TWI588945B - Manufacturing device of laminated semiconductor package - Google Patents

Description

Manufacturing device of laminated semiconductor package

The present invention relates to a device for manufacturing a laminated semiconductor package, and more particularly to a method for manufacturing a stacked semiconductor package in which a plurality of semiconductor packages are sequentially stacked in a vertical direction. Device.

In order to expand its capacitance and function, semiconductor components are gradually increasing in integration in a wafer manufacturing process. If the capacitance and function of the semiconductor device are to be expanded on the wafer, a large amount of equipment is required in the wafer manufacturing process and a large cost is required.

On the contrary, if a semiconductor chip is fabricated on a wafer and assembled into a package, a method of integrating two or more semiconductor wafers or two or more semiconductor packages into one body can be used. Equipment investment and cost to expand the capacitance and function of semiconductor components. Therefore, in semiconductor manufacturing, packaging technology is increasingly important as a core technology that ultimately determines the electrical performance, reliability, productivity, and miniaturization of an electronic system.

Recently, many semiconductor companies have applied integrated semiconductor package technology in order to further increase the installation efficiency per unit volume in the packaging process. Typical integrated semiconductor packages include System In Package (SIP), Multi Chip Package (MCP), and Package On Package (POP; hereinafter referred to as " A laminated semiconductor package") or the like. In these integrated semiconductor packages, the stacked semiconductor package is a package in which a plurality of single semiconductor packages that complete a packaging process and an electrical inspection process are integrated. Therefore, assembly is performed by sufficiently checking the electrical function of the single semiconductor package and removing the defective state. Therefore, there is an advantage that electrical defects occurring after assembly into a package-on-package (Package On Package) structure are reduced, and execution can be performed. A single semiconductor package of different functions is fabricated into a semiconductor package.

The laminated semiconductor package is fabricated by a soldering process in which a plurality of single semiconductor packages are stacked and heated to solder the plurality of single semiconductor packages. Above the melting point of the ball. However, there is a problem in that the warpage of the semiconductor package laminated in the high-temperature soldering process causes a defect in the joint portion of the two semiconductor packages; or after the soldering process, the solder ball produces a turtle Crack.

[Previous Technical Literature]

[Patent Literature]

Korean Open Patent Gazette No. 2010-0121231 (2010.11.17.)

Korean Open Patent Gazette No. 2013-0116100 (2013.10.23.)

[Question to be solved by the invention]

The present invention has been made to solve the above-mentioned needs, and an object thereof is to provide a second semiconductor package and a first semiconductor package which can be reduced by a warpage phenomenon of a second semiconductor package or a first semiconductor package. A manufacturing apparatus of a laminated semiconductor package in which the bonding portion is defective or has a problem of cracking.

[Means for solving the problem]

A manufacturing apparatus of a stacked type semiconductor package of the present invention for achieving the object is used for manufacturing a first semiconductor package and a second semiconductor package to pass a package between the first semiconductor package and the second semiconductor package A laminated semiconductor package in which a connection terminal is electrically connected to each other, wherein the manufacturing apparatus of the laminated semiconductor package includes a contact heater capable of being able to be coupled to the second semiconductor package One side of the body is disposed in contact so that the adhesive and the package connection terminal can be heated by the second semiconductor package of the package assembly, the package assembly being in the first semiconductor package The first semiconductor package is interposed between the body and the second semiconductor package to bond the adhesive of the first semiconductor package and the second semiconductor package and the package connection terminal The body is combined with the second semiconductor package; and a controller that pairs the contact heater in the following manner Controlling, that is, maintaining the heating temperature of the contact heater for a fixed time to harden the adhesive in a state where the contact heater is in contact with one surface of the second semiconductor package The curing temperature and the soldering temperature at which the package connection terminals are melted.

[Effects of the Invention]

The manufacturing apparatus of the laminated semiconductor package of the present invention solders the first semiconductor package and the second semiconductor package by using a package connection terminal interposed between the first semiconductor package and the second semiconductor package, while using the first An adhesive between the semiconductor package and the second semiconductor package bonds the first semiconductor package to the second semiconductor package. Therefore, it is possible to manufacture a laminated semiconductor package in which a conventional laminated semiconductor package in which the first semiconductor package and the second semiconductor package are bonded by only the package connection terminal is more robust and structurally superior.

