TWI513051B - Led wafer and manufacturing method thereof - Google Patents

Description

Light-emitting diode wafer and manufacturing method thereof

The present disclosure relates to a light emitting diode wafer and a method of fabricating the same.

Over the years, LED components have been used for low power consumption, low heat generation, long operating life, impact resistance, small size, fast response, no mercury, and good optical properties such as stable wavelengths. Application of household appliances, instrument indicators, and optoelectronic products. With the advancement of optoelectronic technology, LED components have made great progress in improving luminous efficiency, service life and brightness, and will become the mainstream of future light-emitting components in the near future. However, the fabrication of light-emitting diode chips is performed by an epitaxial process, and the process is quite complicated. Therefore, the light-emitting diode chips fabricated on the same wafer cannot exhibit uniform photoelectric characteristics, such as brightness, wavelength, or color temperature. Both may vary. Therefore, after the completion of the epitaxial wafer, the manufacturer of the LED chip will distinguish the LEDs of different optical specifications, which is commonly known as the range of specifications (Bin).

In general, in order to be able to be applied to, for example, a backlight module of a display and to obtain a uniform color patch distribution, it is necessary to limit the chromaticity specifications of each of the light-emitting diode wafers to a narrow range, so that each light-emitting second can be determined. The color specifications of the polar body wafer are kept within a certain range. Although many coatings using wafer-level phosphor materials have been used to produce white light, the range of color or brightness specifications for each light-emitting diode chip cannot be precisely controlled.

According to an embodiment of the present disclosure, a method of fabricating a light emitting diode includes providing a plurality of light emitting diode chips on a substrate; obtaining a light emitting characteristic of each of the light emitting diode chips; and forming an optical converting portion Corresponding to each of the light emitting diode chips, each of the light emitting diode chips reaches a target light emitting characteristic range via a corresponding light emitted by the corresponding optical converting portion.

According to an embodiment of the present disclosure, a light emitting diode wafer includes a substrate; a plurality of light emitting diode wafers are disposed on the substrate, each of the light emitting diode chips has a light emitting characteristic; and a plurality of optical conversions Each of the optical conversion portions is correspondingly disposed on each of the light emitting diode wafers according to a plurality of conversion parameters corresponding to the light emitting characteristics, such that each of the light emitting diode wafers passes through each of the corresponding opticals A light emitted by the conversion portion reaches a range of target illumination characteristics.

According to the relationship between the conversion parameter and the illuminating characteristic, the optical conversion portion corresponding to each of the LED chips can be properly matched with the illuminating diode wafer, and thus, although disposed on a single substrate The light emitting diode chip has different light emitting characteristics. For example, the color temperature distribution of the light emitting diode chips is wide, and the color temperature distribution of the light emitting diode chips can be concentrated by the optical converting portions having different conversion parameters. To obtain a white light emitting diode wafer with high chroma coordinate concentration.

The above description of the disclosure and the following embodiments are intended to illustrate and explain the spirit and principles of the disclosure, and to provide further explanation of the scope of the disclosure.

10a, 10b, 10c, 10e, 10f, 10g, 10h‧‧‧Light Emitter Wafer

101,102,103,104,105,106‧‧‧Packed LEDs

107,108,109,110‧‧‧Packed LEDs

11a, 11b‧‧‧ solder joints

20‧‧‧Substrate

30a, 30b, 30c, 30e‧‧‧ Optical Conversion Department

32a, 32b, 32c, 32d, 32e, 32f‧‧ ‧ retaining wall

34a, 34b, 34c, 34d, 34e, 34f‧‧‧Fluorescent Materials Division

340a, 340b, 340c, 340d‧‧‧ fluorescent materials

340e, 340f, 340g, 340h, 340i‧‧‧ fluorescent materials

35a, 35b, 35c, 35d, 35e, 35f‧ ‧ flattening layer

35g, 35h, 35i, 35j‧‧ ‧ flattening layer

36a, 36b, 36c, 36d, 36e, 36f‧‧‧ grooves

36g, 36h, 36i, 36j‧‧‧ grooves

40a, 40b‧‧‧Protection Department

50a, 50b‧‧‧ cutting line

1 is a schematic flow chart of a method of manufacturing a light-emitting diode according to the present disclosure.

2 is a partial structural view of a first embodiment of a light emitting diode wafer according to the present disclosure.

FIG. 3A is a partial structural diagram of a second embodiment of a light emitting diode wafer according to the present disclosure.

3B is a partial structural diagram of a third embodiment of a light emitting diode wafer according to the present disclosure.

4A is a partial structural view of a fourth embodiment of a light-emitting diode wafer according to the present disclosure.

FIG. 4B is a partial structural diagram of a fifth embodiment of a light emitting diode wafer according to the present disclosure.

