TWI598017B - Housing of electronic product and manufacturing method thereof - Google Patents
Housing of electronic product and manufacturing method thereof Download PDFInfo
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- TWI598017B TWI598017B TW104129922A TW104129922A TWI598017B TW I598017 B TWI598017 B TW I598017B TW 104129922 A TW104129922 A TW 104129922A TW 104129922 A TW104129922 A TW 104129922A TW I598017 B TWI598017 B TW I598017B
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- Prior art keywords
- layer
- electronic product
- product casing
- substrate
- lower cover
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- 238000004519 manufacturing process Methods 0.000 title claims description 22
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 125
- 238000007747 plating Methods 0.000 claims description 76
- 229910052751 metal Inorganic materials 0.000 claims description 68
- 239000002184 metal Substances 0.000 claims description 68
- 239000000758 substrate Substances 0.000 claims description 67
- 229910052759 nickel Inorganic materials 0.000 claims description 37
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 30
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 30
- 229910052802 copper Inorganic materials 0.000 claims description 27
- 239000010949 copper Substances 0.000 claims description 27
- 239000000126 substance Substances 0.000 claims description 19
- 229910052763 palladium Inorganic materials 0.000 claims description 16
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 14
- 229910052804 chromium Inorganic materials 0.000 claims description 10
- 239000011651 chromium Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 10
- 239000002245 particle Substances 0.000 claims description 10
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 9
- 238000005516 engineering process Methods 0.000 claims description 9
- 229910052737 gold Inorganic materials 0.000 claims description 9
- 239000010931 gold Substances 0.000 claims description 9
- 229910002058 ternary alloy Inorganic materials 0.000 claims description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
- 239000011135 tin Substances 0.000 claims description 6
- 238000009713 electroplating Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 4
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 3
- 229910001128 Sn alloy Inorganic materials 0.000 claims description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910001297 Zn alloy Inorganic materials 0.000 claims description 3
- 229920000122 acrylonitrile butadiene styrene Polymers 0.000 claims description 3
- 239000004676 acrylonitrile butadiene styrene Substances 0.000 claims description 3
- 238000007772 electroless plating Methods 0.000 claims description 3
- 238000003698 laser cutting Methods 0.000 claims description 3
- 239000011701 zinc Substances 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 2
- 238000009434 installation Methods 0.000 claims 1
- 239000000243 solution Substances 0.000 description 31
- 230000004913 activation Effects 0.000 description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 10
- 239000007788 liquid Substances 0.000 description 9
- 238000007788 roughening Methods 0.000 description 9
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 8
- 239000002198 insoluble material Substances 0.000 description 6
- 229910021626 Tin(II) chloride Inorganic materials 0.000 description 5
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 4
- VEQPNABPJHWNSG-UHFFFAOYSA-N Nickel(2+) Chemical compound [Ni+2] VEQPNABPJHWNSG-UHFFFAOYSA-N 0.000 description 4
- 229910001431 copper ion Inorganic materials 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- -1 gold ions Chemical class 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000006386 neutralization reaction Methods 0.000 description 4
- 229910001453 nickel ion Inorganic materials 0.000 description 4
- 230000003197 catalytic effect Effects 0.000 description 3
- 229910001430 chromium ion Inorganic materials 0.000 description 3
- 239000000084 colloidal system Substances 0.000 description 3
- 238000005034 decoration Methods 0.000 description 3
- 238000005238 degreasing Methods 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- TXUICONDJPYNPY-UHFFFAOYSA-N (1,10,13-trimethyl-3-oxo-4,5,6,7,8,9,11,12,14,15,16,17-dodecahydrocyclopenta[a]phenanthren-17-yl) heptanoate Chemical compound C1CC2CC(=O)C=C(C)C2(C)C2C1C1CCC(OC(=O)CCCCCC)C1(C)CC2 TXUICONDJPYNPY-UHFFFAOYSA-N 0.000 description 2
- QCQCHGYLTSGIGX-GHXANHINSA-N 4-[[(3ar,5ar,5br,7ar,9s,11ar,11br,13as)-5a,5b,8,8,11a-pentamethyl-3a-[(5-methylpyridine-3-carbonyl)amino]-2-oxo-1-propan-2-yl-4,5,6,7,7a,9,10,11,11b,12,13,13a-dodecahydro-3h-cyclopenta[a]chrysen-9-yl]oxy]-2,2-dimethyl-4-oxobutanoic acid Chemical compound N([C@@]12CC[C@@]3(C)[C@]4(C)CC[C@H]5C(C)(C)[C@@H](OC(=O)CC(C)(C)C(O)=O)CC[C@]5(C)[C@H]4CC[C@@H]3C1=C(C(C2)=O)C(C)C)C(=O)C1=CN=CC(C)=C1 QCQCHGYLTSGIGX-GHXANHINSA-N 0.000 description 2
- KWSLGOVYXMQPPX-UHFFFAOYSA-N 5-[3-(trifluoromethyl)phenyl]-2h-tetrazole Chemical compound FC(F)(F)C1=CC=CC(C2=NNN=N2)=C1 KWSLGOVYXMQPPX-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 2
- PTFCDOFLOPIGGS-UHFFFAOYSA-N Zinc dication Chemical compound [Zn+2] PTFCDOFLOPIGGS-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000012190 activator Substances 0.000 description 2
