TWI582255B - Dielectric sputtering target for optical storage media and dielectric layer for the same - Google Patents

Description

Dielectric sputtering target and dielectric layer for optical storage media

The present invention relates to a dielectric sputter target and a dielectric layer for an optical storage medium.

Optical storage media has been widely used to store high-capacity data or high-definition audio and video files because of its large amount of data.

In the case of a phase change optical storage medium, a common layered structure includes a substrate, a reflective layer, a first dielectric layer, a recording layer, a second dielectric layer, and a protective layer, which are transmitted through the laser light. The protective layer and the dielectric layer heat the substrate and heat up the phase change to complete the data recording.

In order to realize the phase change of the recording layer, in addition to the recording layer, the first dielectric layer and the second dielectric layer on both sides of the recording layer are also rapidly heated and cooled, and the laser light is transmitted through the second medium. The electrical layer causes phase changes in the recording layer. Therefore, the first dielectric layer and the second dielectric layer must have a low extinction coefficient, a high refractive index, and good thermal stability.

At present, the main dielectric layer material in the optical storage medium is zinc sulfide-cerium oxide (ZnS-SiO ₂ ), mainly because the dielectric layer composed of ZnS-SiO _{2 has} good light transmittance and the extinction coefficient is small. In addition, it can reduce the energy loss, promote the absorption of the laser by the recording layer, and has a higher refractive index, which can achieve the function of protecting the recording layer. Due to the high resistivity of the ZnS-SiO ₂ target, only the dielectric layer can be formed by radio frequency (RF) sputtering, but it cannot pass through direct current (DC), but the RF sputtering is not only the machine. The purchase is more expensive, and has the disadvantages of low coating efficiency, high energy consumption, slow film formation speed and easy generation of dust.

To this end, Taiwan Patent Publication No. I301157 discloses a sputtering target for forming a first dielectric layer or a second dielectric layer, which comprises a compound containing zinc oxide (ZnO) as a main component and zinc sulfide. (ZnS), the compound containing zinc oxide as the main component satisfies ABO _(KaX+KbY)/2 (ZnO) _m , 0<X<2, Y=2-X, 1≦m (A and B are respectively The element above the valence of 3, the valence is Ka, Kb, respectively, the sputtering target has a lower volume resistivity, and the first dielectric layer and the second dielectric can be formed by DC sputtering. The layers and the first dielectric layer and the second dielectric layer have suitable optical properties and thermal stability.

However, since zinc oxide is relatively sensitive to light and moisture, it is easy to affect the environmental weather resistance of the dielectric layer. Therefore, when the sputtering target is applied to the first dielectric layer and the second dielectric layer, The weather resistance of the first dielectric layer and the second dielectric layer is poor, thereby affecting the characteristics of the first dielectric layer and the second dielectric layer, thereby affecting the recording function of the recording layer of the optical storage medium, so that The lifetime of optical storage media is limited.

In addition, since the sputtering target contains zinc sulfide, when it is applied to form the first dielectric layer and the second dielectric layer, there is a problem that sulfur atoms contaminate the recording layer. In order to avoid this problem, the technician must An interface film is disposed between the first dielectric layer and the second dielectric layer and the recording layer to protect the recording layer, so that additional process steps and costs are required.

In view of the above disadvantages of the prior art, the object of the present invention is to design a dielectric sputtering target and a dielectric layer for an optical storage medium, which are better in addition to having appropriate optical characteristics and thermal stability. Weather resistance, it can help improve the recording quality and service life of optical storage media; without the need for additional interface film, it can save process steps and reduce costs.

In order to achieve the foregoing object, the technical means adopted by the present invention is to provide a dielectric sputtering target for an optical storage medium which is composed of 60 to 80 atomic percent of zinc sulfide (ZnS) and 20 to 40 atoms. A percentage of the oxidized metal composition, the main component of which is indium trioxide (In ₂ O ₃ ).

