TWI585817B - Inductive coupling type plasma processing device - Google Patents
Inductive coupling type plasma processing device Download PDFInfo
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- TWI585817B TWI585817B TW104128442A TW104128442A TWI585817B TW I585817 B TWI585817 B TW I585817B TW 104128442 A TW104128442 A TW 104128442A TW 104128442 A TW104128442 A TW 104128442A TW I585817 B TWI585817 B TW I585817B
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- 230000008878 coupling Effects 0.000 title claims description 30
- 238000010168 coupling process Methods 0.000 title claims description 30
- 238000005859 coupling reaction Methods 0.000 title claims description 30
- 230000001939 inductive effect Effects 0.000 title claims description 30
- 238000001816 cooling Methods 0.000 claims description 62
- 238000006243 chemical reaction Methods 0.000 claims description 25
- 238000009616 inductively coupled plasma Methods 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 16
- 239000000919 ceramic Substances 0.000 claims description 10
- 239000002826 coolant Substances 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- 239000003989 dielectric material Substances 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 239000010453 quartz Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- NLYAJNPCOHFWQQ-UHFFFAOYSA-N kaolin Chemical group O.O.O=[Al]O[Si](=O)O[Si](=O)O[Al]=O NLYAJNPCOHFWQQ-UHFFFAOYSA-N 0.000 claims 1
- 239000007789 gas Substances 0.000 description 19
- 239000000758 substrate Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000000470 constituent Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
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- 239000007769 metal material Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
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Description
本申請案主張於2014年11月12日向中國大陸國家知識產權局提出之中國大陸申請號201410635189.1之優先權，其全部內容於此併入做為參考。 The present application claims priority to China Mainland Application No. 201410635189.1 filed on November 12, 2014, to the Chinese National Intellectual Property Office, the entire contents of which is hereby incorporated by reference.
本發明涉及半導體加工設備，特別涉及一種電感耦合型電漿處理裝置。 The present invention relates to a semiconductor processing apparatus, and more particularly to an inductively coupled plasma processing apparatus.
當前電感耦合型電漿處理裝置作為在半導體晶片上執行成膜、蝕刻等多種技術的裝置，廣泛應用於半導體器件製造的技術領域中。第1圖示出現有技術的一種電感耦合型電漿處理裝置的結構示意圖，真空處理腔室10底部設有承載待處理基板的基座11，真空處理腔室10頂部具有絕緣蓋板12。絕緣蓋板12上垂直設置與真空處理腔室10連通的陶瓷套筒13，程序氣體(process gas)可從陶瓷套筒13頂部輸入真空處理腔室10。陶瓷套筒13外側纏繞上電感耦合線圈14，電感耦合線圈14藉由配接器與射頻源連接。射頻源向電感耦合線圈14提供射頻交變電流在陶瓷套筒13內產生一個交變的感應磁場，將程序氣體激發形成電漿。 The current inductively coupled plasma processing apparatus is widely used in the technical field of semiconductor device manufacturing as a device for performing various methods such as film formation and etching on a semiconductor wafer. FIG. 1 is a schematic view showing the structure of an inductively coupled plasma processing apparatus of the prior art. The bottom of the vacuum processing chamber 10 is provided with a susceptor 11 for carrying a substrate to be processed, and the top of the vacuum processing chamber 10 has an insulating cover 12 . A ceramic sleeve 13 communicating with the vacuum processing chamber 10 is vertically disposed on the insulating cover 12, and a process gas can be input from the top of the ceramic sleeve 13 to the vacuum processing chamber 10. An inductive coupling coil 14 is wound on the outside of the ceramic sleeve 13, and the inductive coupling coil 14 is connected to the RF source by an adapter. The RF source provides an RF alternating current to the inductive coupling coil 14 to create an alternating induced magnetic field within the ceramic sleeve 13 that excites the process gas to form a plasma.
