TWI527619B - Perfluoride treatment device and perfluoride treatment method - Google Patents
Perfluoride treatment device and perfluoride treatment method Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 14
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 title description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 64
- 238000000354 decomposition reaction Methods 0.000 claims description 62
- 239000002253 acid Substances 0.000 claims description 57
- 238000012545 processing Methods 0.000 claims description 55
- 239000007787 solid Substances 0.000 claims description 51
- 238000010438 heat treatment Methods 0.000 claims description 37
- 239000003054 catalyst Substances 0.000 claims description 20
- 239000007788 liquid Substances 0.000 claims description 16
- 239000000126 substance Substances 0.000 claims description 12
- 238000001704 evaporation Methods 0.000 claims description 6
- 230000008020 evaporation Effects 0.000 claims description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 3
- 238000006460 hydrolysis reaction Methods 0.000 claims description 3
- 230000007062 hydrolysis Effects 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 182
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 46
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 46
- 159000000007 calcium salts Chemical class 0.000 description 33
- 239000000047 product Substances 0.000 description 30
- 239000003814 drug Substances 0.000 description 22
- 238000004519 manufacturing process Methods 0.000 description 22
- 239000004065 semiconductor Substances 0.000 description 21
- 229940079593 drug Drugs 0.000 description 17
- 238000006243 chemical reaction Methods 0.000 description 15
- 238000005530 etching Methods 0.000 description 15
- 150000001875 compounds Chemical class 0.000 description 12
- 239000000463 material Substances 0.000 description 11
- 239000000843 powder Substances 0.000 description 11
- 238000001179 sorption measurement Methods 0.000 description 11
- 238000007781 pre-processing Methods 0.000 description 10
- 229910004261 CaF 2 Inorganic materials 0.000 description 7
- 239000010419 fine particle Substances 0.000 description 7
- 239000011575 calcium Substances 0.000 description 6
- 238000011001 backwashing Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000003595 mist Substances 0.000 description 5
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 4
- 238000007599 discharging Methods 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 229910052731 fluorine Inorganic materials 0.000 description 4
- 239000011737 fluorine Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000003513 alkali Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 238000013022 venting Methods 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 2
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 2
- 239000000292 calcium oxide Substances 0.000 description 2
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 2
- 229910002091 carbon monoxide Inorganic materials 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- -1 hafnium halide Chemical class 0.000 description 2
- 230000003301 hydrolyzing effect Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000007257 malfunction Effects 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910000480 nickel oxide Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000002341 toxic gas Substances 0.000 description 2
- 238000010792 warming Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- AXCZMVOFGPJBDE-UHFFFAOYSA-L calcium dihydroxide Chemical compound [OH-].[OH-].[Ca+2] AXCZMVOFGPJBDE-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 239000000920 calcium hydroxide Substances 0.000 description 1
- 229910001861 calcium hydroxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000001784 detoxification Methods 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 239000010436 fluorite Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02C—CAPTURE, STORAGE, SEQUESTRATION OR DISPOSAL OF GREENHOUSE GASES [GHG]
- Y02C20/00—Capture or disposal of greenhouse gases
- Y02C20/30—Capture or disposal of greenhouse gases of perfluorocarbons [PFC], hydrofluorocarbons [HFC] or sulfur hexafluoride [SF6]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P20/00—Technologies relating to chemical industry
- Y02P20/151—Reduction of greenhouse gas [GHG] emissions, e.g. CO2
- Y02P20/155—Perfluorocarbons [PFC]; Hydrofluorocarbons [HFC]; Hydrochlorofluorocarbons [HCFC]; Chlorofluorocarbons [CFC]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Treating Waste Gases (AREA)
- Exhaust Gas Treatment By Means Of Catalyst (AREA)
- Drying Of Semiconductors (AREA)
Description
本發明係關於例如為了將全氟化物分解處理所用的全氟化物之處理裝置等。 The present invention relates to a treatment apparatus for perfluorination or the like which is used, for example, to decompose a perfluorinated product.
例如,在半導體裝置和液晶裝置之製造製程中,為了形成微細圖案而有進行蝕刻和洗淨。此時使用全氟化物的情形居多。又,全氟化物一般多為穩定且對人體無害之物,其他例如使用於冷氣的冷媒用等。 For example, in the manufacturing process of a semiconductor device and a liquid crystal device, etching and cleaning are performed in order to form a fine pattern. At this time, the use of perfluorinated compounds is mostly the case. Further, perfluorinated materials are generally stable and harmless to the human body, and others are used, for example, in cold air.
但是,該等全氟化物當中,一旦釋放到大氣中大多會對地球環境造成嚴重影響。亦即,由於具有在大氣中長期間穩定存在且地球暖化係數大的性質,因此變成地球暖化的原因之一。而且,如上述全氟化物一般為穩定,其影響長期間持續的情形為多。 However, most of these perfluorinated substances, once released into the atmosphere, will have a serious impact on the global environment. In other words, since it has a property of being stably present in the atmosphere for a long period of time and having a large global warming coefficient, it is one of the causes of global warming. Moreover, as described above, the perfluorinated compound is generally stable, and the effect thereof is continued for a long period of time.
因此,為了不對地球環境造成影響,必須將使用過的全氟化物分解,使其成為對地球環境無害的狀態再釋放到大氣中。 Therefore, in order not to affect the global environment, it is necessary to decompose the used perfluorinated material into a state that is harmless to the global environment and then release it into the atmosphere.
專利文獻1揭示有一種含氟化合物的分解處理方法,係將作為鹵素僅含有氟的氟化合物之氣體流,於 水蒸氣存在下與觸媒以約200~800℃接觸,該觸媒係由Al和Ni、Al和Zn、Al和Ti所構成之含有Al的觸媒,氣體流中的氟轉化成氟化氫。 Patent Document 1 discloses a method for decomposing a fluorine-containing compound, which is a gas stream of a fluorine compound containing only fluorine as a halogen. In the presence of water vapor, it is contacted with a catalyst at about 200 to 800 ° C. The catalyst is a catalyst containing Al composed of Al, Ni, Al and Zn, Al and Ti, and fluorine in the gas stream is converted into hydrogen fluoride.
又,專利文獻2揭示有一種全氟化物處理裝置,其特徵在於,具備:全氟化物分解裝置,係設置有觸媒層且供應含有全氟化物的排氣,並分解全氟化物;及酸性物除去裝置,係除去從全氟化物分解裝置排出的排氣所含有的酸性物質和Ca鹽反應所產生的第1反應生成物。 Further, Patent Document 2 discloses a perfluorinated material processing apparatus comprising: a perfluorination decomposition apparatus provided with a catalyst layer, supplying exhaust gas containing perfluorinated substances, and decomposing perfluorinated acid; and acidity The material removal device removes the first reaction product generated by the reaction between the acidic substance contained in the exhaust gas discharged from the perfluorination decomposition apparatus and the Ca salt.
進一步專利文獻3揭示有一種觸媒式PFC分解處理方法,其係至少含有與水反應會產生固態物的氣體成分,且將含有PFC的氣體流中的PFC以觸媒分解之方法,其特徵在於,具有:讓氣體流與水接觸而使固態物產生的固態物生成步驟;除去產生的固態物之固態物捕集步驟;及PFC之觸媒分解步驟。 Further Patent Document 3 discloses a catalytic PFC decomposition treatment method which is characterized in that it contains at least a gas component which reacts with water to generate a solid matter, and a PFC in a PFC-containing gas stream is decomposed by a catalyst, characterized in that And a solid matter generating step of contacting a gas stream with water to cause solid matter; a solid matter trapping step of removing the generated solid matter; and a catalyst decomposition step of the PFC.
[專利文獻1]日本特開2001-224926號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2001-224926
[專利文獻2]日本特開2008-246485號公報 [Patent Document 2] Japanese Patent Laid-Open Publication No. 2008-246485
[專利文獻3]日本特開2005-111423號公報 [Patent Document 3] Japanese Patent Laid-Open Publication No. 2005-111423
在半導體裝置和液晶裝置之製造製程排出的 氣體中,除全氟化物以外還含有固體成分和水接觸而產生固體成分之物質。而且,習知方法,作為分解全氟化物之前的前處理,係使氣體與水或鹼水溶液接觸,以產生如鹵化矽之固體成分的方式除去酸性氣體。但是於該情形,使用用以除去產生的固體成分之過濾器等時,會有水分凝結於過濾器等使得過濾器等容易在短期間即堵塞之問題。 Exhausted in the manufacturing process of the semiconductor device and the liquid crystal device In the gas, in addition to the perfluorinated substance, a substance in which a solid component is brought into contact with water to produce a solid component is contained. Further, the conventional method, as a pretreatment before decomposing the perfluorinated product, removes the acid gas by bringing the gas into contact with water or an aqueous alkali solution to produce a solid component such as hafnium halide. However, in this case, when a filter or the like for removing the generated solid component is used, there is a problem that water or the like is condensed on the filter or the like, so that the filter or the like is likely to be clogged in a short period of time.
本發明係鑑於以往技術具有的上述問題而研發者。 The present invention has been developed in view of the above problems of the prior art.
亦即,本發明之目的在於提供一種全氟化物之處理裝置,作為前處理不需要以含有全氟化物的氣體與水或鹼水溶液接觸而產生固體成分的方式除去酸性氣體的步驟,能避免使用多量的水和排水處理,並且即使在含有全氟化物的氣體中除了全氟化物以外還含有水分,仍使過濾器等不易堵塞。 That is, an object of the present invention is to provide a perfluorinated treatment apparatus which can be used as a pretreatment which does not require a method in which a perfluorinated gas is contacted with water or an aqueous alkali solution to produce a solid component, thereby avoiding use. A large amount of water and drainage treatment, and even if the perfluorinated gas contains moisture in addition to the perfluorinated gas, the filter or the like is less likely to be clogged.
如此地,根據本發明,提供一種全氟化物之處理裝置,其特徵為,具備:前處理手段,係將含有全氟化物的氣體予以前處理;加熱手段,係將含有全氟化物的氣體及水予以加熱,並且藉由預定的觸媒將全氟化物水解而產生含有酸性氣體的分解氣體;熱交換手段,係配設在加熱手段的前段及後段,用以在含有流入該加熱手段前的全氟化物之氣體及水和從該加熱手段流出後的分解氣體之間,進行熱交換;及酸成分除去手段,係從熱交換手段流 出後的分解氣體,將酸成分乾式除去;前處理手段具備:預熱手段,係將含有全氟化物的氣體予以加熱,使含有全氟化物的氣體所含的液體的水蒸發;及固體成分除去手段,係從藉由預熱手段使液體的水蒸發後之含有全氟化物的氣體除去固體成分。 As described above, according to the present invention, there is provided a perfluorinated processing apparatus comprising: a pretreatment means for pretreating a gas containing perfluorinated matter; and a heating means for containing a perfluorinated gas and The water is heated, and the perfluorinated product is hydrolyzed by a predetermined catalyst to generate a decomposition gas containing an acid gas; the heat exchange means is disposed in the front and rear portions of the heating means for containing the inflow before the heating means Heat exchange between the perfluorinated gas and water and the decomposition gas flowing out from the heating means; and the acid component removing means is carried out from the heat exchange means The decomposition gas after the removal removes the acid component in a dry manner; the pretreatment means includes a preheating means for heating the gas containing the perfluorinated product to evaporate the water of the liquid contained in the perfluorinated gas; and the solid component The removal means removes the solid component from the perfluorinated gas obtained by evaporating the liquid water by a preheating means.
