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TWI535085B - 包含極化層之磁性穿隧接面 - Google Patents

包含極化層之磁性穿隧接面 Download PDF

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TWI535085B
TWI535085B TW101101022A TW101101022A TWI535085B TW I535085 B TWI535085 B TW I535085B TW 101101022 A TW101101022 A TW 101101022A TW 101101022 A TW101101022 A TW 101101022A TW I535085 B TWI535085 B TW I535085B
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李嘉圖 蘇沙
伊恩路遜 普瑞比努
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科羅庫斯科技股份有限公司
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Description

包含極化層之磁性穿隧接面
本揭示內容係關於一用於製造包含極化層之磁性穿隧接面的方法，且欲以具有低振幅之一自旋極化電流寫入。
隨著在室溫下具有強磁阻之磁性穿隧接面的發現，磁性隨機存取記憶體(MRAM)已成為令人重啟興趣的目標。這些MRAM呈現許多優點，例如，速度(幾奈秒的寫入和讀取持續時間)、非依電性(non volatility)及對游離輻射的不靈敏性。因此，其逐漸取代使用以電容器充電狀態為基礎之更為習知之技術的記憶體(DRAM、SRAM、FLASH)。
例如美國專利第5,640,343號所述之一習知的MRAM胞元便是由一磁性穿隧接面組成，該磁性穿隧接面包含一具有一固定磁化向量的第一鐵磁層、一具有在MRAM胞元寫入操作期間可改變之一磁化向量方向的第二鐵磁層、及介於兩個鐵磁層之間的薄絕緣層或穿隧阻障。在MRAM胞元的寫入操作期間，第二鐵磁層的磁化向量可定向為與第一鐵磁層的磁化向量平行或反向平行，其分別導致低或高的磁性接面電阻。
MRAM胞元可使用例如美國專利第5,695,864號中所述之以自旋轉移力矩(STT)方案為基礎之寫入操作進行寫入。以STT為基礎的寫入操作包含使自旋極化電流經由連接至磁性穿隧接面之一電流線通過磁性穿隧接面。與以一外部磁場寫入的MRAM胞元相比，自旋極化電流係與磁性穿隧接面的表面積成反比地增減。以STT為基礎之寫入操作寫入的MRAM胞元或以STT為基礎的MRAM胞元因而有希望用於高密度的MRAM。此外，以STT為基礎的MRAM胞元可比當使用一外部磁場寫入MRAM胞元時進行更快的寫入。
迄今為止，以STT為基礎之MRAM胞元之最實際的實施方式包含所謂的「縱向」構成，其中自旋極化電流的自旋係與第二鐵磁層之磁化向量共線地注入。此典型藉由使用具有面內磁化向量(磁化向量位於鐵磁層平面)或垂直平面之磁化向量的鐵磁材料來達成。
在習知之以STT為基礎的MRAM胞元中，自旋極化電流的注入自旋實質上是平行第二鐵磁層之磁化向量的定向來進行對準。注入自旋施加在第二鐵磁層之磁化向量上的力矩因而實質上為零。
