TWI525213B - Method of making enamel layer - Google Patents

Description

Method of making enamel layer

The present invention relates to a liquid phase process for producing a ruthenium layer from a high carbon decane which can be produced from a non-cyclic decane.

The synthesis of tantalum layers is extremely important in the semiconductor industry, particularly for the fabrication of electronic or optoelectronic component layers, such as for the fabrication of solar cells, photodiodes and transistors.

The ruthenium layer can basically be made by a number of methods. However, among them, spattering techniques have the disadvantage that they must be carried out under high vacuum. Vapor deposition methods have other disadvantages in that i) in the case of thermal reactions, they must be used at very high temperatures or ii) they must be used in the form of energy-based electromagnetic radiation that is required for the decomposition of precursors. Energy Density. In both cases, the energy required to decompose the precursor can only be introduced in a controlled and uniform manner with extremely high equipment complexity. Since other methods of fabricating the tantalum layer also have disadvantages, the tantalum layer is preferably formed by deposition from a liquid phase.

In this liquid phase process for producing a ruthenium layer, a liquid reactant (optionally as a solvent for other additives and/or dopants) or a reactant (which is itself a liquid or a solid) (and other additives of selectivity and The liquid solution of the / or dopant) is applied to the substrate to be coated and then converted into a layer of ruthenium by heat and/or electromagnetic radiation.

Here, the reactant which is preferably used is hydrohalane. These compounds consist essentially of hydrazine and hydrogen atoms and have the advantage that they react and convert Provided by the deposition of ruthenium (possibly having residual hydrogen content favoring electronic properties) and gaseous hydrogen.

The prior art specifically includes a liquid phase process for producing a ruthenium layer from a cyclic decane (including a spiro compound) or from a high carbon decane (an oligomer which can be produced from a cyclic decane (including a spiro compound).

For example, EP 1 134 224 A2 describes a method of producing a ruthenium film on a surface of a substrate, wherein a solution containing cyclopentane and decylcyclopentane or spiro[4.4] decane is applied to the surface of the substrate to form a coating film, and the coating is applied. The film is then converted to a ruthenium film by heating. In this method, it has been found that mercaptocyclopentane and spiro[4.4]nonane have properties as a radical polymerization initiator for cyclopentane or are themselves polymerized and ring-opened, enabling the use of mercaptocyclopentane and snails. [4.4] decane or a mixture thereof with cyclopentane, which is selectively subjected to thermal light (thermal conversion) after first irradiation with UV light. The described thermal conversion time is from 30 seconds to 30 minutes, and the temperature exceeds 300 ° C, preferably from 400 to 500 ° C.

The ring-opening polymerization of the cyclic compound used substantially forms a linear oligomer. However, these substantially linear oligomers have the disadvantage that they can be used to make tantalum layers only in a very narrow molecular weight range: too low molecular weight results in poor or no wetting. Too high a molecular weight results in a composition that is unstable, from which an excessive oligomer precipitate is formed and a layer that is well wetted and uniform is not obtained. A liquid phase process for producing a ruthenium layer from a cyclic decane or a high carbon decane (oligomer) which can be prepared from the same, as described in the prior art for self-linear decane (optionally and cyclically). A method in which a ruthenium layer is combined with a high carbon decane (oligomer) which can be produced from the same.

For example, JP 07-267621 A describes a method for thermally producing a tantalum layer on a substrate, wherein a liquid decane of the formula Si _m H _2m+2 (where m≧5) or Si _n H _2n (where n≧4) is used. . The tantalum layer which can be produced by the method described therein may be amorphous or polycrystalline. The conversion temperature is 200-550 ° C to obtain an amorphous ruthenium layer. Above 550 ° C, a polycrystalline layer should be obtained. Below 200 ° C, it is said that conversion to hydrazine will be incomplete. This example describes a conversion time of 30 minutes (300 ° C; 350 ° C; 450 ° C) and 60 minutes (700 ° C).

JP 09-045922 A also describes a method for producing a polycrystalline tantalum layer on a substrate, wherein a silane of the formula Si _m H _2m+2 (where m≧5) or of the formula Si _n H _2n (where n≧4) is used Irradiation method. The conversion temperature described herein is from 200 to 550 °C. Below 200 ° C, it is said that conversion to hydrazine will be incomplete. This example describes a conversion time of 30 minutes (350 ° C; 480 ° C) under hydrogen plasma.

