TWI648863B - Solar cell and a manufacturing method thereof - Google Patents
Solar cell and a manufacturing method thereof Download PDFInfo
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- TWI648863B TWI648863B TW106115032A TW106115032A TWI648863B TW I648863 B TWI648863 B TW I648863B TW 106115032 A TW106115032 A TW 106115032A TW 106115032 A TW106115032 A TW 106115032A TW I648863 B TWI648863 B TW I648863B
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- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 229910052751 metal Inorganic materials 0.000 claims abstract description 115
- 239000002184 metal Substances 0.000 claims abstract description 115
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 238000009792 diffusion process Methods 0.000 claims abstract description 37
- 238000002161 passivation Methods 0.000 claims abstract description 28
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 23
- 239000001301 oxygen Substances 0.000 claims abstract description 23
- 239000013078 crystal Substances 0.000 claims abstract description 22
- 230000003667 anti-reflective effect Effects 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims description 23
- 229910052796 boron Inorganic materials 0.000 claims description 15
- 238000000151 deposition Methods 0.000 claims description 13
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 12
- 229910052709 silver Inorganic materials 0.000 claims description 12
- 239000004332 silver Substances 0.000 claims description 12
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 11
- 238000007639 printing Methods 0.000 claims description 8
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical group [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 5
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 claims description 5
- 239000004327 boric acid Substances 0.000 claims description 5
- 229910052698 phosphorus Inorganic materials 0.000 claims description 5
- 239000011574 phosphorus Substances 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910000449 hafnium oxide Inorganic materials 0.000 claims 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical group O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 210000004027 cell Anatomy 0.000 description 40
- -1 silver aluminum Chemical compound 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 230000035484 reaction time Effects 0.000 description 2
- 238000007788 roughening Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- BCZWPKDRLPGFFZ-UHFFFAOYSA-N azanylidynecerium Chemical compound [Ce]#N BCZWPKDRLPGFFZ-UHFFFAOYSA-N 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 210000002858 crystal cell Anatomy 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- BIXHRBFZLLFBFL-UHFFFAOYSA-N germanium nitride Chemical compound N#[Ge]N([Ge]#N)[Ge]#N BIXHRBFZLLFBFL-UHFFFAOYSA-N 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Photovoltaic Devices (AREA)
Abstract
一種太陽能電池,包含第一導電型半導體基板、射極擴散層、鈍化層、抗反射層、第二金屬電極、薄氧層、結晶層、絕緣層、金屬層及圖案化金屬。射極擴散層設置緊鄰基板的正面。鈍化層設置緊鄰射極擴散層。抗反射層設置緊鄰鈍化層。第二金屬電極設置緊鄰抗反射層,薄氧層設置緊鄰基板的下表面。結晶層設置緊鄰薄氧層,絕緣層設置緊鄰結晶層。金屬層設置緊鄰絕緣層。位於絕緣層上的圖案化金屬接觸到結晶層且穿透金屬層。 A solar cell comprising a first conductive semiconductor substrate, an emitter diffusion layer, a passivation layer, an antireflection layer, a second metal electrode, a thin oxygen layer, a crystalline layer, an insulating layer, a metal layer, and a patterned metal. The emitter diffusion layer is disposed adjacent to the front side of the substrate. The passivation layer is disposed adjacent to the emitter diffusion layer. The anti-reflective layer is disposed adjacent to the passivation layer. The second metal electrode is disposed adjacent to the anti-reflective layer, and the thin oxygen layer is disposed adjacent to the lower surface of the substrate. The crystal layer is disposed adjacent to the thin oxygen layer, and the insulating layer is disposed adjacent to the crystal layer. The metal layer is placed next to the insulating layer. The patterned metal on the insulating layer contacts the crystalline layer and penetrates the metal layer.
Description
本揭示文件內容是有關於一種太陽能電池,特別是有關於一種太陽能電池的製造。 The disclosure is directed to a solar cell, and more particularly to the manufacture of a solar cell.
現今社會環保意識抬頭且石油能源大幅下降,各國爭相發掘新的能源以解決環境污染和能源危機。其中太陽能電池所需之能源最易取得,致使各國研究員致力於研究如何能有效利用太陽能發電以解決能源危機。 Nowadays, environmental awareness in society has risen and oil energy has fallen sharply. Countries are scrambling to discover new energy sources to solve environmental pollution and energy crisis. Among them, the energy required for solar cells is the easiest to obtain, which has led researchers in various countries to study how to effectively use solar power to solve the energy crisis.
太陽能電池的主要議題在如何吸收更多的光線。而傳統上的太陽能電池架構是在電池的背面使用整面銀膠,這種做法可以降低串聯電阻且增加長波段光線於電池背面的反射量,但其缺點在於整面的銀膠造成成本太高且製造設備及技術不夠成熟。 The main issue of solar cells is how to absorb more light. The traditional solar cell architecture uses a full-face silver paste on the back side of the battery. This can reduce the series resistance and increase the amount of reflection of long-wave light on the back of the battery, but the disadvantage is that the silver paste on the entire surface is too expensive. And the manufacturing equipment and technology are not mature enough.
