TWI521655B - High frequency module and high frequency module carrying device - Google Patents

Description

High frequency module and high frequency module mounting device

The present invention relates to a module in which a semiconductor substrate is disposed on one main surface of a wiring substrate, and a module mounting device on which the module is mounted.

In recent years, with the miniaturization and thinning of mobile terminal devices such as mobile phones, it is required to miniaturize the modules mounted thereon. Therefore, as shown in FIG. 4, a semiconductor substrate 102 having a face-down configuration (flip-chip mounting) on one main surface of the wiring substrate 101 constituting the module 100 is proposed, and the semiconductor substrate 102 is provided. A columnar connection terminal 103 disposed on the same main surface, and a module covering the resin substrate 104 of the semiconductor substrate 102 and the columnar connection terminal 103 (Patent Document 1).

In this case, after the columnar connection terminals 103 are formed on one main surface of the module 100, the semiconductor substrate 102 is flip-chip mounted, and then the resin layer 104 covering the semiconductor substrate 102 and the connection terminals 103 is formed. Next, the resin layer 104 and the upper surface of the semiconductor substrate 102 are polished so that the connection terminal 103 and the end surface of the semiconductor substrate 102 are exposed from the surface of the resin layer 104, and the module 100 is formed.

The semiconductor substrate 102 having the flip chip structure is formed with a circuit on the opposite surface of the wiring substrate 101, and the upper surface of the semiconductor substrate 102 (with respect to the non-opposing main surface of the wiring substrate) is polished, and the characteristics of the semiconductor substrate 102 are not changed. The height of the module 100 can be lowered. Therefore, the module 100 can be formed by polishing the resin layer 104 and the semiconductor substrate 102 until the end faces of the connection terminals 103 are exposed. The height is lower. Further, since the upper surface of the semiconductor substrate 102 having a higher thermal conductivity than the resin of the resin layer 104 is exposed from the surface of the resin layer 104, the heat dissipation characteristics of the module 100 are also improved.

Patent Document 1: JP-A-2002-343904 (refer to paragraph 0013, FIG. 1 and the like)

However, in the above-described conventional technique, since the upper surface of the semiconductor substrate 102 is exposed from the resin layer 104, the heat dissipation characteristics of the module are improved as compared with the module in which the upper surface of the semiconductor substrate 102 is covered by the resin layer 104, but the heat is generated in the package. In the case of a high-performance semiconductor substrate (for example, a power amplifier IC used in a high-frequency module or the like), there are defects such as insufficient heat dissipation and malfunction of the semiconductor substrate 102. Therefore, the heat dissipation characteristics of the module 100 are required to be further improved.

The present invention has been made in view of the above problems, and an object thereof is to provide a module having excellent heat dissipation characteristics and a module mounting device equipped with the module.

In order to achieve the above object, a module of the present invention includes: a wiring substrate; a semiconductor substrate mounted on one main surface of the wiring substrate; and a resin layer, wherein the semiconductor substrate is not opposite to the wiring substrate The semiconductor substrate is coated on the main surface to be formed on the main surface, and a metal film is formed on at least a portion of the non-opposing main surface of the semiconductor substrate.

According to the above configuration, since the heat generated from the module is dissipated by the metal film having a higher thermal conductivity than the semiconductor substrate, the non-opposing main surface of the semiconductor substrate that is not opposed to the wiring substrate is exposed from the resin layer. Compared with the conventional module, the heat dissipation characteristics of the module can be improved.

Further, by forming a metal film having a ductility on at least a part of the non-opposing main surface on the opposite side of the wiring substrate from the semiconductor substrate, the non-opposing main surface of the semiconductor substrate exposed from the resin layer is protected, and the semiconductor can be suppressed. The substrate is damaged by an impact or the like from the outside.

Further, irregularities may be formed on the surface of the metal film. Thus, since the surface area of the metal film exposed from the surface of the resin layer is increased, the heat dissipation characteristics of the module are further improved.

Further, the metal film may be formed by plating. By configuring in the above manner, a metal film can be formed by plating.

Further, a columnar connection terminal vertically provided on the one main surface is provided; and the front end surface of the connection terminal may be exposed from the surface of the resin layer. According to the above configuration, since the front end surface of the connection terminal having a higher thermal conductivity than the resin layer is also exposed from the resin layer, the heat dissipation characteristics of the module are further improved. Moreover, the external mother substrate or the like can be connected to the module by the connection terminal.

