TWI592271B - Scratch the brittle substrate with the rule of the substrate, the method of characterization and breaking method - Google Patents
Scratch the brittle substrate with the rule of the substrate, the method of characterization and breaking method Download PDFInfo
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Description
本發明係關於對半導體晶圓等之脆性材料基板,且係具有於縱方向及橫方向排列地形成之多個功能區域(亦稱元件區域)之基板,就每功能區域進行刻劃時之刻劃用治具、刻劃方法及分斷方法。 The present invention relates to a substrate for a brittle material such as a semiconductor wafer, and a plurality of functional regions (also referred to as element regions) which are formed in a vertical direction and a lateral direction, and are scribed at each functional region. Use fixtures, scribing methods and breaking methods.
半導體晶片,係藉由對形成於半導體晶圓之元件區域,在其區域之邊界位置進行分斷而製造。習知,在將晶圓分斷成晶片之情形,係藉由切割(die singulation)裝置使切割刀片旋轉,而藉由切削將半導體晶圓切斷成小片。 A semiconductor wafer is manufactured by dividing an element region formed in a semiconductor wafer at a boundary position of a region thereof. Conventionally, in the case where the wafer is divided into wafers, the cutting blade is rotated by a die singulation device, and the semiconductor wafer is cut into small pieces by cutting.
然而在使用切割裝置之情形,用於將切削所造成之排出屑排出之水係為必需,且用於以該水或排出屑不對半導體晶片之性能造成不良影響之方式對半導體晶片施以保護、將水或排出屑進行洗淨之洗淨步驟成為必要。因此存在有步驟變複雜、無法降低成本或縮短加工時間之缺點。此外,因使用切割刀片之切削而產生膜剝落、缺陷產生等之問題。此外,在具有微小之機械構造之MEMS基板中,由於水之表面張力將引起構造之破壞,因此產生了無法使用水而無法藉由切割進行分斷之問題。 However, in the case of using a cutting device, it is necessary to discharge the discharge chips caused by the cutting, and to protect the semiconductor wafer in such a manner that the water or the discharge chips do not adversely affect the performance of the semiconductor wafer, A washing step of washing the water or the discharged chips becomes necessary. Therefore, there are disadvantages that the steps become complicated, the cost cannot be reduced, or the processing time is shortened. In addition, problems such as film peeling, defect generation, and the like occur due to cutting using a cutting blade. Further, in the MEMS substrate having a minute mechanical structure, since the surface tension of water causes damage to the structure, there is a problem that water cannot be used and it is impossible to break by cutting.
在專利文獻1中,提及有沿著刻劃預定線對半導體晶圓進行刻劃,且藉由裂斷用裝置進行裂斷之基板裂斷裝置。於成為裂斷之對象之半導體晶圓,排列地形成有多個功能區域。在進行分斷之情形,首先,於 半導體晶圓於功能區域之間隔著等間隔於縱方向及橫方向形成刻劃線。之後,將形成有刻劃線之面作為下面並配置於底刀(bed knife)上,將刀片從已刻劃之基板之正上方沿著刻劃線進行下壓而藉此裂斷。 Patent Document 1 mentions a substrate cracking device that scribes a semiconductor wafer along a predetermined line of scribe and that is broken by a rupturing device. A plurality of functional regions are formed in a row on the semiconductor wafer to be cracked. In the case of breaking, first of all, The semiconductor wafer is formed with scribe lines at equal intervals in the longitudinal direction and the lateral direction at functional regions. Thereafter, the surface on which the score line is formed is placed as a lower surface and placed on a bed knife, and the blade is pressed down along the scribe line from directly above the scribed substrate to thereby break.