在以STT為基礎的寫入操作期間，寫入速度受限於切換第二鐵磁層之磁化向量的隨機本質。此隨機行為由注入自旋的平行定向決定，而注入自旋之平行定向又由第一鐵磁層或一極化層的磁化向量方向來決定，並與第二鐵磁層之磁化向量的方向相關。第二鐵磁層之磁化向量的切換受到磁化向量之熱活化的觸發；亦即，在第二鐵磁層之磁化向量的熱波動於注入自旋與第二磁化層之此磁化向量間產生一初始角度時。對10 MA/cm2以下範圍內之自旋極化電流而言，或者對100 MA/cm2範圍內之電流而言，切換速度典型受限於約10 ns的切換延遲。
為了能夠以低於1 MA/cm2之電流寫入記憶體胞元，可藉由將一垂直磁化層或一垂直極化器插入磁性穿隧接面來獲得小於10 ns的電流脈衝寬度。甚至是非常短的脈衝寬度，垂直極化器仍會在第一及第二鐵磁層之磁化向量的定向間產生一初始角度。此初始角度最大化初始力矩，從而最小化切換第二鐵磁層之磁化向量所需的臨界自旋極化電流。
在美國專利第6,603,677號中，自旋極化電流的振幅係藉由將一自旋極化層或一合成反鐵磁(SAF)多層加到磁性穿隧接面來使之減少。或者，可減少第二鐵磁層的飽和磁化向量，或可藉由例如提供由MgO製成之穿隧阻障來增加注入自旋極化電流中之電子的自旋極化位準。
為了獲得鄰接MgO穿隧阻障之第一及第二鐵磁層的適當晶體結構，後一層需要以大於300°C(典型包含在340°C和360°C之間)的退火溫度進行退火。典型的垂直極化器係由以鈷/鉑或鈷/鈀或鈷/鎳或稀土/過渡金屬合金為基礎的多層所組成。在磁性穿隧接面包含以MgO為基礎的穿隧阻障且垂直極化器遭受過高退火溫度的情況下，可在多層垂直極化器的介面處發生互混。此外，稀土/過渡合金在這些退火溫度下可為不穩定的。
習知的磁性穿隧接面製造製程包含沈積形成磁性穿隧接面的不同層(包含垂直極化器與以MgO為基礎的穿隧阻障)及執行完整磁性穿隧接面的退火。因此，在相同的磁性穿隧接面中，以MgO為基礎之穿隧阻障的適當退火及垂直極化器的良好性質。因此，要在相同的磁性穿隧接面中同時獲得大磁阻與定義明確的垂直極化器是不可行的。
本揭示內容因而將目標設定為克服這些缺點。
本揭示內容係關於一形成一欲以一自旋極化電流寫入之磁性穿隧接面的方法，該磁性穿隧接面包含一穿隧阻障層，其位於一具有一第一磁化向量之第一鐵磁層及一具有一第二磁化向量之第二鐵磁層之間；及一極化層，其具有一極化磁化向量；該方法包含以下步驟：沈積該第一鐵磁層、該穿隧阻障層及該第二鐵磁層；以一第一預定退火溫度退火該沈積鐵磁層，例如，該磁性穿隧接面之一穿隧磁阻等於或大於約150%；其中該方法可進一步包含沈積該極化器層；及以一第二預定退火溫度退火該沈積的極化器層，該沈積的鐵磁層以該第一預定退火溫度進行之該退火係在沈積該極化器層前執行，且該第二預定退火溫度致使該極化磁化向量定向為實質上垂直於該第一及第二磁化向量。
在一實施例中，該第二預定退火溫度可低於該第一預定退火溫度。
在另一實施例中，該第一預定退火溫度可包含在約340℃和360℃之間。
在另一實施例中，該第二預定退火溫度係包含在約150℃和250℃之間。
在另一實施例中，可以此順序執行沈積該第二鐵磁層、該穿隧阻障層及該第一鐵磁層。
在另一實施例中，以此順序執行沈積該第一鐵磁層、該穿隧阻障層及該第二鐵磁層。
本揭示內容進一步關於一MRAM胞元，其包含藉由此處揭示之方法製成的該磁性穿隧接面。
此處揭示的方法允許製造該磁性穿隧接面，其具有一高穿隧磁阻，並包含具有一垂直極化磁化向量的該極化器層。以此處揭示之方法製成的該磁性穿隧接面可使用具有一低振幅的自旋極化電流進行寫入。
本發明在經由範例給定與藉由第1圖繪示之一實施例的敘述輔助下將更容易了解。
第1圖描繪磁性隨機存取記憶體(MRAM)胞元1，其包含根據一實施例的磁性穿隧接面2。磁性穿隧接面2包含第一鐵磁層21、第二鐵磁層23及位於第一及第二鐵磁層21、23間的絕緣層或穿隧阻障層22。較佳的是第一鐵磁層21具有一固定定向的第一磁化向量211，且第二鐵磁層23具有可自由定向的第二磁化向量231。第一磁化向量211可與一反鐵磁層(未顯示)互換地耦合。
