TWI539868B - Plasma processing device - Google Patents

Description

Plasma processing device

The present invention relates to a plasma processing apparatus for performing plasma treatment on a substrate.

For example, in the manufacturing process of a flat right angle display (FPD) typified by a liquid crystal display (LCD), various rectangular plasma treatments such as dry etching, ashing, and CVD (Chemical Vapor Deposition) are performed on the rectangular glass substrate of the object to be processed. . Further, plasma treatment is also used for film formation of an amorphous tantalum film or a microcrystalline tantalum film used for a solar cell panel.

In the plasma processing apparatus which performs such a plasma treatment, the lower electrode which mounts a to-be-processed board|substrate and the plate-electrode which opposes one pair of the upper- A high-frequency electric field is formed between these frequencies, and a capacitively coupled plasma excited by the high-frequency electric field is used (for example, Patent Document 1).

[Advanced technical literature] [Patent Literature]

[Patent Document 1] JP-A-8-325759

However, recently, a substrate to be processed such as a glass substrate for FPD tends to be enlarged, and a plate electrode to which high-frequency power is applied is also increased in size. Once so flat When the plate electrode is increased in size, a standing wave is generated on the plate electrode of the power transmission path when high-frequency power is applied. Once such a standing wave is generated, the potential or current distribution on the electrode will be uneven, and the plasma excited by the applied high-frequency power will also be uneven, making it difficult to perform uniform plasma on a large substrate to be processed. deal with.

SUMMARY OF THE INVENTION The present invention is directed to a plasma processing apparatus that can perform uniform plasma processing on a substrate to be processed.

In order to solve the above problems, the present invention provides a plasma processing apparatus including: a processing container that houses a substrate to be processed; and a substrate supporting member that supports the substrate to be processed in the processing container and has a first electrode The second electrode is configured to face the substrate supporting member and to apply high-frequency power; the gas introducing mechanism to introduce the processing gas into the processing container; and the exhaust mechanism to perform the foregoing processing In the inside of the container, by applying high-frequency electric power to the second electrode, a high-frequency electric field is formed in the first electrode and the second electrode, and the processing gas introduced from the gas introduction mechanism is plasma-formed and processed. The substrate is subjected to a plasma treatment, characterized in that the second electrode has two electrode members in a comb shape, and each of the above The electrode member has a power supply unit that supplies high-frequency power on one side of the plurality of comb teeth, and the other side has a terminal end, and the plurality of comb teeth are arranged in parallel at equal intervals, and the electrode members are arranged as one electrode member. The comb teeth are alternately and equally spaced from the comb teeth of the other electrode member, and the two electrode members are disposed such that the power supply portion is located on the same side, the terminal is located on the same side, and the terminal end of the comb tooth of one of the electrode members is set as the ground terminal. The end of the comb teeth of the other electrode member is an open terminal, and the line length of the electrode member is L, and the wavelength of the standing wave generated on the electrode is λ, L = (λ / 4) The high frequency power of a frequency of ×n (n is an integer) is applied to the above two electrode members.

A plasma processing apparatus includes: a processing container that houses a substrate to be processed; and a substrate supporting member that supports the substrate to be processed in the processing container, and has a function as a first electrode; and a second electrode a high-frequency power is applied to face the substrate supporting member; a gas introduction mechanism for introducing a processing gas into the processing container; and an exhaust mechanism for exhausting the inside of the processing container by the The high-frequency electric power is applied to the two electrodes, and a high-frequency electric field is formed between the first electrode and the second electrode, and the processing gas introduced from the gas introduction mechanism is plasma-formed, and the substrate to be processed is subjected to plasma treatment. The second electrode system has two electrode members in a comb shape, and each of the above The electrode member has a power supply unit that supplies high-frequency power on one side of the plurality of comb teeth, and the other side has a terminal end, and the plurality of comb teeth are arranged in parallel at equal intervals, and the electrode members are arranged as one electrode member. The comb teeth are alternately and evenly spaced from the comb teeth of the other electrode member, and the two electrode members are disposed such that the power supply portions are formed on the outer side and are opposite to each other, and the ends of the comb teeth of one of the electrode members are grounded terminals. The comb tooth of the other electrode member is an open end, and the line length of the electrode member is set to L, and when the wavelength of the standing wave generated on the electrode is λ, L = (λ/2) × n (n is The high frequency power of the frequency of the integer is applied to the above two electrode members.

A plasma processing apparatus includes: a processing container that houses a substrate to be processed; and a substrate supporting member that supports the substrate to be processed in the processing container, and has a function as a first electrode; and a second electrode a high-frequency power is applied to face the substrate supporting member; a gas introduction mechanism for introducing a processing gas into the processing container; and an exhaust mechanism for exhausting the inside of the processing container by the The high-frequency electric power is applied to the two electrodes, and a high-frequency electric field is formed between the first electrode and the second electrode, and the processing gas introduced from the gas introduction mechanism is plasma-formed, and the substrate to be processed is subjected to plasma treatment. The second electrode system has two electrode members in a comb shape, and each of the above The electrode member has a power supply unit that supplies high-frequency power on one side of the plurality of comb teeth, and the other side has a terminal end, and the plurality of comb teeth are arranged in parallel at equal intervals, and the electrode members are arranged as one electrode member. The comb teeth are alternately and evenly spaced from the comb teeth of the other electrode member, and the two electrode members are disposed so as to face each other with the power supply portion being formed, and have impedance adjustment portions at the ends of the comb teeth of the two electrode members. The standing wave of each of the electrode members is controlled by the impedance adjusting unit.

According to the invention, the second electrode to which the high-frequency power for forming the plasma is applied is constituted by a plurality of electrode members arranged to be able to constitute one electrode plane, and the plurality of electrode members are applied at a high level. In the case of the frequency power, the standing wave is formed, and the voltage distribution formed on the electrode plane in accordance with the sum of the standing waves can be uniformly formed. Therefore, when the high frequency power is supplied to the second electrode, the standing wave formed in each electrode member is formed. A uniform voltage distribution can be obtained on average, and a uniform plasma can be formed. Therefore, a uniform plasma treatment can be performed on the substrate to be processed.

Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.

Here, electric power such as plasma CVD is performed on a large substrate such as a glass substrate for FPD represented by a liquid crystal display, an electroluminescence (EL) display, a plasma display panel (PDP), or a solar cell. Plasma treatment device for slurry treatment.

<First embodiment>

First, a first embodiment of the present invention will be described.

1 is a cross-sectional view showing a plasma processing apparatus according to a first embodiment of the present invention, FIG. 2 is a plan view showing an upper electrode thereof, and FIG. 3 is an enlarged view showing an upper electrode thereof and a shower head as an upper ground function. Partial section view of a part.

This plasma processing apparatus 1 is a one-piece plasma processing apparatus, and has, for example, a chamber (processing container) 2 made of aluminum whose surface is subjected to an alumite treatment (anodizing treatment), which forms a square tube shape. A substrate mounting table (substrate supporting member) 3 for mounting (supporting) a large-sized substrate G having a rectangular shape is provided at the bottom of the chamber 2.

The substrate stage 3 is made of a metal such as aluminum, and is supported by the bottom of the chamber 2 via the insulating member 4. The substrate stage 3 has a function as a lower electrode (first electrode) and is grounded. Further, a heater may be buried in the substrate mounting table 3 via an insulator. In addition, a lift pin (not shown) that can be used for loading and unloading the substrate G can be inserted and lowered in a wide range so as to be able to penetrate the bottom wall of the chamber 2, the insulating member 4, and the mounting table 3.

A rectangular shower head 5 having a size corresponding to the substrate G is provided on the top wall of the chamber 2 so as to be opposed to the substrate stage 3 . The shower head 5 is made of metal and is grounded to have a function as an upper ground.

