TWI580566B - A manufacturing method of an electronic device, and a method for manufacturing a glass laminate - Google Patents
A manufacturing method of an electronic device, and a method for manufacturing a glass laminate Download PDFInfo
- Publication number
- TWI580566B TWI580566B TW102101529A TW102101529A TWI580566B TW I580566 B TWI580566 B TW I580566B TW 102101529 A TW102101529 A TW 102101529A TW 102101529 A TW102101529 A TW 102101529A TW I580566 B TWI580566 B TW I580566B
- Authority
- TW
- Taiwan
- Prior art keywords
- resin layer
- glass substrate
- glass
- electronic device
- substrate
- Prior art date
Links
- 239000005340 laminated glass Substances 0.000 title claims description 93
- 238000000034 method Methods 0.000 title claims description 75
- 238000004519 manufacturing process Methods 0.000 title claims description 49
- 239000000758 substrate Substances 0.000 claims description 410
- 239000011521 glass Substances 0.000 claims description 301
- 229920005989 resin Polymers 0.000 claims description 293
- 239000011347 resin Substances 0.000 claims description 293
- 238000005498 polishing Methods 0.000 claims description 74
- YLQWCDOCJODRMT-UHFFFAOYSA-N fluoren-9-one Chemical group C1=CC=C2C(=O)C3=CC=CC=C3C2=C1 YLQWCDOCJODRMT-UHFFFAOYSA-N 0.000 claims description 50
- 239000000203 mixture Substances 0.000 claims description 32
- 239000000126 substance Substances 0.000 claims description 20
- -1 polysiloxane Polymers 0.000 claims description 18
- 238000000926 separation method Methods 0.000 claims description 15
- 229910052739 hydrogen Inorganic materials 0.000 claims description 10
- 239000001257 hydrogen Substances 0.000 claims description 10
- 238000010030 laminating Methods 0.000 claims description 9
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 8
- 125000003342 alkenyl group Chemical group 0.000 claims description 8
- 238000006243 chemical reaction Methods 0.000 claims description 8
- 238000000227 grinding Methods 0.000 claims description 8
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 7
- 229920001296 polysiloxane Polymers 0.000 claims description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- 238000009825 accumulation Methods 0.000 claims description 2
- 239000005337 ground glass Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 294
- 239000011342 resin composition Substances 0.000 description 20
- 239000011259 mixed solution Substances 0.000 description 17
- 238000000576 coating method Methods 0.000 description 16
- 239000011254 layer-forming composition Substances 0.000 description 16
- 238000001723 curing Methods 0.000 description 15
- 239000000463 material Substances 0.000 description 15
- 238000005530 etching Methods 0.000 description 13
- 239000011248 coating agent Substances 0.000 description 12
- 239000010408 film Substances 0.000 description 12
- 239000007788 liquid Substances 0.000 description 11
- 238000000206 photolithography Methods 0.000 description 11
- 239000002904 solvent Substances 0.000 description 11
- 238000004544 sputter deposition Methods 0.000 description 10
- 238000007259 addition reaction Methods 0.000 description 9
- 239000012298 atmosphere Substances 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 9
- 239000004973 liquid crystal related substance Substances 0.000 description 9
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 229910000420 cerium oxide Inorganic materials 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 6
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical group [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 5
- 239000003054 catalyst Substances 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000005401 electroluminescence Methods 0.000 description 5
- 238000003475 lamination Methods 0.000 description 5
- 229910052707 ruthenium Inorganic materials 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 239000006061 abrasive grain Substances 0.000 description 4
- 239000003431 cross linking reagent Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 150000002576 ketones Chemical class 0.000 description 4
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N o-biphenylenemethane Natural products C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 238000001029 thermal curing Methods 0.000 description 4
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- RJGDLRCDCYRQOQ-UHFFFAOYSA-N anthrone Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3CC2=C1 RJGDLRCDCYRQOQ-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000003749 cleanliness Effects 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 238000004132 cross linking Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000007607 die coating method Methods 0.000 description 3
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 3
- 239000005357 flat glass Substances 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- UCUUFSAXZMGPGH-UHFFFAOYSA-N penta-1,4-dien-3-one Chemical compound C=CC(=O)C=C UCUUFSAXZMGPGH-UHFFFAOYSA-N 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000003014 reinforcing effect Effects 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- 150000001340 alkali metals Chemical class 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 238000006482 condensation reaction Methods 0.000 description 2
- 239000007822 coupling agent Substances 0.000 description 2
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 230000009477 glass transition Effects 0.000 description 2
- 238000013007 heat curing Methods 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 230000002250 progressing effect Effects 0.000 description 2
- 239000002096 quantum dot Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- 238000005488 sandblasting Methods 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 239000013585 weight reducing agent Substances 0.000 description 2
- YJTKZCDBKVTVBY-UHFFFAOYSA-N 1,3-Diphenylbenzene Chemical group C1=CC=CC=C1C1=CC=CC(C=2C=CC=CC=2)=C1 YJTKZCDBKVTVBY-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 241000501754 Astronotus ocellatus Species 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 1
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- 229910003849 O-Si Inorganic materials 0.000 description 1
- 229910003872 O—Si Inorganic materials 0.000 description 1
- 238000006124 Pilkington process Methods 0.000 description 1
- 229910052774 Proactinium Inorganic materials 0.000 description 1
- 206010070834 Sensitisation Diseases 0.000 description 1
- 240000006394 Sorghum bicolor Species 0.000 description 1
- 235000011684 Sorghum saccharatum Nutrition 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 238000004873 anchoring Methods 0.000 description 1
- 239000005391 art glass Substances 0.000 description 1
- 238000007611 bar coating method Methods 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- HFACYLZERDEVSX-UHFFFAOYSA-N benzidine Chemical compound C1=CC(N)=CC=C1C1=CC=C(N)C=C1 HFACYLZERDEVSX-UHFFFAOYSA-N 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 229910021525 ceramic electrolyte Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005108 dry cleaning Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000001227 electron beam curing Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000010828 elution Methods 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000007756 gravure coating Methods 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 125000000687 hydroquinonyl group Chemical group C1(O)=C(C=C(O)C=C1)* 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 150000002642 lithium compounds Chemical class 0.000 description 1
- 229910001416 lithium ion Inorganic materials 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000006060 molten glass Substances 0.000 description 1
- WNDSQRGJJHSKCQ-UHFFFAOYSA-N naphthalene-1,5-dicarbonitrile Chemical compound C1=CC=C2C(C#N)=CC=CC2=C1C#N WNDSQRGJJHSKCQ-UHFFFAOYSA-N 0.000 description 1
- 229910000652 nickel hydride Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 239000013500 performance material Substances 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920005672 polyolefin resin Polymers 0.000 description 1
- 229920005749 polyurethane resin Polymers 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 230000008313 sensitization Effects 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
- B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
- B32B17/10—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
- B32B17/10005—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing
- B32B17/1055—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the resin layer, i.e. interlayer
- B32B17/10798—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the resin layer, i.e. interlayer containing silicone
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
- B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
- B32B17/10—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
- B32B17/10005—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing
- B32B17/10009—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the number, the constitution or treatment of glass sheets
- B32B17/10018—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the number, the constitution or treatment of glass sheets comprising only one glass sheet
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
- B32B7/04—Interconnection of layers
- B32B7/06—Interconnection of layers permitting easy separation
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
- C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
- C03C3/093—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium containing zinc or zirconium
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133302—Rigid substrates, e.g. inorganic substrates
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mathematical Physics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Organic Chemistry (AREA)
- Laminated Bodies (AREA)
- Liquid Crystal (AREA)
- Surface Treatment Of Glass (AREA)
- Electroluminescent Light Sources (AREA)
- Glass Compositions (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Photovoltaic Devices (AREA)
Description
本發明係關於一種電子裝置之製造方法及玻璃積層體之製造方法。 The present invention relates to a method of manufacturing an electronic device and a method of manufacturing a glass laminate.
近年來,太陽電池(PV,photovoltaic,光伏)、液晶面板(LCD,Liquid Crystal Display)、有機EL(Electro Luminescence,電致發光)面板(OLED,Organic Light Emitting Diode,有機發光二極體)等裝置(電子機器)之薄型化、輕量化不斷進展,且該等裝置所使用之玻璃基板之薄板化不斷進展。若因薄板化導致玻璃基板之強度不足,則於裝置之製造步驟中,玻璃基板之處理性降低。 In recent years, devices such as solar cells (PV, photovoltaic), liquid crystal panels (LCD), organic EL (Electro Luminescence) panels (OLED, Organic Light Emitting Diode) The thinner and lighter (electronic devices) are progressing, and the thinning of the glass substrates used in these devices is progressing. If the strength of the glass substrate is insufficient due to thinning, the glass substrate is rationally lowered in the manufacturing process of the device.
因此,自先前以來,廣泛採用於比最終厚度厚之玻璃基板上形成裝置用構件(例如薄膜電晶體)後,藉由化學蝕刻處理將玻璃基板薄板化的方法。然而,該方法中,例如於將1片玻璃基板之厚度自0.7mm薄板化至0.2mm或0.1mm之情形時,由於藉由蝕刻液蝕去原來之玻璃基板之材料之大部分,故就生產性或原材料之使用效率之觀點而言欠佳。 Therefore, a method of thinning a glass substrate by a chemical etching treatment after forming a device member (for example, a thin film transistor) on a glass substrate having a thicker final thickness has been widely used. However, in this method, for example, when the thickness of one glass substrate is thinned from 0.7 mm to 0.2 mm or 0.1 mm, since most of the material of the original glass substrate is etched by the etching liquid, the production is performed. The viewpoint of the efficiency of use of sex or raw materials is not good.
又,上述利用化學蝕刻之玻璃基板之薄板化方法中,有於玻璃基板表面存在細微之損傷之情況,並有因蝕刻處理而以損傷為起點形成細微之凹陷(蝕孔)而成為光學缺陷之情況。 Further, in the thinning method of the glass substrate by chemical etching, there is a case where there is a slight damage on the surface of the glass substrate, and a fine pit (etching hole) is formed as a starting point from the damage by the etching treatment to become an optical defect. Happening.
最近,為了應對上述課題,提出準備積層有薄板玻璃基板與加強板之積層體,於積層體之薄板玻璃基板上形成顯示裝置後,將加強 板自薄板玻璃基板分離之方法(例如參照專利文獻1)。加強板具有支持基板與固定於該支持基板上之樹脂層,樹脂層與薄板玻璃基板以可剝離之方式密接。積層體之樹脂層與薄板玻璃基板之界面剝離而自薄板玻璃基板分離的加強板可與新的薄板玻璃基板積層而以積層體之形式再利用。 Recently, in order to cope with the above problems, it has been proposed to laminate a thin-plate glass substrate and a reinforcing plate, and to form a display device on a thin-plate glass substrate of a laminate, and then strengthen it. A method of separating a plate from a thin glass substrate (for example, refer to Patent Document 1). The reinforcing plate has a supporting substrate and a resin layer fixed to the supporting substrate, and the resin layer and the thin glass substrate are detachably adhered. The reinforcing plate from which the interface between the resin layer of the laminate and the thin glass substrate is separated from the thin glass substrate can be laminated with a new thin glass substrate to be reused in the form of a laminate.
另一方面,已知如專利文獻2之段落[0084]所述,若玻璃之表面存在大於0.100μm之起伏,則難以進行形成於其表面之電路電極等之準確之圖案化,其結果,電路電極斷線、短路之機率上升,液晶顯示器等電子裝置之良率降低,並且難以保證其可靠性。 On the other hand, as described in paragraph [0084] of Patent Document 2, if the surface of the glass has an undulation of more than 0.100 μm, it is difficult to accurately pattern the circuit electrode or the like formed on the surface thereof, and as a result, the circuit The probability of electrode disconnection and short circuit increases, the yield of electronic devices such as liquid crystal displays decreases, and it is difficult to ensure reliability.
[專利文獻1]國際公開第07/018028號說明書 [Patent Document 1] International Publication No. 07/018028
[專利文獻2]日本專利特開第2009-13049號公報 [Patent Document 2] Japanese Patent Laid-Open Publication No. 2009-13049
本發明者等人對專利文獻1所記載之發明進行研究,結果發現於積層體之薄板玻璃基板上將顯示構件等電子裝置用構件形成為特定之圖案狀時,存在該圖案產生偏移、顯示面板之生產良率降低之情況。 When the inventors of the present invention have studied the invention described in Patent Document 1, it has been found that when a member for an electronic device such as a display member is formed into a specific pattern on a thin glass substrate of a laminate, the pattern is shifted and displayed. The production yield of the panel is reduced.
對其原因進行研究,結果如專利文獻2所記載,積層之薄板玻璃表面之起伏之類之表面凹凸成為如上所述生產良率降低之原因。 As a result of the investigation, as described in Patent Document 2, the surface unevenness such as the undulation of the surface of the laminated thin plate glass causes the production yield to decrease as described above.
因此,本發明者等人研磨專利文獻1所記載之積層體中之薄板玻璃基板之表面而製成平坦面,於其上進行電子裝置用構件等之形成。然而,若將形成有電子裝置用構件之薄板玻璃基板自積層體剝離,則剝離後之形成有電子裝置用構件之薄板玻璃基板之表面再次產生起伏。如上所述,此種表面之起伏會成為生產性之良率降低之原因。 Therefore, the inventors of the present invention polished the surface of the thin glass substrate in the laminate described in Patent Document 1 to form a flat surface, and formed a member for an electronic device or the like thereon. However, when the thin glass substrate on which the electronic device member is formed is peeled off from the laminate, the surface of the thin glass substrate on which the electronic device member is formed after peeling is again undulated. As described above, such surface undulations may be a cause of a decrease in productivity.
本發明係鑒於上述課題而完成者,其目的在於提供一種電子裝 置之製造方法,其即便於形成電子裝置用構件時、及將形成有電子裝置用構件之玻璃基板剝離後,玻璃基板表面之平坦性亦優異,其結果,可抑制電子裝置之生產良率之降低。又,本發明之目的亦在於提供一種用於該電子裝置之製造之玻璃積層體之製造方法。 The present invention has been made in view of the above problems, and an object thereof is to provide an electronic device. In the case of forming the electronic device member and peeling off the glass substrate on which the electronic device member is formed, the flatness of the surface of the glass substrate is excellent, and as a result, the production yield of the electronic device can be suppressed. reduce. Still another object of the present invention is to provide a method for producing a glass laminate for use in the manufacture of the electronic device.
本發明者對先前技術之問題進行研究,結果發現積層有玻璃基板之樹脂層表面之表面起伏與上述課題相關。基於該見解而進行銳意研究,結果發現藉由以下之構成可解決上述課題,從而完成本發明。 The inventors of the present invention have studied the problems of the prior art and found that the surface undulation of the surface of the resin layer on which the glass substrate is laminated is related to the above problem. Based on this insight, it was found that the above problems can be solved by the following configuration, and the present invention has been completed.
即,為了達成上述目的,本發明之第1態樣係一種電子裝置之製造方法,其包括下述步驟:積層步驟,係以具有支持基板與固定於支持基板單面之樹脂層且該樹脂層之露出表面顯示易剝離性的附樹脂層之支持基板之該樹脂層之露出表面、及具有第1主面及第2主面之板厚0.3mm以下的玻璃基板之該第1主面作為積層面,將該附樹脂層之支持基板與玻璃基板密接積層而獲得玻璃積層體;研磨步驟,係研磨該玻璃積層體中之該玻璃基板之第2主面;構件形成步驟,係於該玻璃基板之經研磨之該第2主面上形成電子裝置用構件;及分離步驟,係將積層有該電子裝置用構件之該玻璃基板與該附樹脂層之支持基板分離,獲得包含該玻璃基板與該電子裝置用構件之電子裝置;並且該樹脂層之露出表面上之表面起伏以濾波中心線起伏(WCA)計為0.100μm以下。 That is, in order to achieve the above object, a first aspect of the invention is a method of manufacturing an electronic device, comprising the steps of: a laminating step of a resin layer having a support substrate and a single side fixed to the support substrate; and the resin layer The exposed surface of the resin layer of the support substrate with the resin layer exposed on the exposed surface, and the first main surface of the glass substrate having the first main surface and the second main surface having a thickness of 0.3 mm or less as a laminate a surface of the support substrate with the resin layer and the glass substrate are laminated to obtain a glass laminate; the polishing step is to polish the second main surface of the glass substrate in the glass laminate; and the member forming step is performed on the glass substrate a member for forming an electronic device on the second main surface to be polished; and a separating step of separating the glass substrate on which the member for the electronic device is laminated and the support substrate with the resin layer, thereby obtaining the glass substrate and the substrate An electronic device for the member for an electronic device; and the surface undulation on the exposed surface of the resin layer is 0.100 μm or less in terms of filter center line undulation (W CA ).
於第1態樣中,較佳為樹脂層之樹脂為矽酮樹脂。 In the first aspect, the resin of the resin layer is preferably an fluorenone resin.
於第1態樣中,較佳為矽酮樹脂為有機烯基聚矽氧烷與有機氫聚矽氧烷之反應硬化物。 In the first aspect, the fluorenone resin is preferably a reaction hardened product of an organic alkenyl polysiloxane and an organic hydrogen polyoxyalkylene.
於第1態樣中,較佳為研磨為化學機械研磨(CMP,Chemical Mechanical Polishing)。 In the first aspect, the polishing is preferably CMP (Chemical Mechanical Polishing).
於第1態樣中,較佳為玻璃基板包含以氧化物基準之質量百分率 表示,含有下述成分之無鹼玻璃:SiO2:50~66%、Al2O3:10.5~24%、B2O3:0~12%、MgO:0~8%、CaO:0~14.5%、SrO:0~24%、BaO:0~13.5%、MgO+CaO+SrO+BaO:9~29.5%、及ZrO2:0~5%。 In the first aspect, the glass substrate preferably comprises an alkali-free glass containing the following components in terms of an oxide-based mass percentage: SiO 2 : 50 to 66%, and Al 2 O 3 : 10.5 to 24%, B. 2 O 3 : 0~12%, MgO: 0~8%, CaO: 0~14.5%, SrO: 0~24%, BaO: 0~13.5%, MgO+CaO+SrO+BaO: 9~29.5%, And ZrO 2 : 0 to 5%.