然而，這些電漿轟擊陶瓷套筒13內壁往往會產生大量的熱量，對電漿處理技術產生負面效果。具體來說，一方面高溫的電漿進入處理腔室則不利於與待處理基板的反應。例如，在進行去光阻劑技術時，如果電漿溫度超過 120℃時，會造成基板表面的光阻劑燒焦、變色等損傷，進而影響後續圖案轉移等製程步驟的進行，造成半導體器件製造的產品良率降低。另一方面，陶瓷套筒13在高溫下也容易損壞，導致使用壽命的縮短，增加了工藝成本。 However, these plasma bombardment of the inner wall of the ceramic sleeve 13 tends to generate a large amount of heat, which has a negative effect on the plasma processing technology. In particular, on the one hand, high temperature plasma entering the processing chamber is detrimental to the reaction with the substrate to be treated. For example, when performing photoresist removal technology, if the plasma temperature exceeds At 120 ° C, the photoresist on the surface of the substrate is burnt, discolored, and the like, which in turn affects the process steps such as subsequent pattern transfer, resulting in a decrease in the yield of the semiconductor device. On the other hand, the ceramic sleeve 13 is also easily damaged at high temperatures, resulting in a shortened service life and an increase in process cost.
因此，需要提供一種能夠避免電漿溫度過高的電漿處理裝置以改善上述缺陷。 Therefore, there is a need to provide a plasma processing apparatus capable of avoiding excessive plasma temperature to improve the above drawbacks.
本發明的主要目的在於克服現有技術的缺陷，以有效降低電漿的溫度，避免對電漿處理裝置的部件及電漿處理技術造成損害。 The main object of the present invention is to overcome the deficiencies of the prior art in order to effectively reduce the temperature of the plasma and avoid damage to the components of the plasma processing apparatus and the plasma processing technology.
為達成上述目的，本發明提供一種電感耦合型電漿處理裝置，包括：反應腔室，所述反應腔室頂部具有絕緣蓋板，所述絕緣蓋板具有一開口；垂直設置於所述絕緣蓋板上藉由所述開口與所述反應腔室連通的絕緣套筒；捲繞於所述絕緣套筒上的第一電感耦合線圈，所述第一電感耦合線圈中通入射頻電流以將引入所述反應腔室的程序氣體在所述絕緣套筒內和/或其下方激發為電漿；以及設置於所述絕緣套筒中的第一冷却元件，其與所述電漿接觸的部分具有抗電漿塗層，所述第一冷却元件中流通冷却介質以冷却所述電漿。 In order to achieve the above object, the present invention provides an inductively coupled plasma processing apparatus comprising: a reaction chamber having an insulating cover at the top thereof, the insulating cover having an opening; and vertically disposed on the insulating cover An insulating sleeve that communicates with the reaction chamber through the opening; a first inductive coupling coil wound on the insulating sleeve, and a radio frequency current is introduced into the first inductive coupling coil to be introduced a program gas of the reaction chamber is excited as a plasma in and/or below the insulating sleeve; and a first cooling element disposed in the insulating sleeve, the portion in contact with the plasma has The plasma resistant coating has a cooling medium circulating in the first cooling element to cool the plasma.
較佳地，所述第一冷却元件可為一冷却筒，其中嵌設有流通所述冷却介質的冷却通道，所述冷却通道的進口和出口均位於所述絕緣套筒外部。 Preferably, the first cooling element may be a cooling cylinder in which a cooling passage through which the cooling medium flows is embedded, and an inlet and an outlet of the cooling passage are located outside the insulating sleeve.
較佳地，所述冷却通道在所述冷却筒中可彎折一次或多次。 Preferably, the cooling passage is bendable one or more times in the cooling cylinder.
較佳地，所述冷却元件一端固定於所述絕緣套筒的頂部，所述冷却通道的進口和出口均從所述冷却元件的固定端伸出所述絕緣套筒的頂部。 Preferably, one end of the cooling element is fixed to the top of the insulating sleeve, and the inlet and the outlet of the cooling passage extend from the fixed end of the cooling element to the top of the insulating sleeve.
較佳地，所述程序氣體通過所述絕緣套筒的頂部邊緣處引入所述反應腔室。 Preferably, the process gas is introduced into the reaction chamber through a top edge of the insulating sleeve.
較佳地，所述程序氣體通過位於所述反應腔室側壁頂部的氣體輸入口引入所述反應腔室。 Preferably, the process gas is introduced into the reaction chamber through a gas inlet located at the top of the side wall of the reaction chamber.