The dielectric sputtering target for an optical storage medium of the present invention is composed of a zinc sulfide and an oxidized metal composition containing indium trioxide as a main component, and the dielectric sputtering target is used as the target When the material of the dielectric layer of the optical storage medium is used, the dielectric layer for the optical storage medium can have appropriate optical characteristics and thermal stability, and also has good weather resistance, thereby improving the recording quality of the optical storage medium. And service life.

On the other hand, the dielectric sputter target for an optical storage medium of the present invention can have a relative density of more than 99%, and a dielectric layer having a high degree of uniformity can be obtained.

In a further aspect, the dielectric sputtering target for an optical storage medium of the present invention has a bulk resistivity of less than 1×10 ⁻¹ ohm-cm (Ω-cm), which can be applied to equipment with low cost and coating. DC sputtering process with high efficiency, energy saving, fast film formation and low dust generation, which can reduce process cost and shorten coating time.

Preferably, the oxidized metal composition further comprises zinc oxide (ZnO) and tin dioxide (SnO ₂ ), and the oxidized metal composition comprises: the content of indium is greater than the content of zinc, and the content of indium is greater than the content of tin. More preferably, the oxidized metal composition comprises: based on the total atomic content of indium, zinc and tin, the indium content is 60 to 80 atomic percent, the zinc content is 10 to 25 atomic percent, and the tin content is 1 Up to 20 atomic percent, and the zinc content is greater than the tin content.

Preferably, the dielectric sputtering target for an optical storage medium of the present invention comprises a base phase and a conductive phase, the base phase is composed of zinc sulfide, and the conductive phase is composed of an oxidized metal composition. The average grain size of the base phase is greater than the average grain size of the conductive phase; more preferably, the ratio of the grain size of the base phase to the grain size of the conductive phase is from 3 to 11.

Preferably, the dielectric sputter target for an optical storage medium of the present invention is produced using a powder metallurgy process or a ceramic process.

In order to achieve the foregoing object, the present invention further provides a dielectric layer for an optical storage medium comprising 60 to 80 atomic percent of zinc sulfide (ZnS) and 20 to 40 atomic percent of an oxidized metal composition. The main component of the oxidized metal composition is indium trioxide (In ₂ O ₃ ).

The dielectric layer for an optical storage medium of the present invention is composed of the zinc sulfide and the oxidized metal composition, and the oxidized metal composition is mainly composed of indium trioxide, and the present invention is used for light. The dielectric layer of the storage medium has good optical properties and thermal stability, and also has It has good weather resistance, which improves the recording quality and service life of optical storage media.

On the other hand, since the oxidized metal composition is mainly composed of indium trioxide, the indium and sulfur of the dielectric layer for the optical storage medium can react with each other to form a compound of sulfur and indium, thereby preventing sulfur diffusion. The occurrence of an adverse effect on the recording layer to the recording layer further increases the service life of the optical recording medium, and does not require an additional use of the interface film, thereby saving process steps and reducing costs.

Preferably, the oxidized metal composition further comprises zinc oxide (ZnO) and tin dioxide (SnO ₂ ), and the oxidized metal composition comprises: the content of indium is greater than the content of zinc, and the content of indium is greater than the content of tin. More preferably, the oxidized metal composition comprises: based on the total atomic content of indium, zinc and tin, the indium content is 60 to 80 atomic percent, the zinc content is 10 to 25 atomic percent, and the tin content is 1 Up to 20 atomic percent, and the zinc content is greater than the tin content.

Accordingly, since the oxidized metal composition comprises: the content of indium is 60 atomic percent or more based on the total atomic content of indium, zinc, and tin, and the indium and sulfur of the dielectric layer for the optical storage medium are formed. The probability of indium sulfide phase is greatly increased, and it is possible to avoid the situation where sulfur diffuses to the recording layer and adversely affects the recording layer, and prolongs the service life of the optical recording medium, saves the process steps, and reduces the cost.