The gas space 6 is formed inside the shower head 5, and the gas introduction hole 7 is formed so as to penetrate the center of the top wall of the chamber 2 and the center of the upper portion of the shower head 5 to reach the gas space 6. Also, a majority is formed under the shower head 5. The gas is discharged from the hole 8.

The gas supply pipe 9 is connected to the gas supply pipe 9 and the gas supply pipe 9 is supplied from the gas supply mechanism 10 to the gas space 6 of the shower head 5 via the gas supply pipe 9 . Then, the processing gas supplied to the gas space 6 can be discharged from the gas discharge hole 8 toward the substrate G. The gas supply pipe 9 is provided with a valve 11 and a gas flow controller (not shown).

An upper electrode (second electrode) 15 formed of a low-resistance conductor such as copper or aluminum is provided directly under the shower head 5. As shown in Fig. 2, the upper electrode 15 is composed of two comb-shaped electrode members 16, 17 which are formed by the comb-shaped electrode members 16, 17 to form one electrode plane. Each of the electrode members 16 and 17 has a plurality of rectangular comb teeth 31 extending in parallel at equal intervals. One end of the plurality of comb teeth 31 is connected by the connecting portion 32, and the other end is Become a terminal. Further, the power supply unit 33 is formed in the connection portion 32. Further, the electrode members 16, 17 are disposed such that the power feeding portion 33 is located on the same side, and the terminal is located on the same side, and the comb teeth 31 of the electrode member 16 and the comb teeth 31 of the electrode member 17 are alternately formed at equal intervals. The upper electrode 15 is connected to the high frequency power source 20 via the integrator 19 via the feed line 18. At the time of power supply, power can be supplied from the one high frequency power source 20 to the power feeding portions 33 of the two electrode members 16 and 17. Further, the terminal end of the electrode member 16 is grounded, and the terminal end of the electrode member 17 is an open terminal. Further, in this example, the electrode members 16 and 17 cross each other in the vicinity of the power supply portion, and are vertically isolated at the intersection portion, but are disposed in a planar shape at the arrangement portion of the substrate G.

The upper electrode 15 is supported by the insulating member 21. That is, as The shower head 5 and the upper electrode 15 of the grounding function are insulated by the insulating member 21. The insulating member 21 is formed in a comb shape corresponding to the electrode members 16 and 17.

As shown in an enlarged view of FIG. 3, a gas space 23 is formed inside the electrode members 16, 17. Further, a plurality of gas discharge holes 24 are formed on the lower surface of the electrode members 16 and 17 so as to be connectable to the gas space 23. The gas supply pipe 22 extending from the gas supply mechanism 10 is connected to the gas space 23, and the processing gas for plasma processing is supplied from the gas supply mechanism 10 to the gas space 23 of the electrode members 16 and 17 via the gas supply pipe 22. Then, the processing gas supplied to the gas space 23 can be discharged from the gas discharge hole 24 toward the substrate G. A valve 25 and a gas flow controller (not shown) are provided in the gas supply pipe 22.

In this manner, in addition to the shower head 5, the processing gas is discharged from the electrode members 16 and 17 close to the upper electrode 15 of the substrate G, whereby the processing gas can be uniformly supplied to the substrate G.

The electrode members 16 and 17 form a standing wave due to the supply of high-frequency power. As the electrode is enlarged, the electrode size is close to the propagation wavelength of the high-frequency power, whereby a standing wave is generated on the electrode. As a result of the standing wave, a voltage distribution is generated in the electrode members 16, 17. However, by controlling the distribution of the plurality of standing waves formed on the electrode members 16, 17, the voltage distribution formed in the plane of the electrodes in accordance with the sum of the plurality of standing waves can be made uniform.

The standing waves of the electrode members 16 and 17 vary depending on the impedance characteristics of the electrode members 16 and 17, and the standing wave can be controlled by adjusting the impedance characteristics. In the present embodiment, the terminal of the electrode member 16 is grounded, and the electrode member 17 is When the terminal is open, the wavelength of the standing wave generated on the electrode member is λ, and the length of the upper electrode 15, that is, the length of the comb teeth 31 of the electrode members 16 and 17 is set to the line length L, so that the height is high. The frequency of the high-frequency power applied by the frequency power source 20 is a frequency such that the line length L = (λ / 4) × n (n is an integer). Thereby, a uniform voltage distribution can be formed in the electrode plane.

4 is a view showing a relationship between a position in the longitudinal direction of the electrode members 16 and 17 having a line length L and a voltage (absolute value) at the position, and FIG. 4(a) shows the above equation, where n=1, that is, application. When L = λ / 4, FIG. 4 (b) shows when n = 2, that is, when L = λ/2 is applied. That is, Fig. 4 shows a standing wave distribution formed on the electrode member. As shown in FIG. 4, the sum V1+V2 of the voltage V1 of the standing wave of the electrode member 16 and the voltage V2 of the standing wave of the electrode member 17 is almost uniform in the longitudinal direction of the electrode member. The comb teeth 31 of the electrode member 16 and the comb teeth 31 of the electrode member 17 are arranged alternately and equally spaced, and thus the bias of the voltage distribution caused by the standing waves of the electrode member 16 and the electrode member 17 is formed by the electrode members 16, 17. The plane of the electrodes is averaged, and the voltage distribution in the plane of the electrodes is uniform.

At a height position between the shower head 5 and the upper electrode 15 of the opposite side walls of the chamber 2, a vent hole 26 is formed, where the vent hole 26 is connected to the exhaust pipe 27, and the exhaust pipe 27 is connected to the exhaust device 28. . The exhaust device 28 is a vacuum pump having a turbo molecular pump or the like, whereby the inside of the chamber 2 can be evacuated to a predetermined reduced pressure environment. By the exhaust device 28, the supplied processing gas is rapidly exhausted from the space between the upper electrode 15 and the shower head 5 in the lateral direction, so that the residence time in the chamber 2 of the processing gas can be shortened.

Further, a substrate carry-out port 29 is provided on the side wall of the chamber 2, and the substrate The carry-out port 29 can be opened and closed by the gate valve 30. Then, when the gate valve 30 is opened, the substrate G is carried out by the transfer device (not shown) via the substrate carry-in/out port 29.

The plasma processing apparatus 1 has a control unit 40 including a microprocessor (computer) that controls each component, and is configured such that each component is connected to the control unit 40 and controlled.

Next, the processing operation of the plasma processing apparatus 1 configured as above will be described.

First, the gate valve 30 is opened, and the substrate G is carried into the chamber 2 through the substrate carry-in/out port 29 by a transfer arm (not shown), and is placed on the substrate stage 3 .

Then, the gate valve 30 is closed, and the inside of the chamber 2 is evacuated to a predetermined degree of vacuum by the exhaust device 28. Then, the processing gas is supplied from the processing gas supply unit 10 to the chamber 2 via the processing gas supply pipes 9 and 22, the shower head 5, and the electrode members 16 and 17 of the upper electrode 15, and the chamber 2 is supplied. Internal control is at the specified pressure. In this state, high-frequency power for plasma generation is applied to the upper electrode 15 from the high-frequency power source 20 via the integrator 19, and a high-frequency electric field is generated between the substrate mounting table 3 as the lower electrode, and generation processing is performed. The plasma of the gas is subjected to a plasma treatment, such as a plasma CVD process, on the substrate G by means of the plasma.

In the past, when a flat plate was used as the upper electrode, as the size of the upper electrode was increased, when the high frequency power was applied, a standing wave was generated on the electrode of the power transmission path, and thus the voltage distribution on the electrode was generated. Forming non-uniformity, plasma generated by the applied high-frequency power will also form It is not uniform and it is difficult to perform uniform plasma treatment.

