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TWI514039B - Pixel structure - Google Patents

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TWI514039B
TWI514039B TW103101165A TW103101165A TWI514039B TW I514039 B TWI514039 B TW I514039B TW 103101165 A TW103101165 A TW 103101165A TW 103101165 A TW103101165 A TW 103101165A TW I514039 B TWI514039 B TW I514039B
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Taiwan
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edge
spacer
region
pixel structure
channel layer
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TW103101165A
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Chinese (zh)
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TW201527835A (en
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Pi Chun Yeh
Ching Sheng Cheng
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Au Optronics Corp
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Priority to CN201410124247.4A priority patent/CN103838039A/en
Publication of TW201527835A publication Critical patent/TW201527835A/en
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Publication of TWI514039B publication Critical patent/TWI514039B/en

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Description

畫素結構Pixel structure

本發明是有關於一種畫素結構,且特別是有關於一種具有間隙物的畫素結構。The present invention relates to a pixel structure, and more particularly to a pixel structure having a spacer.

隨著科技的進步,體積龐大的陰極射線管(Cathode Ray Tube,CRT)顯示器已經漸漸地走入歷史。因此,液晶顯示器(Liquid Crystal Display,LCD)、有機發光二極體顯示器(Organic Light Emitting Diode display,OLED display)、電泳顯示器(Electro-Phoretic Display,EPD)、電漿顯示器(Plasma Display Panel,PDP)等顯示面板則逐漸地成為未來顯示器之主流。With the advancement of technology, the huge cathode ray tube (CRT) display has gradually entered history. Therefore, a liquid crystal display (LCD), an organic light emitting diode display (OLED display), an electrophoretic display (EPD), a plasma display panel (PDP) Display panels are gradually becoming the mainstream of future displays.

習知的液晶顯示器可包括多個間隙物,配置在畫素陣列基板與對向基板之間,且對應畫素陣列基板的主動元件設置。由於主動元件(例如是薄膜電晶體)為多層堆疊而成的結構,因此在間隙物與主動元件接觸處部分間隙物會被主動元件壓縮。再者,隨著元件尺寸持續縮小的趨勢,間隙物與主動元件之間的對位更加困難。舉例來說,當間隙物配置在對向基板上時,畫素陣列基板與對向基板組立時的對位容易造成對位誤差。當間隙物配置在畫 素陣列基板上時,黃光光罩曝光顯影時的對位亦容易造成對位誤差。當間隙物與主動元件之間具有對位誤差(例如間隙物上移、下移或旋轉)時,間隙物與主動元件的高度最高的區域之間的重疊面積會隨間隙物的偏移而改變,因此容易使間隙物所受到的壓縮力實質上不同,進而導致間隙物的結構不穩定以及液晶顯示器的不同區域有耐壓程度不均勻的問題。The conventional liquid crystal display may include a plurality of spacers disposed between the pixel array substrate and the opposite substrate, and the active element arrangement of the corresponding pixel array substrate. Since the active component (for example, a thin film transistor) is a multi-layered structure, a part of the spacer is compressed by the active component at the contact of the spacer with the active component. Moreover, as the component size continues to shrink, the alignment between the spacer and the active component is more difficult. For example, when the spacers are disposed on the opposite substrate, the alignment of the pixel array substrate and the opposite substrate is likely to cause a registration error. When the spacer is placed in the painting When it is on the array substrate, the alignment of the yellow mask during exposure and development is also likely to cause alignment error. When there is a registration error between the spacer and the active component (for example, the spacer moves up, down, or rotates), the overlap area between the spacer and the region with the highest height of the active component changes with the offset of the spacer. Therefore, it is easy to make the compressive force received by the spacer substantially different, which leads to instability of the structure of the spacer and unevenness of the pressure resistance in different regions of the liquid crystal display.

本發明提供一種畫素結構,其可使顯示面板的不同區域具有均勻的耐壓程度。The present invention provides a pixel structure that allows uniform regions of the display panel to have a uniform withstand voltage.

本發明提出一種畫素結構,包括資料線、掃描線、主動元件、畫素電極以及間隙物。主動元件與資料線以及掃描線電性連接,且主動元件包括閘極、通道層、源極以及汲極,其中閘極、通道層以及源極或汲極在垂直投影方向上的重疊部分為第一區域。畫素電極與汲極電性連接。間隙物對應主動元件設置,其中間隙物覆蓋主動元件之第一區域,間隙物具有相對設置的第一邊緣與第二邊緣,第一邊緣與第二邊緣位於第一區域外。The present invention provides a pixel structure including a data line, a scan line, an active element, a pixel electrode, and a spacer. The active component is electrically connected to the data line and the scan line, and the active component includes a gate, a channel layer, a source, and a drain, wherein the gate, the channel layer, and the overlap of the source or the drain in the vertical projection direction are An area. The pixel electrode is electrically connected to the drain. The spacer corresponds to the active component arrangement, wherein the spacer covers the first region of the active component, the spacer has a first edge and a second edge disposed opposite to each other, and the first edge and the second edge are located outside the first region.