Further, the module mounting device of the present invention includes: the module; and a mother substrate connected to the metal film of the module. According to the above configuration, it is possible to provide a module mounting substrate on which a module having excellent heat dissipation characteristics is mounted.

Further, for example, when a module structure of a semiconductor substrate and a connection terminal is disposed on one main surface of the wiring substrate, the metal film of the semiconductor substrate can be used for connection to the mother substrate, and the metal film of the connection terminal and the semiconductor substrate can be used. Since the two modules are connected to the mother substrate, the connection strength between the module and the mother substrate is increased as compared with the conventional module in which only the connection terminal is connected to the mother substrate.

Further, when irregularities are formed on the surface of the metal film, the connection area between the module and the mother substrate when the module is connected to the mother substrate is increased, so that the connection strength between the module and the mother substrate is increased.

Further, the metal film of the module may be connected to a ground electrode formed on the ground of the mother substrate. According to the above configuration, the metal film (module) and the mother substrate are connected so that the non-opposing main surface of the semiconductor substrate opposite to the wiring substrate faces the mother substrate. The shape of the semiconductor substrate is closer to the ground electrode of the mother substrate than the conventional module in which the non-opposing main surface of the semiconductor substrate is covered with the resin. Therefore, the shielding property of the semiconductor substrate caused by the ground electrode is improved. Furthermore, if the distance between the semiconductor substrate and the ground electrode is close, the heat generated from the module is easily dissipated through the ground electrode of the mother substrate, so that the heat dissipation characteristics of the module are also improved.

According to the present invention, the resin layer covering the semiconductor substrate is formed such that the semiconductor substrate that is mounted on one of the main surfaces of the wiring substrate is not exposed to the opposite main surface of the wiring substrate, and the non-pair of the exposed semiconductor substrate A metal film having a higher thermal conductivity than the semiconductor substrate is formed on at least a portion of the main surface, whereby the heat dissipation characteristics of the module can be improved as compared with the conventional module in which the non-opposing main surface of the semiconductor substrate is exposed from the resin layer.

1‧‧‧Modular carrying device

2‧‧‧ modules

3‧‧‧ mother substrate

5‧‧‧Ground electrode

8‧‧‧Connecting terminal

9‧‧‧Semiconductor substrate

10‧‧‧Metal film

11‧‧‧Wiring substrate

13a, 13b‧‧‧ resin layer

BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional front view showing a module mounting device incorporating a module according to an embodiment of the present invention.

2(a) to (c) are explanatory views of a method of manufacturing the module of Fig. 1.

3(a) and 3(b) are explanatory views showing a method of manufacturing the module of Fig. 1.

Figure 4 is a cross-sectional view of a conventional module.

(Composition of module mounting device)

A module mounting device 1 on which a module 2 according to an embodiment of the present invention is mounted will be described with reference to Fig. 1 . In addition, FIG. 1 is a cutaway front view of the module mounting device 1 on which the module 2 is mounted.

As shown in FIG. 1 , the module mounting device 1 equipped with the module 2 of the present embodiment includes a mother substrate 3 , a module 2 mounted on the mother substrate 3 , and a mother substrate 3 and a module 2 . The underfill resin layer 4 formed of a resin in the connection portion is mounted on a mobile phone or the like using a high frequency. Electronic machine.

The mother substrate 3 is internally formed with a grounding electrode 5 for grounding and a wiring pattern (not shown) constituting various circuits, and the ground electrode 5 and the wiring pattern are connected to a predetermined wiring pattern or formed in the mother via the via hole conductor 6 or the like. The electrode 7 for mounting on the front and back surfaces of the substrate 3 or the like. In the present embodiment, the ground electrode 5 formed on the mother substrate 3 is connected to the package electrode 7 through the via hole conductor 6, and the structure electrode 7 is connected to the columnar connection terminal 8 and the semiconductor substrate formed in the module 2 to be described later. The metal film 10 of the non-opposing main surface 9a which is not opposite to the wiring substrate. Further, the mother substrate 3 is formed of a material such as glass epoxy resin or ceramic. Further, the connection terminal 8 is not necessarily connected to the ground electrode 5. For example, only one of the two connection terminals 8 shown in FIG. 1 may be connected to the ground electrode 5 via the via hole conductor 6.