專利文獻1:日本特開2004-39931號公報 Patent Document 1: Japanese Laid-Open Patent Publication No. 2004-39931
然而,在對半導體晶圓等之脆性材料基板進行刻劃之情形,不僅從形成有功能區域之面,亦有被要求從其背面進行刻劃且之後使基板反轉而進行裂斷之情形。圖1(a),係表示在如此之情形進行刻劃之前之載置於刻劃裝置之半導體晶圓之剖面圖。如本圖所示般,在從半導體晶圓101之基板側進行刻劃之情形,在半導體晶圓101之上之功能面102之中、功能區域102a,102b間形成刻劃線時,使具有功能區域之功能面與吸附平台103接觸而保持半導體晶圓101。然而,一旦對刻劃刀輪104賦予既定之負載並使其轉動,則存在有對功能區域102a,102b施加壓力而造成損傷之問題。 However, in the case of scribing a brittle material substrate such as a semiconductor wafer, it is not only required to be scribed from the back surface of the functional region but also to be reversed from the back surface and then to be broken. Figure 1 (a) is a cross-sectional view of a semiconductor wafer placed on a scoring apparatus prior to scoring in such a situation. As shown in the figure, when scribing from the substrate side of the semiconductor wafer 101, when the scribe line is formed between the functional regions 102 on the semiconductor wafer 101 and between the functional regions 102a and 102b, The functional surface of the functional area is in contact with the adsorption stage 103 to hold the semiconductor wafer 101. However, once a given load is applied to the scoring wheel 104 and rotated, there is a problem that pressure is applied to the functional regions 102a, 102b to cause damage.
此外,如圖1(b)所示,在將功能面貼附於切割帶材105並配置於吸附平台103上之情形,存在有不僅在刻劃時施加壓力,亦在從切割帶材105剝去時,可能在半導體晶圓上之功能區域造成損傷的問題。 Further, as shown in FIG. 1(b), in the case where the functional surface is attached to the dicing tape 105 and disposed on the adsorption stage 103, there is a pressure not only applied at the time of scoring but also from the dicing tape 105. When it goes, it may cause damage to the functional area on the semiconductor wafer.
本發明係有鑑於如此之問題點而完成者,其目的在於提供一種用於以對半導體晶圓之功能區域不施加力之方式對半導體晶圓進行刻劃之刻劃用治具、使用其之刻劃方法及分斷方法。 The present invention has been made in view of such a problem, and an object thereof is to provide a stencil for marking a semiconductor wafer so as not to apply a force to a functional region of a semiconductor wafer, and to use the same Scoring method and breaking method.
為了解決該課題,本發明之脆性材料基板之刻劃方法,係對一面係具有於縱方向及橫方向排列地形成之多個功能區域之功能面、且另一面係基板面之脆性材料基板進行刻劃之刻劃方法,係使用在與該脆性材 料基板之基板面之格子狀之刻劃預定線為相同間距之格子狀之區域之各個之中心位置形成有較該功能區域為大之保護孔之平板狀之刻劃用治具,以該脆性材料基板之功能區域被包含於該刻劃用治具之保護孔之方式使脆性材料基板之功能面與該刻劃用治具接觸,且從該脆性材料基板之基板面,沿著該刻劃預定線呈格子狀地形成刻劃線。 In order to solve this problem, the method for scribing a brittle material substrate according to the present invention is to perform a functional material having a plurality of functional regions formed in a vertical direction and a lateral direction, and a brittle material substrate on the other substrate surface. The scribing method is used in the brittle material The scribe line of the substrate surface of the substrate surface is a flat-shaped knives having a protective hole larger than the functional area at a center position of each of the lattice-shaped regions of the same pitch, and the brittleness is formed The functional area of the material substrate is included in the protective hole of the scribing tool such that the functional surface of the brittle material substrate is in contact with the scoring jig, and the scribing from the substrate surface of the brittle material substrate The predetermined line forms a score line in a lattice shape.
為了解決該課題,本發明之刻劃用治具,係對一面係具有於縱方向及橫方向排列地形成之多個功能區域之功能面、且另一面係基板面之脆性材料基板進行刻劃之刻劃用治具,且係平板狀,具有設置在與該脆性材料基板之格子狀之刻劃預定線為相同間距之區域之各個之中心位置之較該功能區域為大之保護孔。 In order to solve this problem, the jig for scribing of the present invention is characterized in that a functional surface having a plurality of functional regions formed in a longitudinal direction and a lateral direction is formed, and a brittle material substrate on the other surface of the substrate is scribed. The jig is used in the form of a flat plate, and has a protective hole which is larger than the functional region at a central position of each of the regions which are at the same pitch as the predetermined line of the lattice-shaped sculpt of the brittle material substrate.
此處,亦可進一步具有以該脆性材料基板之功能面之功能區域被包含於該各個保護孔之方式保持該脆性材料基板之複數個保持具。 Here, a plurality of holders for holding the brittle material substrate such that the functional regions of the functional surfaces of the brittle material substrate are included in the respective protective holes may be further provided.
