TWI533776B - Method for manufacturing substrate for electron amplifier, method for manufacturing electron amplifier and method for manufacturing radiation detector - Google Patents

Description

Method for manufacturing substrate for electronic amplifier, method for manufacturing electronic amplifier, and method for manufacturing radiation detector

The present invention relates to an electronic amplifier for detecting radiation by avalanche amplification of electrons in a gas, and more particularly to a method for manufacturing a substrate for an electronic amplifier for the electronic amplifier, a method for manufacturing the same, and a method for manufacturing the same A method of manufacturing a radiation detector.

Since the past, Gas Electron Multiplier (GEM) has been used for ionizing radiation such as charged particles, gamma rays, X-rays, ultraviolet light or neutrons. The detecting device is configured such that when the radiation to be detected enters the chamber, the gas electron amplifier performs electron amplification caused by the electron avalanche effect to detect the radiation.

In recent years, in particular, the use of neutron technology has attracted attention in many fields. For example, in the structural analysis or functional study of a substance, such as the surface of a substance, an interface or a liquid, an amorphous, a glass, a high-temperature superconductor, etc., structural analysis or functional research corresponding to a state of matter, hydrogen using a polymer of an organic body, hydrated structure The analysis uses the technology of using neutrons in many fields such as the contribution to drug development, and the movement state and function of atoms or molecules in matter.

After the neutron is generated, it is necessary to cause the neutron to collide with the substance to be analyzed. Therefore, a neutron detector is also required along with the neutron generation source. The reason for this is that the position of the neutron collision and the flight time of the neutron can be discriminated by the neutron detector. Based on the desired position determined by the neutron detector Structural analysis of the substance to be analyzed with flight time.

As a neutron detector used here, a detector for a substrate for an electronic amplifier in which copper is coated on both sides of a plate-like member (polymer film) such as a polyimide having a plurality of through holes is known ( For example, refer to Patent Document 1). This type of detector discriminates electrons in an avalanche manner by contacting the neutrons with gases in the device, and by detecting the electrons, discriminates the position of the neutron collision and the time of flight.

On the other hand, as a detector other than the above, the neutron is brought into contact with the scintillator, and the scintillation light generated thereby is transmitted to the wavelength conversion fiber. Then, the transmitted light is converted into electrons by a photoelectric amplifier, and the position of the neutron collision and the time of flight are discriminated by detecting the electron (for example, refer to Patent Documents 2 to 4).

[Advanced technical literature]

[Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open Publication No. 2006-302844

[Patent Document 2] Japanese Patent Laid-Open Publication No. 2005-077235

[Patent Document 3] Japanese Patent Laid-Open Publication No. 2005-200461

[Patent Document 4] Japanese Patent Laid-Open Publication No. 2005-300479

The GEM disclosed in Patent Document 1 is used for X-ray detection, but in order to detect neutrons by GEM, it is required to detect X-rays. Set to high vacuum. Further, in order to efficiently amplify electrons in an avalanche manner, it is necessary to arrange a plurality of plate-like members such as polyimides while maintaining a predetermined gap. However, since the plate-like member such as polyimine is a polymer film, strain is generated when it is in a high vacuum state, and therefore there is a problem that the gap cannot be maintained and the neutron cannot be accurately detected.

Further, in the case of an organic film such as a polymer film, there is also a problem that the electron avalanche is inhibited by the outgas, and thus the problem of neutrons cannot be detected.

Further, the detector presence device in which the scintillator and the optical fiber are combined is disclosed in Patent Documents 2 to 4, and the detection efficiency of the neutron is about 50%, which is very low efficiency.

Accordingly, the present invention has been made to solve the above problems, and provides a method for manufacturing a substrate for an electronic amplifier, a method for manufacturing an electronic amplifier, and a method for manufacturing a radiation detector, which are low-cost and can realize high radiation detection efficiency.

According to a first aspect of the invention, there is provided a substrate for an electron amplifier, wherein the substrate for an electron amplifier is used for a substrate of a radiation detector that performs radiation detection by amplifying electrons in a gas, and includes a substrate. A conductive layer and a through hole formed in a layer on the main surface of the substrate are formed on the substrate, and the manufacturing method includes a precaution step of disposing a conductive layer forming preventing member in which the conductive layer is formed in the through hole. Inside the through hole; a conductive layer forming step of forming the conductive layer on the main surface of the substrate after the preventing step; and a removing step of removing the conductive layer forming preventing member in the through hole after the conductive layer forming step.