較佳地，所述絕緣蓋板上可設置嵌套於所述第一電感耦合線圈之外的第二電感耦合線圈，所述第二電感耦合線圈中通入射頻電流以將引入所述反應腔室的程序氣體在所述絕緣蓋板下方激發為電漿。 Preferably, the insulating cover plate may be provided with a second inductive coupling coil nested outside the first inductive coupling coil, and a radio frequency current is introduced into the second inductive coupling coil to introduce the reaction cavity. The program gas of the chamber is excited as a plasma under the insulating cover.
較佳地，所述電感耦合型電漿處理裝置可進一步包括第二冷却元件，所述第二冷却元件包括設置於所述絕緣套筒上方的風扇以及從所述風扇向下延伸並容納所述絕緣套筒的風扇外罩，所述風扇外罩底部與所述絕緣蓋板頂面具有間隔，所述風扇從所述絕緣套筒頂部吹入氣體，用於冷却所述絕緣套筒及所述絕緣蓋板。 Preferably, the inductively coupled plasma processing apparatus may further include a second cooling element including a fan disposed above the insulating sleeve and extending downward from the fan and accommodating the a fan cover of the insulating sleeve, the bottom of the fan cover is spaced apart from a top surface of the insulating cover, the fan blowing a gas from a top of the insulating sleeve for cooling the insulating sleeve and the insulating cover board.
較佳地，所述風扇外罩內可設置導流葉片，所述導流葉片形成引導由所述風扇吹出的氣體流動的導流路徑，使所述氣體沿所述導流路徑流動以增加與所述絕緣套筒的接觸。 Preferably, the fan cover may be provided with a guide vane, and the guide vane forms a flow guiding path for guiding the flow of the gas blown by the fan, so that the gas flows along the flow guiding path to increase the position The contact of the insulating sleeve.
較佳地，所述第一冷却元件可包括金屬主體部及位於所述金屬主體部外表面、與所述電漿接觸的抗電漿塗層。 Preferably, the first cooling element may include a metal body portion and a plasma resistant coating on the outer surface of the metal body portion in contact with the plasma.
較佳地，所述絕緣套筒材料可為陶瓷介電材料或石英材料。 Preferably, the insulating sleeve material may be a ceramic dielectric material or a quartz material.
本發明的有益效果在於藉由在反應腔室上部纏繞有電感線圈的絕緣套筒中設置第一冷却元件，對絕緣套筒中的電漿以及絕緣套筒本身予以降溫，從而防止電漿在工藝過程中對光刻膠的損傷，提高絕緣套筒的使用壽命。 The invention has the beneficial effects that the first cooling element is arranged in the insulating sleeve wound with the inductor coil in the upper part of the reaction chamber, and the plasma in the insulating sleeve and the insulating sleeve itself are cooled, thereby preventing the plasma from being processed in the process. The damage to the photoresist during the process increases the service life of the insulating sleeve.
10‧‧‧真空處理腔室 10‧‧‧ Vacuum processing chamber
11‧‧‧基座 11‧‧‧Base
12‧‧‧絕緣蓋板 12‧‧‧Insulation cover
13‧‧‧絕緣套筒 13‧‧‧Insulation sleeve
14‧‧‧第一電感耦合線圈 14‧‧‧First Inductive Coupling Coil
15‧‧‧第一冷却元件 15‧‧‧First cooling element
16‧‧‧輸入口 16‧‧‧ input port
17‧‧‧第二電感耦合線圈 17‧‧‧Second inductive coupling coil
131‧‧‧頂蓋 131‧‧‧Top cover
151‧‧‧冷却通道 151‧‧‧Cooling channel
181‧‧‧風扇 181‧‧‧Fan
182‧‧‧風扇外罩 182‧‧‧Fan cover
183‧‧‧導流葉片 183‧‧‧ guide vanes
P‧‧‧程序氣體 P‧‧‧Program gas
第1圖為現有技術中電漿處理裝置的結構示意圖。 Fig. 1 is a schematic view showing the structure of a plasma processing apparatus in the prior art.
第2圖為本發明一實施例的電漿處理裝置的結構示意圖。 Fig. 2 is a schematic view showing the structure of a plasma processing apparatus according to an embodiment of the present invention.