Further, in the apparatus for manufacturing a laminated semiconductor package of the present invention, the second semiconductor package is pressed by the contact heater to harden the adhesive between the first semiconductor package and the second semiconductor package to firmly bond the first semiconductor package. The body and the second semiconductor package can reduce the problem that in the high temperature soldering process, in the high temperature soldering process, the two semiconductor packages are in the warpage due to the warpage of the first semiconductor package or the second semiconductor package The joint portion is defective in the next step; or after the soldering process, cracks are generated at the package connection terminal or the like.

Further, in the apparatus for manufacturing a laminated semiconductor package of the present invention, the temperature of the contact heater is controlled at a high speed in a state where the contact heater is brought into contact with the upper surface of the package assembly, whereby the pair can be quickly and continuously performed. A curing process and a soldering process for interposing the package between the first semiconductor package and the second semiconductor package and the package connection terminal. Therefore, manufacturing time can be shortened and manufacturing efficiency can be improved.

Hereinafter, a manufacturing apparatus of a laminated semiconductor package of the present invention will be described in detail with reference to the drawings.

1 is a side view showing a laminated semiconductor package manufactured by a manufacturing apparatus of a stacked semiconductor package according to an embodiment of the present invention, and FIG. 2 is a schematic view showing a stacked semiconductor package according to an embodiment of the present invention. FIG. 3 is a view showing a configuration of a manufacturing apparatus of a bulk semiconductor device, and FIG. 3 is a view showing a heating unit of the apparatus for manufacturing a laminated semiconductor package shown in FIG. 2 .

As shown in FIG. 1, a manufacturing apparatus 100 for a stacked semiconductor package according to an embodiment of the present invention is used to manufacture a second semiconductor package 30 to be electrically connected to the first semiconductor package 20 through a package connection terminal 34. The stacked semiconductor package 10 is laminated on the first semiconductor package 20. The manufacturing apparatus 100 of the laminated semiconductor package can solve the problem that in the conventional high-temperature soldering process, the two semiconductor packages are in the warpage due to the warpage of the first semiconductor package or the second semiconductor package. The joint portion is defective; or a crack occurs in the solder ball or the like after the soldering process.

Referring to Fig. 1, a laminated semiconductor package 10 manufactured by the apparatus 100 for manufacturing a laminated semiconductor package of the present embodiment includes a first semiconductor package 20, a second semiconductor package 30, and an adhesive layer 40. .

The first semiconductor package 20 includes a first package substrate 21 , a first wafer 22 , an external connection terminal 23 , and a first sealing material 24 . Terminal pads 25 and 26 are provided on the upper surface and the lower surface of the first package substrate 21, respectively. The first wafer 22 is mounted to the first package substrate 21, and is electrically connected to the terminal pad 25 through the wafer connection terminal 27. The external connection terminal 23 is electrically connected to the terminal pad 26 of the first package substrate 21. The external connection terminal 23 is for electrically connecting to an electronic device such as another substrate, and may be formed of a solder ball or the like. Inside the first package substrate 21, a circuit wiring (not shown) that electrically connects the terminal pad 25 and the terminal pad 26 may be provided. The first sealing material 24 is made of an insulating material, and is provided on the upper side of the first package substrate 21 so as to cover the first wafer 22 .

The second semiconductor package 30 includes a second package substrate 31 , second wafers 32 and 33 , a package connection terminal 34 , and a second sealing material 35 . Terminal pads 36 and 37 are provided on the upper surface and the lower surface of the second package substrate 31, respectively. The second wafers 32, 33 are mounted to the second package substrate 31, and are electrically connected to the terminal pads 36 through the wafer connection terminals 38. The package connection terminal 34 is electrically connected to the terminal pad 37 of the second package substrate 31. The package connection terminal 34 is a portion electrically connected to the terminal pad 25 of the first semiconductor package 20, and may be constituted by a solder ball or the like. The first semiconductor package 20 and the second semiconductor package 30 are electrically connected by the package connection terminal 34. The package connection terminal 34 electrically connects the first semiconductor package 20 and the second semiconductor package 30 by a soldering process, while fixing the first semiconductor package 20 and the second semiconductor package 30 in a state of being bonded to each other. Inside the second package substrate 31, a circuit wiring (not shown) that electrically connects the terminal pad 36 and the terminal pad 37 may be provided. The second sealing member 35 is made of an insulating material and is disposed on the upper side of the second package substrate 31 so as to cover the second wafers 32 and 33.

