TWI650837B - Process equipment and assembly method thereof - Google Patents

Abstract

A process apparatus includes a vacuum process chamber, a remote plasma source, a block valve, and a seal ring. The shutoff valve is in fluid communication between the vacuum process chamber and the remote plasma source. The seal ring is disposed in the block valve and includes an annular body and an anti-corrosion layer. The corrosion resistant layer is coated on the outer surface of the annular body.

Description

Process equipment and assembly method thereof

The present disclosure relates to a process apparatus and an assembly method thereof.

Semiconductor devices are used in a variety of electronic applications, such as personal computers, mobile phones, digital cameras, and other electronic devices. The semiconductor device is generally fabricated by sequentially depositing an insulating or dielectric layer material, a conductive layer material, and a semiconductor layer material on a semiconductor substrate, and then patterning the various material layers formed using a lithography process to form circuit components and parts. Above the semiconductor substrate. Technological advances in the materials and design of integrated circuits have led to the development of integrated circuits for many generations. Each generation has smaller and more complex circuits than the previous generation. However, these developments have increased the complexity of processing and manufacturing integrated circuits. In order for these developments to be realized, similar developments in the manufacture and production of integrated circuits are also necessary.

In general, the biggest problem encountered in factory work is that the leak in the reaction chamber is not detected in time, resulting in a decrease in product yield and damage to the wafer. The leakage of air causes the wafer to be damaged along the direction of the seams. In particular, leakage in the reaction chamber is difficult to detect, and leakage can only be detected when it is periodically tested or the machine is off-line self-tested. occur. This is caused by the frequent damage to thousands of wafers and the quality of the products in the VLSI process. However, due to the large number of pipelines connected to the reaction chamber, it is possible for any of the components or pipelines to be damaged and become a leak source.

In accordance with various embodiments of the present disclosure, a process apparatus includes a vacuum process chamber, a remote plasma source, a block valve, and a seal ring. The shutoff valve is in fluid communication between the vacuum process chamber and the remote plasma source. The seal ring is disposed in the block valve and includes an annular body and an anti-corrosion layer. The corrosion resistant layer is coated on the outer surface of the annular body.

In accordance with various embodiments of the present disclosure, a process apparatus includes a vacuum process chamber, an ultraviolet emitter, a light transmissive member, and a seal ring. The vacuum process chamber has a window opening. The ultraviolet emitting device abuts the vacuum processing chamber and is configured to emit ultraviolet light toward the window opening. The light transmissive member covers the window and abuts between the vacuum processing chamber and the ultraviolet emitting device. The sealing ring is hermetically abutted between the vacuum processing chamber and the light transmissive member. The seal ring comprises an annular body and an ultraviolet resistant layer. The ultraviolet resistant layer is coated on the outer surface of the annular body.

According to various embodiments of the present disclosure, a process apparatus assembly method includes a fluid communication pipe body assembly between a vacuum process chamber and a remote plasma source and a gas-tightly abutting seal ring in a vacuum process chamber, remotely Between the slurry source and the two connected members of the tubular body assembly, wherein the sealing ring comprises an annular body and an anti-corrosion layer covering the outer surface of the annular body.

100‧‧‧Processing equipment

110‧‧‧Vacuum process chamber

120‧‧‧Remote plasma source

130‧‧‧Tube components

131a, 131c‧‧‧ pipe fittings

140‧‧‧Block valve

141‧‧‧ valve heart

142‧‧‧ valve body

150a1, 150a2, 150b1, 150b2, 150c‧‧‧ sealing ring

151‧‧‧ ring body

152‧‧‧Anti-corrosion layer

153‧‧‧Inner lining

200‧‧‧Processing equipment

210‧‧‧Vacuum process chamber

211‧‧‧ chamber body

211a‧‧‧first opening

212‧‧‧First cover

212a‧‧‧First window hole

212b‧‧‧ annular cavity

212c‧‧‧Air intake

213‧‧‧Second cover

213a‧‧‧Second window hole

220‧‧‧UV launcher

221‧‧‧Shell

221a‧‧‧ second opening

222‧‧‧UV light source

230‧‧‧First light transmission

240‧‧‧Second light transmission parts

241‧‧‧ holes

250a, 250b, 250c, 250d, 250e‧‧‧ seal rings

251‧‧‧ ring body

252‧‧‧Anti-UV layer

S101~S302‧‧‧Steps

1 is a partial cross-sectional view showing a process apparatus in accordance with some embodiments of the present disclosure.