Further, the underfill resin layer 4 is made of, for example, an epoxy resin, and is formed by filling a resin so as to fill a gap between the mother substrate 3 and the module 2 when the module 2 is mounted on the mother substrate 3. Further, the bottomless resin layer 4 may also be used.

(Composition of Module 2)

Next, the module 2 of this embodiment will be described with reference to Fig. 1 .

As shown in FIG. 1, the module 2 includes a wiring board 11, a semiconductor substrate 9 that is mounted on one main surface 11a of the wiring board 11, and a columnar connection terminal 8 that is vertically disposed, and is mounted on the wiring board 11. The wafer part 12a, 12b, 12c of the other main surface 11b, the semiconductor substrate 9 of the main surface 11a of the wiring substrate 11 and the resin layer 13a of the connection terminal 8, and the wafer part 12a of the other main surface 11b of the covered wiring board 11 The module of the resin layer 13b of the ~12c is exemplified by a Bluetooth (registered trademark) module, a wireless LAN module, and an antenna switch module disposed under the antenna immediately adjacent to the mobile phone.

The wiring board 11 is formed of a glass epoxy resin substrate, a low temperature simultaneous firing ceramic (LTCC) substrate, a glass substrate, or the like, and the electrode 15 for forming, the electrode 15a for forming the connection terminal 8, and the wiring are formed on the both main surfaces 11a and 11b. A ground electrode 14 for grounding, another wiring pattern (not shown), a via conductor (not shown), and the like are formed inside the pattern (not shown) or the like. Further, the wiring board 11 may be either a single layer substrate or a multilayer substrate.

For example, in the case where the wiring substrate 11 is a LTCC multilayer substrate, a ceramic green sheet obtained by mixing a mixed powder of alumina, glass, or the like with an organic binder and a solvent, and the like, is formed. A through hole is formed by laser processing or the like, and a conductor paste containing Ag or Cu is filled in the formed via hole to form a via hole conductor for interlayer connection, and various electrode patterns are formed by printing using a conductor paste. . Thereafter, each ceramic green sheet is laminated and pressure-bonded to form a ceramic laminate, which is produced by firing at a low temperature of about 1000 ° C and so-called low-temperature firing.

Further, on both main surfaces 11a and 11b of the wiring board 11, the semiconductor substrate 9 and the wafer components 12a to 12c are mounted as a component. The semiconductor substrate 9 is formed with a predetermined circuit on the surface facing the main surface 11a of the wiring substrate 11, and is configured, for example, to form a system IC for processing an RF signal or a fundamental signal, and to face down (flip-chip) for wiring. One of the main faces 11a of the substrate 11. Further, the wafer components 12a to 12c are composed of a wafer capacitor, a chip inductor, and a chip resistor, and are mounted on the other main surface 11b of the wiring substrate 11 by a known surface mounting technique. Further, a columnar (pin-shaped) connection terminal 8 is further formed on one main surface 11a of the wiring board 11. Further, the connection terminal 8 is made of, for example, Cu as a main component, and is soldered to the electrode 15a.

In this case, only the semiconductor substrate 9 and the connection terminal 8 which face down are disposed on one main surface 11a of the wiring substrate 11, and the semiconductor base is disposed on the other main surface 11b of the wiring substrate 11. Other components (wafer parts 12a to 12c) other than the board 9. Further, the metal film 10 is formed on the end surface 8a of the non-opposing main surface 9a of the semiconductor substrate 9 and the connection terminal 8. This metal film 10 is, for example, a Ni/Au film in which an Au layer is formed on the non-opposing main surface 9a of the semiconductor substrate 9 (or the front end surface 8a of the connection terminal 8) by a plating process, and an Au layer is formed from the Ni layer. . Further, the metal film 10 may not be formed on the end surface 8a before the connection terminal 8.

Further, in the wafer components 12a to 12c which are mounted on the other main surface 11b of the wiring board 11, in the state in which they are respectively mounted, the height of the other main surface 11b of the wiring board 11 is different. In the embodiment, as shown in FIG. 1, the wafer component 12a has the lowest height from the other main surface 11b of the wiring substrate 11 among all the wafer components 12a to 12c. Further, the semiconductor substrate 9 and the connection terminal 8 are formed to have the same height from one main surface 11a of the wiring substrate 11 in a state of being mounted or erected.