According to a second aspect of the invention, in the method of manufacturing the substrate for an electronic amplifier according to the first aspect of the invention, the substrate is a photosensitive glass substrate, and the through hole is formed by irradiating ultraviolet rays.

According to a third aspect of the invention, in the method of manufacturing the substrate for an electronic amplifier according to the first or second aspect, the substrate has a front and back surfaces, and the conductive layer is formed on a front and back surfaces of the substrate.

According to a fourth aspect of the invention, in the method of manufacturing the substrate for an electronic amplifier according to any one of the first aspect to the third aspect, the through hole is formed in plural, each having a circular shape in plan view. And each of the through holes is formed on the substrate at a fixed interval.

According to a fifth aspect of the invention, in the method of manufacturing the substrate for an electronic amplifier according to any one of the first aspect to the fourth aspect, the conductive layer forming preventing member is a thermosetting resin.

According to a sixth aspect of the invention, the method of manufacturing the substrate for an electronic amplifier according to any one of the first aspect to the fifth aspect, wherein the conductive layer comprises: an adhesion layer adhered to the substrate; To cover The metal layer formed by the adhesion layer.

The seventh aspect of the present invention is the method of manufacturing the substrate for an electronic amplifier according to any one of the first to sixth aspects, wherein The adhesion layer is made of chromium, the metal layer is made of copper, and the adhesion layer and the metal layer are continuously formed.

The eighth aspect of the invention is the method for producing a substrate for an electronic amplifier according to any one of the first to seventh aspects, further comprising the step of: after the preventing step and before the step of forming the conductive layer The layer forming prevention member and the substrate are aligned and planarized.

According to a ninth aspect of the invention, there is provided a method for producing a substrate for an electron amplifier, wherein the substrate for electron amplification is formed with a conductive layer which is adhered to a layer of a substrate made of photosensitive glass, and is formed by irradiating ultraviolet rays. The manufacturing method of the present invention includes a preventive step of providing a thermosetting resin that prevents the conductive layer from being formed in the through hole in the through hole, and a conductive layer forming step for preventing the hole After the step, a chromium layer is continuously formed on the main surface of the substrate, and a copper layer is formed to cover the chromium layer to form a conductive layer; and a removing step is performed after the conductive layer forming step to remove the through layer The thermosetting resin in the hole; and the plurality of through holes are formed in a plurality, each of which has a circular shape in plan view, and each of the through holes is formed on the substrate at a fixed interval.

According to a tenth aspect of the invention, there is provided a method of producing an electronic amplifier, comprising: using a substrate for an electron amplifier manufactured by any one of the first to ninth aspects.

According to a eleventh aspect of the present invention, in a method of manufacturing a radiation detector, a substrate for an electron amplifier manufactured by any one of the first to ninth aspects is used.

According to the present invention, low cost can be achieved, and high radiation detection efficiency can be achieved.

Hereinafter, embodiments of the present invention will be described using the drawings.

The present invention is applicable to a radiation detector that performs electron amplification caused by an electron avalanche effect of a gas electron amplifier (hereinafter, also simply referred to as an electron amplifier), and detects charged particles, α rays, β rays, and γ. Radiation rays such as rays, X-rays, ultraviolet rays, or neutrons, and further ultraviolet rays, visible rays, and the like are called radiations such as non-ionizing radiation. Further, in order to solve the above problems, a photosensitive glass is used instead of the polymer film as a substrate of the substrate for an electron amplifier used in the electron amplifier of the radiation detector.

<About photosensitive glass>

A photosensitive glass which is a substrate of a substrate for an electronic amplifier will be described. The photosensitive glass is inexpensive and has excellent workability such as processing capable of achieving wet etching. Further, unlike the polymer film, even when the vacuum state is set, the strain is not generated and the gap can be maintained. Therefore, the electron amplifier used in the electron amplifier used as the radiation detector for detecting the radiation is used. The substrate of the substrate is very effective.

<About substrate for electronic amplifier>

Next, a substrate for an electronic amplifier in which electron amplification by an electron avalanche effect is generated in an electron amplifier and a photosensitive glass is used as a substrate will be described. In order to generate electron amplification caused by the electron avalanche effect in the electron amplifier, it is necessary to form a plurality of through holes in the photosensitive glass to be a substrate.