因此,如何降低太陽能電池的成本且不減少其將光能轉換電能的效率為本案所欲解決之問題。 Therefore, how to reduce the cost of the solar cell without reducing the efficiency of converting the light energy into electrical energy is the problem to be solved by the present invention.
為了解決上述問題,本案的一態樣係於提供一種 太陽能電池。上述太陽能電池包含基板、設置緊鄰基板的上表面的射極擴散層、設置緊鄰射極擴散層的鈍化層、設置緊鄰鈍化層的抗反射層、設置緊鄰抗反射層的第二金屬電極、設置緊鄰基板的下表面的薄氧層、設置緊鄰薄氧層的結晶層、設置緊鄰結晶層的絕緣層、設置緊鄰絕緣層的金屬層和圖案化金屬。 In order to solve the above problems, one aspect of the case is to provide a Solar battery. The solar cell comprises a substrate, an emitter diffusion layer disposed adjacent to an upper surface of the substrate, a passivation layer disposed adjacent to the emitter diffusion layer, an anti-reflection layer disposed adjacent to the passivation layer, a second metal electrode disposed adjacent to the anti-reflection layer, and disposed adjacent to each other A thin oxygen layer on the lower surface of the substrate, a crystal layer disposed adjacent to the thin oxygen layer, an insulating layer disposed adjacent to the crystal layer, a metal layer disposed adjacent to the insulating layer, and a patterned metal.
本案的又一態樣係於提供一種太陽能電池的製造方法,基本上由以下步驟所組成:(a)提供基板;(b)將基板表面刻成金字塔狀;(c)進行上表面硼擴散形成射極擴散層;(d)進行硼酸玻璃去除;(e)於基板的一下表面形成薄氧層;(f)在射極擴散層上沉積形成鈍化層;(g)在鈍化層上沉積形成抗反射層;(h)在薄氧層進行微晶磷擴散沉積形成結晶層;(i)在該結晶層沉積形成絕緣層;(j)在抗反射層上印刷多個第二金屬電極;(k)在該絕緣層中開設多個通孔且這些通孔彼此間隔並暴露該結晶層之一部分;(l)印刷一圖案化金屬且圖案化金屬包含多個第一金屬電極分別位於上述那些通孔中;以及(m)在絕緣層以及圖案化金屬上印刷金屬層,而這些第一金屬電極的兩端分別電性連接結晶層以及金屬層。 Another aspect of the present invention is to provide a method for fabricating a solar cell, which basically consists of: (a) providing a substrate; (b) engraving the surface of the substrate into a pyramid; (c) performing boron diffusion on the upper surface An emitter diffusion layer; (d) performing boric acid glass removal; (e) forming a thin oxygen layer on the lower surface of the substrate; (f) depositing a passivation layer on the emitter diffusion layer; (g) depositing an anti-deposition on the passivation layer a reflective layer; (h) performing microcrystalline phosphorus diffusion deposition on the thin oxygen layer to form a crystalline layer; (i) depositing an insulating layer on the crystalline layer; (j) printing a plurality of second metal electrodes on the anti-reflective layer; Opening a plurality of via holes in the insulating layer and spacing the via holes from each other and exposing a portion of the crystal layer; (1) printing a patterned metal and the patterned metal comprising a plurality of first metal electrodes respectively located in the through holes And (m) printing a metal layer on the insulating layer and the patterned metal, and the two ends of the first metal electrodes are electrically connected to the crystal layer and the metal layer, respectively.
100‧‧‧太陽能電池 100‧‧‧ solar cells
110‧‧‧基板 110‧‧‧Substrate
120‧‧‧上表面 120‧‧‧ upper surface
121‧‧‧射極擴散層 121‧‧ ‧ emitter diffusion layer
122‧‧‧鈍化層 122‧‧‧ Passivation layer
123‧‧‧抗反射層 123‧‧‧Anti-reflective layer
124‧‧‧第二金屬電極 124‧‧‧Second metal electrode
125‧‧‧硼酸玻璃 125‧‧‧Boric acid glass
130‧‧‧下表面 130‧‧‧lower surface
131‧‧‧薄氧層 131‧‧‧Oxygen layer
132‧‧‧結晶層 132‧‧‧ Crystallization layer
133‧‧‧絕緣層 133‧‧‧Insulation
134‧‧‧金屬層 134‧‧‧metal layer
135‧‧‧圖案化金屬 135‧‧‧ patterned metal
136‧‧‧第一金屬電極 136‧‧‧First metal electrode
300‧‧‧太陽能電池的製造方法 300‧‧‧Methods for manufacturing solar cells
S301、S302、S303、S304、S305、S306、S307、S308、S309、S310、S311、S312、S313‧‧‧步驟 Steps S301, S302, S303, S304, S305, S306, S307, S308, S309, S310, S311, S312, S313‧‧
當結合隨附圖式閱讀時,自以下詳細描述將很好地理解本揭示文件之態樣。應注意,根據工業中的標準實務,各特徵並非按比例繪製。事實上,出於論述清晰之目的, 可任意增加或減小各特徵之尺寸。 The aspects of the present disclosure will be better understood from the following detailed description. It should be noted that the various features are not drawn to scale in accordance with standard practice in the industry. In fact, for the sake of clarity, The size of each feature can be arbitrarily increased or decreased.