此處,較佳為預熱手段係將鰭片配置在含有全氟化物的氣體的流通路徑。而且,較佳為在預熱手段和固體成分除去手段之間導入空氣,使導入空氣後的含有全氟化物的氣體通過該固體成分除去手段。 Here, it is preferable that the preheating means arranges the fins in a flow path of a gas containing perfluorinated matter. Further, it is preferable to introduce air between the preheating means and the solid component removing means, and to pass the perfluorinated gas after introducing the air through the solid component removing means.
又,較佳為熱交換手段係使水混合於流入加熱手段前的含有全氟化物的氣體。 Further, it is preferable that the heat exchange means mix the water with the perfluorinated gas before flowing into the heating means.
進一步,固體成分除去手段較佳為具備用以除去固體成分的第1過濾器、和第2過濾器,該第2過濾器係於進行該第1過濾器的更換時取代該第1過濾器而將固體成分除去。較佳為在含有全氟化物的氣體的流通路徑下游側具備壓縮空氣口,該壓縮空氣口係用以對壓縮空氣進行逆洗。 Further, the solid component removing means preferably includes a first filter for removing solid components and a second filter for replacing the first filter when the first filter is replaced. The solid component is removed. Preferably, a compressed air port is provided on the downstream side of the flow path of the perfluorinated gas, and the compressed air port is used for backwashing the compressed air.
又,根據本發明,提供一種全氟化物之處理方法,其特徵為,具備:前處理步驟,係將含有全氟化物的氣體予以前處理;加熱步驟,係將含有全氟化物的氣體及水予以加熱,並且藉由預定的觸媒將全氟化物水解而產生含有酸性氣體的分解氣體;熱交換步驟,係配設在加熱步驟的前段及後段,用以在流入該加熱步驟前的含有全氟化物的氣體及水和從該加熱步驟流出後的分解氣體之間進 行熱交換;及酸成分除去步驟,係從前述熱交換步驟流出後的分解氣體將酸成分乾式除去;前處理步驟具備:預熱步驟,係將含有全氟化物的氣體加熱,使含有全氟化物的氣體所含的液體的水蒸發;及固體成分除去步驟,係從藉由預熱步驟使液體的水蒸發後的含有全氟化物的氣體除去固體成分。 Further, according to the present invention, there is provided a method for treating a perfluorinated product, comprising: a pretreatment step of pretreating a gas containing perfluorinated matter; and a heating step of supplying a perfluorinated gas and water Heating, and hydrolyzing the perfluorinated product by a predetermined catalyst to generate a decomposition gas containing an acid gas; the heat exchange step is disposed in the front and rear stages of the heating step for containing the full portion before flowing into the heating step Fluoride gas and water and decomposition gas from the heating step And the acid component removing step, wherein the acid component is dry-removed by the decomposition gas flowing out from the heat exchange step; and the pre-treatment step includes: a preheating step of heating the gas containing the perfluorinated product to contain perfluoro The water of the liquid contained in the gas of the compound is evaporated; and the solid component removing step removes the solid component from the perfluorinated gas after the liquid water is evaporated by the preheating step.
前處理手段具備:預熱手段,係將含有全氟化物的氣體加熱,使含有全氟化物的氣體所含的液體的水蒸發;及固體成分除去手段,係從藉由預熱手段使液體的水蒸發後的含有全氟化物的氣體除去固體成分;即使在含有全氟化物的氣體除了全氟化物以外還含有水分,固體成分除去手段亦不易堵塞。 The pretreatment means includes: a preheating means for heating a gas containing a perfluorinated substance to evaporate water of a liquid contained in a perfluorinated gas; and a solid component removing means for causing a liquid by a preheating means The perfluorinated gas after evaporation of water removes solid components; even if the perfluorinated gas contains moisture in addition to the perfluorinated product, the solid component removing means is less likely to clog.
以將鰭片配置在預熱手段的含有全氟化物的氣體之流通路徑之方式,在預熱手段內部攪拌含有全氟化物的氣體,能使熱充分地傳遞到含有全氟化物的氣體。 The gas containing the perfluorinated gas is stirred in the preheating means so that the fins are disposed in the flow path of the perfluorinated gas containing the preheating means, so that the heat can be sufficiently transmitted to the perfluorinated gas.
在預熱手段和固體成分除去手段之間導入空氣,使導入有空氣的含有全氟化物的氣體通過固體成分除去手段,而能在加熱手段抑制一氧化碳的產生,並且也能除去空氣中所含的固體成分。 Air is introduced between the preheating means and the solid component removing means, and the perfluoron-containing gas into which the air is introduced is passed through the solid component removing means, whereby the generation of carbon monoxide can be suppressed by the heating means, and the air contained in the air can be removed. Solid content.
熱交換手段係以使水混合於流入第1加熱手段之前的含有全氟化物的氣體之方式,而能使全氟化物的水解所使用的水更均勻地混合於含有全氟化物的氣體中。 The heat exchange means is such that water mixed with the perfluorinated gas before the first heating means is mixed, and the water used for the hydrolysis of the perfluorinated material can be more uniformly mixed in the perfluorinated gas.
固體成分除去手段具備用以除去固體成分的第1過濾器、和第2過濾器,該第2過濾器係於進行該第1過濾器的更換時取代該第1過濾器而將固體成分除去,藉此,由於在更換第1過濾器時亦能使用第2過濾器,因此能於不停止裝置之運轉下進行更換。 The solid component removing means includes a first filter for removing solid components and a second filter for removing solid components instead of the first filter when the first filter is replaced. Thereby, since the second filter can be used even when the first filter is replaced, it can be replaced without stopping the operation of the apparatus.
固體成分除去手段係以於含有全氟化物的氣體的流通路徑下游側具備壓縮空氣口且該壓縮空氣口係用以對壓縮空氣進行逆洗的方式,使全氟化物之處理不須停止,能繼續運轉,且能延長過濾器等的更換時期。 The solid component removing means is provided with a compressed air port on the downstream side of the flow path of the gas containing the perfluorinated product, and the compressed air port is used for backwashing the compressed air, so that the treatment of the perfluorinated product does not have to be stopped, and It continues to operate and can extend the replacement period of filters and the like.
前處理步驟具備:預熱步驟,係將含有全氟化物的氣體予以加熱,使含有全氟化物的氣體所含的液體的水蒸發;及固體成分除去步驟,係藉由預熱手段從液體的水蒸發後的含有全氟化物的氣體除去固體成分;即使在含有全氟化物的氣體除了全氟化物以外還含有水,固體成分除去手段亦不易堵塞。 The pretreatment step includes: a preheating step of heating the gas containing the perfluorinated product to evaporate the water of the liquid contained in the perfluorinated gas; and removing the solid component from the liquid by the preheating means The perfluorinated gas after evaporation of the water removes the solid component; even if the perfluorinated gas contains water in addition to the perfluorinated product, the solid component removing means is less likely to clog.
1‧‧‧半導體製造設備 1‧‧‧Semiconductor manufacturing equipment
2‧‧‧全氟化物之處理裝置 2‧‧‧Perfluoride treatment unit
3‧‧‧酸洗滌器 3‧‧‧acid scrubber
21‧‧‧前處理單元 21‧‧‧Pre-processing unit
22‧‧‧全氟化物分解單元 22‧‧‧Perfluorinated decomposition unit
23‧‧‧HF吸附單元 23‧‧‧HF adsorption unit
24‧‧‧控制單元 24‧‧‧Control unit
211‧‧‧入口加熱器 211‧‧‧Inlet heater
211b‧‧‧鰭片 211b‧‧‧Fins
212、212a‧‧‧過濾器 212, 212a‧‧‧ filter
212b‧‧‧噴嘴 212b‧‧‧ nozzle
221‧‧‧第1加熱器 221‧‧‧1st heater
222‧‧‧第2加熱器 222‧‧‧2nd heater
231‧‧‧熱交換器 231‧‧‧ heat exchanger
232‧‧‧酸成分除去裝置 232‧‧‧acid component removal device
233‧‧‧噴射器 233‧‧‧Injector
第1圖係適用本實施形態的全氟化物之處理裝置的半導體製造工場的全體構成之說明圖。 Fig. 1 is an explanatory view showing the overall configuration of a semiconductor manufacturing plant to which the perfluorinated material processing apparatus of the present embodiment is applied.
第2圖係本實施形態的全氟化物之處理裝置的概略構成之說明圖。 Fig. 2 is an explanatory view showing a schematic configuration of a perfluorinated material processing apparatus of the present embodiment.
第3圖係構成本實施形態的全氟化物之處理裝置之各機器的示意圖。入口加熱器211的內部構造之說明圖。 Fig. 3 is a schematic view showing the respective devices constituting the perfluorinated processing apparatus of the present embodiment. An explanatory diagram of the internal structure of the inlet heater 211.
第4圖(a)~(b)係入口加熱器的內部構造之說明圖。 Fig. 4 (a) to (b) are explanatory views of the internal structure of the inlet heater.
第5圖係反應溫度和全氟化物的分解率之關係的說明圖。 Fig. 5 is an explanatory diagram showing the relationship between the reaction temperature and the decomposition rate of perfluorinated compound.
第6圖係說明全氟化物之處理裝置的動作之流程圖。 Figure 6 is a flow chart showing the operation of the perfluorinated processing apparatus.
第7圖係從上方看實際製造的全氟化物之處理裝置之圖。 Fig. 7 is a view showing the processing apparatus of the actually manufactured perfluorinated product viewed from above.
第8圖係從第7圖的VII方向看實際製造的全氟化物之處理裝置之圖。 Fig. 8 is a view showing a processing apparatus of a perfluorochemical actually manufactured as seen from the direction of VII of Fig. 7.
