TWI591863B - Light-emitting device - Google Patents
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Description
本發明是有關於一種發光裝置,且特別是有關於一種波長轉換層覆蓋出光上表面之發光裝置。 The present invention relates to a light-emitting device, and more particularly to a light-emitting device in which a wavelength conversion layer covers a light upper surface.
傳統的發光裝置包括發光二極體及螢光粉層,其中螢光粉層包覆發光二極體。然而,因為沉澱關係,螢光粉層內螢光粉通常無法均勻覆蓋發光二極體之出光面,如此導致從發光二極體之出光光線無法全部轉換成預設波長,造成發光裝置的出光不均勻的現象。 A conventional light-emitting device includes a light-emitting diode and a phosphor powder layer, wherein the phosphor powder layer covers the light-emitting diode. However, due to the precipitation relationship, the phosphor powder in the phosphor powder layer generally cannot uniformly cover the light-emitting surface of the light-emitting diode, so that the light emitted from the light-emitting diode cannot be completely converted into a predetermined wavelength, thereby causing the light of the light-emitting device not to be emitted. Uniform phenomenon.
本發明係有關於一種發光裝置,一實施例中,可改善發光裝置的出光不均勻的問題。 The present invention relates to a light-emitting device. In one embodiment, the problem of uneven light emission of the light-emitting device can be improved.
根據本發明之一實施例,提出一種發光裝置。發光裝置包括一基板、一發光元件及一波長轉換層。發光元件設於基板上且具有一厚度Tc、一出光角度θ及一出光上表面。波長轉換層設於出光上表面上方且具有一寬度Wp。厚度Tc、出光角度θ及寬度Wp的關係滿足:Wp2×Tc×tan(θ/2)。 According to an embodiment of the invention, a lighting device is proposed. The light emitting device comprises a substrate, a light emitting element and a wavelength conversion layer. The light emitting element is disposed on the substrate and has a thickness Tc, a light exiting angle θ, and a light emitting upper surface. The wavelength conversion layer is disposed above the upper surface of the light exit and has a width Wp. The relationship between the thickness Tc, the light exit angle θ, and the width Wp is satisfied: Wp 2 × Tc × tan (θ/2).
根據本發明另一實施例,提出一種發光裝置,其中 波長轉換層的中心點對準於發光元件的中心點。 According to another embodiment of the present invention, a light emitting device is provided, wherein The center point of the wavelength conversion layer is aligned with the center point of the light emitting element.
根據本發明另一實施例,提出一種發光裝置,其中整個波長轉換層位於發光元件的出光上表面上方。 According to another embodiment of the present invention, a light emitting device is proposed in which the entire wavelength conversion layer is located above the light outgoing upper surface of the light emitting element.
根據本發明另一實施例,提出一種發光裝置,其中發光元件更具有一出光側面,波長轉換層覆蓋發光元件的出光上表面及至少一部分出光側面。 According to another embodiment of the present invention, a light emitting device is provided, wherein the light emitting element further has a light emitting side surface, and the wavelength converting layer covers the light emitting upper surface and at least a portion of the light emitting side surface of the light emitting element.
根據本發明另一實施例,提出一種發光裝置,其中波長轉換層至少覆蓋出光側面之被出光角度涵蓋到的部分。 According to another embodiment of the present invention, a light-emitting device is proposed in which a wavelength conversion layer covers at least a portion of a light-side side from which a light-emitting angle is covered.
根據本發明另一實施例,提出一種發光裝置,其中波長轉換層的外輪廓係平面、曲面或其組合。 According to another embodiment of the present invention, a light emitting device is proposed in which the outer contour of the wavelength conversion layer is a plane, a curved surface, or a combination thereof.
根據本發明另一實施例,提出一種發光裝置,發光裝置更包括一透光層。透光層設置於波長轉換層上,且波長轉換層位於透光層與發光元件之間。 According to another embodiment of the present invention, a light emitting device is further provided, the light emitting device further comprising a light transmissive layer. The light transmissive layer is disposed on the wavelength conversion layer, and the wavelength conversion layer is located between the light transmissive layer and the light emitting element.
根據本發明另一實施例,提出一種發光裝置。發光裝置更包括一透光層。透光層之至少一部分形成於波長轉換層與發光元件之出光上表面之間。 According to another embodiment of the invention, a lighting device is proposed. The light emitting device further includes a light transmissive layer. At least a portion of the light transmissive layer is formed between the wavelength conversion layer and the light outgoing upper surface of the light emitting element.