基於上述,在本發明的畫素結構中,當間隙物與主動元件之間具有對位誤差時,畫素結構的間隙物與主動元件的高度最高的區域之間的重疊面積不會隨間隙物的偏移而改變,則間隙物所受到的壓縮力實質上為固定值,進而可使間隙物的結構穩定且顯示面板的不同區域具有均勻的耐壓程度。Based on the above, in the pixel structure of the present invention, when there is a registration error between the spacer and the active element, the overlapping area between the spacer of the pixel structure and the region of the highest height of the active element does not follow the spacer. When the offset is changed, the compressive force received by the spacer is substantially a fixed value, so that the structure of the spacer can be stabilized and different regions of the display panel have a uniform withstand voltage.

為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。The above described features and advantages of the invention will be apparent from the following description.

10‧‧‧畫素陣列基板10‧‧‧ pixel array substrate

12、22‧‧‧基板12, 22‧‧‧ substrate

14‧‧‧畫素陣列14‧‧‧ pixel array

20‧‧‧對向基板20‧‧‧ opposite substrate

24‧‧‧電極層24‧‧‧electrode layer

30‧‧‧顯示介質30‧‧‧Display media

50‧‧‧顯示面板50‧‧‧ display panel

100、100’‧‧‧畫素結構100, 100’‧‧‧ pixel structure

104、106‧‧‧絕緣層104, 106‧‧‧Insulation

108‧‧‧接觸窗108‧‧‧Contact window

110‧‧‧第一區域110‧‧‧First area

120‧‧‧第二區域120‧‧‧Second area

130‧‧‧第三區域130‧‧‧ Third Area

140、140’‧‧‧間隙物140, 140’ ‧ ‧ spacers

140a‧‧‧第一邊緣140a‧‧‧ first edge

140b‧‧‧第二邊緣140b‧‧‧ second edge

140c、140c’‧‧‧第三邊緣140c, 140c’‧‧‧ third edge

140d、140d’‧‧‧第四邊緣140d, 140d’‧‧‧ fourth edge

CH‧‧‧通道層CH‧‧‧ channel layer

D‧‧‧汲極D‧‧‧汲

d1、d2、d3、d4‧‧‧最短距離D1, d2, d3, d4‧‧‧ shortest distance

DL‧‧‧資料線DL‧‧‧ data line

G‧‧‧閘極G‧‧‧ gate

PE‧‧‧畫素電極PE‧‧‧ pixel electrode

R‧‧‧區域R‧‧‧ area

S‧‧‧源極S‧‧‧ source

SL‧‧‧掃描線SL‧‧‧ scan line

T‧‧‧主動元件T‧‧‧ active components

I-I’、II-II’‧‧‧線I-I’, II-II’‧‧‧ line

圖1是依照本發明的顯示面板的剖面示意圖。1 is a schematic cross-sectional view of a display panel in accordance with the present invention.

圖2A是依照本發明的第一實施例的畫素結構的上視示意圖。2A is a top plan view of a pixel structure in accordance with a first embodiment of the present invention.

圖2B是圖2A的區域R的放大示意圖。Fig. 2B is an enlarged schematic view of a region R of Fig. 2A.

圖2C是當圖2B的間隙物與主動元件之間具有對位誤差時的上視示意圖。Figure 2C is a top plan view of the spacer of Figure 2B with a registration error between the active elements.

圖3是圖2B中沿線I-I’的主動元件的剖面示意圖。Figure 3 is a cross-sectional view of the active element taken along line I-I' of Figure 2B.

圖4是圖2B中沿線II-II’的主動元件的剖面示意圖。Figure 4 is a schematic cross-sectional view of the active element taken along line II-II' of Figure 2B.

圖5A及圖5B是當間隙物與通道層的形狀不同時的畫素結構的上視示意圖。5A and 5B are top schematic views of the pixel structure when the shape of the spacer and the channel layer are different.

圖6A是依照本發明的第二實施例的畫素結構的上視示意圖。Figure 6A is a top plan view of a pixel structure in accordance with a second embodiment of the present invention.

圖6B是圖6A的區域R的放大示意圖。Fig. 6B is an enlarged schematic view of a region R of Fig. 6A.

圖7是圖6B中沿線I-I’的主動元件的剖面示意圖。Figure 7 is a cross-sectional view of the active element taken along line I-I' of Figure 6B.

圖8是圖6B中沿線II-II’的主動元件的剖面示意圖。Figure 8 is a cross-sectional view of the active element taken along line II-II' of Figure 6B.

圖1是依照本發明的顯示面板的剖面示意圖。請參照圖1,顯示面板50包括畫素陣列基板10、對向基板20以及顯示介質 30。顯示面板50例如是液晶顯示面板或是其他形式之顯示面板。1 is a schematic cross-sectional view of a display panel in accordance with the present invention. Referring to FIG. 1 , the display panel 50 includes a pixel array substrate 10 , a counter substrate 20 , and a display medium. 30. The display panel 50 is, for example, a liquid crystal display panel or other form of display panel.

畫素陣列基板10包括基板12以及畫素陣列14。基板12之材質可為玻璃、石英、有機聚合物或是金屬等等。畫素陣列14配置在基板12上,且畫素陣列14包括多個畫素結構。關於畫素結構之設計將於後文中詳細地描述。The pixel array substrate 10 includes a substrate 12 and a pixel array 14. The material of the substrate 12 may be glass, quartz, organic polymer or metal or the like. The pixel array 14 is disposed on the substrate 12, and the pixel array 14 includes a plurality of pixel structures. The design of the pixel structure will be described in detail later.

