TWI503920B - Process equipment and o-ring thereof - Google Patents

Description

Semiconductor process equipment and its O-ring

This invention relates to an O-ring, and more particularly to an O-ring for use in a semiconductor process equipment.

Referring to Figures 1a and 1b, there is shown a conventional semiconductor processing apparatus (plasma etching apparatus) 1 for performing a process on a wafer 2. Fig. 1b is an enlarged view of a portion A in Fig. 1a. The semiconductor processing apparatus 1 includes a crystal holder 10, an extended cover member 20, and a cavity 30. The crystal holder 10 is disposed in the cavity 30. The crystal holder 10 includes a crystal holder body 11 , a fluid supply unit 13 , and a carrier member 12 . The carrier member 12 is disposed on the wafer holder body 11 . The wafer 2 is placed on the carrier member 12 . The supply unit 13 is disposed in the base body 11 and provides a fluid 3 to the wafer 2 via the carrier member 12, wherein a groove 14 is formed on one of the crystal seat sides 15 of the crystal holder 10. The junction of the base body 11 and the carrier element 12.

Referring to FIG. 1b, in the prior art, since a small gap (leakage point) exists at the junction of the crystal holder body 11 and the carrier member 12, the fluid 3 leaks through the gap at the groove 14 (in In some cases, the gap (leakage point) will be at the center of the bottom of the groove 14). Referring to Fig. 1c, in order to avoid leakage of the fluid 3, the adhesive 4 is filled into the groove 14 to seal the groove 14. However, referring to Fig. 1d, since the adhesive 4 is lost by etching of the plasma particles, the sealing effect will be lost after long-term use. In addition, since the effective time of the adhesive 4 is uncertain and cannot be periodically replenished or replaced, it affects the overall process yield.

The present invention is a semiconductor process apparatus for solving the problems of the prior art for performing a process on a wafer, including a crystal holder and an O-ring. The crystal holder includes a crystal holder body, a fluid supply unit and a carrier member, the carrier member is disposed on the crystal holder body, the wafer is disposed on the carrier member, and the fluid supply unit is disposed on the crystal holder body And providing a fluid to the wafer, wherein a trench is formed on a side of the crystal holder of the crystal holder at a junction of the crystal holder body and the carrier member. An O-ring is disposed in the groove.

In one embodiment, the semiconductor process apparatus of the present invention further includes an extended cover element that surrounds the load-bearing element and maintains a spacing from the side of the mount.

In one embodiment, the trench has a trench width, and the O-ring has an O-ring width, and the ratio of the O-ring width to the trench width is between 1.00 and 1.20, for example, 1.05 to 1.15. .

In one embodiment, the groove has a groove center diameter, the O-ring has an O-ring center diameter, and a ratio of a center diameter of the O-ring to a center diameter of the groove is between 0.95 and 1.00. For example, 0.97 to 0.99.

In an embodiment, the O-ring has a rectangular cross section.

In another embodiment, the O-ring has a first lead portion and a second lead portion. The first lead portion is formed on one of the first inner edges of the O-ring, and the second lead portion is formed. And a second inner edge of the O-ring. The first guiding portion is located on a top surface of an O-ring, and a ratio of a radial width of the top surface of the O-ring to a radial width of the O-ring is between 0.70 and 0.90, for example, 0.75 to 0.88. The second corner portion is located on a bottom surface of an O-ring, and a ratio of a radial width of the bottom surface of the O-ring to a radial width of the O-ring is between 0.70 and 0.90, for example, 0.75 to 0.88.

In an embodiment, the O-ring is made of rubber, and the material of the carrier element is ceramic.

In one embodiment, the trench has a trench bottom surface and a trench sidewall, wherein the trench bottom surface has a width greater than a radial width of the trench sidewall.

In one embodiment, the fluid enters the groove through the gap between the base body and the carrier member and is sealed by the O-ring.

The invention also relates to an O-ring comprising an O-ring body and a first lead. The O-ring body has a rectangular cross section. The first lead portion is formed on one of the first inner edges of the O-ring body.

With the semiconductor process apparatus (plasma etching apparatus) of the present invention, since the groove is sealed by using an O-ring, fluid leakage can be prevented. In addition, since the quality of the O-ring is relatively uniform, it can be accurately replaced according to the service life. In particular, since the O-ring having a rectangular cross section is employed in the embodiment of the present invention, it is applicable to the case where the width of the bottom surface of the groove is larger than the radial width of the side wall of the groove, thereby providing a good sealing effect.

