TWI501297B - Semiconductor cymbal cleaning method and device - Google Patents

Description

Semiconductor cymbal cleaning method and device

The present invention relates to a method and apparatus for cleaning semiconductor wafers. More specifically, it relates to the uniform distribution of the ultrasonic or megasonic energy density on the surface of the cymbal by changing the relative distance between the ultrasonic or megasonic device and the surface of the cymbal while rotating the cymbal during the cleaning process. Thereby, the particles on the surface of the bract is effectively removed without damaging the surface element structure.

Semiconductor devices are formed on a semiconductor wafer through a series of different processing steps to form transistors and interconnects. In order for the transistor termination to be bonded to the cymbal, it is desirable to make conductive (e.g., metal) slots, holes, and other similar structures on the dielectric material of the cymbal as part of the device. Slots and holes can transfer electrical signals and energy between transistors, internal circuits, and external circuits.

In forming interconnect elements, semiconductor dies may require processes such as masking, etching, and deposition to form the electronic circuitry required for semiconductor devices. In particular, the multilayer mask and plasma etch process can form a pattern of recessed regions in the dielectric layer of the semiconductor wafer for serving as trenches and vias for the interconnect lines. In order to remove particles and contamination generated in the grooves and vias during etching or photoresist ashing, a wet cleaning step must be performed. In particular, as device fabrication nodes continue to approach and are less than 65 nm, sidewall loss of trenches and vias is critical to maintaining critical dimensions. To reduce or eliminate sidewall losses, it is important to apply mild, diluted chemicals, or sometimes only deionized water. However, diluted chemical reagents or deionized water often do not effectively remove particles in the channels and vias. Therefore, in order to effectively remove particles, it is necessary to use a mechanical device such as an ultrasonic or megasonic device. Ultrasonic or megasonic devices will provide mechanical force to the surface of the cymbal. Energy density and its distribution are key factors in controlling mechanical forces without damaging the surface of the cymbal and effectively removing particles.

It is mentioned in U.S. Patent No. 4,326,553 that the semiconductor wafer can be cleaned using megasonic energy and nozzle bonding. The fluid is pressurized and megasonic energy is applied to the fluid by a megaphone. A nozzle of a specific shape ejects a liquid like a belt and vibrates at a megasonic frequency on the surface of the cymbal.

An energy source is disclosed in U.S. Patent No. 6,039,059 to transmit sonic energy into a fluid by vibrating an elongated probe. In one example, fluid is sprayed onto both sides of the cymbal and a probe is placed adjacent the upper surface of the cymbal. In another example, a short probe tip is placed adjacent the surface of the cymbal, and the probe moves over the surface of the cymbal during rotation of the cymbal.

An energy source is mentioned in U.S. Patent No. 6,843,257 B2 to cause a rod to vibrate about an axis parallel to the surface of the cymbal. The surface of the rod is etched into a curved dendrite, such as a spiral groove.

Providing the right amount of uniform megasonic energy to the entire surface of the cymbal is the key to the cleaning process. If the megasonic energy is not evenly applied to the surface of the cymbal, the portion of the cymbal that yields less megasonic energy will not be cleaned, and particles and contamination will remain on the surface of the cymbal, resulting in excessive ultrasonic energy. In the crotch portion, the micro-ejection of high temperature and high pressure is generated due to the implosion of the bubble, so that the device structure of the surface may be damaged.

In order to remove particles and contamination of the ruthenium or substrate surface with high efficiency and low damage to the structure, a good method is needed to control the energy density distribution of the megaphone on the surface of the cymbal.

One method described in the present invention is to direct the megasonic device toward the front side of the rotating cymbal during the cleaning process and continuously change the distance between the megasonic device and the cymbal as the cymbal continues to rotate. The distance between the megasonic wave and the cymbal is varied by rotating the megasonic device clockwise and/or counterclockwise about an axis parallel to the front side of the cymbal.

Another method described in the present invention is to direct the megasonic device toward the front side of the rotating cymbal during the cleaning process and continuously change the distance between the megasonic device and the cymbal as the cymbal continues to rotate. The distance between the megasonic wave and the cymbal is varied by rotating the surface of the cymbal about a clock parallel to the surface of the megasonic device clockwise and/or counterclockwise.