As shown in FIG. 1, a plurality of through holes 101 formed in the substrate 100, which is a photosensitive glass, have a circular shape when viewed from the substrate 100, and are formed at regular intervals.

Next, a flow of forming a through hole in the photosensitive glass, that is, the substrate 100 will be described with reference to FIG. 2 . First, as shown in FIG. 2(a), the photomask 200 is placed on one main surface of the substrate 100. The photomask 200 is opened only at the through hole forming portion 201 formed on the substrate 100.

After the mask 200 is placed, when the ultraviolet ray is irradiated from the side of the mask 200, the substrate 100 of the through hole forming portion 201 is selectively irradiated with ultraviolet rays. Thereby, as shown in FIG. 2(a), the exposed portion 100a which is a portion to be crystallized is formed on the substrate 100.

Then, the substrate 100 on which the exposed portion 100a is formed is placed in an electric furnace or the like for heat treatment, and the exposed portion 100a is crystallized. By immersing the heat-treated substrate 100 in dilute hydrofluoric acid, only the exposed portion 100a can be etched. Thereby, as shown in FIG. 2(b), only the exposure portion 100a is selectively dissolved and removed, so that the through hole 101 is formed in the substrate 100.

Next, a flow of formation of a substrate for an electron amplifier using a substrate 100 which is a photosensitive glass, will be described with reference to FIG. 3(a) and 3(b) are cross-sectional views showing a state in which one portion of the substrate 100 shown in Fig. 1 is cut by passing through the through hole 101. The front and back surfaces of the substrate 100 in which a plurality of through holes 101 are formed as shown in FIG. 3(a) are formed by continuously sputtering chromium and copper as shown in FIG. 3(b) to form chromium. Layer 41, copper layer 42. Thus, the substrate 40 for an electronic amplifier shown in FIG. 3(b) is formed.

In addition, since the adhesion between the copper layer 42 as the conductive layer and the substrate 100 as the photosensitive glass is low, it is necessary to form a dense layer using chromium which is high in adhesion to the substrate 100 and the copper layer 42. That is, the chrome layer 41. The copper layer 42 is a metal layer with respect to the chromium layer 41 as such a dense layer. In the case where the conductive layer is formed of a metal having high adhesion to the substrate 100, the adhesion layer may not be formed in particular.

As shown in FIG. 3(b), the side wall 101a of the through hole 101 of the substrate 40 for an electron amplifier is in a state in which the chromium layer 41 and the copper layer 42 are formed by sputtering. When a radiation detector for detecting a neutron, for example, in the above-mentioned radiation, is formed by using an electronic amplifier having such a substrate 40 for an electron amplifier, as shown in FIG. 4, it is known that it is a sufficient electron. Magnification, but the expected neutrons cannot be detected.

As a result of intensive research, the inventors have found that the reason why the desired radiation cannot be detected is that the side wall 101a of the plurality of through holes 101 of the substrate 40 for an electronic amplifier shown in Fig. 3(b) is obtained. A chromium layer 41 and a copper layer 42 are formed.

Therefore, the inventors of the present invention have proposed a method for manufacturing an electron amplifier substrate in which the side wall 101a of the through hole 101 of the substrate 100 is not formed with the chromium layer 41 and the copper layer 42. Hereinafter, the method will be described.

<Method of Manufacturing Substrate for Electronic Amplifier of the Invention of the Present Invention>

{First Embodiment: Manufacturing method of resin coating on one side of a substrate}

A method of manufacturing the substrate for an electronic amplifier according to the first embodiment of the present invention will be described with reference to FIG. 5(a) to 5(e) are cross-sectional views showing a state in which the substrate 100 shown in Fig. 1 is cut by X-X lines. Further, as shown in FIG. 1, a plurality of through holes 101 are formed in the substrate 100. However, for convenience of explanation, one through hole 101 will be focused below.

First, a substrate 100 having a through hole 101 and made of photosensitive glass as shown in FIG. 5(a) is prepared. The thickness of the substrate 100 at this time is about 0.5 mm.

Then, as shown in FIG. 5(a), a resin 50 of a predetermined viscosity, for example, a thermosetting resin or the like is applied to the entire single surface of the substrate 100 by a spin coater. The resin 50 is intruded into the through hole 101, and accordingly, the applied resin 50 is cured by heat. Thereby, the resin 50 is plugged in the through hole 101, and becomes a conductive layer formation preventing member which does not form a conductive layer to be described later in the through hole 101.

