TWI536495B - A plasma reaction chamber and an electrostatic chuck - Google Patents

Description

Plasma reaction chamber and its electrostatic chuck

The present invention relates to a semiconductor processing process, and more particularly to an electrostatic chuck heating method and system.

In the process of plasma etching or chemical vapor deposition, Electro Static Chuck (ESC) is often used to fix, support and transfer the substrate (Wafer) to the workpiece. The electrostatic chuck is disposed in the reaction chamber, and the electrostatic chucking method is used instead of mechanically fixing the substrate, which can reduce the possible mechanical loss to the substrate and completely contact the electrostatic chuck with the substrate to facilitate heat conduction. .

The existing electrostatic chuck usually comprises an insulating layer and a heating layer, and a DC electrode is arranged in the insulating layer, and the DC electrode is applied with an electrostatic attraction force to the substrate; in order to make the electrostatic chuck have a sufficiently large heating rate, thereby improving the substrate etching Uniformity, a heating layer is arranged under the insulating layer, a heating wire is laid in the heating layer for heating the substrate through the electrostatic chuck; a pedestal is arranged under the heating layer, and a cooling liquid flow channel is arranged on the pedestal, and the cooling is injected The liquid cools the electrostatic chuck.

In the prior art, due to the large area of the electrostatic chuck, it is difficult to ensure the uniformity of the temperature of each region of the electrostatic chuck while the temperature of the electrostatic chuck is rapidly increasing, and the temperature of different regions may have a significant difference or even form a cold zone and The hot zone causes uneven heating of the substrate by the electrostatic chuck, which will adversely affect the process effect of the plasma etching. In order to solve the technical problem of uneven heating of the electrostatic chuck, the prior art proposes a scheme of partitioning the heating layer, and the heating layer is divided into a plurality of independently controlled heating zones to achieve uniform control of the heating zone, however, due to the adjacent heating zone The close contact between the two causes the temperature between adjacent heating zones to interfere with each other, affecting different additions Independent control of temperature between hot zones.

Therefore, while the electrostatic chuck is rapidly heated, the temperature mutual influence between adjacent heating zones is reduced, and an electrostatic chuck having a uniform temperature is provided, which is a technical problem to be solved by the present invention.

The technical means adopted by the present invention to solve the problems of the prior art system provides a plasma reaction chamber and an electrostatic chuck thereof. The plasma reaction chamber includes a reaction chamber, and an electrostatic chuck is disposed under the reaction chamber. a disk and a susceptor supporting the electrostatic chuck, the electrostatic chuck comprising an insulating layer and a heating layer disposed under the insulating layer, the heating layer comprising a first heating zone and a second heating zone, The first heating zone and the second heating zone are respectively provided with independent heating wires, the second heating zone is disposed around the periphery of the first heating zone, the heating wire and the second heating in the first heating zone The heating wires in the zone are located in different planes and are placed upside down.

Further, the heating layer further includes a third heating zone, wherein the heating zone is provided with heating wires, and the heating wires in the adjacent heating zones are located in different planes.

Preferably, an insulating partition is disposed between the adjacent heating zones, and the height of the insulating partition is greater than or equal to zero.

Preferably, the insulating layer and the heating layer are bonded by a silicone layer, and the insulating separator between the adjacent heating zones is a silicone insulating separator, the silicone insulating separator and the insulating layer and The silicone layer between the heating layers is integrally provided.

Preferably, the distance from the end of the insulating spacer to the upper surface of the pedestal is smaller than the distance from the resistance wire in the heating region on both sides of the insulating spacer to the upper surface of the pedestal.

Preferably, the second heating zone is disposed around the first heating zone, the third heating zone is disposed around the second heating zone, and the heating wire of the second heating zone is located near the In the plane of the silicone layer, the heating filaments of the first heating zone and the third heating zone are located in a plane close to the susceptor.

Preferably, the second heating zone is disposed around the first heating zone, the third heating zone is disposed around the second heating zone, and the heating wire of the second heating zone is located near a plane of the susceptor The heating wires of the first heating zone and the third heating zone are located in a plane close to the silicone layer.