Figure 5 is a partial structural view of a sixth embodiment of a light-emitting diode wafer according to the present disclosure.

Figure 6 is a partial structural view of a seventh embodiment of a light-emitting diode wafer according to the present disclosure.

The detailed features and advantages of the present disclosure are described in detail in the following detailed description of the embodiments of the present disclosure, which are The objects and advantages associated with the present disclosure can be readily understood by those skilled in the art. The following examples are intended to further illustrate the present disclosure, but are not intended to limit the scope of the disclosure.

Please also refer to "Figure 1" and "Figure 2", "Figure 1" is based on A schematic flow chart of a method for manufacturing a light-emitting diode according to the present disclosure. FIG. 2 is a schematic structural view of a first embodiment of a light-emitting diode wafer according to the present disclosure.

First, the manufacturing method of the light emitting diode includes: S500: providing a plurality of light emitting diode wafers 10a, 10b on the substrate 20; S510: obtaining light emitting characteristics of each of the light emitting diode wafers 10a, 10b; and S520: forming An optical conversion portion 30a, 30b corresponds to each of the light-emitting diode wafers 10a, 10b such that each of the light-emitting diode wafers 10a, 10b reaches a target via a light emitted from the corresponding optical conversion portions 30a, 30b. The range of luminescence properties.

The step of obtaining the illuminating characteristics of the S510 may include: S512: electrically connecting the plurality of illuminating diode chips 10a, 10b to the substrate 20; S514: driving the plurality of illuminating diode chips 10a, 10b; and S516: measuring each A light-emitting diode wafer 10a, 10b obtains light-emitting characteristics.

Before the light-emitting characteristics are obtained in S510 or before the plurality of light-emitting diode wafers 10a, 10b are provided on the substrate 20 in S500, in order to make each of the light-emitting diode wafers 10a, 10b disposed on the substrate 20 have relatively close light-emitting characteristics, It is conceivable to screen all of the light-emitting diode wafers 10a, 10b before arranging the light-emitting diode wafers 10a, 10b on the substrate 20. The screening conditions are such that the light-emitting characteristics are close, such as but not limited to Luminous intensity, dominant wavelength, peak wavelength, and the like. The luminescent property here refers to the characteristics of the light emitted by the light-emitting diode wafers 10a, 10b itself (the wafer itself).

Thereafter, the S500 provides a plurality of LED chips 10a, 10b, etc., which are disposed on the substrate 20 in a one-dimensional array, a two-dimensional array, a matrix form, a concentric circular shape, a radial circular shape, a swirling form, or the like. On the substrate 20. The substrate 20 may also be referred to as a package substrate or Board (submount).

The electrical connection of the S512 is determined by the type of the light-emitting diode chips 10a, 10b. The light-emitting diode chips 10a, 10b of the "second drawing" are taken as an example, and the light-emitting diode chips 10a, 10b are covered. A flip-chip light-emitting diode wafer is used. Therefore, the electrical connection method is electrically connected to the substrate 20 by means of gold balls or eutectic solder joints 11a, 11b after flip chip bonding, but it is not To this end, if the LEDs 10a, 10b are not flip-chip diodes, the LEDs 10a, 10b can be electrically connected to the substrate 20 by wire bonding or semiconductor wire bonding. (not shown).

When the plurality of light-emitting diode wafers 10a, 10b are driven in S514, the light-emitting diode wafers 10a, 10b may be driven by a constant current method or in any manner, in order to enable the light-emitting diode wafers on the same substrate 20. 10a, 10b are measured under the same driving conditions. It is recommended to use a consistent driving method, for example, using the same current value or the same modulation method.

S516 measures each of the light-emitting diode wafers 10a, 10b to obtain light-emitting characteristics, which may be, but are not limited to, light-emitting intensity, dominant wavelength, peak wavelength, or a combination thereof. The "combination" of the above-mentioned various characteristics (in this example, three) may be a combination of the two, or a combination of the three, and the "combination" described below also has the same meaning. In this example, the "combination" is, for example but not limited to, measuring the luminous intensity and dominant wavelength, measuring the dominant wavelength and peak wavelength, measuring the luminous intensity and peak wavelength, or measuring the luminous intensity, the dominant wavelength and the peak wavelength. .

Next, the step S520 forming the optical conversion portions 30a, 30b corresponding to each of the LED substrates 10a, 10b may include: S522: converting the lookup table according to the illumination characteristics and characteristics to obtain a plurality of conversions a parameter; S524: forming at least one receiving body for each of the LED chips 10a, 10b according to a plurality of conversion parameters, the receiving body having at least one groove, and the groove is disposed corresponding to each of the LED chips 10a, 10b And S526: arranging at least one phosphor material portion 34a, 34b in the groove to form the optical conversion portions 30a, 30b.