The adhesive layer 40 is interposed between the upper surface of the first sealing material 24 of the first semiconductor package 20 and the second package substrate 31 of the second semiconductor package 30 to form the first semiconductor together with the package connection terminal 34. The package body 20 and the second semiconductor package 30 are bonded to each other. The adhesive layer 40 is formed in such a manner that an adhesive 45 such as an epoxy is hardened in the state of both the first semiconductor package 20 and the second semiconductor package 30. The adhesive layer 40 can be formed at a maximum width corresponding to the width of the upper surface of the first sealing member 24 of the first semiconductor package 20.

As described above, the package connection terminal 34 also bonds the first semiconductor package 20 and the second semiconductor package 30 to each other by a soldering process, but the first semiconductor package 20 and the second semiconductor package are formed of the adhesive layer 40. The bonding area of the body 30 is larger than the bonding area of the first semiconductor package 20 and the second semiconductor package 30 formed by the package connecting terminal 34, and the bonding force of the adhesive layer 40 is also greater than the bonding force of the package connecting terminal 34. . Therefore, the laminated semiconductor package 10 manufactured by the manufacturing apparatus 100 for a laminated semiconductor package of the present invention has a conventional laminated semiconductor package in which the first semiconductor package and the second semiconductor package are bonded by only the package connection terminal. The body is stronger and more structurally superior.

As shown in FIG. 2, the apparatus 100 for manufacturing a laminated semiconductor package of the present embodiment in which the multilayer semiconductor package 10 is manufactured includes a transfer unit 110, a loader 120, an adhesive dispenser 130, The assembly loader 140, the heating unit 150, and the inspection unit 170.

A package assembly 15 or a laminated semiconductor package in which the transfer unit 110 mounts a jigger 115, and the semiconductor package 20, 30, the first semiconductor package 20 and the second semiconductor package 30 are bonded to the pulley 115. Body 10. The transfer unit 110 transfers the carriage 115 along a fixed transfer path, and the loader 120, the adhesive distributor 130, the assembly loader 140, the heating unit 150, and the inspection unit 170 are sequentially disposed in the transfer path of the transfer unit 110. As the transfer unit 110, a transfer unit of various configurations such as a conveyor that can provide a linear transfer path or a turn table that can provide a circular transfer path can be utilized. The pulley 115 can be a pulley of various configurations in which one or more semiconductor packages 20 and 30 can be mounted, such as a fixed type or a separate type. Of course, the pulley 115 may be omitted, and a fixing structure that can stably fix the semiconductor packages 20 and 30 to the transfer unit 110 in a horizontal state may be provided.

The loader 120 picks up the first semiconductor package 20 and loads the pulley 115 onto the transfer unit 110. As the loader 120, a loader that can pick up various structures of the first semiconductor package 20 by various methods such as an adsorption method or a clamping method can be utilized. In the case where the pulley is a separate structure, the loader 120 may also adopt a structure in which the pulley of the first semiconductor package 20 is picked up.

The adhesive dispenser 130 applies an adhesive 45 on the first semiconductor package 20. As the adhesive dispenser 130, an adhesive dispenser of various structures to which the adhesive 45 can be applied can be utilized. As the adhesive 45, various substances having an adhesive force such as an epoxy resin can be used.

The assembly loader 140 picks up the second semiconductor package 30 and bonds it to the first semiconductor package 20, thereby forming the package assembly 15 in which the first semiconductor package 20 and the second semiconductor package 30 are stacked one on another. As the assembly loader 140, an assembly loader of various configurations that can be attached to the first semiconductor package 20 by picking up the second semiconductor package 30 by various methods such as an adsorption method or a clamping method can be used.

2 and 3, the heating unit 150 includes a contact heater 151, a heater cooling unit 158, a lifting mechanism 165, and a controller 169. The controller 169 controls the contact heater 151, the heater cooling unit 158, and the elevating mechanism 165. Such a heating unit 150 can continuously perform a hardening process and a welding process for the package assembly 15 in a state where the contact heater 151 is brought into contact with the package assembly 15.

The contact heater 151 is provided on the upper side of the package assembly 15 so as to be movable up and down so as to be in contact with one surface of the second semiconductor package 30 of the package assembly 15. The contact heater 151 has a contact surface 152 that is in contact with the upper surface of the second sealing material 35 of the second semiconductor package 30. The contact surface 152 is provided with an adsorption hole hole 153 for adsorbing the second semiconductor package 30. The adsorption hole 153 is connected to an air hole 154 provided on one side of a cooling jacket 159 of the heater cooling unit 158. A vacuum pressure supplier (not shown) for supplying a suction force to the adsorption holes 153 is connected to the air holes 154. Of course, the air holes 154 may also be formed to the outer side of the contact heater 151.

