TWI644482B - Parallel power module, power device and power system - Google Patents

Abstract

A parallel power module includes a transistor unit, a substrate, two input bus bars, and an output bus bar. The transistor unit comprises two rows of transistors spaced apart from each other, each row of transistors having a plurality of transistors arranged spaced apart from each other in a first direction, the rows of the two transistors being spaced apart from each other, wherein each transistor The transistors of the row are connected in parallel with each other. The substrate power supply crystal unit is disposed, and the substrate includes two sides, and the length of each side increases or decreases according to the number of the transistors of each transistor row. Each of the input bus bars extends in the first direction and has a length corresponding to the number of the transistors of the respective transistor rows. The output bus bar extends in the first direction and has a length corresponding to the number of the transistors of each of the transistor rows.

Description

Parallel power module, power device and power system

The invention relates to a power module, in particular to a parallel power module, a power device and a power system.

Insulated Gate Bipolar Transistor (IGBT) can be applied to the motor driver of electric vehicles, inverter air conditioner, inverter refrigerator, and even the sound source driving component of high-power output audio amplifier, which is characterized by high output power. Quickly switch actions. For example, the motor driver of an electric vehicle operates by inputting a high-voltage power source from a DC terminal and converting it into a three-phase power output through an IGBT module, thereby providing a motor power source. However, when it is desired to increase the power that can be output, it will be limited by the maximum current value that can be output by a single IGBT module of an existing specification, which cannot meet the market demand, and the existing IGBT module is modularized by the package. The complicated production process leads to an increase in production cost, and because it is a three-phase bridge type combination, it directly outputs three-phase alternating current. When one of the phases is partially damaged, it cannot be directly repaired or replaced, and the entire module must be replaced and repaired. Low sex. Therefore, there are still many areas for improvement of existing IGBT modules.

Therefore, one of the objects of the present invention is to provide a parallel power module which has expandability and can reduce production cost, effectively achieve low thermal impedance, and avoid uneven distribution of heat sources.

Another object of the present invention is to provide a power device having the parallel power module, which has high structural strength stability and increases product reliability.

Still another object of the present invention is to provide a power system having the parallel power module, which is simpler in assembly and maintenance, and can reduce the associated cost of replacing parts.

The parallel power module of the present invention comprises a transistor unit comprising two rows of transistors spaced apart from each other, each row of transistors having a plurality of transistors arranged in a first direction spaced apart from each other, the two transistors The rows are arranged along a second direction perpendicular to the first direction, wherein each of the transistors of each transistor row is connected in parallel with each other; a substrate is provided for the transistor unit, and the substrate includes a guiding surface, And two sides on opposite sides and extending along the first direction, the transistors are electrically connected to the guiding surface, and the length of each side increases corresponding to the number of the transistors of each of the transistor rows Subtracting two input bus bars electrically connected to the guiding surface of the substrate, each of the input bus bars being located between the corresponding row of the transistors and the corresponding side, each of the input bus bars along the first direction Extending and increasing in length corresponding to the number of the transistors of each of the transistor rows; and an output bus bar electrically connected to the guiding surface of the substrate and located between the rows of transistors, the output bus bar Extending along the first direction and The number of transistors corresponding to each row of these transistors is increased or decreased.

In some implementations, each input bus bar has a first extension extending in the first direction and parallel to the corresponding row of the transistors, extending in a third direction and connecting the first extension a second extension of one end, and a third extension extending to one end of the second extension and extending in the first direction, the third direction being perpendicular to the first direction and the second direction, respectively, the first extension The segment and the third extension are located on the same side of the second extension.

In some implementations, the output bus bar has a first extension extending in the first direction and parallel to the corresponding row of the transistors, and extending in a third direction and connecting the end of the first extension a second extension, and a third extension connected to one end of the second extension and extending in the first direction, the third direction being perpendicular to the first direction and the second direction, respectively, the first extension And the third extension is located on the same side of the second extension.

In some implementations, the first extension and the third extension of each input bus bar are parallel to each other, and the second extension is perpendicular to the first extension and the third extension, respectively.