- 239000003638 chemical reducing agent Substances 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 239000012153 distilled water Substances 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- ACVYVLVWPXVTIT-UHFFFAOYSA-M phosphinate Chemical compound [O-][PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-M 0.000 description 2
- 229910001380 potassium hypophosphite Inorganic materials 0.000 description 2
- CRGPNLUFHHUKCM-UHFFFAOYSA-M potassium phosphinate Chemical compound [K+].[O-]P=O CRGPNLUFHHUKCM-UHFFFAOYSA-M 0.000 description 2
- 239000008213 purified water Substances 0.000 description 2
- 229910001379 sodium hypophosphite Inorganic materials 0.000 description 2
- 239000001119 stannous chloride Substances 0.000 description 2
- 235000011150 stannous chloride Nutrition 0.000 description 2
- RCIVOBGSMSSVTR-UHFFFAOYSA-L stannous sulfate Chemical compound [SnH2+2].[O-]S([O-])(=O)=O RCIVOBGSMSSVTR-UHFFFAOYSA-L 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 229910001432 tin ion Inorganic materials 0.000 description 2
- 229910000375 tin(II) sulfate Inorganic materials 0.000 description 2
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- IRAKVRJJLPZVGE-UHFFFAOYSA-L acetic acid;dihydroxy(dioxo)chromium Chemical compound CC(O)=O.O[Cr](O)(=O)=O IRAKVRJJLPZVGE-UHFFFAOYSA-L 0.000 description 1
- 238000001994 activation Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- LJMCIJTZPLTGTD-UHFFFAOYSA-L boric acid dihydroxy(dioxo)chromium nitric acid Chemical compound [N+](=O)(O)[O-].B(O)(O)O.[Cr](=O)(=O)(O)O LJMCIJTZPLTGTD-UHFFFAOYSA-L 0.000 description 1
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- FRLBLFFATGQISB-UHFFFAOYSA-L difluoro(dioxo)chromium Chemical compound F[Cr](F)(=O)=O FRLBLFFATGQISB-UHFFFAOYSA-L 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000000693 micelle Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical group Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 1
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 1
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 1
- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000012279 sodium borohydride Substances 0.000 description 1
- 229910000033 sodium borohydride Inorganic materials 0.000 description 1
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Landscapes
- Chemically Coating (AREA)
- Electroplating Methods And Accessories (AREA)
Description
本發明涉及一種產品殼體,尤其涉及一種電子產品殼體及其製造方法。The invention relates to a product housing, in particular to an electronic product housing and a manufacturing method thereof.
按,當今社會,隨著電子技術的迅速發展,各種電子產品,諸如手持式產品及穿戴式產品等,也隨之不斷地更新換代。相應地,應用於電子產品上的配件,也進行不斷地改進,以迎合電子產品之發展需求。眾所周知,電子產品殼體為電子產品的重要配件之一。一種現有的電子產品殼體包括一基體及一底座。所述基體注塑成型後,再進行電鍍,使金屬鍍層形成於基體表面上。所述基體與底座藉由貼合工藝貼合為一體。According to the current society, with the rapid development of electronic technology, various electronic products, such as hand-held products and wearable products, are constantly being updated. Accordingly, accessories used in electronic products are constantly being improved to meet the development needs of electronic products. As we all know, the electronic product housing is one of the important accessories for electronic products. An existing electronic product housing includes a base body and a base. After the base body is injection molded, electroplating is further performed to form a metal plating layer on the surface of the substrate. The base body and the base are integrally combined by a bonding process.
惟,上述電子產品殼體藉由貼合工藝貼合為一體,以降低防水性能,同時,基體為塑膠材質,金屬鍍層難以形成於基體表面上。因此,電子產品殼體表面具有更差的耐磨性及耐腐蝕性,從而影響電子產品殼體之外觀光澤度。However, the electronic product casing is integrated by the bonding process to reduce the waterproof performance. At the same time, the substrate is made of a plastic material, and the metal plating layer is difficult to form on the surface of the substrate. Therefore, the surface of the electronic product casing has worse wear resistance and corrosion resistance, thereby affecting the appearance gloss of the electronic product casing.
本發明的主要目的係針對上述習知技術存在之缺陷提供一種具有較好的外觀光澤度的電子產品殼體及其製造方法。The main object of the present invention is to provide an electronic product casing having a good appearance gloss and a method of manufacturing the same, in view of the above-mentioned drawbacks of the prior art.
為實現上述目的,本發明提供一種電子產品殼體及一種電子產品殼體的製造方法。所述電子產品殼體包括一基體及一金屬鍍層。所述基體包括一上蓋、一下蓋及一金屬環。所述上蓋與下蓋藉由超高週波技術熔接為一體,並且所述金屬環埋植於上蓋與下蓋之間。所述金屬鍍層形成於基體表面上。所述金屬鍍層包括一形成於該基體表面上的化學鎳層、一形成於化學鎳層上的銅層、一形成於銅層上的奈米鎳層及一形成於奈米鎳層上的表面裝飾層。To achieve the above object, the present invention provides an electronic product housing and a method of manufacturing the electronic product housing. The electronic product housing includes a base body and a metal plating layer. The base body includes an upper cover, a lower cover and a metal ring. The upper cover and the lower cover are welded together by an ultra high frequency technique, and the metal ring is implanted between the upper cover and the lower cover. The metal plating layer is formed on the surface of the substrate. The metal plating layer comprises a chemical nickel layer formed on the surface of the substrate, a copper layer formed on the chemical nickel layer, a nano nickel layer formed on the copper layer, and a surface formed on the nano nickel layer. Decorative layer.