On the other hand, in the present embodiment, the electrode member 16 and the comb teeth 31 of the electrode member 17 can be alternately formed at equal intervals so that the comb teeth 31 of the electrode member 16 can be formed, and the comb-shaped electrode member 16 can be disposed. The electrode member 17 constitutes the upper electrode 15, and by controlling the distribution of a plurality of standing waves formed in the electrode members 16, 17, the voltage distribution formed in the electrode plane in accordance with the sum of the plurality of standing waves can be Form uniformity. Specifically, the terminal of the electrode member 16 is grounded, the terminal of the electrode member 17 is opened, and the wavelength of the standing wave generated on the electrode member is λ, and the high frequency applied from the high-frequency power source 20 is applied. The frequency of the electric power becomes a frequency such that the line length L = (λ / 4) × n (n is an integer), whereby as shown in Fig. 4, a uniform voltage distribution can be formed in the electrode plane.

Since a uniform voltage distribution is formed on the electrode plane in this manner, the electric field distribution between the upper electrode 15 and the substrate mounting table 3 of the lower electrode becomes uniform, and a uniform plasma can be formed. Therefore, the substrate G can be uniformly plasma-treated.

Further, during the plasma treatment, the processing gas is discharged from the electrode members 16 and 17 of the shower head 5 and the upper electrode 15, so that the processing gas can be uniformly supplied to the substrate G, and a more uniform plasma treatment can be performed.

Further, a vent hole 26 is formed at a height position between the shower head 5 and the electrode 15 of the chamber 2, and the chamber 2 is vented by the venting means 28 from the vent holes 26, thereby The supplied processing gas is rapidly exhausted from the space between the upper electrode 15 and the shower head 5 in the lateral direction, so that the residence time in the chamber 2 of the processing gas can be shortened, and the processing gas can be effectively prevented. Excessive dissociation increases the number of particles not involved in plasma treatment. Therefore, a good plasma treatment can be performed. For example, when plasma CVD is applied to microcrystalline germanium (μc-Si), if the SiH ₄ gas of the processing gas is excessively dissociated, microcrystallization is inhibited, and it is difficult to obtain a high-quality film. By rapidly venting in the lateral direction from the space between the shower head 5 and the upper electrode 15, the residence time of the processing gas in the chamber 2 can be shortened, and excessive dissociation of the processing gas can be suppressed, and high quality can be formed. Membrane.

As described above, after the substrate G is subjected to the plasma treatment, the application of the high-frequency power is stopped, and the supply of the processing gas is stopped. Then, after the exhaust in the chamber 2 is performed, the gate valve 30 is opened to carry out the substrate G from the chamber 2.

Further, in the first embodiment, the insulating member 21 is provided between the shower head 5 and the upper electrode 15 which are grounded at the upper portion. However, as shown in Fig. 5, the distance between the shower head 5 to which the upper portion is grounded and the upper electrode 15 is as shown in Fig. 5 . The d is formed sufficiently large, and the insulating member 21 may not be provided. In this case, when the distance between the substrate G and the substrate mounting table 3 of the lower electrode is D, it is preferable that D < d.

<Second embodiment>

Next, a second embodiment of the present invention will be described.

In the present embodiment, the present invention is applied to a batch type plasma processing apparatus which performs plasma treatment on a plurality of substrates.

Fig. 6 is a cross-sectional view showing a plasma processing apparatus according to a second embodiment of the present invention. This plasma processing apparatus 1' is a plasma processing apparatus which is basically configured in the same manner as the apparatus of Fig. 1, and has, for example, a surface A chamber (processing vessel) 51 composed of aluminum treated with an alumite treatment (anodizing treatment) is formed into a rectangular tube shape. A substrate mounting table 52 on which the lowermost substrate G is placed is provided at the bottom of the chamber 51. The substrate stage 52 is made of a metal such as aluminum, and is supported by the bottom of the chamber 51 via the insulating member 53. The substrate stage 52 is provided with a lower electrode for plasma processing as the lowermost substrate G, and is grounded. Further, a heater may be buried in the substrate mounting table 52 via an insulator.

Above the substrate mounting table 52, the four attached shower heads 54 that function as the mounting table functions of the substrates G of the second to fifth stages are arranged at equal intervals, and the same is placed above the uppermost stage of the shower head 54. The space is provided with a shower head 55 supported by the top wall of the chamber 51. The attached shower head 54 and the shower head 55 are grounded.

The four attached shower heads 54 have the function of discharging the processing gas to the substrates G of the first to fourth stages, and function as a ground for the upper portions of the first to fourth stages of the substrate G, and serve as the substrates for the second to fifth stages. The function of the mounting table of G serves as the function of the electrode below the substrate G of the second to fifth stages.

The upper electrode 15 for the lowermost substrate G is provided between the substrate mounting table 52 and the lowermost stage shower head 54, and the substrates of the second to fourth stages are provided between the adjacent ones of the four attached shower heads 54. The upper electrode 15 for G is provided with the upper electrode 15 for the substrate G of the fifth stage (uppermost stage) between the upper stage shower head 54 and the shower head 55.

The lower half of the attached shower head 54 has a gas space 57 and a gas discharge hole 58 similarly to the shower head 15 of Fig. 1, and the upper half is similar to the substrate stage 52, and may be embedded with an insulator inside to heat the substrate. Heating of G Device. Further, the shower head 55 has a gas space 57 and a gas discharge hole 58 as well as the shower head 5.

The above five upper electrodes 15 have the same configuration as the upper electrode 15 of the first embodiment. That is, the upper electrode 15 is composed of two comb-shaped electrode members 16 and 17, and the electrode faces are formed by the comb-shaped electrode members 16 and 17. Then, when power is supplied to the upper electrode 15, a plurality of standing waves formed on the electrode members 16, 17 are controlled, whereby a uniform voltage distribution is formed in the electrode plane in accordance with the sum of the plurality of standing waves. Further, similarly to the first embodiment, the insulating member 21 is formed in a comb shape so as to be compatible with the electrodes 16 and 17. The upper electrode 15 of the five is connected to a high-frequency power source 63 via an integrator 62 of the electric wire 61.

In the same manner as in the first embodiment, the gas supply pipe 64 is connected to the shower head 55 and the attached shower head 54, and the gas supply pipe 65 is connected to the upper electrode 15. Then, the gas supply means 70 supplies the processing gas to the shower head 55, the shower heads 54 and the electrode members 16 and 17 of the upper electrode 15 via the gas supply pipes 64 and 65, and similarly to the first embodiment, these can be used. A processing gas is discharged into the chamber 51. Further, a valve 66 and a gas flow controller (not shown) are provided in the gas supply pipe 64, and a valve 67 and a gas flow controller (not shown) are provided in the gas supply pipe 65.

A vent hole 71 is formed at a height position between the shower head 55 of the chamber 51 or the attached shower head 54 and the upper electrode 15, where the vent hole 71 is connected to the exhaust pipe 72, and the exhaust pipe 72 is connected to the exhaust pipe. A device (not shown) can be used to evacuate the chamber 51 to a predetermined reduced pressure environment by actuating the exhaust device. versus Similarly, in the first embodiment, the supplied processing gas is rapidly exhausted in the lateral direction from the space between the shower head 55 or the attached shower head 54 and the upper electrode 15, so that the processing gas can be shortened in the chamber 51. Stay time.

A substrate carry-out port (not shown) that can carry in and out five substrates G at a time is provided on the side wall of the chamber 51. The substrate carry-in/out port can be opened and closed by a gate valve (not shown). Then, when the gate valve is opened, the transfer device (not shown) carries out the five substrates G at a time through the substrate carry-out port.

The plasma processing apparatus 1' has a control unit 80 including a microprocessor (computer) that controls each component, and is configured such that each component is connected to the control unit 80 and controlled.