Another method described in the present invention is to direct the megasonic device toward the back of the rotating cymbal during the cleaning process and continuously change the distance between the megasonic device and the cymbal as the cymbal continues to rotate. The distance between the megasonic wave and the cymbal is varied by rotating the megasonic device clockwise and/or counterclockwise about an axis parallel to the back of the cymbal.

Another method described in the present invention is to direct the megasonic device toward the back of the rotating cymbal during the cleaning process and continuously change the distance between the megasonic device and the cymbal as the cymbal continues to rotate. The distance between the megaphone and the cymbal is varied by rotating the cymbal clockwise and/or counterclockwise about an axis parallel to the surface of the megasonic device.

Figures 1A through 1B illustrate a common apparatus for cleaning a cymbal using a megasonic instrument. The cymbal cleaning device includes a cymbal 1010, a rotating cymbal holder 1014 controlled by a rotary actuator 1016, a nozzle 1012 for delivering a cleaning fluid chemical or deionized water (flowing liquid) 1032, and a megasonic device 1003. The megasonic device 1003 is comprised of a piezoelectric sensor 1004 and an acoustic resonator 1008 paired therewith. The sensor 1004 acts as a vibration after being energized, and the resonator 1008 transmits high frequency sound energy into the liquid. The vibration of the cleaning fluid generated by the megasonic energy loosens the particles on the surface of the cymbal 1010 and is thereby removed from the surface of the cymbal by the flowing liquid 1032 provided by the nozzle 1012.

As shown in Fig. 1C, in order to obtain the minimum reflected energy, the phase of the reflected wave r1 (ejected from the upper surface of the water film) must be opposite to the phase of the reflected wave R2 (ejected from the lower surface of the water film), so that the thickness of the water film should be equal to:

d=n λ/2,n=1,2,3... (1)

Here, d is the thickness of the water film or the distance between the megasonic device 1003 and the cymbal 1010, n is an integer, and λ is the wavelength of the megaphone in water. For example, when the frequency of the megaphone is 937.5 K Hz, λ = 1.6 mm, d = 0.8 mm, 1.6 mm, 2.4 mm, and the like.

Figure 1D shows the relationship between the spacing d and the megasonic energy density measured by the sensor 1002 shown in Figure 1A. In the process of increasing the pitch to 0.4 mm, a plurality of energy density values from a valley value of 0.28 w/cm 2 to a peak value of 1.2 w/cm 2 can be obtained, and a completeness can be obtained when the pitch is increased to 0.8 mm (0.5 λ). Cycle. Precisely and stably controlling the spacing is the key to maintaining a uniform megasonic energy distribution across the surface of the cymbal.

However, it is actually difficult to accurately maintain a uniform spacing, especially when the cymbal is in the rotating mode. As shown in Fig. 2, if the axis of the cymbal clip 1014 is not 100% perpendicular to the surface of the megasonic device 2003, the distance between the megasonic device and the surface of the cymbal 2010 will decrease from the edge of the cymbal to the center of the cymbal. According to the data shown in Fig. 1D, this will cause uneven distribution of megasonic energy from the edge of the sepal to the center of the sepal.

As shown in Figures 3A and 3B, another cause of the change in spacing may be due to the fact that the axis of rotation of the cymbal clip is not perpendicular to the surface of the cymbal 3010. The flap is swung while rotating, and Fig. 3B shows the state after being rotated by 180 degrees from the state shown in Fig. 3A. The spacing at the edge of the cymbal is reduced from the maximum shown in Figure 3A to the minimum shown in Figure 3B. This will result in a non-uniform distribution of megasonic energy density on the surface of the cymbal when the megasonic device is applied to the cymbal. All of these uneven energy distributions will result in damage to the device structure on the surface of the cymbal and uneven cleaning of the cymbal.

In order to overcome the uneven energy distribution caused by the pitch variation during the rotation of the cymbal clip, the present invention discloses a method as shown in Figures 4A-4E. During the cleaning process, the distance between the megasonic device 4003 and the cymbal 4010 is varied by controlling the motor 4006 as the cymbal clip 4014 rotates. Control unit 4088 is used to control the speed of motor 4006 based on the speed of motor 4016. While the cymbal 4010 or cymbal clip 4014 is rotating, the control unit 4088 will command the motor 4006 to drive the megasonic device 4003 to rotate about the axis 4007 in a clockwise and/or counterclockwise direction. Each rotation of the cymbal 4010 or the cymbal clip 4014, the rotation angle increment of the corresponding motor 4006 is,

Δα=0.5λ/(FN) (2)

Here, F is the width of the megasonic device 4003, λ is the wavelength of the ultrasonic or megasonic wave, and N is an integer from 2 to 1000.