第3圖為本發明一實施例的電漿處理裝置的第一冷却元件的結構示意圖。 Figure 3 is a schematic view showing the structure of a first cooling element of a plasma processing apparatus according to an embodiment of the present invention.
第4圖為本發明另一實施例的電漿處理裝置的結構示意圖。 Figure 4 is a schematic view showing the structure of a plasma processing apparatus according to another embodiment of the present invention.
第5圖為本發明另一實施例的電漿處理裝置的結構示意圖。 Fig. 5 is a schematic structural view of a plasma processing apparatus according to another embodiment of the present invention.
為使本發明的內容更加清楚易懂，以下結合說明書附圖，對本發明的內容作進一步說明。當然本發明並不侷限於該具體實施例，所屬領域具有通常知識者所熟知的一般替換也涵蓋在本發明的保護範圍內。 In order to make the content of the present invention clearer and easier to understand, the contents of the present invention will be further described below in conjunction with the accompanying drawings. It is a matter of course that the invention is not limited to the specific embodiment, and that the general substitutions well known to those skilled in the art are also encompassed within the scope of the invention.
第2圖顯示了本發明一種實施方式提供的使用本發明氣體導流環的電漿處理裝置。應該理解，電漿處理裝置僅僅是示例性的，其可以包括更少或更多的組成元件，或該組成元件的安排可能與第2圖所示不同。 Fig. 2 shows a plasma processing apparatus using a gas guiding ring of the present invention provided by an embodiment of the present invention. It should be understood that the plasma processing apparatus is merely exemplary, it may include fewer or more constituent elements, or the arrangement of the constituent elements may differ from that shown in FIG.
電漿處理裝置包括反應腔室10和位於反應腔室10上方的絕緣蓋板12。絕緣蓋板12通常為陶瓷介電材料。反應腔室10內部下方設有放置待處理基板的基座11，基座11可連接射頻偏置功率源(圖中未示)，以便增加電漿與基板碰撞的能量。反應腔室10底部與外置的排氣裝置如真空泵(圖中未示)相連接，用以在處理過程中將用過的反應氣體及副產品氣體抽出反應腔室10。絕緣蓋板12上垂直設置有絕緣套筒13，絕緣套筒13藉由絕緣蓋板12中的開口與反應腔室10連通。絕緣套筒13的材料一般為陶瓷介電材料或石英材料。絕緣套筒13中可設有進氣通道，用於引入電漿處理所需的程序氣體，本實施例中進氣口設置於絕緣套筒頂部邊緣處。絕緣套筒13內保持與反應腔室10內相同的真空環境。絕緣套筒13外側壁上捲繞第一電感耦合線圈14，該第一電感耦合線圈14可藉由配接器(圖中未示)與射頻功率源(圖中未示)，射頻功率源提供射頻電 流至第一電感耦合線圈14而使第一電感耦合線圈14感應出射頻電場，將絕緣套筒13內的反應氣體激發形成電漿，絕緣套筒可選擇耐電漿腐蝕且容許射頻功率穿透的材料。所述電漿進入反應腔室10與待處理基板反應，以進行蝕刻或澱積等電漿處理技術。為了避免所產生的電漿溫度過高，本發明在絕緣套筒13中設置一內部流通冷却介質的第一冷却元件15，起到有效控制或者降低電漿的溫度和絕緣套筒溫度的目的。其中，第一冷却元件15與電漿接觸的表面具有抗電漿塗層，或其本身由抗電漿材料製成，以防止被電漿轟擊損壞。在一具體實施例中，該抗電漿塗層由第一冷却元件15的表面經表面氧化處理形成，在另一具體實施例中，抗電漿塗層為的材料為Y2O3或YF3。 The plasma processing apparatus includes a reaction chamber 10 and an insulating cover 12 above the reaction chamber 10. The insulating cover 12 is typically a ceramic dielectric material. A susceptor 11 for placing a substrate to be processed is disposed under the reaction chamber 10, and the susceptor 11 can be connected to a radio frequency bias power source (not shown) to increase the energy of the plasma colliding with the substrate. The bottom of the reaction chamber 10 is connected to an external exhaust device such as a vacuum pump (not shown) for drawing the used reaction gas and by-product gas out of the reaction chamber 10 during the process. An insulating sleeve 13 is vertically disposed on the insulating cover 12, and the insulating sleeve 13 communicates with the reaction chamber 10 through an opening in the insulating cover 12. The material of the insulating sleeve 13 is generally a ceramic dielectric material or a quartz material. An air inlet passage may be provided in the insulating sleeve 13 for introducing a program gas required for plasma processing. In this embodiment, the air inlet is disposed at a top edge of the insulating sleeve. The same vacuum environment as in the reaction chamber 10 is maintained in the insulating sleeve 13. The first inductive coupling coil 14 is wound on