TWI645261B - Illumination optical system, lithography apparatus, and article manufacturing method - Google Patents
Illumination optical system, lithography apparatus, and article manufacturing method Download PDFInfo
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- 230000003287 optical effect Effects 0.000 title claims abstract description 192
- 238000005286 illumination Methods 0.000 title claims abstract description 63
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- 238000001459 lithography Methods 0.000 title claims description 3
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
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- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
- G03F7/70833—Mounting of optical systems, e.g. mounting of illumination system, projection system or stage systems on base-plate or ground
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70591—Testing optical components
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70758—Drive means, e.g. actuators, motors for long- or short-stroke modules or fine or coarse driving
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- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Optical Elements Other Than Lenses (AREA)
- Microscoopes, Condenser (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
提供利用來自光源的光而照射於被照明面的照明光學系統。照明光學系統,係具有:配置於光源與被照明面之間的光學積分器、具有就入射於光學積分器的光的強度進行調整的調整部的濾光器。光學積分器,係將所入射的光以內面予以反射的桿型光學積分器。照明光學系統,係透過就與照明光學系的光軸垂直的方向上的調整部的位置進行變更從而變更被照明面上的照度。An illumination optical system that illuminates the illuminated surface with light from the light source is provided. The illumination optical system includes an optical integrator disposed between the light source and the illuminated surface, and an optical filter having an adjustment unit for adjusting the intensity of the light incident on the optical integrator. An optical integrator is a rod-type optical integrator that reflects incident light on the inner surface. The illumination optical system changes the illuminance on the illumination surface by changing the position of the adjustment unit in a direction perpendicular to the optical axis of the illumination optical system.
Description
[0001] 本發明,有關照明光學系統、光刻裝置及物品製造方法。[0001] The present invention relates to an illumination optical system, a lithography apparatus, and an article manufacturing method.
[0002] 在將形成於遮罩的圖案投影於塗佈抗蝕層等的感光性材料的基板的曝光裝置方面,要求提升在遮罩面、基板面等的被照明面上的照度均勻性。作為使照度均勻性提升的手法,已知採用具備桿型光學積分器的照明光學系統。採用桿型光學積分器,使得透過將來自因應於桿體內的內面反射次數而形成的二次光源的照明光在桿體射出端予以重疊,從而可將在桿體射出面的照度分布均勻化。 [0003] 然而,在具備桿型光學積分器的照明光學系統方面,係由於光學系統的汙損、偏心、抗反射膜不均等各種的因素,因而存在結果上於被照明面上的照度分布方面確認到不均勻性的情況。就此課題,專利文獻1係揭露一構成,該構成係在與桿型光學積分器的射出面成為光學上共軛的關係的位置,配置與複數個二次光源影像對應而設的複數個光量調整部。 [0004] 然而,在揭露於專利文獻1的照明光學系統,係一旦決定聚光於被照明面的角度分布(以下稱為「有效光源分布」),則被照明面上的照度分布校正量成為固定。因此,難以校正因抗反射膜的成膜狀態、組裝精度等而發生的各機體固有的照度不均勻性(以下稱為「照度不均」)。此外,長期間使用裝置使得光學元件劣化,照度不均歷時變化的情況下,係需要酌情交換調整部。 [先前技術文獻] [專利文獻] [0005] [專利文獻1]日本專利特開2000-269114號[0002] In an exposure apparatus for projecting a pattern formed on a mask onto a substrate on which a photosensitive material such as a resist layer is applied, it is required to improve illuminance uniformity on an illuminated surface such as a mask surface or a substrate surface. As a method of improving illuminance uniformity, an illumination optical system including a rod type optical integrator is known. The rod type optical integrator is used to superimpose the illumination light from the secondary light source formed by the number of times of the inner surface reflection in the rod body at the rod emitting end, thereby uniformizing the illuminance distribution on the rod emitting surface . [0003] However, in the illumination optical system including the rod-type optical integrator, there are various factors such as staining, eccentricity, and unevenness of the anti-reflection film of the optical system, and thus there is a result of illuminance distribution on the illuminated surface. Confirm the case of unevenness. To solve this problem, Patent Document 1 discloses a configuration in which a plurality of light amount adjustments are provided corresponding to a plurality of secondary light source images at a position that is optically conjugate with the emission surface of the rod-type optical integrator. unit. [0004] However, in the illumination optical system disclosed in Patent Document 1, when the angular distribution (hereinafter referred to as "effective light source distribution") of the illumination surface is determined, the illumination distribution correction amount on the illumination surface becomes fixed. Therefore, it is difficult to correct the illuminance unevenness (hereinafter referred to as "illuminance unevenness") which is unique to each machine body due to the film formation state of the antireflection film, the assembly accuracy, and the like. Further, in the case where the optical device is deteriorated by using the device for a long period of time and the illuminance unevenness changes over time, it is necessary to exchange the adjustment portion as appropriate. [Prior Art Document] [Patent Document] [0005] [Patent Document 1] Japanese Patent Laid-Open No. 2000-269114
[0006] 依本發明的態樣時,提供一種照明光學系統,利用來自光源的光就被照明面進行照明,具有配置於前述光源與前述被照明面之間的光學積分器、具有就入射於前述光學積分器的光的強度進行調整的調整部的濾光器,前述光學積分器係將所入射的光以內面予以反射的桿型光學積分器,前述濾光器包含在前述桿型光學積分器的射出端面形成彼此相同的方向的影像的複數個第1區域、在前述射出端面形成相對於前述影像具有鏡像的關係的影像的複數個第2區域,前述調整部係設於至少前述第1區域,透過就與前述照明光學系的光軸垂直的方向上的前述調整部的位置進行變更從而變更前述被照明面上的照度。[0006] According to an aspect of the present invention, an illumination optical system is provided that illuminates an illumination surface by light from a light source, and has an optical integrator disposed between the light source and the illumination surface, and is incident on a filter for an adjustment unit that adjusts an intensity of light of the optical integrator, wherein the optical integrator is a rod type optical integrator that reflects incident light on an inner surface, and the filter is included in the rod type optical integral a plurality of first regions in which the emission end faces of the device form images in the same direction, and a plurality of second regions in which the emission end faces have a mirror image relationship with respect to the image, and the adjustment portion is provided in at least the first region The region is changed by changing the position of the adjustment portion in a direction perpendicular to the optical axis of the illumination optical system to change the illuminance on the illumination surface.
