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TWI593046B - Bonding device and bonding method - Google Patents

Bonding device and bonding method Download PDF

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Publication number
TWI593046B
TWI593046B TW104140754A TW104140754A TWI593046B TW I593046 B TWI593046 B TW I593046B TW 104140754 A TW104140754 A TW 104140754A TW 104140754 A TW104140754 A TW 104140754A TW I593046 B TWI593046 B TW I593046B
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Taiwan
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wafer
chuck
substrate
bonding
head
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TW104140754A
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Chinese (zh)
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TW201633441A (en
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牧浩
中野和男
谷由貴夫
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捷進科技有限公司
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    • H10P72/78
    • H10W72/011
    • H10P72/0608
    • H10P72/3206
    • H10P72/7612
    • H10P74/203
    • H10W70/093
    • H10W72/30
    • H10P72/70
    • H10W72/073
    • H10W72/07331
    • H10W90/732

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Die Bonding (AREA)
  • Wire Bonding (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Description

接合裝置及接合方法 Bonding device and joining method

本發明,是有關接合裝置及接合方法,有關於不需要對於接合所必要的構成構件的隨時間推移變化進行修正的接合裝置及接合方法。 The present invention relates to a joining device and a joining method, and relates to a joining device and a joining method that do not require a change in the time-dependent change of a constituent member required for joining.

在將晶片(半導體晶片)搭載在配線基板和導線架等的基板將封包組裝的過程的一部分,具有從晶圓將晶片吸附並接合在基板的接合過程。 A part of a process of mounting a wafer (semiconductor wafer) on a substrate such as a wiring board and a lead frame, and assembling the package, has a bonding process of adsorbing and bonding the wafer from the wafer to the substrate.

在接合過程中,有必要正確地接合在基板的接合面。但是,基板面是由DAF(晶片固定片)接合的情況時被加熱至80~160℃程度的高溫。且也有來自進行XYZ軸動作的驅動部的發熱和氣氛溫度變化。藉由加熱、驅動部發熱和氣氛溫度變化,構成構件的位置偏離等的隨時間推移變化會發生。但是,由接合頭的構造上的問題,在1台的照相機中,無法同時從正上方看晶片及夾頭的雙方、或是基板及夾頭的雙方。因此,無法將晶片正確地接合在貼裝位置。 During the bonding process, it is necessary to properly bond the bonding faces of the substrate. However, when the substrate surface is joined by a DAF (wafer fixing sheet), it is heated to a high temperature of about 80 to 160 °C. There are also heat generation and temperature changes from the drive unit that performs the XYZ axis operation. The change in the positional deviation of the constituent members or the like due to heating, the heat generation of the driving portion, and the change in the temperature of the atmosphere may occur. However, due to the problem of the structure of the bonding head, in one camera, both the wafer and the chuck, or both the substrate and the chuck cannot be viewed from directly above. Therefore, the wafer cannot be properly bonded to the mounting position.

將上述的隨時間推移變化的問題解決的習知 技術是如專利文獻1。在專利文獻1中揭示,如第11圖所示,為了將晶片及基板同時攝像,將複數照相機21a、21b傾斜並使用具有透明板12和設在透明板的反射膜12p、12q的光學系鏡子構造體,將晶片貼裝在基板的技術。又,第11圖及第11圖的符號是因為專利文獻1的符號,所以具有與本案的實施例及圖面使用的符號重複的情況,兩者並不相同者。 A conventional solution to the above problem of changing over time The technique is as disclosed in Patent Document 1. As disclosed in Patent Document 1, as shown in Fig. 11, in order to simultaneously image a wafer and a substrate, the plurality of cameras 21a and 21b are tilted and an optical mirror having a transparent plate 12 and reflection films 12p and 12q provided on the transparent plate is used. A structure in which a wafer is mounted on a substrate. Further, since the symbols in the eleventh and eleventh drawings are the symbols of Patent Document 1, they have the same meanings as the symbols used in the embodiments and the drawings of the present invention, and the two are not identical.

且雖沒有上述的構成構件的位置偏離等的記載,但是由1台的照相機同時看晶片及基板的技術,是如專利文獻1的習知技術的專利文獻2。在專利文獻2中已揭示,例如將由半反射鏡及垂直鏡所構成的光學系也就是反射體插入晶片及基板之間,從正側面將晶片及基板同時攝像的技術。 In addition, the technique of viewing the wafer and the substrate simultaneously by one camera is not disclosed in Patent Document 2 of the prior art of Patent Document 1. Patent Document 2 discloses that, for example, an optical system including a half mirror and a vertical mirror is a technique in which a reflector is inserted between a wafer and a substrate, and the wafer and the substrate are simultaneously imaged from the front side.

〔習知技術文獻〕 [Practical Technical Literature] 〔專利文獻〕 [Patent Document]

〔專利文獻1〕日本特開2007-103667號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2007-103667

〔專利文獻2〕日本特開2000-244195號公報 [Patent Document 2] Japanese Patent Laid-Open Publication No. 2000-244195

另一方面,藉由最近的封包的小型、薄型化、由晶片的薄型化所產生的晶片對晶片(chip on chip)的積層技術的發達,晶片的接合更嚴苛一位數等級的μm 的定位是必要的。 On the other hand, the development of a chip-on-chip layering technique by miniaturization and thinning of recent packages and chip-to-chip generation due to thinning of wafers is more severe in the bonding of wafers. The positioning is necessary.

專利文獻1揭示的技術,是在傾斜攝像中,藉由構成光學系的透明板和反射膜中的曲折誤差會發生。且,可以將晶片及基板同時攝像是只有如第11圖所示時的狀態,由此,具有無法可必定獲得貼裝位置精度的課題。且,複數照相機是必要。 The technique disclosed in Patent Document 1 occurs in a tilt imaging process by a meandering error in a transparent plate and a reflective film constituting an optical system. Further, since the wafer and the substrate can be simultaneously imaged as shown in Fig. 11, there is a problem that the mounting position accuracy cannot be obtained with certainty. Also, multiple cameras are necessary.

在專利文獻2中,反射體的姿勢會藉由由將光學系也就是反射體往復運動的驅動機構的前述高熱等所產生的隨時間推移變化而變化,所以會具有無法將晶片及基板的位置偏離正確地檢出、無法精度佳地貼裝的課題。 In Patent Document 2, the posture of the reflector changes due to the change in time caused by the high heat or the like of the drive mechanism that reciprocates the optical system, that is, the reflector, so that the position of the wafer and the substrate cannot be performed. Deviation from the problem of correctly detecting and failing to mount accurately.

本發明,是鑑於上述的課題者,提供一種信賴性高的晶片接合機及接合方法,在接合時不被必要的構成構件的隨時間推移變化影響,可以將晶片精度佳地接合。 In view of the above-described problems, the present invention provides a wafer bonding machine and a bonding method having high reliability, and it is possible to bond the wafer with high precision without being affected by changes in the time required for the constituent members at the time of bonding.

本發明,是為了達成上述目的,舉例的話具有以下的特徵。 The present invention has the following features as an example in order to achieve the above object.

本發明的接合裝置,是具備:可以將晶片移動、載置的工具、及將晶片被載置的載置位置從正上方攝像的1台的攝像手段,工具,是具備可以將晶片吸附保持的夾頭,使攝像手段可以辨認將夾頭所保持的晶片及載置位置的雙方的構成的形態。 The bonding apparatus of the present invention includes a tool that can move and mount the wafer, and an imaging device that images the mounting position on which the wafer is placed from above. The tool is provided with a tool that can hold and hold the wafer. The chuck allows the imaging means to recognize the configuration of both the wafer held by the chuck and the placement position.

且本發明的接合方法,是具有:使將晶片吸 附保持的夾頭從大致上方朝載置晶片的載置位置下降的步驟;及由下降的步驟的中途處,藉由位於晶片及載置位置的雙方的正上方的攝像手段從正上方攝像的攝像步驟。 And the bonding method of the present invention has: sucking the wafer a step of lowering the chuck to be held from a substantially upper position toward a mounting position on which the wafer is placed; and a portion of the step of descending from the upper side of the wafer and the mounting position to image from directly above Camera steps.

進一步,本發明的接合方法,是具有:使將晶片吸附保持的夾頭從大致上方朝載置晶片的載置位置下降的步驟;及夾頭將晶片朝載置位置下降之後,藉由位於晶片及載置位置的雙方的正上方的攝像手段從正上方攝像的攝像步驟。 Further, the bonding method of the present invention includes a step of lowering the chuck for holding and holding the wafer from a substantially upper position toward a mounting position on which the wafer is placed, and a step of lowering the wafer toward the mounting position by the chuck And an imaging step of the imaging means directly above the both of the placement positions from the upper side.

且本發明的夾頭,是不存在有在攝像手段及工具所保持的晶片之間的空間阻礙攝像的形態也可以。其一的形態,是包含:藉由使將晶片吸附的夾頭的另一方側位於與可以載置的工具的直線上相異的位置,使可以藉由辨認照相機,將夾頭所具備的晶片觀察的形態。 Further, in the chuck of the present invention, there is no possibility that the space between the imaging means and the wafer held by the tool hinders imaging. In one embodiment, the other side of the chuck that sucks the wafer is positioned at a position different from the line on which the tool can be placed, so that the wafer provided by the chuck can be identified by recognizing the camera. Observed morphology.

