TWI599067B - Monolithic glass substrate selenium sulfide process equipment - Google Patents

Description

Selenium vulcanization process equipment for monolithic glass substrate

The invention relates to a selenium vulcanization process equipment, and more particularly to a selenium vulcanization process equipment for a monolithic glass substrate.

A solar cell having a copper indium gallium selenide (Cu/In/Ga/Se, CIGS) film using a direct energy gap semiconductor material with a band gap between 1.04 eV and 1.68 eV and having a high light absorption coefficient. With a wide range of light absorption, good long-term illumination stability, low material manufacturing cost and good conversion efficiency, CIGS solar cells are currently the most promising solar cells.

For the CIGS solar cell industry, the current mainstream technology is almost a vacuum process, including sputter selenization and multi-source co-evaporation, among which sputter selenization is the main method, and the sputter selenization method is It can be divided into two types, one of which is a technical scheme using a high-temperature furnace, and H ₂ Se is introduced into a closed vacuum for high-temperature selenization. This method can be placed once in the state where the surface of the substrate has a precursor layer. Multiple substrates are placed in a high-temperature furnace, and after a cycle of vacuuming, aeration, heating, holding temperature, cooling, and exhausting, the process time is long (may be as long as 10 hours). However, it is difficult to achieve multi-chip process. Uniform uniformity, high energy consumption and high material consumption make the production cost difficult to reduce; the other method adopts the rapid thermal processing (RTP) technical solution, which can basically be divided into two technologies. Type, one is to deposit a selenium film on the substrate as part of the precursor layer, and then use the continuous heating / holding / cooling / internal transport for rapid selenization, or can be opened / Isolation of the cavity for continuous heating / holding temperature / rapid cooling of selenization. The other type is a rapid selenization technique that can be combined with a selenium film precursor layer or a selenium atmosphere (cracked selenium) that does not contain a selenium film precursor layer.

A copper indium gallium selenide (CIGSS) thin film solar cell was fabricated on a soda glass substrate, and a CIG (copper indium gallium) precursor was fabricated using a vacuum sputtering technique in combination with a Rapid Thermal Processing (RTP) process-selenium/sulfurization method ( Selenization/Sulfurization) The preparation of CIGSS absorbers has the advantages of high quality, fast speed and suitable for large-area production. In the RTP selenization process design, it will be due to the Amorphous or polycrystalline of the Cu-In-Ga precursor film, the tensile or compressive stress and the single layer or multi-layer. Different, in the design of the whole system need to consider: (1) selenium / vulcanization temperature (2) temperature and temperature drop rate (3) selenium / vulcanization time and temperature distribution at each stage (4) selenium / sulfur cracking module design (5 High temperature uniformity design (6) cavity sealing and transfer station design (7) selenium/sulfur atmosphere uniform distribution method (8) selenium/sulfur pollution prevention and recovery mechanism, etc., are all key factors for rapid selenium in selenium atmosphere The selenium vapor deposition precursor is integrated or integrated to perform rapid selenization in a selenium atmosphere.

There are many techniques and methods for manufacturing CIGS solar cells, but there are still no processes in the prior art that can meet both cost-effective and high-efficiency requirements. The main bottleneck lies in the stable large-area CIGS solar cell system. The process technology is still immature, and the main topics of process equipment include: radiant heat non-uniformity during the process of using large-area glass substrates, uniform dispersion of selenium vapor, selenium vapor recovery, and glass substrate deformation under high-temperature process. In U.S. Patent No. 5,758,503, the process of heating at a temperature exceeding 10 ° C per second is described to avoid uneven surface tension of the film caused by liquefaction of selenium during selenization, resulting in poor crystal formation. The solar cell conversion efficiency is reduced. However, the process of using a heating rate of a temperature change of more than 10 ° C per second for a large-area glass substrate often causes the glass substrate to be broken; it is described in US Patent No. 2010/0226629 A1. A method for avoiding selenium contamination in a continuous mass production selenization process, but there is no effective solution in the technology of selenium recovery and heat homogenization.

Therefore, it is necessary to provide a selenium vulcanization process equipment for a glass substrate to solve the lack of the prior art.

It is an object of the present invention to provide a selenium vulcanization process apparatus for a monolithic glass substrate for uniform heating and uniform selenization of a single piece of glass substrate.

