TWI538375B - Resonant converter system, method for resonant conversion and method of controlling resonant converter - Google Patents
Resonant converter system, method for resonant conversion and method of controlling resonant converter Download PDFInfo
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Description
本發明係關於一種DC/DC轉換器系統,且更特定而言,係關於用於一共振轉換器之同步整流器控制技術。 This invention relates to a DC/DC converter system and, more particularly, to a synchronous rectifier control technique for a resonant converter.
根據依照所主張標的物之實施例之以下詳細闡述,將明瞭該標的物之特徵及優點,應參考附圖來考量該闡述。 The features and advantages of the subject matter will be apparent from the following detailed description of the embodiments of the invention.
雖然將參考說明性實施例來繼續進行以下詳細闡述,但熟習此項技術者將明瞭該等實施例之諸多替代方案、修改形式及變化形式。 While the following detailed description is set forth with reference to the exemplary embodiments
一般而言,本發明提供用於一共振轉換器之控制技術。在一種控制技術中,該共振轉換器之整流器部分之切換器經控制以仿真一個二極體,例如,每一切換器經控制以在該切換器之內接二極體開始導通時導通,且每一切換器經控制以在穿過該切換器之電流接近一零交叉時斷開。以此方式,每一切換器之正向偏壓可經控制以使得跨越該切換器之電壓降比一習用二極體正向電壓降小得多,同時仍藉由防止穿過一同步整流器切換器之負電流來達成對電路之保護。此控制技術可基於同步整流器切換器之先前導通時間而預測閘驅動信號且反覆地給該等閘驅動信號加上延遲或自該等閘驅動信號減去延遲,以使得閘驅動信號之下降邊緣實質上匹配穿過該切換器之電流之零交叉點。可在一變頻器級之切換頻率處於或低於一共振頻率(f0)時使用此預測技術來補償由電路組件引入之組件容限及/或誤差之 可變性。當變頻器級之切換頻率高於共振頻率(f0)時,同步整流器切換器在變頻器級中之切換器斷開之後繼續導通,且同步導通時間主要由變頻器級之切換頻率判定。此可能在僅基於先前切換循環之同步導通時間控制同步整流器時產生穿過整流器切換器之負電流,且因此,在另一控制技術中,基於用於控制變頻器級切換器之導通狀態之一時脈信號來控制整流器部分之切換器以補償一經截短之共振週期,例如,每一整流器切換器經控制以使得該整流器切換器之導通狀態小於或等於穿過該整流器切換器之電流之經截短零交叉點。可同時採用此等控制技術中之每一者來達成貫穿所有操作頻率之電流保護。 In general, the present invention provides control techniques for a resonant converter. In one control technique, a switcher of a rectifier portion of the resonant converter is controlled to emulate a diode, for example, each switch is controlled to conduct when an internal diode of the switch begins to conduct, and Each switch is controlled to open when the current through the switch approaches a zero crossing. In this manner, the forward bias of each switch can be controlled such that the voltage drop across the switch is much less than a conventional diode forward voltage drop while still preventing switching through a synchronous rectifier. The negative current of the device is used to achieve protection of the circuit. The control technique can predict the gate drive signal based on the previous on-time of the synchronous rectifier switch and repeatedly delay or subtract the delay from the gate drive signal to cause the falling edge of the gate drive signal to be substantially The upper zero point is matched to the current through the switch. This prediction technique can be used to compensate for component tolerances and/or errors introduced by circuit components when the switching frequency of a frequency converter stage is at or below a resonant frequency (f0). Variability. When the switching frequency of the inverter stage is higher than the resonance frequency (f0), the synchronous rectifier switch continues to be turned on after the switch in the inverter stage is turned off, and the synchronous on-time is mainly determined by the switching frequency of the inverter stage. This may generate a negative current through the rectifier switch when the synchronous rectifier is controlled based only on the synchronous on-time of the previous switching cycle, and thus, in another control technique, based on one of the conduction states for controlling the inverter-level switcher The pulse signal controls the switch of the rectifier portion to compensate for a truncated resonant period, for example, each rectifier switch is controlled such that the rectifier switch is turned on less than or equal to the current through the rectifier switch Short zero crossing point. Each of these control techniques can be employed simultaneously to achieve current protection across all operating frequencies.