對向基板20位於畫素陣列基板10的對向側。對向基板20包括基板22以及電極層24。基板22之材質可為玻璃、石英或有機聚合物等等。電極層24是全面地覆蓋於基板22上。電極層24為透明導電層,其材質包括金屬氧化物,例如是銦錫氧化物或者是銦鋅氧化物。The opposite substrate 20 is located on the opposite side of the pixel array substrate 10. The opposite substrate 20 includes a substrate 22 and an electrode layer 24. The material of the substrate 22 may be glass, quartz or an organic polymer or the like. The electrode layer 24 is entirely covered on the substrate 22. The electrode layer 24 is a transparent conductive layer made of a metal oxide such as indium tin oxide or indium zinc oxide.

顯示介質30位於畫素陣列基板10與對向基板20之間。當顯示面板50為液晶顯示面板時,顯示介質30例如是液晶分子。The display medium 30 is located between the pixel array substrate 10 and the opposite substrate 20. When the display panel 50 is a liquid crystal display panel, the display medium 30 is, for example, liquid crystal molecules.

圖2A是依照本發明的第一實施例的畫素結構的上視示意圖,圖2B是圖2A的區域R的放大示意圖,圖2C是當圖2B的間隙物與主動元件之間具有對位誤差時的上視示意圖,而圖3與圖4分別是圖2B中沿線I-I’以及線II-II’的主動元件的剖面示意圖。為了清楚地說明本發明之實施例,圖2A至圖4僅繪示出圖1之畫素陣列14的其中一個畫素結構,此領域技術人員應可以理解,圖1之畫素陣列14實際上即是由多個圖2A至圖4所示之畫素結構組成陣列形式所構成。2A is a top plan view of a pixel structure in accordance with a first embodiment of the present invention, FIG. 2B is an enlarged schematic view of a region R of FIG. 2A, and FIG. 2C is a alignment error between the spacer and the active device of FIG. 2B. FIG. 3 and FIG. 4 are schematic cross-sectional views of the active elements along line II' and line II-II' in FIG. 2B, respectively. In order to clearly illustrate an embodiment of the present invention, FIGS. 2A through 4 depict only one of the pixel structures of the pixel array 14 of FIG. 1, and those skilled in the art will appreciate that the pixel array 14 of FIG. 1 is actually That is, it is composed of a plurality of pixel structures as shown in FIG. 2A to FIG.

請同時參照圖2A至圖4,畫素結構100包括資料線DL、掃描線SL、主動元件T、畫素電極PE以及間隙物140。Referring to FIG. 2A to FIG. 4 simultaneously, the pixel structure 100 includes a data line DL, a scan line SL, an active device T, a pixel electrode PE, and a spacer 140.

資料線DL與掃描線SL位於基板12上。資料線DL與掃描線SL的延伸方向不相同,較佳的是資料線DL的延伸方向與掃描線SL的延伸方向垂直。此外,資料線DL與掃描線SL是位於不相同的膜層,且兩者之間夾有絕緣層(未繪示)。資料線DL與掃描線SL主要用來傳遞驅動此畫素結構100的驅動訊號。資料線DL與掃描線SL一般是使用金屬材料。然而,本發明不限於此。根據其他實施例,資料線DL與掃描線SL也可以使用其他導電材料例如是包括合金、金屬材料的氧化物、金屬材料的氮化物、金屬材料的氮氧化物或是金屬材料與其它導電材料的堆疊層。The data line DL and the scan line SL are located on the substrate 12. The data line DL is different from the extending direction of the scanning line SL. It is preferable that the extending direction of the data line DL is perpendicular to the extending direction of the scanning line SL. In addition, the data line DL and the scan line SL are different in the film layer, and an insulating layer (not shown) is interposed therebetween. The data line DL and the scan line SL are mainly used to transmit a driving signal for driving the pixel structure 100. The data line DL and the scan line SL are generally made of a metal material. However, the invention is not limited thereto. According to other embodiments, the data line DL and the scan line SL may also use other conductive materials such as an alloy, an oxide of a metal material, a nitride of a metal material, an oxynitride of a metal material, or a metal material and other conductive materials. Stack layers.

主動元件T位於基板12上,且主動元件T與資料線DL以及掃描線SL電性連接。在此,主動元件T例如是薄膜電晶體,其包括閘極G、通道層CH、源極S以及汲極D。閘極G與掃描線SL電性連接,源極S與資料線DL電性連接。換言之,當有控制訊號輸入掃描線SL時,掃描線SL與閘極G之間會電性導通;當有控制訊號輸入資料線DL時,資料線DL會與源極S電性導通。通道層CH位於閘極G之上方並且位於源極S與汲極D的下方。本實施例之主動元件T是以底部閘極型薄膜電晶體為例來說明,但本發明不限於此。在其他實施例中,主動元件T也可以是頂部閘極型薄膜電晶體。The active device T is located on the substrate 12, and the active device T is electrically connected to the data line DL and the scan line SL. Here, the active element T is, for example, a thin film transistor comprising a gate G, a channel layer CH, a source S and a drain D. The gate G is electrically connected to the scan line SL, and the source S is electrically connected to the data line DL. In other words, when the control signal is input to the scan line SL, the scan line SL and the gate G are electrically connected; when the control signal is input to the data line DL, the data line DL is electrically connected to the source S. The channel layer CH is located above the gate G and below the source S and the drain D. The active device T of the present embodiment is described by taking a bottom gate type thin film transistor as an example, but the present invention is not limited thereto. In other embodiments, the active device T can also be a top gate type thin film transistor.