the outer sidewall of the insulating sleeve 13. The first inductive coupling coil 14 can be provided by an RF power source through an adapter (not shown) and a radio frequency power source (not shown). The RF current is supplied to the first inductive coupling coil 14 to cause the first inductive coupling coil 14 to induce a radio frequency electric field, and the reaction gas in the insulating sleeve 13 is excited to form a plasma. The insulating sleeve can be selected to resist plasma corrosion and allow radio frequency power to penetrate. s material. The plasma enters the reaction chamber 10 and reacts with the substrate to be processed to perform plasma processing techniques such as etching or deposition. In order to prevent the generated plasma temperature from being too high, the present invention provides a first cooling element 15 internally circulating a cooling medium in the insulating sleeve 13 for the purpose of effectively controlling or reducing the temperature of the plasma and the temperature of the insulating sleeve. Wherein, the surface of the first cooling element 15 in contact with the plasma has a plasma resistant coating, or itself is made of a plasma resistant material to prevent damage by plasma bombardment. In a specific embodiment, the plasma resistant coating is formed by surface oxidation treatment of the surface of the first cooling element 15, and in another embodiment, the plasma resistant coating is Y 2 O 3 or YF. 3 .
請繼續參考第3圖，其所示為本發明一實施例的第一冷却元件的結構示意圖。第一冷却元件15為冷却筒，具有圓筒狀結構，其內部嵌設冷却通道151，該冷却通道151中流通冷却介質，如冷却液或冷却水。由於電漿處理過程中絕緣套筒13內為真空環境，因此冷却通道的進口和出口均需設置在絕緣套筒13的外部，以與外部的冷却管線或溫控裝置連接。本實施例中，冷却筒以上端固定於絕緣套筒13的頂蓋131，下端懸空的方式設置於絕緣套筒13中。冷却通道151的進口和出口均從冷却筒的上端伸出頂蓋131而以輸入和輸出冷却介質。本實施例的冷却通道151在冷却筒內彎折多次，增加了冷却筒內流通的冷却介質容量，使冷却筒的冷却作用發揮更大，在其他實施例中，冷却通道151也可僅彎折一次。進一步地，為了提高熱傳導效率，可將冷却筒的主體部分都採用導熱係數較好的金屬材料，而僅在暴露於電漿的表面塗覆抗電漿塗層，以期更加快速地使電漿和絕緣套筒13降溫。 Please refer to FIG. 3, which is a schematic structural view of a first cooling element according to an embodiment of the present invention. The first cooling element 15 is a cooling cylinder having a cylindrical structure with a cooling passage 151 embedded therein, in which a cooling medium such as a coolant or cooling water flows. Since the inside of the insulating sleeve 13 is a vacuum environment during the plasma processing, both the inlet and the outlet of the cooling passage need to be disposed outside the insulating sleeve 13 to be connected to an external cooling line or temperature control device. In this embodiment, the upper end of the cooling cylinder is fixed to the top cover 131 of the insulating sleeve 13, and the lower end is suspended in the insulating sleeve 13. Both the inlet and the outlet of the cooling passage 151 protrude from the upper end of the cooling cylinder to input and output the cooling medium. The cooling passage 151 of the embodiment is bent a plurality of times in the cooling cylinder, which increases the capacity of the cooling medium circulating in the cooling cylinder, so that the cooling effect of the cooling cylinder is exerted more. In other embodiments, the cooling passage 151 can also be bent only. Fold it once. Further, in order to improve the heat transfer efficiency, the main body portion of the cooling cylinder may be made of a metal material having a better thermal conductivity, and the anti-plasma coating may be applied only to the surface exposed to the plasma, so as to make the plasma and the plasma more quickly. The insulating sleeve 13 is cooled.