In the plasma processing of the plasma processing apparatus 1' configured as described above, five substrates G are carried into the chamber 51, and placed on the substrate mounting table 52 and the four attached shower heads 54, and the chambers are placed. A vacuum is applied to the chamber 51 to a predetermined degree of vacuum. Then, the processing gas is supplied from the processing gas supply means 70 to the chamber 51 via the processing gas supply pipes 64, 65, the shower head 55, and the shower heads 54 and the electrode members 16 and 17 of the upper electrode 15 at a predetermined flow rate. The chamber 51 is controlled to a predetermined pressure. In this state, the high-frequency power source 63 applies the high-frequency power for plasma generation to the upper electrode 15 via the integrator 62, and the high-frequency electric field is generated in the substrate stage 52 and the attached stage shower head 54 as the lower electrodes. A plasma of the processing gas is generated between the upper electrode 15 and the plasma is subjected to a plasma treatment such as plasma CVD treatment.

Thereby, as in the first embodiment, uniform formation is formed on the electrode plane. With the voltage distribution, the electric field distribution between the upper electrode 15 and the lower electrode substrate mounting table 52 and the attached stage shower head 54 is uniform, and the same effect as that of the first embodiment in which uniform plasma can be formed can be obtained. In addition, the substrate G of the plurality of sheets can be subjected to plasma treatment at a time, so that the processing efficiency is extremely high.

In the second embodiment, the plasma processing apparatus for processing five substrates at a time is used. However, the number of substrates that can be processed at one time is not limited thereto, and may be any number of two or more.

<Third embodiment>

Next, a third embodiment of the present invention will be described.

Here, another example of the upper electrode is shown. Fig. 7 is a plan view showing an upper electrode according to a third embodiment of the present invention. As shown in Fig. 7, the upper electrode 95 of the present embodiment is composed of two comb-shaped electrode members 96 and 97, and one electrode plane is formed by the comb-shaped electrode members 96 and 97. Similarly to the electrode members 16 and 17 of the first embodiment, the electrode members 96 and 97 have a plurality of rectangular comb teeth 31 extending in parallel at equal intervals, and one end of the plurality of comb teeth 31 It is connected by the connection unit 32, and the other end is a terminal. Further, the power supply unit 33 is formed in the connection portion 32. Further, the electrode members 96 and 97 are disposed to face each other, and the comb teeth of the electrode member 96 and the comb teeth of the electrode member 97 are alternately formed at equal intervals. The power supply unit 33 of the electrode member 96 is connected to the first high frequency power supply 94a via the first integrator 93a via the power supply line 92a. Further, the power supply unit 33 of the electrode member 97 is connected to the second high frequency via the second integrator 93b via the electric wire 92b. Power supply 94b. Of course, it is also possible to supply power to the two electrode members 96, 97 from the same high-frequency power source. Further, the end of each comb tooth 31 of the electrode member 96 is an open end, and the end of each comb tooth of the electrode member 97 is grounded.

Similarly to the electrode members 16 and 17, the electrode members 96 and 97 form a standing wave by supplying high-frequency power. By controlling the distribution of the plurality of standing waves formed on the electrode members 96, 97, the voltage distribution formed on the electrode plane in accordance with the sum of the plurality of standing waves can be made uniform.

The standing waves of the electrode members 96 and 97 vary depending on the impedance characteristics of the electrode members 96 and 97, and the distribution of the standing waves can be controlled by adjusting the state of the terminals to adjust the impedance characteristics. In the present embodiment, the terminal of the electrode member 96 is opened, the terminal of the electrode member 97 is grounded, and the wavelength of the standing wave generated on the electrode member is λ, and the length of the upper electrode 95 is also the electrode. When the length of the comb teeth 31 of the members 96 and 97 is the line length L, the frequency of the high-frequency power applied from the first and second high-frequency power sources 94a and 94b is set to a line length L = (λ/2) × n ( n is an integer). Thereby, a uniform voltage distribution can be formed in the electrode plane.

8 is a view showing the relationship between the position of the electrode members 96 and 97 of the line length L in the longitudinal direction and the voltage (absolute value) at the position, and FIG. 8(a) shows the above equation, where n=1, that is, application. When L = λ/2, FIG. 8(b) shows when n=2, that is, when L=λ is applied. That is, FIG. 8 shows the standing wave distributor on the electrode members 96 and 97. As shown in FIG. 8, the sum V1+V2 of the standing wave voltage V1 of the electrode member 96 and the standing wave voltage V2 of the electrode member 97 is almost uniform in the longitudinal direction of the electrode member.

By using the upper electrode 95 of the present embodiment as described above, the first embodiment is used. In the same form, a uniform plasma can be formed. Therefore, the substrate G can be uniformly plasma-treated.

Further, the upper electrode of this embodiment can of course be applied to the one-piece type apparatus of the first embodiment or the batch type apparatus of the second embodiment.

<Fourth embodiment>

Next, a fourth embodiment of the present invention will be described.

Here, another example of the upper electrode is shown. FIG. 9 is a plan view showing an example of an upper electrode according to a fourth embodiment of the present invention, and FIG. 10 is a plan view showing another example.

As shown in Fig. 9, the upper electrode 105 of the present embodiment is composed of two comb-shaped electrode members 106 and 107, and one electrode plane is formed by the comb-shaped electrode members 106 and 107. Similarly to the electrode members 16 and 17 of the first embodiment, the electrode members 106 and 107 have a plurality of rectangular comb teeth 31 extending in parallel at equal intervals, and one end of the plurality of comb teeth 31 It is connected by the connection unit 32, and the other end is a terminal. Further, the power supply unit 33 is formed in the connection portion 32. Further, the electrode members 106, 107 are arranged to face each other, and the comb teeth 31 of the electrode member 106 and the comb teeth 31 of the electrode member 107 are alternately formed at equal intervals. The power feeding unit 33 of the electrode member 106 is connected to the first high frequency power source 104a via the first integrator 103a via the power line 102a. Further, the power feeding unit 33 of the electrode member 107 is connected to the second high-frequency power source 104b via the second integrator 103b via the power line 102b. The frequencies of the high frequency power sources 104a, 104b are the same. Of course, it is also possible to supply power to the two electrode members 106, 107 from the same high-frequency power source. and Further, the terminal end of each of the comb teeth 31 of the electrode member 106 is in the same state as the end of each comb tooth 31 of the electrode member 107. The example of Figure 9 is that any terminal is grounded. The example of Fig. 10 is that the terminal of the electrode member 106 and the terminal of the electrode member 107 are both open.

Similarly to the electrode members 16 and 17, the electrode members 106 and 107 form a plurality of standing waves by supplying high-frequency power. The standing waves of the electrode members 106 and 107 vary depending on the impedance characteristics of the electrode members 106 and 107, and the distribution of the standing waves can be controlled by adjusting the state of the terminals to adjust the impedance characteristics. In the present embodiment, the electrode member 106 and the electrode member 107 are formed in the same terminal state, and the electrode member 106 and the electrode member 107 are formed in the same standing wave distribution, and by arranging the phases to be symmetrical, it is possible to follow the same. The sum of the plurality of standing waves to form a voltage distribution formed on the electrode plane forms uniform.

11 is a view showing the relationship between the position of the electrode members 106 and 107 of the line length L in the longitudinal direction and the voltage (absolute value) at the position, that is, the standing wave distribution on the electrode member, and FIG. 11(a) is the electrode member 106. When the terminal of the 107 (comb 31) is grounded, FIG. 11(b) is when the terminals of the electrode members 106 and 107 (the comb 31) are open. As shown in FIG. 11, the electrode members 106 and 107 having the same standing wave distribution are arranged symmetrically, and the standing wave distribution forms line symmetry with respect to the center line (L/2) of the line length L, and thus the standing wave of the electrode member 106 The sum V1+V2 of the voltage V1 and the voltage V2 of the standing wave of the electrode member 107 is almost uniform in the longitudinal direction of the electrode member. Such a standing wave distribution can be realized by applying high frequency power corresponding to the frequency from the high frequency power sources 104a, 104b.