於第1態樣中,較佳為玻璃基板包含以氧化物基準之質量百分率表示,含有下述成分之無鹼玻璃:SiO2:58~66%、Al2O3:15~22%、B2O3:5~12%、MgO:0~8%、CaO:0~9%、SrO:3~12.5%、BaO:0~2%、及MgO+CaO+SrO+BaO:9~18%。 In the first aspect, the glass substrate preferably comprises an alkali-free glass containing the following components in terms of an oxide-based mass percentage: SiO 2 : 58 to 66%, and Al 2 O 3 : 15 to 22%, B. 2 O 3 : 5~12%, MgO: 0~8%, CaO: 0~9%, SrO: 3~12.5%, BaO: 0~2%, and MgO+CaO+SrO+BaO: 9~18% .
本發明之第2態樣係一種玻璃積層體之製造方法,上述玻璃積層體包含經研磨之玻璃基板,上述方法包括以下步驟:積層步驟,係以具有支持基板與固定於支持基板單面之樹脂層且該樹脂層之露出表面表現出易剝離性的附樹脂層之支持基板之該樹脂層之露出表面、及具有第1主面及第2主面之板厚0.3mm以下的玻璃基板之該第1主面作為積層面,將該附樹脂層之支持基板與玻璃基板密接積層而獲得玻璃積 層體;及研磨步驟,係研磨該玻璃積層體中之該玻璃基板之第2主面;並且該樹脂層表面之表面起伏以濾波中心線起伏(WCA)計為0.100μm以下。 A second aspect of the present invention provides a method for producing a glass laminate, wherein the glass laminate comprises a ground glass substrate, and the method comprises the steps of: a step of laminating a resin having a support substrate and a single surface fixed to the support substrate The exposed surface of the resin layer of the support substrate with the resin layer on the exposed surface of the resin layer and the glass substrate having a thickness of 0.3 mm or less of the first main surface and the second main surface The first main surface serves as an accumulation layer, and the support substrate of the resin layer and the glass substrate are laminated to each other to obtain a glass laminate; and the polishing step of polishing the second main surface of the glass substrate in the glass laminate; and The surface undulation of the surface of the resin layer was 0.100 μm or less in terms of filter center line undulation (W CA ).
於第2態樣中,較佳為樹脂層之樹脂為矽酮樹脂。 In the second aspect, the resin of the resin layer is preferably an fluorenone resin.
於第2態樣中,較佳為矽酮樹脂為有機烯基聚矽氧烷與有機氫聚矽氧烷之反應硬化物。 In the second aspect, the fluorenone resin is preferably a reaction hardened product of an organic alkenyl polysiloxane and an organic hydrogen polyoxyalkylene.
於第2態樣中,較佳為研磨為化學機械研磨(CMP)。 In the second aspect, the polishing is preferably chemical mechanical polishing (CMP).
藉由本發明,可提供一種電子裝置之製造方法,其即便於形成電子裝置用構件時、及將形成有電子裝置用構件之玻璃基板剝離後,玻璃基板表面之平坦性亦優異,其結果,可抑制電子裝置之生產良率之降低。又,本發明亦可提供一種用於該電子裝置之製造之玻璃積層體之製造方法。 According to the present invention, it is possible to provide a method for producing an electronic device which is excellent in flatness of a surface of a glass substrate even when a member for an electronic device is formed and a glass substrate on which an electronic device member is formed is peeled off. Suppressing the reduction in production yield of electronic devices. Moreover, the present invention can also provide a method of manufacturing a glass laminate for use in the manufacture of the electronic device.
10、100‧‧‧玻璃積層體 10, 100‧‧ ‧ glass laminate
12、112‧‧‧支持基板 12, 112‧‧‧ Support substrate
14、114‧‧‧樹脂層 14, 114‧‧‧ resin layer
14a‧‧‧樹脂層表面 14a‧‧‧Resin layer surface
16、116‧‧‧玻璃基板 16, 116‧‧‧ glass substrate
16a、116a‧‧‧玻璃基板之第1主面 16a, 116a‧‧‧ the first main surface of the glass substrate
16b、116b‧‧‧玻璃基板之第2主面 16b, 116b‧‧‧ the second main surface of the glass substrate
18‧‧‧附樹脂層之支持基板 18‧‧‧Support substrate with resin layer
20‧‧‧附電子裝置用構件之積層體 20‧‧‧Laminated body of components for electronic devices
22‧‧‧電子裝置用構件 22‧‧‧Members for electronic devices
24‧‧‧電子裝置 24‧‧‧Electronic devices
圖1係本發明之電子裝置之製造方法之步驟圖。 BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view showing the steps of a method of manufacturing an electronic device of the present invention.
圖2係本發明之玻璃積層體之一實施形態之模式剖面圖。 Fig. 2 is a schematic cross-sectional view showing an embodiment of a glass laminate of the present invention.
圖3係本發明之附電子裝置用構件之積層體之一實施形態之模式剖面圖。 Fig. 3 is a schematic cross-sectional view showing an embodiment of a laminate of members for an electronic device according to the present invention.
圖4(a)~圖4(c)係使用先前技術之玻璃積層體之研磨步驟及分離步驟之模式剖面圖。 4(a) to 4(c) are schematic cross-sectional views showing a grinding step and a separating step of the prior art glass laminate.
以下參照圖式對用以實施本發明之形態進行說明,但本發明並不受以下實施形態限制,可不脫離本發明之範圍而對以下之實施形態施加各種變形及置換。 The present invention is not limited by the following embodiments, and various modifications and substitutions may be made to the embodiments described below without departing from the scope of the invention.
再者,於本發明中,以下將支持基板之層與樹脂層之界面之剝離強度高於樹脂層與玻璃基板之層之界面之剝離強度的情況稱為樹脂 層與玻璃基板以可剝離之方式密接,支持基板與樹脂層係固定。 Furthermore, in the present invention, the case where the peeling strength of the interface between the layer of the substrate and the resin layer is higher than the peeling strength of the interface between the layer of the resin layer and the layer of the glass substrate is hereinafter referred to as a resin. The layer and the glass substrate are detachably adhered to each other, and the support substrate and the resin layer are fixed.
本發明者等人發現,作為先前技術(專利文獻1之發明)所使用之積層體中之玻璃基板之表面存在起伏之原因,可列舉玻璃基板本身之表面之起伏以及與玻璃基板相接之樹脂層表面之起伏,尤其是後者之因素較大。因此,首先,利用圖4對樹脂層表面之起伏與先前技術之問題之相關性進行說明。 The inventors of the present invention have found that the surface of the glass substrate in the laminate used in the prior art (the invention of Patent Document 1) has undulations, and the surface of the glass substrate itself is undulated and the resin is in contact with the glass substrate. The undulations of the surface of the layer, especially the latter, are greater. Therefore, first, the correlation between the fluctuation of the surface of the resin layer and the problems of the prior art will be described using FIG.
如圖4(a)所示,先前之玻璃積層體100中,於支持基板112上之樹脂層114表面存在起伏之類之表面凹凸之情形時,由於與該表面相接而配置之玻璃基板116之板厚較薄,故而玻璃基板116以追隨樹脂層114表面之表面起伏之形式變形(參照圖4(a))。其後,藉由實施研磨步驟,玻璃基板116之露出之第1主面116a暫時平坦化。然而,若將玻璃基板116與樹脂層114剝離,則玻璃基板116之原本平坦之第2主面116b之恢復至平坦之力發揮作用而平坦化,但另一方面,應力施加於研磨步驟時平坦之第1主面116a而再次出現表面起伏。即,樹脂層114之表面起伏轉印至玻璃基板之表面。此種玻璃基板116剝離後之表面起伏之產生於在玻璃基板116之第1主面116a上形成電子裝置用構件後亦會產生。因此,若僅設置研磨步驟則無法獲得所需之效果。 As shown in FIG. 4(a), in the case of the glass laminate 100 of the prior art, when the surface of the resin layer 114 on the support substrate 112 has surface irregularities such as undulations, the glass substrate 116 disposed in contact with the surface is provided. Since the thickness of the plate is thin, the glass substrate 116 is deformed in such a manner as to follow the surface undulation of the surface of the resin layer 114 (see FIG. 4(a)). Thereafter, by exposing the polishing step, the exposed first main surface 116a of the glass substrate 116 is temporarily flattened. However, when the glass substrate 116 and the resin layer 114 are peeled off, the original flat second main surface 116b of the glass substrate 116 returns to a flat force and acts to flatten. However, the stress is applied to the polishing step to be flat. The surface undulation occurs again on the first main surface 116a. That is, the surface of the resin layer 114 is undulated and transferred to the surface of the glass substrate. The surface undulation after peeling of the glass substrate 116 is also generated after the electronic device member is formed on the first main surface 116a of the glass substrate 116. Therefore, if only the grinding step is set, the desired effect cannot be obtained.
因此,本發明者等人發現,藉由將樹脂層表面之起伏設於特定值以下,並且設置研磨步驟,可解決上述課題。藉由減小樹脂層表面之起伏,可減小積層於其上之玻璃基板之變形,且即便於下述分離步驟後,亦可抑制樹脂層表面之起伏轉印至玻璃基板之表面。進而,藉由研磨步驟,可去除玻璃基板本身之表面起伏或表面之微小瑕疵。尤其是若樹脂層之露出表面上之表面起伏以濾波中心線起伏(WCA)計為0.100μm以下,則積層於其上之玻璃基板之表面起伏亦成為其以下,可達成上述專利文獻2所述之電子裝置之良率之降低之抑制或可靠性之確保。 Therefore, the inventors of the present invention have found that the above problem can be solved by setting the undulation of the surface of the resin layer to a specific value or less and providing a polishing step. By reducing the undulation of the surface of the resin layer, the deformation of the glass substrate laminated thereon can be reduced, and even after the separation step described below, the undulation of the surface of the resin layer can be suppressed from being transferred to the surface of the glass substrate. Further, by the grinding step, the surface undulation of the glass substrate itself or the minute flaw of the surface can be removed. In particular, if the surface undulation on the exposed surface of the resin layer is 0.100 μm or less in terms of the filter center line undulation (W CA ), the surface undulation of the glass substrate laminated thereon is also equal to or less than the above, and Patent Document 2 can be achieved. The suppression of the reduction in the yield of the electronic device or the assurance of the reliability.
以下對電子裝置及積層體之製造方法以各步驟順序進行說明。 Hereinafter, the electronic device and the method of manufacturing the laminated body will be described in the order of the respective steps.
圖1係表示本發明之電子裝置之製造方法之一實施形態中之製造步驟的流程圖。如圖1所示,電子裝置之製造方法包括積層步驟(S102)、研磨步驟(S104)、構件形成步驟(S106)及分離步驟(S108)。 BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a flow chart showing the manufacturing steps in an embodiment of a method of manufacturing an electronic device according to the present invention. As shown in FIG. 1, the manufacturing method of the electronic device includes a laminating step (S102), a grinding step (S104), a member forming step (S106), and a separating step (S108).
以下對各步驟所使用之材料及其程序進行詳細敍述。首先,對積層步驟(S102)進行詳細敍述。 The materials used in each step and their procedures are described in detail below. First, the lamination step (S102) will be described in detail.
積層步驟S102係以附樹脂層之支持基板之樹脂層之露出表面與具有第1主面及第2主面之特定之板厚的玻璃基板之第1主面作為積層面,將附樹脂層之支持基板之樹脂層與玻璃基板密接積層,獲得玻璃積層體的步驟。藉由實施該步驟S102,可獲得下述研磨步驟S104及構件形成步驟S106所使用之玻璃積層體。 In the laminating step S102, the exposed surface of the resin layer of the support substrate with the resin layer and the first main surface of the glass substrate having the specific thickness of the first main surface and the second main surface are used as a layer, and the resin layer is attached. The step of obtaining a glass laminate by supporting the resin layer of the substrate and the glass substrate in close contact with each other. By performing this step S102, the glass laminate which is used in the following polishing step S104 and member forming step S106 can be obtained.
圖2係本發明之玻璃積層體之一例之模式剖面圖。 Fig. 2 is a schematic cross-sectional view showing an example of a glass laminate of the present invention.
如圖2所示,玻璃積層體10係支持基板12之層、玻璃基板16之層、及存在於該等間之樹脂層14之積層體。樹脂層14之一面固定於支持基板12之層上,其另一面與玻璃基板16之第1主面16a相接,樹脂層14與玻璃基板16之界面係以可剝離之方式密接。換言之,樹脂層14對玻璃基板16之第1主面16a具備易剝離性。 As shown in FIG. 2, the glass laminate 10 supports a layer of the substrate 12, a layer of the glass substrate 16, and a laminate of the resin layer 14 present between the layers. One surface of the resin layer 14 is fixed to the layer of the support substrate 12, and the other surface thereof is in contact with the first main surface 16a of the glass substrate 16, and the interface between the resin layer 14 and the glass substrate 16 is detachably adhered. In other words, the resin layer 14 has easy peelability to the first main surface 16a of the glass substrate 16.
包含支持基板12之層及樹脂層14之兩層部分於製造液晶面板等電子裝置用構件之構件形成步驟S106中加強玻璃基板16。再者,將玻璃積層體10之包含支持基板12之層及樹脂層14之兩層部分自玻璃積層體10獨立者稱為附樹脂層之支持基板18。於附樹脂層之支持基板18中,樹脂層14係固定於支持基板12上。 The glass substrate 16 is reinforced in a member forming step S106 in which a layer of the support substrate 12 and the resin layer 14 are formed in a member for manufacturing an electronic device member such as a liquid crystal panel. In addition, the two layers of the glass laminate 10 including the support substrate 12 and the resin layer 14 are referred to as the support substrate 18 with the resin layer independently of the glass laminate 10 . In the support substrate 18 with the resin layer attached, the resin layer 14 is fixed to the support substrate 12.
該玻璃積層體10使用至構件形成步驟S106為止。即,該玻璃積層體10係使用至於該玻璃基板16之第2主面16b表面上形成液晶顯示裝置等電子裝置用構件為止。其後,附樹脂層之支持基板18之層於其與 玻璃基板16之層之界面被剝離,附樹脂層之支持基板18之層不成為構成電子裝置之部分。經分離之附樹脂層之支持基板18可與新的玻璃基板16積層而作為玻璃積層體10再利用。 This glass laminate 10 is used up to the member forming step S106. In other words, the glass laminate 10 is formed by forming a member for an electronic device such as a liquid crystal display device on the surface of the second main surface 16b of the glass substrate 16. Thereafter, the layer of the support substrate 18 with the resin layer is The interface between the layers of the glass substrate 16 is peeled off, and the layer of the support substrate 18 with the resin layer is not part of the electronic device. The support substrate 18 with the separated resin layer can be laminated with the new glass substrate 16 to be reused as the glass laminate 10.
以下首先對構成玻璃積層體之各層(支持基板、樹脂層、玻璃基板)進行詳細敍述,其後對該步驟S102之程序進行詳細敍述。 Hereinafter, each layer (support substrate, resin layer, glass substrate) constituting the glass laminate will be described in detail first, and then the procedure of step S102 will be described in detail.
支持基板12與樹脂層14協動,支持玻璃基板16而將其增強,於下述構件形成步驟S106(電子裝置用構件之製造步驟)中電子裝置用構件之製造時防止玻璃基板16之變形、損傷、破損等。又,於使用厚度比先前薄之玻璃基板之情形時,藉由製成與先前之玻璃基板相同厚度之玻璃積層體10,可於構件形成步驟S106中使用適合先前厚度之玻璃基板之製造技術或製造設備,此亦為使用支持基板12之目的之一。 The support substrate 12 and the resin layer 14 cooperate to support the glass substrate 16 and enhance the deformation of the glass substrate 16 during the manufacture of the electronic device member in the following member forming step S106 (manufacturing step of the electronic device member). Damage, damage, etc. Further, when a glass substrate having a thickness smaller than that of the prior art is used, by using the glass laminate 10 having the same thickness as the previous glass substrate, the manufacturing process of the glass substrate suitable for the previous thickness can be used in the member forming step S106 or Manufacturing equipment, which is also one of the purposes of using the support substrate 12.
作為支持基板12,例如可使用玻璃板、塑膠板、SUS板、陶瓷板、金屬板等。於構件形成步驟S106伴有熱處理之情形時,支持基板12較佳為由與玻璃基板16之線膨脹係數之差較小之材料形成,更佳為由與玻璃基板16相同之材料形成,支持基板12較佳為玻璃板。支持基板12尤佳為包含與玻璃基板16相同之玻璃材料之玻璃板。 As the support substrate 12, for example, a glass plate, a plastic plate, a SUS plate, a ceramic plate, a metal plate, or the like can be used. In the case where the member forming step S106 is accompanied by the heat treatment, the support substrate 12 is preferably formed of a material having a small difference in linear expansion coefficient from the glass substrate 16, more preferably formed of the same material as the glass substrate 16, and the support substrate. 12 is preferably a glass plate. The support substrate 12 is particularly preferably a glass plate containing the same glass material as the glass substrate 16.
支持基板12之積層有下述樹脂層14之表面之表面起伏較佳為以濾波中心線起伏(WCA)計為0.100μm以下。此處,「表面起伏」係使用公知之觸針式之表面形狀測定裝置,測定JIS B-0610(1987)所記載之WCA(濾波中心線起伏)而得之值。再者,於本發明中,將濾波起伏曲線之截斷值設為0.8mm,將測定長度設為40mm。若表面起伏為上述範圍內,則下述樹脂層14之與玻璃基板16接觸之表面(易剝離性表面)14a之表面起伏變小,結果即便於下述分離步驟S108後,形成有電子裝置用構件之玻璃基板16之第2主面之表面起伏亦較小,可抑制電子裝置用構件之位置偏移之產生。其中,就上述效果更優異之方面而 言,濾波中心線起伏較佳為0.070μm以下,更佳為0.030μm以下。再者,下限並無特別限制,較佳為0μm。 The surface undulation of the surface of the support substrate 12 having the resin layer 14 described below is preferably 0.100 μm or less in terms of the filter center line undulation (W CA ). Here, the "surface undulation" is a value obtained by measuring a W CA (filter center line undulation) described in JIS B-0610 (1987) using a known stylus type surface shape measuring device. Further, in the present invention, the cutoff value of the filter fluctuation curve is set to 0.8 mm, and the measurement length is set to 40 mm. When the surface undulation is within the above range, the surface of the resin layer 14 which is in contact with the glass substrate 16 (the easily peelable surface) 14a has a small surface undulation, and as a result, the electronic device is formed even after the separation step S108 described below. The surface of the second main surface of the glass substrate 16 of the member is also undulated, and the occurrence of positional displacement of the member for electronic device can be suppressed. Among them, in terms of the above-described effects being more excellent, the filter center line undulation is preferably 0.070 μm or less, more preferably 0.030 μm or less. Further, the lower limit is not particularly limited, and is preferably 0 μm.