Fig. 2 is a partially enlarged view showing the structure in Fig. 1.

3 is a cross-sectional view showing a seal ring in accordance with some embodiments of the present disclosure.

FIG. 4 is a flow chart showing a method of assembling a process device according to some embodiments of the present disclosure.

FIG. 5 is a flow chart showing a method of assembling a process device according to other embodiments of the present disclosure.

FIG. 6 is a partial cross-sectional view showing a process apparatus according to further embodiments of the present disclosure.

Figure 7 is a cross-sectional view showing a seal ring in accordance with further embodiments of the present disclosure.

FIG. 8 is a flow chart showing a method of assembling a process device according to other embodiments of the present disclosure.

The various embodiments of the present disclosure are disclosed in the drawings, and in the claims However, it should be understood that these practical details are not intended to limit the disclosure. That is, in the embodiments of the present disclosure, these practical details are not necessary. In addition, some of the conventional structures and elements are shown in the drawings in a simplified schematic manner in order to simplify the drawings.

Please refer to Figure 1 and Figure 2. 1 is a partial cross-sectional view of a process device 100 in accordance with some embodiments of the present disclosure. Figure 2 shows the first A partial enlarged view of the structure in the figure. As shown in FIGS. 1 and 2, a process apparatus 100 includes a vacuum process chamber 110, a remote plasma source (RPS) 120, a tube assembly 130, a block valve 140, and a plurality of seal rings 150a1. , 150a2, 150b1, 150b2, 150c. The tubular assembly 130 is in fluid communication with the distal plasma source 120 and the vacuum processing chamber 110 and includes a plurality of tubular members 131a, 131c. The shutoff valve 140 is connected in series and in fluid communication between the tubular members 131a, 131c.

In detail, as shown in FIG. 2, the tubes 131a, 131c and the block valve 140 are connected end to end and are in fluid communication between the vacuum process chamber 110 and the distal plasma source 120. In order to ensure that the vacuum processing chamber 110 sequentially blocks the airtightness of the valve 140 and the tube member 131c to the distal plasma source 120 via the tube member 131a of the tube assembly 130, the sealing ring 150a1 of the process device 100 is hermetically abutted. Between the vacuum processing chamber 110 and the connected tube member 131a, the sealing ring 150b1 is in airtight contact between the connected tube member 131a and the blocking valve 140, and the sealing ring 150b2 is airtightly abutted to the connected blocking valve 140 and Between the tubular members 131c, and the sealing ring 150a2 is hermetically abutted between the distal plasma source 120 and the connected tubular member 131c. The seal ring 150c is mounted within the block valve 140 and is used to block fluid communication between the process chamber 110 and the remote plasma source 120 when the block valve 140 is closed.

Specifically, the vacuum processing chamber 110, the tubular members 131a, 131c of the tubular assembly 130, the blocking valve 140, and the distal plasma source 120 are sequentially connected in series to form a fluid passage, and each of the foregoing sealing rings 150a1. 150a2, 150b1, 150b2 surround the outer edge of the fluid passage. Thereby, the seal rings 150a1, 150a2, 150b1, 150b2 can prevent the process gas from passing through the connection interface between the vacuum process chamber 110 and the connected pipe member 131a, the pipe member 131a and the partition. The connection interface between the shutoff valve 140, the connection interface between the block valve 140 and the pipe member 131c, and the connection interface between the remote plasma source 120 and the connected pipe member 131c leak, or prevent external air from entering the process device from the aforementioned connection interface The processing accuracy affecting the process within 100 or causing damage to the workpiece in the vacuum process chamber 110. The seal ring 150c in the block valve 140 can block the communication between the process chamber 110 and the remote plasma source 120 when the block valve is closed, to prevent the process gas from flowing back to the remote plasma source 120 when the remote plasma source 120 is turned off. Inside, causing pollution.