Further, in one main surface 11a of the wiring substrate 11, the height Ht of the semiconductor substrate 9 (or the connection terminal 8) having the highest height from one main surface 11a of the wiring substrate 11 is smaller than the other main surface 11b of the wiring substrate 11. Part wafer 12a (11b the height of the lowest part on the other main surface of the wafer) from a low height H ₀ of the mode of the other main surface 11b of the semiconductor substrate 9 is formed (connection terminal 8).

Further, in the case where the respective components 9 and 12a to 12c are viewed in plan, the semiconductor substrate 9 has a larger area (cross-sectional area) than any of the other components (the respective wafer components 12a to 12c).

The resin layer 13a of one main surface 11a of the wiring board 11 is made of, for example, an epoxy resin, and as shown in FIG. 1, the semiconductor substrate is covered so that the non-opposing main surface of the semiconductor substrate 9 and the front end surface 8a of the connection terminal 8 are respectively exposed. 9 and formed by connecting the terminals 8. At this time, one main surface side of the wiring substrate 11 of the module 2 is formed as a surface of the resin layer 13a and a non-alignment of the semiconductor substrate 9. The main surface 9a and the front end surface 8a of the connection terminal 8 constitute the same state of the so-called surface height. Further, the state in which the surface height is the same can be formed by a polishing and grinding step which will be described later.

The resin layer 13b of the other main surface 11b of the wiring board 11 is made of, for example, the same type of epoxy resin as the resin layer 13a of the main surface 11a, and is covered as shown in Fig. 1 so that the wafer parts 12a to 12c are not exposed. Each wafer component is formed in all states.

Further, when the thickness of the resin layer 13b side is sufficiently thick with respect to the thickness of the resin layer 13a side or the like, when the bending of the module 2 is large, in order to suppress the bending, it is preferable to form the resin-based use line of the resin layer 13b. The coefficient of expansion is smaller than that of the resin forming the resin layer 13a.

(Manufacturing method of module 2)

Next, a method of manufacturing the module 2 of the present embodiment will be described with reference to Figs. 2 and 3 . In addition, FIG. 2 shows a part of each step of the manufacturing module 2, and FIG. 3 shows the steps of the subsequent FIG.

First, as shown in FIG. 2(a), a wiring board 11 is prepared in which a planar grounding ground electrode 14 and a wiring pattern are formed, and a semiconductor substrate is formed on both main surfaces 11a, 11b. 9 and the electrode 15 for forming the respective wafer parts 12a to 12c and the electrode 15a for forming a connection terminal (wiring substrate preparation step).

Next, as shown in FIG. 2(b), the semiconductor substrate 9, the connection terminal 8, and each of the wafer components 12a to 12c are mounted at positions corresponding to the electrode 15 for the wiring substrate 11 (parts and connection terminal mounting steps). . At this time, the semiconductor substrate 9 is placed face down on the main surface 11a of the wiring substrate 11, and the wafer components 12a to 12c are mounted on the wiring substrate 11 by a known surface mounting technique. The other main face 11b. Moreover, the electrode 15 for forming the connection terminal of the wiring substrate 11 is transmitted through the solder-connected pin-shaped connection terminal 8. As the connection terminal 8, for example, Cu or a columnar metal composed of an alloy containing Cu as a main component can be used.

Next, as shown in FIG. 2(c), the resin layer 13a covering the semiconductor substrate 9 and the connection terminal 8 is formed on one main surface 11a of the wiring substrate 11, and the respective wafer parts 12a to 12c are formed on the other main surface 11b. The resin layer 13b (resin layer forming step). At this time, the resin is applied or printed on the both main surfaces 11a and 11b by a distribution method or a printing method, and an oven set to a predetermined curing temperature (for example, 180 ° C in the case of an epoxy resin) is placed in the oven to make the resin. The two resin layers 13a, 13b are formed by hardening. Next, a module blank 18 in which the respective components (9, 12a to 12c) and the connection terminals 8 which are disposed on the both main faces 11a and 11b of the wiring substrate 11 are covered with a resin is formed.

Further, in addition to the above method, the connection terminal 8 may be formed by forming a columnar connection terminal 8 by a plating process before the semiconductor substrate 9 is mounted on one main surface 11a of the wiring substrate 11. In this case, the semiconductor substrate 9 is formed after the connection terminal 8 is formed, and the resin layer 13a is formed by coating the semiconductor substrate 9 and the connection terminal 8 on the main surface 11a with a resin.