In some implementations, the first extension and the third extension of the output bus bar are parallel to each other, and the second extension is perpendicular to the first extension and the third extension, respectively.

In some implementations, the second extension of each input bus bar has two guide fillets that connect the first extension and the third extension, respectively.

In some implementations, the second extension of the output bus bar has two guide fillets that connect the first extension and the third extension, respectively.

In some embodiments, each of the two adjacent transistors of each of the rows of transistors has a pitch in the first direction of between 3 mm and 4 mm.

In some embodiments, the spacing of the transistors in the second direction is between 27 mm and 33 mm.

The power device of the present invention comprises a heat dissipating unit; a parallel power module is disposed on the heat dissipating unit; a bracket is disposed on the heat dissipating unit and covers the parallel power module; a continuous power source is disposed on the bracket and electrically connected The two input bus bars of the parallel power module; and a driving unit disposed on the bracket and electrically connected to the substrate of the parallel power module for driving the parallel power module to operate.

The power system of the present invention comprises three power devices and a total power output unit, which are respectively electrically connected to the output bus bars of the parallel power modules of the power devices for outputting three-phase currents of the power devices.

The invention has at least the following effects:

(1) Parallel power module can freely configure the number of transistors in each transistor row of the transistor unit, and then design the corresponding substrate, input bus bar and output bus bar size, through optimized design Achieve maximum power density and expandability.

(2) Parallel power modules only need three sets of copper bars (two input bus bars, one set of AC copper bars), which can effectively transmit large current, compared with the wire bonding of the market module, welding copper wire, spring Designs such as contacts... are simple in process, highly reliable and reduce structural costs.

(3) The structure of the power device is tight, and the assembled configuration of the heat dissipating unit, the bracket and the driving unit enables the parallel power module to effectively exert power, and the arrangement of the heat dissipating unit and the copper foil of the substrate of the parallel power module, The input bus bar and the output bus bar are set to have good heat dissipation effect, and the system structural strength is stable and high, which increases product reliability.

(4) The power system is a half-bridge combination. A total of three power devices are required to be connected in parallel to form a U/V/W three-phase output. Compared with the conventional IGBT module, it is impossible to replace and repair the single phase. The design can be freely replaced with any set of electrical devices, making assembly and maintenance easier and reducing the cost associated with replacing parts.

Referring to FIG. 1 and FIG. 2, an embodiment of the power device of the present invention includes a heat dissipating unit 1, a parallel power module 10, a bracket 2, a DC power source 3, and a driving unit 4. The power device of the present invention is suitable for converting a direct current provided by the direct current power source 3 into one phase of a three-phase alternating current, and the three phases are respectively U/V/W. Therefore, for example, when applied to an electric vehicle, three power devices are required, and a total power output unit (not shown) is electrically connected to the power devices to form a power system for outputting the power devices. The phase current is to the motor of the electric vehicle (not shown), that is, each power device is responsible for outputting one phase of the alternating current. The total power output unit (not shown) uses a copper bar in this embodiment for transmitting current.

Referring to FIG. 3 to FIG. 5 , the heat dissipation unit 1 includes a base 11 extending along a first direction D1 , a heat dissipation member 12 disposed on the base 11 , and a waterproof ring 13 . The base 11 has a heat dissipating surface 111, an inlet and outlet surface 112 connected to the heat dissipating surface 111, four lugs 113 respectively formed on the two side edges, and two openings extending in the inlet and outlet surface 112 and extending along the first direction D1. a through hole 114, a recess formed in the heat sink surface 111 as a U-shaped water tank 115, a recess 116 formed on the heat dissipating surface 111 and corresponding in shape to the heat dissipating member 12, and a heat sink surface 111 formed around the heat dissipating surface 111 A groove 117 of the water tank 115. The through holes 114 respectively communicate with the water tank 115, and the water tank 115 communicates with the groove 116. The heat dissipating member 12 can be a copper plate or an aluminum plate or the like having good thermal conductivity. In this embodiment, an aluminum plate is formed, which is formed with a plurality of fins 121 extending in a second direction (see FIG. 6), and the heat dissipating member 12 covers the The water tank 115 is received in the recess 116. The fins 121 are correspondingly received in the water tank 115. The heat sink 12 and the recess 116 are matched in shape and are locked by a plurality of screws. The waterproof ring 13 is generally made of a rubber O-ring, and is embedded in the groove 117 to abut against the heat sink 12 to achieve waterproof and close contact. When the heat dissipating unit 1 is in use, the cooling water flows into the water tank 115 from one of the perforations 114, and after the heat dissipating member 12 is contacted, the heat is taken away and discharged by the other perforation 114 to achieve the heat dissipating effect, and the waterproof ring 13 can be disposed. It effectively prevents water from leaking from the gap between the base 11 and the heat sink 12 during use.