第1圖為根據本案一些實施例所繪示之一種太陽能電池的結構示意圖;第2A圖為根據本案一些實施例所繪示之一種太陽能電池的圖案化金屬的上視圖;第2B圖為根據本案一些實施例所繪示之另一種太陽能電池的圖案化金屬的上視圖;第3圖為根據本案一些實施例所繪示之一種太陽能製造方法流程圖;以及第4A~4M圖為根據本案一些實施例所繪示之一種太陽能電池的剖面示意圖。 1 is a schematic structural view of a solar cell according to some embodiments of the present invention; FIG. 2A is a top view of a patterned metal of a solar cell according to some embodiments of the present invention; FIG. 2B is a view according to the present invention A top view of a patterned metal of another solar cell illustrated in some embodiments; FIG. 3 is a flow chart of a solar manufacturing method according to some embodiments of the present invention; and FIGS. 4A-4M are some implementations according to the present invention A schematic cross-sectional view of a solar cell is illustrated.
本文當中所用之相對詞彙,如『下』或『底部』與『上』或『頂部』,用來描述文中在附圖中所示的一元件與另一元件之關係。相對詞彙是用來描述裝置在附圖中所描述之外的不同方位是可以被理解的。例如,如果一附圖中的裝置被翻轉,元件將會被描述原為位於其它元件之『下』側將被定向為位於其他元件之『上』側。例示性的詞彙『下』,根據附圖的特定方位可以包含『下』和『上』兩種方位。同樣地,如果一附圖中的裝置被翻轉,元件將會被描述原為位於其它元件之『下方』或『之下』將被定向為位於其他元件上之『上方』。例示性的詞彙『下方』或『之下』,可以包含『上方』和『上方』兩種方位。 The relative terms used in the text, such as "bottom" or "bottom" and "upper" or "top", are used to describe the relationship of one element to another in the figures. Relative vocabulary is used to describe different orientations of the device other than those described in the drawings. For example, if the device in one of the figures is turned over, the elements will be described as being located on the "lower" side of the other elements. The exemplary vocabulary "below" may include both "lower" and "upper" orientations depending on the particular orientation of the drawings. Similarly, if the device in one of the figures is turned over, the element will be described as being "below" or "below" the other elements. The exemplary vocabulary "below" or "below" can include both "upper" and "upper" orientations.
當一個元件被稱為『在…上』時,它可泛指該元件直接在其他元件上,也可以是有其他元件存在於兩者之中。相反地,當一個元件被稱為『直接在』另一元件,它是不能有其他元件存在於兩者之中間。如本文所用,詞彙『與/或』包含了列出的關聯項目中的一個或多個的任何組合。 When an element is referred to as "on", it can generally mean that the element is directly on the other element, or that other element is present in the two. Conversely, when an element is referred to as being "directly on" another element, it cannot be. As used herein, the term "and/or" encompasses any combination of one or more of the listed associated items.
參照第1圖,第1圖為根據本案一些實施例所繪示之一種太陽能電池100的結構示意圖。太陽能電池100包含基板110、射極擴散層121、鈍化層122、抗反射層123、第二金屬電極124、薄氧層131、結晶層132、絕緣層133、金屬層134及圖案化金屬135。 Referring to FIG. 1 , FIG. 1 is a schematic structural view of a solar cell 100 according to some embodiments of the present disclosure. The solar cell 100 includes a substrate 110, an emitter diffusion layer 121, a passivation layer 122, an anti-reflection layer 123, a second metal electrode 124, a thin oxygen layer 131, a crystal layer 132, an insulating layer 133, a metal layer 134, and a patterned metal 135.
於本實施例中,基板110是一N型矽基板,但其他型態的半導體基板亦在本揭示文件所保護的範圍之中。上表面120是基板110的正面。上表面120上有射極擴散層121、鈍化層122、抗反射層123和第二金屬電極124。 In the present embodiment, the substrate 110 is an N-type germanium substrate, but other types of semiconductor substrates are also within the scope of the present disclosure. The upper surface 120 is the front side of the substrate 110. The upper surface 120 has an emitter diffusion layer 121, a passivation layer 122, an anti-reflection layer 123, and a second metal electrode 124.
射極擴散層121設置緊鄰基板110的上表面。在本實施例中,射極擴散層121為硼摻雜,但是其他三價的金屬摻雜亦在本揭示文件所保護的範圍之中。 The emitter diffusion layer 121 is disposed in close proximity to the upper surface of the substrate 110. In the present embodiment, the emitter diffusion layer 121 is doped with boron, but other trivalent metal dopants are also within the scope of the present disclosure.
鈍化層122設置緊鄰射極擴散層121。在本實施例中,鈍化層122之材質為氧化鋁,但是其他材質亦在本揭示文件所保護的範圍之中。 The passivation layer 122 is disposed in close proximity to the emitter diffusion layer 121. In the present embodiment, the material of the passivation layer 122 is alumina, but other materials are also within the scope of the present disclosure.