As shown in FIG. 5(a), since the applied resin 50 flows before a certain temperature, it gradually intrudes into the through hole 101. At this time, the air that has entered the through hole 101 is pressed to the lower side. Thereby, the through hole 101 is in a state of being filled with the resin 50 having no pores (voids). Further, when the resin 50 reaches the lower surface of the through hole 101, the filling is stopped by the surface tension of the resin 50.

Next, as shown in FIG. 5(b), by performing the plasma treatment, only the resin 50 that does not intrude into the through hole 101 when the single surface of the substrate 100 is applied is removed. Thereby, the resin 50 is filled in the through hole 101, and the front and back surfaces of the substrate 100 are in a state in which the photosensitive glass is exposed. Thereafter, the front and back surfaces of the substrate 100 including the through holes 101 filled with the resin 50 as the conductive layer forming preventing member are aligned and planarized. By the planarization treatment, the uniformity of the layer formed by sputtering described later can be maintained.

As described above, in the state where the photosensitive glass on the front and back surfaces of the substrate 100 is exposed, a chromium layer is formed by sputtering chromium, and then copper is continuously sputtered on the front and back surfaces of the substrate 100 to form a copper layer. Thereby, a conductive layer is formed.

However, since the resin 50 is filled in the through hole 101, it is necessary to remove the resin 50. When chromium or copper is directly and continuously sputtered, a conductive layer is also formed on the resin 50 filled in the plurality of through holes 101, and the removal of the resin 50 becomes difficult. Therefore, for example, a stripping process is utilized so that the conductive layer also formed on the resin 50 can be easily removed.

The film-removing process refers to a method in which a metal, a photoresist, or the like is used to form an opposite pattern of a target pattern, and after sputtering a target film, a film of a useless portion is removed together with a metal or a photoresist to leave a target pattern.

For example, a pattern corresponding to a plurality of through holes 101 filled with the resin 50 is formed of a photoresist by the stripping process as described above. Then, chromium or copper is continuously sputtered to form a chromium layer or a copper layer. Thereby, a chromium layer or a copper layer having high adhesion to each other is formed on the front and back surfaces of the photosensitive glass, which is the exposed surface of the substrate 100.

On the other hand, after the chromium layer and the copper layer are formed, the pattern formed by the photoresist is removed, whereby the chromium layer and the copper layer formed on the plurality of through holes 101 filled with the resin 50 are simultaneously removed.

Further, although not shown, the front and back surfaces of the substrate 100 may be covered so that the through holes 101 filled with the resin 50 are opened, and the copper layer and the chromium layer are directly etched to expose the filling. The resin 50 in the through hole 101.

As a result, as shown in FIG. 5(c), a conductive layer formed of the chromium layer 11 and the copper layer 12 is formed only on the front and back surfaces of the substrate 100 of the photosensitive glass filled with the through holes 101 of the resin 50.

Then, the resin 50 as a conductive layer forming preventing member filled in the through hole 101 in which the chromium layer 11 and the copper layer 12 are not formed is removed. As a method of removing the resin 50 filled in the through hole 101, for example, removal by a plasma treatment, removal of an organic solvent and ultrasonic waves, removal of an alkaline chemical and ultrasonic waves, and the like can be considered.

When the resin 50 filled in the through hole 101 is removed as described above, as shown in FIG. 5(d), the chromium layer 11 and the copper layer 12 are not formed on the side wall 101a of the through hole 101, so that the chromium layer 11 and the copper layer can be formed. The layer 12 is formed only on the front and back surfaces of the substrate 100.

Finally, as shown in FIG. 5(e), electrolytic copper plating is performed on the chromium layer 11 and the copper layer 12 formed on the front and back surfaces of the substrate 100 to form an electrolytic copper plating layer 13, thereby forming the electron of the present invention. The substrate 10 for the amplifier.

When the substrate 10 for an electron amplifier formed in the above manner is applied to an electronic amplifier and used in the case of a radiation detector, the radiation can be well detected. In particular, by using the photosensitive glass for the substrate 100, it is possible to satisfactorily detect the radiation that is difficult to detect when the polymer film is used, using the substrate 10 for an electron amplifier using an inexpensive material.

