TWI503666B - Flash memory module and flash memory accessing method - Google Patents
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本發明是有關於一種快閃記憶體的存取方法,且特別是有關於一種快閃記憶體的備份資料的存取方法。 The present invention relates to a method for accessing flash memory, and more particularly to a method for accessing backup data of a flash memory.
近年來,快閃記憶體具有大記憶容量以及高抹寫速度的優勢,因此,已成為非揮發記憶體的主流。 In recent years, flash memory has the advantages of large memory capacity and high erasing speed, and therefore has become the mainstream of non-volatile memory.
然而,快閃記憶體在進行多次的資料動作後會產生損壞的風險。一旦快閃記憶體因為所屬電子裝置的設計不合適,會使得快閃記憶體的更新動作無法平均的施加在每一個記憶區塊(block)中,就會使得常用的記憶區塊因此發生毀損。而這些常發生毀損的記憶區塊通常儲存有較為重要的資料,例如所屬電子裝置的開機資料。 However, flash memory poses a risk of damage after multiple data actions. Once the flash memory is not properly designed due to the design of the associated electronic device, the update operation of the flash memory cannot be uniformly applied to each of the memory blocks, so that the commonly used memory blocks are damaged. These often damaged memory blocks usually store more important data, such as the boot data of the electronic device.
若是電子裝置的開機資料因為快閃記憶體的損壞而無法被讀取時,整個電子裝置將會無法開機而完全停擺。要使這樣的電子裝置恢復工作,總需要專業的維修人員來完成,造成使用上的諸多不方便。 If the boot data of the electronic device cannot be read due to the damage of the flash memory, the entire electronic device will not be able to be turned on and completely stopped. In order to restore such an electronic device, professional maintenance personnel are always required to complete it, resulting in many inconveniences in use.
本發明提供一種快閃記憶體的存取方法,確保電子裝置可以正常的被開機。 The invention provides a method for accessing a flash memory, which ensures that the electronic device can be turned on normally.
本發明提供一種快閃記憶體模組,配置在電子裝置上,用以確保電子裝置可以正常的被開機。 The present invention provides a flash memory module that is disposed on an electronic device to ensure that the electronic device can be powered on normally.
本發明提出一種快閃記憶體的存取方法,包括:首先,分割快閃記憶體為主要儲存區以及備用儲存區,其中主要儲存區的第一起始位址與備用儲存區的第二起始位址相差不等於0的偏移位址。依據第一起始位址為讀取指標來讀取快閃記憶體以獲得開機資料。並依據開機資料使電子裝置執行開機動作。接著,偵測開機動作正常與否,且當開機動作不正常時,提供快閃記憶體依據偏移位址來變更讀取指標為第二起始位址來讀取備用開機資料。 The present invention provides a method for accessing a flash memory, comprising: first, dividing a flash memory into a primary storage area and a backup storage area, wherein a first start address of the primary storage area and a second start of the spare storage area An offset address whose address difference is not equal to 0. The flash memory is read according to the first start address as a read indicator to obtain boot data. And according to the boot data, the electronic device performs a booting action. Then, it is detected whether the booting action is normal or not, and when the booting action is not normal, the flash memory is provided to change the read index to the second start address according to the offset address to read the standby booting data.
本發明提出一種快閃記憶體模組,配置在電子裝置上。快閃記憶體模組包括快閃記憶體以及存取位置轉換器。快閃記憶體,分割為主要儲存區以及備用儲存區。存取位置轉換器耦接快閃記憶體。主要儲存區用以儲存開機資料,備用儲存區則用以儲存開機資料以為備用開機資料。存取位置轉換器內建於快閃記憶體,用以接收第一起始位址以及開機正常信號,並依據開機正常信號、第一起始位址以及偏移位址來產生讀取指標,以提供讀取指標來讀取開機資料或備用開機資料。 The invention provides a flash memory module which is arranged on an electronic device. The flash memory module includes a flash memory and an access position converter. Flash memory, divided into primary storage area and backup storage area. The access position converter is coupled to the flash memory. The main storage area is used to store the boot data, and the spare storage area is used to store the boot data as the backup boot data. The access location converter is built in the flash memory for receiving the first start address and the power-on normal signal, and generates a read indicator according to the power-on normal signal, the first start address, and the offset address to provide the read indicator. Read indicators to read boot data or alternate boot data.