所述電子產品殼體的製造方法係應用於製造電子產品殼體。所述電子產品殼體的製造方法包括如下步驟:將金屬環設置於上蓋與下蓋之間;所述上蓋與下蓋藉由超高週波技術熔接為一體,且將所述金屬環埋植於上蓋與下蓋之間;將金屬鍍層的化學鎳層化學鍍於基體表面上,以使基體金屬化;將金屬鍍層的銅層電鍍於化學鎳層上;將由奈米鎳顆粒形成的金屬鍍層的奈米鎳層電鍍於銅層上;將金屬鍍層的表面裝飾層電鍍於奈米鎳層上;將具有金屬鍍層的基體利用鐳射切割技術切割出至少一安裝孔。The method of manufacturing the electronic product housing is applied to manufacturing an electronic product housing. The manufacturing method of the electronic product casing comprises the steps of: arranging a metal ring between the upper cover and the lower cover; the upper cover and the lower cover are welded together by ultra-high frequency technology, and the metal ring is embedded in the metal ring Between the upper cover and the lower cover; electroless plating of the electroless nickel layer of the metal plating on the surface of the substrate to metallize the substrate; electroplating the copper layer of the metal plating on the electroless nickel layer; and plating the metal layer formed of the nano nickel particles The nano nickel layer is electroplated on the copper layer; the surface decorative layer of the metal plating layer is plated on the nano nickel layer; and the substrate having the metal plating layer is cut into at least one mounting hole by laser cutting technology.
綜上所述,本發明電子產品殼體藉由超高週波技術將上蓋與下蓋熔接為一體,使上蓋與下蓋完全密合,以增強基體之防水性能,同時,所述金屬環埋植於上蓋與下蓋之間,可增強基體之電流導通特性,以使金屬鍍層易於形成於基體表面上。並且,所述金屬鍍層包括由奈米鎳顆粒形成的奈米鎳層,使電子產品殼體的表面更緻密且具有更好的耐磨性及耐腐蝕性,以確保電子產品殼體具有如一體成型之外觀,從而電子產品殼體具有較好的外觀光澤度。In summary, the electronic product casing of the present invention fuses the upper cover and the lower cover into one body by ultra-high frequency technology, so that the upper cover and the lower cover are completely tightly combined to enhance the waterproof performance of the base body, and at the same time, the metal ring is implanted. Between the upper cover and the lower cover, the current conduction characteristics of the substrate can be enhanced, so that the metal plating layer is easily formed on the surface of the substrate. Moreover, the metal plating layer comprises a nano nickel layer formed of nano nickel particles, so that the surface of the electronic product casing is denser and has better wear resistance and corrosion resistance, so as to ensure that the electronic product casing has an integral molding. The appearance of the electronic product housing has a good appearance gloss.
100‧‧‧電子產品殼體
10‧‧‧基體
11‧‧‧上蓋
111‧‧‧第一收容槽
112‧‧‧視窗區
12‧‧‧下蓋
121‧‧‧第二收容槽
122‧‧‧安裝孔
13‧‧‧金屬環
14‧‧‧容置空間
20‧‧‧金屬鍍層
200‧‧‧電子裝置
201‧‧‧按鍵
21‧‧‧化學鎳層
22‧‧‧銅層
23‧‧‧奈米鎳層
24‧‧‧表面裝飾層
30‧‧‧電鍍槽100‧‧‧Electronic product housing 10‧‧‧Base 11‧‧‧Top cover 111‧‧‧First storage trough 112‧‧‧Window area 12‧‧‧Under cover 121‧‧‧Second storage trough 122‧‧‧ Mounting hole 13‧‧‧Metal ring 14‧‧‧Enclosed space 20‧‧‧Metal plating 200‧‧‧Electronic device 201‧‧‧Key 21‧‧‧Chemical nickel layer 22‧‧‧ Copper layer 23‧‧‧ Rice nickel layer 24‧‧‧ surface decorative layer 30‧‧‧ plating bath
第一圖係本發明電子產品殼體之立體圖。
第二圖係第一圖所示電子產品殼體之部份立體分解圖。
第三圖係第一圖所示電子產品殼體之剖視圖。
第四圖係第一圖所示電子產品殼體放置於電鍍槽內之示意圖。
第五圖係第一圖所示電子產品殼體之金屬鍍層形成於基體的示意圖。
第六圖係第一圖所示電子產品殼體應用於一電子裝置之立體圖。
The first figure is a perspective view of the electronic product housing of the present invention.
The second figure is a partial exploded view of the electronic product housing shown in the first figure.
The third figure is a cross-sectional view of the electronic product housing shown in the first figure.
The fourth figure is a schematic view of the electronic product housing shown in the first figure placed in the plating tank.
The fifth figure is a schematic view of the metal plating of the electronic product casing shown in the first figure formed on the substrate.
The sixth figure is a perspective view of the electronic product housing shown in the first figure applied to an electronic device.
為詳細說明本發明之技術內容、構造特徵、所達成的目的及功效,以下茲例舉實施例並配合圖式詳予說明。In order to explain the technical contents, structural features, objects and effects of the present invention in detail, the embodiments are described in detail below with reference to the drawings.