{Second Embodiment: Manufacturing Method of Resin Coating on Both Sides of Substrate}

Next, a method of manufacturing the substrate for an electronic amplifier according to the second embodiment of the present invention will be described with reference to FIG. 6(a) to 6(c) are cross-sectional views showing a state in which the substrate 100 shown in Fig. 1 is cut by X-X lines. Further, as shown in FIG. 1, a plurality of through holes 101 are formed in the substrate 100. However, for convenience of explanation, one through hole 101 will be focused below.

First, a substrate 100 having a through hole 101 and made of photosensitive glass as shown in FIG. 6(a) is prepared. The thickness of the substrate 100 at this time is about 0.5 mm.

Then, as shown in FIG. 6(a), a predetermined viscosity resin 51, 52, for example, a thermosetting resin or the like is applied to the entire front and back surfaces of the substrate 100 by a spin coater. The applied resin 51 and 52 are hardened by heat, whereby the resins 51 and 52 are intruded into the two openings of the through hole 101. Thereby, the resin 51 and 52 block the two openings of the through-holes 101, respectively, and become a conductive layer formation preventing member so that the conductive layer which will be described later is not formed in the through-hole 101.

Next, as shown in FIG. 6(b), when the plasma treatment is performed, only the entire surface of the front and back surfaces of the substrate 100 is removed, and the resins 51 and 52 that do not intrude into the two through holes 101 are not formed. Thereby, the two openings of the through hole 101 are plugged by the resins 51 and 52, and the front and back surfaces of the substrate 100 are in a state in which the photosensitive glass is exposed. Then, the front and back surfaces of the substrate 100 including the through holes 101 plugged by the resins 51 and 52 as the conductive layer forming preventing members are aligned and planarized. By the planarization treatment, the uniformity of the layer formed by sputtering described later can be maintained.

In the following, the method of removing the chrome layer and the copper layer and the method of removing the resin 51 and 52 as the conductive layer forming preventing member can be used in the same manner as in the above-described first embodiment, and thus the description thereof will be omitted.

As a result, as shown in FIG. 6(c), the chromium layer 11 and the copper layer are formed only on the front and back surfaces of the substrate 100 of the photosensitive glass except for the two openings of the through holes 101 covered with the resins 51 and 52. 12 formed conductive layers.

Hereinafter, the method for forming the electrolytic copper plating layer 13 can be the same as that described in the first embodiment with reference to FIGS. 5(d) and 5(e), and thus the description thereof will be omitted.

As described above, by removing the resin that plugs the two openings of the through hole 101 51 and 52, the chromium layer 11 and the copper layer 12 are formed only on the side wall 101a of the through hole 101, as described in Fig. 5(d) of the first embodiment. The front and back of the substrate 100.

The substrate for an electron amplifier formed as described above has the same function as that of the substrate 10 for an electronic amplifier shown in FIG. 5(e) of the first embodiment. When used in an electronic amplifier and used in a radiation detector, The radiation can be well detected. In particular, by using photosensitive glass for the substrate 100, it is possible to satisfactorily detect radiation that is difficult to detect when using a polymer film by using an electronic amplifier substrate using an inexpensive material.

{Third Embodiment: Manufacturing Method of Resin Coating on Through Hole Wall Surface}

Next, a method of manufacturing the substrate for an electronic amplifier according to the third embodiment of the present invention will be described with reference to FIG. 7(a) to 7(c) are cross-sectional views showing a state in which the substrate 100 shown in Fig. 1 is cut by X-X lines. Further, as shown in FIG. 1, a plurality of through holes 101 are formed in the substrate 100. However, for convenience of explanation, one through hole 101 will be focused below.

In the above-described first embodiment and the second embodiment, the resin is filled in the entire plurality of through holes 101 formed in the substrate 100 of the photosensitive glass, and the through holes 101 are completely blocked by the resin. The opening portion is formed to prevent the conductive layer from facing the wall surface of the through hole 101.

On the other hand, the third embodiment proposes that the side wall 101a of the plurality of through holes 101 formed in the substrate 100 does not intrude when the conductive layer is formed on the front and back surfaces of the substrate 100 by sputtering. Degree plus To cover.

First, a substrate 100 having a through hole 101 and formed of photosensitive glass as shown in Fig. 7(a) is prepared. The thickness of the substrate 100 at this time is about 0.5 mm.