By using the upper electrode 105 of the present embodiment as described above, a uniform plasma can be formed as in the first embodiment. Therefore, the substrate G can be uniformly plasma-treated.

Further, the upper electrode of this embodiment can of course be applied to the one-piece type apparatus of the first embodiment or the batch type apparatus of the second embodiment.

<Fifth Embodiment>

Next, a fifth embodiment of the present invention will be described.

Here, another example of the upper electrode is shown. Fig. 12 is a plan view showing an example of an upper electrode according to a fifth embodiment of the present invention.

As shown in Fig. 12, the upper electrode 115 of the present embodiment is composed of electrode members 116 and 117 on two comb teeth, and one electrode plane is formed by the comb-shaped electrode members 116 and 117. Similarly to the electrode members 16 and 17 of the first embodiment, the electrode members 116 and 117 have a plurality of rectangular comb teeth 31 extending in parallel at equal intervals, and one end of the plurality of comb teeth 31 It is connected by the connection unit 32, and the other end is a terminal. Further, the connection portion 32 has the power supply portion 33. Further, the electrode members 116, 117 are arranged to face each other, and the comb teeth 31 of the electrode member 116 and the comb teeth 31 of the electrode member 117 are alternately formed at equal intervals. The power supply unit 33 of the electrode member 116 is connected to the first high-frequency power source 114a via the first integrator 113a via the power line 112a. Further, the power feeding unit 33 of the electrode member 117 is connected to the second high frequency power source 114b via the second integrator 113b via the power line 112b. The frequencies of the high frequency power supplies 114a, 114b are the same. Of course, it is also possible to supply power to the two electrode members 116, 117 from the same high-frequency power source. in The end of the comb teeth 31 of the electrode member 116 and the end of the comb teeth 31 of the electrode member 117 are provided with an impedance adjusting portion 118. The impedance adjustment unit 118 has a coil (L terminal) or a capacitor (C terminal).

Similarly to the above-described electrode members 16 and 17, the electrode members 116 and 117 are formed with standing waves due to the supply of high-frequency power. Since the standing wave is formed in this way, a voltage distribution is generated in the electrode members 116, 117, but by controlling the distribution of the plurality of standing waves formed on the electrode members 116, 117, it is possible to follow the sum of the plurality of standing waves. The voltage distribution formed on the plane of the electrode forms uniform.

The standing waves of the electrode members 116 and 117 vary depending on the impedance characteristics of the electrode members 116 and 117, and the distribution of the standing waves can be controlled by adjusting the state of the terminals to adjust the impedance characteristics. In the present embodiment, the impedance of the terminal end of the electrode member 116 and the electrode member 117 is adjusted by the impedance adjusting unit 118.

Due to the misalignment of the frequency of the high-frequency power applied to the upper electrode 115 and the line length L of the electrode members 116 and 117, only the terminals of the electrode members are grounded or opened, and there is a possibility that the electrode members cannot be formed on the electrode members. In the case of the distributed standing wave, the impedance adjusting unit 118 is provided at the end of the electrode members 116 and 117, and the terminal is a coil or a capacitor, and the phase of the standing wave is changed to obtain the desired standing wave. distributed.

13 is a view showing a relationship between a position in the longitudinal direction of the comb teeth of the wire length L of the electrode member 116 and a voltage (absolute value), that is, a standing wave distribution on the electrode member, and FIG. 13(a) shows the electrode member. When the terminal of 116 is grounded and the coil is provided as the impedance adjusting unit 118, FIG. 13(b) shows a case where the terminal of the electrode member 116 is grounded and a capacitor is provided as the impedance adjusting unit 118. As shown in Figure 13, when the coil is connected, relative to the ground terminal, before the phase When the capacitor is connected, the phase is delayed with respect to the ground terminal, and the standing wave distribution can be point-symmetric with respect to the point of the center line (L/2) of the line length L. Therefore, by arranging the electrode member 116 and the electrode member 117 in a symmetrical manner, the standing wave distribution can be made line-symmetric with respect to the center line (L/2) of the line length L, and the standing wave of the electrode member 116 can be made in the same manner as in the fourth embodiment. The sum V1+V2 of the voltage V1 and the voltage V2 of the standing wave of the electrode member 117 is almost uniform in the longitudinal direction of the electrode member.

By using the upper electrode 115 of the present embodiment as described above, a uniform plasma can be formed as in the first embodiment. Therefore, the substrate G can be uniformly plasma-treated.

Further, the upper electrode of this embodiment can of course be applied to the one-piece type apparatus of the first embodiment or the batch type apparatus of the second embodiment.

<Sixth embodiment>

Next, a sixth embodiment of the present invention will be described.

Here, another example of the structure of the shower head and the upper electrode as the upper grounding function is shown. Fig. 14 is a partial cross-sectional view showing an example of a plasma processing apparatus according to a sixth embodiment of the present invention, and Fig. 15 is a bottom view showing an upper electrode portion thereof.

In the plasma processing apparatus of the present embodiment, the structure of the shower head and the upper electrode is the same as that of the first embodiment, and the configuration is the same as that of the first embodiment.

A rectangular shower head 120 having a size corresponding to the substrate G is provided on the top wall of the chamber 2 so as to be opposed to the substrate stage 2 . Drench The bath head 120 is made of metal and is grounded to have a function as an upper ground. Further, there are a plurality of side grounds 121 that are provided to extend below.

An upper electrode 125 is provided directly below the shower head 120. As shown in Fig. 15, the upper electrode 125 is composed of two comb-shaped electrode members 126 and 127, and one electrode plane is formed by the comb-shaped electrode members 126 and 127. Each of the electrode members 126 and 127 has a longitudinally long rectangular cross section and has a plurality of comb teeth 31a extending in a straight line, and the plurality of comb teeth 31a extend in parallel at equal intervals. One end of the plurality of comb teeth 31a is connected by The part 32a is connected, and the other end is a terminal. Further, the power supply unit 33a is formed in the connection portion 32a. Further, the electrode members 126, 127 are arranged to face each other, and the comb teeth 31a of the electrode member 126 and the comb teeth 31a of the electrode member 127 are alternately formed at equal intervals. Although the power feeding portions 33a of the electrode members 126 and 127 are not shown, the high frequency power source is actually connected by the power supply via the integrator.

The side ground 121 is inserted between the adjacent comb teeth 31a as shown in Figs.

As shown in the enlarged view of Fig. 16, a gas space 131 is formed inside the shower head 120, and a processing gas is supplied thereto from a gas supply mechanism via a gas supply pipe (all not shown). Further, a gas space 132 is formed inside the side surface ground 121 so as to be continuous with the gas space 131, and a plurality of gases are formed on the both sides of the front end portion of the side surface ground 121 so as to be continuous with the gas space 132. The hole 133 is discharged. Then, the processing gas supplied to the gas space 131 is discharged into the chamber 2 through the gas space 132 and the gas discharge hole 133 and is discharged in the lateral direction.

Also, a gas space is formed inside the electrode members 126, 127 141. Further, a plurality of gas discharge holes 142 are formed on the side surfaces of the electrode members 126 and 127 so as to be connectable to the gas space 141. The gas in the gas space 142 is supplied through a gas supply mechanism and a gas supply pipe (all not shown). Then, the processing gas supplied to the gas space 141 is discharged into the chamber 2 through the gas discharge hole 142 and discharged in the lateral direction.