進一步,本發明的工具,是進一步具有將夾頭昇降的昇降機構,夾頭,是位於與昇降機構的重心相異的重心的位置也可以。 Further, the tool of the present invention further has a lifting mechanism for lifting and lowering the chuck, and the chuck may be located at a position different from the center of gravity of the center of gravity of the lifting mechanism.

在此夾頭是位於與昇降機構的重心相異的重心的位置,是指包含:藉由位於昇降機構的夾頭,使夾頭位於與昇降機構的重心的位置相異的位置。其一的形態,是可舉例曲柄的形態。即,沿著曲柄的一方的直線具有昇降機構情況時,沿著該曲柄的另一方的直線具備夾頭的案例。在此,將曲柄的中央的長度縮短也可以。即,曲柄中的入口的直線及出口的直線是平行且不會交叉的關係即可。 The position where the chuck is located at a center of gravity different from the center of gravity of the lifting mechanism means that the chuck is located at a position different from the position of the center of gravity of the lifting mechanism by the chuck located in the lifting mechanism. The form of one is a form in which a crank can be exemplified. In other words, when one of the straight lines along the crank has an elevating mechanism, the other straight line along the crank is provided with a collet. Here, the length of the center of the crank may be shortened. That is, the straight line of the entrance in the crank and the straight line of the exit are parallel and do not cross each other.

且本發明的工具,是位於從將夾頭昇降的側部分離的位置上的夾頭也可以。 Further, the tool of the present invention may be a chuck located at a position separated from a side portion where the chuck is lifted and lowered.

進一步,本發明的工具,是將晶片假壓合在載置位置也就是貼裝位置的接合頭,進一步具有將被假壓合的晶片正式壓合的正式壓合頭也可以。 Further, the tool of the present invention may be a bonding head in which a wafer is pseudo-compressed at a mounting position, that is, a mounting position, and may further have a final pressing head for positively pressing a wafer that is falsely pressed.

且本發明,是夾頭,是將被吸附在夾頭的晶片載置在載置位置時,使攝像手段可以將晶片的一邊攝像也可以。 Further, according to the present invention, when the wafer to be adsorbed on the chuck is placed on the placement position, the imaging means can capture the side of the wafer.

進一步,本發明,是夾頭,是將被吸附在夾頭的晶片載置在載置位置時,攝像手段是可以將包含晶片的2個角部的相對的2邊攝像也可以。 Further, in the present invention, when the wafer to be adsorbed on the chuck is placed on the placement position, the image pickup means may image the two opposite sides including the two corner portions of the wafer.

且本發明的工具,是具有由與載置的位置平行的面內將夾頭繞轉的夾頭繞轉手段也可以。 Further, the tool of the present invention may have a chuck winding means for rotating the chuck in a plane parallel to the position to be placed.

進一步,本發明,是具有:依據藉由攝像步驟獲得的畫像,藉由控制裝置修正對於應載置晶片的位置將晶片吸附保持的夾頭的位置,在規定的應載置的場所載置晶片的步驟也可以。 Further, according to the present invention, the image of the chuck that is sucked and held by the position of the wafer to be placed is corrected by the control device according to the image obtained by the image capturing step, and the wafer is placed in a predetermined place to be placed. The steps are also ok.

且本發明的移動的步驟,是藉由具備將夾頭昇降的昇降機構的工具被移動的步驟,由位於與昇降機構的重心相異的重心的位置的夾頭將晶片吸附也可以。 Further, in the moving step of the present invention, the tool is moved by a tool having a lifting mechanism for raising and lowering the chuck, and the wafer may be adsorbed by a chuck located at a position different from the center of gravity of the lifting mechanism.

進一步,本發明的下降的步驟是由將晶片假壓合於載置位置也就是貼裝位置的接合頭所產生的下降的步驟,進一步具有:將被假壓合的晶片藉由正式壓合的正式壓合頭接合的步驟也可以。 Further, the step of lowering the present invention is a step of lowering the wafer by a bonding head which is falsely pressed to the mounting position, that is, the mounting position, and further has a method of positively pressing the wafer to be falsely pressed. The step of joining the formal press head is also possible.

且本發明的下降的步驟中的攝像步驟,是將晶片的一邊攝像的步驟也可以。 Further, the imaging step in the step of descending the present invention may be a step of imaging one side of the wafer.

進一步,本發明的下降的步驟中的攝像步驟,是將包含晶片的2個角部的相對的2邊攝像的步驟也可以。 Further, the imaging step in the step of descending in the present invention may be a step of imaging the two opposite sides including the two corners of the wafer.

且本發明的工具,是具有由與載置位置平行的面內將夾頭繞轉的夾頭繞轉手段也可以。 Further, the tool of the present invention may have a chuck winding means for rotating the chuck in a plane parallel to the placement position.

依據本發明的話,可以提供一種信賴性高的晶片接合機及接合方法,在接合時不被必要的構成構件的隨時間推移變化影響,可以將晶片精度佳地接合。 According to the present invention, it is possible to provide a wafer bonding machine and a bonding method having high reliability, and it is possible to bond the wafer with high precision without being affected by changes in the necessary constituent members over time during bonding.

11‧‧‧晶片辨認照相機 11‧‧‧ wafer identification camera

12‧‧‧供給載台 12‧‧‧Supply stage

13‧‧‧拾取頭 13‧‧‧ pick up head

13c‧‧‧夾頭 13c‧‧‧ chuck

13m‧‧‧昇降部 13m‧‧‧ Lifting Department

21‧‧‧中間載台照相機 21‧‧‧Intermediate stage camera

22‧‧‧中間載台 22‧‧‧Intermediate stage

23‧‧‧假壓合頭 23‧‧‧ False press head

23a‧‧‧伸縮致動器 23a‧‧‧ Telescopic actuator

23b‧‧‧繞轉軸棒 23b‧‧‧Rolling shaft

23c‧‧‧夾頭 23c‧‧‧ chuck

23d‧‧‧分離部 23d‧‧‧Separation Department

23p‧‧‧驅動桿 23p‧‧‧Driver

23s‧‧‧夾頭保持部 23s‧‧‧Chuck Holder

23w‧‧‧假壓合頭的本體側部 23w‧‧‧The side of the body of the false press head

23k‧‧‧吸引纜線 23k‧‧‧Attraction cable

23E‧‧‧昇降驅動軸 23E‧‧‧ Lifting drive shaft

23H‧‧‧假壓合頭的本體 23H‧‧‧The body of the false press head

23T‧‧‧夾頭繞轉機構 23T‧‧‧ Chuck revolving mechanism

25‧‧‧繞轉驅動裝置 25‧‧‧Rolling drive

31‧‧‧壓合照相機 31‧‧‧ Pressing camera

32‧‧‧安裝載台 32‧‧‧Installation stage

33‧‧‧正式壓合頭 33‧‧‧Formal compression head

33c‧‧‧夾頭 33c‧‧‧ chuck

34‧‧‧加熱裝置 34‧‧‧ heating device

41‧‧‧下視照相機 41‧‧‧Lower camera

100‧‧‧晶片接合機 100‧‧‧ wafer bonding machine

D‧‧‧晶片(半導體晶片) D‧‧‧ wafer (semiconductor wafer)

L‧‧‧分離距離 L‧‧‧Separation distance

P‧‧‧基板 P‧‧‧Substrate

Pm‧‧‧基板記號 Pm‧‧‧ substrate mark

W‧‧‧晶圓 W‧‧‧ wafer

θ d‧‧‧晶片的傾斜 θ d‧‧‧ wafer tilt

θ p‧‧‧基板的傾斜 θ p‧‧‧ tilt of the substrate

〔第1圖〕本發明最佳的晶片接合機的一實施例的主要部分的概略側面圖。 [Fig. 1] A schematic side view showing a main part of an embodiment of a preferred wafer bonding machine of the present invention.

〔第2圖〕顯示從晶圓將晶片拾取的拾取頭的一實施例的概略圖。 [Fig. 2] A schematic view showing an embodiment of a pickup head for picking up a wafer from a wafer.

〔第3圖〕顯示將晶片正式壓合在基板的正式壓合頭的一實施例的概略圖。 [Fig. 3] A schematic view showing an embodiment of a final press-fit head for integrally pressing a wafer onto a substrate.

〔第4圖〕顯示從中間載台將晶片拾取,在基板或是已貼裝完成的晶片將新的晶片假壓合的本發明的假壓合頭的一實施例的構造圖。 [Fig. 4] is a structural view showing an embodiment of the pseudo-compression head of the present invention in which a wafer is picked up from an intermediate stage, and a new wafer is pseudo-compressed on a substrate or a wafer which has been mounted.

〔第5圖〕顯示本發明的假壓合頭的夾頭的其他實施 例的圖。 [Fig. 5] shows another embodiment of the collet of the false press head of the present invention Example of the example.

〔第6圖〕顯示本發明的假壓合頭的動作流程的圖。 [Fig. 6] A view showing an operational flow of the pseudo pressure combining head of the present invention.

〔第7圖〕(a)是載台上的晶片的繞轉偏離的意示圖,(b)是在安裝載台32上的基板的繞轉偏離的意示圖。 [Fig. 7] (a) is an intentional view of the wrap of the wafer on the stage, and (b) is a view showing the deviation of the wrap of the substrate on the mounting stage 32.