本實施例中，程序氣體是從絕緣套筒13頂部導入，但也可以考慮從處理腔室10側壁頂部，即絕緣蓋板12下方導入。這樣電漿產生在絕緣套筒13內靠近絕緣蓋板的開口處或絕緣套筒13下方，第一冷却元件15同樣可以對電漿 加以冷却，減小因電漿轟擊絕緣套筒13內壁產生的熱量。當然，在此情况下為增加程序氣體的解離時間，可藉由氣體導流環的設計將程序氣體的噴出方向設置為傾斜向上，使程序氣體具有向上的初始速度。 In the present embodiment, the program gas is introduced from the top of the insulating sleeve 13, but it is also conceivable to be introduced from the top of the side wall of the processing chamber 10, that is, below the insulating cover 12. Thus, the plasma is generated in the insulating sleeve 13 near the opening of the insulating cover or below the insulating sleeve 13, and the first cooling element 15 can also be used for plasma. Cooling is performed to reduce the amount of heat generated by the plasma bombardment of the inner wall of the insulating sleeve 13. Of course, in this case, in order to increase the dissociation time of the program gas, the discharge direction of the program gas can be set to be inclined upward by the design of the gas guide ring, so that the program gas has an upward initial velocity.
第4圖所示為本發明另一實施例的電漿處理裝置。本實施例中，在絕緣蓋板12下方的處理腔室10側壁上設置程序氣體輸入口16，在絕緣蓋板12上設置第二電感耦合線圈17。第二電感耦合線圈17嵌套在第一電感耦合線圈14之外，其可藉由配接器(圖中未示)與射頻功率源(圖中未示)連接，該配接器與射頻功率源可與第一電感耦合線圈14所配套連接的不同或相同。藉由向第二電感耦合線圈17通入射頻電流在絕緣蓋板12下方將反應腔室10側壁的氣體輸入口所導入的程序氣體激發為電漿。雖然圖中未示，但在本實施例中絕緣套筒13的頂板上也可設置另一程序氣體輸入口，本發明並不加以限制。在電漿技術過程中，第一電感耦合線圈14和第二電感耦合線圈17同時作用，可以形成兩個區域的電漿，既可以提供所需的電漿的密度，又可以調節電漿均勻性。在其他實施例中，程序氣體也可僅從絕緣套筒的頂板上的輸入口輸入，則第二電感耦合線圈17對電漿中的氣體分子進行二次轟擊，進一步將氣體分子解離成自由基。 Fig. 4 is a view showing a plasma processing apparatus according to another embodiment of the present invention. In the present embodiment, a program gas input port 16 is disposed on the side wall of the processing chamber 10 below the insulating cover 12, and a second inductive coupling coil 17 is disposed on the insulating cover 12. The second inductive coupling coil 17 is nested outside the first inductive coupling coil 14, and can be connected to an RF power source (not shown) by an adapter (not shown), the adapter and the RF power. The source may be different or the same as the mating connection of the first inductive coupling coil 14. The program gas introduced into the gas inlet port on the side wall of the reaction chamber 10 is excited as a plasma under the insulating cover 12 by passing an RF current to the second inductive coupling coil 17. Although not shown in the drawings, in the present embodiment, another program gas input port may be provided on the top plate of the insulating sleeve 13, and the present invention is not limited thereto. In the plasma technology process, the first inductive coupling coil 14 and the second inductive coupling coil 17 act simultaneously to form two regions of plasma, which can provide the required plasma density and adjust the plasma uniformity. . In other embodiments, the program gas may also be input only from the input port on the top plate of the insulating sleeve, and the second inductive coupling coil 17 performs secondary bombardment on the gas molecules in the plasma to further dissociate the gas molecules into free radicals. .