As shown in Fig. 2, the shutoff valve 140 is connected in series between the tubular members 131a, 131c of the tubular body assembly 130, and the seal ring 150c is disposed in the shutoff valve 140. The block valve 140 is configured to drive the seal ring 150c to selectively fluidly or non-fluidly circulate between the process chamber 110 and the distal plasma source 120. Specifically, a valve body 142 is formed inside the valve body 142 of the block valve 140, and a valve 142a is formed in the neck structure. The shutoff valve 140 has a valve core 141. The spool 141 is reciprocally movable relative to the valve 142a to selectively open or close the valve 142a. The seal ring 150c is disposed on the valve core 141 for abutting against the necking structure and sealing a surface of the valve 142a.

In some embodiments, the process apparatus 100 further includes a plasma gas supply unit (not shown). Distal plasma source 120 is configured to supply and control at least one plasma to enable processing applications to be performed within vacuum processing chamber 110. In some embodiments, the remote plasma source 120 includes a source of electrical power, a control module, and a plasma chamber (not shown). One or more conductive coil elements (not shown) are disposed adjacent to the plasma chamber, and the conductive coil elements are coupled to a source of radio frequency plasma power. The plasma source gas (unplasmformed) from the plasma gas supply unit is energized as a plasma when supplied to the remote plasma source 120. In some embodiments The reactive gas or uncharged particles (eg, free radicals) that are excited by the plasma are then transferred from the remote plasma source 120 to the vacuum processing chamber 110.

In some embodiments, the plasma gas supply unit includes a storage tank and a gas controller (not shown). The storage tank is configured to store a plasma source gas that is to be delivered to the remote plasma source 120. The plasma source gas may be selected from the group consisting of inert gases (argon, helium, etc.), oxygen, nitrogen trifluoride, ammonia, nitrogen, and hydrogen. The gas controller is configured to control the junction and transfer rate of the plasma source gas to the remote plasma source 120. The gas controller can include, for example, a valve, a flow meter, a detector, or other similar components. In some embodiments, the gas controller is controlled by the control module and receives instructions from the control module.

Please refer to FIG. 3, which is a cross-sectional view showing the seal ring 150a1 in accordance with some embodiments of the present disclosure. Each of the seal rings 150a1, 150a2, 150b1, 150b2, 150c includes an annular body 151 and a corrosion resistant layer 152. Although the third figure and the following description take the seal ring 150a1 as an embodiment, in some embodiments, the structure and function of the seal rings 150a2, 150b1, 150b2, 150c may be substantially the same as the seal ring 150a1 and will not be further described. The anti-corrosion layer 152 is coated on the outer surface of the annular body 151. The corrosion resistant layer 152 of the seal ring 150a1 is configured to resist erosion by corrosive gases.

In some embodiments, the material of the annular body 151 of the seal ring 150a1 comprises an elastomeric material. In some embodiments, the elastic material contained in the annular body 151 comprises Ethylene Propylene Rubber (EPDM), Fluorosilicone (FVMQ), Fluorocarbon elastomer (FKM), Nitrile (Nitrile). -Butadiene Rubber, NBR) or perfluorinated rubber (Perfluoroelastomer, FFKM), but the disclosure is not limited thereto. In practice, any material that provides elastic deformation of the seal ring 150a1 (for example, providing airtightness and mechanical reliability) can be used as the material of the annular body 151 in which the seal ring 150a1 is formed. Thereby, the annular body 151 of the seal ring 150a1 can provide characteristics such as sealing and mechanical reliability.

For example, the anti-corrosion layer 152 of the seal ring 150a1 is configured to resist the generation of fluorine radicals or oxygen radicals generated by the remote plasma source 120 and flowing through the tube assembly 130 to the vacuum process chamber 110. (oxygen radical). In order to resist corrosion of fluorine radicals or oxygen radicals generated by the remote plasma source 120, in some embodiments, the material of the corrosion resistant layer 152 of the seal ring 150a1 comprises nickel (Ni) and a fluoride. In some embodiments, the fluoride contained in the anti-corrosion layer 152 comprises polytetrafluoroethylene (PTFE), but the disclosure is not limited thereto. In some embodiments, the corrosion resistant layer 152 further comprises phosphorus (P). In some embodiments, the corrosion resistant layer 152 is a coating based on polytetrafluoroethylene and is embedded with nickel. Thereby, the corrosion-resistant layer 152 of the seal ring 150a1 can provide chemical resistance.