Another object of the present invention is to provide a selenium vulcanization process apparatus for a monolithic glass substrate, which is capable of replacing a toxic H ₂ Se or H ₂ S in a vacuum environment in an environment close to atmospheric pressure by cracking selenium or sulfur mixed inert gas. Selenization or vulcanization.

A further object of the present invention is to provide a monolithic glass base The selenium vulcanization process equipment of the board is reused by recycling excess selenium vapor or sulfur vapor in the process, thereby reducing the material cost.

To achieve the above and other objects, the present invention provides a selenium vulcanization process apparatus for a monolithic glass substrate, comprising a first cavity, a first carrier heating module, a first heating group, and a second The cavity, a second carrier heating module, a second heating group, a gas uniform module, a gas recovery module, a cavity connecting channel and a temperature measuring device. The first cavity system has a first gate and a second gate, and is respectively disposed on two sides of the first cavity that are not adjacent to each other; the first carrier heating module is disposed in the first cavity and is Between the first gate and the second gate; the first heating group is disposed in the first cavity and located on a top side and a bottom side of the first carrier module; the second cavity system has a third a gate is disposed on one side of the second cavity; the second carrier heating module is disposed in the second cavity and adjacent to the third gate; the second heating group is disposed in the second The gas is disposed on the top side and the bottom side of the second carrier module; the gas uniformity module is connected to the second cavity to introduce a gas into the second cavity; the gas recovery module is Connected to the second cavity to recover the gas in the second cavity; the cavity connection channel is respectively connected to the first gate of the first cavity and the third gate of the second cavity; And the temperature measuring device is disposed in the cavity connecting passage.

In an embodiment of the present invention, the first carrier heating module has a plurality of first heating rollers, and each of the first heating rollers is provided with a first roller heating unit.

In an embodiment of the invention, the first heating rollers are made of graphite, yttria ceramic, zirconia ceramic, quartz or Inconel.

In an embodiment of the invention, the second carrier heating module has a plurality of second heating rollers, and each of the second heating rollers is provided with a second roller heating unit.

In an embodiment of the invention, the second heating rollers are made of graphite, yttria ceramic, zirconia ceramic, quartz or Inconel.

In an embodiment of the invention, the gas homogenizing module comprises a vapor generating unit, an inert gas control unit, a gas mixing unit, a mixed gas cracking heating unit and a mixed gas distribution unit. The vapor generating unit generates selenium vapor or sulfur vapor and controls the output of the selenium vapor or sulfur vapor by adjusting the pressure; the inert gas control unit outputs an inert gas and controls the output of the inert gas; the gas mixing unit is coupled to The vapor generating unit and the inert gas control unit are connected to mix and output the vapor generated by the vapor generating unit with the inert gas outputted by the inert gas control unit; the mixed gas cracking heating unit and the gas mixing unit And the mixed gas distribution unit is connected to the gas cracking heating unit and the second cavity, and uniformly distributes the gas outputted by the mixed gas cracking heating unit on the glass substrate in the second cavity; .

In an embodiment of the invention, the gas recovery module includes An air suction unit, a condensation unit and a collection unit. The air suction unit is connected to the second cavity through an air suction passage to suck out the gas in the second cavity; the condensation unit is connected to the air suction unit to be used by the air suction unit The sucked vapor and the inert gas are separated from each other; and the collecting unit is connected to the condensing unit to collect the separated vapor and the inert gas.

In an embodiment of the invention, the first heating group comprises a plurality of heating lamps.

In an embodiment of the invention, the second heating group includes a plurality of heating lamps and a plurality of temperature equalizing plates.

In an embodiment of the invention, a first heat insulating mat is further disposed on the inner wall of the first cavity.

In an embodiment of the invention, a second heat insulating mat is further disposed on the inner wall of the second cavity.

In an embodiment of the invention, the temperature measuring device is non-contact.

In an embodiment of the invention, a fourth gate is further disposed on the second cavity and opposite to the side of the third gate.

Therefore, the selenium vulcanization process device of the monolithic glass substrate of the present invention rapidly heats and selenizes/vulcanizes the glass substrate by two cavities, so that on the one hand, the glass substrate can be prevented from being above the softening point for a long time. Temperature and temperature, can also increase the film selenium / vulcanization temperature according to the needs of the process to reduce the temperature of selenium / vulcanization, to achieve energy saving and time-saving effect; by making the glass substrate The chambers reciprocate back and forth to achieve a more uniform temperature throughout the glass substrate, and the selenium/sulfidation gas can be more uniformly distributed on the glass substrate during the selenium/sulfurization operation; Liquid selenium/sulfur and inert gases can be reused, reducing material costs.