再者,作為降低支持基板12表面之表面起伏之方法,可使用公知之研磨方法(例如公知之物理研磨或化學研磨;更具體而言為CMP等)。 Further, as a method of reducing the surface undulation of the surface of the support substrate 12, a known polishing method (for example, known physical polishing or chemical polishing; more specifically, CMP or the like) can be used.
支持基板12之厚度可厚於玻璃基板16,亦可薄於玻璃基板16。較佳為基於玻璃基板16之厚度、樹脂層14之厚度及玻璃積層體10之厚度而選擇支持基板12之厚度。例如,現行之構件形成步驟係以處理厚度0.5mm之基板之方式設計,於玻璃基板16之厚度與樹脂層14之厚度之和為0.1mm之情形時,將支持基板12之厚度設為0.4mm。支持基板12之厚度於通常情形時較佳為0.2~5.0mm。 The thickness of the support substrate 12 may be thicker than the glass substrate 16, or may be thinner than the glass substrate 16. The thickness of the support substrate 12 is preferably selected based on the thickness of the glass substrate 16, the thickness of the resin layer 14, and the thickness of the glass laminate 10. For example, the current member forming step is designed to handle a substrate having a thickness of 0.5 mm. When the sum of the thickness of the glass substrate 16 and the thickness of the resin layer 14 is 0.1 mm, the thickness of the support substrate 12 is set to 0.4 mm. . The thickness of the support substrate 12 is preferably 0.2 to 5.0 mm in the usual case.
於支持基板12為玻璃板之情形時,就容易處理、不易破裂等理由而言,玻璃板之厚度較佳為0.08mm以上。又,就期待於形成電子裝置用構件後進行剝離時不破裂而適度撓曲般之剛性之理由而言,玻璃板之厚度較佳為1.0mm以下。 When the support substrate 12 is a glass plate, the thickness of the glass plate is preferably 0.08 mm or more for reasons of easy handling and difficulty in cracking. In addition, it is expected that the thickness of the glass plate is preferably 1.0 mm or less for the reason that the member for an electronic device is formed and the rigidity is appropriately flexed without being broken at the time of peeling.
玻璃基板16與支持基板12於25~300℃下之平均線膨脹係數(以下簡稱為「平均線膨脹係數」)之差較佳為500×10-7/℃以下,更佳為300×10-7/℃以下,進而較佳為200×10-7/℃以下。若差過大,則存在構件形成步驟S106中之加熱冷卻時,玻璃積層體10急遽翹曲、或玻璃基板16與附樹脂層之支持基板18剝離之可能性。於玻璃基板16之材料與支持基板12之材料相同之情形時,可抑制此種問題之產生。 The difference between the average linear expansion coefficient (hereinafter simply referred to as "average linear expansion coefficient") of the glass substrate 16 and the support substrate 12 at 25 to 300 ° C is preferably 500 × 10 -7 / ° C or less, more preferably 300 × 10 - 7 / ° C or less, further preferably 200 × 10 -7 / ° C or less. When the difference is too large, there is a possibility that the glass laminate 10 is rapidly warped or the glass substrate 16 and the support substrate 18 with the resin layer are peeled off during the heating and cooling in the member forming step S106. When the material of the glass substrate 16 is the same as that of the support substrate 12, the occurrence of such a problem can be suppressed.
樹脂層14係固定於支持基板12之至少單面上,又,與玻璃基板16以可剝離之方式密接。樹脂層14於進行將玻璃基板16與支持基板12分離之操作前防止玻璃基板16之位置偏移,並且藉由分離操作而容易地自玻璃基板16剝離,防止玻璃基板16等因分離操作而破損。又,樹 脂層14固定於支持基板12上,於分離操作中樹脂層14與支持基板12不剝離,可藉由分離操作而獲得附樹脂層之支持基板18。再者,為了使樹脂層14與玻璃基板16之界面容易藉由分離操作而剝離,較佳於開始分離操作時於其界面設置剝離起點而進行剝離。 The resin layer 14 is fixed to at least one surface of the support substrate 12, and is detachably adhered to the glass substrate 16. The resin layer 14 prevents the position of the glass substrate 16 from being displaced before the operation of separating the glass substrate 16 from the support substrate 12, and is easily peeled off from the glass substrate 16 by a separation operation, thereby preventing the glass substrate 16 and the like from being broken due to the separation operation. . Tree The grease layer 14 is fixed to the support substrate 12, and the resin layer 14 and the support substrate 12 are not peeled off during the separation operation, and the support substrate 18 with the resin layer can be obtained by a separation operation. Further, in order to facilitate the separation of the interface between the resin layer 14 and the glass substrate 16 by the separation operation, it is preferable to provide a peeling starting point at the interface at the time of starting the separation operation and peeling off.
樹脂層14之與玻璃基板16相接之表面14a以可剝離之方式密接於玻璃基板16之第1主面16a。本發明中,將該樹脂層表面14a之可容易地剝離之性質稱為易剝離性(剝離性)。 The surface 14a of the resin layer 14 that is in contact with the glass substrate 16 is detachably adhered to the first main surface 16a of the glass substrate 16. In the present invention, the property of easily peeling the surface of the resin layer 14a is referred to as easy peelability (peelability).
於本發明中,上述固定與(可剝離之)密接於剝離強度(即剝離所需之應力)上存在差異,固定係指相對於密接而言,剝離強度較大。 In the present invention, the fixing is indistinguishable from the peeling strength (i.e., the stress required for peeling), and the fixing means that the peeling strength is large with respect to the adhesion.
又,所謂可剝離之密接,係指可剝離,同時亦指可不產生固定之面之剝離而剝離。具體而言,意指本發明之玻璃積層體10中,進行將玻璃基板16與支持基板12分離之操作之情形時,於密接之面剝離,不於固定之面剝離。因此,若進行將玻璃積層體10分離為玻璃基板16與支持基板12之操作,則玻璃積層體10分離為玻璃基板16與附樹脂層之支持基板18兩者。 Further, the term "peelable" means peeling, and means peeling without peeling off the surface to be fixed. Specifically, in the case where the operation of separating the glass substrate 16 from the support substrate 12 is performed in the glass laminate 10 of the present invention, the surface is adhered to the surface to be adhered, and the surface is not peeled off from the fixed surface. Therefore, when the operation of separating the glass laminate 10 into the glass substrate 16 and the support substrate 12 is performed, the glass laminate 10 is separated into both the glass substrate 16 and the support substrate 18 with the resin layer.
樹脂層14較佳為藉由接著力或黏著力等較強之結合力而固定於支持基板12表面上。例如,藉由使反應硬化性樹脂於支持基板12表面反應硬化而將硬化之樹脂接著於支持基板12表面。又,可於支持基板12表面與樹脂層14之間實施產生較強之結合力之處理(例如使用偶合劑之處理)而提高支持基板12表面與樹脂層14之間之結合力。 The resin layer 14 is preferably fixed to the surface of the support substrate 12 by a strong bonding force such as an adhesive force or an adhesive force. For example, the cured resin is bonded to the surface of the support substrate 12 by reactively curing the reaction curable resin on the surface of the support substrate 12. Further, a process of generating a strong bonding force (for example, a treatment using a coupling agent) between the surface of the support substrate 12 and the resin layer 14 can be performed to improve the bonding force between the surface of the support substrate 12 and the resin layer 14.
另一方面,較佳為以較弱之結合力使樹脂層14與玻璃基板16之第1主面16a結合,例如以由固體分子間之凡得瓦力所產生之結合力而結合。與玻璃基板16相接前之樹脂層表面14a較佳為易剝離性之表面,藉由使該易剝離性之樹脂層表面14a與玻璃基板16之第1主面16a接觸,可以較弱之結合力使兩表面結合。即,若樹脂層表面14a為易剝離性,則其與玻璃基板16之第1主面16a之界面上之剝離性更良好。 兩表面係無間隙地相接觸,於本發明中將該狀態稱為密接。 On the other hand, it is preferable to bond the resin layer 14 to the first main surface 16a of the glass substrate 16 with a weak bonding force, for example, by a bonding force generated by the van der Waals force between the solid molecules. The surface of the resin layer 14a before the glass substrate 16 is in contact with the glass substrate 16 is preferably a surface which is easily peelable, and the surface of the resin layer 14a which is easily peelable is brought into contact with the first main surface 16a of the glass substrate 16 to be weakly bonded. Force combines the two surfaces. In other words, when the resin layer surface 14a is easily peelable, the peeling property at the interface with the first main surface 16a of the glass substrate 16 is further improved. The two surfaces are in contact with each other without a gap, and this state is referred to as a close contact in the present invention.
再者,藉由對通常含義下不為易剝離性之樹脂層之表面賦予易剝離性之表面處理,亦可使樹脂層表面成為易剝離性。又,即便為通常含義下不為易剝離性之樹脂層,只要為可以相對於上述固定中之結合力而言充分低之結合力進行密接之樹脂(且只要可不產生玻璃基板或支持基板之破損等而剝離),則亦可不實施表面處理而用作樹脂層之材料。 Further, the surface of the resin layer can be easily peeled off by imparting a surface treatment to the surface of the resin layer which is not easily peelable in a usual sense. In addition, the resin layer which is not easily peelable in the usual sense is a resin which can be intimately bonded to the bonding force which is sufficiently low in the above-mentioned fixation (and as long as the glass substrate or the support substrate is not damaged) Alternatively, if it is peeled off, it may be used as a material of the resin layer without performing surface treatment.
尤其是於與玻璃基板相接之樹脂層表面為易剝離性之情形時,於剝離時因樹脂層表面之破損而使其一部分殘留於玻璃基板表面之情況較少。 In particular, when the surface of the resin layer that is in contact with the glass substrate is easily peelable, a part of the surface of the resin layer remains on the surface of the glass substrate due to breakage of the surface of the resin layer during peeling.
如上所述,樹脂層14對支持基板12之表面之結合力相對高於樹脂層14對玻璃基板之第1主面16a之結合力。因此,樹脂層14與支持基板12之間之剝離強度高於樹脂層14與玻璃基板16之間之剝離強度。樹脂層14與支持基板12之間較佳為藉由黏著或接著而結合。但並不限定於此,只要相對高於樹脂層14對玻璃基板16之結合力,則樹脂層14與支持基板12之間亦可以由其他結合力所產生之力結合。 As described above, the bonding force of the resin layer 14 to the surface of the support substrate 12 is relatively higher than the bonding force of the resin layer 14 to the first main surface 16a of the glass substrate. Therefore, the peeling strength between the resin layer 14 and the support substrate 12 is higher than the peel strength between the resin layer 14 and the glass substrate 16. Preferably, the resin layer 14 and the support substrate 12 are bonded by adhesion or adhesion. However, the present invention is not limited thereto, and the resin layer 14 and the support substrate 12 may be bonded by a force generated by another bonding force as long as the bonding strength of the resin layer 14 to the glass substrate 16 is relatively higher.
樹脂層14之表面14a(與玻璃基板16相接之表面)上之表面起伏以濾波中心線起伏(WCA)計為0.100μm以下。「表面起伏」係使用公知之觸針式之表面形狀測定裝置,測定JIS B-0610(1987)所記載之WCA(濾波中心線起伏)而得之值。再者,於本發明中,將濾波起伏曲線之截斷值設為0.8mm,將測定長度設為40mm。若表面起伏為上述範圍內,則即便於下述分離步驟S108後,亦可抑制對形成有電子裝置用構件之玻璃基板16之第2主面產生表面起伏。結果,可抑制電子裝置用構件之位置偏移之產生。就本效果更優異之方面而言,較佳為0.070μm以下,更佳為0.030μm以下。下限並無特別限制,較佳為0μm。 The surface undulation on the surface 14a of the resin layer 14 (the surface in contact with the glass substrate 16) is 0.100 μm or less in terms of the filter center line undulation (W CA ). The "surface undulation" is a value obtained by measuring a W CA (filter center line undulation) described in JIS B-0610 (1987) using a known stylus type surface shape measuring device. Further, in the present invention, the cutoff value of the filter fluctuation curve is set to 0.8 mm, and the measurement length is set to 40 mm. When the surface undulation is within the above range, surface undulation of the second main surface of the glass substrate 16 on which the electronic device member is formed can be suppressed even after the separation step S108 described below. As a result, the occurrence of the positional shift of the member for the electronic device can be suppressed. In view of the fact that the effect is more excellent, it is preferably 0.070 μm or less, more preferably 0.030 μm or less. The lower limit is not particularly limited, and is preferably 0 μm.
再者,作為降低樹脂層14表面之表面起伏之方法,可列舉:使 用表面起伏較小之支持基板12之方法;使用形成樹脂層14時所使用之樹脂層形成用組合物而於支持基板12上形成樹脂層形成用組合物之層(以下亦記為樹脂層形成用組合物層)後且硬化前,靜置具備樹脂層形成用組合物層之支持基板12之方法;將具有平坦之表面(以濾波中心線起伏(WCA)計為0.100μm以下之表面)之平坦構件(較佳為於加熱環境下)按壓至樹脂層14之表面而轉印平坦性之方法;蝕刻樹脂層14之表面之方法等。 Further, as a method of reducing the surface undulation of the surface of the resin layer 14, a method of using the support substrate 12 having a small surface relief is used, and a composition for forming a resin layer used for forming the resin layer 14 is used for the support substrate 12 a method in which a layer of a composition for forming a resin layer (hereinafter also referred to as a layer for forming a resin layer) is formed, and a support substrate 12 having a composition layer for forming a resin layer is left to stand before curing; (a method of transferring flatness to a surface of a resin layer 14 (preferably in a heating environment) with a filter center line undulation (W CA ) of 0.100 μm or less); etching the resin layer 14 Surface method, etc.
樹脂層14之大小並無特別限定。樹脂層14之大小可大於玻璃基板16或支持基板12,亦可小於玻璃基板16或支持基板12。 The size of the resin layer 14 is not particularly limited. The resin layer 14 may be larger than the glass substrate 16 or the support substrate 12, or may be smaller than the glass substrate 16 or the support substrate 12.
樹脂層14之厚度並無特別限定,就可減小表面起伏之方面而言,較佳為15μm以下,更佳為2~15μm,進而較佳為2~10μm。其原因在於,若樹脂層14之厚度為此種範圍內,則樹脂層14與玻璃基板16之密接變得充分。又,其原因在於,即便存在樹脂層14與玻璃基板16之間夾雜氣泡或異物之情況,亦可抑制玻璃基板16之形變缺陷之產生。又,若樹脂層14之厚度過厚,則形成需要時間及材料,故而不經濟,且表面起伏容易變大。 The thickness of the resin layer 14 is not particularly limited, and is preferably 15 μm or less, more preferably 2 to 15 μm, still more preferably 2 to 10 μm, in terms of surface undulation. The reason for this is that when the thickness of the resin layer 14 is within such a range, the adhesion between the resin layer 14 and the glass substrate 16 becomes sufficient. Moreover, the reason is that even if bubbles or foreign matter are interposed between the resin layer 14 and the glass substrate 16, the occurrence of deformation defects of the glass substrate 16 can be suppressed. Further, if the thickness of the resin layer 14 is too thick, it takes time and material to form, which is uneconomical and the surface undulation tends to become large.
再者,樹脂層14可包含兩層以上。此情形時「樹脂層14之厚度」意指所有層之合計之厚度。 Further, the resin layer 14 may include two or more layers. In this case, "the thickness of the resin layer 14" means the total thickness of all the layers.
又,於樹脂層14包含兩層以上之情形時,形成各層之樹脂之種類亦可不同。 Further, when the resin layer 14 contains two or more layers, the types of the resins forming the respective layers may be different.
較佳為樹脂層14包含玻璃轉移點低於室溫(25℃左右)、或不具有玻璃轉移點之材料。其原因在於,可更容易地與玻璃基板16剝離,同時與玻璃基板16之密接亦變得充分。 Preferably, the resin layer 14 comprises a material having a glass transition point lower than room temperature (about 25 ° C) or having no glass transition point. This is because the glass substrate 16 can be more easily peeled off and the adhesion to the glass substrate 16 is also sufficient.
又,由於多數情況下樹脂層14於構件形成步驟S106中進行加熱處理,故較佳為具有耐熱性。 Moreover, since the resin layer 14 is heat-processed in the member formation process S106 in many cases, it is preferable to have heat resistance.
又,若樹脂層14之彈性模數過高,則有與玻璃基板16之密接性 降低之傾向。另一方面,若樹脂層14之彈性模數過低,則剝離性降低。 Moreover, if the elastic modulus of the resin layer 14 is too high, there is adhesion to the glass substrate 16. Reduce the tendency. On the other hand, if the elastic modulus of the resin layer 14 is too low, the peelability is lowered.
形成樹脂層14之樹脂之種類並無特別限定。例如可列舉丙烯酸系樹脂、聚烯烴樹脂、聚胺基甲酸酯樹脂或矽酮樹脂。亦可混合若干種樹脂而使用。其中較佳為矽酮樹脂。其原因在於矽酮樹脂之耐熱性或剝離性優異。又,其原因在於,於支持基板12為玻璃板之情形時,藉由與玻璃板表面之矽烷醇基之縮合反應,容易固定於玻璃板上。矽酮樹脂層亦就即便於插入支持基板12與玻璃基板16之間之狀態下於例如大氣中、200℃左右處理1小時左右,剝離性亦幾乎未劣化方面而言較佳。 The kind of the resin forming the resin layer 14 is not particularly limited. For example, an acrylic resin, a polyolefin resin, a polyurethane resin, or an anthrone resin can be mentioned. It can also be used by mixing several kinds of resins. Among them, an anthrone resin is preferred. The reason for this is that the fluorenone resin is excellent in heat resistance or peelability. Further, the reason is that when the support substrate 12 is a glass plate, it is easily fixed to the glass plate by a condensation reaction with a stanol group on the surface of the glass plate. The fluorenone resin layer is preferably treated in a state of, for example, about 200 ° C in the air for about 1 hour in a state of being inserted between the support substrate 12 and the glass substrate 16 , and the peeling property is hardly deteriorated.