圖1圖解說明依照本發明之各種實施例之一共振轉換器系統100。圖1之轉換器系統100包含:一個一次側級102,其包含變頻器電路;及一個二次側級104,其包含同步整流器電路,且系統100一般作為接收一輸入DC電壓(VIN)且產生一輸出DC電壓(VOUT)之一DC/DC共振轉換器電路操作。在一項實施例中,一次側102之變頻器電路包含配置成一半橋式組態之兩個切換器Q1及Q2。切換器Q1及Q2之導通狀態由閘控制電路106控制,閘控制電路106包含為該等切換器中之每一者設定接通/斷開頻率之一可控振盪器(OSC)。切換器控制電路106亦可包含延遲機構(例如,如所展示之DELAY)以防止每一切換器同時導通。包含變壓器108、共振電容器Cr及共振電感器Lr之一共振槽電路操作以自由切換器Q1及Q2產生之方形波產生一正弦波 形。系統100之共振頻率(f0)一般由共振電容器Cr及共振電感器Lr控制。一般而言,DC/DC轉換器系統100之增益可由切換器Q1及Q2之切換頻率(fs)與共振頻率(f0)之比較控制。在某些實施例中,系統100之增益在fs<f0時較大且在fs>f0時較小。當然,在其他實施例中,變頻器電路可包含(舉例而言)一全橋式變頻器拓撲、一推挽式變頻器拓撲、C類變頻器拓撲等。 FIG. 1 illustrates a resonant converter system 100 in accordance with various embodiments of the present invention. The converter system 100 of FIG. 1 includes a primary side stage 102 that includes a frequency converter circuit, and a secondary side stage 104 that includes a synchronous rectifier circuit, and the system 100 generally receives and receives an input DC voltage (VIN) and generates One of the output DC voltages (VOUT) is operated by a DC/DC resonant converter circuit. In one embodiment, the primary side 102 of the frequency converter circuit includes two switches Q1 and Q2 configured in a half bridge configuration. The conduction states of the switches Q1 and Q2 are controlled by a gate control circuit 106 that includes an controllable oscillator (OSC) that sets an on/off frequency for each of the switches. The switch control circuit 106 can also include a delay mechanism (e.g., DELAY as shown) to prevent each switch from turning on at the same time. One of the resonant tank circuits including the transformer 108, the resonant capacitor Cr and the resonant inductor Lr operates to generate a sine wave by the square wave generated by the free switchers Q1 and Q2 shape. The resonant frequency (f0) of system 100 is typically controlled by resonant capacitor Cr and resonant inductor Lr. In general, the gain of the DC/DC converter system 100 can be controlled by a comparison of the switching frequency (fs) of the switches Q1 and Q2 with the resonant frequency (f0). In some embodiments, the gain of system 100 is larger at fs < f0 and smaller at fs > f0. Of course, in other embodiments, the frequency converter circuit can include, for example, a full bridge frequency converter topology, a push-pull frequency converter topology, a class C frequency converter topology, and the like.
二次側級104之同步整流器電路包含整流器切換器SR1及SR2,整流器切換器SR1及SR2電耦合至變壓器108之二次側且經組態以作為變壓器108之二次側處之正弦信號之一全波整流器操作。SR切換器可包含沿一源極至汲極方向(如所展示)偏壓之內接二極體之MOSFET裝置。切換器SR2之導通狀態可由同步整流器(SR)控制電路110控制,且切換器SR1之導通狀態可由SR控制電路112控制。一般而言,SR控制電路110及112經組態以分別產生閘控制信號來控制SR2及SR1之導通,以便使內接二極體導通時間最小化且以便減小或消除跨越SR切換器之負電流,如下文所闡述。 The synchronous rectifier circuit of the secondary side stage 104 includes rectifier switches SR1 and SR2 that are electrically coupled to the secondary side of the transformer 108 and configured to function as one of the sinusoidal signals at the secondary side of the transformer 108. Full wave rectifier operation. The SR switch can include a MOSFET device that is biased in a source-to-drain direction (as shown) with an inscribed diode. The conduction state of the switch SR2 can be controlled by the synchronous rectifier (SR) control circuit 110, and the conduction state of the switch SR1 can be controlled by the SR control circuit 112. In general, SR control circuits 110 and 112 are configured to generate gate control signals to control the conduction of SR2 and SR1, respectively, to minimize the in-line contact time and to reduce or eliminate the negative across the SR switch. Current, as explained below.
圖2圖解說明依照本發明之一項實施例之同步整流器控制電路110。應理解,開始,由於控制電路110及112一般經組態以產生互補閘控制信號,因此電路110之操作類似於112之操作,惟電路112係根據如圖1中所展示之一反相時脈信號(SR_CLK2)計時除外。因此,控制電路110之以下闡述同樣適用於電路112,惟由電路110產生之閘控制信 號與電路112之閘控制信號異相大約180度除外。至SR控制電路110之輸入包含SR切換器之汲極電壓(VDS_SR)及來自振盪器之時脈信號(OSC)。SR控制電路110包含零交叉近似電路208,零交叉近似電路208經組態以產生指示SR切換器之導通狀態之一SR導通信號209。當SR切換器正導通時,跨越切換器之電壓降接近零伏,且當SR切換器斷開時,跨越SR切換器之電壓降係高的(通常大於跨越SR切換器之內接二極體218之電壓降)。SR控制電路110亦包含經組態以對導通時間(由信號209指示)進行取樣之取樣與保持電路210。為了防止流過SR切換器之電流零交叉,該取樣與保持電路亦經組態以產生比例SR導通信號211(SR_CND_P)。將信號211產生為信號209之一分率,舉例而言,信號211可係由信號209指示之導通時間之90%。 FIG. 2 illustrates a synchronous rectifier control circuit 110 in accordance with an embodiment of the present invention. It should be understood that, initially, since control circuits 110 and 112 are generally configured to generate complementary gate control signals, operation of circuit 110 is similar to operation of 112, except that circuit 112 is based on one of the inverted clocks as shown in FIG. Except for signal (SR_CLK2) timing. Therefore, the following description of control circuit 110 applies equally to circuit 112, but the gate control signal generated by circuit 110 The number is different from the gate control signal of circuit 112 by approximately 180 degrees. The input to the SR control circuit 110 includes the drain voltage (VDS_SR) of the SR switch and the clock signal (OSC) from the oscillator. The SR control circuit 110 includes a zero crossing approximation circuit 208 that is configured to generate an SR turn-on signal 209 that indicates one of the turn-on states of the SR switch. When the SR switch is conducting, the voltage drop across the switch is near zero volts, and when the SR switch is open, the voltage drop across the SR switch is high (usually greater than the inscribed diode across the SR switch) 218 voltage drop). The SR control circuit 110 also includes a sample and hold circuit 210 that is configured to sample the on time (indicated by signal 209). To prevent current zero crossing through the SR switch, the sample and hold circuit is also configured to generate a proportional SR turn-on signal 211 (SR_CND_P). Signal 211 is generated as a fraction of signal 209, which may be, for example, 90% of the on-time indicated by signal 209.