根據本發明另一實施例,提出一種發光裝置,其中發光元件更具有一出光側面,透光層包覆發光元件之出光上表面及出光側面。 According to another embodiment of the present invention, a light emitting device is provided, wherein the light emitting element further has a light emitting side surface, and the light transmitting layer covers the light emitting upper surface and the light emitting side surface of the light emitting element.
根據本發明另一實施例,提出一種發光裝置,其中發光元件的折射率大於透光層的折射率,且透光層的折射率大於波長轉換層的折射率。 According to another embodiment of the present invention, a light emitting device is proposed in which a refractive index of a light emitting element is greater than a refractive index of a light transmitting layer, and a refractive index of the light transmitting layer is greater than a refractive index of the wavelength conversion layer.
根據本發明另一實施例,提出一種發光裝置,其中波長轉換層包括一第一波長轉換層及一第二波長轉換層。第二波長轉換層設置於第一波長轉換層上,使第一波長轉換層位於第二波長轉換層與發光元件之間,其中,第一波長轉換層與第二波長轉換層之間具有一界面。 According to another embodiment of the present invention, a light emitting device is provided, wherein the wavelength conversion layer comprises a first wavelength conversion layer and a second wavelength conversion layer. The second wavelength conversion layer is disposed on the first wavelength conversion layer such that the first wavelength conversion layer is located between the second wavelength conversion layer and the light emitting element, wherein the first wavelength conversion layer and the second wavelength conversion layer have an interface therebetween .
根據本發明另一實施例,提出一種發光裝置,其中發光元件更具有一出光側面,第二波長轉換層包覆整個第一波長轉換層,且包覆發光元件之出光上表面及出光側面。 According to another embodiment of the present invention, a light emitting device is provided, wherein the light emitting element further has a light emitting side surface, and the second wavelength converting layer covers the entire first wavelength converting layer and covers the light emitting upper surface and the light emitting side surface of the light emitting element.
100、200、300、400、500、600、700、800、900‧‧‧發光裝置 100, 200, 300, 400, 500, 600, 700, 800, 900‧‧‧ illuminating devices
110‧‧‧基板 110‧‧‧Substrate
120‧‧‧發光元件 120‧‧‧Lighting elements
120s‧‧‧出光側面 120s‧‧‧light side
120u‧‧‧出光上表面 120u‧‧‧Lighting upper surface
120s1‧‧‧部分 Section 120s1‧‧‧
130‧‧‧波長轉換層 130‧‧‧wavelength conversion layer
130b、831b‧‧‧下表面 130b, 831b‧‧‧ lower surface
130u‧‧‧外輪廓 130u‧‧‧Outer contour
540‧‧‧透光層 540‧‧‧Transparent layer
541‧‧‧第一部分 541‧‧‧Part 1
542‧‧‧第二部分 542‧‧‧Part II
831‧‧‧第一波長轉換層 831‧‧‧First wavelength conversion layer
8311‧‧‧第一色光螢光顆粒 8311‧‧‧First color light fluorescent particles
832‧‧‧第二波長轉換層 832‧‧‧second wavelength conversion layer
8321‧‧‧第二色光螢光顆粒 8321‧‧‧Second color light fluorescent particles
8322‧‧‧第一部分 8322‧‧‧Part 1
8323‧‧‧第二部分 8323‧‧‧Part II
C1、C2‧‧‧中心 C1, C2‧‧‧ Center
L1‧‧‧光線 L1‧‧‧Light
n1、n2、n3‧‧‧折射率 N1, n2, n3‧‧‧ refractive index
P1、P2‧‧‧曲線 P1, P2‧‧‧ curve
S1‧‧‧橫切面 S1‧‧‧ cross section
S2‧‧‧界面 S2‧‧‧ interface
Tc‧‧‧厚度 Tc‧‧‧ thickness
Wp‧‧‧寬度 Wp‧‧‧Width
θ‧‧‧出光角度 θ‧‧‧Lighting angle
第1圖繪示依照本發明一實施例之發光裝置的剖視圖。 1 is a cross-sectional view of a light emitting device in accordance with an embodiment of the present invention.
第2圖繪示依照本發明另一實施例之發光裝置的剖視圖。 2 is a cross-sectional view of a light emitting device in accordance with another embodiment of the present invention.
