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TWI502005B - Light-reflective film, light-reflective laminate, and light-reflective circuit board - Google Patents

Light-reflective film, light-reflective laminate, and light-reflective circuit board Download PDF

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TWI502005B
TWI502005B TW100110251A TW100110251A TWI502005B TW I502005 B TWI502005 B TW I502005B TW 100110251 A TW100110251 A TW 100110251A TW 100110251 A TW100110251 A TW 100110251A TW I502005 B TWI502005 B TW I502005B
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light
film
reflective
liquid crystal
thermoplastic liquid
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TW201213406A (en
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Takafumi Konno
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Kuraray Co
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    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/08Mirrors
    • G02B5/0808Mirrors having a single reflecting layer

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Laminated Bodies (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Fastening Of Light Sources Or Lamp Holders (AREA)
  • Led Device Packages (AREA)

Description

光反射性薄膜、光反射性積層體及光反射性電路基板Light reflective film, light reflective laminate, and light reflective circuit substrate 〔相關申請案〕[related application]

本案係主張2010年3月26日在日本國提出申請之日本特願第2010-071758號之優先權者,其全部內容應參照併入本申請案之一部分。The present invention claims the priority of Japanese Patent Application No. 2010-071758, filed on Jan. 26, 2010, the entire content of which is hereby incorporated by reference.

本發明是關於一種適合用作為白色LED等發光元件之安裝基板、光反射性優異之光反射性薄膜、以及使用它的光反射性積層體及光反射性電路基板。The present invention relates to a mounting substrate suitable for use as a light-emitting element such as a white LED, a light-reflective film excellent in light reflectivity, and a light-reflective laminate and a light-reflective circuit substrate using the same.

近年來,比電燈泡、螢光燈等可大幅地減少耗電之LED是受到注目。然而,由於對LED等發光元件要求高輸出功率化,對用於搭配LED的基板則被要求耐熱對策。In recent years, LEDs that can greatly reduce power consumption, such as electric bulbs and fluorescent lamps, have attracted attention. However, since high-output power is required for a light-emitting element such as an LED, a heat-resistant countermeasure is required for a substrate for use with an LED.

例如針對於如上述之發光元件之安裝基板,在專利文獻1(日本特開第2008-169513號公報)中,揭示一種電子安裝基板,其係將以光反射性熱傳導性樹脂組成物所形成之光反射性熱傳導性填料,經由電絕緣層及/或電絕緣性接著層而積層於電子安裝基板的配線圖案上,且該光反射性熱傳導性樹脂組成物係含有經對特定的碳纖維填料被覆具有光反射性的層之光反射性熱傳導樹脂層、與黏合劑樹脂者。For example, an electronically mounted substrate formed by a light-reflective thermally conductive resin composition is disclosed in the above-mentioned Japanese Patent Laid-Open Publication No. 2008-169513. The light-reflective thermally conductive filler is laminated on the wiring pattern of the electronic component substrate via the electrically insulating layer and/or the electrically insulating adhesive layer, and the light-reflective thermally conductive resin composition is coated with a specific carbon fiber filler. A light-reflective layer of a light-reflective heat-conductive resin layer and a binder resin.

若為該電子安裝基板,藉由將特定的填料混合在黏合劑樹脂的樹脂組成物來形成光反射性熱傳導樹脂層,則可提高安裝基板表面之光反射性與熱傳導性之兩者。In the case of the electronic mounting substrate, by forming a light-reflective heat-conductive resin layer by mixing a specific filler with a resin composition of the binder resin, both light reflectivity and thermal conductivity of the surface of the mounting substrate can be improved.

〔先前技術文獻〕[Previous Technical Literature] (專利文獻)(Patent Literature)

專利文獻1:日本特開2008-169513號公報Patent Document 1: Japanese Patent Laid-Open Publication No. 2008-169513

然而,若為專利文獻1之電子安裝基板,由於其係將經積層光反射層的碳纖維作為特殊的光反射性填料而使用,因此變成製程繁雜且高成本。並且,若使用如上述之光反射性填料的基板,由於光反射性填料與黏合劑樹脂之熱膨脹係數不同,在如發光元件等之在ON、OFF(開、關)動作中被重複暴露在高熱中的情況,則有造成在黏合劑樹脂發生龜裂等原因的顧慮。However, in the case of the electronically mounted substrate of Patent Document 1, since the carbon fiber of the laminated light-reflecting layer is used as a special light-reflective filler, the process is complicated and high in cost. Further, when the substrate of the light-reflective filler as described above is used, since the thermal expansion coefficient of the light-reflective filler and the adhesive resin are different, it is repeatedly exposed to high heat in an ON, OFF (on, off) operation such as a light-emitting element. In the case of the case, there is a concern that cracks occur in the binder resin.

因此,本發明之一實施形態之目的係提供一種即使不使用光反射性填料也可達成優異的光反射性之光反射性薄膜、光反射性積層體及光反射性電路基板。Therefore, an object of an embodiment of the present invention is to provide a light-reflective film, a light-reflective laminate, and a light-reflective circuit substrate which can achieve excellent light reflectivity without using a light-reflective filler.

本發明之其他實施形態之目的係提供一種高耐熱性,同時光反射性優異之光反射性薄膜、光反射性積層體及光反射性電路基板。Another object of the present invention is to provide a light-reflective film, a light-reflective laminate, and a light-reflective circuit board which are excellent in heat resistance and excellent in light reflectivity.

本發明之再一實施形態之目的係提供一種散熱性優異,同時光反射性優異之光反射性薄膜、光反射性積層體及光反射性電路基板。Another object of the present invention is to provide a light-reflective film, a light-reflective laminate, and a light-reflective circuit board which are excellent in heat dissipation and excellent in light reflectivity.

本發明之發明人等為達成上述目的而經專心研討結果發現: (1)若為經特定的成型方法所獲得液晶聚合物薄膜,則可在薄膜之厚度方向控制結晶域(crystal domain)之數目;(2)對薄膜由入射面所入射的光,入射後由非晶基質(non-crystal matrix)朝結晶域進行時,發現會在結晶域與非晶基質之界面發生反射;並且,(3)其結果,當結晶域之數目朝厚度方向增加時,則在薄膜內部可在結晶域與非晶基質之界面提高朝薄膜之入射面方向所反射的光之比例;(4)與其同時,發現可減少朝相對於薄膜之入射面的出射面所透射之光的比例;並且,(5)藉由此等在結晶域的光之反射,發現則可提高薄膜整體之反射率;並且,更進一步,(6)藉由將具有如上述光反射性之液晶聚合物薄膜,在保持著其光反射性之狀態下與導電體層或電路基板層進行接合,發現則可形成光反射性優異的積層體或電路基板而終於達成本發明。The inventors of the present invention have found out through intensive studies to achieve the above objectives: (1) If the liquid crystal polymer film obtained by a specific molding method is used, the number of crystal domains can be controlled in the thickness direction of the film; (2) the light incident on the film from the incident surface is incident upon When the non-crystal matrix is carried out toward the crystal domain, it is found that reflection occurs at the interface between the crystal domain and the amorphous matrix; and, (3) as a result, when the number of crystal domains increases toward the thickness direction, The inside of the film can increase the ratio of the light reflected toward the incident surface of the film at the interface between the crystal domain and the amorphous matrix; (4) at the same time, it is found that the light transmitted through the exit surface relative to the incident surface of the film can be reduced. And (5) by reflecting the light in the crystal domain, thereby finding that the reflectance of the entire film can be improved; and, further, (6) by using a liquid crystal polymer having light reflectance as described above The film is bonded to the conductor layer or the circuit board layer while maintaining the light reflectivity, and it has been found that a laminate or a circuit board having excellent light reflectivity can be formed, and the present invention has finally been achieved.

亦即,本發明之一實施模式係一種光反射性積層體,其係至少以光反射性薄膜、與經由接著劑層而接合於光反射性薄膜之至少一面的導電體層或電路基板層所構成。該光反射性薄膜係在非晶基質中存在結晶域之熱塑性液晶聚合物薄膜、且該結晶域係在薄膜之厚度方向每10μm存在8至40個之薄膜。該薄膜較佳為例如對470nm波長之光反射率為60%以上。That is, an embodiment of the present invention is a light-reflective laminate which is composed of at least a light-reflective film and a conductor layer or a circuit board layer bonded to at least one surface of the light-reflective film via an adhesive layer. . The light-reflective film is a thermoplastic liquid crystal polymer film in which a crystal domain exists in an amorphous matrix, and the crystal domain has 8 to 40 films per 10 μm in the thickness direction of the film. The film preferably has a light reflectance of, for example, 60% or more for a wavelength of 470 nm.

此外,前述熱塑性液晶聚合物可為熱塑性液晶聚酯或熱塑性液晶聚酯醯胺。前述薄膜係具有源於聚合物之耐熱性,例如前述薄膜之熔點可為約250℃至360℃。Further, the aforementioned thermoplastic liquid crystal polymer may be a thermoplastic liquid crystal polyester or a thermoplastic liquid crystal polyester decylamine. The foregoing film has heat resistance derived from a polymer, and for example, the film may have a melting point of about 250 ° C to 360 ° C.

前述光反射性積層體可為例如對470nm波長之光反射率為60%以上,及/或也可為平面方向之熱傳導率為1W/m.K以上。The light-reflective laminate may have, for example, a light reflectance of 60% or more for a wavelength of 470 nm, and/or a thermal conductivity of 1 W/m for a planar direction. K or more.

並且,本發明之其他實施模式也包括:一種光反射性電路基板,其係將前述光反射性積層體加以電路加工而構成,前述光反射性電路基板較佳為例如為安裝發光元件而使用。Further, another embodiment of the present invention also includes a light-reflective circuit substrate which is formed by circuit-processing the light-reflective laminated body, and the light-reflective circuit substrate is preferably used by, for example, mounting a light-emitting element.