Referring to FIGS. 7-9, the parallel power module 10 includes a transistor unit 6, a substrate 5, two input bus bars 7, and an output bus bar 8. The transistor unit 6 comprises two rows of transistors 61 spaced apart from each other, each row of cells 61 having six transistors 611 arranged spaced apart from one another in a first direction D1, the two rows of transistors 61 being along a vertical The second direction D2 of the first direction D1 is spaced apart, wherein each of the transistors 611 of each transistor row 61 is connected in parallel with each other. The two transistor rows 61 are alternately used with each other, and when one of the transistor rows 61 is actuated, the other transistor row 61 is stopped. In the present embodiment, the transistor 611 is an IGBT (Insulated Gate Bipolar Transistor), but not limited thereto, and the number of the transistor 611 can be increased or decreased according to the user's demand. If the output power of the power module is to be improved, The number of transistors 611 of each of the transistor rows 61 can be increased. The spacing a2 between the two rows of transistors 61 is preferably controlled between 27 mm and 33 mm. In the present embodiment, the spacing a2 is preferably set to 29.8 mm, and the transistors of each of the rows of transistors 61 are selected. The spacing a1 between 611 is preferably controlled between 3mm and 4mm, because the size of the spacing a1 will affect the heat dissipation effect of the transistor 611. If the spacing a1 is too small, the heat dissipation effect is not good, and if the spacing a1 is too large, the transistor row is too large. The space occupied by 61 will increase, increasing the volume of the entire parallel power module 10, which will increase the manufacturing cost. In the present embodiment, it is preferable that the pitch a1 is set to 3.4 mm.

The substrate 5 is disposed on the base unit 11 of the heat dissipating unit 1, and includes a plate body 51, a first copper foil layer 52 disposed on the plate body 51, and a cover layer disposed on the substrate The thermally conductive insulating layer 53 of the first copper foil layer 52 and the second copper foil layer 54 disposed on the thermally conductive insulating layer 53. The plate body 51 has a first surface 511, two side edges 512 on opposite sides and extending along the first direction D1, and a second surface 513 on the opposite side of the first surface 511. The length of each of the side edges 512 corresponds to the number of the transistors 611 of the respective transistor rows 61. The first copper foil layer 52 is disposed on the first surface 511 of the plate body 51. The first copper foil layer 52 and the heat conductive insulating layer 53 have substantially the same area as the plate body 51, and the second copper foil layer 54 has a rectangular shape. Its area is smaller than the area of the plate body 51. By providing the first copper foil layer 52 between the plate body 51 and the thermally conductive insulating layer 53, the heat dissipation effect of the substrate 5 can be effectively improved. The thermal conductive insulating layer 53 is coated on the first copper foil layer 52, and its main function is to provide power protection, prevent short circuit of the parallel power module 10, and transfer heat to the board 51. The second copper foil layers 54 are spaced apart from each other in the second direction D2 and disposed on the thermally conductive insulating layer 53. Each of the second copper foil layers 54 has a guiding surface 541. The second copper foil layer 54 can help the crystal unit 6 to dissipate heat. The length of the second copper foil layer 54 is increased or decreased according to the number of the transistors 611 of the transistor row 61, and the appropriate contact area of the transistor unit 6 can be given. A conductive path is provided, and a circuit layout is disposed on the second copper foil layer 54 between the two transistor rows 61. Each of the transistor rows 61 is electrically connected to the guiding faces 541 of the corresponding two second copper foil layers 54.