After the cymbal clip 4014 is rotated N times, the megasonic device rotates at an angle of 0.5 nλ/F, where n is an integer starting from 1.

Further details are shown in Figure 6. When the cymbal or cymbal clip changes the spacing for each revolution, the megasonic energy density changes from P1 to P2 at the same position of the cymbal. When the pitch is increased to half the wavelength of the megaphone, the energy density changes by one cycle from P1 to P11. The starting point of the period depends on the distance between the megasonic device and the specific position of the cymbal. However, as the distance increases to half the wavelength of the megaphone, each part of the cymbal will have a full cycle of energy density. In other words, when the megasonic device moves up to the half wavelength of the megaphone (0.8 mm at a frequency of 937.5 kHz), even the megasonic device and the 导致 are caused by the reasons mentioned in Fig. 2, Fig. 3A and Fig. 3B. The distance between the sheets is not uniform, and each part of the cymbal will also get a full cycle of energy density. This will ensure that each point of the cymbal has the same amount of megasonic energy density, including the same average energy density, the same maximum energy density and the same minimum energy density. The operation process is as follows:

Process 1 (megasonic frequency: f = 937.5 kHz, wavelength λ = 1.6 mm in deionized water):

Step 1: Rotate the cymbal at a speed ω ranging from 10 rpm to 1500 rpm.

Step 2: Move the megasonic device to a position where the distance from the cymbal is d, and d ranges from 0.5 to 5 mm.

Step 3: Open the nozzle to spray deionized water or chemical reagents, then turn on the megasonic device. The megasonic device has an energy density in the range of 0.1 to 1.2 w/cm ² and a preferred range of 0.3 to 0.5 w/cm ² .

Step 4: Each time the cymbal clip 4014 makes one revolution, the megasonic device 4003 is rotated clockwise by an angle of 0.5 λ/(FN), where N is an integer from 2 to 1000.

Step 5: Continue the operation of step 4 until the angle of the megasonic device clockwise is 0.5 nλ/F, where n is an integer starting from 1.

Step 6: Each time the cymbal clip 4014 makes one revolution, the megasonic device 4003 is rotated counterclockwise by an angle of 0.5 λ/(FN), where N is an integer from 2 to 1000.

Step 7: Continue the operation of step 6 until the angle of the megasonic device counterclockwise reaches 0.5nλ/F, where n is an integer starting from 1.

Step 8: Repeat steps 4 through 7 until the wafer cleaning is complete.

Step 9: Turn off the megasonic device and stop spraying deionized water or chemical reagents to dry the bracts.

Process 2 (megasonic frequency: f = 937.5 kHz, wavelength λ = 1.6 mm in deionized water):

Step 1: Rotate the cymbal at a speed ω ranging from 10 rpm to 1500 rpm

Step 2: Move the megasonic device to a position where the distance from the cymbal is d, and d ranges from 0.5 to 5 mm.

Step 3: Open the nozzle to spray deionized water or chemical reagents, then turn on the megasonic device. The megasonic device has an energy density in the range of 0.1 to 1.2 w/cm ² and a preferred range of 0.3 to 0.5 w/cm ² .

Step 4: Each revolution of the cymbal clip rotates the megasonic device in a clockwise direction by an angle of 0.5 λ/(FN), where N is an integer from 2 to 1000.

Step 5: Continue the operation of step 4 until the angle of the megasonic device clockwise is 0.5 nλ/F, where n is an integer starting from 1.

Step 6: Turn off the megasonic device and stop spraying deionized water or chemical reagents to dry the bracts.