抗反射層123設置緊鄰鈍化層122。在本實施例中,抗反射層123之材質為氮化矽,但是其他材質亦在本揭示文件所保護的範圍之中。 The anti-reflection layer 123 is disposed in close proximity to the passivation layer 122. In the present embodiment, the material of the anti-reflection layer 123 is tantalum nitride, but other materials are also within the scope of the present disclosure.
在本實施例中,射極擴散層121、鈍化層122 和抗反射層123成金字塔的形狀使得光線不易反射出去,以利光線的吸收。其他利於吸收光線之不平滑的形狀的設置亦在本揭示文件所保護的範圍之中。 In this embodiment, the emitter diffusion layer 121 and the passivation layer 122 The shape of the pyramid and the anti-reflection layer 123 is such that the light is not easily reflected out to facilitate the absorption of light. Other arrangements that facilitate the absorption of unsmooth shapes of light are also within the scope of the present disclosure.
第二金屬電極124設置緊鄰射極擴散層121且穿透鈍化層122和抗反射層123。在本實施例中,第二金屬電極124之材質為銀鋁,但是其他材質亦在本揭示文件所保護的範圍之中。 The second metal electrode 124 is disposed adjacent to the emitter diffusion layer 121 and penetrates the passivation layer 122 and the anti-reflection layer 123. In the present embodiment, the material of the second metal electrode 124 is silver aluminum, but other materials are also within the scope protected by the present disclosure.
下表面130是基板110的背面。下表面130上有薄氧層131、結晶層132、絕緣層133、金屬層134及圖案化金屬135。 The lower surface 130 is the back surface of the substrate 110. The lower surface 130 has a thin oxygen layer 131, a crystal layer 132, an insulating layer 133, a metal layer 134, and a patterned metal 135.
薄氧層131設置緊鄰基板110的下表面130。 The thin oxygen layer 131 is disposed adjacent to the lower surface 130 of the substrate 110.
結晶層132設置緊鄰薄氧層131。在本實施例中,結晶層132是由磷擴散的為結晶層,但是其他材質亦在本揭示文件所保護的範圍之中。 The crystal layer 132 is disposed in close proximity to the thin oxygen layer 131. In the present embodiment, the crystal layer 132 is a crystalline layer diffused by phosphorus, but other materials are also within the scope of the present disclosure.
絕緣層133設置緊鄰結晶層132。在本實施例中,絕緣層133可以是二氧化矽(SiO2)或氮化矽(Si3N4),但是其他可以用來鈍化表面的材質亦在本揭示文件所保護的範圍之中。絕緣層133是用來避免P+型和N型的接觸。 The insulating layer 133 is disposed in close proximity to the crystalline layer 132. In the present embodiment, the insulating layer 133 may be cerium oxide (SiO 2 ) or cerium nitride (Si 3 N 4 ), but other materials that can be used to passivate the surface are also within the scope of the present disclosure. The insulating layer 133 is used to avoid contact between the P+ type and the N type.
金屬層134設置緊鄰絕緣層133。在本實施例中,金屬層134是由鋁製成,但是其他可以用來反光和導電的金屬亦在本揭示文件所保護的範圍之中。 The metal layer 134 is disposed in close proximity to the insulating layer 133. In the present embodiment, the metal layer 134 is made of aluminum, but other metals that can be used for reflection and conduction are also within the scope of the present disclosure.
圖案化金屬135位於絕緣層133、接觸到結晶層132且穿透金屬層134。若圖案化金屬135沒有穿透金屬層134,則電阻值會太高,造成導電性不佳。在本實施例中, 圖案化金屬135是含鉛的銀,但是其他材質亦在本揭示文件所保護的範圍之中。實際應用中,圖案化金屬135可以是銀膠,一般來說,在製程中使用銀膠成本相對較高。傳統上若在基板110的下表面130整體完整塗佈銀膠可以達到導電與反射光線的效果,但也同時將提高太陽能電池的製造成本。 The patterned metal 135 is located on the insulating layer 133, contacts the crystalline layer 132, and penetrates the metal layer 134. If the patterned metal 135 does not penetrate the metal layer 134, the resistance value will be too high, resulting in poor conductivity. In this embodiment, The patterned metal 135 is lead-containing silver, but other materials are also within the scope of this disclosure. In practical applications, the patterned metal 135 may be a silver paste. Generally, the use of silver glue in the process is relatively expensive. Traditionally, if the silver paste is completely coated on the lower surface 130 of the substrate 110, the effect of conducting and reflecting light can be achieved, but at the same time, the manufacturing cost of the solar cell will be improved.
圖案化金屬135中有多個第一金屬電極136,他們可以是點狀的排列(如第2A圖)、條狀的排列(如第2B圖)或是任意的圖型排列皆在本揭示文件所保護的範圍之中。上述多個第一金屬電極136可能連接到匯流電極但不互相連接,亦可能不連接到匯流電極。上述不連接到匯流電極尚可導通之原因為圖案化金屬135穿透金屬層134,而金屬層134可以導通。 The patterned metal 135 has a plurality of first metal electrodes 136, which may be in a dot arrangement (such as FIG. 2A), a strip arrangement (such as FIG. 2B), or any pattern arrangement in the present disclosure. Among the protected areas. The plurality of first metal electrodes 136 may be connected to the bus electrodes but may not be connected to each other or may be connected to the bus electrodes. The reason why the above connection to the bus electrode is still conductive is that the patterned metal 135 penetrates the metal layer 134, and the metal layer 134 can be turned on.