The two input bus bars 7 are electrically connected to the guiding surface 541 of the second copper foil layer 54 of the substrate 5. Each of the input bus bars 7 is located between the corresponding transistor row 61 and the corresponding side 512. The input bus bar 7 extends in the first direction D1 and its length increases or decreases corresponding to the number of the transistors 611 of each of the transistor rows 61. Each of the input bus bars 7 has a first extension 71 extending in the first direction D1 and parallel to the corresponding transistor row 61, and extending in a third direction D3 and connecting the first extension 71 a second extension portion 72 at one end, a third extension portion 73 connecting one end of the second extension portion 72 and extending in the first direction D1, and a first extension portion 71 and a third extension portion 73 disposed between the first extension portion 71 and the third extension portion 73 Nut 74. The third direction D3 is perpendicular to the first direction D1 and the second direction D2, respectively, and the first extension 71 and the third extension 73 are located on the same side of the second extension 72. The first extension 71 and the third extension 73 are parallel to each other, and the second extension 72 is perpendicular to the first extension 71 and the third extension 73, respectively. The second extending portion 72 has two rounded corners 721 respectively connecting the first extending portion 71 and the third extending portion 73, which can prevent the copper strip from accumulating due to the folding angle and reduce the stray inductance of the current loop. . The nut 74 is for providing a screw to be locked and fixed between the first extension 71 and the third extension 73. Among them, the input bus bar 7 adopts a design with two bends of 90 degrees, which can effectively utilize the configured space.

The output bus bar 8 is electrically connected to the guiding surface 541 of the second copper foil layer 54 of the substrate 5 and located between the rows of the transistors 6. The output bus bar 8 is spaced apart from the input bus bars 7. The output bus bar 8 extends in the first direction D1 and its length increases or decreases corresponding to the number of the transistors 611 of the respective transistor rows 61. The output bus bar 8 has a first extension 81 extending in the first direction D1 and parallel to the corresponding transistor row 61, a first extension extending in the third direction D3 and connecting the end of the first extension 81 a second extension 82, a third extension 83 connected to one end of the second extension 82 and extending in the first direction D1, an output section 84 and a first extension 81 and a third extension 83 Nut 85. The first extension segment 81 and the third extension segment 83 are located on the same side of the second extension segment 82. The second extension segment 82 has two guide circles respectively connecting the first extension segment 82 and the third extension segment 83. The corner portion 821 can prevent the copper strip from accumulating due to the folding angle, and can reduce the stray inductance of the current loop. The output section 84 is attached to the third extension 83 by a screw lock. The nut 85 is for providing a screw to be locked and fixed between the first extension 81 and the third extension 83. Among them, the output bus bar 8 and the input bus bar 7 are designed to be bent at 90 degrees in two stages, and the configured space can be effectively utilized.

Referring to FIG. 1 , FIG. 2 and FIG. 7 , the bracket 2 has a substantially rectangular shape as a whole, and includes a first side 21 , a second side 22 parallel to the first side 21 , and two of the first side 21 and the second side 22 . The side edge 23, a carrying portion 24 and two support plate portions 25. The bearing portion 24 is a rectangular block recessed near the first side 21 for the DC power source 3, and the DC power source 3 is a film capacitor. The film capacitor has high polarity, high insulation resistance, and excellent frequency characteristics (wide frequency response). ), and the advantage of less dielectric loss, so the film capacitor is generally used as the DC power supply 3. The two sides 22 and the carrying portion 24 are respectively connected to the two ends of each supporting plate portion 25, and the two supporting plate portions 25 are provided for the driving unit 4. The second side 22 is formed with three protrusions 221, and the three protrusions 221 are attached to the heat dissipating member 12 of the heat dissipating unit 1 by screws. The two side edges 23 further form two heat dissipating units 1 respectively. The bumps 231 of the pedestal 11 of the pedestal 11 are fixed by the screws, so that the bracket 2 can be stably disposed on the heat dissipating unit 1.

