time of the chemical liquid becomes long. On the other hand, since the coating range on the CT side of the center portion is narrow, the discharge time of the chemical liquid is shortened. Then, when the spiral chemical liquid film CF is formed, it is assumed that the chemical liquid nozzle 4 is located closer to the center portion CT side of the substrate W than the position on the peripheral edge portion E side of the substrate W (for example, the symbol PS1 of FIG. 11) (for example, When the symbol of 11 is PS2). In this case, the moving speed of the substrate W with respect to the chemical liquid nozzle 4 is formed to be faster than the moving speed of the chemical liquid nozzle 4 at the side of the peripheral portion E (symbol PS1). In other words, the closer the chemical liquid nozzle 4 is to the center portion CT side than the peripheral edge portion E of the substrate W, the faster the moving speed of the chemical liquid nozzle 4 is. Efficiency The spiral forms a liquid chemical film CF.

又,螺旋狀之藥液膜CF中之各圈的藥液膜CF(包含第一圈的螺旋狀之藥液膜CF)較佳是在基板W之半徑方向不與鄰圈的藥液膜CF產生間隙地互為疊合。圖12中的(a)係較佳之例。例如第n-1圈的藥液膜CF與第n圈的藥液膜CF互為疊合。另一方面,圖12中的(b)係不佳之例。例如第n-1圈的藥液膜CF與第n圈的藥液膜CF分離,而產生間隙。當各圈的藥液膜CF與鄰圈的藥液膜CF互為產生間隙時,即便在後面所述的步驟S05中,使基板W高速旋轉來擴展後面所述的液池PD之藥液,仍有避開該間隙、或避開存在於該間隙之凹部H而流動的情況。為此,可以藉由不產生該間隙來良好地擴展液池PD之藥液。更且,只要互為疊合,就可以更確實良好地擴展液池PD之藥液。 Further, the liquid chemical film CF (including the first spiral-shaped liquid chemical film CF) in each of the spiral chemical liquid films CF is preferably not in the radial direction of the substrate W with the chemical liquid film CF of the adjacent ring. The gaps are overlapped with each other. (a) in Fig. 12 is a preferred example. For example, the chemical liquid film CF of the n-1th circle and the chemical liquid film CF of the nth circle overlap each other. On the other hand, (b) in Fig. 12 is a poor example. For example, the chemical liquid film CF of the n-1th turn is separated from the chemical liquid film CF of the nth turn, and a gap is generated. When a gap is formed between the chemical liquid film CF of each turn and the chemical liquid film CF of the adjacent ring, even in the step S05 described later, the substrate W is rotated at a high speed to expand the liquid medicine of the liquid pool PD described later. There is still a case where the gap is avoided or the recess H existing in the gap is prevented from flowing. For this reason, the liquid medicine of the liquid pool PD can be well expanded by not generating the gap. Moreover, as long as they overlap each other, the liquid medicine of the liquid pool PD can be expanded more surely.

[步驟S04:藥液之液池之形成] [Step S04: Formation of liquid pool of liquid medicine]

假設一邊將藥液膜CF形成為螺旋狀,一邊使藥液噴嘴4之中心到達中心部CT之上方。此後,亦即在形成螺旋狀之藥液膜CF之後,控制部37係更進一步從藥液噴嘴4將藥液吐出至基板W之大致中心部CT。藉此,會在基板W之中心部CT形成藥液之液池(槳狀部;paddle)PD(參照圖13)。用以形成液池PD的藥液之吐出係在基板W之中心部之上方停止藥液噴嘴4之移動的狀態下進行。液池PD係一邊使基板W旋轉一邊形成。藥液之液池PD係形成為比 螺旋狀之藥液膜CF更高。液池PD係形成於螺旋狀之藥液膜CF上。再者,藉由改變液池PD之高度或量就可以調整後面所述的步驟S05之後的藥液膜CF之厚度。 It is assumed that the center of the chemical liquid nozzle 4 reaches the upper side of the center portion CT while forming the chemical liquid film CF in a spiral shape. Thereafter, after the spiral chemical liquid film CF is formed, the control unit 37 further discharges the chemical liquid from the chemical liquid nozzle 4 to the substantially central portion CT of the substrate W. Thereby, a liquid pool (paddle) PD of the chemical liquid is formed in the center portion CT of the substrate W (see FIG. 13). The discharge of the chemical liquid for forming the liquid pool PD is performed in a state where the movement of the chemical liquid nozzle 4 is stopped above the center portion of the substrate W. The liquid pool PD is formed while rotating the substrate W. The liquid pool PD of the liquid is formed as a ratio The spiral liquid film CF is higher. The liquid pool PD is formed on the spiral liquid chemical film CF. Further, by changing the height or amount of the liquid pool PD, the thickness of the chemical liquid film CF after the step S05 described later can be adjusted.