[0008] 以下,參照圖式詳細說明有關本發明的實施方式。另外,本發明非限定於以下的實施方式者,以下的實施方式僅示出本發明的實施的具體例。此外,不見得在以下的實施方式之中所說明的特徵的組合的全部係為了解決本發明的課題所必須者。 [0009] <第1實施方式> 圖1,係就本實施方式相關的曝光裝置100的構成進行繪示的示意圖。曝光裝置100,係例如在半導體裝置的製程中的光刻程序所使用者,為將形成於光罩R(遮罩)的圖案的影像曝光(轉印)於作為基板的晶圓W上的投影型曝光裝置。於圖1,沿著晶圓W的法線方向取Z軸,在與晶圓W面平行的面內彼此垂直的方向取X軸與Y軸。曝光裝置100,係具備照明光學系統101、光罩台102、投影光學系統103、晶圓台104、控制部105。 [0010] 照明光學系統101,係調整來自光源的放電燈1的光(光束),照明於作為被照明區域的光罩R。放電燈1,係例如可為供應i射線(波長365nm)等的光的超高壓水銀燈。此外,不限於此,例如亦可使用供應248nm的波長的光的KrF準分子雷射、供應193nm的波長的光的ArF準分子雷射、供應157nm的波長的光的F2雷射。此外,以反射折射系統或反射系統而構成照明光學系統101及投影光學系統103的情況下,於光源方面亦可使用X射線、電子束等的帶電粒子束。 [0011] 光罩R,係例如石英玻璃製的主板(master plate),被形成應轉印於晶圓W上的圖案(例如電路圖案)。光罩台102,係保持光罩R而可動於X、Y的各軸方向。投影光學系統103,係將通過光罩R的光以既定的倍率投影於晶圓W上。晶圓W,係於表面上塗佈抗蝕層(感光性材料)的由例如單晶矽所成的基板。晶圓台104,係透過未圖示的晶圓夾具保持晶圓W,可動於X、Y、Z(有時包含個別的旋轉方向的ωx、ωy、ωz)的各軸方向。晶圓台104,係可透過晶圓台驅動部114而驅動。 [0012] 照明光學系統101,係從放電燈1朝作為被照明區域的光罩R依序包含橢圓鏡2、第1中繼光學系統3、光學積分器4、第2中繼光學系統5。橢圓鏡2,係將從放電燈1所放射的光(光束)聚光於第2焦點位置F2的聚光鏡。放電燈1的管部內的發光部,係配置於例如橢圓鏡2的第1焦點F1的附近。作為成像光學系統的第1中繼光學系統3,係包含由單數或複數個透鏡所成的透鏡前群3a(第1透鏡)、由單數或複數個透鏡所成的透鏡後群3b(第2透鏡)。透鏡前群3a,係使來自光源的光為平行光。透鏡後群3b,係將透過透鏡後群3a成為平行光的光聚光於光學積分器4的入射端面4a。透過此等透鏡前群3a與透鏡後群3b,使得第2焦點位置F2與光學積分器4的入射端面4a成為光學共軛。於本實施方式,照明光學系統101,尤其包含第1中繼光學系統3、光學積分器4、第2中繼光學系統5的光學系統的光軸係設為Z軸方向。 [0013] 於本實施方式,光學積分器4,係一桿型光學積分器,其係將所入射的光在內面予以反射,依其反射次數而形成複數個二次光源影像。光學積分器4的形狀,係例如四角柱。亦即,光學積分器4的與XY平面平行的入射端面及射出端面的形狀,係成為與被照明面相似的長方形。雖說如此,如此的形狀僅為例示,並未意圖阻礙與光學積分器4具有同樣的作用的構材的適用。例如,光學積分器4亦可由在內部形成反射面的中空桿而構成。此外,光學積分器4的入射端面4a及射出端面4b的在XY平面的剖面形狀亦可為四角形以外的多角形。 [0014] 於放電燈1與光學積分器4之間,在與光罩R亦即與晶圓W共軛的共軛面S1的附近,與光軸垂直地配置濾光器6。濾光器6,係構成為可沿著XY平面而2維地移動,該移動係透過例如濾光器驅動部7而進行。濾光器6,係如示於圖1,例如被第1中繼光學系統3所包含,可配置於透鏡前群3a與透鏡後群3b之間。濾光器6,係具有複數個調整部,該等調整部係因應於由光學積分器4而形成的二次光源影像的個數而設,就入射於光學積分器4的光的強度進行調整。關於濾光器6的光學效應係後詳細說明。 [0015] 透鏡後群3b,係配置於從透過光學積分器4而形成的二次光源的虛像面S2的位置分離焦點距離的位置,從濾光器6與光軸大致平行而射出的照明光,係暫時聚光於此虛像面S2。 [0016] 光學積分器4的入射端面4a,係配置於虛像面S2的附近。透過透鏡後群3b而聚光的照明光,係在光學積分器4的內面被反射複數次而射出。從光學積分器4射出的照明光,係射出如正好從與反射次數對應的離散的二次光源的虛像出發。為此,從光學積分器4射出的照明光的角度,係相當於一種照明光的射出角度,該照明光係來自配置於虛像面S2的二次光源的虛像。 [0017] 光學積分器4的射出端面4b,係由配置於虛像面S2的複數個光源影像重疊,被同樣地照射。從光學積分器4的射出端面4b發出之光,係透射第2中繼光學系統5後,照明於作為被照明面的光罩R。第2中繼光學系統5,係包含由使來自光學積分器4的射出端面4b的光成為平行光的單數或複數個透鏡所成的透鏡前群5a。透鏡前群5a,係構成為可移動於第2中繼光學系統5的光軸方向(Z軸方向)。第2中繼光學系統5,係進一步包含由將以透鏡前群5a調為平行光的光聚光於被照明面的單數或複數個透鏡所成的透鏡後群5b。透鏡前群5a的移動係透過透鏡驅動部51進行。使透鏡前群5a移動於光軸方向,使得可一面實質上不改變焦點距離一面使失真變化。透過此作用,利用透鏡前群5a的移動,使得可使周邊照度提高降低。 [0018] 於本實施方式,光學積分器4的射出端面4b配置於透鏡前群5a的前側焦點位置,再者光學積分器4的射出端面4b,係與作為被照明面的光罩R成為光學共軛。另外嚴格而言,為了避免轉印光學積分器4的射出端面4b上的異物,可使射出端面4b的位置從共軛稍微偏移。並且,從光罩R射出的光,亦即遮罩圖案的影像,係經由投影光學系統103而轉印於晶圓W上。 [0019] 照度分布計測部115,係就作為被照明面的光罩R上的照度分布進行計測。控制部105,係就放電燈1、濾光器驅動部7、透鏡驅動部51、晶圓台驅動部114、照度分布計測部115進行控制。控制部105,係可包含記憶控制所需的各種資料的記憶部105a。 [0020] 接著,說明有關濾光器6的光學效應。圖2,係示意性就設於濾光器上的複數個調整部、和透過光學積分器4而形成的複數個二次光源的關係進行繪示的圖。圖2,係示出從濾光器6與光軸平行而射出的照明光的光路徑。設於濾光器6上的光軸上的調整部60,係就在光學積分器4的內面不被反射的來自二次光源40的光束的強度進行調整。此外,與調整部60的兩外側鄰接的一對的調整部61a、61b,係就來自在光學積分器4的內面被反射1次的二次光源影像41a、41b的光束的強度進行調整。再者,與調整部61a、61b的兩外側鄰接的一對的調整部62a、62b,係就來自在光學積分器4的內面被反射2次的二次光源影像42a、42b的光束的強度進行調整。依如此之構成時,可獨立就透過光學積分器4而形成的複數個二次光源個別的光束控制透射率。 [0021] 調整部60、61a、61b、62a、62b,係配置於與光學積分器4的射出端面4b共軛的共軛面S1的附近。因此,1個調整部的形狀,係與圖1的光罩R或晶圓W上的照明區域對應,調整部60、61a、61b、62a、62b的透射率分布,係反映於在晶圓W上的照明區域的照度分布。 [0022] 圖3A,係就在濾光器6的各調整部與光學積分器4的射出端面4b的成像關係進行說明的圖。在光學積分器4,係來自相鄰的二次光源的光束成為反轉。為此,在光學積分器4的射出端面4b所形成的影像的方向成為「F」時,相鄰的調整部的影像成為逆向,彼此成為鏡像關係。 [0023] 圖3B,係就配置於共軛面S1的附近的濾光器6從入射側視看時的示意圖。在此,係作為調整部運用圖案濾鏡(或遮光構材)。於本實施方式,構成複數個調整部的複數個圖案濾鏡,係配置於與光學積分器4的複數個二次光源影像方面的鏡像關係對應的濾光器上的既定的位置。濾光器6,係包含複數個第1區域A、B、屬第1區域以外的區域的複數個第2區域。於此,複數個第1區域A、B,係在光學積分器4的射出端面4b形成彼此相同的方向的影像的區域。此外,複數個第2區域,係在光學積分器4的射出端面4b形成相對於第1區域的影像具有鏡像的關係的影像的區域。於本實施方式,於濾光器6的表面,係與光學積分器4的複數個二次光源影像對應,長方形的圖案濾鏡6A、6B分別配置於複數個第1區域A、B。另外,圖案濾鏡6A、6B,係可配置於複數個第1區域A、B的至少一部分的區域,而非全部。 [0024] 在本實施方式,係作為圖案濾鏡6A、6B,配置大小不同的圓形的圖案濾鏡,從而使各圖案濾光器部分具有如示於圖4(A)、(B)的效果。使各圖案濾光器的徑、透射率、配置等為適切,使得最後於被照明面,如表示圖4(A)、(B)的總和的圖4(C),獲得與像高的近似2次方成比例而提高被照明面的周邊部的照度的效果。 [0025] 一般情況下,於投影曝光裝置的照明光學系統,欲使在被照明面的數值孔徑的均勻性與照度分布的均勻性同時成立時,由於用於透鏡的抗反射膜的角度特性因而存在周邊的照度降低之傾向。為此,如本實施方式般具有提高周邊的照度的作用的濾光器係對於照度分布的校正為有效。 [0026] 此外,入射於光學積分器4的光束,係調整為相對於光軸具有對稱的照度分布。藉此,被照明面的有效光源分布係相對於主光線成為對稱,故對於散焦不產生影像偏移。藉此,可實現良好的遠心下的曝光。 [0027] 萬一,入射於光學積分器4的照明光相對於光軸具有非對稱的照度分布的情況下,係喪失有效光源分布的對稱性,以遠心的偏差如此的形式對於影像性能造成影響。反之依本實施方式時,使圖案濾鏡的配置為光軸對稱故幾乎不產生遠心的偏差。 [0028] 在本實施方式,係作為調整部雖使用圖案濾鏡6A、6B的2種類,惟例如透過改變微細的點圖案的密度,使得亦能以1種類的圖案形成與像高的近似2次方成比例的照度分布。 [0029] 在以下,係說明有關如示於圖5A的照度不均的校正方法。圖5A的照度不均,係可分解為:如示於圖5B的傾斜狀的照度不均;如示於圖5C的形成光軸對稱的圓弧狀、越往周邊時照度越降的照度不均。此等,係可透過從照度分布算出像高別平均照度及傾斜成分而分離。 [0030] 首先,說明有關圖5B的傾斜狀的照度不均的校正方法。如前述般本實施方式的濾光器6係具有與像高的大致2次方成比例而提高周邊部的照度的效果。此時,使光學積分器4的入射端面4a,相當於被照明面,採經正規化的XY座標系時,透過濾光器6所達成的照度分布調整的效果z,係記為z=a(x2 +y2 )。於此,a係常數。 [0031] 濾光器6的圖案濾鏡6A、6B,係配置於在光學積分器4的射出端面4b形成彼此相同的方向的影像的複數個第1區域A、B的至少一部分。濾光器6,係可移動於沿著複數個第1區域A、B、和屬其以外的區域的複數個第2區域的方向,亦即可移動於沿著XY平面的方向。亦即,可變更與照明光學系統的光軸(Z軸)垂直的方向(X方向或Y方向)上的濾光器6的位置。於此,即使令濾光器6移動於沿著XY平面的方向,透過圖案濾鏡6A、6B而給予的在被照明面的照度分布變化的效果仍不會彼此消除。 [0032] 因此,透過使濾光器6於X方向及Y方向移動既定距離δ時的濾光器6所達成的照度分布調整的效果z’,係記為z’=a((x+δ)2 +(y+δ)2 )。於此,a係常數。亦即,產生依存於δ的x、y的1次項,故可予以產生傾斜狀的照度分布。 [0033] 圖6,係就傾斜狀的照度不均的校正順序進行繪示的流程圖。於S601,控制部105,係基於以照度分布計測部115所計測的照度分布資料,計算在被照明面的照度不均(照度不均測定1)。使在被照明面的照度值的最大值為Smax、使最小值為Smin時,照度不均S係透過例如下式而算出。 S=(Smax-Smin)/(Smax+Smin) [0034] 之後,控制部105,係在S602使濾光器6朝X方向移動既定距離δ,在S603測定在被照明面的照度不均(照度不均測定2)。接著,控制部105,係在S604使濾光器6朝Y方向移動既定距離δ,在S605測定在被照明面的照度不均(照度不均測定3)。之後,控制部105,係在S606,從照度不均測定1、2、3的結果計算照度不均的變化量,記憶於記憶部105a。此變化量對應於上述的傾斜狀的照度分布的斜率。 [0035] 接著在S607,控制部105,係基於在S606所算出的變化量,而計算濾光器6的移動方向與移動量。並且,控制部105,係透過濾光器驅動部7,使濾光器6朝所計算的方向移動所計算的移動量。 [0036] 之後,在S609,控制部105,係再度測定在被照明面上的照度不均(照度不均測定4),在S610,確認該照度不均是否落入既定的容許範圍內。此處若照度不均落入容許範圍內,則處理結束。另一方面,若照度不均未落入容許範圍內,則處理進至S611,回授照度不均測定4的結果,返回S607,再計算濾光器6的移動方向與移動量。 [0037] 接著,就圖5C的光軸對稱的照度不均的校正方法,參照圖7的流程圖進行說明。發生光軸對稱的照度不均的情況下,係調整周邊照度校正量。如上所述,第2中繼光學系統5,係具備如下構成:透過使透鏡前群5a移動於光軸方向,使得一面實質上不改變焦點距離一面使失真變化。藉此,利用透鏡前群5a的移動,使得可使周邊照度提高降低。 [0038] 控制部105,係在S701,透過照度分布計測部115,求出使透鏡前群5a朝光軸方向移動既定距離δ時的被照明面的最外周部的照度的變化量,將此變化量記憶於記憶部105a(照度不均測定1)。另外,此S701,係亦可透過模擬等事先進行。在S702,控制部105,係基於此變化量,計算朝透鏡前群5a的光軸方向的移動量。在S703,控制部105,係透過透鏡驅動部51,使透鏡前群5a朝光軸方向,移動所計算的移動量。 [0039] 之後,在S704,控制部105,係再度求出使透鏡前群5a朝光軸方向移動既定距離δ時的被照明面的最外周部的照度的變化量(照度不均測定2),在S705,確認該變動量是否落入既定的容許範圍內。此處變動量落入容許範圍內時,處理結束。另一方面,只要變動量未落入容許範圍內,則處理進至S706,回授照度不均測定2的結果,返回S703,再計算濾光器6的移動量。如此,控制部105,係以從透過照度分布計測部115而計測的照度分布所計算的照度不均落入容許範圍內的方式回授控制濾光器6的移動量。 [0040] 透過進行以上說明的依照圖6的控制順序下的濾光器6的移動、依照圖7的控制順序下的透鏡前群的驅動雙方,使得可進行更精密的校正。此時,透過控制部105下的圖6的控制順序與圖7的控制順序係可按照時序列而串列執行,亦可並列執行。 [0041] 另外,圖6的控制順序與圖7的控制順序個別的執行結果,係可記憶於記憶部105a。以相同照明條件再度執行時,係可從記憶部105a叫出執行結果而將各要素予以驅動至最佳位置。藉此,可省略如圖6、圖7的順序,而迅速進行傾斜狀的照度不均及同心圓狀的照度不均(光軸對稱的照度不均)的校正。 [0042] 此外,長期間使用照明光學系統時,可想像裝置內的任一個透鏡的透射率劣化,發生旋轉非對稱的傾斜狀的照度不均。如此的情況下,亦可透過再度執行圖6及圖7的控制順序,從而進行傾斜狀的照度不均及同心圓狀的照度不均(光軸對稱的照度不均)的校正。 [0043] 另外,例如,在日本專利特開2001-135564號公報,係在複數個微小透鏡被2維地以既定之間距而排列的光學積分器的入射面附近,配置濾光器。濾光器,係具有可就與構成光學積分器的複數個微小透鏡分別對應的複數個區域的透射光量進行調整的光量調整部。透過如此的構成,亦可使濾光器沿著XY平面內而移動從而進行照度不均的控制。 [0044] 然而,複數個微小透鏡被2維地以既定之間距而排列的光學積分器,係一般而言高價,故依本實施方式下的桿型光學積分器較為低成本。依使用桿型光學積分器的本實施方式的構成時,利用如示於圖3A的成像關係而決定各調整部的配置處。具體而言,複數個調整部,係以透過透射複數個調整部各者的光而形成於桿型光學積分器的射出端面的各調整部的影像的方向成為相同的方向的方式,配置於濾光器上。