The contact heater 151 is in contact with the upper surface of the second sealing material 35 of the second semiconductor package 30 to adsorb the second semiconductor package 30, and the first semiconductor package 20 is passed through the second semiconductor package 30. The adhesive 45 and the package connection terminal 34 between the second semiconductor packages 30 are heated. A temperature sensor 155 is provided in the contact heater 151. The temperature sensor 155 is disposed in contact with the contact heater 151, detects the temperature of the contact heater 151, and transmits this detection information to the controller 169. The contact heater 151 operates by receiving power from the power supply device 156. The controller 169 receives feedback of the heat generation temperature of the contact heater 151 from the temperature sensor 155 to adjust the power supply to the contact heater 151, thereby controlling the heating temperature of the contact heater 151.

As the contact heater 151, a ceramic heater can be used. The ceramic heater usually includes a ceramic substrate, and a resistive heating element embedded in the ceramic substrate or fixed to the ceramic substrate. The heat generated by the resistive heating element due to the excellent thermal conductivity of the ceramic material can be quickly transferred to a target substance disposed adjacent to the ceramic substrate. Needless to say, the contact heater 151 can be used in addition to the ceramic heater, and various contact heaters that can contact the package assembly 15 to heat the adhesive 45 and the package connection terminal 34 in the middle of the package assembly 15 can be used.

The heater cooling unit 158 cools the contact heater 151 by thermal conduction. The heater cooling unit 158 includes a cooling jacket 159 that is disposed in contact with the contact heater 151, and a cooling medium supplier 163 that is coupled to the cooling jacket 159 in such a manner as to supply a cooling medium to the cooling jacket 159. A cooling flow path 160 through which a cooling medium supplied from the cooling medium supplier 163 flows is provided inside the cooling jacket 159. The cooling medium supplier 163 is connected to the inflow port 161 and the discharge port 162, and the inflow port 161 and the discharge port 162 are provided on the outer surface of the cooling jacket 159 so as to be spaced apart from each other. The cooling medium supplied from the cooling medium supplier 163 passes through the inflow port 161, the cooling flow path 160, and the discharge port 162 of the cooling jacket 159 in order to cool the contact heater 151, and is again recovered to the cooling medium supplier 163. After the cooling medium recovered in the cooling medium supplier 163 is cooled again, it can be supplied to the cooling jacket 159 again. As the cooling medium, various cooling media such as a liquid such as cooling water or a gas such as air can be used. Of course, the heater cooling unit 158 can utilize various types of heater cooling units that can rapidly cool the contact heater 151 by various means in addition to the structure shown in the drawing.

The elevating mechanism 165 is provided in connection with the contact heater 151 so that the contact heater 151 is raised and lowered on the upper side of the package assembly 15. The elevating mechanism 165 lowers the contact heater 151 toward the package assembly 15 to bring the contact heater 151 into contact with the second semiconductor package 30 of the package assembly 15 . Moreover, the contact heater 151 is adhered to the second semiconductor package 30 of the package assembly 15 at a fixed pressure by pressing the contact heater 151 toward the package assembly 15 side.

A pressure sensor 167 is disposed between the lift mechanism 165 and the cooling jacket 159 of the heater cooling unit 158. The pressure sensor 167 detects the contact pressure of the contact heater 151 with respect to the second semiconductor package 30 and transmits this detection information to the controller 169. The controller 169 receives the feedback of the contact pressure of the contact heater 151 to the second semiconductor package 30 from the pressure sensor 167, and the contact heater 151 can lift and lower with the second semiconductor package 30 at a fixed pressure. The action of the mechanism 165 is controlled. As the pressure sensor 167, a load cell or the like can be used. The pressure sensor 167 is provided at various positions, such as between the contact heater 151 or the contact heater 151 and the elevating mechanism 165, in addition to being disposed between the elevating mechanism 165 and the cooling jacket 159 as shown in the drawing.

The inspection unit 170 inspects the laminated semiconductor package 10 formed by the heating unit 150 to detect defects of the laminated semiconductor package 10. As the inspection unit 170, an inspection unit of various known configurations that can check the electrical characteristics of the laminated semiconductor package 10 or the like can be used.

Hereinafter, a manufacturing process of the laminated semiconductor package 10 using the manufacturing apparatus 100 of the stacked semiconductor package of the present embodiment will be described.