The bracket 2 also has an input hollowing area 26 corresponding to the two input bus bars 7 of the parallel power module 10 and an output hollowing area 27 corresponding to the output bus bar 8 of the parallel power module 10 at two positions. The two input cutouts 26 are respectively provided for providing two input bus bars 7 and two DC bus bars 31 of the DC power supply 3, and the DC bus bars 31 are substantially "S" type, and are matched with the recessed load. The portion 24 has a high and low drop for electrically connecting the DC power source 3 to the parallel power module 10. The output cutout 27 is a space for providing the third extension 83 and the output section 84 of the output bus bar 8 to be locked. In addition, the bracket 2 is attached to the two input bus bars 7 and the output bus bar 8 of the parallel power module 10 through the screw lock, and the two support plate portions 25 of the bracket 2 are attached to the heat dissipation unit 1 . An elastic support member 9 is disposed between each of the two rows of transistors 61 of the transistor unit 6, that is, each of the transistors 611, which may be a spring, an elastic block or the like, and the elastic support members 9 respectively abut each other. The support plate portion 25 and the transistor 611, together with the bracket 2, can make the respective transistors 611 more stably disposed on the substrate 5, thereby preventing the parallel power module 10 from being affected by external force impact or vibration.

The driving unit 4 is used to provide a signal required to drive the transistor unit 6, that is, an actuating switch of the transistor unit 6. The drive unit 4 includes two drive circuit boards 41, six converters 42, and eight connectors 43. The two driving circuit boards 41 are respectively disposed on the supporting board portions 25 of the bracket 2, and each of the driving circuit boards 41 is provided with three converters 42 and four connectors 43 respectively, and the two ends of the connector 43 and the driving circuit board respectively 41 and the second copper foil layer 54 of the substrate 5 of the parallel power module 10 are connected to transmit signals to the transistor unit 6. The number of the converters 42 and the connectors 43 is not limited to six or eight. In other embodiments, the number of the transistors 611 may be increased or decreased.

Referring to FIG. 1 , FIG. 2 and FIG. 7 , the following is an introduction to the assembly and use of the power system of the present invention: first, the parallel power module 10 is locked on the heat sink 12 of the heat dissipation unit 1 , and the bracket 2 is locked to The susceptor 11 of the heat dissipation unit 1 and the input bus bar 7 and the output bus bar 8 of the parallel power module 10 are fixedly disposed on the carrier portion 24 of the bracket 2, and the DC bus bars 31 are screwed. They are respectively locked to the input bus bars 7 to electrically connect the DC power source 3 to the parallel power module 10, and then the driving unit 4 is disposed on the support plate portion 25 of the bracket 2, so that the connector 43 of the driving unit 4 is connected in parallel. The second copper foil layer 54 of the substrate 5 of the power module 10 is butted to complete assembly of an electric device. Referring to FIG. 10 and FIG. 11 , finally, three power devices are respectively assembled and fixed by the bumps 231 of the respective power devices and the joint posts 30 of the lugs 113 by eight positions, and then a water channel shunt assembly 20 and each The two through holes 114 of the base 11 of the heat dissipation unit 1 of the power module are joined. The waterway shunt assembly 20 includes a front plate 201 and a rear plate 202. The front plate 201 and the rear plate 202 are fixed by a plurality of screws. The front plate 201 has a total water inlet 201a and a partition from the total water inlet 201a. The total water outlet 201b, the rear plate 202 is fixed to the inlet and outlet surface 112 of the base 11 of the heat dissipating unit 1 of each power device by a plurality of screws, and forms a moisture inlet groove 202a and a moisture flow groove 202b. The inlet moisture flow groove 202a is substantially E-shaped, which respectively communicates and joins one of the two perforations 114 of the three sets of power devices and the total water inlet 201a of the front plate 201, and the moisture flow groove 202b is substantially E-shaped, respectively The other of the two perforations 114 of the three sets of power devices and the total water outlet 201b of the front panel 201 are connected and joined. In use, the cooling water is injected from the total water inlet 201a, and the water flow flows through the heat dissipation unit 1 of the three power devices and is finally discharged from the total water outlet 201b, so that the heat dissipation unit 1 of each power device can exert the heat dissipation effect. Then, three power devices are connected by a total power output unit (not shown) to output three-phase current to the motor (not shown). The total power output unit is specifically a bus bar structure having three branches, which is roughly in the shape of an "E", which is electrically connected to the output section 84 of the output bus bar 8 of the parallel power module 10 of the power devices, respectively. One of the alternating currents outputted by each power device is integrated into a three-phase alternating current for external output, and the aspect of the total power output unit is not limited thereto, and may be a cable in other embodiments. The current flow of the power device itself is substantially from the DC power source 3 to the substrate 5 via the DC bus bar 31 and the input bus bar 7, and is converted into one phase of the AC current via the transistor unit 6, and finally output via the output bus bar 8.