優先地，第一鐵磁層21及第二鐵磁層23係以例如鐵、鈷或鎳或其合金的3d金屬製成。為了獲得非晶形態及平坦介面，最終可將硼加入層組成中。穿隧阻障層22典型由氧化鋁(Al2O3)或氧化鎂(MgO)構成。優先地，第一鐵磁層21可由一合成反鐵磁層(例如，在美國專利第5,583,725號中所述者)組成。
第二磁化向量231可僅在層23的平面中定向。
磁性穿隧接面2進一步包含極化層60及包含在極化層60與第一鐵磁層21之間的金屬分離層61。在本實施例中，極化層60具有垂直極化磁化向量600，亦即，極化層60的極化磁化向量600係定向為實質上垂直於層60的平面或實質上垂直於第一及第二磁化向量211、231。
極化層60可包含以例如Fe/Pt或Fe/Pd或Co/Pt或Co/Pd或Co/Au等或其合金製成或以稀土/過渡金屬合金製成之多層的堆疊。
磁性穿隧接面2可進一步包含一第一導電線路或第一電極50、及一第二導電線路或第二電極51，分別配置在磁性穿隧接面2之極化層60側的一端及配置在磁性穿隧接面2的另一端。MRAM胞元1可進一步包含例如CMOS選擇電晶體3之一切換裝置，其與磁性穿隧接面2的一端電通訊。
在寫入操作期間，使自旋極化電流32以一預定振幅通過磁性穿隧接面2，以致可進行第二磁化向量231的切換。在將極化層60的極化磁化向量600定向為實質上垂直於第一及第二磁化向量211、231時，自旋極化電流32的電子在極化層60中極化為具有與層21、23之平面垂直的自旋方向。自旋極化電流32之經極化的自旋電子導致第二磁化向量231在第二鐵磁層23之平面內的連續旋轉。在此處所揭示的磁性穿隧接面2中，當自旋極化電流32的預定振幅約為1x106 A/cm2或更低時，可進行第二磁化向量231之定向的切換。
根據一實施例，一形成磁性穿隧接面2的方法包含沈積第二電極51、第二鐵磁層23、穿隧阻障層22及第一鐵磁層21。
該方法進一步包含退火沈積的鐵磁層21、23，亦即，例如，以一適於獲得第一及第二鐵磁層21、23之適當晶體結構的第一預定退火溫度退火包含沈積的層51、21、22和23的磁性穿隧接面2。第一預定退火溫度致使在以第一預定退火溫度退火的步驟之後，磁性穿隧接面2的穿隧磁阻為最大，例如，具有約150%或更大的穿隧磁阻值。舉例來說，第一預定退火溫度可大於300℃。在一實施例中，第一預定退火溫度係包含在約340℃和360℃之間。
該方法進一步包含沈積金屬分離層61及極化器層60。
在沈積極化器層60之後，該方法進一步包含退火沈積的極化器層60，亦即，以一第二預定退火溫度退火包含沈積的極化器層60之磁性穿隧接面2。第二預定退火溫度可致使極化器層60的極化磁化向量600定向為實質上垂直於極化器層60的平面或實質上垂直於第一及第二磁化向量211、231。第二預定退火溫度典型低於第一預定退火溫度。舉例來說，第二預定退火溫度係包含在約150℃和250℃之間。
在一實施例中，以此順序執行沈積第一鐵磁層21、穿隧阻障層22及第二鐵磁層23。如此製成之磁性穿隧接面2在極化器層60與第一鐵磁層21之間包含第二鐵磁層23。
在另一實施例中，以此順序執行沈積第二鐵磁層23、穿隧阻障層22及第一鐵磁層21。如此製成之磁性穿隧接面2在極化器層60與第二鐵磁層23之間包含第一鐵磁層21。
只要以第一退火溫度退火沈積的鐵磁層21、23的步驟在沈積極化層60之前執行，則該方法之沈積與退火步驟的其他序列均為可行。
一磁性記憶體裝置(未繪示)可由包含複數個MRAM胞元1之一陣列形成，MRAM胞元1則包含此處揭示的磁性穿隧接面2。