在本實施例中,主動元件T具有第一區域110、第二區域120以及第三區域130。第一區域110為閘極G、通道層CH以及源極S或汲極D在垂直投影方向上的重疊部分。亦即,第一區域 110為主動元件T的高度最高的區域。第二區域120為閘極G以及源極S或汲極D在垂直投影方向上的重疊部分。第三區域130為閘極G以及通道層CH在垂直投影方向上的重疊部分。In the present embodiment, the active device T has a first region 110, a second region 120, and a third region 130. The first region 110 is an overlapping portion of the gate G, the channel layer CH, and the source S or the drain D in the vertical projection direction. That is, the first area 110 is the highest height region of the active component T. The second region 120 is an overlapping portion of the gate G and the source S or the drain D in the vertical projection direction. The third region 130 is an overlapping portion of the gate G and the channel layer CH in the vertical projection direction.

在主動元件T的閘極G上更覆蓋有絕緣層104,其又可稱為閘極絕緣層。另外,在主動元件T上可更覆蓋有另一絕緣層106,其又可稱為保護層。絕緣層104與絕緣層106的材料例如是包括無機材料、有機材料或上述之組合。無機材料例如是包括氧化矽、氮化矽、氮氧化矽或上述至少二種材料的堆疊層。The gate G of the active device T is further covered with an insulating layer 104, which may also be referred to as a gate insulating layer. In addition, another insulating layer 106 may be further covered on the active device T, which may also be referred to as a protective layer. The material of the insulating layer 104 and the insulating layer 106 is, for example, an inorganic material, an organic material, or a combination thereof. The inorganic material is, for example, a stacked layer including cerium oxide, cerium nitride, cerium oxynitride or at least two of the above materials.

畫素電極PE與主動元件T的汲極D電性連接。更詳細來說,畫素電極PE可透過接觸窗108與主動元件T的汲極D電性連接,其中接觸窗108穿過絕緣層106。畫素電極PE例如是透明導電層,其包括金屬氧化物,例如是銦錫氧化物、銦鋅氧化物、鋁錫氧化物、鋁鋅氧化物、銦鍺鋅氧化物、或其它合適的氧化物、或者是上述至少二者之堆疊層。The pixel electrode PE is electrically connected to the drain D of the active device T. In more detail, the pixel electrode PE can be electrically connected to the drain D of the active device T through the contact window 108, wherein the contact window 108 passes through the insulating layer 106. The pixel electrode PE is, for example, a transparent conductive layer comprising a metal oxide such as indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, indium antimony zinc oxide, or other suitable oxide. Or a stacked layer of at least two of the above.

間隙物140配置在畫素陣列基板10的畫素陣列14與對向基板20的電極層24之間。在本實施例中,間隙物140例如是先形成在對向基板20上,再將畫素陣列基板10與對向基板20組立以使間隙物140位於畫素陣列基板10與對向基板20之間,但本發明不限於此。在其他實施例中,間隙物140亦可以是先形成在畫素陣列基板10上,再將畫素陣列基板10與對向基板20組立。再者,間隙物140對應主動元件T設置,其中間隙物140至少覆蓋主動元件T之第一區域110。間隙物140的材料例如是光阻或其 他合適的材料。在本實施例中,間隙物140為矩形間隙物,且通道層CH為矩形通道層。因此,間隙物140具有兩個短邊以及兩個長邊。所述兩個短邊為第一邊緣140a以及第二邊緣140b,且所述兩個長邊為第三邊緣140c以及第四邊緣140d。The spacer 140 is disposed between the pixel array 14 of the pixel array substrate 10 and the electrode layer 24 of the opposite substrate 20. In the embodiment, the spacers 140 are first formed on the opposite substrate 20, and then the pixel array substrate 10 and the opposite substrate 20 are assembled such that the spacers 140 are located on the pixel array substrate 10 and the opposite substrate 20. However, the invention is not limited thereto. In other embodiments, the spacers 140 may be formed on the pixel array substrate 10 first, and then the pixel array substrate 10 and the opposite substrate 20 may be assembled. Furthermore, the spacer 140 is disposed corresponding to the active device T, wherein the spacer 140 covers at least the first region 110 of the active device T. The material of the spacer 140 is, for example, a photoresist or His suitable material. In this embodiment, the spacers 140 are rectangular spacers, and the channel layer CH is a rectangular channel layer. Therefore, the spacer 140 has two short sides and two long sides. The two short sides are a first edge 140a and a second edge 140b, and the two long sides are a third edge 140c and a fourth edge 140d.