The characteristic conversion lookup table in S522 has a correspondence relationship between the light emission characteristics and the conversion parameters, wherein the conversion parameters may also be referred to as a coating parameter or a conversion portion parameter, and the conversion parameters may be, but are not limited to, the fluorescence in the optical conversion portions 30a, 30b. The concentration of the materials (fluorescent powder) 340a, 340b, the volume of the conversion portion, the material of the phosphor powder, the number of layers of the phosphor powder, or a combination thereof. How to make the feature conversion lookup table and the meaning of the conversion parameters, detailed later.

After the search via S522, a plurality of conversion parameters corresponding to each of the light-emitting diode wafers 10a, 10b are obtained, which are corresponding to the light-emitting diode wafers 10a, 10b in a one-to-one manner.

Next, S524 is based on the conversion parameters to form at least one receiving body, and the receiving body may have at least one groove. The receiving body can be, for example, a retaining wall structure, and the at least one receiving body and the at least one phosphor material portion 34a, 34b can form the optical conversion portions 30a, 30b. Additionally, the retaining wall structure can include retaining walls 32a, 32b. In the embodiment of FIG. 2, the retaining walls 32a, 32b are disposed on the substrate 20 and individually surround each of the LED wafers 10a, 10b, but are not limited thereto. In other embodiments, As shown in FIG. 3A, FIG. 3A is a partial structural view of a second embodiment of a light-emitting diode wafer according to the present disclosure. The optical conversion portion 30c may include a plurality of retaining walls 32c, 32d and a plurality of fluorescent material portions 34c, 34d, and the retaining walls 32c, 32d are disposed on the light emitting diode chip Above 10c (protection portions 40a, 40b are not drawn in "Fig. 3A"). The shape of the cross-sectional area of the retaining walls 32a, 32b, 32c, and 32d (i.e., the shape viewed from above the "second drawing") may be, but not limited to, a square, a rectangle, a circle, an arbitrary shape, or a mating light-emitting diode wafer 10a. 10b, 10c The shape of the top contour.

Next, S526 is provided with at least one phosphor material portion 34a, 34b, 34c, 34d in the recess to form the optical conversion portions 30a, 30b, 30c. The phosphor material portions 34a, 34b, 34c, 34d have a plurality of phosphor materials 340a, 340b, 340c, 340d, which can be illuminated by the LED wafers 10a, 10b, 10c. The emitted light is excited to generate another wavelength. For example, when the light emitted by the LED wafers 10a, 10b, 10c is blue light, the fluorescent materials 340a, 340b, 340c, 340d may be excited by blue light. The yellow fluorescent powder, therefore, the yellow light emitted by the yellow fluorescent powder is mixed with the blue light to form white light, so that the encapsulated light emitting diodes 101, 102, 103, 104 can emit white light as a whole. The phosphor material portions 34c, 34d of the "Fig. 3A" embodiment have a plurality of phosphor materials 340c, 340d, and the phosphor materials 340c, 340d may contain the same or different phosphor powders to be excited to generate phases. Light of different wavelengths.

The phosphor material 340a, 340b, 340c, 340d can be a thermally curable phosphor material or a liquid phosphor material. The selection of this fluorescent material, considering the environment of the overall light-emitting diode, can be considered to use a high boiling point solvent with a boiling point higher than 100 degrees Celsius. The liquid fluorescent material may be, but not limited to, a cyclic molecule non-conjugated solvent, a cyclic molecule conjugated solvent, or a cyclic molecule fully conjugated solvent (cyclic molecule). All-conjugated solvent). The thermally cured fluorescent material may be, but not limited to, a silicone mixed with a fluorescent powder or an epoxy mixed with a fluorescent powder. The manufacturing method of the fluorescent material portions 34a, 34b, 34c, and 34d will be described in detail later.

Further, the number of the fluorescent material portions 34c, 34d in the above "A-3A" is For example, the number of the fluorescent material portions 34c, 34d may be four, as shown in "Fig. 3B". 3B is a partial structural view of a third embodiment of a light-emitting diode wafer according to the present disclosure. In this embodiment, a plurality of retaining walls 32c, 32d and a plurality of phosphor portions 34c, 34d are provided. For related configurations and operational characteristics, reference may be made to a single light-emitting diode wafer having high chroma coordinate concentration as described in the second embodiment. In addition, the substrate 20 used for the light-emitting diode wafers of "3A" and "3B" may be, for example, the same substrate 20, but is not limited thereto. In other words, a single luminescent diode wafer can have a high chromaticity coordinate concentration by the design of different numbers of phosphor material portions 34c, 34d.