〔第8圖〕說明本發明的晶片接合機整體的一連的處理的前半的圖。 [Fig. 8] A diagram showing the first half of the process of the entire wafer bonding machine of the present invention.

〔第9圖〕說明本發明的晶片接合機整體的一連的處理的後半的圖。 [Fig. 9] A view showing the second half of the process of the entire wafer bonding machine of the present invention.

〔第10圖〕顯示本發明的夾頭繞轉機構的一例的圖。 [Fig. 10] A view showing an example of the chuck revolving mechanism of the present invention.

〔第11圖〕顯示習知技術的圖。 [Fig. 11] shows a diagram of a conventional technique.

在以下將本發明的一實施例使用圖面等說明。又,以下的說明,只是說明本發明的一實施例用者,不是限制本案發明的範圍者。因此,本行業者可採用將這些的各要素或是全要素均等置換的實施例,這些的實施例也被包含於本案發明的範圍。 Hereinafter, an embodiment of the present invention will be described using a drawing or the like. Further, the following description is only intended to illustrate the use of an embodiment of the present invention, and is not intended to limit the scope of the invention. Therefore, those skilled in the art can adopt embodiments in which these elements or all elements are equally replaced, and these embodiments are also included in the scope of the present invention.

又,在本書中,在各圖的說明中,對於具有共通的功能的構成要素是附加同一的參照編號,儘可能避免說明的重複。 Further, in the description of the drawings, the same reference numerals are attached to the components having the common functions, and the repetition of the description is avoided as much as possible.

第1圖,是本發明最佳的晶片接合機的第1實施例的主要部分的概略側面圖。本晶片接合機100,是 從供給載台12將晶片D拾取,一旦載置在中間載台22,且,再度從中間載台22拾取,由將接合作業用的安裝載台32載置並假壓合(接合),其後進行正式壓合,貼裝在基板P的裝置。 Fig. 1 is a schematic side view showing a main part of a first embodiment of a preferred wafer bonding machine of the present invention. The wafer bonding machine 100 is The wafer D is picked up from the supply stage 12, once placed on the intermediate stage 22, and picked up again from the intermediate stage 22, and placed on the mounting stage 32 for bonding work, and falsely pressed (joined). After the final press-fitting, the device is mounted on the substrate P.

晶片接合機100,是後述的構成之外,具有以下的3個構成及控制裝置50。第1,設在中間載台22及安裝載台32之間的下視照相機41,在後述的假壓合頭23移動中將吸附的晶片D的狀態從正下方觀察。第2,設在安裝載台32的加熱裝置34,藉由加熱使假壓合和正式壓合容易。第3,將中間載台22由與貼裝面平行的面繞轉的繞轉驅動裝置25,可修正貼裝的晶片D的姿勢。控制裝置50,是具有:無圖示的CPU(中央處理器、Central processor unit)、控制程式存儲的ROM(唯讀記憶體、Read only memory)和資料存儲的RAM(動態隨機存取記憶體、Random access memory)、控制匯流排等,將構成晶片接合機100的各要素控制,進行以下所述的貼裝控制。又,本發明中的姿勢,是顯示由位置及旋轉角被規定的姿勢。 The wafer bonding machine 100 has the following three configurations and control devices 50 in addition to the configuration described later. First, the lower view camera 41 provided between the intermediate stage 22 and the mounting stage 32 observes the state of the wafer D adsorbed from the lower side in the movement of the dummy nip head 23 to be described later. Secondly, it is provided in the heating device 34 of the mounting stage 32, and it is easy to perform false pressing and final pressing by heating. Thirdly, the posture of the wafer D to be mounted can be corrected by the revolving drive device 25 that rotates the intermediate stage 22 by a surface parallel to the mounting surface. The control device 50 includes a CPU (central processor, central processor unit) not shown, a ROM (read only memory) stored in a control program, and a RAM for data storage (dynamic random access memory, The random access memory, the control bus, and the like control the elements constituting the wafer bonding machine 100, and perform the placement control described below. Further, the posture in the present invention is a posture in which the position and the rotation angle are defined.

首先,說明第2圖所示的拾取頭13的構造及由其所產生的處理。第2圖(a)是拾取頭13的側面圖,第2圖(b)是將昇降部13m等去除將拾取頭13(夾頭13c)從上所見的圖,晶片D因為是從上看不見所以由虛線顯示。拾取頭13,是從供給載台12的晶圓W將晶片D拾取,在由第1圖所示的一點鎖線顯示的路徑移動,將晶 片D載置在中間載台22。拾取頭13,是藉由沿著本體13H的導軌13g昇降的昇降部13m等,無法從正上方看見夾頭13c。因此,預先由晶片辨認照相機11,將拾取的晶片D(半導體晶片)從正上方攝像,檢出晶片D的姿勢,依據其檢出結果,將拾取頭13的姿勢修正,將晶片D拾取,由該姿勢將晶片D載置在中間載台22。夾頭13c,是為了藉由吸附孔將晶片D吸附剝離,而將晶片D整體吸附保持。尤其是,為了容易將成為例如厚度20μm的波狀晶片安定地拾取,將晶片整體吸附保持較佳。 First, the structure of the pickup head 13 shown in Fig. 2 and the processing generated thereby will be described. Fig. 2(a) is a side view of the pickup head 13, and Fig. 2(b) is a view showing the lift head 13m and the like removed from the pickup head 13 (the chuck 13c), and the wafer D is invisible from above. So it is shown by the dotted line. The pickup head 13 picks up the wafer D from the wafer W of the supply stage 12, and moves it on the path indicated by the one-point lock line shown in FIG. The sheet D is placed on the intermediate stage 22. The pickup head 13 is a lifting portion 13m that is raised and lowered along the guide rail 13g of the main body 13H, and the chuck 13c cannot be seen from directly above. Therefore, the camera 11 is recognized in advance by the wafer, and the picked-up wafer D (semiconductor wafer) is imaged from directly above, and the posture of the wafer D is detected. Based on the detection result, the posture of the pickup head 13 is corrected, and the wafer D is picked up. This posture places the wafer D on the intermediate stage 22. The chuck 13c is for adsorbing and detaching the wafer D by the adsorption holes, and the wafer D as a whole is adsorbed and held. In particular, in order to easily pick up a corrugated wafer having a thickness of, for example, 20 μm, the entire wafer is preferably adsorbed and held.

接著,在說明具有本發明的特徵的第4圖所示的假壓合頭23之前,說明第3圖所示的正式壓合頭33的構造及由其所產生的正式壓合處理。第3圖(a)是正式壓合頭33的側面圖,第3圖(b)是將昇降部33m等去除將正式壓合頭33(夾頭33c)從上所見的圖,因為晶片D是從上看不見所以由虛線顯示。假壓合頭23,是假壓合在被安裝載台32上或是已經貼裝的晶片上,朝向中間載台22移動。其後,正式壓合頭33是由第1圖所示的虛線顯示的路徑朝被假壓合的晶片D的位置移動,下降並由夾頭33c正式壓合。如第3圖(b)所示,夾頭33c的壓合面積,因為是比晶片D的被壓合面積更充分寬地被設置,所以正式壓合頭33的定位精度即使不嚴格也可以,且不需要修正姿勢。且,包含夾頭33c,在正式壓合頭33不需要設置吸附機構。又,符號33H,是顯示正式壓合頭的本體,符號33g,是顯示設在本體33H的導軌,33m是 顯示被固定於本體33H的導軌33g移動的昇降部。 Next, before describing the dummy press-fit head 23 shown in Fig. 4 having the features of the present invention, the structure of the main press-fit head 33 shown in Fig. 3 and the final press-fitting process generated therefrom will be described. Fig. 3(a) is a side view of the main press-fit head 33, and Fig. 3(b) is a view showing the lifter 33m and the like removed from the upper press-fit head 33 (the chuck 33c), since the wafer D is It is not visible from the top and is shown by the dotted line. The dummy press head 23 is pseudo-compressed on the mounted stage 32 or on the wafer that has been mounted, and is moved toward the intermediate stage 22. Thereafter, the main press-fit head 33 is moved by the path indicated by the broken line shown in FIG. 1 toward the position of the pseudo-compressed wafer D, and is lowered by the chuck 33c. As shown in FIG. 3(b), since the pressing area of the chuck 33c is set to be sufficiently wider than the pressed area of the wafer D, the positioning accuracy of the final pressing head 33 can be made even if it is not strict. There is no need to correct the posture. Further, the chuck 33c is included, and it is not necessary to provide an adsorption mechanism in the main press head 33. Further, reference numeral 33H denotes a main body of the main press-fit head, and reference numeral 33g denotes a guide rail provided on the main body 33H, and 33m is A lifting portion that is fixed to the guide rail 33g of the main body 33H is displayed.