基於上述,本發明藉由在電子裝置配置的快閃記憶體中分配為主要儲存區以及備用儲存區,並在主要儲存區以及備用儲存區中皆儲存開機資料。再藉由偵測開機的成功與否來決定是否讀取備用儲存區中的開機資料以進行開機動作。如此一來,可以確保電子裝置的開機動作可以正常進行不會因為快閃記憶體的損毀而使電子裝置完全無法動作。 Based on the above, the present invention allocates the main storage area and the backup storage area in the flash memory configured by the electronic device, and stores the boot data in both the main storage area and the backup storage area. Then, by detecting the success or failure of the booting, it is determined whether to read the booting data in the spare storage area to perform the booting operation. In this way, it can be ensured that the power-on operation of the electronic device can be performed normally without causing the electronic device to be completely inoperable due to the destruction of the flash memory.
為讓本發明之上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。 The above described features and advantages of the present invention will be more apparent from the following description.
首先請參照圖1,圖1繪示本發明一實施例的快閃記憶體的存取方法的流程圖。其中,本實施例的快閃記憶體分為兩個區域,其中一個為主要儲存區,另一個為備用儲存區。而在快閃記憶體中分割兩個區域的方法,是針對快閃記憶體設定兩個不同的起始位址,並藉以區別主要儲存區以及備用儲存區所屬的記憶區塊。舉例來說,假定設定主要儲存區的起始位址為快閃記憶體實體位址000000H,並設定備用儲存區的起始位址為快閃記憶體實體位址400000H。這樣一來,快閃記憶體實體位址000000H~3FFFFFH的記憶區塊則屬於主要儲存區,而快閃記憶體實體位址400000H以後的記憶區塊則屬於為備用儲存區。 First, please refer to FIG. 1. FIG. 1 is a flowchart of a method for accessing a flash memory according to an embodiment of the present invention. The flash memory of this embodiment is divided into two areas, one of which is a primary storage area and the other is a spare storage area. The method of dividing two regions in the flash memory is to set two different start addresses for the flash memory, and thereby distinguish the main storage area and the memory block to which the spare storage area belongs. For example, assume that the starting address of the primary storage area is the flash memory entity address 000000H, and the starting address of the spare storage area is the flash memory entity address 400000H. In this way, the memory block of the flash memory entity address 000000H~3FFFFFH belongs to the main storage area, and the memory block after the flash memory entity address 400000H belongs to the spare storage area.
附帶一提的,備用儲存區的記憶容量不會被規劃為大於主要儲存區的儲存容量。 Incidentally, the memory capacity of the spare storage area is not planned to be larger than the storage capacity of the main storage area.
並且,開機資料可以被複製成為兩份,並同時儲存至主要儲存區以及備用儲存區中,其中,被儲存在備用儲存區中的開機資料又可稱為備用開機資料。 Moreover, the boot data can be copied into two copies and simultaneously stored in the main storage area and the spare storage area, wherein the boot data stored in the spare storage area can also be referred to as standby boot data.
本實施例中的快閃記憶體存取方法的步驟包括:設定主要儲存區的起始位址為讀取指標,並利用讀取指標來讀取主要儲存區以獲得儲存在主要儲存區的開機資料 (S110)。在執行讀取主要儲存區中的資料時,可以依據讀取指標並隨著讀取動作遞增讀取指標所指向的記憶體位址的方式來進行讀取。並在當讀取指標指向的記憶體位址為儲存開機資料的記憶體位址時,讀取並獲得開機資料。 The step of the flash memory access method in this embodiment includes: setting a start address of the main storage area as a read index, and reading the main storage area by using the read indicator to obtain a boot stored in the main storage area. data (S110). When the reading of the data in the main storage area is performed, the reading may be performed according to the manner in which the reading index is read and the memory address pointed to by the index is read as the reading action is incremented. And when the memory address pointed to by the reading indicator is the memory address of the boot data, the boot data is read and obtained.