第2A圖及第2B圖為圖案化金屬135的示意圖。影響圖案化金屬135中的多個第一金屬電極136排列設計的重要參數是圖案化金屬相對金屬層之面積比,面積比太大會增加下表面的負荷而造成太陽能電池的壽命減少,面積比太小會使電阻上升而降低太陽能電池的效率。因此,在一些實施例中,圖案化金屬135相對於金屬層134總面積的面積比設為大約0.2%至大約1%。由於面積比為大約0.2%至大約1%,若使用銀膠來製造圖案化金屬135,相較於傳統完整塗佈銀膠的製造方式,本案所形成的圖案化金屬135其銀膠用量節省了85.7%至95.6%。 2A and 2B are schematic views of the patterned metal 135. An important parameter affecting the arrangement design of the plurality of first metal electrodes 136 in the patterned metal 135 is the area ratio of the patterned metal to the metal layer. If the area ratio is too large, the load on the lower surface is increased, and the life of the solar cell is reduced, and the area ratio is too large. A small increase in resistance reduces the efficiency of the solar cell. Thus, in some embodiments, the area ratio of patterned metal 135 relative to the total area of metal layer 134 is set to be from about 0.2% to about 1%. Since the area ratio is about 0.2% to about 1%, if silver paste is used to manufacture the patterned metal 135, the patterned metal 135 formed in the present invention has a silver paste amount saved compared to the conventional method of manufacturing the completely coated silver paste. 85.7% to 95.6%.
參考第2A圖,第2A圖為根據本案一些實施例所繪示之一種太陽能電池的圖案化金屬135的布置的上視圖。 Referring to FIG. 2A, FIG. 2A is a top view of the arrangement of the patterned metal 135 of a solar cell according to some embodiments of the present disclosure.
在本揭示文件的一實施例中,第2A圖是點狀排列而成的圖案化金屬135,其包括多個點狀第一金屬電極136。而所有第一金屬電極136的面積總和相對於金屬層134的面積比為大約0.2%至大約1%。 In an embodiment of the present disclosure, FIG. 2A is a patterned metal 135 arranged in a dot shape including a plurality of dot-shaped first metal electrodes 136. The area ratio of all the first metal electrodes 136 to the metal layer 134 is about 0.2% to about 1%.
參考第2B圖,第2B圖為根據本案一些實施例所繪示之另一種太陽能電池的圖案化金屬135的布置的上視圖。 Referring to FIG. 2B, FIG. 2B is a top view of the arrangement of patterned metal 135 of another solar cell, according to some embodiments of the present disclosure.
在本揭示文件的一實施例中,第2B圖是線狀排列而成的圖案化金屬135,其包括多條線狀第一金屬電極136。而所有第一金屬電極136的面積總和相對於金屬層134的面積比為大約0.2%至大約1%。 In an embodiment of the present disclosure, FIG. 2B is a linearly patterned patterned metal 135 including a plurality of linear first metal electrodes 136. The area ratio of all the first metal electrodes 136 to the metal layer 134 is about 0.2% to about 1%.
請參照第3圖以及第4A圖至第4M圖,第3圖繪示根據本揭示文件之一實施例中太陽能電池的製造方法300的流程圖。第4A圖至第4M圖為根據第3圖所示之製造方法300所形成之太陽能電池100依不同步驟的剖面示意圖。本實施例之太陽能電池的製造方法基本上係由以下步驟所組成,此處所指的「基本上由以下步驟所組成」是表示本實施例所提供的方法中,除了以下所提到的步驟之外,不排除如搬運、清洗等常規的製程步驟,合先敘明。 Please refer to FIG. 3 and FIGS. 4A-4M, and FIG. 3 is a flow chart of a method 300 for fabricating a solar cell according to an embodiment of the present disclosure. 4A to 4M are schematic cross-sectional views of the solar cell 100 formed according to the manufacturing method 300 shown in FIG. 3 according to different steps. The manufacturing method of the solar cell of the present embodiment basically consists of the following steps, and the phrase "consisting essentially of the following steps" means that the method provided in the embodiment is in addition to the steps mentioned below. In addition, conventional process steps such as handling and cleaning are not excluded, and are described first.
如第3圖以及第4A圖所示,步驟S301為提供一基板。第4A圖為步驟S301之一實施例,提供一N型的半導體基板110,其具有上表面120和下表面130。一般而言,上表面是用以接收太陽光線,而上表面120與下表面130為基板110的相對兩側表面。 As shown in FIG. 3 and FIG. 4A, step S301 is to provide a substrate. 4A is an embodiment of step S301, providing an N-type semiconductor substrate 110 having an upper surface 120 and a lower surface 130. In general, the upper surface is for receiving sunlight, and the upper surface 120 and the lower surface 130 are opposite side surfaces of the substrate 110.