Preferably, a temperature measuring element is disposed in each of the heating zones.

Preferably, the plasma reaction chamber is a capacitive coupling type plasma reaction chamber or an inductively coupled plasma reaction chamber.

Another technical means for solving the problems of the prior art is to provide an electrostatic chuck comprising an insulating layer and a heating layer disposed under the insulating layer, the heating layer comprising a first heating zone and a In the two heating zones, the first heating zone and the second heating zone are respectively provided with independent heating wires, and the heating wires in the first heating zone and the heating wires in the second heating zone are located in different planes.

By means of the technical means adopted by the present invention, by providing a plasma reaction chamber and an electrostatic chuck thereof, the heating layer of the electrostatic chuck is divided into two or more heating zones, each heating zone comprising an independent The controlled heating wire increases the distance between adjacent heating wires by arranging the heating wires of the adjacent heating zones in different planes which are vertically offset, and solves the problem that the local temperature of the adjacent heating wires is too high. Moreover, the temperature of the adjacent area is affected, the problem of independent control of different heating zones cannot be realized, and the temperature uniformity of the electrostatic chuck and the independent control temperature between the plurality of heating zones of the electrostatic chuck are improved.

The specific embodiments of the present invention will be further described by the following examples and the accompanying drawings.

100‧‧‧reaction chamber

110‧‧‧Electrostatic chuck

111‧‧‧DC electrode

112‧‧‧Insulation

113‧‧‧矽 glue layer

114‧‧‧heating layer

115‧‧‧Insulation partition

116‧‧‧First heating zone

117‧‧‧second heating zone

118‧‧‧ third heating zone

120‧‧‧ lower electrode

125‧‧‧Cooling runner

126, 127, 128‧‧‧ heating wire

140‧‧‧Upper electrode

160‧‧‧RF power source

200‧‧‧ substrates

1 is a schematic view showing the structure of a plasma reaction chamber of the present invention; FIG. 2 is a schematic view showing the structure of the electrostatic chuck of the present invention and the base thereof; FIG. 3 is a view showing the electrostatic chuck and the lower portion thereof according to another embodiment of the present invention. Schematic diagram of the base structure; FIG. 4 is a schematic view showing the temperature control system of the electrostatic chuck of the present invention.

The specific embodiments of the present invention are further described in detail below with reference to the accompanying drawings.

The technical solution described in the present invention is applicable to a capacitively coupled plasma reaction chamber or an inductively coupled plasma reaction chamber, and other plasma reaction chambers that use an electrostatic chuck to heat the temperature of a substrate to be processed. Illustratively, FIG. 1 is a schematic view showing the structure of a plasma reaction chamber according to the present invention; the plasma reaction chamber is a capacitive coupling type plasma reaction chamber, and those skilled in the art do not perform creative labor through the technical solution disclosed by the present invention. The modifications made are within the scope of the invention.

1 is a schematic view showing the structure of a plasma reaction chamber, comprising a substantially cylindrical reaction chamber 100. The reaction chamber 100 is provided with upper and lower corresponding upper electrodes 140 and lower electrodes 120. The upper electrode 140 is connected to a reaction gas source and serves as a reaction. The gas uniformly enters the distribution plate of the reaction chamber; the lower electrode 120 is connected to the RF power source 160, and serves as a base for supporting the electrostatic chuck, and an electrostatic chuck 110 is disposed above the lower electrode 120. The upper electrode 140 and the lower electrode 120 simultaneously act to dissociate the reaction gas entering the reaction chamber to generate plasma and other active radicals, thereby realizing processing of the substrate.