In other embodiments, the material of the corrosion resistant layer 152 of the seal ring 150a1 comprises an oxide ceramic. In some embodiments, the oxide contained in the anti-corrosion layer 152 includes aluminum oxide (Al ₂ O ₃ ) or Yttrium oxide (Y ₂ O ₃ ), but the disclosure is not limited thereto. In some embodiments, the material of the anti-corrosion layer 152 may also include other oxide or ceramic materials having chemical resistance. In some embodiments, when the corrosion resistant layer 152 comprises aluminum oxide or tantalum oxide, the corrosion resistant layer 152 can have a thickness of less than 1 or 0.5 microns. For example, the thickness of the anti-corrosion layer 152 may range from about 30 nanometers to about 40 nanometers, but the disclosure is not limited thereto.

In some embodiments, the anti-corrosion layer 152 can be formed on the annular body 151 by an Atomic Layer Deposition (ALD) process, but the disclosure is not limited thereto. In some embodiments, the seal ring 150a1 further includes an inner liner layer 153. The inner liner layer 153 is coupled between the annular body 151 and the corrosion resistant layer 152 and is configured to increase the adhesion between the annular body 151 and the corrosion resistant layer 152. In some embodiments, the material of the inner liner layer 153 comprises nickel. In some embodiments, the inner liner layer 153 can be formed on the annular body 151 by an electroplating process, but the disclosure is not limited thereto.

Please refer to FIG. 4 , which is a flow chart illustrating a method of assembling a process device according to some embodiments of the present disclosure. In addition to the above-described process device 100, another aspect of the present disclosure is to provide a process device assembly method. As shown in FIG. 4, the process device assembly method of FIG. 4 includes at least steps S101 to S102. It should be understood that the steps mentioned in some embodiments may be adjusted according to actual needs, and may be performed simultaneously or partially simultaneously, unless otherwise specified.

In step S101, the tubular body assembly 130 is in fluid communication between the vacuum processing chamber 110 and the distal plasma source 120.

In step S102, the seal rings 150a1, 150a2 are hermetically abutted between the vacuum process chamber 110, the distal plasma source 120 and the two of the tube assembly 130, wherein the seal rings 150a1, 150a2 comprise a ring. The body 151 and an anti-corrosion layer 152 coated on the outer surface of the annular body 151.

In some embodiments, the tubular assembly 130 includes a plurality of tubes Pieces 131a, 131c. The tubes 131a, 131c are in fluid communication between the vacuum processing chamber 110 and the distal plasma source 120, and step S102 includes step S102a (not shown).

In step S102a, the seal ring 150a1 is hermetically abutted between the vacuum process chamber 110 and the tube member 131a, and the seal ring 150a2 is hermetically abutted between the distal plasma source 120 and the tube member 131c.

In some embodiments, the process apparatus 100 further includes a shutoff valve 140. The tube members 131a, 131c and the blocking valve 140 are connected end to end and are in fluid communication between the vacuum processing chamber 110 and the distal plasma source 120, and the process equipment assembly method further comprises a step S103 (not shown).

In step S103, the seal ring 150b1 is hermetically abutted between the tube member 131a and the block valve 140, and the seal ring 150b2 is hermetically abutted between the tube member 131c and the block valve 140, wherein the seal rings 150b1, 150b2 An annular body 151 and an anti-corrosion layer 152 coated on the outer surface of the annular body 151 are included.

In some embodiments, the material of the corrosion resistant layer 152 comprises nickel and fluoride, or comprises a ceramic material.

Please refer to FIG. 5 , which is a flow chart showing a method for assembling a process device according to other embodiments of the present disclosure. As shown in FIG. 5, the method of assembling the process equipment of FIG. 5 includes at least steps S201 to S202. It should be understood that the steps mentioned in some embodiments may be adjusted according to actual needs, and may be performed simultaneously or partially simultaneously, unless otherwise specified.

In step S201, the shutoff valve 140 is in fluid communication between the vacuum processing chamber 110 and the distal plasma source 120.

In some embodiments, the shutoff valve 140 is disposed in the tubular body assembly Between the tubular members 131a, 131c of 130, fluid communication between the vacuum processing chamber 110 and the distal plasma source 120 is via the tubular assembly 130.