如第3圖以及第4B圖所示,步驟S302為粗糙化基板110的上表面120。第4B圖為步驟S302之一實施例,使用鹼蝕刻來粗糙化基板110的上表面120,藉以在上表面120上形成金字塔狀的結構。一般而言,表面粗糙化的品質主要取決於基板110的潔淨度、蝕刻液的濃度及其比例、蝕刻液的溫度和反應的時間。將基板110的上表面120粗糙化處理的目的在於提升光線的接收率,以避免光線直接被光滑的上表面120反射。 As shown in FIGS. 3 and 4B, step S302 is to roughen the upper surface 120 of the substrate 110. 4B is an embodiment of step S302, which uses alkali etching to roughen the upper surface 120 of the substrate 110, thereby forming a pyramid-like structure on the upper surface 120. In general, the quality of surface roughening mainly depends on the cleanliness of the substrate 110, the concentration and ratio of the etching solution, the temperature of the etching solution, and the reaction time. The purpose of roughening the upper surface 120 of the substrate 110 is to increase the light receiving rate to prevent the light from being directly reflected by the smooth upper surface 120.
如第3圖以及第4C圖所示,步驟S303為對基板110進行硼擴散。第4C圖為步驟S303之一實施例,硼擴散包含使用含硼的氣體,例如B2H6加上氧氣,在高溫擴散爐管進行擴散。當硼離子擴散完成之後,氣體中所含的硼離子會擴散進入基板110的上表面120形成P型的射極擴散層121。硼離子擴散的擴散深度決定於氣體中硼的濃度、氣體的流量、反應時間以及爐管的溫度。在進行硼離子擴散的同時,半導體基板110的矽晶表面會和空氣中和氧氣或水氣作用,尤其是加熱造成的熱氧化效應,因此在太陽能電池100的基板110的上表面120形成硼酸玻璃125。 As shown in FIG. 3 and FIG. 4C, step S303 is to perform boron diffusion on the substrate 110. 4C graph of step S303 one embodiment, boron diffusion using gas containing boron, for example, B 2 H 6 plus oxygen gas is diffused in high temperature diffusion furnace tube. After the boron ion diffusion is completed, the boron ions contained in the gas diffuse into the upper surface 120 of the substrate 110 to form a P-type emitter diffusion layer 121. The diffusion depth of boron ion diffusion is determined by the concentration of boron in the gas, the flow rate of the gas, the reaction time, and the temperature of the tube. While the boron ion is diffused, the twinned surface of the semiconductor substrate 110 reacts with oxygen or moisture in the air, especially the thermal oxidation effect caused by the heating, so that boric acid glass is formed on the upper surface 120 of the substrate 110 of the solar cell 100. 125.
步驟S303是使用硼作為P型材料,在高溫爐管中對N型矽晶元作摻雜,以形成P-N接面。光線經過太陽能電池100內的上述P-N介面即可以產生電流。在本實施例中,使用硼作為P型材料,但是其他三價的金屬材料亦在本揭示文件所保護的範圍之中。 In step S303, boron is used as a P-type material, and N-type germanium crystal cells are doped in a high-temperature furnace tube to form a P-N junction. Light can be generated by passing the light through the P-N interface in the solar cell 100. In the present embodiment, boron is used as the P-type material, but other trivalent metal materials are also within the scope of the present disclosure.
如第3圖以及第4D圖所示,步驟S304為進行硼 酸玻璃125的去除。第4D圖為步驟S304之一實施例,將太陽能電池100的基板110浸泡於酸性溶液,以將基板110上表面120的硼酸玻璃125溶解。 As shown in FIG. 3 and FIG. 4D, step S304 is performed for boron. Removal of acid glass 125. 4D is an embodiment of step S304, in which the substrate 110 of the solar cell 100 is immersed in an acidic solution to dissolve the boric acid glass 125 on the upper surface 120 of the substrate 110.
如第3圖以及第4E圖所示,步驟S305為於基板110的下表面130形成薄氧層131。第4E圖為步驟S305之一實施例,使用高溫硝酸或臭氧製程於太陽能電池100的基板110的下表面130形成薄氧層131。任何其他可以在太陽能電池100的板110的下表面130形成薄氧層131的材質皆在本揭示文件所保護的範圍之中。 As shown in FIGS. 3 and 4E, step S305 is to form a thin oxygen layer 131 on the lower surface 130 of the substrate 110. 4E is an embodiment of step S305 in which a thin oxygen layer 131 is formed on the lower surface 130 of the substrate 110 of the solar cell 100 using a high temperature nitric acid or ozone process. Any other material that can form the thin oxygen layer 131 on the lower surface 130 of the panel 110 of the solar cell 100 is within the scope of the present disclosure.