以下,詳細說明實施本發明之形態。此外,本發明並不限定於以下實施形態,在其要旨之範圍內可做各種變形實施。又,使用的圖式係用以說明本實施形態,並不代表實際大小。 Hereinafter, the form of carrying out the invention will be described in detail. The present invention is not limited to the following embodiments, and various modifications can be made without departing from the spirit and scope of the invention. Further, the drawings used are for explaining the present embodiment and do not represent actual sizes.
第1圖係適用本實施形態的全氟化物之處理裝置的半導體製造工場的全體構成之說明圖。 Fig. 1 is an explanatory view showing the overall configuration of a semiconductor manufacturing plant to which the perfluorinated material processing apparatus of the present embodiment is applied.
如圖示,本實施形態的半導體製造工場具備:進行半導體之製造的半導體製造設備1、將全氟化物分解處理的全氟化物之處理裝置2、以及進行酸性氣體的捕集之酸洗滌器3。 As shown in the figure, the semiconductor manufacturing facility of the present embodiment includes a semiconductor manufacturing facility for manufacturing a semiconductor, a perfluorination processing device 2 for decomposing a perfluorinated product, and an acid scrubber 3 for collecting acid gas. .
半導體製造設備1通常係成為無塵室,在圖示例中, 具備:蝕刻半導體之矽.多晶矽的P-Si蝕刻器11、蝕刻絕緣膜之氧化矽(SiO2)等氧化膜的氧化膜蝕刻器12、以及為了使用於配線而將金屬膜蝕刻的金屬蝕刻器13。 The semiconductor manufacturing equipment 1 is generally a clean room, and in the illustrated example, an oxide film etching of an oxide film such as a semiconductor wafer, a polycrystalline germanium P-Si etchant 11, and an etched insulating film of cerium oxide (SiO 2 ) is provided. The device 12 and the metal etcher 13 for etching the metal film for use in wiring.
P-Si蝕刻器11、氧化膜蝕刻器12、金屬蝕刻器13係乾式蝕刻(乾蝕刻)裝置,例如是在製程腔室內使用反應性蝕刻氣體進行蝕刻的反應性離子蝕刻(RIE:Reactive Ion Etching)裝置。 The P-Si etcher 11, the oxide film etcher 12, and the metal etcher 13 are dry etching (dry etching) devices, for example, reactive ion etching using a reactive etching gas in a process chamber (RIE: Reactive Ion Etching) ) device.
在P-Si蝕刻器11、氧化膜蝕刻器12、金屬蝕刻器13使用的蝕刻氣體係各自不同,在各裝置進行乾式蝕刻後排氣之氣體含有源起於該蝕刻氣體的各種全氟化物(以下,亦稱為PFC(perfluorocompound))。該全氟化物例示CF4、C2F6、C3F8、C4F8、C5F8、SF6、CHF3等。而且,含有全氟化物的排氣之氣體,亦即蝕刻排氣係以毒性氣體除害裝置14除去氯(Cl2)氣體等有毒氣體後,藉由收集管15排出半導體製造設備1外。本實施形態中,排出半導體製造設備1外的蝕刻排氣,例如在作為載氣的N2(氮)氣體99%含有1%全氟化物等之氣體。本實施形態中,蝕刻排氣所含的全氟化物以1%以下為佳。又,排出的蝕刻排氣的流量例如,3000L/min~3500L/min。 The etching gas systems used in the P-Si etcher 11, the oxide film etcher 12, and the metal etcher 13 are different, and the gas exhausted after dry etching of each device contains various perfluorinated species derived from the etching gas ( Hereinafter, it is also called PFC (perfluorocompound). This Example illustrates perfluorinated CF 4, C 2 F 6, C 3 F 8, C 4 F 8, C 5 F 8, SF 6, CHF 3 and the like. Further, the exhaust gas containing the perfluorinated product, that is, the etched exhaust gas is removed by the toxic gas detoxification device 14 to remove a toxic gas such as chlorine (Cl 2 ) gas, and then discharged to the outside of the semiconductor manufacturing equipment 1 by the collecting pipe 15. In the present embodiment, the etching exhaust gas outside the semiconductor manufacturing equipment 1 is discharged, and for example, 99% of the N 2 (nitrogen) gas as the carrier gas contains a gas such as 1% perfluorinated product. In the present embodiment, the perfluorinated material contained in the etching exhaust gas is preferably 1% or less. Further, the flow rate of the discharged etching exhaust gas is, for example, 3000 L/min to 3500 L/min.
全氟化物之處理裝置2於以下詳述,以分解從半導體製造設備1排出的蝕刻排氣中所含的全氟化物,將全氟化物除害後,作為排氣排出。因此從半導體製造設備1的各設備排出,透過管件收集到的蝕刻排氣係經由三 通閥4導入全氟化物之處理裝置2。全氟化物之處理裝置2不須設置在無塵室內,通常設置在半導體製造設備1的外側。 The perfluorinated processing apparatus 2 decomposes the perfluorinated substance contained in the etching exhaust gas discharged from the semiconductor manufacturing equipment 1 in detail, and removes the perfluorinated substance, and then discharges it as exhaust gas. Therefore, it is discharged from each device of the semiconductor manufacturing equipment 1, and the etched exhaust gas collected through the pipe is passed through three The valve 4 is introduced into the perfluorinated treatment device 2. The perfluorinated processing apparatus 2 does not need to be disposed in a clean room, and is usually disposed outside the semiconductor manufacturing apparatus 1.
酸洗滌器3捕集酸性氣體。而且,將酸性氣體捕集後之無害化的氣體排出半導體製造工場外。酸洗滌器3發揮:即使在全氟化物之處理裝置2無法完全除去全氟化物之情形下,仍能捕集全氟化物之作用。又發揮:即使全氟化物之處理裝置2發生故障等情形,仍能作為全氟化物之處理裝置2的備援之作用。亦即,於通常狀態下,含有全氟化物的氣體係藉由三通閥4導入全氟化物之處理裝置2,藉由全氟化物之處理裝置2分解全氟化物。但是,全氟化物之處理裝置2發生故障等時,切換三通閥4將含有全氟化物的氣體直接導入酸洗滌器3。 The acid scrubber 3 traps acid gases. Further, the harmless gas after the acid gas is collected is discharged outside the semiconductor manufacturing plant. The acid scrubber 3 functions to trap the perfluorinated product even in the case where the perfluorinated processing apparatus 2 cannot completely remove the perfluorinated product. Further, even if the perfluorinated processing apparatus 2 malfunctions, it can function as a backup for the perfluorinated processing apparatus 2. That is, in the normal state, the perfluorochemical-containing gas system is introduced into the perfluorinated treatment device 2 through the three-way valve 4, and the perfluorinated product is decomposed by the perfluorinated treatment device 2. However, when the perfluorinated processing apparatus 2 malfunctions or the like, the three-way valve 4 is switched to directly introduce the perfluorinated gas into the acid scrubber 3.
此外,第1圖中未圖示,亦可在三通閥4的上游側設置捕集從半導體製造設備1排出的蝕刻排氣中所含的酸性氣體之鹼洗滌器。 Further, not shown in the first drawing, an alkali scrubber that traps acid gas contained in the etching exhaust gas discharged from the semiconductor manufacturing equipment 1 may be provided on the upstream side of the three-way valve 4.
以下,進一步進行詳細說明全氟化物之處理裝置2。 Hereinafter, the perfluorinated processing apparatus 2 will be described in further detail.
第2圖係本實施形態的全氟化物之處理裝置2的概略構成之說明圖。 Fig. 2 is an explanatory view showing a schematic configuration of a perfluorinated material processing apparatus 2 of the present embodiment.
如圖示,全氟化物之處理裝置2具備:前處理單元21,係將導入的裝置入口排氣(蝕刻排氣)予以前處理;全氟化物分解單元22,係分解在前處理單元21經前處理 之裝置入口排氣所含的全氟化物;及HF吸附單元23,係以吸附含有在全氟化物分解單元22分解全氟化物時產生的HF(氟化氫)之分解氣體的方式予以乾式除去。而且,藉由該等各單元處理裝置入口排氣進行無害化後,作為排氣排出至全氟化物之處理裝置2外。 As shown in the figure, the perfluorinated processing apparatus 2 includes a pre-processing unit 21 for pre-treating the introduced device inlet exhaust (etching exhaust gas); the perfluorination decomposition unit 22 is decomposed in the pre-processing unit 21 Pretreatment The perfluorinated product contained in the inlet and outlet of the apparatus; and the HF adsorption unit 23 are dry-removed so as to adsorb the decomposition gas containing HF (hydrogen fluoride) generated when the perfluorination unit 22 decomposes the perfluorinated compound. Then, the exhaust gas is detoxified by the inlet of each of the unit processing apparatuses, and then discharged as exhaust gas to the outside of the perfluorinated processing apparatus 2.
第3圖係構成本實施形態的全氟化物之處理裝置2的各機器之示意圖。 Fig. 3 is a schematic view showing the respective devices constituting the perfluorinated processing apparatus 2 of the present embodiment.
如第2圖說明,全氟化物之處理裝置2主要具備:前處理單元21、全氟化物分解單元22、HF吸附單元23。又,如圖示,全氟化物之處理裝置2具備控制單元24,進行全氟化物之處理裝置2所具備的各機器及閥(未圖示)等之控制。 As described in FIG. 2, the perfluorinated processing apparatus 2 mainly includes a pretreatment unit 21, a perfluorination decomposition unit 22, and an HF adsorption unit 23. Further, as shown in the figure, the perfluorinated processing apparatus 2 includes a control unit 24 for controlling each of the devices and valves (not shown) included in the perfluorinated processing apparatus 2.
前處理單元21係將裝置入口排氣進行前處理的前處理手段之一例。前處理單元21具備:進行裝置入口排氣的預熱之入口加熱器211、及進行微粒子的除去之過濾器212、212a。 The pre-processing unit 21 is an example of a pre-processing means for pre-processing the device inlet exhaust. The pretreatment unit 21 includes an inlet heater 211 that performs preheating of the inlet and outlet of the apparatus, and filters 212 and 212a that remove the fine particles.
入口加熱器211係預熱手段之一例,其係將裝置入口排氣加熱,使裝置入口排氣所含的液體的水亦即微小的水滴(霧)蒸發。入口加熱器211係於裝置入口排氣通過的配管之周圍具備加熱器211a。而且,裝置入口排氣係於通過入口加熱器211時藉由加熱器211a加熱,預熱至霧蒸發的溫度。此時預熱的裝置入口排氣的溫度例如可設定為60℃。藉此能在下一過濾器212抑制過濾器被霧堵塞。 The inlet heater 211 is an example of a preheating means for heating the inlet and outlet of the apparatus to evaporate water, that is, fine water droplets (foils) of the liquid contained in the inlet and outlet of the apparatus. The inlet heater 211 is provided with a heater 211a around the pipe through which the exhaust gas of the device passes. Further, the device inlet exhaust is heated by the heater 211a when passing through the inlet heater 211, and is preheated to a temperature at which the mist evaporates. The temperature of the inlet venting of the preheated device at this time can be set, for example, to 60 °C. Thereby, it is possible to suppress the filter from being blocked by the mist at the next filter 212.