In summary, the power system, the power device and the parallel power module of the present invention have the following effects:

(1) Parallel power module can freely configure the number of transistors in each transistor row of the transistor unit, and then design the corresponding substrate, input bus bar and output bus bar size, through optimized design Achieve maximum power density and expandability.

(2) Parallel power modules only need three sets of copper bars (two input bus bars, one set of AC copper bars), which can effectively transmit large current, compared with the wire bonding of the market module, welding copper wire, spring Designs such as contacts... are simple in process, highly reliable and reduce structural costs.

(3) The structure of the power device is tight, and the assembled configuration of the heat dissipating unit, the bracket and the driving unit enables the parallel power module to effectively exert power, and the arrangement of the heat dissipating unit and the copper foil of the substrate of the parallel power module, The input bus bar and the output bus bar are set to have good heat dissipation effect, and the system structural strength is stable and high, which increases product reliability.

(4) The power system is a half-bridge combination. A total of three power devices are required to be connected in parallel to form a U/V/W three-phase output. Compared with the conventional IGBT module, it is impossible to replace and repair the single phase. The design can replace any group of power devices arbitrarily, and the assembly and maintenance are simpler, and the related costs of replacing parts are reduced, so that the object of the present invention can be achieved.

However, the above is only the embodiment of the present invention, and the scope of the invention is not limited thereto, and all the equivalent equivalent changes and modifications according to the scope of the patent application and the patent specification of the present invention are still The scope of the invention is covered.