請參閱第一圖及第五圖,本發明電子產品殼體100,包括一基體10及一金屬鍍層20。所述金屬鍍層20形成於基體10表面上。所述金屬鍍層20包括一形成於該基體10表面上的化學鎳層21、一形成於化學鎳層21上的銅層22、一形成於銅層22上的奈米鎳層23及一形成於奈米鎳層23上的表面裝飾層24。Referring to the first and fifth figures, the electronic product housing 100 of the present invention includes a base 10 and a metal plating layer 20. The metal plating layer 20 is formed on the surface of the substrate 10. The metal plating layer 20 includes a chemical nickel layer 21 formed on the surface of the substrate 10, a copper layer 22 formed on the chemical nickel layer 21, a nano nickel layer 23 formed on the copper layer 22, and a layer formed on the copper layer 22. A surface decorative layer 24 on the nano nickel layer 23.
請參閱第一圖、第二圖及第三圖,所述基體10為可進行電鍍的丙烯腈-丁二烯-苯乙烯(Acrylonitrile-Butadiene-Styrene, ABS)塑膠材質。所述基體10包括一上蓋11、一下蓋12及一金屬環13。所述金屬環13為一封閉的銅環。所述上蓋11中部向下貫通開設一第一收容槽111。所述下蓋12中部向上貫通開設一第二收容槽121。所述上蓋11與下蓋12上下相對設置,且第一收容槽111與第二收容槽121相對應形成一容置空間14。所述金屬環13套設於下蓋12周緣上部。所述上蓋11設置於下蓋12上方且蓋合於下蓋12上,使所述金屬環13設置於上蓋11與下蓋12之間。所述上蓋11與下蓋12藉由超高週波技術熔接為一體,使上蓋11與下蓋12完全密合,以增強基體10之防水性能,並且所述金屬環13埋植於上蓋11與下蓋12之間,可增強基體10之電流導通特性。Referring to the first, second and third figures, the substrate 10 is made of electroplated acrylonitrile-butadiene-Styrene (ABS) plastic material. The base 10 includes an upper cover 11, a lower cover 12 and a metal ring 13. The metal ring 13 is a closed copper ring. A first receiving slot 111 is defined in the middle of the upper cover 11 . A second receiving slot 121 is defined in the middle of the lower cover 12 . The upper cover 11 and the lower cover 12 are disposed opposite to each other, and the first receiving slot 111 and the second receiving slot 121 form an accommodating space 14 . The metal ring 13 is sleeved on the upper portion of the periphery of the lower cover 12. The upper cover 11 is disposed above the lower cover 12 and covers the lower cover 12 such that the metal ring 13 is disposed between the upper cover 11 and the lower cover 12. The upper cover 11 and the lower cover 12 are integrally welded by the ultra-high frequency technology, so that the upper cover 11 and the lower cover 12 are completely adhered to enhance the waterproof performance of the base 10, and the metal ring 13 is embedded in the upper cover 11 and the lower cover 12 Between the covers 12, the current conduction characteristics of the substrate 10 can be enhanced.
請參閱第六圖,所述電子產品殼體100可應用於一電子裝置200。所述電子裝置200具有至少一按鍵201。所述電子裝置200可為一手持式產品或一穿戴式產品。所述下蓋12開設有至少一安裝孔122。具體地,所述下蓋12的一側壁開設有兩前後設置的安裝孔122。所述安裝孔122可呈不同的形狀設置。優選地,所述兩安裝孔122分別呈圓形及長方形設置。所述按鍵201設置於安裝孔122內。所述上蓋11設有一用於安裝電子裝置200之屏幕(圖未示)的視窗區112。Referring to the sixth figure, the electronic product housing 100 can be applied to an electronic device 200. The electronic device 200 has at least one button 201. The electronic device 200 can be a handheld product or a wearable product. The lower cover 12 defines at least one mounting hole 122. Specifically, one side wall of the lower cover 12 is provided with two mounting holes 122 disposed in front and rear. The mounting holes 122 may be disposed in different shapes. Preferably, the two mounting holes 122 are respectively disposed in a circular shape and a rectangular shape. The button 201 is disposed in the mounting hole 122. The upper cover 11 is provided with a window area 112 for mounting a screen (not shown) of the electronic device 200.
請參閱第一圖及第五圖,所述化學鎳層21以化學鍍的方式形成於基體10表面上,以使基體10金屬化。具體地,將所述基體10與含有金屬鹽及還原劑的化學鍍鎳液接觸。所述金屬鹽可為金屬的水溶性鹽酸鹽及硫酸鹽中的一種或幾種。所述水溶性鹽酸鹽優選為氯化鎳。所述硫酸鹽優選為硫酸鎳。所述還原劑可為次磷酸鹽及硼氫化物中的一種或幾種。所述次磷酸鹽優選為次磷酸鈉、次磷酸鉀或次磷酸鈉與次磷酸鉀的混合物。所述硼氫化物優選為硼氫化鈉。Referring to the first and fifth figures, the chemical nickel layer 21 is formed on the surface of the substrate 10 by electroless plating to metallize the substrate 10. Specifically, the substrate 10 is brought into contact with an electroless nickel plating solution containing a metal salt and a reducing agent. The metal salt may be one or more of a water-soluble hydrochloride salt and a sulfate salt of a metal. The water-soluble hydrochloride salt is preferably nickel chloride. The sulfate is preferably nickel sulfate. The reducing agent may be one or more of hypophosphite and borohydride. The hypophosphite is preferably a mixture of sodium hypophosphite, potassium hypophosphite or sodium hypophosphite and potassium hypophosphite. The borohydride is preferably sodium borohydride.