In step S202, the seal ring 150c is disposed in the block valve 140, wherein the seal ring 150c includes an annular body 151 and an anti-corrosion layer 152 covering the outer surface of the annular body 151. In some embodiments, the material of the corrosion resistant layer 152 comprises nickel and fluoride, or comprises a ceramic material.

Please refer to FIG. 6 , which is a partial cross-sectional view showing a process apparatus 200 according to other embodiments of the present disclosure. As shown in FIG. 6, a process apparatus 200 includes a vacuum process chamber 210, an ultraviolet light emitting device 220, a first light transmissive member 230, and a plurality of seal rings 250a, 250b, 250c, 250d, 250e. The vacuum processing chamber 210 has a first window 212a. The ultraviolet emitting device 220 abuts the vacuum processing chamber 210 and is configured to emit ultraviolet light toward the first window 212a. The first light transmissive member 230 covers the first window 212a and is in contact with the vacuum processing chamber 210 and the ultraviolet emitting device 220.

In detail, as shown in FIG. 6, the vacuum processing chamber 210 of the process apparatus 200 includes a chamber body 211 and a first cover 212. The chamber body 211 has a first opening 211a. The first cover 212 covers the first opening 211a of the chamber body 211 and is fixed to the first cover 212 to define an internal space of the vacuum processing chamber 210. The first window 212a of the vacuum processing chamber 210 is opened on the first cover 212. The ultraviolet emitting device 220 includes a housing 221 and an ultraviolet light source 222 disposed in the housing 221. The housing 221 of the ultraviolet emitting device 220 has a second opening 221a facing the first window 212a of the vacuum processing chamber 210, and the first transparent member 230 covers the second opening 221a. The vacuum processing chamber 210 is offset by the first cover 212 and the housing 221 of the ultraviolet emitting device 220. Pick up. The first light transmitting member 230 is abutted between the first cover 212 of the vacuum processing chamber 210 and the housing 221 of the ultraviolet emitting device 220, and the two sides of the first transparent member 230 respectively abut the first cover 212. The first window 212a is opposite to the second opening 221a of the housing 221. Thereby, the ultraviolet light emitting device 220 can use the ultraviolet light source 222 to emit ultraviolet light toward the first window 212a of the first cover 212 via the second opening 221a of the housing 221, and the ultraviolet light passes through the first light transmitting member 230. The interior of the chamber body 211 can be accessed for subsequent processing (eg, an ultraviolet curing process).

In some embodiments, in order to ensure airtightness between the vacuum processing chamber 210 and the first light transmissive member 230, one of the seal rings 250a of the process device 200 is airtightly abutted against the vacuum process chamber 210. A cover body 212 is disposed between the first light transmissive member 230. In some embodiments, in order to prevent the first light transmissive member 230 of the fragile material from being damaged when the seal ring 250a is clamped by the hard material casing 221, one of the seal rings 250b of the process device 200 is used as the ultraviolet light emitting device 220. The clamping between the housing 221 and the first light transmissive member 230 is buffered. In addition, in order to ensure airtightness between the chamber body 211 of the vacuum processing chamber 210 and the first cover 212, one of the seal rings 250c of the process device 200 is hermetically abutted against the cavity of the vacuum process chamber 210. The chamber body 211 is between the first cover 212 and the first cover 212.

Specifically, the connection interface of the first cover 212 of the vacuum processing chamber 210 for abutting the first transparent member 230 is located at an annular portion of the first cover 212 adjacent to the first window 212a, and the sealing ring 250a The annular portion of the first cover 212 is disposed between the annular portion and the first light transmissive member 230 and surrounds the outer edge of the first window 212a. The connecting interface of the housing 221 of the ultraviolet emitting device 220 for abutting the first transparent member 230 is located at an annular portion of the housing 221 adjacent to the second opening 221a, and the sealing ring 250b is disposed on the ring of the housing 221. Part and number A light transmissive member 230 is disposed around the outer edge of the second opening 221a. The connection interface of the chamber body 211 of the vacuum processing chamber 210 for abutting the first cover 212 is located at an annular portion of the chamber body 211 adjacent to the first opening 211a, and the sealing ring 250c is disposed at the chamber body 211. The other annular portion is between the first cover 212 and surrounds the outer edge of the first opening 211a.