The above summary, the following detailed description and the accompanying drawings are intended to further illustrate the manner, the Other objects and advantages of the present invention will be described in the following description and drawings.

1‧‧‧ glass substrate

10‧‧‧Rapid heat treatment unit

100‧‧‧First cavity

101‧‧‧The first gate

102‧‧‧second gate

110‧‧‧First Carrier Heating Module

111‧‧‧First heating roller

112‧‧‧First roller heating unit

120‧‧‧First heating group

121‧‧‧First heating group

130‧‧‧First insulation mat

20‧‧‧Selenium vulcanization temperature control device

200‧‧‧second cavity

201‧‧‧ third gate

202‧‧‧fourth gate

210‧‧‧Second carrier heating module

211‧‧‧Second heating roller

212‧‧‧Second roller heating unit

220‧‧‧second heating group

221‧‧‧heating tube

222‧‧‧Wall plate

230‧‧‧ gas uniform module

231‧‧‧Vapor generating unit

232‧‧‧Inert gas control unit

233‧‧‧ gas mixing unit

234‧‧‧ Mixed gas cracking heating unit

235‧‧‧mixed gas distribution unit

2351‧‧‧ round tube

2352‧‧‧ tablet

2353‧‧‧Main air holes

2354‧‧‧through hole

240‧‧‧ gas recovery module

241‧‧‧sucking unit

242‧‧‧Condensation unit

243‧‧‧Collection unit

250‧‧‧Second insulation mat

300‧‧‧ cavity connection

301‧‧‧Temperature measuring device

1 is a schematic view of a rapid thermal processing apparatus in an embodiment of the present invention.

2 is a schematic view of a selenium vulcanization temperature holding device according to an embodiment of the present invention.

3 is a functional block diagram of a gas uniformity module in accordance with an embodiment of the present invention.

4 is a schematic view of a mixed gas distribution unit in an embodiment of the present invention.

FIG. 5 is a functional block diagram of a gas recovery module in accordance with an embodiment of the present invention.

6 is a schematic view showing the combination of a rapid thermal processing device and a selenium vulcanization temperature maintaining device according to an embodiment of the present invention.

The embodiments of the present invention are described below by way of specific examples, and those skilled in the art can readily appreciate other advantages and functions of the present invention from the disclosure herein.

Selenium vulcanization process equipment for monolithic glass substrate of the present invention In an embodiment, the apparatus of the present invention can be divided into two parts according to function: a rapid thermal processing (RTP) apparatus and a selenium sulfide holding temperature apparatus. Please refer to FIG. 1, which is a schematic diagram of a rapid thermal processing (RTP) device in accordance with an embodiment of the present invention. The rapid thermal processing device 10 of the present invention is used for rapidly increasing the temperature of a glass substrate 1 for the purpose of providing a device for quickly heating a glass substrate (for example, 10 ° C / S), and having a fast glass substrate The function of transfer station and reciprocating motion. The rapid thermal processing device 10 has a first cavity 100, a first carrier heating module 110, and two first heating groups 120, 121.

The first cavity 100 has a first gate 101 and a second gate 102 that are movable to open or close. The first gate 101 and the second gate 102 are respectively disposed in the first cavity 100. Two sides of the neighborhood. The first carrier heating module 110 is disposed in the first cavity 100 , and the first carrier heating module 110 is disposed between the first gate 101 and the second gate 102 . The first heating group 120 is disposed in the first cavity 100, and the first heating group 120 is disposed on the top side of the first carrier heating module 110, and the first heating group 121 is The bottom side of the first carrier heating module 110 is disposed.

In the process, the rapid thermal processing device 10 of the present invention can be made into a vacuum state by a vacuum pump (not shown), that is, through the first cavity 100, the first gate 101, and the first The two gates 102 are isolated from the outside to form an airtight space, wherein the vacuum state can be a low vacuum state. The glass substrate 1 is movable through the first gate 101 and the second gate 102 The first cavity 100 is inserted into or removed from the first cavity 100.