Further, the indium sulfide phase is composed of a compound of sulfur and indium, such as: indium sulfide tetrasulfide (In ₅ S ₄ ), indium trisulfide (In ₂ S ₃ ) or indium heptasulfide (In ₆ S ₇ ), but not limited to this.

Preferably, the refractive index of the dielectric layer of the optical storage medium (refractive index, n) is between 2.00 and 3.00. More preferably, the dielectric layer of the optical storage medium has a refractive index (n) between 2.05 and 2.60.

Preferably, the dielectric layer of the optical storage medium has an extinction coefficient (k) of between 0 and 0.1.

Preferably, the dielectric layer of the optical storage medium is obtained by sputtering the aforementioned dielectric sputtering target.

In summary, the dielectric sputtering target and the dielectric layer for an optical storage medium of the present invention contain the zinc sulfide and the oxidized metal composition, since the oxidized metal composition is made of indium trioxide. The main component is such that the dielectric layer made of the film has good optical properties and thermal stability, and has good weather resistance, thereby improving the recording quality and service life of the optical storage medium.

10‧‧‧Base phase

10A‧‧‧Base phase

20‧‧‧ Conductive phase

20B‧‧‧ Conductive phase

1 is a scanning electron micrograph of a dielectric sputter target of Example 1.

2 is a scanning electron micrograph of a dielectric sputter target of Example 2.

3 is a scanning electron micrograph of a dielectric sputter target of Example 3.

4 is a scanning electron micrograph of a dielectric sputter target of Example 4.

5 is a scanning electron micrograph of a dielectric sputter target of Example 5.

6 is a scanning electron microscope image of a dielectric sputter target of Comparative Example 1. Figure.

7 is a X-ray diffraction spectrum of the dielectric sputter targets of Examples 1 to 3 and Comparative Example 1.

Figure 8 is a graph showing the relationship between the instantaneous reflectance versus temperature for the dielectric layer of Example 6 at different heating rates.

9 is an X-ray diffraction spectrum of the dielectric layer of Example 6 as-deposited and annealed.

The technical features and actual functions of the present invention can be understood in detail, and can be implemented in accordance with the contents of the specification, and the drawings and preferred embodiments are further described to illustrate the technical means used for the purpose of the present invention.

1. Making dielectric sputter targets for optical storage media

<Example 1>

The zinc sulfide and the metal oxide composition are uniformly mixed at an atomic ratio of 80:20, and the temperature is maintained at 950 to 1050 ° C under a pressure of about 400 bar for 8 hours to obtain a dielectric. Sputter target.

Wherein, the oxidized metal composition comprises indium trioxide, zinc oxide and tin dioxide, based on the total atomic content of indium, zinc and tin contained therein, wherein the content of indium is 76.5 atomic percent, and the content of zinc is 12.1 atomic percent, the tin content is 11.4 atomic percent.

Wherein, the particle size of the zinc sulfide is greater than the particle size of the metal oxide composition.

<Example 2>

This embodiment differs from Example 1 in that zinc sulfide The atomic ratio to the oxidized metal composition is 70:30.

<Example 3>

This embodiment differs from Example 1 in that the atomic ratio of zinc sulfide to the metal oxide composition is 60:40.

<Example 4>

This embodiment differs from Embodiment 1 in that the oxidized metal composition comprises: the content of indium is 62.1 atomic percent, the content of zinc is 24.9 atomic percent, and the content of tin is based on the total atomic content of indium, zinc and tin. It is 13 atomic percent.

<Example 5>

This embodiment differs from Example 4 in that the atomic ratio of the zinc sulfide to the metal oxide composition is 70:30.

<Comparative Example 1>

This comparative example differs from Example 1 in that the atomic ratio of the zinc sulfide to the metal oxide composition is 85:15.

<Comparative Example 2>

The comparative example is different from the first embodiment in that the atomic ratio of the zinc sulfide to the metal oxide composition is 70:30, and the metal oxide composition is mainly composed of zinc oxide, and the metal oxide composition comprises: The total atomic content of indium, zinc and tin is used as a reference, the content of indium is 2.7 atom%, the content of zinc is 95 atomic percent, and the content of tin is 2.3 atomic percent.