The conversion parameter of the embodiment of "Fig. 2" is exemplified by the volume of the conversion portion, wherein each of the conversion portion volumes includes a groove volume, which is the internal accommodation space of the aforementioned retaining walls 32a, 32b (or The accommodating area) has a groove depth (i.e., a depth at which the retaining walls 32a, 32b accommodate the space) and a groove sectional area (i.e., an area in which the retaining walls 32a, 32b accommodate the space on the horizontal surface). Moreover, in some embodiments, each of the conversion volume may also include a plurality of groove volumes, which may be in an adjacent configuration or an overlapping configuration. Each groove volume can contain the same or different phosphor powder.

Further, in the embodiment of the "second drawing", the volume of the optical conversion portions 30a, 30b is the volume of the groove minus the volume occupied by the corresponding light-emitting diode wafers 10a, 10b, and it can be said that The volume of the optical conversion portions 30a, 30b is equal to the volume of the corresponding phosphor material portions 34a, 34b (i.e., the grooves correspond to the volume of the optical conversion portions 30a, 30b in a one-to-one manner). In the embodiment of FIG. 3A, the optical conversion portion 30c includes a plurality of grooves (ie, accommodation spaces in the respective retaining walls), and each of the grooves is provided with a fluorescent material portion 34c, 34d (ie, The groove corresponds to the volume of the optical conversion portion 30c in a one-to-one manner, and the volume of the optical conversion portion 30c is equal to the plurality of corresponding fluorescent material portions 34c, The sum of the volume of 34d.

Therefore, if the phosphor powder concentrations in the phosphor material portions 34a, 34b, 34c, 34d are the same and the phosphor powder types are the same, the groove depth and the groove cross-sectional area (i.e., different phosphor material portions 34a, 34b, The 34c, 34d volume is suitably configured according to the light-emitting characteristics of the LED wafers 10a, 10b, 10c, so that the overall light-emitting spectrum of the LED wafers 10a, 10b, 10c having different light-emitting characteristics after packaging is obtained. Or color temperature concentration, such as but not limited to falling within four Mac Adam Ellipse. In addition, as described above, the conversion parameter may be a phosphor powder concentration or a phosphor powder material, and the phosphor powder concentration or the phosphor powder material is designed to appropriately correspond to the light-emitting characteristics of the LED chips 10a, 10b, and 10c. A white light emitting diode wafer with high chromaticity coordinates concentration can be obtained. The high chroma coordinate concentration is used to indicate that at least one target illumination characteristic range is included. In other embodiments, the high chroma coordinate concentration may also have two or more target illumination characteristic ranges. That is, the white light emitting diode wafer may have a plurality of target light emitting characteristic ranges at the same time, and the target light emitting characteristic ranges may be different from each other, but not limited thereto, to achieve high chroma coordinate concentration.

For the number of the phosphor layers described above, please refer to FIG. 4A, which is a partial structural diagram of a fourth embodiment of a white light emitting diode wafer according to the present disclosure. It can be seen that the light-emitting diode wafer 10e is provided with two layers of retaining walls 32e, 32f. The retaining walls 32e, 32f are provided with fluorescent material portions 34e, 34f, and the fluorescent materials 340e, 340f may be the same or phase. In this embodiment, the number of layers of the phosphor powder is two layers, but not limited thereto, and the number of layers of the phosphor powder may be three, four or more layers, and visible light-emitting characteristics. And chromaticity coordinates depend on the needs. In addition, in the embodiment, when the multi-layer structure is adopted, the spectral wavelength of the phosphor powder emission may gradually change from the substrate 20 to the light-emitting diode 10e to a shorter wavelength, for example, but not Limited to red, orange Color, yellow, and green, in this way, the phenomenon that the light excited by the phosphor powder is absorbed by each other can be reduced.

Further, for example, the height of the two-layer retaining walls 32e, 32f of the aforementioned "Ath 4A" can be adjusted as shown in "FIG. 4B". FIG. 4B is a partial structural view of the fifth embodiment of the light-emitting diode wafer according to the present disclosure. In this embodiment, the height of the two-layer retaining wall 32e, 32f is smaller than that of the fourth embodiment. The height of the walls 32e, 32f, but its associated configuration and operational characteristics, can be referred to as described in the fourth embodiment, and a single light-emitting diode wafer having a high degree of chromaticity coordinate concentration can also be obtained. Further, the substrate 20 used in the light-emitting diode wafers of the "4A" and "4B" drawings may be, for example, the same substrate 20, but is not limited thereto. In other words, the single-emitting diode wafer can have a high degree of chromaticity coordinate concentration by the design of the different heights of the retaining walls 32e, 32f (i.e., the different depths of the formed grooves).