在形成藥液之液池PD之後,停止藥液之吐出。之後,在使藥液噴嘴4上升之後,藥液噴嘴4係水平移動並退避至待機容器10。此時基板W亦以事先所設定的第一轉速來旋轉。 After the liquid pool PD of the chemical liquid is formed, the discharge of the chemical liquid is stopped. Thereafter, after the chemical liquid nozzle 4 is raised, the chemical liquid nozzle 4 is horizontally moved and retracted to the standby container 10. At this time, the substrate W is also rotated at the first rotational speed set in advance.

[步驟S05:基板之高速旋轉] [Step S05: High-speed rotation of the substrate]

在形成藥液之液池PD,且使藥液噴嘴4上升或返回至待機容器10之後,控制部37係以比用以將藥液膜CF形成為螺旋狀之第一轉速更快的第二轉速使基板W旋轉。藉此,如圖14中的(a)之虛線箭頭所示,擴展液池PD之藥液以覆蓋環狀及螺旋狀之藥液膜CF。液池PD之藥液係沿著螺旋狀之藥液膜CF均等地擴展。又,在環狀及螺旋狀之藥液膜CF之表面的凹凸係用液池PD之藥液來成為平坦,且可以使膜厚成為均一。又,能藉由基板W之第二轉速的旋轉(高速旋轉)來將凹部H之溶劑置換成藥液(參照圖14中的(b)之放大圖)。再者,第二轉速係事先所設定,例如為750rpm以上。 After the liquid pool PD of the chemical liquid is formed and the chemical liquid nozzle 4 is raised or returned to the standby container 10, the control portion 37 is second faster than the first rotational speed for forming the chemical liquid film CF into a spiral shape. The rotation speed causes the substrate W to rotate. Thereby, as shown by the dotted arrow in (a) of FIG. 14, the liquid medicine of the liquid pool PD is expanded to cover the annular and spiral liquid chemical film CF. The liquid medicine of the liquid pool PD is equally expanded along the spiral liquid chemical film CF. Moreover, the chemical solution of the unevenness liquid pool PD on the surface of the annular and spiral chemical liquid film CF is flat, and the film thickness can be made uniform. Moreover, the solvent of the concave portion H can be replaced with the chemical liquid by the rotation (high-speed rotation) of the second rotation speed of the substrate W (see an enlarged view of (b) in FIG. 14). Further, the second number of rotations is set in advance, and is, for example, 750 rpm or more.

保持旋轉部2係在以第二轉速使基板W旋轉並用液池PD之藥液覆蓋螺旋狀等的藥液膜CF之後,上下調整第二 轉速以使基板W旋轉,且進行膜厚之調整。藉此,在形成有凹部H並具有凹凸的基板W上沒有斷膜,且可以形成如圖14中的(b)所示之膜厚均一且調整至目標之膜厚後的藥液膜CF。 The holding rotary unit 2 adjusts the second and second adjustments after the substrate W is rotated at the second rotation speed and the chemical liquid film CF such as a spiral is covered with the chemical liquid of the liquid pool PD. The rotation speed is used to rotate the substrate W, and the film thickness is adjusted. Thereby, the substrate W having the concave portion H and having the unevenness is not broken, and the chemical liquid film CF having a uniform film thickness as shown in FIG. 14(b) and adjusted to the target film thickness can be formed.