2. Characterization of dielectric sputter targets for optical storage media

<Dielectric Sputtering Target Analysis Method>

Relative Density: The density of the dielectric sputter target was first measured, and then the relative density of the dielectric sputter target was calculated based on the density of water at 27 °C.

Among them, the density of the dielectric sputter target is measured by the Archimedes method and the size method.

Volume resistivity: measured with a four-point probe (model: RT-70).

Microstructure: Observation was carried out using a scanning electron microscope (label: Hitachi, model: 3400N).

Crystal phase identification: analysis was performed using an x-ray diffractometer (label: Rigaku, model: Ultima IV).

Component Analysis: Energy Dispersive Spectrometer (EDS)

<Dielectric Sputtering Target Analysis Results>

Table 1 shows the relative density and volume resistivity of the dielectric sputter targets of Examples 1 to 5 by the Archimedes method. Table 2 shows the composition ratios of indium, zinc, and tin contained in the oxidized metal composition of the dielectric sputter targets of Examples 1 to 5 and Comparative Examples 1 and 2. Table 3 shows the relative density and volume resistivity of the dielectric sputter target of Comparative Examples 1 and 2 by the Archimedes method. Table 4 shows the composition ratios of the base phase and the conductive phase of the dielectric sputter targets of Examples 1 to 5 and Comparative Example 1. 1 to 6 are scanning electron micrograph images of the dielectric sputter targets of Examples 1 to 5 and Comparative Example 1, respectively. 7 is an X-ray diffraction spectrum of a dielectric sputter target of Comparative Example 1 and Examples 1 to 3. In the graph, the curve in Fig. 7 is the X-ray diffraction spectrum of Comparative Example 1 and Examples 1 to 3 in order from bottom to top. And the relative density measured by the relative density and the size method of the dielectric sputter target of Examples 1 to 5 and Comparative Example 1 by the Archimedes method was 99% or more, and the relative value of Comparative Example 2 was compared. The density is about 93.5%, so the density measured by the size method is not listed.

It can be seen from Table 1 that the dielectric sputtering targets of Examples 1 to 5 have a relative density of more than 99% and a high relative density. Therefore, the dielectric sputtering targets of Examples 1 to 5 can be used. A dielectric layer having a high thickness uniformity is formed by sputtering. Further, referring to FIGS. 1 to 5, it can be seen that there are no obvious voids in the microstructure of the dielectric sputter target of Examples 1 to 5, It is more reliable to confirm that the dielectric layer of the dielectric sputter target of Examples 1 to 5 is sputter-plated to have a high degree of thickness uniformity.

As can be seen from Table 1, the dielectric resistivity of the dielectric sputter targets of Examples 1 to 5 can be less than 1 x 10 ^-1 ohm-cm, i.e., 9.99 x 10 ^-2 or less, showing the dielectric spatter of Examples 1 to 5. The plating targets all have the characteristics of low bulk resistivity, and the embodiments 1 to 5 can be applied to DC sputtering in which the equipment is low in cost, high in coating efficiency, energy saving, film forming speed is fast, and dust is not easily generated, thereby saving Cost and coating time.

Further comparison of Examples 1 to 3, as shown in Tables 1 and 2, shows that the volume resistivity of the dielectric sputter target can be lowered as the content of the oxidized metal composition is increased. As shown in Tables 1 and 2, the composition ratio and the bulk resistance values of Examples 4 and 5 also show that the volume resistivity of the dielectric sputter target decreases as the content of the oxidized metal composition increases.