2 is a schematic view showing the structure of the electrostatic chuck of the present invention and the base therebelow. As shown in FIG. 2, an electrostatic chuck 110 is disposed above the susceptor 120 for carrying the substrate 200. The electrostatic chuck 110 includes an insulating layer 112 and a heating layer 114 disposed above and below, an insulating layer 112 and an additive layer The material of the thermal layer 114 is usually a ceramic material, and the insulating layer 112 and the heating layer 114 are bonded and fixed by an insulating silicone layer 113. A DC electrode 111 is embedded in the insulating layer 112. After the DC electrode 111 is energized, electrostatic attraction is applied to the substrate to fix the substrate 200 above the electrostatic chuck. A heating wire is disposed in the heating layer 114. The heating wire passes through the electrostatic chuck 110 to heat the substrate 200, thereby facilitating the reaction between the substrate and the plasma in the reaction chamber, thereby realizing processing of the substrate; A coolant flow passage 125 is provided which is typically used to inject coolant to cool the electrostatic chuck.

The heating layer 114 of the electrostatic chuck 110 of the present invention includes at least a first heating zone 116 and a second heating zone 117. In this embodiment, a third heating zone 118 is further included, and the second heating zone 117 surrounds the A heating zone 116 is provided, the third heating zone 118 being disposed around the second heating zone 117. The heating wire 126, the heating wire 127 and the heating wire 128 are respectively disposed in the first heating zone 116, the second heating zone 117 and the third heating zone 118, and the heating wires of the different heating zones are independent of each other, thereby achieving independent control of temperature in different heating zones. An insulating partition 115 may be disposed between adjacent heating zones for heat insulation, and the material of the insulating partition 115 may be silicone, thereby better achieving independent control of temperature between different heating zones; although being disposed between different heating zones Silicone insulation separator, because the thickness of the silicone insulation separator 115 is limited, the heating wire between adjacent heating zones will still affect the temperature of the heating zone of each other. If the adjacent heating wires are too close, the heating filaments will be caused. The regional temperature is overheated, the temperature of the heating layer 114 is not uniform, and the temperatures of the different heating zones are not effectively controlled independently. In order to solve the above technical problem, the present invention places the heating wires of the adjacent heating zones in different planes, that is, the heating wires of the adjacent heating zones are staggered up and down, and the distance between the heating wires of the adjacent heating zones is increased as much as possible. Thereby, the temperature increase in the vicinity of the heating wire caused by the too close distance of the heating wire is avoided, and the temperature of the electrostatic chuck is affected to be uniform. In the present embodiment, the heating wire 126 of the first heating zone 116 and the heating wire 128 of the third heating zone 118 are placed in a plane as close as possible to the susceptor 120, and the heating wire 127 of the second heating zone 117 is placed As close as possible to the plane of the insulating layer 112, the distance between the heating wires of the adjacent heating zones is maximized. In another In another embodiment, FIG. 3 is a schematic view showing the structure of the electrostatic chuck and the base below the same according to another embodiment of the present invention; heating of the heating wire 126 and the third heating zone 118 of the first heating zone 116 may also be performed. The wire 128 is placed in a plane as close as possible to the insulating layer 112, and the heating wire 127 of the second heating zone 117 is placed as close as possible to the plane of the susceptor 120.

In this embodiment, the insulating spacer 115 and the insulating layer 112 are disposed integrally with the insulating layer 113 between the heating layer 114. The length of the insulating spacer 115 is less than or equal to the thickness of the heating layer 114, and the length of the insulating spacer 115 is smaller than the heating layer. The thickness of the lower portion of the insulating spacer 115 to the upper surface of the pedestal is less than the distance from the electric resistance wire in the heating region on both sides of the insulating spacer to the upper surface of the pedestal. Thereby achieving better insulation. In another embodiment, the length of the insulating spacer 115 may be zero, that is, no insulating spacer is disposed. In this case, it is necessary to appropriately increase the distance between the heating wires of the adjacent heating regions, thereby avoiding adjacent heating. The temperature difference in the critical region of the interval is too high.