在獲得開機資料後,快閃記憶體所屬的電子裝置就可以依據這個開機資料來執行開機動作(S120)。並且,針對電子裝置所進行的開機動作的狀態來進行偵測(S130)。而針對電子裝置進行開機動作的狀態的偵測方法可以在電子裝置執行開機動作後,執行一個或多個的開機測試程式,並藉以觀察電子裝置是否有針對這些開機測試程式進行對應且正常的回覆。一旦電子裝置有針對開機測試程式進行正常的回覆時,可以表示電子裝置以被正常的開機。也就是由主要儲存區所讀取的開機資料是正常的。或若是電子裝置並未針對開機測試程式進行正常的回覆時,則表示由主要儲存區所讀取的開機資料是不正常,也代表主要儲存區儲存開機資料的部份可能發生損毀。 After obtaining the booting data, the electronic device to which the flash memory belongs can perform the booting operation according to the booting data (S120). Then, detection is performed on the state of the power-on operation performed by the electronic device (S130). The detecting method for the state of the power-on operation of the electronic device may perform one or more boot test programs after the electronic device performs the booting operation, and thereby observe whether the electronic device has a corresponding and normal reply for the booting test programs. . Once the electronic device has a normal response to the boot test program, it can indicate that the electronic device is powered on normally. That is, the boot data read by the main storage area is normal. Or if the electronic device does not respond normally to the boot test program, it means that the boot data read by the main storage area is abnormal, and the part of the main storage area where the boot data is stored may be damaged.
在確認電子裝置是否有針對開機測試程式進行正常的回覆時,可以利用與執行開機測試程式同時進行的計時動作來完成。舉個例子來說明,也就是首先清除計時動作,並在執行開機測試動作時同步啟動計時動作。當計時動作發生溢位時,電子裝置尚未依據所執行的開機測試程式進行正常的回覆時,則表示電子裝置的開機動作未完成。相反的,當計時動作發生溢位前,電子裝置成功的依據所執行的開機測試程式進行正常的回覆時,則清除計時動作並 確認電子裝置的開機動作已有效的完成。 When confirming whether the electronic device has a normal response to the boot test program, it can be completed by using a timing action performed simultaneously with executing the boot test program. As an example, the timing action is first cleared, and the timing action is synchronized when the power-on test action is performed. When the timeout action occurs, if the electronic device has not performed a normal reply according to the executed boot test program, it indicates that the power-on action of the electronic device is not completed. Conversely, when the electronic device successfully performs a normal response according to the executed boot test program before the timeout action occurs, the timing action is cleared. Confirm that the power-on action of the electronic device has been effectively completed.
在當開機狀態的偵測結果表示電子裝置並未正常的開機時,則變更讀取指標至備用儲存區的起始位址,並依據新的讀取指標來讀取儲存在備用儲存區中的開機資料(S140)。如此一來,電子裝置在其主要儲存區的開機資料損毀時,依舊可以依據備用儲存區中的開機資料來進行開機,而得以維持電子裝置的正常工作能力。 When the detection result of the power-on state indicates that the electronic device is not normally turned on, the read indicator is changed to the start address of the spare storage area, and the stored in the spare storage area is read according to the new read indicator. Boot data (S140). In this way, when the boot data of the main storage area is damaged, the electronic device can still be powered on according to the boot data in the spare storage area, thereby maintaining the normal working ability of the electronic device.
在變更讀取指標的方式上,可以記錄主要儲存區與備用儲存區的起始位址的差來作為偏移位址。並在需要變更讀取指標時,直接使新的讀取指標等於主要儲存區的起始位址加上偏移位址即可。 In the manner of changing the read index, the difference between the start address of the primary storage area and the spare storage area may be recorded as the offset address. When the read indicator needs to be changed, the new read index is directly equal to the start address of the main storage area plus the offset address.
另外,當發現主要儲存區中的開機資料無法使電子裝置正常開機時,可以將由備份儲存區中所讀出的開機資料寫回主要儲存區中以覆蓋其開機資料。如此一來,在主要儲存區並非發生物理性的損壞時,可以使主要儲存區中的開機資料回復正常。 In addition, when it is found that the boot data in the main storage area cannot make the electronic device boot normally, the boot data read out from the backup storage area can be written back to the main storage area to cover the boot data. In this way, when the main storage area is not physically damaged, the boot data in the main storage area can be returned to normal.
也就是說,在本發明實施例中,當主要儲存區所儲存的開機資料無法提供所歸屬的電子裝置進行正常開機時,本發明實施例的快閃記憶體僅需透過接收電子裝置無法正常開機的資訊,就可以依據偏移位址來切換讀取指標以讀取備用儲存區中的備用開機資料來使電子裝置可以有效的被開機,維持系統的運作。 That is to say, in the embodiment of the present invention, when the booting data stored in the main storage area cannot provide the home electronic device for normal booting, the flash memory of the embodiment of the present invention only needs to be booted normally through the receiving electronic device. The information can be switched according to the offset address to read the standby boot data in the spare storage area to enable the electronic device to be effectively turned on and maintain the operation of the system.