By providing the side surface ground 121 with respect to the comb teeth 31a constituting the electrode members 126 and 127, the electrode members 126 and 127 constituting the upper electrode 125 are coupled to the side surface ground 121 in addition to the substrate stage 3 coupled to the lower electrode. And the formation of plasma. Therefore, the distance between the substrate and the plasma can be pulled apart compared to the conventional structure. Therefore, it is possible to prevent an excessive plasma action from affecting the substrate G. For example, in the film formation of the μc-Si film, an excessive reaction on the substrate can be suppressed, and a high-quality film can be obtained.

In addition, the gas discharge hole 133 formed in the tip end portion of the side surface ground 121 and the gas discharge hole 142 formed in the electrode members 126 and 127 discharge the processing gas in the lateral direction, and exhaust the gas from the exhaust hole 26 in the lateral direction. The process gas can be exhausted more quickly than in the first embodiment, and the residence time in the chamber 2 of the process gas can be further shortened. Therefore, it is possible to more effectively prevent the treatment gas from being excessively dissociated to increase the particles which are not involved in the plasma treatment. For example, when it is applied to plasma CVD of amorphous yttrium (a-Si) or microcrystalline yttrium (μc-Si), the residence time of the processing gas of the SiH ₄ gas of the processing gas in the chamber 2 can be remarkably shortened, so that The film quality of the film formed by extremely suppressing the excessive dissociation of the processing gas can be further improved.

Figure 17 is a view showing a plasma processing apparatus according to a sixth embodiment of the present invention. A cross-sectional view of one of the other examples, and Fig. 18 is a cross-sectional view showing the shower head and the upper electrode in an enlarged manner.

This example is an example in which the side surface is grounded in the same manner as the examples of FIGS. 14 to 16. A side ground 151 is provided below the shower head 150 so as to form a semi-circular recess. Further, the upper electrode 155 is similar to the upper electrode 125 in that the comb-shaped electrode members 156 and 157 are opposed to each other in the same manner as in the examples of FIGS. 14 to 16 , but the comb members 156 and 157 are rounded. The cylindrical points are different. Further, the comb teeth 31b of the electrode members 156 and 157 are semicircular recesses located between the adjacent side surface grounds 151. Further, as shown in the enlarged view of Fig. 18, a gas space 161 is formed inside the shower head 150, and a processing gas is supplied thereto from a gas supply means via a gas supply pipe (all not shown). Further, a semicircular gas space 162 is formed along the semicircular recess in the inside of the side surface 151 so as to be continuous with the gas space 161, and the side surface 151 can be continuous with the gas space along the semicircular recess. In the manner of 162, a plurality of gas discharge holes 163 are formed. Then, the processing gas supplied to the gas space 161 is discharged through the gas space 162 and the gas discharge hole 163, and is supplied into the chamber 2.

Further, a gas space 171 having a circular cross section is formed inside the electrode members 156 and 157. Further, a plurality of gas discharge holes 172 are formed on the outer circumference of the electrode members 156 and 157 so as to be connectable to the gas space 171. The gas in the gas space 171 is supplied through a gas supply means and a gas supply pipe (all not shown). Then, the processing gas supplied to the gas space 171 is discharged through the gas discharge hole 172 in all directions. It is supplied into the chamber 2.

By providing the side surface ground 151 in the comb teeth 31b constituting the electrode members 156 and 157 as described above, the electrode members 156 and 157 constituting the upper electrode 155 are coupled to the substrate mounting table of the lower electrode, similarly to the example of FIGS. 14 to 16. In addition to 3, it is also coupled to the side ground 151 to form a plasma. Further, the comb teeth of the electrode members 156 and 157 constituting the upper electrode 155 are formed in a cylindrical shape, and the wall portion including the side surface 151 of the shower head 150 as the upper grounding function is also curved, so that the corner portion can be relaxed. The electric field is concentrated or the like, and the upper electrode 155 and the side ground 151 can be coupled more efficiently. Thereby, the coupling with the substrate mounting table 3 of the lower electrode is relatively reduced, so that the distance between the substrate G and the plasma can be further increased. Therefore, the plasma action on the substrate G can be further reduced.

Further, the gas discharge hole 163 formed in the semicircular recessed portion of the side surface ground 151 and the gas discharge hole 172 formed in the entire circumference of the cylindrical electrode members 156 and 157 discharge the processing gas, for example, from the exhaust hole 26 ( Referring to Fig. 1) the exhaust gas is in the lateral direction, so the exhaust gas conductivity is improved by the curved surface. Therefore, the process gas can be quickly exhausted compared to the above-described examples of FIGS. 14 to 16, and the residence time in the chamber 2 of the process gas can be further shortened.

Further, this embodiment is not limited to the one-piece device of the first embodiment, and of course, it can be applied to the batch type device of the second embodiment.

<Seventh embodiment>

Next, a seventh embodiment of the present invention will be described.

Here, it is shown that the upper electrode structure can be ideally supplied. Fig. 19 is a plan view showing one electrode member of the upper electrode of the seventh embodiment of the present invention.

The electrode member 176 of the upper electrode 175 of the present embodiment has a comb-tooth shape, and as in the other embodiments, one electrode plane is formed by a combination with other electrode members.

The electrode member 176 has eight comb teeth 181 arranged in parallel at predetermined intervals, and the base end sides of the comb teeth 181 are connected to each other by the first connecting portion 182. Then, the adjacent first connecting portions 182 are connected to each other by the second connecting portion 183 at the center, and the two second connecting portions 183 are connected by the third connecting portion 184 at the center. The power supply unit 185 is provided at the center of the third connection unit 184, and the power supply unit 185 is connected to the high frequency power supply 174 via the integrator 173 via the power supply line 172.

In the upper electrode 175 of the present embodiment, the power feeding portion 185 of the electrode member 176 is located at the center portion of the third connecting portion 184, and the high-frequency power is branched from the power feeding portion 185 to both sides of the third connecting portion 184, and then arrives at an equal distance. The center of the second connecting portion 183 is further divided on both sides of the second connecting portion 183, and reaches the center of the first connecting portion 182 at equal distances, and is more divided on both sides of the first connecting portion 182 at equal distances. Since the comb teeth 181 are provided, it is possible to supply electric power from the power feeding unit 185 to the respective comb teeth 181 with equal length. Therefore, high frequency electric power can be uniformly supplied to each of the comb teeth 181.

Further, the upper electrode of the present embodiment can be applied to any of the first to third embodiments, and can be applied to the one-piece device of the first embodiment or the batch type device of the second embodiment.

<Eighth Embodiment>

Next, an eighth embodiment of the present invention will be described.

Here, it is a spatial upper electrode structure showing an ideal power supply for consideration. Fig. 20 is a perspective view showing an upper electrode according to an eighth embodiment of the present invention.

The upper electrode 205 of the present embodiment is composed of two comb-shaped electrode members 206 and 207 as shown in Fig. 20 (a), and one electrode is formed by the comb-shaped electrode members 206 and 207. flat.

Each of the electrode members 206 and 207 has eight cylindrical comb teeth 211 arranged at equal intervals in parallel. The electrode members 206, 207 are arranged to be aligned, and the comb teeth 211 of the electrode member 206 and the comb teeth 211 of the electrode member 207 are alternately and equally spaced. In the electrode members 206 and 207, the base end sides of the comb teeth 211 are connected to each other by the first connecting portion 212. Then, the adjacent first connecting portions 212 are connected to each other by the second connecting portion 213 at the center, and the two second connecting portions 213 are connected at the center by the third connecting portion 214. The power feeding unit 215 is provided at the center of the third connecting portion 214. Further, the power feeding unit 215 is connected to the high frequency power source via an integrator (not shown).

The second connecting portion 213 has two hook portions 221 that are connected to the first connecting portion 212 and extend from the center of the first connecting portion 212 to the rear and the lower side, and the horizontal portion 222 is attached to the first portion The lower position of the connecting portion 213 is connected to the two hook portions 221 .

