TWI585785B - Electronic parts manufacturing methods, electronic components and electronic devices - Google Patents

Description

Electronic component manufacturing method, electronic component and electronic device

The present invention relates to a method of manufacturing an electronic component, an electronic component, and an electronic device.

Japanese Patent No. 5375963 (Patent Document 1) is known as a thermal resistor of an example of an electronic component. The thermistor has a metal substrate, a thermal resistor layer directly formed on the metal substrate, and a pair of divided electrodes formed on the thermal resistor layer. The thickness of the metal substrate is thicker than the thickness of the thermal resistor layer.

[Previous Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent No. 5375963

Moreover, in the above-mentioned prior art thermistor, the thickness of the metal substrate is thicker than the thickness of the thermistor layer, so if there is a difference in shrinkage ratio between the metal substrate and the thermistor layer in the firing step of the thermistor, Then there is a warp in the thermal resistor. Further, if the warpage of the thermistor is large, the conveyance failure of the thermistor occurs in the apparatus of the subsequent step (for example, the feeding portion of the characteristic screening machine, etc.). Therefore, the equipment operation rate and the yield are deteriorated, and the manufacturing cost is increased.

Accordingly, an object of the present invention is to provide a method of manufacturing an electronic component, an electronic component, and an electronic device that can suppress the occurrence of warpage of an electronic component.

In order to solve the problem, the method for producing an electronic component according to the present invention includes a step of producing a sintered body, wherein the first ceramic layer and the first electrode and the second electrode are laminated in a thickness direction and fired. And a polishing step of grinding a portion of the fired body in a thickness direction.

According to the method of producing an electronic component of the present invention, since a portion of the fired body is polished in the thickness direction after the step of producing the fired body, the thickness of the fired body in the firing is thick, so that the baking can be suppressed. The occurrence of warpage of the fired body. On the other hand, when the thickness of the fired body is thin, warpage of the fired body during firing is caused by the aspect ratio of the fired body. Therefore, the occurrence of warpage of the fired body is suppressed, and an electronic component without warpage can be produced. Therefore, in the equipment of the subsequent steps (for example, the feeding portion of the characteristic screening machine, etc.), the conveyance failure of the electronic component is improved, the equipment operation rate and the yield are improved, and the manufacturing cost is lowered.

Further, in the method of producing an electronic component according to the embodiment, the second ceramic layer is formed by laminating the first ceramic layer on the first ceramic layer so as to cover the first electrode and the second electrode. In the above-described polishing step, at least one of the second ceramic layers is polished so that the first electrode and the second electrode are exposed from the second ceramic layer.

According to the method of manufacturing an electronic component of the above-described embodiment, in the step of fabricating the sintered body, the second ceramic layer is laminated on the first ceramic layer so as to cover the first electrode and the second electrode, and in the polishing step, One of the second ceramic layers is polished to expose the first electrode and the second electrode from the second ceramic layer. In this manner, since the first ceramic layer is not polished, for example, the reinforcing member can be attached to the opposite side of the electrode of the first ceramic layer to strengthen the strength of the fired body, and then the polishing step can be performed, whereby the fired body in the polishing step can be suppressed. crack.

Moreover, in the method of manufacturing an electronic component according to the embodiment, a protective step of providing a first protective layer on a side opposite to the electrode of the first ceramic layer is provided between the fired body forming step and the polishing step.

According to the method of manufacturing an electronic component of the above embodiment, it is produced in a fired body Since there is a protective step between the step and the polishing step, the first protective layer may be provided on the opposite side of the first ceramic layer from the second ceramic layer to strengthen the strength of the fired body, and then the polishing step may be performed to suppress the firing in the polishing step. The crack of the body.

Further, in the method of manufacturing an electronic component according to the embodiment, in the polishing step, one of the first ceramic layers is polished.

According to the method of manufacturing an electronic component of the above embodiment, one portion of the first ceramic layer is polished in the polishing step. Thus, since only the first ceramic layer is polished, the polishing becomes simple.

Further, in the method of manufacturing an electronic component according to the embodiment, after the polishing step, a protective step of providing a first protective layer on a side opposite to the electrode of the first ceramic layer is provided.

According to the method of manufacturing an electronic component of the above embodiment, since the protective step of providing the first protective layer on the opposite side of the electrode from the first ceramic layer after the polishing step, the strength of the electronic component can be improved.

Further, in the method of manufacturing an electronic component according to the embodiment, after the polishing step, a protective step is provided in which a first protective layer is provided on a side opposite to the electrode of the first ceramic layer, and the first electrode is covered And the second electrode layer is provided with the second protective layer on the first ceramic layer; and the protective layer polishing step is performed by at least facing the first electrode and the second electrode from the second protective layer One of the second protective layers is polished.

According to the method of manufacturing an electronic component of the above embodiment, since the first protective layer is provided on the opposite side of the electrode from the first ceramic layer, the strength of the electronic component can be improved. Further, since the second protective layer is provided on the first ceramic layer, the second protective layer is provided between the first electrode and the second electrode, and the occurrence of migration between the first electrode and the second electrode can be suppressed. Further, since the second protective layer is provided on the first ceramic layer, plating is applied to the first electrode and the second electrode. In the case of a layer, corrosion of the first ceramic layer by the plating layer can be prevented.

Further, in the method of manufacturing an electronic component according to the embodiment, before the polishing step, the step of protecting the upper side of the second protective layer on the second ceramic layer so as to cover the first electrode and the second electrode is provided After the polishing step, a first protective layer lower side protection step is provided on the opposite side of the first ceramic layer from the internal electrode, and after the lower side protection step, the first electrode and the first electrode are provided A protective layer polishing step of polishing at least one of the second protective layers so that the second electrode is exposed from the second protective layer.

According to the method of manufacturing an electronic component of the above-described embodiment, the second protective layer is provided on the second ceramic layer so as to cover the first electrode and the second electrode before the polishing step. Therefore, the strength of the fired body can be strengthened and then polished. In the step, cracking of the fired body in the grinding step can be suppressed. Further, since the first protective layer is provided on the side opposite to the internal electrode of the first ceramic layer, the strength of the electronic component can be improved. Further, since the second protective layer is provided on the second ceramic layer, the second protective layer is provided between the first electrode and the second electrode, and the occurrence of migration between the first electrode and the second electrode can be suppressed. Further, since the second protective layer is provided on the second ceramic layer, when the plating layer is provided on the first electrode and the second electrode, corrosion of the plating layer on the second ceramic layer can be prevented.

Further, in the method of manufacturing an electronic component according to the embodiment, the method of manufacturing a plurality of electronic components, wherein the first electrode and the first electrode corresponding to a region of one electronic component are provided in the step of fabricating the sintered body The second electrode has a cutting step of cutting the fired body into a region of one electronic component after the polishing step.

According to the method of manufacturing an electronic component of the above embodiment, after the polishing step, the step of cutting the sintered body into the region of each electronic component is performed, so that the cutting is performed by the cutting The large-sized fired body is ground to improve productivity, and the grinding load can be reduced to produce a non-damaged electronic component.

Moreover, in the method of manufacturing an electronic component according to the embodiment, the protective step of providing the first protective layer on the side opposite to the electrode of the first ceramic layer is provided between the firing step and the cutting step.

According to the method of manufacturing an electronic component of the above-described embodiment, the protective step of providing the first protective layer on the opposite side of the electrode from the first ceramic layer between the firing step and the cutting step is easy to be performed before the cutting. The bulk of the fired body is attached to the first protective layer.

Moreover, the method for producing an electronic component according to the present invention includes a lamination step of producing a laminate including at least a ceramic layer, and a firing step of firing the laminate to form a fired body, and a polishing step One part of the fired body is polished in the thickness direction, and an electrode forming step is performed on the first surface of the fired body to form a first electrode and a second electrode.

According to the method of producing an electronic component of the present invention, since one portion of the fired body is polished in the thickness direction after the firing step, the thickness of the laminated body before the firing step is thick, so that the firing step is performed in the firing step. The generation of warpage in the laminated body is suppressed. On the other hand, when the thickness of the laminated body is thin, there is a possibility that warpage occurs in the laminated body during firing due to the aspect ratio of the laminated body. Therefore, the occurrence of warpage of the fired body is suppressed, and an electronic component without warpage can be produced. Therefore, in the equipment of the subsequent step (for example, the feeding portion of the characteristic screening machine, etc.), the conveyance failure of the electronic component is improved, the equipment operation rate and the yield are improved, and the manufacturing cost is lowered.

Further, in the method of manufacturing an electronic component according to the embodiment, a protective step of providing the first protective layer on the side opposite to the polishing side of the fired body is provided between the baking step and the polishing step.

According to the method for producing an electronic component of the above-described embodiment, since the protective step is provided between the firing step and the polishing step, the first protective layer can be provided on the side opposite to the polishing side of the fired body to enhance the strength of the fired body. Thereafter, the polishing step is performed to suppress cracking of the fired body in the polishing step.