第3圖繪示依照本發明另一實施例之發光裝置的剖視圖。 3 is a cross-sectional view of a light emitting device in accordance with another embodiment of the present invention.
第4圖繪示依照本發明另一實施例之發光裝置的剖視圖。 4 is a cross-sectional view of a light emitting device in accordance with another embodiment of the present invention.
第5圖繪示依照本發明另一實施例之發光裝置的剖視圖。 Figure 5 is a cross-sectional view of a light emitting device in accordance with another embodiment of the present invention.
第6圖繪示依照本發明另一實施例之發光裝置的剖視圖。 Figure 6 is a cross-sectional view showing a light emitting device in accordance with another embodiment of the present invention.
第7圖繪示依照本發明另一實施例之發光裝置的剖視圖。 Figure 7 is a cross-sectional view showing a light emitting device in accordance with another embodiment of the present invention.
第8圖繪示依照本發明另一實施例之發光裝置的剖視圖。 Figure 8 is a cross-sectional view showing a light emitting device in accordance with another embodiment of the present invention.
第9圖繪示依照本發明另一實施例之發光裝置的剖視圖。 Figure 9 is a cross-sectional view showing a light emitting device in accordance with another embodiment of the present invention.
第10圖繪示依照本發明實施例之發光裝置的光學特性圖。 Fig. 10 is a view showing optical characteristics of a light-emitting device according to an embodiment of the present invention.
第1圖繪示依照本發明一實施例之發光裝置的剖視圖。發 光裝置100包括基板110、發光元件120及波長轉換層130。 1 is a cross-sectional view of a light emitting device in accordance with an embodiment of the present invention. hair The optical device 100 includes a substrate 110, a light emitting element 120, and a wavelength conversion layer 130.
發光元件120設置於基板110上。發光元件120具有一厚度Tc、一出光角度θ及一出光上表面120u。 The light emitting element 120 is disposed on the substrate 110. The light emitting element 120 has a thickness Tc, a light exit angle θ, and a light exit upper surface 120u.
波長轉換層130設於發光元件120的出光上表面120u上方且具有一寬度Wp。發光元件120的厚度Tc、發光元件120的出光角度θ及波長轉換層130的寬度Wp之間的關係滿足關係式(1)
由於關係式(1)的設計,使發光元件120在出光角度θ範圍內所發射的光線L都可通過波長轉換層130而轉換成具有預設波長之光線後而出光。 Due to the design of the relation (1), the light L emitted by the light-emitting element 120 in the range of the light-emitting angle θ can be converted into light having a predetermined wavelength by the wavelength conversion layer 130 to emit light.
如第1圖所示,波長轉換層130的中心C1對準發光元件120的中心C2,在此設計下,波長轉換層130的寬度Wp只需符合關係式(1)中的最小寬度Wp(即Wp=2×Tc×tan(θ/2)),即可讓出光角度θ內的出光光線L都能經過波長轉換層130的轉換,如此可節省波長轉換層130的用料。進一步地說,當波長轉換層130的中心C1對準發光元件120的中心C2,且波長轉換層130的寬度Wp=2×Tc×tan(θ/2),波長轉換層130相對於中心C1呈對稱結構,因而可讓出光角度+θ/2及-θ/2範圍內的出光光線L都能經過波長轉換層130的轉換。 As shown in FIG. 1, the center C1 of the wavelength conversion layer 130 is aligned with the center C2 of the light-emitting element 120. Under this design, the width Wp of the wavelength conversion layer 130 only needs to conform to the minimum width Wp in the relation (1) (ie, Wp=2×Tc×tan(θ/2)), so that the light outgoing light L in the light exit angle θ can be converted by the wavelength conversion layer 130, so that the material of the wavelength conversion layer 130 can be saved. Further, when the center C1 of the wavelength conversion layer 130 is aligned with the center C2 of the light-emitting element 120, and the width Wp of the wavelength conversion layer 130 is 2×Tc×tan(θ/2), the wavelength conversion layer 130 is opposite to the center C1. The symmetrical structure allows the light outgoing rays L in the range of the light extraction angles +θ/2 and -θ/2 to be converted by the wavelength conversion layer 130.