During the process, the glass substrate 1 can be placed on the first carrier heating module 110. The first carrier heating module 110 can drive the glass substrate 1 to perform repeated reciprocating motion. The first carrier heating module 110 has a plurality of first heating rollers 111, and each of the first heating rollers 111 is provided with a first roller heating unit 112, and the first roller heating units 112 are used for the same. The first heating roller 111 is heated to uniformly heat the first heating roller 111, so that the temperature of the surface of the first heating roller 111 in contact with the glass substrate 1 and the temperature of the glass substrate 1 can be limited to a certain value. Within the scope. Furthermore, the first heating roller 111 can be made of a material resistant to high temperature selenization, such as graphite, yttria ceramic, zirconia ceramic, quartz or Inconel, and the outer layer is made of plasma. The ceramic film is coated to increase the surface friction coefficient and maintain a low heat transfer coefficient.

The first heating groups 120 and 121 are used to heat the glass substrate 1 itself and a CIGS film (not shown) on the upper surface of the glass substrate 1. In this embodiment, the first heating groups 120, 121 may be heated lamps, the heating lamps have a preferred heating rate, and optionally a specific heating tube is used to selectively heat the tubes. The wavelength of the light source is matched with the wavelength of the absorption heat energy of the glass substrate 1 and the CIGS film located on the upper surface thereof to increase the heating efficiency.

In order to maintain the thermal energy in the first cavity 100 as much as possible, a first insulating pad 130 (for example, a graphite blanket) may be disposed on the inner wall of the first cavity 100 to The temperature in the first cavity 100 is held.

Please refer to FIG. 2 , which is a schematic diagram of a selenium vulcanization temperature holding device according to an embodiment of the invention. The selenium vulcanization temperature-holding device 20 of the present invention is a selenium vulcanization process for homogenizing the glass substrate 1, and the object thereof is to provide a device capable of maintaining temperature and selenium vulcanization at a high temperature on a glass substrate, and having a rapid rotation on the glass substrate Station, reciprocating function. The selenium vulcanization temperature holding device 20 includes a second cavity 200, a second carrier heating module 210, a second heating group 220, a gas uniformity module 230, and a gas recovery module 240.

The second cavity 200 has a third gate 201 that can be actively opened or closed and a fourth gate 202 that can be selectively disposed according to design requirements. The second carrier heating module 210 is disposed in the second cavity 200, and the second carrier heating module 210 is disposed between the third gate 201 and the fourth gate 202. The second heating group 220 is disposed in the second cavity 200, and the second heating group 220 is disposed on the top side and the bottom side of the second carrier heating module 210.

In the process, the selenium vulcanization temperature holding device 20 is also similar to the rapid thermal processing device 10, and is insulated from the outside by the second cavity 200, the third gate 201 and the fourth gate 202 to form a low vacuum state. The airtight space. The glass substrate 1 can be moved into the second cavity 200 through the third gate 201 and the fourth gate 202 or removed from the second cavity 200.

During the manufacturing process, the glass substrate 1 can be placed on the second carrier heating module 210, and the second carrier heating module 210 can drive the glass The glass substrate 1 performs a reciprocating motion. Similar to the first carrier heating module 110, the second carrier heating module 210 can also have a plurality of second heating rollers 211, and each of the second heating rollers 211 is provided with a second roller heating unit 212. Furthermore, the second heating roller 211 can be made of a material resistant to high temperature selenization, such as graphite, yttria ceramic, zirconia ceramic, quartz or Inconel, and the outer layer is made of plasma. The ceramic film is coated to increase the surface friction coefficient and maintain a low heat transfer coefficient.

The second heating group 220 is used for heating the glass substrate 1 itself and a CIGS film (not shown) on the upper surface of the glass substrate 1. The second heating group 220 includes a plurality of heating lamps 221 and a plurality of The temperature equalizing plate 222 passes through the heating lamps 221 to heat the temperature equalizing plates 222 to the temperature required for the process. Furthermore, a side of the second cavity 200 on which the glass substrate 1 is placed may have a design of a reflective cover (not shown) to compensate for the lower boundary temperature. It should be noted that the temperature equalizing plate 222 above the second cavity 200 can have a plurality of openings as a passage for the gas uniformity module 230 and the gas inlet and outlet of the gas recovery module 240.