據此可進行照度不均控制。 [0045] <第2實施方式> 接著,說明有關第2實施方式相關的照明光學系統。裝置的示意構成係如同圖1。圖3C,係從入射側視看本實施方式相關的濾光器6時的示意圖。於此濾光器6的表面,係與光學積分器4的複數個二次光源影像對應,長方形的圖案濾鏡6C被配置於複數個第1區域C,長方形的圖案濾鏡6D被配置於複數個第2區域D。另外,圖案濾鏡6C、6D係分別可配置於複數個第1區域C及複數個第2區域D的至少一部分的區域,而非全部。於此,複數個第1區域C,係在光學積分器4的射出端面4b形成彼此相同的方向的影像的區域。此外,複數個第2區域D,係在光學積分器4的射出端面4b形成相對於複數個第1區域C的影像具有鏡像的關係的影像的區域。 [0046] 在本實施方式,於圖案濾鏡6C,係予以具有如圖8A的與像高的近似2次方成比例而提高被照明面的周邊部的照度的效果。此外,於圖案濾鏡6D,係予以具有其相反的特性,亦即予以具有如圖8B的與像高的近似2次方成比例而降低周邊部的照度的效果。透過如此的圖案濾鏡6C、6D的組合,從而構成為整體上照度分布變化的效果被彼此消除。 [0047] 以下,說明有關如圖9A的傾斜狀的照度不均的校正方法。使光學積分器4入射端面4a相當於被照明面,採經正規化的XY座標系時,濾光器6的效果z,係簡單上僅表示X方向1維時,成為z=ax2 -ax2 =0,不影響照度分布。於此,a係常數。 [0048] 使濾光器6朝X方向移動既定距離δ時的效果z’,在圖案濾鏡6C、6D係δ的方向改變,故記為z’=a(x+δ)2 -a(x-δ)2 。亦即,產生依存於δ的x的1次項,故可予以產生傾斜狀的照度分布。 [0049] 於本實施方式,亦透過執行與圖6的流程圖同樣的順序,從而可就傾斜狀的照度不均如圖9B般以成為平坦的方式進行校正。如此,本來2次形狀的周邊照度降低小,傾斜狀的照度不均具有支配性的情況下,係如本實施方式的調整部的構成對於照度分布的校正為有效。 [0050] <第3實施方式> 接著,說明有關第3實施方式相關的照明光學系統。在本實施方式,係第2實施方式中的圖案濾鏡6C、6D的效果不同。於本實施方式中的圖案濾鏡6C,係予以具有如圖10A的如照度分布與像高的近似3次方成比例而改變的效果。此外,於圖案濾鏡6D,係予以具有其相反的特性,亦即予以具有如圖10B的如照度分布與像高的近似3次方成比例而改變的效果。透過如此的圖案濾鏡6C、6D的組合,從而構成為整體上照度分布變化的效果被彼此消除。 [0051] 如同第2實施方式,濾光器6的效果z,係表示僅X方向1維時,成為z=ax3 -ax3 =0,不影響照度分布。於此,a係常數。 [0052] 使濾光器6朝X方向移動既定距離δ時的效果z’,係在圖案濾鏡6C、6D係δ的方向改變,故成為z’=a(x+δ)3 -a(x-δ)3 。在本實施方式,係產生依存於δ的x的2次項,故可予以產生同心圓狀的2次的照度分布。 [0053] 於本實施方式,亦可透過執行與圖6的流程圖同樣的順序,從而就如圖11A的2次形狀的照度分布,以如圖11B般成為平坦的方式進行校正。如此,本來無傾斜狀的照度不均,同心圓狀的2次照度不均具有支配性的情況下,係如本實施方式的調整部的構成對於照度分布校正為有效。 [0054] 另外,即使欲校正的照度分布為3次以後的高次形狀,仍可透過酌情設定圖案濾鏡的透射率分布,從而進行照度不均校正。 依以上的各實施方式時,提供對於照度不均的校正性能的提升為有利的技術。 [0055] <物品製造方法的實施方式> 本發明的實施方式中的物品製造方法,係例如適於製造半導體裝置等的微型裝置、具有微細構造的元件等的物品。本實施方式的物品製造方法,係包含利用上述的光刻裝置(曝光裝置、壓印裝置、描繪裝置等)在基板轉印主板的圖案的程序、對在該程序轉印圖案的基板進行加工的程序。再者,如此之製造方法,係包含其他周知的程序(氧化、成膜、蒸鍍、摻雜、平坦化、蝕刻、抗蝕層剝離、切割、接合、封裝等)。本實施方式的物品製造方法,係比起歷來的方法,有利於物品的性能、品質、生產性、生產成本中的至少1者。 [0056] 本發明非限定於上述實施方式者,不脫離本發明的精神及範圍之下,可進行各種變更及變形。因此,附上以下的請求項以公開本發明的範圍。[0008] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. The present invention is not limited to the following embodiments, and the following embodiments are merely illustrative of specific examples of the implementation of the present invention. Further, all of the combinations of the features described in the following embodiments are not necessarily required to solve the problems of the present invention. <First Embodiment> Fig. 1 is a schematic view showing the configuration of an exposure apparatus 100 according to the present embodiment. The exposure apparatus 100 is, for example, a user of a photolithography program in the process of manufacturing a semiconductor device, for exposing (transferring) an image formed on a pattern of a mask R (mask) onto a wafer W as a substrate. Type exposure device. In FIG. 1, the Z axis is taken along the normal direction of the wafer W, and the X axis and the Y axis are taken in directions perpendicular to each other in a plane parallel to the wafer W plane. The exposure apparatus 100 includes an illumination optical system 101, a mask stage 102, a projection optical system 103, a wafer stage 104, and a control unit 105. [0010] The illumination optical system 101 adjusts light (light beam) from the discharge lamp 1 of the light source, and illuminates the mask R as an illumination area. The discharge lamp 1 may be, for example, an ultrahigh pressure mercury lamp that supplies light such as i-rays (wavelength 365 nm). Further, not limited thereto, for example, a KrF excimer laser that supplies light of a wavelength of 248 nm, an ArF excimer laser that supplies light of a wavelength of 193 nm, and an F2 laser that supplies light of a wavelength of 157 nm may be used. Further, when the illumination optical system 101 and the projection optical system 103 are configured by a catadioptric system or a reflection system, a charged particle beam such as an X-ray or an electron beam can be used as the light source. [0011] The mask R is, for example, a master plate made of quartz glass, and is formed with a pattern (for example, a circuit pattern) to be transferred onto the wafer W. The mask stage 102 holds the mask R and is movable in the respective axial directions of X and Y. The projection optical system 103 projects the light passing through the mask R onto the wafer W at a predetermined magnification. The wafer W is a substrate made of, for example, a single crystal germanium coated with a resist layer (photosensitive material) on the surface. The wafer table 104 holds the wafer W through a wafer jig (not shown), and is movable in the respective axial directions of X, Y, and Z (sometimes including ωx, ωy, and ωz in individual rotation directions). The wafer table 104 is driven by the wafer table driving unit 114. The illumination optical system 101 sequentially includes the elliptical mirror 2, the first relay optical system 3, the optical integrator 4, and the second relay optical system 5 from the discharge lamp 1 to the mask R as an illumination region. The elliptical mirror 2 is a condensing mirror that condenses light (light beam) emitted from the discharge lamp 1 at the second focus position F2. The light-emitting portion in the tube portion of the discharge lamp 1 is disposed, for example, in the vicinity of the first focus F1 of the elliptical mirror 2. The first relay optical system 3 as the imaging optical system includes a lens front group 3a (first lens) formed of a single or a plurality of lenses, and a lens rear group 3b formed of a single or a plurality of lenses (second lens). The front group 3a of the lens causes the light from the light source to be parallel light. The lens rear group 3b condenses the light that has passed through the lens rear group 3a as parallel light to the incident end surface 4a of the optical integrator 4. The second focus position F2 and the incident end surface 4a of the optical integrator 4 are optically conjugated through the lens front group 3a and the lens rear group 3b. In the present embodiment, the illumination optical system 101 includes, in particular, the optical axis of the optical system of the first relay optical system 3, the optical integrator 4, and the second relay optical system 5 in the Z-axis direction. [0013] In the present embodiment, the optical integrator 4 is a rod-type optical integrator that reflects incident light on the inner surface and forms a plurality of secondary light source images according to the number of reflections. The shape of the optical integrator 4 is, for example, a quadrangular prism. That is, the shape of the incident end face and the exit end face parallel to the XY plane of the optical integrator 4 is a rectangle similar to the illuminated surface. Nevertheless, such a shape is merely illustrative and is not intended to impede the application of a member having the same function as the optical integrator 4. For example, the optical integrator 4 may be constituted