如第3圖以及第4F圖所示,步驟S306為在射極擴散層121上沉積形成鈍化層122。第4F圖為步驟S306之一實施例,在太陽能電池100的P型的射極擴散層121進行氧化鋁沉積,在P型的射極擴散層121使用氧化鋁鈍化層122,不但不會形成反轉層造成漏電,反而會增加P型的射極擴散層121中多子濃度,降低少子濃度,從而降低表面複合速率。在本實施例中,使用氧化鋁作為鈍化層122沉積,但是其他可作為鈍化層122沉積的材料亦在本揭示文件所保護的範圍之中。 As shown in FIG. 3 and FIG. 4F, step S306 is to form a passivation layer 122 on the emitter diffusion layer 121. 4F is an embodiment of step S306, in which an alumina deposition is performed on the P-type emitter diffusion layer 121 of the solar cell 100, and an alumina passivation layer 122 is used in the P-type emitter diffusion layer 121, which not only does not form an inverse The transfer layer causes leakage, which in turn increases the multi-sub-concentration of the P-type emitter diffusion layer 121, reducing the minority concentration, thereby reducing the surface recombination rate. In the present embodiment, alumina is used as the passivation layer 122 for deposition, but other materials that can be deposited as the passivation layer 122 are also within the scope of the present disclosure.
如第3圖以及第4G圖所示,步驟S307為在鈍化層122上沉積形成抗反射層123。第4G圖為步驟S307之一實施例,對太陽能電池100的鈍化層122進行氮化矽抗反射層123沉積。此步驟是利用化學沉積在太陽能電池100鈍化層122上鍍一層氮化矽,以降低光的反射率。在本實施例中,使用及氮化矽作為抗反射層123沉積,但是其他可作為抗反射層123沉積的材料亦在本揭示文件所保護的範圍之中。 As shown in FIG. 3 and FIG. 4G, step S307 is to form an anti-reflection layer 123 on the passivation layer 122. FIG. 4G is an embodiment of step S307, in which the passivation layer 122 of the solar cell 100 is deposited with a tantalum nitride anti-reflective layer 123. This step is to deposit a layer of tantalum nitride on the passivation layer 122 of the solar cell 100 by chemical deposition to reduce the reflectance of light. In the present embodiment, germanium nitride is deposited and used as the anti-reflective layer 123, but other materials which can be deposited as the anti-reflective layer 123 are also within the scope of the present disclosure.
如第3圖以及第4H圖所示,步驟S308為在在薄氧層進行微晶磷擴散沉積形成結晶層。第4H圖為步驟S308之一實施例,對太陽能電池100的薄氧層131進行微晶磷擴散沉積,以在薄氧層131上沉積結晶層132。 As shown in FIG. 3 and FIG. 4H, step S308 is to form a crystal layer by performing microcrystalline phosphorus diffusion deposition on the thin oxygen layer. 4H is an embodiment of step S308, in which the thin oxygen layer 131 of the solar cell 100 is subjected to microcrystalline phosphorus diffusion deposition to deposit a crystal layer 132 on the thin oxygen layer 131.
如第3圖以及第4I圖所示,步驟S309為在在結晶層132沉積形成絕緣層133。第4G圖為步驟S309之一實施例,對太陽能電池100的結晶層132進行化矽或氮化矽等絕緣層133沉積。絕緣層133沉積是為了使結晶層132不要接觸到金屬層134,若結晶層132接觸到金屬層134會造成金屬層的電被導出而使結晶層132形成缺陷。在本實施例中,絕緣層133的材質可以是二氧化矽或氮化矽,但是其他可作為絕緣層133沉積的材料亦在本揭示文件所保護的範圍之中。 As shown in FIG. 3 and FIG. 4I, step S309 is to form an insulating layer 133 on the crystal layer 132. 4G is an embodiment of step S309, in which the crystal layer 132 of the solar cell 100 is deposited with an insulating layer 133 such as ruthenium or tantalum nitride. The insulating layer 133 is deposited so that the crystalline layer 132 does not contact the metal layer 134. If the crystalline layer 132 contacts the metal layer 134, the electrical conductivity of the metal layer is induced to cause the crystalline layer 132 to form defects. In the present embodiment, the material of the insulating layer 133 may be ceria or tantalum nitride, but other materials which can be deposited as the insulating layer 133 are also within the scope of the present disclosure.
如第3圖以及第4J圖所示,步驟S310為在抗反射層123上印刷多個第二金屬電極124。第4J圖為步驟S310之一實施例,對太陽能電池100進行正面電極印刷。此步驟是透過絲網印刷將銀鋁印在第二金屬電極124,其他的可用在第二金屬電極124的金屬亦在本揭示文件所保護的範圍之中。 As shown in FIG. 3 and FIG. 4J, step S310 is to print a plurality of second metal electrodes 124 on the anti-reflection layer 123. FIG. 4J is an embodiment of step S310 for performing front electrode printing on the solar cell 100. This step is to print silver aluminum on the second metal electrode 124 by screen printing, and other metals that can be used in the second metal electrode 124 are also within the scope of the present disclosure.