The aforementioned phosphor powder doping concentration (fluorescent powder concentration) percentage may be, but not limited to, 10% by weight to 80% by weight. The groove depth may be, but not limited to, 5 μm (micrometers) to 1000 μm.

It can be seen from the foregoing embodiments that the receiving body formed by S524 can be, for example, a retaining wall structure. The retaining walls 32a, 32b, 32c, 32d, 32e, 32f may be each retaining wall 32a in the "second drawing", 32b surrounding a corresponding one of the light emitting diode chips 10a, 10b, and each retaining wall 32a 32b has a receiving area; in "3A" and "3B", each of the retaining walls 32c, 32d is disposed on a corresponding one of the light emitting diode chips 10c, and each of the retaining walls 32c, 32d has a housing The retaining walls 32c, 32d on the same LED array 10c are adjacently arranged; in "4A" and "4B", at least two retaining walls 32e, 32f are vertically stacked. It is disposed on a corresponding one of the LED chips 10e, and each of the retaining walls 32e, 32f has the receiving area, and the vertically stacked axial direction refers to a bottom-up direction on the drawing, that is, the substrate 20 The normal direction. Retaining wall 32a, The material of 32b, 32c, 32d, 32e, and 32f may be a transparent material or a material that allows only light emitted from the LED chips 10a, 10b, 10c, and 10e and light emitted from the fluorescent material to pass therethrough.

The method of forming the retaining walls 32a, 32b, 32c, 32d, 32e, 32f may be, but not limited to, directly placing the tubular retaining wall on the corresponding LED wafers 10a, 10b, 10c, 10e, or in the light emitting diode A planarization layer is formed on the wafers 10a, 10b, 10c, 10e by a semiconductor process, and then etched, machined or laser processed to form the barrier walls 32a, 32b, 32c, 32d, 32e, 32f (or etched correspondingly) Groove).

Further, the above-mentioned method of forming a planarization layer by a semiconductor process and etching a corresponding groove can be referred to as shown in FIG. FIG. 5 is a partial structural view of a sixth embodiment of a white light emitting diode wafer according to the present disclosure. First, a planarization layer 35a, 35b, 35c, 35d, 35e, 35f is formed on the substrate 20 and the LED substrate by a semiconductor process on the substrate 20 carrying the LED chips 10f, 10g. 10f, above 10g. Then, dry etching or wet etching of the semiconductor process is performed to form corresponding recesses 36a, 36b, 36c, 36d, 36e, 36f. Next, phosphor materials 340g, 340h are applied over the grooves 36a, 36b, 36c, 36d, 36e, 36f and the planarization layers 35a, 35b, 35c, 35d, 35e, 35f. Finally, the phosphor material 340g, 340h on the planarization layers 35a, 35b, 35c, 35d, 35e, 35f is removed by polishing in a semiconductor process, leaving only the grooves 36a, 36b Fluorescent material 340g, 340h in , 36c, 36d, 36e, 36f. In this way, a light-emitting diode wafer with high chroma coordinate concentration can also be obtained. Among them, the corresponding grooves 36a, 36b, 36c, 36d, 36e, 36f can appropriately adjust the depth of the grooves 36a, 36b, 36c, 36d, 36e, 36f as needed. In this embodiment, the depth of the grooves 36a, 36b, 36c can be, for example, greater than the depth of the grooves 36d, 36e, 36f, and can also achieve a single luminescent diode wafer with high chromaticity coordinate concentration. In other words, it can be concave by different depths. The design of the grooves 36a, 36b, 36c, 36d, 36e, 36f, in turn, enables a single luminescent diode wafer to have high chromaticity coordinate concentration.

In addition, the number of the grooves 36a, 36b, 36c, 36d, 36e, 36f of the above "fifth figure" is exemplified by three, but not limited thereto, the grooves 36a, 36b, 36c, 36d, 36e The number of 36f may be, for example, four. In other embodiments, the number of grooves 36a, 36b, 36c, 36d, 36e, 36f may be, for example, one or more. FIG. 6 is a partial schematic structural view of a seventh embodiment of a light-emitting diode wafer according to the present disclosure. In this embodiment, the planarization layers 35a, 35b, 35c, 35g, 35h, 35i, 35j, and the light-emitting layer are illuminated. Related configurations and operational characteristics of the diodes 10f, 10h, the recesses 36a, 36b, 36c, 36g, 36h, 36i, 36j, and the fluorescent materials 340g, 340i can be referred to as described in the sixth embodiment, and can also be obtained. A single light-emitting diode wafer with high chroma coordinate concentration. In other words, the design of a different number of grooves 36a, 36b, 36c, 36g, 36h, 36i, 36j, such that a single light-emitting diode wafer has a high degree of chromaticity coordinate concentration.