在藉由以上之步驟形成藥液膜CF之後,從未圖示的噴嘴吐出溶劑,以執行除掉形成於基板W之周緣部E的藥液膜CF的EBR(Edge Bead Removal;邊緣球狀物去除)處理(亦稱為邊緣沖洗(edge rinse)處理),或執行吐出洗淨液來洗淨基板W之背面的背面沖洗處理。此後,在基板W之旋轉已停止的狀態下,保持旋轉部2係解除基板W之保持。未圖示的基板搬運機構係從保持旋轉部2搬出基板W。 After the chemical liquid film CF is formed by the above steps, the solvent is ejected from a nozzle (not shown) to perform EBR (Edge Bead Removal) which removes the chemical liquid film CF formed on the peripheral portion E of the substrate W. The treatment is removed (also referred to as edge rinse treatment), or the backside rinse treatment is performed by discharging the cleaning liquid to clean the back surface of the substrate W. Thereafter, in a state where the rotation of the substrate W is stopped, the holding of the rotating portion 2 releases the holding of the substrate W. The substrate transfer mechanism (not shown) carries out the substrate W from the holding rotary unit 2 .

依據本實施例,則在基板W上形成藥液之液池PD之前,形成螺旋狀之藥液膜CF。液池PD之藥液會與螺旋狀之藥液膜CF好好地溶合為一。為此,在使基板W旋轉來擴展液池PD之藥液以覆蓋螺旋狀之藥液膜CF時,會使液池PD之藥液良好地擴展。又,在液池PD之藥液擴展時,能使螺旋狀之藥液膜CF的表面之凹凸成為平坦。藉由此等就可以防止圖16中的(a)之斷膜M和圖16中的(b)之凹漥N,且可以在基板W上形成高黏度之藥液膜CF時使膜厚成為均一。 According to the present embodiment, the spiral chemical liquid film CF is formed before the liquid pool PD of the chemical liquid is formed on the substrate W. The liquid medicine of the liquid pool PD is well fused with the spiral liquid chemical film CF. For this reason, when the substrate W is rotated to expand the liquid medicine of the liquid pool PD to cover the spiral liquid chemical film CF, the liquid medicine of the liquid pool PD is favorably expanded. Further, when the liquid medicine of the liquid pool PD is expanded, the unevenness of the surface of the spiral chemical liquid film CF can be made flat. By this, it is possible to prevent the film M of (a) in FIG. 16 and the pit N of (b) in FIG. 16 and to form a film of high viscosity liquid film CF on the substrate W. Uniform.

又,在基板W之中心部形成液池PD之後,當形成螺 旋狀之藥液膜CF時,液池PD之藥液會乾燥。在此情況下,在以第二轉速(高速旋轉)來使圓形基板W旋轉時,液池PD不會良好地擴展,而藥液膜CF會在比圓形基板之周緣部E更靠近中心部CT隆起。然而,由於是在形成螺旋狀之藥液膜CF之後才形成液池PD,所以不會使液池PD之藥液乾燥,而可以良好地擴展液池PD。又由於可以良好地擴展藥液,所以不會為了擴展而吐出多餘的藥液。為此,可以節約藥液。 Further, after the liquid pool PD is formed at the center portion of the substrate W, when the snail is formed When the film of the liquid film CF is rotated, the liquid medicine of the liquid pool PD is dried. In this case, when the circular substrate W is rotated at the second rotation speed (high-speed rotation), the liquid pool PD does not spread well, and the chemical film CF is closer to the center than the peripheral portion E of the circular substrate. The CT is raised. However, since the liquid pool PD is formed after the formation of the spiral chemical liquid film CF, the liquid medicine PD is not dried, and the liquid pool PD can be well expanded. Further, since the chemical solution can be spread well, no excess chemical solution is discharged for the purpose of expansion. For this reason, the liquid medicine can be saved.

再者,當不形成藥液之液池PD,而以第二轉速(高速旋轉)使圓形基板旋轉時,就會殘留螺旋狀之藥液膜CF的螺旋圖案。在形成螺旋之藥液膜CF之後,形成藥液之液池PD,並擴展液池PD之藥液。為此,不會留下螺旋圖案而可以使膜厚成為均一。 Further, when the liquid pool PD of the chemical liquid is not formed and the circular substrate is rotated at the second rotation speed (high-speed rotation), the spiral pattern of the spiral chemical liquid film CF remains. After forming the spiral liquid chemical film CF, the liquid pool PD of the chemical liquid is formed, and the liquid medicine of the liquid pool PD is expanded. For this reason, the film thickness can be made uniform without leaving a spiral pattern.