by a hollow rod that forms a reflecting surface inside. Further, the cross-sectional shape of the incident end surface 4a and the output end surface 4b of the optical integrator 4 on the XY plane may be a polygon other than a square. [0014] Between the discharge lamp 1 and the optical integrator 4, the filter 6 is disposed perpendicular to the optical axis in the vicinity of the conjugate plane S1 which is conjugate with the mask R, that is, the wafer W. The filter 6 is configured to be movable two-dimensionally along the XY plane, and the movement is performed by, for example, the filter driving unit 7. The filter 6 is included in the first relay optical system 3, for example, as shown in Fig. 1, and is disposed between the lens front group 3a and the lens rear group 3b. The filter 6 has a plurality of adjustment sections that are set in accordance with the number of secondary light source images formed by the optical integrator 4, and are adjusted in intensity of light incident on the optical integrator 4. . The optical effect of the filter 6 will be described in detail later. [0015] The lens rear group 3b is disposed at a position where the focal length is separated from the position of the virtual image plane S2 of the secondary light source formed by the optical integrator 4, and is emitted from the filter 6 substantially parallel to the optical axis. , temporarily concentrated on this virtual image surface S2. [0016] The incident end surface 4a of the optical integrator 4 is disposed in the vicinity of the virtual image plane S2. The illumination light collected by the lens rear group 3b is reflected and reflected on the inner surface of the optical integrator 4 several times. The illumination light emitted from the optical integrator 4 is emitted as a virtual image from a discrete secondary light source corresponding to the number of reflections. Therefore, the angle of the illumination light emitted from the optical integrator 4 corresponds to an emission angle of the illumination light from the virtual image of the secondary light source disposed on the virtual image plane S2. [0017] The emission end surface 4b of the optical integrator 4 is superimposed on a plurality of light source images arranged on the virtual image plane S2, and is irradiated in the same manner. The light emitted from the emission end surface 4b of the optical integrator 4 is transmitted through the second relay optical system 5, and then illuminates the mask R as an illumination surface. The second relay optical system 5 includes a lens front group 5a formed of a single or a plurality of lenses that make the light from the emission end surface 4b of the optical integrator 4 into parallel light. The lens front group 5a is configured to be movable in the optical axis direction (Z-axis direction) of the second relay optical system 5. The second relay optical system 5 further includes a lens rear group 5b formed by singular or plural lenses that condense light that is adjusted to be parallel light by the lens front group 5a on the illumination surface. The movement of the lens front group 5a is performed by the lens driving unit 51. The lens front group 5a is moved in the optical axis direction so that the distortion can be changed without substantially changing the focal length. By this action, the movement of the lens front group 5a is utilized so that the peripheral illumination can be improved. [0018] In the present embodiment, the emission end surface 4b of the optical integrator 4 is disposed at the front focus position of the lens front group 5a, and the emission end surface 4b of the optical integrator 4 is optically connected to the mask R as the illumination surface. Conjugation. Further, strictly speaking, in order to avoid foreign matter on the emission end surface 4b of the optical integrator 4, the position of the emission end surface 4b can be slightly shifted from the conjugate. Further, the light emitted from the mask R, that is, the image of the mask pattern is transferred onto the wafer W via the projection optical system 103. [0019] The illuminance distribution measuring unit 115 measures the illuminance distribution on the mask R as the illumination surface. The control unit 105 controls the discharge lamp 1, the filter drive unit 7, the lens drive unit 51, the wafer stage drive unit 114, and the illuminance distribution measurement unit 115. The control unit 105 may include a memory unit 105a that stores various materials required for control. [0020] Next, the optical effect of the filter 6 will be described. 2 is a view schematically showing the relationship between a plurality of adjustment portions provided on the filter and a plurality of secondary light sources formed by the optical integrator 4. Fig. 2 is a view showing the light path of the illumination light emitted from the optical filter 6 in parallel with the optical axis. The adjustment portion 60 provided on the optical axis of the optical filter 6 adjusts the intensity of the light beam from the secondary light source 40 that is not reflected on the inner surface of the optical integrator 4. Further, the pair of adjustment portions 61a and 61b adjacent to both outer sides of the adjustment unit 60 adjust the intensity of the light beam from the secondary light source images 41a and 41b that are reflected once on the inner surface of the optical integrator 4. Further, the pair of adjustment portions 62a and 62b adjacent to the outer sides of the adjustment portions 61a and 61b are the intensity of the light beam from the secondary light source images 42a and 42b which are reflected twice on the inner surface of the optical integrator 4. Make adjustments. According to this configuration, the transmittance of the individual light beams of the plurality of secondary light sources formed by the optical integrator 4 can be independently controlled. [0021] The adjustment portions 60, 61a, 61b, 62a, and 62b are disposed in the vicinity of the conjugate plane S1 conjugate with the emission end surface 4b of the optical integrator 4. Therefore, the shape of one adjustment portion corresponds to the illumination region on the mask R or the wafer W of FIG. 1, and the transmittance distribution of the adjustment portions 60, 61a, 61b, 62a, and 62b is reflected on the wafer W. The illuminance distribution of the illuminated area above. 3A is a view for explaining an imaging relationship between each adjustment portion of the optical filter 6 and the emission end surface 4b of the optical integrator 4. In the optical integrator 4, the light beams from the adjacent secondary light sources are inverted. Therefore, when the direction of the image formed by the emission end surface 4b of the optical integrator 4 becomes "F", the images of the adjacent adjustment portions are reversed and have a mirror image relationship with each other. 