並且,本發明之其他實施模式也包括:一種光反射性積層體之製造方法,其係積層光反射性薄膜與導電體層或電路基板層而製造光反射性積層體者,該製造方法係包括:對前述光反射性薄膜之至少一面,使用接著劑將光反射性薄膜之接著劑塗布面與導電體層或電路基板層加以壓著之接合步驟;該光反射性薄膜係由熱塑性液晶聚合物薄膜所構成,且在經與導電體層或電路基板層接合後之熱塑性液晶聚合物薄膜,則在非晶基質中存在結晶域,且該結晶域係在薄膜之厚度方向每10μm存在8至40個。Furthermore, another embodiment of the present invention includes a method of producing a light-reflective laminate, which is a method of producing a light-reflective laminate by layering a light-reflective film, a conductor layer or a circuit board layer, and the manufacturing method includes: a bonding step of bonding an adhesive-coated surface of the light-reflective film to a conductor layer or a circuit board layer using at least one surface of the light-reflective film; the light-reflective film is made of a thermoplastic liquid crystal polymer film In the thermoplastic liquid crystal polymer film which is bonded to the conductor layer or the circuit board layer, a crystal domain exists in the amorphous matrix, and the crystal domain exists in the thickness direction of the film in the range of 8 to 40 per 10 μm.

在該製造方法之接合步驟中,光反射性薄膜與導電體層或電路基板層係可在低於光反射性薄膜之熔點的溫度下加熱而壓著、或在非加熱下加以壓著。In the bonding step of the manufacturing method, the light reflective film and the conductor layer or the circuit substrate layer may be heated at a temperature lower than the melting point of the light reflective film to be pressed or pressed without heating.

此外,本發明之其他實施模式也包括:一種光反射性薄膜,其係用於經由接著劑層而與導電體層或電路基板層接合以形成光反射性積層體者,該光反射性薄膜係由熱塑性液晶聚合物薄膜所構成,且該熱塑性液晶聚合物薄膜係在非晶基質中存在結晶域者,且該結晶域係在薄膜之厚度方向每10μm存在8至40個。Further, another embodiment mode of the present invention also includes a light-reflective film for bonding to a conductor layer or a circuit substrate layer via an adhesive layer to form a light-reflective laminate, the light-reflective film being The thermoplastic liquid crystal polymer film is composed of a crystal domain in an amorphous matrix, and the crystal domain is present in an amount of 8 to 40 per 10 μm in the thickness direction of the film.

如上述之光反射性薄膜,其對470nm波長之光反射率是也可為60%以上、及/或光反射性薄膜之平面方向之熱傳導率也可為0.8W/m.K以上。The light reflective film as described above may have a light reflectance of 60% or more for a wavelength of 470 nm, and/or a thermal conductivity of 0.8 W/m in a planar direction of the light reflective film. K or more.

並且,本發明之其他實施模式也包括:一種電路材料,其係以光反射性薄膜所構成者,該光反射性薄膜係由熱塑性液晶聚合物薄膜所構成,且該熱塑性液晶聚合物薄膜係在非晶基質中存在結晶域者,且該結晶域係在薄膜之厚度方向每10μm存在8至40個。Furthermore, another embodiment mode of the present invention also includes a circuit material which is composed of a light reflective film which is composed of a thermoplastic liquid crystal polymer film, and the thermoplastic liquid crystal polymer film is The crystal domain exists in the amorphous matrix, and the crystal domain exists in the thickness direction of the film in the range of 8 to 40 per 10 μm.

並且,本發明之其他實施模式也包括:一種為將光反射性薄膜使用於光反射性積層體之方法,該方法係包括藉由在該光反射性薄膜之至少一面接合導電體層或電路基板層而形成光反射性積層體之步驟,該光反射性薄膜係由熱塑性液晶聚合物薄膜所構成,且 在該光反射性積層體中,該熱塑性液晶聚合物薄膜係在非晶基質中存在結晶域,且該結晶域係在薄膜之厚度方向每10μm存在8至40個。Furthermore, another embodiment of the present invention also includes a method for applying a light reflective film to a light reflective laminate, the method comprising bonding a conductor layer or a circuit substrate layer on at least one side of the light reflective film. a step of forming a light-reflective laminate, the light-reflective film being composed of a thermoplastic liquid crystal polymer film, and In the light-reflective laminate, the thermoplastic liquid crystal polymer film has a crystal domain in the amorphous matrix, and the crystal domain exists in the thickness direction of the film in the range of 8 to 40 per 10 μm.

本發明之光反射性薄膜及光反射性積層體,由於在薄膜內具有許多結晶域,可將入射於薄膜之光由結晶域與非晶基質界面加以反射而提高薄膜整體之反射率。In the light-reflective film and the light-reflective laminate of the present invention, since a plurality of crystal domains are provided in the film, the light incident on the film can be reflected from the interface between the crystal domain and the amorphous substrate, thereby improving the reflectance of the entire film.

並且,由於使用特定的液晶聚合物,不僅可提高薄膜之熔點,也可提高其散熱性,即使在用作為電路基板,特別是LED(發光二極體)等發光元件的電路基板時,也可有效地抑制因熱而造成薄膜特性之降低。Further, since a specific liquid crystal polymer is used, not only the melting point of the film but also the heat dissipation property can be improved, and even when it is used as a circuit board of a circuit board, particularly a light-emitting element such as an LED (Light Emitting Diode), Effectively suppressing the decrease in film properties due to heat.

此外,本發明之光反射性基板,由於其係由特定的光反射性薄膜所形成,即使在未設置光反射層的情況,也可由構成基板的高分子材料本身而獲得光反射性,同時具有優異的耐熱性及/或散熱性。因此,可用作為被要求高輸出功率的發光元件等之安裝基板。Further, since the light-reflective substrate of the present invention is formed of a specific light-reflective film, light reflectivity can be obtained from the polymer material constituting the substrate even when the light-reflecting layer is not provided. Excellent heat resistance and/or heat dissipation. Therefore, it can be used as a mounting substrate such as a light-emitting element requiring high output power.

本發明可由在下文中參考所附圖式之較佳的實施模式之說明而更明確理解。但是,實施模式及圖式係僅用於圖示及說明者,理應不可用作為限定發明範圍之用。本發明之範圍係根據本說明書中之申請專利範圍而定。The invention may be more clearly understood from the following description of the preferred embodiments of the drawings. However, the mode of implementation and the drawings are for illustrative purposes only and should not be used as limiting the scope of the invention. The scope of the present invention is determined by the scope of the claims in this specification.

〔本發明之實施方式〕[Embodiment of the Invention]

本發明之光反射性薄膜係以在非晶基質中存在結晶域之熱塑性液晶聚合物所構成。The light reflective film of the present invention is composed of a thermoplastic liquid crystal polymer having a crystal domain present in an amorphous matrix.

(熱塑性液晶聚合物)(thermoplastic liquid crystal polymer)

熱塑性液晶聚合物係以可加以熔融成型之液晶性聚合物(或可形成光學異向性的熔融相之聚合物)所構成,該熱塑性液晶聚合物,只要其為可加以熔融成型之液晶性聚合物時,則對於特別是其化學性構成是並無特殊限制者,可列舉例如熱塑性液晶聚酯、或經對此導入醯胺鍵之熱塑性液晶聚酯醯胺等。The thermoplastic liquid crystal polymer is composed of a liquid crystalline polymer (or a polymer capable of forming an optically anisotropic molten phase) which can be melt-molded, as long as it is a liquid crystalline polymer which can be melt-molded. In the case of the material, the chemical composition is not particularly limited, and examples thereof include a thermoplastic liquid crystal polyester or a thermoplastic liquid crystal polyester decylamine having a guanamine bond introduced thereto.

另外,熱塑性液晶聚合物是也可為在芳香族聚酯或芳香族聚酯醯胺中,更進一步導入醯亞胺鍵、碳酸酯鍵、碳化二亞胺鍵或異三聚氰酸酯鍵等之源於異氰酸酯之鍵等之聚合物。Further, the thermoplastic liquid crystal polymer may further contain a ruthenium bond, a carbonate bond, a carbodiimide bond or an isomeric cyanate bond in an aromatic polyester or an aromatic polyester guanamine. A polymer derived from a bond of an isocyanate or the like.

可使用於本發明之熱塑性液晶聚合物的具體實例是可列舉在下文中所例示之可分類成(1)至(4)之化合物及可衍生自其衍生物之習知的熱塑性液晶聚酯及熱塑性液晶聚酯醯胺。但是,若欲形成可形成光學異向性的熔融相之聚合物,不用說各種原料化合物之組合應有適當的範圍。Specific examples of the thermoplastic liquid crystal polymer which can be used in the present invention are exemplified by the compounds exemplified below which can be classified into (1) to (4) and the conventional thermoplastic liquid crystal polyesters and thermoplastics which can be derived from the derivatives thereof. Liquid crystal polyester decylamine. However, if a polymer which can form an optically anisotropic molten phase is to be formed, it is needless to say that a combination of various raw material compounds should have an appropriate range.

(1)芳香族或脂肪族二羥基化合物(代表例參閱表1)(1) Aromatic or aliphatic dihydroxy compounds (for representative examples, see Table 1)

(2)芳香族或脂肪族二羧酸(代表例參閱表2)(2) Aromatic or aliphatic dicarboxylic acids (see Table 2 for representative examples)

(3)芳香族羥基羧酸(代表例參閱表3)(3) Aromatic hydroxycarboxylic acid (for representative examples, see Table 3)

(4)芳香族二胺、芳香族羥基胺或芳香族胺基羧酸(代表例參閱表4)(4) Aromatic diamine, aromatic hydroxylamine or aromatic aminocarboxylic acid (for representative examples, see Table 4)

可由此等原料化合物而獲得之液晶聚合物的代表例是可列舉具有如表5及6所示結構單元之共聚物。Representative examples of the liquid crystal polymer which can be obtained by such a raw material compound include a copolymer having a structural unit as shown in Tables 5 and 6.