SR控制電路110亦包含延遲控制電路212,延遲控制電路212經組態以給信號211之下降邊緣加上或減去一預定延遲時間以產生一預測閘控制信號213(VPRD)。延遲控制電路212利用時脈信號及一高偵測信號(由電路208產生且一般指示SR切換器之汲極電壓何時係高的)。基於SR切換器在一先前導通循環中之導通時間而產生預測閘控制信號213。因此,若SR切換器在當前切換器循環中之導通時間太長(以使得穿過切換器之電流與零交叉),則延遲控制電路212可減小信號213之延遲時間以使得SR切換器在下一循環中之導通時間縮短。相反地,若SR切換器在當前切換器循環中之導通時間太短(以使得在穿過切換器之電流與零 交叉之前存在其中SR切換器斷開之一空載時間),則延遲控制電路212可給信號213加上更多延遲以使得SR切換器在下一循環中之導通時間更長。 The SR control circuit 110 also includes a delay control circuit 212 that is configured to add or subtract a predetermined delay time to the falling edge of the signal 211 to produce a predicted gate control signal 213 (VPRD). Delay control circuit 212 utilizes a clock signal and a high detect signal (generated by circuit 208 and generally indicating when the gate voltage of the SR switch is high). A predicted gate control signal 213 is generated based on the on-time of the SR switch in a previous conduction cycle. Therefore, if the on-time of the SR switch in the current switch cycle is too long (so that the current through the switch crosses zero), the delay control circuit 212 can reduce the delay time of the signal 213 such that the SR switch is under The conduction time in one cycle is shortened. Conversely, if the SR switch is too short in the current switch cycle (so that the current through the switch is zero The delay control circuit 212 can add more delay to the signal 213 to make the SR switch's turn-on time longer in the next cycle, before there is a dead time in which the SR switch is disconnected.
取樣與保持電路210及延遲控制電路212可確保穿過SR切換器之電流不與零交叉,但准許該電流完成其由f0判定之共振循環。因此,當變頻器級102中之切換在f0處或在低於f0處發生時,延遲控制電路212可經組態以給SR導通信號209加上(或減去)延遲以達成SR切換器在穿過切換器之電流之零交叉點處或附近之切換。當變頻器級中之切換在高於f0處發生時,變頻器切換器(Q1或Q2)將在對應SR切換器之前斷開(此意謂共振槽中之共振週期被縮減或截短)。因此,在某些實施例中,SR控制電路110亦可包含容許切換窗(ASW)電路214,容許切換窗(ASW)電路214經組態以基於變頻器級切換器之斷開(由時脈信號OSC設定)與SR導通時間之末端之間的時間差而產生一ASW信號215。因此,ASW電路214經組態以接收來自一次級102之時脈信號(OSC)及SR導通信號209並判定時脈信號之末端與SR導通信號209之末端之間的時間差。產生包含加至該時脈信號之延遲時間之ASW信號215,以使得ASW信號215近似SR導通信號209之末端。類似於預測閘驅動信號213,可使用反覆技術產生ASW信號215,例如,ASW信號215可係基於SR切換器在一先前導通循環中之導通時間。SR控制電路110亦可包含經組態以對ASW信號215與預測閘驅動信號213進行「及」運算以產生SR閘驅動信號217之「及」閘電 路216。 The sample and hold circuit 210 and the delay control circuit 212 ensure that the current through the SR switch does not cross zero, but permits the current to complete its resonant cycle determined by f0. Thus, when switching in the frequency converter stage 102 occurs at f0 or below f0, the delay control circuit 212 can be configured to add (or subtract) a delay to the SR turn-on signal 209 to achieve the SR switch. Switching at or near the zero crossing of the current through the switch. When switching in the inverter stage occurs above f0, the inverter switch (Q1 or Q2) will open before the corresponding SR switch (this means that the resonant period in the resonant tank is reduced or truncated). Thus, in some embodiments, the SR control circuit 110 can also include an allowable switching window (ASW) circuit 214 that allows the switching window (ASW) circuit 214 to be configured to be based on the disconnection of the frequency converter level switch (by the clock) An ASW signal 215 is generated by the time difference between the signal OSC setting and the end of the SR on time. Thus, the ASW circuit 214 is configured to receive the clock signal (OSC) and the SR turn-on signal 209 from the primary stage 102 and determine the time difference between the end of the clock signal and the end of the SR turn-on signal 209. An ASW signal 215 is generated that includes a delay time applied to the clock signal such that the ASW signal 215 approximates the end of the SR turn-on signal 209. Similar to the predicted gate drive signal 213, the ASW signal 215 can be generated using a repetitive technique, for example, the ASW signal 215 can be based on the on-time of the SR switch in a previous conduction cycle. The SR control circuit 110 can also include a "AND" gate configured to "AND" the ASW signal 215 and the predicted gate drive signal 213 to generate the SR gate drive signal 217. Road 216.