3B is a schematic view of the optical filter 6 disposed in the vicinity of the conjugate plane S1 as seen from the incident side. Here, a pattern filter (or a light-shielding member) is used as the adjustment unit. In the present embodiment, the plurality of pattern filters constituting the plurality of adjustment units are disposed at predetermined positions on the filter corresponding to the mirror image relationship of the plurality of secondary light source images of the optical integrator 4. The filter 6 includes a plurality of first regions A and B and a plurality of second regions belonging to regions other than the first region. Here, the plurality of first regions A and B are regions in which the imaging end faces 4b of the optical integrator 4 form images in the same direction. Further, the plurality of second regions are regions in which the image of the image having a mirror image relationship with respect to the image of the first region is formed on the emission end surface 4b of the optical integrator 4. In the present embodiment, the surface of the optical filter 6 corresponds to a plurality of secondary light source images of the optical integrator 4, and the rectangular pattern filters 6A and 6B are disposed in the plurality of first regions A and B, respectively. Further, the pattern filters 6A and 6B may be disposed in at least a part of the plurality of first regions A and B, not all of them. [0024] In the present embodiment, circular pattern filters having different sizes are disposed as the pattern filters 6A and 6B, so that each pattern filter portion has the same as shown in FIGS. 4(A) and (B). effect. The diameter, transmittance, arrangement, and the like of each of the pattern filters are made appropriate so that the image is finally approximated to the illuminated surface, as shown in Fig. 4(C) showing the sum of Figs. 4(A) and (B). The effect of increasing the illuminance of the peripheral portion of the illuminated surface by the ratio of the second power. [0025] In general, in the illumination optical system of the projection exposure apparatus, when the uniformity of the numerical aperture of the illuminated surface and the uniformity of the illuminance distribution are simultaneously established, due to the angular characteristics of the anti-reflection film for the lens There is a tendency for the surrounding illuminance to decrease. Therefore, the filter having the function of improving the illuminance of the periphery as in the present embodiment is effective for correcting the illuminance distribution. Further, the light beam incident on the optical integrator 4 is adjusted to have a symmetrical illuminance distribution with respect to the optical axis. Thereby, the effective light source distribution of the illuminated surface is symmetrical with respect to the chief ray, so that no image shift occurs for defocusing. Thereby, good exposure under telecentricity can be achieved. [0027] In the event that the illumination light incident on the optical integrator 4 has an asymmetric illuminance distribution with respect to the optical axis, the symmetry of the effective light source distribution is lost, and the image performance is affected by the deviation of the telecentricity. . On the other hand, according to the present embodiment, the arrangement of the pattern filters is optically axisymmetric, so that there is almost no deviation in telecentricity. In the present embodiment, two types of pattern filters 6A and 6B are used as the adjustment unit. However, for example, by changing the density of the fine dot pattern, it is possible to form a pattern of one type and an image height. The proportional illuminance distribution of the power. [0029] In the following, a correction method relating to illuminance unevenness as shown in FIG. 5A will be described. The illuminance unevenness of FIG. 5A can be decomposed into: illuminance unevenness as shown in FIG. 5B; the illuminance which is symmetrical in the optical axis symmetry as shown in FIG. 5C, and the illuminance which decreases as the periphery is decreased All. These are separated by calculating the image height illuminance and the tilt component from the illuminance distribution. [0030] First, a method of correcting the illuminance unevenness in the inclined shape of FIG. 5B will be described. As described above, the optical filter 6 of the present embodiment has an effect of increasing the illuminance of the peripheral portion in proportion to the substantially square of the image height. At this time, when the incident end surface 4a of the optical integrator 4 corresponds to the illuminated surface and the normalized XY coordinate system is adopted, the effect z of the illuminance distribution adjustment achieved by the filter 6 is recorded as z=a. (x 2 +y 2 ). Here, a is a constant. The pattern filters 6A and 6B of the optical filter 6 are disposed on at least a part of the plurality of first regions A and B which form images in the same direction in the emission end surface 4b of the optical integrator 4. The filter 6 is movable in a direction along a plurality of first regions A, B, and a plurality of second regions in a region other than the other, or may be moved in a direction along the XY plane. That is, the position of the filter 6 in the direction (X direction or Y direction) perpendicular to the optical axis (Z axis) of the illumination optical system can be changed. Here, even if the filter 6 is moved in the direction along the XY plane, the effects of the illuminance distribution change on the illuminated surface given by the pattern filters 6A, 6B are not eliminated from each other. Therefore, the effect z' of the illuminance distribution adjustment achieved by the filter 6 when the filter 6 is moved by the predetermined distance δ in the X direction and the Y direction is denoted by z'=a ((x+δ) ) 2 + (y + δ) 2 ). Here, a is a constant. That is, since the first term of x and y depending on δ occurs, a illuminating distribution of a slope can be generated. [0033] FIG. 6 is a flow chart showing the order of correction of the illuminance unevenness in a slanting manner. In S601, the control unit 105 calculates the illuminance unevenness on the illuminated surface (the illuminance unevenness measurement 1) based on the illuminance distribution data measured by the illuminance distribution measuring unit 115. When the maximum value of the illuminance value on the illuminated surface is Smax and the minimum value is Smin, the illuminance unevenness S is calculated by, for example, the following equation. S=(Smax−Smin)/(Smax+Smin) [0034] Thereafter, the