In addition, after the semiconductor substrate 9 is formed, the resin layer 13a is formed, and the surface of the resin layer 13a is irradiated with a laser or the like, and the surface of the connection terminal forming electrode 15a is exposed to form a connection terminal. The concave portion is filled with a conductive paste (for example, an Ag paste or a Cu paste) by using a printing technique, or a conductor (for example, Cu) is formed by a plating treatment or the like, or a pillar is formed on one main surface 11a of the wiring substrate 11. The connection terminal 8 of the shape may also be used.

In the case where the connection terminal 8 is formed by plating treatment, unlike the case where the pin-shaped connection terminal 8 is configured, even if the connection terminal 8 is ground or ground, the solder of the joint portion of the wiring substrate 11 and the connection terminal 8 is not wetted. The side surface of the terminal 8 is connected and exposed from the resin layer 13a. Therefore, the connection terminals 8 having the fine diameter can be formed on the main surface 11a of one of the wiring boards 11 with high precision, and the connection terminals 8 can be narrowed.

Next, as shown in FIG. 3(a), the non-opposing main surface 9a of the semiconductor substrate 9 is used. The surface of the resin layer 13a of the module blank 18 is polished or ground (the grinding/grinding step) so that the front end surface 8a of the connection terminal 8 is exposed from the surface of the resin layer 13a. For example, in the case of polishing the surface of the resin layer 13a, the polishing can be carried out by grinding using a cup-shaped grindstone, polishing using a free abrasive grain, sand blasting or the like.

At this time, on the main surface side of the wiring board 11 of the module blank 18, the so-called surface height of the surface of the resin layer 13a, the non-opposing main surface 9a of the semiconductor substrate 9, and the front end surface 8a of the connection terminal 8 constitute the same surface. In the same state, the semiconductor substrate 9 and the connection terminal 8 are ground or ground together with the resin of the resin layer 13a.

Further, the height Ht to one of the wiring board 11 from the main surface of the semiconductor substrate 9 of the maximum height (or terminals 8) of the lowest 11a of the wiring board than from the other main surface 11 of the part 11b of the wafer height of the height H ₀ 12a In a low manner, the semiconductor substrate 9 (or the connection terminal 8) is ground or ground.

Further, it is preferable to perform polishing or grinding so as to form irregularities on the non-opposing main surface 9a of the semiconductor substrate 9. When the unevenness is formed on the non-opposing main surface 9a of the semiconductor substrate 9, when the metal film 10 is formed on the main surface 9a, irregularities can be formed in the metal film 10, and the surface area of the metal film 10 having high thermal conductivity can be increased. . Further, in the module 2 which is required to have a flatness on one side of the main surface 11a of the wiring board 11, the metal film 10 can be formed thick by filling the unevenness of the non-opposing main surface 9a of the semiconductor substrate 9 The surface of the metal film 10 is flat.

However, if the value of the average thickness (Ra) of the non-opposing principal surface 9a of the semiconductor substrate 9 is too small, it is difficult to form the metal film 10 by the plating treatment on the non-opposing main surface 9a of the semiconductor substrate 9, if the average thickness is coarse If the value of the degree (Ra) is too large, the semiconductor substrate 9 may be damaged. Therefore, the average roughness (Ra) of the surface of the non-opposing main surface 9a of the semiconductor substrate 9 is preferably in the range of 0.1 μm to 15 μm.

Next, as shown in FIG. 3(b), a metal film 10 is formed on the non-opposing main surface 9a of the semiconductor substrate 9 exposed from the surface of the resin layer 13 and the front end surface 8a of the connection terminal 8 (metal film forming step), and a module is manufactured. 2. At this time, the metal film 10 is formed using a plating process, a printing technique, or the like. For example, in the case of the plating treatment, the Ni layer is grown on the end surface 8a of the non-opposing main surface 9a of the semiconductor substrate 9 and the connection terminal 8, and the Au layer is grown thereon to form the metal film 10. Further, the metal film 10 of the non-opposing main surface 9a of the semiconductor substrate 9 need not be formed on the entire surface of the non-opposing main surface 9a of the semiconductor substrate 9, and may be formed in at least a part.