本實施例中,整個波長轉換層130位於發光元件120的出光上表面120u上方。然本發明實施例不限於此,以下係舉例說明。 In this embodiment, the entire wavelength conversion layer 130 is located above the light outgoing upper surface 120u of the light emitting element 120. The embodiments of the present invention are not limited thereto, and the following are exemplified.
第2圖繪示依照本發明另一實施例之發光裝置的剖視圖。發光裝置200包括基板110、發光元件120及波長轉換層130。與上述實施例之發光裝置100不同的是,本實施例之發光元件120更具有一出光側面120s,波長轉換層130覆蓋發光元件120的出光上表面120u及出光側面120s的一部分。較佳但非限定地,波長轉換層130至少覆蓋出光側面120s之被出光角度θ涵蓋到的部分120s1。 2 is a cross-sectional view of a light emitting device in accordance with another embodiment of the present invention. The light emitting device 200 includes a substrate 110, a light emitting element 120, and a wavelength conversion layer 130. Different from the light-emitting device 100 of the above embodiment, the light-emitting element 120 of the present embodiment further has a light-emitting side surface 120s, and the wavelength conversion layer 130 covers a portion of the light-emitting upper surface 120u and the light-emitting side surface 120s of the light-emitting element 120. Preferably, but not limited to, the wavelength conversion layer 130 covers at least the portion 120s1 covered by the light extraction angle θ of the light side surface 120s.
第3圖繪示依照本發明另一實施例之發光裝置的剖視圖。發光裝置300包括基板110、發光元件120及波長轉換層130。與上述實施例之發光裝置200不同的是,本實施例之波長轉換層130覆蓋發光元件120的出光上表面120u及整個出光側面120s。 3 is a cross-sectional view of a light emitting device in accordance with another embodiment of the present invention. The light emitting device 300 includes a substrate 110, a light emitting element 120, and a wavelength conversion layer 130. Different from the light-emitting device 200 of the above embodiment, the wavelength conversion layer 130 of the present embodiment covers the light-emitting upper surface 120u of the light-emitting element 120 and the entire light-emitting side surface 120s.
上述實施例中,波長轉換層130的外輪廓係以平面為例說明,然波長轉換層130的外輪廓亦可為曲面或曲面與平面的組合,以下係舉例說明。 In the above embodiment, the outer contour of the wavelength conversion layer 130 is exemplified by a plane. However, the outer contour of the wavelength conversion layer 130 may also be a curved surface or a combination of a curved surface and a plane, which is exemplified below.
第4圖繪示依照本發明另一實施例之發光裝置的剖視圖。發光裝置400包括基板110、發光元件120及波長轉換層130。與上述實施例之發光裝置100、200及300不同的是,本實施例之波長轉換層130具有一外輪廓130u,其為曲面,如弧面。另一實施例中,波長轉換層130之外輪廓130u亦可為曲面與平面的組合。 4 is a cross-sectional view of a light emitting device in accordance with another embodiment of the present invention. The light emitting device 400 includes a substrate 110, a light emitting element 120, and a wavelength conversion layer 130. Different from the light-emitting devices 100, 200 and 300 of the above embodiment, the wavelength conversion layer 130 of the present embodiment has an outer contour 130u which is a curved surface such as a curved surface. In another embodiment, the outer contour 130u of the wavelength conversion layer 130 may also be a combination of a curved surface and a plane.
本實施例中,波長轉換層130的寬度Wp定義為波長轉換層130沿一橫切面S1之剖面形狀的外輪廓寬度,此處的 橫切面S1與出光上表面120u共面。本實施例中,波長轉換層130覆蓋發光元件120的整個出光側面120s;另一實施例中,第4圖之波長轉換層130覆蓋發光元件120的一部分出光側面120s或完全不覆蓋發光元件120之出光側面120s。 In this embodiment, the width Wp of the wavelength conversion layer 130 is defined as the outer contour width of the cross-sectional shape of the wavelength conversion layer 130 along a transverse plane S1, where The cross section S1 is coplanar with the light exit upper surface 120u. In this embodiment, the wavelength conversion layer 130 covers the entire light-emitting side 120s of the light-emitting element 120. In another embodiment, the wavelength conversion layer 130 of FIG. 4 covers a portion of the light-emitting side 120s of the light-emitting element 120 or does not cover the light-emitting element 120 at all. The light side is 120s.