No. 5,866,471 A describes, inter alia, a linear or cyclic hydrodecane substituted with a linear or cyclic hydrohalane and a mercapto group which is thermally decomposable to provide a semiconductor film. The substrate is solid at room temperature, soluble in an organic solvent and has a degree of polymerization of preferably from 3 to 10,000, more preferably from 5 to 30. They are further preferably thermally decomposed at 200 to 700 ° C, and the hardening time is from 10 minutes to 10 hours.

No. 5,700,400 A describes a process for the manufacture of a semiconductor material in which a hydroquinone monomer is subjected to dehydrogenation condensation, after which the intermediate product is thermally decomposed. The hydrodecane monomer may be a monodecane, dioxane or trioxane derivative. The thermal decomposition is carried out at a temperature of from 200 to 1000 ° C, preferably from 200 to 700 ° C. The conversion time indicated in the examples ranged from 1 hour (700 °C) to 24 hours (200 °C).

The experience of EP 1 085 560 A1 teaches the use of cyclic decane compounds of the formula Si _n X _m (n≧5 and m=n, 2n-2 or 2n) and/or of the formula Si _a X _b Y _c (where a≧3, The modified decane of b = a to 2a + c + 2, c = 1 to a) is used to make a ruthenium film using heat and/or light. This can provide an amorphous or polycrystalline layer. After drying, a polycrystalline layer can be obtained by a conversion temperature of up to 550 ° C, and after drying, a polycrystalline layer can be obtained by a conversion temperature higher than 550 ° C. This example describes a conversion time of 30 minutes (300 ° C).

EP 1 085 579 A1 describes a process for the production of solar cells in which a liquid composition containing decane is used and converted by heat, light and/or laser treatment. The liquid coating composition may contain a solvent and a cyclic oxime compound of the formula Si _n X _m (X=H, Hal, n≧5, m=n, 2n-2, 2n) or a formula Si _a X _b Y _c ( Modified decane wherein X = H, Hal, Y = B, P, a ≧ 3, c = 1 to a and b = a to 2a + c + 2). The conversion of this coating composition to decane can be achieved by a conversion step after the drying step. Indicates that the typical drying temperature is in the range of 100-200 °C. It is also stated herein that the ruthenium layer is only significantly converted from 300 ° C, the amorphous layer is obtained from 300 ° C to 550 ° C, and the polycrystalline layer is obtained at 550 ° C. Conversion time not reported.

EP 1 087 428 A1 describes an ink composition containing a ruthenium precursor, the ruthenium film of which can be produced by printing. Wherein the yttrium is of the formula (I) Si _n X _m (where n ≧ 3, m=n, 2n-2, 2n or 2n+2 and X=H and/or Hal) or (II) Si _a X _b Y _c (wherein X = H and / or Hal, Y = B, P, a ≧ 3, b = a to 2a + c + 2, c = 1 to a) compounds, which may be used alone or in a mixture . The cyclic compound of the formula (I) is preferred. A ruthenium film can be made using heat and/or light. When heat is used, this conversion is carried out essentially at a temperature of from 100 to 800 °C. This can provide an amorphous or polycrystalline layer. An amorphous layer can be obtained by a conversion temperature of 550 ° C, and a polycrystalline layer can be obtained by a conversion temperature higher than 550 ° C. Less than 300 ° C is not converted. The conversion time described by this example is 30 minutes.

EP 1 357 154 A1 describes a "high carbon decane" composition comprising a polydecane which can be produced by irradiating a photopolymerizable decane with UV radiation. The photopolymerizable decane may be a decane of the formula Si _n X _m (where n ≧ 3, m ≧ 4, X = H, Hal), and the compound specified by the example is a cyclic decane or Si _n of the formula Si _n X _2n . A di- or polycyclic structure of H _2n-2 , and other decane having a cyclic structure in the molecule, which is highly reactive to light and efficiently photopolymerized. This "high carbon decane" composition can be converted into a ruthenium film by a thermal decomposition reaction or a photodecomposition reaction on a substrate. For this purpose, the wet film is dried by heat (essentially 100-200 ° C) and then converted by heat and/or light. An amorphous film can be obtained by heat treatment at a temperature lower than 550 ° C; at a higher temperature, a polycrystalline film is obtained. This example reported a conversion time of 10 minutes (350 ° C, 400 ° C, 500 ° C).