Figure 4 is a schematic view showing the temperature control system of the electrostatic chuck of the present invention. In the embodiment of the present invention, the heating wire of each heating zone is connected to an independent temperature control system (not shown). A temperature measuring component is disposed in each heating zone, and the temperature measuring component is connected to the temperature control system, and the temperature measuring component can monitor the temperature of the heating zone and feed back to the temperature control system, and the temperature control system controls the connection thereof. The temperature of the heating wire is increased or decreased, and a plurality of temperature control systems are connected to each other, and the temperature of the adjacent heating zone measured by the other temperature measuring elements is adjusted to adjust the temperature of the respective heating wires, thereby achieving the purpose of adjusting the temperature of the electrostatic chuck 110.

According to the plasma processing apparatus provided by the above embodiments of the present invention, while the electrostatic chuck is rapidly heated, the temperature uniformity of each region is effectively ensured, so that the temperature of each region of the substrate is uniform, which is favorable for the plasma treatment process. , improve the processing yield of the substrate.

The above description is only for the preferred embodiment of the present invention, and those skilled in the art can make other improvements according to the above description, but these changes still belong to the present invention. The spirit of the invention and the scope of the patents defined below.

111‧‧‧DC electrode

112‧‧‧Insulation

113‧‧‧矽 glue layer

114‧‧‧heating layer

115‧‧‧Insulation partition

116‧‧‧First heating zone

117‧‧‧second heating zone

118‧‧‧ third heating zone

120‧‧‧ lower electrode

125‧‧‧Cooling runner

126, 127, 128‧‧‧ heating wire

Claims (10)

A plasma reaction chamber includes a reaction chamber, an electrostatic chuck and a base supporting the electrostatic chuck are disposed under the reaction chamber, the electrostatic chuck includes an insulating layer and is disposed on the insulating layer a heating layer below, the heating layer comprising a first heating zone and a second heating zone, the second heating zone being disposed around the periphery of the first heating zone, the first heating zone and the second heating zone The heating wires are independent of each other, wherein the heating height of the heating wire in the first heating zone is set at a different plane height from the plane height of the heating wire in the second heating zone. The plasma reaction chamber of claim 1, wherein the heating layer further comprises a third heating zone, wherein the third heating zone is provided with heating wires, and the heating wires in the adjacent heating zones are located in different planes. The plasma reaction chamber according to claim 2, wherein an insulating spacer is disposed between the adjacent heating regions, and the height of the insulating spacer is greater than or equal to zero. The plasma reaction chamber according to claim 3, wherein the insulating layer and the heating layer are bonded by a silicone layer, and the insulating spacer between the adjacent heating regions is a silicone insulating separator. The silicone insulating spacer is integrally provided with the silicone layer between the insulating layer and the heating layer. The plasma reaction chamber of claim 4, wherein a distance from the end of the insulating spacer to the upper surface of the base is smaller than a distance from the resistance wire in the heating region on both sides of the insulating spacer to the upper surface of the base . The plasma reaction chamber of claim 4, wherein the second heating zone is disposed around the first heating zone, the third heating zone is disposed around the second heating zone, and the second heating zone The heating filaments are located in a plane adjacent the silicone layer, and the heating filaments of the first heating zone and the third heating zone are located in a plane adjacent the susceptor. The plasma reaction chamber of claim 4, wherein the second heating zone is disposed around the first heating zone, the third heating zone is disposed around the second heating zone, and the second heating zone The heating wire is located in a plane adjacent to the base, and the heating filaments of the first heating zone and the third heating zone are located in a plane adjacent to the silicone layer. A plasma reaction chamber according to claim 2, wherein a temperature measuring element is disposed in each of the heating zones. A plasma reaction chamber according to any of the preceding claims, wherein the plasma reaction chamber is a capacitively coupled plasma reaction chamber or an inductively coupled plasma reaction chamber. An electrostatic chuck comprising an insulating layer and a heating layer disposed under the insulating layer, the heating layer comprising a first heating zone and a second heating zone, the second heating zone being circumferentially disposed at the first In the periphery of the heating zone, the first heating zone and the second heating zone are respectively provided with independent heating wires, wherein the heating height of the heating wire in the first heating zone is set to the heating wire in the second heating zone. The plane heights set are in different planes.