第5圖繪示依照本發明另一實施例之發光裝置的剖視圖。發光裝置500包括基板110、發光元件120、波長轉換層130及透光層540。發光元件120設於基板110之出光上表面120u上方,而透光層540設置於波長轉換層130上方,且波長轉換層130位於透光層540與發光元件120之間。藉由設計透光層540的透光率及/或折射率,可提升發光裝置500的出光效率。 Figure 5 is a cross-sectional view of a light emitting device in accordance with another embodiment of the present invention. The light emitting device 500 includes a substrate 110, a light emitting element 120, a wavelength conversion layer 130, and a light transmissive layer 540. The light-emitting element 120 is disposed above the light-emitting upper surface 120u of the substrate 110, and the light-transmitting layer 540 is disposed above the wavelength conversion layer 130, and the wavelength conversion layer 130 is located between the light-transmitting layer 540 and the light-emitting element 120. The light extraction efficiency of the light-emitting device 500 can be improved by designing the light transmittance and/or the refractive index of the light-transmitting layer 540.
第6圖繪示依照本發明另一實施例之發光裝置的剖視圖。發光裝置600包括基板110、發光元件120、波長轉換層130及透光層540。本實施例之透光層540包括第一部分541及第二部分542,其中第一部分541形成於發光元件120與波長轉換層130之間,以覆蓋發光元件120的出光上表面120u與波長轉換層130的下表面130b,而第二部分542包覆波長轉換層130之下表面130b以外的部分及發光元件120之出光側面120s。透光層540包覆整個波長轉換層130及部分的發光元件120。 Figure 6 is a cross-sectional view showing a light emitting device in accordance with another embodiment of the present invention. The light emitting device 600 includes a substrate 110, a light emitting element 120, a wavelength conversion layer 130, and a light transmissive layer 540. The light-transmitting layer 540 of the present embodiment includes a first portion 541 and a second portion 542. The first portion 541 is formed between the light-emitting element 120 and the wavelength conversion layer 130 to cover the light-emitting upper surface 120u and the wavelength conversion layer 130 of the light-emitting element 120. The lower surface 130b covers the portion other than the lower surface 130b of the wavelength conversion layer 130 and the light exiting surface 120s of the light emitting element 120. The light transmissive layer 540 covers the entire wavelength conversion layer 130 and a portion of the light emitting elements 120.
第7圖繪示依照本發明另一實施例之發光裝置的剖視圖。發光裝置700包括基板110、發光元件120、波長轉換層130及透光層540。本實施例之整個透光層540形成於波長轉換層130與發光元件120之出光上表面120u之間。此外,發光元件120具 有折射率n1,透光層540具有折射率n2,而波長轉換層130具有折射率n3,其中折射率n1、n2及n3滿足關係式(2)。由於折射率n1、n2與n3由大至小漸進變化,使出光的折射角度由小至大漸進變化,進而使光線的發散可以較均勻。 Figure 7 is a cross-sectional view showing a light emitting device in accordance with another embodiment of the present invention. The light emitting device 700 includes a substrate 110, a light emitting element 120, a wavelength conversion layer 130, and a light transmissive layer 540. The entire light transmissive layer 540 of the present embodiment is formed between the wavelength conversion layer 130 and the light outgoing upper surface 120u of the light emitting element 120. In addition, the light emitting element 120 has There is a refractive index n1, the light transmissive layer 540 has a refractive index n2, and the wavelength conversion layer 130 has a refractive index n3, wherein the refractive indices n1, n2, and n3 satisfy the relationship (2). Since the refractive indices n1, n2 and n3 are gradually changed from large to small, the refractive angle of the light is gradually changed from small to large, so that the divergence of the light can be relatively uniform.
