TWI584382B - Transistor voltage suppressor diode component and method of manufacturing same - Google Patents

Description

Transistor voltage suppressor diode component and method of manufacturing same

The present invention relates to transient voltage suppression, and more particularly to a low capacitance diode element of a Transient Voltage Suppressor (TVS) and a method of fabricating the same.

Since the Transient Voltage Suppressor (TVS) needs to conduct a high current in a short time, its components must have a large-area PN junction, and thus have a high parasitic capacitance, resulting in a slow operation speed.

In order to achieve low parasitic capacitance to increase the operating speed, it is conventionally used to connect two small-capacitance values on a path of a large-area unidirectional Zener diode ZD or a bidirectional Zener diode BZD. The mode of the body D is used to reduce the capacitance of the transient voltage suppressor, as shown in FIG. 1A to FIG. 1B, wherein FIG. 1A to FIG. 1B respectively show a conventional low-capacitance single-channel unidirectional transient voltage suppressor and a low-capacitance single. Schematic diagram of a channel bidirectional transient voltage suppressor.

Although the overall capacitance is reduced, the component area of the diode with a smaller capacitance value is relatively small, which also causes its protection against electrostatic discharge (ESD) and surge (Surge). Small-area diodes are relatively limited and relatively weak, so they cannot withstand higher power. Therefore, if you want to be able to withstand the energy of a larger power, As the area of the polar body increases, it is necessary to select more diodes D to reduce the capacitance, as shown in Figure 2A to Figure 2B. Figures 2A to 2B show the traditional low-capacitance multi-channel unidirectional transients. Schematic diagram of a voltage suppressor and a low capacitance multi-channel bidirectional transient voltage suppressor.

3A-3B are respectively schematic diagrams showing two different layered structures of a conventional diode element having an N-type substrate, and equivalent capacitances in a current path in the diode element.

However, once the number of diodes D connected in series is increased, the On-Resistance (Ron) becomes larger, so that the protection against electrostatic discharge and surge becomes more and more. Poor, this shortcoming has yet to be overcome.

In view of the above, the present invention provides a diode element of a transient voltage suppressor and a method of fabricating the same to solve the problems described in the prior art.

A preferred embodiment of the present invention is a diode element of a transient voltage suppressor. In this embodiment, the diode component includes a substrate, a first well region, a second well region, a first electrode, and a second electrode. The substrate has a first surface. A first well region is formed in the substrate adjacent to the first surface. A second well region is formed in the substrate adjacent to the first surface. There is a spacing between the first well region and the second well region. The first electrode is electrically connected to the first well region. The second electrode is electrically connected to the second well region. One of the current paths is formed on the first electrode, the first well region, the substrate, the second well region to the second electrode, and the current path passes through the plurality of PN junctions to form an equivalent circuit in which a plurality of equivalent capacitors are connected in series.

In an embodiment of the invention, the spacing is between 1 um and 10 um.

In an embodiment of the invention, the first electrode is at least partially located in the first well In the district.

In an embodiment of the invention, the first electrode is located outside of the first well region.

In an embodiment of the invention, the first well region and the second well region comprise a first conductive material, the substrate comprises a second conductive material, and the first well region, the second well region and the substrate form a plurality of PNs Junction.

In an embodiment of the invention, the first well region and the second well region have the same conductivity type.

In an embodiment of the invention, the conductivity type of the first well region is different from the conductivity type of the second well region.

Another preferred embodiment of the present invention is also a diode element of a transient voltage suppressor. In this embodiment, the diode element includes a substrate having a first conductivity type, a deep well region having a second conductivity type, a first well region, a second well region, and a first conductivity type. a first electrode and a second electrode having a second conductivity type. The substrate has a first surface. A deep well region is formed in the substrate adjacent to the first surface. A first well region is formed in the deep well region adjacent to the first surface. The second well region is formed in the deep well region adjacent to the first surface, wherein the first well region and the second well region have a pitch. The first electrode is electrically connected to the first well region. The second electrode is electrically connected to the second well region. a current path is formed in the first electrode, the first well region, the deep well region, the second well region to the second electrode, and the current path passes through the plurality of PN junctions to form an equivalent circuit of the plurality of equivalent capacitors connected in series .