In addition, before the arranging the phosphor material portion in the accommodating region, the accommodating region is subjected to hydrophilic surface treatment or hydrophobic surface treatment according to the conversion parameter. The hydrophilic or hydrophobic surface treatment may be hydrophilic or hydrophobic depending on the coating volume and the hydrophilicity and hydrophobicity of the coated fluorescent materials 340a, 340b, 340c, 340d, 340e, 340f, 340g, 340h, 340i. Surface treatment, the purpose is to fill the luminescent material 340a, 340b, 340c, 340d, 340e, 340f, 340g, 340h, 340i in the receiving area or groove in the retaining wall 32a, 32b, 32c, 32d, 32e, 32f 36a, 36b, 36c, 36d, 36e, 36f, 36g, 36h, 36i, 36j, forming phosphor portions 34a, 34b, 34c, 34d, 34e, 34f or forming grooves 36a, 36b, 36c, 36d, 36e, 36f, 36g, 36h, 36i, 36j are matched with fluorescent materials 340g, 340h, 340i (ie, the fluorescent material part). The method of arranging the fluorescent material portion in the receiving area may be to spin coating the fluorescent materials 340a, 340b, 340c, 340d, 340e, 340f, 340g, 340h, 340i (spin) Coating, slit coating, screen printing, or immersion method applied to the retaining walls 32a, 32b, 32c, 32d, 32e, 32f or grooves 36a, 36b, 36c , 36d, 36e, 36f, 36g, 36h, 36i, 36j. Then, the excess fluorescent materials 340a, 340b, 340c, 340d, 340e, 340f, 340g, 340h, 340i can be removed by grinding to form the fluorescent material portions 34a, 34b, 34c, 34d, 34e, 34f or The grooves 36a, 36b, 36c, 36d, 36e, 36f, 36g, 36h, 36i, 36j are formed with the fluorescent materials 340g, 340h, 340i (i.e., the fluorescent material portion).

After S520 is completed, for example, protection portions 40a, 40b may be formed, which are corresponding to each of the LED wafers 10a, 10b, 10c, 10e, 10f, 10g, 10h, which may be, but not limited to, cladding, Covering and surrounding the LED chips 10a, 10b, 10c, 10e, 10f, 10g, 10h and the like. After the process of forming the protection portions 40a, 40b is completed, each packaged light-emitting diode 101, 102, 103, 104, 105, 106, 107, 108, 109, 110 can be individually cut, and the cutting can be performed by referring to the cutting lines 50a, 50b of "Fig. 2".

Next, regarding the above-described characteristic conversion lookup table, the light-emitting characteristics (light-emitting characteristics of the wafer, hereinafter referred to as wafer characteristics) of the plurality of light-emitting diode wafers 10a, 10b, 10c, 10e, 10f, 10g, and 10h may be first performed. After that, optical conversion portions 30a, 30b, 30c having different conversion parameters are formed on the LED chips 10a, 10b, 10c, 10e, 10f, 10g, 10h having similar (close to) wafer characteristics, 30e, by which the chromaticity coordinate position (ie, the post-package characteristic) obtained by the optical conversion sections 30a, 30b, 30c, and 30e having the same wafer characteristics corresponding to different conversion parameters is known (ie, the overall illumination after packaging) After the test of the optical conversion portions 30a, 30b, 30c, 30e of a plurality of different conversion parameters corresponding to a plurality of different wafer characteristics, in the same manner, the luminous intensity of the polar body, the dominant wavelength, or/and the peak wavelength) The foregoing characteristic conversion lookup table can be created. The lookup table can be a wafer characteristic corresponding to different optical conversion portions 30a, 30b, 30c. After 30e, the package characteristics (encapsulation luminescence characteristics) of the different packaged light-emitting diodes 101, 102, 103, 104, 105, 106, 107, 108, 109, 110 are obtained. When the look-up table is used, a target package characteristic can be predetermined, and then, according to each light-emitting diode on the same substrate 20. The illuminating characteristics (wafer characteristics) of the polar body wafers 10a, 10b, 10c, 10e, 10f, 10g, 10h are searched on the lookup table for conversion parameters corresponding to the target package characteristics, such as but not limited to the volume of the converter, by After the volume of the conversion portion, it can be split into a retaining wall 32a, 32b for an embodiment of a light-emitting diode wafer 10a, 10b, or a plurality of retaining walls 32c, 32d, 32e, 32f for a light-emitting diode The embodiment of the body 10c, 10e, or a plurality of recesses 36a, 36b, 36c, 36d, 36e, 36f, 36g, 36h, 36i, 36j for a light emitting diode wafer 10f, 10g, 10h. Then, the formation of the retaining walls 32a, 32b, 32c, 32d, 32e, 32f and the optical conversion portions 30a, 30b, 30c, 30e or the formation of the grooves 36a, 36b, 36c, 36d, 36e, 36f, 36g, 36h, 36i, 36j with fluorescent material 340g, 340h, 340i program. In addition, as for the single-layer retaining walls 32a, 32b, 32c, 32d or the multi-layer retaining walls 32e, 32f, in addition to being obtainable via the look-up table, it can also be set as needed.