JP 2004-134440 A1 relates to the irradiation of a decane composition in the production of tantalum. The decane composition used may be (i) a silane of the formula Si _n R _m (where n ≧ 11 and m = n to (2n + 2), where R may be H), or (ii) a formula Si _i H _{2i+ 2} (where i = 2-10), Si _j H _2j (where j = 3-10) or Si _k H _k (where k = 6, 8 or 10) of decane, in each case, selected from cyclopentane And at least one decane of cyclohexanane and decylcyclopentane is combined. Each of the decanes may be in the form of a link, a ring or a cage. The illumination time is about 0.1 to 30 minutes, and the temperature during the irradiation may be from room temperature to 300 °C. This method provides a ruthenium film product which can be converted into a ruthenium film by 100-1000 ° C, preferably 200-850 ° C, more preferably 300-500 ° C. When the conversion temperature selected is higher than 550 ° C, a polycrystalline ruthenium layer is also obtained. Below 300 ° C, the formation of the film is incomplete. The example reported a conversion time of 30 minutes (400 ° C), 60 minutes (300 ° C, 250 ° C).

However, a common feature of all of these methods is that they result in poor optical and electrical properties. The index of the optical and electrical properties of the ruthenium layer, and more particularly the index of its photoconductivity, can be the absorption coefficient α, which can be determined by PDS analysis in the intermediate energy gap (1.2 electron volts for Si). Generally, low alpha values represent good electrical and optical properties, while high alpha values represent poor electrical and optical properties. This alpha value can be regarded as the frequency of the state (intermediate energy gap state) in the band gap in the resulting layer. The state in the band gap (intermediate energy gap state) is an electronic state in the band gap, which deteriorates the electrical properties of the semiconductor material, for example, the photoconductivity and lifetime of the charge carriers, since they act as electron traps Therefore, for example, the yield of the charge carrier for photocurrent is lowered. These states are usually unsaturated 矽 bonds ('dangling keys').

Accordingly, it is an object of the present invention to provide a liquid phase process for making a tantalum layer that avoids the disadvantages of the prior art. More particularly, a liquid phase process for making a tantalum layer should be provided wherein the blend used is stable and sufficiently wets the substrate and which results in a uniform tantalum layer having better electrical and optical properties. It is also particularly advantageous to be able to produce an aSi:H layer having a lower absorption coefficient α (measured by PDS, measured at 1.2 electron volts for aSi:H).

In this case, the object is achieved by the liquid phase process of the invention for thermally producing a ruthenium layer on a substrate, wherein at least one hydroquinone of the formula Si _a H _2a+2 (where a = 3-10) is used. The at least one high carbon decane produced is applied to the substrate and then converted by heat into a layer substantially comprising ruthenium, wherein the high carbon decane is thermally converted at a temperature of 500-900 ° C and a conversion time of 5 minutes. Surprisingly, it is also possible to obtain a layer of ruthenium which is particularly good in purity.

The liquid phase process for understanding the heat-producing ruthenium layer herein refers to a liquid phase reactant (optionally as a solvent for other additives and/or dopants) or a reactant (which is itself a liquid or a solid) (and a liquid phase solution of a selective other additive and/or dopant; the latter in particular in the form of elemental compounds of Group III and V of the main group) is applied to the substrate to be coated and then supported by heat (optionally supported by electromagnetic rays) A method of converting into a layer substantially comprising ruthenium. The reactant used in the present case is at least one high carbon decane which can be prepared from at least one hydrooxane of the formula Si _a H _{2a + 2} (where a = 3-10). The hydrohalo alkane of the formula Si _a H _2a+2 (where a = 3-10) is acyclic, i.e., linear or branched, hydrodecane. Corresponding methods for producing high carbon decane are known to those skilled in the art. Examples include photochemical, anionic, cationic or catalytic polymerization processes. Among them, preferred is initiated by UV irradiation and subjected to a radical polymerization method, and this irradiation time is related to the obtained average molecular weight. All of the polymerization processes have in common that they are carried out in a dissociated manner, which is different from the ring opening reaction described with respect to cyclic decane, i.e. they are on average due to the dissociation reaction mechanism and the dissociated intermediate or intermediate formed state. High carbon decane has a relatively high content of branching and/or crosslinking. Experience has shown that the molecular weight of the high carbon decane which can be produced from at least one hydrooxane of the general formula Si _a H _2a+2 (where a = 3-10) can be made heterogeneous via polymerization. Therefore, "high carbon decane" in the present invention means that hydroquinane defined by at least one formula Si _a H _2a+2 (where a = 3-10) is produced by dissociation polymerization and the average molecular weight is higher than that of the reactant used. (This is due to the chosen polymerization method) of decane.