為了解決該課題,本發明之脆性材料基板之分斷方法,係對一面係具有於縱方向及橫方向排列地形成之多個功能區域之功能面、且另一面係基板面之脆性材料基板進行刻劃、分斷之分斷方法,且係使用在與該脆性材料基板之基板面之格子狀之刻劃預定線為相同間距之格子狀之區域之各個之中心位置形成有較該功能區域為大之保護孔之平板狀之刻劃用治具,以該脆性材料基板之功能區域被包含於該刻劃用治具之保護孔之方式使脆性材料基板之功能面與該刻劃用治具接觸,且從該脆性材料基板之基板面,沿著該刻劃預定線呈格子狀地形成刻劃線,使該經刻劃之脆性材料基板反轉,沿著所形成之刻劃線進行裂斷而藉此進行分斷。 In order to solve the problem, the method for dividing a brittle material substrate according to the present invention is to perform a functional material having a plurality of functional regions formed in a vertical direction and a lateral direction, and a brittle material substrate on the other substrate surface. The method of dividing and dividing the partitioning method is formed by using a central portion of each of the grid-shaped regions having the same pitch as the predetermined line of the grid-like surface of the substrate surface of the brittle material substrate. The flat-shaped sculpt of the protective hole of the large protective hole is such that the functional area of the brittle material substrate is included in the protective hole of the scribing tool to make the functional surface of the brittle material substrate and the scribing tool Contacting, and forming a score line in a lattice shape along the planned surface of the brittle material substrate in a lattice shape, inverting the scored brittle material substrate, and cracking along the formed score line Break and use this to break.
根據具有如此特徵之本發明,由於以刻劃用治具之保護孔與 脆性材料基板之功能區域相對應之方式使其定位並進行刻劃,因此亦於刻劃時功能區域與治具或平台不接觸。因此,可在功能區域不損傷之情況下,對脆性材料基板沿著刻劃線進行刻劃。此外,使以如此方式刻劃之脆性材料基板反轉並進行裂斷,藉此可在不損傷功能面之情況下進行分斷。 According to the invention having such a feature, since the protective hole of the jig is used for scribing The functional area of the brittle material substrate is positioned and scored in a corresponding manner, so that the functional area is not in contact with the fixture or platform during scoring. Therefore, the brittle material substrate can be scored along the score line without damage to the functional area. Further, the brittle material substrate thus scribed in this manner is reversed and cracked, whereby the breaking can be performed without damaging the functional surface.
10‧‧‧半導體晶圓 10‧‧‧Semiconductor wafer
10A‧‧‧功能面 10A‧‧‧ functional surface
10B‧‧‧基板面 10B‧‧‧ substrate surface
11‧‧‧功能區域 11‧‧‧ functional area
Sx1~Sxm,Sy1~Syn‧‧‧刻劃預定線 S x1 ~S xm ,S y1 ~S yn ‧‧‧Scratch line
20‧‧‧刻劃用治具 20‧‧‧Scratch
21‧‧‧保護孔 21‧‧‧Protection hole
22-1~22-4‧‧‧保持具 22-1~22-4‧‧‧Holding
30‧‧‧平台 30‧‧‧ platform
31‧‧‧刻劃刀輪 31‧‧‧Scratch cutter wheel
圖1,係表示習知之半導體晶圓之刻劃時之狀態之剖面圖。 Figure 1 is a cross-sectional view showing a state in which a conventional semiconductor wafer is scribed.
圖2,係表示本發明之實施形態之成為刻劃對象之半導體晶圓之一例之圖式。 Fig. 2 is a view showing an example of a semiconductor wafer to be scribed as an embodiment of the present invention.
圖3,係表示本發明之實施形態之於刻劃時所使用之刻劃用治具之前視圖及放大一點鏈線之部分A之剖面圖。 Fig. 3 is a cross-sectional view showing a front view of the jig for use in scribing and a portion A of amplifying a chain line in the embodiment of the present invention.
圖4,係表示使半導體基板定位於刻劃用治具之狀態之前視圖。 Fig. 4 is a front view showing a state in which a semiconductor substrate is positioned in a jig for scoring.
圖5,係表示在該實施形態中使用刻劃治具對半導體晶圓進行刻劃之狀態之剖面圖。 Fig. 5 is a cross-sectional view showing a state in which a semiconductor wafer is scribed by using a dicing jig in the embodiment.