After the first semiconductor package 20 and the second semiconductor package 30 having the above-described structure are respectively supplied to the designated work positions, the loader 120 picks up the first semiconductor package 20 and loads it onto the pulley 115 of the transfer unit 110. . The first semiconductor package 20 loaded on the pulley 115 is transferred to the adhesive application position by the action of the transfer unit 110. In the adhesive application position, the adhesive dispenser 130 applies an adhesive 45 on the upper surface of the first sealing member 24 of the first semiconductor package 20.

The first semiconductor package 20 to which the adhesive 45 is applied is transferred to the package assembly position in the transfer path by the action of the transfer unit 110. At the package assembly position, the assembly loader 140 picks up the second semiconductor package 30 and laminates it onto the first semiconductor package 20, thereby forming the package assembly 15. At this time, the second package substrate 31 of the second semiconductor package 30 is in contact with the adhesive 45 coated on the first sealing member 24 of the first semiconductor package 20. Further, the package connection terminal 34 of the second semiconductor package 30 is in contact with the terminal pad 25 (see FIG. 1) of the second semiconductor package 30, whereby the first semiconductor package 20 and the second semiconductor package 30 pass through the package. The terminal 34 is connected to be electrically connected.

The package assembly 15 that is assembled on the pulley 115 in this manner is transferred to the heating process position where the heating unit 150 is disposed by the action of the transfer unit 110. In the heating process position, the heating unit 150 performs a heating process for the package assembly 15. The heating process of the package assembly 15 by such a heating unit 150 is specifically as follows.

When the package assembly 15 is located at a lower portion of the contact heater 151, the controller 169 controls the lift mechanism 165 and the power supply device 156 to make the contact surface 152 of the contact heater 151 and the second semiconductor package 30 second. The upper surface of the sealing material 35 is in contact with the contact heater 151 to raise the temperature. When the contact heater 151 is in contact with the second semiconductor package 30, the contact heater 151 and the second semiconductor package 30 are adsorbed by the adsorption force of the adsorption hole 153 at the contact surface 152 of the contact heater 151. .

When the contact heater 151 is in contact with the upper surface of the second semiconductor package 30, the controller 169 raises the heating temperature of the contact heater 151 to a hardening temperature at which the adhesive 45 of the package assembly 15 can be hardened. The adhesive 45 of the package assembly 15 is cured. Specifically, referring to FIG. 4, the controller 169 raises the temperature of the contact heater 151 to a preheating temperature lower than the hardening temperature for a fixed time T1, and is maintained during the fixed time T2. The temperature of the contact heater 151 is rapidly raised to a hardening temperature within a fixed time T3 in a state where the contact heater 151 is brought into contact with the upper surface of the first semiconductor package 20, and then held at this hardening temperature for a fixed time T4. The adhesive 45 of the package assembly 15 is cured.

If the temperature of the contact heater 151 is first raised to the preheating temperature in this manner and then the temperature is raised stepwise to the hardening temperature instead of rapidly increasing from the normal temperature to the hardening temperature, the contact heater 151 and the first semiconductor can be made. When the upper surface of the package 20 is in contact with each other, the temperature is rapidly raised to the curing temperature, whereby the hardening process time can be shortened, and the problem of burden on the contact heater 151 can be reduced. Here, the preheating temperature is not limited to the temperature shown in the graph, and may be set to various temperatures lower than the hardening temperature. Further, preheating of the contact heater 151 may be started before the contact heater 151 comes into contact with the first semiconductor package 20.

The controller 169 controls the heating temperature of the contact heater 151 in this manner, and controls the elevating mechanism 165 to adjust the contact pressure of the contact heater 151 to the second semiconductor package 30. That is, as shown in the graph of FIG. 4, the controller 169 maintains the contact pressure of the contact heater 151 to the second semiconductor package 30 by the elevating mechanism 165 after the contact pressure rises to the first pressure for a fixed time t1, and maintains the fixed time t2. . Therefore, the contact heater 151 presses the second semiconductor package 30 with the first pressure while heating the adhesive 45 to the curing temperature by the second semiconductor package 30. Thereby, the adhesive 45 applied between the first semiconductor package 20 and the second semiconductor package 30 of the package assembly 15 is broadly expanded to be compatible with both the first semiconductor package 20 and the second semiconductor package 30. Stable and tightly bonded and hardened.

Then, the controller 169 promptly raises the heating temperature of the contact heater 151 to the curing temperature for a fixed time T4, and then rapidly raises the temperature to the soldering temperature at which the package connection terminal 34 of the package assembly 15 is melted. Next, the heating temperature of the contact heater 151 is maintained at the soldering temperature for a fixed time T6, and the package connection terminal 34 is melted. At this time, the package connection terminal 34 is fused with the terminal pad 25 of the first semiconductor package 20, whereby the first semiconductor package 20 and the second semiconductor package 30 of the package assembly 15 are soldered through the package connection terminal 34. .