In the process according to the invention, it is preferred to use a high carbon decane having a weight average molecular weight (determined by the GPC method) of from 330 to 10,000 g/mole. The weight average molecular weight of the high carbon decane is more preferably from 330 to 5000 g/mol, more preferably from 600 to 4000 g/mol, as determined by the GPC method.

The at least one high carbon decane may, if it is a liquid itself, be applied to the substrate without further dissolution in the solvent. However, this high carbon decane is preferably applied to the substrate in a form dissolved in a solvent.

Preferred solvents are those derived from linear, branched or cyclic, saturated, unsaturated or aromatic hydrocarbons having from 1 to 12 carbon atoms (optionally partially or fully halogenated), alcohols, ethers, carboxylic acids, esters , a group of nitriles, amines, guanamines, hydrazines and water. Particularly preferred are n-pentane, n-hexane, n-heptane, n-octane, n-decane, dodecane, cyclohexane, cyclooctane, cyclodecane, dicyclopentane, benzene, toluene, m- Xylene, p-xylene, 1,3,5-trimethylbenzene, indane, hydrazine, tetrahydronaphthalene, decahydronaphthalene, diethyl ether, dipropyl ether, ethylene glycol dimethyl ether, ethylene glycol diethyl ether , ethylene glycol methyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol methyl ethyl ether, tetrahydrofuran, p-two , acetonitrile, dimethylformamide, dimethyl hydrazine, dichloromethane and chloroform. Particularly preferred solvents are hydrocarbons, n-pentane, n-hexane, n-hexane, n-octane, n-decane, dodecane, cyclohexane, cyclooctane, cyclodecane, benzene, toluene, m-di Toluene, p-xylene, 1,3,5-trimethylbenzene, indane and hydrazine.

When the at least one high carbon decane is used in a solvent, the percentage thereof is preferably at least 5% by weight based on the total weight of the composition. When the at least one high carbon decane is applied to the substrate in a form which is not further dissolved in a solvent, the weight percentage thereof is preferably from 70 to 100 by weight depending on whether it is itself a solvent for other additives and/or dopants. %, which is based on the total weight of the composition. Accordingly, preferably, the at least one high carbon decane is used in a proportion of from 5 to 100% by weight based on the total weight of the composition. When the proportion of the at least one high carbon decane contained in the composition is from 10 to 50% by weight, a particularly thin layer can be obtained.

In order to achieve a positive layer property with at least one higher carbon decane produced by a hydrohalane of the general formula Si _a H _2a+2 , it is also possible to apply at least one dopant selected from a compound of the main group III or V element to the substrate. . Corresponding compounds are known to those skilled in the art. Preferred dopants are BH _x R _3-x type (where x = 1-3 and R = C ₁ - C ₁₀ - alkyl, unsaturated cyclic (selective ether mismatch or amine mismatch C) a boron compound of ₂ -C ₁₀ -alkyl), a formula of Si ₅ H ₉ BR ₂ (R=H, Ph, C ₁ -C ₁₀ -alkyl) and Si ₄ H ₉ BR ₂ (R=H, Ph, C a compound of ₁ -C ₁₀ -alkyl), red phosphorus, white phosphorus (P ₄ ), formula PH _x R _3-x (where x=0-3 and R=Ph, SiMe ₃ , C ₁ -C ₁₀ -alkyl a compound, and a formula P ₇ (SiR ₃ ) ₃ (R=H, Ph, C ₁ -C ₁₀ -alkyl), Si ₅ H ₉ PR ₂ (R=H, Ph, C ₁ -C ₁₀ -alkane) a compound of Si) and Si ₄ H ₉ PR ₂ (R = H, Ph, C ₁ -C ₁₀ -alkyl).