請參閱第一圖及第五圖,所述銅層22電鍍於化學鎳層21上。具體地,將具有化學鎳層21的基體10浸在銅鍍液中作為陰極,金屬銅或其他不溶性材料作為陽極,接通直流電源後,銅離子在基體10的化學鎳層21表面被還原形成銅層22。所述銅鍍液為含有銅離子的溶液。Referring to the first and fifth figures, the copper layer 22 is plated on the chemical nickel layer 21. Specifically, the substrate 10 having the chemical nickel layer 21 is immersed in a copper plating solution as a cathode, metallic copper or other insoluble material is used as an anode, and after a direct current power source is turned on, copper ions are reduced on the surface of the chemical nickel layer 21 of the substrate 10. Copper layer 22. The copper plating solution is a solution containing copper ions.
請參閱第一圖、第四圖及第五圖,所述奈米鎳層23電鍍於銅層22上。所述奈米鎳層23由奈米鎳顆粒形成,所述奈米鎳顆粒可以使電子產品殼體100的表面更緻密且使表面具有更好的耐磨性及耐腐蝕性,且所述奈米鎳顆粒的直徑為奈米級。具體地,將具有化學鎳層21及銅層22的基體10放入帶有槽液的電鍍槽30中電鍍,其中,所述具有化學鎳層21及銅層22的基體10作為電鍍槽30的陰極,純鎳靶材作為電鍍槽30的陽極,電鍍槽30內的槽液為含鎳離子的溶液,槽液溫度可為40~80℃,在電鍍過程中,使陽極之純鎳靶材電解成粒徑的鎳離子沉積於陰極之基體10的銅層22的表面,並依序整齊的排列成層狀的奈米鎳層23。所述金屬鍍層20之奈米鎳層23使電子產品殼體100具有如一體成型之外觀。Referring to the first, fourth and fifth figures, the nano nickel layer 23 is electroplated on the copper layer 22. The nano nickel layer 23 is formed of nano nickel particles, which can make the surface of the electronic product casing 100 denser and have better wear resistance and corrosion resistance on the surface, and the nanometer The diameter of the nickel particles is nanometer. Specifically, the substrate 10 having the chemical nickel layer 21 and the copper layer 22 is plated in a plating bath 30 with a bath, wherein the substrate 10 having the chemical nickel layer 21 and the copper layer 22 serves as the plating bath 30. The cathode, the pure nickel target is used as the anode of the plating tank 30, and the bath in the plating tank 30 is a solution containing nickel ions, and the bath temperature can be 40-80 ° C. During the electroplating process, the pure nickel target of the anode is electrolyzed. The sized nickel ions are deposited on the surface of the copper layer 22 of the base 10 of the cathode, and are sequentially arranged in a layered nano nickel layer 23. The nano nickel layer 23 of the metal plating layer 20 provides the electronic product housing 100 with an integrally formed appearance.
請參閱第一圖及第五圖,所述表面裝飾層24電鍍於奈米鎳層23上。所述表面裝飾層24可為一白鉻層、一黑鉻層、一金層、一鈀層、一鎳層或一三元合金層。其中,所述三元合金為銅、錫及鋅的合金。Referring to the first and fifth figures, the surface decoration layer 24 is plated on the nano nickel layer 23. The surface decoration layer 24 may be a white chromium layer, a black chromium layer, a gold layer, a palladium layer, a nickel layer or a ternary alloy layer. Wherein, the ternary alloy is an alloy of copper, tin and zinc.
請參閱第一圖及第五圖,所述白鉻層電鍍於奈米鎳層23上時,將具有奈米鎳層23的基體10浸在白鉻鍍液中作為陰極,不溶性材料可作為陽極,接通直流電源後,鉻離子在基體10的奈米鎳層23表面被還原形成白鉻鍍層。所述白鉻鍍液為含有鉻離子的溶液。Referring to the first and fifth figures, when the white chromium layer is plated on the nano nickel layer 23, the substrate 10 having the nano nickel layer 23 is immersed in a white chromium plating solution as a cathode, and the insoluble material can serve as an anode. After the DC power source is turned on, the chromium ions are reduced on the surface of the nano nickel layer 23 of the substrate 10 to form a white chromium plating layer. The white chromium plating solution is a solution containing chromium ions.
請參閱第一圖及第五圖,所述黑鉻層電鍍於奈米鎳層23上時,將具有奈米鎳層23的基體10浸在黑鉻鍍液中作為陰極,不溶性材料可作為陽極,接通直流電源後,鉻離子等在基體10的奈米鎳層23表面被還原形成黑鉻鍍層。所述黑鉻鍍液可為鉻酸-醋酸型鍍液、鉻酸-氟化物型鍍液或其他類型鍍液。其中,其他類型中的鍍液優選為鉻酸-硝酸鹽-硼酸型鍍液。Referring to the first and fifth figures, when the black chrome layer is plated on the nano nickel layer 23, the substrate 10 having the nano nickel layer 23 is immersed in a black chrome plating solution as a cathode, and the insoluble material can serve as an anode. After the DC power source is turned on, chromium ions or the like are reduced on the surface of the nano nickel layer 23 of the substrate 10 to form a black chrome plating layer. The black chrome plating solution may be a chromic acid-acetic acid type plating solution, a chromic acid-fluoride type plating solution or other types of plating liquid. Among them, the plating solution in other types is preferably a chromic acid-nitrate-boric acid type plating solution.