在此等共聚物中,較佳為至少含有對羥基苯甲酸及/或6-羥基-2-萘甲酸作為重複單元之聚合物,特佳為:(i)含有對羥基苯甲酸與6-羥基-2-萘甲酸的重複單元之聚合物;(ii)含有選自由對羥基苯甲酸及6-羥基-2-萘甲酸所構成的群組中之至少一種芳香族羥基羧酸、選自由4,4’-二羥基聯苯及氫醌所構成的群組中之至少一種芳香族二醇、及選自由對苯二甲酸、間苯二甲酸及2,6-萘二甲酸所構成的群組中之至少一種芳香族二羧酸的重複單元之聚合物。Among these copolymers, a polymer containing at least p-hydroxybenzoic acid and/or 6-hydroxy-2-naphthoic acid as a repeating unit is preferred, and it is particularly preferred that: (i) contains p-hydroxybenzoic acid and 6-hydroxyl group. a polymer of a repeating unit of -2-naphthoic acid; (ii) comprising at least one aromatic hydroxycarboxylic acid selected from the group consisting of p-hydroxybenzoic acid and 6-hydroxy-2-naphthoic acid, selected from the group consisting of 4, At least one aromatic diol in the group consisting of 4'-dihydroxybiphenyl and hydroquinone, and a group selected from the group consisting of terephthalic acid, isophthalic acid and 2,6-naphthalene dicarboxylic acid a polymer of at least one repeating unit of an aromatic dicarboxylic acid.

例如在(i)之聚合物的情況,亦即,在熱塑性液晶聚合物為至少含有對羥基苯甲酸與6-羥基-2-萘甲酸的重複單元的情況,則在液晶聚合物中,重複單元(A)之對羥基苯甲酸與重複單元(B)之6-羥基-2-萘甲酸的莫耳比(A)/(B),較佳為(A)/(B)=約10/90至90/10,更佳為(A)/(B)=約50/50至85/15,進一步更佳為(A)/(B)=約60/40至80/20。For example, in the case of the polymer of (i), that is, in the case where the thermoplastic liquid crystal polymer is a repeating unit containing at least p-hydroxybenzoic acid and 6-hydroxy-2-naphthoic acid, in the liquid crystal polymer, the repeating unit The molar ratio (A)/(B) of the p-hydroxybenzoic acid of (A) to the 6-hydroxy-2-naphthoic acid of the repeating unit (B), preferably (A) / (B) = about 10/90 Up to 90/10, more preferably (A) / (B) = about 50/50 to 85/15, still more preferably (A) / (B) = about 60/40 to 80/20.

此外,在(ii)之聚合物的情況,亦即,選自由對羥基苯甲酸及6-羥基-2-萘甲酸所構成的群組中之至少一種芳香族羥基羧酸(C)、選自由4,4’-二羥基聯苯及氫醌所構成的群組中之至少一種芳香族二醇(D)、與選自由對苯二甲酸、間苯二甲酸及2,6-萘二甲酸所構成的群組中之至少一種芳香族二羧酸(E),在液晶聚合物中,各重複單元的莫耳比是可為芳香族羥基羧酸(C):前述芳香族二醇(D):前述芳香族二羧酸(E)=約30至80:35至10:35至10,更佳為(C):(D):(E)=約35至75:32.5至12.5:32.5至12.5,進一步更佳為(C):(D):(E)=約40至70:30至15:30至15。Further, in the case of the polymer of (ii), that is, at least one aromatic hydroxycarboxylic acid (C) selected from the group consisting of p-hydroxybenzoic acid and 6-hydroxy-2-naphthoic acid, selected from At least one aromatic diol (D) in the group consisting of 4,4'-dihydroxybiphenyl and hydroquinone, and selected from the group consisting of terephthalic acid, isophthalic acid and 2,6-naphthalene dicarboxylic acid At least one aromatic dicarboxylic acid (E) in the group formed, in the liquid crystal polymer, the molar ratio of each repeating unit may be an aromatic hydroxycarboxylic acid (C): the aforementioned aromatic diol (D) : the aforementioned aromatic dicarboxylic acid (E) = about 30 to 80: 35 to 10: 35 to 10, more preferably (C): (D): (E) = about 35 to 75: 32.5 to 12.5: 32.5 to 12.5, further preferably (C): (D): (E) = about 40 to 70:30 to 15:30 to 15.

此外,源於芳香族二羧酸之重複結構單元與源於芳香族二醇之重複結構單元的莫耳比較佳為(D)/(E)=95/100至100/95。若不在該範圍時,則有聚合度無法提高而導致機械強度降低的傾向。Further, the molar structure derived from the repeating structural unit of the aromatic dicarboxylic acid and the repeating structural unit derived from the aromatic diol is preferably (D) / (E) = 95 / 100 to 100 / 95. If it is not in this range, the degree of polymerization cannot be increased, and the mechanical strength tends to decrease.

再者,在本發明所謂的「在熔融時之光學異向性」是例如可將試料載放在高溫載物台上,在氮氣大氣下升溫加熱,觀察試料之透射光而加以認定。In the present invention, the "optical anisotropy at the time of melting" is, for example, a sample can be placed on a high-temperature stage, heated and heated in a nitrogen atmosphere, and the transmitted light of the sample can be observed and identified.

較佳的熱塑性液晶聚合物是熔點(在下文中,稱為「Mp」)為在250至360℃之範圍者,更佳為Mp為260至350℃者。再者,Mp是可藉由使用示差掃描熱量測定計測定會顯現主吸熱峰的溫度而測得。The preferred thermoplastic liquid crystal polymer has a melting point (hereinafter, referred to as "Mp") of from 250 to 360 ° C, more preferably from 260 to 350 ° C. Further, Mp can be measured by measuring the temperature at which the main endothermic peak is exhibited by using a differential scanning calorimeter.

在前述熱塑性液晶聚合物中,可在不致於損及本發明之功效範圍內,添加聚對苯二甲酸乙二醇酯、經改質之聚對苯二甲酸乙二醇酯、聚烯烴、聚碳酸酯、聚芳酯、聚醯胺、聚苯硫、聚酯醚酮、氟樹脂等之熱塑性聚合物、各種添加劑、填充劑等。In the aforementioned thermoplastic liquid crystal polymer, polyethylene terephthalate, modified polyethylene terephthalate, polyolefin, poly can be added within a range that does not impair the efficacy of the present invention. Thermoplastic polymers such as carbonates, polyarylates, polyamines, polyphenylene sulfides, polyester ether ketones, fluororesins, various additives, fillers, and the like.

可在本發明使用之熱塑性液晶聚合物薄膜是可將熱塑性液晶聚合物加以擠出成型而獲得。只要是能控制熱塑性液晶聚合物之結晶域結構,則可使用任意的擠出成型法,例如可藉由吹塑膨脹法來控制結晶域結構。The thermoplastic liquid crystal polymer film which can be used in the present invention can be obtained by extrusion molding a thermoplastic liquid crystal polymer. Any extrusion molding method can be used as long as it can control the crystal domain structure of the thermoplastic liquid crystal polymer, and for example, the crystal domain structure can be controlled by a blow molding method.

若為吹塑膨脹法,則對經由環形模具所熔融擠出的圓筒狀薄片,以特定的拉伸比(draw ratio)(相當於MD(縱向)方向之延伸倍率)及吹脹比(blow ratio)(相當於TD(寬度方向)方向之延伸倍率)而實施延伸,其延伸倍率,以MD方向之延伸倍率(或拉伸比)與TD方向之延伸倍率(或吹脹比)的總計延伸倍率(亦即,拉伸比×吹脹比)計,則可為例如5倍以上,較佳為10倍以上,更佳為13倍以上。此外,總計延伸倍率之上限是可因應薄膜之厚度等而適當地設定,例如總計延伸倍率也可為30倍以下。In the case of the blow molding method, the cylindrical sheet which is melt-extruded through the annular die has a specific draw ratio (equivalent to the MD (longitudinal direction) stretching ratio) and a blow ratio (blow). Ratio) (corresponding to the stretching ratio in the TD (width direction) direction), the stretching ratio, the stretching ratio in the MD direction, and the stretching ratio (or the stretching ratio) in the TD direction are extended in total. The magnification (that is, the draw ratio × the blow ratio) may be, for example, 5 times or more, preferably 10 times or more, more preferably 13 times or more. Further, the upper limit of the total stretching ratio may be appropriately set depending on the thickness of the film or the like, and for example, the total stretching ratio may be 30 times or less.

並且,由模具熔融擠出時熱塑性聚合物在模具區域所受到之模具剪切速率(有時候,則簡稱為「剪切速率 」)是可因應所欲製膜的厚度等而選擇300秒-1 以上(例如350至5000秒-1 ),較佳為從約400至4000秒-1 中選擇。Further, the mold shear rate (sometimes referred to simply as "shear rate") of the thermoplastic polymer in the mold region when melted and extruded by the mold is selected in accordance with the thickness of the film to be formed, etc., 300 seconds -1 The above (e.g., 350 to 5000 sec -1 ) is preferably selected from about 400 to 4000 sec -1 .

藉由如上述之擠出成型,在本發明則可形成具有特定的結晶域結構之液晶聚合物薄膜。In the present invention, a liquid crystal polymer film having a specific crystal domain structure can be formed by extrusion molding as described above.

再者,對經擠出成型後之薄膜也可實施習知或慣用之熱處理,但是較佳為在不致因熱處理而導致域結構會大幅地變化的範圍內實施。若結晶域之數目會少於本發明所規定的範圍時,則可不一定必須施加熱處理。Further, a conventional or conventional heat treatment may be applied to the film after extrusion molding, but it is preferably carried out within a range that does not cause a large change in the domain structure due to heat treatment. If the number of crystal domains is less than the range specified by the present invention, heat treatment may not necessarily be applied.

此外,對熱塑性液晶聚合物薄膜,也可在擠出成型後因應需要而施加延伸。延伸方法本身是習知的雙軸向延伸、單軸向延伸中任一者皆可採用,由於更容易控制分子配向度,較佳為雙軸向延伸。此外,延伸是可使用習知的單軸向延伸機、同時雙軸向延伸機、或逐次雙軸向延伸機等。Further, the thermoplastic liquid crystal polymer film may be stretched as needed after extrusion molding as needed. The extension method itself is either a conventional biaxial extension or a uniaxial extension, and since it is easier to control the molecular orientation, it is preferably a biaxial extension. Further, the extension may be a conventional uniaxial stretching machine, a simultaneous biaxial stretching machine, or a sequential biaxial stretching machine or the like.