接著,針對本發明之實施形態進行說明。在該實施形態之半導體中,將成為裂斷對象之基板設為矽半導體晶圓。圖2(a)係表示大致圓形之矽半導體晶圓10之功能面,圖2(b)係表示其背面即基板側之面。在半導體晶圓10之製造步驟中,於功能面10A,沿著與X軸、Y軸平行之線縱橫地成為列而呈格子狀地形成有多個功能區域11。該功能區域11,一般係以一定之間距隔個等間隔設置,例如係裝入有機械構成元件、感應器、致動器等之MEMS功能區域。而且,就各功能區域進行分斷而成為半導體晶片, 因此如圖2(b)所示,於未形成有功能區域之基板側之面10B以一點鏈線表示般,藉由刻劃裝置而於縱方向形成刻劃預定線Sy1~Syn,於橫方向形成刻劃預定線Sx1~Sxm。該等之刻劃預定線係格子狀,且於其間形成多個長方形之區域。而且,在功能面10A側於該長方形之區域之中央分別配置有功能區域11。 Next, an embodiment of the present invention will be described. In the semiconductor of this embodiment, the substrate to be cracked is a germanium semiconductor wafer. 2(a) shows the functional surface of the substantially circular germanium semiconductor wafer 10, and FIG. 2(b) shows the surface on the back side, that is, the substrate side. In the manufacturing process of the semiconductor wafer 10, a plurality of functional regions 11 are formed in a lattice shape along the line parallel to the X-axis and the Y-axis on the functional surface 10A. The functional regions 11 are generally disposed at equal intervals between certain distances, for example, MEMS functional regions in which mechanical components, inductors, actuators, and the like are incorporated. Further, since each functional region is divided into semiconductor wafers, as shown in FIG. 2(b), the surface 10B on the substrate side where the functional region is not formed is indicated by a dotted line, and is thus used by the scribing device. The scribed lines S y1 to S yn are formed in the longitudinal direction, and the scribe lines S x1 to S xm are formed in the lateral direction. The scribed lines are formed in a lattice shape, and a plurality of rectangular regions are formed therebetween. Further, a functional area 11 is disposed on the functional surface 10A side in the center of the rectangular region.
在本實施形態中,在對半導體晶圓10進行刻劃時使用刻劃用之治具20。該刻劃用治具20,如於圖3(a)表示前視圖、於圖3(b)以A表示之區域之放大剖面圖般,係正方形之平板之金屬製治具,例如將厚度設成數mm左右。該治具20於與包含半導體晶圓10之各功能區域之區域相對應之位置,沿著x方向及y方向之線縱橫地使其排列地形成有多個長方形之保護孔21。該保護孔21,為了在刻劃時不對半導體晶圓10之功能區域11施加力,而設定成較功能區域11為大,此處設為貫通孔。 In the present embodiment, the jig 20 for scribing is used when scribing the semiconductor wafer 10. The scoring jig 20 is a metal jig of a square flat plate as shown in the front view of FIG. 3(a) and the enlarged cross-sectional view of the area indicated by A in FIG. 3(b), for example, the thickness is set. It is about a few mm. The jig 20 is formed with a plurality of rectangular protective holes 21 arranged in a row along the x-direction and the y-direction along a line corresponding to each of the functional regions including the semiconductor wafer 10. The protective hole 21 is set to be larger than the functional region 11 so as not to apply a force to the functional region 11 of the semiconductor wafer 10 at the time of scribing, and is referred to as a through hole.
此外,如圖3所示,於治具20之一面,沿著其周圍之邊於4個部位設置有基板固定用之保持具。保持具22-1~22-4,如圖4所示,係於治具20安裝有半導體晶圓10時,保持半導體晶圓10之周圍並定位,且係用以不使半導體晶圓10移動之保持具。保持具22-1~22-4,如圖3(b)所示般,亦可係剖面為L字形者,此外,亦可由具有彈性之構件構成。 Further, as shown in FIG. 3, on one surface of the jig 20, a holder for fixing a substrate is provided at four locations along the periphery thereof. The holders 22-1 to 22-4, as shown in FIG. 4, are held around the semiconductor wafer 10 and positioned when the fixture 20 is mounted with the semiconductor wafer 10, and are used to prevent the semiconductor wafer 10 from moving. The holder. The holders 22-1 to 22-4 may have an L-shaped cross section as shown in Fig. 3(b), or may be formed of a member having elasticity.