樹脂層14較佳為包含矽酮樹脂中用於剝離紙用之矽酮樹脂(硬化物)。剝離紙之剝離層之矽酮樹脂係使塗佈於剝離紙上之硬化性矽酮樹脂組合物之層硬化而形成。包含使用該硬化性矽酮樹脂組合物,並使該硬化性矽酮樹脂組合物於支持基板12之表面硬化而形成之硬化矽酮樹脂的樹脂層接著於支持基板12表面,並且其自由表面具有優異之易剝離性,故而較佳。又,由於柔軟性較高,故而即便氣泡或灰塵等異物混入樹脂層14與玻璃基板16之間,亦可抑制玻璃基板16之形變缺陷之產生。 The resin layer 14 is preferably an fluorenone resin (cured product) for separating paper in an anthrone resin. The fluorenone resin of the release layer of the release paper is formed by curing a layer of the curable fluorenone resin composition applied on the release paper. A resin layer comprising a hardenable ketone resin formed by curing the surface of the support substrate 12 by using the curable fluorenone resin composition, and a surface of the support substrate 12, and having a free surface thereof It is excellent in easy peelability. Moreover, since the flexibility is high, even if foreign matter such as bubbles or dust is mixed between the resin layer 14 and the glass substrate 16, the occurrence of deformation defects of the glass substrate 16 can be suppressed.
用於形成此種樹脂層14之硬化性矽酮樹脂組合物根據其硬化機制而分類為縮合反應型矽酮樹脂組合物、加成反應型矽酮樹脂組合物、紫外線硬化型矽酮樹脂組合物及電子束硬化型矽酮樹脂組合物,可使用任一者。該等中,較佳為加成反應型矽酮樹脂組合物。其原因在於容易進行硬化反應,硬化後之樹脂層表面14a之易剝離性之程度良好,且耐熱性亦較高。 The curable fluorenone resin composition for forming such a resin layer 14 is classified into a condensation reaction type fluorenone resin composition, an addition reaction type fluorene ketone resin composition, and an ultraviolet curing type fluorenone resin composition according to the curing mechanism thereof. And an electron beam hardening type fluorenone resin composition, either can be used. Among these, an addition reaction type fluorenone resin composition is preferred. This is because the curing reaction is easy, and the degree of easy peelability of the surface 14a of the resin layer after curing is good, and the heat resistance is also high.
加成反應型矽酮樹脂組合物係含有主劑及交聯劑、於鉑系觸媒等觸媒之存在下硬化之硬化性之組合物。加成反應型矽酮樹脂組合物 之硬化係藉由加熱處理而促進。加成反應型矽酮樹脂組合物中之主劑較佳為具有與矽原子鍵結之烯基(乙烯基等)之有機聚矽氧烷(即有機烯基聚矽氧烷;再者,較佳為直鏈狀),烯基等成為交聯點。加成反應型矽酮樹脂組合物中之交聯劑較佳為具有與矽原子鍵結之氫原子(氫矽烷基)之有機聚矽氧烷(即有機氫聚矽氧烷;再者,較佳為直鏈狀),氫矽烷基等成為交聯點。 The addition reaction type fluorenone resin composition is a composition containing a main component and a crosslinking agent, and is hardenable in the presence of a catalyst such as a platinum-based catalyst. Addition reaction type fluorenone resin composition The hardening is promoted by heat treatment. The main component in the addition reaction type fluorenone resin composition is preferably an organic polyoxyalkylene having an alkenyl group (vinyl group or the like) bonded to a ruthenium atom (i.e., an organic alkenyl polyoxy siloxane; Preferably, it is a linear chain, and an alkenyl group becomes a crosslinking point. The crosslinking agent in the addition reaction type fluorene ketone resin composition is preferably an organic polyoxy siloxane having a hydrogen atom (hydroalkylene group) bonded to a ruthenium atom (ie, an organic hydrogen polyoxy siloxane); Preferably, it is a linear chain), and a hydroquinone group or the like becomes a crosslinking point.
加成反應型矽酮樹脂組合物係藉由主劑與交聯劑之交聯點進行加成反應而硬化。 The addition reaction type fluorenone resin composition is hardened by an addition reaction of a crosslinking point of a main agent and a crosslinking agent.
又,硬化性矽酮樹脂組合物於形態上包括溶劑型、乳液型及無溶劑型,可使用任一型。該等中較佳為無溶劑型。其原因在於生產性、安全性、環境特性方面優異。又,其原因在於,由於不含在形成樹脂層14時之硬化時、即加熱硬化、紫外線硬化或電子束硬化時產生發泡之溶劑,故不易於樹脂層14中殘留氣泡。 Further, the curable fluorenone resin composition includes a solvent type, an emulsion type, and a solventless type, and any type may be used. These are preferably solventless. The reason is excellent in productivity, safety, and environmental characteristics. The reason for this is that since the solvent which is foamed at the time of curing in the formation of the resin layer 14, that is, heat curing, ultraviolet curing, or electron beam curing, is not contained, bubbles are not easily left in the resin layer 14.
又,作為硬化性矽酮樹脂組合物,具體而言,作為市售之商品名或型號,可列舉KNS-320A、KS-847(均為Shin-Etsu Silicone公司製造)、TPR6700(Momentive Performance Materials Japan有限公司製造)、乙烯基矽酮「8500」(荒川化學工業公司製造)與甲基氫聚矽氧烷「12031」(荒川化學工業公司製造)之組合、乙烯基矽酮「11364」(荒川化學工業公司製造)與甲基氫聚矽氧烷「12031」(荒川化學工業公司製造)之組合、乙烯基矽酮「11365」(荒川化學工業公司製造)與甲基氫聚矽氧烷「12031」(荒川化學工業公司製造)之組合等。 In addition, as a curable fluorene ketone resin composition, specifically, a commercially available product name or model, KNS-320A, KS-847 (all manufactured by Shin-Etsu Silicone Co., Ltd.), and TPR6700 (Momentive Performance Materials Japan) are mentioned. Co., Ltd., a combination of vinyl ketone "8500" (manufactured by Arakawa Chemical Industries Co., Ltd.) and methyl hydrogen polyoxyalkylene "12031" (manufactured by Arakawa Chemical Industries, Ltd.), vinyl ketone "11364" (Arakawa Chemical Co., Ltd.) (manufactured by Industrial Co., Ltd.) in combination with methyl hydrogen polyoxyalkylene "12031" (manufactured by Arakawa Chemical Industries Co., Ltd.), vinyl ketone "11365" (manufactured by Arakawa Chemical Industries Co., Ltd.) and methyl hydrogen polyoxyalkylene "12031" (a combination of Arakawa Chemical Industry Co., Ltd.) and the like.
再者,KNS-320A、KS-847及TPR6700為預先含有主劑與交聯劑之硬化性矽酮樹脂組合物。 Further, KNS-320A, KS-847, and TPR6700 are sclerosing fluorenone resin compositions containing a main component and a crosslinking agent in advance.
又,形成樹脂層14之矽酮樹脂(上述硬化性矽酮樹脂組合物之硬化物)較佳為具有矽酮樹脂層中之低分子量之矽酮等成分不易向玻璃基板16轉移之性質、即低矽酮轉移性。 Moreover, it is preferable that the fluorenone resin (the cured product of the curable fluorene ketone resin composition) which forms the resin layer 14 has a property that the components such as fluorenone having a low molecular weight in the fluorenone resin layer are less likely to be transferred to the glass substrate 16, that is, Low fluorenone transferability.
將樹脂層14固定於支持基板12上之方法並無特別限定。 The method of fixing the resin layer 14 to the support substrate 12 is not particularly limited.
例如,可於積層步驟S102前,實施於支持基板12上形成具有易剝離性之樹脂層14並固定之樹脂層形成步驟。例如,亦可實施將樹脂層形成用組合物(硬化性樹脂組合物)塗佈於支持基板12上而形成樹脂層14之樹脂層形成步驟。更具體而言,較佳為於支持基板12表面上形成成為樹脂層14之樹脂層形成用組合物層,繼而,使該樹脂層形成用組合物硬化而形成固定於支持基板12上之樹脂層14的方法。 For example, a resin layer forming step of forming the resin layer 14 having easy peelability on the support substrate 12 and fixing it may be performed before the laminating step S102. For example, a resin layer forming step of forming a resin layer 14 by applying a resin layer forming composition (curable resin composition) onto the support substrate 12 may be performed. More specifically, it is preferable to form a resin layer forming composition layer as the resin layer 14 on the surface of the support substrate 12, and then to cure the resin layer forming composition to form a resin layer fixed on the support substrate 12. 14 method.
又,例如亦可利用將膜狀之樹脂固定於支持基板12之表面之方法而形成樹脂層14。具體而言,可列舉為了賦予支持基板12之表面對膜之表面較高之固定力(較高之剝離強度)而對支持基板12之表面進行表面改質處理(底塗處理),固定於支持基板12上的方法。例如,可例示矽烷偶合劑之類之化學上提高固定力之化學方法(底塗處理)、如火焰(flame)處理般增加表面活性基之物理方法、藉由如噴砂處理般增加表面粗度而增加抓固力之機械處理方法等。 Further, for example, the resin layer 14 may be formed by a method of fixing a film-like resin to the surface of the support substrate 12. Specifically, the surface of the support substrate 12 is subjected to surface modification treatment (primer treatment) in order to impart a high fixing force (high peel strength) to the surface of the support substrate 12 to the surface of the support substrate 12, and is fixed to the support. The method on the substrate 12. For example, a chemical method for chemically increasing the fixing force such as a decane coupling agent (primer treatment), a physical method for increasing the surface active group such as a flame treatment, and a surface roughness by, for example, sand blasting, can be exemplified. Increase the mechanical treatment of the gripping force, etc.
於支持基板12表面上形成成為樹脂層14之樹脂層形成用組合物層,繼而使該樹脂層形成用組合物層硬化而形成樹脂層14之方法中,作為於支持基板12表面上形成樹脂層形成用組合物層之方法,例如可列舉將樹脂層形成用組合物塗佈於支持基板12上之方法。作為塗佈之方法,可列舉噴塗法、模塗法、旋轉塗佈法、浸漬塗佈法、輥塗法、棒式塗佈法、網版印刷法、凹版塗佈法等。可根據樹脂組合物之種類而自此種方法中適當選擇。 A resin layer forming composition layer to be the resin layer 14 is formed on the surface of the support substrate 12, and then the resin layer forming composition layer is cured to form the resin layer 14, and a resin layer is formed on the surface of the support substrate 12. The method of forming the composition layer may, for example, be a method of applying a composition for forming a resin layer onto the support substrate 12. Examples of the coating method include a spray coating method, a die coating method, a spin coating method, a dip coating method, a roll coating method, a bar coating method, a screen printing method, and a gravure coating method. It can be suitably selected from such a method depending on the kind of the resin composition.
又,於將成為樹脂層14之樹脂層形成用組合物塗佈於支持基板12上之情形時,其塗佈量較佳為1~100g/m2,更佳為5~20g/m2。 In the case where the resin layer forming composition of the resin layer 14 is applied onto the support substrate 12, the coating amount thereof is preferably from 1 to 100 g/m 2 , more preferably from 5 to 20 g/m 2 .
於樹脂層形成用組合物中含有溶劑及樹脂之情形時,為了製造上述具備表現出特定之表面起伏之表面之樹脂層14,較佳為將樹脂層 形成用組合物中之溶劑之含量相對於組合物總量設為70質量%以下,其中更佳為設為60質量%以下,進而較佳為設為50質量%以下。藉由將溶劑量調整於上述範圍內,可抑制溶劑自形成之組合物之層揮發之量,結果,可獲得表面起伏較少之樹脂層14。再者,關於溶劑量之下限,只要可塗佈樹脂層形成用組合物,則並無特別限制,就處理性等方面而言,較佳為30質量%以上。 When the solvent layer and the resin are contained in the resin layer-forming composition, in order to produce the resin layer 14 having the surface exhibiting the specific surface relief, the resin layer is preferably used. The content of the solvent in the composition for formation is 70% by mass or less based on the total amount of the composition, more preferably 60% by mass or less, and still more preferably 50% by mass or less. By adjusting the amount of the solvent within the above range, the amount of evaporation of the solvent from the layer of the formed composition can be suppressed, and as a result, the resin layer 14 having less surface undulation can be obtained. In addition, the lower limit of the amount of the solvent is not particularly limited as long as the resin layer-forming composition can be applied, and is preferably 30% by mass or more in terms of handleability and the like.
樹脂層形成用組合物所使用之溶劑之種類並無特別限制,就進一步抑制所獲得之樹脂層14之表面起伏之產生之方面而言,較佳為使用沸點為100℃以下之溶劑。 The type of the solvent to be used for the composition for forming a resin layer is not particularly limited, and it is preferable to use a solvent having a boiling point of 100 ° C or less in terms of suppressing the occurrence of surface undulation of the obtained resin layer 14 .
又,就可形成表面起伏更少之樹脂層14之方面而言,樹脂層形成用組合物之黏度較佳為40mPa˙s以下,更佳為20mPa˙s以下。再者,下限並無特別限制,就組合物之成膜性之方面而言,較佳為3mPa˙s以上。 Further, the resin layer-forming composition preferably has a viscosity of 40 mPa ̇s or less, more preferably 20 mPa ̇s or less, in terms of forming the resin layer 14 having less surface undulation. Further, the lower limit is not particularly limited, and is preferably 3 mPa ̇s or more in terms of film formability of the composition.
再者,作為樹脂層形成用組合物中所含之樹脂,可列舉可形成上述樹脂層之樹脂,其中可較佳地列舉硬化性矽酮。 In addition, as the resin contained in the resin layer-forming composition, a resin which can form the above resin layer is exemplified, and a curable fluorenone is preferably used.
例如,於由加成反應型矽酮樹脂組合物形成樹脂層14之情形時,藉由上述噴塗法等公知之方法,將包含有機烯基聚矽氧烷、有機氫聚矽氧烷與觸媒之混合物之樹脂層形成用組合物X塗佈於支持基板12上,其後進行加熱硬化。 For example, when the resin layer 14 is formed from the addition reaction type fluorenone resin composition, the organic alkenyl polysiloxane, the organic hydrogen polyoxyalkylene and the catalyst are contained by a known method such as the above-described spraying method. The resin layer forming composition X of the mixture is applied onto the support substrate 12, and then heat-hardened.
加熱硬化條件根據觸媒之調配量而有所不同,於大氣中,50℃~250℃下、較佳為100℃~200℃下進行反應。又,將該情形時之反應時間設為5~60分鐘,較佳設為10~30分鐘。 The heat curing conditions vary depending on the amount of the catalyst to be mixed, and the reaction is carried out in the air at 50 ° C to 250 ° C, preferably at 100 ° C to 200 ° C. Further, the reaction time in this case is set to 5 to 60 minutes, preferably 10 to 30 minutes.
藉由使樹脂層形成用組合物X加熱硬化,而於硬化反應時,矽酮樹脂與支持基板12進行化學鍵結,又,藉由投錨效應,矽酮樹脂層與支持基板12結合而接著。藉由該等之作用,將矽酮樹脂層牢固地固定於支持基板12上。再者,於由樹脂層形成用組合物形成包含矽酮樹脂 以外之樹脂之樹脂層之情形時,亦可以與上述相同之方法形成固定於支持基板12上之樹脂層14。 By heat-hardening the composition for forming a resin layer X, the fluorenone resin is chemically bonded to the support substrate 12 during the curing reaction, and the fluorenone resin layer is bonded to the support substrate 12 by the anchoring effect. By the action of these, the fluorenone resin layer is firmly fixed to the support substrate 12. Further, the formation of the composition for forming a resin layer includes an fluorenone resin In the case of a resin layer other than the resin, the resin layer 14 fixed to the support substrate 12 may be formed in the same manner as described above.
再者,於支持基板12表面上形成成為樹脂層14之樹脂層形成用組合物層,繼而使該樹脂層形成用組合物層硬化而形成固定於支持基板12上之樹脂層14之方法中,就形成之樹脂層14之平坦性更加優異之方面而言,較佳為於形成樹脂層形成用組合物層後且硬化前,靜置具備樹脂層形成用組合物層之支持基板12。藉由靜置特定時間,可提高樹脂層形成用組合物層之表面之平坦性,並且去除樹脂層形成用組合物層所含之揮發成分,進一步抑制硬化時樹脂層14之表面粗糙。 Further, a resin layer forming composition layer to be the resin layer 14 is formed on the surface of the support substrate 12, and then the resin layer forming composition layer is cured to form a resin layer 14 fixed to the support substrate 12, In view of the fact that the flatness of the resin layer 14 to be formed is more excellent, it is preferable to leave the support substrate 12 including the resin layer-forming composition layer after the formation of the resin layer-forming composition layer and before curing. By allowing to stand for a specific period of time, the flatness of the surface of the composition layer for forming a resin layer can be improved, and the volatile component contained in the composition layer for forming a resin layer can be removed, and the surface roughness of the resin layer 14 at the time of curing can be further suppressed.
靜置時之溫度並無特別限制,只要於低於硬化時之加熱條件之溫度的溫度下靜置即可,較佳為0℃~100℃,更佳為0℃~室溫(25℃左右)。 The temperature at the time of standing is not particularly limited, and it may be left at a temperature lower than the temperature of the heating condition at the time of hardening, preferably from 0 ° C to 100 ° C, more preferably from 0 ° C to room temperature (about 25 ° C). ).
靜置時間並無特別限制,就樹脂層14之平坦性及生產性兩者之平衡更加優異之方面而言,較佳為30秒~1小時,更佳為1分鐘~10分鐘。 The standing time is not particularly limited, and is preferably from 30 seconds to 1 hour, more preferably from 1 minute to 10 minutes, in terms of the balance between the flatness and the productivity of the resin layer 14.