圖3圖解說明依照本發明之一項實施例之各種信號之一時序圖300。此時序圖大體上係分解成兩個部分:左側320係第n個導通循環,且右側322係第(n+1)個導通循環。電流波形302繪示穿過SR切換器之電流,其標示為ISD_SR。電壓波形304繪示跨越SR切換器之汲極至源極電壓降,其標示為VDS_SR。在電壓波形304之第一部分中,該切換器閉合且因此跨越該切換器之電壓降係高的。當電流開始流過SR切換器時,該切換器之內接二極體218開始導通,且跨越該切換器之電壓降快速減小。此時,為了使內接二極體218導通之時間週期最小化,控制SR切換器以閉合切換器且開始經由該切換器之導通係有利的。總SR導通時間波形306緊密匹配電流波形302及電壓波形304之零交叉點。在第n個循環320中量測SR導通時間306,且將一比例SR導通波形308產生為SR導通時間306之一實質分率並應用於下一導通循環322(如箭頭所指示)。在此實例中,預測閘驅動波形310經產生以給比例SR導通波形308之下降邊緣加上延遲以使比例SR導通信號波形308與實際SR導通時間306之間的空載時間最小化。當然,若加上太多延遲,則在下一導通循環中可自比例SR導通信號308減去延遲,以使得預測閘驅動波形310實質上匹配SR導通時間306。此處理程序可反覆地繼續。亦繪示ASW波形312及閘驅動信號波形314。 FIG. 3 illustrates a timing diagram 300 of various signals in accordance with an embodiment of the present invention. This timing diagram is generally broken down into two parts: the left side 320 is the nth conduction cycle, and the right side 322 is the (n+1)th conduction cycle. Current waveform 302 depicts the current through the SR switch, which is labeled ISD_SR. Voltage waveform 304 depicts the drain-to-source voltage drop across the SR switch, which is labeled VDS_SR. In the first portion of voltage waveform 304, the switch is closed and thus the voltage drop across the switch is high. When current begins to flow through the SR switch, the inverting diode 218 of the switch begins to conduct and the voltage drop across the switch decreases rapidly. At this time, in order to minimize the time period during which the in-line diode 218 is turned on, it is advantageous to control the SR switch to close the switch and start the conduction through the switch. The total SR on-time waveform 306 closely matches the zero crossing of the current waveform 302 and the voltage waveform 304. The SR on time 306 is measured in the nth cycle 320 and a proportional SR on waveform 308 is generated as one of the SR on time 306 substantial fractions and applied to the next conduction cycle 322 (as indicated by the arrows). In this example, the predicted gate drive waveform 310 is generated to add a delay to the falling edge of the proportional SR turn-on waveform 308 to minimize the dead time between the proportional SR turn-on signal waveform 308 and the actual SR turn-on time 306. Of course, if too much delay is added, the delay can be subtracted from the proportional SR turn-on signal 308 in the next turn-on cycle such that the predicted gate drive waveform 310 substantially matches the SR turn-on time 306. This handler can continue over. The ASW waveform 312 and the gate drive signal waveform 314 are also shown.
圖4A圖解說明依照本發明之一項實施例之取樣與保持電路210。繼續參考圖2,此實施例之取樣與保持電路210經 組態以接收SR導通信號209並藉由給取樣電容器CSRT充電來對SR導通信號(209)進行取樣。將比例SR導通211產生為SR導通信號209之一選定分率。圖4B圖解說明連同圖4A之取樣與保持電路之操作一起之各種信號之時序圖450。分別將SR導通信號波形及比例SR導通信號波形繪示為306及308。波形452繪示取樣電容器CSRT之電壓斜升(VCRST)且亦繪示用於產生比例SR導通信號之一90%臨限值。 FIG. 4A illustrates a sample and hold circuit 210 in accordance with an embodiment of the present invention. With continued reference to FIG. 2, the sample and hold circuit 210 of this embodiment is The SR pass signal 209 is configured to receive the SR turn-on signal 209 and to sample the SR turn-on signal (209) by charging the sampling capacitor CSRT. The proportional SR turn-on 211 is generated as one of the selected values of the SR turn-on signal 209. 4B illustrates a timing diagram 450 of various signals along with the operation of the sample and hold circuit of FIG. 4A. The SR on signal waveform and the proportional SR on signal waveform are respectively shown as 306 and 308. Waveform 452 depicts the voltage ramp (VCRST) of the sampling capacitor CSRT and is also shown to generate a 90% threshold for the proportional SR on signal.