第4圖(a)~(b)係入口加熱器211的內 部構造之說明圖。 Figure 4 (a) ~ (b) is the inside of the inlet heater 211 An illustration of the structure of the part.
本實施形態中,入口加熱器211形成圓筒形狀。而且,從圖中上部導入裝置入口排氣。而且,裝置入口排氣朝圖中下方向流通,從圖中下部排出。而且,在入口加熱器211,於裝置入口排氣的流通路徑配置有鰭片211b。 In the present embodiment, the inlet heater 211 is formed in a cylindrical shape. Further, the inlet of the apparatus is introduced from the upper portion of the drawing. Further, the device inlet exhaust gas flows in the lower direction in the drawing and is discharged from the lower portion in the drawing. Further, in the inlet heater 211, a fin 211b is disposed in a flow path of the exhaust gas at the inlet of the device.
第4圖(a)圖示之例係於入口加熱器211配置複數個圓盤狀的鰭片211b。該圓盤狀的鰭片211b係於其中心部的孔部讓保持構件211c貫穿。而且,鰭片211b和保持構件211c係藉由熔接等接合於該孔部。藉此,鰭片211b在圖中上下方向彼此大致平行且以大致等間隔排列成一列。 In the example shown in Fig. 4(a), a plurality of disk-shaped fins 211b are disposed in the inlet heater 211. The disk-shaped fin 211b is inserted into the hole portion of the center portion to allow the holding member 211c to pass therethrough. Further, the fin 211b and the holding member 211c are joined to the hole portion by welding or the like. Thereby, the fins 211b are substantially parallel to each other in the vertical direction in the drawing and are arranged in a line at substantially equal intervals.
又,第4圖(b)圖示之例中,鰭片211b係藉由熔接等而接合於入口加熱器211的內壁。於該情形,鰭片211b係於圖中上下方向彼此大致平行地排列,但於上下方向排列成鋸齒狀。 Moreover, in the example shown in FIG. 4(b), the fin 211b is joined to the inner wall of the inlet heater 211 by welding or the like. In this case, the fins 211b are arranged substantially parallel to each other in the vertical direction in the drawing, but are arranged in a zigzag shape in the vertical direction.
由於設置有這樣的鰭片211b,裝置入口排氣的氣流產生混亂。因此裝置入口排氣在入口加熱器211內部被攪拌,能將藉由加熱器211a產生的熱充分地傳遞至裝置入口排氣。又,特別是第4圖(b)圖示的構造中,藉由加熱器211a產生的熱通過鰭片211b進一步傳熱,因此更容易將裝置入口排氣加熱。進一步以設置鰭片211b的方式,裝置入口排氣接觸到鰭片211b,因而在接觸到的部位亦有因水分凝縮而除去霧的效果。此外,此時凝縮的水分落下至入口加熱器211的下部,會有積存在入口加 熱器211的底部之情形。因此本實施形態中,入口加熱器211的底部設有閥211d。而且,定期打開閥211d,將積存在入口加熱器211下部的水排出。 Due to the provision of such fins 211b, the air flow at the inlet of the device is disturbed. Therefore, the device inlet exhaust gas is stirred inside the inlet heater 211, and the heat generated by the heater 211a can be sufficiently transmitted to the device inlet exhaust gas. Further, in particular, in the configuration illustrated in Fig. 4(b), the heat generated by the heater 211a is further transferred by the fins 211b, so that it is easier to heat the device inlet exhaust. Further, in the manner in which the fins 211b are provided, the device inlet and exhaust are in contact with the fins 211b, and thus the contact portion is also subjected to the effect of removing moisture by condensation of moisture. In addition, at this time, the condensed moisture falls to the lower portion of the inlet heater 211, and there is an accumulation in the inlet plus The case of the bottom of the heater 211. Therefore, in the present embodiment, the bottom of the inlet heater 211 is provided with a valve 211d. Further, the valve 211d is periodically opened to discharge the water accumulated in the lower portion of the inlet heater 211.
返回第3圖,過濾器212係進行從藉由入口加熱器211使霧蒸發後的裝置入口排氣除去作為固體成分的微粒子。半導體製造設備1會產生上述進行乾式蝕刻時消除的氧化矽等微粒子。而且,該微粒子會混入裝置入口排氣,因此藉由過濾器212進行除去。過濾器212只要是讓裝置入口排氣通過並且能捕集微粒子者,則並無限定,例如可使用篩網過濾器等。 Returning to Fig. 3, the filter 212 removes fine particles as solid components from the inlet and outlet of the apparatus after the mist is evaporated by the inlet heater 211. The semiconductor manufacturing equipment 1 generates fine particles such as ruthenium oxide which are eliminated in the above-described dry etching. Moreover, the fine particles are mixed into the inlet vent of the apparatus, and thus are removed by the filter 212. The filter 212 is not limited as long as it allows exhaust gas to pass through the inlet of the apparatus and can collect fine particles. For example, a mesh filter or the like can be used.
又,本實施形態中,除了過濾器212以外還具備過濾器212a作為輔助過濾器,在該過濾器212和過濾器212a之間形成可切換裝置入口排氣的流路。過濾器212a與過濾器212具有同等性能,但比過濾器212小型,能使用的期間短。而且,進行過濾器212的更換等時,取代過濾器212讓裝置入口排氣通過濾器212a,除去固體成分。藉此能進行過濾器212的更換而不使全氟化物之處理裝置2的運轉停止。本實施形態中,藉由第1過濾器過濾器212和第2過濾器過濾器212a構成固體成分除去手段。 Further, in the present embodiment, in addition to the filter 212, a filter 212a is provided as an auxiliary filter, and a flow path for switching the inlet and outlet of the device is formed between the filter 212 and the filter 212a. The filter 212a has the same performance as the filter 212, but is smaller than the filter 212 and has a short period of use. Further, when the filter 212 is replaced or the like, the filter 212 is passed through the filter 212a instead of the filter 212 to remove solid components. Thereby, the replacement of the filter 212 can be performed without stopping the operation of the perfluorinated processing apparatus 2. In the present embodiment, the first filter filter 212 and the second filter filter 212a constitute a solid component removing means.
此外,本實施形態中,在入口加熱器211和過濾器212之間導入空氣。而且,讓導入有空氣的裝置入口排氣通過過濾器212或過濾器212a。在下一全氟化物分解單元22為了抑制一氧化碳的產生,會有需要氧的情 形,因此在此段階讓空氣與裝置入口排氣混合。 Further, in the present embodiment, air is introduced between the inlet heater 211 and the filter 212. Moreover, the inlet of the device into which the air is introduced is exhausted through the filter 212 or the filter 212a. In the next perfluorination unit 22, in order to suppress the production of carbon monoxide, there is a need for oxygen. Shape, so the air is mixed with the device inlet exhaust at this stage.
又,以下將詳述,本實施形態中通過過濾器212後的裝置入口排氣會一次進入熱交換器231。然後,藉由在熱交換器231進行熱交換而將裝置入口排氣加熱。進一步,此時在下一全氟化物分解單元22,為了分解全氟化物,以液體狀態添加在反應中所需要的水。該水在熱交換器231與裝置入口排氣一起被加熱而變成氣體的水蒸氣。而且,邊與裝置入口排氣混合邊移送。本實施形態中,水是使用純水,添加量係與後述反應式相符之量,例如350mL/min。又,該水亦可事先加熱以水蒸氣添加於熱交換器231。 Further, as will be described later in detail, in the present embodiment, the exhaust gas passing through the apparatus 212 after passing through the filter 212 enters the heat exchanger 231 once. Then, the device inlet exhaust gas is heated by heat exchange in the heat exchanger 231. Further, at this time, in the next perfluorination decomposition unit 22, in order to decompose the perfluorinated compound, water required for the reaction is added in a liquid state. This water is heated in the heat exchanger 231 together with the device inlet exhaust gas to become water vapor of the gas. Moreover, it is transferred while being mixed with the exhaust gas of the device inlet. In the present embodiment, pure water is used for the water, and the amount added is in an amount corresponding to the reaction formula described later, for example, 350 mL/min. Further, the water may be added to the heat exchanger 231 by steam in advance.
又,本實施形態中,過濾器212具備噴嘴212b,該噴嘴212b係於裝置入口排氣的流通路徑下游側用以藉由壓縮空氣進行逆洗的壓縮空氣口之一例。而且,以從該噴嘴212b噴射壓縮空氣的方式,除去堆積在過濾器212表面的固體成分。 Further, in the present embodiment, the filter 212 is provided with a nozzle 212b which is an example of a compressed air port for backwashing by compressed air on the downstream side of the flow path of the apparatus inlet exhaust. Further, the solid component deposited on the surface of the filter 212 is removed so that the compressed air is ejected from the nozzle 212b.
本實施形態中,在噴嘴212b連接有供應壓縮空氣的配管,在該配管的途中設置有閥212e。進一步,本實施形態中,設置有檢測裝置入口排氣通過過濾器212之前與後的壓力差之差壓計212c。而且,藉由差壓計212c測量的壓力差到達既定值以上時,打開閥212e,從噴嘴212b噴射壓縮空氣將堆積在過濾器212表面的固體成分除去。此外,該處理也可以自動地進行。亦即,藉由控制單元24等監視差壓計212c測量的壓力差,而且於偵 知藉由差壓計212c測量的壓力差到達既定值以上時,打開閥212e傳送控制訊號而噴射壓縮空氣。又,於該情形,在預定時間後傳送關閉閥212e的控制訊號以停止壓縮空氣的噴射。 In the present embodiment, a pipe for supplying compressed air is connected to the nozzle 212b, and a valve 212e is provided in the middle of the pipe. Further, in the present embodiment, a differential pressure gauge 212c for detecting a pressure difference between the inlet and the outlet of the filter passing through the filter 212 is provided. When the pressure difference measured by the differential pressure gauge 212c reaches a predetermined value or more, the valve 212e is opened, and the compressed air is injected from the nozzle 212b to remove the solid component deposited on the surface of the filter 212. Furthermore, this processing can also be performed automatically. That is, the pressure difference measured by the differential pressure gauge 212c is monitored by the control unit 24 or the like, and When it is known that the pressure difference measured by the differential pressure gauge 212c reaches a predetermined value or more, the valve 212e is opened to transmit a control signal to inject compressed air. Also, in this case, the control signal of the closing valve 212e is transmitted after the predetermined time to stop the injection of the compressed air.