第5圖所示為本發明另一實施例的電漿處理裝置的結構示意圖。本實施例中，為進一步降低絕緣套筒13，或同時降低絕緣套筒13和絕緣蓋板12的溫度，還設置第二冷却元件。如圖所示，第二冷却元件包括交流/直流驅動的風扇181、從風扇181向下延伸並容納絕緣套筒的風扇外罩182。風扇外罩182底部並未延伸至絕緣蓋板12，而是懸空在絕緣蓋板12上方與之頂面保留一定間隔。風扇181從絕緣套筒13的上方吹入氣體，該氣體沿風扇外罩182向下流動以冷却絕緣套筒13，並從風扇外罩182與絕緣蓋板12的間隔處水平吹出進一步冷却絕緣蓋板12。進一步地，為了更好實現風扇冷却絕緣套筒13的目的，在風扇外罩182內設置多個導流葉片183，導流葉片183形成了引導風扇吹出氣體流動的導 流路徑，使得風扇181吹出的氣體能夠沿導流路徑流動而增加與絕緣套筒13外壁的接觸。本實施例中，導流葉片183具有朝向絕緣套筒13向下傾斜的表面，使得原本垂直下降的吹出氣體能夠吹向絕緣套筒13。雖然圖中未示，但本實施例的絕緣蓋板12上也可設置第二電感耦合線圈，程序氣體輸入口也可設置在絕緣蓋板下方或同時設置於絕緣蓋板下方和絕緣套筒頂部，本發明並不加以限制。 Fig. 5 is a view showing the structure of a plasma processing apparatus according to another embodiment of the present invention. In the present embodiment, in order to further reduce the insulating sleeve 13, or simultaneously reduce the temperatures of the insulating sleeve 13 and the insulating cover 12, a second cooling element is also provided. As shown, the second cooling element includes an AC/DC driven fan 181, a fan shroud 182 that extends downwardly from the fan 181 and houses an insulating sleeve. The bottom of the fan cover 182 does not extend to the insulating cover 12, but is suspended above the insulating cover 12 to maintain a certain distance from the top surface. The fan 181 blows gas from above the insulating sleeve 13, and the gas flows downward along the fan housing 182 to cool the insulating sleeve 13, and horizontally blows out from the interval between the fan housing 182 and the insulating cover 12 to further cool the insulating cover 12 . Further, in order to better realize the purpose of cooling the insulating sleeve 13 by the fan, a plurality of guide vanes 183 are disposed in the fan cover 182, and the guide vanes 183 form a guide for guiding the flow of the blown gas of the fan. The flow path allows the gas blown by the fan 181 to flow along the flow guiding path to increase contact with the outer wall of the insulating sleeve 13. In the present embodiment, the guide vanes 183 have a surface that is inclined downward toward the insulating sleeve 13, so that the originally vertically descending blown gas can be blown toward the insulating sleeve 13. Although not shown in the drawings, a second inductive coupling coil may be disposed on the insulating cover 12 of the embodiment, and the program gas input port may also be disposed under the insulating cover or at the same time under the insulating cover and at the top of the insulating sleeve. The invention is not limited.
綜上所述，本發明的電漿處理裝置藉由在絕緣套筒中設置第一冷却元件，對絕緣套筒中的電漿以及絕緣套筒本身予以降溫，從而防止電漿在工藝過程中對光刻膠的損傷，提高絕緣套筒的使用壽命。進一步地，藉由第二冷却元件與第一冷却元件配合作用，起到更好的冷却效果。 In summary, the plasma processing apparatus of the present invention cools the plasma in the insulating sleeve and the insulating sleeve itself by providing a first cooling element in the insulating sleeve, thereby preventing the plasma from being processed during the process. The damage of the photoresist improves the service life of the insulating sleeve. Further, by the second cooling element cooperating with the first cooling element, a better cooling effect is achieved.
雖然本發明已以較佳實施例揭示如上，然所述諸多實施例僅為了便於說明而舉例而已，並非用以限定本發明，所屬領域具有通常知識者在不脫離本發明精神和範圍的前提下可作若干的更動與潤飾，本發明所主張的保護範圍應以發明申請專利範圍所述為準。 The present invention has been described in terms of the preferred embodiments thereof, and the present invention is intended to be illustrative only, and is not intended to limit the scope of the invention. A number of changes and refinements may be made, and the scope of protection claimed by the present invention shall be as described in the scope of the invention patent application.
