TWI500128B - Package substrate with support and preparation method thereof - Google Patents

Description

Package substrate with support and preparation method thereof

The present invention relates to a package substrate, and more particularly to a package substrate for a QFN package structure and a method of fabricating the same.

Traditionally, there are many types and types of semiconductor packages using lead frames as wafer carriers, such as the conventional Quad Flat package (QFP), and with the booming electronics industry, electronic products are also Gradually towards a multi-functional, high-performance trend, and at the same time towards the development of miniaturization. As a result, 遂 has developed a new Quad Flat Non-leaded (QFN) package structure to reduce the size of the package structure.

Please refer to FIGS. 1A to 1F for a schematic cross-sectional view of a conventional QFN package structure 1.

As shown in FIG. 1A, a copper layer 11 is formed on a carrier 10.

As shown in FIG. 1B, patterned micro-etching is performed on the copper layer 11 to form a plurality of electrical contact pads 12 and a pad 13.

As shown in FIG. 1C, a surface treatment layer 14 is formed on the electrical contact pads 12 and the seed pads 13.

As shown in FIG. 1D, the excess copper layer 11 around the electrical contact pads 12 and the pad 13 is removed to form the package substrate 1a.

As shown in FIG. 1E, the wafer 17 is carried on the crystal pad 13 and electrically connected to the electrical contact pads 12 by a bonding wire 170, and the encapsulant 18 is formed on the carrier 10 to be coated. The electrical contact pads 12, the pad 13, the wafer 17, and the bonding wires 170.

As shown in FIG. 1F, the carrier 10 is removed, and the bottom of the electrical contact pads 12 and the bottom of the crystal pad 13 are exposed.

However, the conventional QFN package structure 1 can only form the electrical contact pads 12 and the pad 13 on one side of the carrier 10, so that only one package substrate 1a can be manufactured in one process. Used in the packaging process, resulting in poor production efficiency, and it is difficult to reduce production costs.

Therefore, how to overcome the various problems of the above-mentioned prior art has become a problem that is currently being solved.

In view of the above-mentioned various deficiencies of the prior art, the present invention discloses a method for manufacturing a package substrate having a support body, comprising: stacking two copper foil substrate sheets with their copper layers; and bonding the reinforcing plates to the two copper foil substrate sheets. Forming a support structure; forming a plurality of electrical contact pads on the tempered plate; and cutting along sides of the two copper foil substrate sheets to separate the copper layers of the two copper foil substrate sheets from each other The support structure is separated into two supports, and two package substrates having the support are obtained.

The invention further provides a package substrate having a support body, comprising: a copper foil substrate piece, a reinforced plate body bonded to the copper foil substrate piece to form a support body, and a plurality of electrical contact pads formed on the reinforced plate body .

In the above package substrate having a support and a method of manufacturing the same, the first metal release layer physically bonds the second metal release layer.

The foregoing package substrate having a support and a method of manufacturing the same may include forming a surface treatment layer on the electrical contact pad.

In addition, the package substrate having the support body and the method for fabricating the same may include forming a crystal pad on the second metal release layer when the electrical contact pads are formed. Alternatively, a build-up structure is formed on the second metal release layer and the electrical contact pad, so that the outermost layer of the buildup structure forms a crystal pad.

It can be seen from the above that the package substrate having the support body of the present invention and the method for manufacturing the same are formed by combining the reinforcing plate body on the two copper foil substrate sheets to form a support structure, so that the crystal pad can be fabricated on both sides of the support structure. The electrical contact pads are used to form two package substrates having the support body, so that one batch of package substrates can be manufactured in one process for use in a packaging process. Therefore, the production method of the present invention can increase the production efficiency to reduce the production cost compared to the productivity of the prior art.

The other embodiments of the present invention will be readily understood by those skilled in the art from this disclosure.

It is to be understood that the structure, the proportions, the size, and the like of the present invention are intended to be used in conjunction with the disclosure of the specification, and are not intended to limit the invention. The conditions are limited, so it is not technically meaningful. Any modification of the structure, change of the proportional relationship or adjustment of the size should remain in this book without affecting the effects and the objectives that can be achieved by the present invention. The technical content disclosed in the invention can be covered. In the meantime, the terms "upper", "lower", "side" and "one" are used in the description, and are not intended to limit the scope of the invention. Changes or adjustments to the relative relationship are considered to be within the scope of the invention without departing from the scope of the invention.

2A to 2D are schematic cross-sectional views showing a method of manufacturing the package substrate 2 having the support 2c of the present invention.