Further comparing Example 1 with Example 4, as shown in Table 1 and Table 2, compared with Example 4, the oxidized metal composition of Example 1 contains a higher atomic percentage of indium, a lower atomic percentage. Zinc and a lower atomic percentage of tin, while Example 1 has a lower bulk resistivity, showing an increase in the indium content of the oxidized metal composition, which reduces the bulk resistivity of the dielectric sputter target; By comparing Example 2 with Example 5, the same conclusion as above can be obtained.

Further, Examples 1 to 5 and Comparative Examples 1 and 2 were compared; as shown in Tables 1 to 3, Comparative Example 1 had a relative density equivalent to that of Examples 1 to 5, but Comparative Example 1 had a high bulk resistivity. It is not suitable for DC sputtering processes at 1x10 ^-1 ohm-cm. Comparative Example 2, which contains an oxidized metal composition containing zinc oxide as a main component, has a volume resistivity of less than 1 x 10 ^-1 ohm-cm and is suitable for a DC plating process, but has a comparative embodiment 1 to 5. The lower relative density makes the thickness uniformity of the dielectric layer formed by Comparative Example 2 worse than that of the dielectric layers produced in Examples 1 to 5 and the weather resistance is poor.

1 to 5, the microstructure of the dielectric sputter target of Embodiments 1 to 5 includes a base phase 10 and a conductive phase 20, and is transmitted through an energy scattering spectrum analyzer for each embodiment. The base phase 10 and the conductive phase 20 were subjected to component analysis. The results are shown in Table 4. It is found that the base phase 10 of each embodiment is composed of zinc sulfide, and the conductive phase 20 is composed of a metal oxide composition. Each of the crystal grains of the conductive phase 20 is located around each of the crystal grains of the base phase 10, such that the dielectric sputter targets of Embodiments 1 to 5 are electrically conductive except for being transmitted through the substrate phase 10. In addition, it can also be conducted through the conductive phase 20. Therefore, it was confirmed that the bulk resistivity of the prepared dielectric sputtering target can be favored by the selection of the oxidized metal composition.

As shown in FIG. 6, the microstructure of Comparative Example 1 also includes A base phase 10A and a conductive phase 20B were subjected to composition analysis of the base phase 10A and the conductive phase 20B of each of the examples by an energy scattering spectrum analyzer. The results are shown in Table 4, and the base phase 10A was obtained by a vulcanization. Zinc is formed, and the conductive phase 20B is composed of a metal oxide composition, and each crystal grain of the conductive phase 20B is located around each of the crystal grains of the base phase 10A, and is in phase with the substrates of Embodiments 1 to 5. 10 and the composition and distribution of the conductive phase 20 are similar. However, as shown in Tables 1 to 3, the content of the oxidized metal composition of Comparative Example 1 is smaller than that of the oxidized metal compositions of Examples 1 to 5, and it is known. Since the content of the oxidized metal composition of Comparative Example 1 was low, Comparative Example 1 had similar microstructures and phase compositions as those of Examples 1 to 5, but could not have a volume resistivity applicable to a DC sputtering process. .

In addition, as shown in FIGS. 1 to 5, the average grain size of the conductive phase 20 of each embodiment is smaller than the average grain size of the substrate phase 10, and the grain size of the base phase 10 and the grain size of the conductive phase 20 are calculated. The ratio is between 3 and 11. Further, the average grain size of the base phase 20 The size ranges from 4.5 to 5.5 micrometers (μm) and the conductive phase 20 has an average grain size between 0.5 and 1.5 micrometers (μm).

Referring to FIG. 7 , in the X-ray diffraction spectrum of the dielectric sputter target of Comparative Example 1 and Examples 1 to 3, the dielectric sputter target of Comparative Example 1 and Examples 1 to 3 can be known. The main crystal phase composition of the material is zinc sulfide monosulfide having a cubic structure and indium trioxide having a cubic structure.

3. Making a dielectric layer for optical storage media

<Example 6>

First, a germanium (Si) substrate is provided, and then the dielectric sputtering target of the first embodiment is sputtered onto the germanium substrate by a sputtering machine (brand: FULINTEC, model: FU09-0425). A dielectric layer having a thickness of 100 nanometers (nm) is formed on the germanium substrate.