Further, the third connecting portion 214 has a horizontal portion 223 which is provided with a power feeding portion 215 in the center; The vertical portion 224 extends from both ends of the horizontal portion 223 to the vertical lower portion and is coupled to the center of the horizontal portion 222 of the second connecting portion 213.

Further, the first connecting portion 212, the second connecting portion 213, and the third connecting portion 214 are all flat, and the first connecting portion 212, the hook portion 221, and the vertical portion 224 have a wide surface and become a vertical surface. The portions 222, 223 have a wider surface that forms a horizontal plane.

In the upper electrode 205 having such a configuration, the power supply unit 215 of the electrode members 206 and 207 is located at the center of the third connection unit 214, and the high-frequency power is branched from the power supply unit 215 to the third connection. The two sides of the second connecting portion 213 are equidistant from the two sides of the second connecting portion 213, and are further distributed to the center of the first connecting portion 212 at equal distances, and are more divided. Since both sides of the first connecting portion 212 come to the respective comb teeth 211 at equal distances, the combing portions 211 can be electrically supplied from the power feeding portion 215 to the same length. Therefore, high frequency power can be uniformly supplied to each of the comb teeth 211.

Further, in the seventh embodiment, since the first to third connecting portions 212, 213, and 214 are provided in a planar manner, it is necessary to set a sufficient distance in consideration of the interference of the high-frequency transmission path. In the present embodiment, since the connection portion of the third connection portion 214 to the second connection portion 213 is the vertical portion 224, the power supply portion can be reduced as compared with the case where the connection portion is connected in the horizontal direction. space. Further, since the connecting portion of the second connecting portion 213 to the first connecting portion 212 is the hook portion 221, the space of the power feeding portion can be further reduced by the vertical component.

Further, as shown in FIG. 20(b), the hook portion 221 of the second connecting portion 213 which is closest to the wall portion of the chamber 2 among the power receiving portions is disposed so as to have a wider surface. The horizontal portion 222 of the second connecting portion 213 facing the chamber wall portion and closest to the substrate mounting table (lower electrode) 3 is disposed such that the wider surface faces the substrate mounting table 3, and is closest to the shower head (upper ground The horizontal portion 223 of the third connecting portion 214 (not shown in the figure) is disposed such that the wider surface faces the shower head, so that the induced electric field generated in the power feeding portion and the chamber wall portion, the lower electrode, and the upper portion can be suppressed. Capacitive coupling such as grounding improves transmission efficiency.

Further, as shown in FIG. 20(c), the horizontal portion 222 of the second connecting portion 213 and the horizontal portion 223 of the third connecting portion 214 are disposed at a sufficient interval in the vertical direction, and are arranged such that the wider surfaces face each other. The vertical portion of the hook portion 221 of the second connecting portion 212 and the third connecting portion 213 is sufficiently spaced in the horizontal direction, and the wide surfaces are arranged to face each other. Therefore, interference between the transmission paths is caused. suppressed. The distance between the first connecting portion 212 and the horizontal portion 222 of the second connecting portion 213 in the vertical direction is narrower than the interval between the horizontal portion 222 of the second connecting portion 213 and the horizontal portion 223 of the third connecting portion 214, and 1 The connecting portion 212 and the horizontal portion 222 are not facing each other, but the first connecting portion 212 and the horizontal portion 222 are connected by the hook portion 221, and the first connecting portion 212 and the horizontal portion 222 are not only in the vertical direction. Even the horizontal direction is also isolated, so that sufficient spacing can be ensured between these, and interference between them is also suppressed.

As described above, in the present embodiment, it is possible to perform uniform and efficient power supply while suppressing interference between the transmission path, the chamber wall or the lower electrode, the upper ground, or the interference between the transmission paths at the time of high-frequency power supply. And can also seek to save space.

Further, the upper electrode of the present embodiment is applicable to both the first and third to sixth embodiments, and can of course be applied to the one-piece type of the first embodiment. The batch type apparatus of the second embodiment is also provided.

In particular, the influence of interference is that the larger the area of the substrate is, the larger the area is. Therefore, the present embodiment is suitable for large-scale substrate processing. Further, the space saving effect is particularly large in the case of the batch type processing apparatus in which the substrate is disposed in a plurality of stages in the second embodiment.

Although the embodiments of the present invention have been described above, the present invention is not limited to the above embodiments, and various modifications can be made. For example, in the above embodiment, the upper electrode is constituted by two comb-shaped electrode members. However, as long as a uniform voltage distribution can be formed on the electrode plane, it is not limited to a comb shape. Further, it is not limited to two, and three or more electrode members may be used. Further, the shape of the electrode member is not limited to a comb shape, and various shapes can be used as long as a uniform voltage distribution can be obtained. In the above-described embodiment, the present invention is applied to a plasma treatment of a glass substrate for a FPD or a substrate for a solar cell. However, the present invention is not limited thereto and can be applied to various other substrates.

1‧‧‧Plastic processing unit

2. 51‧‧‧ chamber

3, 52‧‧‧ substrate mounting table (substrate support member; lower electrode (second electrode))

5, 55, 120, 150 ‧ ‧ shower head (upper ground)

10, 70‧‧‧ gas supply agencies

15, 95, 105, 115, 125, 155, 175, 205‧‧‧ upper electrode (second electrode)

16, 17, 96, 97, 106, 107, 116, 117, 126, 127, 156, 157, 176, 206, 207 ‧ ‧ electrode components

31, 31a, 31b, 181, 211‧‧ teeth

20, 63, 94a, 94b, 104a, 104b, 114a, 114b, 174‧‧‧ high frequency power supply

32, 32a, 32b‧‧‧ link

54‧‧‧With a shower head

118‧‧‧Impedance adjustment department

121, 151‧‧‧ side grounding

182, 212‧‧‧1st link

183, 213‧‧‧2nd link

184, 214‧‧‧3rd link

185, 215‧‧ ‧ power supply department

G‧‧‧Substrate

Fig. 1 is a cross-sectional view showing a plasma processing apparatus according to a first embodiment of the present invention.

Fig. 2 is a plan view showing an upper electrode used in the plasma processing apparatus of Fig. 1.

Fig. 3 is a partial cross-sectional view showing an enlarged portion showing an upper electrode used in the plasma processing apparatus of Fig. 1 and a shower head as an upper grounding function.

Fig. 4 is a view showing the length of the electrode member according to the first embodiment of the present invention; The relationship between the position of the direction and the voltage at that position shows the standing wave distribution of the electrode member.

Fig. 5 is a schematic view showing another example of the first embodiment of the present invention.

Fig. 6 is a cross-sectional view showing a plasma processing apparatus according to a second embodiment of the present invention.

Fig. 7 is a plan view showing an upper electrode according to a third embodiment of the present invention.

FIG. 8 is a view showing a relationship between a position in the longitudinal direction of the electrode member according to the third embodiment of the present invention and a voltage at the position, and shows a standing wave distribution of the electrode member.

Fig. 9 is a plan view showing an example of an upper electrode in a fourth embodiment of the present invention.

FIG. 10 is a plan view showing another example of the upper electrode according to the fourth embodiment of the present invention.

FIG. 11 is a view showing a relationship between a position in the longitudinal direction of the electrode member according to the fourth embodiment of the present invention and a voltage at the position, and shows a standing wave distribution of the electrode member.

Fig. 12 is a plan view showing an example of an upper electrode in a fifth embodiment of the present invention.

FIG. 13 is a view showing a phase change of a voltage distribution by an impedance adjusting unit in the upper electrode according to the fifth embodiment of the present invention.

Fig. 14 is a cross-sectional view showing a part of an example of a plasma processing apparatus according to a sixth embodiment of the present invention.

Figure 15 is a view showing the bottom of the upper electrode portion of the plasma processing apparatus of Figure 14; Surface map.