Thereby, the sealing ring 250a can prevent external air from entering the interior of the processing apparatus 200 via the connection interface between the vacuum processing chamber 210 and the first light transmissive member 230, and the sealing ring 250c can prevent external air from passing through the vacuum processing chamber 210. The connection interface between the chamber body 211 and the first cover 212 enters the interior of the process equipment 200, thereby avoiding the processing accuracy affecting the process or causing damage to the workpiece in the vacuum process chamber 210.

In some embodiments, the material of the first light transmissive member 230 comprises quartz, for example, made of synthetic quartz, but the disclosure is not limited thereto. In practical applications, any material having high transparency and not reacting with ultraviolet light can be used as the material of the first light transmitting member 230.

Further, as shown in FIG. 6 , the process device 200 further includes a second light transmissive member 240 , and the vacuum process chamber 210 further includes a second cover 213 . The second light transmissive member 240 is disposed in the chamber body 211 of the vacuum processing chamber 210 and abuts the side of the first cover 212 away from the first light transmissive member 230 . Therefore, a space is formed between the first light transmissive member 230 and the second light transmissive member 240. The second cover 213 is disposed in the chamber body 211 of the vacuum processing chamber 210 and abuts the side of the first cover 212 away from the first transparent member 230. The second light transmitting member 240 is sandwiched between the first cover 212 and the second cover 213. The second cover 213 has a second window hole 213a. The second window hole 213a is aligned with the first window hole 212a of the first cover 212. Second light transmitting member The two sides of the second cover 212 are adjacent to the first window 212a of the first cover 212 and the second window 213a of the second cover 213, respectively. Therefore, the ultraviolet light source 222 emits ultraviolet light toward the first window 212a of the first cover 212 via the second opening 221a of the housing 221, and then sequentially passes through the first transparent member 230, the second transparent member 240, and the second The second window 213a of the second cover 213 enters the interior of the chamber body 211.

In some embodiments, the process equipment 200 also includes a gas cooling system (not shown). The gas cooling system provides an inert gas to the vacuum processing chamber 210. The cooling gas system maintains the temperature in the vacuum processing chamber 210 to a desired level, which in some embodiments may be less than 450 degrees Celsius. The cooling gas is also used as a cleaning gas to help remove various organic compounds or other substances discharged from the workpiece (such as a wafer) during the ultraviolet treatment. In some embodiments, nitrogen is used as a cooling gas. However, other suitable inert gases can also be used.

Cooling gas is introduced into the vacuum processing chamber 210 from a source of gas (not shown) through one or more inlet conduits (not shown). In some embodiments, the first cover 212 further has an annular cavity 212b and a plurality of air inlet holes 212c. The annular cavity 212b surrounds the outer edge of the first aperture 212a. Each of the air inlet holes 212c is fluidly connected between the annular cavity 212b and the first window hole 212a in a radial arrangement. The second light transmissive member 240 has a plurality of holes 241. After the cooling gas is introduced into the annular cavity 212b of the first cover 212 by the inlet conduit, it is then entered between the first transparent member 230 and the second transparent member 240 via the air inlet 212c of the first cover 212. Finally, the inside of the chamber body 211 is entered through the hole 241 of the second light transmitting member 240, thereby achieving the purpose of allowing the cooling gas to enter the inside of the chamber body 211. The number of holes 241 formed in the second light transmissive member 240 The size, size, shape and pattern can vary. In some embodiments, the holes 241 in the second light transmissive member 240 have a diameter of 2 millimeters (mm), and the holes 241 are spaced apart from each other by a distance of 15 mm, but the disclosure is not limited thereto.

In some embodiments, the material of the second light transmissive member 240 comprises quartz, for example, made of synthetic quartz, but the disclosure is not limited thereto. In practical applications, any material having high transparency and not reacting with ultraviolet light can be used as the material of the second light transmissive member 240.

In some embodiments, in order to increase the airtightness between the first cover 212 and the second transparent member 240 of the vacuum processing chamber 210, one of the sealing rings 250d of the process device 200 is pressed against the first cover. The body 212 is between the second light transmissive member 240. In some embodiments, in order to prevent the second light transmissive member 240 of the fragile material from being damaged when the seal ring 250d is clamped by the second cover 213 of the hard material, one of the seal rings 250e of the process device 200 is pressed against The second cover 213 and the second transparent member 240 are used as a clamping buffer.