<Examples 7 and 8>

The dielectric sputter targets of Examples 2 and 3 were respectively sputtered onto a substrate by the same method as in Example 6, to form a dielectric layer having a thickness of 100 nm (nm). On the substrate.

<Examples 9, 10 and 11>

The dielectric sputter targets of Examples 1, 2 and 3 were respectively sputtered onto a substrate by the same method as in Example 6, to form a dielectric layer having a thickness of 150 nm (nm). A stack of substrates.

<Examples 12, 13 and 14>

The dielectric sputter targets of Examples 1, 2 and 3 were respectively sputtered onto a substrate by the same method as in Example 6, and formed separately. A dielectric layer having a thickness of 200 nanometers (nm) is on a substrate.

<Comparative Example 3>

A dielectric sputtering target of Comparative Example 2 was sputtered onto a ruthenium substrate in the same manner as in Example 6 to form a dielectric layer having a thickness of 100 nm (nm) on the ruthenium substrate.

<Comparative Example 4>

A dielectric sputtering target containing zinc sulfide and cerium oxide was sputtered onto the ruthenium substrate in the same manner as in Example 6 to form a dielectric layer having a thickness of 100 nm. On the germanium substrate, the dielectric sputtering target comprises: a content of zinc sulfide of 50 atomic percent based on the content of zinc sulfide and cerium oxide, and a content of cerium oxide of 50 atomic percent.

4. Characterization of the dielectric layer used in optical storage media

<Dielectric layer analysis method>

Film thickness, refractive index (n) and extinction coefficient (k): An n&k dielectric layer characteristic analyzer (brand: n&k Technology, Inc., model: n&k Analyzer 1280) was used.

Crystal phase identification: X-ray diffractimeter (label: Rigaku, model: Ultima IV) was used.

Thermal stability: Use an instant reflectance measurement device.

<Dielectric layer analysis results>

Table 5 shows the optical characteristics of the dielectric layers of Examples 6 to 14 and Comparative Examples 3 and 4 at different laser light wavelengths, wherein the dielectric layers of Examples 6 to 8 were confirmed by an n&k dielectric layer characteristic analyzer analysis. The thickness of each of the dielectric layers of Examples 9 to 11 is 150 nm and The dielectric layers of Examples 12 through 14 each have a thickness of 200 nanometers (nm).

As shown in Table 5, the refractive indices and extinctions of the dielectric layers of Examples 6 to 14 were measured when the dielectric layers of Examples 6 to 14 were analyzed with laser light of 450, 630 and 780 nm. The coefficients were in addition to the refractive index and the extinction coefficient of Comparative Examples 3 and 4. Among them, the refractive index and the extinction coefficient of Example 6 were superior to Comparative Examples 3 and 4, and exhibited excellent optical properties. Meanwhile, the dielectric layer of Example 6 was made of the dielectric target of Example 1, and the dielectric target of Example 1 was composed of 80 atomic percent of zinc sulfide and 20 atomic percent of oxidized metal. The composition shows that the dielectric layer of Example 6 only needs to contain 20 atomic percent of the metal oxide composition to achieve excellent optical properties, and has excellent optical properties at low raw material cost.

Figure 8 is a dielectric layer of Example 6 at a heating rate of 50 ° C / minute ( ° C / min), 100 ° C / minute ( ° C / min) and 120 ° C / per Instant reflectance versus temperature for a minute (°C/min); wherein the bottom-up curve is sequentially heated at a rate of 50 ° C / min, 100 ° C / min and 120 ° C / min. The relationship between instantaneous reflectivity and temperature under conditions.