請參閱第一圖及第五圖,所述金層電鍍於奈米鎳層23上時,將具有奈米鎳層23的基體10浸在金鍍液中作為陰極,不溶性材料可作為陽極,接通直流電源後,一價金離子在基體10的奈米鎳層23表面被還原形成金鍍層。所述金鍍液為含有一價金離子的溶液。Referring to the first and fifth figures, when the gold layer is electroplated on the nano nickel layer 23, the substrate 10 having the nano nickel layer 23 is immersed in a gold plating solution as a cathode, and the insoluble material can be used as an anode. After passing through the DC power source, monovalent gold ions are reduced on the surface of the nano nickel layer 23 of the substrate 10 to form a gold plating layer. The gold plating solution is a solution containing monovalent gold ions.
請參閱第一圖及第五圖,所述鈀層電鍍於奈米鎳層23上時,將具有奈米鎳層23的基體10浸在鈀鍍液中作為陰極,金屬鈦包覆的釕銥合金板可作為陽極,接通直流電源後,鈀離子在基體10的奈米鎳層23表面被還原形成鈀鍍層。所述鈀鍍液可為含鈀離子的溶液。Referring to the first and fifth figures, when the palladium layer is electroplated on the nano nickel layer 23, the substrate 10 having the nano nickel layer 23 is immersed in a palladium plating solution as a cathode, and the metal titanium coated ruthenium The alloy plate can be used as an anode. After the DC power source is turned on, palladium ions are reduced on the surface of the nano nickel layer 23 of the substrate 10 to form a palladium plating layer. The palladium plating solution may be a solution containing palladium ions.
請參閱第一圖及第五圖,所述鎳層電鍍於奈米鎳層23上時,用稀酸活化奈米鎳層23後,將具有奈米鎳層23的基體10浸在鎳鍍液中作為陰極,金屬鎳或不溶性材料可作為陽極,接通直流電源後,鎳離子在基體10的奈米鎳層23表面被還原形成鎳鍍層。所述鎳鍍液可為含鎳離子的溶液。Referring to the first and fifth figures, when the nickel layer is electroplated on the nano nickel layer 23, after the nano nickel layer 23 is activated with a dilute acid, the substrate 10 having the nano nickel layer 23 is immersed in the nickel plating solution. As a cathode, metallic nickel or an insoluble material can be used as an anode. After the direct current power source is turned on, nickel ions are reduced on the surface of the nano nickel layer 23 of the substrate 10 to form a nickel plating layer. The nickel plating solution may be a solution containing nickel ions.
請參閱第一圖及第五圖,所述三元合金層電鍍於奈米鎳層23上時,將具有奈米鎳層23的基體10浸在三元合金鍍液中作為陰極,不溶性材料可作為陽極,接通直流電源後,銅離子、錫離子及鋅離子在基體10的奈米鎳層23表面被還原形成三元合金鍍層。所述三元合金鍍液可為含銅離子、錫離子及鋅離子的溶液。Referring to the first and fifth figures, when the ternary alloy layer is electroplated on the nano nickel layer 23, the substrate 10 having the nano nickel layer 23 is immersed in the ternary alloy plating solution as a cathode, and the insoluble material may be As the anode, after the DC power source is turned on, copper ions, tin ions, and zinc ions are reduced on the surface of the nano nickel layer 23 of the substrate 10 to form a ternary alloy plating layer. The ternary alloy plating solution may be a solution containing copper ions, tin ions, and zinc ions.
所述金屬鍍層20表面可達到2H硬度。所述金屬鍍層20之厚度為25μm。The surface of the metal plating layer 20 can reach a hardness of 2H. The metal plating layer 20 has a thickness of 25 μm.
請參閱第一圖至第六圖,一種電子產品殼體的製造方法,係應用於製造電子產品殼體100,該電子產品殼體的製造方法包括如下步驟:Referring to FIG. 1 to FIG. 6 , a manufacturing method of an electronic product casing is applied to manufacturing an electronic product casing 100. The manufacturing method of the electronic product casing includes the following steps:
將金屬環13設置於上蓋11與下蓋12之間;The metal ring 13 is disposed between the upper cover 11 and the lower cover 12;
所述上蓋11與下蓋12藉由超高週波技術熔接為一體,且將所述金屬環13埋植於上蓋11與下蓋12之間;The upper cover 11 and the lower cover 12 are integrally welded by an ultra-high frequency technology, and the metal ring 13 is embedded between the upper cover 11 and the lower cover 12;
將金屬鍍層20的化學鎳層21化學鍍於基體10表面上,以使基體10金屬化;Electroless nickel layer 21 of metal plating layer 20 is electrolessly plated on the surface of substrate 10 to metallize substrate 10;
將金屬鍍層20的銅層22電鍍於化學鎳層21上;The copper layer 22 of the metal plating layer 20 is electroplated on the chemical nickel layer 21;
將由奈米鎳顆粒形成的金屬鍍層20的奈米鎳層23電鍍於銅層22上;Depositing a nano nickel layer 23 of the metal plating layer 20 formed of nano nickel particles on the copper layer 22;
將金屬鍍層20的表面裝飾層24電鍍於奈米鎳層23上;The surface decoration layer 24 of the metal plating layer 20 is plated on the nano nickel layer 23;
將具有金屬鍍層20的基體10利用鐳射切割技術切割出至少一安裝孔122。The substrate 10 having the metal plating layer 20 is cut into at least one mounting hole 122 by a laser cutting technique.
優選地,在本發明電子產品殼體的製造方法中,在對基體10進行金屬化之前,還包括對基體10的表面進行預處理的步驟。所述預處理包括除油、粗化、中和及活化。Preferably, in the method of manufacturing the electronic product casing of the present invention, before the metallization of the substrate 10, a step of pretreating the surface of the substrate 10 is further included. The pretreatment includes degreasing, roughening, neutralization, and activation.