Next, as shown in FIG. 7(a), a mask 20 including an opening formed in conformity with the through hole 101 is disposed on the front and back surfaces of the substrate 100. After the mask 20 is placed, the side wall 101a formed in the through hole 101 of the substrate 100 is used as a target material, and the resin 53 and 54 which are the conductive layer formation preventing members are intruded. The method of infiltrating the resin 53 and 54 into the through hole 101 through the mask 20 may be any method. For example, as described in the second embodiment, the resin 53 and 54 of a predetermined viscosity are thermally hardened by a spin coater. The resin or the like is applied to the entire front and back surfaces of the mask 20, respectively.

At this time, as shown in FIG. 7(a), a void may be present, and it is not necessary to completely fill the inside of the through hole 101. Further, as shown in Fig. 7(a), it is not necessary to completely cover the side wall 101a of the through hole 101 by the resins 53 and 54. Specifically, the metal layer 53a may be covered by the resin 53 and 54 so that the metal does not directly adhere to the side wall 101a of the through hole 101 when the conductive layer is formed by sputtering performed in the subsequent stage.

As shown in FIG. 7(b), when the mask 20 is removed, the resins 53 and 54 are adhered only to the side wall 101a of the through hole 101 of the substrate 100. Thereafter, the front and back surfaces of the substrate 100 including the through holes 101 of the resins 53 and 54 which are the conductive layer formation preventing members are aligned and planarized. With this flatness The treatment can maintain the uniformity of the layer formed by sputtering as will be described later.

Next, as shown in FIG. 7(c), chromium and copper are continuously sputtered to form a chromium layer 11 and a copper layer 12. Thereby, the chromium layer 11 and the copper layer 12 having high adhesion to each other are formed on the front and back surfaces of the photosensitive glass, that is, the substrate 100 is exposed. Further, since the side wall 101a of the through hole 101 is protected by the resins 53 and 54 as the conductive layer forming preventing members, the chromium layer 11 and the copper layer 12 are not directly formed.

Thereafter, the resins 53 and 54 are removed by the method described in the first embodiment and the second embodiment. Thereby, the chromium layer 11 and the copper layer 12 formed on the resins 53 and 54 can be simultaneously removed. Therefore, the conductive layer formed of the chromium layer 11 and the copper layer 12 is formed only on the front and back surfaces other than the through hole 101 of the substrate 100.

Hereinafter, the method for forming the electrolytic copper plating layer 13 can be the same as that described in the first embodiment with reference to FIGS. 5(d) and 5(e), and thus the description thereof will be omitted.

As described above, by removing the resins 53 and 54 formed only on the side wall 101a of the through hole 101, the chromium layer 11 and the copper layer 12 are not formed in the same manner as described in Fig. 5(d) of the first embodiment. The side wall 101a of the hole 101 allows the chromium layer 11 and the copper layer 12 to be formed only on the front and back surfaces of the substrate 100.

The substrate for an electron amplifier formed as described above has the same function as that of the substrate 10 for an electronic amplifier shown in FIG. 5(e) of the first embodiment. When used in an electronic amplifier and used in a radiation detector, The radiation can be well detected. In particular, by using photosensitive glass for the substrate 100, it is possible to satisfactorily detect radiation that is difficult to detect when using a polymer film by using an electronic amplifier substrate using an inexpensive material.

<About the material that can be used as a conductive layer>

In the first to third embodiments, the chromium layer is sputtered to form the chromium layer 11 as an adhesion layer, and the copper layer 12 is sputter-plated to form the copper layer 12 as a metal layer, thereby forming a conductive layer. In this case, the chromium layer 11 is continuously formed in the front stage of the formation of the copper layer 12 in consideration of the adhesion between the photosensitive glass and the metal layer.

Of course, it is also possible to directly form an ITO layer as a conductive layer by sputtering ITO (indium tin oxide) having high adhesion to photosensitive glass. In this case, the step of forming the chromium layer 11 as the adhesion layer can be omitted in the prior stage of forming the copper layer 12 as the metal layer, so that the manufacturing process can be shortened.

Further, the conductive layer may be any metal having a high adhesion to the substrate 100 such as ITO, and may be, for example, titanium, tungsten, molybdenum, nickel/copper, electrolytic silver plating, or electrolysis. Metals such as gold plating and electrolytic copper plating.

Furthermore, the technical scope of the present invention is not limited to the above-described embodiments, and various modifications and improvements are also possible within the scope of the specific effects obtained by the configuration of the invention or the combination thereof.