第一邊緣140a以及第二邊緣140b與資料線DL實質上朝同一方向延伸,且彼此平行。第一邊緣140a與第二邊緣140b相對設置,且第一邊緣140a與第二邊緣140b位於第一區域110外。更詳細來說,在本實施例中,第一邊緣140a不與源極S重疊且不與第二區域120重疊,而第二邊緣140b與汲極D重疊且不與第二區域120重疊。然而,本發明不限於此。在其他實施例中,亦可以是第一邊緣140a與源極S(或資料線DL)重疊且不與第二區域120重疊,而第二邊緣140b與汲極D重疊且不與第二區域120重疊。再者,間隙物140之第一邊緣140a以及第二邊緣140b與主動元件T之第二區域120之間的最短距離d1、d2分別為1μm以上。然而,本發明不限於此。在其他實施例中,最短距離d1、d2亦可以是其他數值,只要最短距離d1、d2至少大於間隙物140與主動元件T的對位誤差值即可。The first edge 140a and the second edge 140b extend substantially in the same direction as the data lines DL and are parallel to each other. The first edge 140a is disposed opposite the second edge 140b, and the first edge 140a and the second edge 140b are located outside the first region 110. In more detail, in the present embodiment, the first edge 140a does not overlap the source S and does not overlap the second region 120, and the second edge 140b overlaps the drain D and does not overlap the second region 120. However, the invention is not limited thereto. In other embodiments, the first edge 140a may overlap with the source S (or the data line DL) and not overlap with the second region 120, and the second edge 140b overlaps with the drain D and not with the second region 120. overlapping. Furthermore, the shortest distances d1 and d2 between the first edge 140a and the second edge 140b of the spacer 140 and the second region 120 of the active device T are each 1 μm or more. However, the invention is not limited thereto. In other embodiments, the shortest distances d1 and d2 may be other values as long as the shortest distances d1 and d2 are at least larger than the alignment error values of the spacer 140 and the active device T.

第三邊緣140c以及第四邊緣140d沿著掃描線SL之延伸方向延伸,且彼此平行。第三邊緣140c以及第四邊緣140d與通道層CH的長邊彼此正交。第三邊緣140c與第四邊緣140d相對設置,且第三邊緣140c與第四邊緣140d位於第一區域110外。更詳細來說,第三邊緣140c與第四邊緣140d位於第三區域130中。 間隙物140部分地覆蓋通道層CH,且第三邊緣140c與第四邊緣140d與通道層CH重疊。再者,間隙物140之第三邊緣140c以及第四邊緣140d與主動元件T之第一區域110之間的最短距離d3、d4分別為1μm以上。然而,本發明不限於此。在其他實施例中,最短距離d3、d4亦可以是其他數值,只要最短距離d3、d4至少大於間隙物140與主動元件T的對位誤差值即可。此外,上述最短距離d1、d2、d3及d4可以是相同的或不同的,本發明不特別限定。也就是說,在本實施例中,間隙物140至少覆蓋主動元件T之第一區域110(亦即,主動元件T的高度最高的區域)。再者,間隙物140的第一邊緣140a、第二邊緣140b、第三邊緣140c以及第四邊緣140d皆位於第一區域110外,且上述邊緣與第一區域110之間分別具有最短距離d1、d2、d3及d4,其中所述最短距離d1、d2、d3及d4至少要大於間隙物140與主動元件T的對位誤差值。The third edge 140c and the fourth edge 140d extend along the extending direction of the scanning line SL and are parallel to each other. The third edge 140c and the fourth edge 140d are orthogonal to the long sides of the channel layer CH. The third edge 140c is disposed opposite to the fourth edge 140d, and the third edge 140c and the fourth edge 140d are located outside the first region 110. In more detail, the third edge 140c and the fourth edge 140d are located in the third region 130. The spacer 140 partially covers the channel layer CH, and the third edge 140c overlaps the fourth edge 140d with the channel layer CH. Furthermore, the shortest distances d3 and d4 between the third edge 140c and the fourth edge 140d of the spacer 140 and the first region 110 of the active device T are each 1 μm or more. However, the invention is not limited thereto. In other embodiments, the shortest distances d3 and d4 may be other values as long as the shortest distances d3 and d4 are at least larger than the alignment error values of the spacers 140 and the active device T. Further, the shortest distances d1, d2, d3, and d4 described above may be the same or different, and the present invention is not particularly limited. That is, in the present embodiment, the spacer 140 covers at least the first region 110 of the active device T (that is, the region where the height of the active device T is the highest). Moreover, the first edge 140a, the second edge 140b, the third edge 140c, and the fourth edge 140d of the spacer 140 are all located outside the first region 110, and the edge and the first region 110 have the shortest distance d1, respectively. D2, d3 and d4, wherein the shortest distances d1, d2, d3 and d4 are at least larger than the alignment error value of the spacer 140 and the active element T.