又,在形成螺旋狀之藥液膜CF時,藥液噴嘴4係從基板W之周緣部E朝向基板W之中心部CT沿著基板W之半徑方向移動。在形成螺旋狀之藥液膜CF之後,藥液噴嘴4係位於基板W之中心部之上方。為此,藥液噴嘴4係可以直接進行形成液池PD的動作。亦即,可以效率佳地形成藥液之液池PD。 Further, when the spiral chemical liquid film CF is formed, the chemical liquid nozzle 4 moves from the peripheral edge portion E of the substrate W toward the central portion CT of the substrate W in the radial direction of the substrate W. After the spiral drug solution CF is formed, the drug solution nozzle 4 is positioned above the center portion of the substrate W. For this reason, the chemical liquid nozzle 4 can directly perform the operation of forming the liquid pool PD. That is, the liquid pool PD of the chemical liquid can be formed efficiently.

又,執行預濕處理,該預濕處理係指在從藥液噴嘴4吐出藥液之前,使基板W旋轉,且從溶劑噴嘴3將溶劑吐 出至基板W上,藉此在基板W上形成溶劑膜SF的處理。在欲以無預濕處理來形成螺旋狀之藥液膜CF時,吐出的藥液就會在藥液噴嘴4之吐出口4a附近成塊,而有的情況不易使藥液附著於基板W。然而,藉由預濕處理就可以容易使藥液附著於基板W。又,藥液容易在基板W上之溶劑膜SF所存在的部分流動。 Further, the pre-wet treatment is performed, and the substrate W is rotated before the chemical liquid is discharged from the chemical liquid nozzle 4, and the solvent is spit from the solvent nozzle 3. The process of forming the solvent film SF on the substrate W by discharging onto the substrate W. When the spiral chemical liquid film CF is to be formed without pre-wetting treatment, the discharged chemical liquid is agglomerated in the vicinity of the discharge port 4a of the chemical liquid nozzle 4, and in some cases, the chemical liquid is less likely to adhere to the substrate W. However, the chemical solution can be easily attached to the substrate W by the pre-wetting treatment. Further, the chemical liquid easily flows in the portion where the solvent film SF on the substrate W exists.

又,預濕處理係成為溶劑已進入形成於基板W之凹部H內的狀態。由於溶劑已進入凹部H,所以容易進行與藥液之置換。為此,可以防止往凹部H的藥液之填埋不足(參照圖15)。 Further, the pre-wet treatment is in a state in which the solvent has entered the concave portion H formed in the substrate W. Since the solvent has entered the concave portion H, replacement with the chemical liquid is easy. Therefore, it is possible to prevent the filling of the chemical liquid in the concave portion H (see FIG. 15).

本發明並不被限於上述實施形態,而可以如下述地進行變化實施。 The present invention is not limited to the above embodiment, and can be modified as follows.

(1)在上面所述的實施例中,如圖2中的(b)所示,藥液噴嘴4之吐出口4a為長方形。藉此,可以增加旋轉一圈所塗布的面積。為此,能夠縮短吐出時間以及以低旋轉進行使液柱安定化之狀態的塗布動作。然而,吐出口4a並未被限定於長方形。例如,吐出口4a亦可為多角形、正方形等的正多角形、橢圓及圓形。 (1) In the above-described embodiment, as shown in (b) of Fig. 2, the discharge port 4a of the chemical liquid nozzle 4 has a rectangular shape. Thereby, the area coated by one rotation can be increased. For this reason, it is possible to shorten the discharge time and the coating operation in a state in which the liquid column is stabilized with low rotation. However, the discharge port 4a is not limited to a rectangular shape. For example, the discharge port 4a may be a regular polygon, an ellipse or a circle having a polygonal shape, a square shape or the like.