The frequency of the sensor can be set in the range of ultrasonic and megasonic waves, and the frequency depends on the size of the particles being cleaned. The larger the particle size, the lower the frequency used. Ultrasonic ranges from 20 kHz to 200 kHz, while megaphones range from 200 kHz to 10 MHz. In order to remove particles of different sizes on the same substrate or bract surface, it is also necessary to alternate the frequency of the mechanical waves continuously or simultaneously. If a double wave frequency is used, the high frequency f ₁ should be an integer multiple of the low frequency f ₂ , and the angular range of the sensor rotation should be 0.5λ ₂ n/F, and the sensor clip rotates one turn per sensor. The increase or decrease of the rotation angle should be 0.5λ ₁ /(FN), where λ ₂ is the wavelength corresponding to the low frequency wave of frequency f ₂ , λ ₁ is the wavelength corresponding to the high frequency wave of frequency f ₁ , and N is the An integer between 2 and 1000, where n is an integer starting from 1.

An example of the use of chemical reagents to remove particles and contamination is described below:

Organic removal: H ₂ SO ₄ :H ₂ O ₂ =4:1

Organic removal: Ozone: H ₂ O = 50: 1000,000

Particle reduction: NH ₄ OH: H ₂ O ₂ : H ₂ O = 1:1: 5

Metal contamination removal: HCl: H ₂ O ₂ : H ₂ O = 1:1: 6

Oxide removal: HF: H ₂ O = 1:100

Figures 5A through 5C show another example of applying a megasonic instrument to a cymbal cleaning device in accordance with the present invention. This device is similar to the device shown in Figure 4, except that the rotating device 5009 is added. While the crotch panel 5010 or the crotch clamp 5014 is rotated, the control unit 5088 controls the motors 5006 and 5009 to change the distance d between the megasonic device 5003 and the crotch panel 5010. When the cymbal 5010 or the cymbal clip 5014 is rotated, the control unit 5088 commands the motor 5006 to control the megasonic device 5003 to rotate in a clockwise or counterclockwise direction about the axis 5007, while commanding the motor 5009 to control the megasonic device 5003 to follow the axis 5011. Rotate clockwise or counterclockwise. Each rotation of the cymbal 5010 or the cymbal clip 5014, the rotation angle of the motor 5006 is increased,

Δα=0.5λ/(FN) (3)

Here, F is the width of the megasonic device 5003, λ is the wavelength of the ultrasonic or megasonic wave, and N is an integer from 2 to 1000.

After the cymbal clip 5014 is rotated N turns, the megasonic device 5003 has a total rotation angle of 0.5n λ/F, where n is an integer starting from 1.

Each rotation of the cymbal 5010 or the cymbal clip 5014, the rotation angle of the motor 5009 is increased,

Δβ=0.5λ/(LN) (4)

Here, L is the length of the megasonic device, λ is the wavelength of the ultrasonic or megasonic wave, and N is an integer from 2 to 1000.

After the cymbal clip 5014 is rotated N times, the megasonic device 5003 has a total rotation angle of 0.5 nλ/L, where n is an integer starting from 1.

Figure 7 shows another example of the application of a megasonic instrument to a cymbal cleaning device in accordance with the present invention. This device is similar to the device shown in Figure 4, except that while the cymbal 7010 is rotated, the cymbal clip 7014 is rotated clockwise and counterclockwise about the axis 7007 under the control of the motor 7006. More specifically, the control unit 7084 commands the motor 7006 to control the cymbal clip 7014 to rotate in a clockwise and counterclockwise direction about the shaft 7007, thereby changing the distance d between the megasonic device 7003 and the cymbal 7010.

Figure 8 shows another example of the application of a megasonic instrument to a cymbal cleaning device in accordance with the present invention. This device is similar to the device shown in Figure 7, except that while the cymbal 8010 is rotated, another motor 8009 is added to control the cymbal holder 8014 to rotate in a clockwise and counterclockwise direction about the axis 8011. More specifically, control unit 8088 commands motors 8006 and 8009 to control cymbal clip 8014 to rotate in a clockwise and counterclockwise direction about axis 8007 and axis 8011, respectively, thereby varying the distance d between megasonic device 8003 and cymbal 8010. .