(光反射性薄膜)(light reflective film)

若為以前述熱塑性液晶聚合物薄膜所構成的本發明之光反射性薄膜,則在非晶基質中有結晶域存在,且結晶域之數目是在薄膜之厚度方向每10μm為8至40個,較佳為10至35個,更佳也可為約12至30個。再者,該結晶域之個數是以後述實施例所揭述之方法所測定之值。再者,該薄膜較佳為用於經由接著劑層而與導電體層或電路基板層接合以形成光反射性積層體。In the case of the light-reflective film of the present invention comprising the thermoplastic liquid crystal polymer film, a crystalline domain exists in the amorphous matrix, and the number of crystal domains is 8 to 40 per 10 μm in the thickness direction of the film. It is preferably from 10 to 35, more preferably from about 12 to 30. Further, the number of the crystal domains is a value measured by the method described in the examples below. Further, the film is preferably used for bonding to a conductor layer or a circuit board layer via an adhesive layer to form a light-reflective laminate.

若為本發明之光反射性薄膜,在入射於薄膜之光衝突到薄膜內部之結晶域時,則在非晶基質與結晶域之界 面會發生反射。若在薄膜內部存在有許多結晶域時,則可降低透射過薄膜的光之比例,可更提高由結晶域所反射的光之比例。藉此,雖然並不否定外加反射層之功效,但是即使在並未外加金屬薄膜等反射層的情況下,薄膜整體是可達成高反射率。In the light reflective film of the present invention, when the light incident on the film collides with the crystal domain inside the film, the boundary between the amorphous matrix and the crystalline domain Reflections will occur on the surface. If there are many crystal domains inside the film, the proportion of light transmitted through the film can be reduced, and the proportion of light reflected by the crystal domain can be further increased. Thereby, although the effect of the external reflection layer is not negated, even in the case where a reflection layer such as a metal thin film is not applied, the film as a whole can achieve high reflectance.

特別是在本發明之光反射性薄膜,由於藉由控制結晶域結構而對薄膜賦予反射性,即使不使用先前為提高光反射性而添加在薄膜的光反射性填料或光散射性填料,也可對薄膜賦予高光反射性。In particular, in the light-reflective film of the present invention, by imparting reflectivity to the film by controlling the crystal domain structure, the light-reflective filler or the light-scattering filler added to the film in order to improve light reflectivity is not used. The film can be imparted with high light reflectivity.

結晶域之形狀,只要其可在結晶域與非晶基質之界面進行光反射時,則並無特殊限制,可列舉球形、圓柱形、紡錘形、多角錐系、矩形、不定形等各種形狀,但是從提高在結晶域與非晶基質界面之反射率的觀點,則域之形狀較佳為扁平狀。The shape of the crystal domain is not particularly limited as long as it can reflect light at the interface between the crystal domain and the amorphous matrix, and various shapes such as a spherical shape, a cylindrical shape, a spindle shape, a polygonal pyramid system, a rectangular shape, and an amorphous shape are exemplified, but From the viewpoint of increasing the reflectance at the interface between the crystal domain and the amorphous matrix, the shape of the domain is preferably flat.

例如在薄膜之厚度方向截面中,結晶域較佳為域之長軸與短軸之縱橫比(aspect ratio)(長軸/短軸)可為例如5以上,較佳為10以上,更佳為15以上。再者,其上限是並無特殊限制,例如縱橫比也可為40以下。再者,結晶域是可依照在後述實施例所揭述之方法而計算得。For example, in the thickness direction cross section of the film, the crystal region preferably has an aspect ratio (long axis/minor axis) of the major axis and the minor axis of the domain, for example, 5 or more, preferably 10 or more, more preferably 15 or more. Further, the upper limit is not particularly limited, and for example, the aspect ratio may be 40 or less. Further, the crystal domain can be calculated in accordance with the method disclosed in the examples described later.

此外,若結晶域為扁平狀時,則各結晶域之長軸較佳為與薄膜平面大致平行。再者,所謂的「大致平行」是意謂薄膜平面與長軸之交叉角為例如在±30°以內。Further, when the crystal domain is flat, the major axis of each crystal domain is preferably substantially parallel to the plane of the film. Further, the term "substantially parallel" means that the intersection angle of the film plane and the long axis is, for example, within ±30°.

若為本發明之光反射性薄膜,則例如對470nm波長之光反射率是可為60%以上,較佳為65%以上,更佳 為70%以上。再者,在此所謂的「光反射率」是以後述實施例所揭述之方法所測定之值。In the light reflective film of the present invention, for example, the light reflectance at a wavelength of 470 nm may be 60% or more, preferably 65% or more, more preferably It is 70% or more. Here, the "light reflectance" as used herein is a value measured by the method described in the examples below.

此外,若為本發明之光反射性薄膜,則源於液晶聚合物之性質而對高溫的耐熱性高,其熔點(亦即,液晶聚合物薄膜之熔點)可為250℃以上(例如約250至350℃),較佳為260℃以上(例如約260至340℃),更佳為270℃以上(例如約270至330℃)。再者,熔點之上限通常多半為約360℃。Further, in the case of the light-reflective film of the present invention, the heat resistance to high temperature is high due to the properties of the liquid crystal polymer, and the melting point (that is, the melting point of the liquid crystal polymer film) may be 250 ° C or higher (for example, about 250). Up to 350 ° C), preferably 260 ° C or higher (for example, about 260 to 340 ° C), more preferably 270 ° C or higher (for example, about 270 to 330 ° C). Further, the upper limit of the melting point is usually about 360 ° C.

此外,從對薄膜或基板賦予散熱性的觀點,則本發明之光反射性薄膜是薄膜之平面方向之熱傳導率為0.8W/mK以上(例如約1至30W/mK),較佳為1W/mK以上。再者,熱傳導率是以後述實施例所揭述之方法所測定之值。Further, from the viewpoint of imparting heat dissipation to a film or a substrate, the light-reflective film of the present invention has a thermal conductivity in a planar direction of the film of 0.8 W/mK or more (for example, about 1 to 30 W/mK), preferably 1 W/. More than mK. Further, the thermal conductivity is a value measured by the method described in the examples below.

(電路材料)(circuit material)

本發明之電路材料係以光反射性薄膜所構成。此外,電路材料也可以光反射性薄膜、與在該光反射性薄膜之至少一面所形成的接著劑層所構成。在此情況下,光反射性薄膜則可以各種模式而用作為電路材料,例如可利用光反射性薄膜作為在電路基板中的介電質層、對電路基板的表護膜(cover film)。此外,接著劑層是可利用後述在光反射性積層體之項目中之各種接著劑而形成。The circuit material of the present invention is composed of a light reflective film. Further, the circuit material may be composed of a light reflective film and an adhesive layer formed on at least one surface of the light reflective film. In this case, the light-reflective film can be used as a circuit material in various modes. For example, a light-reflective film can be used as a dielectric layer on a circuit board or a cover film for a circuit board. Further, the adhesive layer can be formed by using various adhesives in the item of the light-reflective laminate described later.

(光反射性積層體)(light reflective laminate)

本發明之光反射性積層體係至少以前述光反射性薄膜、與在該光反射性薄膜之至少一面經由接著劑層而接合的導電體層或電路基板層所構成。The light-reflective laminated system of the present invention comprises at least the light-reflective film and a conductor layer or a circuit board layer joined to each other via at least one surface of the light-reflective film via an adhesive layer.

本發明之光反射性積層體,其特徵為作為其構成要素的熱塑性液晶聚合物薄膜係光反射性薄膜。亦即,在光反射性積層體中,光反射性薄膜是在熱塑性液晶聚合物薄膜之非晶基質中,結晶域係在薄膜之厚度方向每10μm存在8至40個。因此,光反射性積層體之光反射性薄膜也可具有上述各種物性之一種或其以上。The light-reflective laminate of the present invention is characterized in that it is a thermoplastic liquid crystal polymer film as a constituent element of the light-reflective film. That is, in the light-reflective laminate, the light-reflective film is in an amorphous matrix of the thermoplastic liquid crystal polymer film, and the crystal domains are present in an amount of 8 to 40 per 10 μm in the thickness direction of the film. Therefore, the light-reflective film of the light-reflective laminate may have one or more of the above various physical properties.

此等光反射性積層體係藉由對前述光反射性薄膜之至少一面經由接著劑層而接合導電體層或電路基板層而製造。These light-reflective laminated systems are produced by bonding a conductor layer or a circuit board layer to at least one surface of the light-reflective film via an adhesive layer.

導電體層較佳為使用可形成電路之金屬,例如可列舉:金、銀、銅、鎳、鋁或此等之合金金屬等之金屬箔。在此等金屬之中,較佳為使用銅。金屬箔之厚度也可為例如約5至50μm,較佳為8至40μm。The conductor layer is preferably made of a metal capable of forming a circuit, and examples thereof include metal foils of gold, silver, copper, nickel, aluminum or alloy metals thereof. Among these metals, copper is preferably used. The thickness of the metal foil may also be, for example, about 5 to 50 μm, preferably 8 to 40 μm.

電路基板層是只要其為由在至少一面形成有電路的介電質或絕緣體所形成即可,該介電質或絕緣體是可列舉:陶瓷、環氧樹脂、聚醯亞胺、液晶聚合物等之薄膜或薄片狀物。The circuit board layer may be formed of a dielectric or an insulator having a circuit formed on at least one surface, and examples of the dielectric or insulator include ceramics, epoxy resins, polyimides, liquid crystal polymers, and the like. a film or sheet.

在接合步驟,只要是能保持光反射性薄膜之光反射性,則可實施各種接合方法,通常是使用接著劑將光反射性薄膜與導電體層或電路基板層加以壓著。In the bonding step, various bonding methods can be carried out as long as the light reflectivity of the light-reflective film can be maintained, and the light-reflective film and the conductor layer or the circuit board layer are usually pressed by an adhesive.

例如可將接著劑以凹版塗布、刀式塗布、輥式塗布、刷塗、噴霧塗布等方法塗布在光反射性薄膜之被塗布面後,將導電體層或電路基板層與前述塗布面接觸,以壓機加壓光反射性薄膜與導電體層或電路基板層之兩者而積層成一體化。For example, the adhesive may be applied to the coated surface of the light-reflective film by gravure coating, knife coating, roll coating, brush coating, spray coating, or the like, and then the conductor layer or the circuit board layer may be in contact with the coated surface. The press pressurization light reflective film is integrated with both the conductor layer or the circuit board layer.