所述除油係用除油液擦洗基體10表面,以除去基體10表面上的油迹等污垢,保證基體10表面清潔,無油污,從而有利於基體10表面的均勻粗化,並延長隨後粗化步驟中所用粗化液的使用壽命。The degreasing system scrubs the surface of the substrate 10 with a degreasing liquid to remove dirt such as oil traces on the surface of the substrate 10, and ensures that the surface of the substrate 10 is clean and free of oil, thereby facilitating uniform roughening of the surface of the substrate 10, and extending the subsequent coarseness. The service life of the roughening liquid used in the chemical step.
所述粗化的目的係提高基體10表面的親水性,並使基體10表面形成微孔狀,以保證基體10表面形成適當的粗糙度,以保證金屬鍍層20具有良好的結合力。將除油後的基體10浸入粗化液中進行粗化。所述粗化液可為鉻酐及硫酸以適當比例相互作用而形成強腐蝕的鉻酸。粗化溫度可為60~70℃。The purpose of the roughening is to increase the hydrophilicity of the surface of the substrate 10 and to form a microporous surface on the surface of the substrate 10 to ensure proper roughness of the surface of the substrate 10 to ensure good adhesion of the metal plating layer 20. The degreased substrate 10 is immersed in a roughening liquid for roughening. The roughening liquid may be a mixture of chromic anhydride and sulfuric acid in an appropriate ratio to form a strongly corrosive chromic acid. The roughening temperature can be from 60 to 70 °C.
所述中和的作用係爲了去除基體10表面殘留的粗化液,以延長隨後使用的活化液的使用壽命。所述中和可以採用各種酸溶液進行,中和溫度可為室溫。The neutralization function is to remove the coarsening liquid remaining on the surface of the substrate 10 to prolong the service life of the subsequently used activation liquid. The neutralization can be carried out using various acid solutions, and the neutralization temperature can be room temperature.
所述活化係爲了使經過粗化後呈微孔狀的基體10表面能夠均勻吸附活化劑膠體,為隨後的化學鍍鎳提供催化載體。所述活化包括預浸、膠體鈀活化及解膠的步驟,預浸及膠體鈀活化步驟可合併完成。The activation system provides a catalytic support for subsequent electroless nickel plating in order to uniformly adsorb the activator colloid on the surface of the microporous substrate 10 after roughening. The activation includes a pre-dip, a colloidal palladium activation, and a degumming step, and the pre-dip and colloidal palladium activation steps can be combined.
所述預浸是將基體10浸入預浸液中,所述預浸液能除去基體10上的部份雜質,對活化液起到緩衝作用,並防止活化液中的鹽酸被稀釋以後在活化後基體10表面上的膠體直接與基體10表面上的中性水接觸而導致的破壞性水解。所述預浸液可為錫鹽與鹽酸的混合溶液,所述錫鹽可為氯化亞錫、硫酸亞錫或氯化亞錫與硫酸亞錫的混合物。所述預浸溫度可為室溫。The prepreg is immersed in the prepreg, the prepreg can remove some impurities on the substrate 10, buffer the activation liquid, and prevent the hydrochloric acid in the activation solution from being diluted after activation. The destructive hydrolysis caused by the colloid on the surface of the substrate 10 directly contacting the neutral water on the surface of the substrate 10. The prepreg may be a mixed solution of a tin salt and hydrochloric acid, and the tin salt may be stannous chloride, stannous sulfate or a mixture of stannous chloride and stannous sulfate. The prepreg temperature can be room temperature.
所述膠體鈀活化係將預浸後的基體10直接浸入活化液中,所述活化液可為氯化鈀、鹽酸及預浸液中錫鹽的混合溶液。所述活化液的溫度可為35~45℃。The colloidal palladium activation system directly immerses the pre-impregnated substrate 10 into an activation solution, which may be a mixed solution of palladium chloride, hydrochloric acid and a tin salt in the prepreg. The temperature of the activation liquid may be 35 to 45 °C.
吸附在基體10表面的膠體的核心為金屬鈀、外圍為二價錫的粒子團。在水洗時,很容易使二價錫水解成膠狀,把鈀嚴實地裹在裏面而使鈀的催化作用無法體現。因此,所述解膠的目的係為了去除膠團表面殘留的預浸鹽兩價錫,使活化劑鈀暴露出來成為化學鍍鎳的催化活性點。所述解膠溶液一般為鹽酸水溶液,解膠溫度可為35~45℃。The core of the colloid adsorbed on the surface of the substrate 10 is a metal palladium and a cluster of divalent tin. In the case of water washing, it is easy to hydrolyze the divalent tin into a gel, and the palladium is tightly wrapped therein so that the catalytic action of palladium is not reflected. Therefore, the purpose of the degumming is to remove the pre-dip salt bis-valent tin remaining on the surface of the micelle, and expose the activator palladium to become a catalytic active point of electroless nickel plating. The degumming solution is generally an aqueous solution of hydrochloric acid, and the degumming temperature may be 35 to 45 °C.
優選地,在上述每個步驟之後,本發明的電鍍方法還可以包括水洗的步驟,以除去基體10表面殘留的溶液,所述水洗步驟所用的水可為去離子水、蒸餾水、純淨水,或去離子水、蒸餾水及純淨水的混合物。Preferably, after each step described above, the electroplating method of the present invention may further comprise a step of washing to remove a solution remaining on the surface of the substrate 10, the water used in the water washing step may be deionized water, distilled water, purified water, or A mixture of deionized water, distilled water, and purified water.