正式壓合頭33是從正式壓合的晶片D的位置移動之後,將正式壓合的晶片D的狀態由壓合照相機31攝像、檢查。晶片D的破裂等的異常發生的情況時,其後不進行積層處理而朝下一個基板P的處理進行。又,在檢查時將照相機與壓合照相機31另外設置也可以。且,在第1圖中,因為在一個基板P的3處的位置將晶片D一邊徧離一邊積層貼裝,所以後述的假壓合頭23,是移動至安裝載台32的右端為止,依序貼裝於3處。又,正式壓合頭33的右端的移動位置,是假壓合頭23將右端的基板P假壓合時的退避位置。 After the main press-fit head 33 is moved from the position of the wafer D which is formally pressed, the state of the wafer D which is formally pressed is imaged and inspected by the press-fit camera 31. When an abnormality such as cracking of the wafer D occurs, the subsequent processing of the next substrate P is performed without performing the lamination processing. Further, the camera and the press-fit camera 31 may be separately provided during the inspection. In addition, in the first figure, since the wafer D is stacked one on another at three positions of one substrate P, the dummy nip head 23 to be described later moves to the right end of the mounting stage 32. The order is placed in 3 places. Further, the moving position of the right end of the main press-fit head 33 is a retracted position when the pseudo-compression head 23 falsely presses the substrate P at the right end.

接著,說明具有本發明的特徵的第4圖所示的接合頭也就是假壓合頭23的構造及由其所產生的處理。第4圖(a),是顯示將夾頭23c昇降的昇降驅動軸23E的構造的圖。第4圖(b),是在第4圖(a)中,將夾頭23c及夾頭保持部23s從箭頭A側所見的圖。第4圖(c),是從中間載台22將晶片D拾取時將該晶片D及夾頭23c由辨認照相機從正上方攝像的圖。在第4圖(c)中,可以辨認晶片D的左右2邊。 Next, the structure of the joint head shown in Fig. 4 having the feature of the present invention, that is, the pseudo-nip head 23, and the process generated therefrom will be described. Fig. 4(a) is a view showing the structure of the elevation drive shaft 23E that raises and lowers the chuck 23c. Fig. 4(b) is a view of the chuck 23c and the chuck holding portion 23s as seen from the arrow A side in Fig. 4(a). Fig. 4(c) is a view in which the wafer D and the chuck 23c are imaged from above by the recognition camera when the wafer D is picked up from the intermediate stage 22. In Fig. 4(c), the left and right sides of the wafer D can be identified.

假壓合頭23,是具有:本體23H、及將夾頭23c昇降的昇降驅動軸23E,本體23H,具有:將頭整體朝第1圖所示的基板P的搬運方向(X方向)移動的X驅動軸(無圖示)、及朝將與搬運方向(X方向)垂直交叉的中間載台22及安裝載台32間連結的Y方向移動的Y 驅動軸(無圖示)。假壓合頭23,未具有修正晶片D的XY平面中的旋轉角也就是傾斜的繞轉軸。該傾斜的修正,是藉由中間載台22的繞轉進行。在本實施例中,藉由假壓合頭23不具有繞轉軸,就可以達成假壓合在基板P時的控制的簡略化。 The squeezing head 23 includes a main body 23H and an elevating drive shaft 23E that elevates and lowers the chuck 23c. The main body 23H has a head unit that moves toward the conveyance direction (X direction) of the substrate P shown in FIG. Y drive shaft (not shown) and Y moving in the Y direction connecting the intermediate stage 22 and the mounting stage 32 which are perpendicular to the conveyance direction (X direction) Drive shaft (not shown). The false press head 23 does not have a rotation angle in the XY plane of the correction wafer D, that is, an inclined rotation axis. The correction of the tilt is performed by the winding of the intermediate stage 22. In the present embodiment, the simplification of the control when the pseudo-compression head 23 does not have the winding axis can be achieved when the substrate P is falsely pressed.

昇降驅動軸23E,是沿著設在假壓合頭23的本體23H的側部23w的導軌23g昇降。昇降驅動軸23E,是具有:設在其先端,具有將晶片D吸附的吸附孔的夾頭23c;及將夾頭23c保持的夾頭保持部23s;及在被固定於本體23H的導軌23g上移動的昇降部23m;及從將夾頭23c的昇降部23m昇降的側部23w只有分離距離L地偏移的L字狀的分離部23d。在夾頭23c及夾頭保持部23s中,為了將晶片D吸附,具有透過吸引纜線23k與無圖示的吸引裝置連通的吸附孔。又,在本實施例中,由分離部23d及夾頭保持部23s形成的形狀,雖是具有使假壓合力最佳傳達的如曲柄的形狀,但是不一定必要限定於前述形狀。重要的是將夾頭23c只有規定的分離距離L分離即可。 The lift drive shaft 23E moves up and down along the guide rail 23g provided on the side portion 23w of the main body 23H of the dummy press head 23. The lift drive shaft 23E has a chuck 23c provided at its tip end and having an adsorption hole for sucking the wafer D, and a chuck holding portion 23s for holding the chuck 23c; and a guide 23g fixed to the body 23H. The moving lifting portion 23m; and the L-shaped separating portion 23d that is separated from the side portion 23w that raises and lowers the lifting portion 23m of the chuck 23c by only the separation distance L. In the chuck 23c and the chuck holding portion 23s, in order to adsorb the wafer D, there is an adsorption hole that communicates with the suction device (not shown) through the suction cable 23k. Further, in the present embodiment, the shape formed by the separating portion 23d and the chuck holding portion 23s has a shape such as a crank that optimally transmits the false pressing force, but is not necessarily limited to the above shape. It is important that the chuck 23c is separated only by the predetermined separation distance L.

分離距離L,是例如可舉例,由假壓合頭23從中間載台22將晶片D拾取時,可迴避成為障礙物的假壓合頭23的構造物,可以由被固定於中間載台22的正上方的中間載台照相機21將晶片D及夾頭23c的雙方同時攝像的距離。且,此分離距離L,是由假壓合頭23將新的晶片D假壓合在安裝載台32上的基板P或是已貼裝完 成的晶片D上時,可迴避成為障礙物的假壓合頭23的構造物,由朝假壓合(貼裝)位置移動來的壓合照相機31,可以將基板P或是已貼裝完成的晶片D及新的晶片D(夾頭23c)同時攝像的距離也可以。又,每次朝安裝載台32上被搬運的基板P是一個時,壓合照相機31被固定。例如,障礙物,具體而言如昇降部和導軌。假壓合頭23,是具有與第2圖所示的拾取頭11同樣的構造,但是夾頭23c是如第2圖所示與側部23w密合的話,中間載台照相機21及壓合照相機31的視野是藉由昇降部23m和導軌23g被遮蔽。 The separation distance L is, for example, a structure in which the pseudo-compression head 23 can be avoided when the wafer D is picked up from the intermediate stage 22 by the pseudo-compression head 23, and can be fixed to the intermediate stage 22 by the intermediate stage 22 The intermediate stage camera 21 directly above is the distance at which both the wafer D and the chuck 23c are simultaneously imaged. Moreover, the separation distance L is a substrate P which is pseudo-compressed by the dummy pressing head 23 on the mounting stage 32 or has been mounted. In the case of the wafer D, the structure of the pseudo-compression head 23 which is an obstacle can be avoided, and the press-fit camera 31 which is moved toward the pseudo-pressing (mounting) position can complete the substrate P or has been mounted. The distance between the wafer D and the new wafer D (the chuck 23c) can be simultaneously captured. Further, each time the substrate P transported onto the mounting stage 32 is one, the press-fit camera 31 is fixed. For example, obstacles, such as lifts and rails. The false press head 23 has the same structure as the pick-up head 11 shown in Fig. 2, but the intermediate head camera 21 and the press camera are attached to the side portion 23w as shown in Fig. 2 The field of view of 31 is shielded by the lifting portion 23m and the guide rail 23g.

且夾頭23c,是將晶片D吸附時,中間載台照相機21或是壓合照相機31(辨認照相機、攝像手段)是具有從正上方朝向下方看時可以辨認晶片D對於夾頭23c的位置的姿勢的構造。可以辨認的構造,是指將晶片D吸附保持的夾頭23時,從正上方看可以讓晶片D的至少一邊進入辨認照相機的視野的構造。前述可以辨認的構造,是指辨認照相機從晶片的正上方朝向下方見時,從夾頭23c露出的晶片D的部分,是將晶片D吸附保持的夾頭23從正上方看時,可以讓晶片D的2邊以上進入辨認照相機視野的構造較佳。例如,在第4圖(c)中,成為晶片D的相對短邊的2邊可被看到的尺寸。其他,例如具有,如第5圖(a)、第5圖(b)所示,晶片D的2至4角可被看到的構造,或是如第5圖(c)所示,晶片D的4邊可被看到的構造等。且,夾頭保持部23s及夾頭23c 的剖面形狀是相同的情況,使與晶片D的關係明白的方式,將相對的2邊比夾頭23c大且比晶片D的長邊短的平板設在夾頭23c的上部,將上述角色取代夾頭23c地進行也可以。 In the chuck 23c, when the wafer D is sucked, the intermediate stage camera 21 or the press camera 31 (the camera or the imaging means) can recognize the position of the wafer D with respect to the chuck 23c when viewed from directly above. The construction of the posture. The identifiable structure refers to a structure in which at least one side of the wafer D enters the field of view of the camera when viewed from the upper side when the chuck 23 is held by the wafer D. The identifiable structure refers to a portion of the wafer D exposed from the chuck 23c when the camera is seen from the upper side of the wafer toward the lower side, and the wafer 23 that is held by the wafer D is viewed from above. A configuration in which two or more sides of D enter the field of view of the camera is preferred. For example, in Fig. 4(c), the two sides of the relatively short side of the wafer D can be seen. Others, for example, have a configuration in which the 2 to 4 corners of the wafer D can be seen as shown in FIGS. 5(a) and 5(b), or as shown in FIG. 5(c), the wafer D The four sides can be seen in the structure and so on. Moreover, the chuck holding portion 23s and the chuck 23c In the case where the cross-sectional shape is the same, the relationship between the wafer D and the wafer D is made clear, and a flat plate having two sides larger than the chuck 23c and shorter than the long side of the wafer D is provided on the upper portion of the chuck 23c, and the above character is replaced. It is also possible to perform the chuck 23c.