According to still another preferred embodiment of the present invention, a method of fabricating a diode element of a transient voltage suppressor circuit. In this embodiment, the manufacturing method includes: providing a substrate having a first conductivity type; forming a first well region and a second well region in the substrate, wherein the first The well region and the second well region have a spacing; a first electrode having a first conductivity type is formed in the substrate, and the first electrode is in conductive contact with the first well region; and a second conductivity type is formed in the substrate a second electrode, and the second electrode is in conductive contact with the second well region. The doping concentration of the first electrode and the second electrode is higher than the impurity concentration of the first well region and the second well region.

Compared with the prior art, the present invention separates the originally connected well regions by changing the structure of the diode elements connected in series with the Zener diode in the transient voltage suppressor. The specific effect of reducing the parasitic capacitance of the diode element without affecting its ability to protect against electrostatic discharge and surge is achieved. In addition, the present invention can also select different spacings according to different doping concentrations and process parameters, thereby determining the type of the diode component.

The advantages and spirit of the present invention will be further understood from the following detailed description of the invention.

ZD‧‧ unidirectional Zener diode

BZD‧‧‧Two-way Zener diode

D‧‧‧ diode components

UD, DD‧‧‧ low capacitance diode components

Sub‧‧‧substrate

EL1, EL2‧‧‧ electrodes

P+, N+‧‧‧ high concentration doping layer

P-, N-‧‧‧ low concentration doping layer

4A~4B, 5A~5B, 6, 7‧‧‧Low Capacitance Diode Components

DR, DR1~DR2‧‧‧ well area

DR3‧‧‧ Deep Well Area

d, d1~d2‧‧‧ spacing

8A~8B, 11, 12A~12B‧‧‧ Low capacitance multi-channel transient voltage suppressor

P, I, G‧‧‧ feet

IN‧‧‧Input current

OUT‧‧‧Output current

SF‧‧‧ surface

S10~S14‧‧‧Steps

1A-1B are schematic diagrams showing a conventional low-capacitance single-channel unidirectional transient voltage suppressor and a low-capacitance single-channel bidirectional transient voltage suppressor.

2A-2B are schematic diagrams showing a conventional low-capacitance multi-channel unidirectional transient voltage suppressor and a low-capacitance multi-channel bidirectional transient voltage suppressor.

3A-3B are respectively schematic diagrams showing two different layered structures of a conventional diode element having an N-type substrate, and equivalent capacitances in a current path in the diode element.

4A-4B illustrate a layered structure of a low capacitance diode element of a transient voltage suppressor according to an embodiment of the present invention, and a current path in the low capacitance diode element. Schematic diagram of the equivalent capacitance.

5A-5B are respectively a layered structure of a low capacitance diode element of a transient voltage suppressor according to another embodiment of the present invention, and a schematic diagram of an equivalent capacitance in a current path of the low capacitance diode element. .

6 is a schematic diagram showing a small spacing d1 between the well region DR1 and the well region DR2. When the transient voltage passes through the structure, d1 is turned on by the well region to form a breakdown diode (Punch-through Diode). )element.

FIG. 7 is a schematic diagram showing a large spacing d2 between the well region DR1 and the well region DR2. When the transient voltage passes through the structure, the well regions are not conductive even if they diffuse, forming a thyristor element.

8A-8B are circuit diagrams showing a low capacitance multi-channel unidirectional transient voltage suppressor and a low capacitance multi-channel bidirectional transient voltage suppressor according to the present invention.

9 is a schematic diagram showing the layered structure of the low capacitance multi-channel unidirectional transient voltage suppressor of FIG. 8A.

10A-10B illustrate the forward current path and the negative current path of the low capacitance multi-channel unidirectional transient voltage suppressor of FIG. 8, respectively.

FIG. 11 is a schematic diagram showing that the well region DR1 and the well region DR2 are electrically different.

FIG. 12A is a schematic diagram showing that the electrodes EL1 of a portion of the low capacitance diode element UD are electrically connected to each other in the well region DR1.

FIG. 12B is a schematic diagram showing that the electrodes EL1 in the low capacitance diode element UD are outside the well region DR1 and are electrically connected to each other.