又,亦可視需要而於減壓下進行靜置。減壓之條件並無特別限制,就樹脂層14之平坦性及操作之效率性兩者之平衡更加優異之方面而言,較佳為1~1000Pa,更佳為10~1000Pa。 Further, it may be allowed to stand under reduced pressure as needed. The condition of the pressure reduction is not particularly limited, and is preferably from 1 to 1,000 Pa, more preferably from 10 to 1,000 Pa, in terms of the balance between the flatness of the resin layer 14 and the efficiency of the operation.
玻璃基板16之第1主面16a與樹脂層密接,於與樹脂層14側為相反側之第2主面16b上設置有電子裝置用構件。 The first main surface 16a of the glass substrate 16 is in close contact with the resin layer, and the electronic device member is provided on the second main surface 16b on the side opposite to the resin layer 14 side.
玻璃基板16之種類可為通常者,例如可列舉LCD、OLED等顯示裝置用之玻璃基板等。玻璃基板16之耐化學品性、耐透濕性優異,並且熱收縮率較低。作為熱收縮率之指標,係使用JIS R 3102(1995年修正)所規定之線膨脹係數。 The type of the glass substrate 16 may be a normal one, and examples thereof include a glass substrate for a display device such as an LCD or an OLED. The glass substrate 16 is excellent in chemical resistance and moisture permeability resistance, and has a low heat shrinkage rate. As an index of the heat shrinkage rate, the coefficient of linear expansion prescribed by JIS R 3102 (1995 Revision) is used.
若玻璃基板16之線膨脹係數較大,則由於構件形成步驟S106多 數情況下伴有加熱處理,故容易產生各種不良狀況。例如,於在玻璃基板16上形成TFT(Thin Film Transistor,薄膜電晶體)之情形時,若將加熱下形成有TFT之玻璃基板16冷卻,則有因玻璃基板16之熱收縮而使TFT之位置偏移過大之虞。 If the linear expansion coefficient of the glass substrate 16 is large, since the member forming step S106 is large In some cases, there is a heat treatment, so that various disadvantages are likely to occur. For example, when a TFT (Thin Film Transistor) is formed on the glass substrate 16, when the glass substrate 16 on which the TFT is formed under heating is cooled, the position of the TFT is caused by thermal contraction of the glass substrate 16. The offset is too large.
玻璃基板16係將玻璃原料熔融,將熔融玻璃成形為板狀而獲得。此種成形方法可為通常者,例如可使用浮式法、熔融法、流孔下引法、富可法、魯伯法等。又,尤其是厚度較薄之玻璃基板16可藉由將暫時成形為板狀之玻璃加熱至可成形溫度,並利用延伸等手段進行拉伸而使其變薄之方法(再曳引法)成形而獲得。 The glass substrate 16 is obtained by melting a glass raw material and molding the molten glass into a plate shape. Such a molding method may be a usual one, and for example, a float method, a melting method, a flow down method, a rich method, a Luber method, or the like may be used. Further, in particular, the glass substrate 16 having a small thickness can be formed by heating a glass which is temporarily formed into a plate shape to a moldable temperature, and stretching it by means of stretching or the like to be thinned (re-draw method). And get.
玻璃基板16之玻璃並無特別限定,較佳為無鹼硼矽酸玻璃、硼矽酸玻璃、鈉鈣玻璃、高矽玻璃、其他以氧化矽為主要成分之氧化物系玻璃。作為氧化物系玻璃,較佳為利用氧化物換算而得之氧化矽之含量為40~90質量%之玻璃。 The glass of the glass substrate 16 is not particularly limited, and is preferably an alkali-free borosilicate glass, a borosilicate glass, a soda lime glass, a sorghum glass, or another oxide-based glass containing cerium oxide as a main component. The oxide-based glass is preferably a glass having a content of cerium oxide of 40 to 90% by mass in terms of oxide.
作為玻璃基板16之玻璃,可採用適合電子裝置用構件之種類或其製造步驟之玻璃。例如,由於鹼金屬成分之溶出容易對液晶造成影響,故而液晶面板用之玻璃基板包含實質上不含鹼金屬成分之玻璃(無鹼玻璃)(但通常含有鹼土類金屬成分)。如上所述,玻璃基板之玻璃可基於應用之裝置之種類及其製造步驟而適當選擇。 As the glass of the glass substrate 16, a glass suitable for the type of the member for an electronic device or a manufacturing step thereof can be used. For example, since the elution of the alkali metal component is likely to affect the liquid crystal, the glass substrate for a liquid crystal panel contains glass (alkali-free glass) which does not substantially contain an alkali metal component (but usually contains an alkaline earth metal component). As described above, the glass of the glass substrate can be appropriately selected depending on the kind of the apparatus to be applied and the manufacturing steps thereof.
作為玻璃基板16之玻璃,就熱膨脹率較小之方面而言,可較佳地列舉以氧化物基準之質量百分率表示,含有下述成分之無鹼玻璃:SiO2:50~66%、Al2O3:10.5~24%、B2O3:0~12%、MgO:0~8%、CaO:0~14.5%、SrO:0~24%、 BaO:0~13.5%、MgO+CaO+SrO+BaO:9~29.5%、及ZrO2:0~5%。 As the glass of the glass substrate 16, in terms of a small thermal expansion coefficient, an alkali-free glass containing SiO 2 : 50 to 66%, Al 2 represented by a mass percentage based on an oxide is preferably used. O 3 : 10.5~24%, B 2 O 3 : 0~12%, MgO: 0~8%, CaO: 0~14.5%, SrO: 0~24%, BaO: 0~13.5%, MgO+CaO+ SrO+BaO: 9~29.5%, and ZrO 2 : 0~5%.
又,作為玻璃基板16之玻璃,就熱膨脹率較小之方面而言,亦可較佳地列舉以氧化物基準之質量百分率表示,含有下述成分之無鹼玻璃:SiO2:58~66%、Al2O3:15~22%、B2O3:5~12%、MgO:0~8%、CaO:0~9%、SrO:3~12.5%、BaO:0~2%、及MgO+CaO+SrO+BaO:9~18%。 Further, as the glass of the glass substrate 16, in terms of a small thermal expansion coefficient, an alkali-free glass containing the following components, which is represented by a mass percentage based on an oxide, is preferably used: SiO 2 : 58 to 66% , Al 2 O 3 : 15 to 22%, B 2 O 3 : 5 to 12%, MgO: 0 to 8%, CaO: 0 to 9%, SrO: 3 to 12.5%, BaO: 0 to 2%, and MgO+CaO+SrO+BaO: 9~18%.
就玻璃基板16之薄型化及/或輕量化之觀點而言,玻璃基板16之厚度為0.3mm以下,進而較佳為0.15mm以下。於超過0.3mm之情形時,不滿足玻璃基板16之薄型化及/或輕量化之要求。於為0.3mm以下之情形時,可賦予玻璃基板16良好之軟性。於為0.15mm以下之情形時,可將玻璃基板16捲取為輥狀。 The thickness of the glass substrate 16 is 0.3 mm or less, and more preferably 0.15 mm or less from the viewpoint of thinning and/or weight reduction of the glass substrate 16. When it exceeds 0.3 mm, the requirements for thinning and/or weight reduction of the glass substrate 16 are not satisfied. When it is 0.3 mm or less, the glass substrate 16 can be provided with good softness. In the case of 0.15 mm or less, the glass substrate 16 can be wound into a roll shape.
又,就玻璃基板16之製造較容易、玻璃基板16之操作較容易等理由而言,玻璃基板16之厚度較佳為0.03mm以上。 Further, the thickness of the glass substrate 16 is preferably 0.03 mm or more for the reason that the production of the glass substrate 16 is easy and the operation of the glass substrate 16 is easy.
再者,玻璃基板16亦可包含兩層以上,於該情形時,形成各層之材料可為同種材料,亦可為不同種類之材料。又,於該情形時,「玻璃基板16之厚度」意指所有層之合計之厚度。 Furthermore, the glass substrate 16 may also comprise two or more layers. In this case, the materials forming the layers may be the same material or different types of materials. Moreover, in this case, "the thickness of the glass substrate 16" means the total thickness of all the layers.
本步驟S102中,準備上述附樹脂層之支持基板18與玻璃基板 16,以上述附樹脂層之支持基板18之樹脂層表面14a與玻璃基板16之第1主面16a作為積層面而將兩者密接積層。樹脂層14之積層面具有易剝離性,可藉由通常之重疊與加壓而容易地以可剝離之方式密接。 In the step S102, the support substrate 18 with the resin layer and the glass substrate are prepared. 16. The resin layer surface 14a of the support substrate 18 with the resin layer and the first main surface 16a of the glass substrate 16 are laminated as a layer. The layer of the resin layer 14 has an easy peeling property, and can be easily adhered in a peelable manner by usual overlapping and pressurization.
具體而言,例如可列舉於常壓環境下,在易剝離性之樹脂層14之表面14a重疊玻璃基板16後,使用輥或壓機將樹脂層14與玻璃基板16壓接之方法。藉由利用輥或壓機進行壓接,而使樹脂層14與玻璃基板16進一步密接,故而較佳。又,藉由利用輥或壓機之壓接,可相對容易地去除混入樹脂層14與玻璃基板16之間之氣泡。 Specifically, for example, a method in which the resin substrate 14 and the glass substrate 16 are pressure-bonded by a roll or a press after the glass substrate 16 is superposed on the surface 14a of the easily peelable resin layer 14 in a normal pressure environment. It is preferable to bond the resin layer 14 to the glass substrate 16 by pressure bonding using a roll or a press. Moreover, the air bubbles mixed between the resin layer 14 and the glass substrate 16 can be relatively easily removed by pressure bonding using a roll or a press.
若藉由真空層壓法或真空加壓法進行壓接,則由於可抑制氣泡之混入或確保良好之密接,故而更佳。藉由於真空下進行壓接,亦具有即便於殘留微小之氣泡之情形時,亦不會因加熱而使氣泡成長,不易導致玻璃基板16之應變缺陷的優點。 When the pressure bonding is carried out by a vacuum lamination method or a vacuum press method, it is more preferable because the incorporation of air bubbles can be suppressed or a good adhesion can be ensured. By the pressure bonding under vacuum, even when minute bubbles are left, the bubbles are not grown by heating, and the strain defects of the glass substrate 16 are less likely to occur.
於使樹脂層14以可剝離之方式密接於玻璃基板16之第1主面16a上時,較佳為充分清洗樹脂層14及玻璃基板16之相互接觸之側之面,於潔淨度較高之環境下進行積層。即便於樹脂層14與玻璃基板16之間混入異物,亦由於樹脂層14會進行變形,故而不存在對玻璃基板16之表面之平坦性造成影響之情況,但潔淨度越高,其平坦性越良好,故而較佳。 When the resin layer 14 is detachably adhered to the first main surface 16a of the glass substrate 16, it is preferable to sufficiently clean the side of the resin layer 14 and the glass substrate 16 which are in contact with each other, and the degree of cleanliness is high. Layering under the environment. That is, it is easy to mix foreign matter between the resin layer 14 and the glass substrate 16, and since the resin layer 14 is deformed, there is no possibility of affecting the flatness of the surface of the glass substrate 16, but the higher the cleanliness, the more flatness is. Good, so it is better.
藉由上述積層步驟S102而形成之玻璃積層體10可用於各種用途,例如可列舉製造下述顯示裝置用面板、PV、薄膜二次電池、表面形成有電路之半導體晶圓等電子零件之用途等。再者,該用途中,玻璃積層體10多數情況下暴露於高溫條件(例如320℃以上)下(例如1小時以上)。 The glass laminate 10 formed by the laminating step S102 can be used for various purposes, and examples thereof include the use of a panel for a display device, a PV, a thin film secondary battery, and an electronic component such as a semiconductor wafer having a circuit formed thereon. . Further, in this application, the glass laminate 10 is often exposed to high temperature conditions (for example, 320 ° C or higher) (for example, 1 hour or longer).
此處,所謂顯示裝置用面板,包括LCD、OLED、電子紙、電漿顯示面板、場發射面板、量子點LED面板、MEMS(Micro Electro Mechanical Systems,微機電系統)快門面板等。 Here, the panel for a display device includes an LCD, an OLED, an electronic paper, a plasma display panel, a field emission panel, a quantum dot LED panel, a MEMS (Micro Electro Mechanical Systems) shutter panel, and the like.
研磨步驟S104係研磨積層步驟S102所獲得之玻璃積層體10中之玻璃基板16之第2主面16b的步驟。藉由設置本步驟S104,可去除玻璃基板16之第2主面16b之微小之凹凸及瑕疵,可提高形成電子裝置用構件之面之平坦性。藉此,可提高作為製品之電子裝置之可靠性。此效果對於本發明所使用之厚度為0.3mm以下之玻璃基板較為明顯。其原因在於,厚度0.3mm以下之玻璃基板難以單獨研磨,難以於製成玻璃積層體10前預先研磨。 The polishing step S104 is a step of polishing the second main surface 16b of the glass substrate 16 in the glass laminate 10 obtained in the step S102. By providing this step S104, minute irregularities and flaws of the second main surface 16b of the glass substrate 16 can be removed, and the flatness of the surface on which the electronic device member is formed can be improved. Thereby, the reliability of the electronic device as a product can be improved. This effect is apparent for the glass substrate having a thickness of 0.3 mm or less used in the present invention. This is because the glass substrate having a thickness of 0.3 mm or less is difficult to be polished alone, and it is difficult to perform pre-polishing before the glass laminate 10 is formed.
研磨之方法並無特別限制,可採用公知之方法,可使用機械性研磨(物理研磨)或化學性研磨(化學研磨)。作為機械性研磨,可使用吹送陶瓷研磨粒進行研磨之噴砂方法、使用研磨片或磨石之研磨、並用研磨粒與化學溶劑之化學機械研磨(CMP,Chemical Mechanical Polishing)法等。 The method of polishing is not particularly limited, and a known method can be employed, and mechanical polishing (physical polishing) or chemical polishing (chemical polishing) can be used. As the mechanical polishing, a sand blasting method in which ceramic abrasive grains are blown, a polishing using a polishing sheet or a grindstone, and a chemical mechanical polishing (CMP) method using abrasive grains and a chemical solvent can be used.
又,作為化學研磨(有時亦稱作濕式蝕刻),可利用使用化學藥品研磨玻璃基板之表面之方法。 Further, as chemical polishing (sometimes referred to as wet etching), a method of polishing the surface of a glass substrate using a chemical can be used.
其中,就研磨後之玻璃基板16之第2主面16b之平坦性及清潔度更高之方面而言,較佳為化學機械研磨。再者,作為化學機械研磨所使用之研磨粒,可使用氧化鈰等公知之研磨粒。 Among them, chemical mechanical polishing is preferred in terms of higher flatness and cleanliness of the second main surface 16b of the polished glass substrate 16. Further, as the abrasive grains used for chemical mechanical polishing, known abrasive grains such as cerium oxide can be used.
藉由歷經上述積層步驟S102及研磨步驟S104,可製造包含經研磨之玻璃基板之玻璃積層體。 By the above-described lamination step S102 and polishing step S104, a glass laminate including a polished glass substrate can be produced.
構件形成步驟S106係於在上述研磨步驟S104中經研磨之玻璃基板16之第2主面16b上形成電子裝置用構件之步驟。 The member forming step S106 is a step of forming a member for an electronic device on the second main surface 16b of the glass substrate 16 polished in the polishing step S104.
圖3係本步驟S106所獲得之附電子裝置用構件之積層體之一例之模式剖面圖。附電子裝置用構件之積層體20包含上述玻璃積層體10與電子裝置用構件22。 Fig. 3 is a schematic cross-sectional view showing an example of a laminate of members for an electronic device obtained in the step S106. The laminated body 20 of the member for electronic devices includes the glass laminate 10 and the electronic device member 22.
首先,對本步驟S106所使用之電子裝置用構件進行詳細敍述,其後對步驟S106之程序進行詳細敍述。 First, the electronic device member used in the step S106 will be described in detail, and then the procedure of the step S106 will be described in detail.
電子裝置用構件22係形成於玻璃積層體10中之玻璃基板16之第2主面16b上,並構成電子裝置之至少一部分之構件。更具體而言,作為電子裝置用構件22,可列舉用於顯示裝置用面板、太陽電池、薄膜二次電池、表面形成有電路之半導體晶圓等電子零件等之構件。作為顯示裝置用面板,包括有機EL面板、電漿顯示面板、場發射面板等。 The electronic device member 22 is formed on the second main surface 16b of the glass substrate 16 in the glass laminate 10, and constitutes at least a part of the electronic device. More specifically, the electronic device member 22 includes members such as a display device panel, a solar cell, a thin film secondary battery, and an electronic component such as a semiconductor wafer on which a circuit is formed. The panel for a display device includes an organic EL panel, a plasma display panel, a field emission panel, and the like.
例如,作為太陽電池用構件,於矽型中,可列舉正極之氧化錫等之透明電極、以p層/i層/n層所表示之矽層、及負極之金屬等,此外,可列舉對應於化合物型、色素增感型、量子點型等之各種構件等。 For example, as a member for a solar cell, a transparent electrode such as a tin oxide of a positive electrode, a ruthenium layer represented by a p layer/i layer/n layer, a metal of a negative electrode, and the like may be mentioned. It is used in various types such as compound type, dye sensitization type, and quantum dot type.
又,作為薄膜二次電池用構件,於鋰離子型中,可列舉正極及負極之金屬或金屬氧化物等之透明電極、電解質層之鋰化合物、集電層之金屬、作為密封層之樹脂等,此外,可列舉對應於氫化鎳型、聚合物型、陶瓷電解質型等之各種構件等。 Further, examples of the lithium ion type include a transparent electrode such as a metal or a metal oxide of a positive electrode and a negative electrode, a lithium compound of an electrolyte layer, a metal of a collector layer, a resin as a sealing layer, and the like. Further, various members such as a nickel hydride type, a polymer type, and a ceramic electrolyte type may be mentioned.