(2)在上面所述的實施例及變化例(1)中,在形成螺旋狀之藥液膜CF時,藥液噴嘴4係從基板W之周緣部E朝向 基板W之中心部CT沿著基板W之半徑方向移動。然而,亦可使其逆向移動。亦即,藥液噴嘴4亦可從基板W之中心部CT朝向基板W之周緣部E沿著基板W之半徑方向移動。 (2) In the above-described embodiment and modification (1), when the spiral drug solution CF is formed, the drug solution nozzle 4 is oriented from the peripheral portion E of the substrate W. The central portion CT of the substrate W moves in the radial direction of the substrate W. However, it can also be moved in the reverse direction. In other words, the chemical liquid nozzle 4 can also move in the radial direction of the substrate W from the central portion CT of the substrate W toward the peripheral edge portion E of the substrate W.

在此情況下,在將藥液膜CF形成為螺旋狀之後,沿著周緣部E形成環狀之藥液膜CF(最終圈)。此後,使藥液噴嘴4朝向基板W之中心部CT的上方移動,以在基板W之中心部CT上形成液池PD。再者,為了形成液池PD,亦可準備與藥液噴嘴4不同(第二)的藥液噴嘴(未圖示)。藉此,可以在形成螺旋狀及環狀之藥液膜CF之後,從事先朝向中心部CT之上方移動的第二藥液噴嘴吐出藥液,並不空出時間地立即形成液池PD。 In this case, after the chemical liquid film CF is formed into a spiral shape, a ring-shaped chemical liquid film CF (final ring) is formed along the peripheral edge portion E. Thereafter, the chemical liquid nozzle 4 is moved toward the upper side of the center portion CT of the substrate W to form the liquid pool PD on the central portion CT of the substrate W. Further, in order to form the liquid pool PD, a chemical liquid nozzle (not shown) different from the chemical liquid nozzle 4 (not shown) may be prepared. Thereby, after the spiral and annular chemical liquid film CF is formed, the chemical liquid can be discharged from the second chemical liquid nozzle that has moved upward toward the center portion CT in advance, and the liquid pool PD is immediately formed without vacancy.

在形成液池PD之後,使基板W高速旋轉,藉此擴展液池PD之藥液以覆蓋螺旋狀及環狀之藥液膜CF。再者,在本變化例之情況下,餘隙CL、基板W之轉速、以及藥液噴嘴4之移動速度等的條件係與上面所述的實施例相同。 After the liquid pool PD is formed, the substrate W is rotated at a high speed, thereby expanding the liquid medicine of the liquid pool PD to cover the spiral and annular chemical liquid film CF. Further, in the case of the present modification, the conditions of the clearance CL, the rotational speed of the substrate W, and the moving speed of the chemical liquid nozzle 4 are the same as those of the above-described embodiment.

(3)在上面所述的實施例及各個變化例中,使藥液噴嘴4之前端面4c與基板W之表面之間的餘隙CL、基板W之轉速、以及藥液噴嘴4之移動速度等的條件產生變化,以形成螺旋狀及環狀之藥液膜CF。然而,亦可依需要不使其 中任一個條件產生變化。亦即,亦可伴隨藥液噴嘴4之移動使餘隙CL、基板W之轉速、以及藥液噴嘴4之移動速度的至少一個產生變化,以形成螺旋狀及環狀之藥液膜CF。 (3) In the above-described embodiment and each modification, the clearance CL between the front end surface 4c of the chemical liquid nozzle 4 and the surface of the substrate W, the rotation speed of the substrate W, and the moving speed of the liquid chemical nozzle 4 are made. The conditions change to form a spiral and annular liquid chemical film CF. However, you can also not make it as needed Any one of the conditions changes. That is, at least one of the clearance CL, the rotation speed of the substrate W, and the moving speed of the chemical liquid nozzle 4 may be changed in accordance with the movement of the chemical liquid nozzle 4 to form a spiral and annular chemical liquid film CF.

(4)在上面所述的實施例及各個變化例中,作為高黏度之藥液係使用樹脂。然而,亦可使用光阻(photoresist)等的阻劑(resist)、接著劑、或SOG(Spin on Glass;旋塗玻璃)等的平坦化膜形成用藥液。 (4) In the examples and the respective modifications described above, a resin is used as the high viscosity liquid chemical system. However, a resisting agent such as a photoresist, an adhesive, or a flattening film forming chemical liquid such as SOG (Spin on Glass) may be used.