FIG. 13 illustrates a transient voltage according to another preferred embodiment of the present invention. A flow chart of a method of fabricating a diode element of a suppressor circuit.

Reference will now be made in detail to the exemplary embodiments embodiments In addition, the same or similar elements or components are used in the drawings and the embodiments to represent the same or similar parts. In the embodiments described below, when an element is referred to as having a "doping concentration higher than" another element, it is compared to the concentration of the same conductive dopant.

Please refer to FIG. 4A to FIG. 4B . FIG. 4A to FIG. 4B are schematic diagrams showing two different layered structures of the low capacitance diode element of the transient voltage suppressor.

As shown in FIG. 4A, the diode element 4A includes a substrate sub having a first conductive material such as an N-type material, and well regions DR1 to DR2 having a second conductive material such as a P-type material as an input. The P-type heavily doped region of the electrode is, for example, EL1 and the N-type heavily doped region as an output electrode is, for example, EL2. The substrate sub has a surface SF. The well regions DR1 to DR2 are formed in the substrate sub and adjacent to the surface SF of the substrate sub. The input electrode EL1 is electrically connected to the well region DR1 and the output electrode EL2 is electrically connected to the well region DR2. The electrodes EL1 and EL2 are both adjacent to the surface SF of the substrate sub. The well region DR1 and the well region DR2 have a spacing d between them and are not electrically connected to each other. In practical applications, the distance d between the well region DR1 and the well region DR2 may be between 1 um and 10 um, but not limited thereto.

It should be noted that a current path is formed between the input electrode EL1, the well region DR1, the substrate sub, the well region DR2, and the output electrode EL2, and the current path passes through a plurality of PN junctions to form a plurality of equivalent capacitors connected in series. Equivalent Circuit.

In this embodiment, the current path sequentially passes through the well region DR1. a PN junction between the substrate sub, a PN junction between the substrate sub and the well DR2, and a PN junction between the well DR2 and the electrode EL2, and each PN junction has an equivalent capacitance, so that a An equivalent circuit with three equivalent capacitors in series.

In practical applications, the well regions DR1 and DR2 may be formed in the same process and may have the same conductive type. For example, the well regions DR1 and DR2 are both P-type or N-type. The doping concentration of the electrodes EL1 to EL2 is higher than the doping concentration of the well regions DR1 to DR2.

Similarly, as shown in FIG. 4B, the diode element 4B includes a substrate sub having a first conductive material such as an N-type material, and well regions DR1 to DR2 having a first conductive material such as an N-type material. The P-type deep well DR3, the P-type heavily doped region as the input electrode is, for example, EL1 and the N-type heavily doped region as the output electrode is, for example, EL2. The substrate sub has a surface SF. The deep well region DR3 is formed in the substrate sub and adjacent to the surface SF of the substrate sub. The N-type well region DR1 is formed in the deep well region DR3 and adjacent to the surface SF of the substrate sub. The well region DR2 is formed in the deep well region DR3 and adjacent to the surface SF of the substrate sub. The input electrode EL1 is electrically connected to the well region DR1 and the output electrode EL2 is electrically connected to the well region DR2. The electrodes EL1 and EL2 are both adjacent to the surface SF of the substrate sub. The well regions DR1 and DR2 have a spacing d between them and are not electrically connected to each other. In practical applications, the distance d between the well region DR1 and the well region DR2 may be between 1 um and 10 um, but not limited thereto.

It should be noted that a current path is formed between the electrode EL1, the well region DR1, the deep well region DR3, the well region DR2, and the electrode EL2, and the current path passes through the plurality of PN junctions to form a plurality of equivalent capacitors in series. Equivalent circuit.

In this embodiment, the current path sequentially passes through the PN junction between the electrode EL1 and the well region DR1, the PN junction between the well region DR1 and the deep well region DR3, and the deep well region DR3 and the well. The PN junction between the regions DR2, each PN junction has an equivalent capacitance, forming an equivalent circuit with three equivalent capacitors in series.