The controller 169 raises the heating temperature of the contact heater 151 to the soldering temperature, and controls the elevating mechanism 165 to raise the contact pressure of the contact heater 151 to the second semiconductor package 30 to the second within a fixed time t3. pressure. The contact heater 151 presses the second semiconductor package 30 while the second pressure is applied for a fixed period of time t4, and the package connection terminal 34 is heated by the second semiconductor package 30 to connect the package connection terminal 34 to the first semiconductor. The package 20 is fused.

By the hardening process and the soldering process by the contact heater 151, the laminated semiconductor package 10 is formed as follows: a package connection terminal between the first semiconductor package 20 and the second semiconductor package 30 34 is electrically connected while being firmly joined by the adhesive layer 40. If the hardening process and the welding process are completed, the controller 169 controls the lift mechanism 165 to move the contact heater 151 away from the second seal member 35 of the second semiconductor package 30 for a fixed time t5. Further, at the same time, power is applied to the contact heater 151 to cause the heater cooling unit 158 to operate to cool the contact heater 151. That is, the cooling medium supplier 163 is operated to flow the cooling medium to the cooling jacket 159 coupled to the contact heater 151, thereby rapidly cooling the contact heater 151 to the preheating temperature for a fixed time T7 by the thermal conduction method. . The reason for this is that the contact heater 151 can be immediately subjected to a subsequent heating process to the brand-new package assembly 15.

In FIG. 4, the preheating temperature is about 50 degrees, the hardening temperature is about 150 degrees, and the soldering temperature is about 250 degrees, but the temperature of the contact heater 151 can be based on the adhesive 45 or the package connecting terminal 34. Various types of changes are realized. Further, the temperature rise time or the temperature holding time of the contact heater 151 can be variously changed, and the contact pressure of the contact heater 151 with respect to the second semiconductor package 30 can be variously changed.

Referring to Fig. 2, the laminated semiconductor package 10 formed by the heating unit 150 is transferred to the inspection unit 170 to be classified into good or defective products through an inspection process.

As described above, the manufacturing apparatus 100 of the stacked semiconductor package of the present embodiment solders the first semiconductor package 20 by the package connection terminal 34 interposed between the first semiconductor package 20 and the second semiconductor package 30. The first semiconductor package 20 and the second semiconductor package 30 are bonded to the second semiconductor package 30 by the adhesive 45 at the same time. Therefore, it is possible to manufacture the laminated semiconductor package 10 which is more robust and structurally superior than the conventional laminated semiconductor package in which the first semiconductor package and the second semiconductor package are bonded by only the package connection terminal.

In addition, the second semiconductor package 30 is pressed by the contact heater 151 to harden the adhesive 45 between the first semiconductor package 20 and the second semiconductor package 30, thereby bonding the first semiconductor package 20 and the second semiconductor. The package body 30 is firmly bonded, so that the following problems can be reduced: in the high temperature soldering process, in the high temperature soldering process, the warpage of the first semiconductor package or the second semiconductor package is in the two semiconductor packages. The joint portion has a defective defect; or after the soldering process, cracks are generated at the package connection terminal or the like.

Further, in a state where the contact heater 151 is brought into contact with the upper surface of the second semiconductor package 30, the temperature and pressure of the contact heater 151 are controlled at high speed by the power supply device 156 and the elevating mechanism 165, thereby being quick and The hardening process and the soldering process for the adhesive 45 and the package connection terminal 34 interposed between the first semiconductor package 20 and the second semiconductor package 30 are continuously performed. Therefore, manufacturing time can be shortened and manufacturing efficiency can be improved.

Further, after the heating process by the contact heater 151 is performed, the contact heater 151 is rapidly cooled by the heater cooling unit 158 to be standby in such a manner that the next heating process can be immediately performed, thereby improving work efficiency. .

The present invention has been described above by way of preferred examples, but the scope of the present invention is not limited to the embodiments described above.

For example, in the drawing, the manufacturing apparatus 100 for a laminated semiconductor package is shown in which an adhesive 45 is applied on the upper surface of the first semiconductor package 20 and the second semiconductor package 30 is laminated on the adhesive 45, but it is also possible. Applying an adhesive to a lower surface of the second semiconductor package to laminate the first semiconductor package and the second semiconductor package by interposing an adhesive between the first semiconductor package and the second semiconductor package body.