(5)在上面所述的實施例及各個變化例中,保持旋轉部2係使基板W旋轉。然而,溶劑噴嘴移動機構21亦可使溶劑噴嘴3相對於基板W繞旋轉軸AX1旋轉。又,藥液噴嘴移動機構23亦可使藥液噴嘴4相對於基板W繞旋轉軸AX1旋轉。 (5) In the above-described embodiment and each of the modifications, the holding rotating portion 2 rotates the substrate W. However, the solvent nozzle moving mechanism 21 can also rotate the solvent nozzle 3 with respect to the substrate W about the rotation axis AX1. Further, the chemical liquid nozzle moving mechanism 23 can also rotate the chemical liquid nozzle 4 with respect to the substrate W about the rotation axis AX1.

(6)在上面所述的實施例及各個變化例中,溶劑噴嘴移動機構21係使溶劑噴嘴3移動,藥液噴嘴移動機構23係使藥液噴嘴4移動。然而,保持旋轉部2亦可使基板W相對於溶劑噴嘴3或藥液噴嘴4移動。 (6) In the above-described embodiment and each modification, the solvent nozzle moving mechanism 21 moves the solvent nozzle 3, and the chemical liquid nozzle moving mechanism 23 moves the chemical liquid nozzle 4. However, the holding of the rotating portion 2 can also move the substrate W relative to the solvent nozzle 3 or the chemical liquid nozzle 4.

(7)在上面所述的實施例及各個變化例中,液池PD係形成於螺旋狀之藥液膜CF上。然而,亦可使螺旋狀之藥液膜CF在中心部CT之前方停住,並使藥液從已移動至中 心部CT之上方的藥液噴嘴4吐出以形成液池PD。亦即,液池PD亦可不形成於螺旋狀之藥液膜CF上,而是直接形成於基板W上。 (7) In the above-described embodiment and each modification, the liquid pool PD is formed on the spiral liquid chemical film CF. However, the spiral liquid film CF can also be stopped before the center portion CT, and the liquid medicine can be moved from the middle to the middle. The liquid chemical nozzle 4 above the heart CT is discharged to form a liquid pool PD. That is, the liquid pool PD may not be formed on the spiral liquid chemical film CF, but may be formed directly on the substrate W.

Claims (8)