Please refer to FIG. 7 , which is a cross-sectional view showing a seal ring 250 a according to other embodiments of the present disclosure. Each of the seal rings 250a, 250b, 250c, 250d, 250e includes an annular body 251 and an ultraviolet resistant layer 252. Although FIG. 7 and the following description are based on the seal ring 250a as an embodiment, in some embodiments, the structure and function of the seal ring 250b, 250c, 250d, 250e may be substantially the same as the seal ring 250a without further recitation. The ultraviolet resistant layer 252 is coated on the outer surface of the annular body 251. The UV resistant layer 252 of the seal ring 250a is configured to resist UV attack.

In some embodiments, the material of the annular body 251 of the seal ring 250a comprises an elastomeric material. In some embodiments, the annular body 251 is included The elastic material contained includes ethylene propylene rubber (EPDM), fluorocarbon rubber (FVMQ), fluorinated rubber (FKM), nitrile rubber (NBR) or perfluorinated rubber (FFKM), but the disclosure is not limited thereto. . In practice, as long as it is a material that provides elastic deformation of the seal ring 250a (for example, providing airtightness and mechanical reliability), it can be used as the material of the annular body 251 in which the seal ring 250a is formed.

For example, the anti-ultraviolet layer 252 of the sealing ring 250a is configured to resist the ultraviolet light source 222 of the ultraviolet emitting device 220, and sequentially passes through the second opening 221a of the housing 221, the first transparent member 230, and the first cover. The first window 212a of the body 212, the second light transmitting member 240, and the second window 213a of the second cover 213 enter the ultraviolet rays inside the chamber body 211. In order to resist the erosion of ultraviolet light generated by the ultraviolet emitting device 220, in some embodiments, the material of the ultraviolet resistant layer 252 of the seal ring 250a comprises a ceramic material. In some embodiments, the ceramic material contained in the ultraviolet resistant layer 252 comprises aluminum oxide (Al ₂ O ₃ ) or yttrium oxide (Y ₂ O ₃ ), but the disclosure is not limited thereto. In some embodiments, the material of the ultraviolet resistant layer 252 may also include other ceramic materials or oxides having ultraviolet light blocking properties, high ultraviolet light reflecting properties, or anti-electromagnetic radiation functions.

In some embodiments, the UV resistant layer 252 can be formed on the annular body 251 by an atomic layer deposition (ALD) process, but the disclosure is not limited thereto.

Please refer to FIG. 8 , which is a flow chart showing a method for assembling a process device according to other embodiments of the present disclosure. In addition to the above-described process device 200, another aspect of the present disclosure is to provide a process device assembly method. As shown in FIG. 8, the process device assembly method of FIG. 8 includes at least steps S301 to S302. It should be understood that the steps mentioned in some embodiments, except for special In addition to the order, they can be adjusted according to actual needs, and can even be executed simultaneously or partially.

In step S301, the light transmissive member abuts between the vacuum processing chamber 210 and the ultraviolet emitting device 220.

In step S302, the sealing ring 250a is hermetically abutted between the vacuum processing chamber 210 and the light transmissive member, and the other sealing ring 250b serves as a clamping buffer between the ultraviolet emitting device 220 and the light transmitting member. The seal rings 250a, 250b include an annular body 251 and an ultraviolet resistant layer 252 that is coated on the outer surface of the annular body 251. In some embodiments, the material of the UV resistant layer 252 comprises a ceramic material.

In some embodiments, the process device 200 includes a first light transmissive member 230. The vacuum processing chamber 210 of the process apparatus 200 includes a chamber body 211 and a first cover 212. The first window 212a is opened on the first cover 212. The ultraviolet emitting device 220 includes a housing 221. The housing 221 of the ultraviolet emitting device 220 has a second opening 221a. In some embodiments, step S301 includes step S301a (not shown).

In the step S301, the first light transmissive member 230 is abutted between the first cover 212 of the vacuum processing chamber 210 and the housing 221 of the ultraviolet emitting device 220, wherein the two sides of the first transparent member 230 are respectively adjacent to each other. The first window 212a on the first cover 212 and the second opening 221a on the housing 221.