夾頭保持部23s及分離部23d,是將晶片D吸附時,從正上方看時具有晶片D對於夾頭23c的姿勢辨認不會成為障礙的尺寸。例如,夾頭保持部23s及分離部23d的夾頭平行的剖面積的縱橫的尺寸,是將夾頭23c從上看時比縱橫的尺寸小。 When the wafer D is adsorbed, the chuck holding portion 23s and the separation portion 23d have a size in which the wafer D does not become obstructed by the posture recognition of the chuck 23c when viewed from directly above. For example, the vertical and horizontal dimensions of the cross-sectional area of the collet holding portion 23s and the separation portion 23d in parallel with each other are smaller than the vertical and horizontal dimensions when the chuck 23c is viewed from above.

接著,由假壓合頭23從中間載台22將晶片D拾取,為了假壓合在安裝載台32上必要的動作流程使用第6圖說明。 Next, the wafer D is picked up from the intermediate stage 22 by the dummy nip head 23, and the operation flow necessary for the dummy pressing on the mounting stage 32 will be described using FIG.

首先,在第1圖中,基板P被搬運至安裝載台32上時,如第7圖(a)所意示,將基準記號所示的基板P上的晶片D的貼裝位置、及貼裝位置或是貼裝位置上的夾頭23c,由1台的壓合照相機31從正上方同時攝像,檢出基板P對於夾頭的旋轉角也就是傾斜θ p(步驟S1)。又,由第7圖(b)顯示的角部記號只是基板記號Pm的一例,可顯示基板P上的晶片D的載置位置即可。如第7圖(b)所意示,將假壓合頭23朝被載置於中間載台22的晶片D的正上方移動(步驟S2)。將被載置於中間載台22的晶片D、及在晶片D之前的正上方降下來的夾頭23c,由1台的中間載台照相機21從正上方同時攝像,檢出晶片D對於夾頭23c的旋轉角也就是傾斜θ d(步驟 S3)。中間載台22上的晶片D的傾斜,是使成為安裝載台32上的基板P的傾斜θ p的方式,將中間載台22繞轉角度(θ p-θ d)(步驟S4)。又,步驟S1、S2及S4中的傾斜θ p、θ d及角度(θ p-θ d),是從辨認照相機所見繞順時鐘為正。由步驟S1、S3,檢出:旋轉角的傾斜、及基板P及晶片D的各中心位置從夾頭23c的中心位置的位置偏離也可以。 First, in the first drawing, when the substrate P is transported onto the mounting stage 32, as shown in Fig. 7(a), the mounting position and the pasting of the wafer D on the substrate P indicated by the reference mark are attached. The chuck 23c at the mounting position or the mounting position is simultaneously imaged from the upper side by the single press camera 31, and the rotation angle of the substrate P with respect to the chuck is also detected as the inclination θp (step S1). Further, the corner mark shown in Fig. 7(b) is only an example of the substrate mark Pm, and the position where the wafer D is placed on the substrate P can be displayed. As shown in Fig. 7(b), the dummy nip head 23 is moved right above the wafer D placed on the intermediate stage 22 (step S2). The wafer D placed on the intermediate stage 22 and the chuck 23c which is lowered directly above the wafer D are simultaneously imaged from one directly by the intermediate stage camera 21, and the wafer D is detected for the chuck. The rotation angle of 23c is also the inclination θ d (step S3). The inclination of the wafer D on the intermediate stage 22 is such that the inclination θ p of the substrate P on the mounting stage 32 is reversed (θ p - θ d ) (step S4). Further, the inclinations θ p and θ d and the angle (θ p - θ d) in the steps S1, S2, and S4 are positive from the recognition clock seen by the recognition camera. In steps S1 and S3, it is detected that the inclination of the rotation angle and the position of each of the center positions of the substrate P and the wafer D are deviated from the position of the center position of the chuck 23c.

接著,將假壓合頭23降下,將晶片D吸附保持(步驟S5)。此結果,假壓合頭23,是由基板P的傾斜θ p將晶片D吸附保持。其後,將假壓合頭23朝安裝載台32上的基板P的上方移動(步驟S6)。在步驟S1、S3中,檢出旋轉角的傾斜、及基板P及晶片D的各中心位置從夾頭23c的中心位置的位置偏離,在前述移動中將位置偏離修正也可以。 Next, the dummy press head 23 is lowered to adsorb and hold the wafer D (step S5). As a result, the dummy nip head 23 adsorbs and holds the wafer D by the inclination θ p of the substrate P. Thereafter, the dummy nip head 23 is moved upward above the substrate P on the mounting stage 32 (step S6). In steps S1 and S3, the inclination of the rotation angle and the position of each of the center positions of the substrate P and the wafer D from the center position of the chuck 23c are detected, and the positional deviation may be corrected during the movement.

接著,由1台的壓合照相機31,將被吸附保持在假壓合頭23c的晶片D及基板上的基板記號Pm的雙方時常從正上方一邊同時攝像,一邊使該晶片D的角部與基板記號Pm所具有的角部一致的方式將假壓合頭23朝XY方向移動,進行假壓合(步驟S7)。例如,將晶片D及基板P上的基板記號Pm的雙方時常從斜方同時攝像的話,由傾斜所產生的誤差會發生,無法由數μm單位正確地位置對合。假壓合後,將假壓合頭23再度朝中間載台22的正上方移動(步驟S8) Then, both of the wafer D adsorbed and held by the pseudo-compression head 23c and the substrate mark Pm on the substrate are simultaneously imaged from the upper side by the press-fit camera 31, and the corners of the wafer D are simultaneously The pseudo-compression head 23 is moved in the XY direction so that the corner portions of the substrate mark Pm match each other, and the pseudo-compression is performed (step S7). For example, when both the wafer D and the substrate symbol Pm on the substrate P are simultaneously imaged from the oblique direction, an error caused by the tilt occurs, and the position cannot be accurately aligned by a unit of several μm. After the false pressing, the false pressing head 23 is again moved directly above the intermediate stage 22 (step S8)

此後,雖是在晶片D上將新的晶片D進入積層處理, 但是晶片D的積層傾斜因為會成為基板P的傾斜θ p,所以至規定的積層枚數為止,將基板P置換成已被貼裝晶片D並反覆步驟S2至步驟S8的處理(步驟S9)。 Thereafter, although the new wafer D is placed on the wafer D into the lamination process, However, since the laminate of the wafer D is inclined so as to become the inclination θ p of the substrate P, the substrate P is replaced with the wafer D to be mounted and the processing of steps S2 to S8 is repeated until the predetermined number of layers is formed (step S9).

一般,在反覆第6圖所示的處理中,中間載台照相機21、壓合照相機31、假壓合頭23等的位置偏離、旋轉角等的隨時間推移變化會發生。 In general, in the process shown in the sixth embodiment, the positional shift of the intermediate stage camera 21, the press-fit camera 31, the pseudo-compression head 23, and the like, and the change in the rotation angle and the like occur with time.

但是依據上述實施例的話,可以由引起隨時間推移變化的構成要素,檢出晶片D對於引起隨時間推移變化的貼裝位置的姿勢,就可以由1台的辨認照相機(攝像手段)從正上方時常將貼裝的晶片D及貼裝位置一邊時常反饋一邊貼裝。 However, according to the above-described embodiment, it is possible to detect the posture of the wafer D with respect to the mounting position which changes with time by the component which changes with time, and it is possible to directly recognize the camera (imaging means) from one above. From time to time, the placed wafer D and the mounting position are often placed on the side of the feedback.

因此,依據以上說明的本實施例的話,在構成第1圖的構成要素即使隨時間推移發生變化,也不會受其影響,可以將晶片正確地貼裝在貼裝位置。 Therefore, according to the present embodiment described above, even if the constituent elements constituting the first embodiment change over time, they are not affected, and the wafer can be correctly attached to the mounting position.

且依據以上說明的本實施例的話,在1台的中間載台照相機21及中間載台22之間、及1台的壓合照相機31及安裝載台32之間,因為未設置攝像用的光學系,所以沒有由該光學系所產生的位置偏離,可以正確地貼裝。 According to the present embodiment described above, between the intermediate stage camera 21 and the intermediate stage 22 of one unit, and between the press camera 31 and the mounting stage 32 of one unit, optical for imaging is not provided. Therefore, there is no positional deviation caused by the optical system, and it can be correctly mounted.