In order to maintain the thermal energy in the second cavity 200 as much as possible, a second insulating pad 250 (for example, a graphite blanket) may be disposed on the inner wall of the second cavity 100 to maintain the temperature in the second cavity 200.

Please refer to FIG. 3, which is a functional block diagram of a gas uniformity module according to an embodiment of the present invention. The gas uniformity module 230 includes a vapor generating unit 231, an inert gas control unit 232, and a gas mixing unit 233. A mixed gas cracking heating unit 234 and a mixed gas distributing unit 235.

The vapor generating unit 231 is configured to generate selenium vapor or sulfur vapor in a selenium or vulcanization process, and control an appropriate amount of pressure to control the output of selenium or sulfur vapor; the inert gas control unit 232 controls the appropriate pressure and a flow rate to control the output of the inert gas; the gas mixing unit 233 is connected to the vapor generating unit 231 and the inert gas control unit 232 to vaporize the steam generating unit 231 and the inert gas control unit 232 The output inert gas is mixed and output; the mixed gas cracking heating unit 234 is connected to the gas mixing unit 233 to generate a mixed gas of high temperature cracking selenium vapor or sulfur vapor, which is transmitted through a conventional selenium vulcanization process. Separating selenium or sulfur mixed inert gas in place of atmospheric pressure to replace selenization or vulcanization of toxic H ₂ Se or H ₂ S in a vacuum environment to make process operation more safe; and the mixed gas distribution unit 235 The gas cracking heating unit 234 and the second cavity 200 are connected, and the mixed gas is cracked and the gas output by the heating unit 234 is output. Evenly distributed in the second cavity 200, the mixed gas having the pyrolyzed selenium vapor or sulfur vapor is distributed on the glass substrate 1 at a uniform gas flow rate; wherein the mixed gas distribution unit 235 has an opening shape and size It can be determined by CFD calculation analysis so that the gas distribution in the direction of movement of the glass substrate 1 can conform to the process requirements.

Please refer to FIG. 4, which is a schematic diagram of a mixed gas distribution unit in an embodiment of the present invention. The mixed gas distribution unit 235 is formed by combining a circular tube 2351 and a flat plate 2352. The upper end of the round tube 2351 is a main gas The hole 2353 is connected to the mixed gas cracking heating unit 234. The flat plate 2351 is provided with the flat plate 2352. The flat plate 2352 and the lower end of the circular tube 2351 have a plurality of through-hole air holes 2354 for selenium/sulfur vapor and The inert gas mixture is uniformly dispersed on the glass substrate 1 through the through-hole air holes 2354.

Please refer to FIG. 5, which is a functional block diagram of a gas recovery module according to an embodiment of the present invention. The gas recovery module 240 includes a getter unit 241, a condensing unit 242, and a collecting unit 243.

The air suction unit 241 is connected to the second cavity 200 through an air suction passage (not shown) to suck out excess selenium vapor, sulfur vapor and inert gas in the second cavity 200 during the process; The condensing unit 242 is connected to the air suction unit 241, so that the selenium/sulfur vapor and the inert gas sucked by the air suction unit 241 are solidified by condensation, by gas and solid phase. Separating mechanism to separately recover solid selenium/sulfur and inert gas; and collecting unit 243 is connected to the condensing unit 242 to collect separated solid selenium and inert gas for solid selenium and inert gas to be recovered Reuse, which in turn reduces material costs.

Please refer to FIG. 6 , which is a schematic diagram of the combination of the rapid thermal processing device and the selenium vulcanization temperature maintaining device according to an embodiment of the present invention, in order to clearly show the combination relationship between the rapid thermal processing device 10 and the selenium vulcanization temperature maintaining device 20 of the present invention. Only some of the components of the present invention are shown in FIG. 6, and the detailed component configurations can be collectively referred to FIGS. 1 through 5.

Referring to FIG. 6, in an embodiment of the present invention, a cavity is connected through a cavity. a channel 300 for connecting the first cavity 100 to the second cavity 200. The two ends of the cavity connection channel 300 are respectively connected to the second gate 102 and the second cavity of the first cavity 100. The third gate 201 of 200. The cavity connecting channel 300 is provided with a temperature measuring device 301, wherein the temperature measuring device 301 is non-contact. The temperature measuring device 301 can perform an instantaneous temperature measurement on the film on the surface of the glass substrate 1 passing through the cavity connecting passage 300.