n1>n2>n3...................................(2) N1>n2>n3.............................(2)
一實施例中,發光元件120之折射率n1約1.7,透光層540之折射率n2約1.6,而波長轉換層130之折射率n3約1.53。就材料而言,透光層540的材料包括玻璃、聚碳酸酯(Polycarbonate,PC)、聚甲基丙烯酸甲酯(Polymethylmethacrylate,PMMA)、甲基丙烯酸甲脂聚苯乙烯(MS)或聚苯乙烯(PS)或矽膠,而波長轉換層130包括聚合物及螢光粉,其中聚合物例如是矽膠。然而,只要發光元件120、透光層540與波長轉換層130的材料選用可符合上關係式(2)的折射率關係即可,本發明實施例並不限定發光元件120、透光層540與波長轉換層130的材料選用。 In one embodiment, the refractive index n1 of the light-emitting element 120 is about 1.7, the refractive index n2 of the light-transmitting layer 540 is about 1.6, and the refractive index n3 of the wavelength conversion layer 130 is about 1.53. In terms of materials, the material of the light transmissive layer 540 includes glass, polycarbonate (Polycarbonate, PC), polymethylmethacrylate (PMMA), methyl methacrylate (MS) or polystyrene. (PS) or silicone, and the wavelength conversion layer 130 comprises a polymer and a phosphor, wherein the polymer is, for example, silicone. However, as long as the materials of the light-emitting element 120, the light-transmitting layer 540 and the wavelength conversion layer 130 are selected to conform to the refractive index relationship of the above relationship (2), the embodiment of the present invention does not limit the light-emitting element 120 and the light-transmitting layer 540. The material of the wavelength conversion layer 130 is selected.
第8圖繪示依照本發明另一實施例之發光裝置的剖視圖。發光裝置800包括基板110、發光元件120、第一波長轉換層831及第二波長轉換層832。本實施例中,第一波長轉換層831形成於發光元件120之出光上表面120u上方,而第二波長轉換層832設置於第一波長轉換層831上方,使第一波長轉換層831位於第二波長轉換層832與發光元件120之間。第一波長轉換層831與第二波長轉換層832為二獨立的波長轉換層,使二者結合在一起 後,其間形成一明顯界面S2。 Figure 8 is a cross-sectional view showing a light emitting device in accordance with another embodiment of the present invention. The light emitting device 800 includes a substrate 110, a light emitting element 120, a first wavelength conversion layer 831, and a second wavelength conversion layer 832. In this embodiment, the first wavelength conversion layer 831 is formed above the light-emitting upper surface 120u of the light-emitting element 120, and the second wavelength conversion layer 832 is disposed above the first wavelength conversion layer 831, so that the first wavelength conversion layer 831 is located at the second wavelength conversion layer 831. The wavelength conversion layer 832 is between the light emitting element 120 and the light emitting element 120. The first wavelength conversion layer 831 and the second wavelength conversion layer 832 are two independent wavelength conversion layers, so that the two are combined Thereafter, a distinct interface S2 is formed therebetween.
本實施例將不同色光螢光顆粒分別摻雜於不同的波長轉換層。例如,第一波長轉換層831包含數個第一色光螢光顆粒8311,而第二波長轉換層832包含數個第二色光螢光顆粒8321,其中第一色光螢光顆粒8311與第二色光螢光顆粒8321分別為不同色光螢光顆粒。一實施例中,第一色光螢光顆粒8311及第二色光螢光顆粒8321例如是綠色、紅色或黃色螢光顆粒。若把第一色光螢光顆粒8311及第二色光螢光顆粒8321摻雜於同一波長轉換層,將導致第一色光螢光顆粒8311與第二色光螢光顆粒8321轉換的色光互相吸收,進而導致光轉換效率降低,或需要摻雜更多的螢光顆粒方能轉換成預設色光。由於本實施例為不同色光的螢光顆粒分別摻雜於不同的波長轉換層,因此可避免不同色光的螢光顆粒互相吸收的問題,因而可提升光轉換效率且/或減少摻雜螢光顆粒的用量。 In this embodiment, different color light fluorescent particles are respectively doped to different wavelength conversion layers. For example, the first wavelength conversion layer 831 includes a plurality of first color light fluorescent particles 8311, and the second wavelength conversion layer 832 includes a plurality of second color light fluorescent particles 8321, wherein the first color light fluorescent particles 8311 and the second The colored fluorescent particles 8321 are respectively different colored fluorescent particles. In one embodiment, the first color light fluorescent particles 8311 and the second color light fluorescent particles 8321 are, for example, green, red or yellow fluorescent particles. If the first color light fluorescent particles 8311 and the second color light fluorescent particles 8321 are doped into the same wavelength conversion layer, the color lights converted by the first color light fluorescent particles 8311 and the second color light fluorescent particles 8321 are mutually absorbed. In turn, the light conversion efficiency is lowered, or more fluorescent particles need to be doped to be converted into a preset color light. Since the phosphor particles of different color lights are respectively doped to different wavelength conversion layers in this embodiment, the problem that the phosphor particles of different color lights absorb each other can be avoided, thereby improving the light conversion efficiency and/or reducing the doped fluorescent particles. The amount used.