Further, with the O-ring of another embodiment, since the O-ring has the first corner portion and the second corner portion, it can be smoothly placed into the groove to provide a sealing effect.

In one embodiment, the O-ring has a radial width and a vertical thickness, wherein the ratio of the radial width to the vertical thickness is between 1:0.8 and 1:4.

In another embodiment, the O-ring has an O-ring body and a rib, the O-ring body has an inner side and an outer side, the inner side contacting the bottom of the groove, the outer side and the outer side The rib is formed on the outer side opposite the inner side.

Referring to Figures 2a and 2b, there is shown a semiconductor process apparatus (plasma etching apparatus) 100 of a first embodiment of the present invention for performing a process on a wafer 2. Fig. 2b is an enlarged view of a portion A1 in Fig. 2a. The semiconductor process device 100 includes a crystal holder 10, an extended cover member 20, an O-ring (O-ring body) 110, and a cavity 30. The crystal holder 10 is disposed in the cavity 30. The crystal holder 10 includes a crystal holder body 11 , a fluid supply unit 13 , and a carrier member 12 . The carrier member 12 is disposed on the wafer holder body 11 . The wafer 2 is placed on the carrier member 12 . The supply unit 13 is disposed in the base body 11 and supplies a fluid 3 to the wafer 2 via the carrier member 12. A trench 14 is formed on the side of the crystallizer side of the crystal holder 10 at the junction of the holder body 11 and the carrier member 12. The extended cover member 20 surrounds the carrier member 12 and maintains a spacing G between the wafer holder side 15. An O-ring 110 is disposed in the groove 14.

Referring to FIG. 2c, the trench has a trench width d1, and the O-ring 110 has an O-ring width d2, and the ratio of the O-ring width d2 to the trench width d1 is between 1.00 and 1.20. For example, 1.05 to 1.15. The groove 14 has a groove center diameter Φ ₁ , and the O-ring 110 has an O-ring center diameter Φ ₂ , and the O-ring center diameter Φ _{2 is} greater than the groove center diameter Φ ₁ by 0.95 ～ Between 1.00, for example, 0.97 to 0.99.

In this embodiment, the O-ring 110 has a rectangular cross section and is made of rubber. However, the present invention is not limited thereto, and the shape of the O-ring 110 may be modified correspondingly according to the shape of the groove.

In an embodiment, the material of the carrier element 12 is ceramic. The groove 14 has a bottom surface 141 and a groove 142 groove sidewalls, wherein a bottom surface of the groove 141 is greater than a width W _b W _r radial width of the trench 142 sidewalls. The fluid 3 enters the groove 14 through the gap between the base body 11 and the carrier member 12 and is sealed by the O-ring 110.

With the semiconductor process apparatus (plasma etching apparatus) of the present invention, since the groove is sealed by using an O-ring, fluid leakage can be prevented. In addition, since the quality of the O-ring is relatively uniform, it can be accurately replaced according to the service life. In particular, since the O-ring having a rectangular cross section is employed in the embodiment of the present invention, it is applicable to the case where the width of the bottom surface of the groove is larger than the radial width of the side wall of the groove, thereby providing a good sealing effect.

Fig. 3A shows an O-ring 120 of a second embodiment of the present invention. In the second embodiment of the present invention, the other elements of the semiconductor process apparatus have the same structure as the first embodiment. Referring to FIG. 3, the O-ring 120 has a first lead portion 121 and a second lead portion 122. The first lead portion 121 is formed on one of the first inner edges of the O-ring 120. The second lead portion 122 is formed on a second inner edge of the O-ring 120. The first guiding portion 121 is located on an O-ring top surface 123. The ratio of the radial width W _{ot of} the O-ring top surface 123 to the radial width W _o of the O-ring 120 is between 0.70 and 0.90. , for example, 0.75 to 0.88. The second corner portion 122 is located on an O-ring bottom surface 124. The ratio of the radial width W _{ob of} the O-ring bottom surface 124 to the radial width W _o of the O-ring 120 is between 0.70 and 0.90, for example. 0.75 ~ 0.88.

According to the O-ring of the second embodiment of the present invention, since the O-ring has the first guide portion and the second guide portion, it can be smoothly placed into the groove to provide a sealing effect.