In general, the selenium vulcanization process is performed by the following steps: when the first gate 101 of the first cavity 100 is opened, the glass substrate 1 is introduced into the first cavity through the first carrier heating module 110. In body 100. Closing the first to fourth gates 101, 102, 201, and 202; opening a vacuum pumping system (eg, a vacuum pump), and achieving a low degree in the first cavity 100 and the second cavity 200, respectively When the vacuum state (for example, 10 ^-2 torr), the heating system of the first cavity 100 and the second cavity 200 is opened (such as the first carrier heating module 110, the first heating group 120, and FIG. 2 of FIG. 1) The second carrier heating module 210 and the second heating group 220). After the glass substrate 1 is placed on the first carrier heating module 110 in the first cavity 100 of the low vacuum, the first roller heating unit 112 disposed inside the first heating roller 111 is first The heating roller 111 is heated, and at the same time, the first heating group 120, 121 rapidly heats the glass substrate 1, and the first heating group 121 located under the first carrier heating module 110 also simultaneously heats the first heating The roller 111 is heated for the purpose of limiting the temperature difference between the surface temperature of the first heating roller 111 and the glass substrate 1 within a certain range.

At the same time, the heating lamp tube 221 of the second heating group 220 of the second cavity 200 is heated for the equalizing plate 222, and is disposed inside the second heating roller 211 of the second carrier heating module 210. The second roller heating unit 212 heats the second heating rollers 211, and the temperature equalizing plate 222 located under the second carrier heating module 210 also simultaneously serves the second heating roller 211. The temperature difference between the surface temperature of the heating roller 211 and the glass substrate 1 is limited to a certain range.

After the temperature in the first cavity 100 is raised to a specific temperature, the second gate 102 of the first cavity 100 and the third gate 201 of the second cavity 200 are opened, and the first cavity is at this time. The temperature of the first carrying heating module 110, the second carrying heating module 210 of the second cavity 200, the temperature equalizing plate 222 of the glass substrate 1, and the second cavity 200 will be at a certain temperature. Within the scope. Then, the first carrier heating module 110 in the first cavity 100 quickly transports the glass substrate 1 into the second cavity 200 via the cavity connecting channel 300, and the second cavity 200 is The second carrier heating module 210 is received to enable the glass substrate 1 to reciprocate in the cavity of the second cavity 200. After the glass substrate 1 is sent to the cavity of the second cavity 200, the second gate 102 of the first cavity 100 and the third gate 201 of the second cavity 200 are closed, and each forms a sealed space. If the process is a continuous process, the first cavity 100 can also be rapidly heated for another round of the glass substrate 1. The temperature holding selenization process of the second cavity 200, as described above, the selenium/sulfur vapor mixed inert gas controlled by the gas homogenizing module 230 is used to complete the selenium/sulfidation reaction on the glass substrate 1 at a high temperature. To form a CIGS film.

If the process is a multi-stage selenium sulfide reaction process, when the glass substrate 1 completes the first stage of selenization reaction in the second cavity 200, it can be transported back to the first cavity in the above manner. In the 100th, the second stage of the continuous rapid heat treatment operation is performed, and after the temperature reaches the process temperature specified in the second stage, the glass substrate 1 is transported to the second cavity 200 to continue the second stage of the holding process. The temperature selenium sulfide reaction; or, when the first stage selenization reaction is completed, the glass substrate 1 can be transported by the second cavity 200 to other cavities connected to the fourth gate 202 of the second cavity 200. (The figure is not shown, for example, another set of selenium vulcanization process equipment), in order to carry out the rapid heat treatment operation in the subsequent stage and the selenium sulfide reaction.

Therefore, the selenium vulcanization process device of the monolithic glass substrate of the present invention rapidly heats and selenizes/vulcanizes the glass substrate by two cavities, so that on the one hand, the glass substrate can be prevented from being above the softening point for a long time. Temperature and temperature, can also increase the film selenium / vulcanization temperature according to the needs of the process to reduce the temperature of selenium / vulcanization, to achieve energy saving and time saving; by reciprocating the glass substrate back and forth in the cavity The temperature across the glass substrate is more uniform; in addition, the recovered liquid selenium/sulfur and inert gas can be reused, thereby reducing material costs.