此外,在使用刻劃用治具20對半導體晶圓10進行刻劃之情形,將刻劃用治具20配置於未圖示之刻劃裝置之平台上。而且,如圖4所示般,將半導體晶圓10之功能面10A以與刻劃用治具20接觸之方式載置,且以半導體晶圓10之功能區域11完全地包含於刻劃用治具20之保護孔21之方式進行定位。而且,藉由保持具22-1~22-4,半導體晶圓10以不位移之 方式正確地進行定位。圖5,係以如此方式配置時之剖面圖,所有之功能區域11成為與保護孔21相對應之位置,使得未與刻劃用治具20直接接觸。刻劃裝置之平台亦可為一般之平台,此外,亦可為藉由吸引空氣而保持治具或半導體晶圓之吸附平台。 Further, in the case where the semiconductor wafer 10 is scribed using the scribing jig 20, the scribing jig 20 is placed on a platform of a scribing device (not shown). Further, as shown in FIG. 4, the functional surface 10A of the semiconductor wafer 10 is placed in contact with the scribing jig 20, and the functional region 11 of the semiconductor wafer 10 is completely included in the scribing treatment. The positioning is performed in the manner of a protective hole 21 of 20. Moreover, by holding the holders 22-1~22-4, the semiconductor wafer 10 is not displaced. The way to position correctly. 5 is a cross-sectional view in such a manner that all of the functional regions 11 become positions corresponding to the protective holes 21 so as not to be in direct contact with the scoring jig 20. The platform of the scoring device can also be a general platform, and can also be an adsorption platform for holding a jig or a semiconductor wafer by attracting air.
如此,在進行定位之後,一旦藉由刻劃裝置於基板面10B使刻劃刀輪31轉動並進行刻劃,則如圖5所示般,雖對半導體晶圓10施加負載,但由於在與功能區域11相對應之部分設置有保護孔21,因此功能區域11亦在刻劃時不會有產生損傷之情況。如此,藉由對半導體晶圓10沿著刻劃預定線Sx1~Sxm,Sy1~Syn進行刻劃,可形成刻劃線。 In this manner, after the positioning is performed, once the scribing cutter wheel 31 is rotated and scored on the substrate surface 10B by the scribing device, as shown in FIG. 5, although a load is applied to the semiconductor wafer 10, The corresponding portion of the functional area 11 is provided with a protective hole 21, so that the functional area 11 is also not damaged when it is scored. Thus, the scribe line can be formed by scribing the semiconductor wafer 10 along the scribed lines S x1 to S xm , S y1 to S yn .
然後,使半導體晶圓10反轉,藉由未圖示之裂斷裝置沿著所有之刻劃線進行裂斷。據此,可分斷成分別包含功能區域之多個MEMS晶片。 Then, the semiconductor wafer 10 is reversed, and is broken along all the scribe lines by a cracking device (not shown). Accordingly, a plurality of MEMS wafers each containing a functional region can be separated.
此外,在該實施形態中,雖可將治具20之多個保護孔21設成貫通孔而保護半導體晶圓之功能區域11,但若於刻劃時半導體晶圓10之功能區域11未與治具20直接接觸即可,因此亦可為非貫通孔,而設成任意之深度之孔。 Further, in this embodiment, the plurality of protective holes 21 of the jig 20 may be provided as through holes to protect the functional region 11 of the semiconductor wafer. However, if the functional region 11 of the semiconductor wafer 10 is not scribed at the time of scribing The jig 20 can be directly contacted, and therefore can be a non-through hole, and can be set to a hole of any depth.
此外,在該實施形態中,於刻劃用治具設有L字狀之保持具。但若可將半導體晶圓之功能區域正確地定位在刻劃用治具之保護孔且予以保持即可,並未限定於此形狀。此外,平台係吸附平台,並在可藉由吸引空氣透過保護孔而確實地吸附半導體晶圓並予以固定之情形下,亦可不設置保持具。此外,即使是一般之平台,若在定位於治具20之後,以保護帶材等保持半導體晶圓之周圍,則亦可不一定要設置保持具。 Further, in this embodiment, the holder for scoring is provided with an L-shaped holder. However, the functional area of the semiconductor wafer can be accurately positioned and held by the protective hole of the jig, and is not limited to this shape. Further, the platform is an adsorption platform, and in the case where the semiconductor wafer can be reliably adsorbed and fixed by sucking air through the protective hole, the holder may not be provided. Further, even in a general platform, if the periphery of the semiconductor wafer is held by the protective tape or the like after being positioned in the jig 20, the holder may not necessarily be provided.