如第3圖以及第4K圖所示,步驟S311是在該絕緣層中開設多個通孔且這些通孔彼此間隔並暴露該結晶層之一部分。第4K圖為步驟S311之一實施例,在太陽能電池100的絕緣層133中開設多個通孔,這些通孔彼此間隔並暴露該結晶層132之一部分。在本實施例中,這些通孔的排列 是如第2A圖所示的點狀排列,其他不同的尺寸和排列,例如第2B圖所示的條狀排列,且相對金屬層134的面積比為大約0.2%至1%,亦在本揭示文件所保護的範圍之中。 As shown in FIG. 3 and FIG. 4K, step S311 is to open a plurality of through holes in the insulating layer and the through holes are spaced apart from each other and expose a portion of the crystal layer. 4K is an embodiment of step S311 in which a plurality of through holes are formed in the insulating layer 133 of the solar cell 100, and the through holes are spaced apart from each other and expose a portion of the crystal layer 132. In this embodiment, the arrangement of the through holes It is a dot arrangement as shown in FIG. 2A, and other different sizes and arrangements, such as the strip arrangement shown in FIG. 2B, and the area ratio of the metal layer 134 is about 0.2% to 1%, also in the present disclosure. Among the scope protected by the document.
如第3圖以及第4L圖所示,步驟S312為印刷圖案化金屬135,且圖案化金屬135包含多個第一金屬電極136分別位於那些通孔中。第4L圖為步驟S312之一實施例,在太陽能電池100的絕緣層133印刷圖案化金屬135,而圖案化金屬135包含多個第一金屬電極136。此步驟是透過絲網印刷將銀用給定的尺寸和排列方式將上述多個第一金屬電極136至於絕緣層133的多個通孔中。在本實施例中,第一金屬電極136的材質為含鉛銀膠,其中形成含鉛銀膠的方法係為印刷法、噴墨塗佈法或其它合適的方法。 As shown in FIGS. 3 and 4L, step S312 is to print the patterned metal 135, and the patterned metal 135 includes a plurality of first metal electrodes 136 respectively located in those through holes. 4L is an embodiment of step S312 in which the patterned metal 135 is printed on the insulating layer 133 of the solar cell 100, and the patterned metal 135 includes a plurality of first metal electrodes 136. This step is to apply the plurality of first metal electrodes 136 to the plurality of through holes of the insulating layer 133 in a given size and arrangement by screen printing. In the present embodiment, the material of the first metal electrode 136 is lead-containing silver paste, and the method for forming the lead-containing silver paste is a printing method, an inkjet coating method or other suitable methods.
如第3圖以及第4M圖所示,步驟S313為在絕緣層133以及圖案化金屬135上印刷金屬層134。第4M圖為步驟S313之一實施例,在太陽能電池100中,圖案化金屬135的多個第一金屬電極136的兩端分別電性連接結晶層132以及金屬層134。在本實施例中,金屬層134的材質為鋁,但是其他可以導電和反光的金屬亦在本揭示文件所保護的內容之中。 As shown in FIG. 3 and FIG. 4M, in step S313, the metal layer 134 is printed on the insulating layer 133 and the patterned metal 135. 4M is an embodiment of step S313. In the solar cell 100, two ends of the plurality of first metal electrodes 136 of the patterned metal 135 are electrically connected to the crystal layer 132 and the metal layer 134, respectively. In the present embodiment, the metal layer 134 is made of aluminum, but other conductive and reflective metals are also within the scope of the present disclosure.
綜上所述,本案所提供的太陽能電池及其製造方法300可使用很低的成本,並且有效的利用光線。如此一來,可以做出高效率的太陽能電池。 In summary, the solar cell and the method of manufacturing the same provided by the present invention can use very low cost and utilize light efficiently. In this way, a highly efficient solar cell can be made.
雖然本案已以實施方式揭露如上,然其並非限定本案,任何熟習此技藝者,在不脫離本案之精神和範圍內,當 可作各種之更動與潤飾,因此本案之保護範圍當視後附之申請專利範圍所界定者為準。 Although the present invention has been disclosed in the above embodiments, it is not intended to limit the case, and any person skilled in the art, without departing from the spirit and scope of the case, Various changes and refinements may be made, so the scope of protection of this case is subject to the definition of the scope of the patent application attached.
Claims (9)
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW318286B (en) * | 1995-11-22 | 1997-10-21 | Ebara Solar Inc | |
| CN102598311A (en) * | 2009-08-25 | 2012-07-18 | 荷兰能源建设基金中心 | Solar cell and method for manufacturing such a solar cell |
| TW201316541A (en) * | 2011-06-24 | 2013-04-16 | Rena Gmbh | Method for manufacturing metal through solar cell |
| CN103603053A (en) * | 2013-11-15 | 2014-02-26 | 中电电气(南京)光伏有限公司 | Method for preparing crystalline silicon solar cells |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW318286B (en) * | 1995-11-22 | 1997-10-21 | Ebara Solar Inc | |
| CN102598311A (en) * | 2009-08-25 | 2012-07-18 | 荷兰能源建设基金中心 | Solar cell and method for manufacturing such a solar cell |
| TW201316541A (en) * | 2011-06-24 | 2013-04-16 | Rena Gmbh | Method for manufacturing metal through solar cell |
| CN103603053A (en) * | 2013-11-15 | 2014-02-26 | 中电电气(南京)光伏有限公司 | Method for preparing crystalline silicon solar cells |
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