10‧‧‧真空處理腔室 10‧‧‧ Vacuum processing chamber
11‧‧‧基座 11‧‧‧Base
12‧‧‧絕緣蓋板 12‧‧‧Insulation cover
13‧‧‧絕緣套筒 13‧‧‧Insulation sleeve
14‧‧‧電感耦合線圈 14‧‧‧Inductive Coupling Coil
15‧‧‧第一冷却元件 15‧‧‧First cooling element
P‧‧‧程序氣體 P‧‧‧Program gas
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| KR101845312B1 (en) * | 2016-11-28 | 2018-04-05 | 피에스케이 주식회사 | Plasma source and substrate treatment apparatus including the same |
| CN110173411A (en) * | 2019-06-21 | 2019-08-27 | 北京北方华创微电子装备有限公司 | Cold pump closure and reaction chamber |
| CN112376029B (en) * | 2020-11-11 | 2022-10-21 | 北京北方华创微电子装备有限公司 | Plasma immersion ion implantation apparatus |
| CN113611588A (en) * | 2021-07-02 | 2021-11-05 | 江苏籽硕科技有限公司 | ICP plasma etching equipment capable of increasing plasma density |
| CN115602406A (en) * | 2021-07-09 | 2023-01-13 | 北京北方华创微电子装备有限公司（Cn） | Coil device for generating plasma and semiconductor process equipment |
| CN119132919B (en) * | 2024-09-12 | 2025-09-12 | 上海邦芯半导体科技有限公司 | ICP etching equipment with cooling function |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW278204B (en) * | 1995-06-07 | 1996-06-11 | Materials Research Corp | Plasma sputter etching system with reduced particle contamination |
| TW348269B (en) * | 1996-10-18 | 1998-12-21 | Applied Materials Inc | Inductively coupled parallel-plate plasma reactor with a conical dome |
| US6074512A (en) * | 1991-06-27 | 2000-06-13 | Applied Materials, Inc. | Inductively coupled RF plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners |
| TW508617B (en) * | 1999-11-15 | 2002-11-01 | Lam Res Corp | Temperature control system for plasma processing apparatus |
| TW200950601A (en) * | 2008-05-20 | 2009-12-01 | New Power Plasma Co Ltd | Plasma reactor with internal transformer |
| TW201314769A (en) * | 2011-08-11 | 2013-04-01 | 東京威力科創股份有限公司 | Plasma processing device |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5824607A (en) * | 1997-02-06 | 1998-10-20 | Applied Materials, Inc. | Plasma confinement for an inductively coupled plasma reactor |
| CN100530510C (en) * | 2007-05-15 | 2009-08-19 | 西安交通大学 | An electrodeless RF induction coupled plasma dischargable atomic source |
| CN201313936Y (en) * | 2008-11-21 | 2009-09-23 | 上海兴燃能源技术有限公司 | Normal pressure plasma generator |
| EP2341525B1 (en) * | 2009-12-30 | 2013-10-23 | FEI Company | Plasma source for charged particle beam system |
| US8987678B2 (en) * | 2009-12-30 | 2015-03-24 | Fei Company | Encapsulation of electrodes in solid media |
| JP6048068B2 (en) * | 2012-10-25 | 2016-12-21 | 株式会社島津製作所 | High frequency power supply for plasma and ICP emission spectroscopic analyzer using the same |
-
2014
- 2014-11-12 CN CN201410635189.1A patent/CN105655220B/en active Active
-
2015
- 2015-08-28 TW TW104128442A patent/TWI585817B/en active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6074512A (en) * | 1991-06-27 | 2000-06-13 | Applied Materials, Inc. | Inductively coupled RF plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners |
| TW278204B (en) * | 1995-06-07 | 1996-06-11 | Materials Research Corp | Plasma sputter etching system with reduced particle contamination |
| TW348269B (en) * | 1996-10-18 | 1998-12-21 | Applied Materials Inc | Inductively coupled parallel-plate plasma reactor with a conical dome |
| TW508617B (en) * | 1999-11-15 | 2002-11-01 | Lam Res Corp | Temperature control system for plasma processing apparatus |
| TW200950601A (en) * | 2008-05-20 | 2009-12-01 | New Power Plasma Co Ltd | Plasma reactor with internal transformer |
| TW201314769A (en) * | 2011-08-11 | 2013-04-01 | 東京威力科創股份有限公司 | Plasma processing device |
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