此外,若將薄膜狀熱熔接著劑使用於光反射性薄膜時,則可在經使薄膜狀熱熔接著劑介於導電體層或電路基板層與光反射性薄膜間的狀態下,以壓機加壓光反射性薄膜與導電體層或電路基板層之兩者而積層成一體化。Further, when a film-like hot-melt adhesive is used for the light-reflective film, the film-like hot-melt adhesive can be interposed between the conductor layer or the circuit board layer and the light-reflective film, and the press machine can be used. The pressurized light reflective film is integrated with both the conductor layer and the circuit board layer.

進行壓著時,從維持光反射性薄膜之光反射性的觀點,如加熱至光反射性薄膜之熔點以上時,則有不佳的傾向。壓著最佳為在非加熱下進行,即使採取熱壓著,其加熱溫度也必須為低於光反射性薄膜之熔點,假設光反射性薄膜之熔點為Mp時,則較佳為Mp-10℃以下,更佳為Mp-20℃以下。When the pressure is applied, from the viewpoint of maintaining the light reflectivity of the light-reflective film, if it is heated to a temperature higher than the melting point of the light-reflective film, it tends to be inferior. The pressing is preferably carried out under non-heating, and the heating temperature must be lower than the melting point of the light-reflective film even if it is subjected to hot pressing. If the melting point of the light-reflecting film is Mp, it is preferably Mp-10. Below °C, more preferably below Mp-20 °C.

接著劑是可使用丙烯酸酯系、酚系、環氧系之熱硬化性接著劑等,或可使用以熱塑性樹脂薄膜(例如熱塑性聚酯薄膜、熱塑性液晶聚合物薄膜等)所製成之薄膜狀熱熔接著劑。As the adhesive, an acrylate-based, phenol-based or epoxy-based thermosetting adhesive can be used, or a film made of a thermoplastic resin film (for example, a thermoplastic polyester film or a thermoplastic liquid crystal polymer film) can be used. Hot melt adhesive.

再者,薄膜狀熱熔接著劑之熔點是可因應前述加熱溫度而選擇,例如假設光反射性薄膜之熔點為Mp時,則為Mp-20℃以下者,較佳為Mp-30℃以下者。Further, the melting point of the film-like hot-melt adhesive can be selected in accordance with the heating temperature. For example, when the melting point of the light-reflective film is Mp, it is preferably Mp-20 ° C or lower, preferably Mp -30 ° C or lower. .

光反射性積層體,只要其為至少具備以一層之導電體層或電路基板層與一層之光反射性薄膜所構成的單元即可,因應需要光反射性積層體也可製成為經交替積層至少一層之光反射性薄膜與至少一層之導電體層或電路基板層之多層積層板。The light-reflective laminate may be a unit including at least one conductor layer or a circuit board layer and one layer of a light-reflective film, and the light-reflective laminate may be formed by alternately stacking at least one layer. A multi-layer laminate of a light reflective film and at least one conductor layer or circuit substrate layer.

本發明之光反射性積層體也可為例如對470nm波長之光反射率為60%以上,較佳為65%以上,更佳為 70%以上。再者,在此所謂的「光反射率」是以後述實施例所揭述之方法所測定之值。The light-reflective laminate of the present invention may have a light reflectance of, for example, a wavelength of 470 nm of 60% or more, preferably 65% or more, more preferably More than 70%. Here, the "light reflectance" as used herein is a value measured by the method described in the examples below.

此外,本發明之光反射性積層體是散熱性也為優異,也可為平面方向之熱傳導率為1W/mK以上(例如約1至30W/mK),較佳為1.1W/mK以上,更佳為1.2W/mK以上。再者,熱傳導率是以後述實施例所揭述之方法所測定之值。Further, the light-reflective laminate of the present invention is excellent in heat dissipation, and may have a thermal conductivity in the planar direction of 1 W/mK or more (for example, about 1 to 30 W/mK), preferably 1.1 W/mK or more. Good is 1.2W/mK or more. Further, the thermal conductivity is a value measured by the method described in the examples below.

例如本發明之光反射性積層體也可以具有如下列第1至5圖所示之結構作為各種實施模式。第1圖是展示光反射性積層體10,其具備光反射性薄膜11、與在光反射性薄膜11之一面經由接著劑層12而接合的導電體層13。在第1圖之實施模式中,光反射性薄膜11是用作為對於導電體層13的介電質層。For example, the light-reflective laminate of the present invention may have a structure as shown in the following first to fifth embodiments as various embodiments. FIG. 1 is a view showing a light-reflective laminated body 10 including a light-reflective film 11 and a conductor layer 13 bonded to one surface of the light-reflective film 11 via an adhesive layer 12. In the embodiment mode of Fig. 1, the light reflective film 11 is used as a dielectric layer for the conductor layer 13.

第2圖是展示光反射性積層體20,其具備光反射性薄膜21、與在光反射性薄膜21之一面經由接著劑層22而接合的電路基板層24。在第1圖之實施模式中,光反射性薄膜21是用作為對於電路基板層24的表護膜。2 is a view showing a light-reflective laminated body 20 including a light-reflective film 21 and a circuit board layer 24 joined to one surface of the light-reflective film 21 via an adhesive layer 22. In the embodiment mode of Fig. 1, the light reflective film 21 is used as a surface film for the circuit board layer 24.

第3圖是展示光反射性積層體30,其具備:光反射性薄膜31、與在光反射性薄膜31之一面經由第一接著劑層32而接合的第一導電體層33,及在光反射性薄膜31之另一面經由第二接著劑層35而接合的第二導電體層36。在第3圖之實施模式中,光反射性薄膜31是用作為對於導電體層33、36的介電質層。3 is a view showing a light-reflective laminated body 30 including a light-reflective film 31, a first conductor layer 33 joined to one surface of the light-reflective film 31 via the first adhesive layer 32, and light reflection. The second conductor layer 36 joined to the other side of the thin film 31 via the second adhesive layer 35. In the embodiment mode of Fig. 3, the light reflective film 31 is used as a dielectric layer for the conductor layers 33, 36.

第4圖是展示光反射性積層體40,其具備:光反射性薄膜41、與在光反射性薄膜41之一面經由第一接著劑層42而接合的導電體層43,及在光反射性薄膜41之另一面經由第二接著劑層45而接合的電路基板層44。在第4圖之實施模式中,光反射性薄膜41是用作為對於導電體層43的介電質層。4 is a view showing a light-reflective laminated body 40 including a light-reflective film 41, a conductor layer 43 bonded to one surface of the light-reflective film 41 via the first adhesive layer 42, and a light-reflective film. The other side of the 41 is bonded to the circuit board layer 44 via the second adhesive layer 45. In the embodiment mode of Fig. 4, the light reflective film 41 is used as a dielectric layer for the conductor layer 43.

第5圖是展示光反射性積層體50,其具備:第一光反射性薄膜51、在光反射性薄膜51之一面經由第一接著劑層52而接合的導電體層53,及在光反射性薄膜51之另一面經由第二接著劑層55而接合的電路基板層54、在電路基板層54之與光反射性薄膜51相對之面經由第三接著劑層57而接合的第二光反射性薄膜58。在第5圖所示之實施模式中,第一光反射性薄膜51是用作為對於導電體層53的介電質層,而第二光反射性薄膜58是用作為對於電路基板層54的表護膜。Fig. 5 is a view showing a light-reflective laminated body 50 including a first light-reflective film 51, a conductor layer 53 bonded to one surface of the light-reflective film 51 via a first adhesive layer 52, and light reflectivity. The circuit board layer 54 joined to the other surface of the film 51 via the second adhesive layer 55, and the second light reflectance bonded to the surface of the circuit board layer 54 facing the light reflective film 51 via the third adhesive layer 57 Film 58. In the embodiment shown in FIG. 5, the first light reflective film 51 is used as a dielectric layer for the conductor layer 53, and the second light reflective film 58 is used as a shield for the circuit substrate layer 54. membrane.

除此以外,在全部前述實施模式之中,只要是具有將包含光反射性薄膜、與導電體層或電路基板層的本發明之結構作為最小單元,則因應需要也可包含其他層,因此,本發明之範圍則包括各種變形例。再者,接著劑層是可為未硬化、或局部性硬化。此外,電路基板層是也可為未硬化、局部性硬化、或完全硬化。In addition, in all of the above-described embodiments, as long as the structure of the present invention including the light-reflective film, the conductor layer, or the circuit board layer is the smallest unit, other layers may be included as needed. The scope of the invention includes various modifications. Further, the adhesive layer may be unhardened or partially cured. Further, the circuit substrate layer may be uncured, locally hardened, or completely cured.

(光反射性電路基板)(light reflective circuit board)

本發明之光反射性電路基板(在下文中,有時候則稱為「光反射性基板」)是電路層可為單層、或兩層以上之多層。The light-reflective circuit substrate of the present invention (hereinafter sometimes referred to as "light-reflective substrate") may be a single layer or a plurality of layers of two or more layers.

光反射性基板係由上述之光反射性薄膜形成光反射性積層體,以習知或慣用之方法對該光反射性積層體施加電路加工而形成。再者,電路加工是使用製造一般的配線板所使用之方法即可。The light-reflective substrate is formed by forming a light-reflective laminated body from the above-described light-reflective film, and applying a circuit process to the light-reflective laminated body by a conventional or conventional method. Furthermore, the circuit processing is a method used to manufacture a general wiring board.

光反射性基板,只要其可使用作為基板時,則可為任意之厚度,雖然也包括5毫米以下之板狀或薄片狀者,但是例如可撓性基板較佳為在10至500μm之範圍內,更佳為在15至200μm之範圍內。The light-reflective substrate may have any thickness as long as it can be used as a substrate, and includes a plate shape or a sheet shape of 5 mm or less. For example, the flexible substrate preferably has a thickness of 10 to 500 μm. More preferably, it is in the range of 15 to 200 μm.

此外,基板是也可由光反射性薄膜單層所形成,或製成將厚度為10至200μm之範圍的薄膜積層數片(例如約3至20片,較佳為約5至15片)之積層基板。Further, the substrate may be formed of a single layer of a light-reflective film, or a laminate of a plurality of sheets of a film having a thickness of 10 to 200 μm (for example, about 3 to 20 sheets, preferably about 5 to 15 sheets). Substrate.