As shown in FIG. 2A, first, a copper clad laminate (CCL) 20 and two reinforced panels 21 are provided. Each of the copper foil substrate sheets 20 has an insulating layer 200 and is disposed on the insulating layer 200. The copper layers 201, 202 on both sides, the two copper foil substrate sheets 20 are overlapped with each other by a copper layer 201, and each of the reinforcing plate bodies 21 has a dielectric layer 210 and a first metal stripping provided on the dielectric layer 210. The layer 211 and the second metal stripping layer 212 disposed on the first metal stripping layer 211. Then, the dielectric layers 210 of the reinforced plate body 21 are respectively pressed onto the two copper foil substrate sheets 20, and the two dielectric layers 210 are integrated to cover the two copper foil substrate sheets 20, and the two are fixed. The copper foil substrate sheet 20 is formed into a support structure 2b.

In this embodiment, the material of the insulating layer 200 can be, for example, Bisaleimide triazine (BT). However, there are many types of copper foil substrate sheets 20 which are well known in the art and will not be described again.

The material of the dielectric layer 210 can be, for example, a prepreg (PP for short), and the thickness of the dielectric layer 210 can be, for example, 100 μm, and the first metal stripping layer 211 and the second metal stripping layer. The 212 series is a copper material, and the thickness of both can be 18 μm and 3 μm.

Moreover, the first metal stripping layer 211 physically bonds the second metal stripping layer 212, and the physical manner is a bonding, static electricity, adsorption, or adhesion, etc., that is, the first metal stripping layer 211 and The second metal stripping layer 212 does not need to be separated by etching.

As shown in FIG. 2B, a plurality of electrical contact pads 22 and a pad 23 are formed on the second metal lift-off layer 212 by a patterning process.

However, there are many methods for patterning processes, such as etching, electroplating, etc., which are well known in the industry and will not be described again.

As shown in FIG. 2C, a surface treatment layer 24 is formed on the electrical contact pads 22. In this embodiment, the material of the surface treatment layer 24 is selected from nickel/gold (Ni/Au), nickel palladium gold (Ni/Pd/Au) or gold, and the formation thereof may be plating or plating. In the other manner, if formed by a plating method, the surface treatment layer 24 is made of nickel/gold (Ni/Au), electroless nickel/electroplated gold (Electroless Nickel/Electroless Palladium/Immersion Gold, ENEPIG) or direct immersion gold. (Direct Immersion Gold, DIG). Alternatively, the surface treatment layer 24 such as electroplated nickel/palladium-plated/plated gold may be formed by a plating and plating method, that is, using the second metal stripping layer 212 as a conductive path.

As shown in the 2C' and 2C", the pad 23 may not be formed first, and the build-up structure 25 is formed on the second metal stripping layer 212 and the electrical contact pad 22, and the surface layer is formed. twenty four.

The build-up structure 25 includes at least one build-up dielectric layer 250, a circuit layer 251 disposed on each of the build-up dielectric layers 250, and conductive vias disposed in each of the build-up dielectric layers 250. 252, the conductive blind via 252 is electrically connected to the circuit layer 251 and the electrical contact pad 22, and the outermost circuit layer 251 has a pad 253 and a plurality of electrical connection pads 254 for the electrical connection pads. A surface treatment layer 24 is formed on 254.

Furthermore, the buildup structure 25 can be one layer (as shown in Figure 2C') or multiple layers (as shown in Figure 2C).

Further, since the package substrate of the present invention is used in the QFN package structure, it is not necessary to form an insulating protective layer on the second metal lift-off layer 212 of Fig. 2 or the build-up structure 25 of the second C' and 2C" patterns.

As shown in FIGS. 2D and 2D', the side of the two copper foil substrate sheets 20 are cut, as shown by the cutting lines L shown in FIGS. 2C and 2C', so that the two copper foil substrate sheets 20 overlap each other. The copper layer 201 is automatically separated, and the support structure 2b is separated into two support bodies 2c to separate the package substrates 2, 2' having the support bodies 2c on the upper and lower sides.

The method for manufacturing the package substrate 2, 2' having the support 2c of the present invention is mainly to form the support structure 2b by bonding the reinforcing plate 21 to the two copper foil substrate sheets 20, so that the support structure 2b can be placed on the support structure 2b. The crystal pad 23 and the electrical contact pad 22 are simultaneously fabricated on both sides, and the support structure 2b is separated into two support bodies 2c to form two package substrates 2, 2' having the support body 2c. Therefore, one batch process can produce two batches of package substrates 2, 2' for use in subsequent packaging processes.

The present invention provides a package substrate 2 having a support 2c, comprising: a copper foil substrate sheet 20 having copper layers 201, 202 on opposite sides, and a reinforcing plate disposed on one of the copper layers 202 of the copper foil substrate sheet 20. The body 21 and the plurality of electrical contact pads 22 formed on the reinforcing plate body 21.