Further, in the case of manufacturing the module mounting device 1, one main surface 11a (non-opposing main surface 9a of the semiconductor substrate 9) and the mother substrate of the wiring substrate 11 of the module 2 manufactured by the manufacturing method of the module 2 are used. In the three-way manner, the metal film 10 formed on the non-opposing main surface 9a of the semiconductor substrate 9 and the front end surface 8a of the connection terminal 8 and the constituent electrode 7 formed on the surface of the mother substrate 3 are connected by solder or the like. .

According to the above-described embodiment, the resin layer 13a is formed on one main surface 11a of the wiring substrate 11 so that the non-opposing main surface of the semiconductor substrate 9 is not exposed to the opposite side of the wiring substrate 11, and is exposed from the resin layer 13a. The non-opposing main surface 9a of the semiconductor substrate 9 forms the metal film 10 having a higher thermal conductivity than the semiconductor substrate 9, and thus is compared with a conventional module in which only the non-opposing main surface 9a of the semiconductor substrate 9 is exposed from the surface of the resin layer 13a. The heat dissipation characteristics of the module 2 are improved.

Further, in the case where the non-opposing main surface 9a of the semiconductor substrate 9 is polished or ground so as to form irregularities on the non-opposing main surface 9a of the semiconductor substrate 9, the surface of the metal film 10 formed on the non-opposing main surface is also Since the unevenness can be formed, the surface area of the metal film 10 exposed from the surface of the resin layer 13a is increased, whereby the heat dissipation characteristics of the module 2 are further improved.

Further, by forming the ductility on the non-opposing main surface 9a of the semiconductor substrate 9 In the metal film 10, the non-opposing main surface 9a of the semiconductor substrate 9 exposed from the resin layer 13a is protected, so that the semiconductor substrate 9 can be prevented from being damaged by an external impact or the like.

Further, since the metal film 10 is formed of a Ni/Au film, the wettability of the solder when the module 2 and the mother substrate 3 are joined by the solder can be improved.

Further, the connection terminal 8 having a higher thermal conductivity than the resin of the resin layer 13a is vertically disposed on one main surface 11a of the wiring substrate 11 on which the semiconductor substrate 9 is mounted, and the front end surface 8a of the connection terminal 8 is also exposed from the surface of the resin layer 13a. Therefore, the heat dissipation characteristics of the module 2 are further improved. Moreover, the mother substrate 3 and the module 2 can be connected by the connection terminal 8.

Further, by polishing or grinding the surface of the resin layer 13a, the length of the connection terminal 8 connected to the ground electrode 5 of the mother substrate 3 (the height from one main surface 11a of the wiring substrate 11) can be shortened, which can be reduced due to By connecting the parasitic inductance of the terminal 8, the grounding can be enhanced.

In the present embodiment, only the semiconductor substrate 9 and the connection terminal 8 of the flip chip are disposed on one main surface 11a of the wiring substrate 11, and the wafer components 12a to 12c such as a wafer capacitor are disposed on the other main surface 11b.

In order to reduce the size of the module 2 (to reduce the mounting area of the wiring board 11), it is effective to arrange the components on the both main surfaces 11a and 11b of the wiring board 11. In addition, as in the conventional technique shown in FIG. 4, the non-opposing main surface 9a of the semiconductor substrate 9 and the connection terminal 8 are polished together to be highly lowered, which is also effective for miniaturizing the module 2. However, for example, when the semiconductor substrate 9 and the respective wafer components 12a to 12c are formed on the same main surface of the wiring substrate 11, the non-opposing main surface 9a of the semiconductor substrate 9 is less likely to be polished, and the height of the module 2 is lowered. The reason for this is that if the wafer capacitors or the wafer inductors, that is, the wafer components 12a to 12c, are ground and ground, the characteristics are deteriorated. Therefore, if it is configured as described above, the semiconductor substrate 9 cannot be separated from the same main body. The height of the face is lower than the height of each of the wafer parts 12a to 12c mounted on the same main surface.

Therefore, in the present embodiment, as described above, only one of the semiconductor substrates 9 and the connection terminals 8 of the flip chip structure which does not deteriorate even if the characteristics of the non-opposing main surface 9a are polished is provided on one main surface 11a of the wiring substrate 11, and The other main surface 11b is provided with each of the wafer components 12a to 12c such as a wafer capacitor or a chip inductor, and the surface of the resin layer 13a of one of the main surfaces 11a of the wiring substrate 11 is ground or ground together with the semiconductor substrate 9 and the connection terminal 8. This makes it possible to construct a module in which the height of the module 2 is lowered.