In some embodiments, step S302 includes step S302a and step S302b (not shown).

In step S302a, the seal ring 250a is hermetically abutted between the first cover 212 of the vacuum process chamber 210 and the light transmissive member.

In step S302b, the seal ring 250b serves as a nip buffer between the housing 221 of the ultraviolet ray emitting device 220 and the light transmissive member.

In some embodiments, the process device 200 further includes a second light transmissive member 240. The vacuum process chamber 210 also includes a second cover 213. The second cover 213 has a second window hole 213a. In some embodiments, the process device assembly method may further include steps S303 to S307 (not shown).

In step S303 , the second light transmissive member 240 is in the chamber body 211 of the vacuum processing chamber 210 and abuts the side of the first cover 212 away from the first light transmissive member 230 .

In the step S304 , the second cover 213 is in the cavity body 211 of the vacuum processing chamber 210 and abuts the side of the first cover 212 away from the first transparent member 230 .

In the step S305, the second light transmissive member 240 is sandwiched between the first cover body 212 and the second cover body 213, wherein the two sides of the second light transmissive member 240 respectively abut the first on the first cover body 212. The window hole 212a and the second window hole 213a on the second cover body 213.

In step S306, the seal ring 250d is pressed between the first cover 212 and the second light transmissive member 240.

In step S307, the seal ring 250e serves as a nip buffer between the second cover 213 and the second light transmissive member 240.

In some embodiments, the chamber body 211 has a first opening 211a, and the process device assembly method may further include steps S308-S309 (not shown).

In step S308, the first cover 212 abuts the chamber body. 211 and covers the first opening 211a.

In step S308, the seal ring 250c is in airtight contact between the first cover 212 and the chamber body 211.

Although the present disclosure has been disclosed in the above embodiments, it is not intended to limit the disclosure, and it is to be understood that those skilled in the art can make various modifications and retouchings without departing from the spirit and scope of the present disclosure. The scope is subject to the definition of the scope of the patent application attached.

Claims (10)

A process equipment comprising: a vacuum process chamber; a remote plasma source; a shutoff valve fluidly connected between the vacuum process chamber and the remote plasma source; and a seal ring disposed at the partition Inside the valve, and comprising: an annular body; and an anti-corrosion layer completely covering the outer surface of the annular body. The process apparatus of claim 1, wherein the material of the corrosion resistant layer comprises nickel and a fluoride. The process apparatus of claim 2, wherein the fluoride comprises polytetrafluoroethylene. The process apparatus of claim 1, wherein the material of the corrosion resistant layer comprises an oxide ceramic. The process apparatus of claim 1, wherein the seal ring further comprises an inner liner layer coupled between the annular body and the corrosion resistant layer. The process apparatus of claim 5, wherein the inner liner is a material comprising a plating layer of nickel. A process equipment comprising: a vacuum processing chamber having a window hole; an ultraviolet emitting device abutting the vacuum processing chamber and configured to emit ultraviolet light toward the window hole; a light transmissive member covering the window hole and reaching Connected between the vacuum processing chamber and the ultraviolet emitting device; and a sealing ring that is airtightly abutted and clamped between the vacuum processing chamber and the light transmissive member, wherein the sealing ring comprises: a ring a body; and an ultraviolet resistant layer covering the outer surface of the annular body. The process apparatus of claim 7, wherein the material of the ultraviolet resistant layer comprises aluminum oxide or cerium oxide. A method of assembling a process device, comprising: fluidly connecting a tube assembly between a vacuum processing chamber and a distal plasma source; and sealingly abutting a first sealing ring in the vacuum processing chamber, the far An end plasma source is coupled between the two of the tube assemblies, wherein the first seal ring includes an annular body and an anti-corrosion layer covering an outer surface of the annular body. The method of assembling a process device according to claim 9, wherein the pipe body assembly comprises a plurality of pipe fittings, and the process equipment assembling method further comprises: Fluidly connecting a shutoff valve between two adjacent ones of the tubular members; and hermetically abutting a second seal ring between the tubular members and two of the shutoff valves, wherein the second seal The ring includes an annular body and an anti-corrosion layer coated on an outer surface of the annular body.