接著,將晶片接合機100的整體的一連的處理使用第8圖、第9圖說明。在第8圖、第9圖中,為了容易了解說明,使用與第1圖相異的在基板P中只有一處的貼裝位置的情況的例說明。在以下說明中,在圖所示的每一步驟說明各載台中的處理。在第8圖、第9圖中,在 各照相機下具有箭頭的情況時,顯示該照相機正進行攝像處理。 Next, the entire process of the wafer bonding machine 100 will be described with reference to FIGS. 8 and 9. In the eighth and ninth drawings, for the sake of easy understanding, an example in which the mounting position of only one of the substrates P is different from that of the first embodiment is used. In the following description, the processing in each stage will be described in each step shown in the drawing. In Figure 8 and Figure 9, in When there is an arrow under each camera, it is displayed that the camera is performing imaging processing.

第8圖(a): Figure 8 (a):

在安裝載台32中,在被搬運來的基板P的正上方將夾頭23c移動,由壓合照相機31攝像,檢查基板P的狀態,並且進行第6圖的步驟S1的處理,檢出基板的旋轉角也就是傾斜θ p。 In the mounting stage 32, the chuck 23c is moved right above the conveyed substrate P, and the image is detected by the press camera 31, and the state of the substrate P is inspected, and the process of step S1 of FIG. 6 is performed to detect the substrate. The rotation angle is also the inclination θ p .

在供給載台12中,由拾取頭13從晶圓W將晶片D拾取,載置在中間載台22。 In the supply stage 12, the wafer D is picked up from the wafer W by the pickup head 13, and placed on the intermediate stage 22.

第8圖(b): Figure 8 (b):

在中間載台22中,在被載置的晶片D的正上方將夾頭23c移動,由中間載台照相機21進行第6圖的步驟S3的處理,檢出晶片D的旋轉角也就是傾斜θ d。 In the intermediate stage 22, the chuck 23c is moved right above the wafer D to be placed, and the intermediate stage camera 21 performs the process of step S3 of Fig. 6, and the rotation angle of the wafer D is also detected as the inclination θ. d.

在供給載台12中,由返回至供給載台12的拾取頭13進入下一個晶片D的拾取動作。 In the supply stage 12, the pickup operation of the next wafer D is carried out by the pickup head 13 returned to the supply stage 12.

又,在安裝載台32中,如虛線所示晶片D存在的話,由正式壓合頭33進行正式壓合。 Further, in the mounting stage 32, if the wafer D is present as indicated by a broken line, the main pressing head 33 performs the final pressing.

第8圖(c): Figure 8 (c):

在中間載台22中,依據第6圖的步驟S4的處理,藉由繞轉驅動裝置25將中間載台22繞轉角度(θ p-θ d),進行θ修正。 In the intermediate stage 22, according to the processing of step S4 of Fig. 6, the intermediate stage 22 is rotated by the revolving drive unit 25 (θ p - θ d ) to perform θ correction.

又,在安裝載台32中,由第8圖(b)進行了正式壓合的話,處理終了後由壓合照相機31將壓合的狀態攝像,朝退避位置移動。將異常檢出時,是將其後積層處理中止。 Further, when the mounting stage 32 is subjected to the final press-fitting by the eighth drawing (b), after the end of the process, the press-fit camera 31 captures the pressed state and moves toward the retracted position. When an abnormality is detected, the subsequent lamination processing is aborted.

第9圖(d): Figure 9 (d):

在中間載台22中,進行第6圖的步驟S5的處理,由假壓合頭23將晶片D由基板P的傾斜θ p吸附保持。 In the intermediate stage 22, the process of step S5 of Fig. 6 is performed, and the wafer D is adsorbed and held by the tilt θp of the substrate P by the dummy nip head 23.

第9圖(e): Figure 9 (e):

在中間載台22中,進行第6圖的步驟S6的處理,由假壓合頭23將晶片D拾取,朝向安裝載台32。由其中途處,由下視照相機41,將晶片D從正下方攝像,將晶片的傾斜θ p確認,並且將吸附保持狀態和垃圾的有無把握也可以。 In the intermediate stage 22, the process of step S6 of Fig. 6 is performed, and the wafer D is picked up by the dummy nip head 23 and directed toward the mounting stage 32. In the middle, the wafer D is imaged from below by the lower-view camera 41, and the inclination θ p of the wafer is confirmed, and the presence or absence of the adsorption holding state and the garbage may be grasped.

在供給載台12中,將被拾取的下一個晶片D朝向中間載台22搬運。 In the supply stage 12, the next wafer D picked up is transported toward the intermediate stage 22.

第9圖(f): Figure 9 (f):

下一個晶片D是藉由拾取頭13被載置在中間載台22中。 The next wafer D is placed in the intermediate stage 22 by the pickup head 13.

在安裝載台32中,伴隨由壓合照相機31進行的第6圖的步驟S7的處理,將由假壓合頭23被搬運來的晶片,載置在基板P或是已被貼裝的由虛線顯示的晶片D上。 In the mounting stage 32, the wafer conveyed by the dummy nip head 23 is placed on the substrate P or has been mounted by the dotted line in accordance with the processing of step S7 of Fig. 6 by the press-fit camera 31. Displayed on wafer D.

第9圖(f)的處理後,進入積層處理,返回至正式壓合的第8圖(b)。此情況,在安裝載台32中,在第8圖(a)~第9圖(e)由虛線顯示的晶片D是成為實線。成為規定的積層數量的話,因為進入被搬運來的新的基板或是在第1圖中的相鄰的生產線的基板的處理,所以返回至第8圖(a)。 After the processing of Fig. 9(f), the layering process is entered, and the process returns to the eighth drawing (b) of the final pressing. In this case, in the mounting stage 32, the wafer D shown by the broken line in FIGS. 8(a) to 9(e) is a solid line. When the predetermined number of layers is formed, the processing proceeds to the new substrate to be transported or the substrate of the adjacent production line in Fig. 1, and therefore returns to Fig. 8(a).

又,例如,假壓合的假壓合頭的荷重(Light Place Load)是0.5~2[N](荷重負荷時間(Short Place Time):0.1~0.5[s]),正式壓合的正式壓合頭的荷重(Heavy Place Load)是1~70[N](荷重負荷時間(Heavy Place Time):0.5[s]以上)。 Further, for example, the load of the false press-fitted false-compression head (Light Place Load) is 0.5 to 2 [N] (Short Place Time: 0.1 to 0.5 [s]), and the formal pressure of the final press-fit The Heavy Place Load is 1~70[N] (Heavy Place Time: 0.5[s] or more).

依據以上說明的本實施例的話,對於假壓合的位置對合,不需要如習知先整理晶片的姿勢後載置在中間載台,或是藉由下視照相機將晶片的姿勢檢出,而是只有進行安裝載台的位置對合即可,所以可以削減晶片接合機整體的貼裝工時。 According to the embodiment described above, the positional alignment of the false presses does not need to be placed on the intermediate stage as in the conventional posture of arranging the wafer, or the posture of the wafer is detected by the lower view camera, but It is only necessary to perform the positional alignment of the mounting stage, so that the mounting time of the entire wafer bonding machine can be reduced.

接著,說明本發明最佳的晶片接合機的第2實施例。與本實施例的第1實施例相異的點,第1是假壓合頭23,第2是伴隨第1變更的假壓合頭23的動作的控制方法的變更、及伴隨中間載台22的變更。 Next, a second embodiment of the preferred wafer bonding machine of the present invention will be described. The point different from the first embodiment of the present embodiment is that the first is the pseudo-compression head 23, the second is the change of the control method of the operation of the pseudo-compression head 23 with the first change, and the accompanying intermediate stage 22 Changes.

在第1實施例中,假壓合頭23不具有將夾頭23c繞轉的功能。在本實施例中,使也可與X、Y方向的位置偏離修正一起同時進行旋轉角修正的方式,在假壓合頭23設置夾頭繞轉機構23T。夾頭繞轉機構23T,是在假 壓合時或是假壓合前,在壓合照相機31可以將基板P或是已貼裝完成的晶片D及夾頭23c所吸附的晶片D時常同時攝像的狀態下,可以進行夾頭23c的繞轉。在夾頭23c吸附保持的晶片D從基板P或是已貼裝完成的晶片D的上方接近時或是接觸的臨近的階段中,壓合照相機31,是可以時常將這些的夾頭23c所吸附的晶片D及基板P或是已貼裝完成的晶片D的雙方攝像。 In the first embodiment, the dummy press head 23 does not have a function of rotating the chuck 23c. In the present embodiment, the chuck revolving mechanism 23T is provided in the dummy nip head 23 in such a manner that the rotation angle correction can be performed simultaneously with the positional deviation correction in the X and Y directions. Chuck revolving mechanism 23T, is in the fake Before the press-fitting or before the false press-fitting, the press-fit camera 31 can perform the chuck 23c in a state where the substrate P or the wafer D that has been mounted and the wafer D adsorbed by the chuck 23c are often imaged at the same time. Revolve around. When the wafer D adsorbed and held by the chuck 23c is approached from above the substrate P or the wafer D that has been mounted, or in the vicinity of the contact, the camera 31 is pressed, and the chuck 23c can be adsorbed from time to time. Both the wafer D and the substrate P or the wafer D that has been mounted are imaged.

