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TWI504765B - Cu alloy film, and a display device or an electronic device provided therewith - Google Patents

Cu alloy film, and a display device or an electronic device provided therewith Download PDF

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Publication number
TWI504765B
TWI504765B TW101109855A TW101109855A TWI504765B TW I504765 B TWI504765 B TW I504765B TW 101109855 A TW101109855 A TW 101109855A TW 101109855 A TW101109855 A TW 101109855A TW I504765 B TWI504765 B TW I504765B
Authority
TW
Taiwan
Prior art keywords
film
layer
alloy
substrate
alloy film
Prior art date
Application number
TW101109855A
Other languages
English (en)
Chinese (zh)
Other versions
TW201307586A (zh
Inventor
富久勝文
三木綾
後藤裕史
中井淳一
Original Assignee
神戶製鋼所股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 神戶製鋼所股份有限公司 filed Critical 神戶製鋼所股份有限公司
Publication of TW201307586A publication Critical patent/TW201307586A/zh
Application granted granted Critical
Publication of TWI504765B publication Critical patent/TWI504765B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H10P14/40—
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C22C9/05—Alloys based on copper with manganese as the next major constituent
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
    • H10D64/013—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H10P14/412—
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/136295—Materials; Compositions; Manufacture processes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Non-Insulated Conductors (AREA)
TW101109855A 2011-03-31 2012-03-22 Cu alloy film, and a display device or an electronic device provided therewith TWI504765B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011078281A JP2012211378A (ja) 2011-03-31 2011-03-31 Ｃｕ合金膜、及びそれを備えた表示装置または電子装置

Publications (2)

Publication Number Publication Date
TW201307586A TW201307586A (zh) 2013-02-16
TWI504765B true TWI504765B (zh) 2015-10-21

Family

ID=46930608

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101109855A TWI504765B (zh) 2011-03-31 2012-03-22 Cu alloy film, and a display device or an electronic device provided therewith

Country Status (5)

Country Link
JP (1) JP2012211378A (ja)
KR (1) KR20130126996A (ja)
CN (1) CN103460351A (ja)
TW (1) TWI504765B (ja)
WO (1) WO2012132871A1 (ja)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5893797B2 (ja) * 2013-03-07 2016-03-23 Ｊｘ金属株式会社 銅合金スパッタリングターゲット
JP6250614B2 (ja) * 2015-02-19 2017-12-20 株式会社神戸製鋼所 Ｃｕ積層膜、およびＣｕ合金スパッタリングターゲット
CN104962871B (zh) * 2015-05-25 2018-04-27 同济大学 一种高导电性铝合金薄膜及其制备方法
JP2018032601A (ja) * 2016-08-26 2018-03-01 株式会社神戸製鋼所 反射電極およびＡｌ合金スパッタリングターゲット
WO2018134957A1 (ja) * 2017-01-20 2018-07-26 凸版印刷株式会社 表示装置及び表示装置基板
TWI630534B (zh) * 2017-01-23 2018-07-21 日商凸版印刷股份有限公司 Display device and display device substrate
JP2018180297A (ja) * 2017-04-13 2018-11-15 株式会社アルバック ターゲット、配線膜、半導体素子、表示装置
CN110392909A (zh) 2017-04-13 2019-10-29 株式会社爱发科 液晶显示装置、有机el显示装置、半导体元件、布线膜、布线基板、靶材
KR102370249B1 (ko) * 2017-06-05 2022-03-04 도판 인사츠 가부시키가이샤 반도체 장치, 표시 장치 및 스퍼터링 타깃
CN111463168A (zh) * 2019-09-24 2020-07-28 夏泰鑫半导体(青岛)有限公司 金属互连结构及其制备方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201040291A (en) * 2009-01-16 2010-11-16 Kobe Steel Ltd Display device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3997301B2 (ja) * 2003-05-23 2007-10-24 独立行政法人産業技術総合研究所 負性抵抗電界効果素子及びその製造方法
US7507618B2 (en) * 2005-06-27 2009-03-24 3M Innovative Properties Company Method for making electronic devices using metal oxide nanoparticles
JP5489445B2 (ja) * 2007-11-15 2014-05-14 富士フイルム株式会社 薄膜電界効果型トランジスタおよびそれを用いた表示装置
US8558382B2 (en) * 2009-07-27 2013-10-15 Kobe Steel, Ltd. Interconnection structure and display device including interconnection structure

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201040291A (en) * 2009-01-16 2010-11-16 Kobe Steel Ltd Display device

Also Published As

Publication number Publication date
KR20130126996A (ko) 2013-11-21
CN103460351A (zh) 2013-12-18
JP2012211378A (ja) 2012-11-01
TW201307586A (zh) 2013-02-16
WO2012132871A1 (ja) 2012-10-04

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