一種塗布方法,係用以將300cP以上之高黏度藥液供給至圓形基板上並在前述圓形基板上形成藥液膜;前述塗布方法係具備以下步驟:使前述圓形基板以第一轉速旋轉,且一邊使位於前述圓形基板之上方的藥液噴嘴朝向前述圓形基板之半徑方向移動,一邊從前述藥液噴嘴將藥液吐出至前述圓形基板上,藉此於前述圓形基板之大致整面形成螺旋狀之藥液膜;在形成前述螺旋狀之藥液膜之後,從前述藥液噴嘴將藥液吐出至前述圓形基板之中心部,藉此在前述圓形基板之中心部形成藥液之液池;以及在形成前述藥液之液池之後,以比前述第一轉速更快之第二轉速使前述圓形基板旋轉,藉此來擴展前述液池之藥液以覆蓋前述螺旋狀之藥液膜從而使前述螺旋狀之藥液膜的表面平坦。 A coating method for supplying a high-viscosity chemical solution of 300 cP or more to a circular substrate and forming a chemical liquid film on the circular substrate; the coating method has the following steps: the circular substrate is rotated at a first speed Rotating and moving the chemical liquid nozzle located above the circular substrate toward the radial direction of the circular substrate, and discharging the chemical solution from the chemical liquid nozzle onto the circular substrate, thereby forming the circular substrate a spiral-shaped chemical liquid film is formed on substantially the entire surface; after the spiral liquid chemical film is formed, the chemical liquid is discharged from the chemical liquid nozzle to a central portion of the circular substrate, thereby being at the center of the circular substrate a liquid pool for forming a chemical liquid; and, after forming the liquid pool of the chemical liquid, rotating the circular substrate at a second rotation speed faster than the first rotation speed, thereby expanding the liquid medicine of the liquid pool to cover the foregoing The spiral drug solution film flattens the surface of the aforementioned spiral drug solution. 如請求項1所記載之塗布方法,其中在形成前述螺旋狀之藥液膜時,前述藥液噴嘴係從前述圓形基板之周緣部朝向前述圓形基板之中心部沿著前述圓形基板之半徑方向移動。 The coating method according to claim 1, wherein the chemical liquid nozzle is formed from a peripheral portion of the circular substrate toward a central portion of the circular substrate along the circular substrate when the spiral drug solution is formed Move in the radial direction. 如請求項1或2所記載之塗布方法,其中更具備以下步驟:使前述圓形基板以前述第一轉速旋轉,且在已停止前述藥液噴嘴之移動的狀態下從位於前述圓形基 板之周緣部之上方的前述藥液噴嘴將藥液吐出至前述圓形基板上,藉此沿著前述圓形基板之周緣部形成環狀之藥液膜。 The coating method according to claim 1 or 2, further comprising the step of rotating the circular substrate at the first rotational speed and from the circular base in a state where the movement of the chemical liquid nozzle has been stopped The chemical liquid nozzle above the peripheral portion of the plate discharges the chemical solution onto the circular substrate, thereby forming a ring-shaped chemical liquid film along the peripheral edge portion of the circular substrate. 如請求項1或2所記載之塗布方法,其中更具備執行預濕處理的步驟,該預濕處理係指在從前述藥液噴嘴吐出藥液之前,使前述圓形基板旋轉,且從溶劑噴嘴將溶劑吐出至前述圓形基板上,藉此在前述圓形基板上形成溶劑膜的處理。 The coating method according to claim 1 or 2, further comprising a step of performing a pre-wet treatment, wherein the pre-wetting treatment is performed by rotating the circular substrate before ejecting the chemical solution from the liquid chemical nozzle, and from the solvent nozzle The solvent is discharged onto the circular substrate, whereby a solvent film is formed on the circular substrate. 如請求項4所記載之塗布方法,其中前述預濕處理係成為溶劑已進入形成於前述圓形基板之凹部內的狀態。 The coating method according to claim 4, wherein the pre-wetting treatment is in a state in which the solvent has entered the concave portion formed in the circular substrate. 如請求項1或2所記載之塗布方法,其中前述螺旋狀之藥液膜中之各圈的藥液膜係在半徑方向未與鄰圈的前述藥液膜產生間隙。 The coating method according to claim 1 or 2, wherein the chemical liquid film of each of the spiral liquid chemical films does not have a gap with the chemical liquid film of the adjacent ring in the radial direction. 如請求項1或2所記載之塗布方法,其中在形成前述螺旋狀之藥液膜時,當前述藥液噴嘴位於比前述圓形基板之周緣部側之位置更靠近前述圓形基板之中心部側時,將前述藥液噴嘴之前端面與前述圓形基板之表面之間的餘隙形成為比前述周緣部側之位置中的前述餘隙更大。 The coating method according to claim 1 or 2, wherein, when the spiral liquid chemical film is formed, the chemical liquid nozzle is located closer to a central portion of the circular substrate than a peripheral portion of the circular substrate In the side, the clearance between the front end surface of the chemical liquid nozzle and the surface of the circular substrate is formed to be larger than the aforementioned clearance in the position on the peripheral edge side. 如請求項1或2所記載之塗布方法,其中在形成前述螺旋狀之藥液膜時,當前述藥液噴嘴位於比前述圓形基板之周緣部側之位置更靠近前述圓形基板之中心部 側時,將前述圓形基板之轉速形成為比位於前述周緣部側時的前述轉速更快。 The coating method according to claim 1 or 2, wherein, when the spiral liquid chemical film is formed, the chemical liquid nozzle is located closer to a central portion of the circular substrate than a peripheral portion of the circular substrate In the side, the rotation speed of the circular substrate is formed to be faster than the aforementioned rotation speed when the peripheral portion side is located.
TW106120181A 2016-07-05 2017-06-16 Coating method TWI652120B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016-133479 2016-07-05
JP2016133479A JP6764713B2 (en) 2016-07-05 2016-07-05 Application method

Publications (2)

Publication Number Publication Date
TW201803651A TW201803651A (en) 2018-02-01
TWI652120B true TWI652120B (en) 2019-03-01

Family

ID=60912679

Family Applications (1)

Application Number Title Priority Date Filing Date
TW106120181A TWI652120B (en) 2016-07-05 2017-06-16 Coating method

Country Status (5)