Fig. 16 is a cross-sectional view showing the upper electrode and the shower head of Fig. 14 in an enlarged manner.

Fig. 17 is a cross-sectional view showing a part of another example of the plasma processing apparatus according to the sixth embodiment of the present invention.

Fig. 18 is a cross-sectional view showing the upper electrode and the shower head of Fig. 17 in an enlarged manner.

Fig. 19 is a plan view showing one electrode member of the upper electrode of the seventh embodiment of the present invention.

Fig. 20 is a perspective view showing an upper electrode according to an eighth embodiment of the present invention.

1‧‧‧Plastic processing unit

2‧‧‧ chamber

3‧‧‧Substrate mounting table (substrate support member; lower electrode (second electrode))

4‧‧‧Insulating components

5‧‧‧ Shower head (upper ground)

6‧‧‧ gas space

7‧‧‧ gas introduction hole

8‧‧‧ gas discharge hole

9‧‧‧Gas supply piping

11‧‧‧ Valve

10‧‧‧ gas supply agency

15‧‧‧Upper electrode (2nd electrode)

16, 17‧‧‧electrode components

18‧‧‧Wire

19‧‧‧ Integrator

20‧‧‧High frequency power supply

21‧‧‧Insulating components

22‧‧‧Gas supply piping

25‧‧‧ valve

26‧‧‧ venting holes

27‧‧‧Exhaust pipe

28‧‧‧Exhaust device

29‧‧‧Substrate loading and unloading

30‧‧‧ gate valve

40‧‧‧Control Department

G‧‧‧Substrate

Claims (16)

A plasma processing apparatus includes: a processing container that houses a substrate to be processed; and a substrate supporting member that supports the substrate to be processed in the processing container, and has a function as a first electrode; and a second electrode a high-frequency power is applied to face the substrate supporting member; a gas introduction mechanism for introducing a processing gas into the processing container; and an exhaust mechanism for exhausting the inside of the processing container by the The high-frequency electric power is applied to the two electrodes, and a high-frequency electric field is formed between the first electrode and the second electrode, and the processing gas introduced from the gas introduction mechanism is plasma-formed, and the substrate to be processed is subjected to plasma treatment. The second electrode has two comb-shaped electrode members, and each of the electrode members has a power supply unit that supplies high-frequency power on one side of the plurality of comb teeth, and the other side has a terminal end, and the plurality of comb teeth The electrodes are arranged in parallel at equal intervals, and the electrode members are arranged such that the comb teeth of one electrode member and the comb teeth of the other electrode member are alternately and equally spaced, and the two electrodes are The component is disposed such that the power supply unit is located on the same side, the terminal is located on the same side, the terminal end of the comb tooth of one electrode member is set as the ground terminal, and the terminal end of the comb tooth of the other electrode member is set as the open terminal, and the electrode member is When the line length is set to L, and the wavelength of the standing wave generated on the electrode is λ, the high-frequency power of the frequency of L = (λ / 4) × n (n is an integer) is applied. In the above two electrode members. A plasma processing apparatus includes: a processing container that houses a substrate to be processed; and a substrate supporting member that supports the substrate to be processed in the processing container, and has a function as a first electrode; and a second electrode a high-frequency power is applied to face the substrate supporting member; a gas introduction mechanism for introducing a processing gas into the processing container; and an exhaust mechanism for exhausting the inside of the processing container by the The high-frequency electric power is applied to the two electrodes, and a high-frequency electric field is formed between the first electrode and the second electrode, and the processing gas introduced from the gas introduction mechanism is plasma-formed, and the substrate to be processed is subjected to plasma treatment. The second electrode has two comb-shaped electrode members, and each of the electrode members has a power supply unit that supplies high-frequency power on one side of the plurality of comb teeth, and the other side has a terminal end, and the plurality of comb teeth The electrodes are arranged in parallel at equal intervals, and the electrode members are arranged such that the comb teeth of one electrode member and the comb teeth of the other electrode member are alternately and equally spaced, and the two electrodes are In the case where the power supply unit is formed on the outer side and arranged in the opposite direction, the end of the comb tooth of one of the electrode members is the ground terminal, the comb tooth of the other electrode member is the open end, and the line length of the electrode member is set. In the case of L, when the wavelength of the standing wave generated on the electrode is λ, the high-frequency power at a frequency of L = (λ/2) × n (n is an integer) is applied to the above two electric powers. Pole component. A plasma processing apparatus includes: a processing container that houses a substrate to be processed; and a substrate supporting member that supports the substrate to be processed in the processing container, and has a function as a first electrode; and a second electrode a high-frequency power is applied to face the substrate supporting member; a gas introduction mechanism for introducing a processing gas into the processing container; and an exhaust mechanism for exhausting the inside of the processing container by the The high-frequency electric power is applied to the two electrodes, and a high-frequency electric field is formed between the first electrode and the second electrode, and the processing gas introduced from the gas introduction mechanism is plasma-formed, and the substrate to be processed is subjected to plasma treatment. The second electrode has two comb-shaped electrode members, and each of the electrode members has a power supply unit that supplies high-frequency power on one side of the plurality of comb teeth, and the other side has a terminal end, and the plurality of comb teeth The electrodes are arranged in parallel at equal intervals, and the electrode members are arranged such that the comb teeth of one electrode member and the comb teeth of the other electrode member are alternately and equally spaced, and the two electrodes are That the feeding line member is formed in the portion facing to the outside is arranged, with the impedance adjusting portion comb-shaped electrode member 2 of the terminal, by controlling the impedance adjuster to the standing wave of each electrode member. A plasma processing apparatus according to claim 3, wherein the impedance adjusting unit has a coil or a capacitor. The plasma processing apparatus according to any one of the first to fourth aspects of the present invention, wherein the substrate support member as the first electrode function is stacked in a plurality of layers in the processing container, and is capable of being aligned The second electrode is provided in a plurality of the substrate supporting members, and a plurality of substrates to be processed are supported by the plurality of substrate supporting members, and are plasma-treated together. The plasma processing apparatus according to any one of the first aspect of the invention, wherein the gas introduction unit has a shower head provided with a discharge processing gas provided above the second electrode. The plasma processing apparatus according to claim 6, wherein the electrode member has a gas discharge hole and a gas space for discharging the processing gas, and the processing gas is supplied to the gas space, and the gas introduction portion is provided. The processing gas is discharged from the electrode member. The plasma processing apparatus according to claim 7, wherein the exhaust mechanism exhausts in a lateral direction from a space between the shower head and the second electrode. The plasma processing apparatus according to any one of claims 1 to 4, wherein the electrode member has a grounding member that is grounded between the adjacent comb teeth. The plasma processing apparatus according to claim 9, wherein the gas introduction unit has a shower head provided with a discharge processing gas provided above the second electrode, and the grounding member is provided to protrude downward from the shower head. . A plasma processing apparatus according to claim 10, wherein The shower head is configured to discharge a processing gas from the grounding member, and the electrode member also constitutes a discharge of the processing gas, and the exhaust mechanism exhausts in a lateral direction from a space between the shower head and the second electrode. The plasma processing apparatus according to claim 10, wherein the grounding member forms a curved surface, and the comb members of the electrode member are formed in a cylindrical shape. The plasma processing apparatus according to claim 1, wherein the electrode member is formed with a transfer path that is electrically equal to each comb tooth from the power supply unit. The plasma processing apparatus according to claim 13, wherein the conveying path has a connecting portion that connects the adjacent comb teeth and a connecting portion that connects the connecting portions. The plasma processing apparatus according to claim 14, wherein the connecting portion connecting the connecting portions is connected by a vertical portion extending in a vertical direction. The plasma processing apparatus according to claim 15, wherein the conveying path is formed into a flat shape, and the conveying path is opposed to the wall portion of the processing container or the conductor of the processing container. The parts are wide-faced and opposite each other.