圖5A圖解說明依照本發明之一項實施例之延遲控制電路212。繼續參考圖2,延遲控制電路212經組態以產生預測閘驅動信號213以基於SR導通ON時間給比例SR導通信號211之末端(下降邊緣)加上(或減去)選定延遲時間週期,如高偵測信號所指示。此實施例之延遲控制電路212包含經組態以對比例SR導通信號211之末端賦予可選擇延遲時間之一4位元加權計數器。圖5B圖解說明連同圖5A之延遲控制電路之操作一起之各種信號之時序圖。第一組時序圖560圖解說明在空載時間(TD)大於一經程式化或預定空載時間(TPD)且因此加上延遲時之事例。舉例而言,波形308繪示比例SR導通信號,且波形310繪示包含加上之延遲以使空載時間最小化之預測閘驅動信號。第二組時序圖562圖解說明在空載時間(TD)小於一經程式化或預定空載時間(TPD)且因此減去延遲時之事例。舉例而言,波形308繪示比例SR導通信號,且波形310繪示包含較小延遲(在第n+1個循環中,與第n個循環相比)以最小化從而確保SR切換不在穿過SR切換器之電流之零交叉點過後發生之預測閘驅動 信號。 FIG. 5A illustrates a delay control circuit 212 in accordance with an embodiment of the present invention. With continued reference to FIG. 2, the delay control circuit 212 is configured to generate a predicted gate drive signal 213 to add (or subtract) a selected delay time period to the end (falling edge) of the proportional SR turn-on signal 211 based on the SR turn-on ON time, As indicated by the high detection signal. The delay control circuit 212 of this embodiment includes a 4-bit weighted counter configured to impart a selectable delay time to the end of the proportional SR turn-on signal 211. Figure 5B illustrates a timing diagram of various signals along with the operation of the delay control circuit of Figure 5A. The first set of timing diagrams 560 illustrates instances where the dead time (TD) is greater than a programmed or predetermined dead time (TPD) and thus a delay is added. For example, waveform 308 depicts a scaled SR turn-on signal, and waveform 310 depicts a predicted gate drive signal that includes a delay added to minimize dead time. The second set of timing diagrams 562 illustrates instances where the dead time (TD) is less than a programmed or predetermined dead time (TPD) and thus the delay is subtracted. For example, waveform 308 depicts a proportional SR turn-on signal, and waveform 310 depicts a small delay (in the n+1th cycle, compared to the nth loop) to minimize to ensure that the SR switch is not worn. Predictive gate drive that occurs after the zero crossing of the current of the SR switch signal.
圖6A圖解說明依照本發明之一項實施例之ASW電路214。在此實施例中,ASW電路214包含經組態以在變頻器級202中之切換器在高於共振槽電路之共振頻率下操作時控制閘控制信號217之時序之延遲選擇器電路212。繼續參考圖2,ASW電路214經組態以藉由以下操作產生ASW信號215:量測變頻器級切換器之斷開(由時脈信號OSC設定)與SR導通時間之末端之間的時間差且在存在任何差之條件下給時脈信號之末端(下降邊緣)加上若干可選擇延遲時間單位以產生ASW信號215。在此實例中,延遲選擇器電路包含複數個可選擇延遲電路,其中之每一者可給時脈信號之下降邊緣加上一預定延遲量。可加上延遲時間,因此可藉由啟用較多延遲電路產生額外延遲且可藉由啟用較少延遲電路產生較少延遲。每一延遲電路可經組態以產生相同延遲時間或不同(例如,經加權)延遲時間。 FIG. 6A illustrates an ASW circuit 214 in accordance with an embodiment of the present invention. In this embodiment, the ASW circuit 214 includes a delay selector circuit 212 that is configured to control the timing of the gate control signal 217 when the switch in the frequency converter stage 202 is operating above the resonant frequency of the resonant tank circuit. With continued reference to FIG. 2, the ASW circuit 214 is configured to generate an ASW signal 215 by measuring the time difference between the turn-off of the frequency converter switch (set by the clock signal OSC) and the end of the SR turn-on time and The end of the clock signal (falling edge) is added with a number of selectable delay time units to produce the ASW signal 215 in the presence of any difference. In this example, the delay selector circuit includes a plurality of selectable delay circuits, each of which can add a predetermined amount of delay to the falling edge of the clock signal. The delay time can be added so that additional delay can be generated by enabling more delay circuits and less delay can be generated by enabling fewer delay circuits. Each delay circuit can be configured to generate the same delay time or a different (eg, weighted) delay time.