請特別注意,主要儲存區以及備份儲存區並非僅儲存開機資料。其中,主要儲存區可以儲存電子裝置所需要儲 存的多個資料,而備份儲存區則針對主要儲存區中的重要資料(例如開機資料)進行儲存。以確保主要儲存區中的重要資料的安全性。 Please pay special attention to the fact that the main storage area and the backup storage area do not store only the boot data. Among them, the main storage area can store the storage required by the electronic device. Multiple data is stored, while the backup storage area is stored for important data (such as boot data) in the main storage area. To ensure the safety of important information in the main storage area.
為更清楚說明本案的實施方式,請參照圖2A及2B,圖2A及2B分別繪示本案實施例的動作示意圖。在圖2A的繪示中,讀取指標PTR1設定等於主要儲存區210的起始位址(實體位址ADDR=0H)。並依據讀取指標PTR1來進行快閃記憶體200的讀取動作。換言之,快閃記憶體200的實體位址ADDR=0H對應到快閃記憶體200的邏輯位址000000H。而在主要儲存區210中的開機資料無法使快閃記憶體200所屬的電子裝置正常開機時,則如圖2B所繪示的重新設定讀取指標PTR1至備份儲存區220的起始位址(實體位址ADDR=400000H)。上述的讀取指標PTR1重新動作可以藉由將主要儲存區210的起始位址加上偏移位址OFFSET來獲得新的讀取指標PTR1,其中,偏移位址OFFSET不等於0。 For a more detailed description of the implementation of the present invention, please refer to FIG. 2A and FIG. 2B. FIG. 2A and FIG. 2B respectively illustrate the operation of the embodiment of the present invention. In the illustration of FIG. 2A, the read index PTR1 is set equal to the start address of the primary storage area 210 (the physical address ADDR=0H). The reading operation of the flash memory 200 is performed in accordance with the reading index PTR1. In other words, the physical address ADDR=0H of the flash memory 200 corresponds to the logical address 000000H of the flash memory 200. When the booting data in the main storage area 210 fails to enable the electronic device to which the flash memory 200 belongs to be powered on normally, the read index PTR1 is reset to the start address of the backup storage area 220 as shown in FIG. 2B ( The physical address ADDR=40000H). The above read index PTR1 re-action can obtain a new read index PTR1 by adding the start address of the main storage area 210 to the offset address OFFSET, wherein the offset address OFFSET is not equal to zero.
在讀取指標PTR1被變更後,快閃記憶體200的實體位址ADDR=400000H對應到快閃記憶體200的邏輯位址000000H,而快閃記憶體200的實體位址ADDR=0H對應到快閃記憶體200的邏輯位址400000H。 After the read index PTR1 is changed, the physical address ADDR=4000K of the flash memory 200 corresponds to the logical address 000000H of the flash memory 200, and the physical address ADDR=0H of the flash memory 200 corresponds to fast. The logical address of the flash memory 200 is 400000H.
當依據備用儲存區220的起始位址為新的讀取指標PTR1對快閃記憶體200進行讀取時,當讀取動作進行至備用儲存區220的最後位址時,重新使讀取指標等於主要儲存區210的起始位址並對快閃記憶體200繼續進行讀取。 When the flash memory 200 is read according to the start address of the spare storage area 220 as the new read index PTR1, when the read operation proceeds to the last address of the spare storage area 220, the read index is re-enabled. Equal to the start address of the primary storage area 210 and continue reading of the flash memory 200.
以下請參照圖3,圖3繪示本發明實施例的快閃記憶體300的示意圖。快閃記憶體模組300配置在一電子裝置上。快閃記憶體300包括存取位置轉換器310、主要儲存區321、備用儲存區322以及計時器311。存取位置轉換器310可為位址解碼器(address decoder),其耦接主要儲存區321以及備用儲存區322。主要儲存區321以及備用儲存區322分別用以儲存開機資料以及備用開機資料。存取位置轉換器310依據起始位址ADDR為讀取指標來讀取快閃記憶體300以獲得開機資料並依據開機資料使電子裝置執行開機動作。 Please refer to FIG. 3 . FIG. 3 is a schematic diagram of the flash memory 300 according to an embodiment of the present invention. The flash memory module 300 is disposed on an electronic device. The flash memory 300 includes an access location converter 310, a primary storage area 321, a spare storage area 322, and a timer 311. The access location converter 310 can be an address decoder coupled to the primary storage area 321 and the spare storage area 322. The primary storage area 321 and the backup storage area 322 are used to store boot data and backup boot data, respectively. The access location converter 310 reads the flash memory 300 according to the start address ADDR as a read indicator to obtain boot data and causes the electronic device to perform a boot operation according to the boot data.