又,作為電子零件用構件,於CCD(Charge Coupled Device,電荷耦合裝置)或CMOS(Complementary Metal Oxide Semiconductor,互補金屬氧化物半導體)中,可列舉導電部之金屬、絕緣部之氧化矽或氮化矽等,此外,可列舉對應於壓力感測器、加速度感測器等各種感測器或剛性印刷基板、軟性印刷基板、剛性軟性印刷基板等之各種構件等。 Further, as a member for an electronic component, in a CCD (Charge Coupled Device) or a CMOS (Complementary Metal Oxide Semiconductor), a metal of a conductive portion, yttrium oxide or nitridation of an insulating portion may be mentioned. In addition, various members such as various sensors such as a pressure sensor and an acceleration sensor, or a rigid printed circuit board, a flexible printed circuit board, and a rigid flexible printed circuit board can be cited.
上述附電子裝置用構件之積層體20之製造方法並無特別限定,可根據電子裝置用構件之構成構件之種類,藉由先前公知之方法,於 積層體10之玻璃基板16之第2主面16b表面上形成電子裝置用構件22。 The method for producing the laminated body 20 of the member for an electronic device is not particularly limited, and may be a conventionally known method depending on the type of the constituent member of the member for an electronic device. The electronic device member 22 is formed on the surface of the second main surface 16b of the glass substrate 16 of the laminated body 10.
再者,電子裝置用構件22亦可不為於玻璃基板16之第2主面16b上最終形成之所有構件(以下稱為「全部構件」),而為全部構件之一部分(以下稱為「部分構件」)。亦可於其後之步驟中將自樹脂層14剝離之附部分構件之玻璃基板製成附全部構件之玻璃基板(相當於下述電子裝置)。 In addition, the electronic device member 22 may not be all the members (hereinafter referred to as "all members") finally formed on the second main surface 16b of the glass substrate 16, but may be one part of all members (hereinafter referred to as "partial members" "). In the subsequent step, the glass substrate with the part of the member peeled off from the resin layer 14 may be formed into a glass substrate (corresponding to the following electronic device) with all the members.
又,可於自樹脂層14剝離之附全部構件之玻璃基板上,於其剝離面(第1主面16a)上形成其他電子裝置用構件。又,亦可組裝附全部構件之積層體,其後,自附全部構件之積層體剝離附樹脂層之支持基板而製造電子裝置。進而,亦可使用2片附全部構件之積層體組裝電子裝置,其後,自附全部構件之積層體剝離2片附樹脂層之支持基板而製造電子裝置。 Further, other electronic device members can be formed on the peeling surface (first main surface 16a) of the glass substrate with all the members peeled off from the resin layer 14. Further, a laminate having all the members may be assembled, and thereafter, the laminate of the resin layer is peeled off from the laminate of all the members to manufacture an electronic device. Further, the electronic device can be assembled by using two laminated bodies with all the members, and thereafter, the laminated substrate with the resin layers is peeled off from the laminated body of all the members to manufacture an electronic device.
例如,若以製造OLED之情形為例,為了於玻璃積層體10之玻璃基板16之與樹脂層14側為相反側之表面上(相當於玻璃基板16之第2主面16b)形成有機EL結構體,進行如下各種層形成操作或處理:形成透明電極,進而於形成有透明電極之面上蒸鍍電洞注入層、電洞傳輸層、發光層、電子傳輸層等,形成背面電極,使用密封板密封等。作為該等層形成操作或處理,具體而言,例如可列舉成膜處理、蒸鍍處理、密封板之接著處理等。 For example, in the case of manufacturing an OLED, an organic EL structure is formed on the surface opposite to the resin layer 14 side of the glass substrate 16 of the glass laminate 10 (corresponding to the second main surface 16b of the glass substrate 16). The body is subjected to various layer forming operations or processes of forming a transparent electrode, and further depositing a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and the like on the surface on which the transparent electrode is formed to form a back electrode, using a seal Plate sealing, etc. Specific examples of the layer forming operation or treatment include a film forming treatment, a vapor deposition treatment, and a subsequent treatment of a sealing plate.
又,例如TFT-LCD之製造方法包括:TFT形成步驟,於平面化後之玻璃積層體10之玻璃基板16之第2主面16b上,使用抗蝕劑溶液,於藉由CVD(Chemical Vapor Deposition,化學氣相沈積)法及濺鍍法等通常之成膜法而形成之金屬膜及金屬氧化膜等上形成圖案而形成薄膜電晶體(TFT);CF(Color Filter,彩色濾光片)形成步驟,於另一平面化後之玻璃積層體10之玻璃基板16之第2主面16b上,將抗蝕劑溶液用於圖案形成而形成彩色濾光片(CF);貼合步驟,將附TFT之裝置基板與 附CF之裝置基板積層等各種步驟。 Further, for example, a method of manufacturing a TFT-LCD includes a TFT forming step of using a resist solution on the second main surface 16b of the glass substrate 16 of the planarized glass laminate 10 by CVD (Chemical Vapor Deposition) a thin film transistor (TFT) is formed on a metal film or a metal oxide film formed by a usual film formation method such as a chemical vapor deposition method or a sputtering method; and CF (Color Filter) is formed. Step, on the second main surface 16b of the glass substrate 16 of the other planarized glass laminate 10, a resist solution is used for pattern formation to form a color filter (CF); and a bonding step is attached TFT device substrate and Various steps such as lamination of the device substrate of CF are attached.
TFT形成步驟或CF形成步驟中,係利用周知之光微影技術或蝕刻技術等,於玻璃基板16之第2主面16b上形成TFT或CF。此時,使用抗蝕劑溶液作為圖案形成用之塗佈液。 In the TFT forming step or the CF forming step, TFT or CF is formed on the second main surface 16b of the glass substrate 16 by a known photolithography technique or etching technique. At this time, a resist solution is used as a coating liquid for pattern formation.
再者,於形成TFT或CF前,亦可視需要清洗玻璃基板16之第2主面16b。作為清洗方法,可使用周知之乾式清洗或濕式清洗。 Further, before forming the TFT or CF, the second main surface 16b of the glass substrate 16 may be cleaned as needed. As the cleaning method, a well-known dry cleaning or wet cleaning can be used.
貼合步驟中,於附TFT之積層體與附CF之積層體之間注入液晶材料而積層。作為注入液晶材料之方法,例如有減壓注入法、滴加注入法。 In the bonding step, a liquid crystal material is injected between the laminated body with the TFT and the laminated body with the CF to laminate. As a method of injecting a liquid crystal material, for example, a pressure reduction injection method or a dropping injection method is available.
分離步驟S108係自上述構件形成步驟S106所獲得之附電子裝置用構件之積層體20將積層有電子裝置用構件22之玻璃基板16與附樹脂層之支持基板18分離,獲得包含電子裝置用構件22及玻璃基板16之電子裝置24(附電子裝置用構件之玻璃基板)之步驟。 In the separation step S108, the glass substrate 16 on which the electronic device member 22 is laminated is separated from the support substrate 18 on which the resin layer is laminated, from the laminate 20 of the member for electronic device obtained in the above-described member forming step S106, and the member for electronic device is obtained. 22 and the steps of the electronic device 24 of the glass substrate 16 (the glass substrate with the member for the electronic device).
於剝離時之玻璃基板16上之電子裝置用構件22為所需之全部構成構件之組成之一部分之情形時,亦可於分離後,於玻璃基板16上形成其餘之構成構件。 In the case where the electronic device member 22 on the glass substrate 16 at the time of peeling is a part of all the constituent members required, the remaining constituent members may be formed on the glass substrate 16 after separation.
將玻璃基板16之第1主面16a與樹脂層14之表面14a剝離之方法並無特別限定。具體而言,例如可於玻璃基板16與樹脂層14之界面插入鋒利之刀狀物而添加剝離之起點,其後吹送水與壓縮空氣之混合流體而剝離。較佳為以附電子裝置用構件之積層體20之支持基板12成為上側、電子裝置用構件22側成為下側之方式設置於壓盤上,使電子裝置用構件22側真空吸附於壓盤上(雙面積層有支持基板之情形時係依序進行),於該狀態下,首先將刀具插入玻璃基板16-樹脂層14界面。並且,其後利用複數片真空吸盤吸附支持基板12側,自插入刀具之部位附近起依序使真空吸盤上升。如此,於樹脂層14與玻璃基板16之界面 形成空氣層,該空氣層向界面整面擴散,可容易地剝離支持基板12。 The method of peeling the first main surface 16a of the glass substrate 16 from the surface 14a of the resin layer 14 is not specifically limited. Specifically, for example, a sharp blade can be inserted at the interface between the glass substrate 16 and the resin layer 14 to add a starting point of peeling, and then a mixed fluid of water and compressed air is blown and peeled off. It is preferable that the support substrate 12 of the laminated body 20 for the electronic device-attached member is placed on the upper side and the electronic device member 22 side is placed on the pressure plate, and the electronic device member 22 side is vacuum-adsorbed to the pressure plate. (In the case where the double-layer layer has a supporting substrate, it is sequentially performed), and in this state, the cutter is first inserted into the interface of the glass substrate 16 - the resin layer 14. Then, the side of the support substrate 12 is adsorbed by a plurality of vacuum chucks, and the vacuum chuck is sequentially raised from the vicinity of the portion where the cutter is inserted. Thus, the interface between the resin layer 14 and the glass substrate 16 An air layer is formed which diffuses toward the entire surface of the interface, and the support substrate 12 can be easily peeled off.
上述之製造方法較佳為用於行動電話或PDA(Personal Digital Assistant,個人數位助理)之類之移動終端所使用之小型顯示裝置之製造。顯示裝置主要為LCD或OLED,作為LCD,包括TN(Twisted Nematic,扭轉向列)型、STN(Super Twisted Nematic,超扭轉向列)型、FE(Field Emission,場發射)型、TFT型、MIM(Metal-Insulator-Metal,金屬-絕緣體-金屬)型、IPS(In-Plane Switching,橫向電場切換)型、VA(Vertical Alignment,垂直配向)型等。基本上而言於被動驅動型、主動驅動型之任一顯示裝置之情形均可應用。 The above manufacturing method is preferably a small display device used for a mobile terminal such as a mobile phone or a PDA (Personal Digital Assistant). The display device is mainly LCD or OLED, and as LCD, including TN (Twisted Nematic) type, STN (Super Twisted Nematic) type, FE (Field Emission) type, TFT type, MIM (Metal-Insulator-Metal, metal-insulator-metal) type, IPS (In-Plane Switching) type, VA (Vertical Alignment) type, and the like. Basically, it can be applied to any of the passive driving type and the active driving type.
以下藉由實施例等具體地說明本發明,但本發明並不受該等例所限定。 Hereinafter, the present invention will be specifically described by way of examples, but the present invention is not limited by the examples.
準備長350mm、寬300mm、板厚0.5mm之玻璃基板(「AN100」,線膨脹係數為38×10-7/℃之無鹼玻璃板,旭硝子股份有限公司製造)作為支持基板,進行純水清洗、UV(Ultraviolet,紫外線)清洗而淨化表面,獲得表面經潔淨化之支持基板。 A glass substrate ("AN100", an alkali-free glass plate with a linear expansion coefficient of 38 × 10 -7 /°C, manufactured by Asahi Glass Co., Ltd.) having a length of 350 mm, a width of 300 mm, and a thickness of 0.5 mm was prepared as a support substrate and cleaned with pure water. UV (Ultraviolet) cleaning to purify the surface, and obtain a support substrate with a clean surface.
繼而,將作為成分(A)之直鏈狀乙烯基甲基聚矽氧烷(「VDT-127」,25℃下之黏度為700-800cP(厘泊),Azmax製造,1mol有機聚矽氧烷中之乙烯基之mol%:0.325)與作為成分(B)之直鏈狀甲基氫聚矽氧烷(「HMS-301」,25℃下之黏度為25-35cP(厘泊),Azmax製造,1分子內之與矽原子鍵結之氫原子數:8個)以全部乙烯基與全部和矽原子鍵結之氫原子之莫耳比(氫原子/乙烯基)成為0.9之方式加以混合,並相對於該矽氧烷混合物100重量份,混合作為成分(C)之下述式(1)所表示之具有乙炔系不飽和基之矽化合物1重量份。 Then, as a component (A), a linear vinyl methyl polyoxyalkylene ("VDT-127", a viscosity at 25 ° C of 700-800 cP (centipoise), manufactured by Azmax, 1 mol of organopolyoxane The mol% of the vinyl group in the middle: 0.325) and the linear methyl hydrogen polyoxyalkylene as the component (B) ("HMS-301", the viscosity at 25 ° C is 25-35 cP (centipoise), manufactured by Azmax , the number of hydrogen atoms bonded to the ruthenium atom in one molecule: 8) is mixed in such a manner that the molar ratio (hydrogen atom/vinyl group) of all the vinyl groups bonded to the hydrogen atom bonded to the ruthenium atom is 0.9. One part by weight of the oxime compound having an acetylene-based unsaturated group represented by the following formula (1) as the component (C) is mixed with 100 parts by weight of the oxirane mixture.
HC≡C-C(CH3)2-O-Si(CH3)3 式(1) HC≡CC(CH 3 ) 2 -O-Si(CH 3 ) 3 (1)
繼而,相對於成分(A)、成分(B)與成分(C)之合計量,以由鉑換算計鉑金屬濃度達到100ppm之方式添加鉑系觸媒(Shin-Etsu Silicone股份有限公司製造,CAT-PL-56),獲得有機聚矽氧烷組合物之混合液。 Then, a platinum-based catalyst (manufactured by Shin-Etsu Silicone Co., Ltd., CAT) is added to the total amount of the component (A), the component (B), and the component (C) so that the platinum metal concentration is 100 ppm in terms of platinum. -PL-56), a mixture of organopolyoxane compositions is obtained.
利用模塗機將所獲得之混合液塗佈於此前潔淨化之支持基板之第1主面上(速度5mm/s、間隙150μm、塗佈壓95kPa)。其後,將塗佈於支持基板上之混合物(樹脂層形成用組合物層)於室溫下靜置10分鐘後,在大氣中以180℃加熱硬化60分鐘,於支持基板上形成長350mm×寬300mm、厚15μm之硬化矽酮樹脂層,獲得支持體A(附樹脂層之支持基板)。再者,硬化矽酮樹脂層之露出表面之濾波中心線起伏(WCA)為0.090μm。 The obtained mixed liquid was applied onto the first main surface of the previously cleaned support substrate by a die coater (speed: 5 mm/s, gap: 150 μm, coating pressure: 95 kPa). Thereafter, the mixture (the resin layer-forming composition layer) applied on the support substrate was allowed to stand at room temperature for 10 minutes, and then heat-hardened at 180 ° C for 60 minutes in the air to form a length of 350 mm on the support substrate. A hardened fluorenone resin layer having a width of 300 mm and a thickness of 15 μm was obtained to obtain a support A (a support substrate with a resin layer). Further, the filter center line undulation (W CA ) of the exposed surface of the hardened fluorenone resin layer was 0.090 μm.
另一方面,對長350mm、寬300mm、板厚0.2mm之玻璃基板(「AN100」,線膨脹係數為38×10-7/℃之無鹼玻璃板,旭硝子股份有限公司製造)進行純水清洗、UV清洗,將玻璃基板之表面潔淨化。 On the other hand, a glass substrate ("AN100", an alkali-free glass plate having a linear expansion coefficient of 38 × 10 -7 / ° C, manufactured by Asahi Glass Co., Ltd.) having a length of 350 mm, a width of 300 mm, and a thickness of 0.2 mm was subjected to pure water cleaning. UV cleaning cleans the surface of the glass substrate.
其後,將支持體A與玻璃基板對位後,使用真空加壓裝置,於室溫下使玻璃基板之第1主面與支持體A之硬化矽酮樹脂層之剝離性表面密接而獲得玻璃積層體。 Thereafter, after the support A and the glass substrate were aligned, the first main surface of the glass substrate and the peeling surface of the cured fluorenone resin layer of the support A were adhered to each other at room temperature using a vacuum press device to obtain a glass. Laminated body.
繼而,使用奧斯卡(Oscar)型研磨機研磨所獲得之玻璃積層體之玻璃基板之第2主面(露出表面)。作為研磨液,使用二氧化矽粒子之平均粒徑為0.08μm、二氧化矽粒子之含量為10質量%之膠體氧化矽研磨溶液。作為研磨墊,使用絨面革素材。關於研磨條件,研磨液之供給量為30ml/min,研磨壓力為20000Pa,下壓盤之轉速為80rpm,研磨時間為600秒。 Then, the second main surface (exposed surface) of the glass substrate of the obtained glass laminate was polished using an Oscar type grinder. As the polishing liquid, a colloidal cerium oxide polishing solution having an average particle diameter of cerium oxide particles of 0.08 μm and a content of cerium oxide particles of 10% by mass was used. As the polishing pad, suede material is used. Regarding the polishing conditions, the supply amount of the polishing liquid was 30 ml/min, the polishing pressure was 20000 Pa, the rotation speed of the lower platen was 80 rpm, and the polishing time was 600 seconds.
研磨結束後,使經實施研磨處理之玻璃積層體中之玻璃基板之第2主面真空吸附於壓盤上,其後於玻璃基板之4處角部中之1處角部上之玻璃基板與矽酮樹脂層之界面插入厚度0.1mm之不鏽鋼製刀具, 於玻璃基板與矽酮樹脂層之界面添加剝離之起點。然後,利用24個真空吸盤吸附支持基板後,自靠近插入刀具之角部之吸盤起依序上升。 此處,刀具之插入係一面自離子化器(KEYENCE公司製造)向該界面吹送除靜電性流體一面進行。繼而,一面自離子化器朝向形成之空隙持續吹送除靜電性流體,一面提拉真空吸盤。其結果,可於壓盤上將經實施研磨處理之玻璃基板自玻璃積層體分離。所獲得之玻璃基板之第2主面之濾波中心線起伏(WCA)為0.090μm。根據該結果,可確認對玻璃積層體之玻璃基板實施研磨處理後分離之玻璃基板具有優異之表面平坦性。將結果彙總示於表1。 After the completion of the polishing, the second main surface of the glass substrate in the glass laminate subjected to the polishing treatment is vacuum-adsorbed on the platen, and then the glass substrate on one of the four corners of the glass substrate is The interface of the fluorenone resin layer was inserted into a stainless steel cutter having a thickness of 0.1 mm, and the starting point of the peeling was added to the interface between the glass substrate and the fluorenone resin layer. Then, after the support substrate was suctioned by the 24 vacuum chucks, the chucks were sequentially raised from the chucks near the corners of the inserted cutter. Here, the inserting of the cutter is performed while blowing an electrostatic fluid from the ionizer (manufactured by KEYENCE Co., Ltd.) to the interface. Then, while the electrostaticizer is continuously blown from the ionizer toward the space formed, the vacuum chuck is pulled up. As a result, the glass substrate subjected to the polishing treatment can be separated from the glass laminate on the platen. The filter center line undulation (W CA ) of the second main surface of the obtained glass substrate was 0.090 μm. According to the results, it was confirmed that the glass substrate separated by the polishing treatment on the glass substrate of the glass laminate has excellent surface flatness. The results are summarized in Table 1.