The above-described embodiments are merely illustrative of the features and functions of the present invention, and are not intended to limit the scope of the technical scope of the present invention. Anyone skilled in the art can do so without departing from the spirit and scope of the invention. The above embodiments are modified and changed. Therefore, the scope of protection of the present invention should be as set forth in the scope of the claims described below.

1‧‧‧ glass substrate

10‧‧‧Rapid heat treatment unit

100‧‧‧First cavity

110‧‧‧First Carrier Heating Module

20‧‧‧Selenium vulcanization temperature control device

200‧‧‧second cavity

210‧‧‧Second carrier heating module

300‧‧‧ cavity connection

301‧‧‧Temperature measuring device

Claims (14)

A selenium vulcanization process device for a monolithic glass substrate, comprising: a first cavity having a first gate and a second gate, and respectively disposed on two sides of the first cavity not adjacent; The first carrier heating module is disposed in the first cavity and between the first gate and the second gate; a first heating group is disposed in the first cavity and is located at the first a second cavity having a third gate disposed on one side of the second cavity; a second carrier heating module disposed in the second cavity And a second heating group disposed in the second cavity and located on the top side and the bottom side of the second carrier module; a gas uniform module, and the The second cavity is connected to introduce a gas into the second cavity; a gas recovery module is connected to the second cavity to recover the gas in the second cavity; a cavity connecting channel Connected to the first gate of the first cavity and the third gate of the second cavity respectively; and a temperature measuring device is provided Connected to the passage chamber; The gas homogenizing module comprises: a vapor generating unit that generates selenium vapor or sulfur vapor and controls the output of selenium or sulfur vapor by regulating an appropriate pressure; and an inert gas control unit controls the inert gas. An output unit; a gas mixing unit connected to the vapor generating unit and the inert gas control unit to mix and output the vapor generated by the vapor generating unit with the inert gas output by the inert gas control unit; a gas cracking heating unit connected to the gas mixing unit; and a mixed gas distribution unit connected to the gas cracking heating unit and the second chamber, and uniformly distributing the gas outputted by the mixed gas cracking heating unit Distributed in the second cavity. The selenium vulcanization process device of the monolithic glass substrate of claim 1, wherein the first carrier heating module has a plurality of first heating rollers, and each of the first heating rollers is provided with a first Roller heating unit. The selenium vulcanization process equipment for a monolithic glass substrate according to claim 2, wherein the first heating roller is made of graphite, yttria ceramic, zirconia ceramic, quartz or Inconel material. production. The selenium vulcanization process equipment for a monolithic glass substrate according to claim 3, wherein the outer surface of the first heating roller is made of a material coated with a ceramic film. The selenium vulcanization process device for a monolithic glass substrate according to claim 1, wherein the second carrier heating module has a plurality of second heating rolls And a second roller heating unit is disposed in each of the second heating rollers. The selenium vulcanization process equipment for a monolithic glass substrate according to claim 5, wherein the second heating roller is made of graphite, yttria ceramic, zirconia ceramic, quartz or Inconel material. production. The selenium vulcanization process equipment for a monolithic glass substrate according to claim 6, wherein the outer surface of the second heating roller is made of a material coated with a ceramic film. The selenium vulcanization process device of the monolithic glass substrate of claim 1, wherein the gas recovery module comprises: an air suction unit connected to the second cavity through an air suction channel; The gas in the second cavity is sucked out; a condensation unit is connected to the air suction unit to separate the vapor and the inert gas sucked by the air suction unit from each other; and a collecting unit is coupled to the gas The condensing units are connected to collect the separated vapor and inert gas. The selenium vulcanization process apparatus for a monolithic glass substrate according to claim 1, wherein the first heating group comprises a plurality of heating lamps. The selenium vulcanization process apparatus for a monolithic glass substrate according to claim 1, wherein the second heating group comprises a plurality of heating lamps and a plurality of uniform temperature plates. The selenium vulcanization process device for a monolithic glass substrate according to claim 1, further comprising a first heat insulating pad disposed on an inner wall of the first cavity. The selenium vulcanization process device of the monolithic glass substrate according to claim 1, further comprising a second heat insulating pad disposed on the inner wall of the second cavity. The selenium vulcanization process apparatus for a monolithic glass substrate according to claim 1, wherein the temperature measuring device is non-contact type. The selenium vulcanization process device of the monolithic glass substrate according to claim 1, further comprising a fourth gate disposed on the side of the second cavity opposite to the third gate.