Figure 9 shows another example of the application of a megasonic instrument to a cymbal cleaning device in accordance with the present invention. This device is similar to the device shown in Figure 4, except that the megasonic device 9003 is placed on the back of the cymbal 9010 and rotated in a clockwise and counterclockwise direction about the axis 9007 under the control of the motor 9006. Motor 9006 is coupled to the cymbal clip 9014. The control unit 9088 commands the motor 9006 to control the megasonic device 9003 to rotate in a clockwise and counterclockwise direction about the axis 9007, thereby changing the distance d between the megasonic device 9003 and the back of the cymbal 9010. The megasonic waves are transmitted through the water film 9034 and the cymbal sheet 9010 to the front surface of the cymbal sheet 9010 and the water film 9032. Nozzle 9015 provides deionized water or chemicals to maintain water film 9034 between the megasonic device 9003 and the back of the cymbal 9010. The advantage of this device is that damage to the device structure on the front side of the cymbal 9010, which may be caused by megasonic waves, can be reduced or eliminated.

Figure 10 shows another example of the application of a megasonic instrument to a cymbal cleaning device in accordance with the present invention. This device is similar to the device shown in Figure 9, except that while the cymbal 10010 is rotated, another motor 10009 is added to control the cymbal clip 10014 to rotate in a clockwise and counterclockwise direction about the axis 10011. More specifically, the control unit 10088 commands the motors 10006 and 10009 to control the cymbal clip 10014 to rotate in both clockwise and counterclockwise directions about the axis 10007 and the shaft 10011, thereby changing the distance d between the megasonic device 10003 and the cymbal 10010. .

Figure 11 shows another example of the application of a megasonic instrument to a cymbal cleaning device in accordance with the present invention. This device is similar to the device shown in Figure 4, except that there is an angle a between the surface of the piezoelectric sensor 11004 and the surface of the cymbal plate 11010. The resonator 11008 is connected to the piezoelectric sensor 11004, and the megasonic wave is transmitted to the cymbal through the resonator 11008 and the deionized water film or chemical reagent film 11032. Processes 1, 2 and 3 can be applied here.

Figure 12 shows another example of the application of a megasonic instrument to a cymbal cleaning device in accordance with the present invention. This device is similar to the device shown in Fig. 11 except that a rotating device 12009 is added. The control unit 12088 changes the distance d between the megaphone resonator 12008 and the cymbal by controlling the motors 12006 and 12009. More specifically, each time the cymbal 12010 or cymbal clip 12014 is rotated, the control unit 12088 commands the motor 12006 to control the megasonic resonator 12008 to rotate in a clockwise and counterclockwise direction about the axis 12007 while commanding the motor 12009 to control the megas. The acoustic resonator 12008 rotates clockwise and counterclockwise about the axis 12011.

Figure 13 shows another example of the application of a megasonic instrument to a cymbal cleaning device in accordance with the present invention. This device is similar to the device shown in Figure 4, except that the crotch panel 13010 is facing down, and a row of nozzles 13018 are facing the front of the crotch panel 13010. The megasonic waves pass through the water film 13032 and the septum 13010 itself to the front side of the septum 13010. A row of nozzles 13018 sprays a chemical liquid or deionized water onto the front side of the cymbal 13010.

Figure 14 shows another example of the application of a megasonic instrument to a cymbal cleaning device in accordance with the present invention. This device is similar to the device shown in Figure 4, except that a motor 14014 and a screw rod 14005 are added. When the cymbal 14010 and the cymbal clip 14014 are rotated, the control unit 14088 commands the motor 14006 to control the megasonic device 14003 to rotate in a clockwise and counterclockwise direction about the axis 14007 while commanding the motor 14040 to control the megasonic device 14003 to move up and down. Each time the cymbal 14010 and the cymbal clip 14014 are rotated, the motor 14040 controls the megasonic device 14003 to move up or down:

Δz=0.5λ/N (5)

Here λ is the wavelength of the ultrasonic or megasonic wave, and N is an integer from 2 to 1000.

After the cymbal 14010 or the cymbal clip 14014 is rotated N turns, the megasonic device 14003 is moved up by 0.5n λ, where n is an integer starting from 1.

Figure 15 shows another example of the application of a megasonic instrument to a cymbal cleaning device in accordance with the present invention. During the cleaning process, the distance between the megasonic device 15003 and the cymbal 15010 is changed by the motor 15006 while the cymbal clip is rotated. Control unit 15088 controls the speed of motor 15006 based on the speed of motor 15016. While the crotch panel 15010 and the crotch clamp 15014 are rotated, the control unit 15088 commands the motor 15006 to control the megasonic device 1503 to rotate in a clockwise and counterclockwise direction about the axis 15011. Each rotation of the cymbal 15010 and the cymbal clip 15014, the rotation angle of the motor 15006 is increased,

Δγ=0.5λ/(MN) (6)

Here, M is the distance between the axis 15011 and the center position of the megasonic device 1503, λ is the wavelength of the ultrasonic or megasonic wave, and N is an integer from 2 to 1000.