相對於以與實施例1相同之程序獲得之有機聚矽氧烷組合物之混合液100重量份,添加43重量份之庚烷,製備混合溶液,利用模塗機(塗佈速度40mm/s、間隙140μm、塗佈壓50kPa)將所獲得之混合溶液塗佈於支持基板上,於室溫下靜置10分鐘後,在大氣中以180℃加熱硬化60分鐘而形成15μm之硬化矽酮樹脂層,除此以外,按照與實施例1相同之程序,製作玻璃積層體並進行研磨處理,進行經實施研磨處理之玻璃基板之分離。將各種結果彙總示於表1。再者,自玻璃積層體分離之玻璃基板之第2主面之濾波中心線起伏(WCA)與樹脂層之濾波中心線起伏為相同程度,為0.100μm以下。 A mixed solution was prepared by adding 43 parts by weight of heptane to 100 parts by weight of the mixed liquid of the organopolyoxane composition obtained in the same procedure as in Example 1, using a die coater (coating speed: 40 mm/s, The obtained mixed solution was applied onto a support substrate with a gap of 140 μm and a coating pressure of 50 kPa. The mixture was allowed to stand at room temperature for 10 minutes, and then heat-hardened at 180 ° C for 60 minutes in the atmosphere to form a 15 μm hardened fluorenone resin layer. In the same manner as in Example 1, a glass laminate was produced and subjected to a polishing treatment to separate the glass substrate subjected to the polishing treatment. The various results are summarized in Table 1. Further, the filter center line undulation (W CA ) of the second main surface of the glass substrate separated from the glass laminate is approximately the same as the filter center line of the resin layer, and is 0.100 μm or less.
利用模塗機將混合溶液塗佈於支持基板上後,於室溫下靜置30分鐘,其後在大氣中以180℃加熱硬化60分鐘而形成15μm之硬化矽酮樹脂層,除此以外,按照與實施例2相同之程序,製作玻璃積層體並進行研磨處理,進行經實施研磨處理之玻璃基板之分離。將各種結果彙總示於表1。再者,自玻璃積層體分離之玻璃基板之第2主面之濾波中心線起伏(WCA)與樹脂層之濾波中心線起伏為相同程度,為0.100 μm以下。 After the mixed solution was applied onto a support substrate by a die coater, it was allowed to stand at room temperature for 30 minutes, and then heat-hardened at 180 ° C for 60 minutes in the atmosphere to form a 15 μm hardened fluorenone resin layer. In the same procedure as in Example 2, a glass laminate was produced and subjected to a polishing treatment to separate the glass substrate subjected to the polishing treatment. The various results are summarized in Table 1. Further, the filter center line undulation (W CA ) of the second main surface of the glass substrate separated from the glass laminate is approximately the same as the filter center line of the resin layer, and is 0.100 μm or less.
相對於以與實施例1相同之程序獲得之有機聚矽氧烷組合物之混合液100重量份,添加100重量份之庚烷,製備混合溶液,利用模塗機(塗佈速度40mm/s、間隙100μm、塗佈壓28kPa)將所獲得之混合溶液塗佈於支持基板上,於室溫下靜置30秒後,在大氣中以180℃加熱硬化60分鐘而形成15μm之硬化矽酮樹脂層,除此以外,按照與實施例1相同之程序,製作玻璃積層體並進行研磨處理,進行經實施研磨處理之玻璃基板之分離。將各種結果彙總示於表1。再者,自玻璃積層體分離之玻璃基板之第2主面之濾波中心線起伏(WCA)與樹脂層之濾波中心線起伏為相同程度,為0.100μm以下。 100 parts by weight of heptane was added to 100 parts by weight of the mixed liquid of the organopolyoxane composition obtained in the same procedure as in Example 1, to prepare a mixed solution, using a die coater (coating speed: 40 mm/s, The obtained mixed solution was applied onto a support substrate with a gap of 100 μm and a coating pressure of 28 kPa. The mixture was allowed to stand at room temperature for 30 seconds, and then heat-hardened at 180 ° C for 60 minutes in the atmosphere to form a 15 μm hardened ketone resin layer. In the same manner as in Example 1, a glass laminate was produced and subjected to a polishing treatment to separate the glass substrate subjected to the polishing treatment. The various results are summarized in Table 1. Further, the filter center line undulation (W CA ) of the second main surface of the glass substrate separated from the glass laminate is approximately the same as the filter center line of the resin layer, and is 0.100 μm or less.
利用模塗機將混合溶液塗佈於支持基板上後,於室溫下靜置10分鐘,其後在大氣中以180℃加熱硬化60分鐘而形成15μm之硬化矽酮樹脂層,除此以外,按照與實施例4相同之程序,製作玻璃積層體並進行研磨處理,進行經實施研磨處理之玻璃基板之分離。將各種結果彙總示於表1。再者,自玻璃積層體分離之玻璃基板之第2主面之濾波中心線起伏(WCA)與樹脂層之濾波中心線起伏為相同程度,為0.100μm以下。 After the mixed solution was applied onto a support substrate by a die coater, it was allowed to stand at room temperature for 10 minutes, and then heat-hardened at 180 ° C for 60 minutes in the atmosphere to form a 15 μm hardened fluorenone resin layer. According to the same procedure as in Example 4, a glass laminate was produced and subjected to a polishing treatment to separate the glass substrate subjected to the polishing treatment. The various results are summarized in Table 1. Further, the filter center line undulation (W CA ) of the second main surface of the glass substrate separated from the glass laminate is approximately the same as the filter center line of the resin layer, and is 0.100 μm or less.
將模塗機之塗佈速度由40mm/s變更為80mm/s而形成8μm之硬化矽酮樹脂層,除此以外,按照與實施例4相同之程序,製作玻璃積層體並進行研磨處理,進行經實施研磨處理之玻璃基板之分離。將各種結果彙總示於表1。再者,自玻璃積層體分離之玻璃基板之第2主面之濾波中心線起伏(WCA)與樹脂層之濾波中心線起伏為相同程度,為0.100μm以下。 A glass laminate was produced and polished in the same manner as in Example 4 except that the coating speed of the die coater was changed from 40 mm/s to 80 mm/s to form a hardened fluorenone resin layer of 8 μm. Separation of the glass substrate subjected to the grinding treatment. The various results are summarized in Table 1. Further, the filter center line undulation (W CA ) of the second main surface of the glass substrate separated from the glass laminate is approximately the same as the filter center line of the resin layer, and is 0.100 μm or less.
利用模塗機將混合溶液塗佈於支持基板上後,於室溫下靜置10分鐘,其後在大氣中以180℃加熱硬化60分鐘而形成8μm之硬化矽酮樹脂層,除此以外,按照與實施例6相同之程序,製作玻璃積層體並進行研磨處理,進行經實施研磨處理之玻璃基板之分離。將各種結果彙總示於表1。再者,自玻璃積層體分離之玻璃基板之第2主面之濾波中心線起伏(WCA)與樹脂層之濾波中心線起伏為相同程度,為0.100μm以下。 After the mixed solution was applied onto a support substrate by a die coater, it was allowed to stand at room temperature for 10 minutes, and then heat-hardened at 180 ° C for 60 minutes in the atmosphere to form a hardened fluorenone resin layer of 8 μm. In the same procedure as in Example 6, a glass laminate was produced and subjected to a polishing treatment to separate the glass substrate subjected to the polishing treatment. The various results are summarized in Table 1. Further, the filter center line undulation (W CA ) of the second main surface of the glass substrate separated from the glass laminate is approximately the same as the filter center line of the resin layer, and is 0.100 μm or less.
相對於以與實施例1相同之程序獲得之有機聚矽氧烷組合物之混合液100重量份,添加150重量份之庚烷而製備混合溶液,利用模塗機(塗佈速度40mm/s、間隙100μm、塗佈壓20kPa)將將所獲得之混合溶液塗佈於支持基板上,於室溫下靜置30秒後,在大氣中以180℃加熱硬化60分鐘而形成15μm之硬化矽酮樹脂層,除此以外,按照與實施例1相同之程序,製作玻璃積層體並進行研磨處理,進行經實施研磨處理之玻璃基板之分離。將各種結果彙總示於表1。再者,自玻璃積層體分離之玻璃基板之第2主面之濾波中心線起伏(WCA)與樹脂層之濾波中心線起伏為相同程度,為0.100μm以下。 A mixed solution was prepared by adding 150 parts by weight of heptane to 100 parts by weight of the mixed solution of the organopolyoxane composition obtained in the same procedure as in Example 1, using a die coater (coating speed: 40 mm/s, The obtained mixed solution was applied to a support substrate at a gap of 100 μm and a coating pressure of 20 kPa. After standing at room temperature for 30 seconds, it was heat-hardened at 180 ° C for 60 minutes in the atmosphere to form a 15 μm hardened ketone resin. In the same manner as in Example 1, a glass laminate was produced and subjected to a polishing treatment to separate the glass substrate subjected to the polishing treatment. The various results are summarized in Table 1. Further, the filter center line undulation (W CA ) of the second main surface of the glass substrate separated from the glass laminate is approximately the same as the filter center line of the resin layer, and is 0.100 μm or less.
藉由模塗機將混合溶液塗佈於支持基板上後,於室溫下靜置10分鐘,其後在大氣中以180℃加熱硬化60分鐘而形成8μm之硬化矽酮樹脂層,除此以外,按照與實施例8相同之程序,製作玻璃積層體並進行研磨處理,進行經實施研磨處理之玻璃基板之分離。將各種結果彙總示於表1。再者,自玻璃積層體分離之玻璃基板之第2主面之濾波中心線起伏(WCA)與樹脂層之濾波中心線起伏為相同程度,為0.100μm以下。 After the mixed solution was applied onto a support substrate by a die coater, it was allowed to stand at room temperature for 10 minutes, and then heat-hardened at 180 ° C for 60 minutes in the air to form a hardened fluorenone resin layer of 8 μm. A glass laminate was produced and subjected to a polishing treatment in the same manner as in Example 8 to separate the glass substrate subjected to the polishing treatment. The various results are summarized in Table 1. Further, the filter center line undulation (W CA ) of the second main surface of the glass substrate separated from the glass laminate is approximately the same as the filter center line of the resin layer, and is 0.100 μm or less.
相對於以與實施例1相同之程序獲得之有機聚矽氧烷組合物之混合液100重量份,添加233重量份之庚烷而製備混合溶液,利用模塗機(塗佈速度40mm/s、間隙70μm、塗佈壓15kPa)將所獲得之混合溶液塗佈於支持基板上,於室溫下靜置30秒後,在大氣中以180℃加熱硬化60分鐘而形成15μm之硬化矽酮樹脂層,除此以外,按照與實施例1相同之程序,製作玻璃積層體並進行研磨處理,進行經實施研磨處理之玻璃基板之分離。將各種結果彙總示於表1。再者,自玻璃積層體分離之玻璃基板之第2主面之濾波中心線起伏(WCA)與樹脂層之濾波中心線起伏為相同程度,為0.100μm以下。 A mixed solution was prepared by adding 233 parts by weight of heptane to 100 parts by weight of the mixed liquid of the organopolyoxane composition obtained in the same procedure as in Example 1, using a die coater (coating speed: 40 mm/s, The obtained mixed solution was applied onto a support substrate at a gap of 70 μm and a coating pressure of 15 kPa. After standing at room temperature for 30 seconds, it was heat-hardened at 180 ° C for 60 minutes in the atmosphere to form a 15 μm hardened ketone resin layer. In the same manner as in Example 1, a glass laminate was produced and subjected to a polishing treatment to separate the glass substrate subjected to the polishing treatment. The various results are summarized in Table 1. Further, the filter center line undulation (W CA ) of the second main surface of the glass substrate separated from the glass laminate is approximately the same as the filter center line of the resin layer, and is 0.100 μm or less.
利用模塗機將混合溶液塗佈於支持基板上後,於室溫下靜置10分鐘,其後在大氣中以180℃加熱硬化60分鐘而形成15μm之硬化矽酮樹脂層,除此以外,按照與實施例10相同之程序,製作玻璃積層體並進行研磨處理,進行實施有研磨處理之玻璃基板之分離。將各種結果彙總示於表1。再者,自玻璃積層體分離之玻璃基板之第2主面之濾波中心線起伏(WCA)與樹脂層之濾波中心線起伏為相同程度,為0.100μm以下。 After the mixed solution was applied onto a support substrate by a die coater, it was allowed to stand at room temperature for 10 minutes, and then heat-hardened at 180 ° C for 60 minutes in the atmosphere to form a 15 μm hardened fluorenone resin layer. According to the same procedure as in Example 10, a glass laminate was produced and subjected to a polishing treatment to separate the glass substrate subjected to the polishing treatment. The various results are summarized in Table 1. Further, the filter center line undulation (W CA) of the second main surface of the glass substrate separated from the glass laminate is approximately the same as the filter center line of the resin layer, and is 0.100 μm or less.
利用模塗機將混合溶液塗佈於支持基板上後,於室溫下靜置30分鐘,其後在大氣中以180℃加熱硬化60分鐘而形成15μm之硬化矽酮樹脂層,除此以外,按照與實施例10相同之程序,製作玻璃積層體並進行研磨處理,進行經實施研磨處理之玻璃基板之分離。將各種結果彙總示於表1。再者,自玻璃積層體分離之玻璃基板之第2主面之濾波中心線起伏(WCA)與樹脂層之濾波中心線起伏為相同程度,為0.100μm以下。 After the mixed solution was applied onto a support substrate by a die coater, it was allowed to stand at room temperature for 30 minutes, and then heat-hardened at 180 ° C for 60 minutes in the atmosphere to form a 15 μm hardened fluorenone resin layer. According to the same procedure as in Example 10, a glass laminate was produced and subjected to a polishing treatment to separate the glass substrate subjected to the polishing treatment. The various results are summarized in Table 1. Further, the filter center line undulation (W CA ) of the second main surface of the glass substrate separated from the glass laminate is approximately the same as the filter center line of the resin layer, and is 0.100 μm or less.
利用模塗機將混合溶液塗佈於支持基板上後,不進行靜置而在大氣中以180℃加熱硬化60分鐘,形成15μm之硬化矽酮樹脂層,除此以外,按照與實施例1相同之程序,製作玻璃積層體並進行研磨處理,進行經實施研磨處理之玻璃基板之分離。將各種結果彙總示於表1。再者,自玻璃積層體分離之玻璃基板之第2主面之濾波中心線起伏(WCA)與樹脂層之濾波中心線起伏為相同程度,超過0.100μm。 After the mixed solution was applied onto a support substrate by a die coater, it was heat-hardened at 180 ° C for 60 minutes in the air without standing, and a hardened fluorenone resin layer of 15 μm was formed without being left in the same manner as in Example 1. In the procedure, a glass laminate is produced and polished, and the glass substrate subjected to the polishing treatment is separated. The various results are summarized in Table 1. Further, the filter center line undulation (W CA ) of the second main surface of the glass substrate separated from the glass laminate is approximately the same as the filter center line of the resin layer, and exceeds 0.100 μm.
利用模塗機將混合溶液塗佈於支持基板上後,不進行靜置而在大氣中以180℃加熱硬化60分鐘,形成15μm之硬化矽酮樹脂層,除此以外,按照與實施例2相同之程序,製作玻璃積層體並進行研磨處理,進行經實施研磨處理之玻璃基板之分離。將各種結果彙總示於表1。再者,自玻璃積層體分離之玻璃基板之第2主面之濾波中心線起伏(WCA)與樹脂層之濾波中心線起伏為相同程度,超過0.100μm。 After the mixed solution was applied onto a support substrate by a die coater, it was heat-hardened at 180 ° C for 60 minutes in the air without standing, and a hardened fluorenone resin layer of 15 μm was formed without being left in the same manner as in Example 2. In the procedure, a glass laminate is produced and polished, and the glass substrate subjected to the polishing treatment is separated. The various results are summarized in Table 1. Further, the filter center line undulation (W CA ) of the second main surface of the glass substrate separated from the glass laminate is approximately the same as the filter center line of the resin layer, and exceeds 0.100 μm.
以下之表1中,固形物成分濃度係指有機聚矽氧烷組合物之混合液中之固形物成分濃度(除溶劑以外之濃度),樹脂層WCA係指積層玻璃基板前之附樹脂層之支持基板中之樹脂層之露出表面的濾波中心線起伏。再者,濾波中心線起伏係依照JIS B-0610(1987)而測定。再者,將濾波起伏曲線之截斷值設為0.8mm,將測定長度設為40mm。 In the following Table 1, the solid content concentration refers to the solid content concentration (concentration other than the solvent) in the mixed liquid of the organopolyoxane composition, and the resin layer W CA refers to the resin layer before the laminated glass substrate. The filter center line of the exposed surface of the resin layer in the support substrate is undulated. Further, the filter center line undulation is measured in accordance with JIS B-0610 (1987). Further, the cutoff value of the filter fluctuation curve was set to 0.8 mm, and the measurement length was set to 40 mm.
如上述表1所示,樹脂層之濾波中心線起伏為0.100μm以下之實施例中,所獲得之玻璃基板之研磨處理面之濾波中心線起伏亦與樹脂層之值為大致相同程度,為0.100μm以下。根據該結果可確認,藉由本製造方法獲得之玻璃基板之表面之起伏較小,於在該玻璃基板上製作電路電極等器件之情形時,可進一步抑制如專利文獻2所述之電路電極之斷線、短路等問題之產生。 As shown in the above Table 1, in the embodiment in which the filter center line of the resin layer has an undulation of 0.100 μm or less, the filter center line undulation of the polished surface of the obtained glass substrate is substantially the same as the value of the resin layer, which is 0.100. Below μm. According to the results, it was confirmed that the surface of the glass substrate obtained by the present production method has a small fluctuation, and when a device such as a circuit electrode is formed on the glass substrate, the circuit electrode can be further suppressed as described in Patent Document 2. Problems such as lines and short circuits.