優選地,在上蓋11與下蓋12熔接為一體之前,可定義出電子裝置200的視窗區112。Preferably, the window region 112 of the electronic device 200 can be defined before the upper cover 11 and the lower cover 12 are welded together.
綜上所述,本發明電子產品殼體100藉由超高週波技術將上蓋11與下蓋12熔接為一體,使上蓋11與下蓋12完全密合,以增強基體10之防水性能,同時,所述金屬環13埋植於上蓋11與下蓋12之間,可增強基體10之電流導通特性,以使金屬鍍層20易於形成於基體10表面上。並且,所述金屬鍍層20包括由奈米鎳顆粒形成的奈米鎳層23,使電子產品殼體100的表面更緻密且具有更好的耐磨性及耐腐蝕性,以確保電子產品殼體100具有如一體成型之外觀,從而電子產品殼體100具有較好的外觀光澤度。In summary, the electronic product casing 100 of the present invention integrally integrates the upper cover 11 and the lower cover 12 by ultra-high frequency technology, so that the upper cover 11 and the lower cover 12 are completely adhered to enhance the waterproof performance of the base 10, and at the same time, The metal ring 13 is embedded between the upper cover 11 and the lower cover 12 to enhance the current conduction characteristics of the substrate 10 so that the metal plating layer 20 is easily formed on the surface of the substrate 10. Moreover, the metal plating layer 20 includes a nano nickel layer 23 formed of nano nickel particles to make the surface of the electronic product casing 100 denser and has better wear resistance and corrosion resistance to ensure the electronic product casing 100. It has an appearance as an integral molding, so that the electronic product casing 100 has a good appearance gloss.
100‧‧‧電子產品殼體 100‧‧‧Electronic housing
20‧‧‧金屬鍍層 20‧‧‧Metal plating
10‧‧‧基體 10‧‧‧ base
22‧‧‧銅層 22‧‧‧ copper layer
21‧‧‧化學鎳層 21‧‧‧Chemical nickel layer
24‧‧‧表面裝飾層 24‧‧‧Surface decorative layer
23‧‧‧奈米鎳層 23‧‧‧Nano nickel layer
Claims (20)
一基體,包括一上蓋、一下蓋及一金屬環,所述上蓋與下蓋藉由超高週波技術熔接為一體,並且所述金屬環埋植於上蓋與下蓋之間;及
一金屬鍍層,形成於基體表面上,所述金屬鍍層包括一形成於該基體表面上的化學鎳層、一形成於化學鎳層上的銅層、一形成於銅層上的奈米鎳層及一形成於奈米鎳層上的表面裝飾層。An electronic product housing comprising:
a substrate comprising an upper cover, a lower cover and a metal ring, wherein the upper cover and the lower cover are integrally welded by an ultra-high frequency technology, and the metal ring is embedded between the upper cover and the lower cover; and a metal plating layer, Formed on the surface of the substrate, the metal plating layer comprises a chemical nickel layer formed on the surface of the substrate, a copper layer formed on the chemical nickel layer, a nano nickel layer formed on the copper layer, and a nano-formed layer formed on the copper layer A decorative layer on the surface of the nickel layer.
將金屬環設置於上蓋與下蓋之間;
所述上蓋與下蓋藉由超高週波技術熔接為一體,且將所述金屬環埋植於上蓋與下蓋之間;
將金屬鍍層的一化學鎳層化學鍍於基體表面上,以使基體金屬化;
將金屬鍍層的一銅層電鍍於化學鎳層上;
將由奈米鎳顆粒形成的金屬鍍層的一奈米鎳層電鍍於銅層上;
將金屬鍍層的一表面裝飾層電鍍於奈米鎳層上;及
將具有金屬鍍層的基體利用鐳射切割技術切割出至少一安裝孔。A method for manufacturing an electronic product casing is used for manufacturing an electronic product casing, the electronic product casing comprising a base body and a metal plating layer formed on the surface of the base body, the base body comprising an upper cover, a lower cover and a metal ring The manufacturing method of the electronic product casing includes the following steps:
Locating a metal ring between the upper cover and the lower cover;
The upper cover and the lower cover are integrally welded by an ultra-high frequency technology, and the metal ring is embedded between the upper cover and the lower cover;
Electrolessly plating a layer of electroless nickel on the metal plating layer on the surface of the substrate to metallize the substrate;
Electroplating a copper layer of the metal plating on the chemical nickel layer;
Depositing a nano nickel layer of a metal plating layer formed of nano nickel particles on the copper layer;
A surface decorative layer of the metal plating layer is plated on the nano nickel layer; and the substrate having the metal plating layer is cut into at least one mounting hole by a laser cutting technique.
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| TW104129922A TWI598017B (en) | 2015-09-10 | 2015-09-10 | Housing of electronic product and manufacturing method thereof |
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| TW104129922A TWI598017B (en) | 2015-09-10 | 2015-09-10 | Housing of electronic product and manufacturing method thereof |
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| TW201711553A TW201711553A (en) | 2017-03-16 |
| TWI598017B true TWI598017B (en) | 2017-09-01 |
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| TW104129922A TWI598017B (en) | 2015-09-10 | 2015-09-10 | Housing of electronic product and manufacturing method thereof |
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| TW201711553A (en) | 2017-03-16 |
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