Fig. 3B is a view showing an O-ring 120' of a third embodiment of the present invention. In the third embodiment of the present invention, the other elements of the semiconductor process apparatus are substantially the same as those of the first embodiment. Referring to Fig. 3B, the O-ring 120' has a lead portion 121'. A lead portion 121' is formed at an inner edge of the O-ring 120'. The lead portion 121' is located on the bottom surface 124 of an O-ring, but may also be located on the top surface 123 of the O-ring. O-ring 120' has a radial width W _o and a vertical thickness T _o . In the third embodiment, the ratio of the radial width W _o to the vertical thickness T _o , in combination with the groove size, is between 1:0.8 and 1:4. In particular, the third embodiment is applicable to the case where the ratio of the radial width W _o to the vertical thickness T _o is between 1:2 and 1:4. In this embodiment, only a single lead portion 121' is required, and assembly can be completed smoothly.

3C is a view showing an O-ring 120" according to a fourth embodiment of the present invention. In the fourth embodiment of the present invention, the other components of the semiconductor processing apparatus have substantially the same structure as the first embodiment. Referring to FIG. 3C, an O-ring The 120" has an O-ring body 128 and a rib 125. The O-ring body 128 has an inner side 126 and an outer side 127. The inner side 126 contacts the bottom of the groove, and the outer side 127 and the inner side Opposite the side 126, the rib 125 is formed over the outer side 127. Wherein, the O-ring body 128 has a body radial thickness W _o (the same radial thickness as described above), the rib has a rib radial thickness W _rib , the body radial thickness W _o and the rib radial thickness W The ratio of _rib is between 3:1 and 12:1. In the fourth embodiment of the present invention, by the arrangement of the ribs 125, the radial strength of the O-ring 120" can be strengthened to prevent the O-ring 120" from being deflected in the radial direction. Further, in the present embodiment, by appropriately designing the ratio of the radial thickness W _{o of} the body to the radial thickness W _{rib of the rib} , it is possible to simultaneously provide sufficient deflection and sealing effects. Moreover, the ribs can help identify the outer side and avoid assembly errors.

Although the present invention has been described above in terms of the preferred embodiments thereof, it is not intended to limit the invention, and those skilled in the art can make some modifications and refinements without departing from the spirit and scope of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims.

1, 100. . . Semiconductor process equipment

2. . . Wafer

3. . . fluid

4. . . Viscose

10. . . Crystal seat

11. . . Crystallium body

12. . . Carrier element

13. . . Fluid supply unit

14. . . Trench

141. . . Groove bottom

142. . . Groove sidewall

15. . . Crystallizer side

110, 120, 120', 120"... O-ring

121. . . First guide

121’. . . Leading section

122. . . Second guide

123. . . O-ring top surface

124. . . O-ring bottom

125. . . rib

126. . . Inner side

127. . . Outer side

128. . . O-ring body

Figure 1a shows a conventional semiconductor process equipment;

Figure 1b is an enlarged view of Part A of Figure 1a;

Figure 1c shows the prior art in which the adhesive is filled into the groove;

Figure 1d shows the case where the glue is etched by the plasma particles and is lost;

Figure 2a is a diagram showing a semiconductor process apparatus according to a first embodiment of the present invention;

Figure 2b is an enlarged view of part A1 in Figure 2a;

2c is a view showing a state in which the O-ring is separated from the semiconductor process equipment in the first embodiment;

3A is an O-ring showing a second embodiment of the present invention;

Figure 3B is an O-ring showing a third embodiment of the present invention;

Figure 3C shows an O-ring of the fourth embodiment of the present invention

2. . . Wafer

3. . . fluid

10. . . Crystal seat

11. . . Crystallium body

12. . . Carrier element

13. . . Fluid supply unit

14. . . Trench

141. . . Groove bottom

142. . . Groove sidewall

15. . . Crystallizer side

110. . . O-ring

Claims (32)