Moreover, in the method of manufacturing an electronic component according to the embodiment, after the polishing step, a protective step of providing the first protective layer on the polishing side of the fired body is provided.

According to the method of manufacturing an electronic component of the above embodiment, since the protective step of providing the first protective layer on the polishing side of the fired body after the polishing step is performed, the strength of the electronic component can be improved.

Further, in the method of manufacturing an electronic component according to the embodiment, the method of manufacturing a plurality of electronic components, wherein in the electrode forming step, the first electrode and the second electrode corresponding to a region of one electronic component are provided The electrode has a cutting step of cutting the fired body into a region of each electronic component after the electrode forming step.

According to the method of manufacturing an electronic component of the above-described embodiment, since the step of cutting the fired body into the region of each electronic component is performed after the electrode forming step, the polishing step can be performed before the cutting step. Grinding the bulk of the fired body before cutting, the load on the polishing can be reduced, and the electronic parts without damage can be produced.

Moreover, in the method of manufacturing an electronic component according to the embodiment, a protective step of providing the first protective layer on the side opposite to the electrode of the fired body is provided between the baking step and the cutting step.

According to the method of manufacturing an electronic component of the above-described embodiment, since the protective step of providing the first protective layer on the opposite side of the electrode from the sintered body is provided between the firing step and the cutting step, it is easy to be large before the cutting. The first protective layer is attached to the fired body.

Moreover, the electronic component of the present invention has: a green body comprising: a first electrode and a second electrode, wherein the first electrode and the second electrode are disposed separately from the first surface of the green body; and the first protective layer is disposed on a side opposite to the first surface of the green body The second surface; and at least one of the first surface and the second surface of the green body has a polished surface.

Here, the polishing surface means a surface having at least two polishing marks in a size of 0.1 mm × 0.1 mm and at least two polishing marks are substantially parallel.

According to the electronic component of the invention, at least one of the first surface and the second surface of the green body has a polished surface. Therefore, when manufacturing an electronic component, the thickness of the green body can be made thicker, and thereafter, the green body can be ground to a specific thickness. Thus, since the thickness of the green body can be made thick, the occurrence of warpage of the green body during firing can be suppressed. Therefore, the occurrence of warpage of the green body is suppressed, and an electronic component without warpage can be produced. Therefore, in the equipment of the subsequent step (for example, the feeding portion of the characteristic screening machine, etc.), the conveyance failure of the electronic component is improved, the equipment operation rate and the yield are improved, and the manufacturing cost is lowered.

Moreover, when the first and second electrode sides of the electronic component are mounted on the mounting substrate, the first protective layer of the electronic component is located on the surface opposite to the mounting substrate (hereinafter referred to as a non-mounting surface). Therefore, since the non-mounting surface of the electronic component is the first protective layer, the insulation of the non-mounting surface of the electronic component can be ensured.

Further, since the first protective layer is provided on the second surface of the green body, the first protective layer can be used to reinforce the weakened green body, and the strength of the electronic component can be improved.

Further, in the electronic component of the embodiment, the thickness of the electronic component is smaller than the length and width of the electronic component.

According to the electronic component of the above embodiment, since the thickness of the electronic component is smaller than the length and width of the electronic component, the electronic component can be made lower in profile.

Further, in the electronic component of the embodiment, the second protective layer is provided in a region between the first electrode and the second electrode on the first surface of the green body.

According to the electronic component of the above embodiment, since the second protective layer is provided in the region between the first electrode and the second electrode on the first surface of the green body, the occurrence of migration between the first electrode and the second electrode can be suppressed.

Further, in the electronic component of the embodiment, the second protective layer is provided on the entire surface of the first surface of the green body except for a region overlapping the first electrode and the second electrode.

According to the electronic component of the above-described embodiment, since the second protective layer is provided on the first surface of the green body except for the region overlapping the first electrode and the second electrode, the first electrode and the second electrode are provided. When the electrode is provided with a plating layer, corrosion of the second surface of the green body by the plating layer can be prevented.

Moreover, the electronic device according to the embodiment includes: the electronic component; and an insulating member covering the electronic component.

According to the electronic device of the above embodiment, since the insulating member covers the electronic component, the strength and reliability of the electronic component can be improved.

According to the method of manufacturing an electronic component of the present invention, the electronic component, and the electronic device, the occurrence of warpage of the electronic component can be suppressed.

1‧‧‧Thermal resistance (electronic parts)

1A‧‧‧Thermal Resistor (Electronic Parts)

1B‧‧‧Thermal Resistor (Electronic Parts)

1C‧‧‧Thermal Resistor (Electronic Parts)

10‧‧‧ Body

10a‧‧‧1st

10b‧‧‧2nd

11‧‧‧1st ceramic layer

12‧‧‧2nd ceramic layer

21‧‧‧1st electrode

22‧‧‧2nd electrode

41‧‧‧1st protective layer

42‧‧‧2nd protective layer

45‧‧‧ plating layer

50‧‧‧Layered body

50A‧‧‧Layer

50B‧‧‧Layer

50C‧‧‧Layer

50D‧‧‧Laminated body

50E‧‧‧Laminated body

50F‧‧‧layer

50G‧‧‧layer

50H‧‧‧Layer

51‧‧‧Sintered

51a‧‧‧1st

51b‧‧‧2nd

51A‧‧‧Sintered

51B‧‧‧Sintered

51C‧‧‧burned body

51D‧‧‧burned body

51E‧‧‧Sintered

51F‧‧‧burned body

51G‧‧‧burned body

51H‧‧‧burned body

100‧‧‧Thermistor sensor (electronic device)

124a‧‧‧Sn coating

124b‧‧‧Ni plating layer

124c‧‧‧Cu plating

126‧‧‧Cu foil

128‧‧‧Insulating components

130‧‧‧Insulating resin sheet

132‧‧‧Leader

134‧‧‧Insulating resin

140‧‧‧ Conductive connecting materials

142‧‧‧Insulating resin

L‧‧‧ Length direction

T‧‧‧ thickness direction

Thickness of T1‧‧‧Thermistor

W‧‧‧Width direction

Fig. 1A is a plan view showing a thermal resistor of an electronic component according to a first embodiment of the present invention.

Fig. 1B is a LT cross-sectional view of the thermal resistor.

Fig. 2A is an explanatory view for explaining a method of manufacturing the thermistor of the first embodiment.

Fig. 2B is an explanatory view for explaining a method of manufacturing the thermistor of the first embodiment.

Fig. 2C is an explanatory view for explaining a method of manufacturing the thermistor of the first embodiment.

Fig. 2D is an explanatory view for explaining a method of manufacturing the thermistor of the first embodiment.

Fig. 3 is a cross-sectional view taken along the line LT of the thermal resistor of the second embodiment.

Fig. 4A is an explanatory view for explaining a method of manufacturing the thermistor of the second embodiment.

Fig. 4B is an explanatory view for explaining a method of manufacturing the thermistor of the second embodiment.

Fig. 4C is an explanatory view for explaining a method of manufacturing the thermistor of the second embodiment.

Fig. 4D is an explanatory view for explaining a method of manufacturing the thermistor of the second embodiment.

Fig. 5 is a cross-sectional view taken along the line LT of the thermal resistor of the third embodiment.

Fig. 6A is an explanatory view for explaining a method of manufacturing the thermal resistor of the third embodiment.

Fig. 6B is an explanatory view for explaining a method of manufacturing the thermal resistor of the third embodiment.

Fig. 6C is an explanatory view for explaining a method of manufacturing the thermistor of the third embodiment.

Fig. 6D is an explanatory view for explaining a method of manufacturing the thermistor of the third embodiment.

Fig. 6E is an explanatory view for explaining a method of manufacturing the thermistor of the third embodiment.

Fig. 7A is an explanatory view for explaining a method of manufacturing the thermal resistor of the fourth embodiment.

Fig. 7B is an explanatory view for explaining a method of manufacturing the thermistor of the fourth embodiment.

Fig. 7C is an explanatory view for explaining a method of manufacturing the thermistor of the fourth embodiment.

Fig. 7D is an explanatory view for explaining a method of manufacturing the thermal resistor of the fourth embodiment.

Fig. 7E is an explanatory view for explaining a method of manufacturing the thermistor of the fourth embodiment.

Fig. 8 is a cross-sectional view taken along the line LT of the thermal resistor of the fifth embodiment.

Fig. 9A is an explanatory view for explaining a method of manufacturing the thermistor of the fifth embodiment.

Fig. 9B is an explanatory view for explaining a method of manufacturing the thermistor of the fifth embodiment.

Fig. 9C is an explanatory view for explaining a method of manufacturing the thermal resistor of the fifth embodiment.

Fig. 9D is an explanatory view for explaining a method of manufacturing the thermistor of the fifth embodiment.

Fig. 9E is an explanatory view for explaining a method of manufacturing the thermistor of the fifth embodiment.