10. . . Substrate for electronic amplifier

11. . . Chrome layer

12. . . Copper layer

13. . . Electrolytic copper plating

20. . . Mask

40. . . Substrate for electronic amplifier

41. . . Chrome layer

42. . . Copper layer

50. . . Resin

51. . . Resin

52. . . Resin

53. . . Resin

54‧‧‧Resin

100‧‧‧Substrate

100a‧‧‧Exposure Department

101‧‧‧through holes

101a‧‧‧ Sidewall

200‧‧‧ mask

201‧‧‧through hole forming parts

X-X‧‧‧ line

Fig. 1 is a view for explaining a substrate made of photosensitive glass used in a substrate for an electron amplifier.

2 is a view for explaining a step of forming a through hole in a substrate made of photosensitive glass.

3 is a view for explaining a procedure of manufacturing a substrate for an electron amplifier by forming a metal film on a substrate on which a through hole is formed.

Fig. 4 is a view showing the detection result of neutrons.

FIG. 5 is a view for explaining a method of manufacturing the substrate for an electronic amplifier according to the first embodiment of the present invention.

FIG. 6 is a view for explaining a method of manufacturing the substrate for an electronic amplifier according to the second embodiment of the present invention.

FIG. 7 is a view for explaining a method of manufacturing a substrate for an electronic amplifier according to a third embodiment of the present invention.

10‧‧‧Substrate for electronic amplifier

11‧‧‧Chromium layer

12‧‧‧ copper layer

13‧‧‧ Electrolytic copper plating

50‧‧‧Resin

100‧‧‧Substrate

101‧‧‧through holes

101a‧‧‧ Sidewall

Claims (11)

A method for producing a substrate for an electron amplifier, wherein the substrate for an electron amplifier is used for a substrate of a radiation detector that performs radiation detection by amplifying electrons in a gas, and includes a layer that is adhered to a main surface of the substrate The conductive layer and the through hole are formed in the substrate, and the manufacturing method includes a precaution step of disposing a conductive layer forming preventing member in which the conductive layer is formed in the through hole in the through hole, and forming a conductive layer. a step of forming the conductive layer on the main surface of the substrate after the preventing step; and a removing step of removing the conductive layer forming preventing member in the through hole after the conductive layer forming step. The method for producing a substrate for an electronic amplifier according to the first aspect of the invention, wherein the substrate is a photosensitive glass substrate, and the through hole is formed by irradiating ultraviolet rays. The method for producing a substrate for an electronic amplifier according to the first or second aspect of the invention, wherein the substrate includes a front and back surfaces, and the conductive layer is formed on a front and back surfaces of the substrate. The method for producing a substrate for an electronic amplifier according to the first aspect of the invention, wherein the through hole is formed in plural, each of which has a circular shape in a plan view. Each of the through holes is formed on the substrate at a fixed interval. The method for producing a substrate for an electronic amplifier according to the first aspect of the invention, wherein the conductive layer forming preventing member is a thermosetting resin. The method for producing a substrate for an electronic amplifier according to the first aspect of the invention, wherein the conductive layer comprises: an adhesion layer adhered to the substrate; and a metal layer formed to cover the adhesion layer. The method for producing a substrate for an electronic amplifier according to claim 6, wherein the adhesion layer is made of chromium, the metal layer is made of copper, and the adhesion layer and the metal layer are continuously formed. The method for producing a substrate for an electronic amplifier according to the first aspect of the invention, further comprising the step of aligning and planarizing the conductive layer forming preventing member and the substrate before the preventing layer step and before the conductive layer forming step. A method for producing a substrate for an electron amplifier, wherein the substrate for an electron amplifier is formed with a conductive layer which is adhered to a layer of a substrate made of photosensitive glass, and a through hole is formed by irradiation of ultraviolet rays, and the manufacturing method is characterized by The present invention includes a precaution step of disposing a thermosetting resin that prevents the conductive layer from being formed in the through hole in the through hole; a conductive layer forming step of forming a chromium layer on the main surface of the substrate after forming the chromium layer on the main surface of the substrate, and continuously forming a copper layer to cover the chromium layer to form a conductive layer; and removing the step After the conductive layer forming step, the thermosetting resin in the through hole is removed; and the through holes are formed in plural, each having a circular shape in plan view, and each of the through holes is formed on the substrate at a fixed interval. A method of manufacturing an electronic amplifier, which is characterized in that the substrate for electronic amplification manufactured by the method of any one of claims 1 to 9 is used. A method of manufacturing a radiation detector, which is characterized by using a substrate for an electron amplifier manufactured by the method of any one of claims 1 to 9.