control unit 105 moves the filter 6 in the X direction by a predetermined distance δ in S602, and measures the illuminance unevenness on the illuminated surface in S603 ( Illumination unevenness measurement 2). Next, the control unit 105 moves the filter 6 in the Y direction by a predetermined distance δ in S604, and measures the illuminance unevenness on the illuminated surface in S605 (the illuminance unevenness measurement 3). Thereafter, the control unit 105 calculates the amount of change in illuminance unevenness from the results of the illuminance unevenness measurement 1, 2, and 3 in S606, and stores it in the storage unit 105a. This amount of change corresponds to the slope of the above-described oblique illuminance distribution. [0035] Next, in S607, the control unit 105 calculates the moving direction and the moving amount of the filter 6 based on the amount of change calculated in S606. Further, the control unit 105 passes through the filter driving unit 7 to move the filter 6 by the calculated amount of movement in the calculated direction. After that, in S609, the control unit 105 measures the illuminance unevenness on the illuminated surface again (the illuminance unevenness measurement 4), and in S610, it is confirmed whether or not the illuminance unevenness falls within a predetermined allowable range. Here, if the illuminance unevenness falls within the allowable range, the process ends. On the other hand, if the illuminance unevenness does not fall within the allowable range, the process proceeds to S611, and the result of the illuminance unevenness measurement 4 is returned, and the process returns to S607, and the moving direction and the moving amount of the filter 6 are calculated. [0037] Next, a method of correcting the illuminance unevenness of the optical axis symmetry of FIG. 5C will be described with reference to the flowchart of FIG. 7. When the illuminance unevenness of the optical axis symmetry occurs, the peripheral illuminance correction amount is adjusted. As described above, the second relay optical system 5 has a configuration in which the lens front group 5a is moved in the optical axis direction so that the distortion is changed without substantially changing the focal length. Thereby, the movement of the lens front group 5a is utilized so that the peripheral illuminance can be improved. [0038] In S701, the control unit 105 obtains the amount of change in the illuminance of the outermost peripheral portion of the illuminated surface when the lens front group 5a is moved by the predetermined distance δ in the optical axis direction by the illuminance distribution measuring unit 115. The amount of change is stored in the memory unit 105a (illuminance unevenness measurement 1). In addition, this S701 can also be performed in advance through simulation or the like. In S702, the control unit 105 calculates the amount of movement in the optical axis direction of the lens front group 5a based on the amount of change. In S703, the control unit 105 transmits the calculated movement amount by moving the lens front group 5a in the optical axis direction through the lens driving unit 51. Then, in S704, the control unit 105 obtains the amount of change in the illuminance of the outermost peripheral portion of the illuminated surface when the lens front group 5a is moved by the predetermined distance δ in the optical axis direction (the illuminance unevenness measurement 2). At S705, it is confirmed whether the fluctuation amount falls within a predetermined allowable range. When the amount of variation falls within the allowable range, the process ends. On the other hand, if the fluctuation amount does not fall within the allowable range, the process proceeds to S706, and the result of the illuminance unevenness measurement 2 is returned, and the process returns to S703, and the amount of movement of the filter 6 is calculated. In this manner, the control unit 105 returns the amount of movement of the control filter 6 so that the illuminance unevenness calculated from the illuminance distribution measured by the illuminance distribution measuring unit 115 falls within the allowable range. [0040] By performing both the movement of the filter 6 in the control sequence according to FIG. 6 described above and the driving of the lens front group in the control sequence of FIG. 7, more precise correction can be performed. At this time, the control sequence of FIG. 6 and the control sequence of FIG. 7 under the transmission control unit 105 may be executed in series in time series, or may be performed in parallel. [0041] Further, the execution result of the control sequence of FIG. 6 and the control sequence of FIG. 7 can be memorized in the memory unit 105a. When the same lighting condition is performed again, the execution result is called from the memory unit 105a to drive each element to the optimum position. Thereby, the order of the illuminance unevenness and the illuminance unevenness of the concentric circles (the illuminance unevenness of the optical axis symmetry) can be quickly corrected in the order of FIG. 6 and FIG. 7 . Further, when the illumination optical system is used for a long period of time, it is conceivable that the transmittance of any one of the lenses in the apparatus is deteriorated, and unevenness in illuminance in which the rotation is asymmetric is generated. In such a case, it is also possible to perform the correction of the illuminance unevenness and the concentric illuminance unevenness (the optical axis symmetry illuminance unevenness) by performing the control sequence of FIGS. 6 and 7 again. Further, in the Japanese Patent Laid-Open Publication No. 2001-135564, a filter is disposed in the vicinity of an incident surface of an optical integrator in which a plurality of microlenses are arranged at a predetermined distance in two dimensions. The optical filter has a light amount adjusting unit that can adjust the amount of transmitted light in a plurality of regions corresponding to a plurality of minute lenses constituting the optical integrator. With such a configuration, the filter can be moved in the XY plane to control the illuminance unevenness. [0044] However, an optical integrator in which a plurality of minute lenses are arranged in two dimensions at a predetermined distance is generally expensive, so that the rod type optical integrator according to the present embodiment is relatively low in cost. In the configuration of the present embodiment using the rod type optical integrator, the arrangement of the respective adjustment units is determined by the imaging relationship as shown in FIG. 3A. Specifically, the plurality of adjustment units are arranged in the same