Country Link
JP (1) JP6764713B2 (en)
KR (1) KR102237668B1 (en)
CN (1) CN109414721B (en)
TW (1) TWI652120B (en)
WO (1) WO2018008325A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7092508B2 (en) * 2018-01-26 2022-06-28 株式会社Screenホールディングス Application method
JP7095394B2 (en) * 2018-05-15 2022-07-05 株式会社デンソー Resin application method
JP7149170B2 (en) * 2018-11-20 2022-10-06 ナガセケムテックス株式会社 Fluid material coating method, coating device, and nozzle head
CN111905989A (en) * 2020-08-14 2020-11-10 中国科学院微电子研究所 Gluing method of high-viscosity photoresist

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010114328A (en) 2008-11-07 2010-05-20 Mitsumi Electric Co Ltd Resist application method
JP5931230B1 (en) 2015-01-15 2016-06-08 東京エレクトロン株式会社 Liquid processing method, liquid processing apparatus, and recording medium.

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60217627A (en) 1984-04-13 1985-10-31 Hitachi Ltd Formation of thin film and forming device thereof
CN1365302A (en) * 1999-07-29 2002-08-21 中外炉工业株式会社 Circular or annular coating film forming method
KR100948220B1 (en) * 2002-03-19 2010-03-18 도쿄엘렉트론가부시키가이샤 Coating treatment method and coating equipment
JP3970695B2 (en) 2002-06-10 2007-09-05 株式会社Sokudo Resist application method
JP4084167B2 (en) * 2002-06-10 2008-04-30 株式会社Sokudo Treatment liquid application method
JP2004164802A (en) * 2002-11-15 2004-06-10 Tdk Corp Manufacturing method of optical recording disk
JP5109373B2 (en) * 2007-01-19 2012-12-26 富士通セミコンダクター株式会社 Coating liquid coating method and semiconductor device manufacturing method
JP2010042325A (en) * 2008-08-08 2010-02-25 Sharp Corp Coating method and coating apparatus
JP5507523B2 (en) * 2011-11-01 2014-05-28 東京エレクトロン株式会社 Coating processing apparatus, coating processing method, program, and computer storage medium
JP5790622B2 (en) * 2012-11-01 2015-10-07 東京エレクトロン株式会社 Coating film forming method, coating film forming apparatus, and storage medium
JP6438748B2 (en) * 2014-11-28 2018-12-19 株式会社Screenホールディングス Coating method and coating apparatus

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010114328A (en) 2008-11-07 2010-05-20 Mitsumi Electric Co Ltd Resist application method
JP5931230B1 (en) 2015-01-15 2016-06-08 東京エレクトロン株式会社 Liquid processing method, liquid processing apparatus, and recording medium.

Also Published As

Publication number Publication date
KR20190013951A (en) 2019-02-11
CN109414721B (en) 2021-10-22
JP2018001114A (en) 2018-01-11
KR102237668B1 (en) 2021-04-08
CN109414721A (en) 2019-03-01
WO2018008325A1 (en) 2018-01-11
TW201803651A (en) 2018-02-01
JP6764713B2 (en) 2020-10-07

Similar Documents

Publication Publication Date Title
TWI652120B (en) Coating method
TWI610724B (en) Coating method and coating device
JP7073658B2 (en) Board processing method, board processing device, and storage medium
CN108701605B (en) Substrate processing method and substrate processing apparatus
US11033929B2 (en) Application method
JP7212730B2 (en) Application method
US11862485B2 (en) Nozzle standby device, liquid processing apparatus and operation method of liquid processing apparatus
TWI634397B (en) Development method
JP6672091B2 (en) Substrate processing method and substrate processing apparatus
TW202106398A (en) Substrate treatment method and substrate treatment apparatus
TWI693109B (en) Coating method
TWI682452B (en) Substrate processing apparatus and substrate processing method
US11773492B2 (en) Substrate processing apparatus, substrate processing method, and storage medium
JP7202960B2 (en) Coating film forming method and coating film forming apparatus
JP7051334B2 (en) Board processing equipment and board processing method
KR20210038320A (en) Substrate processing apparatus and substrate processing method
JP7607230B2 (en) Coating device and coating method
JP2017195248A (en) Coating method
JPH11219880A (en) Discharge nozzle and coating liquid coating device