Many substrates can be used with regard to the method of the present invention. Preferably, the substrate comprises glass, quartz glass, graphite or metal. Other preferred metals are aluminum, stainless steel, Cr steel, titanium, chromium and molybdenum. Polymeric films such as PEN, PET or polyimine can also be used. Other preferred are thermally compatible metal foils (selectively having a layer that acts as a diffusion barrier for the metal (eg, carbon, Si ₃ N ₄ ) and a conductive layer on the diffusion barrier (eg, TCO, ZnO, SnO) ₂ , ITO or metal)). The diffusion barrier used may be Al, SiO _x , Al _x O _y and Pt, Pd, Rh and Ni. Particularly suitable are oxides of Ti, Al and Zr, and nitrides of Ti and Si.

Also preferably, the substrate used may be a tantalum or tantalum layer, an indium tin oxide (ITO) layer, a ZnO:F layer or a SnO ₂ :F (FTO) layer present on a thermally compatible support.

Preferred methods for applying high carbon decane are selected from printing methods (especially fast drying/gravure printing, ink jet printing, lithography, digital lithography and screen printing), spray methods, spin coating methods ("spin coating" "), a method of dipping ("dip coating") and a method selected from the group consisting of meniscus coating, slit coating, slot die coating, and The method of curtain coating.

After coating and prior to conversion, the coated substrate can be further dried to remove any solvent present. The corresponding measurement methods and conditions are known to those skilled in the art. In order to remove only the solvent, in the case of thermal drying, the heating temperature should not exceed 250 °C.

The conversion according to the method of the present invention is carried out at a temperature of from 500 to 900 ° C and a conversion time of ≦ 5 minutes. A similar rapid thermal method can be achieved, for example, by using an IR lamp, a hot plate, a furnace, a flash lamp, an RTP system, or a microwave system (when required, each being preheated or warmed). Conversion temperature is Particularly good optical and electrical properties are achieved at 500-650 °C.

The conversion time is preferably from 0.1 milliseconds to 120 seconds. In order to achieve particularly good optical and electrical properties, the conversion time should be chosen to be 0.1-60 seconds.

When thermal conversion is carried out in a single heat treatment step, the quality of the resulting layer is also positively affected, i.e., the substrate is preferably removed from the heat source and then heated after the initial conversion.

When UV rays are irradiated before, during or after heat treatment, the quality of the resulting layer is also positively affected. These positive effects are greatest when irradiated with UV rays after application of high carbon decane and prior to conversion. Typical exposure times are from 1 to 20 minutes.

Preferred layers are also obtained when a reduced pressure (down to vacuum) is applied after the application of the high carbon decane and prior to its conversion. Preferably, the reduced pressure is from 1.10 ^-3 mbar to 0.5 bar. The coated substrate is more preferably treated under reduced pressure for 1 to 20 minutes.

In the case of manufacturing multiple layers (eg, tandem solar cells), the same time/temperature limit (thermal budget) should be fully adhered to. In other words, the sum of all temperature steps >500 ° C should preferably be maintained for <5 minutes.

The method of the invention is particularly suitable for use in the manufacture of amorphous tantalum layers. The methods and means for obtaining this in a corresponding manner are known to those skilled in the art. Understanding the amorphous tantalum layer means that the Raman spectrum of the layer has only one peak with a peak highest in the range of 450 cm ^{-1 to} 500 cm ^-1 and a FWHM (full width at half maximum) of 50-100 cm ^-1 . Accordingly, the present invention also provides a liquid phase process for thermally producing an amorphous tantalum layer on a substrate, wherein at least one hydroxane of the formula Si _a H _2a+2 (where a = 3-10) is produced. A high carbon decane is applied to the substrate and then converted by heat into a layer comprising substantially rhodium, wherein the high carbon decane is thermally converted at a temperature of 500-900 ° C and a conversion time of 5 minutes.

The invention further provides a layer of tantalum that can be fabricated by this method.

The invention also provides the use of a layer of tantalum which can be obtained by the process according to the invention for the preparation of electronic or photovoltaic component layers, in particular for photovoltaic applications or for transistors.

The following examples are provided to provide additional additional description of the subject matter of the invention.

Example:

All operations were performed in an N ₂ glove box excluding O ₂ .

A. Synthesis of high carbon decane Example 1 - Materials for Use in the Invention

3 ml of neopentane was irradiated with a UV lamp in a weighing bottle until the weight average molecular weight reached about M _w = 900 g/mole.

Example 2 - Materials for Comparative Examples:

3 ml of cyclopentane was irradiated with a UV lamp in a weighing bottle until the weight average molecular weight reached about M _w = 2200 g/mole.