Fig. 9F is an explanatory view for explaining a method of manufacturing the thermistor of the fifth embodiment.

Fig. 9G is an explanatory view for explaining a method of manufacturing the thermistor of the fifth embodiment.

Fig. 10A is an explanatory view showing a method of manufacturing the thermal resistor of the sixth embodiment.

Fig. 10B is an explanatory view for explaining a method of manufacturing the thermistor of the sixth embodiment.

Fig. 10C is an explanatory view for explaining the method of manufacturing the thermistor of the sixth embodiment.

Fig. 10D is an explanatory view for explaining a method of manufacturing the thermistor of the sixth embodiment.

Fig. 10E is an explanatory view for explaining a method of manufacturing the thermistor of the sixth embodiment.

Fig. 11A is an explanatory view for explaining a method of manufacturing the thermal resistor of the seventh embodiment.

Fig. 11B is an explanatory view for explaining a method of manufacturing the thermal resistor of the seventh embodiment.

Fig. 11C is an explanatory view for explaining a method of manufacturing the thermistor of the seventh embodiment.

Fig. 11D is an explanatory view showing a method of manufacturing the thermal resistor of the seventh embodiment.

Fig. 11E is an explanatory view for explaining a method of manufacturing the thermistor of the seventh embodiment.

Fig. 12A is an explanatory view for explaining a method of manufacturing the thermal resistor of the eighth embodiment.

Fig. 12B is an explanatory view for explaining a method of manufacturing the thermistor of the eighth embodiment.

Fig. 12C is an explanatory view for explaining a method of manufacturing the thermal resistor of the eighth embodiment.

Fig. 12D is an explanatory view for explaining a method of manufacturing the thermistor of the eighth embodiment.

Fig. 12E is an explanatory view for explaining a method of manufacturing the thermistor of the eighth embodiment.

Fig. 12F is an explanatory view for explaining a method of manufacturing the thermistor of the eighth embodiment.

Fig. 13A is an explanatory view for explaining a method of manufacturing the thermistor of the ninth embodiment.

Fig. 13B is an explanatory view for explaining a method of manufacturing the thermistor of the ninth embodiment.

Fig. 13C is an explanatory view for explaining a method of manufacturing the thermistor of the ninth embodiment.

Fig. 13D is an explanatory view for explaining a method of manufacturing the thermistor of the ninth embodiment.

Fig. 13E is an explanatory view for explaining a method of manufacturing the thermistor of the ninth embodiment.

Fig. 13F is an explanatory view for explaining a method of manufacturing the thermistor of the ninth embodiment.

Fig. 14A is an explanatory view for explaining a method of manufacturing the thermal resistor of the tenth embodiment.

Fig. 14B is an explanatory view for explaining a method of manufacturing the thermistor of the tenth embodiment.

Fig. 14C is an explanatory view for explaining a method of manufacturing the thermistor of the tenth embodiment.

Fig. 14D is an explanatory view for explaining a method of manufacturing the thermistor of the tenth embodiment.

Fig. 14E is an explanatory view for explaining a method of manufacturing the thermistor of the tenth embodiment.

Fig. 14F is an explanatory view for explaining a method of manufacturing the thermistor of the tenth embodiment.

Fig. 14G is an explanatory view for explaining a method of manufacturing the thermal resistor of the tenth embodiment.

Fig. 14H is an explanatory view showing a method of manufacturing the thermistor of the tenth embodiment.

Figure 15A is a perspective view showing an electronic device including the thermistor of the present invention.

Figure 15B is a cross-sectional view taken along line A-A of Figure 15A.

Hereinafter, the present invention will be described in detail by way of embodiments shown in the drawings.

(First embodiment)

Fig. 1A is a plan view showing a thermal resistor according to a first embodiment of the present invention. Fig. 1B is a cross-sectional view of the thermistor. As shown in FIG. 1A and FIG. 1B, the thermal resistor 1 as an example of an electronic component has a green body 10, first electrodes 21 and second electrodes 22 exposed from the surface of the green body 10, and a blank body 10 The first protective layer 41 on the opposite side of the first and second electrodes 21 and 22.

The green body 10 is composed of a plurality of ceramic layers, and a plurality of ceramic layers are integrally laminated. The ceramic layer contains, for example, a ceramic having a negative resistance temperature characteristic. That is, the thermistor 1 is an NTC (Negative Temperature Coefficient) thermal resistor, and the resistance value decreases as the temperature rises. As the ceramic, for example, various materials containing Mn, Ni, Fe, Ti, Co, Al, Zn, or the like in an appropriate amount in any appropriate group can be used. Actually, as the ceramic, the oxide of the above transition metal element is used for mixing, but a carbonate, a hydroxide or the like of the above element may be used as a starting material.

The blank 10 has a longitudinal direction (L direction), a width direction (W direction), and a thickness direction (T direction). Specifically, the green body 10 is formed in a substantially rectangular parallelepiped shape. The blank 10 has a first surface 10a and a second surface 10b on the opposite side to the first surface 10a. The first surface 10a and the second surface 10b are surfaces (LW surfaces) including the longitudinal direction and the width direction of the green body 10.

The first surface 10a of the blank 10 has a polished surface. The polishing surface means a surface having at least two polishing marks in a size of 0.1 mm × 0.1 mm and at least two polishing marks are substantially parallel. Furthermore, it is not necessary for all the grinding marks to be substantially parallel. Moreover, the width and depth of the polishing marks are not limited.

The first electrode 21 and the second electrode 22 are exposed from the first surface 10a of the green body 10. Specifically, The first surface 10a of the blank 10 is provided with a concave portion, and the first and second electrodes 21 and 22 are disposed in the concave portion. The upper surface of the first and second electrodes 21 and 22 in the T direction is flush with the first surface 10a of the green body 10.

The first electrode 21 and the second electrode 22 are arranged apart from each other in the L direction. The first and second electrodes 21 and 22 have a rectangular shape in plan view, but may have a shape other than a rectangle. As the material of the first and second electrodes 21 and 22, for example, a noble metal such as Ag, Pd, Pt, or Au, or a simple metal such as Cu, Ni, Al, W, or Ti, or an alloy containing the elemental materials may be used.

The first and second electrodes 21 and 22 are located further inside than the first surface 10a of the blank 10 in plan view. Specifically, the end faces of the first and second electrodes 21 and 22 in the L direction are located further inside than the end faces of the green body 10 in the L direction in plan view. In addition, the end faces of the first and second electrodes 21 and 22 in the L direction may be arranged to coincide with the end faces of the green body 10 in the L direction.

The first protective layer 41 is disposed on the second surface 10b of the green body 10. The first protective layer 41 contains, for example, a resin.

The thickness T1 of the thermistor 1 corresponds to the length between the first surface 10a of the green body 10 and the lower surface of the first protective layer 41. The thickness T1 of the thermistor 1 is smaller than the length and width of the thermistor 1. Specifically, the thickness T1 of the thermistor 1 is 30 μm or more and 100 μm or less, preferably 50 μm or more and 100 μm or less. Thereby, the thermistor 1 can be made low-profile. Furthermore, the thickness of the thermistor 1 can also be greater than 100 μm.

The size of the thermistor 1 is, for example, a JIS standard 0603 size. The JIS standard 0603 size means (0.6 ± 0.03) mm (L direction) × (0.3 ± 0.03) mm (W direction). Furthermore, the size of the thermistor 1 may be other sizes such as JIS standard 1005 size or JIS standard 1608 size.

Next, the operation of the thermistor 1 will be described. When the first electrode 21 is energized, the second electrode 22 is applied from the first electrode 21 to the second electrode 22 via the blank 10 . The higher the temperature of the green body 10, the lower the electric resistance of the green body 10, and the easier the electric current flows.

Next, a method of manufacturing the above-described thermistor 1 will be described.

First, as shown in FIG. 2A, the first ceramic layer 11 and the first and second electrodes 21 and 22 are sequentially laminated in the thickness direction (T direction), and further, the first and second electrodes 21 and 22 are covered. The second ceramic layer 12 is laminated on the first ceramic layer 11 to form a laminated body 50. This is called a layering step. The laminated body 50 is formed to be thicker than a target value corresponding to the thickness T1 (see FIG. 1B) of the thermistor 1. Here, the target value refers to the thickness of the sintered body 51 for realizing the thickness T1 of the final thermistor 1, and is obtained by subtracting the thickness of the first protective layer 41 from the thickness T1 of the thermistor 1. . Further, the first and second ceramic layers 11 and 12 may each be composed of a plurality of sheet-like bodies formed by lamination.

Thereafter, as shown in FIG. 2B, the laminated body 50 is fired to produce a fired body 51. This is called a firing step. Then, the first protective layer 41 is provided on the side opposite to the first and second electrodes 21 and 22 of the first ceramic layer 11. This is called a protection step. The first protective layer 41 contains, for example, a resin, and is bonded to the first ceramic layer 11 and then cured.