第10圖,是顯示滿足如此的條件的一例也就是夾頭繞轉機構的23T的圖。夾頭繞轉機構23T,在第4圖(a)中,是設在第4圖的由虛線顯示的領域B,藉由無圖示的機構被支撐在分離部23d。 Fig. 10 is a view showing an example of a condition that satisfies such a condition, that is, 23T of the chuck revolving mechanism. The chuck revolving mechanism 23T is a field B shown by a broken line in Fig. 4 in Fig. 4(a), and is supported by the separating portion 23d by a mechanism (not shown).

夾頭繞轉機構23T,是具有:從夾頭保持部23s的軸中心延伸的繞轉軸棒23b、及在從繞轉軸棒23b的兩端對於夾頭23c的吸附面平行的面內各別從該兩端對於繞轉軸棒23b垂直交叉地設置的2條驅動桿23p、及將2條驅動桿23p各別伸縮的2條伸縮致動器23a。 The chuck revolving mechanism 23T has a winding shaft 23b extending from the axial center of the chuck holding portion 23s, and a surface parallel to the suction surface of the chuck 23c from both ends of the winding shaft 23b. The two ends are two drive levers 23p that are perpendicularly disposed around the rotating shaft 23b, and two telescopic actuators 23a that extend and contract the two drive rods 23p.

在此機構中,藉由將2條伸縮致動器23a朝彼此相反方向伸縮,就可以從夾頭保持部23s的軸中心,即夾頭的吸附面積的中心繞轉,可以容易地調整旋轉角。 In this mechanism, by expanding and contracting the two telescopic actuators 23a in opposite directions to each other, the center of the shaft of the chuck holding portion 23s, that is, the center of the suction area of the chuck can be rotated, and the rotation angle can be easily adjusted. .

在本實施例中,藉由具有夾頭繞轉機構23T,在貼裝位置中,可以由1台的壓合照相機31將基板P或是已貼裝完成的晶片D及夾頭23c所吸附的晶片D時常從正上方一邊攝像,一邊將夾頭23c的位置及旋轉角控制、貼裝。因此,在本實施例中,不需要預先將被載置於 基板P的傾斜θ p及中間載台22的晶片D的傾斜θ d檢出,不需要進行由中間載台22所產生的旋轉角修正。因此,在本實施例中,中間載台22的繞轉驅動裝置25也不需要。 In the present embodiment, by having the chuck rewinding mechanism 23T, in the mounting position, the substrate P or the mounted wafer D and the chuck 23c can be adsorbed by one press camera 31. The wafer D is often imaged from the top side, and the position and the rotation angle of the chuck 23c are controlled and mounted. Therefore, in this embodiment, it is not necessary to be placed in advance. The inclination θ p of the substrate P and the inclination θ d of the wafer D of the intermediate stage 22 are detected, and it is not necessary to perform the rotation angle correction by the intermediate stage 22 . Therefore, in the present embodiment, the orbiting drive unit 25 of the intermediate stage 22 is also unnecessary.

依據以上說明的本實施例的話,藉由使用本實施例的假壓合頭23進行假壓合,將基板P或是已被貼裝的晶片D及新的晶片D(夾頭23c)時常同時攝像,旋轉角修正也可以與X、Y方向的位置偏離修正一起同時進行。伴隨此,即使未預先檢出被載置於基板P的旋轉角也就是傾斜θ p及中間載台22的晶片D的旋轉角也就是傾斜θ也可以,且由中間載台22所產生的旋轉角修正也不必要,所以可以達成工時減少。 According to the embodiment described above, by using the dummy press-bonding head 23 of the present embodiment, the substrate P or the wafer D to be mounted and the new wafer D (the chuck 23c) are often simultaneously The imaging and the rotation angle correction can also be performed simultaneously with the positional deviation correction in the X and Y directions. Along with this, even if the rotation angle of the substrate P is not detected in advance, that is, the inclination θ p and the rotation angle of the wafer D of the intermediate stage 22 are the inclination θ, and the rotation by the intermediate stage 22 is possible. Angle correction is also unnecessary, so a reduction in man-hours can be achieved.

且在以上說明的本實施例中,在構成第1圖的構成要素即使隨時間推移發生變化,因為在貼裝位置中,也可以將基板P或是已被貼裝的晶片D及新的晶片D(夾頭23c)時常同時攝像,使新的晶片D來到貼裝位置的方式,將夾頭23c控制,所以可以不被隨時間推移變化影響地貼裝。 Further, in the present embodiment described above, the constituent elements constituting the first embodiment are changed over time, because the substrate P or the wafer D to be mounted and the new wafer can be placed in the mounting position. D (the chuck 23c) is constantly imaged at the same time, and the new wafer D is brought to the mounting position, and the chuck 23c is controlled. Therefore, it can be mounted without being affected by changes over time.

且在以上說明的本實施例中,假壓合時,也與只有第11圖所示的狀態位置對合可能的專利文獻2相異,因為可以將基板P或是已被貼裝的晶片D及新被貼裝的晶片D時常從正上方攝像,將兩者的位置對合,所以可以精度佳地貼裝。 Further, in the present embodiment described above, the pseudo-compression is also different from Patent Document 2 in which only the state position shown in Fig. 11 is possible, since the substrate P or the wafer D to be mounted can be used. The newly mounted wafer D is often imaged from directly above, and the positions of the two are aligned, so that it can be mounted with high precision.

即,因為夾頭所吸附保持的晶片,直到與載 置晶片的場所接觸之前為止,可以使壓合照相機包含的照相機,將前述晶片及載置晶片的場所的雙方從正上方攝像,所以藉由傾斜發生的位置的誤差不會發生,且可以將畫像的焦點對焦地攝像。進一步,如上述,將晶片吸附保持的夾頭,在與載置晶片的場所接觸之後,有必要依據藉由壓合照相機包含的照相機被攝像的畫像,修正晶片及設置晶片的場所的位置關係的情況(例如控制裝置,是比較將晶片及設置晶片的場所攝像的畫像、及將正確的晶片及設置晶片的場所事前攝像的正確的規定的畫像,若晶片及設置晶片的場所的關係是產生規定的值以上偏離的情況等),也可以將前述晶片的位置修正。這是因為藉由與設置晶片的場所的位置接觸之後也可以將被吸附在夾頭的晶片修正,而具有可以使被吸附在夾頭的晶片及設置晶片的場所的距離不會發生偏離地被修正的效果。 That is, because the chuck holds the held wafer until it is loaded Before the contact with the wafer is placed, the camera included in the camera can be imaged from both the front side of the wafer and the place where the wafer is placed. Therefore, the position error caused by the tilt does not occur, and the image can be taken. The focus is on the camera. Further, as described above, after the chuck for holding and holding the wafer is brought into contact with the place where the wafer is placed, it is necessary to correct the positional relationship between the wafer and the place where the wafer is placed, in accordance with the image captured by the camera included in the camera. In the case of the control device, the image of the wafer and the place where the wafer is placed is compared with the image of the wafer and the place where the wafer is placed, and the position of the wafer and the place where the wafer is placed is determined. The position of the wafer may be corrected by changing the value above or below. This is because the wafer adsorbed to the chuck can be corrected by contact with the position of the place where the wafer is placed, and the wafer can be adsorbed on the chuck and the distance at which the wafer is placed can be prevented from deviating. The effect of the correction.

在以上說明的第1、第2實施例中,顯示具有中間載台,進行假壓合、正式壓合的晶片接合機的例。例如,具有可以辨認晶片吸附保持姿勢的方式將夾頭分離,由1台的辨認照相機從正上方將晶片及貼裝位置一邊同時看一邊貼裝的本發明的接合頭,也可以適用在專利文獻2所示的正反接合機中的貼裝和晶片的收授。 In the first and second embodiments described above, an example of a wafer bonding machine having an intermediate stage and performing false pressing and final pressing is shown. For example, the bonding head of the present invention can be attached to the wafer and the mounting position while being viewed from the top of the identification camera by the identification camera, and the bonding head of the present invention can be applied to the patent document. The placement of the positive and negative bonding machine shown in 2 and the receipt of the wafer.

22‧‧‧中間載台 22‧‧‧Intermediate stage

23‧‧‧假壓合頭 23‧‧‧ False press head

23c‧‧‧夾頭 23c‧‧‧ chuck

23d‧‧‧分離部 23d‧‧‧Separation Department

23E‧‧‧昇降驅動軸 23E‧‧‧ Lifting drive shaft

23g‧‧‧導軌 23g‧‧‧rail

23H‧‧‧假壓合頭的本體 23H‧‧‧The body of the false press head

23k‧‧‧吸引纜線 23k‧‧‧Attraction cable

23m‧‧‧昇降部 23m‧‧‧ Lifting Department

23s‧‧‧夾頭保持部 23s‧‧‧Chuck Holder

23w‧‧‧假壓合頭的本體側部 23w‧‧‧The side of the body of the false press head

D‧‧‧晶片 D‧‧‧ wafer

Claims (16)