After the cymbal clip 15014 is rotated N times, the megasonic device 15003 is moved up by 0.5 nλ/M, where n is an integer starting from 1.

16A to 16G are top views of a megasonic device in accordance with the present invention. The megasonic device shown in Fig. 4 can be replaced by a megasonic device 16003 of a different shape, that is, a triangle or pie shape as shown in Fig. 16A, a rectangle as shown in Fig. 16B, and an octagon as shown in Fig. 16C, as shown in Fig. 16D. The elliptical shape, as shown in Fig. 16E, covers a semicircle of a half of a cymbal, a quarter circle as shown in Fig. 16F, and a circular shape which can cover the entire cymbal as shown in Fig. 16G. For the example shown in 16G, since the megasonic device covers the entire cymbal, the cymbal or cymbal clip does not need to be rotated during the cleaning process. In other words, the distance between the cymbal and the megasonic device varies as previously described, while the cymbal and cymbal clips do not rotate.

According to one example, the vertical distance between the ultra/megasonic device and the semiconductor substrate or wafer is varied during the rotation of the surface of the ultra/megasonic device or semiconductor substrate in a clockwise or counterclockwise direction. The change in vertical distance is achieved by moving the super/mega sonic device or the cymbal clip. According to one example, the semiconductor substrate is rotated, for example, the fixture of the semiconductor substrate is rotated with the semiconductor substrate. And while the cymbal clip rotates, the super/ megasonic device or semiconductor substrate also rotates in a clockwise or counterclockwise direction and changes the vertical distance between the super/ megasonic device and the semiconductor substrate. Thereby a better uniform megasonic energy density distribution is achieved.

While the present invention has been described with respect to the specific embodiments, examples and applications, the invention is not intended to

1002. . . Sensor

1003. . . Megasonic device

1004. . . Sensor

1008. . . Resonator

1010. . . Bract

1012. . . nozzle

1014. . . Stencil clip

1016. . . Rotary transmission

1032. . . Flowing liquid (deionized water)

2003. . . Megasonic device

2010. . . Bract

3010. . . Bract

4003. . . Megasonic device

4006. . . motor

4007. . . axis

4010. . . Bract

4014. . . Stencil clip

4016. . . motor

4088. . . control unit

5003. . . Megasonic device

5006. . . motor

5007. . . axis

5009. . . Rotating device (motor)

5010. . . Bract

5011. . . axis

5014. . . Stencil clip

5088. . . control unit

7003. . . Megasonic device

7006. . . motor

7007. . . axis

7010. . . Bract

7014. . . Stencil clip

7088. . . control unit

8003. . . Megasonic device

8006. . . motor

8007. . . axis

8009. . . motor

8010. . . Bract

8011. . . axis

8014. . . Stencil clip

8088. . . control unit

9003. . . Megasonic device

9006. . . motor

9007. . . axis

9010. . . Bract

9014. . . Stencil clip

9015. . . nozzle

9032. . . Water film

9034. . . Water film

9088. . . control unit

10003. . . Megasonic device

10006. . . motor

10007. . . axis

10009. . . motor

10010. . . Bract

10011. . . axis

10014. . . Stencil clip

10088. . . control unit

11004. . . Sensor

11008. . . Resonator

11010. . . Bract

11032. . . Chemical reagent

12006. . . motor

12007. . . axis

12008. . . Resonator

12009. . . Rotating device (motor)

12010. . . Bract

12011. . . axis

12014. . . Stencil clip

12088. . . control unit

13010. . . Bract

13018. . . nozzle

13032. . . Water film

14003. . . Megasonic device

14005. . . Screw rod

14006. . . motor

14007. . . axis

14010. . . Bract

14014. . . Stencil clip

14040. . . motor

14088. . . control unit

15003. . . Megasonic device

15006. . . motor

15010. . . Bract

15011. . . axis

15014. . . Stencil clip

15016. . . motor

15088. . . control unit

16003. . . Megasonic device

Figures 1A-1D depict a typical cymbal cleaning device;