Then, as shown in FIG. 2C, one portion of the fired body 51 is polished in the thickness direction (T direction) so that the thickness of the fired body 51 becomes a target value. This is called a grinding step. In the polishing step, one of the second ceramic layer 12 and one of the first and second electrodes 21 and 22 are polished so that the first and second electrodes 21 and 22 are exposed from the second ceramic layer 12. The polished portion of the fired body 51 is indicated by hatching in the figure. The grinding portion is polished, for example, in the thickness direction T using a grinding wheel. Further, one of the first and second electrodes 21 and 22 may be polished, and only one of the second ceramic layers 12 may be polished, and the first and second electrodes 21 and 22 may be exposed from the second ceramic layer 12. .

Thereby, as shown in FIG. 2D, the upper surface (first surface 10a) of the green body 10 and the upper surfaces of the first and second electrodes 21 and 22 are flush with each other, and the above-described thermal resistor 1 can be produced. The first surface 10a of the blank 10 is a polished surface that is polished in the polishing step.

According to the manufacturing method of the above-described thermal resistor 1, the laminated body 50 having a target value thicker than the thickness T1 of the thermal resistor 1 is produced, and then the laminated body 50 is fired to produce a fired body 51. Thus, since the thickness of the laminated body 50 is thick, it is possible to suppress the lamination in the firing step in the firing step. The warp of the body 50 is produced. On the other hand, when the thickness of the laminated body is thin, there is a possibility that warpage occurs in the laminated body during firing. The reason is considered to be the aspect ratio of the laminate. In other words, when the longitudinal direction and the lateral direction of the laminated body are relatively large, that is, the length L is larger than the thickness T and is greater than or equal to a specific ratio, warpage may occur in the firing of the laminated body. Therefore, in the present invention, by making the thickness of the laminated body thicker than the target value corresponding to the thickness of the thermal resistor, the aspect ratio is reduced, and the occurrence of warpage of the laminated body during firing is surely suppressed. Therefore, the occurrence of warpage of the fired body 51 is suppressed, and the heat-resistant resistor 1 without warping can be produced. Therefore, in the equipment of the subsequent step (for example, the feeding portion of the characteristic screening machine, etc.), the conveyance failure of the thermistor 1 is improved, the equipment operation rate and the yield are improved, and the manufacturing cost is lowered.

In addition, since the first protective layer 41 is provided on the opposite side of the first ceramic layer 11 from the second ceramic layer 12, the strength of the fired body 51 can be strengthened and then polished. In the step, cracking of the fired body 51B in the grinding step can be suppressed.

According to the above-described thermistor 1, the first surface 10a of the green body 10 has a polishing surface. Therefore, when the heat resistor 1 is manufactured, the thickness of the green body 10 can be made thicker, and thereafter, the green body 10 can be ground to a specific thickness. As described above, since the thickness of the green body 10 can be made thick, it is possible to suppress warpage of the green body 10 during firing. Therefore, the occurrence of warpage of the blank 10 is suppressed, and the warp resistor 1 without warpage can be produced. Therefore, in the equipment of the subsequent step (for example, the feeding portion of the characteristic screening machine, etc.), the conveyance failure of the thermistor 1 is improved, the equipment operation rate and the yield are improved, and the manufacturing cost is lowered.

When the first and second electrodes 21 and 22 of the thermistor 1 are mounted on the mounting substrate, the first protective layer 41 of the thermistor 1 is located on the opposite side of the mounting substrate (hereinafter referred to as Non-installed surface). Therefore, since the non-mounting surface of the thermistor 1 is the first protective layer 41, the insulation of the non-mounting surface of the thermistor 1 can be ensured.

Further, since the first protective layer 41 is provided on the second surface 10b of the green body 10, the green body 10 having a weak reinforcing strength can be used by the first protective layer 41, and the strength of the thermal resistor 1 can be improved.

(Second embodiment)

Fig. 3 is a cross-sectional view showing a thermal resistor according to a second embodiment of the present invention. In the second embodiment, the same reference numerals as in the first embodiment are the same as those in the first embodiment, and thus the description thereof will be omitted.

As shown in FIG. 3, the thermal resistor 1A of the second embodiment differs from the thermal resistor 1 of the first embodiment (FIG. 1B) in the positions of the first and second electrodes 21 and 22. In the second embodiment, the first and second electrodes 21 and 22 are disposed on the first surface 10a of the blank 10. In other words, the upper surfaces of the first and second electrodes 21 and 22 are located on the upper side of the first surface 10a. The second surface 10b of the blank 10 has a polished surface. The thickness T1 of the thermistor 1A corresponds to the length between the upper surface of the first and second electrodes 21 and 22 and the lower surface of the first protective layer 41.

Next, a method of manufacturing the above-described thermistor 1A will be described.

First, as shown in FIG. 4A, the first ceramic layer 11 and the first and second electrodes 21 and 22 are sequentially laminated to form a laminated body 50A (layering step). The first and second electrodes 21 and 22 are formed, for example, by sputtering or printing. The laminated body 50A is formed to be thicker than a target value corresponding to the thickness T1 (see FIG. 3) of the thermistor 1A. Here, the target value refers to a value obtained by subtracting the thickness of the first protective layer 41 from the thickness T1 of the thermistor 1A.

Then, as shown in FIG. 4B, the laminated body 50A is fired to produce a fired body 51A (baking step). Then, one portion of the fired body 51A is polished (grinding step) so that the thickness of the fired body 51A becomes a target value. That is, the opposite side of the first ceramic layer 11 from the first and second electrodes 21 and 22 is polished. The polished portion of the fired body 51A is indicated by hatching in the figure. Thus, as shown in FIG. 4C, a fired body 51A having a thickness of a target value is produced.

Then, as shown in FIG. 4D, the first protective layer 41 is provided on the opposite side of the first ceramic layer 11 from the first and second electrodes 21 and 22 (protection step). The first protective layer 41 contains, for example, a resin, and is adhered to the first ceramic layer 11 and then cured. Thereby, the above-described thermistor 1A is produced. The second surface 10b of the blank 10 is a polished surface that is polished in the polishing step.

According to the method of manufacturing the above-described thermistor 1A, the same effect as the method of manufacturing the thermistor 1 of the first embodiment is obtained. Also, since it has the first ceramic layer after the grinding step Since the protective step of the first protective layer 41 is provided on the opposite side of the first and second electrodes 21 and 22, the strength of the thermistor 1A can be improved.

According to the above-described thermistor 1A, the same effect as that of the thermistor 1 of the first embodiment is obtained. Further, the first and second electrodes 21 and 22 may be formed after the firing step. In other words, the sintered body 51A in which the first ceramic layer 11 and the first electrode 21 and the second electrode 22 are laminated in the thickness direction is formed (the sintered body production step). The fired body production step includes a lamination step and a firing step.

(Third embodiment)

Fig. 5 is a cross-sectional view showing a thermal resistor according to a third embodiment of the present invention. In the third embodiment, the same reference numerals as in the first embodiment are the same as those in the first embodiment, and thus the description thereof will be omitted.

As shown in FIG. 5, the thermal resistor 1B of the third embodiment differs from the thermal resistor 1 of the first embodiment (FIG. 1B) in the positions of the first and second electrodes 21 and 22. In the third embodiment, the first and second electrodes 21 and 22 are disposed on the first surface 10a of the blank 10. In other words, the upper surfaces of the first and second electrodes 21 and 22 are located above the first surface 10a. The first surface 10a of the blank 10 has a polished surface. The thickness T1 of the thermistor 1B corresponds to the length between the upper surface of the first and second electrodes 21 and 22 and the lower surface of the first protective layer 41.

Next, a method of manufacturing the above-described thermistor 1B will be described.

First, as shown in FIG. 6A, a layered body 50B including at least the first ceramic layer 11 is produced (layering step). The laminated body 50B is formed to be thicker than a target value corresponding to the thickness T1 (see FIG. 5) of the thermal resistor 1B. Here, the target value is a value obtained by subtracting the thickness of the first protective layer 41 and the thicknesses of the first and second electrodes 21 and 22 from the thickness T1 of the thermal resistor 1B.

Then, as shown in FIG. 6B, the laminated body 50B is fired to produce a fired body 51B (baking step). Then, the first protective layer 41 is provided on the side opposite to the polishing side of the fired body 51B (protection step).

Thereafter, as shown in FIG. 6C, the thickness of the fired body 51B is set to a target value. A portion of the adult 51B is subjected to grinding (grinding step). The polished portion of the fired body 51B is indicated by hatching in the figure. Thus, as shown in FIG. 6D, the fired body 51B having the thickness of the target value and provided with the first protective layer 41 is produced.

Then, as shown in FIG. 6E, the first and second electrodes 21 and 22 are formed on the first surface 51a of the sintered body 51B (the first surface 10a of the green body 10) (electrode forming step), and the pattern of FIG. 5 is produced. Shown the thermal resistor 1B. At this time, the first surface 51a of the fired body 51B is the surface on the polishing side. The first and second electrodes 21 and 22 are formed, for example, by sputtering or printing.