使用此處揭示之方法製成的磁性穿隧接面2允許獲得包含極化器層60的磁性穿隧接面2，極化器層60所具有的極化磁化向量600實質上垂直於極化器層60的平面或實質上垂直於第一及第二磁化向量211、231，且磁性穿隧接面2具有高穿隧磁阻。該方法進一步允許在以高的第一預定退火溫度退火鐵磁層21、23及穿隧阻障層22時，最小化多層極化層60之介面處的互混，並允許高的穿隧磁阻等於或大於150%。
1．．．MRAM胞元
2．．．磁性穿隧接面
3．．．選擇電晶體
21．．．第一鐵磁層
22．．．穿隧阻障層
23．．．第二鐵磁層
32．．．自旋極化電流
50．．．第一導電線路、第一電極
51．．．第二導電線路、第二電極
60．．．極化層
61．．．金屬分離層
211．．．第一磁化向量
231．．．第二磁化向量
600．．．極化磁化向量
第1圖描繪一磁性隨機存取記憶體(MRAM)胞元，其包含根據一實施例之一磁性穿隧接面。
1．．．MRAM胞元
2．．．磁性穿隧接面
3．．．選擇電晶體
21．．．第一鐵磁層
22．．．穿隧阻障層
23．．．第二鐵磁層
32．．．自旋極化電流
50．．．第一導電線路、第一電極
51．．．第二導電線路、第二電極
60．．．極化層
61．．．金屬分離層
211．．．第一磁化向量
231．．．第二磁化向量
600．．．極化磁化向量

Claims (6)

  1. 一種用於製造一欲以一自旋極化電流寫入之磁性穿隧接面的方法，該磁性穿隧接面包含一穿隧阻障層，該穿隧阻障層位於一具有一第一磁化向量之第一鐵磁層及一具有一第二磁化向量之第二鐵磁層之間，該第一磁化向量具有一固定定向，且該第二磁化向量可自由定向；及一極化層，其具有一極化磁化向量；該方法包含以下步驟：沈積該第一鐵磁層、該穿隧阻障層及該第二鐵磁層；以約300℃以上的第一退火溫度退火該沈積的鐵磁層，以致該磁性穿隧接面之一穿隧磁阻等於或大於約150%；沈積該極化器層；及以在約150℃和250℃之間的第二退火溫度，退火該沈積的極化器層，以致該極化磁化向量定向為實質上垂直於該第一及第二磁化向量，以該第一退火溫度進行之退火該沈積的鐵磁層係在沈積該極化器層之前執行。
  2. 如申請專利範圍第1項所述之方法，其中該第一退火溫度係包含在約340℃和360℃之間。
  3. 如申請專利範圍第1項所述之方法，其中係以此順序執行沈積該第二鐵磁層、該穿隧阻障層及該第一鐵磁層。
  4. 如申請專利範圍第1項所述之方法，其中係以此順序 執行沈積該第一鐵磁層、該穿隧阻障層及該第二鐵磁層。
  5. 一種包含一磁性穿隧接面的MRAM胞元，該磁性穿隧接面係藉由如申請專利範圍第1至4項中任一項之方法製造，該MRAM胞元更包含一穿隧阻障層及一極化層，該穿隧阻障層位於一第一鐵磁層及一第二鐵磁層之間，該第一鐵磁層具有一具有一固定定向的第一磁化向量，該第二鐵磁層具有一可自由定向的第二磁化向量，該極化層具有實質上垂直於該第一及第二磁化向量之一極化磁化向量；退火該第一及第二鐵磁層，以致該磁性穿隧接面之一穿隧磁阻等於或大於約150%。
  6. 一種包含複數個MRAM胞元的磁性記憶體裝置，每一MRAM胞元包含一磁性穿隧接面，該磁性穿隧接面係藉由如申請專利範圍第1至4項中任一項之方法製造，該磁性穿隧接面之每一者包含一穿隧阻障層及一極化層，該穿隧阻障層位於一第一鐵磁層及一第二鐵磁層之間，該第一鐵磁層具有一具有一固定定向的第一磁化向量，該第二鐵磁層具有一可自由定向的第二磁化向量，該極化層具有實質上垂直於該第一及第二磁化向量之一極化磁化向量；該第一及第二鐵磁層致使該磁性穿隧接面之一穿隧磁阻等於或大於約150%。
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