如以上,以進行壓縮空氣噴射並逆洗的方式除去過濾器212的裝置入口排氣導入側的表面之固體成分,能降低壓差。而且,以進行該逆洗的方式不會使全氟化物之處理停止,能繼續運轉且能延長過濾器212的更換時期。 As described above, the solid content of the surface of the filter inlet and the exhaust gas introduction side of the filter 212 is removed by performing compressed air injection and backwashing, and the pressure difference can be reduced. Further, in the manner of performing the backwashing, the treatment of the perfluorinated product is not stopped, the operation can be continued, and the replacement period of the filter 212 can be extended.
全氟化物分解單元22係將裝置入口排氣及水予以加熱,並且藉由預定的觸媒將全氟化物水解產生含有酸性氣體的分解氣體之加熱手段的一例。而且,全氟化物分解單元22具備第1加熱器221和第2加熱器222兩個加熱器。 The perfluorination decomposition unit 22 is an example of a heating means for heating the permeate of the apparatus and water, and hydrolyzing the perfluorinated product by a predetermined catalyst to generate a decomposition gas containing an acid gas. Further, the perfluorination unit 22 includes two heaters, a first heater 221 and a second heater 222.
第1加熱器221係於內部配置有加熱器221a,藉由該加熱器221a將裝置入口排氣、及藉由熱交換器231添加而變成水蒸氣的水予以加熱。通過第1加熱器221之後的裝置入口排氣,例如變成450℃~500℃。本實施形態中,將第1加熱器221設定為裝置入口排氣的流路形成為水平方向的橫型加熱器。 The first heater 221 is internally provided with a heater 221a, and the heater 221a heats the inlet of the apparatus and the water which is added to the water vapor by the heat exchanger 231. The exhaust gas from the apparatus inlet after the first heater 221 is, for example, 450 ° C to 500 ° C. In the present embodiment, the first heater 221 is set such that the flow path of the device inlet exhaust is formed as a horizontal heater in the horizontal direction.
第2加熱器222係從上方導入裝置入口排氣,首先藉由內部具備的加熱器222a將裝置入口排氣及水蒸氣進一步加熱。藉此將裝置入口排氣例如加熱至750℃。 The second heater 222 introduces the exhaust gas from the inlet of the apparatus, and first heats the inlet and the steam of the apparatus by the heater 222a provided therein. Thereby the device inlet venting is heated, for example, to 750 °C.
而且,進一步加熱的裝置入口排氣係於配設在第2加熱器222下方的觸媒層222b,與混合在裝置入口排氣的水(水蒸氣)反應並分解。 Further, the device inlet exhaust gas to be further heated is connected to the catalyst layer 222b disposed under the second heater 222, and reacts with water (water vapor) mixed in the inlet of the device to be decomposed.
作為此時的分解反應,全氟化物係採用CF4、CHF3、C2F6及SF6的情形為例,下述表示反應式。 As a decomposition reaction at this time, a case where perfluorinated compounds are CF 4 , CHF 3 , C 2 F 6 and SF 6 is taken as an example, and the following reaction formula is shown.
CF4+2H2O→CO2+4HF…(1) CF 4 + 2H 2 O → CO 2 + 4HF ... (1)
CHF3+(1/2)O2+H2O→CO2+3HF…(2) CHF 3 +(1/2)O 2 +H 2 O→CO 2 +3HF...(2)
C2F6+3H2O+(1/2)O2→2CO2+6HF…(3) C 2 F 6 +3H 2 O+(1/2)O 2 →2CO 2 +6HF...(3)
SF6+3H2O→SO3+6HF…(4) SF 6 +3H 2 O→SO 3 +6HF...(4)
由上述(1)式~(4)式明瞭,全氟化物係藉由水解反應而變成含有酸成分HF(氟化氫)的分解氣體。又,於該情形下的HF可作為分解氣體所含的酸性氣體而予以捕捉。 It is clear from the above formulas (1) to (4) that the perfluorinated compound is converted into a decomposition gas containing an acid component HF (hydrogen fluoride) by a hydrolysis reaction. Further, HF in this case can be captured as an acid gas contained in the decomposition gas.
第5圖係反應溫度和全氟化物的分解率之關係的說明圖。 Fig. 5 is an explanatory diagram showing the relationship between the reaction temperature and the decomposition rate of perfluorinated compound.
此處,作為蝕刻排氣所含的全氟化物,例示CF4、CHF3、C2F6,C3F8、C4F8、C5F8、SF6、NF3。又,將作為從半導體製造設備1排出的氣體中所含的成分中的不是全氟化物的CO也一併圖示。 Here, as the perfluorinated compound contained in the etching exhaust gas, CF 4 , CHF 3 , C 2 F 6 , C 3 F 8 , C 4 F 8 , C 5 F 8 , SF 6 , and NF 3 are exemplified. Further, CO which is not a perfluorinated component among the components contained in the gas discharged from the semiconductor manufacturing equipment 1 is also collectively shown.
如圖示,任何成分皆在750℃附近變成大致100%的分解率,以使其在750℃之溫度反應,能大致除去全氟化物等。 As shown in the figure, any component has a decomposition rate of approximately 100% at around 750 ° C so that it can react at a temperature of 750 ° C to substantially remove perfluorinated materials.
又,作為構成觸媒層222b的觸媒,本實施形態中,可使用在Al2O3(氧化鋁)含有Zn(鋅)、Ni (鎳)、Ti(鈦)、F(氟)、Sn(錫)、Co(鈷)、Zr(鋯)、Ce(鈰)、Si(矽)等氧化物者。更具體而言,例如可使用Al2O3(氧化鋁)為80重量%、NiO(氧化鎳)為20重量%之組成者。 Further, in the present embodiment, as the catalyst constituting the catalyst layer 222b, Zn (zinc), Ni (nickel), Ti (titanium), F (fluorine), or Sn may be contained in Al 2 O 3 (alumina). (Thin), Co (cobalt), Zr (zirconium), Ce (铈), Si (矽) and other oxides. More specifically, for example, a composition of 80% by weight of Al 2 O 3 (alumina) and 20% by weight of NiO (nickel oxide) can be used.
在第2加熱器222將含有全氟化物分解後的HF之分解氣體,從第2加熱器222的下方排出,傳送到下一HF吸附單元23。此外,此時從第2加熱器222排出的分解氣體之溫度為600℃~700℃左右。 In the second heater 222, the decomposition gas of HF containing the perfluorinated decomposition is discharged from the lower side of the second heater 222 and sent to the next HF adsorption unit 23. Further, at this time, the temperature of the decomposition gas discharged from the second heater 222 is about 600 ° C to 700 ° C.
HF吸附單元23係配設在第1加熱器221和第2加熱器222的前段及後段,且具備:熱交換器231,係於流入第1加熱器221之前的裝置入口排氣和從第2加熱器222流出後的分解氣體之間進行熱交換的熱交換手段之一例;酸成分除去裝置232,係作為從熱交換器231流出後的分解氣體,以使酸成分與鈣鹽反應的方式予以乾式除去的酸成分除去手段之一例;及噴射器233,係作為藉由酸成分除去裝置232將酸成分乾式除去後的排氣排出的排氣排出手段之一例。 The HF adsorption unit 23 is disposed in the front stage and the rear stage of the first heater 221 and the second heater 222, and includes a heat exchanger 231 that is connected to the apparatus inlet before flowing into the first heater 221 and from the second An example of a heat exchange means for exchanging heat between the decomposition gases after the heater 222 has flowed out; the acid component removal device 232 is a decomposition gas that has flowed out of the heat exchanger 231, and reacts the acid component with the calcium salt. An example of the means for removing the acid component by dry removal, and the ejector 233 is an example of an exhaust gas discharge means for discharging the exhaust gas after the acid component is removed by the acid component removing means 232.
又,HF吸附單元23進一步具備:藥劑供應裝置234,係從酸成分除去裝置232的上方供應用以將HF乾式除去的藥劑之鈣鹽的藥劑供應手段之一例;藥劑排出裝置235,係從酸成分除去裝置232的下方將已使用的鈣鹽排出的藥劑排出手段之一例;HF濃度偵測器236,係監視從酸成分除去裝置232排出的氣體中所含的HF濃度;及粉末捕集器237,係配設在HF濃度偵測器 236和噴射器233之間,藉由酸成分除去裝置232除去產生的固體成分。 Further, the HF adsorption unit 23 further includes a drug supply device 234, which is an example of a drug supply means for supplying a calcium salt of a drug for dry removal of HF from above the acid component removal device 232, and a drug discharge device 235 is derived from an acid. An example of a drug discharging means for discharging the used calcium salt below the component removing device 232; the HF concentration detector 236 monitors the concentration of HF contained in the gas discharged from the acid component removing device 232; and the powder trap 237, equipped with HF concentration detector Between the 236 and the ejector 233, the solid component produced is removed by the acid component removing device 232.
熱交換器231係於從第2加熱器222排出後的高溫的分解氣體和導入於第1加熱器221前的前述低溫的裝置入口排氣之間進行熱交換。藉此使分解氣體的溫度降低,並且使導入於第1加熱器221前的裝置入口排氣之溫度上升。又,如前述,熱交換器231使水混合於流入第1加熱器221前的裝置入口排氣。而且,添加在熱交換器231的水蒸發而形成水蒸氣。 The heat exchanger 231 exchanges heat between the high-temperature decomposition gas discharged from the second heater 222 and the low-temperature device inlet exhaust gas before being introduced into the first heater 221. Thereby, the temperature of the decomposition gas is lowered, and the temperature of the inlet and outlet of the apparatus introduced before the first heater 221 is increased. Further, as described above, the heat exchanger 231 mixes the water with the device inlet exhaust gas before flowing into the first heater 221. Further, the water added to the heat exchanger 231 evaporates to form water vapor.
通過熱交換器231後的分解氣體之溫度降低至300℃~500℃左右,而通過熱交換器231後的裝置入口排氣之溫度上升至200℃~300℃左右。 The temperature of the decomposition gas after passing through the heat exchanger 231 is lowered to about 300 ° C to 500 ° C, and the temperature of the exhaust gas passing through the heat exchanger 231 is increased to about 200 ° C to 300 ° C.