圖6B圖解說明連同圖6A之延遲選擇器電路之操作一起之各種信號之時序圖650。電流波形302圖解說明變頻器級切換器之時序(由時脈波形652指示)在共振週期之前結束,即,fs>f0。在信號之尾端(在波形652之末端與波形306之末端之間)處所展示的電流波形302之部分指示一大體上線性電流波形。波形654圖解說明由延遲電路中之一者產生之一第一延遲時間週期。類似地,波形656及658圖解說明分別由第二、第三電路產生之延遲時間週期。注意,加上波形658之延遲時間週期將致使ASW信號312在當前波形之 後結束。因此,在此實例中,為了防止穿過SR切換器之電流之零交叉,可給時脈信號652加上延遲時間週期654及656以產生ASW信號312。 FIG. 6B illustrates a timing diagram 650 of various signals along with the operation of the delay selector circuit of FIG. 6A. The current waveform 302 illustrates the timing of the frequency converter stage switch (indicated by the clock waveform 652) ending before the resonance period, ie, fs > f0. The portion of the current waveform 302 shown at the end of the signal (between the end of the waveform 652 and the end of the waveform 306) indicates a substantially linear current waveform. Waveform 654 illustrates one of the first delay time periods produced by one of the delay circuits. Similarly, waveforms 656 and 658 illustrate the delay time periods produced by the second and third circuits, respectively. Note that the addition of the delay time period of waveform 658 will cause ASW signal 312 to be in the current waveform. After the end. Thus, in this example, to prevent zero crossing of the current through the SR switch, delay time periods 654 and 656 can be added to the clock signal 652 to generate the ASW signal 312.
根據一項態樣,本發明以一種共振轉換器系統為特徵。該共振轉換器系統包含一第一級、一變壓器及一第二級。該第一級包含經組態以自一DC輸入信號產生一AC信號之變頻器電路及共振槽電路。該變壓器經組態以對該AC信號進行變壓。該第二級包含一同步整流器(SR)電路,該同步整流器(SR)電路包含各自具有一內接二極體之複數個SR切換器。該SR控制電路經組態以產生閘控制信號以控制該SR切換器之導通狀態,以便使內接二極體導通時間最小化且減小或消除跨越該等SR切換器之一負電流。 According to one aspect, the invention features a resonant converter system. The resonant converter system includes a first stage, a transformer, and a second stage. The first stage includes a frequency converter circuit and a resonant tank circuit configured to generate an AC signal from a DC input signal. The transformer is configured to transform the AC signal. The second stage includes a synchronous rectifier (SR) circuit including a plurality of SR switches each having an inscribed diode. The SR control circuit is configured to generate a gate control signal to control the turn-on state of the SR switch to minimize in-line diode turn-on time and to reduce or eliminate negative current across one of the SR switchers.
根據另一態樣,本發明以一種方法為特徵,該方法包含:將一DC輸入信號變頻成具有一第一電壓之一AC經變頻信號;將該AC經變頻信號變壓成具有一第二電壓之一AC經變壓信號;及將第二AC經變壓信號整流成一DC輸出電壓信號,其中該整流包含控制各自具有一內接二極體之複數個同步整流器(SR)切換器之一導通狀態,以便使內接二極體導通時間最小化且減小或消除跨越該等SR切換器之一負電流。 According to another aspect, the invention features a method comprising: converting a DC input signal to an AC-converted signal having a first voltage; and transforming the AC-converted signal into a second And converting one of the voltages to a DC output voltage signal, wherein the rectifying comprises controlling one of a plurality of synchronous rectifier (SR) switches each having an inscribed diode The conduction state is such as to minimize the in-line contact time and reduce or eliminate a negative current across one of the SR switches.
根據又一態樣,本發明以一種控制一共振轉換器之方法為特徵。該方法包含:控制該共振轉換器之一整流器部分之複數個同步整流器(SR)切換器之一導通狀態,該等SR切換器中之每一者具有一內接二極體,其中每一切換器經控 制以在與該切換器相關聯之該內接二極體開始導通時導通,且每一切換器經控制以在穿過該切換器之電流接近一零交叉時斷開。 According to yet another aspect, the invention features a method of controlling a resonant converter. The method includes controlling an on state of a plurality of synchronous rectifier (SR) switches of a rectifier portion of the resonant converter, each of the SR switches having an inscribed diode, wherein each switching Controlled by The turn-on is turned on when the inline diode associated with the switch begins to conduct, and each switch is controlled to open when the current through the switch approaches a zero crossing.
術語「切換器」可體現為MOSFET切換器(例如,個別NMOS及PMOS元件)、BJT切換器及/或此項技術中已知的其他切換電路。另外,如在本文中之任一實施例中所使用,術語「電路(circuitry或circuit)」可以單個形式或以任一組合形式包括(舉例而言)硬連線電路、可程式化電路、狀態機電路及/或包含在一較大系統中之電路(舉例而言,可包含在一積體電路中之元件)。 The term "switch" can be embodied as MOSFET switches (eg, individual NMOS and PMOS components), BJT switches, and/or other switching circuits known in the art. In addition, as used in any embodiment herein, the term "circuitry or circuit" may include, for example, hardwired circuitry, programmable circuitry, state, in a single form or in any combination. The circuit and/or the circuitry contained in a larger system (for example, an element that can be included in an integrated circuit).