The support body 2c includes the copper foil substrate sheet 20 and the reinforcing plate body 21.

The copper foil substrate sheet 20 further includes an insulating layer 200, and the copper layers 201, 202 are disposed on opposite sides of the insulating layer 200. However, there are many types of copper foil substrate sheets, and there is no particular limitation.

The reinforcing plate body 21 has a dielectric layer 210 bonded to the copper layer 202, a first metal stripping layer 211 disposed on the dielectric layer 210, and a second metal disposed on the first metal stripping layer 211. The peeling layer 212; in the embodiment, the first metal peeling layer 211 physically bonds the second metal peeling layer 212.

The electrical contact pads 22 are disposed on the second metal release layer 212, and the surface treatment layer 24 is formed on the electrical contact pads 22.

The package substrate 2 further includes a pad 23 disposed on the second metal release layer 212.

In another embodiment, the package substrate 2' may further include a build-up structure 25 formed on the second metal release layer 212 and the electrical contact pads 22.

The build-up structure 25 includes at least one build-up dielectric layer 250, a circuit layer 251 disposed on each of the build-up dielectric layers 250, and conductive vias disposed in each of the build-up dielectric layers 250. 252, the conductive blind via 252 is electrically connected to the circuit layer 251 and the electrical contact pad 22, and the outermost circuit layer 251 has a pad 253 and a plurality of electrical connection pads 254, and the electrical connection pads A surface treatment layer 24 is formed on 254.

Please refer to FIGS. 3A to 3D, which are schematic cross-sectional views showing a subsequent packaging process of the package substrate 2 having the support 2c of the present invention. In the present embodiment, the package substrate 2 of FIG. 2D is packaged, and the package substrate 2 has a plurality of package units 2a as shown in FIG. 3C.

As shown in FIG. 3A, following the process of FIG. 2D, a packaging process is performed on which the wafers 27 are disposed, and the electrical contact pads 22 are electrically connected to the wafers 27 by bonding wires 270. Then, an encapsulant 28 is formed on the reinforcing plate 21 of the support 2c to cover the electrical contact pad 22, the pad 23, the wafer 27 and the bonding wire 270.

As shown in FIG. 3B, the first metal stripping layer 211 and the second metal stripping layer 212 are separated to remove the copper foil substrate sheet 20, the dielectric layer 210 and the first metal stripping layer 211, and the outer metal stripping layer 211 is exposed. The second metal stripping layer 212.

In this embodiment, since the first metal stripping layer 211 physically bonds the second metal stripping layer 212, when the first metal stripping layer 211 and the second metal stripping layer 212 are separated, only the stripping is required. Physical separation.

As shown in FIG. 3C, the second metal lift-off layer 212 is removed by etching, and a portion of the bottom portions of the electrical contact pads 22 and a portion of the bottom portion of the crystal pad 23 are microetched to expose the electricity. The bottom of the contact pad 22' is at the bottom of the pad 23'.

As shown in FIG. 3D, cutting is performed along each of the package units 2a, such as the cutting line S shown in FIG. 3C, to obtain a plurality of package structures 3, and solder balls 29 are bonded to the bottom of the electrical contact pads 22'. .

Referring to Fig. 4, there is shown a cross-sectional view showing a subsequent packaging process of the package substrate 2' having the support 2c of the present invention. In the present embodiment, the package substrate 2' of the 2D' is packaged, and the detailed steps of the package process can be referred to the 3A to 3D drawings.

As shown in FIG. 4, the wafer 27 is disposed on the pad 253 of the build-up structure 25, and the electrical connection pads 254 are electrically connected to the wafer 27 by bonding wires 270; and then, the package colloid is formed. 28, to cover the electrical connection pad 254, the crystal pad 253, the wafer 27 and the bonding wire 270.

Finally, the copper foil substrate sheet 20 and the reinforcing plate body 21 are removed, and the soldering and soldering balls 29 are cut to obtain a plurality of package structures 3'.

In summary, the package substrate with the support body of the present invention and the method for manufacturing the same are mainly formed by forming the crystal pad and the electrical contact pad on the upper and lower sides of the support structure, and then separating the support structure into two supports. The body is formed to form two package substrates having the support body, so that two batches of package substrates can be manufactured in one process to improve production efficiency and effectively reduce manufacturing costs.

The above embodiments are intended to illustrate the principles of the invention and its effects, and are not intended to limit the invention. Any of the above-described embodiments may be modified by those skilled in the art without departing from the spirit and scope of the invention. Therefore, the scope of protection of the present invention should be as set forth in the appended claims.