In practical applications, the well regions DR1 and DR2 may be formed in the same process and may have the same conductivity type. For example, the well regions DR1 and DR2 are both P-type or N-type. The doping concentrations of the electrodes EL1 and EL2 are higher than the doping concentrations of the well regions DR1 and DR2 and the deep well region DR3. In addition, the conductivity type of the deep well region DR3 is different from that of the substrate sub and the well regions DR1 to DR2, that is, when the conductivity types of the substrate sub and the well regions DR1 to DR2 are both N-type, the conduction of the deep well region DR3 The type should be P-type.

Please refer to FIG. 5A to FIG. 5B . FIG. 5A to FIG. 5B are schematic diagrams showing two different layered structures of another embodiment of the low capacitance diode element of the transient voltage suppressor.

In another practical application, the well regions DR1 and DR2 have different conductivity types. As shown in FIG. 5A, the diode element 5A includes a substrate sub having a second conductive material such as a P-type, having a first conductivity. The material is, for example, a deep well region of an N-type material, an N-type well region DR1, a P-type well region DR2, and a P-type heavily doped region as an input electrode, such as EL1 and an N-type as an output electrode. The heavily doped region is, for example, EL2. The substrate sub has a surface SF. The N-type well region DR1 is formed in the substrate sub and adjacent to the surface SF of the substrate sub. The P-type well region DR2 is formed in the substrate sub and adjacent to the surface SF of the substrate sub. The input electrode EL1 is electrically connected to the N-type well region DR1 and the output electrode EL2 is electrically connected to the P-type well region DR2. The electrodes EL1 and EL2 are both adjacent to the surface SF of the substrate sub. The N-type well region DR1 and the P-type well region DR2 have a spacing d between them and are not electrically connected to each other. In practical applications, the distance d between the N-type well region DR1 and the P-type well region DR2 may be between 1 um and 10 um, but not limited thereto.

It should be noted that the input electrode EL1, the well region DR1, the substrate sub, and the well region A current path is formed between the DR2 and the output electrode EL2, and the current path passes through a plurality of PN junctions to form an equivalent circuit in which a plurality of equivalent capacitors are connected in series.

In this embodiment, the current path sequentially passes between the PN junction between the input electrode EL1 and the well region DR1, the PN junction between the deep well region DR3 and the well region DR2, and between the well region DR2 and the output electrode EL2. The PN junction, each PN junction has an equivalent capacitance, forming an equivalent circuit with three equivalent capacitors in series.

Similarly, as shown in FIG. 5B, the diode element 5B includes a substrate sub having a second conductive material such as a P-type material, and well regions DR1, P- having a first conductive material such as an N-type material. The type well region DR2, the P-type heavily doped region as the input electrode is, for example, EL1 and the N-type heavily doped region as the output electrode is, for example, EL2. The P-type substrate sub has a surface SF. The well regions DR1 to DR2 are formed in the substrate sub and adjacent to the surface SF. The input electrode EL1 is electrically connected to the well region DR1 and the output electrode EL2 is electrically connected to the well region DR2. The electrodes EL1 and EL2 are both adjacent to the surface SF of the substrate sub. The well regions DR1 and DR2 have a spacing d between them and are not electrically connected to each other. In practical applications, the distance d between the well region DR1 and the well region DR2 may be between 1 um and 10 um, but not limited thereto.

It should be noted that, according to different doping concentrations and process parameters, the present invention can also change the distance d between the well regions DR1 and DR2, thereby determining that when the transient voltage passes through the diode component, the equivalent is different. The semiconductor component, such as a Punch-through Diode component or a Thyristor component, is not limited thereto.

For example, as shown in FIG. 6, assuming a small spacing d1 (eg, 1 um) between the well regions DR1 and DR2, when a transient voltage passes through the component 6, the well regions DR1 and DR2 will diffuse outward. The spacing d1 is made smaller, and finally the well regions DR1 and DR2 are electrically connected to each other. The element 6 forms a breakdown diode element; as shown in FIG. 7, assuming a large spacing d2 (for example, 10 um) between the well regions DR1 and DR2, when the transient voltage passes through the element 7, the well regions DR1 and DR2 are It will spread out to make the spacing d2 smaller, but because the spacing d2 is larger, the well regions DR1 and DR2 cannot be electrically connected to each other, and the element 7 forms a thyristor element similar to a controlled rectifier (SCR), which is only an example. But not limited to this.