本文中已採用之術語及表達用作闡述而非限制術語,且在使用此等術語及表達時,並非旨在排除所示及所述特徵(或其若干部分)之任何等效物,而是應認識到,在申請專利範圍之範疇內可做出各種修改形式。因此,申請專利範圍意欲涵蓋所有此等等效物。本文中已闡述各種特徵、態樣及實施例。該等特徵、態樣及實施例易於彼此組合且易於做出變化形式及修改形式,如熟習此項技術者將理解。因此,本發明應視為囊括此等組合、變化形式及修改形式。 The terms and expressions used herein are used to describe and not to limit the terms, and the use of such terms and expressions is not intended to exclude any equivalents of the features shown and described. It will be appreciated that various modifications may be made within the scope of the patent application. Therefore, the scope of the patent application is intended to cover all such equivalents. Various features, aspects, and embodiments have been set forth herein. The features, aspects, and embodiments are susceptible to being combined with each other and are susceptible to variations and modifications, as will be understood by those skilled in the art. Accordingly, the invention is considered to be inclusive of such combinations, variations and modifications.
100‧‧‧共振轉換器系統/轉換器系統/系統/DC/DC轉換器系統 100‧‧‧Resonant Converter System / Converter System / System / DC / DC Converter System
102‧‧‧一次側級/一次側/變頻器級/一次級 102‧‧‧Primary/primary/inverter/primary
104‧‧‧二次側級 104‧‧‧secondary level
106‧‧‧閘控制電路/切換器控制電路 106‧‧‧ gate control circuit / switcher control circuit
108‧‧‧變壓器 108‧‧‧Transformers
110‧‧‧同步整流器(SR)控制電路/控制電路/電路 110‧‧‧Synchronous Rectifier (SR) Control Circuit / Control Circuit / Circuit
112‧‧‧同步整流器(SR)控制電路/控制電路/ 電路 112‧‧‧Synchronous Rectifier (SR) Control Circuit / Control Circuit / Circuit
208‧‧‧零交叉近似電路/電路 208‧‧‧zero crossing approximation circuit/circuit
209‧‧‧同步整流器導通信號/信號 209‧‧‧Synchronous rectifier turn-on signal/signal
210‧‧‧取樣與保持電路 210‧‧‧Sampling and holding circuit
211‧‧‧同步整流器導通信號/信號 211‧‧‧Synchronous rectifier turn-on signal/signal
212‧‧‧延遲控制電路/延遲選擇器電路 212‧‧‧ Delay Control Circuit / Delay Selector Circuit
213‧‧‧預測閘控制信號 213‧‧‧Predicted gate control signals
214‧‧‧容許切換窗(ASW)電路 214‧‧‧allowable switching window (ASW) circuit
215‧‧‧容許切換窗信號 215‧‧‧allowable switching window signal
216‧‧‧「及」閘電路 216‧‧‧"and" gate circuit
217‧‧‧同步整流器閘驅動信號/閘控制信號 217‧‧‧Synchronous rectifier gate drive signal / gate control signal
218‧‧‧內接二極體 218‧‧‧Inline diode
300‧‧‧時序圖 300‧‧‧ Timing diagram
302‧‧‧電流波形 302‧‧‧ Current waveform
304‧‧‧電壓波形 304‧‧‧Voltage waveform
306‧‧‧同步整流器導通時間 306‧‧‧Synchronous rectifier on-time
308‧‧‧同步整流器導通波形 308‧‧‧Synchronous rectifier turn-on waveform
310‧‧‧預測閘驅動波形/波形 310‧‧‧Predicted gate drive waveform/waveform
312‧‧‧容許切換窗波形/容許切換窗信號 312‧‧‧ Allowable switching window waveform/allowable switching window signal
314‧‧‧閘驅動信號波形 314‧‧‧ brake drive signal waveform
320‧‧‧第n個導通循環/第n個循環 320‧‧‧nth conduction cycle/nth cycle
322‧‧‧第(n+1)個導通循環/導通循環 322‧‧‧(n+1) conduction cycle/conduction cycle
450‧‧‧時序圖 450‧‧‧ Timing diagram
452‧‧‧波形 452‧‧‧ waveform
560‧‧‧第一組時序圖 560‧‧‧First set of timing diagrams
562‧‧‧第二組時序圖 562‧‧‧Second set of timing diagrams
650‧‧‧時序圖 650‧‧‧ Timing diagram
652‧‧‧時脈波形/波形/時脈信號 652‧‧‧clock waveform/waveform/clock signal
654‧‧‧波形/延遲時間週期 654‧‧‧ Waveform/Delay Time Period
656‧‧‧波形/延遲時間週期 656‧‧‧ Waveform/Delay Time Period
658‧‧‧波形 658‧‧‧ waveform
Cr‧‧‧共振電容器 Cr‧‧‧Resonance Capacitor
CSRT‧‧‧取樣電容器 C SRT ‧‧‧Sampling capacitor
ISD_SR‧‧‧穿過同步整流器切換器之電流 I SD_SR ‧‧‧current through the synchronous rectifier switch