According to the method of manufacturing the above-described thermistor 1B, the same effect as the method of manufacturing the thermistor 1 of the first embodiment is obtained. Further, since the first and second electrodes 21 and 22 are formed after the polishing step, damage of the first and second electrodes 21 and 22 due to polishing can be prevented.

According to the above-described thermistor 1B, the same effect as that of the thermistor 1 of the first embodiment is obtained.

(Fourth embodiment)

7A to 7E are cross-sectional views showing a method of manufacturing a thermal resistor according to a fourth embodiment of the present invention. In the fourth embodiment, the same reference numerals as in the third embodiment are the same as those in the third embodiment, and thus the description thereof will be omitted.

In the method of manufacturing the thermistor of the third embodiment (FIG. 6A to FIG. 6E), the first protective layer is provided before the polishing step, but in the method of manufacturing the thermal resistor according to the sixth embodiment, after the polishing step The first protective layer.

As shown in FIG. 7A, a layered body 50B including at least the first ceramic layer 11 is produced (layering step). The laminated body 50B is formed to be thicker than a target value corresponding to the thickness T1 (see FIG. 5) of the thermal resistor 1B. Here, the target value is a value obtained by subtracting the thickness of the first protective layer 41 and the thicknesses of the first and second electrodes 21 and 22 from the thickness T1 of the thermal resistor 1B.

Then, as shown in FIG. 7B, the laminated body 50B is fired to produce a fired body 51B (baking step). Then, one portion of the fired body 51B is polished (grinding step) so that the thickness of the fired body 51B becomes a target value. The polishing portion of the fired body 51B is indicated by hatching in the figure. Minute. Thus, as shown in FIG. 7C, a fired body 51B having a thickness of a target value is produced.

Then, as shown in FIG. 7D, the first and second electrodes 21 and 22 are formed on the first surface 51a of the fired body 51B (electrode forming step). At this time, the first surface 51a of the fired body 51B is a surface on the non-polishing side. The first and second electrodes 21 and 22 are formed, for example, by sputtering or printing.

Thereafter, as shown in FIG. 7E, the first protective layer 41 is provided on the second surface 51b of the fired body 51B (protection step). At this time, the second surface 51b of the fired body 51B is the surface on the polishing side. That is, the second surface 10b of the green body 10 serves as a polishing surface to be polished in the polishing step.

Furthermore, as long as the protective step is located after the grinding step, it may be before the electrode forming step. Further, the first and second electrodes 21 and 22 may be formed before the polishing step. In other words, the sintered body 51B in which the first ceramic layer 11 and the first electrode 21 and the second electrode 22 are laminated in the thickness direction is formed (the fired body production step). The fired body production step includes a lamination step and a firing step.

(Fifth Embodiment)

Fig. 8 is a cross-sectional view showing a thermal resistor according to a fifth embodiment of the present invention. In the fifth embodiment, the same reference numerals as in the second embodiment are the same as those in the second embodiment, and thus the description thereof will be omitted.

As shown in FIG. 8, the thermistor 1C of the fifth embodiment is different from the thermistor 1A of the second embodiment (FIG. 3) in that it has the second protective layer 42. In the fifth embodiment, the second protective layer 42 is provided on the entire surface of the first surface 10a of the blank 10 except for the region overlapping the first and second electrodes 21 and 22. The second protective layer 42 contains, for example, a resin. A plating layer 45 is provided on the first and second electrodes 21 and 22. The plating layer 45 contains, for example, Ni/5n or Ni/Cu or Cu. The thickness T1 of the thermistor 1C corresponds to the length between the upper surface of the plating layer 45 and the lower surface of the first protective layer 41. Further, the plating layer 45 may be omitted. The second surface 10b of the blank 10 has a polished surface.

Next, a method of manufacturing the above-described thermistor 1C will be described.

First, as shown in FIG. 9A, the first ceramic layer 11 and the first and second electrodes 21 are sequentially laminated. 22, a laminate 50C is produced (layering step). The first and second electrodes 21 and 22 are formed, for example, by sputtering or printing. The laminated body 50C is formed to be thicker than a target value corresponding to the thickness T1 (see FIG. 8) of the thermistor 1C. Here, the target value is substantially a value obtained by subtracting the thickness of the first protective layer 41 from the thickness T1 of the thermistor 1C.

Then, as shown in FIG. 9B, the laminated body 50C is fired to produce a fired body 51C (baking step). Then, one portion of the fired body 51C is polished (grinding step) so that the thickness of the fired body 51C becomes a target value. That is, the opposite side of the first ceramic layer 11 from the first and second electrodes 21 and 22 is polished. The polished portion of the fired body 51C is indicated by hatching in the figure. Thus, as shown in FIG. 9C, the fired body 51C having the thickness of the target value was produced.

Then, as shown in FIG. 9D, the first protective layer 41 is provided on the opposite side of the first ceramic layer 11 from the first and second electrodes 21 and 22, and the first and second electrodes 21 and 22 are covered. A second protective layer 42 is provided on the ceramic layer 11 (protection step). The first protective layer 41 contains, for example, a resin, and is adhered to the first ceramic layer 11 and then cured. The second protective layer 42 contains, for example, a resin and is adhered to the first ceramic layer 11 and then cured.

Then, as shown in FIG. 9E, one of the second protective layer 42 and one of the first and second electrodes 21 and 22 are partially exposed so that the first and second electrodes 21 and 22 are exposed from the second protective layer 42. Grinding (protective layer grinding step). The ground portion is indicated by hatching in the figure. Further, one of the first and second electrodes 21 and 22 may be polished, and only one of the second protective layers 42 may be polished to expose the first and second electrodes 21 and 22 from the second protective layer 42. Thus, as shown in FIG. 9F, the first and second electrodes 21 and 22 are exposed from the second protective layer 42.

Then, as shown in FIG. 9G, a plating layer 45 is provided on the upper surfaces of the first and second electrodes 21 and 22 to form the above-described thermal resistor 1C. Further, the plating layer 45 may be omitted.

According to the above-described thermistor 1C, the same effect as the thermistor 1C of the second embodiment is obtained. In addition, since the second protective layer 42 is provided on the first surface 10a of the green body 10 except for the region overlapping the first and second electrodes 21 and 22, the first and second electrodes 21 are provided. When the plating layer 45 is provided, the plating layer 45 can be prevented from facing the second surface 10b of the blank 10. Corrosion. Further, since the second protective layer 42 is provided in the region between the first electrode 21 and the second electrode 22 on the first surface 10a of the green body 10, the migration of the first and second electrodes 21 and 22 can be suppressed. .

According to the method of manufacturing the above-described thermistor 1C, the same effect as the method of manufacturing the thermistor 1C of the second embodiment is obtained. Further, since the first protective layer 41 is provided on the opposite side of the first ceramic layer 11 from the first and second electrodes 21 and 22, the strength of the thermal resistor 1C can be improved. In addition, since the second protective layer 42 is provided on the first ceramic layer 11, the second protective layer 42 is provided between the first electrode 21 and the second electrode 22, and the first and second electrodes 21 and 22 can be suppressed. The emergence of migration. Further, since the second protective layer 42 is provided on the first ceramic layer 11, when the plating layer 45 is provided on the first and second electrodes 21 and 22, the plating layer 45 can be prevented from being applied to the first ceramic layer. 11 corrosion.

Further, the first and second electrodes 21 and 22 may be formed after the firing step. In other words, the sintered body 51C in which the first ceramic layer 11 and the first electrode 21 and the second electrode 22 are laminated in the thickness direction is formed (the sintered body production step). The fired body production step includes a lamination step and a firing step.

Further, the second protective layer 42 may be provided on the second ceramic layer 12 so as to cover the first electrode 21 and the second electrode 22 after the baking step and before the polishing step (upper side protection step). Thereby, the polishing step can be performed after the strength of the fired body 51C is strengthened, and cracking of the fired body 51C in the polishing step can be suppressed. In this case, after the polishing step, the first protective layer 41 is provided on the side opposite to the internal electrode 30 of the first ceramic layer 11 (lower side protection step).

(Sixth embodiment)

10A to 10E are cross-sectional views showing a method of manufacturing a thermal resistor according to a sixth embodiment of the present invention. In the sixth embodiment, the same reference numerals as in the first embodiment are the same as those in the first embodiment, and thus the description thereof will be omitted.

The method of manufacturing the thermistor of the first embodiment (Figs. 1A to 1D) is a method of manufacturing a single thermistor, but the method of manufacturing the thermistor of the sixth embodiment is a system of a plurality of thermistors. Method of making.