第9圖繪示依照本發明另一實施例之發光裝置的剖視圖。發光裝置900包括基板110、發光元件120、第一波長轉換層831及第二波長轉換層832。第二波長轉換層832包覆整個第一波長轉換層831,且包覆發光元件120的出光上表面120u及出光側面120s。進一步來說,與上述實施例之發光裝置800不同的是,本實施例之第二波長轉換層832包括第一部分8322及第二部分8323,其中第一部分8322形成於發光元件120與第一波長轉換層831之間,以覆蓋發光元件120的出光上表面120u與第一波 長轉換層831的下表面831b,而第二部分8323包覆第一波長轉換層831之下表面831b以外的部分及發光元件120之出光側面120s。由於第二部分8323包覆整個出光側面120s,使從出光側面120s任何局部出光的光線L都能經過第二波長轉換層832的轉換。 Figure 9 is a cross-sectional view showing a light emitting device in accordance with another embodiment of the present invention. The light emitting device 900 includes a substrate 110, a light emitting element 120, a first wavelength conversion layer 831, and a second wavelength conversion layer 832. The second wavelength conversion layer 832 covers the entire first wavelength conversion layer 831 and covers the light-emitting upper surface 120u and the light-emitting side surface 120s of the light-emitting element 120. Further, different from the illuminating device 800 of the above embodiment, the second wavelength converting layer 832 of the embodiment includes a first portion 8322 and a second portion 8323, wherein the first portion 8322 is formed on the illuminating element 120 and the first wavelength conversion Between the layers 831 to cover the light-emitting upper surface 120u and the first wave of the light-emitting element 120 The lower surface 831b of the long conversion layer 831, and the second portion 8323 covers a portion other than the lower surface 831b of the first wavelength conversion layer 831 and the light exit side 120s of the light emitting element 120. Since the second portion 8323 covers the entire light-emitting side surface 120s, the light L emitted from any portion of the light-emitting side surface 120s can be converted by the second wavelength conversion layer 832.
第10圖繪示依照本發明實施例之發光裝置的光學特性圖。曲線P1表示習知發光裝置的光學特性曲線,而曲線P2表示上述實施例之發光裝置100的光學特性曲線。相較於曲線P1,由於上式(1)的設計,使本實施例之發光裝置100之出光角度θ範圍內的出光光線L的色溫較均勻,即,從出光角度θ範圍內出光的光線L產生一均勻出光效果。本發明其它實施例之發光裝置亦具有類似發光裝置100的光學特性,容此不再贅述。 Fig. 10 is a view showing optical characteristics of a light-emitting device according to an embodiment of the present invention. The curve P1 represents the optical characteristic curve of the conventional light-emitting device, and the curve P2 represents the optical characteristic curve of the light-emitting device 100 of the above embodiment. Compared with the curve P1, due to the design of the above formula (1), the color temperature of the light-emitting ray L in the range of the light-emitting angle θ of the light-emitting device 100 of the present embodiment is relatively uniform, that is, the light beam L emitted from the light-emitting angle θ. Produces a uniform light output. The illuminating device of other embodiments of the present invention also has optical characteristics similar to those of the illuminating device 100, and will not be described again.
綜上所述,雖然本發明已以較佳實施例揭露如上,然其並非用以限定本發明。本發明所屬技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作各種之更動與潤飾。因此,本發明之保護範圍當視後附之申請專利範圍所界定者為準。 In conclusion, the present invention has been disclosed in the above preferred embodiments, and is not intended to limit the present invention. A person skilled in the art can make various changes and modifications without departing from the spirit and scope of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims.
100‧‧‧發光裝置 100‧‧‧Lighting device
110‧‧‧基板 110‧‧‧Substrate
120‧‧‧發光元件 120‧‧‧Lighting elements
120u‧‧‧出光上表面 120u‧‧‧Lighting upper surface
130‧‧‧波長轉換層 130‧‧‧wavelength conversion layer
C1、C2‧‧‧中心 C1, C2‧‧‧ Center
L‧‧‧光線 L‧‧‧Light
Tc‧‧‧厚度 Tc‧‧‧ thickness
Wp‧‧‧寬度 Wp‧‧‧Width
θ‧‧‧出光角度 θ‧‧‧Lighting angle
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