作為熱交換器231並無特別限定,可使用:2片板件交替配置,且在該板件間構成流路以進行裝置入口排氣和分解氣體之熱交換的板型熱交換器;及在在殼體(圓筒)和多數支管件(傳熱管)當中分別讓裝置入口排氣和分解氣體通過,在相互間進行熱交換的殼體和管型之熱交換器。又,也可以是雙重管式熱交換器,係設置成雙重管構造,在內管讓高溫的分解氣體流過,在外管讓低溫的裝置入口排氣流過。又,裝置入口排氣和分解氣體可對向流動,亦可並行流動。本實施形態中,使用雙重管式熱交換器使裝置入口排氣和分解氣體相對向並流動。 The heat exchanger 231 is not particularly limited, and a plate type heat exchanger in which two sheets are alternately arranged and a flow path is formed between the plates to exchange heat between the device inlet exhaust gas and the decomposition gas can be used; Among the casing (cylinder) and a plurality of branch pipe members (heat transfer pipes), a casing inlet and a decomposition gas are respectively passed through the casing, and a heat exchanger is exchanged between the casing and the tubular heat exchanger. Further, the double tube heat exchanger may be provided in a double tube structure, and the inner tube allows a high-temperature decomposition gas to flow therethrough, and the outer tube allows a low-temperature device inlet to flow therethrough. Further, the device inlet exhaust gas and the decomposition gas may flow in opposite directions or may flow in parallel. In the present embodiment, the double inlet heat exchanger is used to make the device inlet exhaust gas and the decomposition gas flow in opposite directions.
酸成分除去裝置232係於內部填充由鈣鹽構成的藥劑層232a,分解氣體中所含的HF係以與該鈣鹽進 行吸附反應的方式而乾式除去。作為鈣鹽可使用CaCO3(碳酸鈣)、Ca(OH)2(氫氧化鈣),CaO(氧化鈣)等。又,作為鈣鹽的形狀,可以是粉末狀,但就操作的容易性而言成形為圓柱形狀或球狀等顆粒為佳。本實施形態中,例如使用Ca(OH)2和CaCO3之混合物且採用CaCO3:Ca(OH)2=50重量%~80重量%:20重量%~50重量%者。於該情形之成形性佳,作為顆粒時能抑制粉化。又,本實施形態中,係使用將該混合物做成底面的直徑為3mm左右、高度為8mm左右的圓柱形狀顆粒來使用。 The acid component removing device 232 is filled with a drug layer 232a made of a calcium salt, and the HF contained in the decomposition gas is dry-removed so as to carry out an adsorption reaction with the calcium salt. As the calcium salt, CaCO 3 (calcium carbonate), Ca(OH) 2 (calcium hydroxide), CaO (calcium oxide) or the like can be used. Further, the shape of the calcium salt may be a powder, but it is preferably formed into a cylindrical shape or a spherical shape in terms of ease of handling. In the present embodiment, for example, a mixture of Ca(OH) 2 and CaCO 3 is used, and CaCO 3 : Ca(OH) 2 = 50% by weight to 80% by weight: 20% by weight to 50% by weight is used. In this case, the formability is good, and when it is used as a pellet, pulverization can be suppressed. Further, in the present embodiment, the mixture is used as a cylindrical particle having a diameter of about 3 mm on the bottom surface and a height of about 8 mm.
此時的吸附反應係採用鈣鹽使用CaCO3或Ca(OH)2的情形為例,下述表示反應式。 The adsorption reaction at this time is exemplified by the case where CaCO 3 or Ca(OH) 2 is used as the calcium salt, and the following reaction formula is shown.
CaCO3+2HF→CaF2+CO2+H2O…(5) CaCO 3 +2HF→CaF 2 +CO 2 +H 2 O...(5)
Ca(OH)2+2HF→CaF2+2H2O…(6) Ca(OH) 2 +2HF→CaF 2 +2H 2 O...(6)
從上述(5)式~(6)式可明瞭,HF係與鈣鹽反應而產生CaF2(氟化鈣(螢光石))、CO2(二氧化碳)及H2O(水)。 From the above formulas (5) to (6), it is understood that the HF system reacts with a calcium salt to produce CaF 2 (calcium fluoride (fluorite), CO 2 (carbon dioxide), and H 2 O (water).
在噴射器233連接有讓壓縮空氣流入的壓縮空氣配管,藉由將該壓縮空氣以高速流動所產生的負壓,吸引排氣且與壓縮空氣一起排出至全氟化物之處理裝置2外。藉此,排氣進一步溫度降低並排出。從酸成分除去裝置232排出後的排氣,例如為200℃左右,從噴射器233排出的排氣例如為100℃以下。 A compressed air pipe through which compressed air flows in is connected to the ejector 233, and the exhaust gas is sucked by the negative pressure generated by the compressed air at a high speed, and is discharged together with the compressed air to the outside of the perfluorinated processing apparatus 2. Thereby, the exhaust gas is further lowered in temperature and discharged. The exhaust gas discharged from the acid component removing device 232 is, for example, about 200 ° C, and the exhaust gas discharged from the ejector 233 is, for example, 100 ° C or lower.
又,分解氣體係從酸成分除去裝置232的下 方導入,並且從酸成分除去裝置232的上方排出。而且,分解氣體係從酸成分除去裝置232的下方朝上方流動期間,產生與上述(5)式~(6)式例示之HF和鈣鹽之反應,而將HF乾式除去。此時,鈣鹽變成CaF2,由於未產生更大的反應,必須進行順序更換。 Further, the decomposition gas system is introduced from below the acid component removing device 232, and is discharged from above the acid component removing device 232. Further, during the period in which the decomposition gas system flows upward from the lower side of the acid component removing device 232, a reaction with HF and a calcium salt exemplified in the above formulas (5) to (6) is generated, and HF is dry-removed. In this case, the calcium salt into CaF 2, since the reaction is not greater, the sequence must be replaced.
因此本實施形態中,設置有:將鈣鹽供應至酸成分除去裝置232的藥劑供應裝置234、及將已使用的鈣鹽從酸成分除去裝置232排出的藥劑排出裝置235。 Therefore, in the present embodiment, the drug supply device 234 that supplies the calcium salt to the acid component removal device 232 and the drug discharge device 235 that discharges the used calcium salt from the acid component removal device 232 are provided.
本實施形態中,藉由HF濃度偵測器236監視HF之濃度,HF之濃度為例如到達100ppm時,判斷為鈣鹽的更換時期。而且,進行設置在藥劑排出裝置235的輥子閥(未圖示)等之開閉,排出既定量的已使用之鈣鹽。又,排出已使用的鈣鹽後,進行朝向藥劑供應裝置234的輥子閥(未圖示)等之開閉,供應排出份量的新鈣鹽。如此地,順序更換藥劑排出裝置235內的鈣鹽。此外,控制單元24取得關於來自HF濃度偵測器236的HF濃度之資訊,而且HF濃度例如到達100ppm時,以進行設置在藥劑供應裝置234或藥劑排出裝置235的輥子閥之開閉控制的方式自動地進行該一連串的程序。又,此時鈣鹽可全部更換,但通常進行僅更換一部分。作為鈣鹽的更換量例如40kg/h。 In the present embodiment, the concentration of HF is monitored by the HF concentration detector 236, and when the concentration of HF reaches, for example, 100 ppm, it is determined that the calcium salt is replaced. Further, opening and closing of a roller valve (not shown) or the like provided in the medicine discharge device 235 is performed, and a predetermined amount of used calcium salt is discharged. Further, after the used calcium salt is discharged, opening and closing of a roller valve (not shown) or the like to the drug supply device 234 is performed, and a new amount of calcium salt is dispensed. In this manner, the calcium salts in the drug discharge device 235 are sequentially replaced. Further, the control unit 24 acquires information on the HF concentration from the HF concentration detector 236, and when the HF concentration reaches, for example, 100 ppm, the automatic setting of the roller valve of the medicine supply device 234 or the medicine discharge device 235 is automatically performed. Perform this series of procedures. Further, at this time, the calcium salt can be completely replaced, but usually only a part of it is replaced. The amount of replacement of the calcium salt is, for example, 40 kg/h.
粉末捕集器237係為了鈣鹽更換時等用以除去酸成分除去裝置232產生的鈣鹽之粉末等而設置。作為粉末捕集器237,可使用金屬篩網過濾器等。 The powder trap 237 is provided to remove the powder of the calcium salt generated by the acid component removing device 232 or the like in the case of replacement of the calcium salt. As the powder trap 237, a metal mesh filter or the like can be used.
第6圖係說明全氟化物之處理裝置2的動作之流程圖。 Fig. 6 is a flow chart showing the operation of the perfluorinated processing apparatus 2.
以下,使用第5圖及第6圖進行全氟化物之處理裝置2的動作之說明。 Hereinafter, the operation of the perfluorinated processing apparatus 2 will be described using FIGS. 5 and 6.
首先,裝置入口排氣通過前處理單元21的入口加熱器211且進行預熱(步驟101)。藉此將裝置入口排氣中所含的霧蒸發。 First, the device inlet exhaust gas passes through the inlet heater 211 of the pre-processing unit 21 and is preheated (step 101). Thereby, the mist contained in the exhaust gas of the apparatus inlet is evaporated.
接著,在已預熱的裝置入口排氣導入空氣,藉由前處理單元21的過濾器212除去微粒子(步驟102)。 Next, air is introduced into the exhaust gas at the inlet of the preheated device, and the particles are removed by the filter 212 of the pretreatment unit 21 (step 102).
此時,判斷是否必須更換過濾器212(步驟103)。而且,於必須更換過濾器212時(步驟103的Yes),將裝置入口排氣的流路切換到輔助過濾器過濾器212a側(步驟104)。而且,進行更換過濾器212的作業(步驟105)。 At this time, it is judged whether or not the filter 212 has to be replaced (step 103). Further, when it is necessary to replace the filter 212 (Yes in step 103), the flow path of the device inlet exhaust gas is switched to the auxiliary filter filter 212a side (step 104). Further, an operation of replacing the filter 212 is performed (step 105).
更換過濾器212的作業結束時,將裝置入口排氣的流路切換到原來的過濾器之過濾器212側(步驟106)。 When the operation of replacing the filter 212 is completed, the flow path of the device inlet exhaust gas is switched to the filter 212 side of the original filter (step 106).
另一方面,於不須更換過濾器212時(步驟103的No),前進到下一步驟107。此外,判斷是否必須更換過濾器212,可在前回過濾器212更換後使全氟化物之處理裝置2動作的時間判斷,或以目視等判斷。 On the other hand, when it is not necessary to replace the filter 212 (No in step 103), the process proceeds to the next step 107. Further, it is determined whether or not the filter 212 has to be replaced, and the time during which the perfluorinated processing device 2 is operated after the replacement of the front filter 212 can be judged or visually judged.
接著,裝置入口排氣係藉由熱交換器231進行熱交換而加熱(步驟107)。又,此時在全氟化物的分 解反應添加必要的水(步驟108)。 Next, the device inlet exhaust system is heated by heat exchange by the heat exchanger 231 (step 107). Also, at this time, the fraction of perfluorinated The reaction is added to add the necessary water (step 108).