9 is an X-ray diffraction spectrum of the dielectric layer of Example 6 as-deposited and annealed; wherein the relatively upper curve is the X-ray diffraction of the dielectric layer just deposited. The spectrum, the curve located below is the X-ray diffraction spectrum for annealing, and the bottom is the Joint Diffraction File (PDF) No. 42 of the joint committee of powder diffraction standard (JCPDS). -0792 X-ray diffraction spectrum, PDF No. 42-0792 is the X-ray diffraction spectrum of indium sulfide tetrasulfide (In ₅ S ₄ ), and the annealing rate is 100 ° C / min, the starting temperature is 50 ° C, the maximum temperature is 500 ° C, the termination temperature is 50 ° C.

It can be seen from Fig. 8 that the instantaneous reflectance versus temperature curve of the dielectric layer under different heating rates is relatively gentle at a temperature of 50 to 500 ° C without significant change; It can be seen from 9 that the dielectric layer exhibits a microcrystalline structure after annealing, and the overall structure of the dielectric layer is relatively stable, so that the dielectric layer can have good thermal stability.

In addition, as seen in FIG. 9, the crystalline phase structure of the dielectric layer has an indium sulfide phase composed of a compound of sulfur and indium, and the dielectric layer has an annealed crystal structure. Indium sulfide phase; this can avoid the situation where sulfur diffuses to the recording layer and adversely affects the recording layer, increases the service life of the optical recording medium, and eliminates the setting of the interface film. The process steps and costs are saved; further, as can be seen from FIG. 9, the indium sulfide phase of Example 6 is a pentadium indium tetrasulfide having a cubic structure.

The above-mentioned embodiments are merely examples for convenience of description, and the scope of the claims is intended to be limited to the above embodiments.

10‧‧‧Base phase

20‧‧‧ Conductive phase

Claims (11)

A dielectric sputtering target for an optical storage medium, which is composed of 60 to 80 atomic percent of zinc sulfide (ZnS) and 20 to 40 atomic percent of an oxidized metal composition, the main constituent of which is a metal oxide composition The composition is indium trioxide (In ₂ O ₃ ). The dielectric sputtering target for an optical storage medium according to claim 1, wherein the oxidized metal composition further comprises zinc oxide (ZnO) and tin dioxide (SnO ₂ ), and the oxidized metal composition comprises: The content of indium is greater than the content of zinc, and the content of indium is greater than the content of tin. The dielectric sputtering target for an optical storage medium according to claim 2, wherein the oxidized metal composition comprises: the content of indium is 60 to 80 atomic percent based on the total atomic weight of indium, zinc and tin; The zinc content is 10 to 25 atomic percent, the tin content is 1 to 20 atomic percent, and the zinc content is greater than the tin content. The dielectric sputtering target for an optical storage medium according to any one of claims 1 to 3, comprising a base phase and a conductive phase, a grain size of the base phase and a grain size of the conductive phase The ratio is 3 to 11. The dielectric sputter target for an optical storage medium according to any one of claims 1 to 3, which has a relative density of more than 99%. A dielectric layer for an optical storage medium comprising 60 to 80 atomic percent of zinc sulfide (ZnS) and 20 to 40 atomic percent of an oxidized metal composition, the main component of which is three Indium oxide (In ₂ O ₃ ). The dielectric layer for an optical storage medium according to claim 6, wherein the oxidized metal composition further comprises zinc oxide (ZnO) and tin dioxide (SnO ₂ ), and the oxidized metal composition comprises: an indium content. More than the content of zinc, the content of indium is greater than the content of tin. The dielectric layer for an optical storage medium according to claim 7, wherein the oxidized metal composition comprises: an indium content of 60 to 80 atomic percent based on the total atomic content of indium, zinc, and tin, and a zinc content. The content of tin is from 10 to 25 atom%, and the content of zinc is greater than the content of tin. The dielectric layer for an optical storage medium according to any one of claims 6 to 8, which has an indium sulfide phase. The dielectric layer for an optical storage medium according to any one of claims 6 to 8, which is a dielectric sputtering for an optical storage medium according to any one of claims 1 to 5. Made of target. A dielectric layer for an optical storage medium according to claim 10, which has an indium sulfide phase.