本發明之光反射性基板是具有源於光反射性積層體之各種物性(光反射性、放射性)。因此,例如可利用光反射性而使用於各種電子設備之電路基板,尤其是可用作為用於安裝各種LED(特別是白色LED)、雷射二極體等發光元件之電路基板。The light-reflective substrate of the present invention has various physical properties (light reflectivity, radioactivity) derived from the light-reflective laminate. Therefore, for example, a circuit board which can be used for various electronic devices by utilizing light reflectivity can be used, and particularly, it can be used as a circuit board for mounting light-emitting elements such as various LEDs (particularly white LEDs) and laser diodes.

《實施例》"Embodiment"

在下文中,以實施例更詳細說明本發明,但是本發明並不受限於此等實施例者。再者,在下文中之實施例及比較例是以下列方法測定各種物性。Hereinafter, the present invention will be described in more detail by way of examples, but the invention is not limited by the examples. Further, the examples and comparative examples below were measured for various physical properties by the following methods.

〔熔點〕[melting point]

使用示差掃描熱量測定計(Metler公司製之TA3000)觀察薄膜之熱行為所獲得。亦即,以20℃/分鐘之速度升溫將試驗薄膜完全熔融後,將熔融物以50℃/分鐘之速度驟冷至50℃、再以20℃/分鐘之速度升溫時所顯現的吸熱波峰之位置記錄作為薄膜之熔點。Obtained by observing the thermal behavior of the film using a differential scanning calorimeter (TA3000 manufactured by Mettler Co., Ltd.). That is, after the test film is completely melted at a temperature of 20 ° C /min, the endothermic peak which appears when the melt is rapidly cooled to 50 ° C at a rate of 50 ° C / min and then raised at a rate of 20 ° C / min. The position is recorded as the melting point of the film.

〔模具剪切速率〕[mold shear rate]

在吹塑薄膜製膜時,所熔融之熱塑性液晶聚合物在模具區域受到的模具剪切速率定義為如下式。式中,Q是代表樹脂吐出量(mm3 /秒鐘)、R是代表模具直徑(mm)、d是代表模具狹縫間隔(mm)。The film shear rate experienced by the molten thermoplastic liquid crystal polymer in the mold region at the time of film formation of the blown film is defined as follows. In the formula, Q represents the resin discharge amount (mm 3 /second), R represents the mold diameter (mm), and d represents the mold slit interval (mm).

模具剪切速率(秒-1 )=(6×Q)/(π×R×d2 )Mold shear rate (sec -1 ) = (6 × Q) / (π × R × d 2 )

〔結晶域之個數及縱橫比〕[Number and aspect ratio of crystal domains]

將薄膜在室溫下浸漬於乙胺中4小時後,以電子顯微鏡觀察薄膜之厚度方向切斷面。在10000倍下所攝影的照片上,朝厚度方向無規地畫出三條直線,測定與各直線相交的結晶域之數目,將薄膜之厚度每10μm之平均值作為結晶域之個數。The film was immersed in ethylamine at room temperature for 4 hours, and the cut surface was observed in the thickness direction of the film by an electron microscope. On the photograph taken at 10,000 times, three straight lines were randomly drawn in the thickness direction, and the number of crystal domains intersecting each straight line was measured, and the average value of the thickness of the film per 10 μm was taken as the number of crystal domains.

此外,就與直線相交的結晶域測定其縱橫比(長軸/短軸),將其平均值作為薄膜的結晶域之縱橫比。Further, the aspect ratio (long axis/minor axis) of the crystal domain intersecting the straight line was measured, and the average value thereof was defined as the aspect ratio of the crystal domain of the film.

〔光反射率〕[light reflectivity]

使用分光光度計(日本分光(股)製之「V-570」),測定薄膜或光反射性積層體在470nm波長區域之全反射率(鏡面反射率+擴散反射率)。The total reflectance (specular reflectance + diffuse reflectance) of the film or the light-reflective laminate in the wavelength region of 470 nm was measured using a spectrophotometer ("V-570" manufactured by JASCO Corporation).

〔熱傳導率〕〔Thermal conductivity〕

使用雷射閃光法熱常數測定裝置(理學(股)製之「LF/TCMFA8510B」),在測定溫度為20℃下進行測定。再者,平面方向之測定是以專用的附件而實施。The measurement was carried out at a measurement temperature of 20 ° C using a laser flash thermal constant measuring device ("LF/TCMFA8510B" manufactured by Rigaku Corporation). Furthermore, the measurement of the planar direction is carried out with a dedicated attachment.

〔薄膜之厚度〕[thickness of film]

厚度是使用數位式厚度計(Mitutoyo股份有限公司製),將薄膜(大小:TD方向50公分×MD方向3公 分)朝TD方向以1公分間隔測定,將由中心部及端部任意挑選的10處之平均值作為膜厚。The thickness is a digital thickness meter (Mitutoyo Co., Ltd.), and the film (size: TD direction 50 cm × MD direction 3 metric) The measurement was performed at intervals of 1 cm in the TD direction, and the average value of 10 points arbitrarily selected from the center portion and the end portion was taken as the film thickness.

〔實施例1〕[Example 1]

將對羥基苯甲酸與6-羥基-2-萘甲酸之共聚物(莫耳比:73/27)、且熔點為280℃之熱塑性液晶聚合物以單螺桿擠壓機加熱捏合,由模具直徑為33.5毫米、模具狹縫間隔為500μm之環狀吹塑薄膜模具,以1000秒-1 之模具剪切速率加以熔融擠出,並在縱向之延伸比(Dr)為2.9、橫向之延伸比(Bl)為6.2的條件下而獲得熔點為280℃、膜厚為25μm之薄膜。將所獲得薄膜之截面照片展示於第6圖,同時將其性質展示於表1。A thermoplastic liquid crystal polymer having a copolymer of p-hydroxybenzoic acid and 6-hydroxy-2-naphthoic acid (mole ratio: 73/27) and a melting point of 280 ° C is heated and kneaded by a single screw extruder, and the diameter of the mold is An annular blown film mold of 33.5 mm and a die slit interval of 500 μm was melt-extruded at a die shear rate of 1000 sec -1 , and the elongation ratio (Dr) in the longitudinal direction was 2.9, and the lateral extension ratio (Bl) A film having a melting point of 280 ° C and a film thickness of 25 μm was obtained under the conditions of 6.2. A cross-sectional photograph of the obtained film is shown in Fig. 6, and its properties are shown in Table 1.

此外,使用該薄膜以下列程序形成光反射性積層體。銅箔是使用JX日礦日石金屬(股)製之「JTC-18AM〕(厚度18μm),接著劑是使用Nikkan工業(股)製之「NIKAFLEX(註冊商標)SAFW」(厚度20μm),與前述光反射性薄膜在溫度為160℃、壓力為2MPa的條件下,歷時60分鐘加以積層而製造光反射性積層體(覆銅積層板)。物性評估試樣是使用經氯化鐵溶液移除銅箔之薄膜。Further, a light reflective laminate was formed using the film in the following procedure. "JTC-18AM" (thickness: 18 μm) made of JX Nippon Mining & Metal Co., Ltd., and Nikaan Industrial Co., Ltd. "NIKAFLEX (registered trademark) SAFW" (thickness: 20 μm), and The light-reflective film was laminated under the conditions of a temperature of 160 ° C and a pressure of 2 MPa over 60 minutes to produce a light-reflective laminate (copper-clad laminate). The physical property evaluation sample was a film in which a copper foil was removed using a ferric chloride solution.

〔實施例2〕[Example 2]

將對羥基苯甲酸與6-羥基-2-萘甲酸之共聚物(莫耳比:80/20)、且熔點為325℃之熱塑性液晶聚合物以單螺桿擠壓機加熱捏合,由模具直徑為33.5毫米、模具狹縫間隔為950μm之環狀吹塑薄膜模具,以500秒- 1 之模具剪切速率加以熔融擠出,並以縱向之延伸比(Dr)為2.9、橫向之延伸比(Bl)為6.2的條件下而獲得熔點為325℃、膜厚為50μm之薄膜。將所獲得薄膜之截面照片展示於第7圖,同時將其性質展示於表1。A thermoplastic liquid crystal polymer having a copolymer of p-hydroxybenzoic acid and 6-hydroxy-2-naphthoic acid (mole ratio: 80/20) and a melting point of 325 ° C is heated and kneaded by a single screw extruder, and the diameter of the mold is A 33.5 mm annular blown film mold with a die slit spacing of 950 μm was melt extruded at a die shear rate of 500 sec - 1 with a longitudinal extension ratio (Dr) of 2.9 and a lateral extension ratio (Bl). A film having a melting point of 325 ° C and a film thickness of 50 μm was obtained under the conditions of 6.2. A photograph of the cross section of the obtained film is shown in Fig. 7, and its properties are shown in Table 1.

此外,使用該薄膜且以與實施例1相同的方法製造光反射性積層體。Further, using this film, a light-reflective laminate was produced in the same manner as in Example 1.

〔實施例3〕[Example 3]

將玻纖環氧樹脂基板FR-4(Panasonic電工(股)製之「R-1766」(厚度:1.6毫米)加工成特定的電路,接著劑是使用Nikkan工業(股)製之「NIKAFLEX(註冊商標)SAFW」(厚度20μm),與以實施例1所製得之光反射性薄膜在溫度為160℃、壓力為2MPa的條件下歷時60分鐘加以積層而製造光反射性積層體(表護膜積層電路基板)。The glass fiber epoxy resin substrate FR-4 ("R-1766" (thickness: 1.6 mm) manufactured by Panasonic Electric Co., Ltd.) was processed into a specific circuit, and the adhesive was made using NIKAFLEX (registered by Nikkan Industrial Co., Ltd.). The trademark "SAFW" (thickness: 20 μm) was laminated on the light-reflective film obtained in Example 1 under the conditions of a temperature of 160 ° C and a pressure of 2 MPa for 60 minutes to produce a light-reflective laminate (surface film). Laminated circuit board).