A semiconductor processing device for carrying a wafer, comprising: a crystal holder body, a fluid supply unit, and a carrier member disposed on the crystal holder body and including an upper surface for carrying the wafer and In one aspect, the fluid supply unit is disposed in the base body for providing a fluid to the wafer on the upper surface of the carrier member, a groove forming a side surface of the carrier member, and a replaceable O-ring. Among the grooves, the O-ring has a rectangular cross section. The semiconductor process device of claim 1, further comprising an extended cover member surrounding the load bearing member. The semiconductor process device of claim 1, wherein the trench has a trench width, the O-ring has an O-ring width, and the ratio of the O-ring width to the trench width is between Between 1.00 and 1.20. The semiconductor process apparatus of claim 1, wherein the trench has a trench center diameter, the O-ring has an O-ring center diameter, and the O-ring center diameter is larger than the trench center diameter The ratio is between 0.95 and 1.00. The semiconductor process apparatus of claim 1, wherein the O-ring has a first lead portion formed on a first inner edge of the O-ring. The semiconductor process apparatus of claim 5, wherein the O-ring has a second lead portion formed on the O-ring a second inner edge. The semiconductor process device of claim 6, wherein the second lead portion is located on a bottom surface of an O-ring, and a ratio of a radial width of the bottom surface of the O-ring to a radial width of the O-ring is Between 0.70 and 0.90. The semiconductor process device of claim 5, wherein the first lead portion is located on an upper surface of an O-ring, and a radial width of the top surface of the O-ring is larger than a radial width of the O-ring. The ratio is between 0.70 and 0.90. The semiconductor process equipment of claim 1, wherein the O-ring is made of rubber. The semiconductor process equipment of claim 1, wherein the material of the carrier element is ceramic. The semiconductor processing apparatus of claim 1, wherein the trench has a trench bottom surface and a trench sidewall, wherein a width of the trench bottom surface is greater than a radial width of the trench sidewall. The semiconductor process apparatus of claim 1, wherein the fluid supplied by the fluid supply unit is sealed by the O-ring. A semiconductor processing device for carrying a wafer, comprising: a crystal holder body, a fluid supply unit, and a carrier member disposed on the crystal holder body and including an upper surface for carrying the wafer and a side, the fluid supply unit is disposed in the base body for providing a fluid to the wafer on the upper surface of the carrier member, and a groove forms a side of the carrier member; a replaceable O-ring disposed in the groove, wherein the O-ring has a rectangular cross section, the O-ring having a radial width and a vertical thickness, wherein the radial width and the vertical The ratio of thickness to thickness is between 1:0.8 and 1:4. The semiconductor process device of claim 13, wherein the ratio of the radial width to the vertical thickness is between 1:2 and 1:4. The semiconductor process apparatus of claim 14, wherein the O-ring has a lead portion formed on an inner edge of the O-ring. The semiconductor process apparatus of claim 15, wherein the O-ring has only a single one of the lead portions. The semiconductor process device of claim 15, wherein the lead portion is located on a bottom surface of an O-ring. The semiconductor process apparatus of claim 15, wherein the lead portion is located on a top surface of an O-ring. The semiconductor process device of claim 12, further comprising an extended cover member surrounding the load bearing member. The semiconductor process equipment of claim 12, wherein the O-ring is made of rubber. The semiconductor process apparatus of claim 12, wherein the material of the carrier element is ceramic. The semiconductor process apparatus of claim 12, wherein the fluid supplied by the fluid supply unit is made of the O-ring Sealed. A semiconductor processing device for carrying a wafer, comprising: a crystal holder body, a fluid supply unit, and a carrier member disposed on the crystal holder body and including an upper surface for carrying the wafer and In one aspect, the fluid supply unit is disposed in the base body for providing a fluid to the wafer on the upper surface of the carrier member, a groove forming a side surface of the carrier member, and a replaceable O-ring. In the groove, wherein the O-ring has a rectangular cross section, the O-ring has an O-ring body and a rib, the O-ring body has an inner side and an outer side, the inner side contacting the The bottom of the groove is opposite to the inner side, and the rib is formed on the outer side. The semiconductor process apparatus of claim 23, wherein the O-ring has a lead portion formed on an inner edge of the O-ring. The semiconductor process apparatus of claim 24, wherein the O-ring has only a single one of the lead portions. The semiconductor process apparatus of claim 24, wherein the lead portion is located on a bottom surface of an O-ring. The semiconductor process apparatus of claim 24, wherein the lead portion is located on a top surface of an O-ring. The semiconductor process device of claim 23, further comprising an extended cover member surrounding the carrier member. Such as the semiconductor process design described in claim 23 The material of the O-ring is rubber. The semiconductor process equipment of claim 23, wherein the material of the carrier element is ceramic. The semiconductor process apparatus of claim 23, wherein the fluid supplied by the fluid supply unit is sealed by the O-ring. The semiconductor process apparatus of claim 23, wherein the O-ring body has a body radial thickness, the rib has a rib radial thickness, and the ratio of the body radial thickness to the rib radial thickness Between 3:1~12:1.