值得一提的是,在本實施例中,當間隙物140與主動元件T之間具有對位誤差(例如間隙物140上移、下移或旋轉)時,則間隙物140與主動元件T之第一區域110(亦即,主動元件T的高度最高的區域)的重疊面積實質上可以維持固定值,其中所述重疊面積與第一區域110的面積相同。亦即,間隙物140被主動元件T之第一區域110所壓縮的面積實質上可以維持固定值,其中所述間隙物140被主動元件T之第一區域110所壓縮的面積也就是上述的重疊面積。It is worth mentioning that, in this embodiment, when there is a registration error between the spacer 140 and the active device T (for example, the spacer 140 moves up, down, or rotates), the spacer 140 and the active device T The overlapping area of the first region 110 (i.e., the region of the highest height of the active device T) may substantially maintain a fixed value, wherein the overlapping area is the same as the area of the first region 110. That is, the area where the spacer 140 is compressed by the first region 110 of the active device T can substantially maintain a fixed value, wherein the area where the spacer 140 is compressed by the first region 110 of the active device T is also the overlap described above. area.

舉例來說,圖2C是當圖2B的間隙物140與主動元件T 之間具有對位誤差時的上視示意圖。圖2C之實施例與上述圖2B之實施例相似,因此相同或相似的元件以相同或相似的符號表示,且不再重複說明。如圖2C所示,當間隙物140與主動元件T之間具有對位誤差而使間隙物140向下偏移時,則圖2C的間隙物140與第一區域110的重疊面積(亦即,第一區域110的面積)實質上相等於圖2B(無對位誤差)的間隙物140與第一區域110的重疊面積(亦即,第一區域110的面積)。也就是說,本發明具有最佳化的間隙物140的設計,以使畫素結構100的間隙物140與主動元件T的高度最高的區域(亦即,第一區域110)之間的重疊面積不會隨間隙物140的偏移而改變,進而可使間隙物140的結構穩定且顯示面板50的不同區域具有均勻的耐壓程度。For example, FIG. 2C is the spacer 140 and the active device T of FIG. 2B. A schematic diagram of the top view with a misalignment between the two. The embodiment of FIG. 2C is similar to the embodiment of FIG. 2B described above, and thus the same or similar elements are designated by the same or similar symbols and the description is not repeated. As shown in FIG. 2C, when there is a registration error between the spacer 140 and the active device T to cause the spacer 140 to be shifted downward, the overlapping area of the spacer 140 of FIG. 2C and the first region 110 (ie, The area of the first region 110 is substantially equal to the overlap area of the spacer 140 and the first region 110 of FIG. 2B (without the alignment error) (ie, the area of the first region 110). That is, the present invention has an optimized spacer 140 design such that the overlap area between the spacer 140 of the pixel structure 100 and the region of the highest height of the active device T (i.e., the first region 110) It does not change with the offset of the spacer 140, so that the structure of the spacer 140 can be stabilized and different regions of the display panel 50 have a uniform withstand voltage.

還值得一提的是,間隙物140與通道層CH的形狀不限於矩形。在其他實施例中,間隙物140與通道層CH可各自為矩形、正方形、梯形、多邊形、不規則形或其他合適的形狀。舉例來說,圖5A及圖5B是當間隙物140與通道層CH的形狀不同時的畫素結構100的上視示意圖。圖5A與圖5B之實施例與上述圖2A之實施例相似,因此相同或相似的元件以相同或相似的符號表示,且不再重複說明。如圖5A所示,間隙物140可為矩形且通道層CH可為多邊形。如圖5B所示,間隙物140可為多邊形且通道層CH可為矩形。因此,間隙物140的形狀與通道層CH的形狀可以是相同的或不同的各種形狀,只要當間隙物140與主動元件T之間具有對位誤差時間隙物140與第一區域110的重疊面積實質上 可以維持固定值即可。It is also worth mentioning that the shape of the spacer 140 and the channel layer CH is not limited to a rectangle. In other embodiments, the spacers 140 and the channel layers CH may each be rectangular, square, trapezoidal, polygonal, irregular, or other suitable shape. For example, FIGS. 5A and 5B are top plan views of the pixel structure 100 when the shape of the spacer 140 and the channel layer CH are different. The embodiment of Figures 5A and 5B is similar to the embodiment of Figure 2A described above, and therefore the same or similar elements are designated by the same or similar symbols and the description is not repeated. As shown in FIG. 5A, the spacers 140 may be rectangular and the channel layer CH may be polygonal. As shown in FIG. 5B, the spacers 140 may be polygonal and the channel layer CH may be rectangular. Therefore, the shape of the spacer 140 and the shape of the channel layer CH may be the same or different various shapes as long as the overlapping area of the spacer 140 and the first region 110 when there is a registration error between the spacer 140 and the active device T essentially You can maintain a fixed value.

圖6A是依照本發明的第二實施例的畫素結構的上視示意圖,圖6B是圖6A的區域R的放大示意圖,而圖7與圖8分別是圖6B中沿線I-I’以及線II-II’的主動元件的剖面示意圖。圖6A至圖8之實施例與上述圖2A至圖4之實施例相似,因此相同或相似的元件以相同或相似的符號表示,且不再重複說明。6A is a top plan view of a pixel structure in accordance with a second embodiment of the present invention, FIG. 6B is an enlarged schematic view of a region R of FIG. 6A, and FIGS. 7 and 8 are lines I-I' and lines along FIG. 6B, respectively. A schematic cross-sectional view of the active element of II-II'. The embodiments of Figures 6A through 8 are similar to the above-described embodiments of Figures 2A through 4, and therefore the same or similar elements are designated by the same or similar symbols and the description is not repeated.