As shown in FIG. 10A, the first ceramic layer 11 and the plurality of first and second electrodes 21 and 22 are sequentially laminated, and further, the first ceramic layer 11 is covered so as to cover the plurality of first and second electrodes 21 and 22. The second ceramic layer 12 is laminated to form a layered body 50D (layering step). At this time, the first and second ceramic layers 11 and 12 are formed into a sheet shape. Further, the first and second electrodes 21 and 22 corresponding to the region of one of the heat resistors 1 are provided in a complex array, and are arranged in an array along the LW surface. One set of the first and second electrodes 21, 22 corresponds to one thermistor 1. The laminated body 50D is formed to be thicker than a target value corresponding to the thickness T1 (see FIG. 1B) of the thermistor 1. Here, the target value refers to a value obtained by subtracting the thickness of the first protective layer 41 from the thickness T1 of the thermistor 1.

Then, as shown in FIG. 10B, the laminated body 50D is fired to produce a fired body 51D (baking step). Then, the first protective layer 41 is provided on the side opposite to the first and second electrodes 21 and 22 of the first ceramic layer 11 (protection step). The first protective layer 41 is formed in a sheet shape. The first protective layer 41 contains, for example, a resin, and is adhered to the first ceramic layer 11 and then cured.

Then, as shown in FIG. 10C, one portion of the fired body 51D is polished (grinding step) so that the thickness of the fired body 51D becomes a target value. In the polishing step, one of the second ceramic layer 12 and one of the first and second electrodes 21 and 22 are polished so that the first and second electrodes 21 and 22 are exposed from the second ceramic layer 12. The polished portion of the fired body 51D is indicated by hatching in the figure.

Then, as shown in FIG. 10D, the fired body 51D having the target thickness is cut for each of the first and second electrodes 21 and 22 (that is, the area of each of the heat resistors 1). Cut off step). That is, the complex array first and second electrodes 21 and 22 are adjacent to each other along the LW plane, and the adjacent portion is cut. Thereby, as shown in FIG. 10E, a plurality of thermistors 1 are fabricated. The complex array first and second electrodes 21 and 22 correspond to a plurality of thermistors 1.

According to the method of manufacturing the above-described thermistor 1, the same effect as the method of manufacturing the thermistor 1 of the first embodiment is obtained. Here, in general, when the sheet-like laminated body is fired, the aspect ratio of the laminated body becomes large (that is, the length L is very large compared to the thickness T). Therefore, it is easy to cause warpage in the laminate in the firing. Therefore, in the present invention, by increasing the thickness of the sheet-like laminated body 50D, the aspect ratio of the laminated body 50D is reduced, and the occurrence of warpage of the laminated body 50D during firing is suppressed.

In addition, after the polishing step, the firing step 51D is cut by the first and second electrodes 21 and 22, so that the sintered body 50D before the cutting is performed. Grinding can improve productivity, and can reduce the load of grinding to produce a damage-free thermal resistor 1. In addition, since the first protective layer 41 is provided on the opposite side of the first ceramic layer 11 from the first and second electrodes 21 and 22 before the cutting step, it is easy to burn the large block before the cutting. The first protective layer 41 is attached to the adult body 51D.

(Seventh embodiment)

11A to 11E are cross-sectional views showing a method of manufacturing a thermal resistor according to a seventh embodiment of the present invention. In the seventh embodiment, the same reference numerals as in the second embodiment are the same as those in the second embodiment, and thus the description thereof will be omitted.

The method of manufacturing the thermistor of the second embodiment (Figs. 4A to 4D) is a method of manufacturing a single thermistor, but the method of manufacturing the thermistor of the seventh embodiment is a method of manufacturing a plurality of thermistors.

As shown in FIG. 11A, the first ceramic layer 11 and the plurality of first and second electrodes 21 and 22 are sequentially laminated to form a laminated body 50E (layering step). The first and second electrodes 21 and 22 are formed, for example, by sputtering or printing. At this time, the first ceramic layer 11 is formed into a sheet shape. Further, the first and second electrodes 21 and 22 corresponding to the region of one of the thermal resistors 1A are arranged in a complex array, and are arranged in an array along the LW surface. The laminated body 50E is formed to be thicker than a target value corresponding to the thickness T1 (see FIG. 3) of the thermistor 1A. Here, the target value refers to a value obtained by subtracting the thickness of the first protective layer 41 from the thickness T1 of the thermistor 1A.

Then, as shown in FIG. 11B, the laminated body 50E is fired to produce a fired body 51E (baking step). Then, one portion of the fired body 51E is polished (grinding step) so that the thickness of the fired body 51E becomes a target value. In the grinding step, the first ceramic layer 11 is polished on the opposite side to the first and second electrodes 21 and 22. The polished portion of the fired body 51E is indicated by hatching in the drawing. Thus, as shown in FIG. 11C, a fired body 51E having a target thickness is produced.

Thereafter, as shown in FIG. 11D, the first protective layer 41 is provided on the side opposite to the first and second electrodes 21 and 22 of the first ceramic layer 11 (protection step). The first protective layer 41 is formed in a sheet shape. The first protective layer 41 contains, for example, a resin, and is adhered to the first ceramic layer 11 and then cured.

Thereafter, the fired body 51E provided with the first protective layer 41 is cut for each set of the first and second electrodes 21 and 22 (that is, the region of each of the heat resistors 1A) (cutting step) . That is, the complex array first and second electrodes 21 and 22 are adjacent to each other along the LW plane, and the adjacent portion is cut. Thereby, as shown in FIG. 11E, a plurality of thermistors 1A are fabricated.

According to the method of manufacturing the above-described thermistor 1A, the same effect as the method of manufacturing the thermistor 1A of the second embodiment is obtained. In particular, the aspect ratio of the laminated body 50E is reduced by thickening the thickness of the sheet-like laminated body 50E, thereby suppressing the occurrence of warpage of the laminated body 50E during firing. In addition, after the polishing step, the firing step 51E is cut by the first and second electrodes 21 and 22, so that the sintered body 51E of the large block before the cutting is performed. Grinding can improve productivity, and can reduce the load of grinding to produce a damage-free thermal resistor 1A. In addition, since the first protective layer 41 is provided on the opposite side of the first ceramic layer 11 from the first and second electrodes 21 and 22 before the cutting step, it is easy to burn the large block before the cutting. The first protective layer 41 is attached to the adult body 51E.

Further, the first and second electrodes 21 and 22 may be formed after the firing step. In other words, the sintered body 51E in which the first ceramic layer 11 and the first electrode 21 and the second electrode 22 are laminated in the thickness direction is formed (the fired body production step). The fired body production step includes a lamination step and a firing step.

(Eighth embodiment)

12A to 12F are cross-sectional views showing a method of manufacturing a thermal resistor according to an eighth embodiment of the present invention. Furthermore, in the eighth embodiment, the same reference numerals as in the third embodiment are Since the third embodiment has the same configuration, the description thereof will be omitted.

The method of manufacturing the thermistor of the third embodiment (Figs. 6A to 6E) is a method of manufacturing a single thermistor, but the method of manufacturing the thermistor of the eighth embodiment is a method of manufacturing a plurality of thermistors.

As shown in FIG. 12A, a layered body 50F including the first ceramic layer 11 is produced (layering step). At this time, the first ceramic layer 11 is formed into a sheet shape. The laminated body 50F is formed to be thicker than a target value corresponding to the thickness T1 (see FIG. 5) of the thermal resistor 1B. Here, the target value is a value obtained by subtracting the thickness of the first protective layer 41 and the thicknesses of the first and second electrodes 21 and 22 from the thickness T1 of the thermal resistor 1B.

Then, as shown in FIG. 12B, the laminated body 50F is fired to produce a fired body 51F (baking step). Then, the first protective layer 41 is provided on the side opposite to the polishing side of the fired body 51F (protection step). The first protective layer 41 is formed in a sheet shape. The first protective layer 41 contains, for example, a resin, and is adhered to the first ceramic layer 11 and then cured.

Then, as shown in FIG. 12C, one portion of the fired body 51F is polished (grinding step) in the thickness direction (T direction) so that the thickness of the fired body 51F becomes a target value. The side opposite to the first protective layer 41 of the first ceramic layer 11 is polished. The polished portion of the fired body 51F is indicated by hatching in the drawing. Thus, as shown in FIG. 12D, the fired body 51F having the thickness of the target value and provided with the first protective layer 41 is produced.

Then, as shown in FIG. 12E, a plurality of first and second electrodes 21 and 22 are formed on the first surface 51a of the fired body 51F (electrode forming step). The first surface 51a of the fired body 51B is a surface on the polishing side. The first and second electrodes 21 and 22 are formed, for example, by sputtering or printing. At this time, the first and second electrodes 21 and 22 corresponding to the region of one thermal resistor 1B in the complex array are disposed, and are arranged in an array along the LW surface.

Thereafter, the fired body 51F is cut for each of the first and second electrodes 21 and 22 (that is, the region of each of the heat resistors 1B) (cutting step). That is, the complex array first and second electrodes 21 and 22 are adjacent to each other along the LW plane, and the adjacent portion is cut. Thereby, as shown in FIG. 12F, A plurality of thermistors 1B.