Further, the height Ht to one of the wiring board 11 from the main surface of the semiconductor substrate 9 of the maximum height (or terminals 8) of the lowest 11a of the wiring board than from the other main surface 11 of the part 11b of the wafer height of the height H ₀ 12a Since the semiconductor substrate 9 (or the connection terminal 8) is ground or ground in a low manner, the height of the module 2 can be surely lowered.

Further, the resin layer 13a is polished or ground so that the non-opposing main surface 9a of the semiconductor substrate 9 is exposed from the surface of the resin layer 13, and the conventional module in which the non-opposing main surface 9a of the semiconductor substrate 9 is covered with the resin layer 13a In contrast, when the module 2 is mounted on the mother substrate 3 (see FIG. 1 ), the distance between the non-opposing main surface 9 a of the semiconductor substrate 9 and the ground electrode 5 of the mother substrate 3 is increased, so that it is easy to generate from the module 2 . The heat is dissipated through the ground electrode 5 to improve the heat dissipation characteristics of the module 2. Further, since the metal film 10 of the semiconductor substrate 9 is connected to the constituent electrode 7 connected to the ground electrode 5 of the mother substrate 3 through the solder, the heat generated from the module 2 can be more efficiently dissipated.

Further, by bringing the distance between the non-opposing main surface 9a of the semiconductor substrate 9 and the ground electrode 5 of the mother substrate 3, the circuit surface of the semiconductor substrate 9 (opposite surface of the semiconductor substrate 9 and the wiring substrate 11) and grounding Since the distance between the electrodes 5 is close, the influence of unwanted noise radiated from the circuit surface of the semiconductor substrate 9 can be effectively suppressed, and the semiconductor substrate 9 can be suppressed from being irradiated from the outside. No need for noise.

Moreover, the metal film 10 formed on the non-opposing main surface 9a of the semiconductor substrate 9 is used for connection between the module 2 and the mother substrate 3, so that the end face 8a and the semiconductor substrate 9 are not opposite to each other before the connection terminal 8. The metal film 10 formed on the surface 9a can be connected to the mother substrate 3 and the module 2, so that the module 2 and the mother substrate can be improved compared with the conventional module mounting device in which only the connection terminal 8 of the module 2 is connected to the mother substrate 3. 3 connection strength.

Further, in the case where irregularities are formed on the surface of the metal film 10 of the semiconductor substrate 9, since the connection area between the metal film 10 of the semiconductor substrate 9 and the mother substrate 3 is increased, the connection strength between the module 2 and the mother substrate 3 can be further improved.

When the resin layer 13a of one main surface 11a of the wiring substrate 11 is polished, the amount of resin forming the resin layer 13a is smaller than the amount of resin of the resin layer 13b of the other main surface 11b, and therefore the resin layers 13a, 13b are formed. The contraction stress generated separately is unbalanced, and the wiring substrate 11 is bent. However, the resin-hardened semiconductor substrate 9 which is formed of the two resin layers 13a and 13b is formed on each of the two main faces 11a and 11b of the wiring substrate 11. Since the area (cross-sectional area) in the plan view of the components 9 and 12a to 12c is the largest, it is possible to suppress the bending of the wiring board 11 caused by the loss of the contraction stress of the two resin layers 13a and 13b.

Further, since the resin forming the resin layer 13b is smaller than the resin forming the resin layer 13a, the bending of the wiring substrate 11 can be further suppressed.

The present invention is not limited to the above embodiments, and various modifications can be made without departing from the scope of the invention.

For example, in each of the above embodiments, the number of the semiconductor substrates 9 laminated on one main surface 11a of the wiring substrate 11 may be plural.

Further, the area of the semiconductor substrate 9 in a plan view may be smaller than the area of any of the other components. Further, the component which is lower in height after the mounting and the height of the semiconductor substrate 9 after polishing or grinding may be disposed on one main surface 11a of the wiring substrate 11. In other words, the semiconductor substrate 9 on which the main surface 9a can be polished or ground may be disposed or disposed on one main surface 11a of the wiring substrate 11. Further, in order to reduce the mounting area of the wiring substrate 11, each design is appropriately designed. The configuration of the component can be configured.