在本發明實施例的電子裝置進行開機後,電子裝置本身會進行開機的正常與否的偵測動作,這個偵測的結果可以透過計時器330來獲得。簡單來說,在電子裝置進行開機的正常與否進行偵測時,計時器330會對應啟動其計時動作。若是電子裝置的開機動作正常時,這個計時動作會被電子裝置即時的重置(reset)而不致於產生溢位。相反的,若是電子裝置的開機動作不正常時,計時器330的計時動作將不會被重置而會產生溢位,用來表示這個溢位的狀態的溢位信號OV則被作為開機正常信號以傳送至存取位置轉換器310。而存取位置轉換器310即依據這個溢位信號OV來依據偏移位址OFFADD轉換讀取指標至備用儲存區322以讀取備用開機資料。 After the electronic device of the embodiment of the present invention is powered on, the electronic device itself performs a normal or non-detecting action of the power-on, and the result of the detection can be obtained by the timer 330. In brief, when the electronic device is turned on or off, the timer 330 will start its timing action correspondingly. If the electronic device's power-on action is normal, the timed action will be reset by the electronic device without causing an overflow. Conversely, if the power-on action of the electronic device is abnormal, the timer action of the timer 330 will not be reset and an overflow will occur, and the overflow signal OV indicating the state of the overflow is used as the power-on normal signal. Transfer to the access location converter 310. The access location converter 310 converts the read indicator to the spare storage area 322 according to the overflow address OV according to the overflow signal OV to read the standby boot data.
請注意,計時器330也可以改用內建在快閃記憶體300中的計時器311來建構。並且,上述的計時器311可以是 一個硬體電路或是透過軟體的方式來實施。 Please note that the timer 330 can also be constructed using the timer 311 built into the flash memory 300 instead. And, the above timer 311 can be A hardware circuit is implemented by means of software.
綜上所述,本發明利用偵測開機動作的正常與否,來判定主要儲存區的開機資料是否損毀,並在主要儲存區的開機資料損毀時,透過快閃記憶體內部所提供的存取位置轉換器來依據開機正常信號以及偏移位址來變更讀取指標指向備用儲存區的起始位址來由備用儲存區讀取備用開機資料,以使電子裝置可以正常開機。 In summary, the present invention determines whether the boot data of the main storage area is damaged by detecting the normality of the booting operation, and accesses provided through the internal flash memory when the boot data of the main storage area is damaged. The position converter changes the read indicator to the start address of the spare storage area according to the boot normal signal and the offset address to read the standby boot data from the spare storage area, so that the electronic device can be normally turned on.
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作些許之更動與潤飾,故本發明之保護範圍當視後附之申請專利範圍所界定者為準。 Although the present invention has been disclosed in the above embodiments, it is not intended to limit the invention, and any one of ordinary skill in the art can make some modifications and refinements without departing from the spirit and scope of the invention. The scope of the invention is defined by the scope of the appended claims.
S110~S140‧‧‧存取方法的步驟 Steps for S110~S140‧‧‧ access method
200‧‧‧快閃記憶體 200‧‧‧flash memory
210、321‧‧‧主要儲存區 210, 321‧‧‧ main storage areas
220、322‧‧‧備用儲存區 220, 322‧‧‧ spare storage area
300‧‧‧快閃記憶體 300‧‧‧flash memory
310‧‧‧存取位置轉換器 310‧‧‧Access position converter
311、330‧‧‧計時器 311, 330‧‧‧ timer
PTR1‧‧‧讀取指標 PTR1‧‧‧ reading indicators
OFFSET、OFFADD‧‧‧偏移位址 OFFSET, OFFADD‧‧‧ offset address
ADDR‧‧‧位址 ADDR‧‧‧ address
圖1繪示本發明一實施例的快閃記憶體的存取方法的流程圖。 FIG. 1 is a flow chart of a method for accessing a flash memory according to an embodiment of the invention.
圖2A及2B分別繪示本案實施例的動作示意圖。 2A and 2B are schematic views respectively showing the operation of the embodiment of the present invention.
圖3繪示本發明實施例的快閃記憶體300的示意圖。 FIG. 3 is a schematic diagram of a flash memory 300 according to an embodiment of the present invention.
S110~S140‧‧‧存取方法的步驟 Steps for S110~S140‧‧‧ access method
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