The foregoing lookup table may generate a two-dimensional lookup table corresponding to each package characteristic, and the two-dimensional lookup table includes a correspondence table between the wafer characteristics and the package characteristics, and the correspondence table may be searched by a approaching line (relational equation). Find the conversion parameters by interpolation or extrapolation directly after finding two close points, or use a range value corresponding to one conversion parameter in the part of the wafer characteristics.

As described above, the "second diagram" is taken as an example, and the light-emitting diode wafer includes the substrate 20, the plurality of light-emitting diode wafers 10a and 10b, and the plurality of optical conversion portions 30a and 30b. These light-emitting diode wafers 10a, 10b are located on the substrate 20, and each of the light-emitting diode wafers 10a, 10b has a light-emitting characteristic. Each of the optical conversion sections 30a, 30b is responsive to a plurality of conversion parameters corresponding to the luminescence characteristics And correspondingly disposed on each of the LED wafers 10a, 10b such that each of the LED wafers 10a, 10b reaches a target illumination characteristic via a corresponding light emitted by each of the optical conversion portions 30a, 30b. range.

Each of the optical conversion portions 30a, 30b includes at least one receiving body and at least one fluorescent material portion 34a, 34b. The receiving body has at least one groove (ie, a space surrounded by the retaining walls 32a, 32b), and the groove is The corresponding fluorescent material portions 34a, 34b are accommodated, and the volume of the fluorescent material portions 34a, 34b conforms to the corresponding conversion parameters. For example, the volume of the conversion material is 34. The overall illuminating characteristics of the plurality of illuminating diode chips 10a, 10b after encapsulation may fall within a relatively close area (ie, the overall illuminating characteristics are relatively close at the position of the chromaticity coordinates), such as but not limited to four mics. Adam inside the ellipse.

Therefore, at least two of the conversion portion volumes corresponding to the light-emitting diode wafers 10a, 10b on the same wafer (substrate 20) are substantially different, and the different conversion portion volumes are adapted to each of the illuminations. The adjustment of the luminescent characteristics of the diode wafers 10a, 10b is different.

In addition, the aforementioned doping concentration (fluorescent powder concentration) can also be used as a conversion parameter in the look-up table, that is, the concentration of the fluorescent material of the LED chips 10a, 10b on the same wafer can be It has a relationship with the luminescent properties.

The volume of the optical conversion portions 30a, 30b, 30c, and 30e is the same as that of the housings having the retaining walls 32a, 32b, 32c, 32d, 32e, and 32f. However, the optical conversion portion 30a is not limited thereto. The volume of 30b, 30c, 30e may be less than or equal to the housing having the retaining walls 32a, 32b, 32c, 32d, 32e, 32f.

In summary, the light emitting diode manufacturing method and the light emitting diode crystal of the present disclosure The circle is matched with different optical conversion parts corresponding to the light-emitting characteristics of the light-emitting diode chip, and the package of all the light-emitting diode chips on the same wafer can be completed in a single process, and the packaged light-emitting diode is completed. The individual post-encapsulation luminescence characteristics fall within the four MacAdam ellipses for the purpose of high chromaticity coordinate concentration (the chromaticity coordinate specification range falls precisely within a predetermined interval).

Although the disclosure is disclosed above in the foregoing embodiments, it is not intended to limit the disclosure. All changes and refinements are beyond the scope of this disclosure. Please refer to the attached patent application for the scope of protection defined by this disclosure.

10a, 10b‧‧‧Light Emitter Wafer

101,102‧‧‧Packed LEDs

11a, 11b‧‧‧ solder joints

20‧‧‧Substrate

30a, 30b‧‧‧Optical Conversion Department

32a, 32b‧‧ ‧ retaining wall

34a, 34b‧‧‧Fluorescent Materials Division

340a, 340b‧‧‧ fluorescent materials

40a, 40b‧‧‧Protection Department

50a, 50b‧‧‧ cutting line

Claims (20)