Further, only the wafer components 12a to 12c such as a wafer capacitor or a chip inductor are mounted on the other main surface 11b of the wiring substrate 11, but the semiconductor substrate 9 is mounted and mounted on the main surface 11a on the other main surface 11b. Other semiconductor substrates 9 which are the same or different may also be used.

Further, the metal film 10 may be formed using, for example, a conductive paste, and may be formed by sputtering or vapor deposition.

Further, the number of the connection terminals 8 formed on one main surface 11a of the wiring substrate 11 may be any, and the connection terminal 8 may be disposed on the other main surface 11b of the wiring substrate 11. Further, the connection terminal 8 does not have to be disposed on one main surface 11a of the wiring substrate 11. In other words, the connection terminal 8 and the semiconductor substrate 9 may be disposed on different main faces of the wiring substrate 11. Further, when the connection terminal and the semiconductor substrate 9 are disposed on different main faces of the wiring substrate 11, the metal film is formed not only on the non-opposing main surface 9a of the semiconductor substrate 9, but also around the resin layer 13b, and can function as The shielding layer of module 2.

Further, in each of the above embodiments, the respective wafer components 12a to 12c may not be mounted on the other main surface 11b of the wiring board 11.

Further, the resin layers 13a and 13b are not necessarily required to be provided on the two main faces 11a and 11b of the wiring board 11.

In the above-described embodiment, each surface is formed such that the non-opposing main surface 9a of the semiconductor substrate 9, the front end surface 8a of the connection terminal 8, and the so-called surface height of the surface of the resin layer 13a are the same, but the resin layer is formed. The surface height of 13a may be formed to be lower than the height of the semiconductor substrate 9 (non-opposing main surface 9a) and the connection terminal 8 (front end surface 8a). In other words, the resin layer 13a may be formed so that the end portion of the semiconductor substrate 9 and the end portion of the connection terminal 8 protrude from the surface of the resin layer 13a. By forming the resin layer 13a in the above manner, the end portions of the semiconductor substrate 9 and the connection terminal 8 each having a higher thermal conductivity than the resin of the resin layer 13a are exposed from the surface of the resin layer 13a, so that the heat dissipation characteristics of the module 2 are further improved.

Further, in the present invention, if the semiconductor substrate 9 is formed by laminating a main surface 11a of the wiring substrate 11, it can be applied to any module.

1‧‧‧Modular carrying device

2‧‧‧ modules

3‧‧‧ mother substrate

4‧‧‧ bottom filling resin layer

5‧‧‧Ground electrode

6‧‧‧through hole conductor

7‧‧‧Electrical electrode

8‧‧‧Connecting terminal

8a‧‧‧ front end

9‧‧‧Semiconductor substrate

9a‧‧‧non-opposite main face

10‧‧‧Metal film

11‧‧‧Wiring substrate

11a‧‧‧One main face

11b‧‧‧The other main face

12a, 12b, 12c‧‧‧ wafer parts

13a, 13b‧‧‧ resin layer

14‧‧‧Ground electrode

15‧‧‧Electrical electrode

15a‧‧‧electrode

Claims (7)

A high frequency module comprising: a wiring substrate; a semiconductor substrate mounted on one main surface of the wiring substrate; and a resin layer covered with the non-opposing main surface of the semiconductor substrate not facing the wiring substrate The semiconductor substrate is formed on the one main surface, and a metal film is formed on at least a portion of the non-opposing main surface of the semiconductor substrate. The high frequency module of claim 1, wherein the surface of the metal film is formed with irregularities. The high frequency module of claim 1 or 2, wherein the metal film is formed by plating. The high frequency module according to claim 1 or 2, further comprising a columnar connection terminal erected on the one main surface; the front end surface of the connection terminal is exposed from a surface of the resin layer. The high frequency module of claim 3, further comprising a columnar connection terminal erected on the main surface; the front end surface of the connection terminal is exposed from a surface of the resin layer. A high-frequency module mounting device comprising: the high-frequency module according to any one of claims 1 to 5; and a mother substrate connected to the metal film of the high-frequency module. The high frequency module mounting device according to claim 6, wherein the metal film of the high frequency module is connected to a ground electrode formed on the ground of the mother substrate.