direction so that the directions of the images formed in the respective adjustment portions of the emission end faces of the rod-type optical integrator are transmitted in the same direction by the light transmitted through the plurality of adjustment portions. On the light. According to this, illuminance unevenness control can be performed. <Second Embodiment> Next, an illumination optical system according to a second embodiment will be described. The schematic configuration of the device is as in Figure 1. Fig. 3C is a schematic view of the optical filter 6 according to the present embodiment as seen from the incident side. The surface of the filter 6 corresponds to a plurality of secondary light source images of the optical integrator 4, and the rectangular pattern filter 6C is disposed in a plurality of first regions C, and the rectangular pattern filter 6D is disposed in plural The second area D. Further, the pattern filters 6C and 6D may be arranged in a region of at least a part of the plurality of first regions C and the plurality of second regions D, not all of them. Here, the plurality of first regions C are regions in which images of the same direction are formed on the emission end faces 4b of the optical integrator 4. Further, the plurality of second regions D are regions in which the imaging end faces 4b of the optical integrator 4 form an image having a mirror image relationship with respect to the images of the plurality of first regions C. In the present embodiment, the pattern filter 6C has an effect of increasing the illuminance of the peripheral portion of the illuminated surface in proportion to the approximate second power of the image height as shown in FIG. 8A. Further, the pattern filter 6D has an opposite characteristic, that is, it has an effect of reducing the illuminance of the peripheral portion in proportion to the approximate second power of the image height as shown in FIG. 8B. By the combination of the pattern filters 6C and 6D, the effects of the change in the overall illuminance distribution are eliminated from each other. [0047] Hereinafter, a method of correcting the illuminance unevenness in the inclined shape as shown in FIG. 9A will be described. When the incident end surface 4a of the optical integrator 4 corresponds to the illuminated surface, and the normalized XY coordinate system is adopted, the effect z of the filter 6 is simply z=ax 2 -ax when it is only one dimension in the X direction. 2 =0, does not affect the illuminance distribution. Here, a is a constant. [0048] The effect z' when the filter 6 is moved by a predetermined distance δ in the X direction is changed in the direction of the pattern filters 6C and 6D δ, so that z'=a(x+δ) 2 -a( X-δ) 2 . That is, since the first term of x depending on δ is generated, an oblique illuminance distribution can be generated. In the present embodiment, also in the same manner as the flowchart of FIG. 6, the illuminance unevenness in the oblique shape can be corrected in a flat manner as shown in FIG. 9B. As described above, when the peripheral illuminance reduction of the secondary shape is small and the illuminance unevenness of the inclined shape is dominant, the configuration of the adjustment unit of the present embodiment is effective for correcting the illuminance distribution. <Third Embodiment> Next, an illumination optical system according to a third embodiment will be described. In the present embodiment, the effects of the pattern filters 6C and 6D in the second embodiment are different. The pattern filter 6C in the present embodiment has an effect of changing as if the illuminance distribution and the image height are approximately three powers as shown in FIG. 10A. Further, the pattern filter 6D has an opposite characteristic, that is, it has an effect of changing as in the approximate third power of the image height as shown in Fig. 10B. By the combination of the pattern filters 6C and 6D, the effects of the change in the overall illuminance distribution are eliminated from each other. [0051] As in the second embodiment, the effect z of the filter 6 indicates that z = ax 3 - ax 3 = 0 when only the X direction is one dimension, and the illuminance distribution is not affected. Here, a is a constant. [0052] The effect z' when the filter 6 is moved by a predetermined distance δ in the X direction is changed in the direction of the pattern filters 6C and 6D δ, so that z'=a(x+δ) 3 -a( X-δ) 3 . In the present embodiment, since the second term of x depending on δ occurs, a concentric circular second illuminance distribution can be generated. In the present embodiment, it is also possible to perform the correction in the same manner as the flowchart of FIG. 6 so that the illuminance distribution of the secondary shape of FIG. 11A is flat as shown in FIG. 11B. In the case where the illuminance unevenness is not inclined, and the concentric circular illuminance unevenness is dominant, the configuration of the adjustment unit according to the present embodiment is effective for correcting the illuminance distribution. In addition, even if the illuminance distribution to be corrected is a high-order shape of three times or later, the illuminance unevenness correction can be performed by setting the transmittance distribution of the pattern filter as appropriate. According to each of the above embodiments, it is advantageous to provide an improvement in correction performance for illuminance unevenness. [Embodiment of the article manufacturing method] The article manufacturing method according to the embodiment of the present invention is, for example, an article suitable for manufacturing a micro device such as a semiconductor device or an element having a fine structure. The article manufacturing method according to the present embodiment includes a program for transferring a pattern of a main board on a substrate by the above-described photolithography apparatus (exposure apparatus, imprint apparatus, drawing apparatus, etc.), and processing a substrate on which the program is transferred. program. Further, such a manufacturing method includes other well-known procedures (oxidation, film formation, vapor deposition, doping, planarization, etching, resist peeling, dicing, bonding, encapsulation, etc.). The article manufacturing method of the present embodiment is advantageous for at least one of performance, quality, productivity, and production cost of the article compared to the conventional method. The present invention is not limited to the embodiments described above, and various modifications and changes can be made without departing from the spirit and scope of the invention. Accordingly, the following claims are attached to disclose the scope of the invention.