〔比較例1〕[Comparative Example 1]

將約1克之與實施例1相同的聚合物材料在SUS板上舖滿,以平板壓機在300℃、4MPa之壓力下加壓歷時10分鐘而獲得膜厚為50μm之薄膜。將所獲得薄膜之截面照片展示於第8圖,同時將其性質展示於表1。此外,使用該薄膜,以與實施例1相同的方法製造光反射性積層體。About 1 g of the same polymer material as in Example 1 was spread on a SUS plate, and the film was pressed at 300 ° C under a pressure of 4 MPa for 10 minutes to obtain a film having a film thickness of 50 μm. A photograph of the cross section of the obtained film is shown in Fig. 8, and its properties are shown in Table 1. Further, using this film, a light-reflective laminate was produced in the same manner as in Example 1.

〔比較例2〕[Comparative Example 2]

將Polyplastics公司製之「Vectra C950」在單螺桿擠出機(螺桿直徑為60毫米)內加以熔融,由該擠出機前端之T模具(模唇長度為300毫米、模唇間隙為 1.0毫米、模具溫度為350℃)擠出成薄膜狀,並加以冷卻而獲得厚度為250μm之液晶聚合物薄膜。在該液晶聚合物薄膜之兩面,將厚度為40μm之多孔質聚四氟乙烯薄膜以溫度為330℃之一對熱輥加以熱壓著(輥周速為2公尺/分鐘)。The "Vectra C950" manufactured by Polyplastics Co., Ltd. was melted in a single-screw extruder (screw diameter of 60 mm) from the T-die at the front end of the extruder (the length of the lip was 300 mm, and the lip gap was 1.0 mm and a mold temperature of 350 ° C) were extruded into a film form and cooled to obtain a liquid crystal polymer film having a thickness of 250 μm. On both sides of the liquid crystal polymer film, a porous polytetrafluoroethylene film having a thickness of 40 μm was heat-pressed at a temperature of 330 ° C (rolling speed of 2 m/min).

其次,將經如上述所獲得之光反射性積層體以雙軸向延伸機加以延伸。此時之延伸條件是延伸溫度為350℃、延伸倍率是MD方向為1.6倍、TD方向為3.2倍、延伸速度是20%/秒鐘。最後將多孔質聚四氟乙烯薄膜從液晶聚合物薄膜之兩面剝離而獲得厚度為50μm之液晶聚合物薄膜。將所獲得薄膜之截面照片展示於第9圖,同時將其性質展示於表1。此外,使用該薄膜,以與實施例1相同的方法製造光反射性積層體。Next, the light-reflective laminated body obtained as described above was extended by a biaxial stretching machine. The extension condition at this time was that the stretching temperature was 350 ° C, the stretching ratio was 1.6 times in the MD direction, the TD direction was 3.2 times, and the stretching speed was 20%/second. Finally, the porous polytetrafluoroethylene film was peeled off from both sides of the liquid crystal polymer film to obtain a liquid crystal polymer film having a thickness of 50 μm. A cross-sectional photograph of the obtained film is shown in Fig. 9, and its properties are shown in Table 1. Further, using this film, a light-reflective laminate was produced in the same manner as in Example 1.

如第6及7圖以及表7所示,實施例1及2之光反射性薄膜在薄膜之厚度截面,域係與薄膜平面大致平行重疊成層狀而存在10層以上,由於該域之存在,則可提高薄膜之光反射率。As shown in FIGS. 6 and 7 and Table 7, the light-reflective films of Examples 1 and 2 have a thickness cross section of the film, and the domains are substantially parallel to the film plane in a layered manner, and there are 10 or more layers due to the existence of the domain. , can improve the light reflectivity of the film.

所獲得之薄膜,由於即使不使用光散射性填料也可顯現高光反射率,可抑制源於填料而發生的龜裂。此外,所獲得之薄膜是熱傳導率也高,且散熱性優異。The obtained film can exhibit high light reflectance even without using a light-scattering filler, and can suppress cracking due to the filler. Further, the obtained film has high thermal conductivity and excellent heat dissipation.

此外,若為以實施例1至3所獲得之光反射性積層體,則薄膜之厚度方向的域之數目是與導電體層或電路基板層之接合步驟前並無變化。因此,在將光反射性薄膜用作為基板的光反射性基板,則可對電路基板賦予源於光反射性薄膜之高光反射性與散熱性。Further, in the case of the light-reflective laminates obtained in Examples 1 to 3, the number of domains in the thickness direction of the film does not change before the bonding step of the conductor layer or the circuit board layer. Therefore, when the light-reflective substrate is used as the light-reflective substrate of the substrate, the high-reflectivity and heat dissipation property of the light-reflective film can be imparted to the circuit substrate.

在另一方面,比較例1及2之熱塑性液晶聚合物薄膜,由於存在於薄膜之厚度方向的域之數目少,使得透射光之比例變多,以致無法顯現優異的光反射性。此外,關於熱傳導率方面也為低於實施例之值,且在散熱性方面也比實施例差。因此,若為經使用該薄膜所獲得之光反射性積層體及電路基板,則無法對電路基板賦予源於薄膜之光反射性。On the other hand, in the thermoplastic liquid crystal polymer films of Comparative Examples 1 and 2, since the number of domains existing in the thickness direction of the film was small, the ratio of transmitted light was increased, so that excellent light reflectivity could not be exhibited. Further, the thermal conductivity is also lower than the value of the embodiment, and is also inferior to the embodiment in terms of heat dissipation. Therefore, in the case of the light-reflective laminate and the circuit board obtained by using the film, light reflection from the film cannot be imparted to the circuit board.

〔產業上之利用可能性〕[Industrial use possibility]

本發明之光反射性薄膜、光反射性積層體、及電路材料是可用作為電氣.電子製品之基板材料,特別是由於光反射性優異,可有效地用作為用於安裝各種發光元件(白色LED等之LED等)之光反射性基板。The light reflective film, the light reflective laminate, and the circuit material of the present invention are usable as electrical. The substrate material of the electronic product is particularly excellent in light reflectivity, and can be effectively used as a light-reflective substrate for mounting various light-emitting elements (such as LEDs such as white LEDs).

如上所述,已一邊參閱圖式一邊說明本發明之較佳的實施例,只要為熟習此項技藝者,根據本說明書將可在本身了解之範圍內容易地作變更及修正。但是,此等變更及修正均應屬於由本案申請專利範圍所規定的發明之範圍內者。As described above, the preferred embodiments of the present invention have been described with reference to the drawings, and those skilled in the art can be easily modified and modified within the scope of the present disclosure. However, such changes and amendments shall fall within the scope of the invention as defined by the scope of the patent application in this case.

10‧‧‧光反射性積層體10‧‧‧Light reflective laminate

11‧‧‧光反射性薄膜11‧‧‧Light reflective film

12‧‧‧接著劑層12‧‧‧ adhesive layer

13‧‧‧導電體層13‧‧‧Electrical layer

20‧‧‧光反射性積層體20‧‧‧Light reflective laminate

21‧‧‧光反射性薄膜21‧‧‧Light reflective film

22‧‧‧接著劑層22‧‧‧ adhesive layer

24‧‧‧電路基板層24‧‧‧Circuit board layer

30‧‧‧光反射性積層體30‧‧‧Light reflective laminate

31‧‧‧光反射性薄膜31‧‧‧Light reflective film

32‧‧‧第一接著劑層32‧‧‧First adhesive layer

33‧‧‧第一導電體層33‧‧‧First conductor layer

35‧‧‧第二接著劑層35‧‧‧Secondary adhesive layer

36‧‧‧第二導電體層36‧‧‧Second conductor layer

40‧‧‧光反射性積層體40‧‧‧Light reflective laminate

41‧‧‧光反射性薄膜41‧‧‧Light reflective film

42‧‧‧第一接著劑層42‧‧‧First adhesive layer

43‧‧‧導電體層43‧‧‧Electrical layer

44‧‧‧電路基板層44‧‧‧Circuit board layer

45‧‧‧接著劑層45‧‧‧ adhesive layer

50‧‧‧光反射性積層體50‧‧‧Light reflective laminate

51‧‧‧光反射性薄膜51‧‧‧Light reflective film

52‧‧‧第一接著劑層52‧‧‧First adhesive layer

53‧‧‧導電體層53‧‧‧Electrical layer

54‧‧‧電路基板層54‧‧‧Circuit board layer

55‧‧‧第二接著劑層55‧‧‧Secondary adhesive layer

57‧‧‧第三接著劑層57‧‧‧ Third adhesive layer

58‧‧‧光反射性薄膜58‧‧‧Light reflective film

第1圖是展示用於說明本發明之光反射性積層體之一實施模式示意性截面圖。Fig. 1 is a schematic cross-sectional view showing an embodiment of a light-reflective laminate of the present invention.

第2圖是展示用於說明本發明之光反射性積層體之其他實施模式示意性截面圖。Fig. 2 is a schematic cross-sectional view showing another embodiment of the light-reflective laminate of the present invention.

第3圖是展示用於說明本發明之光反射性積層體之 其他實施模式示意性截面圖。Figure 3 is a view showing the light reflective laminate of the present invention. A schematic cross-sectional view of other embodiments.

第4圖是展示用於說明本發明之光反射性積層體之其他實施模式示意性截面圖。Fig. 4 is a schematic cross-sectional view showing another embodiment of the light-reflective laminated body for explaining the present invention.

第5圖是展示用於說明本發明之光反射性積層體之其他實施模式示意性截面圖。Fig. 5 is a schematic cross-sectional view showing another embodiment of the light-reflective laminate of the present invention.

第6圖是展示根據實施例1所製得光反射性薄膜之厚度方向截面之電子顯微鏡照片(10,000倍)。Fig. 6 is an electron micrograph (10,000 magnifications) showing a cross section in the thickness direction of the light-reflective film produced in accordance with Example 1.

第7圖是展示根據實施例2所製得光反射性薄膜之厚度方向截面之電子顯微鏡照片(10,000倍)。Fig. 7 is an electron micrograph (10,000 magnifications) showing a cross section in the thickness direction of the light-reflective film produced in Example 2.

第8圖是展示經比較例1所製得液晶聚合物薄膜之厚度方向截面之電子顯微鏡照片(10,000倍)。Fig. 8 is an electron micrograph (10,000 magnifications) showing a cross section in the thickness direction of the liquid crystal polymer film obtained in Comparative Example 1.