1,3,3’. . . Package structure

1a, 2, 2’. . . Package substrate

10. . . Carrier board

11,201,202. . . Copper layer

12,22,22’. . . Electrical contact pad

13,23,23’,253. . . Crystal pad

14,24. . . Surface treatment layer

17,27. . . Wafer

170,270. . . Welding wire

18,28. . . Encapsulant

2a. . . Package unit

2b. . . supporting structure

2c. . . Support

20. . . Copper foil substrate

200. . . Insulation

twenty one. . . Reinforced plate

210. . . Dielectric layer

211. . . First metal peeling layer

212. . . Second metal peeling layer

25. . . Layered structure

250. . . Additive dielectric layer

251. . . Circuit layer

252. . . Conductive blind hole

254. . . Electrical connection pad

29. . . Solder ball

L, S. . . Cutting line

1A to 1F are schematic cross-sectional views showing a method of manufacturing a conventional QFN package structure;

2A to 2D are schematic cross-sectional views showing a method of manufacturing a package substrate having a support according to the present invention; wherein, the 2C' to 2D' diagram is another embodiment of the 2C to 2D diagram, and the 2C" diagram Another embodiment of the 2C' diagram;

3A to 3D are schematic cross-sectional views showing a subsequent method of applying the package substrate having the support of the present invention;

Fig. 4 is a schematic cross-sectional view showing another embodiment of a subsequent process for applying a package substrate having a support of the present invention.

2. . . Package substrate

2c. . . Support

20. . . Copper foil substrate

200. . . Insulation

201,202. . . Copper layer

twenty one. . . Reinforced plate

210. . . Dielectric layer

211. . . First metal peeling layer

212. . . Second metal peeling layer

twenty two. . . Electrical contact pad

twenty three. . . Crystal pad

twenty four. . . Surface treatment layer

Claims (10)

A package substrate having a support body, comprising:
a copper foil substrate sheet comprising an insulating layer and a copper layer disposed on opposite sides of the insulating layer;
a reinforcing plate body is bonded to one of the copper layers of the copper foil substrate to form the support body from the reinforcing plate body and the copper foil substrate piece, wherein the reinforcing plate body is sequentially disposed on the one copper layer a dielectric layer, a first metal release layer, and a second metal release layer; and an electrical contact pad formed on the second metal release layer. The package substrate having a support according to claim 1, further comprising a surface treatment layer formed on the electrical contact pad. The package substrate having a support according to claim 1, further comprising a crystal pad formed on the second metal release layer. The package substrate having a support according to claim 1, further comprising a build-up structure formed on the second metal release layer and the electrical contact pad, the build-up structure comprising at least one build-up dielectric layer a conductive layer disposed on each of the additional dielectric layers, and a conductive via hole disposed in each of the additional dielectric layers, the conductive blind via electrically connecting the circuit layer and the electrical contact pad, and The outermost circuit layer has a pad and a plurality of electrical connection pads. A method for manufacturing a package substrate having a support body includes:
Providing two copper foil substrate sheets, each of the copper foil substrate sheets having an insulating layer and a copper layer disposed on opposite sides of the insulating layer, and the two copper foil substrate sheets are stacked on each other with their copper layers;
The reinforcing plate body is bonded to the two copper foil substrate sheets to form a supporting structure, and the reinforcing plate body has a dielectric layer covering the two copper foil substrate sheets to fix the copper foil substrate sheets, and is disposed on the dielectric layer. a first metal release layer and a second metal release layer disposed on the first metal release layer;
Forming a plurality of electrical contact pads on the second metal stripping layer; and cutting along the sides of the two copper foil substrate sheets to separate the copper layers of the two copper foil substrate sheets from each other, so that the supporting structure is separated into Two support bodies are obtained, and two package substrates having the support body are obtained. The method of manufacturing a package substrate having a support according to claim 5, wherein the first metal release layer physically bonds the second metal release layer. The method for manufacturing a package structure having a support according to claim 5, wherein the package substrate has a plurality of package units for use in a singulation process. The method for manufacturing a package substrate having a support according to claim 5, further comprising forming a surface treatment layer on the electrical contact pads. The method for manufacturing a package substrate having a support according to claim 5, further comprising forming a crystal pad on the second metal release layer when the electrical contact pads are formed. The method for manufacturing a package substrate having a support according to claim 5, further comprising forming a build-up structure on the second metal release layer and the electrical contact pad before performing the cutting, the build-up structure comprising at least a build-up dielectric layer, a circuit layer disposed on each of the build-up dielectric layers, and a conductive via hole disposed in each of the build-up dielectric layers, the conductive via hole electrically connecting the circuit layer and the conductive layer The electrical contact pad, and the outermost circuit layer has a pad and a plurality of electrical connection pads.