Figure 2 depicts a typical cymbal cleaning process;

Figures 3A-3B depict another exemplary cymbal cleaning device;

4A-4E depict another exemplary cymbal cleaning device;

Figures 5A-5C further depict another exemplary cymbal cleaning device;

Figure 6 depicts a cleaning method;

Figure 7 depicts another typical cymbal cleaning device;

Figure 8 depicts another typical cymbal cleaning device;

Figure 9 depicts another typical cymbal cleaning device;

Figure 10 depicts another typical cymbal cleaning device;

Figure 11 depicts another typical cymbal cleaning device;

Figure 12 depicts another typical cymbal cleaning device;

Figure 13 depicts another typical cymbal cleaning device;

Figure 14 depicts another typical cymbal cleaning device;

Figures 15A-15C depict another exemplary cymbal cleaning device;

Figures 16A-16G depict various shapes of ultrasonic or megasonic sensors.

1002. . . Sensor

1003. . . Megasonic device

1004. . . Sensor

1008. . . Resonator

1010. . . Bract

1012. . . nozzle

1014. . . Stencil clip

1016. . . Rotary transmission

1032. . . Flowing liquid (deionized water)

Claims (27)

A method of cleaning a semiconductor substrate using an ultrasonic or megasonic device, comprising: sandwiching a semiconductor substrate with a cymbal holder; placing a set of super/megasonic devices at a position close to the semiconductor substrate; using at least one nozzle Chemical liquid is ejected into the gap between the semiconductor substrate and the semiconductor substrate and the super/megasonic device; the semiconductor substrate and the super/megaphone are changed by changing the angle between the semiconductor substrate and the super/megaphone device The vertical distance between the devices, wherein the micro/megasonic device or the semiconductor substrate is also rotated clockwise or counterclockwise around the axis to change the semiconductor substrate and the super/megaphone while the wafer holder is sandwiched by the rotation of the semiconductor substrate. The vertical distance between the devices, which is parallel to the surface of the super/megasonic device or semiconductor substrate. The method of claim 1, wherein the super/megasonic device is placed toward and near the front side of the semiconductor substrate; and by bypassing the super/megasonic device parallel to the front surface of the semiconductor substrate The shaft rotates clockwise or counterclockwise to change the size of the gap. The method of claim 2, further comprising: rotating the cymbal clip about an axis perpendicular to a surface of the semiconductor substrate, and changing the semiconductor substrate and the super while the cymbal clip rotates / Distance between megaphone devices. The method of claim 2, further comprising: moving the ultra/megasonic device in a direction perpendicular to the semiconductor substrate, or moving the cymbal in a direction perpendicular to the super/ megasonic device folder. The method of claim 1, wherein the super/megasonic device is placed toward and near the back of the semiconductor substrate, and by winding the super/megasonic device parallel to the back of the semiconductor substrate. The shaft rotates clockwise or counterclockwise to change the size of the gap. The method of claim 5, further comprising: rotating the cymbal clip about an axis perpendicular to a surface of the semiconductor substrate, and changing the semiconductor substrate and the super while the cymbal clip rotates / Distance between megaphone devices. The method of claim 5, further comprising: moving the ultra/megasonic device in a direction perpendicular to the semiconductor substrate, or moving the cymbal in a direction perpendicular to the super/ megasonic device folder. The method of claim 1, wherein the super/megasonic device is placed at a position facing and facing the front surface of the semiconductor substrate; And the size of the gap is changed by rotating the front side of the semiconductor substrate clockwise or counterclockwise about an axis parallel to the surface of the super/ megasonic device. The method of claim 8, further comprising: rotating the cymbal clip about an axis perpendicular to a surface of the semiconductor substrate, and changing the semiconductor substrate and the super while the cymbal clip rotates / Distance between megaphone devices. The method of claim 8, further comprising: moving the ultra/megasonic device in a direction perpendicular to the semiconductor substrate, or moving the cymbal in a direction perpendicular to the super/ megasonic device; folder. The method of claim 1, wherein the super/megasonic device is placed toward and near the back of the semiconductor substrate. And the size of the gap is changed by rotating the back surface of the semiconductor substrate clockwise or counterclockwise about an axis parallel to the surface of the ultra/megasonic device. The method of claim 11, further comprising: rotating the cymbal clip about an axis perpendicular to a surface of the semiconductor substrate, and changing the semiconductor substrate and the super while the cymbal clip rotates / Distance between megaphone devices. The method of claim 11, further comprising: moving