According to the method of manufacturing the above-described thermistor 1B, the same effect as the method of manufacturing the thermistor 1B of the third embodiment is obtained. In particular, the aspect ratio of the laminated body 50F is reduced by thickening the thickness of the sheet-like laminated body 50F, thereby suppressing the occurrence of warpage of the laminated body 50F during firing.

In addition, after the polishing step, the sintered body 51F is cut by the first and second electrodes 21 and 22, and the sintered body 50F before the cutting is polished. The product can be improved in productivity, and the damage of the grinding can be reduced to produce a damage-free thermal resistor 1B. Further, since the protective step of providing the first protective layer 41 on the opposite side of the first ceramic layer 11 from the first and second electrodes 21 and 22 before the cutting step is performed, it is easy to burn the large block before the cutting. The first protective layer 41 is attached to the body 51F.

(Ninth Embodiment)

13A to 13F are cross-sectional views showing a method of manufacturing a thermal resistor according to a ninth embodiment of the present invention. In the ninth embodiment, the same reference numerals as in the fourth embodiment are the same as those in the fourth embodiment, and thus the description thereof will be omitted.

The method of manufacturing the thermistor of the fourth embodiment (Figs. 7A to 7E) is a method of manufacturing a single thermistor, but the method of manufacturing the thermistor of the ninth embodiment is a method of manufacturing a plurality of thermistors.

As shown in FIG. 13A, a layered body 50G including the first ceramic layer 11 is produced (layering step). At this time, the first ceramic layer 11 is formed into a sheet shape. The laminated body 50G is formed to be thicker than a target value corresponding to the thickness T1 (see FIG. 5) of the thermal resistor 1B. Here, the target value is a value obtained by subtracting the thickness of the first protective layer 41 and the thicknesses of the first and second electrodes 21 and 22 from the thickness T1 of the thermal resistor 1B.

Then, as shown in FIG. 13B, the laminated body 50G is fired to produce a fired body 51G (baking step). Then, one portion of the fired body 51G is polished (grinding step) in the thickness direction (T direction) so that the thickness of the fired body 51G becomes a target value. Hatched in the figure The polished portion of the fired body 51G is shown. Thus, as shown in FIG. 13C, a fired body 51G having a target thickness is produced.

Then, as shown in FIG. 13D, a plurality of first and second electrodes 21 and 22 are formed on the first surface 51a of the fired body 51G (electrode forming step). At this time, the first surface 51a of the fired body 51G is a surface on the non-polishing side. The first and second electrodes 21 and 22 are formed, for example, by sputtering or printing. At this time, the first and second electrodes 21 and 22 corresponding to the region of one thermal resistor 1B in the complex array are disposed, and are arranged in an array along the LW surface.

Thereafter, as shown in FIG. 13E, the first protective layer 41 is provided on the second surface 51b of the fired body 51G (protection step). At this time, the second surface 51b of the fired body 51G is the surface on the polishing side. The first protective layer 41 is formed in a sheet shape. The first protective layer 41 contains, for example, a resin, and is adhered to the fired body 51G and then cured.

Thereafter, the fired body 51G is cut for each of the first and second electrodes 21 and 22 (that is, the region of each of the heat resistors 1B) (cutting step). That is, the complex array first and second electrodes 21 and 22 are adjacent to each other along the LW plane, and the adjacent portion is cut. Thereby, as shown in FIG. 13F, a plurality of thermistors 1B are produced.

Further, the protective step may be performed after the electrode forming step as long as it is located after the grinding step. Further, the first and second electrodes 21 and 22 may be formed before the polishing step. In other words, the sintered body 51G in which the first ceramic layer 11 and the first electrode 21 and the second electrode 22 are laminated in the thickness direction is formed (the fired body production step). The fired body production step includes a lamination step and a firing step.

According to the method of manufacturing the above-described thermistor 1B, the same effect as the method of manufacturing the thermistor 1B of the fourth embodiment is obtained. In particular, by increasing the thickness of the laminated body 50G by the thickness of the sheet-like laminated body 50G, the occurrence of warpage of the laminated body 50G during firing is suppressed.

In addition, since the firing step 51G has a cutting step of cutting the sintered body 51G for each of the first and second electrodes 21 and 22, the sintered body 50G before the cutting is performed. Grinding can improve productivity, and can reduce the load of grinding to produce a damage-free thermal resistor 1B. In addition, since the protective step of providing the first protective layer 41 on the opposite side to the first and second electrodes 21 and 22 of the fired body 51G is performed before the cutting step, it is easy to burn the large block before the cutting. The first protective layer 41 is attached to the 51G.

(Tenth embodiment)

14A to 14H are cross-sectional views showing a method of manufacturing a thermal resistor according to a tenth embodiment of the present invention. In the tenth embodiment, the same reference numerals as in the fifth embodiment are the same as those in the fifth embodiment, and thus the description thereof will be omitted.

The method of manufacturing the thermistor of the fifth embodiment (Figs. 9A to 9G) is a method of manufacturing a single thermistor, but the method of manufacturing the thermistor of the tenth embodiment is a method of manufacturing a plurality of thermistors.

As shown in FIG. 14A, the first ceramic layer 11 and the plurality of first and second electrodes 21 and 22 are sequentially laminated to form a laminated body 50H (layering step). The first and second electrodes 21 and 22 are formed, for example, by sputtering or printing. At this time, the first ceramic layer 11 is formed into a sheet shape. Further, the first and second electrodes 21 and 22 corresponding to the region of one thermal resistor 1C are provided in a complex array, and are arranged in an array along the LW surface. The laminated body 50H is formed to be thicker than a target value corresponding to the thickness T1 (see FIG. 8) of the thermistor 1C. Here, the target value roughly means a value obtained by subtracting the thickness of the first protective layer 41 from the thickness T1 of the thermistor 1C.

Then, as shown in FIG. 14B, the laminated body 50H is fired to produce a fired body 51H (baking step). Then, one portion of the fired body 51H is polished (grinding step) so that the thickness of the fired body 51H becomes a target value. The opposite side of the first ceramic layer 11 from the first and second electrodes 21 and 22 is polished. The polished portion of the fired body 51H is indicated by hatching in the figure. Thus, as shown in Fig. 14C, a fired body 51H having a target thickness is produced.

Then, as shown in FIG. 14D, the first protective layer 41 is provided on the opposite side of the first ceramic layer 11 from the first and second electrodes 21 and 22, and the first and second electrodes 21 and 22 are covered. The second protective layer 42 is provided on the first ceramic layer 11 (protection step). First and second protective layers 41 and 42 Formed into a sheet. The first protective layer 41 contains, for example, a resin, and is adhered to the first ceramic layer 11 and then cured. The second protective layer 42 contains, for example, a resin and is adhered to the second ceramic layer 12 and then cured.

Then, as shown in FIG. 14E, one of the second protective layer 42 and one of the first and second electrodes 21 and 22 are partially exposed so that the first and second electrodes 21 and 22 are exposed from the second protective layer 42. Grinding (protective layer grinding step). The ground portion is indicated by hatching in the figure. Thus, as shown in FIG. 14F, the fired body 51H which exposes the first and second electrodes 21 and 22 from the second protective layer 42 is produced.

Then, as shown in FIG. 14G, the fired body 51H provided with the first and second protective layers 41 and 42 is placed for each of the first and second electrodes 21 and 22 (that is, each of the heat resistors 1C). The area is cut off (cutting step). That is, the complex array first and second electrodes 21 and 22 are adjacent to each other along the LW plane, and the adjacent portion is cut.

Thereafter, as shown in FIG. 14H, a plating layer 45 is provided on the upper surfaces of the first and second electrodes 21 and 22 to form a plurality of thermistors 1C. Further, the plating layer 45 is provided after the cutting step, but the plating layer 45 may be provided before the cutting step.

According to the method of manufacturing the above-described thermistor 1C, the same effect as the method of manufacturing the thermistor 1C of the fifth embodiment is obtained. In particular, by reducing the aspect ratio of the laminated body 50H by thickening the thickness of the sheet-like laminated body 50H, it is possible to suppress warpage of the laminated body 50H during firing. In addition, after the polishing step, a step of cutting the sintered body 51H for each of the first and second electrodes 21 and 22 is performed, so that the sintered body 51H of the large block before cutting is polished. It can improve productivity and can reduce the load of grinding to produce a damage-free thermal resistor 1C. In addition, since the protective step of providing the first and second protective layers 41 and 42 is performed before the cutting step, the first and second protective layers 41 and 42 are easily attached to the fired body 51H before the cutting. .

Further, the first and second electrodes 21 and 22 may be formed after the firing step. In other words, the sintered body 51H in which the first ceramic layer 11 and the first electrode 21 and the second electrode 22 are laminated in the thickness direction is formed (the sintered body production step). The burned body production step includes lamination Step and firing step.