In the figure, the manufacturing apparatus 100 of the laminated semiconductor package is shown in a state in which the package connection terminal 34 is provided on the lower surface of the second semiconductor package 30, and the second semiconductor is laminated on the first semiconductor package 20. Although the package body 30 is mounted on the first semiconductor package with the package connection terminal, the second semiconductor package can be laminated on the first semiconductor package.

In addition, in the manufacturing apparatus 100 of the laminated semiconductor package, the second semiconductor package 30 is laminated on the first semiconductor package 20 including the external connection terminals 23, but the laminated semiconductor package can also be manufactured as follows. The first semiconductor package volume layer including the external connection terminal is applied to the second semiconductor package such that the external connection terminal faces upward.

In addition, in the figure, the temperature of the contact heater 151 is expressed as a stepwise change from a preheating temperature to a hardening temperature, a hardening temperature to a soldering temperature, and a soldering temperature to a preheating temperature, but a contact heater The temperature profile can be variously designed according to the characteristics of the adhesive or the connection terminal of the package, and the like. Further, the pressure distribution of the contact heater to the second semiconductor package is not limited to that shown in the drawing.

In the figure, the manufacturing apparatus 100 of the laminated semiconductor package is shown in which each manufacturing process is performed in a state in which the first semiconductor package 20 is placed on the pulley 115. However, a plurality of semiconductor packages may be mounted. The tray is transferred or transported to each manufacturing process position, and each manufacturing process is performed on a plurality of semiconductor packages mounted on the tray.

Further, the apparatus for manufacturing a laminated semiconductor package of the present invention may have a configuration in which the transfer unit is not used. In this case, a transport unit that transports the first semiconductor package, the second semiconductor package, the package assembly, or the stacked semiconductor package to a process position where each process device is provided may be provided.

In addition, the manufacturing apparatus of the laminated semiconductor package of the present invention can also utilize a technique of performing only a heating process after receiving the package assembly from the outside.

10‧‧‧Laminated semiconductor package
15‧‧‧Package assembly
20‧‧‧First semiconductor package
21‧‧‧First package substrate
22‧‧‧First chip
23‧‧‧External connection terminal
24‧‧‧First sealing material
25, 26, 36, 37‧‧‧ terminal pads
27, 38‧‧‧ wafer connection terminal
30‧‧‧Second semiconductor package
31‧‧‧Second package substrate
32, 33‧‧‧ second chip
34‧‧‧Package connection terminal
35‧‧‧Second sealing material
40‧‧‧ adhesive layer
45‧‧‧Binder
100‧‧‧Manufacturing device for laminated semiconductor package
110‧‧‧Transfer unit
115‧‧‧ tackle
120‧‧‧Loader
130‧‧‧Binder dispenser
140‧‧‧Assembler loader
150‧‧‧heating unit
151‧‧‧Contact heater
152‧‧‧Contact surface
153‧‧‧Adsorption holes
154‧‧‧ stomata
155‧‧‧temperature sensor
156‧‧‧Power supply unit
158‧‧‧heater cooling unit
159‧‧‧Cooling sleeve
160‧‧‧Cooling flow path
161‧‧‧Inlet
162‧‧‧Export
163‧‧‧Cooling medium feeder
165‧‧‧ Lifting mechanism
167‧‧‧ Pressure Sensor
169‧‧‧ Controller
170‧‧‧Check unit
T1, T2, T3, T4, T5, T6, T7, t1, t2, t3, t4, t5‧‧‧

1 is a side view showing a laminated semiconductor package manufactured by a manufacturing apparatus of a stacked semiconductor package according to an embodiment of the present invention. FIG. 2 is a configuration diagram schematically showing an apparatus for manufacturing a laminated semiconductor package according to an embodiment of the present invention. 3 is a view showing a heating unit of the apparatus for manufacturing a laminated semiconductor package shown in FIG. 2. Fig. 4 is a graph showing changes in temperature and pressure in a hardening process and a welding process of the heating unit shown in Fig. 3.