Next, please refer to FIG. 8A to FIG. 8B . FIG. 8A to FIG. 8B are respectively schematic diagrams showing the circuit of the low-capacitance multi-channel unidirectional transient voltage suppressor and the low-capacitance multi-channel bidirectional transient voltage suppressor according to the present invention.

As shown in FIG. 8A, the low capacitance multi-channel unidirectional transient voltage suppressor 8A includes a unidirectional Zener diode ZD and low capacitance diode elements UD and DD connected in series with each other. The two ends of the unidirectional Zener diode ZD are respectively coupled to the pin P and the pin G; the two ends of the low capacitance diode element UD are respectively coupled to the pin P and the low capacitance diode element DD The two ends of the low-capacitance diode element DD are respectively coupled to the low-capacitance diode element UD and the pin G; the pin I is coupled between the low-capacitance diode elements UD and DD.

As shown in FIG. 8B, the low capacitance multi-channel bidirectional transient voltage suppressor 8B includes bidirectional Zener diodes BZD and low capacitance diode elements UD and DD connected in series with each other. The two ends of the bidirectional Zener diode BZD are respectively coupled to the pin P and the pin G; the two ends of the low capacitance diode element UD are respectively coupled to the pin P and the low capacitance diode element DD; The two ends of the low-capacitance diode element DD are respectively coupled to the low-capacitance diode element UD and the pin G; the pin I is coupled between the low-capacitance diode elements UD and DD.

Next, the layered structure of the low capacitance multi-channel unidirectional transient voltage suppressor 8A of FIG. 8A will be described in detail through FIG. 9 as an example.

As shown in FIG. 9, the unidirectional Zener diode ZD, the low capacitance diode elements UD and DD are all formed in the N-type substrate sub. The pin G is coupled to the one-way Zener diode ZD and the low-capacitance diode element DD, respectively; the pin I is coupled to the low-capacitance diode elements UD and DD, respectively; the pin P is coupled to the low capacitance respectively The diode element UD and the one-way Zener diode ZD.

In this embodiment, the unidirectional Zener diode ZD includes a well region DR and electrodes EL1 to EL3 formed in the well region DR, wherein the electrodes EL2 and EL3 are electrically connected to each other and spaced apart from the electrode EL1.

The low capacitance diode element UD includes well regions DR1 and DR2 spaced apart from each other and electrodes EL1 and EL2 electrically connected to the well regions DR1 and DR2, respectively, wherein the electrode EL2 and the well region DR2 are electrically different, and the well region There is a distance d1 between DR1 and DR2.

The low capacitance diode element DD includes deep well regions DR3, well regions DR1 and DR2 formed in the deep well region DR3 and spaced apart from each other, and electrodes EL1 and EL2 electrically connected to the well regions DR1 and DR2, respectively, wherein the wells The region DR1 and the deep well region DR3 electrically different well region DR2 are electrically different from the deep well region DR3. The electrode EL1 is electrically different from the well region DR1, and has a pitch d2 between the well regions DR1 and DR2.

It can be seen from FIG. 9 that the pins G are respectively coupled to the electrodes EL2 and EL3 electrically connected to each other in the one-way Zener diode ZD and the electrodes EL1 in the low capacitance diode element DD; the pins I are respectively coupled The electrode EL1 in the low capacitance diode element UD and the electrode EL2 in the low capacitance diode element DD; the pin P is respectively coupled to the electrode EL2 and the one-way Zener diode in the low capacitance diode element UD Electrode EL1 in body ZD.

Next, the forward current path and the negative current path of the low capacitance multi-channel unidirectional transient voltage suppressor 8A of FIG. 9 will be described with reference to FIGS. 10A to 10B, respectively.

As shown in FIG. 9 and FIG. 10A, for the low capacitance multi-channel unidirectional transient voltage suppressor 8A, the forward current path refers to the input current IN through the pin I into the low capacitance multi-channel unidirectional transient voltage suppressor. 8A, and finally, the output current OUT is output through the pin G. When the input current IN enters the low-capacitance diode element UD from the pin I, it sequentially flows through the electrode EL1 in the low-capacitance diode element UD, the well region DR1, the N-type substrate sub, the well region DR2, and the electrode EL2. After flowing into the one-way Zener diode ZD, it then flows through the electrode EL1, the well region DR and the electrode EL3 in the one-way Zener diode ZD, and then flows to the pin G, and the output current is output by the pin G. OUT is output. That is, the forward current path of the low-capacitance multi-channel unidirectional transient voltage suppressor 8A in this embodiment is an electrode EL1 of the low-capacitance diode element UD as an electric input terminal and a one-way Zener diode The electrode EL3 of the body ZD serves as an electrical output, but is not limited thereto.