10‧‧‧Parallel Power Module

1‧‧‧heating unit

11‧‧‧Base

111‧‧‧heating surface

112‧‧‧In and out

113‧‧‧ lugs

114‧‧‧Perforation

115‧‧‧Sink

116‧‧‧ Groove

117‧‧‧ trench

12‧‧‧ Heat sink

121‧‧‧Fins

13‧‧‧Waterproof ring

2‧‧‧ bracket

21‧‧‧ first side

22‧‧‧ second side

221‧‧‧Bumps

23‧‧‧ Side

231‧‧‧Sideside bumps

24‧‧‧Loading Department

25‧‧‧Support plate

26‧‧‧Enter the hollowing area

27‧‧‧Output cutout

3‧‧‧DC power supply

31‧‧‧DC bus bar

4‧‧‧ drive unit

41‧‧‧Drive Circuit Board

42‧‧‧ converter

43‧‧‧Connector

5‧‧‧Substrate

51‧‧‧ board

511‧‧‧ first side

512‧‧‧ side

513‧‧‧ second side

52‧‧‧First copper foil layer

53‧‧‧thermal insulation layer

54‧‧‧Second copper foil layer

541‧‧‧Contact surface

6‧‧‧Optocell unit

61‧‧‧Optical row

611‧‧‧Optoelectronics

7‧‧‧Input bus bar

71‧‧‧First extension

72‧‧‧Second extension

721‧‧‧ Guided fillet

73‧‧‧ third extension

74‧‧‧ nuts

8‧‧‧Output bus bar

81‧‧‧First extension

82‧‧‧Second extension

821‧‧‧ Guided fillet

83‧‧‧ third extension

84‧‧‧Output segment

85‧‧‧ nuts

9‧‧‧elastic support

20‧‧‧Waterway diversion assembly

201‧‧‧ front board

201a‧‧‧ total water inlet

201b‧‧‧ total outlet

202‧‧‧Back board

202a‧‧‧Into the water flow trough

202b‧‧‧Water flow trough

30‧‧‧ Engagement column

D1‧‧‧ first direction

D2‧‧‧ second direction

D3‧‧‧ third direction

A1, a2‧‧‧ spacing

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a perspective view of an embodiment of a power device according to the present invention; FIG. 2 is an exploded perspective view of the embodiment of the present invention; 3 is a perspective view of a heat dissipating unit of the embodiment; FIG. 4 is an exploded perspective view of the heat dissipating unit of the embodiment; FIG. 5 is a top view of a base of the heat dissipating unit of the embodiment; 6 is a perspective view of a heat sink of the heat dissipating unit of the embodiment; FIG. 7 is a perspective view of a parallel power module of the embodiment; FIG. 8 is a partial plan view of the parallel power module of the embodiment. An output section of an output bus bar is omitted; FIG. 9 is a front perspective enlarged view taken from A of FIG. 8; FIG. 10 is a perspective view of an embodiment of the power system of the present invention; A partial front view of an embodiment in which a front panel of a waterway splitter assembly is omitted.

Claims (11)

A parallel power module comprising: a transistor unit comprising two rows of transistors spaced apart from each other, each row of transistors having a plurality of transistors spaced apart from each other in a first direction, the two electrodes The crystal rows are arranged along a second direction perpendicular to the first direction, wherein each of the transistors of each transistor row is connected in parallel with each other; a substrate is provided for the transistor unit, and the substrate includes a guiding surface And two sides on opposite sides and extending along the first direction, the transistors are electrically connected to the guiding surface, and the length of each side corresponds to the number of the transistors of each of the transistor rows Adding or subtracting; two input bus bars electrically connected to the guiding surface of the substrate, each of the input bus bars being located between the corresponding row of the transistors and the corresponding side, each of the input bus bars along the first a direction extending and having a length corresponding to the number of the transistors of each of the transistor rows; and an output bus bar electrically connected to the guiding surface of the substrate and located between the rows of transistors, the output confluence The strip extends along the first direction And the length thereof corresponds to the increase or decrease of the number of the transistors of each of the transistor rows. The parallel power module of claim 1, wherein each input bus bar has a first extension extending in the first direction and parallel to the corresponding row of the transistors, and a third direction a second extension extending and connecting one end of the first extension, and a third extension extending at one end of the second extension and extending in the first direction, the third direction being perpendicular to the first direction and the third direction In the second direction, the first extension and the third extension are located on the same side of the second extension. The parallel power module of claim 1, wherein the output bus bar has a first extension extending in the first direction and parallel to the corresponding row of the transistors, and extending in a third direction And a second extension connected to one end of the first extension, and a third extension connected to one end of the second extension and extending in the first direction, the third direction being perpendicular to the first direction and the third In the two directions, the first extension and the third extension are located on the same side of the second extension. The parallel power module of claim 2, wherein the first extension and the third extension of each input bus bar are parallel to each other, the second extension and the first extension and the The third extension is vertical. The parallel power module of claim 3, wherein the first extension and the third extension of the output bus bar are parallel to each other, the second extension and the first extension and the first The three extensions are vertical. The parallel power module of claim 4, wherein the second extension of each input bus bar has two lead-shaped portions that respectively connect the first extension and the third extension. The parallel power module of claim 5, wherein the second extension of the output bus bar has two lead-shaped portions that respectively connect the first extension and the third extension. The parallel power module of claim 1, wherein each of the two adjacent transistors of the transistor row has a spacing along the first direction of between 3 mm and 4 mm. The parallel power module of claim 1, wherein the distance between the transistors in the second direction is between 27 mm and 33 mm. A power device comprising: a heat dissipating unit; a parallel power module according to claims 1 to 9 disposed in the heat dissipating unit; a bracket disposed in the heat dissipating unit and covering the parallel power module; a power supply, the two input bus bars disposed on the bracket and electrically connected to the parallel power module; and a driving unit disposed on the bracket and electrically connected to the substrate of the parallel power module for driving the parallel Power module actuation. A power system comprising: three power devices as claimed in claim 10; and a total power output unit electrically connected to the output bus bars of the parallel power modules of the power devices for outputting the power systems Three-phase current of the power unit.