10‧‧‧Laminated semiconductor package

15‧‧‧Package assembly

20‧‧‧First semiconductor package

21‧‧‧First package substrate

23‧‧‧External connection terminal

24‧‧‧First sealing material

30‧‧‧Second semiconductor package

34‧‧‧Package connection terminal

35‧‧‧Second sealing material

40‧‧‧ adhesive layer

45‧‧‧Binder

100‧‧‧Manufacturing device for laminated semiconductor package

110‧‧‧Transfer unit

115‧‧‧ tackle

120‧‧‧Loader

130‧‧‧Binder dispenser

140‧‧‧Assembler loader

150‧‧‧heating unit

151‧‧‧Contact heater

158‧‧‧heater cooling unit

159‧‧‧Cooling sleeve

163‧‧‧Cooling medium feeder

165‧‧‧ Lifting mechanism

169‧‧‧ Controller

170‧‧‧Check unit

Claims (12)

A manufacturing apparatus of a laminated semiconductor package, wherein the stacked semiconductor package is a first semiconductor package and a second semiconductor package to be connected by a package between the first semiconductor package and the second semiconductor package The terminal is electrically connected to each other, and the manufacturing apparatus of the laminated semiconductor package includes: a contact heater disposed in contact with one surface of the second semiconductor package to be assembled through the package The second semiconductor package of the body heats the adhesive and the package connection terminal, and the package assembly is interposed between the first semiconductor package and the second semiconductor package Bonding the first semiconductor package and the second semiconductor package in a state in which the first semiconductor package and the adhesive of the second semiconductor package and the package connection terminal are bonded And a controller that controls the contact heater in such a manner that the contact heater and the first The state of the semiconductor package in contact with one side of the heating temperature of the heater are respectively held in contact with a fixed time and then the hardening temperature and the hardening temperature of the package body so that the welding connection terminal melted. The apparatus for manufacturing a laminated semiconductor package according to claim 1, further comprising: a heater cooling unit that cools the contact heater. The apparatus for manufacturing a laminated semiconductor package according to claim 2, wherein the heater cooling unit comprises: a cooling jacket disposed in contact with the contact heater and provided for cooling inside a cooling flow path through which the medium flows; and a cooling medium supplier connected to the cooling jacket to supply a cooling medium to the cooling flow path of the cooling jacket. The apparatus for manufacturing a laminated semiconductor package according to claim 1, wherein: the contact heater has an adsorption hole at a contact surface contacting one surface of the second semiconductor package to adsorb the A second semiconductor package. The apparatus for manufacturing a laminated semiconductor package according to claim 1, wherein: further comprising: a temperature sensor disposed in contact with the contact heater to detect the location The temperature of the contact heater is described and this detection information is transmitted to the controller. The apparatus for manufacturing a laminated semiconductor package according to claim 1, wherein: further comprising: a lifting mechanism, wherein the lifting mechanism is connected to the contact heater to cause the contact heater to be in the package The upper side of the body assembly is raised and lowered so that the contact heater is in contact with one surface of the second semiconductor package of the package assembly. The apparatus for manufacturing a laminated semiconductor package according to claim 6, wherein: the controller controls the contact heater and the elevating mechanism in such a manner that the contact heating The device heats the adhesive by pressing the second semiconductor package with a first pressure, and the contact heater presses the second semiconductor package with a second pressure to heat the package connection terminal . The apparatus for manufacturing a laminated semiconductor package according to claim 7, wherein: further comprising a pressure sensor, the pressure sensor being disposed to the contact heater or the contact heater Between the lifting mechanisms, in order to detect the contact pressure of the contact heater to the second semiconductor package and transmit the detection information to the controller. The apparatus for manufacturing a laminated semiconductor package according to claim 1, wherein: further comprising an adhesive dispenser, the adhesive distributor to the first semiconductor package and the second semiconductor package At least one of the coatings is applied. The apparatus for manufacturing a laminated semiconductor package according to claim 9, further comprising: a transfer unit that fixes any one of the first semiconductor package and the second semiconductor package to a level a state of being transferred along a fixed transfer path; and an assembly loader that picks up the remaining one of the first semiconductor package and the second semiconductor package and laminates to the horizontal transfer through the transfer unit Any one of the first semiconductor package and the second semiconductor package to form the package assembly; and the adhesive dispenser is disposed in a transfer path of the transfer unit The assembly loader is further upstream to apply the adhesive to any one of the first semiconductor package and the second semiconductor package that is horizontally transferred by the transfer unit, the contact a heater disposed downstream of the adhesive dispenser in a transfer path of the transfer unit for the package group transferred through the transfer unit Contacting the second side of the body of the semiconductor package. The apparatus for manufacturing a laminated semiconductor package according to claim 10, further comprising: an inspection unit, the inspection unit being disposed in the transfer path of the transfer unit more than the contact heater Downstream, in order to inspect a laminated semiconductor package formed by soldering the first semiconductor package and the second semiconductor package by the contact heater. The apparatus for manufacturing a laminated semiconductor package according to claim 1, wherein the contact heater is a ceramic heater.