通過熱交換器231的裝置入口排氣係藉由第1加熱器221首先被加熱(步驟109),進而藉由第2加熱器222進一步加熱至全氟化物的分解所必需之溫度(步驟110)。而且,通過第2加熱器222的觸媒層222b時全氟化物分解,裝置入口排氣變成含HF之分解氣體(步驟111)。 The exhaust gas passing through the apparatus inlet of the heat exchanger 231 is first heated by the first heater 221 (step 109), and further heated by the second heater 222 to a temperature necessary for decomposition of the perfluorinated product (step 110). . Further, when the catalyst layer 222b of the second heater 222 is decomposed, the perfluorination is decomposed, and the device inlet exhaust gas becomes a decomposition gas containing HF (step 111).
分解氣體再度進入熱交換器231,在與前述裝置入口排氣之間進行熱交換(步驟112)。 The decomposed gas enters the heat exchanger 231 again, and performs heat exchange with the inlet exhaust of the apparatus (step 112).
而且,分解氣體係於酸成分除去裝置232與鈣鹽反應而將HF乾式除去(步驟113)。又,此時控制單元24判斷藉由HF濃度偵測器236取得的HF濃度是否到達既定值以上(步驟114)。而且,到達既定值以上時(步驟114的Yes),使藥劑排出裝置235和藥劑供應裝置234動作,進行鈣鹽的更換(步驟115)。又,未達既定值時(步驟114的No)不進行鈣鹽的更換,前進到下一步驟116。 Further, the decomposition gas system is reacted with the calcium salt by the acid component removing device 232 to dryly remove the HF (step 113). Further, at this time, the control unit 24 determines whether or not the HF concentration acquired by the HF concentration detector 236 has reached a predetermined value or more (step 114). When the predetermined value or more is reached (Yes in step 114), the medicine discharge device 235 and the medicine supply device 234 are operated to replace the calcium salt (step 115). Moreover, when the predetermined value is not reached (No in step 114), the replacement of the calcium salt is not performed, and the process proceeds to the next step 116.
將HF乾式除去後的排氣係藉由粉末捕集器237除去粉末後(步驟116),藉由噴射器233將全氟化物之處理裝置2外排出(步驟117)。 The exhaust gas after the HF dry removal is removed by the powder trap 237 (step 116), and the perfluorinated processing apparatus 2 is discharged by the ejector 233 (step 117).
以上詳述之全氟化物之處理裝置2具有以下特徵。 The perfluorinated processing apparatus 2 detailed above has the following features.
(i)由於利用觸媒層222b進行全氟化物的分解,能處理大量的蝕刻排氣且能減少運轉成本。 (i) Since the perfluorination is decomposed by the catalyst layer 222b, a large amount of etching exhaust gas can be processed and the running cost can be reduced.
(ii)以藉由使分解氣體中所含的HF與鈣鹽之吸附反應而乾式除去的方式,相較於以往將HF溶解於水來除去HF的方法,不會產生含HF的排水。又,吸附反應後產生的CaF2無害並且操作容易。進一步,由於CaF2為製造HF的原料,其係有價物。亦即,能從對地球環境有害的蝕刻排氣製造有價物CaF2。 (ii) A method of removing HF by dissolving HF in water to remove HF by a method in which HF and a calcium salt contained in the decomposition gas are reacted by dry reaction, and HF-containing drainage is not generated. Further, CaF 2 produced after the adsorption reaction is harmless and easy to handle. Further, since CaF 2 is a raw material for producing HF, it is a valuable substance. That is, the valuable substance CaF 2 can be produced from an etched exhaust gas which is harmful to the global environment.
(iii)以藉由熱交換器231在裝置入口排氣和分解氣體之間進行熱交換的方式,能提升能源利用效率。又,相較於將以往的分解氣體藉由水冷卻的方式,不會產生排水。因此不需要排水處理步驟而能減少全氟化物之處理裝置2的運轉成本。 (iii) The energy utilization efficiency can be improved by heat exchange between the device inlet exhaust gas and the decomposition gas by the heat exchanger 231. Moreover, drainage is not generated as compared with the case where the conventional decomposition gas is cooled by water. Therefore, the operation cost of the perfluorinated processing apparatus 2 can be reduced without requiring a drain treatment step.
(iv)將配設在酸成分除去裝置232上方的藥劑供應裝置234和在下方具有藥劑排出裝置235的藥劑層232a組裝,則只要打開閥即能利用重力投入,藉由如此簡便的系統即能進行鈣鹽的更換。又,本實施形態中,將分解氣體從下方導入,從上方排氣,並且設置有HF濃度偵測器236,以監視HF濃度的方式進行鈣鹽的更換時期之判斷。藉此使藥劑層232a的上層部不排出,僅下層部的已反應之鈣鹽排出,因此幾乎不產生未反應的鈣鹽,能減少鈣鹽多餘的消費量。 (iv) The drug supply device 234 disposed above the acid component removing device 232 and the drug layer 232a having the drug discharging device 235 disposed below are assembled, and the gravity can be used by opening the valve, and the system can be easily installed by such a simple system. Replace the calcium salt. In the present embodiment, the decomposition gas is introduced from below, and is exhausted from above, and the HF concentration detector 236 is provided to determine the replacement period of the calcium salt so as to monitor the HF concentration. Thereby, the upper layer portion of the drug layer 232a is not discharged, and only the reacted calcium salt in the lower layer portion is discharged. Therefore, almost no unreacted calcium salt is generated, and the excessive consumption of calcium salt can be reduced.
(v)作為前處理單元21,以具備入口加熱器211、過濾器212及212a的方式,能避免在前處理步驟中使用多量的水和排水處理。此外,在裝置入口排氣中含有酸性氣體的情形,由於本實施形態中存在有酸成分除去裝置 232,因此將酸性氣體排出至裝置外部的情形少。 (v) As the pre-processing unit 21, the inlet heater 211, the filters 212 and 212a are provided, so that a large amount of water and drainage treatment can be avoided in the pre-processing step. Further, in the case where the acid gas is contained in the exhaust gas at the inlet of the device, the acid component removing device is present in the present embodiment. 232, therefore, there are few cases where acid gas is discharged to the outside of the device.
第7圖係從上方看實際製造的全氟化物之處理裝置2之圖。又,第8圖係從第7圖的VII方向觀察實際製造的全氟化物之處理裝置2之圖。亦即,第8圖係從水平方向觀察全氟化物之處理裝置2之圖。 Fig. 7 is a view of the actually processed perfluorinated processing apparatus 2 as seen from above. Further, Fig. 8 is a view showing the actually processed perfluorinated processing apparatus 2 viewed from the VII direction of Fig. 7. That is, Fig. 8 is a view showing the treatment apparatus 2 of the perfluorinated product from the horizontal direction.
如圖示,實際的全氟化物之處理裝置2無論從上方觀察的情形或從水平方向觀察到的情形,皆於矩形區域的內部配置大致全部的機器。此外,控制單元24係配置在矩形區域的外部。此外,本實施形態中的矩形係長方形為基本形,但接近於長方形的梯型或平行四邊形或橢圓形等,亦只要不脫離本實施形態的特徵範圍,可包含矩形。 As shown in the figure, the actual perfluorinated processing apparatus 2 is disposed in substantially all of the inside of the rectangular region, regardless of the situation as viewed from above or from the horizontal direction. Further, the control unit 24 is disposed outside the rectangular area. Further, the rectangular rectangle in the present embodiment has a basic shape, but is similar to a rectangular ladder shape, a parallelogram shape, an elliptical shape, or the like, and may include a rectangular shape as long as it does not deviate from the characteristic range of the embodiment.
接著,進行第7圖及第8圖中的全氟化物之處理裝置2的各機器之說明。以下,從上方觀察設置有控制單元24的位置時,進行說明全氟化物之處理裝置2的左下側。 Next, description will be given of each device of the perfluorinated processing apparatus 2 in FIGS. 7 and 8. Hereinafter, when the position where the control unit 24 is provided is viewed from above, the lower left side of the processing device 2 for the perfluorinated product will be described.
裝置入口排氣被導入全氟化物之處理裝置2的左下側的導入口In。而且,如第8圖所示朝箭頭A1方向流動,通過設置在全氟化物之處理裝置2的下側之入口加熱器211。而且,藉由此時配設在入口加熱器211的加熱器211a(參照第3圖)進行預熱。藉此將裝置入口排氣所含的霧蒸發。 The inlet vent of the apparatus is introduced into the inlet port In on the lower left side of the perfluorinated processing apparatus 2. Further, as shown in Fig. 8, it flows in the direction of the arrow A1 and passes through the inlet heater 211 provided on the lower side of the perfluorinated processing apparatus 2. Then, the heater 211a (see FIG. 3) disposed in the inlet heater 211 is preheated. Thereby, the mist contained in the exhaust gas of the device inlet is evaporated.
通過入口加熱器211的裝置入口排氣,通常 是經由複數支配管而沿著箭頭A2方向及箭頭A3方向流動,再導入過濾器212。而且,以過濾器212將裝置入口排氣中所含的微粒子除去。進一步,通過過濾器212後的裝置入口排氣係朝箭頭A4方向流動,朝向熱交換器231。 Venting through the inlet of the inlet heater 211, usually The flow is performed in the direction of the arrow A2 and the direction of the arrow A3 via a plurality of branch pipes, and is introduced into the filter 212. Further, the fine particles contained in the exhaust gas of the apparatus inlet are removed by the filter 212. Further, the device inlet exhaust system passing through the filter 212 flows in the direction of the arrow A4 toward the heat exchanger 231.
但是,更換過濾器212時,在切換部K的部位切換裝置入口排氣的流路。而且,從切換部K沿著箭頭A5方向流動,導入過濾器212a。而且,以過濾器212a將裝置入口排氣中所含的微粒子除去。進一步,通過過濾器212a後的裝置入口排氣係朝箭頭A6方向流動,朝向熱交換器231。 However, when the filter 212 is replaced, the flow path of the inlet of the apparatus is switched at the portion of the switching unit K. Then, the switching portion K flows in the direction of the arrow A5, and the filter 212a is introduced. Further, the fine particles contained in the exhaust gas of the apparatus inlet are removed by the filter 212a. Further, the device inlet exhaust system passing through the filter 212a flows in the direction of the arrow A6 toward the heat exchanger 231.
此外,雖然沒有圖示,但在緊鄰於切換部K,於通過入口加熱器211後的裝置入口排氣中導入空氣。 Further, although not shown, air is introduced into the apparatus inlet exhaust gas passing through the inlet heater 211 in the vicinity of the switching portion K.