請同時參照圖6A至圖8,圖6A至圖8之實施例與上述圖2A至圖4之實施例的不同之處在於間隙物140’的第三邊緣140c’與第四邊緣140d’同時位於通道層CH外。更詳細來說,在畫素結構100’中,間隙物140’完全地覆蓋通道層CH,且第三邊緣140c’與第四邊緣140d’不與通道層CH重疊。Referring to FIG. 6A to FIG. 8 simultaneously, the embodiment of FIGS. 6A to 8 is different from the embodiment of FIG. 2A to FIG. 4 in that the third edge 140c' of the spacer 140' is located at the same time as the fourth edge 140d'. Outside the channel layer CH. In more detail, in the pixel structure 100', the spacer 140' completely covers the channel layer CH, and the third edge 140c' and the fourth edge 140d' do not overlap with the channel layer CH.

值得一提的是,在本實施例中,當間隙物140’與主動元件T之間具有對位誤差(例如間隙物140’上移、下移或旋轉)時,則間隙物140’與主動元件T之第一區域110(亦即,主動元件T的高度最高的區域)的重疊面積實質上可以維持固定值,其中所述重疊面積與第一區域110的面積相同。亦即,間隙物140’被主動元件T之第一區域110所壓縮的面積實質上可以維持固定值,其中所述間隙物140’被主動元件T之第一區域110所壓縮的面積也就是上述的重疊面積。也就是說,本發明具有最佳化的間隙物140’的設計,以使畫素結構100’的間隙物140與主動元件T的高度最高的區域(亦即,第一區域110)之間的重疊面積不會隨間隙物140的偏移而改變,進而可使間隙物140的結構穩定且顯示面板50的 不同區域具有均勻的耐壓程度。It is worth mentioning that, in this embodiment, when there is a registration error between the spacer 140' and the active device T (for example, the spacer 140' moves up, down, or rotates), the spacer 140' and the active The overlapping area of the first region 110 of the component T (i.e., the region of the highest height of the active component T) may substantially maintain a fixed value, wherein the overlapping area is the same as the area of the first region 110. That is, the area of the spacer 140' compressed by the first region 110 of the active device T can be substantially maintained at a fixed value, wherein the area of the spacer 140' compressed by the first region 110 of the active device T is also The overlapping area. That is, the present invention has an optimized spacer 140' design such that the spacer 140 of the pixel structure 100' is between the region of the highest height of the active device T (i.e., the first region 110). The overlap area does not change with the offset of the spacer 140, so that the structure of the spacer 140 can be stabilized and the display panel 50 Different areas have a uniform pressure resistance.

綜上所述,在本發明的畫素結構中,間隙物至少覆蓋主動元件之第一區域(亦即,主動元件的高度最高的區域),且間隙物的第一邊緣與第二邊緣位於第一區域外。因此,當間隙物與主動元件之間具有對位誤差時,則間隙物所受到的壓縮力實質上為固定值。也就是說,本發明具有最佳化的間隙物的設計,以使畫素結構的間隙物與主動元件的高度最高的區域之間的重疊面積不會隨間隙物的偏移而改變,進而可使間隙物的結構穩定且顯示面板的不同區域具有均勻的耐壓程度。In summary, in the pixel structure of the present invention, the spacer covers at least the first region of the active device (ie, the region with the highest height of the active component), and the first edge and the second edge of the spacer are located at the Outside the area. Therefore, when there is a registration error between the spacer and the active element, the compressive force received by the spacer is substantially a fixed value. That is, the present invention has an optimized spacer design such that the area of overlap between the spacer of the pixel structure and the region of the highest height of the active element does not change with the offset of the spacer, and thus The structure of the spacer is stabilized and different regions of the display panel have a uniform withstand voltage.

雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and any one of ordinary skill in the art can make some changes and refinements without departing from the spirit and scope of the present invention. The scope of the invention is defined by the scope of the appended claims.

110‧‧‧第一區域110‧‧‧First area

120‧‧‧第二區域120‧‧‧Second area

130‧‧‧第三區域130‧‧‧ Third Area

140‧‧‧間隙物140‧‧‧Interval

140a‧‧‧第一邊緣140a‧‧‧ first edge

140b‧‧‧第二邊緣140b‧‧‧ second edge

140c‧‧‧第三邊緣140c‧‧‧ third edge

140d‧‧‧第四邊緣140d‧‧‧ fourth edge

CH‧‧‧通道層CH‧‧‧ channel layer

D‧‧‧汲極D‧‧‧汲

d1、d2、d3、d4‧‧‧最短距離D1, d2, d3, d4‧‧‧ shortest distance

G‧‧‧閘極G‧‧‧ gate

R‧‧‧區域R‧‧‧ area

S‧‧‧源極S‧‧‧ source

T‧‧‧主動元件T‧‧‧ active components

I-I’、II-II’‧‧‧線I-I’, II-II’‧‧‧ line

Claims (14)