As shown in FIG. 9 and FIG. 10B, for the low-capacitance multi-channel unidirectional transient voltage suppressor 8A, the negative current path means that the input current IN passes through the pin G and enters the low-capacitance multi-channel unidirectional transient voltage suppressor. 8A, and finally the output current OUT is output through the pin I. When the input current IN enters the low-capacitance diode element DD from the pin G, it will sequentially flow through the electrode EL1 in the low-capacitance diode element DD, the well region DR1, the deep well region DR3, the well region DR2, and the electrode EL2. It flows to pin I, and the output current OUT is output by pin 1. That is to say, the negative current path of the low capacitance multi-channel unidirectional transient voltage suppressor 8A in this embodiment is the electrode EL1 of the low capacitance diode element DD as the electric input terminal and the low capacitance diode element. The electrode EL2 of the DD is used as an electrical output, but is not limited thereto.

It should be noted that, in addition to the embodiment in which the well regions DR1 and DR2 in the low-capacitance diode device DD shown in FIG. 9 are electrically identical, FIG. 11 illustrates the low-capacitance multi-channel transient voltage suppressor. The well regions DR1 and DR2 of the low-capacitance diode element DD of 11 are electrically different Example. That is, the well regions DR1 and DR2 in the low capacitance diode device of the transient voltage suppressor of the present invention have a pitch therebetween and the electrical properties of the two may be the same or different from each other, and are not particularly limited.

In addition, in addition to the embodiment in which the electrode EL1 in the low capacitance diode element UD is formed in the well region DR1, FIG. 12A illustrates the low capacitance multi-channel transient voltage suppressor 12A. The low-capacitance diode element UD has only a part of the electrodes EL1 located in the well region DR1 and electrically connected to each other, and FIG. 12B shows the low-capacitance diode in the low-capacitance multi-channel transient voltage suppressor 12B. The electrode EL1 of the element UD is located outside the well region DR1 and is electrically connected to each other. That is, the electrode EL1 and the well region DR1 (or the electrode EL2 and the well region DR2) of the low capacitance diode element in the transient voltage suppressor of the present invention can be electrically connected to each other as long as they are electrically conductive to each other. The pattern of the connection may be that the electrode EL1 is formed in the well region DR1 (or the electrode EL2 is formed in the well region DR2), a portion of the electrode EL1 is located in the well region DR1, and a portion of the electrode EL1 is located outside the well region DR1 (or a portion of the electrode) EL2 is located in the well region DR2 and part of the electrode EL2 is located outside the well region DR2), or the electrode EL1 is located outside the well region DR1 and is electrically connected to each other (or the electrode EL2 is outside the well region DR2 and is electrically connected to each other), and is not specified The limit.

Another preferred embodiment of the present invention is a method of fabricating a diode element of a transient voltage suppressor circuit. As shown in FIG. 13, first, in step S10, the manufacturing method provides a substrate; then, in step S12, the manufacturing method forms a first well region and a second well region in the substrate, and the first well The zone has a spacing from the second well zone.

In practical applications, the distance between the first well region and the second well region is preferably between 1 um and 10 um, but not limited thereto. In addition, the first well region and the second well region may be formed in the same process and have the same conductivity type, or the first well region and the second well region are respectively in different processes. Formed and have different conductivity types, and there is no particular limitation.

Then, in step S14, the manufacturing method respectively forms a first electrode having a first conductivity type and a second electrode having a second conductivity type in the substrate, such that the first electrode is in conductive contact with the first well region and the second The electrode is in conductive contact with the second well region. It should be noted that the doping concentration of the first electrode and the second electrode may be higher than the impurity concentration of the first well region and the second well region.