the ultra/megasonic device in a direction perpendicular to the semiconductor substrate, or moving the cymbal in a direction perpendicular to the super/ megasonic device; folder. The method of claim 1, wherein the cymbal clip does not rotate during the cleaning process. A device for cleaning a semiconductor substrate using an ultra/mega sonic device, comprising: a die holder sandwiching a semiconductor substrate; a set of super/mega sonic devices placed adjacent to the semiconductor substrate; at least one nozzle for injecting chemical liquid to In the gap between the semiconductor substrate and the semiconductor substrate and the super/megasonic device; the control unit and the transmission change the semiconductor substrate and the super/mega by changing the angle between the semiconductor substrate and the super/megaphone device The vertical distance between the acoustic wave devices, wherein the micro/megasonic device or the semiconductor substrate is also rotated clockwise or counterclockwise around the axis to change the semiconductor substrate and the super/megaphone while the wafer holder is sandwiched by the rotation of the semiconductor substrate. The vertical distance between the acoustic wave devices, which is parallel to the surface of the super/megasonic device or semiconductor substrate. A device as claimed in claim 15 wherein the super/megasonic device is placed in a position facing and facing the front side of the semiconductor substrate. And the control unit and the transmission change the size of the gap by rotating the super/mega sonic device clockwise or counterclockwise about an axis parallel to the front side of the semiconductor substrate. The device of claim 16, further comprising a motor that drives the cymbal to rotate about an axis perpendicular to the surface of the semiconductor substrate, and the control unit and the transmission change while the cymbal holder rotates The distance between the semiconductor substrate and the super/mega sonic device. The device of claim 16, further comprising a second transmission controlled by the control unit, the second transmission driving the super/mega sonic device to move in a direction perpendicular to the semiconductor substrate, or The drive cymbal clip moves in a direction perpendicular to the super/ megasonic device. The device of claim 15, wherein the super/megaphone device is placed toward and near the back of the semiconductor substrate. And the control unit and the transmission change the size of the gap by rotating the super/megasonic device clockwise or counterclockwise about an axis parallel to the back side of the semiconductor substrate. The device of claim 19, further comprising a motor that drives the cymbal member to rotate about an axis perpendicular to a surface of the semiconductor substrate, and the cymbal holder rotates while the control unit transmits The moving device changes the distance between the semiconductor substrate and the super/megaphone device. The device of claim 19, further comprising a transmission driving the super/mega sonic device to move in a direction perpendicular to the semiconductor substrate, or driving the cymbal holder perpendicular to the super/mega sonic device The direction of the surface moves. The apparatus of claim 15 wherein the super/megasonic device is placed facing and adjacent to the front side of the semiconductor substrate; and the control unit and the transmission are wound parallel to the super// The axis of the surface of the megasonic device is rotated clockwise or counterclockwise to change the size of the gap. The device of claim 22, further comprising a motor that drives the cymbal to rotate about an axis perpendicular to the surface of the semiconductor substrate, and the control unit and the transmission change while the cymbal clamp rotates The distance between the semiconductor substrate and the super/mega sonic device. The device of claim 22, further comprising a second transmission controlled by the control unit, the second transmission driving the super/mega sonic device to move in a direction perpendicular to the semiconductor substrate, or The drive cymbal clip moves in a direction perpendicular to the super/ megasonic device. The apparatus of claim 15 wherein the super/megasonic device is placed toward and near the back of the semiconductor substrate; and the control unit and the transmission are wound parallel to the super// The axis of the surface of the megasonic device is rotated clockwise or counterclockwise to change the size of the gap. The device of claim 25, further comprising a motor that drives the cymbal to rotate about an axis perpendicular to the surface of the semiconductor substrate, and the control unit and the transmission change while the cymbal clamp rotates The distance between the semiconductor substrate and the super/mega sonic device. The device of claim 25, further comprising a second transmission controlled by the control unit, the second transmission driving the super/mega sonic device to move in a direction perpendicular to the semiconductor substrate, or The drive cymbal clip moves in a direction perpendicular to the super/ megasonic device.