一種畫素結構,包括:一資料線以及一掃描線;一主動元件,與該資料線以及該掃描線電性連接,且該主動元件包括一閘極、一通道層、一源極以及一汲極,其中該閘極、該通道層以及該源極或該汲極在垂直投影方向上的重疊部分為一第一區域,一畫素電極,與該汲極電性連接;以及一間隙物,對應該主動元件設置,其中該間隙物覆蓋該主動元件之該第一區域,該間隙物具有相對設置的一第一邊緣與一第二邊緣,該第一邊緣與該第二邊緣位於該第一區域外,其中該間隙物具有相對設置的一第三邊緣與一第四邊緣,且該第三邊緣與該第四邊緣位於該第一區域外。 A pixel structure includes: a data line and a scan line; an active component electrically connected to the data line and the scan line, and the active component includes a gate, a channel layer, a source, and a drain a pole, wherein the gate, the channel layer, and the overlapping portion of the source or the drain in the vertical projection direction is a first region, a pixel electrode electrically connected to the gate; and a spacer, Corresponding to the active component arrangement, wherein the spacer covers the first region of the active component, the spacer has a first edge and a second edge disposed opposite to each other, the first edge and the second edge are located at the first Outside the region, the spacer has a third edge and a fourth edge disposed opposite to each other, and the third edge and the fourth edge are located outside the first region. 如申請專利範圍第1項所述的畫素結構,其中該閘極以及該源極及該汲極在垂直投影方向上的重疊部分為一第二區域,該間隙物之該第二邊緣與該汲極重疊且不與該第二區域重疊。 The pixel structure of claim 1, wherein the gate and the overlapping portion of the source and the drain in the vertical projection direction are a second region, the second edge of the spacer and the The bungee overlaps and does not overlap with the second region. 如申請專利範圍第1項所述的畫素結構,其中該閘極以及該通道層在垂直投影方向上的重疊部分為一第三區域,且該第三邊緣與該第四邊緣位於該第三區域中。 The pixel structure of claim 1, wherein the gate and the overlapping portion of the channel layer in the vertical projection direction are a third region, and the third edge and the fourth edge are located at the third region. In the area. 如申請專利範圍第3項所述的畫素結構,其中該間隙物部分地覆蓋該通道層,且該第三邊緣與該第四邊緣與該通道層重疊。 The pixel structure of claim 3, wherein the spacer partially covers the channel layer, and the third edge and the fourth edge overlap the channel layer. 如申請專利範圍第1項所述的畫素結構,其中該第三邊緣 與該第四邊緣同時位於該通道層外。 The pixel structure as described in claim 1, wherein the third edge Simultaneously with the fourth edge is located outside the channel layer. 如申請專利範圍第5項所述的畫素結構,其中該間隙物完全地覆蓋該通道層,且該第三邊緣與該第四邊緣不與該通道層重疊。 The pixel structure of claim 5, wherein the spacer completely covers the channel layer, and the third edge and the fourth edge do not overlap the channel layer. 如申請專利範圍第1項所述的畫素結構,其中該間隙物之該第一邊緣以及該第二邊緣與該主動元件之該第二區域之間的最短距離分別為1μm以上。 The pixel structure of claim 1, wherein the first edge of the spacer and the shortest distance between the second edge and the second region of the active device are respectively 1 μm or more. 如申請專利範圍第1項所述的畫素結構,其中該間隙物之該第三邊緣以及該第四邊緣與該主動元件之該第一區域之間的最短距離分別為1μm以上。 The pixel structure of claim 1, wherein the third edge of the spacer and the shortest distance between the fourth edge and the first region of the active device are each 1 μm or more. 如申請專利範圍第1項所述的畫素結構,其中該間隙物與該通道層的形狀各自為矩形、正方形、梯形、多邊形或不規則形。 The pixel structure of claim 1, wherein the spacer and the channel layer are each rectangular, square, trapezoidal, polygonal or irregular. 如申請專利範圍第1項所述的畫素結構,其中該間隙物包括至少一長邊,且該間隙物之該長邊與該通道層的一長邊彼此正交。 The pixel structure of claim 1, wherein the spacer comprises at least one long side, and the long side of the spacer and one long side of the channel layer are orthogonal to each other. 如申請專利範圍第10項所述的畫素結構,其中該間隙物具有兩長邊,且所述兩長邊實質上彼此平行。 The pixel structure of claim 10, wherein the spacer has two long sides, and the two long sides are substantially parallel to each other. 如申請專利範圍第11項所述的畫素結構,其中該間隙物為一矩形間隙物,且該通道層為一矩形通道層。 The pixel structure of claim 11, wherein the spacer is a rectangular spacer, and the channel layer is a rectangular channel layer. 如申請專利範圍第1項所述的畫素結構,其中該間隙物包括至少一長邊,該至少一長邊沿著該掃描線之延伸方向延伸。 The pixel structure of claim 1, wherein the spacer comprises at least one long side, the at least one long side extending along a direction in which the scan line extends. 如申請專利範圍第1項所述的畫素結構,其中該第一邊 緣和該第二邊緣與該資料線實質上朝同一方向延伸。The pixel structure as described in claim 1, wherein the first side The edge and the second edge extend substantially in the same direction as the data line.
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