Further, after the firing step and before the polishing step, the second protective layer 42 may be provided on the second ceramic layer 12 so as to cover the first electrode 21 and the second electrode 22 (upper side protection step). Thereby, the strength of the fired body 51H can be increased, the polishing step can be performed, and the crack of the fired body 51H in the polishing step can be suppressed. In this case, the first protective layer 41 is also provided on the side opposite to the internal electrode 30 of the first ceramic layer 11 after the polishing step (lower side protection step).

(Eleventh embodiment)

Figure 15A is a perspective view showing an electronic device including the thermistor of the present invention. Figure 15B is a cross-sectional view taken along line A-A of Figure 15A. In the eleventh embodiment, the same reference numerals as in the first embodiment are the same as those in the first embodiment, and thus the description thereof will be omitted.

As shown in FIGS. 15A and 15B, the electronic device is a thermistor sensor 100. The thermistor sensor 100 includes the thermistor 1 of the first embodiment and the insulating member 128 covering the thermistor 1. In the figure, the thermistor 1 is disposed such that the first and second electrodes 21 and 22 face downward. Further, the thermal resistor of the first embodiment is used as the thermal resistor, but any of the thermal resistors of the second to fifth embodiments may be used.

On the lower surface of the first and second electrodes 21 and 22 of the thermistor 1, for example, a Sn-plated layer 124a, a Ni-plated layer 124b, and a Cu-plated layer 124c are sequentially formed as mounting electrodes. Further, a Cu foil 126 is formed on the lower surface of the Cu plating layer 124c.

The insulating member 128 is coated with the Sn layer 124a, the Ni plating layer 124b, and the Cu plating layer 124c together with the thermistor 1. The insulating member 128 is made of, for example, an insulating resin material containing no epoxy resin and having flexibility.

The thermistor sensor 100 contains, for example, a short strip of flexible insulating resin sheet 130 containing a polyimide resin. On the insulating resin sheet 130, two lead wires 132 having flexibility in a linear shape including a Cu foil are formed at intervals in the width direction of the insulating resin sheet 130. The intermediate portion in the longitudinal direction of the insulating resin sheet 130 and the intermediate portion in the longitudinal direction of the two leads 132 are covered with, for example, a polyimide resin. Flexible insulating resin material 134.

Each of the first and second electrodes 21 and 22 of the thermistor 1 is electrically connected to the lead via the Sn plating layer 124a, the Ni plating layer 124b, the Cu plating layer 124c, the Cu foil 126, and the conductive connecting material 140. One end of 132. The conductive connecting material 140 is, for example, solder or the like, and is disposed at one end of the lead 132.

The periphery of the Cu foil 126, the lead 132, and the conductive connecting member 140 is covered with an insulating resin material 142 which does not have flexibility, for example, including an epoxy resin. The thermal resistor 1 is followed by the insulating resin sheet 130 via the insulating resin material 142.

According to the above-described thermistor sensor 100, since the insulating member 128 covers the thermistor 1, the strength and reliability of the thermistor 1 can be ensured.

Further, the present invention is not limited to the above-described embodiments, and design changes can be made without departing from the spirit and scope of the invention. For example, the feature points of the first to eleventh embodiments can be variously combined.

In the above embodiment, the thermal resistor is an NTC thermal resistor, but a PTC (Positive Temperature Coefficient) thermal resistor may be used.

In the fifth embodiment, the second protective layer is provided on the first surface of the green body except for the region overlapping the first and second electrodes, but may be provided only on the first portion of the green body. The region between the first electrode and the second electrode on the surface can suppress the occurrence of migration between the first and second electrodes.

In the above embodiment, the electronic component is a thermistor, but may be a coil, an inductor, a coil, a capacitor, or the like.

In the eleventh embodiment, the electronic device is a thermal resistor sensor (so-called thin film type thermal resistance sensor) in which a thermal resistor is provided in a flexible insulating resin sheet, but For other thermistor sensors, or other electronic devices covered by the insulating members.

In the above embodiment, no electrode is provided in the body, but the body may be provided in the body. The internal electrode is placed, and the internal electrode is electrically connected to the first and second electrodes via the green body.

In the above embodiment, the polishing surface is provided on the first surface or the second surface of the green body. However, the polishing surface may be provided on the first surface and the second surface of the green body.

In the above embodiment, the first protective layer is provided, but the first protective layer may be omitted.

1‧‧‧Thermistor

10‧‧‧ Body

10a‧‧‧1st

10b‧‧‧2nd

21‧‧‧1st electrode

22‧‧‧2nd electrode

41‧‧‧1st protective layer

L‧‧‧ Length direction

T‧‧‧ thickness direction

Thickness of T1‧‧‧Thermistor

W‧‧‧Width direction

Claims (16)

A method for producing an electronic component, comprising: a step of producing a sintered body, wherein the sintered body is formed by laminating at least a first ceramic layer, a first electrode, and a second electrode in a thickness direction; and a polishing step And polishing a portion of the fired body in a thickness direction; and in the step of fabricating the fired body, further depositing a second ceramic layer on the first ceramic layer so as to cover the first electrode and the second electrode The fired body is produced; and in the polishing step, at least one of the second ceramic layers is polished so that the first electrode and the second electrode are exposed from the second ceramic layer. The method of producing an electronic component according to claim 1, wherein a step of protecting the first protective layer from the opposite side of the electrode of the first ceramic layer is provided between the firing step and the polishing step. A method of producing an electronic component according to claim 1, wherein in said polishing step, one of said first ceramic layers is polished. The method of producing an electronic component according to claim 3, wherein after the polishing step, a protective step of providing a first protective layer on a side opposite to the electrode of the first ceramic layer is provided. The method of manufacturing an electronic component according to claim 3, wherein after the polishing step, the step of protecting comprises providing a first protective layer on a side opposite to the electrode of the first ceramic layer, and covering the first electrode And the second electrode layer, wherein the first protective layer is provided on the first ceramic layer; and the protective layer polishing step is such that the first electrode and the second electrode are exposed from the second protective layer. At least one of the portions of the second protective layer is polished. The method of manufacturing an electronic component according to claim 3, further comprising: an upper side protecting step of providing the first ceramic layer on the second ceramic layer so as to cover the first external electrode and the second external electrode before the polishing step a protective layer, wherein after the polishing step, a first protective layer is provided on a side opposite to the internal electrode of the first ceramic layer; and a protective layer polishing step is performed after the lower protective step At least one of the second protective layers is polished so that the first outer electrode and the second outer electrode are exposed from the second protective layer. The method of manufacturing an electronic component according to claim 1, wherein the plurality of electronic components are manufactured; and in the step of fabricating the sintered body, the first electrode and the second electrode corresponding to a region of one electronic component are provided The electrode has a cutting step of cutting the fired body into a region of each electronic component after the polishing step. The method of producing an electronic component according to claim 7, wherein a step of providing a first protective layer on a side opposite to the electrode of the first ceramic layer is provided between the fired body forming step and the cutting step. A method for producing an electronic component, comprising: a lamination step of producing a laminate comprising at least a ceramic layer; and a firing step of firing the laminate to produce a sintered body; and a polishing step of thicknessing Polishing a portion of the fired body in a direction; and forming an electrode on the first surface of the fired body to form a first electrode and a second electrode; and between the baking step and the polishing step A protective step of providing the first protective layer on the side opposite to the polishing side of the fired body. A method for producing an electronic component, comprising: a lamination step of producing a laminate comprising at least a ceramic layer; and a firing step of firing the laminate to produce a sintered body; and a polishing step of thicknessing Polishing a portion of the fired body in a direction; and forming an electrode on the first surface of the fired body to form a first electrode and a second electrode; and after the polishing step, having a polishing side on the fired body Set the protection step of the first protective layer. A method of manufacturing an electronic component, comprising: a lamination step of producing a laminate comprising at least a ceramic layer; and a firing step of firing the laminate to prepare a firing a polishing step of polishing a portion of the fired body in a thickness direction; and an electrode forming step of forming a first electrode and a second electrode on the first surface of the fired body; and in the electrode forming step, The first electrode and the second electrode corresponding to a region of one electronic component are provided in a complex array; and after the electrode forming step, a cutting step of cutting the sintered body into a region of each electronic component is provided. The method of producing an electronic component according to claim 11, wherein a step of protecting the first protective layer on a side opposite to the electrode of the fired body is provided between the baking step and the cutting step. An electronic component comprising: a green body comprising a ceramic; a first electrode and a second electrode disposed separately from the first surface of the green body; and a first protective layer disposed on the green body 2nd on the opposite side of the first side At least one of the first surface and the second surface of the green body includes a polishing surface, and a region between the first electrode and the second electrode on the first surface of the green body includes a second surface The protective layer. The electronic component of claim 13, wherein the thickness of the electronic component is less than the length and width of the electronic component. The electronic component according to claim 13, wherein the second protective layer is provided on the first surface of the green body except for a region overlapping the first electrode and the second electrode. An electronic device comprising: the electronic component of any one of claims 13 to 15; and an insulating member covering the electronic component.