進一步地,在該實施形態中,雖針對作為基板之矽半導體晶圓進行說明,但本發明亦可應用於碳化矽基板(SiC基板)、藍寶石基板、LTCC基板等之各種脆性材料基板。 Further, in this embodiment, the semiconductor wafer as the substrate will be described. However, the present invention is also applicable to various brittle material substrates such as a tantalum carbide substrate (SiC substrate), a sapphire substrate, and an LTCC substrate.
本發明在從應予以保護之功能面之背面對脆性材料基板進行刻劃時,由於可在不損傷功能區域之情況下進行刻劃,因此可很有效果地應用於形成有功能區域之基板之刻劃裝置。 When the brittle material substrate is scribed on the back surface of the functional surface to be protected, the present invention can be applied to the substrate on which the functional region is formed because it can be scribed without damaging the functional region. Scribe device.
10‧‧‧半導體晶圓 10‧‧‧Semiconductor wafer
10A‧‧‧功能面 10A‧‧‧ functional surface
10B‧‧‧基板面 10B‧‧‧ substrate surface
11‧‧‧功能區域 11‧‧‧ functional area
21‧‧‧保護孔 21‧‧‧Protection hole
30‧‧‧平台 30‧‧‧ platform
31‧‧‧刻劃刀輪 31‧‧‧Scratch cutter wheel
Claims (4)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012261825A JP2014107518A (en) | 2012-11-30 | 2012-11-30 | Scribe tool, scribe method and cutting method of fragile material substrate |
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| Publication Number | Publication Date |
|---|---|
| TW201420298A TW201420298A (en) | 2014-06-01 |
| TWI592271B true TWI592271B (en) | 2017-07-21 |
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| TW102121478A TWI592271B (en) | 2012-11-30 | 2013-06-18 | Scratch the brittle substrate with the rule of the substrate, the method of characterization and breaking method |
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| JP (1) | JP2014107518A (en) |
| KR (1) | KR20140070337A (en) |
| CN (1) | CN103847033A (en) |
| TW (1) | TWI592271B (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPS5422759A (en) * | 1977-07-22 | 1979-02-20 | Hitachi Ltd | Handling method for semiconductor wafer |
| JPS639950A (en) * | 1986-06-30 | 1988-01-16 | Nec Kansai Ltd | Method for separating semiconductor element |
| US20020025626A1 (en) * | 1998-05-05 | 2002-02-28 | Sunil Hattangady | Integrated dielectric and method |
| JP4581620B2 (en) * | 2004-10-15 | 2010-11-17 | 株式会社デンソー | Semiconductor device manufacturing jig and semiconductor device manufacturing method |
| CA2490849C (en) * | 2004-12-22 | 2009-12-22 | Ibm Canada Limited - Ibm Canada Limitee | An automated singularization tool for brittle insulating arrays |
| JP2007095780A (en) * | 2005-09-27 | 2007-04-12 | Oki Electric Ind Co Ltd | Semiconductor device manufacturing jig and semiconductor device manufacturing method |
| JP4846411B2 (en) * | 2006-03-30 | 2011-12-28 | 株式会社ディスコ | Semiconductor package jig |
| CN101148244A (en) * | 2007-10-19 | 2008-03-26 | 日月光半导体制造股份有限公司 | Wafer level tool and method for packaging MEMS device |
| CN101685785B (en) * | 2008-09-26 | 2011-11-16 | 日月光半导体制造股份有限公司 | Window platen |
| JP5285736B2 (en) * | 2011-04-06 | 2013-09-11 | 三星ダイヤモンド工業株式会社 | Inner perimeter processing method of brittle material substrate |
| CN202434491U (en) * | 2011-12-31 | 2012-09-12 | 刘胜 | Wafer bonding fixture with bumps |
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| JP2014107518A (en) | 2014-06-09 |
| TW201420298A (en) | 2014-06-01 |
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