第9圖是展示經比較例2所製得液晶聚合物薄膜之厚度方向截面之電子顯微鏡照片(10,000倍)。Fig. 9 is an electron micrograph (10,000 magnifications) showing a cross section in the thickness direction of the liquid crystal polymer film obtained in Comparative Example 2.

10‧‧‧光反射性積層體10‧‧‧Light reflective laminate

11‧‧‧光反射性薄膜11‧‧‧Light reflective film

12‧‧‧接著劑層12‧‧‧ adhesive layer

13‧‧‧導電體層13‧‧‧Electrical layer

Claims (16)

一種光反射性積層體,其係至少以光反射性薄膜、與在該光反射性薄膜之至少一面經由接著劑層而接合的導電體層或電路基板層所構成,該光反射性薄膜係在非晶基質中存在結晶域之熱塑性液晶聚合物薄膜;以在薄膜斷面中朝厚度方向無規地畫出三條直線而與各直線相交的結晶域數目的平均值計,該結晶域係在薄膜之厚度方向每10μm存在8至40個,該熱塑性液晶聚合物薄膜係以熱塑性液晶聚酯或熱塑性液晶聚酯醯胺所構成。 A light-reflective laminate comprising at least a light-reflective film and a conductor layer or a circuit board layer bonded to at least one surface of the light-reflective film via an adhesive layer, wherein the light-reflective film is non-conductive a thermoplastic liquid crystal polymer film having a crystal domain in a crystal matrix; wherein the crystal field is in the film by an average of the number of crystal domains randomly intersecting the straight lines in the thickness direction of the film section There are 8 to 40 in the thickness direction per 10 μm, and the thermoplastic liquid crystal polymer film is composed of a thermoplastic liquid crystal polyester or a thermoplastic liquid crystal polyester decylamine. 如申請專利範圍第1項之光反射性積層體,其中光反射性薄膜之熔點為250℃至360℃。 The light-reflective laminate of the first aspect of the invention, wherein the light-reflective film has a melting point of from 250 ° C to 360 ° C. 如申請專利範圍第1項之光反射性積層體,其對470nm波長之光反射率為60%以上。 The light-reflective laminate of the first aspect of the patent application has a light reflectance of 60% or more for a wavelength of 470 nm. 如申請專利範圍第1至3項中任一項之光反射性積層體,其平面方向之熱傳導率為1W/m.K以上。 The light-reflective laminated body according to any one of claims 1 to 3, wherein the thermal conductivity in the plane direction is 1 W/m. K or more. 一種光反射性電路基板,其係將如申請專利範圍第1至4項中任一項之光反射性積層體加以電路加工而構成。 A light-reflective circuit board which is formed by circuit-processing a light-reflective laminated body according to any one of claims 1 to 4. 如申請專利範圍第5項之光反射性電路基板,其係為安裝發光元件而使用。 A light-reflective circuit substrate according to claim 5, which is used for mounting a light-emitting element. 一種光反射性積層體之製造方法,其係積層光反射性薄膜與導電體層或電路基板層而製造光反射性積層體之方法,且包括下列步驟: 對該光反射性薄膜之至少一面,使用接著劑將光反射性薄膜之接著劑使用面與導電體層或電路基板層加以壓著之接合步驟;該光反射性薄膜係由熱塑性液晶聚合物薄膜所構成,該熱塑性液晶聚合物薄膜係以熱塑性液晶聚酯或熱塑性液晶聚酯醯胺所構成,且在經與導電體層或電路基板層接合後之熱塑性液晶聚合物薄膜,則在非晶基質中存在結晶域,且以在薄膜斷面中朝厚度方向無規地畫出三條直線而與各直線相交的結晶域數目的平均值計,該結晶域係在薄膜之厚度方向每10μm存在8至40個。 A method for producing a light-reflective laminate, which comprises a method of producing a light-reflective laminate by layering a light-reflective film, a conductor layer or a circuit board layer, and comprising the steps of: a bonding step of bonding an adhesive-using surface of the light-reflective film to the conductor layer or the circuit board layer using at least one surface of the light-reflective film; the light-reflective film is made of a thermoplastic liquid crystal polymer film The thermoplastic liquid crystal polymer film is composed of a thermoplastic liquid crystal polyester or a thermoplastic liquid crystal polyester decylamine, and the thermoplastic liquid crystal polymer film after being bonded to the conductor layer or the circuit substrate layer exists in the amorphous matrix. a crystal domain, and an average of the number of crystal domains intersecting each of the straight lines in the thickness direction of the film in the thickness direction, and the crystal domains are 8 to 40 per 10 μm in the thickness direction of the film. . 如申請專利範圍第7項之製造方法,其在接合步驟中,將光反射性薄膜與導電體層或電路基板層在低於光反射性薄膜之熔點的溫度下加熱而壓著。 The manufacturing method of claim 7, wherein in the bonding step, the light reflective film and the conductor layer or the circuit substrate layer are heated and pressed at a temperature lower than a melting point of the light reflective film. 如申請專利範圍第7項之製造方法,其在接合步驟中,將光反射性薄膜與導電體層或電路基板層在非加熱下加以壓著。 The manufacturing method of claim 7, wherein in the bonding step, the light reflective film and the conductor layer or the circuit substrate layer are pressed without heating. 一種光反射性薄膜,其係用於經由接著劑層而與導電體層或電路基板層接合以形成光反射性積層體者,該光反射性薄膜係由熱塑性液晶聚合物薄膜所構成,且該熱塑性液晶聚合物薄膜係在非晶基質中存在結晶域者,且以在薄膜斷面中朝厚度方向無規地畫出三條直線而與各直線相交的結晶域數目的平均值 計,該結晶域係在薄膜之厚度方向每10μm存在8至40個,該熱塑性液晶聚合物薄膜係以熱塑性液晶聚酯或熱塑性液晶聚酯醯胺所構成。 A light-reflective film for bonding a conductor layer or a circuit board layer via an adhesive layer to form a light-reflective laminate, the light-reflective film being composed of a thermoplastic liquid crystal polymer film, and the thermoplastic The liquid crystal polymer film is an average of the number of crystal domains in which a crystal domain exists in an amorphous matrix, and three straight lines are randomly drawn in the thickness direction of the film to intersect each line. The crystal domain is present in an amount of from 8 to 40 per 10 μm in the thickness direction of the film, and the thermoplastic liquid crystal polymer film is composed of a thermoplastic liquid crystal polyester or a thermoplastic liquid crystal polyester decylamine. 如申請專利範圍第10項之光反射性薄膜,其中光反射性薄膜對470nm波長之光反射率為60%以上。 The light-reflective film of claim 10, wherein the light-reflective film has a light reflectance of 60% or more with respect to a wavelength of 470 nm. 如申請專利範圍第10項之光反射性薄膜,其中,結晶域為扁平狀;各結晶域的長軸與薄膜平面之交叉角為在±30°以內。 The light-reflective film of claim 10, wherein the crystal domain is flat; the angle of intersection between the major axis of each crystal domain and the plane of the film is within ±30°. 如申請專利範圍第10項之光反射性薄膜,其中,在薄膜之厚度方向截面中,結晶域的長軸與短軸之縱橫比(aspect ratio)(長軸/短軸)為5以上40以下。 The light-reflective film of claim 10, wherein the aspect ratio (long axis/minor axis) of the major axis and the minor axis of the crystal domain is 5 or more and 40 or less in the thickness direction cross section of the film. . 如申請專利範圍第11至13項中任一項之光反射性薄膜,其中光反射性薄膜之平面方向之熱傳導率為0.8W/m.K以上。 The light reflective film according to any one of claims 11 to 13, wherein the light reflective film has a thermal conductivity of 0.8 W/m in the plane direction. K or more. 一種電路材料,其係以光反射性薄膜所構成者,該光反射性薄膜係由熱塑性液晶聚合物薄膜所構成,且該熱塑性液晶聚合物薄膜係在非晶基質中存在結晶域者,且以在薄膜斷面中朝厚度方向無規地畫出三條直線而與各直線相交的結晶域數目的平均值計,該結晶域係在薄膜之厚度方向每10μm存在8至40個,該熱塑性液晶聚合物薄膜係以熱塑性液晶聚酯或熱塑性液晶聚酯醯胺所構成。 A circuit material which is composed of a light reflective film which is composed of a thermoplastic liquid crystal polymer film, and the thermoplastic liquid crystal polymer film is a crystalline domain in an amorphous matrix, and In the cross-section of the film, an average of the number of crystal domains intersecting each of the three straight lines and intersecting the respective straight lines in the thickness direction is 8 to 40 per 10 μm in the thickness direction of the film, and the thermoplastic liquid crystal is polymerized. The film is composed of a thermoplastic liquid crystal polyester or a thermoplastic liquid crystal polyester decylamine. 一種為將光反射性薄膜使用於光反射性積層體之方法,其包括:藉由在該光反射性薄膜之至少一面接合導電體層或電路基板層而形成光反射性積層體之步驟,該光反射性薄膜係由熱塑性液晶聚合物薄膜所構成,該熱塑性液晶聚合物薄膜係以熱塑性液晶聚酯或熱塑性液晶聚酯醯胺所構成,且在該光反射性積層體中,該熱塑性液晶聚合物薄膜係在非晶基質中存在結晶域,且以在薄膜斷面中朝厚度方向無規地畫出三條直線而與各直線相交的結晶域數目的平均值計,該結晶域係在薄膜之厚度方向每10μm存在8至40個。 A method for using a light-reflective film for a light-reflective laminate, comprising: forming a light-reflective laminate by bonding a conductor layer or a circuit board layer to at least one surface of the light-reflective film, the light The reflective film is composed of a thermoplastic liquid crystal polymer film composed of a thermoplastic liquid crystal polyester or a thermoplastic liquid crystal polyester decylamine, and in the light reflective laminate, the thermoplastic liquid crystal polymer The film has a crystal domain in the amorphous matrix, and is an average of the number of crystal domains intersecting each of the straight lines in the thickness direction of the film in the thickness direction, and the crystal field is in the thickness of the film. There are 8 to 40 directions per 10 μm.
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