一種接合裝置,具備:可以將晶片移動、載置的工具、及將前述晶片被載置的載置位置從正上方攝像的1台的攝像手段,前述工具,是具備可以將前述晶片吸附保持的夾頭,使前述攝像手段可以辨認前述夾頭所保持的晶片及前述載置位置的雙方的形態;前述夾頭,是將被吸附在前述夾頭的前述晶片載置在前述載置位置時,前述攝像手段可以將前述晶片的一邊、或包含前述晶片的2個角部的相對的2邊攝像。 A bonding apparatus includes: a tool that can move and mount a wafer, and an imaging device that images a mounting position on which the wafer is placed from above; the tool includes a device that can hold and hold the wafer The chuck allows the image pickup means to recognize both the wafer held by the chuck and the placement position; and the chuck is configured to mount the wafer adsorbed on the chuck at the placement position; The imaging means can image one side of the wafer or two opposite sides including two corners of the wafer. 如申請專利範圍第1項的接合裝置,其中,前述夾頭,是不存在有在前述攝像手段及前述工具所保持的前述晶片之間的空間阻礙攝像的形態。 The bonding apparatus according to claim 1, wherein the chuck has a form in which a space between the imaging means and the wafer held by the tool is prevented from being imaged. 如申請專利範圍第1項的接合裝置,其中,前述工具,是進一步具有將前述夾頭昇降的昇降機構,前述夾頭,是位於與前述昇降機構的重心相異的重心的位置。 The joining device according to claim 1, wherein the tool further includes a lifting mechanism that moves the chuck up and down, and the chuck is located at a center of gravity different from a center of gravity of the lifting mechanism. 如申請專利範圍第1項的接合裝置,其中,前述工具,是位於從將前述夾頭昇降的側部分離的位置的前述夾頭。 The joining device according to claim 1, wherein the tool is a chuck located at a position separated from a side portion where the chuck is raised and lowered. 如申請專利範圍第1至4項中任一項的接合裝置,其中, 前述工具,是將前述晶片假壓合在前述載置位置也就是貼裝位置的接合頭,進一步具有將被假壓合的前述晶片正式壓合的正式壓合頭;前述正式壓合頭的壓合面積大於前述晶片的被壓合面積。 A joining device according to any one of claims 1 to 4, wherein The tool is a bonding head in which the wafer is falsely pressed to the mounting position, that is, a mounting position, and further has a final pressing head for positively pressing the wafer that is falsely pressed; the pressure of the front pressing head The combined area is larger than the pressed area of the aforementioned wafer. 如申請專利範圍第1至4項中任一項的接合裝置,其中,前述晶片是載置於基板或已貼裝於基板的晶片上,前述基板具有複數的前述載置位置。 The bonding apparatus according to any one of claims 1 to 4, wherein the wafer is placed on a substrate or a wafer mounted on the substrate, and the substrate has a plurality of the mounting positions. 如申請專利範圍第6項的接合裝置,其中,前述工具,具有在與前述載置位置平行的面內將前述夾頭繞轉的夾頭繞轉手段。 The joining device according to claim 6, wherein the tool has a chuck revolving means for rotating the chuck in a plane parallel to the mounting position. 如申請專利範圍第7項的接合裝置,其中,前述夾頭繞轉手段,是具有:從夾頭保持部的軸中心延伸的繞轉軸棒、及在從繞轉軸棒的兩端對於前述夾頭的吸附面平行的面內各別從該兩端對於繞轉軸棒垂直交叉地設置的2條驅動桿、及將2條驅動桿各別伸縮的2條伸縮致動器。 The joining device of claim 7, wherein the chuck winding means has: a rotating shaft rod extending from a shaft center of the chuck holding portion; and the chuck at the both ends of the winding shaft The two adsorption rods are provided in the plane parallel to the adsorption surface, and the two drive rods are disposed perpendicularly to the rotation axis rods, and the two telescopic actuators that respectively extend and contract the two drive rods. 一種接合方法,具有:使將晶片吸附保持的夾頭從大致上方朝載置前述晶片的載置位置下降的步驟;及由前述下降的步驟的中途處,藉由位於前述晶片及前述載置位置的雙方的正上方的攝像手段從正上方攝像的攝 像步驟;前述攝像步驟,將前述晶片的一邊、或包含前述晶片的2個角部的相對的2邊攝像。 A bonding method includes a step of lowering a chuck for holding and holding a wafer from a substantially upper position toward a mounting position on which the wafer is placed, and a step of lowering the step by the step of positioning the wafer and the mounting position Photographed by the camera directly above the camera In the image capturing step, one side of the wafer or two opposite sides including the two corners of the wafer are imaged. 如申請專利範圍第9項的接合方法,其中,進一步具有:依據藉由前述攝像步驟獲得的畫像,對於應載置前述晶片的位置藉由控制裝置修正將前述晶片吸附保持的前述夾頭的位置,在規定的應載置的場所將前述晶片載置的載置步驟。 The bonding method according to claim 9, further comprising: correcting a position of the chuck that adsorbs and holds the wafer by a control device with respect to a position at which the wafer is to be placed, according to an image obtained by the image capturing step The step of placing the wafer on a predetermined place to be placed. 如申請專利範圍第9項的接合方法,其中,前述移動的步驟,是藉由具備將前述夾頭昇降的昇降機構的工具被移動的步驟,由位於與前述昇降機構的重心相異的重心的位置的前述夾頭將前述晶片吸附。 The joining method of claim 9, wherein the moving step is a step of moving a tool having a lifting mechanism that raises and lowers the chuck, and is located at a center of gravity different from a center of gravity of the lifting mechanism The aforementioned chuck of the position adsorbs the aforementioned wafer. 如申請專利範圍第9至11項中任一項的接合方法,其中,前述下降的步驟是由將前述晶片假壓合在前述載置位置也就是貼裝位置的接合頭所產生的下降的步驟,進一步具有將被假壓合的前述晶片藉由正式壓合的正式壓合頭接合的步驟;前述正式壓合頭的壓合面積大於前述晶片的被壓合面積。 The joining method according to any one of claims 9 to 11, wherein the step of lowering is a step of lowering the bonding head produced by falsely pressing the wafer to the mounting position, that is, the mounting position. Further, there is further provided a step of bonding the dummy wafer to be positively pressed by a formal press-fitted press-bonding head; the press-bonding area of the final press-bonding head is larger than the pressed-bonded area of the wafer. 如申請專利範圍第9至11項中任一項的接合方法,其中,前述晶片是載置於基板或已貼裝於基板的晶片上,前 述基板具有複數的前述載置位置。 The bonding method according to any one of claims 9 to 11, wherein the wafer is placed on a substrate or a wafer that has been mounted on the substrate, before The substrate has a plurality of the above-described placement positions. 如申請專利範圍第13項的接合方法,其中,前述載置步驟,根據藉由前述攝像步驟所得到的畫像,藉由夾頭繞轉手段在相對於前述夾頭的吸附面平行的面內將前述夾頭繞轉,修正前述夾頭的位置,將前述晶片載置於規定的應載置的場所。 The joining method of claim 13, wherein the placing step is performed by a chuck winding means in a plane parallel to the adsorption surface of the chuck according to the image obtained by the image capturing step The chuck is rotated to correct the position of the chuck, and the wafer is placed in a predetermined place to be placed. 如申請專利範圍第14項的接合方法,其中,前述夾頭繞轉手段,是具有:從夾頭保持部的軸中心延伸的繞轉軸棒、及在從繞轉軸棒的兩端對於前述夾頭的吸附面平行的面內各別從該兩端對於繞轉軸棒垂直交叉地設置的2條驅動桿、及將2條驅動桿各別伸縮的2條伸縮致動器。 The joining method of claim 14, wherein the chuck winding means has: a rotating shaft rod extending from a shaft center of the chuck holding portion, and the chuck at the both ends of the winding shaft The two adsorption rods are provided in the plane parallel to the adsorption surface, and the two drive rods are disposed perpendicularly to the rotation axis rods, and the two telescopic actuators that respectively extend and contract the two drive rods. 一種接合方法,具有:(a)將晶片拾取而將前述晶片移動到載置前述晶片的載置位置的基板或已貼裝的晶片的上方的步驟;(b)使將前述晶片吸附保持的夾頭從上方朝前述載置位置下降的步驟;(c)藉由位於前述晶片及前述載置位置的雙方的正上方的攝像手段從正上方攝像的攝像步驟;(d)根據藉由前述攝像步驟所得到的畫像,藉由夾頭繞轉手段在相對於前述夾頭的吸附面平行的面內將前述夾頭繞轉,修正前述夾頭的位置,將前述晶片假壓合在規定的應載置的場所的步驟;及(e)藉由將被假壓合的前述晶片正式壓合的正式壓合 頭進行接合的步驟;攝像手段將前述晶片的一邊、或包含前述晶片的2個角部的相對的2邊攝像;對於前述基板的複數的載置位置反覆進行前述(a)步驟至(e)步驟來進行接合。 A bonding method comprising: (a) a step of picking up a wafer to move the wafer to a substrate on which the wafer is placed, or a wafer to be mounted; and (b) a chuck for holding and holding the wafer a step of lowering the head from the upper side toward the placement position; (c) an imaging step of imaging from directly above by an imaging means located directly above both the wafer and the placement position; (d) according to the imaging step The obtained image is wound around the chuck in a plane parallel to the adsorption surface of the chuck by a chuck winding means, and the position of the chuck is corrected to falsely press the wafer to a predetermined load. a step of placing the place; and (e) a formal press-fitting by positively pressing the previously pressed wafer a step of bonding the head; the imaging means imaging one side of the wafer or two opposite sides including the two corners of the wafer; and performing the above (a) to (e) on the plurality of mounting positions of the substrate Steps to join.
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