A method for manufacturing a light emitting diode includes: providing a plurality of light emitting diode chips on a substrate; electrically connecting the light emitting diode chips to the substrate; driving the light emitting diode chips; measuring each a light-emitting diode wafer to obtain the light-emitting characteristic; converting the look-up table according to the light-emitting characteristic and a characteristic to obtain a plurality of conversion parameters; forming at least one receiving body for each of the light-emitting diode wafers according to the conversion parameters, The receiving body has at least one groove, and the groove is disposed corresponding to each of the light emitting diode chips; and at least one fluorescent material portion is disposed on the groove to form an optical conversion portion, wherein the optical conversion portion corresponds to Each of the light-emitting diode chips is such that each of the light-emitting diode chips reaches a target light-emitting characteristic range via a corresponding light emitted by the corresponding optical conversion portion. The manufacturing method of the light-emitting diode according to the first aspect of the invention, wherein the receiving body is a retaining wall structure, the retaining wall structure forms the groove, and each of the retaining wall structures surrounds the corresponding light-emitting two Polar body wafer. The manufacturing method of the light-emitting diode according to claim 1, wherein the receiving body is a retaining wall structure, the retaining wall structure forms the groove, and each of the retaining wall structures is disposed corresponding to the Above the light-emitting diode wafer. The method of manufacturing the light-emitting diode according to the first aspect of the invention, wherein the receiving body is a planarization layer, the planarization layer has the groove, and the groove is disposed on the corresponding light-emitting diode chip. Above. The method of manufacturing the light-emitting diode of claim 4, wherein the forming the optical conversion portion comprises: forming the planar layer on the substrate and the light-emitting diode wafers; and converting according to the conversion A parameter is formed on the planar layer of each of the light emitting diode chips. The method for manufacturing a light-emitting diode according to claim 1, wherein the conversion parameters have different grooves corresponding to each of the light-emitting diode chips having different light-emitting characteristics. Volume. The method for manufacturing a light-emitting diode according to claim 1, wherein the groove corresponding to each of the light-emitting diode wafers is disposed adjacently or overlapped at each of the light-emitting diode wafers. The method for manufacturing a light-emitting diode according to the first aspect of the invention, wherein the fluorescent material portion is further disposed on the recessed surface to perform hydrophilic surface treatment or hydrophobicity according to the conversion parameters. Sexual surface treatment. The method for manufacturing a light-emitting diode according to claim 1, wherein each of the conversion parameters is a phosphor concentration, a conversion volume, a phosphor material, a phosphor layer, or Its combination. The method for producing a light-emitting diode according to claim 9, wherein the concentration of the phosphor powder is from 10% by weight to 80% by weight. The method of manufacturing a light-emitting diode according to claim 1, wherein the light-emitting characteristic is a light-emitting intensity, a dominant wavelength, a peak wavelength, a chromaticity coordinate, or a combination thereof. The method for manufacturing a light-emitting diode according to claim 1, wherein the forming method The optical conversion portion further includes forming a protective portion to correspond to the optical conversion portion. A light-emitting diode wafer comprising: a substrate; a plurality of light-emitting diode chips on the substrate, each of the light-emitting diode chips having a light-emitting property; and a plurality of optical conversion portions, each of the optical The conversion unit is correspondingly disposed on each of the light emitting diode chips according to a plurality of conversion parameters corresponding to the light emission characteristics, so that each of the light emitting diode chips is sent via each of the corresponding optical conversion portions. The light reaches a range of target illuminating characteristics, each of the optical converting portions includes: at least one fluorescent material portion; and at least one accommodating body having at least one groove, the groove accommodating the fluorescent material portion. The light-emitting diode wafer of claim 13, wherein the receiving body is a retaining wall structure, the retaining wall structure forming the groove, the retaining wall structure surrounding each of the corresponding light-emitting diodes Set up for the wafer. The light-emitting diode wafer according to claim 13 , wherein the receiving body is a retaining wall structure, the retaining wall structure forms the groove, and the retaining wall structure is disposed on each of the corresponding light-emitting diodes Above the body wafer. The light-emitting diode wafer of claim 13, wherein the receiving body is a planarization layer, the planarization layer is disposed on the substrate and each of the light-emitting diode wafers, and the flat The layer forms the recess over each of the light emitting diode wafers. The light-emitting diode wafer of claim 13, wherein the conversion parameters have different groove volumes corresponding to each of the light-emitting diode chips having different light-emitting characteristics. . The light-emitting diode wafer of claim 13, wherein each of the conversion parameters is a phosphor concentration, a conversion volume, a phosphor material, a phosphor layer, or combination. The illuminating diode wafer according to claim 13, wherein the illuminating characteristic is a luminous intensity, a dominant wavelength, a peak wavelength, a chromaticity coordinate, or a combination thereof. The light-emitting diode wafer of claim 13, wherein the conversion parameters are obtained according to the light-emitting characteristics and a characteristic conversion look-up table.