B. Layer manufacturing Example 1:

50 microliters of the 37.5 wt% blend of the oligomeric decane obtained in the previous Example 1 in cyclooctane was applied dropwise to a glass substrate having a size of 2.5 x 2.5 cm ² and rotated by a spin coater at 2000 rpm. The resulting film was hardened on a hot plate at 600 ° C for 20 seconds. A brown Si layer having a thickness of about 130 nm was obtained (refer to Fig. 1). The PDS data shows an alpha value of 103 cm ^-1 at 1.2 eV, which is indicated by the Raman data as 100% amorphous aSi:H.

Comparative Example 1:

50 microliters of the 37% by weight blend of the oligomeric decane obtained in the previous Example 1 in cyclooctane was applied dropwise to a glass substrate having a size of 2.5 x 2.5 cm ² and rotated by a spin coater at 2000 rpm. The resulting film was hardened on a hot plate at 400 ° C for 10 minutes. A brown Si layer having a thickness of about 140 nm was obtained. The PDS data shows an alpha value of 1.2 cm ^-1 at 1.2 eV, which is indicated by the Raman data as 100% amorphous aSi:H.

Comparative Example 2:

50 microliters of the 28.5% by weight blend of the oligomeric decane obtained in the previous Example 2 in cyclooctane was applied dropwise to a glass substrate having a size of 2.5 x 2.5 cm ² and rotated by a spin coater at 6000 rpm. The resulting film was hardened on a hot plate at 400 ° C for 10 minutes. A brown Si layer having a thickness of about 142 nm was obtained. The PDS data shows an alpha value of 172 cm ^-1 at 1.2 eV, which is indicated by the Raman data as 100% amorphous aSi:H.

Comparative Example 3:

3 ml of cyclopentane was irradiated with a UV lamp in a weighing bottle until the weight average molecular weight was about M _w = 3100 g/mole. 50 μl of the obtained 37.5 wt% blend of the oligomeric decane in cyclooctane was applied dropwise to a glass substrate having a size of 2.5 x 2.5 cm ² and rotated by a spin coater at 2500 rpm. The resulting film was cured on a hot plate at 500 ° C for 60 seconds (refer to Fig. 2).

Figure 1 shows a high carbon germane layer prepared from neopentane.

Figure 2 shows a high carbon decane layer prepared from cyclopentane.

Claims (13)

A liquid phase method for thermally producing a ruthenium layer on a substrate, wherein at least one high carbon decane produced from at least one neopentane having the general formula Si(SiH ₃ ) ₄ is applied to a substrate and then converted into a basic by heat The layer comprising ruthenium is characterized in that the high carbon decane is thermally converted at a temperature of from 500 to 900 ° C - and a conversion time of from 0.1 to 60 seconds. The method of claim 1, wherein the at least one high carbon decane has a weight average molecular weight of from 330 to 10,000 g/mole. The method of claim 1 or 2, wherein the at least one high carbon decane is dissolved in a solvent and applied to the substrate. The method of claim 1 or 2, wherein the at least one high carbon decane is used in a proportion of from 5 to 100% by weight based on the total weight of the composition. The method of claim 1 or 2, wherein the at least one high carbon decane is applied to the substrate together with a dopant of at least one compound selected from the group consisting of elements of the main group III or V. The method of claim 1 or 2, wherein the substrate comprises glass, quartz glass, graphite, metal, plastic or tantalum, or tantalum, indium tin oxide, ZnO:F or SnO present on a thermally compatible carrier ₂ : F layer. The method of claim 1 or 2, wherein the at least one high-carbon decane is selected from the group consisting of a printing method, a spray method, a spin coating method, a dipping method, a meniscus coating, and a slit. Slip coating, slot die coating, and It is applied by the method of curtain coating. The method of claim 1 or 2, wherein the thermal conversion is carried out at a temperature of from 500 to 650 °C. The method of claim 1 or 2, wherein the thermal conversion is carried out in a single thermal procedure step. The method of claim 1 or 2, wherein the UV irradiation is applied before, during or after the heat treatment. The method of claim 1 or 2, wherein the reduced pressure is applied after the application of the high carbon decane and before the conversion thereof. A layer of ruthenium which can be obtained by the method of claim 1 of the patent scope. A use of a layer of ruthenium which can be obtained by the method of claim 1 of the patent scope for the preparation of an electronic or optoelectronic component layer.