In an embodiment, the step S10 and the step S12 of the manufacturing method may further include: forming a deep well region in the substrate, and forming the first well region and the second well region in the deep well region, wherein the deep The conductivity type of the well region is different from the substrate, the first well region, and the second well region.

Compared with the prior art, the present invention separates the originally connected well regions by changing the structure of the diode elements connected in series with the Zener diodes in the transient voltage suppressor, thereby reducing the two. The equivalent capacitance of the polar body component does not affect its ability to protect against electrostatic discharge and surge. In addition, the present invention can also set different pitches according to different doping concentrations and process parameters, thereby determining the type of the low capacitance diode element.

The features and spirit of the present invention will be more apparent from the detailed description of the preferred embodiments. On the contrary, the intention is to cover various modifications and equivalents within the scope of the invention as claimed.

4A‧‧‧ diode components

Sub‧‧‧substrate

P+, N+‧‧‧ high concentration doping layer

P-, N-‧‧‧ low concentration doping layer

DR1~DR2‧‧‧ Well Area

EL1~EL2‧‧‧electrode

D‧‧‧ spacing

SF‧‧‧ surface

Claims (18)

A diode component of a transient voltage suppressor, comprising: a substrate having a first surface; a first well region formed in the substrate adjacent to the first surface; a second well region formed in the In the substrate and adjacent to the first surface, wherein the first well region and the second well region have a spacing; a first electrode electrically connected to the first well region; and a second electrode electrically connected a second well region, wherein a current path is formed in the first electrode, the first well region, the substrate, the second well region to the second electrode, and the current path is formed by a plurality of PN junctions An equivalent circuit in which an equivalent capacitor is connected in series. The diode element of claim 1, wherein the spacing is between 1 um and 10 um. The diode element of claim 1, wherein the first electrode is at least partially located in the first well region. The diode element of claim 1, wherein the first electrode is located outside the first well region. The diode component of claim 1, wherein the first well region and the second well region comprise a first conductive material, the substrate comprises a second conductive material, the first well region The second well region and the substrate form a plurality of PN junctions. The diode element of claim 1, wherein the first well region and the second well region have the same conductivity type. The diode element of claim 1, wherein the conductivity type of the first well region is different from the conductivity type of the second well region. A diode component of a transient voltage suppressor, comprising: a substrate having a first conductivity type having a first surface; and a deep well region having a second conductivity type formed in the substrate adjacent to the first a first well region formed in the deep well region adjacent to the first surface; a second well region formed in the deep well region adjacent to the first surface, wherein the first well region and the first well region The second well interval has a pitch; a first electrode having a first conductivity type electrically connected to the first well region; and a second electrode having a second conductivity type electrically connected to the second well region, wherein a current path is formed in the first electrode, the first well region, the deep well region, the second well region to the second electrode, and the current path passes through a plurality of PN junctions to form a plurality of equivalent capacitors in series An equivalent circuit. The diode element of claim 8 wherein the spacing is between 1 um and 10 um. The diode element of claim 8 wherein the first electrode is at least partially located in the first well region. The diode element of claim 8, wherein the first electrode is located outside the first well region. The diode element of claim 8, wherein the second well region and the first well region have the same conductivity type. The diode element according to claim 8, wherein the conductivity type of the second well region is Different from the conductivity type of the first well region. A method for fabricating a diode element of a transient voltage suppressor circuit includes: providing a substrate having a first conductivity type; forming a first well region and a second well region in the substrate, wherein the first well The region has a spacing from the second well region; a first electrode having a first conductivity type is formed in the substrate, and the first electrode is in conductive contact with the first well region; and the first electrode is formed in the substrate a second electrode of the second conductivity type, wherein the second electrode is in conductive contact with the second well region, wherein a doping concentration of the first electrode and the second electrode is higher than the first well region and the second well Doping concentration of the zone. The manufacturing method according to claim 14, wherein the pitch is between 1 um and 10 um. The manufacturing method according to claim 14, wherein the first well region and the second well region are formed in the same process and have the same conductivity type. The manufacturing method of claim 14, wherein the first well region and the second well region are formed in different processes and have different conductivity types. The manufacturing method of claim 14, further comprising: forming a deep well having a second conductivity type in the substrate, and then forming the first well region and the second well region; In the deep well zone.