又,根據實施例2與3之比較等可確認,靜置時間越長樹脂層之平坦性越優異。 Moreover, it can be confirmed from the comparison of Examples 2 and 3 that the flatness of the resin layer is more excellent as the rest time is longer.
另一方面,比較例1及2係如專利文獻1所具體記載般未設靜置時間而製造樹脂層之態樣。於該等比較例中,可確認樹脂層之濾波中心線起伏超過0.100μm,結果所獲得之玻璃基板之研磨處理面之濾波中心線起伏亦超過0.100μm,不宜作為電子裝置製造用之玻璃基板。 On the other hand, in Comparative Examples 1 and 2, as described in Patent Document 1, the resin layer was produced without a standing time. In these comparative examples, it was confirmed that the filter center line of the resin layer fluctuated by more than 0.100 μm, and as a result, the filter center line of the obtained glass substrate obtained had a fluctuation of the center line of the filter of more than 0.100 μm, which is not suitable as a glass substrate for electronic device manufacturing.
於本例中,使用實施例1所製造之經實施研磨處理之玻璃積層體製作OLED。 In this example, an OLED was produced using the glass laminate produced by the polishing method produced in Example 1.
更具體而言,藉由濺鍍法於玻璃積層體中之經實施研磨處理之玻璃基板之第2主面上使鉬成膜,並藉由利用光微影法之蝕刻形成閘極電極。繼而,藉由電漿CVD法,於設置有閘極電極之玻璃基板之第2主面側進而依序成膜氮化矽、本徵非晶矽、n型非晶矽,然後藉由濺鍍法使鉬成膜,藉由利用光微影法之蝕刻形成閘極絕緣膜、半導體元件部及源極/汲極電極。繼而,藉由電漿CVD法,於玻璃基板之第2主 面側進而成膜氮化矽而形成鈍化層後,藉由濺鍍法使氧化銦錫成膜,並藉由利用光微影法之蝕刻形成像素電極。 More specifically, molybdenum is formed on the second main surface of the glass substrate subjected to the rubbing treatment in the glass laminate by sputtering, and the gate electrode is formed by etching by photolithography. Then, by the plasma CVD method, tantalum nitride, intrinsic amorphous germanium, and n-type amorphous germanium are sequentially formed on the second main surface side of the glass substrate provided with the gate electrode, and then by sputtering. The molybdenum is formed into a film, and the gate insulating film, the semiconductor element portion, and the source/drain electrodes are formed by etching by photolithography. Then, by the plasma CVD method, the second main glass substrate After the surface layer is further formed into a film of tantalum nitride to form a passivation layer, indium tin oxide is formed into a film by sputtering, and the pixel electrode is formed by etching by photolithography.
繼而,於玻璃基板之第2主面側進而藉由蒸鍍法依序成膜作為電洞注入層之4,4',4"-三(3-甲基苯基苯基胺基)三苯基胺、作為電洞傳輸層之雙[(N-萘基)-N-苯基]聯苯胺、作為發光層之於8-羥基喹啉鋁錯合物(Alq3)中混合有40體積%之2,6-雙[4-[N-(4-甲氧基苯基)-N-苯基]胺基苯乙烯基]萘-1,5-二甲腈(BSN-BCN)者、作為電子傳輸層之Alq3。繼而,藉由濺鍍法於玻璃基板之第2主面側使鋁成膜,藉由利用光微影法之蝕刻形成對向電極。繼而,於形成有對向電極之玻璃基板之第2主面上,介隔紫外線硬化型之接著層貼合另一片玻璃基板而密封。藉由上述程序獲得之玻璃基板上具有有機EL結構體之玻璃積層體相當於附電子裝置用構件之積層體。 Then, on the second main surface side of the glass substrate, 4,4',4"-tris(3-methylphenylphenylamino)triphenyl which is a hole injection layer is sequentially formed by a vapor deposition method. The base amine, bis[(N-naphthyl)-N-phenyl]benzidine as a hole transport layer, and 40% by volume of the 8-hydroxyquinoline aluminum complex (Alq 3 ) as a light-emitting layer 2,6-bis[4-[N-(4-methoxyphenyl)-N-phenyl]aminostyryl]naphthalene-1,5-dicarbonitrile (BSN-BCN) Alq 3 of the electron transport layer. Then, aluminum is formed on the second main surface side of the glass substrate by sputtering, and the counter electrode is formed by etching by photolithography. Then, the counter electrode is formed. The second main surface of the glass substrate is sealed by laminating another glass substrate via an ultraviolet curing type. The glass laminate having the organic EL structure on the glass substrate obtained by the above procedure corresponds to an electronic device. A laminate of components.
繼而,使所獲得之玻璃積層體之密封體側真空吸附於壓盤上後,於玻璃積層體之角部之玻璃基板與矽酮樹脂層之界面插入厚度0.1mm之不鏽鋼製刀具,將附樹脂層之支持基板自玻璃積層體分離,獲得OLED面板(相當於電子裝置;以下稱為面板A)。對製作之面板A連接IC(Integrated Circuit,積體電路)驅動器,於常溫常壓下驅動,結果於驅動區域內未觀察到顯示不均。又,於高溫高濕環境(80℃、80% RH)下驅動之情形時亦未觀察到顯示不均。 Then, after the sealed body side of the obtained glass laminate was vacuum-adsorbed on the platen, a stainless steel cutter having a thickness of 0.1 mm was inserted into the interface between the glass substrate and the fluorene-ketone resin layer at the corner of the glass laminate, and the resin was attached. The support substrate of the layer is separated from the glass laminate to obtain an OLED panel (corresponding to an electronic device; hereinafter referred to as panel A). The manufactured panel A connection IC (Integrated Circuit) driver was driven at normal temperature and normal pressure, and as a result, no display unevenness was observed in the driving region. Further, no display unevenness was observed in the case of driving in a high-temperature and high-humidity environment (80 ° C, 80% RH).
於本例中,使用實施例1所製造之經實施研磨處理之玻璃積層體製作LCD。 In this example, an LCD was produced using the glass laminate produced by the polishing method manufactured in Example 1.
準備2片玻璃積層體,首先,藉由濺鍍法於一方之玻璃積層體中之經實施研磨處理之玻璃基板之第2主面上使鉬成膜,藉由利用光微影法之蝕刻形成閘極電極。繼而,藉由電漿CVD法,於設置有閘極電極之玻璃基板之第2主面側進而依序成膜氮化矽、本徵非晶矽、n型非 晶矽,然後藉由濺鍍法使鉬成膜,並藉由利用光微影法之蝕刻形成閘極絕緣膜、半導體元件部及源極/汲極電極。繼而,藉由電漿CVD法於玻璃基板之第2主面側進而使氮化矽成膜而形成鈍化層後,藉由濺鍍法使氧化銦錫成膜,並藉由利用光微影法之蝕刻形成像素電極。繼而,藉由輥塗法於形成有像素電極之玻璃基板之第2主面上塗佈聚醯亞胺樹脂液,藉由熱硬化形成配向層,並進行研磨。將所獲得之玻璃積層體稱作玻璃積層體A1。 Two sheets of the glass laminate are prepared. First, molybdenum is formed on the second main surface of the glass substrate subjected to the polishing treatment in one of the glass laminates by sputtering, and is formed by etching by photolithography. Gate electrode. Then, by the plasma CVD method, a tantalum nitride, an intrinsic amorphous germanium, and an n-type non-crystalline film are sequentially formed on the second main surface side of the glass substrate provided with the gate electrode. The wafer is then formed into a film by sputtering, and a gate insulating film, a semiconductor element portion, and a source/drain electrode are formed by etching by photolithography. Then, a passivation layer is formed by forming a passivation layer on the second main surface side of the glass substrate by a plasma CVD method, and then indium tin oxide is formed by sputtering, and by photolithography. The etching forms a pixel electrode. Then, the polyimide film was applied onto the second main surface of the glass substrate on which the pixel electrode was formed by a roll coating method, and an alignment layer was formed by thermal curing and polished. The obtained glass laminate is referred to as a glass laminate A1.
繼而,藉由濺鍍法於另一玻璃積層體中之經實施研磨處理之玻璃基板之第2主面上使鉻成膜,並藉由利用光微影法之蝕刻形成遮光層。然後,於設置有遮光層之玻璃基板之第2主面側進而藉由模塗法塗佈彩色光阻,藉由光微影法及熱硬化形成彩色濾光片層。繼而,於玻璃基板之第2主面側進而藉由濺鍍法使氧化銦錫成膜,形成對向電極。然後,藉由模塗法於設置有對向電極之玻璃基板之第2主面上塗佈紫外線硬化樹脂液,並藉由光微影法及熱硬化形成柱狀間隔片。繼而,藉由輥塗法於形成有柱狀間隔片之玻璃基板之第2主面上塗佈聚醯亞胺樹脂液,藉由熱硬化形成配向層,並進行研磨。然後,藉由分注法於玻璃基板之第2主面側將密封用樹脂液描繪為框狀,並藉由分注法於框內滴加液晶後,使用上述玻璃積層體A1,將2片玻璃積層體之玻璃基板之第2主面側彼此貼合,藉由紫外線硬化及熱硬化而獲得具有LCD面板之積層體。以下將此處之具有LCD面板之積層體稱為附面板之積層體B2。 Then, chromium is formed on the second main surface of the glass substrate subjected to the polishing treatment in the other glass laminate by sputtering, and the light shielding layer is formed by etching by photolithography. Then, a color filter is applied by a die coating method on the second main surface side of the glass substrate provided with the light shielding layer, and a color filter layer is formed by photolithography and thermal curing. Then, indium tin oxide is further formed on the second main surface side of the glass substrate by sputtering to form a counter electrode. Then, an ultraviolet curable resin liquid is applied onto the second main surface of the glass substrate provided with the counter electrode by a die coating method, and a columnar spacer is formed by photolithography and thermal hardening. Then, the polyimide film was applied onto the second main surface of the glass substrate on which the columnar spacers were formed by a roll coating method, and the alignment layer was formed by thermal curing and polished. Then, the sealing resin liquid is drawn into a frame shape on the second main surface side of the glass substrate by a dispensing method, and liquid crystal is dropped in the frame by a dispensing method, and then the glass laminated body A1 is used to form two sheets. The second main surface side of the glass substrate of the glass laminate is bonded to each other, and a laminate having an LCD panel is obtained by ultraviolet curing and thermal curing. Hereinafter, the laminated body having the LCD panel will be referred to as a laminated body B2 of the attached panel.
繼而,以與實施例1相同之方式將兩面之附樹脂層之支持基板自附面板之積層體B2剝離,獲得包含形成有TFT陣列之基板及形成有彩色濾光片之基板的LCD面板B(相當於電子裝置)。 Then, in the same manner as in the first embodiment, the support substrate of the resin layer on both sides is peeled off from the laminated body B2 of the attached panel, and the LCD panel B including the substrate on which the TFT array is formed and the substrate on which the color filter is formed is obtained ( Equivalent to electronic devices).
對製作之LCD面板B連接IC驅動器,於常溫常壓下驅動,結果於驅動區域內未觀察到顯示不均。又,於高溫高濕環境(80℃、80% RH)下驅動之情形時亦未觀察到顯示不均。 The manufactured LCD panel B was connected to the IC driver and driven under normal temperature and normal pressure, and as a result, no display unevenness was observed in the driving region. Also, in a high temperature and high humidity environment (80 ° C, 80% No display unevenness was observed in the case of driving under RH).
按照比較例1之程序,製造經實施研磨處理之玻璃積層體。 The glass laminate subjected to the grinding treatment was produced in accordance with the procedure of Comparative Example 1.
繼而,使用所獲得之玻璃積層體,按照與實施例13相同之程序製作OLED面板。 Then, using the obtained glass laminate, an OLED panel was produced in the same manner as in Example 13.
對所製作之面板連接IC驅動器,於常溫常壓下驅動,結果雖然於驅動區域內未觀察到顯示不均,但若於高溫高濕環境(80℃、80% RH)下長時間持續連接,則出現部分顯示不均。 The panel-connected IC driver was driven at normal temperature and normal pressure. As a result, no unevenness was observed in the driving area, but if it was continuously connected for a long time in a high-temperature and high-humidity environment (80 ° C, 80% RH), A partial display is uneven.
本申請案係基於2012年1月18日提出申請之日本專利申請案2012-007927者,其內容係作為參照而引用於此。 The present application is based on Japanese Patent Application No. 2012-007927, filed on Jan.
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| CN (1) | CN103213371B (en) |
| TW (1) | TWI580566B (en) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6119567B2 (en) * | 2013-11-11 | 2017-04-26 | 旭硝子株式会社 | Method for manufacturing glass laminate and method for manufacturing electronic device |
| JP6136910B2 (en) * | 2013-12-17 | 2017-05-31 | 旭硝子株式会社 | Manufacturing method of glass laminate and manufacturing method of electronic device |
| JP6136909B2 (en) * | 2013-12-17 | 2017-05-31 | 旭硝子株式会社 | Manufacturing method of support substrate with resin layer, manufacturing method of glass laminate, manufacturing method of electronic device |
| JP2015223810A (en) * | 2014-05-29 | 2015-12-14 | 旭硝子株式会社 | Resin layer-equipped support substrate, and glass laminate |
| JP6361440B2 (en) * | 2014-05-30 | 2018-07-25 | Agc株式会社 | Glass laminate, method for producing the same, and method for producing electronic device |
| DE102014110268B4 (en) * | 2014-07-22 | 2017-11-02 | Osram Oled Gmbh | Method for producing an optoelectronic component |
| KR102270441B1 (en) * | 2014-09-25 | 2021-06-29 | 니폰 덴키 가라스 가부시키가이샤 | Supporting glass substrate and laminate using same |
| CN104282442B (en) * | 2014-10-17 | 2017-09-29 | 华中科技大学 | A kind of DSSC photocathode and its preparation method and application |
| WO2016104450A1 (en) * | 2014-12-26 | 2016-06-30 | 旭硝子株式会社 | Glass laminate, method for producing electronic device, method for producing glass laminate, and glass plate package |
| CN107428599B (en) * | 2015-02-02 | 2020-10-27 | 康宁股份有限公司 | Method for strengthening the edge of a laminated glass article and laminated glass article formed therefrom |
| JP6519221B2 (en) * | 2015-02-23 | 2019-05-29 | 日本電気硝子株式会社 | Glass substrate and laminate using the same |
| JP6429388B2 (en) * | 2015-03-19 | 2018-11-28 | 株式会社ディスコ | Manufacturing method of laminated device |
| CN116199432A (en) * | 2015-05-28 | 2023-06-02 | Agc株式会社 | Glass substrate and laminated substrate |
| WO2017006801A1 (en) | 2015-07-03 | 2017-01-12 | 旭硝子株式会社 | Carrier substrate, laminate, and method for manufacturing electronic device |
| CN106865982B (en) * | 2017-03-03 | 2019-05-24 | 四川旭虹光电科技有限公司 | Glass for capacitive touch system protection |
| CN110892514B (en) * | 2017-07-19 | 2023-07-28 | 三菱电机株式会社 | Method for manufacturing semiconductor device and semiconductor device |
| JP7115850B2 (en) * | 2017-12-28 | 2022-08-09 | 株式会社ディスコ | Workpiece processing method and processing apparatus |
| CN108874225B (en) * | 2018-06-27 | 2021-07-30 | 信利光电股份有限公司 | Manufacturing method of ultrathin touch screen functional sheet |
| US20200041828A1 (en) * | 2018-08-01 | 2020-02-06 | Sharp Kabushiki Kaisha | Method of removing panel from suction surface, method of producing display panel, and panel catcher |
| CN109798843B (en) * | 2019-03-15 | 2020-11-13 | 本钢板材股份有限公司 | A method for determining the influencing factors of steel plate surface waviness in cold rolling process |
| JPWO2021251246A1 (en) * | 2020-06-10 | 2021-12-16 | ||
| CN112297586B (en) * | 2020-10-14 | 2023-07-28 | 河北光兴半导体技术有限公司 | Separation method of laminated glass module for display panel |
| CN114904636B (en) * | 2022-04-15 | 2023-09-05 | 江苏日御光伏新材料科技有限公司 | A method of applying an organic protective film layer to glass powder |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011016705A (en) * | 2009-07-10 | 2011-01-27 | Nippon Electric Glass Co Ltd | Method of and apparatus for producing filmy glass |
| TW201132503A (en) * | 2010-01-25 | 2011-10-01 | Asahi Glass Co Ltd | Method for manufacturing laminate, and laminate |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3888223B2 (en) * | 2002-05-13 | 2007-02-28 | ソニー株式会社 | Manufacturing method of liquid crystal display element |
| JP2005060215A (en) * | 2003-07-29 | 2005-03-10 | Nippon Electric Glass Co Ltd | Glass substrate for display, and its manufacturing method |
| JP2008023625A (en) * | 2006-07-19 | 2008-02-07 | Nitta Haas Inc | Workpiece retaining material |
| JP5436959B2 (en) * | 2009-07-14 | 2014-03-05 | ニッタ・ハース株式会社 | Workpiece holding material manufacturing method |
-
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- 2012-01-18 JP JP2012007927A patent/JP5887946B2/en active Active
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- 2013-01-15 TW TW102101529A patent/TWI580566B/en active
- 2013-01-17 CN CN201310018581.7A patent/CN103213371B/en active Active
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011016705A (en) * | 2009-07-10 | 2011-01-27 | Nippon Electric Glass Co Ltd | Method of and apparatus for producing filmy glass |
| TW201132503A (en) * | 2010-01-25 | 2011-10-01 | Asahi Glass Co Ltd | Method for manufacturing laminate, and laminate |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20130085018A (en) | 2013-07-26 |
| JP5887946B2 (en) | 2016-03-16 |
| JP2013149713A (en) | 2013-08-01 |
| TW201338973A (en) | 2013-10-01 |
| CN103213371A (en) | 2013-07-24 |
| CN103213371B (en) | 2016-09-28 |
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