[0057][0057]
100‧‧‧曝光裝置100‧‧‧Exposure device
101‧‧‧照明光學系統101‧‧‧Lighting optical system
1‧‧‧放電燈1‧‧‧discharge lamp
2‧‧‧橢圓鏡2‧‧‧Elliptical mirror
3‧‧‧第1中繼光學系統3‧‧‧1st relay optical system
3a‧‧‧透鏡前群3a‧‧‧Last lens group
3b‧‧‧透鏡後群3b‧‧‧Lens group
4‧‧‧光學積分器4‧‧‧Optical integrator
4a‧‧‧入射端面4a‧‧‧Injected end face
4b‧‧‧射出端面4b‧‧‧ shot end face
40‧‧‧二次光源40‧‧‧Secondary light source
41a‧‧‧二次光源影像41a‧‧‧Secondary light source image
41b‧‧‧二次光源影像41b‧‧‧Secondary light source image
42a‧‧‧二次光源影像42a‧‧‧Secondary light source image
42b‧‧‧二次光源影像42b‧‧‧Secondary light source image
5‧‧‧第2中繼光學系統5‧‧‧2nd relay optical system
5a‧‧‧透鏡前群5a‧‧‧Last lens group
5b‧‧‧透鏡後群5b‧‧‧Lens group
51‧‧‧透鏡驅動部51‧‧‧ lens drive unit
6‧‧‧濾光器6‧‧‧ Filter
6A‧‧‧圖案濾鏡6A‧‧‧ pattern filter
6B‧‧‧圖案濾鏡6B‧‧‧ pattern filter
6C‧‧‧圖案濾鏡6C‧‧‧ pattern filter
6D‧‧‧圖案濾鏡6D‧‧‧ pattern filter
60‧‧‧調整部60‧‧‧Adjustment Department
61a‧‧‧調整部61a‧‧‧Adjustment Department
61b‧‧‧調整部61b‧‧‧Adjustment Department
62a‧‧‧調整部62a‧‧‧Adjustment Department
62b‧‧‧調整部62b‧‧‧Adjustment Department
7‧‧‧濾光器驅動部7‧‧‧Filter drive unit
102‧‧‧光罩台102‧‧‧mask table
103‧‧‧投影光學系統103‧‧‧Projection optical system
104‧‧‧晶圓台104‧‧‧ Wafer
105‧‧‧控制部105‧‧‧Control Department
105a‧‧‧記憶部105a‧‧‧Memory Department
114‧‧‧晶圓台驅動部114‧‧‧ Wafer Drive Department
115‧‧‧照度分布計測部115‧‧‧Illuminance Distribution Measurement Department
F1‧‧‧第1焦點F1‧‧‧1st focus
F2‧‧‧第2焦點位置F2‧‧‧2nd focus position
R‧‧‧光罩R‧‧‧Photo Mask
S1‧‧‧共軛面S1‧‧‧conjugate surface
S2‧‧‧虛像面S2‧‧‧ virtual image
W‧‧‧晶圓W‧‧‧ wafer
[0007] [圖1]就曝光裝置的構成進行繪示的圖。 [圖2]就調整部與二次光源的關係進行繪示的示意圖。 [圖3A]就調整部與光學積分器射出端面的成像關係進行繪示的圖。 [圖3B]就濾光器上的調整部的配置例進行繪示的圖。 [圖3C]就濾光器上的調整部的配置例進行繪示的圖。 [圖4]說明濾光器的作用的圖。 [圖5A]說明照度不均的校正方法的圖。 [圖5B]說明照度不均的校正方法的圖。 [圖5C]說明照度不均的校正方法的圖。 [圖6]就傾斜狀的照度不均的校正順序進行繪示的流程圖。 [圖7]就光軸對稱的照度不均的校正順序進行繪示的流程圖。 [圖8A]說明濾光器的作用的圖。 [圖8B]說明濾光器的作用的圖。 [圖9A]說明照度不均的校正方法的圖。 [圖9B]說明照度不均的校正方法的圖。 [圖10A]說明濾光器的作用的圖。 [圖10B]說明濾光器的作用的圖。 [圖11A]說明濾光器的作用的圖。 [圖11B]說明濾光器的作用的圖。[FIG. 1] A diagram showing the configuration of an exposure apparatus. FIG. 2 is a schematic view showing the relationship between the adjustment unit and the secondary light source. FIG. FIG. 3A is a view showing an imaging relationship between an adjustment portion and an exit end surface of an optical integrator. FIG. FIG. 3B is a diagram showing an arrangement example of an adjustment portion on the optical filter. FIG. FIG. 3C is a diagram showing an arrangement example of an adjustment portion on the optical filter. FIG. Fig. 4 is a view for explaining the action of the filter. FIG. 5A is a diagram illustrating a method of correcting illuminance unevenness. FIG. FIG. 5B is a diagram for explaining a method of correcting illuminance unevenness. FIG. 5C is a diagram illustrating a method of correcting illuminance unevenness. Fig. 6 is a flow chart showing a procedure for correcting the inclination unevenness of illumination. [Fig. 7] A flow chart showing the order of correction of the illuminance unevenness of the optical axis symmetry. Fig. 8A is a view for explaining the action of the filter. Fig. 8B is a view for explaining the action of the filter. FIG. 9A is a diagram for explaining a method of correcting illuminance unevenness. FIG. 9B is a diagram for explaining a method of correcting illuminance unevenness. Fig. 10A is a view for explaining the action of the filter. Fig. 10B is a view for explaining the action of the filter. Fig. 11A is a view for explaining the action of the filter. Fig. 11B is a view for explaining the action of the filter.
Claims (10)
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| JP2016168546A JP6761306B2 (en) | 2016-08-30 | 2016-08-30 | Illumination optics, lithography equipment, and article manufacturing methods |
| JP2016-168546 | 2016-08-30 |
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| TW201820045A TW201820045A (en) | 2018-06-01 |
| TWI645261B true TWI645261B (en) | 2018-12-21 |
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| JP (1) | JP6761306B2 (en) |
| KR (1) | KR102212855B1 (en) |
| CN (1) | CN109643069B (en) |
| TW (1) | TWI645261B (en) |
| WO (1) | WO2018043423A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI700960B (en) * | 2019-05-29 | 2020-08-01 | 財團法人國家實驗研究院 | Light source adjusting method, light source system and computer program product |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7148268B2 (en) * | 2018-05-01 | 2022-10-05 | キヤノン株式会社 | Control apparatus, lithographic apparatus, and method of manufacturing an article |
| JP7533445B2 (en) * | 2019-03-29 | 2024-08-14 | 株式会社ニコン | Exposure apparatus, illumination optical system, and device manufacturing method |
| JP7446096B2 (en) * | 2019-12-04 | 2024-03-08 | キヤノン株式会社 | Illumination optical system and article manufacturing method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001135564A (en) * | 1999-11-05 | 2001-05-18 | Canon Inc | Projection exposure equipment |
| US20010046039A1 (en) * | 1999-03-16 | 2001-11-29 | Nikon Corporation | Illumination apparatus, exposure apparatus and exposure method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3440458B2 (en) * | 1993-06-18 | 2003-08-25 | 株式会社ニコン | Illumination device, pattern projection method, and semiconductor element manufacturing method |
| JP4310816B2 (en) * | 1997-03-14 | 2009-08-12 | 株式会社ニコン | Illumination apparatus, projection exposure apparatus, device manufacturing method, and projection exposure apparatus adjustment method |
| JP3259657B2 (en) * | 1997-04-30 | 2002-02-25 | キヤノン株式会社 | Projection exposure apparatus and device manufacturing method using the same |
| AU1891299A (en) * | 1998-01-19 | 1999-08-02 | Nikon Corporation | Illuminating device and exposure apparatus |
| JP2000269114A (en) | 1999-03-16 | 2000-09-29 | Nikon Corp | Illumination device, exposure device and exposure method |
| WO2000057459A1 (en) * | 1999-03-24 | 2000-09-28 | Nikon Corporation | Exposure method and apparatus |
| JP2001135560A (en) * | 1999-11-04 | 2001-05-18 | Nikon Corp | Illumination optical apparatus, exposure apparatus having the illumination optical apparatus, and method for manufacturing microdevice using the exposure apparatus |
| TW594847B (en) * | 2001-07-27 | 2004-06-21 | Canon Kk | Illumination system, projection exposure apparatus and method for manufacturing a device provided with a pattern to be exposed |
| TW200625027A (en) * | 2005-01-14 | 2006-07-16 | Zeiss Carl Smt Ag | Illumination system for a microlithographic projection exposure apparatus |
| JP2010097975A (en) * | 2008-10-14 | 2010-04-30 | Nikon Corp | Correction unit, illumination optical system, exposure apparatus, and device manufacturing method |
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2016
- 2016-08-30 JP JP2016168546A patent/JP6761306B2/en active Active
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2017
- 2017-08-28 KR KR1020197008164A patent/KR102212855B1/en active Active
- 2017-08-28 CN CN201780051936.9A patent/CN109643069B/en active Active
- 2017-08-28 WO PCT/JP2017/030779 patent/WO2018043423A1/en not_active Ceased
- 2017-08-28 TW TW106129100A patent/TWI645261B/en active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010046039A1 (en) * | 1999-03-16 | 2001-11-29 | Nikon Corporation | Illumination apparatus, exposure apparatus and exposure method |
| JP2001135564A (en) * | 1999-11-05 | 2001-05-18 | Canon Inc | Projection exposure equipment |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI700960B (en) * | 2019-05-29 | 2020-08-01 | 財團法人國家實驗研究院 | Light source adjusting method, light source system and computer program product |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2018043423A1 (en) | 2018-03-08 |
| CN109643069A (en) | 2019-04-16 |
| KR102212855B1 (en) | 2021-02-05 |
| JP2018036425A (en) | 2018-03-08 |
| CN109643069B (en) | 2021-07-27 |
| KR20190040294A (en) | 2019-04-17 |
| TW201820045A (en) | 2018-06-01 |
| JP6761306B2 (en) | 2020-09-23 |
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