Lr‧‧‧共振電感器 Lr‧‧‧Resonance Inductors
Q1‧‧‧切換器/變頻器切換器 Q1‧‧‧Switcher/Inverter Switcher
Q2‧‧‧切換器/變頻器切換器 Q2‧‧‧Switch/Inverter Switcher
SR_CLK2‧‧‧反相時脈信號 SR_CLK2‧‧‧Inverted clock signal
SR_CND_P‧‧‧同步整流器導通信號 SR_CND_P‧‧‧Synchronous rectifier turn-on signal
SR1‧‧‧整流器切換器/切換器 SR1‧‧‧Rectifier Switcher/Switcher
SR2‧‧‧整流器切換器/切換器 SR2‧‧‧Rectifier Switcher/Switcher
TD‧‧‧空載時間 T D ‧‧‧No-load time
TPD‧‧‧預定空載時間 T PD ‧‧‧ scheduled dead time
VCRST‧‧‧電壓斜升 V CRST ‧‧‧ voltage ramp up
VDS_SR‧‧‧汲極電壓/汲極至源極電壓降 V DS_SR ‧‧‧汲polar voltage / drain to source voltage drop
VIN‧‧‧輸入DC電壓 VIN‧‧‧ input DC voltage
VOUT‧‧‧輸出DC電壓 VOUT‧‧‧ output DC voltage
VPRD‧‧‧預測閘控制信號 V PRD ‧‧‧Predicted gate control signal
圖1圖解說明依照本發明之各種實施例之一共振轉換器系統;圖2圖解說明依照本發明之一項實施例之同步整流器控制電路; 圖3圖解說明依照本發明之一項實施例之各種信號之時序圖;圖4A圖解說明依照本發明之一項實施例之取樣與保持電路;圖4B圖解說明連同圖4A之取樣與保持電路之操作一起之各種信號之時序圖。圖5A圖解說明依照本發明之一項實施例之延遲控制電路;圖5B圖解說明連同圖5A之延遲控制電路之操作一起之各種信號之時序圖。圖6A圖解說明依照本發明之一項實施例之延遲選擇器電路;且圖6B圖解說明連同圖6A之延遲選擇器電路之操作一起之各種信號之時序圖。 1 illustrates a resonant converter system in accordance with various embodiments of the present invention; and FIG. 2 illustrates a synchronous rectifier control circuit in accordance with an embodiment of the present invention; 3 illustrates a timing diagram of various signals in accordance with an embodiment of the present invention; FIG. 4A illustrates a sample and hold circuit in accordance with an embodiment of the present invention; and FIG. 4B illustrates a sample and hold circuit in conjunction with FIG. 4A. A timing diagram of the various signals that operate together. Figure 5A illustrates a delay control circuit in accordance with an embodiment of the present invention; Figure 5B illustrates a timing diagram of various signals along with the operation of the delay control circuit of Figure 5A. 6A illustrates a delay selector circuit in accordance with an embodiment of the present invention; and FIG. 6B illustrates a timing diagram of various signals along with the operation of the delay selector circuit of FIG. 6A.
100‧‧‧共振轉換器系統/轉換器系統/系統/DC/DC轉換器系統 100‧‧‧Resonant Converter System / Converter System / System / DC / DC Converter System
102‧‧‧一次側級/一次側/變頻器級/一次級 102‧‧‧Primary/primary/inverter/primary
104‧‧‧二次側級 104‧‧‧secondary level
106‧‧‧閘控制電路/切換器控制電路 106‧‧‧ gate control circuit / switcher control circuit
108‧‧‧變壓器 108‧‧‧Transformers
110‧‧‧同步整流器(SR)控制電路/控制電路/電路 110‧‧‧Synchronous Rectifier (SR) Control Circuit / Control Circuit / Circuit
112‧‧‧同步整流器(SR)控制電路/控制電路/電路 112‧‧‧Synchronous Rectifier (SR) Control Circuit / Control Circuit / Circuit
Cr‧‧‧共振電容器 Cr‧‧‧Resonance Capacitor
Lr‧‧‧共振電感器 Lr‧‧‧Resonance Inductors
Q1‧‧‧切換器/變頻器切換器 Q1‧‧‧Switcher/Inverter Switcher
Q2‧‧‧切換器/變頻器切換器 Q2‧‧‧Switch/Inverter Switcher
SR_CLK2‧‧‧反相時脈信號 SR_CLK2‧‧‧Inverted clock signal
SR1‧‧‧整流器切換器/切換器 SR1‧‧‧Rectifier Switcher/Switcher
SR2‧‧‧整流器切換器/切換器 SR2‧‧‧Rectifier Switcher/Switcher
VIN‧‧‧輸入DC電壓 VIN‧‧‧ input DC voltage
VOUT‧‧‧輸出DC電壓 VOUT‧‧‧ output DC voltage
Claims (11)
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| TW101116265A TWI538375B (en) | 2012-05-07 | 2012-05-07 | Resonant converter system, method for resonant conversion and method of controlling resonant converter |
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