通過過濾器212或過濾器212a後的裝置入口排氣係藉由配管P1朝箭頭B方向流動,進入設置在全氟化物之處理裝置2的上側之熱交換器231。而且,裝置入口排氣係藉由熱交換器231進行熱交換加熱。又,雖無圖示,此時在熱交換器231添加水,該水變成水蒸氣而與裝置入口排氣一起運送。 The apparatus inlet exhaust gas passing through the filter 212 or the filter 212a flows in the direction of the arrow B through the pipe P1, and enters the heat exchanger 231 provided on the upper side of the perfluorinated processing apparatus 2. Further, the device inlet exhaust is heat-exchanged by the heat exchanger 231. Further, although not shown, water is added to the heat exchanger 231 at this time, and the water becomes steam and is transported together with the device inlet exhaust.
從熱交換器231排出的裝置入口排氣係藉由配管P2朝箭頭C方向流動,進入設置在全氟化物之處理裝置2的右下側之第1加熱器221。第1加熱器221係橫型加熱器,從第7圖中左側流入裝置入口排氣,從第7圖 中右側排出裝置入口排氣。而且,第1加熱器221於內部配置有加熱器221a(參照第3圖),裝置入口排氣在第1加熱器221內部從左側朝右側移動時,進行加熱。 The device inlet exhaust gas discharged from the heat exchanger 231 flows in the direction of the arrow C through the pipe P2, and enters the first heater 221 provided on the lower right side of the perfluorinated processing device 2. The first heater 221 is a horizontal heater, and flows into the inlet of the device from the left side in Fig. 7, from Fig. 7 The middle right discharge device inlet is exhausted. Further, the first heater 221 is internally provided with a heater 221a (see FIG. 3), and the device inlet exhaust is heated when the inside of the first heater 221 moves from the left side to the right side.
接著,從第1加熱器221排出的裝置入口排氣係藉由配管P3朝箭頭D方向流動,進入設置在全氟化物之處理裝置2的右上側之第2加熱器222。第2加熱器222係縱型加熱器,在上方配置有加熱器222a(參照第3圖),在下方配置有觸媒層222b(參照第3圖)。而且,裝置入口排氣係從第2加熱器222的上方流入,藉由加熱器222a加熱至全氟化物的分解溫度,且朝第2加熱器222的下方流動。而且,在觸媒層222b,全氟化物與和裝置入口排氣混合後的水(水蒸氣)反應並分解。而且,變成含有分解後的產生物HF之酸性分解氣體,從第2加熱器222的下方排出。 Then, the device inlet exhaust gas discharged from the first heater 221 flows in the direction of the arrow D through the pipe P3, and enters the second heater 222 provided on the upper right side of the perfluorinated processing device 2. The second heater 222 is a vertical heater, and a heater 222a (see FIG. 3) is disposed above, and a catalyst layer 222b is disposed below (see FIG. 3). Further, the device inlet exhaust gas flows in from above the second heater 222, is heated by the heater 222a to the decomposition temperature of the perfluorinated product, and flows downward from the second heater 222. Further, in the catalyst layer 222b, the perfluorinated product reacts with water (water vapor) mixed with the inlet and outlet of the apparatus to decompose. Then, the acid decomposition gas containing the decomposition product HF is discharged from the lower side of the second heater 222.
而且,從第2加熱器222排出的分解氣體係藉由配管P4朝箭頭E方向流動,再度進入熱交換器231。然後,在熱交換器231,於高溫的分解氣體和低溫的裝置入口排氣之間進行熱交換。 Then, the decomposition gas system discharged from the second heater 222 flows in the direction of the arrow E by the pipe P4, and enters the heat exchanger 231 again. Then, in the heat exchanger 231, heat exchange is performed between the high-temperature decomposition gas and the low-temperature device inlet exhaust gas.
從熱交換器231排出的分解氣體係藉由配管P5朝箭頭F方向(第7圖中左方向)流動,進入設置在全氟化物之處理裝置2的上側之酸成分除去裝置232。此時,分解氣體係從酸成分除去裝置232的下方流入,朝酸成分除去裝置232的上方流動。而且,此時在由鈣鹽構成的藥劑層232a(參照第3圖),分解氣體所含的HF產生 吸附反應而被乾式除去。然後,變成無害化之排氣,從酸成分除去裝置232的上方排出。 The decomposition gas system discharged from the heat exchanger 231 flows in the direction of the arrow F (the left direction in FIG. 7) through the pipe P5, and enters the acid component removing device 232 provided on the upper side of the perfluorinated processing device 2. At this time, the decomposition gas system flows in from below the acid component removing device 232 and flows upward above the acid component removing device 232. Further, at this time, in the drug layer 232a composed of a calcium salt (refer to Fig. 3), HF generated in the decomposition gas is generated. The adsorption reaction is dry removed. Then, it becomes a harmless exhaust gas and is discharged from the upper side of the acid component removing device 232.
從酸成分除去裝置232排出的排氣係藉由配管P6朝箭頭G方向(第7圖中左方向)流動,進入設置在全氟化物之處理裝置2的左上側之粉末捕集器237。而且,藉由粉末捕集器237,除去鈣鹽粉末等。此外,在配管P6的途中,配置有HF濃度偵測器236,測定排氣中所含的HF濃度。又,本實施形態中,配管P6較長,周圍具備散熱鰭片。可換言之,此係因連接於酸成分除去裝置232且朝向噴射器233的配管P6係沿著矩形區域的另一方長邊側配置,具備冷卻排氣的散熱鰭片。藉此能進一步降低排氣的溫度。 The exhaust gas discharged from the acid component removing device 232 flows in the arrow G direction (the left direction in FIG. 7) through the pipe P6, and enters the powder trap 237 provided on the upper left side of the perfluorinated processing device 2. Further, the calcium salt powder or the like is removed by the powder trap 237. Further, in the middle of the pipe P6, the HF concentration detector 236 is disposed, and the HF concentration contained in the exhaust gas is measured. Further, in the present embodiment, the pipe P6 is long and has fins around it. In other words, the piping P6 connected to the ejector 233 is connected to the other side of the rectangular region, and the heat dissipating fins for cooling the exhaust gas are provided. Thereby, the temperature of the exhaust gas can be further reduced.
而且,從粉末捕集器237排出的排氣係最後藉由設置在全氟化物之處理裝置2的左上側之噴射器233吸引,藉由配管P7朝箭頭H方向(第7圖中上方向)流動,從排出口Ou排出至裝置外部。 Further, the exhaust gas discharged from the powder trap 237 is finally sucked by the ejector 233 provided on the upper left side of the perfluorinated processing apparatus 2, and the pipe P7 is directed in the direction of the arrow H (upward direction in Fig. 7). The flow is discharged from the discharge port Ou to the outside of the device.
此外,以上說明的全氟化物之處理裝置2之全氟化物之處理方法,具備:前處理步驟,係將裝置入口排氣予以前處理;加熱步驟,係將裝置入口排氣及水予以加熱,並且藉由預定的觸媒將全氟化物水解而產生含有酸性氣體的分解氣體;熱交換步驟,係配設在加熱步驟的前段及後段,用以在流入加熱步驟前的裝置入口排氣及水和從加熱步驟流出後的分解氣體之間進行熱交換;及酸成分除去步驟,係從熱交換步驟流出後的分解氣體將酸成分乾 式除去;前處理步驟具備:預熱步驟,係將裝置入口排氣加熱使含有全氟化物的氣體所含的液體的水蒸發;及固體成分除去步驟,係從藉由預熱步驟使液體的水蒸發後的含有全氟化物的氣體除去固體成分;本發明說是具備以上特徵之全氟化物之處理方法。 Further, the method for treating a perfluorinated product of the perfluorinated processing apparatus 2 described above includes a pretreatment step of pretreating the inlet and outlet of the apparatus, and a heating step of heating the inlet and the outlet of the apparatus. And the perfluorinated product is hydrolyzed by a predetermined catalyst to generate a decomposition gas containing an acid gas; and the heat exchange step is disposed in the front and rear portions of the heating step for introducing the exhaust gas and the water at the inlet of the device before the heating step And heat exchange between the decomposition gas flowing out from the heating step; and an acid component removal step of decomposing the gas after flowing out from the heat exchange step to dry the acid component The pretreatment step includes: a preheating step of evaporating the water of the liquid contained in the perfluorinated gas by heating the inlet of the apparatus; and removing the solid component from the liquid by the preheating step The perfluorinated gas after evaporation of water removes solid components; the present invention is a method for treating perfluorinated compounds having the above characteristics.
又,上述例中,已說明處理在半導體製造工場排出的蝕刻排氣中所含的全氟化物之情形,但當然不限定於此。例如,處理從液晶製造工場等排出的蝕刻排氣和洗淨排氣中所含的全氟化物之情形亦可。 Further, in the above example, the case of treating the perfluorinated substance contained in the etching exhaust gas discharged from the semiconductor manufacturing plant has been described, but it is of course not limited thereto. For example, it is also possible to treat the etched exhaust gas discharged from the liquid crystal manufacturing plant or the like and the perfluorinated matter contained in the exhaust gas.
2‧‧‧全氟化物之處理裝置 2‧‧‧Perfluoride treatment unit
4‧‧‧三方閥 4‧‧‧Three-way valve
21‧‧‧前處理單元 21‧‧‧Pre-processing unit
22‧‧‧全氟化物分解單元 22‧‧‧Perfluorinated decomposition unit
23‧‧‧HF吸附單元 23‧‧‧HF adsorption unit
24‧‧‧控制單元 24‧‧‧Control unit
211‧‧‧入口加熱器 211‧‧‧Inlet heater
211a‧‧‧加熱器 211a‧‧‧heater
212、212a‧‧‧過濾器 212, 212a‧‧‧ filter
212b‧‧‧噴嘴 212b‧‧‧ nozzle
212c‧‧‧差壓計 212c‧‧‧Differential Pressure Gauge
212e‧‧‧閥 212e‧‧‧ valve
221‧‧‧第1加熱器 221‧‧‧1st heater
221a、222a‧‧‧加熱器 221a, 222a‧‧‧ heater
222‧‧‧第2加熱器 222‧‧‧2nd heater
222b‧‧‧觸媒層 222b‧‧‧ catalyst layer
231‧‧‧熱交換器 231‧‧‧ heat exchanger
232‧‧‧酸成分除去裝置 232‧‧‧acid component removal device
232a‧‧‧藥劑層 232a‧‧‧ drug layer
233‧‧‧噴射器 233‧‧‧Injector
234‧‧‧藥劑供應裝置 234‧‧‧Pharmaceutical supply device
235‧‧‧藥劑排出裝置 235‧‧‧Drug discharge device
236‧‧‧HF濃度偵測器 236‧‧‧HF concentration detector
237‧‧‧粉末捕集器 237‧‧‧Powder trap
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